KR20220049338A - Apparatus for processing substrate and method for depositing thin film using the same - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a thin film deposition method using the same, and more particularly, to a substrate processing apparatus for processing a substrate by activating a process gas using plasma and a thin film deposition method using the same. A substrate processing apparatus according to an embodiment of the present invention includes: a chamber providing a process space; a gas supply unit for supplying a process gas to the process space; a substrate support disposed facing the gas supply unit and having a seating surface for supporting a substrate provided in the process space; a lower antenna provided below the seating surface and generating a magnetic field to form plasma in the process space; and a first power source for supplying power to the lower antenna. It is possible to deposit high-quality thin films.

Description

Substrate processing apparatus and thin film deposition method using the same

The present invention relates to a substrate processing apparatus and a thin film deposition method using the same, and more particularly, to a substrate processing apparatus for processing a substrate by forming plasma, and a thin film deposition method using the same.

Plasma refers to a state in which gas is separated into charged particles having negative or positive charges due to electrical discharge. Plasma can activate the deposition gas at a relatively low process temperature when a natural chemical reaction is difficult or a high temperature is required due to the nature of the deposition material. is becoming

A substrate processing apparatus using plasma generates a capacitively coupled substrate processing apparatus for generating a capacitively coupled plasma (CCP) according to a plasma forming method, and an inductively coupled plasma (ICP) for generating a plasma. It can be divided into an inductive coupling type substrate processing apparatus.

The capacitive coupling method is a method in which electric power is applied to electrodes disposed opposite to each other to generate plasma by an electric field formed between the electrodes. On the other hand, the inductive coupling method is a method of generating plasma by mutual collision of charged particles induced from the magnetic field when the magnetic field formed from the current flowing through the coil changes with time. The capacitive coupling method has the advantage of generating high-energy charged particles by using a strong electric field, but due to its characteristics, the charged particles collide with the substrate to cause damage to the substrate, and the plasma density is low. On the other hand, in the inductive coupling method, charged particles continuously collide with the process gas to generate a high-density plasma, so research on a thin film deposition apparatus to which it is applied to deposit a high-quality thin film is being actively conducted.

On the other hand, the display device is continuously enlarged in terms of consumer demand and production efficiency. In order to enlarge the display apparatus as described above, it is essential to enlarge the substrate used in the display apparatus. However, as the size of the substrate progresses, the density of plasma is increased, and the demand for securing a uniform plasma in the substrate processing apparatus is also increasing.

KR 10-2019-0036017 A

The present invention provides a substrate processing apparatus capable of depositing a high-quality thin film by generating a high-density plasma and a thin film deposition method using the same.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber providing a process space; a gas supply unit for supplying a process gas to the process space; a substrate support disposed opposite the gas supply unit and having a seating surface for supporting a substrate provided in the process space; a lower antenna provided under the seating surface and configured to generate a magnetic field to form plasma in the process space; and a first power supply for supplying power to the lower antenna.

The lower antenna may be provided to at least partially surround the central axis of the substrate support.

The lower antenna may include a first lower antenna and a second lower antenna provided to be spaced apart from each other at different intervals from the central axis.

Power respectively supplied to the first lower antenna and the second lower antenna may be individually controlled.

A second power source provided in the gas supply unit to supply power to at least one of a showerhead for distributing a process gas and a substrate support may be further included.

a side antenna provided to surround at least a portion of the process space from a side; and a third power source for supplying power to the side antenna.

A cover coupled to a lower surface of the substrate support to provide an internal space for accommodating the lower antenna, the cover may be made of a material different from at least a portion including a seating surface of the substrate support.

At least a portion including the seating surface of the substrate support may be made of a material capable of passing a magnetic field, and the cover may be made of a material capable of shielding the magnetic field.

An insulating member made of an insulating material and filled in the remaining internal space except for the space in which the lower antenna is disposed; may further include.

The cover may have a corrosion protection layer provided on the exposed surface.

a support shaft provided under the substrate support to move the substrate support up and down; and an electrode part connected to the lower antenna and configured to receive power from the first power source via the support shaft, wherein the electrode part is connected to the lower antenna and extends on the support shaft. ; and a terminal part connected to the connection part and extending downwardly from the inside of the support shaft.

A shielding layer made of a material capable of shielding a magnetic field may be provided on a lower surface of the substrate support overlapping at least a portion of the connection part.

The lower antenna may have a flow path for flowing a cooling medium therein.

a fourth power source for supplying power to accessory parts installed on the substrate support; and a filter installed on a power supply line connecting the accessory component and a fourth power source to remove a frequency component of power supplied from the first power source.

In addition, the thin film deposition method according to an embodiment of the present invention includes the steps of seating a substrate on a seating surface of a substrate support provided in a process space within a chamber; generating a magnetic field by supplying power to a lower antenna provided under the seating surface; and depositing a first thin film by forming a first plasma in the process space in an inductively coupled manner from the generated magnetic field.

In the process of generating the magnetic field, power may be supplied to each of the first lower antenna and the second lower antenna provided to be spaced apart from each other at different intervals from the central axis of the substrate support.

In the process of generating the magnetic field, at least one of the intensity and frequency of power supplied to the first lower antenna and the second lower antenna may be individually controlled.

The method may further include a process of generating a magnetic field by supplying power to a side antenna provided to surround at least a portion of the process space.

