KR20220014758A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing device and, more particularly, to a substrate processing device in which substrate processing is performed by high pressure and low pressure. The substrate processing device comprises: a gas utility that respectively enables a reaction space and protective space to exhaust gas so that a pressure transformation process including a process with high pressure higher than normal pressure and a process with low pressure lower than normal pressure may be performed on a plurality of substrates introduced into the reaction space.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which substrate processing is performed by high and low pressure.

The substrate processing apparatus processes a process for a substrate such as a wafer, and a reactor using a boat may be used for heat treatment of the substrate.

The reactor is configured such that a boat loaded with substrates in units of a predetermined number is lifted from the loading area for heat treatment, or the boat is lowered from the loading area to unload heat-treated wafers.

At this time, the reactor is configured to include a tube that accommodates the lifted boat and forms a reaction space blocked from the outside, and usually the tube is formed of a quartz material with good heat transfer properties in order to efficiently conduct a heat treatment process.

The above-described tube may be damaged when a large difference between the internal temperature and pressure from the external temperature and pressure occurs due to the characteristics of the material, and the damage to the tube lowers the reliability of the substrate processing apparatus itself, It may also act as a cause of lowering the process yield.

Therefore, the substrate processing apparatus needs to be designed to employ a technology capable of securing product reliability and improving process yield.

In addition, the substrate processing apparatus is used to form a thin film of a desired thickness on a substrate by supplying a source gas, a reaction gas, a carrier gas, and the like, and applying an appropriate temperature and pressure.

In the process of forming such a thin film, impurities inside the thin film or on the surface of the thin film may act as a cause of lowering the yield.

Therefore, it is required to develop a technology for pre-treating, processing during, and post-processing the above-mentioned impurities, and development of a substrate processing apparatus for effectively applying the developed technology is also required.

An object of the present invention is to maintain the pressure between the outer tube and the inner tube higher than the reaction space of the inner tube during the processing period for substrate processing in order to solve the above problems, so that even when the inner tube is damaged, An object of the present invention is to provide a substrate processing apparatus capable of limiting the extent of damage to the interior.

Another object of the present invention is to provide a substrate processing apparatus that implements independent gas supply and exhaust for a reaction space of an inner tube and a space between an inner tube and an outer tube in order to solve the above problems. .

The present invention was created to achieve the object of the present invention as described above, and the present invention comprises: an outer tube having a protective space therein and having a first inlet formed therein; an inner tube having a reaction space formed therein and a second inlet formed at a lower portion thereof, a portion of which is accommodated in the outer tube, and a portion formed with the second inlet protruding to the outside of the outer tube; an outer manifold supporting the lower portion of the outer tube and forming a first inner space connected to the protective space, and having an outer gas supply port and an outer gas exhaust port formed around a side wall; an inner manifold supporting a lower portion of the inner tube and forming a second inner space connected to the protective space, and having an inner gas supply port and an inner gas exhaust port formed around a side wall; A substrate including a gas utility for controlling pressures in the reaction space and the protective space so as to perform a pressure transformation process including a high-pressure process higher than normal pressure and a low-pressure process lower than normal pressure with respect to the plurality of substrates introduced into the reaction space As a processing device, the gas utility includes an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure of the protective space. an exhaust unit; an inner exhaust unit including an inner exhaust line connecting the inner gas exhaust port and an external exhaust device, and a second high pressure control unit installed on the inner exhaust line to control the pressure of the reaction space; Of the inner exhaust line, branched from the front end of the second high pressure control unit and connected to a vacuum pump connected to the external exhaust device, an inner pumping unit configured to pump the reaction space to control the pressure in the reaction space to a pressure lower than normal pressure Disclosed is a substrate processing apparatus.

The present invention comprises: an outer tube having a protective space therein and having a first inlet formed therein; an inner tube having a reaction space formed therein and a second inlet formed at a lower portion thereof, a portion of which is accommodated in the outer tube, and a portion formed with the second inlet protruding to the outside of the outer tube; an outer manifold supporting the lower portion of the outer tube and forming a first inner space connected to the protective space, and having an outer gas supply port and an outer gas exhaust port formed around a side wall; an inner manifold supporting a lower portion of the inner tube and forming a second inner space connected to the protective space, and having an inner gas supply port and an inner gas exhaust port formed around a side wall; A substrate including a gas utility for controlling pressures in the reaction space and the protective space so as to perform a pressure transformation process including a high-pressure process higher than normal pressure and a low-pressure process lower than normal pressure with respect to the plurality of substrates introduced into the reaction space A processing device, wherein the gas utility connects the outer gas exhaust port and the external exhaust device, controls the pressure of the protection space during a normal pressure or high pressure process for the reaction space, and protects the reaction space during a low pressure process an outer gas utility unit that pumps the space to control the pressure in the protective space to a pressure lower than normal pressure; The inner gas exhaust port and the external exhaust device are connected, and the pressure of the reaction space is controlled during the normal pressure or high pressure process for the reaction space, and the reaction space is pumped by pumping the reaction space during the low pressure process for the reaction space. Disclosed is a substrate processing apparatus including an inner gas utility unit for controlling the temperature to a pressure lower than normal pressure.

The inner gas utility unit may include: an inner exhaust unit including an inner exhaust line connecting the inner gas exhaust port and an external exhaust device, and a second high pressure control unit installed on the inner exhaust line to control the pressure of the reaction space; The inner exhaust line may include an inner pumping unit branched from the front end of the second high pressure control unit and connected to a vacuum pump connected to the external exhaust device to control the pressure in the reaction space to a pressure lower than normal pressure.

The outer gas utility unit includes an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space. ; It is branched from the front end of the first high pressure control unit of the outer exhaust line and is connected to the vacuum pump, and pumps the protection space to control the pressure of the protection space to be lower than normal pressure and higher than the pressure of the reaction space. can

The outer manifold further includes an outer pumping port formed around the side wall, and the outer gas utility unit includes an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and installed on the outer exhaust line an outer exhaust unit including a first high pressure control unit to control the pressure of the protective space; It may further include an outer pumping unit that connects the outer pumping port and the vacuum pump, and pumps the protective space to control the pressure of the protective space to be lower than normal pressure and higher than the pressure of the reaction space.

The inner manifold further includes an inner pumping port formed around a side wall, and the inner gas utility includes an inner exhaust line connecting the inner gas exhaust port and the external exhaust device, and installed on the inner exhaust line an inner exhaust unit including a second high pressure control unit to control the pressure of the reaction space; It may include an inner pumping unit that connects the inner pumping port and the vacuum pump, and pumps the reaction space to control the pressure in the reaction space to a pressure lower than normal pressure.

The outer gas utility unit includes an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space. ; It is branched from the front end of the first high pressure control unit of the outer exhaust line to connect the vacuum pump, and pumps the protection space to control the pressure of the protection space to be lower than normal pressure and higher than the pressure of the reaction space. can

The outer manifold further includes an outer pumping port formed around the side wall, and the outer gas utility unit includes an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and installed on the outer exhaust line an outer exhaust unit including a first high pressure control unit to control the pressure of the protective space; It may further include an outer pumping unit that connects the outer pumping port and the vacuum pump, and pumps the protective space to control the pressure of the protective space to be lower than normal pressure and higher than the pressure of the reaction space.

The first high pressure control unit may include a first high pressure exhaust valve installed on the outer exhaust line to control the exhaust of the protective space, and installed between the first high pressure exhaust valve and the external exhaust device, and the outer exhaust line and a first high-pressure control valve for controlling an exhaust amount of the protective space exhausted through , a second high pressure control valve installed between the second high pressure exhaust valve and the external exhaust device and configured to control an exhaust amount of the reaction space exhausted through the inner exhaust line.

The inner pumping unit may include: an inner vacuum pumping line connecting the front end of the second high pressure control unit among the inner exhaust lines and the vacuum pump; a second low-pressure regulating valve installed on the inner vacuum pumping line to control the flow to the vacuum pump; It may include a second main pumping valve installed between the second low-pressure shut-off valve and the vacuum pump to control the pressure in the reaction space to be maintained at a pressure lower than the normal pressure.

The inner pumping unit may include: an inner vacuum pumping line connecting the inner pumping port and the vacuum pump; a second low-pressure regulating valve installed on the inner vacuum pumping line to control the flow to the vacuum pump; It may include a second main pumping valve installed between the second low-pressure shut-off valve and the vacuum pump to control the pressure in the reaction space to be maintained at a pressure lower than the normal pressure.

The outer pumping unit may include: an outer vacuum pumping line connecting the vacuum pump to the front end of the first high pressure control unit among the outer exhaust lines; a first low-pressure regulating valve installed on the outer vacuum pumping line to control the flow to the vacuum pump; It may include a first main pumping valve installed between the first low-pressure shut-off valve and the vacuum pump to control the pressure in the protection space to be lower than normal pressure and to maintain a pressure higher than that of the reaction space.

The outer pumping unit includes: an outer vacuum pumping line connecting the outer pumping port and the vacuum pump; a first low-pressure regulating valve installed on the outer vacuum pumping line to control the flow to the vacuum pump; It may include a first main pumping valve installed between the first low-pressure shut-off valve and the vacuum pump to control the pressure in the protection space to be lower than normal pressure and to maintain a pressure higher than that of the reaction space.

The outer exhaust unit further includes a first safety line connected to both ends of the first high pressure control valve, and a first relief valve installed on the first safety line, and the inner exhaust unit, the second high pressure control valve It may further include a second safety line and the second safety line connected to both ends of the valve, and a second relief valve installed on the second safety line.

The outer pumping unit may further include a first slow pumping line connected to both ends of the first main pumping valve and a first slow pumping valve installed on the first slow pumping line to control a pumping amount for decompression. have.

The outer exhaust part may exhaust the protective space so that, when a high-pressure process is performed in the reaction space by driving the inner exhaust part, the pressure of the protective space is maintained higher than the pressure of the reaction space.

The outer exhaust unit may exhaust the protection space so that, when a low pressure process is performed in the reaction space by the driving of the inner pumping unit, the pressure of the protection space is maintained at normal pressure or higher than the normal pressure.

The outer pumping unit may pump the protective space so that, when a low-pressure process is performed in the reaction space by the driving of the inner pumping unit, the pressure of the protective space is maintained lower than normal pressure and higher than the pressure of the reaction space.

Since the substrate processing apparatus according to the present invention has a double tube structure formed of an inner tube and an outer tube, direct exposure of the inner tube to the external environment by the outer tube can be prevented, so that the reaction between the external environment and the inner tube There is an advantage in that it is possible to prevent the inner tube from being damaged by the environmental difference between spaces.

In addition, in the substrate processing apparatus according to the present invention, when the pressure of the protective space of the outer tube is maintained equal to or higher than the pressure of the reaction space of the inner tube during the process period for processing the substrate, the inner tube is damaged for an unspecified reason. There is an advantage in that it is possible to prevent particles, etc. from diffusing to the outside of the outer tube due to the high pressure of the protective space of the outer tube.

Accordingly, in the substrate processing apparatus according to the present invention, damage caused by the inner tube can be prevented, and the range of damage caused by the inner tube is limited to the inside of the outer tube, thereby ensuring the reliability of the substrate processing apparatus, and the process There is an advantage of improving the yield.

In addition, the substrate processing apparatus according to the present invention is independent of the reaction space and the protective space so as to maintain the pressure of the protective space of the outer tube equal to or higher than the pressure of the reaction space of the inner tube during the processing period for substrate processing. There is an advantage that gas supply and exhaust are possible.

