KR20210086108A - Organic light emitting display device - Google Patents

Abstract

An organic light emitting display device according to one embodiment of the present invention includes: an organic film covering a circuit element layer; a first electrode of the organic light emitting diode connected to the circuit element layer through the organic film; an auxiliary electrode spaced apart from the first electrode on the same layer; a bank layer disposed on the first electrode; a spacer disposed on the auxiliary electrode; and an organic light emitting layer disposed on the bank layer and the spacer, wherein a separation region, in which the organic layer, the bank layer, and the spacer are spaced apart from each other so as to be discontinuously disposed, and a blocking region, which blocks a movement path of ion gas to the auxiliary electrode disposed between the spacer and the organic layer and the first electrode disposed between the bank layer and the organic layer, are disposed between the organic layer, the first electrode, the auxiliary electrode, and the spacer.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

The present invention relates to an organic light emitting display device.

Recently, various display devices capable of reducing weight and volume, which are disadvantages of a cathode ray tube, have been developed. Such display devices include a liquid crystal display (LCD), a plasma display panel (PDP), a field emission display (FED), an organic light emitting display device, etc. There is this.

The organic light emitting display device is a self-luminous device that emits light by itself, and has advantages of fast response speed, luminous efficiency, luminance and viewing angle. In addition, since the device can be formed on a flexible substrate such as plastic, a flexible display device can be realized.

Recently, as a large-area, high-resolution organic light emitting display device is required, a plurality of sub-pixels are included in a single panel. In general, a mask is used to pattern the light emitting layer of the red (R), green (G), and blue (B) subpixels. In order to realize a high-resolution display device, a high-resolution fine metal mask (FMM) corresponding to a substrate having a fine pattern is required.

However, as a high-resolution fine metal mask is used, various defects such as an organic light emitting material constituting the light emitting layer not being deposited at a desired location or a foreign material being generated during the deposition process are caused. In particular, despite the fact that defects are caused by foreign substances generated during the deposition process, only attempts to reduce the occurrence of foreign substances are being made.

Accordingly, there is a need to develop a structure capable of fundamentally preventing display defects of the organic light emitting display device due to foreign matter even when a foreign material defect occurs.

The problem to be solved by the present invention is to suppress the occurrence of black spots and white spots by blocking the path of ion gas penetrating into the organic light emitting layer through the organic light emitting layer and the organic layer having a structure that can secure the reliability of the light emitting characteristics of the organic light emitting layer. To provide a light emitting display device.

The problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

In an organic light emitting display device according to an embodiment of the present invention, an organic layer covering a circuit element layer is disposed on the organic layer, and a first electrode of an organic light emitting diode connected to the circuit element layer, the same as the first electrode an auxiliary electrode disposed on the first electrode and spaced apart from the first electrode, a bank layer disposed on the first electrode, a spacer disposed on the auxiliary electrode, and an organic light emitting layer disposed on the bank layer and the spacer. and between the organic layer, the first electrode, the auxiliary electrode, and the spacer, a blocking region for blocking a movement path of the ion gas between the auxiliary electrode and the first electrode is disposed, and between the first electrode and the auxiliary electrode A separation region separating the bank layer and the spacer from each other and separating the spacer from the organic layer is disposed.

The separation region may be spaced apart from each other so that the organic layer disposed under the first electrode and the auxiliary electrode and the bank layer disposed on the first electrode and the auxiliary electrode are not disposed in contact with each other.

In the first electrode, an extension formed extending from the first electrode may be further disposed such that the bank layer is not disposed in contact with the organic layer disposed under the first electrode.

A width of the auxiliary electrode disposed on the blocking region may be wider than a width of the spacer.

The organic layer may include an overcoat layer.

On the separation region, spaced apart from the bank layer adjacent to the spacer,

A part of the auxiliary electrode, the extension of the first electrode, and the organic layer may be exposed.

The organic light emitting diode includes an organic light emitting layer disposed on the first electrode and a second electrode disposed on the organic light emitting layer, wherein the organic light emitting layer is a foreign material disposed on at least one of the spacer and the bank layer and residues may be further disposed.

An exposed region exposing a cross section of the organic light emitting layer may be further disposed on the spacer or the bank layer.

The blocking region and the separation region may block a movement path of the ion gas moving from the organic layer to the exposed region through the spacer and the bank layer.

The exposed region may be disposed on the spacer or the bank layer along a cross-section of the foreign material.

The organic light emitting diode includes a first organic light emitting layer disposed in the first opening exposed to the bank layer, a second organic light emitting layer disposed in the second opening exposed to the bank layer, and a third opening exposed to the bank layer. It may include a third organic light emitting layer disposed.

At least one of the first organic light emitting layer to the third organic light emitting layer may include a light emitting layer formed of a phosphorescent material.

A contact portion formed through the organic layer may be disposed on the organic layer disposed between the circuit element layer and the organic light emitting diode.

The auxiliary electrode may be formed in at least one of a rectangular shape, a circular shape, and a polygonal shape.

The separation region may be spaced apart from each other so that the organic layer and the bank layer, the organic layer and the spacer, and the spacer and the bank layer are discontinuously disposed from each other, and may block a movement path of the ion gas.

In the blocking region, the auxiliary electrode disposed between the spacer and the organic layer and the first electrode disposed between the bank layer and the organic layer may block a movement path of the ion gas.

A second separation region from which the bank layer is removed may be further disposed on the organic layer, and an extension portion exposing a portion of the first electrode may be disposed along an edge region of the first electrode in the second separation region.

