KR20210062299A - Shower head unit and system for treating substrate with the shower head unit - Google Patents

Abstract

Provided are a shower head unit capable of preventing metal contamination by plasma generated in a process space by assembling a ceramic insert with a hole on a shower head, and a substrate processing system having the same. The substrate processing system includes: a housing; a shower head unit installed on an upper side of an inner portion of the housing and supplying a process gas for processing the substrate into the housing; a support unit installed on the lower side of the inner portion of the housing and including an electrostatic chuck on which a substrate is seated; and a plasma generating unit for generating plasma using the process gas to process the substrate. The shower head unit includes: a body; a plurality of gas injection holes formed in the body; and an insert inserted into the gas injection holes.

Description

Shower head unit and substrate processing system having the same {Shower head unit and system for treating substrate with the shower head unit}

The present invention relates to a substrate processing system and a shower head unit provided therein. More specifically, it relates to a substrate processing system for processing a substrate using plasma, and a shower head unit provided therein.

A semiconductor device can be manufactured by forming a predetermined pattern on a substrate. When forming a predetermined pattern on a substrate, a number of processes, such as a depositing process, a lithography process, and an etching process, may be continuously performed in a facility used in a semiconductor manufacturing process. .

Korean Patent Registration No. 10-1931742 (Announcement date: 2018.12.24.)

The cleaning process may be performed to remove residue remaining on the surface of the substrate after processing a substrate (eg, a wafer) when manufacturing a semiconductor device. This cleaning process may be performed in a plasma reaction chamber in a dry clean method after the etching process is performed.

However, when a shower head in the plasma reaction chamber is exposed to plasma, metal contamination may occur in a hole on the shower head.

The problem to be solved in the present invention is to provide a shower head unit capable of preventing metal contamination by plasma generated in a process space by assembling an insert made of ceramic in a hole on a shower head.

In addition, the problem to be solved in the present invention is to provide a substrate processing system having a shower head unit capable of preventing metal contamination by plasma generated in a process space by assembling an insert made of ceramic in a hole on the shower head. .

The problems of the present invention are not limited to the problems mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect (aspect) of the substrate processing system of the present invention for achieving the above object, the housing; A shower head unit installed on an upper side of the housing and supplying a process gas for processing a substrate into the housing; A support unit installed below the housing and having an electrostatic chuck on which the substrate is mounted; And a plasma generating unit generating plasma using the process gas to process the substrate, wherein the shower head unit comprises: a body; A plurality of gas injection holes formed in the body; And an insert inserted into the gas injection hole.

The insert may be formed of a material having corrosion resistance.

The insert may be formed of a ceramic material.

At least one hollow may be formed in the insert in the vertical direction.

The hollow may be formed to have a certain width, or may be narrower as it goes downward.

The insert may have an upper module wider than a lower module.

The substrate processing system may be to clean the interior of the housing including the substrate.

One aspect of the shower head unit of the present invention for achieving the above object is to be provided in an equipment for cleaning a substrate to introduce a process gas into the equipment, the body; A plurality of gas injection holes formed in the body; And an insert inserted into the gas injection hole.

Details of other embodiments are included in the detailed description and drawings.

1 is a cross-sectional view schematically showing the structure of a substrate processing system according to an embodiment of the present invention.
2 is a schematic cross-sectional view illustrating a structure of a substrate processing system according to another embodiment of the present invention.
3 is a perspective view of a shower head unit constituting a substrate processing system according to an embodiment of the present invention.
4 is a cross-sectional view of a shower head unit constituting a substrate processing system according to an embodiment of the present invention.
5 is an exemplary view for explaining various embodiments of a body constituting the shower head unit shown in FIG. 3.
6 is a first exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.
7 is a second exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.
FIG. 8 is a third exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments to be posted below, but may be implemented in a variety of different forms, and only these embodiments make the posting of the present invention complete, and common knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to the possessor, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same elements throughout the specification.

When an element or layer is referred to as “on” or “on” of another element or layer, it is possible to interpose another layer or other element in the middle as well as directly above the other element or layer. All inclusive. On the other hand, when a device is referred to as "directly on" or "directly on", it indicates that no other device or layer is interposed therebetween.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It may be used to easily describe the correlation between the device or components and other devices or components. Spatially relative terms should be understood as terms including different directions of the device during use or operation in addition to the directions shown in the drawings. For example, if an element shown in the figure is turned over, an element described as “below” or “beneath” another element may be placed “above” another element. Accordingly, the exemplary term “below” may include both directions below and above. The device may be oriented in other directions, and thus spatially relative terms may be interpreted according to the orientation.

