KR20210154104A - Micro-LED chip package and manufacturing method therof - Google Patents

Abstract

An object of the present invention is to provide a micro LED chip package capable of facilitating package testing and reducing package defect. The micro LED chip package of the present invention comprises: a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode in contact with one side of the first conductivity type semiconductor layer; a second electrode in contact with a surface of the second conductivity type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode.

Description

Micro-LED chip package and manufacturing method thereof

The present invention relates to a micro-LED chip package and manufacturing method therof, and more particularly, to a micro-LED chip package and manufacturing method therof, which can reduce package manufacturing cost, facilitate package testing, and reduce package defects. It relates to an LED chip package and a method for manufacturing the same.

The present invention is derived from the research conducted and supervised by LC Square Co., Ltd. as part of the technology start-up investment link project (TIPS, private investment-led technology start-up support) of the Ministry of SMEs and Startups [Research period: 2019.7.1-2021.6. 30 (24 months), Startup Team: 　LC Square Co., Ltd., Operating Company: Korea University Technology Holdings, Management Agency: Korea Angel Investment Association, Specialized Institution: Small and Medium Business Technology Information Promotion Agency, Business Name: Technology Startup Investment Linkage, Research Project Name: Micro LED display core technology and parts development, task identification number: S2767485].

The micro LED chip package may be a package using a miniature LED light emitting diode) chip having a size (ie, width and length) of 100 μm or less. The micro LED chip included in the micro LED chip package is so small that it is not easy to test. In addition, the micro LED chip included in the micro LED chip package has a greater width or length than the thickness, and thus cracks occur, causing package defects.

SUMMARY OF THE INVENTION An object of the present invention is to provide a micro LED chip package capable of facilitating package package testing and reducing package defects.

In addition, another problem to be solved by the present invention is to provide a novel manufacturing method of the above-described micro LED chip package.

In order to solve the above problems, a micro LED chip package according to an embodiment of the present invention includes a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer; a first electrode in contact with one side of the first conductivity-type semiconductor layer; a second electrode in contact with the surface of the second conductivity-type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode.

In an embodiment of the present invention, the first electrode may surround the first conductivity-type semiconductor layer to be in contact with both sides of the first conductivity-type semiconductor layer. A width of the first electrode may be greater than a width of the micro LED chip. An upper surface of the first electrode may be positioned higher than an upper surface of the second conductivity-type semiconductor layer.

In an embodiment of the present invention, a first electrode pad and a second electrode pad separated by a passivation layer and positioned horizontally apart from each other may be disposed on the first electrode and the second electrode. The second electrode may be in contact with a part or all of the surface of the second conductivity type semiconductor layer.

The passivation layer may be formed on one side of the light emitting layer and one side of the second conductivity type semiconductor layer.

In one embodiment of the present invention, the micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip that are horizontally spaced apart from each other, and the first electrode is the red micro LED chip. Both sides of the first conductivity type semiconductor layer of the LED chip, the green micro LED chip, and the blue micro LED chip may be in contact with each other. The second electrode may be in contact with the surface of the second conductivity type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip.

A micro LED chip package according to an embodiment of the present invention includes a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer, wherein an upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type a micro LED chip having a mesa structure in which the width of the type semiconductor layer is smaller than the width of the lower portion of the first conductivity type semiconductor layer; a first electrode in contact with one or both surfaces of a lower portion of the first conductivity-type semiconductor layer and having an upper surface higher than an upper surface of the second conductivity-type semiconductor layer; a second electrode in contact with a part or all of a surface of the second conductivity type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode.

In one embodiment of the present invention, a step portion exposed by the mesa structure may be installed on one side of the lower portion of the first conductivity-type semiconductor layer. The passivation layer may be disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and a portion of the step portion, and a portion of the step portion may be in contact with the first electrode.

In an embodiment of the present invention, the passivation layer may be disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and the step portion. The passivation layer may be disposed to expose a portion of the surface of the second conductivity-type semiconductor layer and a portion of the surface of the first electrode on the upper surface of the first electrode and the upper surface of the second electrode. A first electrode pad and a second electrode pad positioned horizontally apart from each other may be disposed on the first electrode and the second electrode, respectively.

In one embodiment of the present invention, the micro LED chip may include at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip that are horizontally spaced apart from each other.

In one embodiment of the present invention, the first electrode is in contact with both sides of the first conductive semiconductor layer of the red micro LED chip, the green micro LED chip and the blue micro LED chip, and the second electrode is the The red micro LED chip, the green micro LED chip, and the blue micro LED chip may be in contact with the surface of the second conductivity type semiconductor layer.

A method of manufacturing a micro LED chip package according to an embodiment of the present invention includes manufacturing a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer on a source substrate; forming a first passivation layer on the second conductivity type semiconductor layer of the micro LED chip; separating the micro LED chip on which the first passivation layer is formed from the source substrate and transferring the micro LED chip onto a temporary substrate; forming a seed electrode layer on the first passivation layer and on the temporary substrate while surrounding the micro LED chip; and forming a sacrificial dam spaced apart from the micro LED chip on the seed electrode layer around the micro LED chip.

In the method of manufacturing a micro LED chip package according to an embodiment of the present invention, a main electrode layer is formed on the seed electrode layer in the sacrificial dam to be in contact with both sides of the first conductivity-type semiconductor layer, and the seed electrode layer and the main electrode layer are formed. forming a first electrode; forming separation holes by removing the sacrificial dam and etching the seed electrode layer under the sacrificial dam; forming a second passivation layer in the first passivation layer, the first electrode, and the separation hole; patterning the first and second passivation layers to form a first pad contact hole exposing the main electrode layer and a second pad contact hole exposing a second conductivity type semiconductor layer of the micro LED chip; A first electrode pad contacting the main electrode layer is formed in the first pad contact hole, and a second electrode pad including a second electrode contacting the second conductivity type semiconductor layer is formed in the second pad contact hole. to do; and separating the micro LED chip from the temporary substrate to complete a micro LED chip package.