In particular, the substrate processing apparatus according to the present invention is configured to enable pumping as well as independent gas supply and exhaust to the reaction space and the protective space, so that the protective space is lower than normal pressure and the reaction space is lower than normal pressure even when a low-pressure process is performed in the reaction space. It has the advantage of being able to maintain a higher pressure than the pressure of

1 is a cross-sectional view showing a state of a first position of a substrate processing apparatus according to the present invention.
FIG. 2 is a cross-sectional view illustrating a second position of the substrate processing apparatus of FIG. 1 .
FIG. 3 is an exploded perspective view illustrating the configuration of a manifold assembly in the substrate processing apparatus of FIG. 1 .
FIG. 4 is a cross-sectional view illustrating an assembly state of a manifold assembly in the substrate processing apparatus of FIG. 1 .
FIG. 5 is a schematic diagram showing a first embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
FIG. 6 is a schematic diagram showing a second embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
FIG. 7 is a schematic diagram showing a third embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
FIG. 8 is a schematic diagram showing a fourth embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
9 is a schematic diagram showing a fifth embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
FIG. 10 is a schematic diagram showing a sixth embodiment of a gas utility in the substrate processing apparatus of FIG. 1 .
11 is a waveform diagram of an embodiment for explaining an operation by a gas utility in the substrate processing apparatus of FIG. 1 .
12 is a waveform diagram of another embodiment for explaining an operation by a gas utility in the substrate processing apparatus of FIG. 1 .

Hereinafter, a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 1, the substrate processing apparatus according to the present invention includes an outer tube 20 having a protective space 22 therein and having a first inlet formed therein; A reaction space 32 is formed therein, and a second inlet is formed in the lower portion, a part is accommodated in the outer tube 20 and the portion in which the second inlet is formed is an inner protruding downward of the outer tube 20 . a tube 30; a manifold assembly supporting the upper outer tube 30 and the lower inner tube 20 spaced apart; and a cap flange 70 sealing the lower portion of the manifold assembly.

The present invention exemplifies a substrate processing apparatus that performs a process for processing a substrate.

A process for processing a substrate by a substrate processing apparatus may include a process for forming a film on a substrate such as a wafer or annealing.

Before forming the thin film, the substrate processing apparatus of the present invention may perform a high-pressure process in which the reaction space has a high pressure higher than normal pressure and a low-pressure process in which the reaction space has a low pressure lower than normal pressure, for example, after performing the high-pressure process A low-pressure process can be performed.

In this case, it can be understood that the substrate processing apparatus of the present invention pre-treats the substrate through a transformation process in which the high-pressure process and the low-pressure process are performed before forming the thin film.

By such pretreatment, it is possible to remove imperfections in the thin film due to impurities or other causes in the interfacial lattice of the substrate.

For example, when the surface of the substrate is contaminated with chlorine, chlorine forms a weak bond with silicon atoms of the substrate.

At this time, if hydrogen is used to ensure that the reaction space has an appropriate temperature and an appropriate high pressure above atmospheric pressure, hydrogen, which is a light atom, can penetrate not only the surface of the substrate but also the surface of the silicon lattice structure to a certain depth.

Therefore, the high-pressure hydrogen is accelerated by a reduction reaction with chlorine impurities to form a by-product of hydrogen chloride, which is separated from the silicon surface, and the separated by-products are discharged out of the reactor or chamber while the chamber is reduced to a low pressure.

In addition, in the high-pressure state, thermal vibration of silicon crystal atoms increases, and impurities forming a weak bond with silicon surface atoms are removed by the increased thermal vibration, so that the substrate surface recrystallizes or migrates. It can be promoted to obtain an annealing effect.

This recrystallization makes the molecular bonds between the elements constituting the thin film stronger, and even if impurities still remain, they react with the semiconductor surface and prevent adhesion.

In addition, the substrate processing apparatus of the present invention may perform a high-pressure process in which the reaction space has a high pressure higher than normal pressure and a low-pressure process in which the reaction space has a low pressure lower than normal pressure while forming the thin film, and exemplarily performs the high-pressure process After that, a low-pressure process may be performed.

In this case, the substrate processing apparatus of the present invention uses an appropriate gas to make the reaction space have a high pressure equal to or higher than normal pressure while forming the thin film, and then makes the pressure in the reaction space to have a low pressure lower than the normal pressure, thereby reducing the thickness of the thin film. characteristics can be improved.

Illustratively, in the case of a TiN thin film, when a part of the thin film is formed, the source gas is exhausted to stop the film formation, and in this state, hydrogen (H2) is injected into the reaction space so that the reaction space has a high pressure.

During high pressure, not only the density of hydrogen molecules increases, but also the movement of hydrogen molecules and gases becomes faster.

Therefore, the reaction with the residual chlorine (Cl) element in which the hydrogen molecules form a relatively weak bond or the chlorine (Cl) element in a relatively hard bond is further activated, and is reduced to hydrogen chloride (HCl) gas advantageous for exhaust.

In addition, in a high-pressure reducing atmosphere, recrystallization of the elements constituting the thin film is promoted to improve the quality of the thin film. In particular, such recrystallization makes the molecular bonds between the elements constituting the thin film stronger.

On the other hand, like hydrogen molecules exemplarily described in this process, the element input to the reaction space for high pressure is a gas that combines with impurities in the thin film to release by-products formed so that the impurities can be removed as a result.

When the reaction space has a low pressure in the following order, the remaining impurities such as chlorine (Cl) are exhausted as hydrogen chloride (HCl) gas.

More specifically, when the reaction space is reduced from high pressure to atmospheric pressure, byproducts in the hydrogen chloride (HCl) gas state may move to the surface of the thin film or to the outside of the thin film.

More specifically, in the process of reducing the reaction space from high pressure to atmospheric pressure, byproducts located deep in the thin film may move to the surface of the thin film, and byproducts relatively adjacent to the surface of the thin film may move to the outside of the thin film.

Thereafter, when the reaction space is reduced from normal pressure to low pressure through forced exhaust, the byproducts in the hydrogen chloride (HCl) gas state present in the chamber are discharged to the outside of the chamber by moving to the surface or outside of the thin film, and as a result, impurities are removed. can do.

As a result, through such a high-pressure process-low-pressure process, that is, a transformation process, the weak bonds formed by various undesirable residues in the TiN thin film with the thin film elements are broken, the broken impurities are removed more effectively than before, and the crystal structure of the thin film is changed. Imperfections and other organic matter are also more effectively removed and annealed.

Next, a source gas is introduced into the reaction space to form the remaining thickness of the TiN thin film.

In addition, the substrate processing apparatus of the present invention may be configured such that the reaction space has a high pressure higher than normal pressure after forming the thin film, and then the reaction space has a low pressure lower than normal pressure.

In this case, the substrate processing apparatus of the present invention may improve the characteristics of the thin film through the above-described transformation process after forming the thin film, and the characteristic improvement may be understood as the above-described examples, and thus a detailed description thereof will be omitted.

The substrate processing apparatus of the present invention may be implemented as shown in FIGS. 1 and 2 so as to have a structure capable of performing the above-described high-pressure process and the above-described low-pressure process.

1 and 2 illustrate a reactor as an example of a substrate processing apparatus.

The reactor of FIGS. 1 and 2 is referred to as a substrate processing apparatus for convenience of description.

FIG. 1 is a cross-sectional view of a substrate processing apparatus in a first position to show an internal thermocouple protection tube 100 , and corresponds to cut 1-1 of FIG. 3 .

And FIG. 2 is a cross-sectional view of the substrate processing apparatus at the second position for showing the gas supply pipe 69 therein, and corresponds to the part 2-2 cut in FIG. 3 .

The substrate processing apparatus is divided into an upper portion in which the heater 10 is configured and a lower portion in which the boat 80 is loaded, based on the partition wall CA.

The heater 10 is configured on the upper portion of the partition wall CA and has a heating space 12 therein, and the outer tube 20 and the inner tube 30 are accommodated in the heating space 12 .

The heating space 12 has an inlet at the bottom, and may be formed to have a cylindrical shape with a closed ceiling corresponding to the shapes of the outer tube 20 and the inner tube 30 accommodated therein.

The partition wall CA is configured to have a through area corresponding to the entrance of the heating space 12 .

The upper surface of the partition wall CA is configured to support the heater 10 on the heater base 14 with the heater base 14 having a predetermined thickness interposed therebetween.

The heater 10 may be exemplified as including a plurality of heating blocks (not shown) divided by height units, and the heating temperature may be independently controlled for each heating block.

The substrate processing apparatus of the present invention includes an outer tube (20) and an inner tube (30).

The outer tube 20 has a vertical cylindrical shape having a first dome-shaped ceiling, a protective space 22 is formed therein, and a first inlet is formed in the lower portion.

In addition, the outer tube 20 has a ring-shaped outer flange 28 extending outward from the first inlet.

At this time, the protective space 22 is a spaced space formed between the outer tube 20 and the inner tube 30, and is a space in which the pressure is controlled.

In the protective space 22 , when the reaction space 32 of the inner tube 30 has a pressure equal to or higher than normal pressure, the pressure in the protective space 22 may have a higher pressure than the reaction space 32 to a certain degree.

In addition, in the protective space 22, when the reaction space 32 has a low pressure less than atmospheric pressure, the pressure of the protective space may be maintained at a normal pressure, or may have a pressure higher than the normal pressure by a certain degree higher than that of the reaction space 32 which is a low pressure. have.

Therefore, the protective space 22 may be understood as a separation space or a pressure control space, and serves to prevent the spread of contamination by particles when the inner tube 30 is damaged.

The inner tube 30 has a vertical cylindrical shape having a second dome-shaped ceiling, a reaction space 32 is formed therein, and a second inlet can be formed at the lower portion.

In addition, a part of the inner tube 30 may be accommodated in the outer tube 20 , and a portion where the second inlet is formed may be configured to protrude downwardly of the outer tube 20 .

Furthermore, the inner tube 30 may have a ring-shaped inner flange 38 extending outward from the second inlet.

Here, the outer flange 28 of the outer tube 20 and the inner flange 38 of the inner tube 30 may have the same outer diameter.

Meanwhile, the outer tube 20 may be formed of a metal material, and the inner tube 30 may be formed of a non-metal material. As another example, both the outer tube 20 and the inner tube 30 may be formed of a non-metal material. have.

Illustratively, SUS may be used as the metallic material, and quartz may be used as the non-metallic material.

The outer tube 20 may be configured such that an inner wall of the inner tube 30 has a uniform spacing from the outer wall of the inner tube 30 while accommodating a portion of the inner tube 30 therein.

Accordingly, the outer tube 20 is configured to have an inner diameter greater than the outer diameter of the side wall of the inner tube 30 .

That is, the first inlet of the protective space 22 of the outer tube 20 is formed to have a larger inner diameter than the second inlet of the reaction space 32 of the inner tube 30 .

The first dome-shaped ceiling of the outer tube 20 and the second dome-shaped ceiling of the inner tube 30 may be configured in various shapes by the manufacturer so that the space created by being spaced apart from each other is maintained.

For example, the domed ceilings of the outer tube 20 and the inner tube 30 may be formed in a hemispherical shape having the same curvature.

Accordingly, when the outer tube 20 and the inner tube 30 are coupled, the protective space 22 may be formed between the outer tube 20 and the inner tube 30 .

