KR20220020961A - Methods and apparatus for post-exposure processing - Google Patents

Abstract

Embodiments described herein relate to methods and apparatus for post-exposure processing. More particularly, embodiments described herein relate to immersion field-guided post exposure bake (iFGPEB) chambers and processes. In one embodiment, the substrate is transferred into the process chamber after exposure and then raised to the pre-processing position by a plurality of lift pins. The substrate support is then raised to engage the substrate and vacuum chuck the substrate onto the substrate support prior to iFGPEB processing.

Description

Methods and apparatus for post-exposure processing

[0001] Embodiments of the present disclosure relate to methods and apparatus for processing a substrate, and more particularly, to methods and apparatus for improving photolithography processes.

BACKGROUND Integrated circuits have evolved into complex devices that can include millions of components (eg, transistors, capacitors, and resistors) on a single chip. Photolithography is a process that can be used to form components on a chip. In general, the process of photolithography involves several stages. Initially, a photoresist layer is formed on a substrate. The chemically amplified photoresist may include a resist resin and a photoacid generator. The photoacid generator, upon exposure to electromagnetic radiation in a subsequent exposure stage, alters the solubility of the photoresist in the development process. The electromagnetic radiation may have any suitable wavelength, such as a 193 nm ArF laser, electron beam, ion beam, or other suitable source. Excess solvent may then be removed in the pre-exposure bake process.

[0003] In the exposure stage, a photomask or reticle may be used to selectively expose certain regions of the substrate to electromagnetic radiation. Other exposure methods may be maskless exposure methods. Exposure to light can decompose the photoacid generator, which creates an acid and results in a latent acid image on the resist resin. After exposure, the substrate may be heated in a post-exposure bake process. During the post-exposure baking process, the acid produced by the photoacid generator reacts with the resist resin of the photoresist layer, changing the solubility of the resist in the photoresist layer during the subsequent development process.

[0004] After the post-exposure bake, the substrate and in particular the photoresist layer may be developed and rinsed. Depending on the type of photoresist used, areas of the substrate that have been exposed to electromagnetic radiation may be resistant to removal or more likely to be removed. After development and rinsing, the pattern of the mask is transferred to the substrate using a wet or dry etching process.

[0005] The evolution of chip design requires faster circuitry and greater circuit density. Consequently, the demands for greater circuit density necessitate reduction of dimensions of integrated circuit components. As the dimensions of integrated circuit components decrease, more elements are placed in a given area on a semiconductor integrated circuit. Thus, lithographic processes are used to transfer much smaller features onto a substrate to accommodate the reduced dimensions of integrated circuit components.

Precise and accurate lithography is highly dependent on the resolution of the photoresist layer disposed on the substrate to be patterned. In a recent development, an electrode assembly is used to provide an electric field to a photoresist layer disposed on a substrate before or after an exposure process to modify the chemical properties of desired portions of the photoresist layer for improved exposure/development resolution. do. However, difficulties in implementing such systems have not been overcome.

[0007] Accordingly, there is a need for improved methods and apparatus for an improved immersion field guided post exposure baking process.

[0008] The present disclosure relates generally to methods and apparatus for immersion field guided exposure post-baking processes. In one embodiment, a method includes positioning a substrate on a plurality of lift pins in a first volume and moving the lift pins to a first position. The substrate support is moved to a first position to engage the substrate and then to a second position adjacent a second volume defined in part by the substrate and the electrode. A process fluid is introduced into the second volume, and an electric field is created between the electrode and the substrate.

In one embodiment, a method includes positioning a substrate on a plurality of lift pins within a first volume of a process chamber. The substrate is moved to a pre-processing position adjacent the ceiling of the process chamber, wherein the substrate support is moved to the pre-processing position to contact the substrate. The substrate is vacuum chucked to the substrate support, and the substrate support is moved to a processing position to form a second volume in the process chamber. A process fluid is introduced into the second volume, and an electric field is created in the second volume.

In one embodiment, a method includes positioning a substrate on a plurality of lift pins disposed at a first position within a first volume of a process chamber, and moving the plurality of lift pins to a second position. include The substrate support is moved to a second position to contact the substrate and vacuum chuck the substrate. The substrate support having the substrate chucked thereon is moved to a third position within the first volume, and disposition of the substrate support in the third position defines a second volume within the process chamber defined in part by the substrate. A process fluid is introduced into the second volume, and an electric field is created in the second volume.

