JP2009059861A - Annealing method and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein it is difficult to perform uniform annealing in a substrate surface through annealing processing, by using a thermal conversion film converting laser light into heat, because there is film thickness distribution of thermal conversion film. <P>SOLUTION: In annealing method of annealing an annealed region in the substrate surface which has the thermal conversion layer, converting the laser light into heat, formed on the annealed region, performed in sequence are a "determination of laser light output of each region" stage of predetermining the output of laser light with which optimum annealing quality is obtained in each of the regions obtained, by dividing the annealed region; a "determination of a laser drive current value" stage of predetermining a laser drive current value satisfying the laser output; and a "control over the laser drive current value" stage of controlling the laser drive current value to a constant value or a "control over a laser output value" stage of controlling the laser output to constant value, by adjusting the laser drive current value for each region are performed, when annealing processing is performed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an annealing method and a method for manufacturing a semiconductor device using the annealing method.

  In the laser annealing treatment, the amorphous silicon film formed on the substrate can be converted into a polycrystalline silicon film by irradiating and heating a laser beam. At this time, in order to efficiently use the irradiation energy of the laser light, a heat conversion layer is positively used (see, for example, Patent Document 1). The heat conversion layer is formed, for example, as a thin film on an amorphous silicon film by sputtering or chemical vapor deposition (CVD) with a metal having a high melting point.

  The heat conversion efficiency by laser light irradiation depends on the film thickness of the heat conversion layer and the output of the laser light per unit time and unit area. If the thermal conversion efficiency of laser light irradiation cannot be kept constant, the quality (for example, electrical characteristics) of the polycrystalline silicon film formed by the annealing process will vary.

  In general, the thickness of a thin film formed on a substrate varies from one production lot to another, so it is necessary to change the conditions for annealing treatment for each production lot.

  When the above-described thin film forming method is used, even if the film thickness is controlled with high accuracy, an in-plane variation of about several percent to several tens of percent occurs within the substrate surface. For this reason, when trying to keep the heat conversion efficiency constant, it is necessary to adjust and control the laser output per unit time and unit area according to the film thickness of the heat conversion layer. Changing the scan speed to control the laser output per unit time is effective when the laser forms a single line by one scan, but the laser uses multiple lines to improve tact. When formed (multi-beam, multi-laser), the film thickness of the thermal conversion layer also has a distribution in the direction perpendicular to the scan direction, so adjust so that the same result can be obtained in all lines. Was difficult. When trying to control the size of the aperture stop in the optical system in order to adjust the laser output per unit area, it is not easy to anneal uniformly because there is a restriction on the control speed. Further, when the aperture position is slightly shifted in the optical axis direction, there is a problem that the light intensity distribution on the annealing target is not uniform due to the diffracted light.

Japanese Patent Laid-Open No. 62-1323311

  The problem to be solved is that in the annealing process using a heat conversion film that converts laser light into heat, there is a film thickness distribution of the heat conversion film, and uniform annealing within the substrate surface is difficult.

  The present invention enables uniform annealing in the substrate plane.

  According to the annealing method of the present invention, in the annealing method in which a heat conversion layer for converting laser light into heat is formed on the annealing region in the substrate surface, and annealing is performed on the annealing region, each annealing region is divided into each area. The output determining step for determining the laser beam output in advance, the drive current value determining step for determining the laser drive current value corresponding to the laser beam output in advance, and then performing the annealing process, A drive current value control step for adjusting the laser drive current value for each area and controlling the laser drive current value to be kept constant, or an output value control step for controlling the laser light output to be kept constant It is characterized by performing.

  In the annealing method of the present invention, the laser beam output or the laser driving current value at which the optimum annealing quality is obtained is determined in each area obtained by dividing the region to be annealed, so that a uniform annealing process is performed on the substrate surface. Will come to be.

  According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, wherein a heat conversion layer for converting laser light into heat is formed on an annealing region, and the annealing step includes annealing in the annealing region. An output determining step for determining laser beam output in advance for each area obtained by dividing the annealing region; and a drive current value determining step for determining in advance a laser drive current value corresponding to the laser beam output; Next, when performing an annealing process, a laser drive current value is adjusted for each area, and a drive current value control step for controlling the laser drive current value to be a constant value, or a laser light output is performed. An output value control process is performed to control the output so as to be kept constant.

  In the method for manufacturing a semiconductor device of the present invention, annealing is performed using the annealing method of the present invention, so that a uniform annealing process is performed on the substrate surface.