The details of other embodiments are included in the detailed description and drawings.

According to the embodiments of the present invention, there are at least the following effects.

According to embodiments of the present invention, by forming a blocking region through the electrode and the separation region from which the organic film is removed, it is possible to block the movement path of the ion gas penetrating into the organic light emitting layer.

In addition, according to the embodiment of the present invention, there is an effect that can secure the reliability of the organic light emitting layer by suppressing the generation of black spots and white spots by blocking the movement path of the ion gas.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic block diagram of an organic light emitting diode display;
Fig. 2 is a schematic circuit diagram of a sub-pixel;
3 is a detailed circuit diagram of a sub-pixel;
4 is a plan view schematically illustrating a pixel of an organic light emitting diode display according to a first exemplary embodiment of the present invention;
5 is an enlarged plan view of part Q of FIG. 4;
Fig. 6 is a cross-sectional view taken along line I-I' of Fig. 5;
7 is a schematic cross-sectional view of an organic light emitting diode display according to a comparative example of the present invention.
8 is an enlarged cross-sectional view of area A of FIG. 7 ;
9 is a cross-sectional view illustrating a region B of FIG. 7 ;
10 is a cross-sectional view illustrating movement of ion gas in the organic light emitting diode display according to the first exemplary embodiment of the present invention.
11 is a plan view of an organic light emitting display device according to a second exemplary embodiment of the present invention.
12 is a cross-sectional view taken along II-II' of FIG. 11;
13 is a plan view illustrating an auxiliary electrode of an organic light emitting diode display according to a third exemplary embodiment of the present invention;

Advantages and features of the present specification and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present specification to be complete, and common knowledge in the technical field to which this specification belongs It is provided to fully inform those who have the scope of the specification, and this specification is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present specification are exemplary and are not limited to the matters shown in the present specification. Like reference numerals refer to like elements throughout. In addition, in the description of the present specification, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present specification, the detailed description thereof will be omitted. When 'including', 'having', 'consisting of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'next to', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

The first, second, etc. may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present specification.

Each feature of the various embodiments of the present specification may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, an electroluminescent display device according to an embodiment of the present specification will be described with reference to the accompanying drawings. Like reference numerals refer to substantially identical elements throughout. In the following description, when it is determined that a detailed description of a known function or configuration related to the present specification may unnecessarily obscure the gist of the present specification, the detailed description will be omitted or briefly described.

As the display device according to the present invention, an organic light emitting display device, a liquid crystal display device, an electrophoretic display device, etc. can be used as examples of the display device. In the present invention, the organic light emitting display device will be described as an example. The organic light emitting display device includes an organic light emitting layer made of an organic material between a first electrode that is an anode and a second electrode that is a cathode. Therefore, the holes supplied from the first electrode and the electrons supplied from the second electrode combine in the organic light emitting layer to form an exciton, a hole-electron pair, and emit light by the energy generated when the exciton returns to the ground state. It is a self-luminous display device.

1 is a schematic block diagram of an organic light emitting diode display, FIG. 2 is a schematic circuit diagram of a sub-pixel, and FIG. 3 is a detailed circuit diagram of a sub-pixel.

1 , the organic light emitting diode display 10 includes an image processor 11 , a timing controller 12 , a data driver 13 , a scan driver 14 , and a display panel 20 .

The image processing unit 11 outputs a data enable signal DE along with the data signal DATA supplied from the outside. The image processing unit 11 may output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal in addition to the data enable signal DE, but these signals are omitted for convenience of description.

The timing controller 12 receives the data signal DATA from the image processing unit 11 as well as a driving signal including a data enable signal DE or a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 12 includes a gate timing control signal GDC for controlling the operation timing of the scan driver 14 and a data timing control signal DDC for controlling the operation timing of the data driver 13 based on the driving signal. to output

The data driver 13 samples and latches the data signal DATA supplied from the timing controller 12 in response to the data timing control signal DDC supplied from the timing controller 12 , and converts it into a gamma reference voltage and outputs it. . The data driver 13 outputs the data signal DATA through the data lines DL1 to DLn. The data driver 13 may be formed in the form of an integrated circuit (IC).

The scan driver 14 outputs a scan signal in response to the gate timing control signal GDC supplied from the timing controller 12 . The scan driver 14 outputs a scan signal through the gate lines GL1 to GLm. The scan driver 14 is formed in the form of an integrated circuit (IC) or is formed in the display panel 20 in the form of a gate in panel (GIP).

The display panel 20 displays an image in response to the data signal DATA and the scan signal supplied from the data driver 13 and the scan driver 14 . The display panel 20 includes sub-pixels 50 that operate to display an image.

Subpixels 50 include red subpixels, green subpixels and blue subpixels or include white subpixels, red subpixels, green subpixels and blue subpixels. The sub-pixels 50 may have one or more different emission areas according to emission characteristics.

As shown in FIG. 2 , one subpixel includes a switching transistor 30 , a driving transistor 35 , a capacitor 45 , a compensation circuit 45 , and an organic light emitting diode 60 .

The switching transistor 30 performs a switching operation such that the data signal supplied through the first data line 36 is stored as a data voltage in the capacitor 45 in response to the scan signal supplied through the first gate line 32 . . The driving transistor 35 operates so that a driving current flows between the power supply line 42 (high potential voltage) and the cathode power supply line 44 (low potential voltage) according to the data voltage stored in the capacitor 45 . The organic light emitting diode 60 operates to emit light according to a driving current formed by the driving transistor 35 .

