JP2016145385A - Film deposition apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress contamination to a substrate caused by foreign matter generated in a film deposition chamber.SOLUTION: A film deposition apparatus comprises a treatment container, a partition plate, a mounting table that is installed in a film deposition chamber, a first gas supply part that supplies a film forming gas to the film deposition chamber, a second gas supply part that supplies a rare gas to a plasma generation chamber, a first plasma source that generates plasma of the film forming gas and plasma of the rare gas in the plasma generation chamber, a second plasma source that generates plasma of the film forming gas in the plasma generation chamber, and a control part that performs precoat treatment to the plasma generation chamber and the film deposition chamber by generating the plasma of the film forming gas in the first and second plasma sources in a state where other substrates other than a substrate to be deposited are mounted on the mounting table, and performs film deposition treatment to the substrate using neutral particles by generating the plasma of the rare gas in the first plasma source in a state where the substrate is mounted on the mounting table in the film deposition chamber where the precoat treatment has been performed.SELECTED DRAWING: Figure 1

Description

  Various aspects and embodiments of the present invention relate to a film forming apparatus and a film forming method.

  Conventionally, there is a film forming apparatus in which a partition plate having a plurality of openings is provided in a processing container, and the processing container is partitioned into a plasma generation chamber and a film forming chamber by the partition plate. The partition plate neutralizes the ions by donating electrons to the ions passing through the plurality of openings. Particles obtained by neutralizing ions (hereinafter referred to as “neutral particles”) are irradiated with a film-forming gas in the film-forming chamber, thereby exciting the film-forming gas and generating active species generated from the film-forming gas. Falls on the substrate placed on the mounting table in the film formation chamber. As a result, a desired thin film is formed on the substrate. A film forming apparatus that performs a film forming process using neutral particles in this way is sometimes called a “neutral particle beam film forming apparatus”.

  By the way, in the neutral particle beam film forming apparatus, since the inner wall of the plasma generation chamber is exposed to the plasma of the film forming gas, foreign matter such as metal is generated, so in order to improve the plasma resistance of the plasma generation chamber, It is known to perform a precoat process for forming a protective film in the plasma generation chamber. As such a technique, for example, a plasma source is provided in the plasma generation chamber, and a plasma of the deposition gas is generated in the plasma generation chamber using the plasma source in a state where the dummy substrate is mounted on the mounting table. Thus, there is a technique for performing a pre-coating process on the plasma generation chamber.

JP 2005-150622 A

  However, in the above-described conventional technology, no consideration is given to suppressing contamination of the substrate caused by foreign matter generated in the film formation chamber.

  That is, in the prior art, since the precoat process is performed only on the plasma generation chamber, it is difficult to form a protective film in the deposition chamber. For this reason, in the prior art, when a film forming process is performed on a substrate mounted on a mounting table in a film forming chamber where a protective film is not formed, active species generated from a film forming gas, or Neutral particles irradiated from the partition plate may damage the inner wall of the film forming chamber and generate foreign substances such as metal. As a result, in the prior art, the substrate may be contaminated by foreign matter generated in the film forming chamber.

  A film forming apparatus according to one aspect of the present invention includes a processing container, a partition plate having a plurality of openings, and partitioning the inside of the processing container into a plasma generation chamber and a film forming chamber, and the film forming chamber. A mounting table for mounting a substrate to be formed; a gas supply unit that supplies a film forming gas used for a film forming process to the film forming chamber; and A first plasma source for generating plasma of the film-forming gas flowing from the film-forming chamber through the opening; and a first plasma source for generating plasma of the film-forming gas supplied to the film-forming chamber in the film-forming chamber. And generating plasma of the film-forming gas in the first plasma source and the second plasma source in a state where the substrate other than the substrate is mounted on the mounting table. The plasma generation chamber and the film formation chamber. Performing pre-coating treatment, and generating plasma of the film-forming gas in the first plasma source in a state where the substrate is placed on the mounting table in the film-forming chamber where the pre-coating treatment has been performed. And a controller for performing a film forming process on the substrate.

  According to various aspects and embodiments of the present invention, a film forming apparatus and a film forming method capable of suppressing contamination of a substrate due to foreign matters generated in a film forming chamber are realized.

FIG. 1 is a diagram illustrating a configuration example of a film forming apparatus according to an embodiment. FIG. 2 is a plan view showing an example of the slot plate. FIG. 3 is a flowchart illustrating an example of a processing flow of a film forming method using the film forming apparatus according to the embodiment. FIG. 4 is a flowchart illustrating another example of the processing flow of the film forming method using the film forming apparatus according to the embodiment. FIG. 5 is a diagram showing an outline of Modification 1 of the film forming apparatus according to the embodiment. FIG. 6 is a diagram illustrating an outline of Modification 2 of the film forming apparatus according to the embodiment. FIG. 7 is a diagram illustrating an outline of Modification 3 of the film forming apparatus according to the embodiment.

  In one embodiment, the disclosed film formation apparatus is provided in a film formation chamber, a partition having a processing container, a plurality of openings, and partitioning the inside of the processing container into a plasma generation chamber and a film formation chamber. A mounting table for mounting a substrate to be filmed, a first gas supply unit for supplying a film forming gas used for film forming processing to the film forming chamber, and a rare gas for plasma excitation to be supplied to the plasma generating chamber In the second gas supply unit and the plasma generation chamber, the plasma of the film formation gas supplied from the film formation chamber through the plurality of openings of the partition plate and supplied to the film formation chamber by the first gas supply unit, or A first plasma source that generates a plasma of a rare gas supplied by the second gas supply unit, and a film formation gas plasma that is supplied to the film formation chamber by the first gas supply unit in the film formation chamber. The second plasma source and the mounting table With the other substrate mounted, the plasma generation chamber and the deposition chamber are pre-coated by generating plasma of the deposition gas in the first plasma source and the second plasma source, Supplying the first plasma source to the film formation chamber through a plurality of openings in the partition plate by generating a rare gas plasma in the first plasma source in a state where the substrate is mounted on the mounting table in the film formation chamber where the precoat treatment has been performed. And a control unit that performs a film forming process on the substrate using the neutral particles.