  In the annealing method of the present invention, uniform annealing is performed on the substrate surface, so that the quality and yield are improved. If conditions are set by the annealing apparatus, it is not necessary to set conditions for the film forming apparatus. Since only the drive current is adjusted, the throughput is not affected. Even if the number of laser irradiation units increases, it can be dealt with by expanding the same technology.

  In the method for manufacturing a semiconductor device according to the present invention, since uniform annealing is performed on the substrate surface, quality and yield are improved.

  First, an example of a laser annealing processing apparatus for carrying out the annealing method and the semiconductor device manufacturing method of the present invention will be described with reference to the schematic configuration perspective view of FIG.

  As shown in FIG. 2, the laser annealing apparatus 1 is a multi-head type laser annealing apparatus. A table Y-axis moving unit 21 is provided on the surface plate 11, and a table X-axis moving unit 22 is provided above the table Y-axis moving unit 21. On the table X-axis moving unit 22, a work chuck table 24 is installed via a table θ-axis moving unit 23. That is, the work chuck table 24 is movable in the θ direction by the table θ-axis moving unit 23, and the table θ-axis moving unit 23 is movable in the X-axis direction by the table X-axis moving unit 22. The table X-axis moving unit 22 is movable in the Y-axis direction by the table Y-axis moving unit 21. Accordingly, the substrate 51 placed on the work chuck table 24 is movable in the X axis direction, the Y axis direction, and the θ direction.

  On the surface plate 11, a so-called gate-shaped support portion 31 is installed in a direction orthogonal to the table X-axis moving mechanism 21, and the beam portion 32 of the support portion 31 is parallel to the Y-axis direction. A guide rail 33 is provided, and a head moving unit 34 for moving the plurality of laser irradiation units 35 is provided along the guide rail 33. Therefore, the laser irradiation unit 35 can be moved in parallel with the Y-axis direction by the head moving unit 34.

  In the laser annealing apparatus 1, the substrate 51 to be annealed is fixed on the work chuck table 24. As the table θ-axis moving unit 23 moves on the table X-axis moving unit 22, the substrate 51 performs a linear motion relative to each laser irradiation unit 35. Here, for example, the glass substrate of the third generation 550 mm × 650 mm is moved at 200 mm / s. At this time, if laser light is irradiated from the laser irradiation unit 35 at a designated timing, polycrystalline silicon is formed in a line shape on the substrate 51. If the table Y-axis moving unit 21 or the head moving unit 34 repeats the pitch movement in the Y-axis direction, the annealing process can be performed on the entire surface of the substrate 51.

  The heat conversion layer formed on the substrate 51 has a film thickness distribution in the plane of the substrate 51. An example of the film thickness distribution will be described with reference to FIG. 3A is a plan view of the substrate 51, and FIG. 3B is a film thickness distribution diagram in the moving direction of the laser beam.

  As shown in FIG. 3, the heat conversion layer has a film thickness distribution in the plane of the substrate 51. For example, as shown, the film thickness is thin at the center of the substrate 51 and thick at the periphery. Depending on the film forming method, film forming conditions, etc., a film thickness distribution other than the above may be obtained.

  Next, an embodiment (first example) of the annealing method of the present invention will be described with reference to the flowchart shown in FIG. 1, the flowchart shown in FIG. 4, and the plan view showing an example of dividing the substrate shown in FIG. To do.

  First, as shown in FIG. 5, the substrate 51 is divided into an arbitrary number of areas. For example, the area is divided into 13 columns from Aa to Mm in the column direction and 11 rows from 1-1 'to 11-11' in the row direction. The number of divisions is an example, and the number of divisions is determined by the size of the substrate 51, the control accuracy, and the like. For example, the control system may be increased by further fine division.

