KR20220052286A - Substrate processing apparatus - Google Patents

Abstract

In accordance with an objective of the present invention, an exhaust property suppresses a bias. A chamber has a side wall and a base part, and has at least one gas supply port, and a plurality of exhaust ports. In the chamber, some or all of the plurality of exhaust ports are formed in the base part of the chamber. A substrate support part is placed in the chamber. A ring-shaped baffle plate is placed in the vicinity of the substrate support part so as to cover the plurality of exhaust ports when seen from above, and a gap is formed between the ring-shaped baffle plate and the substrate support part. A piping unit includes a grouped piping part, a plurality of first pipes, and a second pipe. The grouped piping part has a side wall. The grouped piping part has a plurality of first openings and a second opening placed above the plurality of first openings, on the side wall. The plurality of first pipes are individually extended from the plurality of first openings to the plurality of exhaust ports. The second pipe is extended from the second opening to a vacuum pump.

Description

Substrate processing equipment {SUBSTRATE PROCESSING APPARATUS}

The present disclosure relates to a substrate processing apparatus.

Patent Document 1 discloses a substrate processing apparatus having a configuration in which an exhaust port is formed in one location near an edge of a bottom surface of a chamber in which a stage for arranging a substrate is provided, and the inside of the chamber is depressurized by exhausting from the exhaust port.

International Publication No. 2013/175897

The present disclosure provides a technique for suppressing the deflection of exhaust characteristics.

A substrate processing apparatus according to an aspect of the present disclosure includes a chamber, a substrate support, an annular baffle plate, a vacuum pump, and a piping unit. The chamber has side walls and a bottom, and has at least one gas supply port and a plurality of exhaust ports. In the chamber, some or all of the plurality of exhaust ports are formed at the bottom of the chamber. A substrate support is disposed within the chamber. The annular baffle plate is disposed around the substrate support to cover the plurality of exhaust ports when viewed from above, and a gap is formed between the annular baffle plate and the substrate support. The piping unit includes a collective piping portion, a plurality of first piping, and a second piping. The assembly piping part has a side wall. The assembly piping part has a some 1st opening in a side wall, and a 2nd opening arrange|positioned above the some 1st opening. The plurality of first pipes extend from the plurality of first openings to the plurality of exhaust ports, respectively. The second pipe extends from the second opening to the vacuum pump.

According to the present disclosure, it is possible to suppress the deflection of the exhaust characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows an example of the schematic structure of the substrate processing apparatus which concerns on embodiment.
2 is a diagram schematically illustrating an example of the configuration of an exhaust unit according to an embodiment.
3 is a perspective view showing an example of the configuration of an exhaust unit according to the embodiment.
4 is a diagram schematically showing the loading of a substrate into the substrate processing apparatus according to the embodiment.
5 is a diagram illustrating exhaust characteristics of the substrate processing apparatus according to the embodiment.
6 is a diagram schematically showing the configuration of a substrate processing apparatus of a comparative example.
7 is a diagram illustrating exhaust characteristics of a substrate processing apparatus of a comparative example.
8 is a diagram illustrating another example of a schematic configuration of a substrate processing apparatus according to an embodiment.
9 is a diagram schematically showing an example of the arrangement of the exhaust port of the bottom wall portion of the chamber according to the embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of the substrate processing apparatus disclosed by this application with reference to drawings is described in detail. In addition, the disclosed substrate processing apparatus is not limited by this embodiment.

By the way, the substrate processing apparatus which pressure-reduced the inside of the chamber in which the board|substrate was arrange|positioned and performs a board|substrate process is known. In the substrate processing apparatus, the stage for arranging the substrate is provided in the center of the chamber, and the exhaust port is formed in one location near the edge of the bottom surface of the chamber in consideration of space limitation and maintainability in many cases. In such a substrate processing apparatus, when the pressure in the chamber is decompressed by exhausting from one exhaust port, the exhaust characteristics are biased, and the substrate processing with respect to the substrate is also biased.

Therefore, a technique for suppressing the deflection of the exhaust characteristics is expected.

