KR102571793B1 - Micro-LED chip package and manufacturing method therof - Google Patents

Abstract

The micro LED chip package of the present invention includes a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode in contact with one side surface of the first conductivity type semiconductor layer; a second electrode in contact with the surface of the second conductivity type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode. The micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned apart from each other horizontally. The first electrode contacts both side surfaces of the first conductivity-type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip, and the second electrode contacts the red micro LED chip and the green micro LED chip. and a surface of the second conductivity type semiconductor layer of the blue micro LED chip.

Description

Micro-LED chip package and manufacturing method thereof {Micro-LED chip package and manufacturing method therof}

The present invention relates to a micro-LED chip package and a manufacturing method therof, and more particularly, to a micro-LED chip package and manufacturing method therof, which can reduce package manufacturing cost, facilitate package testing, and reduce package defects. It relates to an LED chip package and a manufacturing method thereof.

The present invention is derived from research conducted and conducted by LC Square Co., Ltd. as part of the Small and Medium Venture Business Technology Startup Investment Linkage Project (TIPS, private investment-led technology start-up support) [Research period: 2019.7.1-2021.6. 30 (24 months), Entrepreneurship Team: LC Square Co., Ltd., Operator: Korea University Technology Holdings, Management Organization: Korea Angel Investment Association, Professional Institution: Small and Medium Business Technology Information Promotion Agency, Business Name: Technology Startup Investment Connection, Research Project Name: Micro LED display core technology and component development, project identification number: S2767485].

The micro LED chip package may be a package using a subminiature LED light emitting diode chip having a size (ie, width and length) of 100 μm or less. Since the micro LED chip included in the micro LED chip package is very small, it is not easy to test it. In addition, the width or length of the micro LED chip included in the micro LED chip package is larger than the thickness, so cracks occur, resulting in package defects.

An object of the present invention is to provide a micro LED chip package capable of facilitating package testing and reducing package defects.

In addition, another problem to be solved by the present invention is to provide a novel manufacturing method of the above-described micro LED chip package.

In order to solve the above problems, a micro LED chip package according to an embodiment of the present invention includes a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer; a first electrode in contact with one side surface of the first conductivity type semiconductor layer; a second electrode in contact with the surface of the second conductivity type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode.
The micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned horizontally apart from each other, and the first electrode includes the red micro LED chip, the green micro LED chip, and the blue micro LED chip. Both side surfaces of the first conductivity type semiconductor layer of the micro LED chip are in contact. The second electrode makes contact with surfaces of the second conductivity type semiconductor layers of the red micro LED chip, the green micro LED chip, and the blue micro LED chip.

In one embodiment of the present invention, the first electrode may surround the first conductivity-type semiconductor layer and contact both side surfaces of the first conductivity-type semiconductor layer. A width of the first electrode may be greater than a width of the micro LED chip. A top surface of the first electrode may be positioned higher than a top surface of the second conductivity type semiconductor layer.

In one embodiment of the present invention, a first electrode pad and a second electrode pad may be disposed on the first electrode and the second electrode, separated by a passivation layer and positioned horizontally apart from each other. The second electrode may contact part or all of the surface of the second conductivity type semiconductor layer.

The passivation layer may be formed on one side of the light emitting layer and one side of the second conductivity type semiconductor layer.

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A micro LED chip package according to an embodiment of the present invention includes a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer, and includes an upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer. a micro LED chip having a mesa structure in which a width of the type semiconductor layer is smaller than a width of a lower portion of the first conductivity type semiconductor layer; a first electrode contacting one side surface or both side surfaces of the lower portion of the first conductivity type semiconductor layer and having a top surface higher than the top surface of the second conductivity type semiconductor layer; a second electrode contacting part or all of the surface of the second conductivity type semiconductor layer; and a passivation layer electrically separating the first electrode and the second electrode.
The micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned horizontally apart from each other. The first electrode contacts both side surfaces of the first conductivity-type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip, and the second electrode contacts the red micro LED chip and the green micro LED chip. and a surface of the second conductivity type semiconductor layer of the blue micro LED chip.

In one embodiment of the present invention, a stepped portion exposed by the mesa structure may be installed on one side of a lower portion of the first conductivity type semiconductor layer. The passivation layer may be disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and a portion of the stepped portion, and a portion of the stepped portion may be in contact with the first electrode.

In one embodiment of the present invention, the passivation layer may be disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and the stepped portion. The passivation layer may be disposed on the top surface of the first electrode and the top surface of the second electrode to expose a part of the surface of the second conductivity type semiconductor layer and a part of the surface of the first electrode. A first electrode pad and a second electrode pad that are horizontally apart from each other may be disposed on the first electrode and the second electrode, respectively.

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A method of manufacturing a micro LED chip package according to an embodiment of the present invention includes manufacturing a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer on a source substrate; forming a first passivation layer on the second conductivity type semiconductor layer of the micro LED chip; separating the micro LED chip on which the first passivation layer is formed from the source substrate and transferring it onto a temporary substrate; forming a seed electrode layer on the temporary substrate and on top of the first passivation layer while surrounding the micro LED chip; and forming a sacrificial dam spaced apart from the micro LED chip on the seed electrode layer around the micro LED chip.

In the method of manufacturing a micro LED chip package according to an embodiment of the present invention, a main electrode layer is formed on the seed electrode layer in the sacrificial dam to contact both sides of the first conductivity type semiconductor layer and is composed of the seed electrode layer and the main electrode layer forming a first electrode; forming a separation hole by removing the sacrificial dam and etching a seed electrode layer under the sacrificial dam; forming a second passivation layer within the first passivation layer, the first electrode, and the separation hole; patterning the first and second passivation layers to form a first pad contact hole exposing the main electrode layer and a second pad contact hole exposing a second conductive semiconductor layer of the micro LED chip; A first electrode pad contacting the main electrode layer is formed in the first pad contact hole, and a second electrode pad including a second electrode contacting the second conductivity-type semiconductor layer is formed in the second pad contact hole. doing; and separating the micro LED chip from the temporary substrate to complete a micro LED chip package.