Although the first, second, etc. are used to describe various elements, components and/or sections, of course, these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, it goes without saying that the first element, the first element, or the first section mentioned below may be a second element, a second element, or a second section within the technical scope of the present invention.

The terms used in the present specification are for describing exemplary embodiments and are not intended to limit the present invention. In this specification, the singular form also includes the plural form unless specifically stated in the phrase. As used herein, "comprises" and/or "comprising" refers to the presence of one or more other components, steps, actions and/or elements in which the recited component, step, operation and/or element is Or does not preclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used with meanings that can be commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not interpreted ideally or excessively unless explicitly defined specifically.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, identical or corresponding components are assigned the same reference numerals and overlapped Description will be omitted.

The present invention relates to a shower head unit for preventing contamination of a plurality of holes on a shower head by a dry cleaning process using plasma, and a substrate processing system including the same. In the present invention, in order to prevent contamination of the plurality of holes, an insert made of an etch-resistant material may be assembled on the plurality of holes. Hereinafter, the present invention will be described in detail with reference to the drawings and the like.

1 is a cross-sectional view schematically showing the structure of a substrate processing system according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing system 100 includes a housing 110, a support unit 120, a plasma generating unit 130, a shower head unit 140, and a first gas supply unit 150. ), a second gas supply unit 160, a wall liner unit 170, a baffle unit 180, and an upper module 190.

The substrate processing system 100 is a system that processes the inside of the substrate W (eg, wafer) and the housing 110 using a dry cleaning process in a vacuum environment. The substrate processing system 100 may process the inside of the substrate W and the housing 110 using, for example, a plasma process.

The housing 110 provides a space in which a plasma process is performed. The housing 110 may have an exhaust hole 111 in the lower portion thereof.

The exhaust hole 111 may be connected to the exhaust line 113 on which the pump 112 is mounted. The exhaust hole 111 may discharge reaction by-products generated during the plasma process and gas remaining in the housing 110 to the outside of the housing 110 through the exhaust line 113. In this case, the internal space of the housing 110 may be depressurized to a predetermined pressure.

The housing 110 may have an opening 114 formed on its sidewall. The opening 114 may function as a passage through which the substrate W enters and exits the housing 110. The opening 114 may be configured to be opened and closed by the door assembly 115.

The door assembly 115 may include an outer door 115a and a door driver 115b. The outer door 115a is provided on the outer wall of the housing 110. The outer door 115a may be moved in the vertical direction (ie, the third direction 30) through the door driver 115b. The door driver 115b may be operated using a motor, a hydraulic cylinder, a pneumatic cylinder, or the like.

The support unit 120 is installed in the inner lower region of the housing 110. The support unit 120 may support the substrate W using electrostatic force. However, this embodiment is not limited thereto. The support unit 120 may support the substrate W in various ways such as mechanical clamping, vacuum, or the like.

When supporting the substrate W using electrostatic force, the support unit 120 may include a base 121 and an electro-static chuck (ESC) 122.

The electrostatic chuck 122 supports the substrate W mounted thereon by using electrostatic force. The electrostatic chuck 122 may be made of a ceramic material, and may be coupled to the base 121 so as to be fixed on the base 121.

The electrostatic chuck 122 may be installed so as to be movable in the vertical direction (ie, the third direction 30) inside the housing 110 by using a driving member (not shown). When the electrostatic chuck 122 is formed to be movable in the vertical direction, it may be possible to position the substrate W in a region exhibiting a more uniform plasma distribution.

The ring assembly 123 is provided to surround the edge of the electrostatic chuck 122. The ring assembly 123 may be provided in a ring shape and may be configured to support an edge region of the substrate W. The ring assembly 123 may include a focus ring 123a and an insulating ring 123b.

The focus ring 123a is formed inside the insulating ring 123b and is provided to surround the electrostatic chuck 122. The focus ring 123a may be made of a silicon material, and may concentrate plasma onto the substrate W.

The insulating ring 123b is formed outside the focus ring 123a and is provided to surround the focus ring 123a. The insulating ring 123b may be made of a quartz material.