The method may further include a process of depositing a second thin film by forming a second plasma in the process space using an inductive coupling method and a capacitive coupling method so as to have different characteristics from the first plasma.

In the process of depositing the second thin film, power is further supplied to at least one of the showerhead and the substrate support provided in the gas supply unit in the chamber to distribute the process gas while power is supplied to the lower antenna, The second thin film may be deposited on the first thin film.

According to the substrate processing apparatus and the thin film deposition method using the same according to an embodiment of the present invention, by generating a magnetic field under the seating surface of the substrate support on which the substrate is seated, the magnetic field is generated at a position as close to the substrate as possible in the process space to generate plasma. can be formed Accordingly, the thin film can be effectively deposited by the high-density plasma maintained on the substrate.

In addition, a plurality of lower antennas provided to be spaced apart from each other at different intervals from the central axis of the substrate support are respectively disposed, and power is supplied to each lower antenna by a power source capable of individually controlling at least one of the intensity and frequency of power. By doing so, the density of plasma in the process space can be controlled at the center and the edge, respectively. From this, the density of plasma in the process space can be uniformly controlled, and a uniform thin film can be deposited on a large-area substrate used in a display device by activating the process gas uniformly in the process space.

In addition, by continuously depositing the first thin film and the second thin film on the substrate using the first plasma and the second plasma having different characteristics, a thin film with high density is formed on the substrate while preventing damage to the substrate can do. That is, the first thin film is deposited using a first plasma that suppresses or prevents collision of the charged particles with the substrate by moving the charged particles in a direction parallel to the surface of the substrate, and the charged particles moving in a direction parallel to the surface of the substrate are removed. By accelerating and spirally moving in the direction of the substrate, the density of active species is increased, and the second thin film having a dense structure is deposited, thereby preventing damage to the substrate and forming a thin film with high density.

1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing a state in which a lower antenna is installed under a substrate support according to an embodiment of the present invention.
3 is a view showing a state in which the lower antenna is installed in the AA' direction shown in FIG.
4 is a view for explaining a thin film deposition method according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments of the present invention allow the disclosure of the present invention to be complete, and the scope of the invention to those of ordinary skill in the art It is provided to fully inform the In order to describe the invention in detail, the drawings may be exaggerated, and like reference numerals refer to like elements in the drawings.

1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus according to an embodiment of the present invention includes a chamber 100 providing a process space, a gas supply unit 200 for supplying a process gas to the process space, and the gas supply unit 200 . A substrate support 300 having a seating surface disposed oppositely to support the substrate S provided in the process space, provided under the seating surface, and generating a magnetic field to generate plasma in the process space It includes a lower antenna 500 and a first power source 510 for supplying power to the lower antenna 500 .

The chamber 100 prepares a predetermined process space for depositing a thin film on the substrate S, and keeps it airtight. The chamber 100 includes a body 110 having a predetermined process space including a substantially circular or rectangular flat portion and a sidewall portion extending upward from the flat portion, and is located on the body 110 in an approximately circular or square shape to form the chamber ( 100) may include a cover 120 to keep airtight. However, the chamber 100 is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate S.

In addition, an exhaust port (not shown) may be formed in a predetermined region of the lower surface of the chamber 100 , and an exhaust pipe (not shown) connected to the exhaust port may be provided outside the chamber 100 . Such an exhaust pipe may be connected to an exhaust device (not shown). The exhaust device may vacuum the process space inside the chamber 100 to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less. The exhaust pipe may be installed not only on the lower surface of the chamber 100 but also on the side of the chamber 100 under the substrate support 300 to be described later, and a plurality of exhaust pipes and an exhaust device may be further installed to reduce exhaust time. is of course

The gas supply unit 200 injects a process gas into the process space. The gas supply unit 200 may include a showerhead and distribute the process gas supplied from the gas supply line 210 , and the showerhead may have a plurality of injection holes to inject the process gas into the process space. Since the process gas is distributed through the gas supply unit 200 and injected into the process space, the process gas may be uniformly supplied to the process space. The gas supply line 210 may be connected to the upper central portion of the chamber 100 , and in this case, a large amount of process gas may be injected from the central portion where the gas supply line 210 is disposed, so that the injection hole has a diameter as it moves away from the central portion. It may be provided to be enlarged. However, the present invention is not limited thereto, and the position, injection direction, number, and the like of the injection hole may be appropriately adjusted according to process conditions.

A second power source 220 may be connected to the showerhead, and when power is supplied to the showerhead from the second power source 220, plasma may be generated in the process space by a capacitively coupled plasma (CCP) method. Here, the power supplied from the second power source 220 may include AC power, for example, RF power, and may include DC power in addition to RF power.

The substrate support 300 is disposed opposite to the gas supply unit 200 to support the substrate S provided in the process space. The substrate support 300 may be disposed at an inner lower portion of the chamber 100 to support the substrate S in the process space. The substrate support 300 has a predetermined thickness and may be provided in a shape corresponding to the shape of the substrate S, for example, a circular or rectangular plate shape. In this case, the upper surface of the substrate support 300 forms a seating surface for seating the substrate.

Here, the substrate support 300 may be grounded. As described above, the second power source 220 may be connected to the showerhead, and at this time, the substrate support 300 is grounded to generate a potential difference between the showerhead and the substrate support 300, and in this potential difference Thus, a capacitively coupled plasma may be formed in the process space. However, the second power source 220 is not necessarily connected to the showerhead and the substrate support 300 is not necessarily grounded, the showerhead is grounded, and the second power source 220 is connected to the substrate support 300 , or Of course, the showerhead and the substrate support 300 may be respectively connected to a separate second power source 200 to generate a potential difference.