[Embodiment]

[Configuration of film forming apparatus]

Next, an embodiment is described. First, the substrate processing apparatus 100 according to the embodiment will be described. The substrate processing apparatus 100 performs substrate processing on a substrate. In the embodiment, an example will be described in which the substrate processing apparatus 100 is a plasma processing apparatus, and plasma processing such as ashing processing is performed on a substrate as a substrate processing. 1 is a diagram illustrating an example of a schematic configuration of a substrate processing apparatus 100 according to an embodiment. The substrate processing apparatus 100 performs plasma processing, such as an ashing process, which ashes and removes the photoresist film on the to-be-etched film formed on the board|substrate W, such as a semiconductor wafer.

The substrate processing apparatus 100 includes a chamber 110 hermetically configured. The chamber 110 has a cylindrical shape and is made of, for example, a metal such as aluminum or nickel with an anodized film formed on the surface thereof. The upper portion of the chamber 110 is hermetically closed by a cover body 107 having a substantially disk shape made of an insulating material such as quartz or ceramics.

The interior of the chamber 110 is divided into a processing chamber 102 and a plasma generation chamber 104 by a partition member 150 . A plurality of through holes 150a are formed in the partition member 150 . The plasma generation chamber 104 is provided above the processing chamber 102 via the partition member 150 . The plasma generating chamber 104 generates plasma from the gas by exciting the gas by an inductively coupled plasma (ICP) method. The processing chamber 102 communicates with the plasma generation chamber 104 via a plurality of through-holes 150a. In the processing chamber 102 , plasma processing such as ashing processing is performed on the substrate W by plasma supplied through the plurality of through-holes 150a .

In the chamber 110 , a gas diffusion path 123 is formed at an outer peripheral end of the cover body 107 . The gas diffusion path 123 is formed in a ring shape along the circumferential direction of the inner periphery of the chamber 110 . One end of the gas flow path 122 is connected to the gas diffusion path 123 . The gas flow path 122 is formed in the sidewall of the chamber 110 . A gas pipe 121 is connected to the other end of the gas flow path 122 . The gas pipe 121 is connected to the gas supply unit 120 .

The gas supply unit 120 has gas supply lines respectively connected to gas supply sources of various gases used for substrate processing. Each gas supply line is appropriately branched in accordance with the substrate processing process, and a control device for controlling the flow rate of gas, such as a valve such as an on/off valve, and a flow controller such as a mass flow controller, is provided. The gas supply unit 120 supplies various gases used for substrate processing. In this embodiment, for example, although a mixed gas of hydrogen (H ₂ ) gas and argon (Ar) gas is supplied from the gas supply unit 120 , the description is given, but the type of gas is not limited thereto. The gas supplied from the gas supply unit 120 passes through the gas pipe 121 , the gas flow path 122 , and the gas diffusion path 123 , and enters the plasma generating chamber 104 from the vicinity of the outer peripheral end of the cover body 107 . introduced into space.

A coil 119 as an antenna member is wound on the upper portion of the chamber 110 . A high frequency power supply 118 is connected to the coil 119 . The high frequency power supply 118 outputs electric power with a frequency of 300 kHz to 60 MHz and supplies it to the coil 119 . Thereby, an induction electromagnetic field is formed in the plasma generation chamber 104 . In the plasma generation chamber 104 , the introduced gas is excited by an induction electromagnetic field to generate plasma.

The chamber 110 is provided with a stage 106 on which the substrate W is disposed. In the substrate processing apparatus 100 according to the present embodiment, the stage 106 is provided near the center in the processing chamber 102 . The stage 106 is supported by a support member 108 provided at the bottom of the processing chamber 102 . The stage 106 is formed of, for example, anodized aluminum. In the stage 106 , a heater 105 for heating the substrate W is embedded therein. The heater 105 heats the substrate W to a predetermined temperature (for example, 300° C.) by being supplied with electricity from the heater power supply 138 . The heater power supply 138 may control the temperature of the heater 105 to a temperature such that the target film to be etched on the substrate W does not receive significant damage, for example, in a range of about 250°C to 400°C.

In the sidewall of the processing chamber 102 , an open carry-in/out port 132 is formed in order to carry the substrate W in and out. The carry-out port 132 is opened and closed by the gate valve 130 . Carrying-out of the board|substrate W is performed by conveyance mechanisms, such as the conveyance arm 170 (refer FIG. 4), for example. The carrying-out port 132 is formed slightly larger than the cross-sectional shape of the carrying arm 170 and the board|substrate W so that the carrying arm 170 and the board|substrate W may pass. For example, the carrying-out port 132 is formed so that the height in the vertical direction is larger than the thickness of the conveyance arm 170 and the board|substrate W by a predetermined allowable amount. In addition, the carrying-out port 132 has a lower surface 132a of the lower side of the carrying-out port 132 so as not to interfere with the transfer arm 170 when carrying the substrate W in and out of the stage 106 . It is formed lower than the upper surface.