In such a way that the above-mentioned features of the present disclosure may be understood in detail, a more specific description of the disclosure briefly summarized above may be made with reference to embodiments, some of which are attached illustrated in the drawings. It is to be noted, however, that the appended drawings illustrate exemplary embodiments only, and therefore should not be regarded as limiting the scope of the present disclosure, but may admit to other equally effective embodiments.
1 illustrates operations of a method for processing substrates, in accordance with embodiments described herein;
FIG. 2 illustrates a process chamber in a first stage of the method of FIG. 1 , in accordance with embodiments described herein;
3 illustrates the process chamber of FIG. 2 in a second stage of the method of FIG. 1 , in accordance with embodiments described herein;
FIG. 4 illustrates the process chamber of FIG. 2 in a third stage of the method of FIG. 1 , in accordance with embodiments described herein;
FIG. 5 illustrates the process chamber of FIG. 2 in a fourth stage of the method of FIG. 1 , in accordance with embodiments described herein;
To facilitate understanding, the same reference numbers have been used where possible to designate like elements that are common to the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

Embodiments described herein relate to methods and apparatus for post-exposure processing. More particularly, embodiments described herein relate to immersion field-guided post exposure bake (iFGPEB) chambers and processes. In one embodiment, the substrate is transferred into the process chamber after exposure and then raised to the pre-processing position by a plurality of lift pins. The substrate support is then raised to engage the substrate and vacuum chuck the substrate onto the substrate support prior to iFGPEB processing.

1 illustrates operations of an exemplary method 100 for processing substrates, in accordance with embodiments described herein. 2-5 illustrate schematic cross-sectional views of a substrate 201 in a process chamber 200 at different stages of the method 100 . Accordingly, references to FIGS. 2-5 will be included in the discussion of FIG. 1 and method 100 if necessary. The method 100 for processing of a substrate 201 has a number of operations. The actions may be performed in any order or concurrently (unless the context excludes the possibility), and the method 100 may be performed before any of the defined actions, between two of the defined actions. , or one or more other actions performed after all defined actions (except where the context precludes the possibility). Not all embodiments include all described operations.

Generally, the method 100 at operation 110 includes positioning a substrate 201 on a plurality of lift pins 266 disposed at a transfer position 270 within a process chamber 200 and heating the substrate support 208 to a desired temperature. In operation 120 , the substrate 201 positioned on the lift pins 266 is raised to the pre-processing position 272 while the substrate support 208 remains stationary. Subsequently, in operation 130 , the substrate support 208 is raised to engage the substrate 201 in the pre-processing position 272 . In operation 140 , the substrate support 208 is further raised to a processing position 274 , after which the substrate 201 is processed in operation 150 .

2 illustrates the process chamber 200 in operation 110 . In one embodiment, the process chamber 200 is configured to perform immersion field guided post exposure bake (iFGPEB) processes. As shown in FIG. 2 , the chamber 200 includes a chamber body 202 having a bottom 206 and sidewalls 204 that at least partially define a volume 203 . A slit valve 205 sized to accommodate passage of the substrate 201 through the slit valve 205 is disposed on the sidewalls 204 . In one embodiment, the chamber body 202 has a substantially cylindrical shape. In another embodiment, the chamber body 202 has a polygonal shape, such as a cubic shape. The chamber body 202 is made of a material suitable for maintaining the vacuum pressure therein, such as metallic materials. For example, the chamber body 202 is made of aluminum, stainless steel, and alloys and combinations thereof. Alternatively, the chamber body 202 is made of polymeric materials such as polytetrafluoroethylene (PTFE) or high temperature plastics such as polyether ether ketone (PEEK).

A ceiling 210 is coupled to the chamber body 202 and further defines a volume 203 . In one embodiment, the ceiling 210 is made of a metallic material such as aluminum, stainless steel, and alloys and combinations thereof. In another embodiment, the ceiling 210 is made of a polymer material such as PTFE, PEEK, or the like. Ceiling 210 may be formed from the same materials used to fabricate chamber body 202 . Alternatively, the ceiling 210 may be formed of different materials than the chamber body 202 .