In one embodiment of the present invention, in the manufacturing step of the micro LED chip, in the micro LED chip, the upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have widths of the first It may be manufactured to have a mesa structure smaller than the width of the lower portion of the conductive semiconductor layer.

In one embodiment of the present invention, in the step of transferring the micro LED chip from the source substrate to the temporary substrate, a bonding layer may be further formed on the temporary substrate.

In one embodiment of the present invention, forming the first electrode,

Forming the main electrode layer on the seed electrode layer in the sacrificial dam while sufficiently covering the micro LED chip, and planarizing the main electrode layer, the seed electrode layer, and the sacrificial dam to expose the first passivation layer. includes

In one embodiment of the present invention, the manufacturing of the micro LED chip on the source substrate may include a red micro LED chip, a green micro LED chip, and a blue micro LED chip on the first source substrate, the second source substrate, and the third source substrate, respectively. and manufacturing at least one of the micro LED chips.

In one embodiment of the present invention, the step of separating the micro LED chip from the source substrate and transferring it to the temporary substrate may include the red micro LED on the first source substrate, the second source substrate, and the third source substrate. and transferring at least one of a chip, the green micro LED chip, and the blue micro LED chip onto the temporary substrate.

The micro LED chip package of the present invention can easily perform a package test. In addition, the micro LED chip package of the present invention can suppress cracks and reduce package defects.

1 is a plan view of a micro LED chip package according to an embodiment of the present invention.
FIG. 2A is a cross-sectional view taken along the line IIa-IIa' of FIG. 1 .
Figure 2b is a layout diagram of components surrounding the micro LED chip of Figure 2a.
3 is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.
4A is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.
Figure 4b is a layout view of components surrounding the micro LED chip of Figure 4a.
Figure 5a is a plan view showing that the micro LED chip used in the micro LED chip package of the present invention is implemented on a source substrate.
5B is a plan view showing a micro LED chip of a comparative example implemented on a source substrate.
6A is a cross-sectional view of a micro LED chip package implemented by employing the micro LED chip implemented on the source substrate of FIG. 5A.
6B is a cross-sectional view of a micro LED chip of a comparative example implemented on the source substrate of FIG. 5A.
7A to 7K are cross-sectional views illustrating a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
8 is a layout view of a micro LED chip package according to an embodiment of the present invention.
9 and 10 are cross-sectional views for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
11A to 21 are diagrams for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.
22 is a layout diagram of a micro LED chip package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments of the present invention may be implemented with only one, and also, the following embodiments may be implemented in combination of one or more. Accordingly, the present invention should not be construed as limited to one embodiment.

1 is a plan view of a micro LED chip package according to an embodiment of the present invention, FIG. 2a is a cross-sectional view taken along the line IIa-IIa' of FIG. 1, and FIG. 2b is a layout of components surrounding the micro LED chip of FIG. 2a. It is also

Specifically, in FIGS. 1, 2A, and 2B, the X direction is the width direction of the package (or chip), the Y direction is the length direction of the package (or chip), and the Z direction is the package ( Or the thickness (thickness) direction of the chip). The Z direction may be a direction perpendicular to the X-Y plane by the X and Y directions.

The micro light emitting diode (LED) chip package 10 may be a chip scale package. As shown in FIG. 1, the micro LED chip package 10 includes a second electrode pad 258, a first electrode pad 260 spaced apart from the second electrode pad 258 in the X direction, and a second electrode pad. 258 and a passivation layer 252a insulating between the first electrode pad 260 may be included. The first electrode pad 260 may be an electrode pad of a first conductivity type, for example, an N-type electrode pad, and the second electrode pad 258 may be an electrode pad of a second conductivity type, for example, a P-type electrode pad.

An example of the cross-sectional structure of the micro LED chip package 10 shown in FIG. 1 is shown in FIG. 2A. The micro LED chip package 10 includes the micro LED chip 200 .

The micro LED chip 200 may be a red micro LED chip, a green micro LED chip, or a blue micro LED chip. An emission wavelength of a red micro LED chip, a green micro LED chip, or a blue micro LED chip may vary according to a semiconductor bandgap. Blue micro LED chips can be manufactured based on GaN. Although the green micro LED chip is based on GaN, it can be manufactured by adjusting the band gap by changing the composition ratio of the quantum well structure material (InGaN), which is a light emitting region, from that of the blue micro LED chip. Red micro LED chips can be fabricated based on GaAs.

The micro LED chip 200 may include a first conductivity type semiconductor layer 110, a light emitting layer 120, and a second conductivity type semiconductor layer 130 on the semiconductor layer 100 that is not doped with impurities. The first conductivity-type semiconductor layer 110 may be an N-type semiconductor layer. The second conductivity-type semiconductor layer 130 may be a P-type semiconductor layer.

The micro LED chip 200 may include a mesa structure MS including an upper portion of the second conductivity type semiconductor layer 130 , the light emitting layer 120 and the first conductivity type semiconductor layer 110 . The width W1 of the mesa structure may be smaller than the width W2 of the lower portion of the first conductive semiconductor layer 110 . When the micro LED chip 200 is manufactured, the mesa structure MS may be formed by etching portions of the second conductivity type semiconductor material layer, the light emitting material layer, and the first conductivity type semiconductor material layer.

A step portion MP exposed by the mesa structure MS may be positioned on one side of the lower portion of the first conductivity type semiconductor layer 110 . In this embodiment, the mesa structure (MS) is included in the micro LED chip 200, but the micro LED chip 200 does not include the mesa structure (MS) as needed, and the first conductivity type semiconductor layer 110, the light emitting layer (120) and the width of the second conductivity type semiconductor layer 130 may be the same.

The micro LED chip package 10 includes a first electrode 248b contacting the side surface 110S of the first conductive semiconductor layer. In some embodiments, the first electrode 248b may contact one side surface 110S of the lower portion of the first conductivity type semiconductor layer 110 . In some embodiments, the first electrode 248b may contact both side surfaces of the lower portion of the first conductivity type semiconductor layer 110 . In some embodiments, since the first electrode 248b surrounds the micro LED chip 200, the width of the first electrode, that is, the length in the X direction may be greater than the width W2 of the micro LED chip.