A support shaft 400 for moving the substrate support 300 up and down may be installed under the substrate support 300 . That is, the support shaft 400 is installed under the substrate support 300 to move the substrate support 300 up and down. The support shaft 400 may be provided to support at least one region of the substrate support 300 , for example, the center of the substrate support 300 from the lower side. When the substrate S is seated on the substrate support 300 , the substrate support 300 may be moved to be close to the gas supply unit 200 .

The lower antenna 500 is provided under the seating surface of the substrate support 300 to generate plasma in the process space. The lower antenna 500 may be disposed in various positions under the seating surface of the substrate support 300 . In the drawings, the structure in which the lower antenna 500 is disposed under the substrate support 300 is exemplarily shown, but unlike this, the lower antenna 500 may have various structures such as being embedded in the substrate support 300 and disposed. of course there is

Here, the lower antenna 500 is provided to at least partially surround the virtual central axis X extending downward from the center of the substrate support 300 , and receives power from the first power source 510 to provide power to the process space. Plasma may be generated by an inductively coupled plasma (ICP) method. For example, one end of the lower antenna 500 may be connected to the first power source 510 and the other end may be grounded. Here, power having a frequency of 400 kHz, 2 MHz, 13.56 MHz, 27.12 MHz, etc. may be supplied from the first power source 510 .

The lower antenna 500 may be provided to completely surround the central axis X in the circumferential direction, or may be provided to partially surround the central axis X in the circumferential direction. Such a lower antenna 500 may be provided in a circular or annular shape, or may be provided in a coil shape wound with a plurality of circuits. In this case, the lower antenna 600 may have a shape of a plane coil wound with a plurality of circuits having a predetermined interval on one plane. In addition, a plurality of lower antennas 500 may be provided to be spaced apart from each other at different intervals from the central axis (X). That is, two lower antennas 500 may be provided as shown in the drawing, or three or more may be provided to be spaced apart from each other at different intervals from the central axis X as the substrate becomes larger.

Accordingly, the lower antenna 500 may include a first lower antenna 502 and a second lower antenna 502 spaced apart from each other at different intervals from the central axis X and provided to surround the central axis X. there is. As such, when the lower antenna 500 includes the first lower antenna 502 and the second lower antenna 504 , the first power source 510 is supplied with the first lower antenna 502 and the second lower antenna 504 . ) can be individually powered. In the drawing, the first power supply 510 includes a 1-1 power supply 512 and a 1-2 power supply 514, and a 1-1 power supply 512 and a 1-2 power supply 514 are the first power supplies. Although the structure for individually supplying power to the lower antenna 502 and the second lower antenna 504 is illustrated as an example, the present invention is not limited thereto, and the first power supply line to which power is supplied from the first power source 510 is branched. It goes without saying that individually controlled power may be supplied to the first lower antenna 502 and the second lower antenna 504 .

In the case of the capacitive coupling method, the plasma is generated by an electric field directly formed between the electrodes disposed opposite to each other, for example, the gas supply unit 200 and the substrate support 300 . The capacitive coupling method has the advantage of generating high-energy charged particles by using a strong electric field, but due to its characteristics, the charged particles move in the vertical direction between the gas supply unit 200 and the substrate support 300, Accordingly, the charged particles collide with the substrate S to cause damage to the substrate, and there is a disadvantage that the plasma density is low.

On the other hand, the inductive coupling method is a method of generating plasma by mutual collision of charged particles induced from the magnetic field when a magnetic field formed from a current flowing through an antenna, for example, a coil changes with time. That is, the inductive coupling method generates a magnetic field in the vertical direction from the current flowing through the antenna, and the charged particles rotate in the horizontal direction with the substrate by the magnetic field generated in the vertical direction to generate plasma by mutual collision. Accordingly, in the inductive coupling method, since the charged particles move in a horizontal direction to the substrate and do not collide with the substrate, damage to the substrate is minimized, and high-density plasma can be generated by continuously collided with the process gas.

However, such an inductive coupling method exhibits effective performance in a semiconductor substrate having a relatively small area, but has a problem in that it is difficult to apply to a large-area substrate used in a display device. That is, as the size of the substrate progresses, when the process gas is introduced, it is difficult to uniformly activate the process gas, and there is a problem in that the degree of activation between the part into which the process gas is introduced and the other part is non-uniform.

In order to solve this problem, conventionally, a method of supplying higher power to a coil surrounding the process space or arranging the coil above the showerhead was used. However, the power that can be supplied to the coil is limited, and when high power is supplied to the coil, the problem of non-uniform activation degree appearing in the process space is further exacerbated. In the process gas is activated, deposition is made in the showerhead, which causes another problem in that the injection hole of the showerhead is clogged. Accordingly, in the embodiment of the present invention, a lower antenna 500 for generating plasma in an inductively coupled manner is installed under the seating surface of the substrate support 300 to generate a magnetic field at a position as close to the substrate S as possible. Accordingly, it is possible to maintain the maximum strength of the magnetic field on the substrate (S), it is possible to generate a high-density plasma on the substrate (S).

