KR20210080935A - Composition of semi-conductive compound - Google Patents

Abstract

The present invention relates to a semi-conducting resin used in a high voltage power cable. Specifically, a polyolefin-based base resin contains carbon black, additives, crosslinking agents, oxidizing agents and lubricants to have excellent conductivity and durability and have excellent extrusion processability.

Description

Semiconducting compound composition {COMPOSITION OF SEMI-CONDUCTIVE COMPOUND}

The present invention relates to a semiconducting resin used in a high voltage power cable. Specifically, it relates to a semiconducting resin having excellent processability and mechanical strength by including carbon black, an additive, a crosslinking agent, an oxidizing agent and a lubricant in a polyolefin-based base resin, and particularly, having an excellent volume resistance value even at a high temperature.

Semi-conductive materials used in cables are mainly used as intermediate layers to maintain the life of the cables for a long time by placing them between the insulator layer and the conductors of the cables to prevent the generation of space charges, etc.

The semiconducting composition used as such a semiconducting layer is mainly prepared from a composition further comprising a conductive material in a polymer resin. Examples of the conductive material include graphene, carbon nanotube, and carbon black.

Among them, carbon black is widely used for its economical efficiency and ease of use. However, when carbon black is included in an excessive amount in the semiconducting material, the fluidity of the semiconducting composition is lowered, and thus the viscosity of the composition during melting is increased, resulting in problems such as partial carbonization. Therefore, it is required to solve this.

Republic of Korea Patent Publication No. 10-2019-0015116 (2019.02.13)

In order to solve the above problems, the applicant of the present invention has excellent processability in processing such as extrusion due to excellent fluidity in using carbon black, no defects such as partial carbonization, and conductivity and mechanical properties even when used in a small amount It is to provide an excellent semiconducting composition that maintains.

The present invention provides ethyl vinyl acetate resin, low density polyethylene resin, ether-based phenolic compound, thioether-based compound, metal stearate, polyolefin wax, OAN (Oil absorption number) value of 100 to 140 cc/100g, particle size of 10 to 60 It provides a semi-conductive resin composition for a cable prepared including carbon black and a crosslinking agent of nm.

For one aspect of the present invention, the ethyl vinyl acetate may include those having a weight average molecular weight of 1,000 g/mol to 1,000,000 g/mol.

For one aspect of the present invention, the low-density polyethylene resin may include a melt index (230° C., 2.16 kg) of 1.0 to 3.

In one embodiment of the present invention, the ether-based phenolic compound is 2,2'-thiodiethylene-bis-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4'- thio-bis-(2-t-butyl-5-methylphenol), diethyl((3,5-bis-(1,1-dimethylethyl)-4-hydroxyphenyl)methyl)phosphonate and N; and at least one selected from the group consisting of N'-bis-(3-(3',5'-di-t-butyl-4'-hydroxyphenyl)propionyl)hydrazine.

In one embodiment of the present invention, the thioether-based compound is dilaurylthiodipropionate, ditridecylthiodipropionate, dimyristylthiodipropionate, dioctadecyldisulfide, bis[2-methyl- 4-(3-n-dodecylthiopropionyloxy)-5-tert-butylphenyl]sulfide, pentaerythritol-tetrakis-(3-laurylthiopropionate), 1,4-cyclohexanedimethanol; It may include at least one selected from the group consisting of 3,3'-thiobispropanoic acid dimethyl ester polymer and distearylthiodipropionate.

For one embodiment of the present invention, the metal stearate may include zinc stearate, calcium stearate, aluminum stearate, magnesium stearate, and the like.

In one embodiment of the present invention, the polyolefin wax may include polyethylene wax, polypropylene wax, polybutylene wax, and modified polyolefin wax.

In one aspect of the present invention, the crosslinking agent is 1,1-(tertbutylperoxy)-3,3,5-trimethylcyclohexane, n-butyl-4,4-(bis-butyl peroxy)valerate, Dicumylperoxide (DCP), perbutylperoxide, 1,1-bis(tertiary-butylperoxy)-diisopropylbenzene, benzoyl peroxide, 2,5-dimethyl-2,5-di-ter selected from the group consisting of sherry-butylperoxyhexane, tert-butylperoxybenzoate, di-tert-butylperoxide and 2,5-dimethyl-2,5-di-tertiary-butylperoxylhexane, and the like. It may contain more than one species.