In some embodiments, the top surface of the first electrode 248b may have a higher top surface than the top surface of the second conductivity type semiconductor layer 130 . The first electrode 248b may contact a partial surface of the stepped portion MP. A partial surface of the stepped portion MP may be a surface 110F of a lower portion of the first conductivity type semiconductor layer 110 . The micro LED chip package 10 includes passivation layers 240a and 252a electrically separating the first electrode 248b and the second electrode 257 to be described later. The passivation layers 240a and 252a may include a first passivation layer 240a and a second passivation layer 252a.

The first passivation layer 240a is formed on both side surfaces of the mesa structure MS, a portion of the stepped portion MP, and a portion of the surface of the second conductivity type semiconductor layer 130 . The second passivation layer 252a is formed on both side surfaces of the first electrode 248b, the surface of the first electrode 248b, and the first passivation layer 240a. The micro LED chip package 10 may include a second electrode 257 contacting the surface of the second conductive semiconductor layer 130 . The second electrode 257 may contact a portion of the surface of the second conductivity type semiconductor layer 130 .

The micro LED chip package 10 may include a first electrode pad 260 and a second electrode pad 258 electrically contacting the first electrode 248b and the second electrode 257 , respectively. The first electrode pad 260 and the second electrode pad 258 may be positioned horizontally apart from each other while being separated by passivation layers 240a and 252a on the first electrode 248b and the second electrode 257, respectively. can

As shown in FIG. 2B, in the micro LED chip package 10, the first passivation layer 240a is positioned to surround the second conductivity type semiconductor layer 130, and the first passivation layer 240a surrounds the first passivation layer 240a. A lower portion of the type semiconductor layer 110 may be located. In addition, the lower portion of the first conductivity type semiconductor layer 110 is surrounded by the first electrode 248b, and one side surface 110S of the first conductivity type semiconductor layer 110 is attached to the first electrode 248b. surrounded by contact.

As described above, the micro LED chip package 10 may support the micro LED chip 200 by positioning the first electrode 248b to surround the micro LED chip 200 . In this case, the manufacturing process of the micro LED chip 200 or the additional process of handling the micro LED chip package 10, for example, when the micro LED chip package 10 is mass-transferred to a display substrate or bonded to another electronic substrate. By suppressing cracks in the chip package 10 , package defects may be reduced.

3 is a cross-sectional view of a micro LED chip package according to an embodiment of the present invention.

Specifically, the structure of the first passivation layer 240a' and the second electrode 257' in the micro LED chip package 10-1 compared to the micro LED chip package 10 of FIGS. 1, 2a and 2b. may be the same except that In FIG. 3, the contents described in FIGS. 1, 2A, and 2B are briefly described or omitted.

The micro LED chip package 10-1 may include first passivation layers 240a' formed on both side surfaces of the mesa structure MS. In the micro LED chip package 10-1, the second electrode 257' contacting the second conductivity type semiconductor layer 130 is formed on the entire surface of the second conductivity type semiconductor layer 130. The second passivation layer 252a' is formed on the first passivation layer 240a' on both sides of the mesa structure MS and on a portion of the second electrode 257' on the second conductivity type semiconductor layer 130. has been

The micro LED chip package 10-1 includes the second electrode 257' contacting the whole or all of the second conductive semiconductor layer 130 to emit light more reliably from the light emitting layer 120. can

4A is an example of a cross-sectional view of a micro LED chip package according to an embodiment of the present invention, and FIG. 4B is a layout view of components surrounding the micro LED chip of FIG. 4A.

Specifically, the micro LED chip package 10-2 may be identical to the micro LED chip package 10 of FIGS. 1, 2a and 2b except for the structure of the first passivation layer 240a" being different. In FIGS. 4A and 4B , the contents described in FIGS. 1 , 2A and 2B are briefly described or omitted.

The micro LED chip package 10-2 may include a first passivation layer 240a″ formed on both side surfaces of the mesa structure MS, a portion of the surface of the second conductivity type semiconductor layer, and an upper surface of the stepped portion MP. The first passivation layer 240a″ is formed on the entire surface of the stepped portion MP. In addition, one side surface of the first passivation layer 240a″ may be coplanar with one side surface of the first conductivity type semiconductor layer 110 .

As shown in FIG. 4B, the micro LED chip package 10-2 has a first passivation layer ( 240a″) may be positioned and a lower portion of the first conductivity type semiconductor layer 110 may be positioned to surround the first passivation layer 240a″. In addition, the lower portion of the first conductivity type semiconductor layer 110 is surrounded by the first electrode 248b, and one side surface 110S of the first conductivity type semiconductor layer 110 is attached to the first electrode 248b. surrounded by contact.

As described above, the micro LED chip package 10-2 includes the first passivation layer 240a" formed on the entire surface of the stepped portion MP to protect the mesa structure MS and to protect the micro LED chip 200. ) By placing the first electrode 248b on one side of the micro LED chip 200, it is possible to suppress the occurrence of cracks.

5A is a plan view showing a micro LED chip used in the micro LED chip package of the present invention implemented on a source substrate, and FIG. 5B is a plan view showing a micro LED chip of a comparative example implemented on a source substrate.

Specifically, FIG. 5a shows that the micro LED chip 200 used in the micro LED chip package (10 in FIGS. 1, 2a, and 2b) of the present invention is implemented on the source substrate 20. The source substrate 20 may be a sapphire substrate, a silicon (Si) substrate, a gallium arsenide (GaAs) substrate, a gallium phosphide (GaP) substrate, a gallium arsenic phosphide (GaAsP) substrate, a silicon carbide (SiC) substrate, or a potassium nitrogen (GaN) substrate. , any one of an aluminum nitrogen (AlN) substrate, a zinc oxide (ZnO) substrate, and a magnesium oxide (MgO) substrate may be used. The source substrate 20 may be a semiconductor substrate. The source substrate 20 may be a wafer. The micro LED chip 200 may include a first conductivity type semiconductor layer 110 , a light emitting layer 120 and a second conductivity type semiconductor layer 130 .

