KR20220000445A - Apparatus and method for manufacturing a display device - Google Patents

Abstract

Disclosed are an apparatus and a method for manufacturing a display device according to the present invention. The present invention includes: a plurality of laser generating parts; a first measuring part for measuring a part of the laser emitted from each laser generating part; an optical system for generating one process laser by receiving the laser emitted from each laser generating part; a second measuring part for measuring the process laser emitted from the optical system; and a control part for controlling a time point at which the laser is emitted from each of the laser generating parts based on the laser measured by the first measuring part and the process laser measured by the second measuring part. Therefore, it is possible to generate a laser identical or similar to a designed laser through real-time monitoring and perform a process.

Description

Apparatus and method for manufacturing a display device

Embodiments of the present invention relate to an apparatus and method, and more particularly, to an apparatus and method for manufacturing a display device.

Electronic devices based on mobility are widely used. In addition to small electronic devices such as mobile phones, tablet PCs have recently been widely used as mobile electronic devices.

Such a mobile electronic device includes a display device to provide visual information such as an image or video to a user in order to support various functions. Recently, as other components for driving the display device are miniaturized, the proportion of the display device in electronic devices is gradually increasing, and a structure that can be bent to have a predetermined angle in a flat state is being developed.

The display device as described above may include various thin film transistors. In this case, the performance or image quality of the display device may be determined according to how precisely the thin film transistor is manufactured.

In general, it is necessary to crystallize a silicon layer before manufacturing a thin film transistor of a display device. The degree of crystallization of the silicon film may be determined according to a change in the intensity of a laser used when the silicon film is crystallized. However, since a laser used for crystallization of the silicon film is used by combining a plurality of lasers, it is difficult to control and it may be quite difficult to generate a laser having the same or similar shape as the designed one. SUMMARY Embodiments of the present invention provide an apparatus for manufacturing a display device capable of performing a process by generating the same or similar laser to a designed laser through real-time monitoring, and a method for manufacturing the display device.

An embodiment of the present invention includes a plurality of laser generating units, a first measuring unit measuring a portion of the laser emitted from each laser generating unit, and one process laser in which the lasers emitted from each laser generating unit are incident. an optical system generating Disclosed is an apparatus for manufacturing a display device including a control unit for controlling a time point at which the laser is emitted from each laser generating unit.

In this embodiment, the first measurement unit may detect the intensity of the laser over time.

In this embodiment, the second measuring unit may sense the intensity of the process laser over time.

In this embodiment, the control unit may calculate at least one of the parameter of the laser measured by the first measurement unit and the parameter of the process laser measured by the second measurement unit.

In the present embodiment, the parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time.

In this embodiment, the control unit may determine whether the parameter of the process laser is the same as a preset setting value or is included in a setting range.

In this embodiment, when the parameter of the process laser does not correspond to the set value or is out of the set range, the control unit performs the process in each laser generating unit based on the laser parameter measured by the first measuring unit. The timing at which the laser is oscillated can be adjusted again.

In this embodiment, it may further include a stage on which the substrate to which the process laser emitted from the optical system is irradiated is seated.

Another embodiment of the present invention includes the steps of oscillating each of a plurality of lasers at different time points, generating the plurality of lasers as one process laser, measuring the intensity of the process lasers over time; , and calculating a parameter of the process laser based on the intensity of the process laser.

In this embodiment, the method may further include comparing the parameters of the process laser with a preset set value or a preset set range.

In this embodiment, when the parameter of the process laser is different from the set value or out of the set range, the method may further include adjusting the oscillation timing of each laser.

In this embodiment, the step of adjusting the oscillation timing of each laser includes the steps of oscillating each laser, measuring the intensity over time of each laser, and determining the intensity over time of the process laser It may include measuring and determining the oscillation timing of each laser to be different from each other.

In the present embodiment, the adjusting the oscillation timing of each laser may further include calculating the parameters of the respective lasers and the parameters of the process lasers.

In the present embodiment, the parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time.

Another embodiment of the present invention includes the steps of arranging a substrate on a stage, combining a plurality of lasers to irradiate a process laser to the substrate, and measuring the intensity of the process laser over time; Disclosed is a method of manufacturing a display device, which includes calculating parameters of a process laser and adjusting an oscillation timing of each laser based on the parameters of the process laser.

In this embodiment, the step of adjusting the oscillation timing of each laser includes the steps of oscillating each laser, measuring the intensity over time of each laser, and determining the intensity over time of the process laser It may include measuring and determining the oscillation timing of each laser to be different from each other.

In the present embodiment, the adjusting the oscillation timing of each laser may further include calculating the parameters of the respective lasers and the parameters of the process lasers.

