KR20210120904A - Electromagnetic wave attenuator, electronic device, film formation apparatus and film formation method - Google Patents

Abstract

An objective of the present invention is to provide an electromagnetic wave attenuation body capable of improving the attenuation characteristics for electromagnetic wave, an electronic device, a film deposition device, and a film deposition method. The electromagnetic wave attenuation body according to an embodiment of the present invention includes a first structure. The first structure includes a first member including a first magnetic layer and a first nonmagnetic layer with conductivity provided alternately in a first direction as a lamination direction, a second member including a second magnetic layer and a second nonmagnetic layer with conductivity provided alternately in the first direction, and a third member including a third nonmagnetic layer with conductivity. The direction from the third member to the first member is along the first direction. The direction from the third member to the second member is along the first direction. A first magnetic layer thickness of the first magnetic layer along the first direction is larger than a second magnetic layer thickness of the second magnetic layer along the first direction.

Description

Electromagnetic wave attenuator, electronic device, film forming apparatus and film forming method

An embodiment of the present invention relates to an electromagnetic wave attenuator, an electronic device, a film forming apparatus, and a film forming method.

For example, electromagnetic wave attenuators, such as an electromagnetic shield sheet, have been proposed. There is an electronic device including an electromagnetic wave attenuator and a semiconductor element. In an electromagnetic wave damping body, it is desired to improve the attenuation characteristic with respect to an electromagnetic wave.

[Patent Document 1] Japanese Patent Laid-Open No. 2012-38807

Embodiments of the present invention provide an electromagnetic wave damping body, an electronic device, a film forming apparatus, and a film forming method capable of improving the attenuation characteristics for electromagnetic waves.

According to an embodiment of the present invention, the electromagnetic wave damping body includes a first structure. The first structure includes a first member including first magnetic layers and conductive first non-magnetic layers alternately provided in a first direction, which is a stacking direction, and second magnetic layers and conductive second layers alternately provided in the first direction. A second member including a non-magnetic layer and a third member including a third conductive non-magnetic layer are included. A direction from the third member to the first member is along the first direction. A direction from the third member to the second member is along the first direction. A thickness of the first magnetic layer along the first direction of the first magnetic layer is greater than a thickness of the second magnetic layer along the first direction of the second magnetic layer.

1(a) to 1(d) are schematic cross-sectional views illustrating an electromagnetic wave attenuator according to the first embodiment.
2 is a schematic cross-sectional view illustrating an electronic device according to an embodiment.
3A to 3F are schematic cross-sectional views illustrating an electromagnetic wave attenuator according to the first embodiment.
4(a) to 4(d) are schematic diagrams illustrating electromagnetic wave attenuators according to the first embodiment.
5 is a graph illustrating the characteristics of the electromagnetic wave attenuator.
6 is a schematic diagram illustrating a film forming apparatus according to a second embodiment.
7 is a schematic diagram illustrating a film forming apparatus according to a second embodiment.
Fig. 8 is a schematic longitudinal sectional view taken along line AA of Fig. 6 illustrating the film forming apparatus according to the second embodiment.
9 is a functional block diagram illustrating a control device of the film forming apparatus according to the second embodiment.
10 is a perspective view illustrating a tray on which an electronic device is disposed in the film forming apparatus according to the second embodiment.
11 is a flowchart illustrating the operation of the film forming apparatus according to the second embodiment.

EMBODIMENT OF THE INVENTION Below, each embodiment of this invention is described, referring drawings.

The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. are not necessarily the same as the actual ones. Even in the case of representing the same part, there are cases in which the lengths or ratios of each other are displayed differently depending on the drawings.

In this specification and each drawing, the same code|symbol is attached|subjected to the same element as that mentioned above with respect to an existing drawing, and detailed description is abbreviate|omitted as appropriate.

(First embodiment)

1(a) to 1(d) are schematic cross-sectional views illustrating an electromagnetic wave attenuator according to the first embodiment.

2 is a schematic cross-sectional view illustrating an electronic device according to an embodiment.

As shown in FIG. 1A , the electromagnetic wave attenuator 110 according to the embodiment is used in the electronic device 210 . The electronic device 210 according to the embodiment includes an electromagnetic wave attenuator 110 and a base 55 .

As shown in FIG. 2 , in the electronic device 210 of the present embodiment, an electromagnetic wave attenuator is provided on the top surface 42a and the side surface 42b of the package 42 in which the electronic element 51 is sealed. (110) is formed. The package 42 in which the electronic element 51 is sealed is an example of the base body 55 . In order to obtain a damping effect, the electromagnetic wave damping body 110 may be formed at least on the top surface 42a of the package 42 . The electromagnetic wave damping body 110 of the side surface 42b is for grounding. The top surface 42a of the package 42 is an outer surface opposite to the surface mounted on the product. When it arrange|positions horizontally, the ceiling surface 42a turns into the upper surface in a highest position. When mounted, the top surface 42a may face upwards or may not face upwards. The side surface 42b is an outer peripheral surface formed at a different angle with respect to the top surface 42a. An angle may be formed between the top surface 42a and the side surface 42b, and it may be continuous by a curved surface.

The electronic element 51 is a surface mount component such as a semiconductor chip, a diode, a transistor, a capacitor, or a SAW filter. In the following description, an example will be described in which a semiconductor chip is used as the electronic element 51 . The semiconductor chip referred to herein is configured as an integrated circuit in which a plurality of electronic elements are integrated. Hereinafter, for the convenience of description in the manufacturing apparatus and manufacturing process, even if it is a component in the state before forming the electromagnetic wave damping body 110, it may call the electronic device 210.

The electronic element 51 is mounted on the surface of the substrate 44 . In the substrate 44, a circuit pattern is formed on the surface of a plate made of ceramic, glass, epoxy resin, or the like. The electronic element 51 and the circuit pattern are connected by solder.

The package 42 is constituted by sealing with a synthetic resin so as to cover the electronic element 51 on the surface on which the electronic element 51 of the substrate 44 is mounted. The shape of the package 42 is a substantially rectangular parallelepiped shape. The electromagnetic wave attenuator 110 is a film|membrane which shields an electromagnetic wave.

For example, in the electronic element 51, electromagnetic waves are generated. The electromagnetic wave attenuator 110 attenuates the electromagnetic wave and suppresses the electromagnetic wave from radiating to the outside. For example, the electromagnetic wave attenuator 110 suppresses electromagnetic waves from the outside from reaching the electronic element 51 . The electromagnetic wave damping body 110 is laminated on the electronic device 51, for example, as shown in FIG. 1A.

As shown in (a) of Figure 1, the electromagnetic wave attenuator 110, includes a first structure (10A). The first structure 10A includes a first member 10 , a second member 20 , and a third member 30 .

As shown in FIG. 1B , the first member 10 includes a first magnetic layer 11 and a conductive first non-magnetic layer 12 alternately provided in a first direction to be described later. For example, a plurality of first magnetic layers 11 and a plurality of conductive first non-magnetic layers 12 are provided. One of the plurality of first non-magnetic layers 12 is provided between one of the plurality of first magnetic layers 11 and the other one of the plurality of first magnetic layers 11 . One of the plurality of first magnetic layers 11 is provided between one of the plurality of first non-magnetic layers 12 and the other one of the plurality of first non-magnetic layers 12 .

Let the 1st direction be a Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

As shown in FIG. 1C , the second member 20 includes second magnetic layers 21 and conductive second non-magnetic layers 22 alternately provided in the first direction (Z-axis direction). do. For example, a plurality of second magnetic layers 21 and a plurality of conductive second nonmagnetic layers 22 are provided. One of the plurality of second non-magnetic layers 22 is provided between one of the plurality of second magnetic layers 21 and the other one of the plurality of second magnetic layers 21 . One of the plurality of second magnetic layers 21 is provided between one of the plurality of second nonmagnetic layers 22 and the other one of the plurality of second nonmagnetic layers 22 .

As shown in FIG. 1D , the third member 30 includes a conductive third non-magnetic layer 32 . In this example, the third member 30 further includes a third magnetic layer 31 . The direction from the third magnetic layer 31 to the third non-magnetic layer 32 is along the first direction (Z-axis direction). In this example, for example, a plurality of third magnetic layers 31 and a plurality of conductive third nonmagnetic layers 32 are provided. One of the plurality of third nonmagnetic layers 32 is provided between one of the plurality of third magnetic layers 31 and the other of the plurality of third magnetic layers 31 . One of the plurality of third magnetic layers 31 is provided between one of the plurality of third non-magnetic layers 32 and the other of the plurality of third non-magnetic layers 32 .

As shown in FIG. 1A , the electromagnetic wave damping body 110 may further include a second structure 10B. The direction from the 2nd structure 10B to the 1st structure 10A is along the 1st direction (Z-axis direction). The second structure 10B includes, for example, at least one of Cr and Ni, and Fe. The second structure 10B may include, for example, stainless steel. In this example, the second structure 10B is provided between the base 55 and the first structure 10A. In this case, the 2nd structure 10B functions as a base layer, for example.