As described above, the embodiment of the present invention has a double tube structure by the outer tube 20 and the inner tube 30 .

Therefore, the inner tube 30 can be prevented from being damaged by the environmental difference between the external environment and the internal reaction space 32 .

In addition, in the embodiment of the present invention, the outer tube 20 and the inner tube 30 are formed to each have a dome-shaped ceiling.

Since the dome-shaped structure can effectively distribute the internal pressure and the external pressure, the outer tube 20 and the inner tube 30 can secure safety against pressure by the dome-shaped ceiling.

And, since the dome-shaped ceiling can facilitate the flow of airflow, the inner tube 30 may have an advantage in that a vortex is formed in the upper part of the reaction space or the airflow is prevented from being partially stagnated.

The configuration of the inner tube 30 and the outer tube 20 so as to have the above-described pressure difference is that when the inner tube 30 is damaged for an unspecified reason, by-products during the process, processing gas and particles in the reaction space, etc. This is to prevent diffusion to the outside of the outer tube 20 by the high pressure of the protective space 22 of the outer tube 20 .

On the other hand, as shown in FIGS. 3 and 4 , the present invention includes a manifold assembly, and the manifold assembly is a first internal space 59 connected to the protective space 22 at the lower portion of the outer tube 20 . , and a second inner space 68 connected to the reaction space 32 is formed under the inner tube 30 .

In addition, the manifold assembly may support the outer tube 20 and the inner tube 30 so that the outer tube 20 and the inner tube 30 are kept spaced apart from each other.

To this end, the manifold assembly includes an outer manifold 50 , an inner manifold 60 , and a ring-shaped cover 40 .

And, the lower portion of the manifold assembly is sealed by the cap flange (70).

The ring-shaped cover 40 covers the outer flange 28 of the outer tube 20 from the top, and is configured to be coupled to the outer manifold 50 .

Accordingly, the outer flange 28 is interposed between the coupled ring-shaped cover 40 and the outer manifold 50 .

More specifically, the ring-shaped cover 40 may be formed with a plurality of fastening parts capable of fastening the coupling member to the edge, and the outer manifold 50 is a coupling member at the edge of the first upper flange 51 to be described later. A plurality of fastening parts capable of fastening may be formed.

Accordingly, the ring-shaped cover 40 and the outer manifold 50 can be coupled by the coupling member coupling the opposite fastening parts of the ring-shaped cover 40 and the outer manifold 50 .

In this case, the coupling member may be understood as a screw (or a nut), and the plurality of fastening units may be understood as a screw hole (or a bolt hole).

In addition, the ring-shaped cover 40 may be configured in a ring shape having a horizontal portion 44 facing the upper surface of the outer flange 28 of the outer tube 20 and a first vertical portion 42 formed on the side portion. have.

At this time, the outer tube 20 may be inserted into the ring-shaped through-hole of the ring-shaped cover 40 .

The first vertical portion 42 of the ring-shaped cover 40 is formed at a position outside the outer flange 28, and the screw holes (or bolt holes), which are fastening portions, are disposed along the ring-shaped edge portion, and the first vertical portion (42) may be formed to penetrate vertically.

The outer manifold 50 supports the lower end of the outer tube 20 and forms a first inner space 59 connected to the protective space 22 .

In this case, the protective space 22 and the first internal space 59 may form an independent space connected to each other.

The first inner space 59 forms a protective space 22 when the inner tube 30 is installed inside the outer tube 20, and provides an appropriate space between the two tubes.

Since the diameter of the inner tube 30 is smaller than the diameter of the outer tube 20 , the diameter of the second side wall of the inner manifold 60 is also smaller than the diameter of the first side wall of the outer manifold 50 , The inner space 59 may be formed naturally.

Meanwhile, the outer manifold 50 may include a first side wall 55 , a first upper flange 51 , and a first lower flange 53 .

The first side wall 55 may be configured to form a cylindrical first inner space 59 .

In addition, the first side wall 55 has an outer gas exhaust port 54 and an outer gas supply port 52 , and may further include an outer pumping port (not shown).

The outer gas exhaust port 54 is configured to exhaust the inert gas injected into the protective space 22 , and may be connected to an outer exhaust line 702 to be described later.

The outer gas supply port 52 is configured to inject an inert gas into the protective space 22 and may be connected to a first supply pipe 602 to be described later.

The outer pumping port is configured to be connected to an external vacuum pump 750 to form a pressure in the protective space 22 at a lower pressure than normal pressure, and may be connected to an outer vacuum pumping line 762 to be described later.

The first upper flange 51 may extend outwardly around the upper portion of the first side wall 55 and may be configured to support the lower end of the outer tube 20 , that is, the outer flange 28 .

In this case, the first upper flange 51, as described above, may be formed with a plurality of fastening portions capable of fastening the coupling member to the side portion.

As an example, on the edge of the first upper flange 51 , screw holes (or bolt holes), which are fastening parts corresponding to the positions at which the fastening parts of the ring-shaped cover 40 are formed, are disposed along the edge and formed to form a ring shape. The fastening portions of the cover 40 may be vertically penetrated.

The first lower flange 53 extends outwardly around the lower portion of the first side wall 55 and is coupled to the inner manifold 60 so that a plurality of first fastening parts capable of fastening the coupling member along the circumference are formed. is composed

Meanwhile, the outer manifold 50 may further include fastening parts 56 extending laterally from a plurality of positions of the first upper flange 51 and having vertical through-holes.

The fastening parts 56 may be coupled to the upper structure of the upper portion of the ring-shaped cover 40 by bolts 58 passing through the through holes.

Here, the superstructure may be at least one of the partition wall CA, the heater base 14 and the heater 10, and the coupling of the bolts 58 and the through-holes connects the fastening parts 56 with the superstructure. As exemplified as a binding material for the above, the above-described binding material may be variously modified according to the intention of the manufacturer.

Due to the structure of the outer manifold 50 , the ring-shaped cover 40 and the outer manifold 50 may be coupled with the outer flange 28 of the outer tube 20 interposed therebetween.

In addition, the outer manifold 50 uses the upper structure located on the upper part of the ring-shaped cover 40 , that is, at least one of the partition wall CA, the heater base 14 and the heater 10 and the fastening parts 56 . can be combined.

And, the first lower flange 53 of the outer manifold 50 is coupled to the second upper flange 61 of the inner manifold 60 with the inner flange 38 of the inner tube 30 interposed therebetween. .

The inner manifold 60 is coupled to the lower portion of the outer manifold 50 to support the lower end of the inner tube 30 and form a second inner space 68 connected to the reaction space 32 .

At this time, the reaction space 32 and the second internal space 68 form an independent space connected to each other.

The inner manifold 60 may include a second side wall 65 , a second upper flange 61 , and a second lower flange 63 .

The second side wall 65 may be configured to form a cylindrical second inner space 68 .

In addition, the second sidewall 65 may include an inner gas supply port 62 for supplying the process gas, an inner gas exhaust port 64 for exhausting the process gas, and an inner pumping port 66 .

The inner gas supply port 62 is configured to supply a process gas to the reaction space 32 and may be connected to a second supply pipe 622 to be described later.

The inner gas exhaust port 64 is configured to exhaust the process gas injected into the reaction space 32 , and may be connected to an inner exhaust line 722 to be described later.

The inner pumping port 66 is configured to be connected to an external vacuum pump 750 to form a pressure in the reaction space 32 at a lower pressure than normal pressure, and to be connected to an inner vacuum pumping line 742 to be described later. can

The second upper flange 61 extends outwardly around the upper portion of the second side wall 65 and is coupled to the outer manifold 50 so that a plurality of second fastening parts capable of fastening the coupling member along the circumference are formed. can be configured.

More specifically, the second upper flange 61 is configured to support the lower end of the inner tube 30 , that is, the inner flange 38 , and is coupled to the first lower flange 53 of the outer manifold 50 .

That is, the first lower flange 53 of the outer manifold 50 and the second upper flange 61 of the inner manifold 60 are first fastening parts corresponding to each other by a coupling member such as a screw (or bolt). And it may be coupled by the coupling of the second fastening part.

Here, the first fastening part and the second fastening part may be exemplified by screw holes (or bolt holes).

At this time, the first lower flange 53 of the outer manifold 50 and the second upper flange 61 of the inner manifold 60 are to be coupled with the inner flange 38 of the inner tube 30 interposed therebetween. can

In addition, the edge of the second upper flange 61 of the inner manifold 60 may be additionally provided with a second vertical portion 67 to form a second fastening portion.

The second vertical portion 67 may be formed in a region corresponding to the edge of the first lower flange 53 of the outer manifold 50 at a position outside the inner flange 38 .

Through this, the second vertical portion 67 may be formed such that the screw holes (or bolt holes), which are second fastening portions, are disposed along the edge and vertically penetrate therethrough.

Therefore, the first lower flange 53 and the second vertical portion 67 of the second upper flange 61 may be coupled by a coupling member such as a screw (or bolt), and as a result, the outer manifold 50 The wine inner manifold 60 may be coupled with the inner flange 38 interposed therebetween.

The second lower flange 63 extends outwardly around the lower portion of the second side wall 65 and is configured to be closed by the cap flange 70 .

In the present invention, as described above, the inner manifold 60 and the outer manifold 50 are configured under each of the inner tube 30 and the outer tube 20 .

Therefore, it is possible to separate the inner tube 30 and the outer tube 20 and to supply and exhaust gas independently therebetween, and the gas supply and exhaust structure is the lower part of the inner tube 30 and the outer tube 20 Convenience of design and assembly of the substrate processing apparatus can be secured by focusing on

Meanwhile, the substrate processing apparatus according to the present invention may include a plurality of sealing units installed at various positions.

For example, the sealing parts are, between the lower surface of the outer flange 28 and the upper surface of the first upper flange 51, between the lower surface of the first lower flange 53 and the upper surface of the inner flange 38, and the inner flange ( 38) may be interposed between the bottom surface and the upper surface of the second upper flange 61, respectively.

The sealing parts, for example, may be composed of an O-ring (OR), and an O-ring ( OR) may be formed with an O-ring groove (not shown) configured to be partially inserted.

On the other hand, the cap flange 70, the base plate 200, the elevating plate 210 and the clamp module 300 of the substrate processing apparatus according to the present invention will be described in detail.

The cap flange 70 is a configuration that elevates at the lower part of the second lower flange 63 of the inner manifold 60, and various configurations are possible.

The cap flange 70 is lifted and the upper surface is in close contact with the second lower flange 63 of the inner manifold 60 to seal the second inner space 68 .

Here, the second inner space 68 is connected to the upper reaction space 32 to form a single space, so that the cap flange 70 is in close contact with the second lower flange 63 and the inner tube (30) It can be understood that the reaction space 32 and the second inner space 68 of the inner manifold 60 are sealed together.

The cap flange 70 may be configured in a disk shape to cover the lower portion of the inner manifold 60 .

The cap flange 70 is elevated or lowered in association with the elevating or lowering of the elevating plate 210 .

The cap flange 70 may be raised and lowered so that the upper side has a first distance from the bottom of the inner manifold 60 to close the lower portion of the inner manifold 60 .

Accordingly, the cap flange 70 can isolate the reaction space 32 of the inner tube 30 connected to the inside of the inner manifold 60 from the outside by covering the lower part of the inner manifold 60 .

In addition, a rotation plate 90 on which the boat 80 is seated may be additionally provided on the upper portion of the cap flange 70 .