  In the annealing method of the present invention, as shown in FIG. 1, an “output determination step” is performed in which a laser output capable of obtaining optimum quality in each divided area is determined in advance. Next, a “driving current value determining step” is performed in which a laser driving current value that satisfies the laser output is determined in advance. Next, when performing the annealing process, a “driving current value control step” is performed in which the laser driving current value is adjusted for each area and the laser driving current value is controlled to be a constant value (ACC: Auto Current Control). Do. Alternatively, an “output value control process” is performed in which the laser beam output is controlled to be constant (APC: Auto Power Control). Any one of these controls is performed so that the heat conversion efficiency of the heat conversion layer by laser light irradiation is constant in the surface of the substrate 51. Further, when the laser drive current values are different in adjacent areas in the scanning direction of the laser light, it is desirable to perform control that smoothly changes. As the area at this time is smaller, variation in the thermal conversion efficiency of laser irradiation can be suppressed. Here, the heat conversion efficiency means a conversion heat capacity per unit area and unit time of the heat conversion layer when the heat conversion layer is irradiated with laser light. In other words, it refers to the amount of heat per unit area and unit time given to the underlying silicon layer of the heat conversion layer. If the power source that drives the laser has a storage device, it is possible to record the laser light output of each area in the storage device. In this case, the storage capacity is generally not large, so the number of area divisions is at most It will be about 20 columns and 20 rows. That is, the size of each area is 32.5 mm × 27.5 mm. In addition, when the power source for driving the laser has a communication function, it is conceivable that the laser light output of each area is commanded in real time from the outside. If it takes 2 seconds, the stage moves at 200 mm / s, so the size of each area in the stage traveling direction is calculated to be 40 mm. That is, the number of area divisions is 17 lines. In order to increase the number of area divisions in order to increase control accuracy, it is necessary to increase the storage capacity and increase the communication speed.

  An example of a method for determining a laser driving current for obtaining optimum quality in each area will be given below.

  A method of actually performing the annealing process and performing the “driving current value determining step” will be described below with reference to the flowchart of FIG.

  As shown in FIG. 4, a substrate for condition determination is prepared in the same lot, and an actual annealing process is performed. At this time, the laser drive current value is sequentially changed based on the laser drive current value set in the “drive current value setting step”. Annealing is performed by a “test annealing step” based on the laser drive current value. Next, observe and measure the annealing state after the annealing process is completed by the “state measurement step”, determine the annealing state in each area by the “state determination step”, and if the annealing state is sufficient, In the “driving current value setting step”, a laser driving current capable of obtaining a predetermined quality in the focused area is recorded. Preferably, the laser drive current that provides the optimum quality is recorded. Then, in the “main annealing step”, a laser annealing process is performed on the substrate in the same lot other than the substrate used for determining the conditions based on the determined laser driving current value.

  In the “state determination step”, if the annealing state is insufficient, the “movement step” moves, for example, the annealing position to an area adjacent to the annealing position. Then, the laser driving current value is reset by the “resetting process”. Then, the laser drive current value set again is replaced with the previous laser drive current value in the “drive current value setting step”. Then, similarly to the above, the laser drive current value is sequentially changed based on the reset laser drive current value. Annealing is performed by a “test annealing step” based on the laser drive current value.

  Repeat the above steps for the number of areas. Since the annealing is actually performed as an advantage of this method, the reliability of the determined laser driving current value is high. For this reason, a highly accurate and uniform annealing process can be performed on each substrate 51 in the lot. For this reason, when a semiconductor device (for example, an electronic element such as a transistor or a thyristor) is formed on the annealed semiconductor layer (for example, a silicon (Si) layer) on the substrate, it is formed in a state in which there is little characteristic variation in the surface of the substrate 51. It becomes possible to do. However, since at least one substrate must be used as a condition-determining substrate from the same lot, the yield decreases. In addition, when another lot is input, the condition must be determined again. In addition, since it is necessary to verify under various conditions, it is difficult to reduce the area division.

  Next, a method of performing “determination of laser driving current value” (second example) for determining the laser driving current value for performing the optimum annealing for the film thickness of the heat conversion layer on the substrate will be described with reference to the flowchart of FIG. Will be described below.

  In the method according to the second embodiment, a laser output capable of obtaining a predetermined quality is determined in advance when annealing is performed on the reference film thickness of the heat conversion layer. Preferably, a laser output capable of obtaining optimum quality is determined in advance. Also, determine the laser output that can achieve the optimum quality when annealing is performed for a film thickness different from the reference film thickness of the heat conversion layer, and determine the relationship between the ratio of the heat conversion layer film thickness and the laser output ratio. I ask for it.

  Then, as shown in FIG. 6, a substrate for condition determination is prepared in the same lot, and an actual annealing process is performed by a “test annealing process”. Next, observe and measure the annealing state after the annealing process is completed by the “state measurement step”, determine the annealing state in each area by the “state determination step”, and if the annealing state is sufficient, In the “driving current value setting step”, the laser output capable of obtaining a predetermined quality is calculated by measuring the film thickness of the heat conversion layer in all areas of the substrate 51 where the annealing process is actually performed. Preferably, the laser output that provides the optimum quality is calculated. That is, the laser drive current value in the laser irradiation unit 35 that performs processing is determined from the laser output value in the area that each laser irradiation unit 35 is responsible for.

  In the “state determination step”, when the annealing state is insufficient, the “resetting step” resets the laser drive current value. Then, annealing is performed by a “test annealing process” based on the laser drive current value set again.