As shown in FIG. 1A , the electromagnetic wave damping body 110 may further include a third structure 10C. In the first direction (Z-axis direction), the first structure 10A is between the second structure 10B and the third structure 10C. The third structure 10C includes, for example, at least one of Cr and Ni, and Fe. The third structure 10C may include, for example, stainless steel. For example, the third structure 10C functions as a protective layer, for example. For example, the third structure 10C functions as, for example, an oxidation inhibiting layer.

As shown in FIG. 1A , in one example, the direction from the third member 30 to the first member 10 is along the first direction (Z-axis direction). In one example, the direction from the third member 30 to the second member 20 is along the first direction (Z-axis direction). The first direction (Z-axis direction) corresponds to the stacking direction, for example.

The plurality of first magnetic layers 11 and the plurality of first non-magnetic layers 12 spread along the X-Y plane. The plurality of second magnetic layers 21 and the plurality of second non-magnetic layers 22 spread along the X-Y plane. The third magnetic layer 31 and the third non-magnetic layer 32 spread along the X-Y plane.

As shown in FIG. 1A , the electromagnetic wave attenuator 110 may be electrically connected to the ground, for example. For example, the third member 30 may be connected to the ground by the conductive member 38 or the like.

3A to 3F are schematic cross-sectional views illustrating an electromagnetic wave attenuator according to the first embodiment.

As shown in FIGS. 3A to 3F , the order of the first member 10 , the second member 20 , and the third member 30 is arbitrary. For example, in one example, the second member 20 is between the first member 10 and the third member 30 (see FIGS. 3A and 3F ). In another example, the first member 10 is between the second member 20 and the third member 30 (see FIGS. 3B and 3D ). In another example, the third member 30 is located between the first member 10 and the second member 20 (see FIGS. 3C and 3E ).

As shown in FIG. 1B , the thickness (length) of the first magnetic layer 11 along the first direction (Z-axis direction) is defined as the first magnetic layer thickness t11. Let the thickness (length) of the first non-magnetic layer 12 along the first direction be the first non-magnetic layer thickness t12. For example, the sum of the product of the number of the plurality of first magnetic layers 11 and the thickness of the first magnetic layer t11 and the product of the number of the plurality of first non-magnetic layers 12 and the thickness of the first non-magnetic layer t12, It corresponds to the first member thickness t10 (refer to FIG. 1A ) along the first direction of the first member 10 .

As shown in FIG. 1C , the thickness (length) of the second magnetic layer 21 along the first direction (Z-axis direction) is defined as the second magnetic layer thickness t21 . Let the thickness (length) of the second nonmagnetic layer 22 along the first direction be the second nonmagnetic layer thickness t22. For example, the sum of the product of the number of the plurality of second magnetic layers 21 and the thickness of the second magnetic layer t21, and the product of the number of the plurality of second non-magnetic layers 22 and the thickness of the second non-magnetic layer t22, It corresponds to the second member thickness t20 (refer to FIG. 1A ) along the first direction of the second member 20 .

As shown in FIG. 1D , the thickness (length) of the third magnetic layer 31 along the first direction (Z-axis direction) is defined as the third magnetic layer thickness t31 . Let the thickness (length) of the third non-magnetic layer 32 along the first direction be the third non-magnetic layer thickness t32. For example, the sum of the product of the number of the plurality of third magnetic layers 31 and the thickness of the third magnetic layer t31, and the product of the number of the plurality of third non-magnetic layers 32 and the thickness of the third non-magnetic layer t32, It corresponds to the third member thickness t30 (refer to FIG. 1A ) along the first direction of the third member 30 .

As shown in (a) of FIG. 1 , the sum of the first member thickness t10 , the second member thickness t20 , and the third member thickness t30 is the first direction of the first structure 10A. corresponding to the first structure thickness tA. Let the thickness along the first direction of the second structure 10B be the second structure thickness tB. Let the thickness of the third structure 10C along the first direction be the third structure thickness tC. For example, the sum of the first structure thickness tA, the second structure thickness tB, and the third structure thickness tC corresponds to the thickness of the electromagnetic wave damping body 110 (thickness Te in FIG. 2 ).

In the embodiment, for example, the first magnetic layer thickness t11 is thicker than the second magnetic layer thickness t21. In the embodiment, for example, the crystallinity of at least a part of the first magnetic layer 11 is higher than that of at least a part of the second magnetic layer 21 . It was found that the electromagnetic wave attenuation body 110 including the first magnetic layer 11 and the second magnetic layer 21 can more effectively attenuate electromagnetic waves as will be described later.

Hereinafter, an example of the characteristic of an electromagnetic wave damping body is demonstrated.

The 1st sample has the following structures. In the first sample, the second structure 10B is made of stainless steel. The second structure thickness tB is about 100 nm.

In the first sample, the third member 30 is provided on the second structure 10B. The third member 30 includes a plurality of third magnetic layers 31 and a plurality of third non-magnetic layers 32 . The number of the plurality of third magnetic layers 31 is 10, and the number of the plurality of third nonmagnetic layers 32 is 10. The plurality of third magnetic layers 31 are NiFeCuMo layers. The plurality of third non-magnetic layers 32 are Cu layers. The third magnetic layer thickness t31 is 100 nm. The third non-magnetic layer thickness t32 is 100 nm. The third member thickness t30 is about 2 μm.

In the first sample, the second member 20 is provided on the third member 30 . The second member 20 includes a plurality of second magnetic layers 21 and a plurality of second non-magnetic layers 22 . The number of the plurality of second magnetic layers 21 is 40, and the number of the plurality of second nonmagnetic layers 22 is 40. The plurality of second magnetic layers 21 are NiFeCuMo layers. The plurality of second non-magnetic layers 22 are Ta layers. The second magnetic layer thickness t21 is 50 nm. The second non-magnetic layer thickness t22 is 5 nm. The second member thickness t20 is about 2 μm.

In the first sample, the first member 10 is provided on the second member 20 . The first member 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 12 . The number of the plurality of first magnetic layers 11 is seven, and the number of the plurality of first non-magnetic layers 12 is seven. The plurality of first magnetic layers 11 are NiFeCuMo layers. The plurality of first non-magnetic layers 12 are Ta layers. The first magnetic layer thickness t11 is 300 nm. The first non-magnetic layer thickness t12 is 5 nm. The first member thickness t10 is about 2 μm.

In the first sample, the third structure 10C is provided on the first member 10 . The third structure 10C includes stainless steel. The third structure thickness tC is about 300 nm. The thickness of the first sample is about 6.4 μm.

In the above-mentioned NiFeCuMo layer, the composition is Ni:Fe:Cu:Mo = 77:14:5:4 (atomic %).

In the second sample, the first member 10 is not provided. In the second sample, the number of the plurality of second magnetic layers 21 is 73, and the number of the plurality of second nonmagnetic layers 22 is 73. The plurality of second magnetic layers 21 are NiFeCuMo layers. The plurality of second non-magnetic layers 22 are Ta layers. The second magnetic layer thickness t21 is 50 nm. The second non-magnetic layer thickness t22 is 5 nm. The second member thickness t20 is about 4 μm. The configuration of the second sample other than the above is the same as that of the first sample.

In the first sample and the second sample, the voltage (dB µV) was measured as the attenuation characteristic for electromagnetic waves. That is, 20 x log ₁₀ (voltage / 1 ㎶ in case of electromagnetic wave attenuator) was measured. For example, the attenuation effect (dB ㎶) of an electromagnetic wave of a frequency of 170 kHz, that is, a voltage in the case of an electromagnetic wave attenuator is measured. As a result of the measurement, the attenuation effect of the first sample was -2.4 (dB µV). On the other hand, the attenuation effect of the second sample at a frequency of 170 kHz is -2.1 (dB ㎶). The larger the absolute value of (dB ㎶), the higher the attenuation effect and the higher the attenuation characteristic.

In this way, in the first sample, a higher damping effect than that in the second sample can be obtained. Since the thickness of the first sample is substantially the same as that of the second sample, it is considered that the difference between the first member 10 and the second member 20 provided in the first sample is related to the damping effect.

The difference in the damping effect in the first sample and the second sample may be related to the difference in crystallinity of the magnetic layer in these samples. In the first sample, for example, the crystallinity of at least a part of the first magnetic layer 11 is higher than that of at least a part of the second magnetic layer 21 . "High crystallinity" refers to, for example, a high crystallinity. "High crystallinity" refers to, for example, a high ratio (eg, 50% or more) of a region having a crystal structure in a certain region. "High crystallinity" indicates, for example, that a certain region includes a plurality of crystal grains. "Low crystallinity" refers to, for example, a low crystallinity. "Low crystallinity" refers to, for example, that the proportion of a region having a crystal structure in a certain region is low (for example, less than 50%). The "low crystallinity" state includes, for example, an amorphous state.

Hereinafter, an example of crystallinity is demonstrated.

4(a) to 4(d) are schematic diagrams illustrating electromagnetic wave attenuators according to the first embodiment. 4A and 4C illustrate the state of the first magnetic layer 11 . 4 (b) and 4 (d) illustrate the state of the second magnetic layer 21 .

4A and 4C , at least a portion of the first magnetic layer 11 includes first crystal grains 11g.

4B and 4D , in the embodiment, at least a portion of the second magnetic layer 21 may not include crystal grains.