In this embodiment, the parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

These general and specific aspects may be embodied using a system, method, computer program, or combination of any system, method, and computer program.

In the display device manufacturing apparatus and the display device manufacturing method according to the exemplary embodiments of the present invention, it is possible to provide a laser optimized for a process. The display device manufacturing apparatus and the display device manufacturing method according to the embodiments of the present invention enable uniform crystallization of the silicon film. The display device manufacturing apparatus and the display device manufacturing method according to the exemplary embodiments of the present invention may prevent defects or damage to the display device during a process.

1 is a front view illustrating an apparatus for manufacturing a display device according to an exemplary embodiment.
FIG. 2 is a block diagram illustrating a control flow of an apparatus for manufacturing the display device illustrated in FIG. 1 .
3 is a flowchart illustrating a control sequence of an apparatus for manufacturing the display device illustrated in FIG. 1 .
FIG. 4 is a graph showing time and intensity of each laser and process laser of the apparatus for manufacturing the display device shown in FIG. 1 .
5 is a plan view illustrating a display device according to an exemplary embodiment.
6 is a cross-sectional view taken along line CC′ of FIG. 5 .

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

In the following embodiments, terms such as first, second, etc. are used for the purpose of distinguishing one component from another, not in a limiting sense.

In the following examples, the singular expression includes the plural expression unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have means that the features or components described in the specification are present, and the possibility that one or more other features or components will be added is not excluded in advance.

In the following embodiments, when it is said that a part such as a film, region, or component is on or on another part, not only when it is directly on the other part, but also another film, region, component, etc. is interposed therebetween. Including cases where there is

In the drawings, the size of the components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

In cases where certain embodiments may be implemented otherwise, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the order described.

1 is a front view illustrating an apparatus for manufacturing a display device according to an exemplary embodiment. FIG. 2 is a block diagram illustrating a control flow of an apparatus for manufacturing the display device illustrated in FIG. 1 . 3 is a flowchart illustrating a control sequence of an apparatus for manufacturing the display device illustrated in FIG. 1 . FIG. 4 is a graph showing time and intensity of each laser and process laser of the apparatus for manufacturing the display device shown in FIG. 1 .

1 to 4 , the apparatus 100 for manufacturing a display device includes a laser generating unit 110 , a laser guide unit 130 , a measuring unit 120 , an optical system 140 , and a process laser measuring unit 160 . , a process laser guide 150 and a stage 170 may be included.

A plurality of laser generator 110 may be provided. In this case, the plurality of laser generators 110 may oscillate lasers having the same shape as each other. Each of these laser generators 110 may oscillate an excimer laser.

The laser generating unit 110 as described above includes a first laser generating unit 110-1, a second laser generating unit 110-2, ... … , and an Nth laser generator 110-N. (Where N is a natural number.) In this case, the first laser generator 110-1 to the Nth laser generator 110-N are each They may be disposed to be spaced apart from each other. The first laser generating unit 110-1 as described above may irradiate the first laser L1, the second laser generating unit 110-2 may irradiate the second laser L2, and the N-th laser The generator 110 -N may irradiate the N-th laser LN. In this case, the first laser (L1) to the N-th laser (LN) may each have the same shape. For example, all parameters of the first laser L1 to the N-th laser LN may be the same. In this case, at least two of the first laser L1 to the N-th laser LN may have different oscillation timings from each other.

The laser guide 130 may pass a part of the laser oscillated by each laser generator 110 and refract a part. In this case, the laser guide unit 130 may include a half mirror. As another embodiment, the laser guide unit 130 may be rotatably arranged to change the path by reflecting the laser oscillating from each laser generating unit 110 . As another embodiment, the laser guide unit 130 may include a half-mirror disposed on a path through which the laser passes, and a mirror that changes the path of a part of the laser whose path is changed by being reflected from the half-mirror. In this case, the laser guide unit 130 may freely change the path of the laser incident to the measurement unit 120 by including a plurality of mirrors.

A plurality of laser guide units 130 as described above may be provided. At this time, each laser guide unit 130 may be arranged to correspond to each laser generator 110 , and may be guided to the measuring unit 120 by varying the path of at least a portion of the laser oscillated by each laser generating unit 110 . have. In this case, each laser guide unit 130 may be arranged in a line in one direction or may be arranged at different positions. Hereinafter, for convenience of description, a case in which the plurality of laser guide units 130 are arranged in a line in one direction will be described in detail.

The plurality of laser guide units 130 include a first laser guide unit 130-1, a second laser guide unit ( 130-2), … … and an N-th laser guide 130-N. In this case, the first laser guide 130-1 to the N-th laser guide 130-N may be arranged in a line as shown in FIG. 1 .