For one aspect of the present invention, the semiconductive resin composition may include a processing pressure of 410 bar or less and a torque value of 265 Nm or less, and a volume resistance of 200 Ω·cm or less at 90°C.

In addition, the present invention may be a cable having a semi-conductive layer of the cable made of the semi-conductive resin composition.

The present invention uses ethylene vinyl acetate and low-density polyethylene as a base resin, and combines a combination of an oxidizing agent with a specific structure and carbon black with a specific characteristic, so that the extrusion fluidity is unpredictably excellent, and the inversion is characterized by low volume resistance. A porcelain resin composition can be provided.

Hereinafter, the present invention will be described in more detail through embodiments or examples including the accompanying drawings. However, the following specific examples or examples are only a reference for describing the present invention in detail, and the present invention is not limited thereto, and may be implemented in various forms.

Also, unless defined otherwise, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description herein is for the purpose of effectively describing particular embodiments only and is not intended to limit the invention.

Also, the singular forms used in the specification and appended claims may also be intended to include the plural forms unless the context specifically dictates otherwise.

In addition, when a part "includes" a certain component, this means that other components may be further included, rather than excluding other components, unless otherwise stated.

In addition, unless specifically limited, the composition of the present invention means a weight ratio.

The present invention is to provide a semiconducting resin composition suitable for forming an inner semiconducting layer of a medium voltage power cable, and the present invention will be specifically described below.

The present invention uses ethyl vinyl acetate and a low-density polyethylene resin as a base resin, a mixed antioxidant of an ether-based phenol antioxidant and a thioether-based antioxidant, an OAN (Oil absorption number) value of 100 to 140 cc/100g, a particle size Provided is a semi-conductive resin composition for a cable prepared including carbon black having a size of 10 to 60 nm and a crosslinking agent.

In addition, the present invention uses ethyl vinyl acetate and a low-density polyethylene resin as a base resin, a mixed antioxidant of an ether-based phenol antioxidant and a thioether-based antioxidant, an OAN (Oil absorption number) value of 100 to 140 cc/100g, particle size Provided is a semi-conductive resin composition for a cable prepared by further comprising any one or more components selected from carbon black having a value of 10 to 60 nm, a crosslinking agent, a metal ester-based compound, and a lubricant.

Although not particularly limited, as a specific example of the present invention, 10 to 40 parts by weight of a low-density polyethylene resin, 0.1 to 3 parts by weight of an ether-based phenol compound, 0.1 to 3 parts by weight of a thioether-based compound, OAN ( Oil absorption number) value is 100 to 140 cc/100g, the particle size is 10 to 60 nm, 30 to 100 parts by weight of carbon black and 0.1 to 5 parts by weight of a crosslinking agent A semiconducting resin composition for a cable prepared including 0.1 to 5 parts by weight can be exemplified. .

Although not particularly limited, as a specific example of the present invention, 10 to 40 parts by weight of a low-density polyethylene resin, 0.1 to 3 parts by weight of an ether-based phenol compound, 0.1 to 3 parts by weight of a thioether-based compound, OAN ( Oil absorption number) value of 100 to 140 cc/100g, carbon black having a particle size of 10 to 60 nm 30 to 100 parts by weight, metal stearate 0.5 to 3 parts by weight, polyolefin wax 1 to 30 parts by weight, and a crosslinking agent 0.1 to A semi-conductive resin composition for a cable prepared by including 5 parts by weight may be exemplified.

The semi-conductive resin composition is used for the semiconductive layer between the conductive layer and the insulating layer in a power cable, the electrical resistance of 10 ⁰ to It may have a value of ^{10 3 Ωcm.}

In the present invention, the composition has increased fluidity and increased fluidity during extrusion of cables, so that partial carbonization does not occur, and productivity can be increased by lowering the pressure of extrusion, and also excellent mechanical properties and oxidation stability. nice to be able to get

Hereinafter, the components of the composition of the present invention will be described.

In the present invention, the ethylene vinyl acetate resin is not particularly limited, but for example, it is preferable to use a copolymer having a weight average molecular weight of 1,000 g/mol to 1,000,000 g/mol, more preferably 5,000 g/mol to 800,000 g/mol, more preferably from 10,000 g/mol to 600,000 g/mol can be used. In addition, the PDI value of the ethylene vinyl acetate may be 3.0 to 5, preferably 3.3 to 4.5, more preferably 3.5 to 3.0.

In addition, the content ratio of vinyl acetate in the ethylene vinyl acetate may be 10 to 30%, preferably 15 to 25, and more preferably 18 to 20%.