As described above, at least a portion of the first magnetic layer 11 may be a crystal, and at least a portion of the second magnetic layer 21 may be amorphous. Crystal grains are not observed in the amorphous portion of the second magnetic layer 21 .

The magnetic permeability of the first magnetic layer 11 having a higher crystallinity than that of the second magnetic layer 21 as described above is lower than that of the second magnetic layer 21 as described above. It is thought that the attenuation characteristic of an electromagnetic wave improves by using the some magnetic layer from which magnetic permeability differs. As the reason, since the magnetic permeability and the coercive force have a negative correlation, for example, the first magnetic layer 11 having a low magnetic permeability is considered to have a large coercive force. And, since the magnetic permeability of the first magnetic layer 11 is lower than that of the second magnetic layer 21 , the coercive force of the first magnetic layer 11 is higher than that of the first magnetic layer 11 . It is considered to be larger than the coercive force of the magnetic layer 21 . For example, in the first magnetic layer 11, since the coercive force is large, it is considered that a component having a large power (magnetic field strength) in the electromagnetic wave is effectively attenuated. Therefore, when many components with large power (magnetic field strength) are included in the electromagnetic wave serving as noise, the electromagnetic wave serving as noise is effectively attenuated by the first magnetic layer 11 . On the other hand, when the power (magnetic field strength) is small, the attenuation effect is so high that the magnetic permeability is large. Therefore, when many components with small power (magnetic field strength) are included in the electromagnetic wave which becomes noise, it is effectively attenuated by the 2nd magnetic layer 21. As shown in FIG. Therefore, by using a plurality of magnetic layers having different magnetic permeability, it is considered that a high damping effect can be maintained even if the distribution of power (magnetic field strength) has a width. This is considered to be related to the fact that a higher damping characteristic can be obtained in the first sample than in the second sample.

Information regarding crystallinity in the first magnetic layer 11 and the second magnetic layer 21 can be obtained by, for example, a TEM (Transmission Electron Microscope) image or the like. For example, information regarding the crystallinity in the first magnetic layer 11 and the second magnetic layer 21 can be obtained by, for example, an X-ray diffraction image. The above-mentioned "crystal grains are not observed" indicates that information regarding crystallinity cannot be obtained, and indicates that, for example, no peak is observed when an X-ray diffraction image is observed.

5 is a graph illustrating the characteristics of the electromagnetic wave attenuator.

The horizontal axis in FIG. 5 is the frequency f1. The vertical axis of FIG. 5 is a parameter Pa1 corresponding to the attenuation effect of electromagnetic waves. A large parameter Pa1 corresponds to a high damping effect and a good damping characteristic. The parameter Pa1 corresponds to the attenuation effect (-dB) of the electromagnetic wave at the frequency f1 of 10 MHz to 10 GHz. The parameter Pa1 is a parameter indicating to what extent the electromagnetic wave is attenuated, which can be obtained using the result of measuring the electric field strength when the electromagnetic wave attenuator is present and the electric field strength in the absence of the electromagnetic wave attenuator. For this measurement, a measuring device having an electric wire that generates electromagnetic waves of a desired frequency by passing an electric current and a probe that detects the electric field strength was used. (-dB) in Fig. 5 indicates that the minus in front of the numerical value is moved forward by the unit dB. For example, 20 (-dB) has the same meaning as -20 (dB).

FIG. 5 exemplifies measurement results of characteristics of the third sample SPL3 , the fourth sample SPL4 , and the fifth sample SPL5 in addition to the above-described characteristics of the first sample SPL1 .

In the third sample SPL3, the third member 30, the second member 20, the first member 10, and the third structure 10C are provided on the second structure 10B in this order. do. In the third sample SPL3 , the number of the plurality of second nonmagnetic layers 22 in the second member 20 is 11 , and the number of the plurality of second magnetic layers 21 is 11 . The number of the plurality of first non-magnetic layers 12 in the first member 10 is 60, and the number of the plurality of first magnetic layers 11 is 60. The thickness and material of the second non-magnetic layer 22 , the second magnetic layer 21 , the first non-magnetic layer 12 , and the first magnetic layer 11 are the same as those in the first sample SPL1 . do. The second member thickness t20 is about 3 μm, and the first member thickness t10 is about 3 μm. The configuration except for this in the third sample SPL3 is the same as the configuration of the first sample SPL1 .

Also in the fourth sample SPL4 , the third member 30 , the second member 20 , the first member 10 , and the third structure 10C are provided on the second structure 10B in this order. do. In the fourth sample SPL4 , the third member 30 includes the third nonmagnetic layer 32 and does not include the third magnetic layer 31 . The third member 30 is a Cu layer. The thickness of the Cu layer (third non-magnetic layer thickness t32) is 2 mu m. The configuration except for this in the fourth sample SPL4 is the same as that of the third sample SPL3 .

The fifth sample SPL5 does not include the first member 10 , the second member 20 , and the third member 30 . The fifth sample SPL5 includes a Cu layer having a thickness of 5 µm.

As can be seen from FIG. 5 , in the first sample SPL1 at a frequency f1 of 10 MHz or more and 100 MHz or less, the attenuation effect substantially the same as that of the fifth sample SPL5 can be obtained. In the third sample SPL3 and the fourth sample SPL4 , higher attenuation characteristics can be obtained as compared with the fifth sample SPL5 .

The result of FIG. 5 exemplifies the characteristic in which the frequency f1 is 10 MHz or more. On the other hand, the characteristics of the frequency f1 of 10 MHz or less are, for example, as follows. At a frequency f1 of 170 kHz, the attenuation effect of the first sample SPL1 is -2.4 dB㎶, the attenuation effect of the third sample SPL3 is -2.7 dB㎶, and the fourth sample (SPL3) has a The attenuation effect in SPL4) is -2.2 dBµV. In contrast, the attenuation effect of the fifth sample SPL5 is -0.5 dBµV.

In this way, in the first sample SPL1, the third sample SPL3, and the fourth sample SPL4, at a frequency f1 of 10 MHz or less, a higher attenuation effect than that of the fifth sample SPL5 can be obtained. have.

Thus, in embodiment, in the frequency f1 of 100 kHz or more and 100 MHz or less, the attenuation effect higher than 5th sample SPL5 can be acquired. In embodiment, also in the frequency f1 of 100 MHz or more, the attenuation characteristic equal or more than 5th sample SPL5 can be acquired. According to the embodiment, it is possible to provide an electromagnetic wave attenuator and an electronic device capable of improving attenuation characteristics for electromagnetic waves.

In the embodiment, the first magnetic layer thickness t11 is, for example, 80 nm or more and 400 nm or less. The second magnetic layer thickness t21 is, for example, 10 nm or more and less than 80 nm. When the first magnetic layer thickness t11 is 80 nm or more and 400 nm or less, it is easy to obtain high crystallinity in the first magnetic layer 11 . When the thickness t21 of the second magnetic layer is 10 nm or more and less than 80 nm, for example, in the second magnetic layer 21, crystallinity tends to be low.

For example, the thickness of the first magnetic layer t11 is four or more times the thickness of the second magnetic layer t21. The difference in crystallinity in the first magnetic layer thickness t11 and the second magnetic layer thickness t21 is likely to occur due to such a thickness difference.

In the embodiment, for example, the number of the plurality of first magnetic layers 11 included in the first member 10 is preferably smaller than the number of the plurality of second magnetic layers 21 included in the second member 20 . do. Since the first magnetic layer 11 is thicker than the second magnetic layer 21, the number of the plurality of first magnetic layers 11 is small, so that it is easy to keep the overall thickness of the electromagnetic wave attenuator thin.

In the embodiment, for example, the first magnetic layer thickness t11 is preferably 1/2 or more of the first nonmagnetic layer thickness t12 in the first direction (Z-axis direction) of the first nonmagnetic layer 12 . Thereby, it is easy to obtain, for example, a high damping characteristic. For example, the thickness t21 of the second magnetic layer is preferably 1/2 or more of the thickness t22 of the second non-magnetic layer in the first direction of the second non-magnetic layer 22 . Thereby, it is easy to obtain, for example, a high damping characteristic.

The first non-magnetic layer thickness t12 is, for example, 10 nm or less. The second non-magnetic layer thickness t22 is, for example, 10 nm or less. When these thicknesses are small, for example, it is easy to keep the overall thickness of the electromagnetic wave damping body thin.

At least one of the first non-magnetic layer 12 and the second non-magnetic layer 22 includes, for example, at least one selected from the group consisting of Ta, Cr, and Ti. When the second non-magnetic layer 22 contains these materials, it is easy to obtain low crystallinity, for example, in the second magnetic layer 21 . The second non-magnetic layer 22 preferably includes the same material as the first non-magnetic layer 12 . Thereby, for example, a manufacturing process becomes simple, and it becomes easy to obtain high production efficiency.

In an embodiment, it is preferable that the third nonmagnetic layer 32 includes Cu. Thereby, it becomes easy to obtain a low electrical resistivity, and it becomes easy to obtain high attenuation characteristic in a high frequency region. The third non-magnetic layer 32 has an electrical resistivity lower than that of the first non-magnetic layer 12 and the second non-magnetic layer 22, and it is easy to obtain a high attenuation characteristic in a high frequency region.