Meanwhile, the ring assembly 123 may further include an edge ring (not shown) formed in close contact with the edge of the focus ring 123a. The edge ring may be formed to prevent damage to the side surface of the electrostatic chuck 122 by plasma.

The first gas supply unit 150 supplies first gas to remove foreign substances remaining on the upper portion of the ring assembly 123 or on the edge of the electrostatic chuck 122. The first gas supply unit 150 may include a first gas supply source 151 and a first gas supply line 152.

The first gas supply source 151 may supply nitrogen gas (N2 gas) as the first gas. However, this embodiment is not limited thereto. The first gas supply source 151 may supply other gases, cleaning agents, and the like.

The first gas supply line 152 is provided between the electrostatic chuck 122 and the ring assembly 123. The first gas supply line 152 may be formed to be connected between the electrostatic chuck 122 and the focus ring 123a, for example.

Meanwhile, the first gas supply line 152 may be provided inside the focus ring 123a and may be formed to be bent so as to be connected between the electrostatic chuck 122 and the focus ring 123a.

The heating member 124 and the cooling member 125 are provided so that the substrate W can maintain the process temperature when the etching process is in progress inside the housing 110. The heating member 124 may be provided as a heating wire for this purpose, and the cooling member 125 may be provided as a cooling line through which a refrigerant flows for this purpose.

The heating member 124 and the cooling member 125 may be installed inside the support unit 120 to allow the substrate W to maintain a process temperature. For example, the heating member 124 may be installed inside the electrostatic chuck 122, and the cooling member 125 may be installed inside the base 121.

Meanwhile, the cooling member 125 may be supplied with a refrigerant using a chiller 126. The cooling device 126 may be installed outside the housing 110.

The plasma generation unit 130 generates plasma from gas remaining in the discharge space. Here, the discharge space refers to a space located above the support unit 120 among the inner spaces of the housing 110.

The plasma generation unit 130 may generate plasma in a discharge space inside the housing 110 using an Inductively Coupled Plasma (ICP) source. In this case, the plasma generating unit 130 may use an antenna unit 193 installed on the upper module 190 as an upper electrode, and use the electrostatic chuck 122 as a lower electrode.

However, this embodiment is not limited thereto. The plasma generating unit 130 may generate plasma in the discharge space inside the housing 110 by using a capacitively coupled plasma (CCP) source. In this case, the plasma generating unit 130 may use the shower head 140 as an upper electrode and use the electrostatic chuck 122 as a lower electrode, as shown in FIG. 2. 2 is a schematic cross-sectional view illustrating a structure of a substrate processing system according to another embodiment of the present invention.

This will be described with reference to FIG. 1 again.

The plasma generating unit 130 may include an upper electrode, a lower electrode, an upper power supply 131 and a lower power supply 133.

The upper power supply 131 applies power to the upper electrode, that is, the antenna unit 193. The upper power source 131 may be provided to control the characteristics of the plasma. The upper power source 131 may be provided to regulate ion bombardment energy, for example.

Although a single upper power supply 131 is shown in FIG. 1, a plurality of upper power sources 131 may be provided in this embodiment. When a plurality of upper power sources 131 are provided, the substrate processing system 100 may further include a first matching network (not shown) electrically connected to the plurality of upper power sources.

The first matching network may match frequency powers of different sizes input from respective upper power sources and apply them to the antenna unit 193.

Meanwhile, a first impedance matching circuit (not shown) may be provided on the first transmission line 132 connecting the upper power source 131 and the antenna unit 193 for the purpose of impedance matching.

The first impedance matching circuit may act as a lossless passive circuit so that electric energy is effectively (ie, maximum) transmitted from the upper power source 131 to the antenna unit 193.

The lower power source 133 applies power to the lower electrode, that is, the electrostatic chuck 122. The lower power source 133 may serve as a plasma source for generating plasma, or may serve to control characteristics of plasma together with the upper power source 131.

Although a single lower power supply 133 is shown in FIG. 1, a plurality of lower power supplies 133 may be provided in this embodiment, similar to the upper power supply 131. When a plurality of lower power sources 133 are provided, a second matching network (not shown) electrically connected to the plurality of lower power sources may be further included.

The second matching network may match frequency powers of different sizes input from respective lower power sources and apply them to the electrostatic chuck 122.

Meanwhile, a second impedance matching circuit (not shown) may be provided on the second transmission line 134 connecting the lower power source 133 and the electrostatic chuck 122 for the purpose of impedance matching.