In one embodiment of the present invention, in the manufacturing step of the micro LED chip, the micro LED chip has an upper portion of the first conductivity type semiconductor layer, and the width of the light emitting layer and the second conductivity type semiconductor layer is the first It may be manufactured to have a mesa structure smaller than the width of the lower portion of the conductive semiconductor layer.

In an embodiment of the present invention, in the step of transferring the micro LED chip from the source substrate onto the temporary substrate, a bonding layer may be further formed on the temporary substrate.

In one embodiment of the present invention, the step of forming the first electrode,

forming the main electrode layer on the seed electrode layer in the sacrificial dam while sufficiently covering the micro LED chip; and flattening and etching the main electrode layer, the seed electrode layer, and the sacrificial dam to expose the first passivation layer includes

In an embodiment of the present invention, the manufacturing of the micro LED chip on the source substrate includes a red micro LED chip, a green micro LED chip, and a blue color on the first source substrate, the second source substrate, and the third source substrate, respectively. manufacturing at least one of the micro LED chips.

In an embodiment of the present invention, the step of separating the micro LED chip from the source substrate and transferring the micro LED chip onto a temporary substrate includes the red micro LED on the first source substrate, the second source substrate, and the third source substrate. and transferring at least one of the chip, the green micro LED chip, and the blue micro LED chip onto the temporary substrate.

The micro LED chip package of the present invention can easily perform a package test. In addition, the micro LED chip package of the present invention can suppress the occurrence of cracks, thereby reducing package defects.

1 is a plan view of a micro LED chip package according to an embodiment of the present invention.
FIG. 2A is a cross-sectional view taken along line IIa-IIa' of FIG. 1 .
FIG. 2B is a layout diagram of components surrounding the micro LED chip of FIG. 2A .
3 is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.
4A is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.
Fig. 4B is a layout view of components surrounding the micro LED chip of Fig. 4A;
5A is a plan view showing a micro LED chip used in the micro LED chip package of the present invention is implemented on a source substrate.
5B is a plan view illustrating a micro LED chip of a comparative example implemented on a source substrate.
6A is a cross-sectional view of a micro LED chip package implemented by employing the micro LED chip implemented on the source substrate of FIG. 5A .
6B is a cross-sectional view of a micro LED chip of a comparative example implemented on the source substrate of FIG. 5A.
7A to 7K are cross-sectional views illustrating a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
8 is a layout view of a micro LED chip package according to an embodiment of the present invention.
9 and 10 are cross-sectional views illustrating a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
11A to 21 are views for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
22 is a layout diagram of a micro LED chip package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments of the present invention may be implemented by only one, and also, the following embodiments may be implemented by combining one or more. Accordingly, the present invention should not be construed as being limited to one embodiment.

1 is a plan view of a micro LED chip package according to an embodiment of the present invention, FIG. 2A is a cross-sectional view taken along IIa-IIa' of FIG. 1, and FIG. 2B is a layout of components surrounding the micro LED chip of FIG. 2A It is also

Specifically, in FIGS. 1, 2A, and 2B, the X direction is the width direction of the package (or chip), the Y direction is the length direction of the package (or chip), and the Z direction is the package (or chip) ( or the thickness of the chip). The Z direction may be a direction perpendicular to the X-Y plane by the X direction and the Y direction.

The micro light emitting diode (LED) chip package 10 may be a chip scale package. As shown in FIG. 1 , the micro LED chip package 10 includes a second electrode pad 258 , a first electrode pad 260 spaced apart from the second electrode pad 258 in the X direction, and a second electrode pad. A passivation layer 252a that insulates between the 258 and the first electrode pad 260 may be included. The first electrode pad 260 may be of a first conductivity type, for example, an N-type electrode pad, and the second electrode pad 258 may be a second conductivity type, for example, a P-type electrode pad.

An example of the cross-sectional structure of the micro LED chip package 10 shown in FIG. 1 is shown in FIG. 2A. The micro LED chip package 10 includes a micro LED chip 200 .

The micro LED chip 200 may be a red micro LED chip, a green micro LED chip, or a blue micro LED chip. The emission wavelength of the red micro LED chip, the green micro LED chip, or the blue micro LED chip may vary depending on the semiconductor bandgap. Blue micro LED chips can be fabricated based on GaN. The green micro LED chip is GaN-based, but can be manufactured by adjusting the band gap by differentiating the composition ratio of the quantum well structure material (InGaN), which is the light emitting region, from that of the blue micro LED chip. The red micro LED chip can be fabricated based on GaAs.

The micro LED chip 200 may include a first conductivity type semiconductor layer 110 , a light emitting layer 120 , and a second conductivity type semiconductor layer 130 on the semiconductor layer 100 not doped with impurities. The first conductivity-type semiconductor layer 110 may be an N-type semiconductor layer. The second conductivity-type semiconductor layer 130 may be a P-type semiconductor layer.

The micro LED chip 200 may include a mesa structure MS including an upper portion of the second conductivity type semiconductor layer 130 , the light emitting layer 120 , and the first conductivity type semiconductor layer 110 . The width W1 of the mesa structure may be smaller than the width W2 of the lower portion of the first conductivity-type semiconductor layer 110 . The mesa structure MS may be formed by etching a portion of the second conductivity type semiconductor material layer, the light emitting material layer, and the first conductivity type semiconductor material layer when the micro LED chip 200 is manufactured.

A stepped portion MP exposed by the mesa structure MS may be positioned at one side of the lower portion of the first conductivity-type semiconductor layer 110 . In this embodiment, the micro LED chip 200 includes the mesa structure (MS), but if necessary, the micro LED chip 200 does not include the mesa structure (MS), but the first conductivity type semiconductor layer 110 and the light emitting layer (120) and the second conductivity type semiconductor layer 130 may have the same width.