The compensation circuit 45 is a circuit added in the sub-pixel to compensate the threshold voltage of the driving transistor 35 . The compensation circuit 45 is composed of one or more transistors. The configuration of the compensation circuit 45 is very diverse according to an external compensation method, and an example thereof will be described as follows.

As shown in FIG. 3 , the compensation circuit 45 includes a sensing transistor 65 and a sensing line 70 (or a reference line). The sensing transistor 65 is connected between the source electrode of the driving transistor 35 and the anode electrode of the organic light emitting diode 60 (hereinafter, referred to as a sensing node). The sensing transistor 65 supplies an initialization voltage (or sensing voltage) transmitted through the sensing line 70 to a sensing node of the driving transistor 35 or a sensing node of the driving transistor 35 or a voltage of the sensing line 70 . Alternatively, it operates to sense current.

The switching transistor 30 has a first electrode connected to the first data line 36 and a second electrode connected to a gate electrode of the driving transistor 35 . The driving transistor 35 has a first electrode connected to the power line 42 and a second electrode connected to the anode electrode of the organic light emitting diode 60 . The capacitor 45 has a first electrode connected to the gate electrode of the driving transistor 35 and a second electrode connected to the anode electrode of the organic light emitting diode 60 . The organic light emitting diode 60 has an anode electrode connected to the second electrode of the driving transistor 35 and a cathode electrode connected to the second power line 44 . In the sensing transistor 65 , a first electrode is connected to the sensing line 70 , and a second electrode is connected to the anode electrode of the organic light emitting diode 60 , which is a sensing node, and the second electrode of the driving transistor 35 .

The operating time of the sensing transistor 65 may be similar/same as or different from that of the switching transistor 30 according to an external compensation algorithm (or configuration of a compensation circuit). For example, the switching transistor 30 may have a gate electrode connected to the first gate line 32 , and the sensing transistor 65 may have a gate electrode connected to the second gate line 34 . In this case, the scan signal Scan is transmitted to the first gate line 32 and the sensing signal Sense is transmitted to the second gate line 34 . As another example, the first gate line 32 connected to the gate electrode of the switching transistor 30 and the second gate line 34 connected to the gate electrode of the sensing transistor 65 may be connected in common.

The sensing line 70 may be connected to the data driver. In this case, the data driver may sense the sensing node of the subpixel and generate a sensing result in real time, during the non-display period of the image, or during N frames (N is an integer greater than or equal to 1). Meanwhile, the switching transistor 30 and the sensing transistor 65 may be turned on at the same time. In this case, the sensing operation through the sensing line 70 and the data output operation of outputting the data signal are separated (separated) from each other based on the time division method of the data driver.

In addition, a compensation target according to the sensing result may be a digital data signal, an analog data signal, or gamma. In addition, the compensation circuit for generating a compensation signal (or compensation voltage) based on the sensing result may be implemented as an inside of a data driver, an inside of a timing controller, or a separate circuit.

The light blocking layer 80 may be disposed only under the channel region of the driving transistor DR or may be disposed not only under the channel region of the driving transistor 35 , but also under the channel region of the switching transistor 30 and the sensing transistor 65 . The light blocking layer 80 may be used for the purpose of simply blocking external light, or the light blocking layer 80 may be connected to other electrodes or lines and used as an electrode constituting a capacitor or the like. Therefore, the light blocking layer 80 is selected as a metal layer of multiple layers (multilayers of different metals) to have light blocking properties.

In addition, in FIG. 3 , a sub-pixel having a 3T (Transistor) 1C (Capacitor) structure including a switching transistor 30 , a driving transistor 35 , a capacitor 45 , an organic light emitting diode 60 , and a sensing transistor 65 is illustrated. Although described as an example, when the compensation circuit 45 is added, it may be configured as 3T2C, 4T2C, 5T1C, 6T2C, or the like.

4 is a plan view schematically illustrating a pixel of an organic light emitting diode display according to a first embodiment of the present invention, FIG. 5 is an enlarged plan view of part Q of FIG. 4 , and FIG. 6 is a line taken along line I-I' of FIG. 5 . is a cross-sectional view.

Referring to FIG. 4 , a display area including a plurality of sub-pixels SP is disposed in the pixel P of the organic light emitting diode display 100 according to the first embodiment of the present invention. On the display area, the first organic light emitting layer 182 disposed on the first subpixel SP1, the second organic light emitting layer 184 disposed on the second subpixel SP2, and the third subpixel SP3 are disposed on the display area. A third organic light emitting layer 186 is formed.

The first organic light-emitting layer 182 disposed on the first sub-pixel SP1 may be a red sub-pixel, and the second organic light-emitting layer 184 disposed on the second sub-pixel SP2 may be a green sub-pixel, The third organic light emitting layer 186 disposed on the third subpixel SP3 may be a blue subpixel. However, the arrangement of each sub-pixel SP may be changed from each other. Here, the structure of the sub-pixel SP is illustrated as shown in the drawings for easy explanation, but the sub-pixel SP may be disposed in various structures.

In each subpixel SP, each organic light emitting layer 180 is disposed on an opening exposing the first electrode 170 by removing the bank layer 1000 to emit light of each color. Here, the openings in which the organic light emitting layers 182 , 184 , and 186 are disposed are respectively matched to be referred to as a first opening OP1 , a second opening OP2 , and a third opening OP3 .

The organic light emitting diode display 100 according to the first embodiment of the present invention may include a separation area DTA disposed at a separation distance from the bank layer 1000 around the spacer 2000 . The separation area DTA may be formed by removing the bank layer 1000 to expose a portion of the auxiliary electrode 175 disposed under the bank layer 1000 and the overcoat layer 140 .