  In one embodiment of the disclosed film formation apparatus, the first plasma source emits microwaves to the plasma generation chamber so that plasma of a deposition gas or plasma of a rare gas is generated in the plasma generation chamber. The second plasma source generates a plasma of a deposition gas in the deposition chamber by supplying high-frequency power to an electrode, a partition plate, or a mounting table provided in the deposition chamber.

  In one embodiment of the disclosed film formation apparatus, the first plasma source forms an induction electric field in the plasma generation chamber when high-frequency power is supplied, thereby forming the film in the plasma generation chamber. Gas plasma or rare gas plasma is generated, and the second plasma source supplies high-frequency power to an electrode, a partition plate, or a mounting table provided in the film formation chamber. The film forming apparatus generates high-frequency power from the second plasma source with respect to any one of the electrode, the partition plate or the mounting table provided in the film forming chamber, and the first plasma source. Is further provided.

  In one embodiment, the disclosed film formation method includes a processing container, a partition plate having a plurality of openings, and partitioning the processing container into a plasma generation chamber and a film formation chamber, and the film formation chamber. , A mounting table for mounting a substrate to be deposited, a first gas supply unit that supplies a deposition gas used for a deposition process to the deposition chamber, and a rare gas for plasma excitation to the plasma generation chamber In the plasma generation chamber, the plasma of the film formation gas flowing from the film formation chamber through the plurality of openings of the partition plate, or the rare gas supplied by the second gas supply unit A film forming apparatus comprising: a first plasma source for generating plasma; and a second plasma source for generating plasma of a film forming gas supplied to the film forming chamber by the first gas supply unit in the film forming chamber. The film formation method used is based on the mounting table. The plasma generation chamber and the deposition chamber are pre-coated by generating plasma of the deposition gas in the first plasma source and the second plasma source in a state where the other substrate is placed. In a state where the substrate is mounted on the mounting table in the film forming chamber where the process and the pre-coating process have been performed, the first plasma source generates a rare gas plasma, thereby forming a film through a plurality of openings in the partition plate. And a step of forming a film on the substrate using neutral particles supplied to the chamber.

  In one embodiment, the disclosed film formation method includes a step of performing a precoat treatment on the plasma generation chamber and the film formation chamber, after performing the precoat treatment on the plasma generation chamber. To pre-coat.

  In one embodiment, the disclosed film formation method includes a step of performing a precoat process on the plasma generation chamber and the film formation chamber, after performing the precoat process on the film formation chamber. To pre-coat.

  In one embodiment, the disclosed film formation method includes a step of performing a precoat process on the plasma generation chamber and the film formation chamber. To pre-coat.

  In one embodiment, the disclosed film formation method includes a step of performing a precoat process on the plasma generation chamber and the film formation chamber each time film formation is performed on two or more substrates. A pre-coating process is performed on the film chamber.

  In one embodiment of the disclosed film formation method, the film formation apparatus further includes a third gas supply unit that supplies a cleaning gas to the plasma generation chamber, and the first plasma source is in the plasma generation chamber. The plasma of the cleaning gas supplied to the plasma generation chamber by the third gas supply unit is generated, and the second plasma source is supplied to the plasma generation chamber by the third gas supply unit in the film formation chamber and is partitioned. The plasma of the cleaning gas flowing from the plasma generation chamber through the plurality of openings of the plate is generated, and the film formation method is performed by applying another pre-treatment process to the plasma generation chamber and the film formation chamber. A plasma generation chamber and a film formation chamber are generated by generating a cleaning gas plasma in the first plasma source and the second plasma source in a state where the substrate is placed. Further comprising the step of performing a cleaning process for.

  In one embodiment, the disclosed film formation method includes a step of performing a cleaning process on the plasma generation chamber and the film formation chamber. Cleaning process.

  In one embodiment, the disclosed film formation method includes a step of performing a cleaning process on the plasma generation chamber and the film formation chamber. Cleaning process.

  In one embodiment of the disclosed film formation method, the step of performing the cleaning process on the plasma generation chamber and the film formation chamber is performed on the film formation chamber at the same time as performing the cleaning process on the plasma generation chamber. Cleaning process.

  In one embodiment, the disclosed film formation method includes a step of performing a cleaning process on the plasma generation chamber and the film formation chamber each time a film formation process is performed on two or more substrates. A cleaning process is performed on the film chamber.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

  FIG. 1 is a diagram illustrating a configuration example of a film forming apparatus according to an embodiment. A film forming apparatus 10 shown in FIG. The processing container 12 is a substantially cylindrical container extending in a direction in which the axis Z extends (hereinafter referred to as “axis Z direction”), and defines a space in the inside thereof. This space is partitioned into a plasma generation chamber S1 and a film formation chamber S2 provided below the plasma generation chamber S1 by a partition plate 40 described later.

  In one embodiment, the processing container 12 may include a first side wall 12a, a second side wall 12b, a bottom portion 12c, and a lid portion 12d. The first side wall 12a has a substantially cylindrical shape extending in the axis Z direction, and defines the plasma generation chamber S1.

  Gas lines P11 and P12 are formed on the first side wall 12a. The gas line P11 extends from the outer surface of the first side wall 12a and is connected to the gas line P12. The gas line P12 extends substantially annularly about the axis Z in the first side wall 12a. A plurality of injection ports H1 for injecting gas into the plasma generation chamber S1 are connected to the gas line P12.

  A gas source G1 is connected to the gas line P11 via a valve V11, a mass flow controller M1, and a valve V12. The gas source G1 is a rare gas source for plasma excitation, and in one embodiment, a gas source of Ar gas. These gas source G1, valve V11, mass flow controller M1, valve V12, gas lines P11 and P12, and injection port H1 constitute a rare gas supply system. This rare gas supply system controls the flow rate of the rare gas from the gas source G1 in the mass flow controller M1, and supplies the rare gas whose flow rate is controlled to the plasma generation chamber S1. The rare gas supply system is an example of a second gas supply unit.