In the embodiment, at least one of the first magnetic layer 11 and the second magnetic layer 21 includes a soft magnetic material. For example, at least one of the first magnetic layer 11 and the second magnetic layer 21 includes Ni and Fe. At least one of the first magnetic layer 11 and the second magnetic layer 21 includes, for example, Ni, Fe, Cu, and Mo. In this material containing Ni, Fe, Cu and Mo, the composition ratio of Ni is, for example, 75 atomic% or more and 80 atomic% or less, and the composition ratio of Cu is, for example, 1 atomic% or more and 6 atomic% or less, and the composition ratio of Mo is 3 atomic% or more and 5 atomic% or less, and the composition ratio of Fe is the remainder.

The composition of the first magnetic layer 11 is preferably substantially the same as that of the second magnetic layer 21 . Thereby, for example, a manufacturing process becomes simple, and it becomes easy to obtain high production efficiency.

For example, the first magnetic layer 11 and the second magnetic layer 21 include Ni, Fe, Cu, and Mo. The composition ratio of Ni in the first magnetic layer 11 is 0.9 times or more and 1.1 times or less of the composition ratio of Ni in the second magnetic layer 21 . For example, the composition ratio of Fe in the first magnetic layer 11 is 0.9 times or more and 1.1 times or less of the composition ratio of Fe in the second magnetic layer 21 .

The third member 30 may be composed of the third nonmagnetic layer 32 without including the third magnetic layer 31 . Alternatively, as in the first embodiment, the third member 30 may include the third magnetic layer 31 in addition to the third non-magnetic layer 32 (eg, Cu layer). In this case, the direction from the third magnetic layer 31 to the third non-magnetic layer 32 follows the first direction (Z-axis direction) (refer to Fig. 1(d) ). The third magnetic layer thickness t31 along the first direction of the third magnetic layer 31 may be the same as the third nonmagnetic layer thickness t32 along the first direction of the third nonmagnetic layer 32 . For example, the third magnetic layer thickness t31 may be 0.75 times or more and 1.25 times or less the third nonmagnetic layer thickness t32.

In electronic devices (eg, semiconductor devices), it is required to suppress the influence of electromagnetic waves. For example, an electromagnetic wave attenuator is installed in the electronic device. In the electromagnetic wave attenuator, it is required to attenuate electromagnetic waves in a high frequency band and electromagnetic waves in a low frequency band. An electromagnetic wave attenuator WHEREIN: A thin thing is calculated|required. The thinness of the electromagnetic wave attenuator facilitates, for example, miniaturization of the electronic device. When the electromagnetic wave damping body is thin, productivity in the electromagnetic wave damping body is improved. For example, material cost can be reduced, and cost reduction can be reduced. For example, the film-forming time can be shortened.

For example, in the high frequency band of 10 MHz or more and the low frequency band of 100 kHz or more and less than 10 MHz, it is calculated|required that the characteristic with respect to an electromagnetic wave is high. Electromagnetic waves in the low frequency band are absorbed by the magnetic layer and attenuated. For this reason, for example, it is thought that the attenuation characteristic of a low frequency band can be improved by thickening the magnetic layer contained in an electromagnetic wave damping body (set it as thickness of 10 micrometers - 50 micrometers, etc.). However, in the case of this method, it is difficult to reduce the size of the electronic device.

In embodiment, the 1st member 10, the 2nd member 20, and the 3rd member 30 are provided, for example. The third member 30 attenuates, for example, electromagnetic wave noise (high frequency noise) in a high frequency band. The first member 10 and the second member 20 attenuate, for example, electromagnetic noise (low frequency noise) in a low frequency band. As a layer for attenuating low-frequency noise, two types of members are provided. Thereby, for example, the attenuation characteristic of low frequency noise can be improved.

According to the embodiment, it is possible to provide an electromagnetic wave attenuator that effectively attenuates electromagnetic waves in a high frequency band and a low frequency band. Thereby, high attenuation characteristics can be obtained, especially in a low frequency band, while maintaining a thin thickness (for example, 10 micrometers or less).

(Second embodiment)

6 to 10 are schematic diagrams illustrating a film forming apparatus according to a second embodiment.

6 is a plan view. 7 is a perspective view. FIG. 8 is a longitudinal sectional view taken along line A-A of FIG. 6 . 9 is a block diagram. 10 is a perspective view. As shown in FIG. 6 , the film forming apparatus 310 according to the embodiment includes a container 68 , a conveying unit 130 , a first film forming unit 61 , a second film forming unit 62 , and a third film forming unit. 63 , a load lock unit 60 , and a control unit 70 . In this example, the film forming apparatus 310 includes a fourth film forming unit 64 and a fifth film forming unit 65 .

The film-forming apparatus 310 is an apparatus which forms the electromagnetic wave damping body 110 on the outer surface of the package 42 of each electronic device 210 by sputtering. In the film forming apparatus 310 of the present embodiment, as shown in FIG. 7 , when the rotary table 131 rotates, the electronic device 210 on the tray Tr held by the holding unit 133 moves around the circumference. move along the trajectory of In the film forming apparatus 310 of the present embodiment, when the electronic device 210 passes through a position facing the sputtering source 104 , the particles sputtered from the target of the sputtering source 104 are transferred to the electronic device 210 . It adheres, and film-forming is performed.

The container 68 can maintain the inside of the container 68 in the state reduced in pressure higher than atmospheric pressure.

The vessel 68 is a vessel into which the sputtering gas G is introduced, as shown in FIG. 8 . The sputtering gas G is a gas for sputtering the package 42 of the electronic device 210 by making the target Tg collide with ions generated by plasma generated by the application of electric power. For example, an inert gas such as argon gas can be used as the sputtering gas G.

The inner space of the container 68 forms a vacuum chamber 121 . The vacuum chamber 121 has airtightness. The vacuum chamber 121 is a space that can be vacuumed by decompression. For example, as shown in FIGS. 7 and 8 , the vacuum chamber 121 is a circumferentially sealed space.

Vessel 68 has an vent 122 and an inlet 124 . The exhaust port 122 is an opening for ensuring the flow of gas between the vacuum chamber 121 and the outside and exhausting E. The exhaust port 122 is formed, for example, at the bottom of the container 68 . An exhaust part 123 is connected to the exhaust port 122 . The exhaust unit 123 includes piping, a pump (not shown), a valve, and the like. By the exhaust treatment by the exhaust unit 123 , the inside of the vacuum chamber 121 is decompressed.

The introduction port 124 is an opening for introducing the sputtering gas G into the vicinity of the target Tg of the vacuum chamber 121 . A gas supply unit 125 is connected to the inlet 124 . One gas supply unit 125 is provided for each target Tg. The gas supply part 125 has a gas supply source of sputtering gas G, a pump, a valve, etc. which are not shown in addition to piping. The sputtering gas G is introduced into the vacuum chamber 121 from the inlet 124 by the gas supply unit 125 .

Returning to FIG. 6 , the first to fifth film forming units 61 to 65 and the conveying unit 130 are provided in the container 68 . The control unit 70 controls the first to fifth film forming units 61 to 65 , the conveying unit 130 , and the load lock unit 60 .

The carrying unit 130 is installed in the container 68 . The transport unit 130 is a device that circulates and transports the electronic device 210 on a circumferential trajectory. The trajectory in which the electronic device 210 moves by the transport unit 130 as described above is referred to as a transport path L. The circular conveyance refers to repeatedly moving the electronic device 210 in a circumferential trajectory. The conveying unit 130 includes a rotary table 131 , a motor 132 , and a holding unit 133 .

The rotary table 131 is a circular plate. The motor 132 is a driving source that applies a driving force to the rotary table 131 to rotate the center of the circle as an axis. The holding unit 133 is a component holding the tray Tr conveyed by the conveying unit 130 . That is, the electronic device 210 is held in the holding unit 133 through the tray Tr. As shown in FIG. 10 , the plurality of electronic devices 210 are arranged and arranged at intervals on the tape T extending in the horizontal direction in the frame F, which is a frame having a substantially rectangular shape. Thereby, a film|membrane will be formed in the top surface 42a and the side surface 42b. Only the top surface of the tape T has adhesiveness, and the electronic device 210 is adhered to the top surface. In this way, a plurality of frames F on which the electronic device 210 is disposed are prepared. The frame F is arrange|positioned on the tray Tr which is a flat plate of the substantially rectangular shape with the peripheral edge part raised. However, the electronic device 210 may be held by the holding unit 133 singly. In this way, the electronic device 210 is positioned on the rotary table 131 by the holding unit 133 .

The plurality of holding parts 133 are arranged at equal intervals. For example, each holding part 133 is arrange|positioned in the direction parallel to the tangent of the circle of the circumferential direction of the rotation table 131, and is provided at equal intervals in the circumferential direction. More specifically, the holding part 133 is a groove, a hole, a protrusion, a jig, or a holder for holding the tray Tr or the electronic device 210 . The holding part 133 may be constituted by an electrostatic chuck, a mechanical chuck, or an adhesive chuck, or by a combination of these and a groove, a hole, a protrusion, a jig, a holder, or a tray. In this embodiment, six holding parts 133 are provided. For this reason, six trays Tr or the electronic device 210 are maintained on the rotary table 131 at intervals of 60°. However, the number of holding parts 133 may be one, and a plurality may be sufficient as them.