The rotation plate 90 is coupled to the lower portion of the boat 80 seated on the upper portion and is configured to receive rotational force from the lower driving unit 400 .

Through this, the rotation plate 90 may be configured to rotate the upper boat 80 by the rotational force of the driving unit 400 .

Accordingly, when the boat 80 is rotated during the process through the rotation plate 90, the gas for reaction can be evenly supplied to the substrates loaded in the boat 80, and as a result, the yield can be improved. have.

At this time, the boat 80 may ascend through the first inlet of the inner tube 30 and the passage of the manifold assembly in order to process the loaded substrate.

In addition, the boat 80 may descend through the first inlet of the inner tube 30 and the passage of the manifold assembly for unloading of the substrate on which the process is completed.

On the other hand, the base plate 200, the elevating plate 210, the clamp module 300 and the driving unit 400 are configured under the cap flange 70.

First, the base plate 200 may be fixed while maintaining a distance parallel to the lower portion of the cap flange 70 .

More specifically, the base plate 200 has a structure coupled to the cap flange 70 through a vertical rod, and the upper portion of the vertical rod is screwed with the cap flange 70 and the lower portion of the vertical rod is the base plate. By screwing with the 200, the base plate 200 and the cap flange 70 may be installed while maintaining a spaced apart from each other in parallel.

At this time, the base plate 200 is for installing a plurality of clamp modules 300 to be described later, and in this case, the plurality of clamp modules 300 may be installed dispersedly at a plurality of positions of the base plate 200 . .

The clamp module 300 includes a clamp having a clamping channel facing the side of the cap flange 70 .

At this time, the clamp module 300 is configured to clamp the cap flange 70 and the second lower flange 63 of the inner manifold 60 that are in close contact with the second spacing by driving the clamp in the clamping channel.

In addition, the clamp module 300 includes a clamp, a clamp bracket 320 and an actuator.

In the clamp, a clamping channel facing the side of the cap flange 70 is formed as described above, and in this case, the clamping channel may be of a clip type.

The clamping bracket 320 may be configured in a plate shape while vertically supporting the clamp.

The actuator is fixed to the bottom surface of the base plate 200 and is connected to the clamp bracket 320 through a rod.

The actuator moves the clamp bracket 320 and the clamp forward or backward by driving the rod.

Therefore, the clamp can be moved between the locking position for clamping and the unlocking position for releasing the clamp by driving the actuator.

The elevating plate 210 is configured in the lower portion of the base plate 200, and the elevating plate 210 is configured to maintain a spacing between the base plate 200 and the base plate 200 by the elastic force of the elastic part.

In this case, the elastic part may be a spring 212 interposed between the base plate 200 and the elevating plate 210 .

When the spring 212 and the cap flange 70 are lifted to abut against the bottom surface of the inner manifold 60, the upper surface of the cap flange 70 and the bottom surface of the inner manifold 60 are first spaced apart by the O-ring. It is possible to provide an elastic force for adhering to have a gap.

The elevating plate 210 is movably coupled while being spaced apart from the base plate 200 using a plurality of pins 214 into which the spring 212 is inserted, and the elevating plate 210 and the base plate 200. The spacing between the two may be maintained by the elasticity of the spring 212 .

The elevating plate 210 may be coupled to an elevating module (not shown) that provides elevating/lowering power by driving a motor to be elevated.

The elevating plate 210 is raised or lowered together with the upper base plate 200 , the cap flange 70 , the rotation plate 90 and the boat 80 integrally.

The spring 212 and the elevating plate 210 can buffer the vibration generated when the elevating plate 210 elevates, and when the elevating plate 210 elevates, the cap flange 70 moves the inner manifold 60 at the desired position. ) can provide elasticity for adhering to the bottom surface.

Accordingly, the lower portions of the above-described cap flange 70 and inner manifold 60 are clamped by clamps and can be maintained in close contact with the second spaced interval.

Therefore, the edges of the cap flange 70 and the inner manifold 60 do not spread beyond the second gap due to high pressure even when a high-pressure process for substrate processing is performed in the reaction space 32 after that, and is in an airtight state due to close contact. can keep

Hereinafter, coupling between the inner manifold 60 and the cap flange 70 by the cap flange and base plate 200 , the elevating plate 210 and the clamp module 300 will be described.

On the other hand, in the cap flange 70 according to the present invention, the cap flange 70 may be close to each other with the second lower flange 63 and the O-ring interposed therebetween.

At this time, the cap flange 70 and the second lower flange 63 spaced apart by the first spacing have a thickness greater than the height of the clamping channels of the clamps of the plurality of clamp modules 300 .

Accordingly, there is a problem in that it is difficult to clamp the cap flange 70 and the second lower flange 63 in the clamping channel at this time.

In order to overcome this problem, the substrate processing apparatus according to the present invention includes an inner pumping unit 740 that pumps the reaction space 32 of the inner tube 30 to be described later.

The inner pumping unit 740 is configured to pump the reaction space 32 so that the reaction space 32 has a pressure less than normal pressure, and a more detailed description will be given later.

In order to reduce the distance between the cap flange 70 and the second lower flange 63 , pumping may be performed by the inner pumping unit 740 .

More specifically, when the pressure in the reaction space 32 of the inner tube 30 becomes less than atmospheric pressure by the pumping of the inner pumping unit 740 , the upper surface of the cap flange 70 is the second of the inner manifold 60 . It may be adjacent to each other with a second spacing smaller than the first spacing with the bottom surface of the lower flange 63 and the O-ring therebetween.

More specifically, through the elevation of the cap flange 70, the upper surface of the cap flange 70 and the lower surface of the second lower flange 63 of the inner manifold 60 are in close contact with the O-ring, respectively, with the O-ring interposed therebetween. Approaching at the first spacing interval.

Thereafter, when the pressure in the reaction space 32 of the inner tube 30 becomes less than atmospheric pressure by the pumping of the inner pumping unit 740, the upper surface of the cap flange 70 rises additionally according to the pressure difference with the outside, and Accordingly, while the O-ring is contracted, the upper surface of the cap flange 70 and the lower surface of the second lower flange 63 of the inner manifold 60 may be adjacent to each other with a second spacing smaller than the first spacing.

In this process, the pumping of the inner pumping unit 740 may be understood as sequentially performing slow pumping and main pumping.

Accordingly, the cap flange 70 and the second lower flange 63 in close contact with the second spacing may have a thickness capable of being clamped in the clamping channels of the clamps of the plurality of clamp modules 300 .

Therefore, the plurality of clamp modules 300 may clamp the cap flange 70 and the second lower flange 63 of the inner manifold 60 which are closely contacted by the O-ring at the second spacing.

At this time, the first separation interval and the second separation interval are the difference due to the contraction of the O-ring (OR), which is a sealing portion interposed between the bottom surface of the inner manifold 60 and the upper surface of the cap flange 70 due to the decompression of the inner pumping unit 740 . can be understood as having

For the description of the embodiment, the second spacing may be exemplified as a contact between the lower surface of the inner manifold 60 and the upper surface of the cap flange 70 without a gap as the O-ring OR contracts.

In the embodiment of the present invention, the reduced pressure can be used even when the clamping of the cap flange 70 and the inner manifold 60 clamped by the clamp is released after the high-pressure process period for processing the substrate ends.

That is, in one of the embodiments of the present invention, after a high-pressure process period for substrate processing, the pressure in the reaction space 32 of the inner tube 30, which is in a high-pressure state, is first lowered to atmospheric pressure by exhausting, and then the pressure is lowered to atmospheric pressure by pumping. By lowering it, the cap flange 70 may be adjacent to the inner manifold 60 at a second spacing.

At this time, after the cap flange 70 and the inner manifold 60 are adjacent to each other at a second interval, the clamp modules 300 drive the clamps from the locked position to the unlocked position. ) can be released.

In this process, the distance between the cap flange 70 and the inner manifold 60 is narrowed by making the reaction space 32 of the inner tube 30 have a low pressure, and then the inner manifold 60 and the cap flange 70. can be clamped or unclamped.

Accordingly, the embodiment of the present invention has an advantage in that it is possible to prevent a leak from occurring between the inner manifold 60 and the cap flange 70 due to the high pressure during the process period for substrate processing.

Meanwhile, the thermocouple protection tube 100 of the substrate processing apparatus according to the present invention will be described in detail with reference to FIGS. 1 and 3 .

In the present invention, the reaction space 32 is formed using a vertical cylindrical inner tube 30 having a dome-shaped second dome-shaped ceiling.

In this case, the reaction space 32 may be divided into a ceiling area formed by the dome-shaped ceiling and a reaction area under the ceiling area where the boat 80 is located for the process.

The embodiment of the present invention may include a thermocouple and a thermocouple protection tube 100 capable of sensing temperature not only in the reaction area where the boat 80 is located, but also in the entire reaction space 32 including the upper ceiling area. have.

As shown in FIGS. 1 and 3 , the thermocouple protection tube 100 according to the present invention may include a thermocouple protection tube insertion end 104 for inserting the thermocouple protection tube 100 into the inner tube 60 .

More specifically, a thermocouple fastening hole for fastening the thermocouple protection tube 100 may be formed on the second sidewall 65 of the inner manifold 60 .

In this case, the thermocouple protection tube insertion end 104 for inserting the thermocouple protection tube 100 may be provided in the thermocouple fastener.

The thermocouple protection tube insertion end 104 is configured to pass through the second side wall 65 of the inner manifold 60 and is configured to guide the installation of a lower tube to be described later of the thermocouple protection tube 100 therein.

That is, the thermocouple protection tube 100 is vertically installed in the reaction space 32 of the inner tube 30 and is configured such that the lower portion is drawn out through the inner manifold 60 .

More specifically, the thermocouple protection tube 100 includes an upper extension tube; a vertical pipe formed vertically in succession to the extension pipe; and a lower pipe formed by being bent from the vertical pipe continuously to the vertical pipe, but to be easily withdrawn to the outside.

At this time, the extension tube, the vertical tube, and the lower tube may be formed integrally with a quartz material, and may form a closed tube with respect to the reaction space 32 .

The extension pipe is located in the upper ceiling area of the reaction space 32 .

The vertical pipe is located in the reaction area where the boat 80 is located among the reaction space 32 and extends to the lower inner manifold 60 .

The lower pipe is located in the second inner space 68 of the inner manifold 60 .

In particular, the lower tube is drawn out through the insertion end 104 of the thermocouple protection tube of the second side wall 65 of the inner manifold 60, and a plurality of thermocouples are inserted into the end of the drawn lower tube. An entrance is formed.

On the other hand, the plurality of thermocouples are inserted into the thermocouple protection tube 100 through the inlet of the lower tube, and may be configured to each have a detection unit that senses temperature at different positions in the reaction space 32 .

In this case, the detection unit may be understood as a sensor that generates a current according to the sensed temperature, and may be understood as being formed at the extended end of each thermocouple.

An embodiment of the present invention is exemplified as having five thermocouples.

In an embodiment of the present invention, it is preferable that the detection unit of at least one thermocouple is located in the extension tube.

That is, with respect to the thermocouple protection tube 100 , the detection unit of at least one thermocouple may be located in the ceiling region, and the detection units of the remaining thermocouples may be located in the reaction region.

Among them, some of the temperature sensing positions correspond to the ceiling region, and the remaining temperature sensing positions are located in the reaction region.