A liner 134 for protecting the inner wall of the processing chamber 102 is provided inside the processing chamber 102 . The liner 134 is made of, for example, aluminum. The liner 134 is formed to cover the inner surface of the processing chamber 102 . In addition, as for the liner 134 , the upper end surface 134a serving as the inner surface side of the lower surface 132a of the carry-out port 132 extends above the lower surface 132a, and the extended upper end surface 134a is the stage. It is formed at the same height as the upper surface of (106).

In the chamber 110 , a plurality of exhaust ports 136 are formed to surround the periphery of the stage 106 . In the present embodiment, a plurality of exhaust ports 136 are formed on the bottom wall of the chamber 110 . Each exhaust port 136 is connected to the exhaust unit 140 . The exhaust unit 140 depressurizes the inside of the chamber 110 by exhausting it from the plurality of exhaust ports 136 . A detailed configuration of the exhaust unit 140 will be described later. The substrate processing apparatus 100 can reduce the pressure in the processing chamber 102 and the plasma generation chamber 104 by the exhaust unit 140 to a predetermined degree of vacuum at which plasma processing is performed.

The liner 134 is provided with a rectifying plate 135 protruding toward the inner support member 108 on the lower side of the stage 106 . The baffle plate 135 is provided to protrude inward from the liner 134 to the extent of covering the upper part of each exhaust port 136 . The baffle plate 135 is provided on the entire circumference of the inner periphery of the liner 134 . The baffle plate 135 is formed in a flat annular shape, and is disposed at intervals from the lower surface of the stage 106 , the peripheral surface of the support member 108 , and the bottom surface of the chamber 110 , respectively. The baffle plate 135 is fixed to the side wall side of the chamber 110, and is formed so that it may extend to the stage 106 side from the said side wall. The rectifying plate 135 is a non-perforated plate having no holes in the annular plate portion. In the present embodiment, the baffle plate 135 corresponds to the annular baffle plate and the annular non-porous baffle plate of the present disclosure. Here, the distance between the lower surface of the stage 106 and the upper surface of the rectifying plate 135 is D1. A distance between the lower surface of the rectifying plate 135 and the lower surface of the chamber 110 is D2. Let the length in the radial direction of the annular plate part of the baffle plate 135 be D3. The distance from the inner circumferential surface of the baffle plate 135 to the side surface of the support member 108 is D4. Let the thickness of the rectifying plate 135 be D5. For example, the distance D1 and the distance D2 are set as the distance D1 : the distance D2 = 1 : 3 to 4. In addition, the thickness D5 and the distance D1 are D5>D1. In addition, the length D3 and the distance D4 are D3>D4.

A plurality of through-holes 150a are formed in the barrier rib member 150 that blocks between the processing chamber 102 and the plasma generation chamber 104 . For example, in the partition member 150, a plurality of through-holes 150a are formed in a concentric shape sequentially from the inner circumferential side. The barrier rib member 150 allows radicals in the plasma generated in the plasma generation chamber 104 to pass through the plurality of through holes 150a into the processing chamber 102 . That is, when gas is excited and plasma is generated in the plasma generating chamber 104, radicals, ions, ultraviolet light, and the like are generated. The barrier rib member 150 is made of quartz or the like, and blocks ions and ultraviolet light of plasma generated in the plasma generation chamber 104 , and allows only radicals to pass through the processing chamber 102 .

A ring-shaped member 152 is provided on the sidewall of the plasma generating chamber 104 portion of the chamber 110 so as to cover the sidewall. The ring-shaped member 152 is made of, for example, quartz. The upper part of the ring-shaped member 152 is formed roundly so that an inner diameter may become small gradually toward the inside. The inner wall of the ring-shaped member 152 is close to the through-hole 150a to such an extent that it does not block the through-hole 150a of the outermost periphery of the partition member 150 .

Next, the configuration of the exhaust unit 140 according to the embodiment will be described. 2 is a diagram schematically showing an example of the configuration of the exhaust unit 140 according to the embodiment. 3 is a perspective view showing an example of the configuration of the exhaust unit 140 according to the embodiment.