The micro LED chip package 10 includes a first electrode 248b in contact with the side surface 110S of the first conductivity type semiconductor layer. In some embodiments, the first electrode 248b may be in contact with one side 110S of the lower portion of the first conductivity-type semiconductor layer 110 . In some embodiments, the first electrode 248b may be in contact with both sides of the lower portion of the first conductivity-type semiconductor layer 110 . In some embodiments, since the first electrode 248b surrounds the micro LED chip 200 , the width of the first electrode, ie, the length in the X direction, may be greater than the width W2 of the micro LED chip.

In some embodiments, the upper surface of the first electrode 248b may have a higher upper surface than the upper surface of the second conductivity-type semiconductor layer 130 . The first electrode 248b may be in contact with a partial surface of the step portion MP. A partial surface of the step portion MP may be a surface 110F of a lower portion of the first conductivity-type semiconductor layer 110 . The micro LED chip package 10 includes passivation layers 240a and 252a electrically separating the first electrode 248b and the second electrode 257 to be described later. The passivation layers 240a and 252a may include a first passivation layer 240a and a second passivation layer 252a.

The first passivation layer 240a is formed on both side surfaces of the mesa structure MS, a partial surface of the step portion MP, and a partial surface of the second conductivity type semiconductor layer 130 . The second passivation layer 252a is formed on both side surfaces of the first electrode 248b, the surface of the first electrode 248b, and the first passivation layer 240a. The micro LED chip package 10 may include a second electrode 257 in contact with the surface of the second conductivity-type semiconductor layer 130 . The second electrode 257 may be in contact with a portion of the surface of the second conductivity-type semiconductor layer 130 .

The micro LED chip package 10 may include a first electrode pad 260 and a second electrode pad 258 in electrical contact with the first electrode 248b and the second electrode 257 , respectively. The first electrode pad 260 and the second electrode pad 258 may be positioned horizontally apart from each other while being separated by passivation layers 240a and 252a on the first electrode 248b and the second electrode 257, respectively. can

The micro LED chip package 10 has a first passivation layer 240a positioned to surround the second conductivity-type semiconductor layer 130 as shown in FIG. 2B , and a first conductivity to surround the first passivation layer 240a. A lower portion of the type semiconductor layer 110 may be positioned. In addition, the lower portion of the first conductivity type semiconductor layer 110 is surrounded by the first electrode 248b, and one side 110S of the first conductivity type semiconductor layer 110 is connected to the first electrode 248b. surrounded and connected.

As described above, the micro LED chip package 10 may support the micro LED chip 200 by locating the first electrode 248b to surround the micro LED chip 200 . In this case, the manufacturing process of the micro LED chip 200 or an additional process for handling the micro LED chip package 10 , for example, when mass-transferring the micro LED chip package 10 to a display substrate or bonding to another electronic substrate, the micro LED By suppressing the crack generation of the chip package 10 , it is possible to reduce package defects.

3 is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.

Specifically, the micro LED chip package 10 - 1 has a structure of the first passivation layer 240a ′ and the second electrode 257 ′ when compared with the micro LED chip package 10 of FIGS. 1 , 2A and 2B . may be the same except that In FIG. 3 , the contents described with reference to FIGS. 1 , 2A and 2B will be briefly described or omitted.

The micro LED chip package 10 - 1 may include first passivation layers 240a ′ formed on both sides of the mesa structure MS. In the micro LED chip package 10 - 1 , a second electrode 257 ′ in contact with the second conductivity type semiconductor layer 130 is formed on the entire surface of the second conductivity type semiconductor layer 130 . The second passivation layer 252a ′ is formed on some surfaces of the first passivation layer 240a ′ on both sides of the mesa structure MS and the second electrode 257 ′ on the second conductivity type semiconductor layer 130 . has been

The micro LED chip package 10-1 includes a second electrode 257 ′ that is in contact with all or all of the entire surface of the second conductivity-type semiconductor layer 130 to emit light more reliably from the light emitting layer 120 . can

4A is an example of a cross-sectional view of a micro LED chip package according to an embodiment of the present invention, and FIG. 4B is a layout view of components surrounding the micro LED chip of FIG. 4A.

Specifically, the micro LED chip package 10-2 is the same as the micro LED chip package 10 of FIGS. 1, 2A, and 2B except that the structure of the first passivation layer 240a" is different. In Figs. 4A and 4B, the contents described in Figs. 1, 2A and 2B will be briefly described or omitted.

The micro LED chip package 10 - 2 may include a first passivation layer 240a″ formed on both sides of the mesa structure MS, a portion of a surface of the second conductivity type semiconductor layer, and an upper surface of the step MP. The first passivation layer 240a" is formed on the entire surface of the step portion MP. In addition, one side of the first passivation layer 240a ″ may be on the same plane as one side of the first conductivity-type semiconductor layer 110 .

The micro LED chip package 10-2 has a first passivation layer ( 240a ″), and a lower portion of the first conductivity-type semiconductor layer 110 may be positioned to surround the first passivation layer 240a ″. In addition, the lower portion of the first conductivity type semiconductor layer 110 is surrounded by the first electrode 248b, and one side 110S of the first conductivity type semiconductor layer 110 is connected to the first electrode 248b. surrounded and connected.

As described above, the micro LED chip package 10-2 includes the first passivation layer 240a ″ formed on the entire surface of the step portion MP to protect the mesa structure MS and the micro LED chip 200 ), by locating the first electrode 248b on one side, it is possible to suppress the occurrence of cracks in the micro LED chip 200 .

5A is a plan view showing a micro LED chip used in the micro LED chip package of the present invention implemented on a source substrate, and FIG. 5B is a plan view showing a micro LED chip of a comparative example implemented on the source substrate.

Specifically, FIG. 5A shows that the micro LED chip 200 used in the micro LED chip package ( 10 in FIGS. 1 , 2A and 2B ) of the present invention is implemented on the source substrate 20 . The source substrate 20 is a sapphire substrate, a silicon (Si) substrate, a gallium arsenide (GaAs) substrate, a gallium phosphorus (GaP) substrate, a gallium arsenide (GaAsP) substrate, a silicon carbide (SiC) substrate, and a potassium nitrogen (GaN) substrate. , an aluminum nitrogen (AlN) substrate, a zinc oxide (ZnO) substrate, and a magnesium oxide (MgO) substrate may be used. The source substrate 20 may be a semiconductor substrate. The source substrate 20 may be a wafer. The micro LED chip 200 may include a first conductivity type semiconductor layer 110 , a light emitting layer 120 , and a second conductivity type semiconductor layer 130 .