An embodiment of the present invention sets the temperature sensing positions at different heights. The setting of the temperature sensing position may be understood as designing a position where each detection unit of the plurality of thermocouples is to be formed.

As the temperature sensing positions are set as described above, the plurality of thermocouples are installed in the inner tube of the thermocouple protection tube 100 and the detection units are located at different temperature sensing positions, respectively.

Each thermocouple may perform temperature sensing by the detector and may output a current corresponding to the sensed temperature through a pair of terminals.

As described above, the plurality of thermocouples each have a pair of terminals for outputting a current corresponding to the sensed temperature, and the terminals of the plurality of thermocouples are drawn out through the end of the lower pipe extending to the outside of the inner manifold 60 . configured to be

From the above bar, the upper end of the extension tube of the thermocouple protection tube 100 and the temperature sensing position of the thermocouple are preferably formed to be located at a height above the middle of the ceiling area.

Illustratively, the upper end of the extension tube may be formed to be positioned below the uppermost portion of the dome-shaped ceiling.

In addition, the extension tube of the upper portion of the thermocouple protection tube 100 may be formed to extend to the ceiling region and to have an inwardly curved shape.

Illustratively, the extension pipe may be formed to have an inwardly refracted shape of the ceiling region to have an inclination angle.

In addition, the shape of the thermocouple protection tube 100 may be determined so as not to obstruct the air flow of the gas in the reaction space 32 or form a vortex.

To this end, the extension tube forming the upper portion of the thermocouple protection tube 100 may be formed to have a curved shape inwardly of the ceiling region to have a curve.

More specifically, the extension tube has the same curvature as the second dome-shaped ceiling of the inner tube 30, maintains a uniform spacing from the second dome-shaped ceiling, and extends while bending toward the upper portion of the second dome-shaped ceiling. .

In addition, the vertical tube of the thermocouple protection tube 100 is vertically fixed to maintain a uniform spacing from the inner wall of the inner tube 30 .

The extension tube, the vertical tube, and the lower tube of the thermocouple protection tube 100 may be configured to have the same inner diameter and the same outer diameter.

On the contrary, when the number of thermocouples inserted therein is large, it may be configured to have a larger inner diameter and a larger outer diameter toward the bottom.

On the other hand, the embodiment of the present invention is provided with a heater 10 for heating the reaction space 32 for substrate processing in a high-temperature environment.

The heater 10 heats the outer tube 20 and the inner tube 30 in the heating space 12 .

At this time, the reaction space 32 of the inner tube 30 should be heated to have a uniform temperature distribution as a whole.

Therefore, the heater 10 also needs to be configured to independently control heating for each position.

To this end, the heater 10 may be manufactured to include a plurality of heating blocks (not shown) corresponding to each temperature sensing position. At this time, it is preferable that the heating temperature of each heating block is independently controlled.

And, the above-described temperature sensing positions correspond to each heating block, and one of the temperature sensing positions, that is, a temperature sensing position, may be set to correspond to the heating block for heating the ceiling area.

In addition, the remaining temperature sensing positions may be set to correspond one-to-one to the remaining heating blocks for heating the reaction region in which the boat 80 is disposed.

As described above, in the thermocouple for temperature sensing, detection units are formed for each temperature sensing position, and the temperature is sensed at each position of the ceiling region and the reaction region.

Each heating block may have a heating temperature independently controlled in response to a sensing signal of a thermocouple at a corresponding temperature sensing position.

Therefore, in the embodiment of the present invention, the temperature sensing and heating of the entire reaction space 32 by performing temperature sensing and temperature control for the ceiling region formed by using the vertical cylindrical inner tube 30 having a dome-shaped ceiling. control can be performed, and as a result, it is possible to maintain a uniform temperature for the entire reaction space 32 for substrate processing.

Hereinafter, the gas utility according to the present invention will be described in detail with reference to FIGS. 5 to 12 .

In the embodiment of the present invention, the reaction space 32 has a high pressure higher than normal pressure for at least one before, during, and after the deposition of the thin film, and then a series of processes having a low pressure lower than the normal pressure are performed. is configured to

To this end, the embodiment of the present invention may include a gas utility that performs pressurization, depressurization, and exhaust for the protective space 22 and pressurizes, depressurizes, and exhausts the reaction space 32 .

For example, the gas utility may proceed with a process in which the reaction space 32 has a high pressure higher than the normal pressure and then has a low pressure lower than the normal pressure.

At this time, when the reaction space 32 is above atmospheric pressure, the first internal pressure PO of the protective space 22 is maintained higher than the second internal pressure PI of the reaction space 32 by a uniform difference.

In addition, the gas utility may make the reaction space 32 have a low pressure less than normal pressure in order to check a leak before a process period for substrate processing or to clamp the cap flange 70 and the inner manifold 60 .

An embodiment of the present invention having the gas utility will be described with reference to FIGS. 5 to 10 , and the second internal pressure PI of the reaction space 32 and the first internal pressure PO of the protective space 22 by the gas utility A change in can be understood with reference to FIGS. 11 and 12 .

Meanwhile, the heater 10 , the outer tube 20 , and the inner tube 30 can be understood with reference to the embodiments of FIGS. 1 to 2 , and thus a redundant description thereof will be omitted.

On the other hand, as the gas input to the protective space 22, nitrogen may be used as the inert gas.

In addition, as a gas input to the reaction space 32, the process gas including an inert gas or a processing gas for substrate processing is hydrogen (H), oxygen (O), nitrogen (N), chlorine (Cl), fluorine A gas comprising one or more elements such as (F) and the like may be applied.

For example, the process gas may be used in the form of hydrogen (H2), deuterium (D2), oxygen (O2), water vapor (H20), ammonia (NH3), and the like.

Meanwhile, various embodiments of the gas utility according to the present invention will be described below with reference to the accompanying drawings.

First, as a first embodiment of the gas utility according to the present invention, as shown in FIG. 5 , the outer gas exhaust port 54 and the external exhaust device 793 are connected and the reaction space 32 is subjected to normal or high pressure. Outer gas utility unit that controls the pressure of the protective space 22 during the process and pumps the protective space 22 during the low-pressure process for the reaction space 32 to control the pressure in the protective space 22 to a pressure lower than normal pressure Wow; The inner gas exhaust port 64 and the external exhaust device 793 are connected, and the pressure of the reaction space 32 is controlled during the normal pressure or high pressure process for the reaction space 32 , and the reaction space 32 reacts during the low pressure process. It may include an inner gas utility unit that pumps the space 32 to control the pressure in the reaction space 32 to a pressure lower than normal pressure.

In addition, as a first embodiment of the gas utility according to the present invention, as shown in FIG. 5 , a pressure transformation process including a high-pressure process higher than normal pressure and a low-pressure process lower than normal pressure with respect to a plurality of substrates introduced into the reaction space As a configuration for controlling the exhaust of the reaction space 32 and the protective space 22, respectively, various configurations are possible.

For example, the gas utility is provided to the reaction space 32 through the first gas supply unit 600 and the second supply pipe 622 for supplying an inert gas to the protection space 22 through the first supply pipe 602 . A second gas supply unit 620 for supplying a process gas is provided.

The outer gas utility unit may include an outer exhaust unit 791 for exhausting the protective space 22 and an outer pumping unit 760 for pumping the protective space 22 .

In addition, the inner gas utility unit may include an inner exhaust unit 792 that exhausts the reaction space 32 and an inner pumping unit 740 that pumps the reaction space 32 .

The first gas supply unit 600 includes a first supply valve (V1) connected to the first supply pipe (602), wherein the first supply valve (V1) uses various pressures to exhaust or pressurize the inert gas. It is possible to control the supply amount of the inert gas to supply.

In this case, the first supply pipe 602 may be connected to the outer gas supply port 52 that supplies the inert gas of the outer manifold 50 .

That is, the first supply pipe 602 may be connected to the protective space 22 of the outer tube 20 through the outer manifold 50 .

The second gas supply unit 620 includes a second supply valve V4 connected to the second supply pipe 622, and the second supply valve V4 controls the supply amount of the process gas to supply the process gas at various pressures. can be controlled

In this case, the second supply pipe 622 may be connected to the inner gas supply port 62 that supplies the process gas of the inner manifold 60 .

That is, the second supply pipe 622 may be connected to the reaction space 32 of the inner tube 30 through the inner manifold 60 .

The outer exhaust part 791 is a configuration for controlling exhaust to the protective space 22, and various configurations are possible.

For example, the outer exhaust part 791 is installed on the outer exhaust line 702 connecting the outer gas exhaust port 54 and the external exhaust device 793, and the outer exhaust line 702 to provide a protective space ( 22) may include a first high pressure control unit 700 for controlling the exhaust of the inert gas introduced into the.

In this case, the outer exhaust line 702 may be connected to the outer gas exhaust port 54 for exhausting the inert gas of the outer manifold 50 .

That is, the outer exhaust line 702 may communicate with the protective space 22 of the outer tube 20 through the outer manifold 50 .

The first high pressure control unit 700 is configured to control the first internal pressure PO of the protective space 22 through the outer exhaust line 702 , and various configurations are possible.

For example, the first high pressure control unit 700 is configured in parallel with the first high pressure exhaust valve V2 and the first high pressure control valve OCV installed on the outer exhaust line 702 and the outer exhaust line 702 It may include a first relief valve (REV1) configured in the first safety line (706).

Here, the first high-pressure exhaust valve V2 may be opened to exhaust the protective space 22 of the outer tube 20 .

In addition, the first high pressure control valve OCV may control the amount of exhaust through the outer exhaust line 702 .

In addition, the first relief valve REV1 may be mechanically opened for exhaust when a preset high pressure or higher is detected.

Also, the first high pressure control unit 700 may include a first pressure gauge (not shown) installed in the outer exhaust line 702 .

In this case, a separately provided control unit (not shown) checks the pressure in the protective space 22 through a first pressure gauge (not shown) installed in the outer exhaust line 702 and a first high pressure control valve (OCV) It is possible to transmit a control signal to control the etc.

The inner exhaust unit 792 is configured to exhaust the reaction space 32, and various configurations are possible.

For example, the inner exhaust part 792 is installed on the inner exhaust line 722 connecting the inner gas exhaust port 64 and the external exhaust device 793, and the inner exhaust line 722 to form a reaction space ( 32) may include a second high-pressure control unit 720 for controlling the exhaust of the inert gas and the process gas.

At this time, the inner exhaust line 722 is connected to the inner gas supply port 64 for exhausting the process gas of the inner manifold 60, and the inner vacuum pumping line 742 is the low pressure of the inner manifold 60. It is connected to the inner pumping port 66 for forming.

That is, the inner exhaust line 722 and the inner vacuum pumping line 742 may be connected to the reaction space 32 of the inner tube 30 through the inner manifold 60 .

The second high pressure control unit 720 is configured to control the second internal pressure PI of the reaction space 32 through the inner exhaust line 722 , and various configurations are possible.

For example, the second high pressure control unit 720 may include a second high pressure exhaust valve V3 and a second high pressure control valve ICV installed on the inner exhaust line 722 in parallel with the inner exhaust line 722 . A second safety line 726 is configured and configured to include a second relief valve REV2.

Here, the second high-pressure exhaust valve V3 may be opened to exhaust the reaction space 32 of the inner tube 30 .

In addition, the second high pressure control valve ICV may control the amount of exhaust through the inner exhaust line 722 .