A plurality of exhaust ports 136 are formed on the bottom wall of the chamber 110 so as to surround the periphery of the stage 106 . The number of exhaust ports 136 should just be two or more, and it is preferable to provide three or more. In FIG. 2 , since it is schematically simplified, two exhaust ports 136 are shown. However, in the substrate processing apparatus 100 according to the embodiment, the exhaust ports surround the periphery of the stage 106 on the bottom wall of the chamber 110 . (136) is provided in three places. The plurality of exhaust ports 136 are equally disposed around the stage 106 . For example, in this embodiment, the exhaust port 136 is arrange|positioned at 3 places with the space|interval of an angle of 120 degrees with respect to the center of the stage 106. As shown in FIG.

The exhaust unit 140 is connected to a plurality of exhaust ports 136 in a manifold structure, respectively. For example, the exhaust unit 140 includes a plurality of first pipes 141 , an assembly unit 142 , and a second pipe 143 . Each of the plurality of first pipes 141 has one end connected to the exhaust port 136 . The assembly portion 142 has a cylindrical shape, and a cavity is formed therein. As for the assembly part 142, the other end of the some 1st piping 141 is connected to the lower side of a side surface. The plurality of first pipes 141 communicate with the cavity of the assembly portion 142 . The second pipe 143 is connected to the side surface of the assembly portion 142 at a position higher than a connection position where the other ends of the plurality of first pipes 141 are connected to the assembly portion 142 . In the second pipe 143 , the lower end of the connection position with the assembly portion 142 is at a position greater than or equal to the upper end of the connection position where the other ends of the plurality of first pipes 141 are connected to the assembly portion 142 . The second pipe 143 communicates with the cavity of the assembly portion 142 . A pressure control valve 143a such as an Auto Pressure Controller (APC) valve is provided in the second pipe 143 . The other end of the second pipe 143 is connected to, for example, an exhaust system such as a vacuum pump and an exhaust system such as an exhaust pipe of a factory. In the example of FIG. 2 , a vacuum pump 145 is connected to the other end of the second pipe 143 as an exhaust system. For example, as shown in FIG. 3 , the assembly portion 142 has a sidewall, a plurality of first openings 142a and a second opening 142b disposed above the plurality of first openings 142a. have The plurality of first pipes 141 are respectively connected to the first openings 142a and extend from the plurality of first openings 142a to the plurality of exhaust ports 136 , respectively. The second pipe 143 is connected to the second opening 142b and extends from the second opening 142b to the vacuum pump 145 .

The exhaust unit 140 exhausts the interior of the chamber 110 through the assembly unit 142 and the plurality of first pipes 141 by being exhausted from the exhaust system through the second pipe 143 . In addition, the exhaust unit 140 controls the pressure in the chamber 110 by adjusting the exhaust pressure by the pressure control valve 143a provided in the second pipe 143 .

[Flow of substrate processing]

Next, the flow in which the substrate processing apparatus 100 which concerns on embodiment performs plasma processing as a substrate processing is demonstrated. When plasma processing is performed on the substrate W, the gate valve 130 is opened. The transfer mechanism such as the transfer arm 170 carries the substrate W into the processing chamber 102 from the carry-out port 132 and arranges it on the stage 106 . 4 is a diagram schematically showing the loading of the substrate W into the substrate processing apparatus 100 according to the embodiment.

Here, the carrying out port 132 is formed slightly larger than the cross-sectional shapes of the carrying arm 170 and the board|substrate W so that the carrying arm 170 and the board|substrate W may pass. In addition, the lower surface 132a of the carrying-out port 132 is formed lower than the upper surface of the stage 106 so as not to interfere with the carrying arm 170 . Accordingly, even if the transport arm 170 has a configuration in which the housing protrudes downward only by the front arm, such as a multi-joint arm that expands and contracts by horizontally rotating a plurality of arms, when loading the substrate W It is possible to suppress the interference of the carrying inlet 132 and the carrying arm 170 to the.

When the loading of the substrate W is completed, the gate valve 130 is closed. The exhaust unit 140 exhausts the interior of the processing chamber 102 and the interior of the plasma generation chamber 104 through each exhaust port 136 to set a predetermined reduced pressure state. In addition, the heater power supply 138 supplies a predetermined electric power to the heater 105 so that the substrate W becomes at a predetermined temperature (for example, 300° C.).