The measurement unit 120 may detect the intensity of the laser guided by the laser guide unit 130 . For example, the measurement unit 120 may include a photodiode or the like. In this case, a plurality of measurement units 120 may be provided. In this case, each measurement unit 120 is disposed to correspond to each laser guide unit 130 , so that the laser guided by each laser guide unit 130 may be incident thereon. Specifically, the plurality of measurement units 120 include a first measurement unit 120-1, a second measurement unit 120-2, ... … and an N-th measurement unit 120 -N.

The optical system 140 may generate one process laser LC by mixing the lasers oscillated by the plurality of laser generators 110 with each other. For example, the optical system 140 may include a beam splitter, a reflection mirror, or the like. The optical system 140 may combine a plurality of lasers with each other by polarizing or changing the path of one laser incident through the structure as described above.

One process laser LC generated by the optical system 140 may be irradiated to the substrate 21 . In this case, the process laser guide 150 may be disposed between the optical system 140 and the substrate 21 . At this time, since the process laser guide unit 150 is the same as or similar to the laser guide unit 130 described above, a detailed description thereof will be omitted.

As shown in FIG. 1 , the optical system 140 and the laser guide unit 130 as described above may be formed separately from each other and disposed to be spaced apart from each other. As another embodiment, the laser guide unit 130 may be integrally formed inside the optical system 140 . That is, the laser guide unit 130 may be disposed inside the optical system 140 , and in this case, the measurement unit 120 may also be disposed inside the optical system 140 . However, hereinafter, for convenience of description, the optical system 140 and the laser guide unit 130 will be described in detail focusing on the case in which the optical system 140 and the laser guide unit 130 are formed separately from each other and disposed to be spaced apart from each other as shown in FIG. 1 .

The process laser measurement unit 160 may measure the intensity of at least a portion of the process laser LC reflected from the process laser guide unit 150 . In this case, since the process laser measurement unit 160 is the same as or similar to each measurement unit 120 described above, a detailed description thereof will be omitted.

The stage 170 may be disposed to face the optical system 140 . In this case, the stage 170 may seat the substrate 21 . In addition, the stage 170 may be formed to be movable. For example, although not shown in FIG. 1 , stage 170 may be capable of linear movement in the X-axis and/or Y-axis directions of FIG. 1 . In this case, the stage 170 is disposed to be seated on a linear motor arranged in the X-axis and/or Y-axis direction, so that the stage 170 can linearly move according to the operation of the linear motor.

The laser generating unit 110 and the stage 170 as described above may be controlled through the control unit 180 , and the measuring unit 120 and the process laser measuring unit 160 transmit the measured data to the control unit 180 . can The controller 180 may have various forms. For example, the controller 180 may include one of a separately provided mobile phone, a notebook computer, a portable terminal, or a personal computer. As another embodiment, the controller 180 may include a circuit board.

On the other hand, looking at the operation of the apparatus 100 for manufacturing a display device as described above, after the substrate 21 is placed on the stage 170 , the part to be worked on the substrate 21 and the process laser oscillated by the optical system 140 ( LC), the position of the stage 170 may be changed. In this case, the stage 170 is formed in the form of a UVW stage, so that the position between the substrate 21 and the optical system 140 can be aligned by fine adjustment. In this case, the vision unit 190 may be disposed to photograph the position of the substrate 21 and transmit such an image to the controller 180 . The controller 180 may align the optical system 140 and the substrate 21 with each other based on the position of the substrate 21 .

When the substrate 21 is aligned as described above, the controller 180 can control each laser generator 110 to oscillate the laser. (Step S110 ) At this time, the controller 180 controls each laser generator 110 . ) at which the laser oscillates (or time) can be determined in various forms.

As an embodiment, the time point (or time) at which the laser is oscillated by each laser generator 110 may be a state preset in the controller 180 . In this case, the timing (or time) at which the laser oscillates in each laser generator 110 may be different from each other in at least two or more laser generators 110 . Mainly, this case may be a case of using the apparatus 100 for manufacturing a display device for the first time. Thereafter, the process may be performed by proceeding from step S310, which will be described later.

For example, when 6 lasers are used based on FIG. 3 , the oscillation time T1 of the first laser L1 and the second laser L2 are based on the oscillation time T3 of the third laser L3. The oscillation time T2 of , the oscillation time T5 of the fifth laser L5, and the oscillation time T6 of the sixth laser L6 may be set to be different. However, the oscillation time T4 of the fourth laser L4 may be the same as the oscillation time T2 of the second laser L2 (refer to FIG. 4 ).