A second electrode pad 258 may be positioned on the light emitting layer 120 and the second conductive semiconductor layer 130 . On the micro LED chip 200, the first electrode pad is not formed and only the second electrode pad 258 is disposed. 5A shows a small size of the second electrode pad 258 for convenience. As shown in FIG. 5A , 24 micro LED chips 200 may be implemented on the source substrate 20 .

5B shows a micro LED chip 200P of a comparative example implemented on the source substrate 20 . The micro LED chip 200P of the comparative example includes a first conductivity type semiconductor layer 110P and a light emitting layer 120P. A second conductivity type semiconductor layer 130P may be included. A first electrode pad 260P may be disposed on the first conductive semiconductor layer 110P, and a second electrode pad 258P may be disposed on the light emitting layer 120P and the second conductive semiconductor layer 130P.

A first electrode pad 260P and a second electrode pad 258P are disposed on the micro LED chip 200 of the comparative example. As shown in FIG. 5B , 12 micro LED chips 200P of the comparative example may be implemented on the source substrate 20 .

When comparing FIGS. 5A and 5B, the micro LED chip 200 used in the micro LED chip package (10 in FIGS. 1, 2A, and 2B) of the present invention has only the second electrode pad 258 placed thereon for comparison. More may be implemented in the source substrate 20 than examples. In this way, when more micro LED chips 200 are implemented on the source substrate 20, the manufacturing cost of the micro LED chip 200 or the micro LED chip package (10 in FIGS. 1, 2a, and 2b) can be reduced. .

In addition, the micro LED chip 200 used in the micro LED chip package (10 in FIGS. 1, 2a, and 2b) of the present invention has the size of the second electrode pad 258, that is, the width in the X direction and the width in the Y direction. length can be freely adjusted.

Accordingly, the size of the micro LED chip package (10 in FIGS. 1, 2a, and 2b) of the present invention can be freely adjusted. In addition, in the micro LED chip package (10 in FIGS. 1, 2a, and 2b), it is easier to make the second electrode pad 258 of the micro LED chip 200 larger than the micro LED chip package (FIG. 1 , the electrical test of FIGS. 2A and 10) of FIG. 2B can be easily performed.

6A is a cross-sectional view of a micro LED chip package implemented by employing the micro LED chip implemented on the source substrate of FIG. 5A, and FIG. 6B is a cross-sectional view of a micro LED chip of a comparative example implemented on the source substrate of FIG. 5A.

Specifically, since the micro LED chip package 10 of FIG. 6a has been described in FIGS. 1, 2a, and 2b, a structural description thereof will be omitted. The micro LED chip package 10 may support the micro LED chip 200 as a support structure AR. The support structure AR may include a first electrode 248b, a first electrode pad 260, and/or a second passivation layer 252a. During the manufacturing process of the micro LED chip 200 or an additional process of handling the micro LED chip package 10, cracks in the micro LED chip package 10 may be reduced due to the support structure AR.

On the other hand, the micro LED chip 200P of the comparative example of FIG. 6B includes a first conductivity type semiconductor layer 110P and a light emitting layer 120P. A second conductivity type semiconductor layer 130P may be included. A first electrode pad 260P may be disposed on the first conductivity-type semiconductor layer 110P, and a second electrode pad 258P may be disposed on the second conductivity-type semiconductor layer 130P. The top of the first conductivity-type semiconductor layer 110P, the light emitting layer 120P, and the second conductivity-type semiconductor layer 130P constitute a mesa structure MSP.

A first electrode contact area PAR may be located on one side of the micro LED chip 200P of the comparative example. In the micro LED chip 200P of the comparative example, a larger number of chips cannot be manufactured on the source substrate ( 20 in FIG. 5B ) due to the first electrode contact area PAR. In the micro LED chip 200P of the comparative example, cracks may easily occur at the boundary between the mesa structure MSP and the first conductivity type semiconductor layer 110P due to the mesa structure MSP due to the formation of the first electrode contact region PAR. there is.

As described above, the micro LED chip package 10 of the present invention supports the micro LED chip 200 with the support structure AR, thereby manufacturing the micro LED chip 200 or an additional process of handling the micro LED chip package 10. cracking can be reduced.

7A to 7K are cross-sectional views illustrating a manufacturing method of a micro LED chip package according to an embodiment of the present invention, and FIG. 8 is a layout view of a micro LED chip package according to an embodiment of the present invention.

Specifically, FIGS. 7a to 7k and FIG. 8 are provided to explain a method of manufacturing the micro LED chip package 10 of FIGS. 1 , 2a and 2b. In FIGS. 7A to 7K and FIG. 8 , reference numerals identical or similar to those in FIGS. 1 , 2A and 2B denote the same members. In FIGS. 7A to 7K and FIG. 8 , the contents described in FIGS. 1 , 2A and 2B are briefly described or omitted.

Referring to FIG. 7A , a micro LED chip 200 is manufactured on a source substrate 20 . A plurality of micro LED chips 200 may be manufactured on the source substrate 20 and spaced apart from each other. Although FIG. 7A shows two micro LED chips 200 on the source substrate 20 , a plurality of micro LED chips 200 may be manufactured on the source substrate 20 . The micro LED chip 200 may include a semiconductor layer 100 not doped with impurities, a first conductivity type semiconductor layer 110 , a light emitting layer 120 and a second conductivity type semiconductor layer 130 .

The micro LED chip 200 may include a mesa structure (MS). In the micro LED chip 200 , a stepped portion MP exposed by the mesa structure MS may be formed on one side of the lower portion of the first conductivity type semiconductor layer 110 .

A first passivation insulating material layer 240 is formed on both sides and the surface of the mesa structure MS. A first passivation insulating material layer 240 is formed on the top and side surfaces of the second conductivity type semiconductor layer 130, both sides of the light emitting layer 120, and both sides of the upper portion of the first conductivity type semiconductor layer 110. do.

Referring to FIG. 7B , the micro LED chip 200 on which the first passivation insulating material layer 240 is formed on the source substrate 20 is transferred (or transferred) to the temporary substrate 30 . The temporary substrate 30 may be referred to as an intermediate substrate or an interposer substrate.