Referring to FIGS. 5 and 6 , a cross-sectional structure of the first sub-pixel SP1 as an example of the first to third sub-pixels SP1-SP3 is as follows.

5 and 6 , in the organic light emitting display device 100 according to the first embodiment of the present invention, an organic layer covering the circuit element layer 120 is disposed on the organic layer, and the circuit element layer ( The first electrode 170 of the organic light emitting diode 60 connected to 120 and the first electrode 170 are disposed on the same layer, and the auxiliary electrode 175 and the first electrode are spaced apart from the first electrode 170 . a bank layer 1000 disposed on 170, a spacer 200 disposed on the auxiliary electrode 175, and an organic light emitting layer 1800 disposed on the bank layer 1000 and the spacer 2000; Between the organic layer, the first electrode 170 , the auxiliary electrode 175 , and the spacer 2000 , the auxiliary electrode 175 and the first electrode 170 are a blocking region CA that blocks the movement path of the ion gas. is disposed between the first electrode 170 and the auxiliary electrode 175 to separate the bank layer 1000 and the spacer 2000, and a separation region DTA is disposed to separate the bank layer 1000 and the spacer 2000 from the organic layer. Here, the organic layer may include an overcoat layer 140 .

It includes a circuit element layer 120 and an organic light emitting diode 60 disposed on the circuit element layer 120 . And the circuit element layer 120 includes a thin film transistor (205). A passivation layer 130 and an overcoat layer 140 are disposed on the circuit element layer 120 and the organic light emitting diode 60 . Thus, the circuit element layer 120 and the organic light emitting diode 60 may be connected through the contact portion 165 formed by penetrating the passivation layer 130 and the overcoat layer 140 .

A light blocking layer 210 is disposed on the substrate 110 on the thin film transistor 205 . The light-blocking layer 210 blocks external light from being incident to prevent photocurrent from being generated in the transistor. The buffer layer 220 is positioned on the light blocking layer 210 . The buffer layer 220 serves to protect a transistor formed in a subsequent process from impurities such as alkali ions leaking from the light blocking layer 210 . The buffer layer 220 may be a silicon oxide (SiOx), a silicon nitride (SiNx), or a multilayer thereof.

The semiconductor layer 230 of the thin film transistor 205 is positioned on the buffer layer 220 . The semiconductor layer 110 may be formed of a silicon semiconductor, an oxide semiconductor, or an organic semiconductor. The silicon semiconductor may be formed using amorphous silicon or polycrystalline silicon obtained by crystallizing amorphous silicon. The oxide semiconductor may be formed of any one of zinc oxide (ZnO), indium zinc oxide (InZnO), indium gallium zinc oxide (InGaZnO), or zinc tin oxide (ZnSnO). The organic semiconductor may be formed of a low molecular weight or high molecular weight organic material such as melocyanine, phthalocyanine, pentacene, or thiophene polymer. The semiconductor layer 110 includes a drain region and a source region including p-type or n-type impurities, and includes a channel therebetween.

A gate insulating layer 240 is positioned on the semiconductor layer 230 . The gate insulating layer 240 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The gate electrode 250 is positioned on the gate insulating layer 240 in a predetermined region of the semiconductor layer 230 , that is, in a position corresponding to the channel in which the impurity is implanted. The gate electrode 250 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It is formed of any one or an alloy thereof. In addition, the gate electrode GAT is a group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multi-layer made of any one selected from or alloys thereof. For example, the gate electrode 250 may be a double layer of molybdenum/aluminum-neodymium or molybdenum/aluminum.

An interlayer insulating layer 260 is positioned on the gate electrode 250 to insulate the gate electrode 250 . The interlayer insulating layer 260 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. A source electrode 272 and a drain electrode 275 are positioned on the interlayer insulating layer 260 .

The source electrode 272 and the drain electrode 275 are connected to the semiconductor layer 230 through contact holes exposing the source and drain regions of the semiconductor layer 230 , respectively. The source electrode 272 and the drain electrode 275 may be formed of a single layer or a multilayer, and when the source electrode 272 and the drain electrode 275 are a single layer, molybdenum (Mo), aluminum (Al), chromium It may be made of any one selected from the group consisting of (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. In addition, when the source electrode 272 and the drain electrode 275 are multilayered, a double layer of molybdenum/aluminum-neodymium, a triple layer of titanium/aluminum/titanium, molybdenum/aluminum/molybdenum or molybdenum/aluminum-neodymium/molybdenum can be made with

Accordingly, the thin film transistor 205 including the semiconductor layer 230 , the gate electrode 250 , the source electrode 272 , and the drain electrode 275 is configured.

The passivation layer 130 is positioned on the substrate 110 including the thin film transistor 205 . The passivation layer 130 is an insulating layer that protects an underlying device, and may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. Here, in the organic light emitting display device 100 according to the first embodiment of the present invention, the passivation layer 130 may not be disposed. As will be described later, in the embodiment of the present invention, the passivation layer 130 may be omitted because the ion gas is not transferred to the organic light emitting layer 180 through the separation area DTA and the blocking area CA.

An overcoat layer 140 is positioned on the passivation layer 130 . The overcoat layer 140 may be a planarization layer for alleviating the step difference in the lower structure, and is made of an organic material such as polyimide, benzocyclobutene series resin, or acrylate. A contact part 165 exposing the drain electrode 275 of the lower thin film transistor 205 is disposed in a partial region of the passivation layer 130 and the overcoat layer 150 in a partial region of the overcoat layer 140 .