Ceiling 210 is coupled to and supports electrode 212 . In one embodiment, electrode 212 is removably coupled to ceiling 210 . In another embodiment, electrode 212 is fixedly coupled to ceiling 210 . Electrode 212 may be formed of an electrically conductive metallic material. Additionally, the material used for electrode 212 may be a non-oxidizing material. The materials selected for electrode 212 provide desirable current uniformity and low resistance across the surface of electrode 212 . A first o-ring 214 is further coupled to the electrode 212 along the outer diameter of the electrode 212 . A first o-ring 214 is also disposed in contact with a sidewall 216 of the ceiling 210 . The first o-ring 214 is configured to prevent process fluid from flowing behind the electrode 212 during processing.

A heat source 218 , a temperature sensing device 220 , a power source 222 , and a sensing device 224 are coupled to the electrode 212 . Heat source 218 provides power to one or more heating elements (not shown) disposed within electrode 212 , such as resistive heaters. The heat source 218 is configured to facilitate preheating of the process fluid during iFGPEB processes. The heat source 218 may also be used to maintain a desired temperature of the process fluid during substrate processing in addition to or separate from preheating the process fluid. In one implementation, the heat source 218 is configured to heat the electrode 212 to a temperature between about 70°C and about 150°C, such as between about 90°C and about 130°C. For example, the heat source 218 is configured to heat the electrode 212 to a temperature between about 100° C. and about 120° C., such as about 110° C.

A temperature sensing device 220 , such as a thermocouple, or the like, is communicatively coupled to the heat source 218 to provide temperature monitoring and facilitate heating of the electrode 212 . The power source 222 is configured to supply, for example, between about 0 W and about 100 W, such as between about 25 W and about 75 W, to the electrode 212 . Depending on the type of process fluid used, the current generated by the power source 222 can be on the order of tens of nano-amps to hundreds of milliamps. In one embodiment, the power source 222 is configured to generate electric fields in a range from about 0 V/mm to about 2000 V/mm. For example, the power source 222 may generate electric fields in a range from about 100 V/mm to about 1800 V/mm, such as from about 500 V/mm to about 1200 V/mm, such as from about 800 V/mm to about 1000 V/mm. configured to create In some embodiments, the power source 222 is configured to operate in either voltage controlled or current controlled modes. In both modes, the power source 222 may output AC, DC and/or pulsed DC waveforms. If desired, a square wave or a sine wave can be used. The power source 222 may be configured to provide power at a frequency between about 0.1 Hz and about 1 kHz, such as between about 100 Hz and about 750 Hz, such as between about 250 Hz and about 500 Hz. The duty cycle of pulsed DC power or AC power may be from about 5% to about 95%, such as from about 25% to about 75%.

[0026] The rise and fall times of pulsed DC power or AC power may be from about 1 nanosecond to about 1 millisecond, such as from about 100 nanoseconds to about 1 microsecond. A sensing device 224 , such as a voltmeter, or the like, is communicatively coupled to a power source 222 to provide electrical feedback and facilitate control of power applied to the electrode 212 . The sensing device 224 may also be configured to sense a current applied to the electrode 212 via the power source 222 .

A first plurality of fluid ports 226 are formed in the ceiling 210 through the sidewall 216 . A second plurality of fluid ports 228 are also formed in the sidewall 216 opposite the first plurality of fluid ports 226 . A first plurality of fluid ports 226 are in fluid communication with a process fluid source 232 via a first conduit 234 . A second plurality of fluid ports 228 are in fluid communication with the fluid outlet 236 through a second conduit 238 . The process fluid source 232 , alone or in combination with other devices, preheats the process fluid to a temperature between about 70° C. and about 150° C., such as between about 80° C. and about 140° C. prior to processing of the substrate 201 and during the iFGPEB process. configured to deliver a fluid. For example, the process fluids are heated to a temperature of about 100°C to about 120°C, such as about 110°C.

In one embodiment, the purge gas source 250 is also in fluid communication with the first plurality of fluid ports 226 via the first conduit 234 . The gases provided by the purge gas source 250 purge one or more of nitrogen, hydrogen, inert gases, etc. to purge the process volume 290 (shown in FIG. 5 ) before, during, or after iFGPEB processing. may include If desired, purge gases may be evacuated from process volume 290 via fluid outlet 236 .