A second electrode pad 258 may be positioned on the emission layer 120 and the second conductivity-type semiconductor layer 130 . The first electrode pad is not formed on the micro LED chip 200 and only the second electrode pad 258 is disposed. In FIG. 5A , the size of the second electrode pad 258 is shown to be small for convenience. As shown in FIG. 5A , 24 micro LED chips 200 may be implemented on the source substrate 20 .

FIG. 5B shows a micro LED chip 200P of a comparative example implemented on the source substrate 20 . The micro LED chip 200P of the comparative example includes a first conductivity type semiconductor layer 110P and a light emitting layer 120P. A second conductivity type semiconductor layer 130P may be included. A first electrode pad 260P may be disposed on the first conductivity-type semiconductor layer 110P, and a second electrode pad 258P may be disposed on the emission layer 120P and the second conductivity-type semiconductor layer 130P.

A first electrode pad 260P and a second electrode pad 258P are disposed in the micro LED chip 200 of the comparative example. As shown in FIG. 5B , 12 micro LED chips 200P of the comparative example may be implemented on the source substrate 20 .

When comparing FIGS. 5A and 5B, the micro LED chip 200 used in the micro LED chip package (10 in FIGS. 1, 2A, and 2B) of the present invention is compared with only the second electrode pad 258 disposed. More may be implemented in the source substrate 20 than the example. In this way, when more micro LED chip 200 is implemented on the source substrate 20, the manufacturing cost of the micro LED chip 200 or the micro LED chip package (10 in FIGS. 1, 2A, and 2B) can be reduced. .

In addition, the micro LED chip 200 used in the micro LED chip package (10 in FIGS. 1, 2A, and 2B) of the present invention has the size of the second electrode pad 258, that is, the width in the X direction and the Y direction. The length can be freely adjusted.

Accordingly, the size of the micro LED chip package (10 in FIGS. 1, 2A, and 2B) of the present invention can be freely adjusted. In addition, in the micro LED chip package (10 in FIGS. 1, 2A, and 2B), when the second electrode pad 258 of the micro LED chip 200 is enlarged, the micro LED chip package (FIG. 1) , 10) of FIGS. 2A and 2B can be easily performed.

6A is a cross-sectional view of a micro LED chip package implemented by employing a micro LED chip implemented on the source substrate of FIG. 5A , and FIG. 6B is a cross-sectional view of a micro LED chip of a comparative example implemented on the source substrate of FIG. 5A .

Specifically, since the micro LED chip package 10 of FIG. 6A has been described with reference to FIGS. 1, 2A, and 2B, a structural description thereof will be omitted. The micro LED chip package 10 may support the micro LED chip 200 as a support structure AR. The support structure AR may include a first electrode 248b , a first electrode pad 260 , and/or a second passivation layer 252a. The occurrence of cracks in the micro LED chip package 10 may be reduced due to the support structure AR during a manufacturing process of the micro LED chip 200 or an additional process for handling the micro LED chip package 10 .

On the other hand, the micro LED chip 200P of the comparative example of FIG. 6B has a first conductivity type semiconductor layer 110P and a light emitting layer 120P. A second conductivity type semiconductor layer 130P may be included. A first electrode pad 260P may be disposed on the first conductivity type semiconductor layer 110P, and a second electrode pad 258P may be disposed on the second conductivity type semiconductor layer 130P. The upper portion of the first conductivity-type semiconductor layer 110P, the emission layer 120P, and the second conductivity-type semiconductor layer 130P constitute the mesa structure MSP.

A first electrode contact region PAR may be positioned on one side of the micro LED chip 200P of the comparative example. The micro LED chip 200P of the comparative example cannot manufacture a larger number of chips on the source substrate ( 20 in FIG. 5B ) due to the first electrode contact region PAR. In the micro LED chip 200P of the comparative example, cracks may easily occur at the boundary between the mesa structure MSP and the first conductivity type semiconductor layer 110P due to the mesa structure MSP due to the formation of the first electrode contact region PAR. have.

As described above, in the micro LED chip package 10 of the present invention, by supporting the micro LED chip 200 with a support structure AR, a manufacturing process of the micro LED chip 200 or an additional process of handling the micro LED chip package 10 It is possible to reduce the occurrence of cracks.

7A to 7K are cross-sectional views illustrating a method of manufacturing a micro LED chip package according to an embodiment of the present invention, and FIG. 8 is a layout view of the micro LED chip package according to an embodiment of the present invention.

Specifically, FIGS. 7A to 7K and FIG. 8 are provided to explain a method of manufacturing the micro LED chip package 10 of FIGS. 1, 2A and 2B . 7A to 7K, and FIG. 8, the same or similar reference numerals as those of FIGS. 1, 2A and 2B denote the same member. In FIGS. 7A to 7K and FIG. 8 , the contents described in FIGS. 1, 2A and 2B will be briefly described or omitted.

Referring to FIG. 7A , the micro LED chip 200 is manufactured on the source substrate 20 . A plurality of micro LED chips 200 may be manufactured to be spaced apart from each other on the source substrate 20 . Although two micro LED chips 200 are illustrated on the source substrate 20 in FIG. 7A , a plurality of micro LED chips 200 may be manufactured on the source substrate 20 . The micro LED chip 200 may include a semiconductor layer 100 not doped with impurities, a first conductivity type semiconductor layer 110 , a light emitting layer 120 , and a second conductivity type semiconductor layer 130 .

The micro LED chip 200 may include a mesa structure MS. In the micro LED chip 200 , a step portion MP exposed by the mesa structure MS may be formed on one side of the lower portion of the first conductivity type semiconductor layer 110 .