An organic light emitting diode 60 is formed on the overcoat layer 140 . The organic light emitting diode 60 includes a first electrode 170 connected to the thin film transistor 205 , a second electrode 190 facing the first electrode 170 , and a first electrode 170 and a second electrode 190 . ) and an organic light emitting layer 180 interposed therebetween. The first electrode 160 may be an anode electrode, and the second electrode 190 may be a cathode electrode.

The first electrode 170 is positioned on the overcoat layer 140, and through the passivation layer 130 and the contact portion 165 disposed in a partial region of the overcoat layer 140, the drain electrode ( 275) can be connected. One first electrode 170 may be allocated per subpixel SP, but is not limited thereto. The first electrode 170 is made of a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ZnO (Zinc Oxide), corresponding to the light emitting method adopted, and can function as a transmissive electrode, It may function as a reflective electrode by including a reflective layer. The reflective layer may be made of aluminum (Al), copper (Cu), silver (Ag), nickel (Ni), or an alloy thereof, preferably APC (silver/palladium/copper alloy).

An auxiliary electrode 175 is disposed on the overcoat layer 140 spaced apart from the first electrode 170 . The auxiliary electrode 175 may be made of the same material as the first electrode 170 , and may be formed simultaneously with the first electrode 170 . By separating the auxiliary electrode 175 and the first electrode 170 from each other, the separation area DTA may be formed at the above-described separation distance. The separation area DTA is disposed on organic layers including the overcoat layer 140 disposed under the first electrode 170 and the auxiliary electrode 175 , and on the first electrode 170 and the auxiliary electrode 175 . The organic layers including the bank layer 1000 may be spaced apart from each other so that they are not arranged in contact with each other.

In addition, the first electrode 170 includes an extension 1700 formed to extend from the first electrode 170 so that the bank layer 1000 is not placed in contact with the overcoat layer 140 disposed under the first electrode 170 . may include Here, the auxiliary electrode 175 and the extension 1700 may form a blocking area CA, and the role of the blocking area CA will be described later.

The bank layer 1000 is positioned to be spaced apart from the overcoat layer 140 through the first electrode 170 and the extension 1700 on the substrate 110 on which the first electrode 170 is formed. In addition, a spacer 2000 is disposed on the auxiliary electrode 175 to be spaced apart from the overcoat layer 140 through the auxiliary electrode 175 . Also, the auxiliary electrode 175 may be formed to be wider than the spacer 2000 . In other words, the auxiliary electrode 175 may be formed to be wider than the formation width of the spacer 2000 so that the spacer 2000 is not placed in contact with the overcoat layer 150 disposed under the first electrode 170 .

Although not shown, the bank layer 1000 and the spacer 2000 may be formed in one process. Specifically, one mask is formed by disposing a blocking mask, a halftone mask, and a full tone mask on one mask corresponding to the spacer 2000 corresponding area, the bank 1000 corresponding area, and the separation area DTA of the blocking area CA, respectively. With a mask, it is possible to form the blocking area CA and the separation area DTA at once in one process. For example, a blocking mask may be disposed in an area in which the spacers 2000 are disposed in the blocking area CA, and a halftone mask may be disposed in an area in the blocking area CA in which the bank 1000 is disposed. In addition, a full-tone mask may be disposed in an area corresponding to the separation area DTA so that an organic material is not disposed on the separation area DTA.

The bank layer 1000 may expose the first electrode 170 to form first to third openings OP1 to OP3 in which the organic light emitting layer 180 is disposed in the exposed region. As described above, the first organic emission layer 182 is disposed in the first opening OP1 exposed to the bank layer 1000 , and the second organic emission layer is disposed in the second opening OP2 exposed to the bank layer 1000 . A third organic light emitting layer 186 is disposed in the third opening OP3 exposed to the bank layer 1000 . As described above, the first opening OP1 in which the first organic light emitting layer 182 is disposed will be described and illustrated as an example.

The organic light emitting layer 180 is disposed on the substrate 110 on which the bank layer 1000 is formed. The organic light emitting layer 180 includes an emission layer (EL), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (electron transport layer, ETL), and electron injection. It may further include any one or more of an electron injection layer (EIL).

The second electrode 190 is disposed on the organic emission layer 180 . The second electrode 190 may be widely formed on the entire surface of the substrate 110 . The second electrode 190 may function as a transmissive electrode or a reflective electrode, corresponding to the adopted light emitting method. When the second electrode 190 is a transmissive electrode, it is formed of a transparent conductive material such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or magnesium (Mg), calcium having a thickness thin enough to transmit light. It may be made of (Ca), aluminum (Al), silver (Ag), or an alloy thereof.

Meanwhile, a foreign material 900 may be formed on the spacer 2000 in the process of forming the first organic light emitting layer 182 using a fine metal mask. The foreign material 900 may be formed on the spacer 2000 or the bank layer 1000 during the process of forming the plurality of first organic light emitting layers 182 .

When the first organic light-emitting layer 182 is formed in a state in which the foreign material 900 is formed on the spacer 2000 , the first organic light-emitting layer 182 is disposed on the foreign material 900 . That is, the residue R of the organic light emitting material forming the first organic light emitting layer 182 may be formed on the foreign material 900 .

Also, since the organic light emitting material is not continuously disposed due to the foreign material 900 , the first organic light emitting layer 182 forms an exposed area EA whose cross section is exposed due to the foreign material 900 .