As another embodiment, the controller 180 may determine the timing (or time) at which each laser generator 110 oscillates a laser.

Specifically, each laser generator 110 may oscillate a laser. At this time, the timing (or time) at which each laser generator 110 oscillates the laser may be in a state preset in the controller 180 (step S110).

Each measuring unit 120 may measure the intensity of the laser oscillated by each laser generating unit 110 . (Step S120 ) At this time, the controller 180 controls each laser generating unit measured by each measuring unit 120 . The intensity of the laser oscillated in 110 may be stored according to time.

In addition, the process laser measuring unit 160 may measure the intensity of the process laser LC oscillating from the optical system 140 after each laser is incident on the optical system 140. (Step S130) The process laser measuring unit ( 160 may transmit the measured intensity of the process laser LC to the controller 180 . The controller 180 may store the intensity of the process laser LC over time.

Based on the intensity of each laser according to the time stored as described above and the intensity of the process laser LC according to time, the controller 180 controls the parameters of the laser oscillated from each laser generator 110 and the process laser LC. A parameter can be calculated. (Step S150)

At this time, the parameters of each laser and the parameters of the process laser (LC) are the half duration, the second peak intensity value (2 ^nd hump ratio) and It may include at least one of an integral of pluse over time. In this case, the half width value may mean a time period during which the intensity is maintained at 50% or more with respect to the point at which the intensity is maximum. The second peak intensity value may be a ratio between the intensity at the point where the intensity is maximum and the intensity at the point where the intensity is the second highest. For example, the second peak intensity value may be defined as “intensity at a point having the second highest intensity/intensity at a point having the highest intensity”. The integral value of the intensity over time may be the sum of the area of the lower surface of the graph in the intensity graph with time.

The above operation can be repeated several times, and data on the parameters of the process laser (LC) can be calculated for each parameter of each laser and each oscillation time of each laser. (Step S160) In particular, the above operation may be performed while continuously varying the timing at which each laser generator 110 oscillates the laser. For example, each of the plurality of laser generating units 110 except for one of the plurality of laser generating units 110 (in particular, the laser generating unit 110 located in the center among the plurality of laser generating units 110 ) is used as a reference. The laser oscillation timing can be set differently. Specifically, based on the third laser generator (not shown), the first laser generator 110-1 oscillates faster than the third laser generator by 4ns, and the second laser generator 110-2 generates the second laser generator 110-2. 3 It can be controlled to oscillate 1ns later than the laser generator. In addition, the N-th laser generator 110 -N may be controlled to oscillate faster than the third laser generator by 2 ns. The above combination can be freely adjusted based on the point at which the laser is oscillated in the laser generating unit 110 as a reference. At this time, the laser oscillation timing in each laser generating unit 110 may be all different, and some of the plurality of laser generating units 110 and other parts of the plurality of laser generating units 110 have different laser oscillation timings. Different cases are possible. The combination of the laser oscillation timings as described above may be randomly determined through a program preset in the controller 180 . However, as described above, the controller 180 should control at least one of the plurality of laser generators 110 so that the oscillation timing of the laser is different from that of the rest of the plurality of laser generators 110 .

As described above, when the laser generating unit 110 oscillates the laser according to the oscillation timing of the laser, the intensity over time of each laser and the intensity over time of the process laser LC as described above are stored in the controller 180 and each The control unit 180 may calculate and store the parameters of the laser and the parameters of the process laser LC.

The controller 180 may determine whether the parameters of the process laser LC calculated as described above can be used in the actual process (step S200). Specifically, the controller 180 determines whether the calculated parameters of the process laser LC are It can be checked whether the same or corresponding to a preset set value or whether the calculated parameter of the process laser LC exists within a preset set range (step S200). In this case, the controller 180 controls the calculated process laser LC. When all of the parameters of do not correspond to the preset setting value or are out of the setting range, the above steps S120 to S160 may be performed while changing the oscillation timing of each laser again. In this case, the oscillation timing of each laser may be determined as a combination different from the combination performed above.