  In addition, a gas source G2 is connected to the gas line P11 through a valve V21, a mass flow controller M2, and a valve V22. The gas source G2 is a gas source of the cleaning gas, and supplies, for example, NF3 or SF6 as the cleaning gas. These gas source G2, valve V22, gas lines P11 and P12, and injection port H1 constitute a cleaning gas supply system. This cleaning gas supply system controls the flow rate of the cleaning gas from the gas source G2 in the mass flow controller M2, and supplies the cleaning gas whose flow rate has been controlled to the plasma generation chamber S1. The cleaning gas supply system is an example of a third gas supply unit.

  A lid 12d is provided at the upper end of the first side wall 12a. The lid 12d is provided with an opening, and the antenna 14 is provided in the opening. Further, a dielectric window 16 is provided immediately below the antenna 14 so as to seal the plasma generation chamber S1.

  The antenna 14 radiates microwaves to the plasma generation chamber S1, thereby generating film forming gas plasma or rare gas plasma in the plasma generation chamber S1. For example, the antenna 14 emits microwaves to the plasma generation chamber S1 through the dielectric window 16, and is supplied to the film formation chamber S2 by the film formation gas supply system described later in the plasma generation chamber S1. The plasma of the film forming gas flowing from the film forming chamber S2 through the plurality of openings 40h of the plate 40 is generated. Further, for example, the antenna 14 emits microwaves to the plasma generation chamber S1 through the dielectric window 16, thereby generating a rare gas plasma supplied by the rare gas supply system in the plasma generation chamber S1. . The antenna 14 is an example of a first plasma source. In one embodiment, the antenna 14 is a radial line slot antenna. The antenna 14 includes a dielectric plate 18 and a slot plate 20. The dielectric plate 18 shortens the wavelength of the microwave and has a substantially disk shape. The dielectric plate 18 is made of, for example, quartz or alumina. The dielectric plate 18 is sandwiched between the slot plate 20 and the metal lower surface of the cooling jacket 22. The antenna 14 can thus be constituted by the dielectric plate 18, the slot plate 20, and the lower surface of the cooling jacket 22.

  The slot plate 20 is a substantially disk-shaped metal plate in which a plurality of slot pairs are formed. FIG. 2 is a plan view showing an example of the slot plate. A plurality of slot pairs 20 a are formed in the slot plate 20. The plurality of slot pairs 20a are provided at predetermined intervals in the radial direction, and are arranged at predetermined intervals in the circumferential direction. Each of the plurality of slot pairs 20a includes two slot holes 20b and 20c. The slot hole 20b and the slot hole 20c extend in a direction intersecting or orthogonal to each other.

  The film forming apparatus 10 can further include a coaxial waveguide 24, a microwave generator 26, a tuner 28, a waveguide 30, and a mode converter 32. The microwave generator 26 generates a microwave having a frequency of 2.45 GHz, for example. The microwave generator 26 is connected to the upper portion of the coaxial waveguide 24 via a tuner 28, a waveguide 30, and a mode converter 32. The coaxial waveguide 24 extends along the axis Z that is the central axis thereof. The coaxial waveguide 24 includes an outer conductor 24a and an inner conductor 24b. The outer conductor 24a has a cylindrical shape extending in the center of the axis Z. The lower end of the outer conductor 24a can be electrically connected to the top of the cooling jacket 22 having a conductive surface. The inner conductor 24b is provided inside the outer conductor 24a. The inner conductor 24b has a substantially cylindrical shape extending along the axis Z. The lower end of the inner conductor 24 b is connected to the slot plate 20 of the antenna 14.

  In the film forming apparatus 10, the microwave generated by the microwave generator 26 is propagated to the dielectric plate 18 through the coaxial waveguide 24, and applied to the dielectric window 16 from the slot hole of the slot plate 20. It is done.

  The dielectric window 16 has a substantially disk shape and is made of, for example, quartz or alumina. The dielectric window 16 is provided immediately below the slot plate 20. The dielectric window 16 transmits the microwave received from the antenna 14 and introduces the microwave into the plasma generation chamber S1. As a result, an electric field is generated immediately below the dielectric window 16, and plasma is generated in the plasma generation chamber S1.

  Below the first side wall 12a, the second side wall 12b extends continuously from the first side wall 12a. The second side wall 12b has a substantially cylindrical shape extending in the axis Z direction, and defines the film forming chamber S2. In the film forming chamber S2, a mounting table 36 for mounting the substrate W to be formed is provided. In one embodiment, the mounting table 36 is supported by a support body 38 extending in the axis Z direction from the bottom 12 c of the processing container 12. In one embodiment, the mounting table 36 includes a temperature control mechanism such as a heater or a cooler. Further, the mounting table 36 may include a suction holding mechanism such as an electrostatic chuck.

  Further, in the film forming chamber S2, a pipe P21 extending in an annular shape about the axis Z above the mounting table 36 is provided. A plurality of injection holes H2 for injecting gas into the film forming chamber S2 are formed in the pipe P21. Connected to the pipe P21 is a pipe P22 that extends through the second side wall 12b to the outside of the processing vessel 12. A gas source G3 is connected to the pipe P22 via a valve V31, a mass flow controller M3, and a valve V32. The gas source G3 is a gas source of a film forming gas used for the film forming process, and supplies a precursor gas such as dimethoxytetramethyldisoroxane (DMOTMDS) as the film forming gas. These gas source G3, valve V31, mass flow controller M3, valve V32, pipes P21 and P22, and injection port H2 constitute a film forming gas supply system. In this film forming gas supply system, the flow rate of the precursor gas from the gas source G3 is controlled by the mass flow controller M3, and the precursor gas whose flow rate is controlled is supplied to the film forming chamber S2. The film forming gas supply system is an example of a first gas supply unit.

  In the film forming apparatus 10, a partition plate 40 is provided between the plasma generation chamber S 1 and the film formation chamber S 2, and the plasma generation chamber S 1 and the film formation chamber S 2 are separated from each other by the partition plate 40. . For example, the partition plate 40 is supported by the first side wall 12a. The partition plate 40 is a substantially disk-shaped member. The partition plate 40 has a plurality of openings 40h that allow the plasma generation chamber S1 and the film formation chamber S2 to communicate with each other.