As vinyl acetate in the above range is included in ethylene vinyl acetate, it can have uniform mixing with the low-density polyethylene resin mixed together and low crystallinity, so it is suitable for use in materials such as cables that must be excellent in durability and flexibility . By using ethylene vinyl acetate in the above range, it is possible to prepare a semiconducting resin composition having good processability and excellent mechanical properties after processing.

The low-density polyethylene resin included to prepare the semi-conductive resin composition is not particularly limited, but for example, the melt index (230° C., 2.16 kg) may have a value of 1.0 to 3, preferably 1.5 to 2.5. , more preferably 2.0 to 2.3. 10 to 40 parts by weight of the low-density polyethylene resin may be included in 100 parts by weight of the ethylene vinyl acetate, preferably 15 to 30 parts by weight. As the low-density polyethylene resin is used within the above range, the semi-conductive resin composition has excellent processing characteristics and torsion against stress, so it is easy to use as a power cable requiring high mechanical strength.

As the low-density polyethylene resin in the melt index range is used, compatibility with ethylene vinyl acetate is excellent when processing into a semi-conductive resin composition, and the cause is not clear, but in combination with the mixed antioxidant and carbon black, the present invention It is good that the desired extrusion processability can achieve a more excellent effect.

Next, the carbon black of the present invention will be described. When the carbon black of the present invention has an oil absorption number (OAN) value of 100 to 140 cc/100g and a particle size of 10 to 60 nm, the effect of the present invention can be significantly increased. When the OAN value and the particle size value have the above values, the extrusion pressure for extruding a Gottfert Extruder of 30 mmΦ at a temperature of 120 ° C, which is the purpose of the present invention, is 430 bar or less, preferably 350 to 410 bar, Torque A workability of 265 Nm or less can be obtained. By using the above carbon black, it is possible not only to increase the conductivity of the semiconducting composition, but also to be uniformly dispersed on the surface of the semiconducting layer to narrow the difference in shrinkage and expansion rates between adjacent regions on the surface of the semiconducting layer, so that the surface of the semiconducting layer The smoothness can be improved. In the present invention, when it is considered that the effect of the present invention cannot be achieved when the carbon black has an OAN value and a particle size outside the above range, an unexpected effect in the above range can be seen.

In addition, in the present invention, when the conditions in which the OAN value of carbon black is 100 to 140 cc/100g and the condition having a particle size in the range of 10 to 60 nm are combined, the processing pressure is 410 bar or less and the torque value is 265 Nm or less. At the same time, it is possible to provide an excellent semiconducting resin composition having a volume resistance of 200 Ω·cm or less at 90°C.

When the composition of the present invention is used, extrusion processability can be improved without the need to reduce the carbon black content of the semiconducting resin composition, and there is no need to reduce the carbon black content in order to increase extrusion processability as in the prior art. There is no need to further include additional additives. By using the composition of the present invention, the volume resistance value of the semiconducting resin composition is also excellent by maintaining the carbon black content, and extrusion processability is improved without reduction of other numerical values (mechanical strength and chemical resistance, etc.) have.

In addition, in the present invention, it may be prepared by adding another carbon black or conductive material including the carbon black of the present invention.

Next, the mixed antioxidant of the present invention will be described.

By using the mixed antioxidant of the present invention, although it is not particularly shown as an example, it is good to prevent significant partial carbonization compared to using alone or other antioxidants.

About one aspect of the invention. The ether-based phenolic compound is 2,2'-thiodiethylene-bis-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4'-thio-bis-(2- t-Butyl-5-methylphenol), diethyl ((3,5-bis-(1,1-dimethylethyl)-4-hydroxyphenyl)methyl)phosphonate and N,N'-bis-(3 It may include at least one selected from the group consisting of -(3',5'-di-t-butyl-4'-hydroxyphenyl)propionyl)hydrazine.

The thioether-based compound of the present invention is dilaurylthiodipropionate, ditridecylthiodipropionate, dimyristylthiodipropionate, dioctadecyldisulfide, bis[2-methyl-4-(3) -n-dodecylthiopropionyloxy)-5-tert-butylphenyl]sulfide, pentaerythritol-tetrakis-(3-laurylthiopropionate),1,4-cyclohexanedimethanol, 3,3' -It may include at least one selected from the group consisting of thiobispropanoic acid dimethyl ester polymer and distearylthiodipropionate.

