KR20210080770A - Rotary target device for sputter and Sputter device having the same - Google Patents

Abstract

The present invention relates to a rotary target device for a sputter and a sputter device having the same. The rotary target device is installed on the sputter device having a vacuum chamber, a drum installed in the vacuum chamber to be able to rotate and revolving a substrate revolve along a certain path, and a plasma generator for generating plasma in a gap with the substrate. The rotary target device comprises: a pipe-type target disposed to be opposite to the drum to discharge a deposited material by action of plasma; a target support unit joined to the target to make the target float over the bottom of the vacuum chamber; and an angle adjustment unit for rotating the target support unit to dispose the target vertically, horizontally, or inclined at an acute angle as an angle between the target and the horizon. For the rotary target device for a sputter in accordance with the present invention, a target installed in the vacuum chamber can be rotated, thereby enabling the target to be turned vertically, horizontally, and diagonally in accordance with the size of a substrate to be worked and a target material to be discharged sufficiently for the size of the substrate. Therefore, there is little consumption of unnecessary energy.

Description

A rotary target device for sputtering and a sputter device having the target device {Rotary target device for sputter and Sputter device having the same}

The present invention relates to a sputtering apparatus, and more particularly, by rotating a target installed in a vacuum chamber according to the size of a substrate, a rotatable target apparatus for sputtering which can minimize consumption of the target, and a sputter having the target apparatus It's about the device.

As a lamination method for forming a thin film on the surface of an object to be processed including a glass substrate, PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), evaporation, and the like are known. Each of these lamination methods has advantages and disadvantages and is appropriately selected according to needs.

However, the CVD deposition method has disadvantages in that the deposition film is not uniform, it is difficult to reproduce characteristics, and requires a high temperature environment during deposition, so energy consumption is severe. In addition, although the evaporation method has a high deposition rate, the density or adhesion of the deposition film is somewhat inferior.

In contrast, the PVD deposition method proceeds in a vacuum chamber in which a vacuum is maintained, and argon (Ar), an inert gas, is injected into the chamber while maintaining a magnetic field on the surface of the target using a magnet, and cathode power is applied to the target. It includes a process of forming plasma by applying it.

The argon is ionized by plasma, and the ionized argon cations collide with the target at high speed to apply collision energy to the target, thereby causing atoms to be emitted from the target. The target material emitted from the surface of the target flies to the deposition object, for example, the substrate waiting in front of the target, and is deposited on the substrate.

For reference, if the colliding particles are positive ions, it is called cathodic sputtering, and most sputtering is cathodic sputtering. Cathode sputtering is widely used because positive ions are easily accelerated and are neutralized by electrons emitted from the target just before they collide with the target and collide with the neutral reactor target.

In addition, during the deposition process, a re-sputtering phenomenon may occur due to negative ions present in the plasma. The re-sputtering is a phenomenon in which negative ions inside the plasma strike the surface of the deposition target rather than the target, damage the deposition layer during film formation, and in some cases separate the deposition material from the deposition target again. Such re-sputtering can be solved by adjusting the arrangement of magnets arranged behind the target or the output magnetic force. This is because, when a magnetic field is applied to the generated plasma, the anions in the plasma receive the Lorentz force and the density distribution changes.

The target takes the form of a hollow pipe having a certain diameter, and is vertically fixed inside the vacuum chamber. The length of the target mostly corresponds to the height of the drum. That is, the height of the upper end of the target in a vertically erected state is similar to or higher than the height of the upper end of the drum.

One of the reasons for applying the long length of the target is that some of the sizes of the substrate take a long shape in the longitudinal direction. In order to deposit the surface of a long substrate in the longitudinal direction, it is preferable to use a target extending longer than the length of the substrate. If the length of the target is shorter than that of the substrate, for example, the target material may not reach the upper and lower portions of the substrate, resulting in poor thickness uniformity.

However, on the contrary, there is a case where the size of the substrate is very small compared to the length of the target. For example, if the height of the target is 1.5 m and the length of the substrate to be processed is only 20 cm, most of the target material emitted from the target is discarded. In order to generate a target material to be discarded, it is very inefficient to consume energy to form a plasma.

