KR20220035919A - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

Info

Publication number
KR20220035919A
KR20220035919A KR1020227003652A KR20227003652A KR20220035919A KR 20220035919 A KR20220035919 A KR 20220035919A KR 1020227003652 A KR1020227003652 A KR 1020227003652A KR 20227003652 A KR20227003652 A KR 20227003652A KR 20220035919 A KR20220035919 A KR 20220035919A
Authority
KR
South Korea
Prior art keywords
devices
imaging
electronic
electronic devices
imaging devices
Prior art date
Application number
KR1020227003652A
Other languages
English (en)
Inventor
세이이치 요네다
유스케 네고로
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20220035919A publication Critical patent/KR20220035919A/ko

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/63—Control of cameras or camera modules by using electronic viewfinders
    • H04N23/631—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
KR1020227003652A 2019-07-19 2020-07-09 촬상 장치 및 전자 기기 KR20220035919A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019133327 2019-07-19
JP2019137548 2019-07-26
PCT/IB2020/056448 WO2021014258A1 (ja) 2019-07-19 2020-07-09 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
KR20220035919A true KR20220035919A (ko) 2022-03-22

Family

ID=74192913

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227003652A KR20220035919A (ko) 2019-07-19 2020-07-09 촬상 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US20220321794A1 (ko)
JP (1) JPWO2021014258A1 (ko)
KR (1) KR20220035919A (ko)
CN (1) CN114026692A (ko)
WO (1) WO2021014258A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220003568A (ko) * 2019-04-29 2022-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 그 동작 방법, 및 전자 기기
WO2021044762A1 (ja) * 2019-09-04 2021-03-11 パナソニックＩｐマネジメント株式会社 撮像装置
WO2021130590A1 (ja) * 2019-12-27 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、および電子機器
US11500614B2 (en) 2020-05-11 2022-11-15 International Business Machines Corporation Stacked FET multiply and accumulate integrated circuit
US11800698B2 (en) 2021-08-17 2023-10-24 International Business Machines Corporation Semiconductor structure with embedded capacitor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP2018117027A (ja) 2017-01-18 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子装置、および、固体撮像素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112018002719T5 (de) * 2017-05-26 2020-02-13 Semiconductor Energy Laboratory Co., Ltd. Abbildungsvorrichtung und elektronisches Gerät
CN117577652A (zh) * 2017-06-02 2024-02-20 索尼半导体解决方案公司 固态摄像装置和电子设备
US11195866B2 (en) * 2017-06-08 2021-12-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device including photoelectic conversion element and transistor
US10560646B2 (en) * 2018-04-19 2020-02-11 Teledyne Scientific & Imaging, Llc Global-shutter vertically integrated pixel with high dynamic range

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP2018117027A (ja) 2017-01-18 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子装置、および、固体撮像素子の製造方法

Also Published As

Publication number Publication date
CN114026692A (zh) 2022-02-08
JPWO2021014258A1 (ko) 2021-01-28
US20220321794A1 (en) 2022-10-06
WO2021014258A1 (ja) 2021-01-28

Similar Documents

Publication Publication Date Title
CA186171S (en) Electronic device
EP3716618A4 (en) SOLID IMAGING ELEMENT AND ELECTRONIC DEVICE
CA186172S (en) Electronic device
JP1631531S (ja) 電子計算機
EP3709359A4 (en) SEMICONDUCTOR IMAGING DEVICE AND ELECTRONIC DEVICE
EP3920521C0 (en) CAMERA ARRANGEMENT AND ELECTRONIC DEVICE
KR20220035919A (ko) 촬상 장치 및 전자 기기
EP3696522A4 (en) SOLID IMAGING ELEMENT AND ELECTRONIC DEVICE
EP4008918C0 (en) ELECTRONIC DEVICE AND FOLDABLE ASSEMBLY
KR20220035487A (ko) 카메라 모듈 및 전자기기
EP3605607A4 (en) IMAGING ELEMENT AND ELECTRONIC DEVICE
EP3796386A4 (en) IMAGING ELEMENT AND ELECTRONIC DEVICE
EP3748958A4 (en) IMAGING ELEMENT AND ELECTRONIC DEVICE
EP3722921A4 (en) IMAGING ARRANGEMENT AND ELECTRONIC DEVICE
EP3739630A4 (en) SOLID STATE IMAGING DEVICE AND ELECTRONIC DEVICE
JP2017130655A5 (ja) 半導体装置及び電子機器
EP3648454A4 (en) SOLID IMAGING DEVICE AND ELECTRONIC EQUIPMENT
EP3617765A4 (en) IMAGING DEVICE AND ELECTRONIC EQUIPMENT
EP3968377A4 (en) IMAGING ELEMENT AND ELECTRONICS
EP3896966A4 (en) SOLID STATE IMAGING DEVICE AND ELECTRONIC INSTRUMENT
EP3736627C0 (en) ELECTRONIC DEVICE WITH CAMERA
GB202005462D0 (en) Imaging component and imaging device
DK3343954T3 (da) Høreanordning indbefattende en udvendig antennedel og en indvendig antennedel
EP3869563A4 (en) IMAGING ELEMENT AND ELECTRONIC EQUIPMENT
DK3562139T3 (da) Elektronisk anordning og kameraenhed derpå