  The partition plate 40 has a shielding property against ultraviolet rays generated in the plasma generation chamber S1. That is, the partition plate 40 can be made of a material that does not transmit ultraviolet rays. In one embodiment, the partition plate 40 donates electrons to ions generated in the plasma generation chamber S1 when the ions pass through the opening 40h while being reflected by the inner wall surface defining the opening 40h. . Thereby, the partition plate 40 neutralizes ions and discharges the neutralized ions, that is, neutral particles, to the film forming chamber S2. In one embodiment, the partition plate 40 may be composed of graphite. In another embodiment, the partition plate 40 may be an aluminum member or an aluminum member having a surface anodized or provided with an yttria film on the surface.

  In one embodiment, a bias power source PG for supplying bias power to the partition plate 40 may be connected to the partition plate 40. The bias power source PG may be a high frequency power source that generates high frequency bias power. Alternatively, the bias power source PG may be a DC power source. When power is applied to the partition plate 40 by the bias power source PG, ions generated in the plasma generation chamber S1 are accelerated toward the partition plate 40. As a result, the speed of the particles passing through the partition plate 40 is increased.

  In the film forming apparatus 10, a pressure regulator 50 and a pressure reducing pump 52 are connected to an exhaust pipe 48 connected to the film forming chamber S2 at the bottom 12c. The pressure regulator 50 and the decompression pump 52 constitute an exhaust device. In the film forming apparatus 10, the flow rate of the rare gas can be adjusted by the mass flow controller M 1, the flow rate of the precursor gas can be adjusted by the mass flow controller M 3, and the exhaust amount can be adjusted by the pressure regulator 50. Thereby, the film-forming apparatus 10 can set the pressures of the plasma generation chamber S1 and the film-forming chamber S2 to arbitrary pressures.

  In one embodiment, the film forming apparatus 10 further includes an electrode 70 and a high frequency power source 72. The electrode 70 is provided in the film forming chamber S2. The electrode 70 is annularly arranged so as to surround the mounting table 36 in the film forming chamber S2.

  The high frequency power source 72 is electrically connected to the electrode 70. The high frequency power source 72 supplies electromagnetic wave energy for exciting the film forming gas supplied from the film forming gas supply system to the film forming chamber S <b> 2 by supplying predetermined high frequency power to the electrode 70. Thereby, the high frequency power source 72 generates plasma of the film forming gas supplied from the film forming gas supply system to the film forming chamber S2 in the film forming chamber S2. The high frequency power source 72 is an example of a second plasma source.

  As shown in FIG. 1, in one embodiment, the film forming apparatus 10 further includes a control unit Cnt. The control unit Cnt may be a controller such as a programmable computer device. The control unit Cnt can control each unit of the film forming apparatus 10 according to a program based on the recipe. For example, the control unit Cnt can send a control signal to the valves V11 and V12 to control supply and stop of supply of the rare gas from the gas source G1, and send a control signal to the mass flow controller M1 to The gas flow rate can be controlled. Further, the control unit Cnt can send a control signal to the valves V21 and V22 to control supply and stop of the cleaning gas from the gas source G2, and send a control signal to the mass flow controller M2 to perform cleaning. The gas flow rate can be controlled. Further, the control unit Cnt can send a control signal to the valves V31 and V32 to control the supply and stop of the film forming gas from the gas source G3, and send a control signal to the mass flow controller M3. The flow rate of the deposition gas can be controlled. Further, the control unit Cnt can send a control signal to the pressure regulator 50 to control the exhaust amount. Further, the control unit Cnt sends a control signal to the microwave generator 26 to control the power of the microwave, and sends a control signal to the high frequency power source 72 to control the power of the high frequency power (RF power). It is possible. Further, the control unit Cnt can send a control signal to the bias power source PG to supply and stop supplying the bias power to the partition plate 40, and further adjust the bias power. Furthermore, the control unit Cnt can control the temperature of the mounting table 36 by sending a control signal to the temperature control mechanism of the mounting table 36.

  For example, the control unit Cnt can control each unit of the film forming apparatus 10 to perform a film forming method described later. To give a detailed example, the control unit Cnt places a deposition gas on the antenna 14 and the high-frequency power source 72 in a state where a substrate other than the substrate W (hereinafter referred to as “dummy substrate”) is mounted on the mounting table 36. By generating plasma, a precoat process is performed on the plasma generation chamber S1 and the film formation chamber S2. Then, the control unit Cnt generates a rare gas plasma on the antenna 14 in a state where the substrate W is mounted on the mounting table 36 in the film forming chamber S2 where the pre-coating process is performed. A film forming process is performed on the substrate W using neutral particles supplied to the film forming chamber S2 through the plurality of openings 40h. Here, the precoat treatment is a treatment for forming a protective film having plasma resistance. The film forming process is a process for forming a desired thin film on the substrate W by excitation of a film forming gas using neutral particles.

  Further, for example, the controller Cnt cleans the antenna 14 and the high-frequency power source 72 in a state where the dummy substrate is mounted on the mounting table 36 before performing the pre-coating process on the plasma generation chamber S1 and the film forming chamber S2. By generating gas plasma, the plasma generation chamber S1 and the film formation chamber S2 can be cleaned. Here, the cleaning process is a process of removing deposits attached to the wall surface of the processing container 12 by performing the previous film forming process.

  Next, an example of the processing flow of the film forming method using the film forming apparatus 10 according to the embodiment will be described. FIG. 3 is a flowchart illustrating an example of a processing flow of a film forming method using the film forming apparatus according to the embodiment.

  As shown in FIG. 3, first, the dummy substrate is carried into the processing container 12 (step S <b> 101) and placed on the mounting table 36. Subsequently, the film forming apparatus 10 performs a cleaning process on the plasma generation chamber S1 (step S102). That is, the control unit Cnt of the film forming apparatus 10 performs a cleaning process on the plasma generation chamber S1 by generating a cleaning gas plasma in the antenna 14 in a state where the dummy substrate is mounted on the mounting table 36. .

  A more detailed example will be described. The control unit Cnt supplies cleaning gas from the cleaning gas supply system to the plasma generation chamber S1, and emits microwaves from the antenna 14 to generate cleaning gas plasma in the plasma generation chamber S1. Thereby, the control unit Cnt performs a cleaning process on the plasma generation chamber S1. When the cleaning process is performed on the plasma generation chamber S1, for example, deposits attached to a portion of the wall surface of the processing container 12 corresponding to the plasma generation chamber S1 are removed.