Next, the gas supply unit 120 supplies hydrogen gas and argon gas into the plasma generation chamber 104 via the gas pipe 121 , the gas flow path 122 , and the gas diffusion path 123 . In addition, the high frequency power supply 118 supplies a high frequency power of, for example, 4000 W to the coil 119 to form an induction electromagnetic field inside the plasma generation chamber 104 . Thereby, in the plasma generation chamber 104, plasma is generated from hydrogen gas and argon gas. Among the generated plasma, ultraviolet light and ions are shielded by the barrier rib member 150, and radicals pass therethrough. As a result, the surface of the substrate W in the processing chamber 102 is subjected to a desired treatment such as an ashing treatment of the photoresist film on the substrate W by radicals without receiving damage from ultraviolet light and hydrogen ions. can run

Here, as shown in FIGS. 1 to 3 , in the substrate processing apparatus 100 according to the embodiment, the exhaust ports 136 are equally disposed at three locations so as to surround the periphery of the stage 106 , and each exhaust port 136 is provided. ) to exhaust the inside of the chamber 110 . Thereby, since the flow of exhaust gas to each exhaust port 136 is dispersed in the circumferential direction of the stage 106, the deviation of exhaust characteristic can be suppressed. Further, in the substrate processing apparatus 100 according to the embodiment, the baffle plate 135 is provided around the stage 106 so as to cover each exhaust port 136 at a position lower than the stage 106 . Thereby, the exhaust flow to each exhaust port 136 passes between the baffle plate 135 and the lower surface of the stage 106 and the circumferential surface of the support member 108 in the circumferential direction of the stage 106 . It diffuses and becomes uniform, and the deviation of exhaust characteristic can be suppressed more.

In addition, in the substrate processing apparatus 100 according to the embodiment, as shown in FIGS. 1 and 2 , the upper end surface 134a of the liner 134 is extended upward from the lower surface 132a of the carrying inlet 132 . and the upper surface 134a is formed at the same height as the upper surface of the stage 106 . In addition, the upper end surface 134a of the liner 134 may be formed higher than the upper surface of the stage 106 . In this way, by making the bottom surface of the opening of the carrying-out port 132 the same as the top surface of the stage 106 only at the innermost side, the conductance for each exhaust port 136 at the bottom is made uniform in the circumferential direction of the stage 106. Thus, the gas uniformity is improved. In addition, only the liner 134 extends the upper end surface 134a upward, so that only the inside of the carry-out port 132 is narrowed. Thereby, the carrying-out port 132 can ensure the space into which the carrying arm 170 enters.

5 is a diagram illustrating exhaust characteristics of the substrate processing apparatus 100 according to the embodiment. 5 is a simulation result of exhaust characteristics in the case of a configuration of the substrate processing apparatus 100 according to the embodiment. 5 shows the distribution of exhaust characteristics in the plane of the stage 106 . Since the substrate processing apparatus 100 according to the embodiment can suppress the deflection of the exhaust characteristics, it is possible to equalize the exhaust characteristics within the plane of the stage 106 as shown in FIG. 5 .

In addition, the exhaust unit 140 according to the embodiment connects each first pipe 141 to which the exhaust port 136 is connected to the assembly unit 142 , and is higher than the connection position of each first pipe 141 . The second pipe 143 is connected to the assembly portion 142 at the position. As a result, even if, for example, a foreign material such as a screw falls from the exhaust port 136 to the first pipe 141 and the foreign material reaches the cavity of the assembly portion 142 , the foreign material enters the second pipe 143 . can be prevented from becoming