A first passivation insulating material layer 240 is formed on both sides and surfaces of the mesa structure MS. A first passivation insulating material layer 240 is formed on the top and side surfaces of the second conductivity type semiconductor layer 130 , both sides of the light emitting layer 120 , and both sides of the upper portion of the first conductivity type semiconductor layer 110 . do.

Referring to FIG. 7B , the micro LED chip 200 on which the first passivation insulating material layer 240 is formed on the source substrate 20 is transferred (or transferred) to the temporary substrate 30 . The temporary substrate 30 may be referred to as an intermediate substrate, an interposer substrate, or the like.

A bonding layer 242 is formed on the temporary substrate 30 . In FIG. 7B , it is illustrated that one micro LED chip 200 manufactured on the source substrate 20 is transferred (or transferred) to the temporary substrate 30 , but this is exemplary and a plurality of micro LED chips 200 are It may be transferred (or transferred) onto the temporary substrate 30 .

7c and 7d, as shown in FIG. 7c, while surrounding the micro LED chip 200, the upper portion of the first passivation material layer 240 and the bonding layer 242 on the temporary substrate 30 Seed on An electrode material layer 244 is formed.

Subsequently, as shown in FIG. 7D , a sacrificial dam material layer 246 is formed to be spaced apart from the micro LED chip 200 on the seed electrode material layer 244 around the micro LED chip 200 .

Referring to FIGS. 7E and 7F , as shown in FIG. 7E , a main electrode material layer 248 is formed on the seed electrode material layer 244 . The main electrode material layer 248 may be formed to be lower or higher than the height of the sacrificial dam material layer 246 . Accordingly, the main electrode material layer 248 may be formed inside the sacrificial dam material layer 246 surrounding the micro LED chip 200 . The main electrode material layer 248 may be formed on the seed electrode material layer 244 inside the sacrificial dam material layer 246 .

Subsequently, as shown in FIG. 7F , the main electrode material layer 248 and the sacrificial dam material layer 246 are planarized using the upper surface of the first passivation material layer 240 as an etch stop point to form the main electrode layer 248a. and a sacrificial dam 246a. In other words, the main electrode material layer 248 and the sacrificial dam material layer 246 are etched to form the main electrode layer 248a and the sacrificial dam 246a while exposing the upper surface of the first passivation material layer 240 .

7G and 7H, as shown in FIG. 7G, the sacrificial dam 246a and the separation hole exposing the bonding layer 242 by removing and etching the seed electrode material layer 244 in the sacrificial dam 246a The fields 250a and 250b and the seed electrode layer 244a are formed. The separation holes 250a and 250b may be formed to surround the micro LED chip 200 .

Separation holes 250a and 250b may be formed on one side and the other side of the micro LED chip 200 , respectively. The distance from the micro LED chip 200 to the separation hole 250a on one side may be different from the distance from the separation hole 250b to the other side. For example, the distance from the micro LED chip 200 to the separation hole 250a on one side may be smaller than the distance from the separation hole 250b to the other side.

A seed electrode layer 244a may be formed in the seed electrode material layer 244 by forming the separation holes 250a and 250b. In addition, the seed electrode layer 244a and the main electrode layer 248a contacting both sides of the micro LED chip 200 by the formation of the separation holes 250a and 250b become the first electrode 248b.

Subsequently, as shown in FIG. 7H , a second passivation material layer 252 is formed on the front surface of the micro LED chip 200 in which the separation holes 250a and 250b are formed. That is, the second passivation material layer 252 is formed inside the separation holes 250a and 250b and on the bonding layer 242 , on the main electrode layer 248a , and on the first passivation material layer 240 . to form

7I and 7J, as shown in FIG. 7I, the first pad contact hole (240) and the second passivation material layer (252) are patterned to expose the main electrode layer (248a). 256 ) and a second pad contact hole 254 exposing the second conductivity type semiconductor layer 130 of the micro LED chip 200 is formed. By patterning the first passivation material layer 240 and the second passivation material layer 252, the first passivation material layer 240 and the second passivation material layer 252 are formed by the first passivation layer 240a and the second passivation material layer 252. layer 252a. By patterning the second passivation material layer 252 , the second passivation material layer 252 on the bonding layer 242 in the separation holes 250a and 250b may be removed to expose the surface of the bonding layer 242 . .

Subsequently, as shown in FIG. 7J , a first electrode pad 260 in contact with the main electrode layer 248a is formed in the first pad contact hole ( 256 in FIG. 7I ). A second electrode pad 258 including a second electrode 257 in contact with the second conductivity-type semiconductor layer 130 is formed in the second pad contact hole 254 of FIG. 7I .

Referring to FIG. 7K , the micro LED chip package 10 including the micro LED chip 200 , the first electrode pad and the second electrode pad 258 is separated from the temporary substrate 30 . In some embodiments, the separation of the micro LED chip package 10 from the temporary substrate 30 may be performed by applying a laser 280 to the rear surface of the temporary substrate 30 . In some embodiments, when the micro LED chip package 10 is separated from the temporary substrate 30 , the bonding layer 242 may be located under the micro LED chip package 10 .

Here, the layout of the micro LED chip package 10 will be described with reference to FIG. 8 . The micro LED chip package 10 may have a micro LED chip 200 positioned on the left side. The micro LED chip 200 may include a first conductivity type semiconductor layer 110 , a light emitting layer 120 , and a second conductivity type semiconductor layer 130 . A first passivation layer 140a may be positioned around the emission layer 120 and the second conductivity-type semiconductor layer 130 . A second electrode pad 258 contacting the second conductivity type semiconductor layer 130 through the second pad contact hole 254 may be positioned on the second conductivity type semiconductor layer 130 . The size of the second electrode pad 258 , that is, the width in the X direction and the length in the Y direction may be larger than the size of the micro LED chip 200 .