The first to fifth film forming units 61 to 65 form a non-magnetic layer (non-magnetic film) or a magnetic layer (magnetic film) on the object to be transported by the transport unit 130 .

Hereinafter, when a plurality of film-forming units (the first to fifth film-forming units 61 to 65, etc.) are not distinguished, they will be described as the film forming units PR (refer to FIG. 7 ). The film-forming unit PR includes a sputtering source 104 , a partition unit 105 , and a power supply unit 106 as shown in FIG. 8 . Hereinafter, the object to be processed will be described as the electronic device 210 in a state before the electromagnetic wave damping body 110 is formed.

The sputtering source 104 is a supply source of a film-forming material for depositing and forming a film-forming material by sputtering on the electronic device 210 . The sputter source 104 has a target Tg, a backing plate 142 and an electrode 143 . The target Tg is formed of a film-forming material that is deposited on the electronic device 210 to become a film. The target Tg is provided in the position which is spaced apart from the conveyance path L and opposes the conveyance path L. As the target Tg of this embodiment, as shown in FIG. 6, three targets (each three 1st - 5th targets 61a - 65a) are provided in each of the some film-forming part. However, the number of targets may be singular, 2, or 4 or more may be sufficient as them. Hereinafter, when the target Tg 61a, 62a, 63a, 64a, 65a is not distinguished, let it be the target Tg. The bottom surface side of the target Tg faces the electronic device 210 moved by the transfer unit 130 while being spaced apart. The target Tg has a cylindrical shape, for example. The target Tg may have an ellipsoidal columnar shape, a prismatic columnar shape, or other shapes.

The backing plate 142 is a member for holding the target Tg. The electrode 143 is a conductive member for applying electric power to the target Tg from the outside of the container 68 . The sputter source 104 may be suitably provided with a magnet, a cooling mechanism, or the like as needed.

A plurality of such sputtering sources 104 are provided on the upper cover of the container 68 in the circumferential direction, as shown in FIG. 8 . In the example of FIG. 7, FIG. 5, and FIG. 8, the five sputtering sources 104 are provided.

Hereinafter, the example of the target Tg of the 1st - 5th film-forming parts 61-65 is demonstrated.

The 1st film-forming part 61 contains the 1st target 61a. The 2nd film-forming part 62 contains the 2nd target 62a. The 1st target 61a and the 2nd target 62a contain the material used as the 1st magnetic layer 11 and the 2nd magnetic layer 21 of the 1st structure 10A, and contain a magnetic body. For example, the first target 61a and the second target 62a include Ni, Fe, Cu and Mo. In one example, the composition ratio of the 1st target 61a may be substantially the same as the composition ratio of the 2nd target 62a.

The 3rd film-forming part 63 contains the 3rd target 63a. The third target 63a contains a material used as the first nonmagnetic layer 12 and the second nonmagnetic layer 22 of the first structure 10A. The third target 63a includes, for example, a non-magnetic material. In one example, the third target 63a includes Ta.

The fourth film forming unit 64 includes a fourth target 64a. The fourth target 64a contains a material that becomes the third nonmagnetic layer 32 of the first structure 10A. The fourth target 64a includes, for example, a non-magnetic material. In one example, the fourth target 64a comprises Cu.

The 5th film-forming part 65 contains the 5th target 65a. The fifth target 65a includes, for example, a non-magnetic material. In one example, the fifth target 65a includes a material (eg, stainless steel) from which the second structure 10B and the third structure 10C are made.

The partition part 105 is a member which partitions the film-forming positions M1-M5 in which the electronic device 210 is formed into a film by the sputtering source 104. Hereinafter, when a plurality of film-forming positions M1-M5 are not distinguished, it demonstrates as the film-forming position M (refer FIG. 7). The partition part 105 has rectangular wall plates 105a and 105b, as shown in FIG. The wall plates 105a and 105b are radially arranged from the center of the circumference of the conveyance path L. As shown in FIG. The wall plates 105a and 105b are radially arranged from, for example, the rotational central axis 67 (refer to FIG. 6 ) of the rotary table 131 of the conveying unit 130 . The wall plates 105a and 105b are provided, for example, on the ceiling of the vacuum chamber 121 at a position with the target Tg interposed therebetween. The lower end of the partition 105 faces the rotary table with a gap through which the electronic device 210 passes. By having the partition portion 105 , it is possible to suppress diffusion of the sputtering gas G and the film-forming material into the vacuum chamber 121 .

The film-forming position M is a space partitioned by the partition part 105 containing the target Tg of the sputtering source 104. As shown in FIG. More specifically, as shown in FIG. 6 , the film-forming position M is the wall plates 105a and 105b of the partition part 105 and the inner surface 126 of the outer peripheral wall of the container 68 in planar view. ) and the outer surface 127 of the inner peripheral wall, it is a space surrounded by a fan shape. The horizontal range of the film-forming position M is a region partitioned by a pair of wall plates 105a and 105b.

A film-forming material is deposited as a film|membrane in the electronic device 210 which passes through the position opposing the target Tg in the film-forming position M. As shown in FIG. This film-forming position M is, for example, an area|region where most of the film-forming is performed. Even in a region deviating from the film-forming position M, there is leakage of the film-forming material from the film-forming position M. For this reason, a part of film deposition may be performed also in the area|region deviating from the film-forming position M.

The power supply unit 106 is a component that applies power to the target Tg. By applying electric power to the target Tg by the power supply unit 106 , the sputtering gas G can be turned into a plasma, and a film-forming material can be deposited on the electronic device 210 . In the present embodiment, the power supply unit 106 is, for example, a DC power supply that applies a high voltage. In the case of an apparatus for performing high-frequency sputtering, the power supply unit 106 may be an RF power supply. The rotary table 131 is at the same potential as the grounded container 68 . By applying a high voltage to the target Tg side, a potential difference is generated between the rotary table 131 and the target Tg side.

The some film-forming part PR forms the film|membrane containing the layer of several types of film-forming material by selectively depositing a film-forming material. In particular, in the present embodiment, a film including layers of a plurality of types of film-forming materials is formed by providing the sputtering source 104 corresponding to different types of film-forming materials and selectively depositing the film-forming materials. In the state in which the sputtering source 104 corresponding to the different types of film-forming materials is provided, some of the plurality of film-forming parts PR included in all the film-forming parts PR contain a common film-forming material, and the remaining other film-forming parts contain a common film-forming material. The case where the part PR is a film-forming material different from this is included. In this embodiment, a magnetic body is contained in the film-forming material common to several film-forming part PR. To selectively deposit a film-forming material one by one means that a film-forming part PR of a certain type of film-forming material does not perform film-forming, while the film-forming part PR of another film-forming material performs film-forming. The film-forming unit PR or the film-forming position under film-forming means the film-forming part PR or the film-forming position in a state in which electric power is applied to the target Tg of the film-forming unit PR and film formation can be performed on the electronic device 210 . say (M).

In this embodiment, in the conveyance direction of the conveyance path L, five film-forming parts (1st - 5th film-forming parts 61-65) are provided. Film-forming positions M1-M5 correspond to the five film-forming parts (1st - 5th film-forming parts 61-65).

At least a part of the electromagnetic wave damping body 110 described in the first embodiment is formed by such a film forming apparatus 310 . For example, at least a part of the first structure 10A is formed by the film forming apparatus 310 . The first structure 10A includes a first member 10 and a second member 20 . The first member 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 12 as already described. Between the plurality of first magnetic layers 11 is one of the plurality of first non-magnetic layers 12 . The second member 20 includes a plurality of second magnetic layers 21 and a plurality of second non-magnetic layers 22 . One of the plurality of second non-magnetic layers 22 is interposed between the plurality of second magnetic layers 21 . A thickness of one of the plurality of first magnetic layers 11 is greater than a thickness of one of the plurality of second magnetic layers 21 .

The first structure 10A formed in the film forming apparatus 310 may include the third member 30 . The third member 30 may include, for example, a plurality of third magnetic layers 31 and third non-magnetic layers 32 .

The first magnetic layer 11 and the second magnetic layer 21 are formed by at least any one of the first film forming unit 61 and the second film forming unit 62 . The first non-magnetic layer 12 and the second non-magnetic layer 22 are formed by the third film forming section 63 .

A third nonmagnetic layer 32 is formed, for example, by the fourth film forming portion 64 . The third magnetic layer 31 may be formed by at least one of the first film forming unit 61 and the second film forming unit 62 .

By the 5th film-forming part 65, the material used as the 2nd structure 10B and 3rd structure 10C is formed.

The load lock unit 60 includes an unprocessed electronic device 210 or a tray Tr on which the electronic device 210 is disposed from the outside by a conveying means (not shown) while maintaining the vacuum in the vacuum chamber 121 , It is an apparatus for carrying in the vacuum chamber 121 and carrying out the electronic device 210 or the tray Tr after processing to the outside of the vacuum chamber 121 . Since the load lock unit 60 having a well-known structure can be applied, its description is omitted.

The control unit 70 controls the operation of the above-described film forming unit. Control of motion also includes control of movement of the object to be processed.