  Then, the above operation is repeated for the number of areas. As an advantage of this method, it is possible to determine conditions with considerably high accuracy. However, there is a possibility that the measurement time for the film thickness becomes long and the substrate 51 may be damaged depending on the measuring instrument. However, damage to the substrate 51 can be prevented by using a non-contact film thickness measurement method for film thickness measurement. As a non-contact type film thickness measuring method, a film thickness measuring method using a laser beam is generally known. In addition, since the measurement throughput can be increased by improving the performance of the measuring instrument, the measurement time can be shortened.

  Next, a method for deriving the relationship between the ratio of the film thickness of the heat conversion layer and the ratio of the laser output (third embodiment) will be described below with reference to the flowchart of FIG.

  As shown in FIG. 7, in the method of the third embodiment, a substrate on which a heat conversion layer having a film thickness different from the reference film thickness is prepared by the “substrate preparation step”. Next, the film thickness of the heat conversion layer of the substrate different from the reference film thickness is measured by the “film thickness measuring step”. Then, an actual annealing process is performed by the “test annealing process”. Next, the “state measurement step” observes and measures the anneal state after the annealing process is completed, and the “state determination step” determines the anneal state in each area. When the annealing state is sufficient, the “driving current value setting step” sets a laser driving current value at which a predetermined quality corresponding to the film thickness of the heat conversion layer is obtained in all areas of the substrate 51 where the annealing process is actually performed. Calculate and record. Preferably, the laser drive current value that provides the optimum quality is calculated and recorded. Next, in the “relation table creation process”, the obtained laser drive current value is compared with the reference laser drive current value, and the relationship between the ratio of the film thickness of the heat conversion layer and the ratio of the laser output is derived.

  In the “state determination step”, when the annealing state is insufficient, the laser drive current value is set again by the “resetting step”. Then, annealing is performed by a “test annealing process” based on the laser drive current value set again.

  Next, an example (fourth embodiment) of determining the laser drive current value on the substrate 51 to be annealed will be described with reference to the flowchart of FIG.

  As shown in FIG. 8, in the method of the fourth embodiment, the film thickness of the thermal conversion layer of the substrate to be laser-annealed is measured by the “film thickness measuring step”. Then, the “output setting step” refers to the relationship table between the ratio of the film thickness of the heat conversion layer and the ratio of the laser output, and calculates the laser output that matches the film thickness of the heat conversion layer. In the “value setting step”, a laser driving current for obtaining the output from the calculated laser output is obtained.

  Next, the determination of the laser drive current value for performing the optimum annealing for the reference film thickness and the method of measuring the resistance value at that time (fifth embodiment) will be described below with reference to the flowchart of FIG.

  As shown in FIG. 9, a substrate for condition determination is prepared in the same lot, and an actual annealing process is performed by a “test annealing process”. At this time, the laser drive current value is sequentially changed based on the laser drive current value set in the “drive current value setting step” (not shown). Based on the laser drive current value, annealing is performed by the “test annealing process”. Next, the “state measurement step” observes and measures the anneal state after the annealing process is completed, and the “state determination step” determines the anneal state in each area. If the annealed state is sufficient, the “drive current value setting step” records a laser drive current value that provides optimum quality in the focused area. Then, in the “resistance measurement step”, the resistance value corresponding to the determined laser driving current value is measured.

  In the “state determination step”, when the annealing state is insufficient, for example, the annealing position is moved to an area adjacent to the annealing position. Then, the laser drive current value is set again by the “resetting process”. Then, annealing is performed by a “test annealing process” based on the laser drive current value set again.

  Next, a method for determining the laser drive current value on the processing substrate (sixth embodiment) will be described below with reference to the flowchart of FIG.

  First, as shown in FIG. 10, in this sixth embodiment, a substrate for condition determination is prepared in the same lot, and resistances for each area in the long side direction and the short side direction are prepared by the “resistance measurement step”. Measure the value.

  Usually, the relationship between the film thickness and resistance value of a metal thin film serving as a heat conversion layer appears as a larger difference as the film becomes thinner. The film thickness of each area is estimated using this property. The same number of electrodes as the number of area divisions are arranged on two pairs of opposite sides of the substrate.

  Therefore, as shown in FIG. 11, an average resistance value is obtained by measurement using electrodes on opposite sides. Here, a case where an average resistance value in the short side direction (for example, between D and d) is measured is shown. In this case, an average resistance value between D and d is measured by arranging electrodes in the D part and the d part. This operation is repeated for the number of substrate divisions (from Aa to Mm in the figure). If the measured value is divided by the reference resistance value, the distribution of the resistance value in the long side direction can be obtained by the ratio to the reference value.