The composition ratio of the mixed antioxidant is not particularly limited, but for example, 1:1 may be used, but is not limited thereto. In addition, it can be used within 0.1 to 6 parts by weight based on the total composition of the present invention, but is not necessarily limited thereto.

By using the mixed antioxidant, the processability of the polymer can be increased by processing the semiconducting resin composition, and oxidation of the polymer can be prevented, and the volume resistance can be further reduced.

The metal stearate of the present invention may be included, and specifically, zinc stearate, calcium stearate, aluminum stearate and magnesium stearate may be included, and preferably calcium stearate and zinc stearate. It may include, but more preferably include, zinc stearate, but is not limited thereto.

The metal stearate content may include 0.1 to 5 parts by weight, preferably 1 to 3 parts by weight, based on 100 parts by weight of the ethylene vinyl acetate.

By further including the metal stearate, it is possible to minimize the sloughing phenomenon of the polymer. The semiconducting layer of the present invention prepared from the content of the metal stearate does not generate protrusions on the surface, and can impart excellent surface properties. In addition, the metal stearate improves the fluidity of the electrically conductive resin composition, and thus, when molding the metal stearate, it is possible to minimize the electrical conductivity deviation due to stretching.

In one embodiment of the present invention, the polyolefin wax may include polyethylene wax, polypropylene wax, polybutylene wax, and modified polyolefin wax.

The polyolefin wax may contain 1 to 30 parts by weight based on 100 parts by weight of the ethylene vinyl acetate, preferably 5 to 20 parts by weight, and more preferably 10 to 15 parts by weight.

As the polyolefin wax is further included, processability is improved when the semiconducting resin composition is prepared.

In one embodiment of the present invention, the crosslinking agent is 1,1-(tertbutylperoxy)-3,3,5-trimethylcyclohexane n-butyl-4,4-(bis-butyl peroxy)valerate, DQ Milperoxide, perbutylperoxide, 1,1-bis(tertiary-butylperoxy)-diisopropylbenzene, benzoyl peroxide, 2,5-dimethyl-2,5-di-tert-butylperoxyhexane , tertiary-butylperoxybenzoate, di-tert-butylperoxide and 2,5-dimethyl-2,5-di-tertiary-butylperoxylhexane, etc. may contain at least one selected from the group consisting of can

The crosslinkable polymer is crosslinked using a crosslinking agent. One suitable method is to impregnate the polymer powder or polymer pellets with a crosslinking agent. The mixture is then heated to a temperature higher than the decomposition temperature of the crosslinking agent. Suitable crosslinking agents which may be used are, for example, 1,1-(tertbutylperoxy)-3,3,5-trimethylcyclohexane, n-butyl-4,4-(bis-butyl peroxy)valerate, Dicumylperoxide (DCP), perbutylperoxide, 1,1-bis(tertiary-butylperoxy)-diisopropylbenzene, benzoyl peroxide, 2,5-dimethyl-2,5-di-ter sherry-butylperoxyhexane, tert-butylperoxybenzoate, di-tertiary-butylperoxide and 2,5-dimethyl-2,5-di-tertiary-butylperoxylhexane; and the like. , preferably perbutyl peroxide, 1,1-(tertiary butyl peroxy)-3,3,5-trimethylcyclohexane, benzoyl peroxide and dicumyl peroxide, and the like, and more preferably DQ Mil peroxide and perbutyl peroxide may include, but are not limited to.

0.1 to 5 parts by weight of the crosslinking agent may be included in 100 parts by weight of the ethylene vinyl acetate. When the amount of the crosslinking agent is less than 0.1, crosslinking may not be sufficiently performed and final physical properties may be deteriorated, and when the crosslinking agent is included in an amount of 5 parts by weight or more, moldability may deteriorate.

As the crosslinking agent is included within the above range, the crosslinking property of the base resin is improved and the dispersibility of the additive is increased to increase the lifespan when applied to a semiconducting layer of a power line.

The semiconducting resin composition is easy to use as a semiconducting layer of a cable, and in particular, since the semiconducting layer may have a low volume resistance value even at a high temperature, it is suitable for use in a semiconducting layer of a high voltage cable.

When high voltage power flows from the power cable to the conductor, partial discharge flows to the semiconducting layer and the temperature may rise due to the volume resistance of the semiconducting layer.

As the temperature of the semiconducting layer increases, the volume resistance value in the semiconducting layer further increases. Due to the above effect, the lifespan of the power cable is shortened. The semi-conductive resin composition for a cable of the present invention has a low volume resistance even at a high temperature, and thus an increase in volume resistance according to a temperature rise is suppressed, so it is effective for use in a power cable.