The control unit 70 is a device that controls each part of the film forming apparatus 310 . The control unit 70 can be configured by, for example, a dedicated electronic circuit, a computer operating with a predetermined program, or the like. That is, the control unit 70 includes, for example, control related to introduction and exhaust of the sputtering gas G into the vacuum chamber 121 , control of the power supply of the sputtering source 104 , and rotation control of the rotary table 131 , etc. is programmed. Control performed by the control unit 70 is executed by a processing device such as a programmable logic controller (PLC) or a central processing unit (CPU). The control performed by the control part 70 can respond|correspond to a wide variety of film-forming specifications.

Controlled contents include, for example, the initial exhaust pressure of the film forming apparatus 310 , selection of the sputtering source 104 , electric power applied to the target Tg, flow rate and type of sputtering gas G, introduction time and exhaust time, film formation including time.

An example of the configuration of the control unit 70 for executing the operation of each unit as described above will be described with reference to FIG. 9 . 9 is, for example, a hypothetical functional block diagram. The control unit 70 includes, for example, a mechanism control unit 71 , a power supply control unit 72 , a storage unit 73 , a setting unit 74 , and an input/output control unit 75 .

The mechanism control unit 71 is a processing unit that controls controlled units such as a drive source, a valve, a switch, and a power supply. The controlled unit is, for example, included in the exhaust unit 123 , the gas supply unit 125 , the motor 132 of the transport unit 130 , and the load lock unit 60 .

The control part 70 selectively controls the film-forming part PR so that the film-forming part PR of another film-forming material does not perform film-forming, for example, while the film-forming part PR of one type of film-forming material performs film-forming.

The storage unit 73 is a configuration unit that stores information necessary for control of the present embodiment.

The setting unit 74 is a processing unit that sets information input from the outside in the storage unit 73 . The input/output control unit 75 is an interface that controls signal conversion and input/output between each unit to be controlled.

An input device 76 and an output device 77 are connected to the control unit 70 . The input device 76 is an input means for the operator to operate the film forming device 310 via the control unit 70 . The input means includes a switch, a touch panel, a keyboard, or a mouse. For example, selection of the sputtering source 104 for forming a film can be inputted by the input means.

The output device 77 is an output means which makes the information for confirming the state of an apparatus into a state which an operator can visually recognize. The output means include, for example, a display, a lamp, or a meter. For example, the output device 77 can display the film-forming position M corresponding to the sputtering source 104 which is performing film-forming, distinguishing it from the other film-forming positions M.

Hereinafter, an example of film-forming by the film-forming apparatus 310 is demonstrated. The following operations are performed under control by, for example, the control unit 70 . In the following example, the above-described first sample SPL1 is formed.

11 is a flowchart illustrating the operation of the film forming apparatus according to the second embodiment.

First, before step S105 , the electronic device 210 as a processing target is introduced into the container 68 via the load lock unit 60 .

The exhaust unit 123 evacuates the vacuum chamber 121 to create a vacuum by depressurizing the vacuum chamber 121 . The gas supply part 125 of the film-forming part PR supplies the sputtering gas G around the target Tg. The rotary table 131 rotates to reach a predetermined rotation speed. Thereby, the electronic device 210 held by the holding part 133 moves in a circular trajectory on the conveyance path L, and passes through the position opposing the sputtering source 104 .

As shown in Fig. 11, the second structure 10B is formed (step S105). For example, the stainless steel layer is formed by the fifth film forming unit 65 .

The specific operation of step S105 is as follows. The power supply unit 106 of only the fifth film forming unit 65 applies electric power to the target Tg of the fifth film forming unit 65 . Thereby, the sputtering gas G turns into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg to scatter the particles of the film-forming material. For this reason, on the surface of the electronic device 210 passing through the film-forming position M5 of the 5th film-forming part 65, the particle|grains of the film-forming material are deposited for every passage, and a film|membrane is produced|generated. Here, a stainless steel layer is formed. At this time, the electronic device 210 passes through the film-forming positions M1-M4 of the 1st - 4th film-forming parts 61-64. The electronic device 210 is heated at the film-forming position where the film-forming process is performed by the radiant heat of the plasma generated when electric power is applied to the target. Since no electric power is applied to the target Tg of the first to fourth film forming units 61 to 64, in the film forming positions M1 to M4, the film forming process is not performed and the electronic device 210 is not heated. does not Even in areas other than the film forming positions M1 to M4 , the electronic device 210 is not heated. In this unheated region, the electronic device 210 emits heat. When the film-forming time by the film-forming part PR passes, the 5th film-forming part 65 is stopped. That is, the application of the electric power to the target Tg by the power supply unit 106 is stopped.

11, the formation of the third nonmagnetic layer 32 (step S111) and the formation of the third magnetic layer 31 (step S112) are performed. At least a portion of the third non-magnetic layer 32 (eg, Cu layer) is formed in the fourth film forming unit 64 . At least a part of the third magnetic layer 31 (eg, a NiFeCuMo layer) is formed in at least one of the first film forming part 61 and the second film forming part 62 .

The specific operation of step S111 is as follows. The power supply unit 106 of the fourth film forming unit 64 applies electric power to the target Tg of the fourth film forming unit 64 . Thereby, the sputtering gas G turns into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg to scatter the particles of the film-forming material. For this reason, on the surface of the electronic device 210 which passes through the film-forming position M4 of the 4th film-forming part 64, the particle|grains of the film-forming material are deposited for every passage, and a film|membrane is produced|generated. Here, a Cu layer serving as the third nonmagnetic layer 32 is formed. At this time, the electronic device 210 passes through the film forming positions M1 to M3 and M5 of the first to third and fifth film forming units 61 to 63 and 65 . Since electric power is not applied to the target Tg of the first to third and fifth film forming units 61 to 63 and 65, the film forming process is not performed in the film forming positions M1 to 3 and M5, so that the electron Device 210 is not heated. Even in areas other than the film forming position M4 , the electronic device 210 is not heated. In this unheated region, the electronic device 210 emits heat. When the film-forming time by the 4th film-forming part 64 elapses, the 4th film-forming part 64 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

And in step S112 , the power supply unit 106 of the first film forming unit 61 applies electric power to the target Tg of the first film forming unit 61 . Thereby, in the film-forming position M1, the sputtering gas G turns into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg to scatter the particles of the film-forming material. For this reason, on the surface of the electronic device 210 passing through the film-forming position M1, the particle|grains of the film-forming material are deposited for every passage, and a film|membrane is produced|generated. Here, a NiFeCuMo layer serving as the third magnetic layer 31 is formed. At this time, the electronic device 210 passes through the film forming positions M2 to M5 of the second to fifth film forming units 62 to 65 . In the second to fifth film forming units 62 to 65 , since no electric power is applied to the target Tg, the film forming process is not performed and the electronic device 210 is not heated. Also in areas other than the film-forming position M1, the electronic device 210 is not heated. In this unheated region, the electronic device 210 emits heat.

When the film-forming time by the 1st film-forming part 61 elapses, the 1st film-forming part 61 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

Thereafter, film formation by the fourth film forming unit 64 is performed again on the formed third magnetic layer 31 to form a Cu layer serving as another third nonmagnetic layer 32 . In addition, formation of the Cu layer and formation of the NiFeCuMo layer as described above are alternately performed.

In this way, by repeating film formation by the fourth film forming unit 64 and the first film forming unit 61 , the third nonmagnetic layer 32 (Cu layer) and the third magnetic layer 31 (NiFeCuMo layer) ) is formed with a plurality of stacked third member 30 .

The number of formations n3 of any one of the third nonmagnetic layer 32 and the third magnetic layer 31 is compared with a predetermined value v3 (step S113). If the number of times n3 is smaller than the value v3, the flow returns to step S111. In the first sample SPL1, the value v3 is 10. If the number of times n3 is equal to or greater than the value v3, the flow proceeds to the following step S121. The "number of formations" can be calculated|required from the application frequency|count or application time of electric power to the target Tg, for example.

As shown in Fig. 11, the formation of the second non-magnetic layer 22 (step S121) and the formation of the second magnetic layer 21 (step S122) are performed. At least a part of the second nonmagnetic layer 22 (eg, a Ta layer) is formed in the third film forming section 63 . At least a part of the second magnetic layer 21 (eg, a NiFeCuMo layer) is formed in at least one of the first film forming part 61 and the second film forming part 62 .

The specific operation of step S121 is as follows. The power supply unit 106 of the third film forming unit 63 applies electric power to the target Tg of the third film forming unit 63 . Thereby, the sputtering gas G turns into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg to scatter the particles of the film-forming material. For this reason, on the surface of the electronic device 210 passing through the film-forming position M3 of the 3rd film-forming part 63, the particle|grains of the film-forming material are deposited for every passage, and a film|membrane is produced|generated. Here, a Ta layer serving as the second non-magnetic layer 22 is formed. At this time, the electronic device 210 passes through the film forming positions M1 , M2 , M4 and M5 of the first, second, fourth and fifth film forming units 61 , 62 , 64 and 65 . Since electric power is not applied to the target Tg in these film-forming units, the film-forming process is not performed and the electronic device 210 is not heated. Also in areas other than the film-forming position M3, the electronic device 210 is not heated. In this unheated region, the electronic device 210 emits heat.