In addition, in the embodiment of the present invention, power is individually supplied from the first power source 512 and the second power source 514 to the first lower antenna 502 and the second lower antenna 504, respectively. The density of plasma can be controlled at the center and the edge of the process space, respectively. Accordingly, the density of plasma in the process space can be uniformly controlled, and the process gas can be uniformly activated in the process space.

In addition, the substrate processing apparatus according to an embodiment of the present invention may further include a side antenna 600 provided to surround the process space and a third power source 620 for supplying power to the side antenna 600 . . In this way, by further generating a magnetic field by the side antenna 600 additionally provided to surround the process space from the side in addition to the lower antenna 500, the density of plasma generated at the edge of the process space can be relatively increased. , thereby making it possible to generate a uniform plasma even when the process space is widened by a large-area substrate.

In addition, the substrate processing apparatus according to an embodiment of the present invention is an inductive coupling method by the lower antenna 500 or the lower antenna 500 and the side antenna 600 and a capacitive coupling method by the showerhead and the substrate support 300 . can be used simultaneously to generate plasma in the process space. In this case, the charged particles rotate in a direction horizontal to the substrate by the inductive coupling method, and at the same time, the charged particles move in the vertical direction between the showerhead and the substrate support 300 by the capacitive coupling method. That is, when the inductive coupling method and the capacitive coupling method are used at the same time, the charged particles moving in a circle in a direction parallel to the surface of the substrate S can be accelerated in the direction of the substrate S to cause a spiral motion. Accordingly, both the advantages of the inductive coupling method for generating high-density plasma and the capacitive coupling method for generating high-energy charged particles can be utilized, and a high-quality thin film can be deposited.

Hereinafter, a detailed structure in which the lower antenna is installed under the substrate support according to an embodiment of the present invention will be described in more detail.

2 is a view showing a state in which the lower antenna is installed under the substrate support according to an embodiment of the present invention, and FIG. 3 is a view showing the state in which the lower antenna is installed in the direction A-A' shown in FIG. 2 .

As described above, the lower antenna 500 may be provided to surround the central axis X extending downward from the center of the substrate support 300 . In this case, the lower antenna 500 may be provided to completely surround the central axis X in the circumferential direction, or to partially surround the central axis X in the circumferential direction, corresponding to the shape of the outline of the substrate support 300 . there is. For example, when the substrate support 300 is provided in a rectangular plate shape, the lower antenna 500 may extend from one end to the other end while enclosing the central axis X so as to form a substantially rectangular part with an open portion.

Also, the lower antenna 500 may include a first lower antenna 502 and a second lower antenna 504 spaced apart from the central axis X at different intervals to surround the central axis. That is, as the substrate used in the display device, for example, a large substrate having a length of several meters in a horizontal direction and a vertical direction may be used. Accordingly, the lower antenna 500 for generating a magnetic field in order to deposit a uniform thin film on the central region of the large substrate and the edge region of the substrate is the first lower antenna provided to surround the central axis X at different intervals. 502 and a second lower antenna 504 .

In this case, the first lower antenna 502 is provided in the lower central region of the substrate support 300 , one end of the first lower antenna 502 is connected to the first first power source 512 , and the first lower antenna The other end of 502 may be grounded. In addition, the second lower antenna 504 is provided in the lower edge region of the substrate support 300 , and one end of the second lower antenna 504 is connected to the second first power source 514 , and the second lower antenna ( 504) may be grounded.

Meanwhile, the substrate support 300 moves up and down by the support shaft 400 . Here, the lower antenna 500 may be installed between the substrate support 300 and the bottom surface of the chamber 100 after the substrate support 300 is moved downward to the maximum. However, even when the substrate support 300 is moved upward for deposition, the lower antenna 500 is interlocked with the substrate support 300 to move up and down in order to dispose the lower antenna 500 as close to the substrate S as possible. It may be provided to be movable.

In this way, in order for the lower antenna 500 to move up and down in conjunction with the substrate support 300 , the substrate processing apparatus according to an embodiment of the present invention includes the lower antenna 500 , that is, the first lower antenna 502 and A cover 310 coupled to the lower surface of the substrate support 300 may be further included to provide an internal space for accommodating the second lower antenna 504 .

The cover 310 includes a substantially circular or rectangular flat portion and a sidewall portion extending upward from the flat portion to correspond to the shape of the substrate support 300 , and as it is coupled to the lower surface of the substrate support 300 , a predetermined internal space can provide As described above, the first lower antenna 502 and the second lower antenna 504 are disposed in the inner space provided by the cover 310 coupled to the lower surface of the substrate support 300 , so that the lower antenna 500 is connected to the substrate support. It is possible to move up and down in conjunction with 300 .

At this time, the magnetic field generated from the lower antenna 500 needs to propagate only to the upper portion of the substrate support 300 . That is, the process gas needs to be excited on the substrate S to deposit the thin film, and when the magnetic field generated from the lower antenna 500 propagates to the lower portion of the substrate support 300 , the parasitic parasitic in the lower portion of the substrate support 300 . Since plasma is generated, there is a fear that unwanted deposits may be generated in the lower portion of the chamber 100 by the excited process gas. In addition, the substrate support 300 is provided with various power supplies for moving the substrate support 300 up and down or for supplying electric power to heaters and electrostatic components installed on the substrate support 300 . At this time, it is necessary to block the magnetic field from propagating to the lower portion of the substrate support 300 also in order to minimize the occurrence of errors in the operation of the power device due to the magnetic field propagating to the lower portion of the substrate support 300 .