  Next, as shown in FIG. 12, the average resistance value in the long side direction is measured. Here, a case where an average resistance value in the long side direction (for example, between 8 and 8 ') is measured is shown. In this case, electrodes are arranged at 8 and 8 ', and an average resistance value between 8 and 8' is measured. This operation is repeated by the number of substrate divisions (between 1-1 'and 11-11' in the figure). If the measured value is divided by the reference resistance value, the distribution of the resistance value in the short side direction can be obtained by the ratio to the reference value.

  Next, a “resistance value matrix creating step” creates a matrix of resistance values in the substrate surface based on the resistance values in the short side direction and the long side direction obtained by the above measurement.

  Next, the ratio of the resistance value of the intersecting area to the reference value is calculated by the “resistance value ratio calculating step”. That is, as shown in FIG. 13, the ratio of the resistance value in the long side direction to the reference value is multiplied by the ratio of the resistance value in the short side direction to the reference value. Thereby, the ratio of the resistance value of the intersecting area to the reference value can be calculated.

  Next, in the “film thickness setting / output setting step”, the film thickness of each area is obtained by multiplying by the proportionality coefficient obtained by experiment. By sequentially calculating, the film thickness distribution of the entire substrate can be obtained in a matrix. A laser output capable of obtaining an optimum quality when annealing is performed with respect to the reference value of the matrix is determined by a prior experiment.

  Next, in the “driving current value setting step”, the laser output in each area is calculated from the matrix described above based on the laser output. The laser drive current in the head to be processed is determined from the laser output value in the area that each laser head is responsible for.

  As an advantage of this method, measurement can be performed at high speed, measurement can be performed non-destructively, the number of area divisions can be easily increased, and in-line / automation is easy.

  Next, a display device formed by using the semiconductor device manufacturing method to which the annealing method of the present invention is applied will be described below.

  As a method of manufacturing a semiconductor device using the annealing method, there is a TFT substrate used for a display device. For example, the annealing method of the present invention can be applied when forming a semiconductor layer to be a channel region of the TFT.

  Hereinafter, as an example of the display device, a configuration example of the organic EL display device will be described with reference to the panel configuration diagram of FIG.

  As shown in FIG. 14, a display area 111 a and a peripheral area 111 b are provided on a substrate 111 constituting the display device 110. In the display area 111a, a plurality of scanning lines 121 and a plurality of signal lines 123 are wired vertically and horizontally, and are configured as a pixel array section in which one pixel is provided corresponding to each intersection. Further, a scanning line driving circuit 125 that scans and drives the scanning line 123 and a signal line driving circuit 127 that supplies a video signal (that is, an input signal) corresponding to luminance information to the signal line 123 are arranged in the peripheral region 111b. Yes.

  A pixel circuit provided at each intersection of the scanning line 121 and the signal line 123 is configured by, for example, a switching transistor Tr1, a driving transistor Tr2, a storage capacitor Cs, and the organic electroluminescent element 1. When a scanning pulse is applied to the scanning line 121 by driving by the scanning line driving circuit 125 and a required signal is supplied to the signal line 123, the switching transistor Tr1 is turned on. As a result, the video signal written from the signal line 123 is held in the holding capacitor Cs, and a current corresponding to the held signal amount is supplied from the driving transistor Tr2 to the organic electroluminescent element 1, and the current value is determined according to the current value. The organic electroluminescent element 1 emits light with luminance. The driving transistor Tr2 and the holding capacitor Cs are connected to a common power supply line (Vcc) 129.

  Note that the pixel circuit configuration described above is merely an example, and a capacitor circuit may be provided in the pixel circuit as necessary, or a plurality of transistors may be provided to configure the pixel circuit. Further, a necessary driving circuit may be added to the peripheral region 111b according to the change of the pixel circuit.

  Here, an example of a cross section of four pixels of the display device 100 will be described with reference to a schematic cross-sectional view of a main part in FIG.

  As shown in FIG. 15, a TFT substrate 113 in which a transistor Tr2, such as a driving transistor Tr2, a switching transistor Tr1 (not shown), and a storage capacitor Cs (not shown) are arranged for each pixel is used as a driving substrate. Is provided with an organic electroluminescence element EL through a planarization insulating film which also serves as a passivation film 131. Each organic electroluminescent element EL includes an organic electroluminescent element ELR that emits red light, an organic electroluminescent element ELG that emits green light, and a blue light emitting element ELB that emits blue light in order in a matrix. Yes.