Domestic Patent Publication No. 10-1358820 (flat end-block for supporting a rotatable sputtering target)

The present invention was created to solve the above problems, and it is possible to rotate the target installed in the vacuum chamber, so that the target is rotated in a vertical, horizontal or diagonal direction according to the size of the substrate to be worked, and it is suitable for the size of the substrate An object of the present invention is to provide a rotatable target device for sputtering that consumes little unnecessary energy because it can output only a suitable target material, and a sputtering device having the target device.

The rotary target device for sputtering of the present invention as a means of solving the problems for achieving the above object is a vacuum chamber, a drum installed so as to be rotatable inside the vacuum chamber and revolving the substrate along a predetermined path, the above As installed in the sputtering apparatus provided with a plasma generating unit for forming plasma between the substrate and disposed opposite to the drum, a pipe-type target for dispensing a deposition material by the action of plasma; a target support unit coupled to the target and floating the target from the bottom of the vacuum chamber; An angle adjusting unit is included for rotating the target support unit to tilt the target so as to have an acute angle with respect to vertical, horizontal, or horizontal lines.

In addition, the target support unit; In a state in which the target is erected vertically, a rotating body having an upper holder portion accommodating the upper end of the target and a lower holder portion accommodating the lower end of the target, and installed in the upper holder portion or the lower holder portion, the target length of the target and a target position adjusting means for moving in a direction orthogonal to the direction.

In addition, the upper holder part has an accommodating space opened toward the lower holder part through the long hole-type open passage, and the lower holder part provides an accommodating space opened toward the upper holder part through the long hole-type open passage, and the upper holder part and a guide rail extending in a direction orthogonal to the longitudinal direction of the target is provided in the receiving space of the lower holder, and a sliding cap supported by the guide rail and slidable along the guard rail is provided at the upper end and lower end of the target. It is mounted, the target position adjusting means; It has a transfer unit that provides a transfer force to the sliding cap so that the sliding cap moves along the guide rail.

In addition, the sliding cap is formed with a female screw hole extending parallel to the guide rail, the transfer unit; and a lead screw passing through the female screw hole and transferring the sliding cap by rotating the shaft by an external force.

In addition, the two targets are mounted side by side on one rotating body, and the lead screw is provided with a first screw portion passing through the sliding cap of one target and a second screw portion passing through the sliding cap of the other target, The distance between the two targets is controlled by the axial rotation of the lead screw.

In addition, the angle adjustment unit; An electric shaft fixed to the rotation center of the rotating body and horizontally extended to the outside of the vacuum chamber, and an angle adjusting motor for rotating the electric shaft by a desired rotation angle from the outside of the vacuum chamber.

In addition, the sputtering apparatus of the present invention as a means for solving the problem for achieving the above object, the vacuum chamber; a drum installed rotatably inside the vacuum chamber and revolving the substrate along a predetermined path; a plasma generator for forming plasma between the substrate and the substrate; A pipe-type target disposed opposite the drum and discharging a deposition material by the action of plasma, a target support unit that is coupled to the target and floats the target from the bottom of the vacuum chamber, rotates the target support unit to vertically or horizontally or tilt the target It includes a target device having an angle adjusting unit for positioning.

In addition, the target support unit; In a state in which the target is erected vertically, a rotating body having an upper holder portion accommodating the upper end of the target and a lower holder portion accommodating the lower end of the target, and installed in the upper holder portion or the lower holder portion, the target length of the target and a target position adjusting means for moving in a direction orthogonal to the direction.

In addition, the upper holder part has an accommodating space opened toward the lower holder part through the long hole-type open passage, and the lower holder part provides an accommodating space opened toward the upper holder part through the long hole-type open passage, and the upper holder part and a guide rail extending in a direction orthogonal to the longitudinal direction of the target is provided in the receiving space of the lower holder, and a sliding cap supported by the guide rail and slidable along the guard rail is provided at the upper end and lower end of the target. It is mounted, the target position adjusting means; A feeding force is provided to the sliding cap so that the sliding cap moves along the guide rail.

In addition, the sliding cap is formed with a female screw hole extending parallel to the guide rail, the transfer unit; and a lead screw passing through the female screw hole and transferring the sliding cap by rotating the shaft by an external force.

In addition, the two targets are mounted side by side on one rotating body, and the lead screw is provided with a first screw portion passing through the sliding cap of one target and a second screw portion passing through the sliding cap of the other target, The distance between the two targets is controlled by the axial rotation of the lead screw.

In addition, the angle adjustment unit; An electric shaft fixed to the rotation center of the rotating body and horizontally extended to the outside of the vacuum chamber, and an angle adjusting motor for rotating the electric shaft by a desired rotation angle from the outside of the vacuum chamber.