A substrate support 208 is disposed in the volume 203 . In one embodiment, the substrate support 208 is coupled to a shaft 244 disposed through an opening 240 in the bottom 206 of the chamber body 202 . The substrate support 208 is raised and lowered within the volume 203 by an actuator assembly 246 coupled to a shaft 244 . In some embodiments, the substrate support 208 is further rotatable about a central axis of the substrate support 208 .

A vacuum chuck 242 is coupled to the substrate support 208 . The vacuum chuck 242 may be formed of a non-metallic material or other insulating material, such as a ceramic material, or the like. Additionally, vacuum chuck 242 may be formed of a non-oxidizing material to substantially reduce or prevent the possibility of substrate oxidation through reaction of vacuum chuck 242 with a process fluid. Similar to electrode 212 , the materials used for vacuum chuck 242 provide desirable current uniformity during processing of substrate 201 . Specifically, the materials used for the vacuum chuck 242 are selected to have a negligible effect on the electric field generated in the process chamber 200 during processing.

The vacuum chuck 242 is configured to support the substrate 201 thereon during processing and has a planar support surface 242A. Support surface 242A is sized to accommodate attachment of substrate 201 thereon and for positioning adjacent ceiling 210 . A vacuum source 258 is in fluid communication with the substrate support surface 242A. In general, the vacuum source 258 is coupled to the vacuum chuck 242 via a substrate support 208 . The vacuum source 258 is configured to vacuum chuck the substrate 201 to the support surface 242A of the vacuum chuck 242 during processing.

Similar to electrode 212 , vacuum chuck 242 is coupled to heat source 248 , temperature sensing device 252 , and power source 254 . Heat source 248 , temperature sensing device 252 , power source 254 , and sensing device 256 include heat source 218 , temperature sensing device 220 , power source 222 , and sensing device 224 . ) can function similarly. For example, heat source 248 provides power to one or more heating elements disposed within vacuum chuck 242 , such as resistive heaters or ceramic heaters. Generally, heat source 248 is configured to heat vacuum chuck 242 to facilitate heating of substrate 201 and/or process fluid during iFGPEB processes. In one embodiment, the heat source 248 is configured to heat the vacuum chuck 242 to a temperature of from about 75°C to about 150°C, such as from about 100°C to about 125°C, such as from about 110°C to about 120°C. A temperature sensing device 252 , such as a thermocouple, or the like, is communicatively coupled to a heat source 248 to provide temperature monitoring and facilitate heating of the vacuum chuck 242 .

In one embodiment, the second o-ring 280 is disposed on the vacuum chuck 242 on the substrate support surface 242A. The second o-ring 280 is to be positioned on the vacuum chuck 242 at a distance of about 1 mm to about 12 mm radially inward from the outer diameter of the substrate 201 when disposed on the vacuum chuck 242 . can For example, the second o-ring 280 may be positioned on the vacuum chuck 242 at a distance of about 2 mm to about 10 mm, such as about 4 mm to about 8 mm, radially inward from the outer diameter of the substrate 201 . can It is contemplated that the second o-ring 280 may prevent leakage of process fluid from the process volume 290 to a region behind the substrate 201 during processing.

The vacuum chuck 242 is disposed radially outward of the second o-ring 280 and couples the substrate support surface 242A to the upper surface 242B of the vacuum chuck 242 , a ledge ) (282). Top surface 242B is disposed below ledge 282 and substrate support surface 242A and radially outward. In one embodiment, a third o-ring 284 is disposed on the vacuum chuck 242 on the upper surface 242B. The first lower surface 215 of the ceiling 210 is shaped and sized to contact an edge region of the substrate 201 when the substrate support 208 is in the processing position 274 . The second lower surface 217 of the ceiling 210 is shaped and sized to contact the vacuum chuck 242 adjacent to and extending radially inward from the outer diameter of the substrate support surface 242A. The third lower surface 219 of the ceiling 210 is shaped and sized to contact the upper surface 242B. In one embodiment, when the substrate support 208 is placed in the processing position 274 , the third o-ring 284 contacts the third lower surface 219 . It is contemplated that the third o-ring 284 may prevent leakage of process fluid from the process volume 290 beyond the outer diameter of the vacuum chuck 242 during processing.