Hereinafter, the present invention will be described in more detail based on Examples and Comparative Examples. However, the following Examples and Comparative Examples are merely examples for explaining the present invention in more detail, and the present invention is not limited by the following Examples and Comparative Examples.

[Example 1]

The semiconducting resin composition was prepared by kneading at 150° C. for 30 minutes in a Banbury Mixer. With respect to 100 parts by weight of an ethylene ethyl acrylate copolymer having a vinyl acrylate content of 18 mol% and a melt index (ASTM 1238, 190° C., 2.16 kgf) of 2.0 g/10 min, the melt index (ASTM 1238, 190° C., 2.16) kgf) of 2.0 g/10 min low-density polyethylene is mixed and sufficiently melted, then 0.57 parts by weight of dimyristyl thiodipropionate (DSTDP), 4,4'-thio-bis-(2-t-butyl- 5-methylphenol) (TBM-6) 0.37 parts by weight, ethylene wax (NC-102N) 6 parts by weight, first carbon black (OAN 117 cc/100g, particle size 19nm) 48.07 parts by weight, second carbon black (OAN) 122 cc/100g, particle size 45nm) 28.8 parts by weight, 1.35 parts by weight of zinc stearate, 0.44 parts by weight of cumyl peroxide, and 1.77 parts by weight of perbutyl peroxide. Pre-blending mixtures were added by 1/3 at intervals of 5 minutes. After that, the mixture was kneaded for 30 minutes. The prepared compound was extruded at 30mmΦ to evaluate the extrusion processability (pressure and torque), and are described in Table 1. The extrusion equipment was a Gottfert Extruder (30mmΦ, Screw Length/Diameter rato 24/1, Die Diameter 30mm, Die Gap 2mm), and temperature conditions (Z1/Z2/Z3/Z4 = 110/110/110/120 ℃) ) was carried out.

[Example 2]

Except that in Example 1, 28.8 parts by weight of the first carbon black (OAN 117 cc/100g, particle size 19nm) was replaced with 28.8 parts by weight and additionally 48.07 parts by weight of the second carbon black (OAN 124 cc/100g, particle size 55nm) was further included. The same was carried out.

[Example 3]

In Example 1, the same procedure was performed except that the first carbon black was replaced with 48.07 parts by weight of OAN 117 cc/100g and 28.8 parts by weight of the second carbon black (OAN 124 cc/100g, particle size 55 nm) was further included.

[Comparative Example 1]

In Example 1, 28.8 parts by weight of the first carbon black (OAN 122 cc/100g, particle size 45 nm) was replaced with 28.8 parts by weight, and 48.07 parts by weight of the second carbon black (OAN 153 cc/100g, particle size 24 nm) was further included except that was performed in the same way.

[Comparative Example 2]

In Example 1, 48.07 parts by weight of the first carbon black (OAN 122 cc/100g, particle size 45 nm) was replaced with 48.07 parts by weight, and 28.8 parts by weight of the second carbon black (OAN 153 cc/100g, particle size 24 nm) was further included, except that was performed in the same way.

[Comparative Example 3]

In Example 1, 28.8 parts by weight of the first carbon black (OAN 124 cc/100g, particle size 55 nm) was replaced with 28.8 parts by weight, and 48.07 parts by weight of the second carbon black (OAN 153 cc/100g, particle size 24 nm) was further included except that was performed in the same way.

[Comparative Example 4]

In Example 1, 4,4'-thio-bis-(2-t-butyl-5-methylphenol) (TBM-6) was included in an amount of 0.94 parts by weight instead of dimyristylthiodipropionate (DSTDP) The same procedure was performed except for

Pressure (bar) Torque (Nm) 90℃ volume resistance (Ω cm) Example 1 428 281 149 Example 2 388 253 157 Example 3 412 269 143 Comparative Example 1 445 312 327 Comparative Example 2 432 283 394 Comparative Example 3 439 299 404 Comparative Example 4 408 270 210

In Table 1, it was confirmed that the pressure and torque values were changed with respect to the type, content, and content ratio of carbon black.

As in the comparative example, when the OAN value was 140 cc/100 g or more, the pressure during extrusion processing was 420 bar or more and the torque was 275 Nm or more, and it was confirmed that the extrusion processability was greatly reduced, and the volume resistance at 90 ° C. 390 Ω·cm or more was measured.