To this end, the substrate support 300 and the cover 310 may be made of different materials. That is, the entirety of the substrate support 300 or a portion including the seating surface of the substrate support 300 and the cover 310 may be made of different materials. At this time, at least a portion including the seating surface of the substrate support 300 may be made of at least one of a paramagnetic material capable of passing a magnetic field, for example, aluminum (Al), ceramic, etc., and the cover ( The 310 may be formed of at least one of a ferromagnetic material capable of shielding a magnetic field, for example, a material such as steel or SUS (Steel Use Stainless).

Here, the cover 310 may be provided with a corrosion prevention layer (not shown) on the exposed surface. That is, the cover 310 may be provided with a corrosion prevention layer on the outer surface and the bottom surface. The substrate processing apparatus may be cleaned in-situ after the thin film is deposited. In this cleaning process, most of the cleaning gas containing fluorine (F) is supplied to the process space. do. At this time, when the cover 310 is made of a material such as steel, SUS (Steel Use Stainless), etc., since the cover 310 may be corroded by fluorine (F), in order to prevent corrosion of the cover 310 An anti-corrosion layer may be provided on the exposed surface. The anti-corrosion layer may be made of at least one of materials such as aluminum (Al) and ceramic (ceramic), whereby the outer surfaces of the substrate support 300 and the cover 310 are entirely made of aluminum (Al), ceramic (ceramic), and the like. Since it is made of the same material, it is possible to prevent corrosion from occurring in the cleaning process.

Meanwhile, an insulating member 320 made of an insulating material may be provided in the inner space provided by the cover 310 coupled to the lower surface of the substrate support 300 . Here, the insulating member 320 is made of an insulating material such as a dielectric, and may fill the remaining internal space except for the space in which the lower antenna 500 is disposed. The lower antenna 500 may be stably supported in the inner space by the insulating part 320 , and the magnetic field generated from the lower antenna 500 may be effectively propagated to the upper portion of the substrate support 300 .

As described above, the lower antenna 500 is provided in the inner space provided by the cover 310 coupled to the lower surface of the substrate support 300 . At this time, the lower antenna 500 receives power from the first power source 510 . In this case, the power supply line connecting the lower antenna 500 and the first power source 550 needs not to be exposed to the process space in order to prevent damage such as corrosion.

To this end, the substrate processing apparatus according to an embodiment of the present invention may further include an electrode unit connected to the lower antenna 500 to receive power from the first power source 510 . Here, the electrode part includes a connection part 520 connected to the lower antenna 500 and extending on the support shaft 400 and a terminal part 530 extending downward from the connection part 520 inside the support shaft 400 . can do. A pair of the connection part 520 and the terminal part 530 may be provided for each of the first lower antenna 502 and the second lower antenna 504 .

In more detail, one end of the first lower antenna 502 is connected to any one of the pair of first connection parts 522 , and the first connection part 522 extends on the support shaft 400 to form a pair of It is connected to any one of the first terminal parts 532 . Here, the first terminal part 532 may extend downward from the inside of the support shaft 400 , may be exposed to the lower end of the support shaft 400 , and may be connected to the 1-1 power supply 512 . On the other hand, the other end of the first lower antenna 502 is connected to the other one of the pair of first connection parts 522 , the first connection part 522 extends on the support shaft 400 , and the pair of first terminal parts 532 is linked to the other one. Here, the first terminal part 532 may extend downward from the inside of the support shaft 400 , and may be exposed to a lower end of the support shaft 400 to be grounded.

In addition, one end of the second lower antenna 504 is connected to any one of the pair of second connection units 524 , and the second connection unit 524 extends on the support shaft 400 to extend the pair of second terminal units. (534) is connected to any one of. Here, the second terminal part 534 may extend downward from the inside of the support shaft 400 , may be exposed to a lower end of the support shaft 400 , and may be connected to the 1-2 th power source 514 . On the other hand, the other end of the second lower antenna 504 is connected to the other one of the pair of second connection parts 524 , and the second connection part 524 extends on the support shaft 400 and is a pair of second terminal parts. (534) is connected to the other one. Here, the first terminal part 534 may extend downward from the inside of the support shaft 400 , and may be exposed to the lower end of the support shaft 400 to be grounded.

Here, the first connection part 522, the first terminal part 532, and the second connection part 524 and the second terminal part 534 have power from the 1-1 power supply 512 and the 1-2 power supply 514, respectively. This can be supplied. In this case, the first connection part 522 and the second connection part 524 are positioned on the same plane as the first lower antenna 502 and the second lower antenna 504 , and the first connection part 522 and the second connection part An undesired magnetic field is generated in the upper portions of the first connecting portion 522 and the second connecting portion 524 by 524 . As such, when a magnetic field is generated, a uniform magnetic field may not be generated upwards of the substrate support 300 , so in an embodiment of the present invention, the first connection part 522 and the second 2 A shielding layer 330 overlapping at least a portion of the connection part 524 is provided. The shielding layer 330 may be made of a material capable of shielding a magnetic field, and in this way, when the shielding layer 330 is provided on the first connection part 522 and the second connection part 524 , the first connection part 522 . ) and the second connection part 524 prevent the magnetic field from propagating to the upper part of the substrate support 300 , and thus the first lower antenna 502 and the second lower antenna 504 to the upper part of the substrate support 300 . ) can only propagate and form a uniform magnetic field.