Each of the substrate support 208 and the vacuum chuck 242 includes a plurality of lift pin holes 262 and 264, respectively. The plurality of lift pin holes 262 are aligned with the plurality of lift pin holes 264 . The plurality of lift pins 266 is movably disposed through the plurality of holes 241 in the chamber bottom 206 as well as the plurality of lift pin holes 262 , 264 . A plurality of lift pins 266 extend to the chamber bottom 206 between the transport position 270 , the pre-processing position 272 (shown in FIG. 3 ), and the processing position 274 (shown in FIG. 5 ). , the substrate support 208 , and a lift pin actuator 268 that displaces the lift pins 266 via a vacuum chuck 242 .

In operation 110 , the substrate 201 is transferred into the volume 203 through the slit valve 205 by a robot blade or other suitable transfer device (not shown), and a plurality of lift pins 266 . positioned on the upper ends 267 of The upper ends 267 of the lift pins 266 are positioned in a transport position 270 that rises above the substrate support 208 but is slightly lower than the slit valve 205 . The substrate support 208 to which the vacuum chuck 242 is coupled is such that no contact is made between the substrate 201 and the substrate support surface 242A during operation 110 (eg, the chamber bottom 206 ). for) is positioned in the lowered position. In one example, the upper ends 267 of the lift pins 266 are disposed at a distance of about 10 mm to about 110 mm, such as about 30 mm to about 90 mm, from the substrate support surface 242A. In another example, the upper ends 267 of the lift pins 266 are disposed at a distance of about 50 mm to about 90 mm, such as about 60 mm to about 80 mm, from the substrate support surface 242A. Upon positioning the substrate 201 in the process chamber 200 , the vacuum chuck 242 is energized by the heat source 248 from about 75° C. to about 150° C., such as from about 100° C. to about 125° C., such as about 115 . heated to a temperature of °C.

In operation 120 and as shown in FIG. 3 , the substrate 201 disposed on the lift pins 266 is raised to the pre-processing position 272 . The lift pin actuator 268 raises the plurality of lift pins 266 from the transport position 270 to the pre-processing position 272 . In one embodiment, the substrate 201 is moved from the transfer position 270 to the pre-processing position 272 in a period of about 2 seconds to about 6 seconds, such as about 2 seconds to about 4 seconds, such as about 3 seconds. In one embodiment, the substrate 201 is placed in a pre-processing position 272 having a distance from the lower surface 213 of the electrode 212 of between about 1 mm and about 25 mm, such as between about 5 mm and about 20 mm. is raised to For example, the pre-processing position 272 has a distance of about 10 mm to about 15 mm, such as about 12 mm.

In operation 130 and as shown in FIG. 4 , the substrate support 208 is configured such that the substrate support surface 242A of the vacuum chuck 242 is greater than the top ends 267 of the lift pins 266 . It is raised to the pre-processing position 272 to be slightly higher or substantially coplanar with its top ends. Accordingly, the substrate support 208 engages the substrate 201 to support the substrate 201 on the substrate support 208 . The vacuum source 258 is then activated to vacuum chuck the substrate 201 to the support surface 242A of the vacuum chuck 242 . In one embodiment, the substrate support 208 is raised to the pre-processing position 272 and engages the substrate 201 with the substrate 201 for a period of about 2 seconds to about 5 seconds, such as about 2 seconds to about 4 seconds, such as about 3 seconds. interlock By avoiding contact between the substrate support 208 and the substrate 201 prior to operation 130 , the vacuum chuck 242 can be heated to a desired temperature without any direct heat transfer to the substrate 201 , The heating of 201 may be delayed to start substantially simultaneously with the application of the electric field during iFGPEB processing.

In operation 140 and as shown in FIG. 5 , after chucking the substrate 201 to the vacuum chuck 242 , the substrate support 208 is connected to the vacuum chuck 242 and the substrate 201 from the ceiling. It is raised to a processing position 274 in contact with 210 . For example, an edge region of the substrate 201 is in contact with the first lower surface 215 , an edge region of the substrate support surface 242A is in contact with the second lower surface 217 , and an upper surface 242B and a third The o-ring 284 contacts the third lower surface 219 . The placement of the substrate support 208 in the processing position 274 results in the formation of a processing volume 290 between the substrate 201 and the electrode 212 , the processing volume 290 being a first o-ring. 214 , a second o-ring 280 and a third o-ring 284 .