Here, as a comparative example, the conventional substrate processing apparatus is demonstrated. Conventionally, in a substrate processing apparatus, a stage for arranging a substrate is provided in the center of a chamber, and an exhaust port is formed in one location near the edge of the bottom surface of the chamber in consideration of space limitation and maintainability in many cases. 6 is a diagram schematically showing the configuration of a substrate processing apparatus of a comparative example. In FIG. 6, the same code|symbol is attached|subjected to the part of the structure similar to the substrate processing apparatus 100 which concerns on embodiment. In the substrate processing apparatus of the comparative example, the exhaust port 136 is provided at one location of the bottom wall of the chamber 110 . In this case, the exhaust characteristic is biased toward the side where the exhaust port 136 is provided in the chamber 110 . 7 is a diagram illustrating exhaust characteristics of a substrate processing apparatus of a comparative example. 7 is a simulation result of exhaust characteristics when the exhaust port 136 is provided at one location on the bottom wall of the chamber 110 . 7 shows the distribution of exhaust characteristics in the plane of the stage 106 . As shown in FIG. 7 , in the substrate processing apparatus of the comparative example, there is a bias in the distribution of exhaust characteristics within the plane of the stage 106 . If there is a bias in the exhaust characteristic as described above, the gas is deflected in the plane of the stage 106 , and the processing characteristic in the plane of the substrate W is also biased even for substrate processing with respect to the substrate W .

Further, in the conventional substrate processing apparatus, as shown in FIG. 6 , since the exhaust port 136 is provided on the bottom wall of the chamber 110 , foreign substances such as screws are connected from the exhaust port 136 to the exhaust port 136 . It may be mixed into the pipe 137 . The pipe 137 is provided with a pressure control valve 137a such as an APC valve. In the pressure control valve 137a, if foreign matter is mixed, problems such as the inability to perform exhaust control occurs. For this reason, in the conventional substrate processing apparatus, it is necessary to provide a net in the exhaust port 136 for preventing foreign matter from entering. However, the reaction product adheres to the net for preventing contamination of foreign matter and is gradually deposited, and the exhaust characteristic deteriorates.

On the other hand, since the substrate processing apparatus 100 according to the embodiment can suppress the deflection of the exhaust characteristics, it is possible to suppress the deflection of the gas in the plane of the stage 106 , so that it is possible to reduce the deflection of the gas to the substrate W. Also, it is possible to suppress the deflection of the processing characteristics in the plane of the substrate W.

Further, in the exhaust unit 140 according to the embodiment, the first pipe 141 , the assembly unit 142 , and the second pipe 143 are not provided with a mesh for preventing foreign matter from entering the exhaust system, and foreign matter is prevented from entering the exhaust system. can be prevented As described above, in the exhaust unit 140 according to the embodiment, it is not necessary to provide a mesh for preventing contamination of foreign matter, so that a decrease in exhaust characteristics can be suppressed.

In addition, in the said embodiment, the case where the some exhaust port 136 was formed in the bottom of the chamber 110 was demonstrated. However, the present invention is not limited thereto. A part of the plurality of exhaust ports 136 may be formed at the bottom of the chamber 110 , and the remainder of the plurality of exhaust ports 136 may be formed on a sidewall of the chamber 110 . In addition, all of the plurality of exhaust ports 136 may be formed on the sidewall of the chamber 110 . In addition, some or all of the plurality of exhaust ports 136 may be formed from the bottom surface of the chamber 110 to the side wall. 8 is a diagram illustrating another example of a schematic configuration of the substrate processing apparatus 100 according to the embodiment. 9 is a diagram schematically showing an example of the arrangement of the exhaust port 136 of the bottom wall portion of the chamber 110 according to the embodiment. Since the substrate processing apparatus 100 shown in FIGS. 8 and 9 has a partially identical configuration to the substrate processing apparatus 100 shown in FIG. 1 , the same reference numerals are assigned to the same parts and description is omitted, and descriptions are mainly given for other parts. Explain. 8 and 9 show a case in which a plurality of exhaust ports 136 are formed at corners between the liner 134 and the bottom of the chamber.

As shown in FIG. 8 , in the substrate processing apparatus 100 , an exhaust port 136 is formed under the liner 134 at a corner portion between the bottom wall of the chamber 110 and the liner 134 . A plurality of exhaust ports 136 are formed to surround the periphery of the stage 106 . A plurality of exhaust ports 136 are formed on the side surface of the liner 134 so as to surround the periphery of the stage 106 . As shown in FIG. 9 , the exhaust port 136 is formed so that the outside of the opening is located under the liner 134 . That is, the exhaust port 136 is in a state where the outer side entered under the liner 134 . The inner surface of the liner 134 has a concave lower side so that the portion where the exhaust port 136 is positioned conforms to the shape of the exhaust port 136 . Thereby, the exhaust port 136 can take in air even from the outside that has entered under the liner 134 . The upper side of the first pipe 141 of the exhaust unit 140 is connected to the exhaust port 136 , respectively. The exhaust unit 140 exhausts the interior of the chamber 110 through the assembly unit 142 and the plurality of first pipes 141 by being exhausted from the exhaust system through the second pipe 143 . In addition, the exhaust unit 140 controls the pressure in the chamber 110 by adjusting the exhaust pressure by the pressure control valve 143a provided in the second pipe 143 . The substrate processing apparatus 100 according to the embodiment may have a configuration in which the inside of the chamber 110 is exhausted by providing the plurality of exhaust ports 136 on the side surfaces of the liner 134 in this way.