The rotary target device for sputtering of the present invention made as described above is capable of rotation of a target installed in a vacuum chamber, and the target is turned in a vertical, horizontal or diagonal direction according to the size of the substrate to be worked, and the Since only the target material suitable for the size can be output, there is little unnecessary energy consumption.

1 and 2 are plan views for explaining the configuration of the sputtering device is installed with a rotary target device for sputtering according to an embodiment of the present invention.
3A and 3B are perspective views of the target support shown in FIG. 1 .
Figure 4 is a cross-sectional view for explaining the internal structure of the target support shown in Figure 3a.
5 and 6 are side views showing an example of use of a rotary target device for sputtering according to an embodiment of the present invention.
7A to 7C are diagrams illustrating another implementation example of the target support shown in FIG. 1 .

Hereinafter, one embodiment according to the present invention will be described in more detail with reference to the accompanying drawings.

The rotary target device of the present invention has a feature that, by rotating a target installed in a vacuum chamber as needed, only a deposition material suitable for the size of the substrate can be output, so that unnecessary energy is hardly consumed. Such a rotary target device is a sputter having a vacuum chamber, a drum that is rotatably installed inside the vacuum chamber and revolves around a substrate along a predetermined path, and a plasma generating unit that forms plasma between the substrate and the sputter. a pipe-type target installed in the apparatus, disposed opposite to the drum, for discharging a deposition material by the action of plasma; a target support unit coupled to the target and floating the target from the bottom of the vacuum chamber; By rotating the target support, it includes an angle adjusting unit for inclinedly positioning the target so as to have an acute angle between vertical, horizontal, or horizontal lines.

In addition, the sputtering apparatus of the present invention, a vacuum chamber; a drum installed rotatably inside the vacuum chamber and revolving the substrate along a predetermined path; a plasma generator for forming plasma between the substrate and the substrate; A pipe-type target disposed opposite the drum and discharging a deposition material by the action of plasma, a target support unit that is coupled to the target and floats the target from the bottom of the vacuum chamber, rotates the target support unit to vertically or horizontally or tilt the target It has a basic configuration of a target device having an angle adjusting unit for positioning.

1 and 2 are plan views for explaining the configuration of the sputtering device is installed with a rotary target device for sputtering according to an embodiment of the present invention. The structure of the rotary target device 30 and the sputtering device 10 will be simultaneously described with reference to the drawings.

As shown, the sputtering device 10 according to the present embodiment includes a vacuum chamber 12 , a drum 14 , a plasma generating unit 20 , and a rotary target device 30 .

The vacuum chamber 12 provides an internal space 12a in which a vacuum is maintained by two vacuum pumps 18 and rotatably accommodates the drum 14 . A motor (not shown) for driving the drum is provided under the vacuum chamber 12 for rotation of the drum.

The drum 14 has a board|substrate 16 in the peripheral part as an octagonal rotating body rotating at the speed of about 50 rpm - 60 rpm, for example. The substrate 16 is fixed to the outer circumferential surface of the drum 14 through an appropriate jig, and passes continuously in front of the rotary target device 30 and the plasma generator 20 according to the rotation of the drum. That is, it revolves along a predetermined path around the central axis of rotation of the drum 14 .

The plasma generating unit 20 serves to form and maintain plasma between the substrate 16 and an electrode (not shown) for emitting high-energy power applied from the outside to the inner space 12a, and the plasma. and a magnet (not shown) that maintains the range of The plasma generating unit 20 itself applies a general one.

On the other hand, two rotary target devices 30 are symmetrically disposed with respect to the drum 14 . The position of the rotary target device 30 may be changed as needed. The structure of the two rotary target devices 30 is the same.

The rotatable target device 30 includes two targets 100 , a target support unit 40 , and an angle adjustment unit, and is rotatably supported by the door 12b. The door 12b is for maintaining the target support part 40 , and when the door 12b is opened, the target support part 40 and the target 100 are exposed.

The target 100 is in the form of a pipe having a certain diameter, and as shown in FIG. 3 , two are arranged side by side. The target 100 is disposed opposite to the drum 14 and releases the deposition material by the action of plasma. The target 100 may include a silicon cathode and a titanium cathode.