  Note that the control unit Cnt may use a rare gas for plasma excitation as the additive gas when generating the plasma of the cleaning gas in the plasma generation chamber S1. In this case, the control unit Cnt supplies a rare gas from the rare gas supply system to the plasma generation chamber S1.

  After performing the cleaning process on the plasma generation chamber S1, the film formation apparatus 10 performs the cleaning process on the film formation chamber S2 (step S103). That is, the control unit Cnt of the film forming apparatus 10 performs a cleaning process on the film forming chamber S <b> 2 by generating a cleaning gas plasma in the high frequency power source 72 while the dummy substrate is mounted on the mounting table 36. Do.

  A more detailed example will be described. The controller Cnt generates high-frequency power from the high-frequency power source 72 to the electrode 70 to generate cleaning gas plasma flowing from the plasma generation chamber S1 through the plurality of openings 40h of the partition plate 40 in the film formation chamber S2. . Accordingly, the control unit Cnt performs a cleaning process on the film forming chamber S2. When the cleaning process is performed on the film forming chamber S2, for example, the deposits attached to the portion corresponding to the film forming chamber S2 on the wall surface of the processing container 12 are removed.

  Note that the control unit Cnt may use a rare gas for plasma excitation as an additive gas when generating the cleaning gas plasma flowing from the plasma generation chamber S1 in the film formation chamber S2. In this case, the control unit Cnt supplies a rare gas from the rare gas supply system to the plasma generation chamber S1.

  Subsequently, the film forming apparatus 10 performs a precoat process on the plasma generation chamber S1 (step S104). That is, the control unit Cnt of the film forming apparatus 10 generates a film forming gas plasma on the antenna 14 in a state where the dummy substrate is mounted on the mounting table 36, thereby performing the pre-coating process on the plasma generation chamber S1. Do.

  A more detailed example will be described. The control unit Cnt supplies a film formation gas from the film formation gas supply system to the film formation chamber S2 and radiates microwaves from the antenna 14, so that the plasma generation chamber S1 forms the plurality of openings 40h through the openings 40h. Plasma of a film forming gas flowing from the film chamber S2 is generated. As a result, the control unit Cnt performs a precoat process on the plasma generation chamber S1. When the pre-coating process is performed on the plasma generation chamber S1, for example, a protective film is formed on a portion of the wall surface of the processing container 12 corresponding to the plasma generation chamber S1.

  Note that the control unit Cnt may use a rare gas for plasma excitation as the additive gas when generating plasma of the film forming gas flowing from the film forming room S2 in the plasma generating room S1. In this case, the control unit Cnt supplies a rare gas from the rare gas supply system to the plasma generation chamber S1.

  The film forming apparatus 10 performs the pre-coating process on the plasma generation chamber S1, and then performs the pre-coating process on the film forming chamber S2 (step S105). That is, the control unit Cnt of the film forming apparatus 10 generates the film forming gas plasma in the high frequency power source 72 in a state where the dummy substrate is mounted on the mounting table 36, thereby pre-coating the film forming chamber S2. I do.

  A more detailed example will be described. The control unit Cnt generates high-frequency power from the high-frequency power source 72 to the electrode 70 to generate plasma of a film forming gas in the film forming chamber S2. As a result, the control unit Cnt performs a precoat process on the film forming chamber S2. When the precoat process is performed on the film forming chamber S2, for example, a protective film is formed on a portion of the wall surface of the processing container 12 corresponding to the film forming chamber S2.

  Note that the control unit Cnt may use a rare gas for plasma excitation as the additive gas when generating plasma of the film forming gas in the film forming chamber S2. In this case, the control unit Cnt supplies a rare gas from the rare gas supply system to the plasma generation chamber S1.

  Thereafter, the dummy substrate is separated from the mounting table 36 and carried out of the processing container 12 (step S106). Subsequently, the substrate W is carried into the processing container 12 (Step S <b> 107) and placed on the placement table 36.

  Subsequently, the film forming apparatus 10 performs a film forming process on the substrate W (step S108). That is, the control unit Cnt of the film forming apparatus 10 generates a rare gas plasma in the antenna 14 in a state where the substrate W is mounted on the mounting table 36 in the film forming chamber S2 where the pre-coating process has been performed. Then, a film forming process is performed on the substrate W using neutral particles supplied to the film forming chamber S <b> 2 through the plurality of openings 40 h of the partition plate 40.

  A more detailed example will be described. The controller Cnt supplies a rare gas from the rare gas supply system to the plasma generation chamber S1, supplies a film formation gas from the film formation gas supply system to the film formation chamber S2, and radiates microwaves from the antenna 14. Thus, a rare gas plasma is generated in the plasma generation chamber S1. Ions in the plasma generated in the plasma generation chamber S1 are neutralized by passing through the plurality of openings 40h of the partition plate 40, and neutral particles are supplied to the film formation chamber S2 through the plurality of openings 40h of the partition plate 40. Is done. The neutral particles supplied to the film forming chamber S2 are irradiated with the film forming gas in the film forming chamber S2, thereby exciting the film forming gas and causing the active species generated from the film forming gas to move to the substrate on the mounting table 36. Pour onto W. As a result, a desired thin film is formed on the substrate W. In this way, the control unit Cnt performs a film forming process on the substrate W using neutral particles.

  Thereafter, the substrate W is separated from the mounting table 36 and carried out of the processing container 12 (step S109). Then, when the process is continued (Step S110; No), the film forming apparatus 10 returns the process to Step S101, and when the process is ended (Step S110; Yes), the process ends.