In addition, the lower antenna 500 , that is, the first lower antenna 502 and the second lower antenna 504 may have a flow path for flowing the cooling medium C therein. The substrate S on the substrate support 300 may be heated by a heater 402 or the like, but the substrate S needs to be cooled in order to control the temperature of the substrate S. Here, in the substrate processing apparatus according to an embodiment of the present invention, a flow path for flowing the cooling medium C is formed in the lower antenna 500 , and a separate cooling device is installed in the substrate support 300 . The substrate S may be cooled by flowing the cooling medium C in the flow path formed along the lower antenna 500 without it. When the first connection part 522 and the first terminal part 532 are connected to the first lower antenna 502 and the second connection part 524 and the second terminal part 534 are connected to the second lower antenna 504 , the flow path communicates all of the first lower antenna 502 , the first connection part 522 , and the first terminal part 532 , and the second lower antenna 504 , the second connection part 524 and the second terminal part 534 . may be formed to communicate with all, and the cooling medium C may be supplied from one end of each of the lower antennas 502 and 504 along the communicating flow path, and discharged to the other end.

Meanwhile, the substrate support 300 may have various accessory parts. That is, the substrate support 300 may have a heater 302 for heating the substrate S therein. In addition, the substrate support 300 has an electrostatic component (not shown) for electrostatically fixing the substrate S to the substrate support 300 , and may function as an electrostatic chuck. Such accessory parts of the substrate support 300 may be connected to the fourth power source 304 through a power supply line extending from the inside of the support shaft 400 . The power supplied from the fourth power source 304 may include DC power, and may include AC power in addition to DC power.

However, as described above, the power supply line connecting the lower antenna 500 and the first power source 510 is also disposed inside the support shaft 400 . Here, power having a frequency of 400 kHz, 2 MHz, 13.56 MHz, 27.12 Mhz, etc. is supplied from the first power source 510 , and DC power is supplied from the fourth power source 304 , and the first power source 510 ) and the power supplied from the fourth power source 304 may have different frequencies. In this case, the frequency component of the power supplied from the first power source 510 acts as a noise on the power supply line connecting the fourth power source 304 and accessory parts such as the heater 302 to the fourth power source ( It may cause a malfunction of the 304 or damage the fourth power source 304 . Therefore, in an embodiment of the present invention, a filter 306 for removing the frequency component of the power supplied from the first power source 510 is installed between the accessory parts of the substrate support 300 and the fourth power source 304 . Thus, it is possible to prevent the operating power source 304 from being damaged. In the drawings, only the heater 302 installed in the inside of the substrate support 300 is illustrated as an accessory part, but this can be applied to various parts such as electrostatic parts that make the substrate support 300 function as an electrostatic chuck. am.

Hereinafter, a thin film deposition method according to an embodiment of the present invention will be described. Since the thin film deposition method according to an embodiment of the present invention may be performed using the above-described substrate processing apparatus, descriptions of contents overlapping with the above-described contents in relation to the substrate processing apparatus will be omitted.

4 is a view for explaining a thin film deposition method according to an embodiment of the present invention.

Referring to FIG. 4 , in the method for depositing a thin film according to an embodiment of the present invention, the process of seating the substrate S on the seating surface of the substrate support 300 provided in the process space within the chamber 100 ( S100 ), the above The process of supplying power to the lower antenna 500 provided under the seating surface of the substrate support 300 to generate a magnetic field (S200) and forming a first plasma in the process space from the generated magnetic field to deposit a first thin film It includes a process (S300).

In the process of seating the substrate S ( S100 ), first, the substrate S is loaded into the chamber 100 . The substrate S may be loaded into the process space inside the chamber 100 , and the substrate S loaded into the chamber 100 may be seated and supported on the substrate support 300 . Here, the chamber 100 may be a vacuum chamber, and the thin film deposition method according to an embodiment of the present invention may further include a process of forming a vacuum inside the chamber 100 .

In the process of generating a magnetic field ( S200 ), power is supplied to the lower antenna 500 provided under the substrate support 300 to generate a magnetic field. Here, the lower antenna 500 is provided under the substrate support 300 and receives power from the first power source 510 to generate a magnetic field in the vertical direction. At this time, the lower antenna 500 is provided to at least partially surround the virtual central axis X extending downward from the center of the substrate support 300 , and receives power from the first power source 510 to enter the process space. Plasma may be generated by an inductively coupled plasma (ICP) method.

In addition, in the process of generating a magnetic field ( S200 ), power may be supplied to the first lower antenna 502 and the second lower antenna 504 provided to be spaced apart from each other at different intervals from the central axis of the substrate support 300 , respectively. . That is, the lower antenna 500 may include a first lower antenna 502 and a second lower antenna 502 spaced apart from each other at different intervals from the central axis X and provided to surround the central axis X. there is. At this time, the first power supply 510 includes the 1-1 power supply 512 and the 1-2 power supply 514 to individually supply power to the first lower antenna 502 and the second lower antenna 504 . can supply In this case, at least one of the intensity and frequency of power supplied to the first lower antenna 502 and the second lower antenna 504 may be individually controlled. That is, in the embodiment of the present invention, power is individually supplied to the first lower antenna 502 and the second lower antenna 504 from the 1-1 power supply 512 and the 1-2 power supply 514, respectively, By branching the power supply line to which power is supplied from the first power source 510 , the density of the generated plasma may be controlled at the center and the edge of the process space, respectively. Thereby, the thickness of the thin film deposited on the substrate S can be controlled at the center and the edge, respectively, so that a uniform thin film can be deposited.