The micro LED chip package 10 has a first electrode pad 260 in contact with the main electrode layer (248a in FIG. 7K), that is, the first electrode (248b in FIG. 7K) by the first pad contact hole 256 on the right side. Located. The size of the first electrode pad 260 may be determined by the size of the micro LED chip package 10 . In some embodiments, the size of the first electrode pad 260 may be the same as the size of the second electrode pad 2580 .

9 and 10 are cross-sectional views illustrating a method of manufacturing a micro LED chip package according to an embodiment of the present invention.

Specifically, in Figs. 9 and 10 , the same reference numerals as in Figs. 7A to 7K and 8 denote the same members. In FIGS. 9 and 10 , the contents described with reference to FIGS. 7A to 7K and 8 will be briefly described or omitted.

9 shows that when transferring (or transferring) the micro LED chip 200 from the source substrate 20 to the temporary substrate 30 in FIG. 7B , a bonding layer (242 in FIG. 7B ) is formed on the temporary substrate 30 . It is provided to explain a case where this is not the case. 9 may be a view after the manufacturing process of FIGS. 7C to 7I is performed.

FIG. 10 is provided to explain a case in which the bonding layer 242 is also etched when the separation holes 250a and 250b and the seed electrode layer 244a are formed in FIG. 7G . The temporary substrate 30 may be exposed by etching the bonding layer 242 . When the bonding layer 242 is etched, the micro LED chip package 10 including the micro LED chip 200 , the first electrode pad and the second electrode pad 258 , etc. is removed from the temporary substrate 30 of FIG. 7K . Separation can be made easier.

11A to 21 are views for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.

Specifically, FIGS. 11A to 20A and 21 are cross-sectional views, and FIGS. 11B to 20B are layout views. 11A to 21 are a red micro LED chip 210, a green micro LED chip 220, and a blue micro LED chip ( 230) may be identical.

11A to 21 , the same or similar reference numerals as those of FIGS. 7A to 7K and FIG. 8 may indicate the same or similar members. In FIGS. 11A to 21 , contents identical to or similar to those of FIGS. 7A to 7K and FIG. 8 will be briefly described or omitted. 11A to 21 , the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 are described as including the red micro LED chip 210 and the green micro LED chip. (220), even if at least one of the blue micro LED chip 230 is included, the present invention can be applied.

11A and 11B , the micro LED chip 200 is manufactured on the source substrates 20A, 20B, and 20C. A red micro LED chip 210 is manufactured on the first source substrate 20A. The red micro LED chip 210 includes a red light emitting layer LR. A plurality of red micro LED chips 210 may be manufactured to be spaced apart from each other on the first source substrate 20A. A red first passivation insulating material layer 240R may be formed on the red micro LED chip 210 .

A green micro LED chip 220 is manufactured on the second source substrate 20B. The green micro LED chip 220 includes a green light emitting layer LG. A plurality of green micro LED chips 220 may be manufactured to be spaced apart from each other on the second source substrate 20B. A green first passivation insulating material layer 240G may be formed on the green micro LED chip 220 .

A blue micro LED chip 230 is manufactured on the third source substrate 20C. The blue micro LED chip 230 includes a blue light emitting layer LB. A plurality of blue micro LED chips 230 may be manufactured to be spaced apart from each other on the third source substrate 20C. A first passivation insulating material layer 240B for blue color may be formed on the blue micro LED chip 230 .

12A and 12B , the micro LED chips 200 manufactured on the first to third source substrates 20A, 20B, and 20C are transferred (or transferred) to the temporary substrate 30 . The red micro LED chip 210 manufactured on the first source substrate 20A is transferred to the temporary substrate 30 .

The green micro LED chip 220 manufactured on the second source substrate 20B is spaced apart from the red micro LED chip 210 and transferred to the temporary substrate 30 . The blue micro LED chip 230 manufactured on the third source substrate 20C is spaced apart from the green micro LED chip 220 and transferred to the temporary substrate 30 . A bonding layer 242 is formed on the temporary substrate 30 .

Accordingly, the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 may be integrated on the bonding layer 242 . If necessary, the bonding layer 242 may not be formed on the temporary substrate 30 .

In FIGS. 12A and 12B , one red micro LED chip 210 , a green micro LED chip 220 , and a blue micro LED chip 230 manufactured on the first to third source substrates 20A, 20B, and 20C, respectively. ) is shown to be transferred (or transferred) to the temporary substrate 30, but this is exemplary and includes a plurality of red micro LED chips 210, a plurality of green micro LED chips 220, and a plurality of blue micro LED chips ( 230 may be transferred (or transferred) onto the temporary substrate 30 .

13A and 13B , a seed electrode material layer 244 is formed to surround the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . The seed electrode material layer 244 is formed over the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material layer 240B for blue and the temporary substrate 30 ) is formed on the bonding layer 242 on the .

14A and 14B , a sacrificial dam material layer ( 244 ) surrounding the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 is 246) is formed.

15A and 15B , a main electrode material layer 248 is formed on the seed electrode material layer 244 . The main electrode material layer 248 may be formed to be lower or higher than the height of the sacrificial dam material layer 246 . Accordingly, the main electrode material layer 248 is to be formed inside the sacrificial dam material layer 246 surrounding the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . can The main electrode material layer 248 may be formed on the seed electrode material layer 244 inside the sacrificial dam material layer 246 .

16A and 16B , the upper surfaces of the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material layer 240B for blue are etched. As a point, the main electrode material layer (248 in FIGS. 15A and 15B) and the sacrificial dam material layer (246 in FIGS. 15A and 15B) are planarized to form the main electrode layer 248a and the sacrificial dam 246a.

In other words, the main electrode material layer 248 and the sacrificial dam material layer 246 are etched to form the main electrode layer 248a and the sacrificial dam 246a while exposing the upper surface of the first passivation material layer 240 . When the main electrode material layer 248 and the sacrificial dam material layer 246 are etched, the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material layer for blue color The seed electrode material layer 244 on the material layer 240B may also be etched. In FIG. 16B , the seed electrode material layer 244 is not shown for convenience.