7 is a schematic cross-sectional view of an organic light emitting diode display according to a comparative example of the present invention, FIG. 8 is an enlarged cross-sectional view of area A of FIG. 7 , FIG. 9 is a cross-sectional view illustrating area B of FIG. 7 , and FIG. 10 . is a cross-sectional view illustrating movement of ion gas in the organic light emitting diode display according to the first exemplary embodiment of the present invention.

Here, FIGS. 7 to 10 will be described with reference to FIGS. 1 to 6 to avoid overlapping description and for easy explanation.

Referring to FIGS. 7 and 9 , the organic light emitting diode display 100 according to the first embodiment of the present invention includes a blocking area DTA blocking a path of an ion gas and a separation area CA. In addition, the first organic light emitting layer 182 includes an exposed area EA to which the cross section is exposed.

The exposed area EA is an area in which the cross-section of the first organic light emitting layer 182 is exposed due to the foreign material 900 as the organic light emitting material is not continuously disposed due to the foreign material 900 .

The blocking area DTA may be formed through the extension 1700 formed to extend from the first electrode 170 so that the bank layer 1000 is not placed in contact with the overcoat layer 150 disposed under the first electrode 170 . can In addition, the auxiliary electrode 175 may be formed to be wider than the width of the spacer 2000 .

The separation area DTA is disposed on the first electrode 170 and the auxiliary electrode 175 in organic layers including the overcoat layer 140 disposed under the first electrode 170 and the auxiliary electrode 175 . The organic layers including the bank layer 1000 may be formed to be spaced apart from each other so that they are not disposed in contact with each other.

7 to 10 , in the comparative example, the bank layer 1000 and the spacer 2000 are integrally connected, and the bank layer 1000 and the spacer 2000 are an overcoat layer disposed under the first electrode 170 . It is formed in a shape disposed in contact with the organic layer including 140.

In other words, the bank layer 1000 and the spacer 2000 disposed in contact with the organic layer form an open area OPA providing a movement path MR of the ion gas IM. The open area OPA forms a movement path MR to provide a path through which the cross-section of the first organic light emitting layer 182 can reach the exposed area EA. Specifically, the ion gas IM is generated on the circuit element layer 120 , passes through the overcoat layer 140 , passes through the bank layer 1000 , the spacer 2000 , and the foreign material 900 to reach the exposed area EA. there will be

Accordingly, the hole injection layer HTL, the first hole transport layer HTL1, and the first emission layer and the first electron transport layer of the first organic emission layer 182 are on the exposed area EA where the cross section of the first organic emission layer 182 is exposed. (ETL1), the second hole transport layer (HTL2), the second light emitting layer, the second electron transport layer (ETL1) and the cathode may be disposed, but the present invention is not limited thereto, and may be formed by selectively adding other components or changing the order. In addition, the cathode may be the same electrode as the second electrode 190 of the present invention, and the first and second light-emitting layers may be light-emitting layers formed by phosphorescence.

When the ion gas IM drives the organic light emitting display device, an electric field is formed to move to the first and second light emitting layers along the exposed area EA where the cross-section of the first organic light emitting layer 182 is exposed. Specifically, the ion gas IM generated in the circuit element layer 120 may move to the foreign material along the movement path MR. When the ion gas IM moves along the movement path MR, it may be outgassed through the foreign material 900 . However, since the ion gas IM is an ion having a negative charge, it may easily move to the first electrode 170 to which a positive charge is applied. For example, when a positive charge is applied to the first electrode 170 , the ion gas IM having a negative charge may easily move in the direction of the first electrode 170 by the electric field. Accordingly, the ion gas IM may be introduced into the first organic emission layer 182 from the exposed area EA to cause deterioration of the first organic emission layer 182 .

Here, the first and second light-emitting layers formed of a phosphor may be broken due to ion gas (IM), and the first and second light-emitting layers may be deteriorated, thereby degrading the emission quality of the first organic light-emitting layer 182 . On the other hand, the hole transport layer, the electron transport layer, etc. excluding the first and second emission layers may not react to the ion gas IM.

On the other hand, referring to FIG. 10 , in the organic light emitting display device 100 according to the first embodiment of the present invention, the foreign material 900 is disposed on the spacer 2000 to expose the cross-section of the first organic light emitting layer 182 . (EA) may be formed. As described above, the exposed area EA may provide a cause for the ion gas IM to flow into the first organic emission layer 182 . The introduced ion gas IM may generate black spots and white spots in the first organic light emitting layer 182 .

However, in the organic light emitting diode display 100 according to the first embodiment of the present invention, the organic layer that can serve as the movement path MR is not disposed on the separation area DTA. That is, in the separation region DTA, there is no organic layer through which the ion gas IM can be transmitted, and the hole transport layer and the electron transport layer that do not react to the ion gas IM are disposed in contact with the overcoat layer 140 . Transmission of the ion gas IM to the first organic emission layer 182 including the first and second emission layers may be blocked.

In addition, the blocking area CA for blocking the movement path MR of the ion gas IM is disposed in the organic light emitting diode display 100 according to the first embodiment of the present invention. That is, through the auxiliary electrode 175 and the extension 1700 of the first electrode 170, the organic layer including the overcoat layer 140 and the spacer 2000 or the bank layer 1000 are not arranged in contact with each other. A movement path MR through which the ion gas IM flows into the first organic emission layer 182 through the exposed area EA may be blocked.