A bonding layer 242 is formed on the temporary substrate 30 . In FIG. 7B, it is shown that one micro LED chip 200 manufactured on the source substrate 20 is transferred (or transferred) to the temporary substrate 30, but this is exemplary and a plurality of micro LED chips 200 are transferred. It can be transferred (or transferred) onto the temporary substrate 30 .

Referring to FIGS. 7C and 7D , as shown in FIG. 7C , a seed is placed on the top of the first passivation material layer 240 and the bonding layer 242 on the temporary substrate 30 while surrounding the micro LED chip 200 . An electrode material layer 244 is formed.

Subsequently, as shown in FIG. 7D , a sacrificial dam material layer 246 is formed on the seed electrode material layer 244 around the micro LED chip 200 and spaced apart from the micro LED chip 200 .

Referring to FIGS. 7E and 7F , as shown in FIG. 7E , a main electrode material layer 248 is formed on the seed electrode material layer 244 . The height of the main electrode material layer 248 may be lower or higher than that of the sacrificial dam material layer 246 . Accordingly, the main electrode material layer 248 may be formed inside the sacrificial dam material layer 246 surrounding the micro LED chip 200 . The main electrode material layer 248 may be formed on the seed electrode material layer 244 inside the sacrificial dam material layer 246 .

Subsequently, as shown in FIG. 7F, the main electrode material layer 248 and the sacrificial dam material layer 246 are planarized using the upper surface of the first passivation material layer 240 as an etch stop, thereby forming the main electrode layer 248a. and a sacrificial dam 246a. In other words, the main electrode material layer 248 and the sacrificial dam material layer 246 are etched to expose the upper surface of the first passivation material layer 240 to form the main electrode layer 248a and the sacrificial dam 246a.

Referring to FIGS. 7G and 7H , as shown in FIG. 7G , a separation hole exposing the bonding layer 242 by removing and etching the sacrificial dam 246a and the seed electrode material layer 244 in the sacrificial dam 246a Fields 250a and 250b and a seed electrode layer 244a are formed. The separation holes 250a and 250b may be formed to surround the micro LED chip 200 .

Separation holes 250a and 250b may be formed on one side and the other side of the micro LED chip 200, respectively. The distance from the micro LED chip 200 to the separation hole 250a on one side may be different from the distance to the separation hole 250b on the other side. For example, the distance from the micro LED chip 200 to the separation hole 250a on one side may be smaller than the distance to the separation hole 250b on the other side.

By forming the separation holes 250a and 250b, the seed electrode material layer 244 may form the seed electrode layer 244a. In addition, by forming the separation holes 250a and 250b, the seed electrode layer 244a and the main electrode layer 248a contacting both sides of the micro LED chip 200 become the first electrode 248b.

Subsequently, as shown in FIG. 7H, a second passivation material layer 252 is formed on the entire surface of the micro LED chip 200 in which the separation holes 250a and 250b are formed. That is, the second passivation material layer 252 is formed on the inside of the separation holes 250a and 250b, the top of the bonding layer 242, the top of the main electrode layer 248a, and the first passivation material layer 240. form

Referring to FIGS. 7I and 7J , as shown in FIG. 7I , the first pad contact hole exposing the main electrode layer 248a by patterning the first passivation material layer 240 and the second passivation material layer 252 ( 256) and the second pad contact hole 254 exposing the second conductive semiconductor layer 130 of the micro LED chip 200. By patterning the first passivation material layer 240 and the second passivation material layer 252, the first passivation material layer 240 and the second passivation material layer 252 are formed by the first passivation layer 240a and the second passivation material layer 240a. layer 252a. The second passivation material layer 252 on the bonding layer 242 in the separation holes 250a and 250b is removed by the patterning of the second passivation material layer 252, so that the surface of the bonding layer 242 may be exposed. .

Subsequently, as shown in FIG. 7J , a first electrode pad 260 contacting the main electrode layer 248a is formed in the first pad contact hole ( 256 in FIG. 7I ). A second electrode pad 258 including a second electrode 257 contacting the second conductivity type semiconductor layer 130 is formed in the second pad contact hole ( 254 in FIG. 7I ).

Referring to FIG. 7K , the micro LED chip package 10 including the micro LED chip 200 , the first electrode pad and the second electrode pad 258 is separated from the temporary substrate 30 . In some embodiments, the separation of the micro LED chip package 10 from the temporary substrate 30 may be performed by applying a laser 280 to the rear surface of the temporary substrate 30 . In some embodiments, when the micro LED chip package 10 is separated from the temporary substrate 30 , the bonding layer 242 may be positioned below the micro LED chip package 10 .

Here, the layout of the micro LED chip package 10 will be described with reference to FIG. 8 . The micro LED chip 200 may be positioned on the left side of the micro LED chip package 10 . The micro LED chip 200 may include a first conductivity type semiconductor layer 110 , a light emitting layer 120 , and a second conductivity type semiconductor layer 130 . A first passivation layer 140a may be positioned around the light emitting layer 120 and the second conductive semiconductor layer 130 . A second electrode pad 258 contacting the second conductivity type semiconductor layer 130 through the second pad contact hole 254 may be positioned on the second conductivity type semiconductor layer 130 . The size of the second electrode pad 258, that is, the width in the X direction and the length in the Y direction, may be larger than the size of the micro LED chip 200.

The micro LED chip package 10 has a first electrode pad 260 in contact with the main electrode layer (248a in FIG. 7K), that is, the first electrode (248b in FIG. 7K) by the first pad contact hole 256 on the right side. Located. The size of the first electrode pad 260 may be determined by the size of the micro LED chip package 10 . In some embodiments, the size of the first electrode pad 260 may be the same as that of the second electrode pad 2580 .

9 and 10 are cross-sectional views for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.

Specifically, in FIGS. 9 and 10, the same reference numerals as in FIGS. 7A to 7K and 8 denote the same members. In FIGS. 9 and 10 , the contents described in FIGS. 7A to 7K and 8 are briefly described or omitted.