[effect]

As described above, the substrate processing apparatus 100 according to the embodiment includes a chamber 110 , a stage 106 (a substrate support portion), a rectifying plate 135 (annular baffle plate), a vacuum pump 145 , An exhaust unit 140 (a piping unit) is provided. The chamber 110 has a side wall and a bottom, and has at least one gas supply port (gas diffusion path 123 ) and a plurality of exhaust ports 136 . In the chamber 110 , some or all of the plurality of exhaust ports 136 are formed at the bottom of the chamber 110 . The stage 106 is arranged in the chamber 110 . The baffle plate 135 is arranged around the stage 106 so as to cover the plurality of exhaust ports 136 when viewed from above, and a gap is formed between the baffle plate 135 and the stage 106 . The exhaust unit 140 includes an assembly unit 142 (collection pipe unit), a plurality of first pipes 141 , and a second pipe 143 . The assembly part 142 has a side wall. The assembly part 142 has, in a sidewall, the some 1st opening 142a and the 2nd opening 142b arrange|positioned above the some 1st opening 142a. The plurality of first pipes 141 extend from the plurality of first openings 142a to the plurality of exhaust ports 136 , respectively. The second pipe 143 extends from the second opening 142b to the vacuum pump 145 . Thereby, in the substrate processing apparatus 100, the exhaust characteristic can suppress the deflection.

In addition, the chamber 110 has three or more exhaust ports 136 . Thereby, since the substrate processing apparatus 100 can disperse the flow of exhaust gas to each exhaust port 136, the deviation of exhaust characteristics can be suppressed.

In addition, the plurality of exhaust ports 136 are arranged at equal intervals in the circumferential direction. Accordingly, since the substrate processing apparatus 100 can disperse the flow of exhaust gas to each exhaust port 136 in the circumferential direction of the stage 106 , it is possible to suppress deflection of exhaust characteristics.

In addition, the baffle plate 135 extends from the sidewall of the chamber 110 toward the stage 106 . Accordingly, in the substrate processing apparatus 100 , since the flow of exhaust gas to each exhaust port 136 is diffused in the circumferential direction by the baffle plate 135 , it is possible to suppress the deviation of exhaust characteristics.

Further, the stage 106 has a substrate supporting plate (plate portion of the stage 106) having a first diameter, a second diameter smaller than the first diameter, and extending downward from the lower surface of the substrate supporting plate (supporting). member 108) includes a leg member. The baffle plate 135 has an inner diameter smaller than the first diameter. Accordingly, in the substrate processing apparatus 100 , since the flow of exhaust gas to each exhaust port 136 is bent and diffused, the deviation of exhaust characteristics can be further suppressed.

Moreover, the baffle plate 135 has a larger width dimension than the dimension of a clearance gap. Accordingly, the substrate processing apparatus 100 can diffuse the exhaust flow to each exhaust port 136 in the circumferential direction by the baffle plate 135 , so that the deviation of exhaust characteristics can be further suppressed.

As mentioned above, although embodiment was demonstrated, it should be thought that embodiment disclosed this time is not restrictive by an illustration in all points. Indeed, the above-described embodiment may be implemented in various forms. In addition, the above-mentioned embodiment may abbreviate|omit, substitute, and change in various forms, without deviating from a claim and the meaning.

For example, in the above embodiment, the case where the substrate treatment is an ashing treatment has been described as an example. However, the present invention is not limited thereto. The substrate processing may be any substrate processing as long as it is a substrate processing performed by reducing the pressure in the chamber 110 . For example, the substrate processing may be a plasma processing such as plasma etching, or a processing that does not use plasma. Note that, for example, the substrate treatment may be an etching treatment or a film forming treatment.