As described above, in the organic light emitting display device 100 according to the first embodiment of the present invention, the organic light emitting layer 180 is formed by forming the separation area DTA from which the organic layer is removed and the blocking area CA through the electrodes 170 and 175 . ), it is possible to block the movement path (MR) of the ion gas (IM) that penetrates. Accordingly, by blocking the movement path MR of the ion gas IM, the generation of black spots and white spots in the organic light emitting layer 180 can be suppressed, thereby securing the reliability of the organic light emitting layer 180 .

11 is a plan view of an organic light emitting display device according to a second exemplary embodiment of the present invention, and FIG. 12 is a cross-sectional view taken along line II-II′ of FIG. 11 .

Here, FIGS. 11 and 12 will be described with reference to FIGS. 1 to 10 for easy explanation and avoiding overlapping description.

In the organic light emitting diode display 200 according to the second embodiment of the present invention, the foreign material 900 may be formed not only on the spacer 2000 but also on the bank layer 1000 . Accordingly, the exposed area EA - 2 exposing the cross section of the first organic light emitting layer 182 may be formed on the bank layer 1000 .

The organic light emitting diode display 200 according to the second embodiment of the present invention includes a blocking area CA and a separation area DTA for blocking the path of the ion gas. In addition, the first organic light emitting layer 182 includes an exposed area EA-2 to which the cross section is exposed. An exposed area EA - 2 exposing a cross section of the first organic light emitting layer 182 may be formed on the bank layer 1000 .

In the exposed area EA-2 formed on the bank layer 1000 , the organic light emitting material is not continuously disposed due to the foreign material 900 , so that the cross section of the first organic light emitting layer 182 is exposed due to the foreign material 900 do.

The blocking area CA may block the ion gas IM from flowing into the first organic light emitting layer 182 through the exposed area EA-2 formed on the bank layer 1000 .

Furthermore, the first electrode 170 of the organic light emitting diode display 200 according to the second embodiment of the present invention differs from the first embodiment of the present invention by not only the spaced area DTA adjacent to the auxiliary electrode 175 but also the first electrode 170 . The extension 1700-1 exposing the first electrode 170 may be disposed along the edge region of the first electrode 170 . That is, the extension unit 1700-1 prevents the bank layer 1000 and the organic layer, for example, the overcoat layer 140, disposed on the area indicated by the second separation area DTA2 in the drawing from being in contact with each other. can do.

By removing the bank layer 1000 on the second separation area DTA2 , it is possible to prevent the organic layer from being in contact with the bank layer 1000 on the second separation area DTA2 . In other words, when the bank layer 1000 is disposed on the second separation area DTA2 , similar to the open area OPA of FIG. 7 , the bank layer 1000 and the organic layer may be in contact with each other. When the foreign material 9000 is generated on the bank layer 1000 , when the bank layer 1000 is disposed on the second separation area DTA2 , the organic layer and the bank layer 1000 that are disposed in contact with each other are formed by ion gas (IM). ) to form a movement path MR. Accordingly, the ion gas IM may move onto the exposed area EA where the foreign material 900 is disposed, that is, the exposed area EA of the bank layer 1000 . Accordingly, the first organic light emitting layer 182 receiving the ion gas IM from the movement path MR is deteriorated.

Accordingly, in the organic light emitting diode display 200 according to the second embodiment of the present invention, the bank layer is removed on the second separation area DTA2 to prevent the organic layer from contacting the bank layer 1000, thereby preventing the second separation area (DTA2) from being in contact with each other. The ion gas IM moving along the DTA2 may be prevented from flowing into the first organic light emitting layer 182 . In other words, by forming the extension portion 1700-1 along the edge region of the first electrode 170, the second separation region DTA2 capable of preventing contact between the organic layer and the bank layer 1000 may be formed. have.

As described above, in the organic light emitting display device 200 according to the second exemplary embodiment of the present invention, the organic light emitting layer is formed by forming the second separation area DTA2 from which the organic layer is removed and the blocking area CA through the electrodes 170 and 175 . The movement path MR of the ion gas IM penetrating to 180 may be blocked. Accordingly, by blocking the movement path MR of the ion gas IM, the generation of black spots and white spots in the organic light emitting layer 180 can be suppressed, thereby securing the reliability of the organic light emitting layer 180 .

13 is a plan view illustrating an auxiliary electrode of an organic light emitting diode display according to a third exemplary embodiment of the present invention.

Here, Fig. 12 will be described with reference to Figs. 1 to 10 for easy explanation and avoiding redundant explanation.

In the organic light emitting diode display 300 according to the third exemplary embodiment of the present invention, an auxiliary electrode 175 - 3 is disposed on the overcoat layer 140 spaced apart from the first electrode 170 . The auxiliary electrode 175 - 3 may be made of the same material as the first electrode 170 , and may be formed simultaneously with the first electrode 170 . By separating the auxiliary electrode 175 - 3 from the first electrode 170 , the separation area DTA may be formed at the above-described separation distance. The separation area DTA includes organic layers including the overcoat layer 140 disposed under the first electrode 170 and the auxiliary electrode 175 - 3 , and the first electrode 170 and the auxiliary electrode 175 - 3 . ) may be spaced apart from each other so that the organic layers including the bank layer 1000 are not disposed in contact with each other.

In addition, the first electrode 170 includes an extension 1700 formed to extend from the first electrode 170 so that the bank layer 1000 is not placed in contact with the overcoat layer 140 disposed under the first electrode 170 . may include Here, the auxiliary electrode 175 and the extension 1700 may form a blocking area CA.