  As described above, the film forming apparatus 10 according to the embodiment includes the processing container 12 and the partition plate 40 that has the plurality of openings 40h and partitions the inside of the processing container 12 into the plasma generation chamber S1 and the film forming chamber S2. And a mounting table 36 for mounting a substrate W to be formed, which is provided in the film forming chamber S2. Further, the film forming apparatus 10 includes a film forming gas supply system that supplies a film forming gas used for the film forming process to the film forming chamber S2, and a rare gas supply system that supplies a rare gas for plasma excitation to the plasma generating chamber S1. And have. In addition, the film forming apparatus 10 includes a plasma of a film forming gas flowing from the film forming chamber S2 through the plurality of openings 40h of the partition plate 40 in the plasma generation chamber S1, or a plasma of a rare gas supplied by a rare gas supply system. It has the antenna 14 which generate | occur | produces. Further, the film forming apparatus 10 includes a high-frequency power source 72 that generates plasma of a film forming gas supplied to the film forming chamber S2 by the film forming gas supply system in the film forming chamber S2, and a control unit Cnt. Here, the control unit Cnt causes the antenna 14 and the high-frequency power source 72 to generate a film forming gas plasma in a state where the dummy substrate is mounted on the mounting table 36, thereby causing the plasma generating chamber S1 and the film forming chamber S2 to generate plasma. On the other hand, pre-coating is performed. Then, the control unit Cnt generates a rare gas plasma on the antenna 14 in a state where the substrate W is mounted on the mounting table 36 in the film forming chamber S2 where the pre-coating process is performed. A film forming process is performed on the substrate W using neutral particles supplied to the film forming chamber S2 through the plurality of openings 40h. As a result, it is possible to suppress contamination of the substrate W due to foreign matter generated in the film formation chamber S2.

  Here, in the conventional film forming apparatus that performs the pre-coating process only on the plasma generating chamber, the film forming gas is generated from the film forming gas when the film forming process is performed on the substrate placed on the mounting table. The activated species may damage the inner wall of the film forming chamber and generate foreign substances such as metal. That is, in the conventional film forming apparatus, there is a possibility that the substrate is contaminated by the foreign matter generated in the film forming chamber when the film forming process is performed. On the other hand, in the film forming apparatus 10 according to the embodiment, the film forming process is performed on the substrate W after performing the pre-coating process on the plasma generation chamber S1 and the film forming chamber S2. Damage to the inner wall of the chamber S2 is suppressed. As a result, according to one embodiment, it is possible to suppress contamination of the substrate W caused by foreign matter generated in the film forming chamber S2.

(Other embodiments)
As mentioned above, although embodiment of this invention was described with reference to drawings, this invention is not limited to the thing of embodiment shown in figure. Various modifications and variations may be made to the illustrated embodiment.

(Pre-coating sequence)
In the above-described embodiment, the example in which the pre-coating process is performed on the film formation chamber S2 after the pre-coating process is performed on the plasma generation chamber S1 has been described, but the disclosed technique is not limited thereto. For example, after the pre-coating process is performed on the film formation chamber S2, the pre-coating process may be performed on the plasma generation chamber S1. In this case, the control unit Cnt generates the plasma of the film forming gas in the high frequency power source 72, thereby generating the plasma of the film forming gas in the antenna 14 after performing the pre-coating process on the film forming chamber S2. Then, a pre-coating process is performed on the plasma generation chamber S1. Further, for example, the pre-coating process may be performed on the plasma generation chamber S1 and the pre-coating process may be performed on the film forming chamber S2. In this case, the film forming gas plasma is generated in the antenna 14 to perform the pre-coating process on the plasma generation chamber S1, and at the same time, the film forming gas plasma is generated in the high-frequency power source 72, thereby forming the film forming chamber S2. A pre-coating treatment is performed.

(Cleaning process order)
In the above-described embodiment, the example in which the cleaning process is performed on the film formation chamber S2 after the cleaning process is performed on the plasma generation chamber S1 has been described. However, the disclosed technique is not limited thereto. Absent. For example, after the cleaning process is performed on the film formation chamber S2, the cleaning process may be performed on the plasma generation chamber S1. In this case, the control unit Cnt generates the cleaning gas plasma in the high-frequency power source 72, thereby performing the cleaning process on the film forming chamber S2, and then generating the film forming gas plasma in the antenna 14. A cleaning process is performed on the plasma generation chamber S1. Further, for example, the cleaning process may be performed on the film forming chamber S2 simultaneously with the cleaning process on the plasma generation chamber S1. In this case, the cleaning gas plasma is generated in the antenna 14 to perform the cleaning process on the plasma generation chamber S1, and at the same time, the cleaning gas plasma is generated in the high-frequency power source 72 to generate the cleaning gas plasma in the film forming chamber S2. Cleaning process.

(Frequency of pre-coating process and cleaning process performed for film formation chamber)
In the above-described embodiment, the example in which the cleaning process and the precoat process are performed on the film forming chamber S2 each time the film forming process is performed on one substrate W has been described. It is not limited to. For example, every time a film formation process is performed on two or more substrates W, a precoat process may be performed on the film formation chamber S2. Further, for example, the cleaning process may be performed on the film forming chamber S2 every time the film forming process is performed on two or more substrates W. That is, the precoat process or the cleaning process for the film forming chamber S2 may be omitted as necessary. Hereinafter, an example in which the cleaning process and the precoating process are performed on the film forming chamber S2 each time the film forming process is performed on two substrates will be described with reference to FIG.

  FIG. 4 is a flowchart illustrating another example of the processing flow of the film forming method using the film forming apparatus according to the embodiment. In FIG. 4, steps S121 to S129 are the same as steps S101 to S109 shown in FIG.

  As shown in FIG. 4, when the substrate W on which the film formation process has been performed is carried out of the processing container 12 (step S129), a dummy substrate is carried into the processing container 12 (step S130), and the mounting table 36 is placed. Placed on the top. Subsequently, the film forming apparatus 10 performs a cleaning process on the plasma generation chamber S1 (step S131). That is, the control unit Cnt of the film forming apparatus 10 performs a cleaning process on the plasma generation chamber S1 by generating a cleaning gas plasma in the antenna 14 in a state where the dummy substrate is mounted on the mounting table 36. . Note that the cleaning process by the control unit Cnt is the same as that in step S102 shown in FIG. 3, and a detailed description thereof will be omitted here.

  Subsequently, the film forming apparatus 10 performs a precoat process on the plasma generation chamber S1 (step S132). That is, the control unit Cnt of the control device 10 performs the pre-coating process on the plasma generation chamber S1 by generating plasma of the film forming gas on the antenna 14 in a state where the dummy substrate is mounted on the mounting table 36. . Note that the pre-coating process by the control unit Cnt is the same as that in step S104 shown in FIG. 3, and thus detailed description thereof is omitted here.