17A and 17B, the bonding layer 242 is removed and etched by removing and etching the sacrificial dam (246a in FIGS. 16A and 16B) and the seed electrode material layer (244 in FIGS. 16A and 16B) in the sacrificial dam 246a. Separation holes 250a and 250b and a seed electrode layer 244a exposing are formed. The separation holes 250a and 250b may be formed to surround the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . In FIG. 17B , the seed electrode layer 244a is not shown for convenience.

A seed electrode layer 244a may be formed in the seed electrode material layer 244 by forming the separation holes 250a and 250b. In addition, the seed electrode layer 244a and the main electrode layer 248a contacting both sides of the micro LED chip 200 by the formation of the separation holes 250a and 250b become the first electrode 248b. The first electrode 248b may be in contact with both sides of the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . The first electrode 248b may be in contact with both sides of the first conductive semiconductor layer (110 in FIG. 2A ) of the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . have.

18A and 18B , a second passivation material is formed on the front surfaces of the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 in which the separation holes 250a and 250b are formed. A layer 252 is formed. That is, the second passivation material layer 252 is formed inside the separation holes 250a and 250b and on the bonding layer 242 , on the main electrode layer 248a , and on the first passivation material layer 240 . to form

19A and 19B, a first passivation insulating material layer for red (240R), a first passivation insulating material layer for green (240G), and a first passivation insulating material layer for blue color (240B) and a second passivation material layer ( 252) is patterned. Accordingly, the second conductivity type semiconductor of the first pad contact hole 256 exposing the main electrode layer 248a , the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . A red second pad contact hole 254R, a green second pad contact hole 254G, and a blue second pad contact hole 254B for exposing the layer 130, respectively, are formed.

The first passivation insulating material layer 240R for red color, the first passivation insulating material layer 240G for green color, and the first passivation insulating material layer 240B for blue color, the second passivation material layer and the second passivation material layer 252. A red first passivation insulating layer 240Ra, a green first passivation insulating layer 240Ga, a blue first passivation insulating layer 240Ba, and a second passivation insulating layer 252a are formed by patterning. In addition, the second passivation material layer 252 on the bonding layer 242 in the separation holes 250a and 250b is removed by patterning the second passivation material layer 252 so that the surface of the bonding layer 242 is exposed. can

20A and 20B , a first electrode pad 260 contacting the main electrode layer 248a is formed in the first pad contact hole 256 in FIGS. 19A and 19B . A red color including a second red electrode 257R in a second red pad contact hole (254R of FIG. 19A ) exposing the second conductivity type semiconductor layer (130 of FIG. 2A ) of the red micro LED chip 210 . A second electrode pad 258R is formed.

A green second electrode including a green second electrode 257G in a green second pad contact hole 254G exposing the second conductivity-type semiconductor layer (130 in FIG. 2A) of the green micro LED chip 220 A pad 258G is formed. The blue second electrode including the blue second electrode 257B in the blue second pad contact hole 254B exposing the second conductivity type semiconductor layer (130 of FIG. 2A ) of the blue micro LED chip 230 . A pad 2578B is formed.

Accordingly, the red second electrode 257R, the green second electrode 257G, and the blue second electrode 257B are the red micro LED chip 210, the green micro LED chip 220, and the blue micro LED, respectively. The chip 230 may be in contact with the surface of the second conductivity-type semiconductor layer 130 of FIG. 2A .

Referring to FIG. 21A , a red micro LED chip 210 , a green micro LED chip 220 , a blue micro LED chip 230 , a second electrode pad 258R for red, and a second electrode pad 258R for green from the temporary substrate 30 . The micro LED chip package 10-3 including the electrode pad 258G, the second blue electrode pad 258B, and the like is separated. Since the layout of the micro LED chip package 10-3 has been described with reference to FIG. 20B, it is omitted. The micro LED chip package 10 - 3 may have a width W3 and a length L3 . In the micro LED chip package 10 - 3 , the width W3 and the length L3 may be in a ratio of 1:1.

In some embodiments, the separation of the micro LED chip package 10 - 3 from the temporary substrate 30 may be performed by applying a laser 280 to the rear surface of the temporary substrate 30 . In some embodiments, when the micro LED chip package 10 - 3 is separated from the temporary substrate 30 , the bonding layer 242 may be located under the micro LED chip package 10 - 3 .

22 is a layout diagram of a micro LED chip package according to an embodiment of the present invention.

Specifically, the micro LED chip package 10 - 4 may be identical to the micro LED chip package 10 - 3 of FIGS. 11A to 21A and FIGS. 11B to 20B , except for a different size. In Fig. 22, the same reference numerals as in Figs. 11A to 21A and Figs. 11B to 20B denote the same members. In FIG. 22 , the descriptions of FIGS. 11A to 21A and FIGS. 11B to 20B are briefly described or omitted.

The micro LED chip package 10 - 4 includes a micro LED chip 200 . The micro LED chip 200 may include a red micro LED chip 210 , a green micro LED chip 220 , and a blue micro LED chip 230 positioned apart from each other. In the first pad contact hole ( 256 in FIGS. 19A and 19B ), the first electrode pad 260 contacting the main electrode layer ( 248a in FIG. 19A ), that is, the first electrode ( 248b in FIG. 19A ) is positioned.

A red second electrode pad 258R including a red second electrode 257R is formed in the red second pad contact hole 254R. A green second electrode pad 258G including a green second electrode 257G is formed in the green second pad contact hole 254G. A blue second electrode pad 258B including a blue second electrode 257B is formed in the blue second pad contact hole 254B. The micro LED chip package 10 - 4 may have a width W4 and a length L4 . In the micro LED chip package 10 - 4 , the width W4 and the length L4 may be in a ratio of 1:1 to 1 to 1.6.

Above, the present invention has been described with reference to the embodiment shown in the drawings, but this is only exemplary, and it will be understood by those skilled in the art that various modifications, substitutions and equivalent other embodiments are possible therefrom. will be. The true technical protection scope of the present invention should be defined by the technical spirit of the appended claims.