FIG. 9 shows that when the micro LED chip 200 is transferred (or transferred) from the source substrate 20 to the temporary substrate 30 in FIG. 7B, a bonding layer (242 in FIG. 7B) is formed on the temporary substrate 30. It is provided to explain the case where it is not. 9 may be a view after the manufacturing process of FIGS. 7c to 7i.

FIG. 10 is provided to explain a case in which the bonding layer 242 is also etched when forming the separation holes 250a and 250b and the seed electrode layer 244a in FIG. 7G. The temporary substrate 30 may be exposed by etching the bonding layer 242 . When the bonding layer 242 is etched, the micro LED chip package 10 including the micro LED chip 200, the first electrode pad and the second electrode pad 258 is removed from the temporary substrate 30 of FIG. 7K. Separation can be made easier.

11A to 21 are views for explaining a method of manufacturing a micro LED chip package according to an embodiment of the present invention.

Specifically, FIGS. 11A to 20A and FIG. 21 are cross-sectional views, and FIGS. 11B to 20B are layout views. 11A to 21 show a red micro LED chip 210, a green micro LED chip 220, and a blue micro LED chip ( 230) may be the same except for including.

In FIGS. 11A to 21 , the same or similar reference numerals as those in FIGS. 7A to 7K and FIG. 8 may denote the same or similar members. In FIGS. 11A to 21 , contents identical to or similar to those of FIGS. 7A to 7K and FIG. 8 are briefly described or omitted. In FIGS. 11A to 21, it is described as including a red micro LED chip 210, a green micro LED chip 220, and a blue micro LED chip 230, but a red micro LED chip 210 and a green micro LED chip. 220, the present invention can be applied even if at least one of the blue micro LED chip 230 is included.

Referring to FIGS. 11A and 11B , a micro LED chip 200 is fabricated on source substrates 20A, 20B, and 20C. A red micro LED chip 210 is fabricated on the first source substrate 20A. The red micro LED chip 210 includes a red light emitting layer LR. A plurality of red micro LED chips 210 may be manufactured on the first source substrate 20A and spaced apart from each other. A first passivation insulating material layer 240R for red color may be formed on the red micro LED chip 210 .

A green micro LED chip 220 is fabricated on the second source substrate 20B. The green micro LED chip 220 includes a green light emitting layer LG. A plurality of green micro LED chips 220 may be manufactured on the second source substrate 20B and spaced apart from each other. A green first passivation insulating material layer 240G may be formed on the green micro LED chip 220 .

A blue micro LED chip 230 is fabricated on the third source substrate 20C. The blue micro LED chip 230 includes a blue light emitting layer (LB). A plurality of blue micro LED chips 230 may be manufactured to be spaced apart from each other on the third source substrate 20C. A first passivation insulating material layer 240B for blue may be formed on the blue micro LED chip 230 .

Referring to FIGS. 12A and 12B , the micro LED chips 200 fabricated on the first to third source substrates 20A, 20B, and 20C are transferred (or transferred) to the temporary substrate 30 . The red micro LED chip 210 manufactured on the first source substrate 20A is transferred to the temporary substrate 30 .

The green micro LED chip 220 manufactured on the second source substrate 20B is separated from the red micro LED chip 210 and transferred to the temporary substrate 30 . The blue micro LED chip 230 manufactured on the third source substrate 20C is separated from the green micro LED chip 220 and transferred to the temporary substrate 30 . A bonding layer 242 is formed on the temporary substrate 30 .

Accordingly, the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 may be integrated on the bonding layer 242 . If necessary, the bonding layer 242 may not be formed on the temporary substrate 30 .

12A and 12B, one red micro LED chip 210, one green micro LED chip 220, and one blue micro LED chip 230 are respectively manufactured on the first to third source substrates 20A, 20B, and 20C. ) to the temporary substrate 30, but this is exemplary and includes a plurality of red micro LED chips 210, a plurality of green micro LED chips 220, and a plurality of blue micro LED chips ( 230) may be transferred (or transferred) onto the temporary substrate 30.

Referring to FIGS. 13A and 13B , a seed electrode material layer 244 is formed to surround the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . The seed electrode material layer 244 is an upper portion of the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material layer 240B for blue and the temporary substrate 30 ) on the bonding layer 242.

Referring to FIGS. 14A and 14B , a sacrificial dam material layer ( 246) form.

Referring to FIGS. 15A and 15B , a main electrode material layer 248 is formed on the seed electrode material layer 244 . The height of the main electrode material layer 248 may be lower or higher than that of the sacrificial dam material layer 246 . Accordingly, the main electrode material layer 248 is formed inside the sacrificial dam material layer 246 surrounding the red micro LED chip 210, the green micro LED chip 220, and the blue micro LED chip 230. can The main electrode material layer 248 may be formed on the seed electrode material layer 244 inside the sacrificial dam material layer 246 .

16A and 16B, the upper surfaces of the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material layer 240B for blue are etched. The main electrode layer 248a and the sacrificial dam 246a are formed by planarizing the main electrode material layer ( 248 in FIGS. 15A and 15B ) and the sacrificial dam material layer ( 246 in FIGS. 15A and 15B ) as points.

In other words, the main electrode material layer 248 and the sacrificial dam material layer 246 are etched to expose the upper surface of the first passivation material layer 240 to form the main electrode layer 248a and the sacrificial dam 246a. When the main electrode material layer 248 and the sacrificial dam material layer 246 are etched, the first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, and the first passivation insulating material for blue The seed electrode material layer 244 on the material layer 240B may also be etched. 16B, the seed electrode material layer 244 is not shown for convenience.

Referring to FIGS. 17A and 17B , the bonding layer 242 is formed by removing and etching the sacrificial dam ( 246a in FIGS. 16A and 16B ) and the seed electrode material layer ( 244 in FIGS. 16A and 16B ) in the sacrificial dam 246a. Separation holes 250a and 250b exposing and a seed electrode layer 244a are formed. The separation holes 250a and 250b may be formed to surround the red micro LED chip 210 , the green micro LED chip 220 , and the blue micro LED chip 230 . In FIG. 17B, for convenience, the seed electrode layer 244a is not shown.