For example, the target of the rotary target device 30 located on the left in the drawing of the drum 14 is a silicon cathode, and the target of the rotary target device 30 located on the right side is a titanium cathode. In this configuration, the left target 100 emits silicon atoms by colliding with argon ions accelerated by the plasma generating unit 20 in an argon gas atmosphere injected from the outside, and the right target 100 is accelerated argon ions. It collides with ions and releases titanium atoms. The released silicon atoms and titanium atoms are coated on the substrate as a deposition material.

The target support part 40 has the structure of FIGS. 3A, 3B and 4 .

The configuration of the target support unit 40 will be described with reference to FIGS. 3A, 3B and 4 .

The target support unit 40 floats the target from the bottom of the vacuum chamber while being coupled to the upper and lower ends of the two targets 100 spaced apart in parallel to each other. The reason for floating from the floor is to rotate the target 100 .

As shown, the target support unit 40 includes a rotating body 41 and a target position adjusting means.

The rotating body 41 is to support the target 100 with respect to each other so as to be able to move forward and backward with the door 12b facing back. The rotating body 41 has an upper holder part 42 for accommodating the upper end of the target, and a lower holder part 43 for accommodating the lower end of the target in a state in which the target 100 is erected vertically.

As shown in FIG. 4 , the upper holder part 42 provides an accommodating space 42a that is opened downward through the open passage 42e. The accommodation space (42a) is a space for receiving and supporting the upper end of the two targets (100), and the guide rail (42b) is embedded therein. The guide rail 42b is a straight member extending in the width direction of the rotating body, that is, in a direction orthogonal to the longitudinal direction of the target 100 . In addition, the open passage (42e) has a predetermined width and is a long hole extending in the extension direction of the guide rail (42b), and enables the target 100 to move forward and backward between each other.

In addition, the sliding cap (42c) is fixed to the upper end of each target (100). The sliding cap (42c) is slidably supported on the guide rail (42b) in a state coupled to the upper end of the target (100). A fixing groove 42d into which the upper end of the target 100 is fitted is provided inside the sliding cap 42c.

The sliding cap 42c slides in a state supported by the guide rail 42c when the target 100 moves in the direction of the arrow b or the opposite direction by a target position adjusting means to be described later.

In addition, the lower holder part 43 has a receiving space 43a opened upward through the long hole-type open passage 43e. The accommodating space 43a is a space for accommodating the lower end of the target 100, and the guide rail 43b is embedded therein. The guide rail 43b is a straight member parallel to the upper guide rail 42b described above, and supports the support slider 43c to be slidably movable. The open passage (43e) has a predetermined width and is a long hole extending in parallel with the guide rail (43b).

In addition, the support slider 43c is fitted to the lower end of the target 100 . The support slider 43c supports and supports the target 100 , and has a fixing groove 43d and a female screw portion 43f. The fixing groove 43d is a groove in which the lower end of the target 100 is fitted and fixed, and the female threaded portion 43f is a horizontal passage through which a lead screw 44 to be described later passes. A female screw thread (not shown) coupled to the lead screw 44 is formed on the inner circumferential surface of the female screw part 43f.

The target position adjusting means moves the support slider 43c so that the two targets 100 move in the direction of the arrow b to spread apart or move in the opposite direction to get closer, and includes a lead screw 44 and a crank arm 47 do. The lead screw 44 and the crank arm 47 serve as a transfer unit for implementing the forward and backward movement of the target 100 .

The lead screw 44 is a horizontally extended mechanical element, and has a first screw part 44a on the left side in the drawing, a second screw part 44b on the right side in the drawing, based on the central part, and a guide rail through the bearing 46 . It is supported so as to be rotatable in the upper part of (43b). The first screw portion 44a and the second screw portion 44b have opposite threads. For example, when the male screw of the first screw portion 44a is a right-hand screw, the second screw portion 44b is a left-hand screw.

The first screw portion 44a is coupled to the left support slider 43c in the drawing of FIG. 4 , and the second screw portion 44b is coupled to the right support slider 43c.

In addition, one end of the lead screw 44 extends in the lateral direction of the lower holder portion 43 and has a socket 45 at the extended end. The socket 45 has an insertion groove 45a as a portion receiving rotation torque provided from the outside. The insertion groove 45a is a groove into which the torque transmitting part 47a of the crank arm 47 is fitted. After the torque transmission part 47a is inserted into the insertion groove 45a, when the crank arm 47 is rotated, the lead screw 44 axially rotates and the target 100 moves forward and backward with respect to each other.