10: micro LED chip package, 258: second electrode pad, 260: first electrode pad, 252a: passivation layer. 200: micro LED chip, 110: first conductivity type semiconductor layer, 120: light emitting layer, 130: second conductivity type semiconductor layer, MS: mesa structure, 248b: first electrode, 257: second electrode, 260: first electrode pad, 256: second electrode pad

Claims (20)

a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer;
a first electrode in contact with one side of the first conductivity-type semiconductor layer;
a second electrode in contact with the surface of the second conductivity-type semiconductor layer; and
and a passivation layer electrically separating the first electrode and the second electrode. The micro LED chip package according to claim 1, wherein the first electrode surrounds the first conductivity-type semiconductor layer and contacts both sides of the first conductivity-type semiconductor layer. The micro LED chip package according to claim 1, wherein a width of the first electrode is greater than a width of the micro LED chip. The micro LED chip package according to claim 1, wherein a top surface of the first electrode is positioned higher than a top surface of the second conductivity-type semiconductor layer. The micro LED chip package according to claim 1, wherein a first electrode pad and a second electrode pad positioned horizontally apart from each other while being separated by a passivation layer are disposed on the first electrode and the second electrode, respectively. . The micro LED chip package according to claim 1, wherein the second electrode is in contact with a part or all of a surface of the second conductivity type semiconductor layer. The micro LED chip package according to claim 1, wherein the passivation layer is formed on one side of the light emitting layer and one side of the second conductivity type semiconductor layer. According to claim 1, wherein the micro LED chip comprises at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip that are horizontally spaced apart from each other,
The first electrode is in contact with both sides of the first conductive semiconductor layer of the red micro LED chip, the green micro LED chip and the blue micro LED chip,
The second electrode is in contact with the surface of the second conductivity type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip. a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer, wherein the width of the upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer is the first conductivity type semiconductor layer a micro LED chip with a mesa structure smaller than the width of the lower part of the;
a first electrode in contact with one or both surfaces of a lower portion of the first conductivity-type semiconductor layer and having an upper surface higher than an upper surface of the second conductivity-type semiconductor layer;
a second electrode in contact with a part or all of a surface of the second conductivity type semiconductor layer; and
and a passivation layer electrically separating the first electrode and the second electrode. The micro LED chip package according to claim 9, wherein a step portion exposed by the mesa structure is installed on one side of a lower portion of the first conductivity type semiconductor layer. The method of claim 10, wherein the passivation layer is disposed on one side of the light emitting layer, one side of the second conductivity-type semiconductor layer, and a part of the step portion,
A portion of the step portion is in contact with the first electrode micro LED chip package. The micro LED chip package according to claim 10, wherein the passivation layer is disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and the step portion. The method according to claim 9, wherein the passivation layer is disposed to expose a portion of the surface of the second conductivity type semiconductor layer and a portion of the surface of the first electrode on the upper surface of the first electrode and the upper surface of the second electrode, ,
A micro LED chip package, characterized in that the first electrode pad and the second electrode pad are respectively disposed on the first electrode and the second electrode spaced apart horizontally from each other. 10. The method of claim 9, wherein the micro LED chip comprises at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned horizontally apart from each other,
The first electrode is in contact with both sides of the first conductive semiconductor layer of the red micro LED chip, the green micro LED chip and the blue micro LED chip,
The second electrode is in contact with the surface of the second conductivity type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip. manufacturing a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer on a source substrate;
forming a first passivation layer on the second conductivity type semiconductor layer of the micro LED chip;
separating the micro LED chip on which the first passivation layer is formed from the source substrate and transferring the micro LED chip onto a temporary substrate;
forming a seed electrode layer on the first passivation layer and on the temporary substrate while surrounding the micro LED chip;
forming a sacrificial dam spaced apart from the micro LED chip on the seed electrode layer around the micro LED chip;
forming a main electrode layer on the seed electrode layer in the sacrificial dam to form a first electrode in contact with both sides of the first conductivity-type semiconductor layer and including the seed electrode layer and the main electrode layer;
forming separation holes by removing the sacrificial dam and etching the seed electrode layer under the sacrificial dam;
forming a second passivation layer in the first passivation layer, the first electrode, and the separation hole;
patterning the first and second passivation layers to form a first pad contact hole exposing the main electrode layer and a second pad contact hole exposing a second conductivity type semiconductor layer of the micro LED chip;
A first electrode pad contacting the main electrode layer is formed in the first pad contact hole, and a second electrode pad including a second electrode contacting the second conductivity type semiconductor layer is formed in the second pad contact hole. to do; and
and separating the micro LED chip from the temporary substrate to complete the micro LED chip package. 16. The method of claim 15, In the manufacturing step of the micro LED chip, the micro LED chip is an upper portion of the first conductivity type semiconductor layer, the light emitting layer and the width of the second conductivity type semiconductor layer is the first conductivity type semiconductor Method of manufacturing a micro LED chip package, characterized in that it is manufactured to have a mesa structure smaller than the width of the lower portion of the layer. 16. The method of claim 15, wherein in the step of transferring the micro LED chip from the source substrate onto the temporary substrate, a bonding layer is further formed on the temporary substrate. The method of claim 15, wherein forming the first electrode comprises:
forming the main electrode layer on the seed electrode layer in the sacrificial dam while sufficiently covering the micro LED chip;
and exposing the first passivation layer by planarizing and etching the main electrode layer, the seed electrode layer, and the sacrificial dam. The method of claim 15, wherein the manufacturing of the micro LED chip on the source substrate comprises:
and manufacturing at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip on the first source substrate, the second source substrate, and the third source substrate, respectively. manufacturing method. The method of claim 19, wherein the step of transferring the micro LED chip from the source substrate onto a temporary substrate comprises:
transferring at least one of the red micro LED chip, the green micro LED chip, and the blue micro LED chip on the first source substrate, the second source substrate, and the third source substrate onto the temporary substrate; A method of manufacturing a micro LED chip package comprising:

Images