  Thereafter, the dummy substrate is separated from the mounting table 36 and carried out of the processing container 12 (step S133). Subsequently, the substrate W is carried into the processing container 12 (step S134) and placed on the placement table 36.

  Subsequently, the film forming apparatus 10 performs a film forming process on the substrate W (step S135). That is, the control unit Cnt of the film forming apparatus 10 generates a rare gas plasma in the antenna 14 in a state where the substrate W is mounted on the mounting table 36 in the film forming chamber S2 where the pre-coating process has been performed. Then, a film forming process is performed on the substrate W using neutral particles supplied to the film forming chamber S <b> 2 through the plurality of openings 40 h of the partition plate 40. Note that the film forming process by the control unit Cnt is the same as step S108 shown in FIG. 3, and thus detailed description thereof is omitted here.

  Thereafter, the substrate W is separated from the mounting table 36 and carried out of the processing container 12 (step S136). Then, when the process is continued (Step S137; No), the film forming apparatus 10 returns the process to Step S121, and when the process is terminated (Step S137; Yes), the process is terminated.

  In this way, the film forming apparatus 10 performs the cleaning process and the precoat process on the film forming chamber S2 every time the film forming process is performed on the two substrates W. As a result, it is possible to improve the throughput of the substrate W on which the thin film is formed.

(High-frequency power supplier)
In the above-described embodiment, the example in which the high-frequency power source 72 generates plasma of the deposition gas in the deposition chamber S2 by supplying high-frequency power to the electrode 70 provided in the deposition chamber S2 has been described. The disclosed technique is not limited to this. For example, the high frequency power source 72 may supply high frequency power to the partition plate 40.

  FIG. 5 is a diagram showing an outline of Modification 1 of the film forming apparatus according to the embodiment. The film forming apparatus 10 according to the first modification basically has the same configuration as the film forming apparatus 10 shown in FIG. 1, and the supply destination of the high frequency power supplied from the high frequency power supply 72 is shown in FIG. Different from the film forming apparatus 10 shown. Therefore, the description of the same configuration as the film forming apparatus 10 shown in FIG. 1 is omitted.

  As shown in FIG. 5, in the film forming apparatus 10 of the first modification, the high frequency power source 72 is electrically connected to the partition plate 40. In this case, the film forming apparatus 10 of the first modification does not include the electrode 70. The high frequency power supply 72 supplies electromagnetic wave energy for exciting the film forming gas supplied from the film forming gas supply system to the film forming chamber S <b> 2 by supplying predetermined high frequency power to the partition plate 40. Thereby, the high frequency power source 72 generates plasma of the film forming gas supplied from the film forming gas supply system to the film forming chamber S2 in the film forming chamber S2.

  For example, the high frequency power supply 72 may supply high frequency power to the mounting table 36.

  FIG. 6 is a diagram illustrating an outline of Modification 2 of the film forming apparatus according to the embodiment. The film forming apparatus 10 according to the modified example 2 basically has the same configuration as the film forming apparatus 10 shown in FIG. 1, and the supply destination of the high frequency power supplied from the high frequency power supply 72 is shown in FIG. Different from the film forming apparatus 10 shown. Therefore, the description of the same configuration as the film forming apparatus 10 shown in FIG. 1 is omitted.

  As shown in FIG. 6, in the film forming apparatus 10 of Modification Example 2, the high frequency power source 72 is electrically connected to the mounting table 36. In this case, the film forming apparatus 10 of Modification 2 does not have the electrode 70. The high frequency power supply 72 supplies electromagnetic wave energy for exciting the film forming gas supplied from the film forming gas supply system to the film forming chamber S <b> 2 by supplying predetermined high frequency power to the mounting table 36. Thereby, the high frequency power source 72 generates plasma of the film forming gas supplied from the film forming gas supply system to the film forming chamber S2 in the film forming chamber S2.

(ICP)
In the above-described embodiment, the example in which the plasma of the deposition gas is generated in the plasma generation chamber S1 by radiating the microwave from the radial line slot antenna to the plasma generation chamber S1, but the disclosed technique is based on this. It is not limited. For example, a technique using ICP (Inductively Coupled Plasma) may be considered as a technique for generating a film forming gas plasma in the plasma generation chamber S1.

  FIG. 7 is a diagram illustrating an outline of Modification 3 of the film forming apparatus according to the embodiment. The film forming apparatus 10 according to the modified example 3 basically has the same configuration as the film forming apparatus 10 shown in FIG. 1, and is different from the film forming apparatus 10 shown in FIG. 1 in that ICP is used. . Therefore, the description of the same configuration as the film forming apparatus 10 shown in FIG. 1 is omitted.

  As shown in FIG. 7, the film forming apparatus 10 of Modification 3 has a coil antenna 80 arranged in a spiral shape instead of the antenna 14. In addition, the film forming apparatus 10 of Modification 3 further includes a switch 90. Further, in the film forming apparatus 10 according to the third modification, the high-frequency power source 72 is electrically connected to the mounting table 36 via the switch 90. In this case, the film forming apparatus 10 of Modification 3 does not have the electrode 70.

  The coil antenna 80 generates plasma of a deposition gas or a rare gas in the plasma generation chamber S1 by forming an induction electric field in the plasma generation chamber S1 when high frequency power is supplied from a switch 90 described later. Let The coil antenna 80 is an example of a first plasma source.

  The high frequency power supply 72 supplies electromagnetic wave energy for exciting the film forming gas supplied from the film forming gas supply system to the film forming chamber S2 by supplying predetermined high frequency power to the mounting table 36 via the switch 90. To do. Thereby, the high frequency power source 72 generates plasma of the film forming gas supplied from the film forming gas supply system to the film forming chamber S2 in the film forming chamber S2. The high frequency power source 72 is an example of a second plasma source.

  The switch 90 selectively supplies high-frequency power from the high-frequency power source 72 to either the mounting table 36 or the coil antenna 80. Selection of the supply destination of the high frequency power by the switch 90 is controlled by the control unit Cnt.