In addition, the second relief valve REV2 may be mechanically opened for exhaust when a preset high pressure or higher is detected.

On the other hand, it is preferable that the first relief valve REV1 and the second relief valve REV2 are configured to be opened for exhaust with respect to the same high pressure or higher.

In addition, the second high pressure control unit 720 may include a second pressure gauge (not shown) installed in the inner exhaust line 722 .

In this case, the control unit checks the pressure in the reaction space 32 through a second pressure gauge (not shown) installed in the inner exhaust line 722 and sends a control signal to control the second high pressure control valve (ICV), etc. can be transmitted

Details regarding the operation relationship of the first pressure gauge and the second pressure gauge will be described later.

The inner pumping unit 740 connects the inner pumping port 66 and the vacuum pump 750 , and pumps the reaction space 32 at a pressure lower than normal pressure, and various configurations are possible.

For example, the inner pumping unit 740 may include a second low pressure shutoff valve V5, a second main pumping valve V7, and a second slow pumping valve V6.

The second low pressure shutoff valve V5 is installed on the inner vacuum pumping line 742 and may be opened to form a low pressure in the reaction space 32 of the inner tube 30 .

In addition, the second main pumping valve V7 is installed on the second main pumping line 744 connected to the inner vacuum pumping line 742 and can control the amount of pumping through the inner vacuum pumping line 742 . have.

In addition, the second slow pumping valve (V6) is installed on the second slow pumping line (746) in parallel with the second main pumping valve (V7), the pumping amount through the second slow pumping line (746) can be controlled

On the other hand, the operation relationship related to the pressure control through the gas utility of the above-described first embodiment will be described below.

In order to control the pressure of the protective space 22 of the outer tube 20, an inert gas is supplied from the first supply pipe 602 to the outer tube 20, or the outer tube 20 is Exhaust control may be performed.

In addition, in order to control the pressure of the reaction space 32 of the inner tube 30 , a process gas is supplied from the second supply pipe 622 to the inner tube 30 or the inner tube 30 through the inner exhaust line 722 . ) is performed, and the inner tube 30 may be pumped by the inner vacuum pumping line 742 .

More specifically, when it is desired that the pressure in the reaction space 32 be higher than the atmospheric pressure, the second high pressure control unit 720 may adjust the exhaust amount of the inner exhaust line 722 so that the second internal pressure PI is higher than the atmospheric pressure. have.

In this case, the first high pressure control unit 700 may adjust the exhaust amount of the outer exhaust line 702 so that the first internal pressure PO is higher than the second internal pressure PI.

In particular, in this case, the exhaust amount of each of the outer exhaust line 702 and the inner exhaust line 722 can be adjusted so that the first internal pressure PO has a higher pressure with a uniform pressure difference than the second internal pressure PI. .

To this end, the second high pressure control valve ICV may control the amount of exhaust through the inner exhaust line 722 based on a preset value.

In addition, the first high pressure control valve (OCV) is configured to control the amount of exhaust through the outer exhaust line 702 so that the pressure of the outer exhaust line 702 can be controlled based on the pressure of the inner exhaust line 722 . can

And, when it is desired that the pressure in the reaction space 32 is lower than the atmospheric pressure, the first high pressure control unit 700 and the second high pressure control unit 720 are configured to maintain the first internal pressure PO at the normal pressure, the outer exhaust line 702 ) and control the exhaust and pumping amounts of the inner exhaust line 722 and the inner vacuum pumping line 742 so that the second internal pressure PI has a low pressure.

More specifically, by opening the outer exhaust line 702 through the high pressure control valve OCV, the first internal pressure PO may be maintained at normal pressure.

In addition, the second internal pressure PI of the reaction space 32 of the inner tube 30 may be reduced by pumping through the second slow pumping valve V6, and then the second main pumping valve V7 It can then be depressurized again by pumping through the

At this time, the second low pressure shutoff valve V5 maintains an open state while pumping is performed by the second slow pumping valve V6 and the second main pumping valve V7.

For example, the second slow pumping valve V6 may control the pumping amount until the second internal pressure PI of the reaction space 32 of the inner tube 30 reaches, for example, 10 Torr, The second main pumping valve V7 may control the pumping amount until the reaction space 32 of the inner tube 30 reaches a low pressure of 10 Torr or less.

In addition, the pumping applied to the inner vacuum pumping line 742 , the second main pumping line 744 , and the second slow pumping line 746 may depend on the pumping force of the vacuum pump 750 .

In addition, the first high pressure control valve OCV, the second high pressure control valve ICV, and the vacuum pump 750 may be connected to the scrubber 800 through the scrubber line 802 .

The scrubber 800 is configured to exhaust the first high pressure control valve (OCV), the second high pressure control valve (ICV), and the vacuum pump 750 , and may be included in the external exhaust device 793 .

On the other hand, for the above-described operating relationship, the control unit checks the pressure of the protective space 22 through the first pressure gauge, and according to the difference from the preset pressure value, the protective space ( OCV) through the first high pressure control valve (OCV) By adjusting the exhaust amount of 22), the pressure of the protective space 22 can be controlled.

In addition, the control unit checks the pressure of the reaction space 32 through the second pressure gauge and adjusts the exhaust amount of the reaction space 32 through the second high pressure control valve (ICV) according to the difference from the preset pressure value. , the pressure of the reaction space 32 may be controlled.

On the other hand, the pressure of the protective space 22 may be set always greater than the pressure of the reaction space 32 , or further, it may be set to maintain the same pressure difference as the reaction space 32 .

In this case, the first pressure gauge may be omitted, and a constant pressure difference may be set based on the pressure of the reaction space 32 checked through the second pressure gauge, so that the first high pressure control valve OCV may be controlled.

On the other hand, the inner pumping unit 740 and the outer pumping unit 760 according to the present invention to be described later, respectively, the inner vacuum pumping line 742 and the outer vacuum pumping line 762, etc., respectively, a pressure gauge may be installed separately, the pressure gauge The inner pumping unit 740 and the outer pumping unit 760 may be controlled based on the pressure measurement value of .

As another example, separate pressure gauges for the inner pumping unit 740 and the outer pumping unit 760 are omitted, and the pressure of the reaction space 32 is controlled through the second pressure gauge provided in the second high pressure control unit 720 . It is measured, and the first high pressure control unit 700 , the inner pumping unit 740 , and the outer pumping unit 760 may be controlled based on the measured values.

In the gas utility configured as described above, after a period of pressurizing the second internal pressure PI of the reaction space 32 of the inner tube 30, the process having a low pressure lower than the normal pressure may be repeatedly performed. .

At this time, the gas utility has a protective space 22 of the outer tube 20 even when the second internal pressure PI of the reaction space 32 of the inner tube 30 is lower than the normal pressure or maintains the lowered state. The first internal pressure (PO) of the can be adjusted so that the normal pressure is maintained.

Meanwhile, another embodiment of the gas utility according to the present invention will be described with reference to the accompanying drawings, and a detailed description of the same configuration as that of the first embodiment will be omitted.

The gas utility, as a second embodiment, is branched from the front end of the first high pressure control unit 700 of the outer exhaust line 702 to connect the vacuum pump 750 as shown in FIG. 6 , and a protective space 22 ) may further include an outer pumping unit 760 for pumping to maintain a pressure lower than the normal pressure and higher than that of the reaction space 32 .

The outer pumping unit 760 is branched from the front end that is the outer tube 30 side of the first high pressure control unit 700 among the outer exhaust line 702 of the outer exhaust unit 791 to connect the vacuum pump 750. .

Accordingly, the outer pumping unit 760 is configured to pump and exhaust the protective space 22 to maintain a pressure lower than the normal pressure and higher than the reaction space 32 , and various configurations are possible.

For example, the outer pumping unit 760 is installed on an outer vacuum pumping line 762 connecting the outer exhaust unit 791 and the vacuum pump 750 and the outer vacuum pumping line 762 to vacuum It may include a first low-pressure shut-off valve (V9) for controlling the flow to the pump (750).

In addition, the outer pumping unit 760 is installed between the first low pressure shutoff valve V9 and the vacuum pump 750 to lower the pressure of the protective space 22 than normal pressure and maintain a pressure higher than that of the reaction space 32 . It may include a first main pumping valve (V11) for controlling to do so.

In addition, the outer pumping unit 760 includes a first valve (V12) for guiding the exhaust of the inert gas of the protective space 22 to be performed by any one of the outer exhaust unit 791 and the outer pumping unit 760. can do.

At this time, the vacuum pump 750 may be a vacuum pump to which the configuration of the inner pumping unit 740 is connected, and as another example, a separate vacuum pump to which the outer pumping unit 760 is connected is provided to the inner pumping unit 740 and may be connected to a different vacuum pump.

The first low pressure shutoff valve V9 is installed on the outer vacuum pumping line 762 and may be opened to form a low pressure in the protective space 22 of the outer tube 20 .

In addition, the first main pumping valve V11 is installed on the first main pumping line 764 connected to the outer vacuum pumping line 762 and can control the amount of pumping through the outer vacuum pumping line 762 have.

In addition, the first slow pumping valve (V10) is installed on the first slow pumping line (766) in parallel with the first main pumping valve (V11), the pumping amount through the first slow pumping line (766) can be controlled

Due to the configuration of the outer pumping unit 760 described above, the pressure in the protective space 22 of the outer tube 20 may be reduced by pumping through the first slow pumping valve V10, and the first main pumping valve It can then be depressurized again by pumping through (V11).

At this time, the first low-pressure shut-off valve V9 maintains an open state while pumping is performed by the first slow pumping valve V10 and the first main pumping valve V11.

For example, the first slow pumping valve V10 may control the pumping amount until the pressure of the protective space 22 of the outer tube 20 reaches, for example, 10 Torr, and the first main pumping valve V11 ) can control the pumping amount until the protective space 22 of the outer tube 20 reaches a low pressure of 10 Torr or less.

And, the pumping applied to the outer vacuum pumping line 762 , the first main pumping line 764 , and the first slow pumping line 766 may depend on the pumping force of the vacuum pump 750 .

In addition, in this case, it is provided between the first high pressure control unit 700 and the outer vacuum pumping line 762 of the outer exhaust line 702 to exhaust the inert gas of the protective space 22 by the outer exhaust part 791 and the outer The pumping unit 760 may further include a first valve (V12) for inducing to perform any one.

Through this, in the state in which the first valve V12 is closed, the inert gas of the protective space 22 can be exhausted through the outer pumping unit 760, and in the state in which the first valve V12 is opened, the first low pressure It is possible to exhaust the inert gas of the protective space 22 through the outer exhaust portion 791 together with the closing of the shut-off valve (V9).

On the other hand, in the gas utility according to the second embodiment, when the second internal pressure PI, which is the pressure of the reaction space 32, is formed at a low pressure lower than the normal pressure, the first internal pressure ( PO) may maintain the same constant pressure difference ΔP as when the second internal pressure PI is high pressure.

In particular, in order to maintain a constant pressure difference ΔP, when the first internal pressure PO must be greater than the second internal pressure PI and smaller than the atmospheric pressure, the first internal pressure PO through the configuration of the above-described outer pumping unit 760 By forming the internal pressure PO to a low pressure, it is possible to maintain a constant pressure difference ΔP.

As a third embodiment of the gas utility according to the present invention, as shown in FIG. 7 , the outer pumping unit 760 has one end connected to a separate outer pumping port provided in the outer manifold 50 and the other end is external. It may be arranged to be connected to the exhaust device 793 .