In one embodiment, the substrate support 208 is raised from the pre-processing position 272 to the processing position 274 in a period of about 0.1 seconds to about 2 seconds, such as about 0.5 seconds to about 1.5 seconds. For example, the substrate support 208 is raised from the pre-processing position 272 to the processing position 274 in a period of about 0.75 seconds to about 1.25 seconds, such as about 1 second. Accordingly, the total time required to move the substrate from the transfer position 270 to the processing position 274 may be between about 0.1 seconds and about 3 seconds, such as between about 0.5 seconds and about 2.5 seconds. For example, the total time required to move the substrate 201 from the transfer position 270 to the processing position 274 is from about 1 second to about 2 seconds, such as about 1.5 seconds.

In one embodiment, the process volume 290 has a height 292 defined between the substrate 201 and the lower surface 213 of the electrode 212 . In one example, the height 292 of the process volume 290 is between about 1 mm and about 10 mm, such as between about 2 mm and about 8 mm. For example, the height 292 of the process volume 290 is between about 4 mm and about 6 mm, such as about 5 mm. The relatively small distance between the substrate 201 and the electrode 212 reduces the volume of the process volume 290 , allowing the use of reduced amounts of process fluid during iFGPEB processing. Moreover, the reduced height 292 provides a substantially more uniform electric field across the surface of the substrate 201 , as a result of which patterning characteristics during iFGPEB processing can be improved. Additionally, the power required to generate the desired electric field and heat the process fluids during iFGPEB can be reduced.

After positioning the substrate support 208 at the processing position 274 and forming the process volume 290 , in an operation 150 , the substrate 201 is exposed to an iFGPEB process. During iFGPEB processing, process volume 290 is filled with a process fluid, such as a gas or liquid, having a flow path originating from a process fluid source 232 and traveling through a first conduit 234 . Process fluid exits the first conduit 234 into the process volume 290 through a first plurality of fluid ports 226 . The flow rate of the process fluid into the process volume 290 may be adjusted to reduce turbulence of the fluid in the process volume 290 and to reduce or eliminate the formation of bubbles in the process volume 290 . For example, the flow rate of process fluid into process volume 290 may be adjusted from 1 L/min to about 12 L/min, such as from about 5 L/min to about 10 L/min. The process fluid may also be preheated to processing temperatures prior to introduction into the process volume 290 . For example, the process fluid may be preheated by the process fluid source 232 to a temperature between about 70°C and about 170°C, such as between about 90°C and about 150°C. For example, the process fluid is heated to a temperature of about 110°C to about 130°C, such as about 120°C.

Once the process volume 290 is filled with the process fluid, an electric field is applied to the substrate 201 by the electrode 212 . In one embodiment, the electric field may be applied to the substrate 201 for an amount of time between about 10 seconds and about 90 seconds, such as between about 25 seconds and about 75 seconds, such as between about 40 seconds and about 60 seconds, such as about 50 seconds. . In some embodiments, the fluid disposed in process volume 290 is stagnant during processing of substrate 201 . In some embodiments, the fluid volume of process volume 290 is circulated or exchanged. In such embodiments, when process volume 290 is filled with process fluid through first conduit 234 and first fluid ports 226 , process fluid also flows through second fluid ports 228 and It exits the process volume 290 through a second conduit 238 and is ultimately removed from the process chamber 200 at a fluid outlet 236 . After application of the electric field, the process fluid may be withdrawn from the process volume 290 and the substrate support 208 with the processed substrate 201 chucked thereon may be lowered.

[0044] The methods and apparatus described above improve iFGPEB processing performance by reducing the amount of time a substrate is exposed to heat prior to application of an electric field. By engaging the substrate with the heated substrate support immediately prior to application of the electric field, undesired heat transfer between the heated substrate support and the substrate is minimized. Accordingly, random thermal diffusion of acids generated by the photo-acid generator in the photoresist may be substantially reduced, and thus, thermally-triggered de-protection of the photoresist may be reduced. Reducing the pre-processing deprotection of the photoresist enables improved development/exposure resolution of the photoresist by increasing the control of the diffusion of charged species generated by the photoacid generator, and consequently more of circuit features during lithography. It enables precise transmission.