DESCRIPTION OF SYMBOLS 10 Film-forming apparatus 12 Processing container 14 Antenna 36 Mounting stand 40 Partition plate 40h Opening 70 Electrode 72 High frequency power supply G1-G3 Gas source S1 Plasma generation chamber S2 Film-forming chamber W Substrate

Claims (13)

A processing vessel;
A partition plate having a plurality of openings and partitioning the inside of the processing chamber into a plasma generation chamber and a film formation chamber;
A mounting table provided in the film forming chamber for mounting a substrate to be formed;
A first gas supply unit that supplies a film forming gas used for a film forming process to the film forming chamber;
A second gas supply unit for supplying a rare gas for plasma excitation to the plasma generation chamber;
In the plasma generation chamber, the film-forming gas plasma supplied to the film-forming chamber by the first gas supply unit and introduced from the film-forming chamber through the plurality of openings of the partition plate, or the second A first plasma source for generating a plasma of the rare gas supplied by the gas supply unit;
A second plasma source for generating plasma of the film forming gas supplied to the film forming chamber by the first gas supply unit in the film forming chamber;
In the state where the substrate other than the substrate is mounted on the mounting table, the plasma generation chamber is generated by generating plasma of the film forming gas in the first plasma source and the second plasma source. The noble gas plasma is applied to the first plasma source in a state where the film formation chamber is precoated and the substrate is placed on the mounting table in the film formation chamber where the precoat treatment is performed. And a controller that performs a film formation process on the substrate using neutral particles supplied to the film formation chamber through the plurality of openings of the partition plate. Deposition device. The first plasma source emits microwaves to the plasma generation chamber to generate plasma of the film forming gas or plasma of the rare gas in the plasma generation chamber,
The second plasma source generates a plasma of the deposition gas in the deposition chamber by supplying high-frequency power to an electrode provided in the deposition chamber, the partition plate, or the mounting table. The film forming apparatus according to claim 1. The first plasma source generates plasma of the film forming gas or plasma of the rare gas in the plasma generation chamber by forming an induction electric field in the plasma generation chamber when high-frequency power is supplied. Let
The second plasma source generates a plasma of the film forming gas in the film forming chamber by supplying high frequency power to an electrode provided in the film forming chamber, the partition plate or the mounting table.
The film forming apparatus includes a high-frequency power from the second plasma source for any one of an electrode provided in the film forming chamber, the partition plate or the mounting table, and the first plasma source. The film forming apparatus according to claim 1, further comprising: a switch that selectively supplies the film. A processing vessel;
A partition plate having a plurality of openings and partitioning the inside of the processing chamber into a plasma generation chamber and a film formation chamber;
A mounting table provided in the film forming chamber for mounting a substrate to be formed;
A first gas supply unit that supplies a film forming gas used for a film forming process to the film forming chamber;
A second gas supply unit for supplying a rare gas for plasma excitation to the plasma generation chamber;
In the plasma generation chamber, plasma of the film forming gas flowing from the film forming chamber through the plurality of openings of the partition plate or plasma of the rare gas supplied by the second gas supply unit is generated. A first plasma source;
In the film formation chamber, a film formation method using a film formation apparatus comprising: a second plasma source that generates plasma of the film formation gas supplied to the film formation chamber by the first gas supply unit. And
In the state where the substrate other than the substrate is mounted on the mounting table, the plasma generation chamber is generated by generating plasma of the film forming gas in the first plasma source and the second plasma source. Performing a precoat treatment on the film forming chamber;
The plurality of partition plates are generated by generating plasma of the rare gas in the first plasma source in a state where the substrate is mounted on the mounting table in the film formation chamber where the pre-coating process has been performed. Forming a film on the substrate using neutral particles supplied to the film formation chamber through the opening.   The step of performing a precoat process on the plasma generation chamber and the film formation chamber includes performing a precoat process on the film formation chamber after performing the precoat process on the plasma generation chamber. Item 5. The film forming method according to Item 4.   The step of performing a precoat process on the plasma generation chamber and the film formation chamber includes performing a precoat process on the plasma generation chamber after performing the precoat process on the film formation chamber. Item 5. The film forming method according to Item 4.   The step of performing a precoat process on the plasma generation chamber and the film formation chamber includes performing the precoat process on the plasma generation chamber and simultaneously performing the precoat process on the film formation chamber. Item 5. The film forming method according to Item 4.   The step of performing the pre-coating process on the plasma generation chamber and the film forming chamber includes performing the pre-coating process on the film forming chamber every time the film forming process is performed on two or more substrates. The film forming method according to claim 4, wherein: The film forming apparatus further includes a third gas supply unit that supplies a cleaning gas to the plasma generation chamber,
The first plasma source generates plasma of the cleaning gas supplied to the plasma generation chamber by the third gas supply unit in the plasma generation chamber,
In the film formation chamber, the second plasma source is supplied to the plasma generation chamber by the third gas supply unit and flows into the plasma generation chamber through the openings of the partition plate. Generating plasma,
The film forming method includes the first plasma source and the first plasma source in a state where the other substrate is mounted on the mounting table before the step of performing a pre-coating process on the plasma generating chamber and the film forming chamber. 9. The method according to claim 4, further comprising: performing a cleaning process on the plasma generation chamber and the film formation chamber by generating plasma of the cleaning gas in the second plasma source. The film-forming method as described in any one.   The step of performing a cleaning process on the plasma generation chamber and the film formation chamber includes performing a cleaning process on the film formation chamber after performing the cleaning process on the plasma generation chamber. Item 12. The film forming method according to Item 9.   The step of performing a cleaning process on the plasma generation chamber and the film formation chamber includes performing a cleaning process on the plasma generation chamber after performing the cleaning process on the film formation chamber. Item 12. The film forming method according to Item 9.   The step of performing a cleaning process on the plasma generation chamber and the film formation chamber includes performing a cleaning process on the plasma generation chamber and simultaneously performing a cleaning process on the film formation chamber. Item 12. The film forming method according to Item 9.   The step of performing the cleaning process on the plasma generation chamber and the film forming chamber includes performing the cleaning process on the film forming chamber every time the film forming process is performed on two or more substrates. The film forming method according to any one of claims 9 to 12.

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