On the other hand, the controller 180 may correspond the calculated parameter of the process laser LC to a preset set value or a set range. For example, the controller 180 stores whether there is a combination of the oscillation timing of each laser corresponding to the half width value of the process laser LC required for a preset process, the second peak intensity value, and the integral value of the intensity over time. It can be compared with the parameters of the process laser (LC). In this case, the controller 180 may select a combination of the time points at which the laser is oscillated by each laser generator 110 when the stored fixed laser parameters are the same as the preset setting values. In another embodiment, the controller 180 may set the half-width value, the second peak intensity value, and the integral value of the intensity over time among the stored fixed laser parameters, respectively, the preset half-width range and the set second peak intensity value range set in the controller 180, respectively. And it is possible to select a combination of the time points at which the laser is oscillated by each laser generator 110 corresponding to the range of the integral value of the intensity according to the set time. (Step S310)

When the selection of the combination of the laser oscillation timing points in each laser generator 110 is completed as described above, the controller 180 operates each laser generator 110 to oscillate each laser at each determined laser oscillation timing. can be controlled. (Step S320)

When each laser generating unit 110 operates as described above, each laser passes through the optical system 140 , is converted into a process laser LC, and may be irradiated to the substrate 21 . The process laser LC may perform a crystallization process on the substrate 21 .

When the process is performed as described above, each measuring unit 120 and the process laser measuring unit 160 may calculate the intensity of each laser and the intensity of the process laser LC in real time. The intensity of each laser measured by each measuring unit 120 and the intensity of the process laser LC measured by the process laser measuring unit 160 may be transmitted to the controller 180 . The controller 180 may calculate the parameters of the process laser LC based on the intensity of the laser and the intensity of the process laser LC. (Step S330)

Meanwhile, the controller 180 may compare the parameters of the process laser LC calculated during the process as described above and a preset set value or compare it with a preset set range. (Step S400) At this time, the controller 180 ) can compare all elements of the parameters of the process laser (LC) with individually preset set values or preset set ranges. In this case, the set value and the set range may be stored in the controller 180 to be distinguished from each other for each of all elements of the parameters of the process laser LC.

The controller 180 is configured to oscillate each laser according to the currently set oscillation time when any one of all elements of the parameter of the process laser LC is different from a preset setting value or out of a preset setting range. can be controlled and the operation of re-calculating the parameters of the process laser (LC) while varying the oscillation time of each laser can be performed. For example, in step S120 described above, step S160 may be performed again. Thereafter, as in step S200 , the controller 180 may determine whether a process laser LC corresponding to the process laser LC parameter corresponding to the set value or calculated within the set range exists. Thereafter, when there is a process laser LC having a parameter corresponding to the set set value or included within the set range, the control unit 180 may determine a combination of oscillation timings of each laser capable of providing the process laser LC. have. When the combination of the oscillation timings of the lasers is determined, the controller 180 may control each laser generator 110 to correspond to the oscillation timings of each laser. Thereafter, steps S320 and S330 described above may be performed, and step S400 may be performed again.

The controller 180 compares the parameter of the process laser LC calculated as described above with a preset setting value or compares the parameter of the process laser LC calculated by comparing with a preset setting range to the preset setting value (same as the preset value) ) or if it exists within the set range, the process can be continued by maintaining the existing conditions. (Step S510)

During the process as described above, the controller 180 may calculate the parameters of the process laser LC based on the intensity measured by the measuring unit 120 and the process laser measuring unit 160 (step S520).

As described above, while the process is in progress, the controller 180 can determine whether the process is complete (step S600). For example, when a predetermined time elapses after irradiating the process laser LC, the controller 180 may It can be considered that this has been completed. As another embodiment, the controller 180 may determine that the process has been completed according to a signal input by the user from the outside. As another embodiment, the controller 180 may determine whether the process is terminated by measuring the area of a specific area, the luminance of the image, etc. in the image captured by the vision unit 190 . In this case, the method by which the controller 180 determines the end of the process is not limited to the above, and may determine the end of the process in various ways.

It is determined that the process has not been completed, and the controller 180 may determine whether the parameters of the process laser LC correspond to a preset set value or whether it is within a preset set range. (Step S400)

The above operations can be continuously repeated in the process performed through the process laser (LC). In particular, in the case of the above, when each laser generating unit 110 is used for a certain period of time, the internal temperature rises or each laser generating unit 110 oscillates due to a problem with internal parts, etc. The parameters of the laser can be varied. In this case, since a plurality of lasers are combined with each other to generate one process laser LC, when at least one parameter of the plurality of lasers varies, the parameters of the process laser LC may vary. In particular, when a plurality of lasers are combined with each other, the time for which the maximum value of the intensity of the process laser LC used in the process is maintained, the degree of intensity change in the maximum value part, etc. may vary. In the above case, each laser generating unit 110 must be replaced in order to provide a certain type of process laser LC. However, since the parameters of the laser oscillating in real time vary according to the assembly tolerance, the process environment, etc. in addition to the above cases, each laser generating unit 110 provides a process laser (LC) suitable for the process through replacement of each laser generating unit 110 . It can be difficult to create.