When the film-forming time by the 3rd film-forming part 63 elapses, the 3rd film-forming part 63 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

And the power supply part 106 of at least any one of the 1st film-forming part 61 and the 2nd film-forming part 62 applies electric power to the target Tg. Hereinafter, the case where electric power is applied in the 1st film-forming part 61 is illustrated. Thereby, in the film-forming position M1, the sputtering gas G turns into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg to scatter the particles of the film-forming material. For this reason, on the surface of the electronic device 210 passing through the film-forming position M1 of the 1st film-forming part 61, the particle|grains of the film-forming material are deposited for every passage, and a film|membrane is produced|generated. Here, a NiFeCuMo layer serving as the second magnetic layer 21 is formed. At this time, the electronic device 210 passes through the film forming positions M2 to M5 of the second to fifth film forming units 62 to 65 . In the second to fifth film forming units 62 to 65 , since no electric power is applied to the target Tg, the film forming process is not performed and the electronic device 210 is not heated. Also in areas other than the film-forming position M1, the electronic device 210 is not heated. In this unheated region, the electronic device 210 emits heat.

When the film-forming time by the 1st film-forming part 61 elapses, the 1st film-forming part 61 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

After that, film formation is performed again by the third film forming unit 63 on the second magnetic layer 21 formed into a film to form a Ta layer serving as another second nonmagnetic layer 22 . Further, as described above, the formation of the Ta layer and the formation of the NiFeCuMo layer are alternately performed.

In this way, by repeating film formation by the third film forming unit 63 and the first film forming unit 61, a plurality of the second nonmagnetic layer 22 (Ta layer) and the second magnetic layer 21 (NiFeCuMo layer) are laminated. The second member 20 is formed.

The number of formations n2 of any one of the second nonmagnetic layer 22 and the second magnetic layer 21 is compared with a predetermined value v2 (step S123). If the number of times n2 is smaller than the value v2, the flow returns to step S121. In the first sample SPL1, the value v2 is 40. If the number of times n2 is equal to or greater than the value v2, the flow proceeds to the following step S131.

As shown in Fig. 11, the formation of the first non-magnetic layer 12 (step S131) and the formation of the first magnetic layer 11 (step S132) are performed. At least a portion of the first non-magnetic layer 12 (eg, a Ta layer) is formed in the third film forming portion 63 . At least a part of the first magnetic layer 11 (eg, a NiFeCuMo layer) is formed in at least one of the first film forming part 61 and the second film forming part 62 .

Since the specific operations of steps S131 and S132 are the same as those of steps S121 and S122, their description is omitted. By repeating the film formation by the third film forming unit 63 and the film forming by the first film forming unit 61 , the first nonmagnetic layer 12 (Ta layer) and the first magnetic layer 11 (NiFeCuMo layer) are formed in large numbers. A stacked first structure 10A is formed. The number of formations n1 of any one of the first non-magnetic layer 12 and the first magnetic layer 11 is compared with a predetermined value v1 (step S133). If the number of times n1 is smaller than the value v1, the flow returns to step S131. In the first sample SPL1 , the value v1 is 7. If the number of times n1 is equal to or greater than the value v1, the flow proceeds to the following step S141.

As shown in Fig. 11, the formation of the third structure 10C (step S141) is performed. For example, a stainless steel layer is formed by the fifth film forming unit 65 . The specific operation of step S141 is the same as that of step S105.

As described above, in the film forming apparatus 310 according to the embodiment, the number of film forming units (the first film forming unit 61 and the second film forming unit 62 ) for forming the magnetic layer is a non-magnetic layer laminated on the magnetic layer. It is larger than the number of film-forming parts (third film-forming part 63) for forming.

In the formation of these magnetic layers and non-magnetic layers, their thicknesses are appropriately controlled. As described above, the thickness of one of the plurality of first magnetic layers 11 (first magnetic layer thickness t11) is greater than the thickness of one of the plurality of second magnetic layers 21 (second magnetic layer thickness t21). thick. When forming two types of magnetic layers with different thicknesses, the control unit 70 performs, for example, the following control.

After forming a part of one of the plurality of first magnetic layers 11 in the first film forming unit 61 , the control unit 70 forms one of the plurality of first magnetic layers 11 in the second film forming unit 62 . form another part of Alternatively, the control unit 70 forms one of the plurality of first magnetic layers 11 in the first film forming unit 61 , and forms the other one of the plurality of first magnetic layers 11 in the second film forming unit 62 . to form

The control unit 70 forms the plurality of first non-magnetic layers 12 in the third film forming unit 63 .

As described above, when forming the thick first magnetic layer 11 , a part of one first magnetic layer 11 is formed in the first film forming unit 61 , and the remainder is formed in the second film forming unit 62 . may do That is, when forming one first magnetic layer 11 , electric power is applied to the target Tg of the first film forming unit 61 and the second film forming unit 62 , and the electronic device 210 is positioned at the film forming position. (M1 and M2) are passed through. As a result, one first magnetic layer 11 is formed by the first film forming unit 61 and the second film forming unit 62 .

Alternatively, a part of the plurality of first magnetic layers 11 may be formed in the first film forming unit 61 , and the remainder of the plurality of first magnetic layers 11 may be formed in the second film forming unit 62 . That is, when forming one first magnetic layer 11 , electric power is applied to the target Tg (first target 61a ) of the first film forming unit 61 , and the film forming position is placed on the electronic device 210 . (M1) is passed. When the formation of one first magnetic layer 11 is finished and the other first magnetic layer 11 is formed, the application of electric power to the target Tg (the second target 62a) of the second film forming unit 62 is performed. Thus, the film forming position M2 is passed through the electronic device 210 . Thereby, the plurality of first magnetic layers 11 are formed by any one of the first film forming unit 61 and the second film forming unit 62 .

In this case, the control unit 70 forms one of the plurality of second magnetic layers 21 in one of the first film forming unit 61 and the second film forming unit 62 . The other one of the plurality of second magnetic layers 21 is formed in the other of the first film-forming part 61 and the second film-forming part 62 . A plurality of second non-magnetic layers 22 are formed in the third film forming portion 63 .

In this way, when the first magnetic layer 11 and the second magnetic layer 21 having different thicknesses are formed, the operations of the first film forming unit 61 and the second film forming unit 62 may be changed. Thereby, in the 1st target 61a and the 2nd target 62a, for example, it becomes easy to make the consumption amount of a target uniform. As a result, the lifespan of each target can be lengthened, and the maintenance frequency for target exchange can be reduced. Further, for example, it is easy to obtain the first magnetic layer 11 and the second magnetic layer 21 having more uniform characteristics. As described above, it is possible to manufacture an electromagnetic wave attenuator and an electronic device capable of improving electromagnetic wave attenuation characteristics with higher productivity.

Since heat can be released even during film formation, low-temperature sputtering becomes possible, and as the second magnetic layer 21, a layer with low crystallinity in which crystals are difficult to grow can be formed. The first magnetic layer 11 is thicker than the second magnetic layer 21 . For this reason, compared with the film-forming time of the 2nd magnetic layer 21, the film-forming time of the 1st magnetic layer 11 is long. The heating time of the first magnetic layer 11 is longer than the heating time of the second magnetic layer 21 . In the first magnetic layer 11, crystals tend to grow. For this reason, as described above in the first embodiment, the crystallinity of the first magnetic layer 11 can be higher than that of the second magnetic layer 21 .

(Third embodiment)

A third embodiment relates to a film forming method. The film-forming method performs the process illustrated in FIG. In the film-forming method according to the embodiment, when the above-described first structure 10A is formed, processing is performed by the following steps. After forming a part of one of the plurality of first magnetic layers 11 in the first film forming unit 61 , the second film forming unit 62 forms another part of the one of the plurality of first magnetic layers 11 . . Alternatively, one of the plurality of first magnetic layers 11 is formed in the first film forming unit 61 , and the other one of the plurality of first magnetic layers 11 is formed in the second film forming unit 62 . A plurality of first non-magnetic layers 12 are formed in the third film forming section 63 . Thereby, in the 1st target 61a and the 2nd target 62a, it becomes easy to make the consumption amount of a target uniform. Further, for example, it is easy to obtain the first magnetic layer 11 and the second magnetic layer 21 having more uniform characteristics. With higher productivity, it is possible to manufacture an electromagnetic wave attenuator and an electronic device capable of improving electromagnetic wave attenuation characteristics.

In the embodiment, for example, when forming the second magnetic layer 21 or the third magnetic layer 31 , a part of the plurality of first magnetic layers 11 is formed in the first film forming unit 61 , and the plurality of first magnetic layers 11 are formed. The remainder of the magnetic layer 11 may be formed in the second film forming unit 62 . That is, you may make it apply the electric power to the target Tg of the 1st film-forming part 61 and the 2nd film-forming part 62, and make the film-forming positions M1 and M2 pass through the electronic device 210. Since the target of the magnetic material is a non-sputtering material and has a low film-forming rate, it becomes possible to increase the film-forming rate by moving the plurality of film-forming units.

According to the embodiment, it is possible to provide an electromagnetic wave damping body, an electronic device, a film forming apparatus, and a film forming method capable of improving electromagnetic wave attenuation characteristics.