That is, the outer manifold 50 includes an outer pumping port for maintaining the internal pressure of the protective space 22 in a state lower than the normal pressure and higher than the pressure of the reaction space 32 .

At this time, the gas utility may connect the outer pumping port and the vacuum pump 750 and pump the protective space 22 to maintain a pressure lower than normal pressure and higher than that of the reaction space 32 .

At this time, the outer vacuum pumping line 762 may connect the outer pumping port and the vacuum pump 750 .

As a fourth embodiment of the gas utility according to the present invention, as shown in FIG. 8 , the gas utility is branched from the front end of the second high pressure valve unit 720 of the inner exhaust line 722 of the inner exhaust unit 792 . and connects the vacuum pump 750 connected to the external exhaust device 793 , and may include an inner pumping unit 740 for pumping the reaction space 32 to a pressure lower than normal pressure.

That is, the inner pumping unit 740 branches from the front end of the second high-pressure valve unit 720 of the inner exhaust line 722 of the inner exhaust unit 792 and is connected to the external exhaust device 793, whereby the reaction space 32 It can be made to perform low pressure exhaust below the atmospheric pressure of

In this case, the inner pumping unit 740 may include an inner vacuum pumping line 742 branching from the inner exhaust line 722 of the inner exhaust unit 792, and the above-described second main pumping line ( 744 ) and the other end of the second slow pumping line 746 may be disposed to be connected to the external exhaust device 793 , that is, the vacuum pump 750 .

In this case, the configuration of the above-described outer pumping unit 760 may be omitted, and the pressure of the protective space 22 may be maintained high to have a deviation from the pressure of the reaction space 32 above atmospheric pressure or atmospheric pressure.

In addition, in this case, it is provided between the second high pressure control unit 720 and the inner vacuum pumping line 742 of the inner exhaust line 722 to exhaust the process gas of the reaction space 32 by the inner exhaust unit 792 and the inner It may further include a second valve (V8) for inducing to selectively perform any one of the pumping unit (740).

That is, in a state in which the second valve V8 is closed, the process gas of the reaction space 32 may be exhausted through the inner pumping unit 740 .

In this case, in the state in which the second valve V8 is opened, the process gas of the reaction space 32 may be exhausted through the inner exhaust unit 792 together with the closing of the second low pressure shutoff valve V5.

In addition, as the fifth embodiment, as shown in FIG. 9 , the gas utility, as in the fourth embodiment, has the outer pumping unit 760 in the state in which the inner pumping unit 740 is provided and the outer exhaust unit 791 ) of the outer exhaust line 702 may be branched from the front end of the first high pressure control unit 700 and connected to the external exhaust device 793 .

Accordingly, the pumping of the protective space 22 may be performed to maintain a low pressure state that is less than the normal pressure.

In this case, the outer pumping unit 760, the outer vacuum pumping line 762, the first high pressure control unit 700 of the outer exhaust line 702 of the outer exhaust unit 791 It may be provided by branching from the front end, , the other end of the first main pumping line 764 and the first slow pumping line 766 described above may be arranged to be connected to the external exhaust device 793 , that is, the vacuum pump 750 .

As another example, as shown in FIG. 10 , as a sixth embodiment, the outer pumping unit 760 has one end connected to a separate outer pumping port provided in the outer manifold 50 and the other end of the external exhaust device ( 793) may be arranged to be connected.

That is, the outer manifold 50 includes an outer pumping port for maintaining the internal pressure of the protective space 22 at a state lower than the normal pressure and higher than the pressure of the reaction space 32 , and the gas utility includes an outer pumping port and a vacuum By connecting the pump 750 , the protective space 22 may be pumped to maintain a pressure lower than normal pressure and higher than that of the reaction space 32 .

At this time, the outer vacuum pumping line 762 may connect the outer pumping port and the vacuum pump 750 .

Meanwhile, with reference to FIGS. 11 and 12 , a pressure control method of the reaction space 32 and the protective space 22 for each period will be described.

For reference, the meaning of the term 'pressurization' used throughout the specification of the present invention refers to a case in which the pressure is increased larger than the previous step, and the term 'reduced pressure' is used in the opposite sense.

In addition, the meanings of the terms 'high pressure' and 'low pressure' indicate a pressure higher than the normal pressure and a pressure lower than the normal pressure, respectively, even if not otherwise described.

Hereinafter, the pressure control method according to FIG. 11 will be described through the first embodiment of FIG. 5 , which is a representative gas utility, but may be applied through the gas utilities of the second to sixth embodiments of FIGS. 6 to 10 , of course. to be.

The period T1 and period T2 for the pretreatment are periods for preparing a leak check and pressurization process.

In the period T1 and period T2 , the process gas supply of the second gas supply unit 620 to the reaction space 32 of the inner tube 30 and the exhaust of the second high pressure control unit 720 are not performed.

At this time, the inert gas supply of the first gas supply unit 600 and the exhaust of the first high pressure control unit 700 are controlled to maintain the atmospheric pressure with respect to the protective space 22 of the outer tube 20 .

Then, in the period T1, the inner pumping unit 740 opens the low pressure shutoff valve V5, then closes the main pumping valve V7 and opens the slow pumping valve V6.

That is, the slow pumping of the reaction space 32 of the inner tube 30 is performed.

In the period T2, the inner pumping unit 740 keeps the low pressure shutoff valve V5 open, opens the main pumping valve V7, and closes the slow pumping valve V6.

That is, the main pumping of the reaction space 32 of the inner tube 30 is performed.

The second internal pressure PI of the reaction space 32 of the inner tube 30 is reduced to a level lower than the normal pressure by the slow pumping in the period T1, and the reduced pressure is maintained by the main pumping in the period T2.

When the reaction space 32 of the inner tube 30 is sealed by the cap flange 70 and the reaction space 32 of the inner tube 30 has a low pressure during periods T1 and T2, the inner tube It can be checked whether a leak occurs in the reaction space 32 of (30).

In addition, the clamp module 300 may perform clamping by close contact between the cap flange 70 and the second lower flange 63 of the inner manifold 60 due to the low pressure of the reaction space 32 in the period T2. .

After performing the pre-treatment as described above, the gas utility may perform the process as in the period T3 to period T7 of FIG. 11 .

11 exemplifies that the process is repeated twice, and since the processes of the period T3 to T7 are performed in the same manner in the period T9 to T13, a redundant description will be omitted.

If the low pressure needs to be maintained even while the process is being repeated twice in a row, it may be carried out as shown in the T8 period.

The pumping of the inner pumping unit 740 to the reaction space 32 of the inner tube 30 is stopped during the period T3 to T6.

In the period T3 , the inert gas supply of the first gas supply unit 600 and the exhaust of the first high pressure control unit 700 are controlled to maintain the normal pressure of the protective space 22 of the outer tube 20 .

Then, the second gas supply unit 620 supplies the process gas to increase the second internal pressure PI of the reaction space 32 of the inner tube 30 to normal pressure, and the second high pressure control unit 720 exhausts the gas. do not perform

At this time, the process gas supplied to the inner tube 30 may use hydrogen.

In the period T4, the protective space 22 of the outer tube 20 and the reaction space 32 of the inner tube 30 apply a first internal pressure PO and a second internal pressure PI of higher pressure than normal pressure, respectively. and the first internal pressure PO maintains a high pressure of a constant difference from the second internal pressure PI.

In the period T4 , the inert gas supply of the first gas supply unit 600 and the exhaust of the first high pressure control unit 700 are controlled so that the protective space 22 of the outer tube 20 has a high pressure equal to or higher than normal pressure.

At this time, in order to pressurize the protective space 22 of the outer tube 20 , the first gas supply unit 600 supplies the inert gas in excess of the exhaust amount.

And, in order for the reaction space 32 of the inner tube 30 to have a high pressure higher than normal pressure, the process gas supply of the second gas supply unit 620 and the exhaust of the second high pressure control unit 720 are controlled.

At this time, in order to pressurize the reaction space 32 of the inner tube 30 , the second gas supply unit 620 supplies the process gas in excess of the exhaust amount.

For example, the process gas supplied to the inner tube 30 may use hydrogen.

After that, the protective space 22 of the outer tube 20 and the reaction space 32 of the inner tube 30 maintain a high pressure with a constant difference between the first internal pressure PO and the second internal pressure PI. .

In order to maintain this high pressure difference, the inert gas supply of the first gas supply unit 600 and the exhaust of the first high pressure control unit 700 are maintained, and the process gas supply of the second gas supply unit 620 and the second high pressure control unit ( 720) is maintained.

At this time, the supply and exhaust of the inert gas to the protective space 22 and the supply and exhaust of the process gas to the reaction space 32 are respectively controlled to maintain a high pressure.

After that, in the period T5, the exhaust of the first high pressure control unit 700 for the protective space 22 of the outer tube 20 and the second high pressure control unit 720 for the reaction space 32 of the inner tube 30 Exhaust proceeds until the outer tube 20 and the inner tube 30 reach atmospheric pressure, respectively.

In this case, the supply of the inert gas of the first gas supply unit 600 and the supply of the process gas of the second gas supply unit 620 may be maintained in a small amount or blocked for purging.

After that, in a period T6 , the inert gas supply of the first gas supply unit 600 and the exhaust of the first high pressure control unit 700 are controlled in order to maintain the atmospheric pressure with respect to the protective space 22 of the outer tube 20 .

In addition, the process gas supply of the second gas supply unit 620 and the exhaust of the second high pressure control unit 720 are controlled in order to maintain the normal pressure in the reaction space 32 of the inner tube 30 .

At this time, the process gas supplied to the inner tube 30 may use nitrogen to dilute hydrogen.

After that, in the period T7, as in the period T1, the atmospheric pressure with respect to the protective space 22 of the outer tube 20 is maintained, and slow pumping of the reaction space 32 of the inner tube 30 is performed, and during the period T8 Low pressure is maintained.

Since the period T7 operates in the same manner as the period T1, a redundant description thereof will be omitted.

According to an embodiment of the present invention, pressurization and pressure reduction may be included in the period T3 to period T7 or period T9 to period T13 of FIG. 11 , that is, the transformation process may be performed.

Therefore, in the embodiment of the present invention, the properties of the thin film can be improved by allowing the reaction space to have a high pressure and then to have a low pressure again before, during, or after the thin film is formed.

That is, in this embodiment, when the low-pressure process is performed in the reaction space 32 by the driving of the inner pumping unit 740 in the outer exhaust unit 791, the pressure in the protective space 22 is maintained at normal pressure or higher than the normal pressure. The protective space can be vented to keep it high.

At this time, the first high pressure control valve 700, based on the pressure of the inner exhaust line 722, to maintain a high pressure with a uniform difference than the pressure of the inner exhaust line 722, the displacement amount of the outer exhaust gas 702 can be adjusted.

And, in the embodiment of the present invention, the second internal pressure (PI) of the reaction space 32 of the inner tube 30 has a low pressure lower than the normal pressure as in the period T14 for the post-treatment after completing the above process. and post-treatment can be performed in a low pressure state.

In the post-processing period described above, the embodiment of the present invention may perform a leak check and release of clamping between the cap flange 70 and the inner manifold 60 .

According to the embodiment of the present invention as described above, it is possible to implement a substrate processing apparatus that performs a pressure transformation process of depressurizing after pressurization in order to improve the characteristics of the thin film.