However, through the above operation, the parameters of the process laser (LC) are continuously monitored, and when the parameters of the process laser (LC) are changed based on the monitoring result, the combination of the oscillation times of a plurality of lasers is changed to be suitable for the process. It is possible to provide the process laser LC to the substrate 21 .

In addition, when a plurality of lasers oscillate at the same time, the intensity of the process laser (LC) as described above due to various causes such as the installation environment, location, accuracy of internal parts, and internal temperature rise of each laser generating unit 110 . In addition to not being uniform at the maximum value, there may be cases in which the intensity of the process laser (LC) cannot be maintained over a certain value for a time required for the process.

However, as described above, by making the oscillation timing of at least one laser among the plurality of lasers different from the rest of the plurality of lasers, it is possible to generate the process laser LC having parameters optimized for the process.

In particular, when the oscillation timing of at least one of the plurality of lasers is different from the rest of the plurality of lasers as described above, as shown in FIG. 4 , the intensity is uniform and the intensity does not change rapidly at the maximum value of the intensity of the process laser (LC). It is possible to create a process laser (LC) that does not

Accordingly, the display device manufacturing apparatus 100 and the display device manufacturing method can minimize defects or damage caused by the process laser LC. The display device manufacturing apparatus 100 and the display device manufacturing method can perform an accurate and precise crystallization process.

5 is a plan view illustrating a display device according to an exemplary embodiment. FIG. 6 is a cross-sectional view taken along line C-C′ of FIG. 5 .

5 to 6 , in the display device 20 , a display area DA and a non-display area NDA outside the display area DA may be defined on the substrate 21 . A sub-pixel Px may be disposed in the display area DA, and a power line (not shown) may be disposed in the non-display area. Also, the pad part PA may be disposed in the non-display area.

The display device 20 may include a display substrate (D) and a sealing member (not shown) disposed on the display substrate (D). In this case, the sealing member may include a sealing part disposed on the display substrate D, and an encapsulation substrate (not shown) connected to the sealing part and disposed to face the substrate 21 . In another embodiment, the sealing member may include a thin film encapsulation layer (E) for shielding at least a portion of the display substrate (D).

The display substrate D as described above may include a substrate 21 , a thin film transistor TFT and an organic light emitting diode 28 (OLED) disposed on the substrate 21 .

The substrate 21 may include glass or a polymer resin. Polymer resin is polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate (polyethyelenen napthalate), polyethylene terephthalate (polyethyeleneterepthalate), polyphenylene sulfide (polyphenylene sulfide), polya It may include a polymer resin such as polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The substrate 21 including the polymer resin may have flexible, rollable, or bendable properties. The substrate 21 may have a multilayer structure including a layer including the above-described polymer resin and an inorganic layer (not shown).

A thin film transistor TFT is formed on the substrate 21 , a passivation film 27 is formed to cover the thin film transistor TFT, and an organic light emitting device 28 may be formed on the passivation film 27 . have.

A buffer layer 22 made of an organic compound and/or an inorganic compound is further formed on the upper surface of the substrate 21 , and may be formed of SiO _x (x≥1) or SiN _x (x≥1).

After the active layer 23 arranged in a predetermined pattern is formed on the buffer layer 22 , the active layer 23 is buried by the gate insulating layer 24 . The active layer 23 has a source region 23A and a drain region 23C, and further includes a channel region 23B therebetween.

The active layer 23 may be formed to contain various materials. For example, the active layer 23 may contain an inorganic semiconductor material such as amorphous silicon or crystalline silicon. As another example, the active layer 23 may contain an oxide semiconductor. As another example, the active layer 23 may contain an organic semiconductor material. However, hereinafter, for convenience of explanation, a case in which the active layer 23 is formed of amorphous silicon will be described in detail.

The active layer 23 may be formed by forming an amorphous silicon film on the buffer layer 22 , crystallizing it to form a polycrystalline silicon film, and patterning the polycrystalline silicon film. In this case, the silicon film may be crystallized by irradiating a process laser to the silicon film using the display device manufacturing apparatus (not shown) shown in FIGS. 1 to 3 . In this case, when the point at which the intensity of the process laser is maximum changes rapidly, the crystallization of the silicon film is not uniformly made, so that stains or a part of the silicon film cannot be crystallized, and thus the quality may be deteriorated. However, by controlling the oscillation timing of each laser as described above, a high-quality process laser is generated, so that the silicon film can be uniformly crystallized.

In the active layer 23, the source region 23A and the drain region 23C are doped with impurities, depending on the type of TFT, such as a driving TFT (not shown) and a switching TFT (not shown).

A gate electrode 25 corresponding to the active layer 23 and an interlayer insulating layer 26 filling the gate electrode 25 are formed on the upper surface of the gate insulating layer 24 .