Like the first impedance matching circuit, the second impedance matching circuit may act as a lossless passive circuit so that electric energy is effectively (ie, maximum) transmitted from the lower power source 133 to the electrostatic chuck 122.

The shower head unit 140 may be installed so as to face the electrostatic chuck 122 and the housing 110 vertically. The shower head unit 140 may have a plurality of gas feeding holes 141 to inject gas into the housing 110, and have a larger diameter than the electrostatic chuck 122. Can be provided.

The shower head unit 140 may include an insert 210 inserted into the gas injection hole 220 to prevent contamination of the gas injection hole 220 during a plasma process. A more detailed description of the shower head unit 140 will be described later.

Meanwhile, the shower head unit 140 may be made of a silicon material or a metal material.

The second gas supply unit 160 supplies a process gas (second gas) to the interior of the housing 110 through the shower head unit 140. The second gas supply unit 160 may include a second gas supply source 161 and a second gas supply line 162.

The second gas supply source 161 supplies a cleaning gas used to process the substrate W and the interior of the housing 110 as a process gas. The second gas supply source 161 may supply an etching gas used to process the substrate W as a process gas.

A single second gas supply source 161 may be provided to supply process gas to the shower head unit 140. However, this embodiment is not limited thereto. A plurality of second gas supply sources 161 may be provided to supply the process gas to the shower head unit 140.

The second gas supply line 162 connects the second gas supply source 161 and the shower head unit 140. The second gas supply line 162 transfers the process gas supplied through the second gas supply source 161 to the shower head unit 140 so that the process gas can be introduced into the housing 110.

On the other hand, when the shower head unit 140 is divided into a center zone, a middle zone, an edge zone, etc., the second gas supply unit 160 is the shower head unit 140 A gas distributor (not shown) and a gas distribution line (not shown) may be further included to supply the process gas to each region of the.

The gas distributor distributes the process gas supplied from the second gas supply source 161 to each area of the shower head unit 140. Such a gas distributor may be connected to the second gas supply source 161 through the second gas supply line 161.

The gas distribution line connects the gas distributor and each area of the shower head unit 140. The gas distribution line may transfer the process gas distributed by the gas distributor to each area of the shower head unit 140 through this.

The wall liner unit 170 is for protecting the inner surface of the housing 110 from arc discharge generated during a process gas excitation, impurities generated during a substrate processing process, and the like. The wall liner unit 170 may be provided in a cylindrical shape in which the upper and lower portions are respectively opened in the housing 110.

The wall liner unit 170 may be provided to be adjacent to the inner wall of the housing 110. The wall liner unit 170 may have a support ring 171 thereon. The support ring 171 is formed to protrude from the top of the wall liner unit 170 in an outward direction (that is, the first direction 10), and is placed on the top of the housing 110 to support the wall liner unit 170. have.

The baffle unit 180 serves to exhaust plasma process by-products and unreacted gases. The baffle unit 180 may be installed between the inner wall of the housing 110 and the support unit 120.

The baffle unit 180 may be provided in an annular ring shape, and may include a plurality of through holes penetrating in the vertical direction (ie, the third direction 30). The baffle unit 180 may control the flow of the process gas according to the number and shape of the through holes.

The upper module 190 is installed to cover the open upper part of the housing 110. The upper module 190 may include a window member 191, an antenna member 192, and an antenna unit 193.

The window member 191 is formed to cover the upper portion of the housing 110 in order to seal the inner space of the housing 110. The window member 191 may be provided in the shape of a plate (eg, a disk), and may be formed of an insulating material (eg, alumina (Al2O3)) as a material.

The window member 191 may be formed to include a dielectric window. The window member 191 may have a through hole through which the second gas supply line 162 is inserted, and the inside of the housing 110 In order to suppress the generation of particles when the plasma process is performed, a coating film may be formed on the surface thereof.

The antenna member 192 is installed above the window member 191, and a space having a predetermined size may be provided so that the antenna unit 193 may be disposed therein.

The antenna member 192 may be formed in a cylindrical shape with an open lower portion, and may be provided to have a diameter corresponding to the housing 110. The antenna member 192 may be provided to be detachable from the window member 191.

The antenna unit 193 functions as an upper electrode and is equipped with a coil provided to form a closed loop. The antenna unit 193 generates a magnetic field and an electric field in the housing 110 based on the power supplied from the upper power source 131, and flows into the housing 110 through the shower head unit 140. It functions to excite gas into plasma.