In addition, according to the embodiment of the present invention, it is possible to prevent damage to the inner tube 30 and to prevent leakage, which may occur in the above-described transformation process, to secure the reliability of the substrate processing apparatus, process efficiency and process Various effects such as improving the yield can be expected.

In addition, as another embodiment of the pressure control method according to the present invention, as shown in FIG. 12 , when a low pressure process is performed in the reaction space 32 , the first internal pressure PO of the protective space 22 is removed. 2It can be pumped to be maintained higher than the internal pressure (PI) and lower than the atmospheric pressure.

Since the pressure control method includes a case in which the first internal pressure PO of the protective space 22 is in a low pressure state lower than the normal pressure, the second embodiment of FIGS. 6, 7, 9, and 10 described above , can be implemented through the gas utility of the third embodiment, the fifth embodiment, and the sixth embodiment.

Meanwhile, in this process, the second internal pressure PI may maintain a constant pressure difference ΔP than the first internal pressure PO.

Since the reaction space 32 is at a high pressure, it is the same as in the above-described embodiment, so only the differences will be described below, and the pressure control method of FIG. 11 may be equally applied to the omitted description.

In addition, the outer pumping unit 760, when the low-pressure process is performed in the reaction space 32 by the driving of the inner pumping unit 740, the pressure in the protective space 32 is lower than the normal pressure and the reaction space 32 The protective space 22 may be pumped to be maintained higher than the pressure of

At this time, the first main pumping valve V11 is a pumping amount of the outer pumping line 762 to maintain a high pressure with a uniform difference than the pressure of the inner pumping line 742 based on the pressure of the inner pumping line 742 . can be adjusted.

That is, as shown in FIG. 12 , in each embodiment of the present invention described above, when the pressure of the reaction space 32 is adjusted to high or low pressure through the inner exhaust unit 792 and the inner pumping unit 740 . , respectively, through the outer exhaust unit 791 and the outer pumping unit 760, the pressure of the protective space 22 may be maintained throughout the entire process to be greater than the pressure of the reaction space 32 while maintaining ΔP constant.

Since the above has only been described with respect to some of the preferred embodiments that can be implemented by the present invention, as noted, the scope of the present invention should not be construed as being limited to the above embodiments, and It will be said that the technical idea and the technical idea accompanying the fundamental are all included in the scope of the present invention.

10: heater 20: outer tube
30: inner tube 40: ring type cover
50: outer manifold 60: inner manifold
70: cap flange 80: boat
90: rotation plate 100: thermocouple protection tube

Claims (18)

an outer tube having a protective space therein and having a first inlet formed therein; an inner tube having a reaction space formed therein and a second inlet formed at a lower portion thereof, a portion of which is accommodated in the outer tube, and a portion formed with the second inlet protruding to the outside of the outer tube; an outer manifold supporting the lower portion of the outer tube and forming a first inner space connected to the protective space, and having an outer gas supply port and an outer gas exhaust port formed around a side wall; an inner manifold supporting a lower portion of the inner tube and forming a second inner space connected to the protective space, and having an inner gas supply port and an inner gas exhaust port formed around a side wall; A substrate including a gas utility for controlling pressures in the reaction space and the protective space so as to perform a pressure transformation process including a high-pressure process higher than normal pressure and a low-pressure process lower than normal pressure with respect to the plurality of substrates introduced into the reaction space As a processing device,
The gas utility is
an outer exhaust unit including an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space;
an inner exhaust unit including an inner exhaust line connecting the inner gas exhaust port and an external exhaust device, and a second high pressure control unit installed on the inner exhaust line to control the pressure of the reaction space;
Of the inner exhaust line, branched from the front end of the second high pressure control unit and connected to a vacuum pump connected to the external exhaust device, an inner pumping unit configured to pump the reaction space to control the pressure in the reaction space to a pressure lower than normal pressure A substrate processing apparatus, characterized in that. an outer tube having a protective space therein and having a first inlet formed therein; an inner tube having a reaction space formed therein and a second inlet formed at a lower portion thereof, a portion of which is accommodated in the outer tube, and a portion formed with the second inlet protruding to the outside of the outer tube; an outer manifold supporting the lower portion of the outer tube and forming a first inner space connected to the protective space, and having an outer gas supply port and an outer gas exhaust port formed around a side wall; an inner manifold supporting a lower portion of the inner tube and forming a second inner space connected to the protective space, and having an inner gas supply port and an inner gas exhaust port formed around a side wall; A substrate including a gas utility for controlling pressures in the reaction space and the protective space so as to perform a pressure transformation process including a high-pressure process higher than normal pressure and a low-pressure process lower than normal pressure with respect to the plurality of substrates introduced into the reaction space As a processing device,
The gas utility is
The outer gas exhaust port and the external exhaust device are connected, and the pressure of the protective space is controlled during the normal pressure or high pressure process for the reaction space, and the protective space is pumped during the low pressure process for the reaction space to the pressure of the protective space. And an outer gas utility unit for controlling the pressure lower than the normal pressure;
The inner gas exhaust port and the external exhaust device are connected, and the pressure of the reaction space is controlled during the normal pressure or high pressure process for the reaction space, and the reaction space is pumped by pumping the reaction space during the low pressure process for the reaction space. Substrate processing apparatus, characterized in that it comprises an inner gas utility unit for controlling the pressure lower than the normal pressure. 3. The method according to claim 2,
The inner gas utility unit,
an inner exhaust unit including an inner exhaust line connecting the inner gas exhaust port and an external exhaust device, and a second high pressure control unit installed on the inner exhaust line to control the pressure of the reaction space;
and an inner pumping part branched from the front end of the second high pressure control part of the inner exhaust line and connected to a vacuum pump connected to the external exhaust device, and controlling the pressure in the reaction space to a pressure lower than normal pressure. Device. 4. The method according to claim 3,
The outer gas utility unit,
an outer exhaust unit including an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space;
Of the outer exhaust line, branched from the front end of the first high-pressure control unit and connected to the vacuum pump, an outer pumping unit for pumping the protection space to control the pressure of the protection space to be lower than normal pressure and higher than the pressure of the reaction space. A substrate processing apparatus, characterized in that. 4. The method according to claim 3,
The outer manifold,
It further comprises an outer pumping port formed around the side wall,
The outer gas utility unit,
an outer exhaust unit including an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space;
Substrate processing apparatus, characterized in that it further comprises an outer pumping part connecting the outer pumping port and the vacuum pump, and pumping the protective space to control the pressure of the protective space to be lower than normal pressure and higher than the pressure of the reaction space. 3. The method according to claim 2,
The inner manifold is
Further comprising an inner pumping port formed around the side wall,
The inner gas utility is
an inner exhaust unit including an inner exhaust line connecting the inner gas exhaust port and the external exhaust device, and a second high pressure controller installed on the inner exhaust line to control the pressure of the reaction space;
and an inner pumping unit connecting the inner pumping port and the vacuum pump, and pumping the reaction space to control the pressure in the reaction space to a pressure lower than normal pressure. 7. The method of claim 6,
The outer gas utility unit,
an outer exhaust unit including an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space;
Branched from the front end of the first high-pressure control part of the outer exhaust line, the vacuum pump is connected, and the protective space is pumped to control the pressure of the protective space to be lower than normal pressure and higher than the pressure of the reaction space. A substrate processing apparatus, characterized in that. 7. The method of claim 6,
The outer manifold,
It further comprises an outer pumping port formed around the side wall,
The outer gas utility unit,
an outer exhaust unit including an outer exhaust line connecting the outer gas exhaust port and the external exhaust device, and a first high pressure control unit installed on the outer exhaust line to control the pressure in the protective space;
and an outer pumping part connecting the outer pumping port and the vacuum pump, and pumping the protective space to control the pressure of the protective space to be lower than normal pressure and higher than the pressure of the reaction space. 9. The method according to any one of claims 1, 4, 5, 7 and 8,
The first high-pressure control unit,
A first high-pressure exhaust valve installed on the outer exhaust line to control the exhaust of the protective space, the protective space installed between the first high-pressure exhaust valve and the external exhaust device, and exhausted through the outer exhaust line Including a first high pressure control valve for controlling the displacement of
The second high-pressure control unit,
a second high-pressure exhaust valve installed on the inner exhaust line to control the exhaust of the reaction space, and a second high-pressure exhaust valve installed between the second high-pressure exhaust valve and the external exhaust device and exhausted through the inner exhaust line of the reaction space and a second high-pressure control valve for controlling an exhaust amount. 6. The method according to any one of claims 1, 3 to 5,
The inner pumping unit,
an inner vacuum pumping line connecting the front end of the second high pressure control unit and the vacuum pump among the inner exhaust lines;
a second low-pressure regulating valve installed on the inner vacuum pumping line to control the flow to the vacuum pump;
and a second main pumping valve installed between the second low-pressure shut-off valve and the vacuum pump to control the pressure of the reaction space to be maintained at a pressure lower than normal pressure. 9. The method according to any one of claims 6 to 8,
The inner pumping unit,
an inner vacuum pumping line connecting the inner pumping port and the vacuum pump;
a second low-pressure regulating valve installed on the inner vacuum pumping line to control the flow to the vacuum pump;
and a second main pumping valve installed between the second low-pressure shut-off valve and the vacuum pump to control the pressure of the reaction space to be maintained at a pressure lower than normal pressure. 8. The method according to claim 4 or 7,
The outer pumping unit,
an outer vacuum pumping line connecting the front end of the first high pressure control unit and the vacuum pump among the outer exhaust lines;
a first low-pressure regulating valve installed on the outer vacuum pumping line to control the flow to the vacuum pump;
and a first main pumping valve installed between the first low-pressure shut-off valve and the vacuum pump to control the pressure in the protection space to be lower than normal pressure and higher than the reaction space. 9. The method according to claim 5 or 8,
The outer pumping unit,
an outer vacuum pumping line connecting the outer pumping port and the vacuum pump;
a first low-pressure regulating valve installed on the outer vacuum pumping line to control the flow to the vacuum pump;
and a first main pumping valve installed between the first low-pressure shut-off valve and the vacuum pump to control the pressure in the protection space to be lower than normal pressure and higher than the reaction space. 10. The method of claim 9,
The outer exhaust unit,
A first safety line connected to both ends of the first high pressure control valve, and a first relief valve installed on the first safety line,
The inner exhaust unit,
and a second safety line and the second safety line connected to both ends of the second high pressure control valve, and a second relief valve installed on the second safety line. 13. The method of claim 12,
The outer pumping unit,
A first slow pumping line connected to both ends of the first main pumping valve and a first slow pumping valve installed on the first slow pumping line to control a pumping amount for pressure reduction. Device. 9. The method according to any one of claims 1, 4, 5, 7 and 8,
The outer exhaust unit,
When the high-pressure process is performed in the reaction space by driving the inner exhaust unit, the protective space is exhausted so that the pressure of the protective space is maintained higher than the pressure of the reaction space. 9. The method according to any one of claims 1, 4, 5, 7 and 8,
The outer exhaust unit,
When the low-pressure process is performed in the reaction space by the driving of the inner pumping unit, the protective space is exhausted so that the pressure of the protective space is maintained at normal pressure or higher than the normal pressure. 9. The method according to any one of claims 4, 5, 7 and 8,
The outer pumping unit,
When the low-pressure process is performed in the reaction space by the driving of the inner pumping unit, the protective space is pumped so that the pressure of the protective space is lower than normal pressure and higher than the pressure of the reaction space.

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