  Each organic electroluminescence element EL includes a pixel electrode 151 connected to each transistor Tr through a connection hole formed in the planarization insulating film 131. Each pixel electrode 151 is insulated and separated by an insulating film pattern 153 covering the periphery. On these pixel electrodes 151, an organic layer 155 including a light emitting layer and a common electrode 157 common to each pixel are stacked, and the organic layer 155 is sandwiched between the pixel electrode 151 and the common electrode 157. Functions as the organic electroluminescent element EL.

  Among these, the pixel electrode 151 is configured as an anode and also has a function as a reflective layer, while the common electrode 157 is configured as a cathode and detects light generated in the organic layer 17 having a light emitting layer. On the other hand, it is configured as a semi-transmissive electrode having semi-transmissive properties. The organic layer 155 sandwiched between the pixel electrode 151 and the common electrode 157 resonates the emitted light generated in each organic layer and extracts it from the common electrode 157 side, depending on the emission color of each organic electroluminescent element EL. It shall be adjusted to a suitable film thickness. The organic layer 155 is laminated in order of, for example, a hole transport layer, a light emitting layer, and an electron transport layer from the pixel electrode 151 side serving as an anode, and the recombination of electrons and holes is effectively performed in the light emitting layer. It is the structure which light emission by.

  On the TFT substrate 113 on which the organic electroluminescent elements EL as described above are arranged, a sealing substrate 161 is bonded with an adhesive 159 in a state of sandwiching the organic electroluminescent elements 1. The adhesive 159 and the sealing substrate 161 are made of a material that transmits light emitted from each organic electroluminescent element 1.

  Although not shown here, on the sealing substrate 161 made of a material such as transparent glass, for example, a red filter and a green color corresponding to each pixel portion (arrangement portion of the organic electroluminescence element EL). A filter and a color filter such as a blue filter may be provided. Further, a black matrix is provided between the pixels and at the periphery of the display area where the pixels are arranged, and the emitted light from each organic electroluminescent element EL is taken out and the external light reflected by the organic electroluminescent element EL or the like is removed. Absorbs and improves contrast. These color filters and black matrix may be provided on either surface of the sealing substrate 161, but are desirably provided on the TFT substrate 113 side. This makes it possible to protect the color filter and the black matrix without exposing them to the surface.

  Further, as shown in FIG. 16, the display device 100 according to the present invention includes a module-shaped one having a sealed configuration. For example, a sealing portion 163 is provided so as to surround the display region 111a which is a pixel array portion having an organic electroluminescence element, and this sealing portion 163 is used as an adhesive to face a transparent portion such as glass (the sealing substrate 161). This corresponds to the display module formed by being pasted on. As described above, the transparent sealing substrate 161 may be provided with a color filter, a protective film, a black matrix, and the like. Note that the substrate 111 as a display module in which the display region 111a is formed may be provided with a flexible printed circuit board 165 for inputting / outputting a signal or the like to the display region 111a (pixel array unit) from the outside.

  The annealing method of the present invention can be applied to the formation of semiconductor regions such as the driving transistor Tr2 and the switching transistor Tr1 (not shown) of the display device 100. By applying the annealing method of the present invention, the quality in-plane distribution of the substrate can be controlled, and the quality and yield are improved. Further, if conditions are set using an annealing apparatus, it is no longer necessary to set conditions for the film forming apparatus. Since only the laser drive current is adjusted, the throughput is not affected. Even if the number of laser heads increases, the same technology can be extended. There are advantages such as.

  Next, application examples of the display device according to the present invention described above to an electronic apparatus will be described with reference to FIGS.

  As the electronic device, a video signal input to an electronic device such as a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, a video camera, or a video signal generated in the electronic device is displayed as an image or video. It can be applied to display devices for electronic devices in all fields. An example of an electronic device to which the present invention is applied will be described below.

  FIG. 17 is a perspective view showing a television to which the display device according to the present invention is applied. The television according to this application example includes a video display screen unit 301 including a front panel 302, a filter glass 303, and the like, and is created by using the display device according to the present invention as the video display screen unit 301.

  18A and 18B are diagrams showing a digital camera to which the present invention is applied. FIG. 18A is a perspective view seen from the front side, and FIG. 18B is a perspective view seen from the back side. The digital still camera according to this application example includes a light emitting unit 311 for flash, a display unit 312, a menu switch 313, a shutter button 314, and the like, and is manufactured by using the display device according to the present invention as the display unit 312. The

  FIG. 19 is a perspective view showing a notebook personal computer to which the present invention is applied. The notebook personal computer according to this application example includes a keyboard 322 that is operated when inputting characters and the like, a display unit 323 that displays an image, and the like as a display unit 323. It is produced by using.