In some cases, other means for axially rotating the lead screw 44, for example, a servomotor may be applied.

On the other hand, the angle adjusting unit, for example, by rotating the target support unit 40 in the direction of arrow a in FIG. 7A or the opposite direction serves to position the target 100 vertically or horizontally, or inclinedly.

The angle adjustment unit includes an electric shaft 49 , an angle adjustment motor 51 , and a controller 53 . The electric shaft 49 is a member fixed to the rotation center of the rotation body 41 and horizontally extended to the outside of the door 12b, and transmits the rotational force of the angle control motor 51 to the rotation body 41 .

The angle adjusting motor 51 is fixed to the door 12b and operates under the control of the controller 53 to adjust the angle of the target 100 . For example, the target 100 may be maintained vertically as in FIG. 7A , horizontally as in the upper target 100 of FIG. 7B , or inclined as shown in FIG. 7C . Whether the target 100 is placed vertically, horizontally, or inclinedly is determined according to the size of the substrate 16 to be worked.

5 and 6 are diagrams illustrating an example of use of the rotary target device 30 for sputtering according to an embodiment of the present invention. 5 is a side view of the target support shown in FIG. 1 , and FIG. 6 is a side view of the target support shown in FIG. 2 .

5 is a state in which the target 100 is vertically positioned because the longitudinal length H of the substrate 16 fixed to the drum 14 is long. In addition, FIG. 6 is a state in which the vertical length H2 of the substrate 16 is short and the rotating body 41 is rotated by 90 degrees and positioned horizontally. For reference, when the longitudinal length of the substrate 16 is neither short nor long, the target 100 is inclined.

As shown in FIG. 6 , when the longitudinal length H2 of the substrate 16 is significantly shorter than the length of the target 100 , the target 100 is horizontally disposed. Even though the size of the substrate 16 is small, if the target 100 is placed vertically, the waste of the deposition material emitted from the target increases. In other words, only the deposition material emitted from the portion facing the substrate is used, and the deposition material generated from the lower portion is discarded without participating in the deposition. Unnecessary consumption of the expensive target 100 acts as a factor to increase the production cost.

7A to 7C are diagrams illustrating another implementation example of the target support unit 40 shown in FIG. 1 .

As shown, two target support parts 40 may be installed on the door 12b up and down. When the width W of the door 12b cannot be greatly expanded, the target support unit 40 is made small and can be applied as much as possible. The upper and lower target support units 40 are separately controlled through the controller 53 .

Figure 7a is a state in which the upper and lower two target support parts 40 are vertically arranged. Since the target 100 extends vertically, the substrate 16 of the size shown in FIG. 5 can be processed.

In addition, Figure 7b is a state in which the upper target support part 40 is horizontally, and the lower target support part 40 is positioned vertically. When processing the substrate 16 of a small size as shown in FIG. 6 , only the upper target 100 is rotated horizontally, and the lower target 100 is not used. Of course, if the substrate 16 is fixed to the underside of the drum 14, the lower target 100 must be turned horizontally.

In addition, Figure 7c shows the up and down target 100 is in a tilted state, and when a substrate of an intermediate size that is not significantly short compared to the length of the target 100 is fixed up and down on the drum 14, the target ( 100) tilted to operate.

As mentioned above, although the present invention has been described in detail through specific embodiments, the present invention is not limited to the above embodiments, and various modifications are possible by those of ordinary skill within the scope of the technical spirit of the present invention.

10: sputtering device 12: vacuum chamber 12a: inner space
12b: Door 14: Drum 16: Board
18: vacuum pump 20: plasma generating unit 30: rotary target device
40: target support part 41: rotating body 42: upper holder part
42a: accommodating space 42b: guide rail 42c: sliding cap
42d: fixed groove 42e: open passage 43: lower holder part
43a: accommodating space 43b: guide rail 43c: support slider
43d: fixed groove 43e: open passage 43f: female thread part
44: lead screw 44a: first screw 44b: second screw
45: socket 45a: insertion groove 46: bearing
47: crank arm 47a: torque transmission part 49: electric shaft
51: angle control motor 53: controller 100: target

Claims (12)