In addition, the thin film deposition method according to an embodiment of the present invention may further include a process of generating a magnetic field by supplying power to the side antenna 600 provided to surround the process space from the side. In this way, by further generating a magnetic field by the side antenna 600 additionally provided to surround the process space from the side in addition to the lower antenna 500, the density of plasma generated at the edge of the process space can be relatively increased. , thereby making it possible to generate a uniform plasma even when the process space is widened by a large-area substrate.

The process of depositing a thin film forming a first plasma (S300) is to form a first plasma in the process space from a magnetic field generated by supplying power to the lower antenna 500 or the lower antenna 500 and the side antenna 600, A first thin film is deposited. Here, both the lower antenna 500 and the side antenna 600 generate a magnetic field, and in the process of depositing a thin film forming the first plasma (S300), the first plasma may be formed by an inductive coupling method, and the formed The first thin film may be deposited using the first plasma.

Here, the inductive coupling method generates a magnetic field in the vertical direction from the current flowing through the antenna, and the charged particles rotate in the horizontal direction with the substrate by the magnetic field generated in the vertical direction to generate plasma by mutual collision. Accordingly, in the inductive coupling method, since the charged particles move in a horizontal direction to the substrate and do not collide with the substrate, damage to the substrate is minimized, and high-density plasma can be generated by continuously collided with the process gas. Therefore, in the process of depositing the thin film by forming the first plasma ( S300 ), the first thin film is deposited while suppressing or preventing collision between the charged particles and the substrate S without accelerating the charged particles in the direction of the substrate S. can Through this, it is possible to solve the problem that the charged particles collide with the substrate (S) and damage the substrate (S).

The substrate processing method according to an embodiment of the present invention may further include forming a second plasma having characteristics different from those of the first plasma in a process space to deposit a second thin film (S400). That is, in the process of depositing the second thin film ( S400 ), a second plasma having different characteristics from the first plasma may be formed in a process space using an inductive coupling method and a capacitive coupling method to deposit the second thin film.

Here, in the process of depositing the second thin film by forming the second plasma ( S400 ), the gas in the chamber 100 is supplied with power to the lower antenna 500 or the lower antenna 500 and the side antenna 600 . The second thin film may be deposited on the first thin film by further supplying power to at least one of a showerhead for distributing a process gas and the substrate support 300 provided in the supply unit 200 .

In the case of depositing the thin film by forming plasma only by the inductive coupling method, acceleration of the charged particles in the direction of the substrate S may be insufficient, and thus the density of the thin film may be decreased. In addition, in the case of depositing a thin film by forming a plasma only by an inductive coupling method, it may be difficult to effectively activate the deposition gas as the size of the substrate increases.

Therefore, in the substrate processing method according to an embodiment of the present invention, the showerhead and the substrate supporter ( 300) is further supplied with power to form a second plasma having characteristics different from those of the first plasma.

The second plasma is a plasma that is generated using both the inductive coupling method and the capacitive coupling method. The charged particles rotate and move in the horizontal direction with the substrate by the inductive coupling method and at the same time, the charged particles are separated from the showerhead by the capacitive coupling method. The charged particles moving in the vertical direction between the substrate supports 300 and moving in a horizontal direction with the surface of the substrate S are accelerated in the direction of the substrate S to cause a spiral movement. That is, the density of the active species activated by the deposition gas can be increased by confining the charged particles in the plasma for a predetermined time through the charged particles moving in a circle in a direction parallel to the surface of the substrate S by the inductive coupling method. By pushing the active species with increased density in the substrate S direction through charged particles accelerated in the substrate S direction by an electric field perpendicular to the surface of the substrate S, a dense second thin film can be deposited. At this time, the acceleration of the charged particles in the substrate direction can provide energy for thin film formation to the active species, and by pushing the high-density active species in the substrate direction, the active species can be closely adhered to the substrate (S). Also, the effect of compacting the formed thin film may be obtained. Accordingly, the density of the second thin film may be improved.

As described above, in the embodiment of the present invention, a first thin film is deposited on a substrate using a first plasma and a second plasma having different characteristics, and a second thin film is deposited on the first thin film, thereby forming the substrate (S). While preventing this damage, it is possible to form a thin film with high density on the substrate S. Here, the first thin film may be deposited thinner than the second thin film. That is, the first thin film is to prevent damage to the substrate S, and since it has a lower density than the second thin film, the second thin film may be deposited thicker than the first thin film. In addition, the first thin film and the second thin film may be made of the same material, only different in density. That is, the first thin film and the second thin film are thin films continuously formed on the substrate S using the same deposition gas in order to perform the same function, and may be made of the same material.

As described above, according to the substrate processing apparatus and the thin film deposition method using the same according to an embodiment of the present invention, the magnetic field is generated at a position closest to the substrate in the process space by generating a magnetic field under the seating surface of the substrate support on which the substrate is mounted. to form a plasma. Accordingly, the thin film can be effectively deposited by the high-density plasma maintained on the substrate.