[0045] In summary, apparatus and methods for improving iFGPEB processing are provided. The process chambers described herein enable efficient use of process fluid and improved application of an electric field during iFGPEB operations. Photoresist resolution is also improved by reducing the amount of time the substrate is exposed to elevated temperatures prior to application of the electric field, thus reducing the reaction of the photoresist species prior to iFGPEB processing. Accordingly, iFGPEB processing operations may be improved by using the apparatus and methods described herein.

[0046] Although the foregoing is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, the scope of which is to follow determined by the claims.

Claims (20)

A substrate processing method comprising:
positioning a substrate on a plurality of lift pins in a first volume, wherein the plurality of lift pins are disposed in a first position;
moving the plurality of lift pins with the substrate positioned thereon to a second position in the first volume;
moving a substrate support disposed in the first volume to the second position to engage the substrate;
moving the substrate support on which the substrate is engaged to a third position adjacent a second volume; and
processing the substrate within the second volume. According to claim 1,
The upper ends of the lift pins are disposed at a distance of about 10 mm to about 100 mm from the substrate support when in the first position. According to claim 1,
wherein the substrate support is heated to a temperature between about 75° C. and about 150° C. before being moved to the second position. 4. The method of claim 3,
wherein the substrate support is moved to the second position in a period of about 2 seconds to about 5 seconds after being heated. According to claim 1,
wherein the substrate support engages the substrate by vacuum chucking the substrate to an upper surface of the substrate support. According to claim 1,
wherein the substrate support is moved from the second position to the third position in a period of about 0.1 seconds to about 2 seconds. According to claim 1,
and a total time for moving the substrate from the first position to the third position is between about 0.1 seconds and about 3 seconds. According to claim 1,
Processing the substrate comprises:
introducing a process fluid into the second volume; and
and generating an electric field within the second volume. 9. The method of claim 8,
a height of the second volume is defined between the substrate and an electrode disposed in a ceiling of the process chamber when the substrate is placed in the third position. 10. The method of claim 9,
and the height of the second volume is between about 1 mm and about 10 mm. A substrate processing method comprising:
positioning the substrate on the plurality of lift pins within the first volume of the process chamber;
moving the substrate to a pre-processing position adjacent a ceiling of the process chamber;
moving a substrate support to the pre-processing position to contact the substrate;
vacuum chucking the substrate to the substrate support;
moving the substrate support to a processing position on which the substrate is vacuum chucked, wherein movement of the substrate support to the processing position results in formation of a second volume in the process chamber;
introducing a process fluid into the second volume; and
and generating an electric field within the second volume. 12. The method of claim 11,
wherein the upper ends of the lift pins are disposed at a transport position of about 30 mm to about 90 mm from the substrate support before moving to the pre-processing position. 13. The method of claim 12,
wherein the substrate support is moved from the pre-processing position to the processing position in a period of about 0.5 seconds to about 1.5 seconds. 14. The method of claim 13,
and the total time to move the substrate from the transport position to the processing position is between about 0.5 seconds and about 2.5 seconds. 12. The method of claim 11,
wherein the substrate support is heated to a temperature between about 100° C. and about 125° C. before being moved to the pre-processing position. 16. The method of claim 15,
wherein the substrate support is moved to the pre-processing position in a period of about 2 seconds to about 4 seconds after heating. 12. The method of claim 11,
wherein the second volume is defined in part by an electrode disposed in a ceiling of the process chamber and the substrate when the substrate is placed in the processing position. 18. The method of claim 17,
and the second volume is fluidly sealed by one or more o-rings disposed on the substrate support or the electrode. 19. The method of claim 18,
wherein the process fluid is introduced into the second volume at a flow rate between 1 L/min and 12 L/min. A substrate processing method comprising:
positioning the substrate on a plurality of lift pins disposed at a first position within a first volume of the process chamber;
moving the plurality of lift pins to a second position within the first volume of the process chamber;
moving a substrate support to the second position to contact the substrate and vacuum chuck the substrate;
moving the substrate support on which the substrate is chucked to a third position within the first volume of the process chamber, wherein disposition of the substrate support in the third position forms a second volume in the process chamber; , wherein the second volume is defined in part by the substrate;
introducing a process fluid into the second volume; and
and generating an electric field within the second volume.

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