Then, after forming the contact hole H1 in the interlayer insulating layer 26 and the gate insulating layer 24, the source electrode 27A and the drain electrode 27B are respectively formed on the interlayer insulating layer 26 in the source region ( 23A) and the drain region 23C.

A passivation layer 27 is formed on the thin film transistor formed in this way, and a pixel electrode 28A of the organic light emitting device 28 (OLED) is formed on the passivation layer 27 . This pixel electrode 28A is in contact with the drain electrode 27B of the TFT by a via hole H2 formed in the passivation film 27 . The passivation film 27 may be formed of an inorganic material and/or an organic material, a single layer or two or more layers. It may be formed so that the curvature goes along the curvature. And, the passivation film 27 is preferably formed of a transparent insulator so as to achieve a resonance effect.

After the pixel electrode 28A is formed on the passivation film 27, a pixel defining film 29 is formed of an organic material and/or an inorganic material to cover the pixel electrode 28A and the passivation film 27, and the pixel The electrode 28A is opened so as to be exposed.

Then, the intermediate layer 28B and the counter electrode 28C are formed on the pixel electrode 28A. As another embodiment, the counter electrode 28C may be formed on the entire surface of the display substrate D. As shown in FIG. In this case, the counter electrode 28C may be formed on the intermediate layer 28B and the pixel defining layer 29 . Hereinafter, for convenience of description, the case in which the counter electrode 28C is formed on the intermediate layer 28B and the pixel defining layer 29 will be described in detail.

The pixel electrode 28A functions as an anode electrode and the counter electrode 28C functions as a cathode electrode. Of course, the polarities of the pixel electrode 28A and the counter electrode 28C may be reversed.

The pixel electrode 28A and the counter electrode 28C are insulated from each other by the intermediate layer 28B, and voltages of different polarities are applied to the intermediate layer 28B so that light is emitted from the organic emission layer.

The intermediate layer 28B may include an organic emission layer. As another optional example, the intermediate layer 28B includes an organic emission layer, in addition to a hole injection layer (HIL), a hole transport layer, and an electron transport layer. and at least one of an electron injection layer. The present embodiment is not limited thereto, and the intermediate layer 28B includes an organic light emitting layer and may further include various other functional layers (not shown).

A plurality of intermediate layers 28B as described above may be provided, and the plurality of intermediate layers 28B may form the display area DA. In this case, the plurality of intermediate layers 28B may be disposed to be spaced apart from each other in the display area DA.

Meanwhile, one unit pixel includes a plurality of sub-pixels Px, and the plurality of sub-pixels Px may emit light of various colors. For example, each of the plurality of sub-pixels Px may include a sub-pixel Px emitting red, green, and blue light, and a sub-pixel Px emitting red, green, blue, and white light, respectively. can be provided. Each of the sub-pixels Px may include the pixel electrode 28A, the intermediate layer 28B, and the counter electrode 28C described above, respectively.

The display device manufacturing apparatus 100 may form various layers on the display substrate (D). For example, the apparatus 100 for manufacturing a display device may form at least one of at least one of the intermediate layers 28B on the display substrate D. As shown in FIG. For example, the apparatus 100 for manufacturing a display device may form at least one of an organic light emitting layer, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and a functional layer among the intermediate layer 28B.

Meanwhile, the thin film encapsulation layer (E) may include a plurality of inorganic layers or may include an inorganic layer and an organic layer.

The organic layer of the thin film encapsulation layer (E) may include a polymer-based material. Polymer-based materials include polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.) or any combination thereof.

The inorganic layer of the thin film encapsulation layer (E) may include at least one inorganic insulating material of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

The uppermost layer exposed to the outside of the thin film encapsulation layer (E) may be formed of an inorganic layer to prevent moisture permeation to the organic light emitting device.

The thin film encapsulation layer (E) may include at least one sandwich structure in which at least one organic layer is inserted between at least two inorganic layers. As another example, the thin film encapsulation layer (E) may include at least one sandwich structure in which at least one inorganic layer is inserted between at least two organic layers. As another example, the thin film encapsulation layer (E) may include a sandwich structure in which at least one organic layer is inserted between at least two inorganic layers, and a sandwich structure in which at least one inorganic layer is inserted between at least two organic layers. .

The thin film encapsulation layer E may include a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer sequentially from an upper portion of the organic light emitting diode 28 (OLED).

As another example, the thin film encapsulation layer (E) is sequentially formed from an upper portion of the organic light emitting device 28 (OLED), including a first inorganic encapsulation layer, a first organic encapsulation layer, a second inorganic encapsulation layer, a second organic encapsulation layer, and a third It may include an inorganic encapsulation layer.