  FIG. 20 is a perspective view showing a video camera to which the present invention is applied. A video camera according to this application example includes a main body 331, a lens 332 for photographing an object on a side facing forward, a start / stop switch 333 at the time of photographing, a display unit 334, and the like. It is manufactured by using the display device according to the above.

  FIG. 21 is a diagram showing a mobile terminal device to which the present invention is applied, for example, a mobile phone, in which (A) is a front view in an opened state, (B) is a side view thereof, and (C) is in a closed state. (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view. A mobile phone according to this application example includes an upper housing 341, a lower housing 342, a connecting portion (here, a hinge portion) 343, a display 344, a sub-display 345, a picture light 346, a camera 347, and the like. It is manufactured by using the display device according to the present invention as the sub display 345.

It is the flowchart shown about one Embodiment (1st Example) of the annealing method of this invention. It is the schematic structure perspective view shown about an example of the laser annealing processing apparatus. It is drawing which showed the film thickness distribution in the board | substrate surface of a heat converting layer, (1) is a top view, (2) is a film thickness distribution figure in the moving direction of a laser beam. It is the flowchart which showed the detail of one Embodiment (1st Example) of the annealing method of this invention. It is the top view which showed the example of division | segmentation of a board | substrate. It is the flowchart shown about one Embodiment (2nd Example) of the annealing method of this invention. It is the flowchart shown about one Embodiment (3rd Example) of the annealing method of this invention. It is the flowchart shown about one Embodiment (4th Example) of the annealing method of this invention. It is the flowchart shown about one Embodiment (5th Example) of the annealing method of this invention. It is the flowchart shown about one Embodiment (6th Example) of the annealing method of this invention. It is the top view which showed the example of a division | segmentation of the board | substrate of resistance measurement. It is the top view which showed the example of a division | segmentation of the board | substrate of resistance measurement. It is a top view explaining the calculation method of ratio with the resistance value of a reference film thickness in each area. It is a figure which shows an example of the panel structure of a display apparatus. It is a figure which shows an example of the panel structure of the display apparatus with which this invention is applied. It is a block diagram which shows the module-shaped display apparatus of the sealed structure to which this invention is applied. It is a perspective view which shows the television to which this invention is applied. It is a figure which shows the digital camera to which this invention is applied, (A) is the perspective view seen from the front side, (B) is the perspective view seen from the back side. 1 is a perspective view showing a notebook personal computer to which the present invention is applied. It is a perspective view which shows the video camera to which this invention is applied. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the portable terminal device to which this invention is applied, for example, a mobile telephone, (A) is the front view in the open state, (B) is the side view, (C) is the front view in the closed state , (D) is a left side view, (E) is a right side view, (F) is a top view, and (G) is a bottom view.

Explanation of symbols

  1 ... Laser annealing equipment

Claims (9)