The antenna unit 193 may be equipped with a planar spiral coil. However, this embodiment is not limited thereto. The structure or size of the coil can be variously changed by those of ordinary skill in the art.

Next, the shower head unit 140 into which the insert 230 is inserted into the gas injection hole 220 will be described. As described above, the shower head unit 140 may prevent the gas injection hole 220 from being contaminated during the plasma process through the insert 230.

3 is a perspective view of a shower head unit constituting a substrate processing system according to an exemplary embodiment of the present invention, and FIG. 4 is a cross-sectional view of a shower head unit constituting the substrate processing system according to an exemplary embodiment.

3 and 4, the shower head unit 140 may include a body 210, a gas injection hole 220, and an insert 230.

The body 210 constitutes the body of the shower head unit 140. The body 210 may include a plurality of gas injection holes 220 formed to penetrate in the vertical direction (the third direction 30).

The body 210 may be formed in a cylindrical shape. However, this embodiment is not limited thereto. The body 210 may be formed in an elliptical column shape or a polygonal column shape.

The body 210 may be formed in the same shape as the housing 110. However, this embodiment is not limited thereto. The body 210 may be formed in a shape different from that of the housing 110.

The body 210 may include a shower plate 310, a lower plate 320, and an upper plate 330 as shown in FIG. 5. 5 is an exemplary view for explaining various embodiments of a body constituting the shower head unit shown in FIG. 3.

The shower plate 310 directly injects a process gas used to process the substrate W into the inner space of the housing 110. The shower plate 310 may be formed such that its bottom surface is exposed to the inner space of the housing 110 for this purpose.

The shower plate 310 may be divided into a center area 410, a middle area 420, an edge area 430, and the like. In this case, the plurality of gas injection holes 220 may be provided in the same number in each of the regions 410, 420, and 430, but different numbers may be provided.

The lower plate 320 is stacked and installed on the upper portion of the shower plate 310. The lower plate 320 may be formed in the same shape as the shower plate 310, and may include a plurality of gas injection holes 220 formed to penetrate in the vertical direction (the third direction 30 ).

The upper plate 330 is stacked and installed on the lower plate 320. The upper plate 330 may distribute and supply the process gas introduced from the outside to the plurality of gas injection holes 220 on the lower plate 320.

The upper plate 330 may include a cooling member 331 therein.

The cooling member 331 may be provided as a passage through which cooling water or cooling fluid flows in the upper plate 330, that is, a cooling passage. The cooling member 331 may prevent the shower plate 310 from being heated above a limit temperature.

This will be described with reference to FIGS. 3 and 4 again.

The gas injection hole 220 supplies process gas into the housing 110. In this embodiment, the substrate W and the interior of the housing 110 may be cleaned using a process gas supplied into the housing 110 through the gas injection hole 220.

The gas injection hole 220 may be formed through the body 210 in the vertical direction (the third direction 30). A plurality of gas injection holes 220 may be formed on the body 210.

The gas injection hole 220 may be formed to have a narrower width toward the third direction 30. However, this embodiment is not limited thereto. The gas injection hole 220 may be formed in a form in which the width increases toward the third direction 30, or may be formed in a form in which the width is constant.

The insert 230 is inserted into the gas injection hole 220. In this embodiment, contamination of the gas injection hole 220 during a plasma process may be prevented through the insert 230.

The gas flow path of the shower head unit 140 is divided into two channels. During the process of using a radical gas, the radical gas generated at the top meets the gas injected from the inner flow path hole in the mixing zone and is recombined, and the process zone (recombination) is performed through the gas injection hole 220. process zone).

When plasma is generated in the process zone without using a radical gas during the dry cleaning process, the body 210 of a metal material (for example, aluminum (Al) material) constituting the shower head unit 140 is etched to form a metal Contamination may occur. Although the entrance and exit of the gas injection hole 220 may be coated with Y2O3 (Yttrium Dioxide), etc., metal contamination may occur because the interior of the gas injection hole 220 is not uniformly coated.

In this embodiment, in order to solve this problem, the insert 230 is assembled in the gas injection hole 220, and the inside of the gas injection hole 220 is exposed to the plasma generated in the process space. Can be prevented.