As another example, the thin film encapsulation layer (E) is sequentially formed from an upper portion of the organic light emitting device 28 (OLED), including a first inorganic encapsulation layer, a first organic encapsulation layer, a second inorganic encapsulation layer, and the second organic encapsulation layer. , a third inorganic encapsulation layer, a third organic encapsulation layer, and a fourth inorganic layer.

A metal halide layer including LiF may be further included between the organic light emitting diode 28 (OLED) and the first inorganic encapsulation layer. The metal halide layer may prevent the organic light emitting diode 28 (OLED) from being damaged when the first inorganic encapsulation layer is formed by sputtering.

The first organic encapsulation layer may have a smaller area than the second inorganic encapsulation layer, and the second organic encapsulation layer may also have a smaller area than the third inorganic encapsulation layer.

When a plurality of inorganic layers are provided as described above, the inorganic layers may be deposited in direct contact with each other in the edge region of the display device 20 , and the organic layers may not be exposed to the outside.

Accordingly, the display device 20 may display a uniform and clear image.

As described above, the present invention has been described with reference to one embodiment shown in the drawings, but it will be understood that various modifications and variations of the embodiments are possible therefrom by those of ordinary skill in the art. Accordingly, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

20: display device
100: device for manufacturing a display device
110: laser generator
120: measurement unit
130: laser guide
140: optical system
150: process laser guide
160: process laser measurement unit
170: stage
180: control unit
190: vision part

Claims (18)

a plurality of laser generators;
a first measuring unit measuring a portion of the laser emitted from each laser generating unit;
an optical system in which the laser emitted from each laser generating unit is incident to generate one process laser;
a second measuring unit measuring the process laser emitted from the optical system; and
Manufacturing of a display device comprising a; a control unit that adjusts a time point at which the lasers are emitted from each of the laser generators based on the lasers measured by the first measurement unit and the process lasers measured by the second measurement unit Device. The method of claim 1,
The first measuring unit is an apparatus for manufacturing a display device that senses the intensity of the laser according to time. The method of claim 1,
The second measuring unit is an apparatus for manufacturing a display device that senses the intensity of the process laser according to time. The method of claim 1,
The control unit is configured to calculate at least one of a parameter of the laser measured by the first measurement unit and a parameter of the process laser measured by the second measurement unit. 5. The method of claim 4,
The parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time. 5. The method of claim 4,
The control unit is an apparatus for manufacturing a display device to determine whether the parameter of the process laser is the same as a preset set value or is included in a set range. 7. The method of claim 6,
When the parameter of the process laser does not correspond to the set value or is out of the set range, the control unit determines a time point at which each laser generating unit oscillates the laser based on the parameter of the laser measured by the first measuring unit. A device for manufacturing a display device that adjusts again. The method of claim 1,
and a stage on which the substrate to which the process laser emitted from the optical system is irradiated is seated. oscillating each of the plurality of lasers at different time points;
generating the plurality of lasers as one process laser;
measuring the intensity over time of the process laser; and
and calculating a parameter of the process laser based on the intensity of the process laser. 10. The method of claim 9,
Comparing the parameter of the process laser with a preset set value or a preset set range; 11. The method of claim 10,
and adjusting the oscillation timing of each laser when the parameter of the process laser is different from the set value or out of the set range. 12. The method of claim 11,
The step of adjusting the oscillation timing of each laser is,
oscillating each of the lasers;
measuring the intensity over time of each laser;
measuring the intensity over time of the process laser; and
and determining the oscillation timings of the respective lasers to be different from each other. 13. The method of claim 12,
The step of adjusting the oscillation timing of each laser is,
Calculating the parameters of each of the lasers and the parameters of the process laser; 10. The method of claim 9,
The parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time. placing the substrate on the stage; and
irradiating a process laser to the substrate by combining a plurality of lasers;
measuring the intensity over time of the process laser;
calculating parameters of the process laser; and
and adjusting the oscillation timing of each laser based on the parameters of the process laser. 16. The method of claim 15,
The step of adjusting the oscillation timing of each laser is,
oscillating each of the lasers;
measuring the intensity over time of each laser;
measuring the intensity over time of the process laser; and
and determining the oscillation timings of the respective lasers to be different from each other. 17. The method of claim 16,
The step of adjusting the oscillation timing of each laser is,
Calculating the parameters of each of the lasers and the parameters of the process laser; 16. The method of claim 15,
The parameter may include at least one of a plus duration, a second peak intensity value (2 ^nd hump ratio), and an integral of pluse intensity over time.

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