In the organic light emitting diode display 300 according to the third exemplary embodiment of the present invention, the auxiliary electrode 175 - 3 may have various shapes. In the first embodiment of the present invention, the auxiliary electrode 175 having a rectangular shape is formed, and the spacer 2000 is disposed on the auxiliary electrode 175 having the rectangular shape.

However, in the organic light emitting diode display 300 according to the third exemplary embodiment of the present invention, the auxiliary electrode 175 - 3 is formed in a circular shape to correspond to the shape of the spacer 2000 to form the spaced area DTA. can be transformed.

In other words, as the shape of the separation area DTA is changed, the arrangement shape of the bank layer 1000 may be changed to secure a degree of freedom in design. For example, as the shape of the auxiliary electrode 175 - 3 is deformed, the shape of the first to third openings OP1 to OP3 formed of the bank layer 1000 can be freely designed to provide a space for increasing the opening ratio. can be obtained

Here, the organic light emitting display device 300 according to the third exemplary embodiment of the present invention shows a simple circular auxiliary electrode 175-3, but may be formed in various shapes such as circular and polygonal shapes.

As described above, in the organic light emitting display device 300 according to the third exemplary embodiment of the present invention, the organic light emitting layer is formed by forming the separation area DTA from which the organic layer is removed and the blocking area CA through the electrodes 170 and 175 - 3 . The movement path MR of the ion gas IM penetrating to 180 may be blocked. Accordingly, by blocking the movement path MR of the ion gas IM, the generation of black spots and white spots in the organic light emitting layer 180 can be suppressed, thereby securing the reliability of the organic light emitting layer 180 .

Those skilled in the art through the above description will be able to see that various changes and modifications are possible without departing from the technical spirit of the present specification. Accordingly, the technical scope of the present specification should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

100: organic light emitting display device 1000: bank layer
2000: spacer 165: contact part
170: first electrode 175: auxiliary electrode
190: second electrode DTA: separation area
CA: Blocked area EA: Exposed area

Claims (17)

an organic film covering the circuit element layer;
a first electrode of an organic light emitting diode disposed on the organic layer and connected to the circuit element layer;
an auxiliary electrode disposed on the same layer as the first electrode and spaced apart from the first electrode;
a bank layer disposed on the first electrode;
a spacer disposed on the auxiliary electrode; and
an organic light emitting layer disposed on the bank layer and the spacer; including,
Between the organic layer, the first electrode, the auxiliary electrode, and the spacer,
The auxiliary electrode and the first electrode are provided with a blocking region blocking the movement path of the ion gas,
An organic light emitting display device, wherein a separation region separating the bank layer and the spacer and separating the spacer from the organic layer is disposed between the first electrode and the auxiliary electrode.
According to claim 1,
The separation area is
The organic light emitting display device spaced apart from each other so that the organic layer disposed under the first electrode and the auxiliary electrode and the bank layer disposed on the first electrode and the auxiliary electrode are not disposed in contact with each other.
According to claim 1,
The first electrode is
and an extension portion extending from the first electrode so that the bank layer is not disposed in contact with the organic layer disposed under the first electrode.
According to claim 1,
The width of the auxiliary electrode disposed on the blocking region is,
An organic light emitting diode display disposed wider than a width of the spacer.
According to claim 1,
The organic layer includes an overcoat layer.
According to claim 1,
On the separation area,
The bank layer adjacent to the spacer is spaced apart from each other, and a portion of the auxiliary electrode, an extension of the first electrode, and the organic layer are exposed.
According to claim 1,
The organic light emitting diode,
an organic light emitting layer disposed on the first electrode;
a second electrode disposed on the organic light emitting layer;
The organic light emitting layer,
and foreign substances and residues disposed on at least one of the spacer and the bank layer.
8. The method of claim 7,
and an exposure region exposing a cross section of the organic light emitting layer is further disposed on the spacer or the bank layer.
9. The method of claim 8,
The blocking area and the separation area,
The organic light emitting display device blocks a movement path of the ion gas moving from the organic layer to the exposed region through the spacer and the bank layer.
9. The method of claim 8,
The organic light emitting display device, wherein the exposed region is disposed on the spacer or the bank layer along a cross section of the foreign material.
According to claim 1,
The organic light emitting diode,
a first organic light emitting layer disposed in the first opening exposed to the bank layer;
a second organic light emitting layer disposed in a second opening exposed to the bank layer;
and a third organic light emitting layer disposed in a third opening exposed to the bank layer.
12. The method of claim 11,
An organic light emitting display device comprising a light emitting layer in which at least one of the first organic light emitting layer to the third organic light emitting layer is formed of a phosphorescent material.
According to claim 1,
On the organic layer disposed between the circuit element layer and the organic light emitting diode,
An organic light emitting display device in which a contact portion formed by penetrating the organic layer is disposed.
According to claim 1,
The auxiliary electrode is formed in at least one of a rectangular shape, a circular shape, and a polygonal shape.
According to claim 1,
The separation area is
the organic layer and the bank layer;
the organic layer and the spacer, and
The spacer and the bank layer are spaced apart from each other so that they are discontinuously disposed, and the ion gas movement path is blocked.
According to claim 1,
The blocking area is
the auxiliary electrode disposed between the spacer and the organic layer; and
The organic light emitting display device in which the first electrode disposed between the bank layer and the organic layer blocks a movement path of the ion gas.
2. The method of claim 1
A second separation region from which the bank layer is removed is further disposed on the organic layer,
In the second spaced region, an extension portion exposing a portion of the first electrode is disposed along an edge region of the first electrode.

Images