For example, in the above embodiment, the case in which the plurality of exhaust ports 136 are formed on the bottom wall of the chamber 110 has been described as an example. However, the present invention is not limited thereto. The plurality of exhaust ports 136 may be formed on the side wall of the chamber 110 at a position lower than the upper surface of the stage 106 .

In addition, in the above embodiment, the case where the substrate processing apparatus 100 is a so-called inductively-coupled plasma (ICP) apparatus has been described. However, the present invention is not limited thereto. The substrate processing apparatus 100 may be any apparatus as long as it performs substrate processing by depressurizing the inside of the chamber 110 . For example, the substrate processing apparatus 100 may be an apparatus using a capacitively coupled plasma (CCP), an electron-cyclotron-resonance plasma (ECR), a helicon wave excited plasma (HWP), or a surface wave plasma (SWP). .

In addition, although the said embodiment demonstrated the case where the board|substrate W was made into a semiconductor wafer as an example, it is not limited to this. The substrate W may be any substrate.

In addition, it should be thought that embodiment disclosed this time is not restrictive by an illustration in all points. Indeed, the above-described embodiment may be implemented in various forms. In addition, said embodiment may abbreviate|omit, substitute, and change in various forms, without deviating from the attached claim and the meaning.

Claims (11)

A chamber having sidewalls and a bottom, the chamber having at least one gas supply port and a plurality of exhaust ports, wherein some or all of the plurality of exhaust ports are formed in the bottom of the chamber;
a substrate support disposed in the chamber;
an annular baffle plate disposed around the substrate support to cover the plurality of exhaust ports when viewed from above, wherein a gap is formed between the annular baffle plate and the substrate support;
a vacuum pump,
A piping unit is provided,
The piping unit is
an assembly piping portion having a sidewall, the sidewall including a plurality of first openings and a second opening disposed above the plurality of first openings;
a plurality of first pipes respectively extending from the plurality of first openings to the plurality of exhaust ports;
a second tubing extending from the second opening to the vacuum pump;
substrate processing equipment. The method of claim 1,
The plurality of exhaust ports has three or more exhaust ports,
substrate processing equipment. 3. The method according to claim 1 or 2,
The plurality of exhaust ports are arranged at equal intervals in the circumferential direction,
substrate processing equipment. 4. The method according to any one of claims 1 to 3,
wherein the annular baffle plate extends from a sidewall of the chamber toward the substrate support.
substrate processing equipment. 5. The method according to any one of claims 1 to 4,
The substrate support portion,
a substrate support plate having a first diameter;
a leg member having a second diameter smaller than the first diameter and extending downwardly from a lower surface of the substrate support plate;
substrate processing equipment. 6. The method of claim 5,
The annular baffle plate has an inner diameter smaller than the first diameter,
substrate processing equipment. 7. The method according to any one of claims 1 to 6,
wherein the annular baffle plate has a width dimension greater than a dimension of the gap;
substrate processing equipment. 8. The method according to any one of claims 1 to 7,
A portion of the plurality of exhaust ports is formed on a sidewall of the chamber,
substrate processing equipment. 9. The method according to any one of claims 1 to 8,
The annular baffle plate is a non-porous plate,
substrate processing equipment. A chamber having a side wall and a bottom, the chamber having at least one gas supply port and a plurality of exhaust ports, the plurality of exhaust ports being formed in a side wall of the chamber;
a substrate support disposed in the chamber;
an annular non-porous baffle plate extending from the sidewall of the chamber toward the substrate support part above the plurality of exhaust ports, wherein a gap is formed between the annular non-porous baffle plate and the substrate support part;
a vacuum pump,
A piping unit is provided,
The piping unit is
an assembly piping portion having a sidewall, the sidewall including a plurality of first openings and a second opening disposed above the plurality of first openings;
a plurality of first pipes respectively extending from the plurality of first openings to the plurality of exhaust ports;
a second tubing extending from the second opening to the vacuum pump;
substrate processing equipment. a chamber having at least one gas supply port and a plurality of exhaust ports;
a substrate support disposed in the chamber;
a vacuum pump,
A piping unit is provided,
The piping unit is
an assembly piping portion having a sidewall, the sidewall including a plurality of first openings and a second opening disposed above the plurality of first openings;
a plurality of first pipes respectively extending from the plurality of first openings to the plurality of exhaust ports;
a second tubing extending from the second opening to the vacuum pump;
substrate processing equipment.

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