On the other hand, in the Example, the OAN value was 140 cc/100g or less, and exhibited properties having higher efficiency of extrusion strength and volume resistance than the comparative examples.

In addition, in the present invention, when the OAN value of the carbon black is 100 to 140 cc/100g, when the size of the nanoparticles is less than 10 nm, extrusion processing is difficult, and when the size of the nanoparticles is 60 nm or more, the volume resistance value of 500 Ω·cm or more is measured. It was not easy to use for power cables.

It is possible to prepare a semiconducting resin composition featuring excellent extrusion processability and low volume resistance only by using carbon black having an OAN value in the range of 100 to 140 cc/100g and at the same time having a particle size in the range of 10 to 60 nm. can

This confirmed that extrusion processability can be controlled through structural differences and mixing of carbon black, and through this, the physical or electrical properties of the semi-conductive resin composition are maintained and the efficiency of extrusion processability is increased. .

As described above, the present invention has been described with specific matters and limited examples and drawings, but these are only provided to help a more general understanding of the present invention, and the present invention is not limited to the above embodiments, and the present invention is not limited to the above embodiments. Various modifications and variations are possible from these descriptions by those of ordinary skill in the art.

Therefore, the spirit of the present invention should not be limited to the described embodiments, and not only the claims to be described later, but also all those with equivalent or equivalent modifications to the claims will be said to belong to the scope of the spirit of the present invention. .

Claims (10)

Ethyl vinyl acetate resin, low-density polyethylene resin, ether-based phenolic compound, thioether-based compound, metal stearate, polyolefin wax, OAN (Oil absorption number) value of 100 to 140 cc/100g, particle size of 10 to 60 nm carbon A semi-conductive resin composition for cables manufactured including black and a crosslinking agent. The method of claim 1,
The ethyl vinyl acetate is a semiconducting resin composition for a cable comprising a weight average molecular weight of 1,000 g / mol to 1,000,000 g / mol. The method of claim 1,
The low-density polyethylene resin has a melt index (230° C., 2.16 kg) of 1.0 to 3, a semi-conductive resin composition for cables for cables. The method of claim 1,
The ether-based phenolic compound is 2,2'-thiodiethylene-bis-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4'-thio-bis-(2- t-Butyl-5-methylphenol), diethyl ((3,5-bis-(1,1-dimethylethyl)-4-hydroxyphenyl)methyl)phosphonate and N,N'-bis-(3 -(3',5'-di-t-butyl-4'-hydroxyphenyl) propionyl) semiconducting resin composition for a cable, characterized in that it comprises at least one selected from the group consisting of hydrazine. The method of claim 1,
The thioether-based compound is dilaurylthiodipropionate, ditridecylthiodipropionate, dimyristylthiodipropionate, dioctadecyldisulfide, bis[2-methyl-4-(3-n-) Dodecylthiopropionyloxy)-5-tert-butylphenyl]sulfide, pentaerythritol-tetrakis-(3-laurylthiopropionate), 1,4-cyclohexanedimethanol, 3,3'-thiobis A semiconducting resin composition for a cable, comprising at least one selected from the group consisting of propanoic acid dimethyl ester polymer and distearylthiodipropionate. The method of claim 1,
The metal stearate is a semiconducting resin composition for a cable, characterized in that it comprises zinc stearate, calcium stearate, aluminum stearate and magnesium stearate. The method of claim 1,
The polyolefin wax comprises polyethylene wax, polypropylene wax, polybutylene wax and modified polyolefin wax. The method of claim 1,
The crosslinking agent is 1,1-(tertbutylperoxy)-3,3,5-trimethylcyclohexane, n-butyl-4,4-(bis-butyl peroxy)valerate, dicumylperoxide (DCP) ), perbutyl peroxide, 1,1-bis(tertiary-butylperoxy)-diisopropylbenzene, benzoyl peroxide, 2,5-dimethyl-2,5-di-tert-butylperoxyhexane, tertiary-butylperoxybenzoate, di-tert-butylperoxide and 2,5-dimethyl-2,5-di-tertiary-butylperoxylhexane comprising at least one selected from the group consisting of A semi-conductive resin composition for cables. The method of claim 1,
The semiconducting resin composition has a processing pressure of 410 bar or less and a torque value of 265 Nm or less, and at the same time a volume resistance of 200 Ω·cm or less at 90°C. A cable having a semiconducting layer of a cable made of the semiconducting resin composition for a cable according to any one of claims 1 to 9.
.