By forming the separation holes 250a and 250b, the seed electrode material layer 244 may form the seed electrode layer 244a. In addition, by forming the separation holes 250a and 250b, the seed electrode layer 244a and the main electrode layer 248a contacting both sides of the micro LED chip 200 become the first electrode 248b. The first electrode 248b may contact both sides of the red micro LED chip 210 , the green micro LED chip 220 and the blue micro LED chip 230 . The first electrode 248b may contact both side surfaces of the first conductivity type semiconductor layer ( 110 in FIG. 2A ) of the red micro LED chip 210 , the green micro LED chip 220 and the blue micro LED chip 230 . there is.

Referring to FIGS. 18A and 18B , a second passivation material is formed on front surfaces of the red micro LED chip 210, the green micro LED chip 220, and the blue micro LED chip 230 in which the separation holes 250a and 250b are formed. Layer 252 is formed. That is, the second passivation material layer 252 is formed on the inside of the separation holes 250a and 250b, the top of the bonding layer 242, the top of the main electrode layer 248a, and the first passivation material layer 240. form

19A and 19B, a first passivation insulating material layer 240R for red, a first passivation insulating material layer 240G for green, a first passivation insulating material layer 240B for blue, and a second passivation material layer ( 252) is patterned. Accordingly, the second conductivity type semiconductor of the first pad contact hole 256 exposing the main electrode layer 248a, the red micro LED chip 210, the green micro LED chip 220, and the blue micro LED chip 230 A red second pad contact hole 254R, a green second pad contact hole 254G, and a blue second pad contact hole 254B exposing the layer 130, respectively, are formed.

The first passivation insulating material layer 240R for red, the first passivation insulating material layer 240G for green, the first passivation insulating material layer 240B for blue, the second passivation material layer, and the second passivation material layer 252. A first passivation insulating layer 240Ra for red, a first passivation insulating layer 240Ga for green, a first passivation insulating layer 240Ba for blue, and a second passivation layer 252a are formed by patterning. In addition, the second passivation material layer 252 on the bonding layer 242 in the separation holes 250a and 250b is removed by patterning the second passivation material layer 252, so that the surface of the bonding layer 242 is exposed. can

Referring to FIGS. 20A and 20B , a first electrode pad 260 contacting the main electrode layer 248a is formed in the first pad contact hole ( 256 of FIGS. 19A and 19B ). The second electrode 257R for red is included in the second red pad contact hole (254R in FIG. 19A) exposing the second conductivity-type semiconductor layer (130 in FIG. 2A) of the red micro LED chip 210. A second electrode pad 258R is formed.

A green second electrode including a green second electrode 257G in the green second pad contact hole 254G exposing the second conductivity type semiconductor layer ( 130 in FIG. 2A ) of the green micro LED chip 220 . A pad 258G is formed. A blue second electrode including a blue second electrode 257B in the blue second pad contact hole 254B exposing the second conductivity type semiconductor layer ( 130 in FIG. 2A ) of the blue micro LED chip 230 . A pad 2578B is formed.

Accordingly, the second electrode 257R for red, the second electrode 257G for green, and the second electrode 257B for blue are the red micro LED chip 210, the green micro LED chip 220, and the blue micro LED, respectively. It may contact the surface of the second conductivity type semiconductor layer ( 130 in FIG. 2A ) of the chip 230 .

Referring to FIG. 21A , from the temporary substrate 30, a red micro LED chip 210, a green micro LED chip 220, a blue micro LED chip 230, a second electrode pad 258R for red, and a second electrode pad for green The micro LED chip package 10-3 including the electrode pad 258G and the second electrode pad 258B for blue is separated. Since the layout of the micro LED chip package 10-3 has been described in FIG. 20B, it is omitted. The micro LED chip package 10-3 may have a width W3 and a length L3. In the micro LED chip package 10-3, the ratio of the width W3 and the length L3 may be 1:1.

In some embodiments, the separation of the micro LED chip package 10 - 3 from the temporary substrate 30 may be performed by applying a laser 280 to the rear surface of the temporary substrate 30 . In some embodiments, when the micro LED chip package 10 - 3 is separated from the temporary substrate 30 , the bonding layer 242 may be positioned below the micro LED chip package 10 - 3 .

22 is a layout diagram of a micro LED chip package according to an embodiment of the present invention.

Specifically, the micro LED chip package 10-4 may be the same as the micro LED chip package 10-3 of FIGS. 11A to 21A and 11B to 20B except for a different size. In Fig. 22, the same reference numerals as in Figs. 11A to 21A and Figs. 11B to 20B denote the same members. In FIG. 22, the contents described in FIGS. 11A to 21A and 11B to 20B are briefly described or omitted.

The micro LED chip package 10-4 includes the micro LED chip 200. The micro LED chip 200 may include a red micro LED chip 210, a green micro LED chip 220, and a blue micro LED chip 230 that are spaced apart from each other. In the first pad contact hole ( 256 of FIGS. 19A and 19B ), a first electrode pad 260 contacting the main electrode layer ( 248a of FIG. 19A ), that is, the first electrode ( 248B of FIG. 19A ) is positioned.

A second electrode pad 258R for red including a second electrode 257R for red is formed in the second pad contact hole 254R for red. A green second electrode pad 258G including a green second electrode 257G is formed in the green second pad contact hole 254G. A second electrode pad 258B for blue including a second electrode 257B for blue is formed in the second pad contact hole 254B for blue. The micro LED chip package 10-4 may have a width W4 and a length L4. In the micro LED chip package 10-4, the width W4 and the length L4 may be in a ratio of 1:1 to 1:1.6.