As mentioned above, embodiment of this invention was demonstrated, referring a specific example. However, the present invention is not limited to these specific examples. For example, for specific configurations of elements such as electromagnetic wave attenuators or members included in electronic devices, magnetic layers, non-magnetic layers and electronic elements, those skilled in the art can appropriately implement the present invention by selecting them from known ranges to achieve the same effect. As long as it can be obtained, it is included in the scope of the present invention.

In addition, combinations of any two or more elements of each embodiment within the technically possible range are also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, based on the electromagnetic wave attenuator, electronic device, film forming apparatus and film forming method described above as an embodiment of the present invention, all electromagnetic wave attenuators, electronic devices, film forming apparatuses and The film-forming method also falls within the scope of the present invention as long as the gist of the present invention is included.

In addition, within the scope of the spirit of the present invention, it is understood that those skilled in the art can imagine various modifications and modifications, and these modifications and modifications also fall within the scope of the present invention.

Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in other various forms, and various abbreviations, substitutions, and changes can be made in the range which does not deviate from the summary of invention. These embodiments and their modifications are included in the scope and gist of the invention, and the invention described in the claims and their equivalents.

10: 1st member 10A-10C: 1st - 3rd structure
11: first magnetic layer 11g: first crystal grains
11gs: length 12: first non-magnetic layer
20: second member 21: second magnetic layer
22: second non-magnetic layer 30: third member
31: third magnetic layer 32: third non-magnetic layer
38: conductive member 42: package
42a: top surface 42b: side
43: electrode 44: substrate
51: electronic element 55: gas
60: load lock unit 61 to 65: first to fifth film forming units
61a~65a: first to fifth target 67: rotational central axis
68: container 70: control unit
71: instrument control unit 72: power control unit
73: storage unit 74: setting unit
75: input/output control unit 76: input device
77: output device 104: sputter one
105: partition part 105a, 105b: wall plate
106: power supply 110: electromagnetic wave attenuator
121: vacuum chamber 122: exhaust port
123: exhaust 124: inlet
125: gas supply 126: inner
127: outer surface 130: conveyance unit
131: rotary table 132: motor
133: holding part 142: backing plate
143: electrode 210: electronic device
310: film forming device E: exhaust
F: frame G: sputter gas
L: transport path M, M1-M5: film-forming position
PR: film forming part Pa1: parameter
SPL1: first sample SPL3 to SPL5: third to fifth sample
T: Tape Te: Thickness
Tg: target Tr: tray
f1 : frequency n1 to n3 : frequency
t10: thickness of the first member t11: thickness of the first magnetic layer
t12: thickness of the first non-magnetic layer t20: thickness of the second member
t21: thickness of the second magnetic layer t22: thickness of the second non-magnetic layer
t30: thickness of third member t31: thickness of third magnetic layer
t32: thickness of the third non-magnetic layer tA-tC: thickness of the first to third structures
v1~v3 : value

Claims (18)

A first member including first magnetic layers and conductive first non-magnetic layers alternately provided in a first direction, which is a lamination direction;
a second member including a second magnetic layer and a second conductive non-magnetic layer alternately provided in the first direction;
A third member including a conductive third non-magnetic layer
Having a first structure comprising:
A direction from the third member to the first member is along the first direction,
a direction from the third member to the second member is along the first direction;
The thickness of the first magnetic layer that is the thickness of the first magnetic layer along the first direction is thicker than the thickness of the second magnetic layer that is the thickness of the second magnetic layer along the first direction. The electromagnetic wave attenuator according to claim 1, wherein the crystallinity of at least a portion of the first magnetic layer is higher than that of at least a portion of the second magnetic layer. A first member including first magnetic layers and conductive first non-magnetic layers alternately provided in a first direction, which is a lamination direction;
a second member including a second magnetic layer and a second conductive non-magnetic layer alternately provided in the first direction;
A third member including a conductive third non-magnetic layer
Having a first structure comprising:
A direction from the third member to the first member is along the first direction,
a direction from the third member to the second member is along the first direction;
The electromagnetic wave damping body, wherein the crystallinity of at least a portion of the first magnetic layer is higher than that of at least a portion of the second magnetic layer. The electromagnetic wave attenuator according to claim 2 or 3, wherein the at least part of the first magnetic layer is a crystal, and the at least part of the second magnetic layer is amorphous. The method according to claim 1 or 3, wherein the first magnetic layer has a thickness of 80 nm or more and 400 nm or less,
The thickness of the second magnetic layer is an electromagnetic wave attenuator that is 10 nm or more and less than 80 nm. The method of claim 5, wherein the first non-magnetic layer has a thickness of 10 nm or less,
The second non-magnetic layer has a thickness of 10 nm or less. The electromagnetic wave attenuator of claim 1 or 3, wherein at least one of the first non-magnetic layer and the second non-magnetic layer includes at least one selected from the group consisting of Ta, Cr, and Ti. The electromagnetic wave attenuator of claim 1 or 3, wherein at least one of the first magnetic layer and the second magnetic layer includes Ni, Fe, Cu and Mo. The composition ratio of Ni in the first magnetic layer according to claim 8, wherein the composition ratio of Ni in the second magnetic layer is 0.9 times or more and 1.1 times or less,
The composition ratio of Fe in the first magnetic layer is 0.9 times or more and 1.1 times or less of the composition ratio of Fe in the second magnetic layer. The electromagnetic wave attenuator according to claim 1 or 3, wherein the composition of the first magnetic layer is substantially the same as that of the second magnetic layer. The electromagnetic wave attenuator according to claim 1 or 3, wherein the third non-magnetic layer includes Cu. According to claim 1 or 3, wherein the third member further comprises a third magnetic layer,
A direction from the third magnetic layer to the third non-magnetic layer is along the first direction. According to claim 1 or 3, further comprising a second structure,
The direction from the second structure to the first structure is along the first direction,
The second structure, at least one of Cr and Ni, and an electromagnetic wave attenuator comprising Fe. 14. The method of claim 13, further comprising a third structure,
In the first direction, the first structure is between the second structure and the third structure,
The third structure is an electromagnetic wave attenuator comprising at least one of Cr and Ni, and Fe. The electromagnetic wave attenuator according to claim 1 or 3;
electronic device
An electronic device comprising a. A container capable of maintaining an atmosphere lowered than atmospheric pressure, and
a first film forming unit, a second film forming unit, and a third film forming unit installed in the container and having a sputter source for depositing a film forming material on a target object by sputtering to form an electromagnetic wave damping body;
A control unit for controlling the first film forming unit, the second film forming unit, and the third film forming unit
to provide
The electromagnetic wave attenuator has a first structure,
The first structure,
a first member comprising a plurality of first magnetic layers and a plurality of first non-magnetic layers, the first member having one of the plurality of first non-magnetic layers between the plurality of first magnetic layers;
A second member comprising a plurality of second magnetic layers and a plurality of second nonmagnetic layers, wherein one of the plurality of second nonmagnetic layers is interposed between the plurality of second magnetic layers.
Including, the thickness of one of the plurality of first magnetic layers, when forming the first structure thicker than the thickness of one of the plurality of second magnetic layers, the control unit,
After forming a part of the one of the plurality of first magnetic layers in the first film forming portion, another part of the one of the plurality of first magnetic layers is formed in the second film forming portion, or the first film forming portion to form one of the plurality of first magnetic layers, and to form the other one of the plurality of first magnetic layers in the second film forming part,
and forming the plurality of first non-magnetic layers in the third film forming portion. The apparatus according to claim 16, further comprising: a conveying unit installed in the container and circulating and conveying the object to be processed on a circumferential trajectory;
A partition part for partitioning a film-forming position in which the to-be-processed object is formed into a film by the said sputtering source of the said 1st film-forming part, the said 2nd film-forming part, and the said 3rd film-forming part.
provide more,
The control unit passes a film-forming position for forming a film of the one type of film-forming material on the object while depositing the one type of film-forming material on the object, and forming a film of the one type of film-forming material on the object. The film-forming apparatus is made to pass through the area|region occupied by the area|region other than the film-forming position to be performed, and to reach the film-forming position which performs film-forming of the said one type of film-forming material again on the said target object. a first member comprising a plurality of first magnetic layers and a plurality of first non-magnetic layers, wherein one of the plurality of first non-magnetic layers is between the plurality of first magnetic layers; A first structure comprising a second member comprising a magnetic layer and a plurality of second nonmagnetic layers, wherein one of the plurality of second nonmagnetic layers is between the plurality of second magnetic layers, the second member comprising the plurality of second magnetic layers. When the thickness of one of the first magnetic layers of forming the first structure is thicker than the thickness of one of the plurality of second magnetic layers,
After forming a part of the one of the plurality of first magnetic layers in the first film forming part, another part of the one of the plurality of first magnetic layers is formed in the second film forming part, or the plurality of the plurality of the first magnetic layers are formed in the first film forming part forming one of the first magnetic layers of, and forming the other one of the plurality of first magnetic layers in the second film forming part,
forming the plurality of first non-magnetic layers in a third film forming part;
forming one of the plurality of second magnetic layers as one of the first film-forming unit and the second film-forming unit;
and forming the plurality of second non-magnetic layers in the third film forming unit.

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