KR20220041167A - 기판 처리 장치, 플라스마 생성 장치, 반도체 장치의 제조 방법, 플라즈마 생성 방법 및 프로그램 - Google Patents

기판 처리 장치, 플라스마 생성 장치, 반도체 장치의 제조 방법, 플라즈마 생성 방법 및 프로그램 Download PDF

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Publication number
KR20220041167A
KR20220041167A KR1020227006535A KR20227006535A KR20220041167A KR 20220041167 A KR20220041167 A KR 20220041167A KR 1020227006535 A KR1020227006535 A KR 1020227006535A KR 20227006535 A KR20227006535 A KR 20227006535A KR 20220041167 A KR20220041167 A KR 20220041167A
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KR
South Korea
Prior art keywords
gas
electrode
substrate
film
rod
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KR1020227006535A
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English (en)
Korean (ko)
Inventor
츠요시 다케다
다이스케 하라
Original Assignee
가부시키가이샤 코쿠사이 엘렉트릭
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Publication of KR20220041167A publication Critical patent/KR20220041167A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020227006535A 2019-09-02 2019-09-02 기판 처리 장치, 플라스마 생성 장치, 반도체 장치의 제조 방법, 플라즈마 생성 방법 및 프로그램 KR20220041167A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/034502 WO2021044504A1 (ja) 2019-09-02 2019-09-02 基板処理装置、プラズマ生成装置、半導体装置の製造方法およびプログラム

Publications (1)

Publication Number Publication Date
KR20220041167A true KR20220041167A (ko) 2022-03-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227006535A KR20220041167A (ko) 2019-09-02 2019-09-02 기판 처리 장치, 플라스마 생성 장치, 반도체 장치의 제조 방법, 플라즈마 생성 방법 및 프로그램

Country Status (6)

Country Link
US (2) US11804365B2 (zh)
JP (2) JP7342138B2 (zh)
KR (1) KR20220041167A (zh)
CN (1) CN114342047A (zh)
TW (1) TW202118894A (zh)
WO (1) WO2021044504A1 (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015092637A (ja) 2015-02-12 2015-05-14 株式会社日立国際電気 基板処理装置および半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001059527A (ja) 1999-08-20 2001-03-06 Nok Corp 自在継手用ブーツ
WO2006077735A1 (ja) * 2004-12-28 2006-07-27 Hitachi Kokusai Electric Inc. 基板処理装置
US8240271B2 (en) * 2005-11-10 2012-08-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US8555808B2 (en) * 2006-05-01 2013-10-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP2010129666A (ja) * 2008-11-26 2010-06-10 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP5136574B2 (ja) * 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5824544B2 (ja) * 2009-05-29 2015-11-25 株式会社日立国際電気 基板処理装置、基板処理方法および半導体装置の製造方法
JP5743488B2 (ja) * 2010-10-26 2015-07-01 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP6030378B2 (ja) * 2012-08-14 2016-11-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5939147B2 (ja) 2012-12-14 2016-06-22 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
JP6195528B2 (ja) * 2014-02-19 2017-09-13 東京エレクトロン株式会社 プラズマ処理装置及びその運転方法
JP6307316B2 (ja) 2014-03-19 2018-04-04 株式会社日立国際電気 基板処理装置、及び半導体装置の製造方法
JP6515665B2 (ja) * 2015-05-07 2019-05-22 東京エレクトロン株式会社 基板処理装置
CN109314054A (zh) * 2016-07-21 2019-02-05 株式会社国际电气 等离子体生成装置、衬底处理装置及半导体器件的制造方法
JP6567489B2 (ja) * 2016-12-27 2019-08-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015092637A (ja) 2015-02-12 2015-05-14 株式会社日立国際電気 基板処理装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US20220181125A1 (en) 2022-06-09
US11804365B2 (en) 2023-10-31
US20240055237A1 (en) 2024-02-15
JP2023165711A (ja) 2023-11-17
TW202118894A (zh) 2021-05-16
CN114342047A (zh) 2022-04-12
JP7342138B2 (ja) 2023-09-11
WO2021044504A1 (ja) 2021-03-11
JPWO2021044504A1 (zh) 2021-03-11

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