In an annealing method in which a heat conversion layer for converting laser light into heat is formed on an annealing region in a substrate surface, and annealing is performed on the annealing region.
An output determining step for determining laser light output in advance for each area obtained by dividing the annealing region;
Next, a drive current value determination step for determining in advance a laser drive current value corresponding to the laser light output,
Next, when performing the annealing process, a laser drive current value is adjusted for each area, and the laser drive current value is controlled to keep the laser drive current value constant, or the laser beam output is constant. An annealing method characterized by performing an output value control process for controlling to maintain a constant value. The annealing method according to claim 1, wherein the output determining step determines the laser beam output so that the heat conversion efficiency of the heat conversion layer for each area is constant in the substrate surface. The drive current value determining step includes:
A driving current value setting step of sequentially changing the laser driving current value based on the set laser driving current value;
A test annealing step of performing annealing on the substrate for condition determination based on the laser drive current value;
A state measuring step of observing and measuring the annealed state after the test annealing process is completed;
A state determination step for determining the annealing state in each area;
In the state determination step, when the annealing state is determined to be sufficient, a driving current value calculation step of calculating and recording a laser driving current that obtains a predetermined quality in the focused area;
A main annealing step for performing laser annealing on the substrate in the same lot other than the substrate used for the condition determination based on the determined laser driving current value;
In the state determination step, when it is determined that the annealing state is insufficient, a moving step of moving the annealing position to an area adjacent to the annealing position;
A drive current value resetting step for resetting the laser drive current value;
The annealing method according to claim 1, wherein the previous laser drive current value is replaced with the reset laser drive current value in the drive current value setting step. The drive current value determining step includes:
A test annealing process in which annealing is performed on a substrate for condition determination in the same lot;
A state measuring step of observing and measuring the annealed state after the test annealing process is completed;
Next, a state determination step for determining the annealing state in each area,
Laser light output that can measure the film thickness of the thermal conversion layer and obtain a predetermined quality in all areas of the substrate that are actually annealed when the annealing state in each area is determined to be sufficient in the state determination step A drive current value setting step of calculating and recording a laser drive current value from the value;
The annealing method according to claim 1, further comprising a resetting step of resetting a laser driving current value when the annealing state is determined to be insufficient in the state determination step. The drive current value determining step includes:
A substrate preparation step for preparing a substrate for condition determination in which a heat conversion layer having a film thickness different from the reference film thickness is formed;
A film thickness measuring step for measuring the film thickness of the heat conversion layer of the substrate for condition determination;
A test annealing step of performing an annealing process on the substrate for condition determination in which the film thickness is measured;
A state measuring step of observing and measuring the annealed state after the annealing treatment is completed;
Based on the state measurement, a state determination step for determining an annealing state in each area;
In the state determination step, when the annealing state in each area is sufficient, a laser drive current value that can obtain a predetermined quality corresponding to the film thickness of the heat conversion layer in all areas of the substrate that is actually annealed is calculated. Driving current value setting process to be recorded,
A relationship table for comparing the obtained laser drive current value and the laser drive current value corresponding to the reference film thickness of the heat conversion layer and deriving the relationship between the ratio of the film thickness of the heat conversion layer and the ratio of the laser light output Creation process,
The annealing method according to claim 1, further comprising a resetting step of resetting a laser driving current value when the annealing state is determined to be insufficient in the state determination step. The drive current value determining step includes:
A film thickness measuring step for measuring the film thickness of the heat conversion layer of the substrate to be subjected to laser annealing;
With reference to a relationship table between the ratio of the film thickness of the heat conversion layer and the ratio of the laser output, a laser output setting step for setting a laser output suitable for the film thickness of the heat conversion layer;
The annealing method according to claim 1, further comprising: a drive current value setting step of obtaining and setting a laser drive current value from which the output is obtained from the calculated laser output. The drive current value determining step includes:
After a test annealing step of performing an annealing process based on the laser driving current value,
A state measuring step of observing and measuring the annealed state;
Next, a state determination step of determining the annealing state in each area,
In the state determination step, when the annealing state in each area is sufficient, a driving current value setting step of calculating and setting a laser driving current value that obtains a predetermined quality in the focused area;
A resistance measuring step of measuring a resistance value corresponding to the determined laser driving current value;
And a resetting step of resetting the laser drive current value by moving the annealing position to an area adjacent to the annealing position when the annealing state is determined to be insufficient in the state determination step. The annealing method according to claim 1. The steps after the resistance measuring step are as follows:
Prepare a substrate for condition determination in the same lot, and measure the resistance value for each area in the long side direction and the short side direction,
Based on the resistance values in the short side direction and the long side direction obtained by the measurement, a resistance value matrix creating step for creating a matrix of resistance values in the substrate surface,
A resistance value ratio calculating step for calculating a ratio of the resistance value of the intersected area to the reference value;
The film thickness of each area is obtained by multiplying by the proportional coefficient obtained by experiment, and the laser beam output that can obtain a predetermined quality when annealing is performed on the reference value of the matrix is set by a prior experiment. Film thickness setting / output setting process,
Based on the laser light output, the laser light output in each area is calculated from the above-mentioned matrix, and the laser drive current value in the laser irradiation unit that performs processing from the laser light output value in the area that each laser irradiation unit takes charge of is set The annealing method according to claim 7, further comprising: a driving current value setting step. In a method for manufacturing a semiconductor device, a heat conversion layer that converts laser light into heat is formed on an annealing region, and an annealing process is performed in which annealing is performed on the annealing region.
The annealing step includes
An output determining step for determining laser light output in advance for each area obtained by dividing the annealing region;
Next, a drive current value determination step for determining in advance a laser drive current value corresponding to the laser light output,
Next, when the annealing process is performed, a laser driving current value is adjusted for each area, and the laser driving current value is controlled to keep the laser driving current value constant, or the laser light output is constant. A method for manufacturing a semiconductor device, comprising: performing an output value control process for controlling the output to be maintained at a predetermined value.

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