A vacuum chamber, a drum which is rotatably installed inside the vacuum chamber and revolves the substrate along a predetermined path, and a plasma generating unit for forming plasma between the substrate and the sputtering device.
a pipe-shaped target disposed opposite to the drum and discharging a deposition material by plasma action;
a target support unit coupled to the target and floating the target from the bottom of the vacuum chamber;
Rotating the target support unit, the target, vertical, horizontal, or rotation-type target device for sputter including an angle adjusting unit for inclined to have an acute angle between the horizontal and horizontal. According to claim 1,
The target support unit;
In a state in which the target is erected vertically, a rotating body having an upper holder portion accommodating the upper end of the target and a lower holder portion accommodating the lower end of the target;
A rotary target device for sputtering provided with the upper holder portion or the lower holder portion, the target position adjusting means for moving the target in a direction orthogonal to the longitudinal direction of the target. 3. The method of claim 2,
The upper holder part has an accommodating space opened in the direction of the lower holder part through the long hole type open passage,
The lower holder part provides an open receiving space in the direction of the upper holder part through the long hole type open passage,
A guide rail extending in a direction perpendicular to the longitudinal direction of the target is provided in the receiving space of the upper holder part and the lower holder part,
At the upper end and lower end of the target, a sliding cap supported by the guide rail and slidable along the guard rail is mounted,
The target position adjusting means;
A rotary target device for sputtering having a transfer unit that provides a transfer force to the sliding cap so that the sliding cap moves along a guide rail. 4. The method of claim 3,
A female screw hole extending parallel to the guide rail is formed in the sliding cap,
the transfer unit;
A rotary target device for sputtering including a lead screw penetrating the female screw hole and transferring the sliding cap by rotating the shaft by an external force. 5. The method of claim 4,
Two of the targets are mounted side by side on one rotating body,
In the lead screw,
A first screw portion passing through the sliding cap of one target and a second screw portion passing through the sliding cap of the other target are provided,
A rotary target device for sputtering in which the distance between the two targets is controlled by the axial rotation of the lead screw. 3. The method of claim 2,
the angle adjusting unit;
an electric shaft fixed to the rotational center of the rotating body and horizontally extended to the outside of the vacuum chamber;
A rotary target device for sputtering comprising an angle control motor for rotating the electric shaft by a desired rotation angle from the outside of the vacuum chamber. a vacuum chamber;
a drum installed rotatably inside the vacuum chamber and revolving the substrate along a predetermined path;
a plasma generator for forming plasma between the substrate and the substrate;
A pipe-type target disposed opposite the drum and discharging a deposition material by the action of plasma, a target support portion coupled to the target and floating the target from the bottom of the vacuum chamber, rotating the target support portion to vertically or horizontally or tilt the target A sputtering device comprising a target device having an angle adjusting unit for positioning. 8. The method of claim 7,
The target support unit;
In a state in which the target is erected vertically, a rotating body having an upper holder portion accommodating the upper end of the target and a lower holder portion accommodating the lower end of the target;
A sputtering device provided with the upper holder portion or the lower holder portion, and comprising a target position adjusting means for moving the target in a direction orthogonal to the longitudinal direction of the target. 9. The method of claim 8,
The upper holder part has an accommodating space opened in the direction of the lower holder part through the long hole type open passage,
The lower holder part provides an open receiving space in the direction of the upper holder part through the long hole type open passage,
A guide rail extending in a direction perpendicular to the longitudinal direction of the target is provided in the receiving space of the upper holder part and the lower holder part,
At the upper end and lower end of the target, a sliding cap supported by the guide rail and slidable along the guard rail is mounted,
The target position adjusting means;
A sputtering device having a transfer unit that provides a transfer force to the sliding cap so that the sliding cap moves along a guide rail. 10. The method of claim 9,
A female screw hole extending parallel to the guide rail is formed in the sliding cap,
the transfer unit;
and a lead screw penetrating the female screw hole and transferring the sliding cap by rotating the shaft by an external force. 11. The method of claim 10,
Two of the targets are mounted side by side on one rotating body,
In the lead screw,
A first screw portion passing through the sliding cap of one target and a second screw portion passing through the sliding cap of the other target are provided,
A sputtering device in which the distance between the two targets is controlled by the axial rotation of the lead screw. 9. The method of claim 8,
the angle adjusting unit;
an electric shaft fixed to the rotational center of the rotating body and horizontally extended to the outside of the vacuum chamber;
A sputtering device comprising an angle control motor for rotating the electric shaft by a desired rotation angle from the outside of the vacuum chamber.

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