In addition, the first lower antenna and the second lower antenna provided to be spaced apart from each other at different intervals from the central axis of the substrate support are respectively disposed, and each lower antenna is provided by a power source capable of individually controlling at least one of the intensity and frequency of power. By supplying power to the antenna, the density of plasma in the process space can be controlled at the center and the edge, respectively. From this, the density of plasma in the process space can be uniformly controlled, and a uniform thin film can be deposited on a large-area substrate used in a display device by activating the process gas uniformly in the process space.

In addition, by continuously depositing the first thin film and the second thin film on the substrate using the first plasma and the second plasma having different characteristics, a thin film with high density is formed on the substrate while preventing damage to the substrate can do. That is, the first thin film is deposited using a first plasma that suppresses or prevents collisions between the charged particles and the substrate by moving the charged particles in a direction parallel to the surface of the substrate, and the charged particles moving in a direction parallel to the surface of the substrate are removed. By accelerating and spirally moving in the direction of the substrate, the density of active species is increased and the second thin film having a dense structure is deposited, thereby preventing damage to the substrate and forming a thin film with high density.

In the above, preferred embodiments of the present invention have been described and illustrated using specific terms, but such terms are only for clearly explaining the present invention, and the embodiments of the present invention and the described terms are the spirit of the following claims And it is obvious that various changes and changes can be made without departing from the scope. Such modified embodiments should not be individually understood from the spirit and scope of the present invention, but should be said to fall within the scope of the claims of the present invention.

100: chamber 200: gas supply unit
300: substrate support 400: support shaft
500: lower antenna 600: side antenna

Claims (20)

a chamber providing process space;
a gas supply unit for supplying a process gas to the process space;
a substrate support disposed opposite the gas supply unit and having a seating surface for supporting a substrate provided in the process space;
a lower antenna provided under the seating surface and configured to generate a magnetic field to form plasma in the process space; and
and a first power supply for supplying power to the lower antenna.
The method according to claim 1,
The lower antenna is provided to at least partially surround the central axis of the substrate support.
3. The method according to claim 2,
The lower antenna includes a first lower antenna and a second lower antenna that are provided to be spaced apart from each other at different intervals from the central axis.
4. The method according to claim 3,
Power supplied to each of the first lower antenna and the second lower antenna is individually controlled.
The method according to claim 1,
and a second power source provided in the gas supply unit to supply power to at least one of a showerhead for distributing a process gas and a substrate support.
The method according to claim 1,
a side antenna provided to surround at least a portion of the process space from a side; and
The substrate processing apparatus further comprising; a third power supply for supplying power to the side antenna.
The method according to claim 1,
Further comprising; a cover coupled to the lower surface of the substrate support to provide an internal space for accommodating the lower antenna;
The cover is a substrate processing apparatus provided with a material different from that of at least a portion including a seating surface of the substrate support.
8. The method of claim 7,
At least a portion including the seating surface of the substrate support is made of a material capable of passing a magnetic field,
The cover is a substrate processing apparatus made of a material capable of shielding a magnetic field.
8. The method of claim 7,
The substrate processing apparatus further comprising: an insulating member made of an insulating material and filled in the remaining internal space except for the space in which the lower antenna is disposed.
8. The method of claim 7,
The cover is a substrate processing apparatus having a corrosion protection layer provided on the exposed surface.
The method according to claim 1,
a support shaft provided under the substrate support to move the substrate support up and down; and
Further comprising; an electrode unit connected to the lower antenna and receiving power from the first power source via the support shaft;
The electrode part,
a connection part connected to the lower antenna and extending on the support shaft; and
and a terminal part connected to the connection part and extending downwardly from the inside of the support shaft.
12. The method of claim 11,
A substrate processing apparatus provided with a shielding layer made of a material capable of shielding a magnetic field on a lower surface of the substrate support overlapping at least a portion of the connection part.
The method according to claim 1,
The lower antenna is a substrate processing apparatus having a flow path for flowing a cooling medium therein.
The method according to claim 1,
a fourth power source for supplying power to accessory parts installed on the substrate support; and
and a filter installed on a power supply line connecting the accessory component and a fourth power source to remove a frequency component of power supplied from the first power source.
a process of seating a substrate on a seating surface of a substrate support provided in a process space within the chamber;
generating a magnetic field by supplying power to a lower antenna provided under the seating surface; and
and depositing a first thin film by forming a first plasma in the process space in an inductively coupled manner from the generated magnetic field.
16. The method of claim 15,
The process of generating the magnetic field is
A thin film deposition method for supplying power to a first lower antenna and a second lower antenna respectively provided to be spaced apart from each other at different intervals from the central axis of the substrate support.
17. The method of claim 16,
The process of generating the magnetic field is
A thin film deposition method for individually controlling at least one of an intensity and a frequency of power supplied to the first lower antenna and the second lower antenna.
16. The method of claim 15,
and generating a magnetic field by supplying power to a side antenna provided to surround at least a portion of the process space.
16. The method of claim 15,
and depositing a second thin film by forming a second plasma in the process space using an inductive coupling method and a capacitive coupling method to have different characteristics from the first plasma.
20. The method of claim 19,
The process of depositing the second thin film,
In a state in which power is supplied to the lower antenna, the second thin film is provided on the gas supply unit in the chamber to further supply power to at least one of a showerhead and the substrate support for distributing a process gas, the second thin film on the first thin film A thin film deposition method for depositing

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