Although the present invention has been described with reference to the embodiments shown in the drawings, it is only exemplary, and those skilled in the art will understand that various modifications, substitutions, and equivalent other embodiments are possible therefrom. will be. The true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: micro LED chip package, 258: second electrode pad, 260: first electrode pad, 252a: passivation layer. 200: micro LED chip, 110: first conductivity type semiconductor layer, 120: light emitting layer, 130: second conductivity type semiconductor layer, MS: mesa structure, 248b: first electrode, 257: second electrode, 260: first electrode pad, 256: second electrode pad

Claims (20)

A micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer;
a first electrode in contact with one side surface of the first conductivity type semiconductor layer;
a second electrode in contact with the surface of the second conductivity type semiconductor layer; and
Including a passivation layer electrically separating the first electrode and the second electrode,
The micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned apart from each other horizontally,
The first electrode contacts both side surfaces of the first conductivity type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip;
The second electrode is micro LED chip package, characterized in that in contact with the surface of the second conductivity type semiconductor layer of the red micro LED chip, green micro LED chip and blue micro LED chip. The micro LED chip package according to claim 1, wherein the first electrode surrounds the first conductivity type semiconductor layer and makes contact with both side surfaces of the first conductivity type semiconductor layer. The micro LED chip package according to claim 1 , wherein a width of the first electrode is greater than a width of the micro LED chip. The micro LED chip package according to claim 1, wherein an upper surface of the first electrode is located higher than an upper surface of the second conductive semiconductor layer. The micro LED chip package according to claim 1 , wherein a first electrode pad and a second electrode pad are disposed on the first electrode and the second electrode, separated by a passivation layer and spaced apart horizontally from each other. . The micro LED chip package according to claim 1, wherein the second electrode makes contact with part or all of the surface of the second conductivity type semiconductor layer. The micro LED chip package according to claim 1, wherein the passivation layer is formed on one side of the light emitting layer and one side of the second conductivity type semiconductor layer. delete A first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer, wherein the upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have widths of the first conductivity type semiconductor layer. a micro LED chip having a mesa structure smaller than a width of a lower portion of the;
a first electrode contacting one side surface or both side surfaces of the lower portion of the first conductivity type semiconductor layer and having a top surface higher than the top surface of the second conductivity type semiconductor layer;
a second electrode contacting part or all of the surface of the second conductivity type semiconductor layer; and
Including a passivation layer electrically separating the first electrode and the second electrode,
The micro LED chip includes at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip positioned horizontally apart from each other;
The first electrode contacts both side surfaces of the first conductivity type semiconductor layer of the red micro LED chip, the green micro LED chip, and the blue micro LED chip;
The second electrode is micro LED chip package, characterized in that in contact with the surface of the second conductivity type semiconductor layer of the red micro LED chip, green micro LED chip and blue micro LED chip. 10. The micro LED chip package according to claim 9, wherein a stepped portion exposed by the mesa structure is installed on one side of the lower portion of the first conductivity type semiconductor layer. 11. The method of claim 10, wherein the passivation layer is disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and a portion of the stepped portion,
A micro LED chip package, characterized in that a part of the stepped portion is in contact with the first electrode. 11. The micro LED chip package of claim 10, wherein the passivation layer is disposed on one side of the light emitting layer, one side of the second conductivity type semiconductor layer, and the stepped portion. 10. The method of claim 9, wherein the passivation layer is disposed on the top surface of the first electrode and the top surface of the second electrode to expose a part of the surface of the second conductivity type semiconductor layer and a part of the surface of the first electrode, ,
A micro LED chip package, characterized in that a first electrode pad and a second electrode pad are disposed on the first electrode and the second electrode, respectively, horizontally apart from each other. delete Manufacturing a micro LED chip including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer on a source substrate;
forming a first passivation layer on the second conductivity type semiconductor layer of the micro LED chip;
separating the micro LED chip on which the first passivation layer is formed from the source substrate and transferring it onto a temporary substrate;
forming a seed electrode layer on the temporary substrate and on top of the first passivation layer while surrounding the micro LED chip;
forming a sacrificial dam spaced apart from the micro LED chip on the seed electrode layer around the micro LED chip;
forming a main electrode layer on the seed electrode layer within the sacrificial dam to form a first electrode that contacts both side surfaces of the first conductivity type semiconductor layer and is composed of the seed electrode layer and the main electrode layer;
forming a separation hole by removing the sacrificial dam and etching a seed electrode layer under the sacrificial dam;
forming a second passivation layer within the first passivation layer, the first electrode, and the separation hole;
patterning the first and second passivation layers to form a first pad contact hole exposing the main electrode layer and a second pad contact hole exposing a second conductive semiconductor layer of the micro LED chip;
A first electrode pad contacting the main electrode layer is formed in the first pad contact hole, and a second electrode pad including a second electrode contacting the second conductivity-type semiconductor layer is formed in the second pad contact hole. doing; and
The manufacturing method of the micro LED chip package comprising the step of separating the micro LED chip from the temporary substrate to complete the micro LED chip package. 16. The method of claim 15, wherein in the manufacturing step of the micro LED chip, in the micro LED chip, the upper portion of the first conductivity type semiconductor layer, the light emitting layer, and the second conductivity type semiconductor layer have widths of the first conductivity type semiconductor layer. A method of manufacturing a micro LED chip package, characterized in that it is manufactured to have a mesa structure smaller than the width of the lower portion of the layer. 16. The method of claim 15, wherein in the step of transferring the micro LED chip from the source substrate to the temporary substrate, a bonding layer is further formed on the temporary substrate. 16. The method of claim 15, wherein forming the first electrode comprises:
Forming the main electrode layer on the seed electrode layer in the sacrificial dam while sufficiently covering the micro LED chip;
The method of manufacturing a micro LED chip package comprising the step of exposing the first passivation layer by planarization etching the main electrode layer, the seed electrode layer, and the sacrificial dam. 16. The method of claim 15, wherein the step of manufacturing the micro LED chip on the source substrate,
Manufacturing at least one of a red micro LED chip, a green micro LED chip, and a blue micro LED chip on a first source substrate, a second source substrate, and a third source substrate, respectively. manufacturing method. The method of claim 19, wherein the step of separating the micro LED chip from the source substrate and transferring it onto the temporary substrate,
transferring at least one of the red micro LED chip, the green micro LED chip, and the blue micro LED chip on the first source substrate, the second source substrate, and the third source substrate onto the temporary substrate; Method for manufacturing a micro LED chip package, characterized in that it comprises.

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