The insert 230 may be formed of an etch-resistant (or plasma-resistant) material as a material to prevent the gas injection hole 220 from being contaminated by plasma. The insert 230 may be formed of, for example, a ceramic material, a quartz material, a silicon material, or the like.

The insert 230 may have a hollow 231 in order to introduce the process gas flowing into the gas injection hole 220 into the housing 110. At this time, the hollow 231 may be formed in a circular column shape having a cross section as shown in FIG. 6A. However, this embodiment is not limited thereto. The hollow 231 may be formed in a polygonal column shape with a polygonal cross-section as shown in (b) of FIG. 6, or may be formed in an elliptical column shape with an ellipse cross-section as shown in (c) of FIG. 6 Do. 6 is a first exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.

A single hollow 231 may be formed on the insert 230 as shown in (a) of FIG. 7 in order to introduce the process gas flowing into the gas injection hole 220 into the interior of the housing 110. have. However, this embodiment is not limited thereto. A plurality of hollows 231 may be formed on the insert 230 as shown in FIG. 7B. FIG. 7 is a second exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.

The hollow 231 may be formed in a shape having a constant width as shown in (a) of FIG. 8. However, this embodiment is not limited thereto. The hollow 231 is formed in a shape whose width becomes narrower toward the third direction 30 as shown in FIG. 8(b), or the third direction 30 as shown in FIG. 8(c) It can be formed in a form that widens the width as it goes. FIG. 8 is a third exemplary view for explaining various embodiments of inserts constituting the shower head unit shown in FIG. 3.

Meanwhile, as shown in FIG. 8, the insert 230 may have an upper module wider than that of the lower module. The insert 230 may be formed in, for example, a T-shape. However, this embodiment is not limited thereto. The insert 230 may be formed so that the upper module and the lower module have the same width.

The shower head unit 140 has been described above with reference to FIGS. 3 to 8. The shower head unit 140 is in the form of assembling an insert 230 made of a ceramic material in the gas injection hole 220. When RF is applied to the electrostatic chuck 122 to generate plasma in the process zone, the end of the gas injection hole 220 (that is, the lower surface of the body 210) is coated with Y2O3 so that metal contamination does not occur. An insert 230 made of a ceramic material is also inserted inside the spray hole 220 (ie, a through hole portion of the shower head unit 140 ), so that metal contamination due to etching of the body 210 may be prevented.

In summary, the present invention has the effect of preventing metal contamination due to plasma exposure by adding an insert 230 made of an etch-resistant material in the gas injection hole 220 of the shower head unit 140 in the dry cleaning process. You can get it.

Although the embodiments of the present invention have been described with reference to the above and the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can be implemented in other specific forms without changing the technical spirit or essential features of the present invention. You can understand that there is. Therefore, it should be understood that the embodiments described above are illustrative and non-limiting in all respects.

100: substrate processing system 110: housing
120: support unit 121: base
122: electrostatic chuck 130: plasma generating unit
140: shower head unit 150: first gas supply unit
160: second gas supply unit 170: wall liner unit
180: baffle unit 190: upper module
210: body 220: gas injection hole
230: insert 231: hollow

Claims (10)

housing;
A shower head unit installed on the upper side of the housing and supplying a process gas for processing a substrate into the housing;
A support unit installed below the housing and having an electrostatic chuck on which the substrate is mounted; And
And a plasma generation unit generating plasma using the process gas to process the substrate,
The shower head unit,
body;
A plurality of gas injection holes formed in the body; And
A substrate processing system comprising an insert inserted into the gas injection hole. The method of claim 1,
The insert is a substrate processing system formed of a material having corrosion resistance. The method of claim 2,
The insert is a substrate processing system formed of a ceramic material. The method of claim 1,
A substrate processing system in which at least one hollow is formed in the insert in an up-down direction. The method of claim 4,
The hollow is formed to have a certain width, or a substrate processing system whose width is narrowed toward a downward direction. The method of claim 1,
The insert is a substrate processing system in which an upper module is formed wider than a lower module. The method of claim 1,
The substrate processing system is to clean the interior of the housing including the substrate. It is provided in the equipment for cleaning the substrate and introduces the process gas into the equipment,
body;
A plurality of gas injection holes formed in the body; And
A shower head unit including an insert inserted into the gas injection hole. The method of claim 8,
The insert is a shower head unit formed of a material having corrosion resistance. The method of claim 8,
A shower head unit in which at least one hollow is formed in the insert in the vertical direction.

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