KR20210050729A - Substrate multistatage cleaning apparatus - Google Patents

Abstract

The present invention relates to a multi-step cleaning device of a substrate. In the provided multi-step cleaning device of a substrate, the surface of the substrate is first cleaned with a contact plate of a cleaning pad, steam is sprayed on the substrate to perform secondary cleaning in a non-contact manner, and thus micron-scale foreign substances and nano-scale foreign substances remaining on the substrate are removed without damaging the substrate.

Description

Substrate multi-stage cleaning device {SUBSTRATE MULTISTATAGE CLEANING APPARATUS}

The present invention relates to a substrate cleaning apparatus, and more specifically, to a large-area substrate in a state in which fine particles remain after a chemical mechanical polishing process is performed, while minimizing scratches, not only foreign substances in micron units but also foreign substances in nano units are completely It relates to a multi-stage cleaning apparatus of a substrate to be removed.

In general, in the process of manufacturing a display device, a process of cleaning a polished surface is performed after performing a polishing process on the surface of a substrate.

Particularly, as a part of the chemical used during the chemical mechanical polishing process of the substrate adheres, the surface of the substrate subjected to the chemical mechanical polishing process remains fine particles of 0.1 μm or less in addition to particles of 0.5 μm or more. . Nevertheless, the cleaning process of the substrate in the state in which the chemical mechanical polishing process has been performed is performed by a contact cleaning process in the form of a cleaning brush and a non-contact cleaning process in which residual foreign matters are removed by spraying a high-pressure cleaning liquid.

However, the cleaning process of the above method can remove particles of 0.5 μm or more, but cannot remove nano-scale particles of 0.1 μm or less, which has been a cause of lowering the precision of subsequent microprocessing.

More specifically, conventionally, after the chemical mechanical polishing process has been performed, the polishing surface of the substrate G is first cleaned using the substrate cleaning apparatus 9 shown in Fig. 1, and then the cleaning solution is sprayed at high pressure. It was done in a way that

First, in the substrate cleaning apparatus 9 of the contact method shown in FIG. 1, the substrate G is mounted on the substrate chuck 10, and a suction pressure is applied to the suction hole 10a of the substrate chuck 10 to In a state in which (G) is adsorbed and fixed, foreign matter adhered to or remaining on the surface of the substrate (G) is contact-cleaned by moving (20d) the roll-shaped cleaning brush (20) while rotating (20r). In general, the substrate G for a display device is a large-area substrate having a width and length of 1 m or more, so the substrate G is placed on the substrate chuck 10, and the substrate G after the cleaning process is completed is placed on the substrate chuck 10. The process of separating from) and transferring to the next process is very difficult, and this has a problem that damage to the substrate occurs during the transfer process of the substrate.

First of all, residues with high hardness such as slurry and abrasive particles remain on the surface of the substrate G on which the chemical mechanical polishing process has been performed, while rotating the roll-shaped cleaning brush 20 with respect to the substrate G When the surface of the substrate G is cleaned, the direction of the contact friction force Fx acting by the cleaning brush 20 at any position (X1, X2) of the substrate G is always constant. A serious problem has been caused in that residues are agglomerated on the surface or linear scratches 66 are generated.

In addition, as shown in FIG. 2A, the cleaning brush 20 in the roll form is in a state in which the cleaning liquid flows into the cleaning brush 20, and the cleaning brush 20 is wetted by the cleaning liquid and sagging occurs. In some cases, as shown in Fig. 2B, in the roll-shaped cleaning brush 20, as the cleaning liquid penetrates with deviation, irregular sagging in the axial direction may occur. For this reason, even if the cleaning brush 20 in which sagging has occurred is rotated in a downward movement (20y) to contact the substrate G, the surface of the substrate G does not evenly contact the cleaning brush 20 There is a problem in that the amount of cleaning is varied, and thus foreign matter remaining on the substrate is aggregated in a specific area.

On the other hand, as shown in Fig. 3, the substrate G is moved by the support roller 30 (xd) and is cleaned by the cleaning brushes 20 and 25 arranged on the upper and lower sides of the substrate G. The substrate cleaning apparatus 8 of has been proposed. However, this configuration also has a problem that residues agglomerate or scratches 66 are generated on a part of the surface of the substrate as the direction of the contact friction force Fx acting by the cleaning brush 20 always acts in a certain direction. there was.

On the other hand, when the contact cleaning process of the substrate is performed by the cleaning brush 20 as described above, after irradiating the substrate with a single or mixed fluid such as N2, CO2, and CDA with a fluid spray nozzle, finally, using CDA or N2. A drying process is carried out using the surface drying or Marangoni technique.

However, there is a limit that nano-scale fine particles remaining on the substrate in a state performed by the cleaning brush 20 are not separated from the surface of the substrate by a high-pressure spraying method.

An object of the present invention is to completely remove not only the foreign matter in the micron unit but also the foreign matter in the nano unit remaining on the surface of a substrate subjected to a chemical mechanical polishing process.

In addition, an object of the present invention is to suppress the occurrence of scratches during the contact cleaning process of the substrate by the cleaning pad.

In addition, an object of the present invention is to improve cleaning efficiency by cleaning while transferring a substrate.

In order to achieve the objects of the present invention described above, the present invention first cleans the surface of the substrate with the contact plate surface of the cleaning pad, and sprays steam onto the substrate to perform secondary cleaning in a non-contact manner, thereby removing foreign substances remaining on the substrate. A substrate cleaning apparatus to be removed is provided.

As described above, according to the present invention, it is possible to obtain an effect of completely removing micron-level foreign matter and nano-level foreign matter remaining on the surface of the substrate subjected to the chemical mechanical polishing process.

According to the present invention, it is possible to obtain an effect of preventing scratches caused by the cleaning pad by controlling the direction of the contact cleaning force of the cleaning pad unevenly during the contact cleaning process of the substrate.

Advantageous Effects of Invention According to the present invention, it is possible to obtain an effect of preventing scratches on the substrate by foreign substances of high hardness remaining on the substrate subjected to the chemical mechanical polishing process.

According to the present invention, it is possible to obtain an effect of increasing process efficiency by continuously performing a cleaning process on a substrate.

1 is a diagram showing the configuration of a conventional substrate cleaning apparatus.
2A and 2B are views showing a sagging configuration of the cleaning pad of FIG. 1;
3 is a diagram showing a configuration of another conventional substrate cleaning apparatus;
4 is a plan view showing the configuration of a substrate cleaning apparatus according to an embodiment of the present invention;
5 is a plan view showing the configuration of the first cleaning unit of FIG. 4;
6 is a cross-sectional view taken along the cutting line VI-VI of FIG. 5;
Figure 7 is a side view of Figure 6;
Fig. 7 is an enlarged view of part'A' of Fig. 4;
Fig. 8 is a diagram for explaining the cleaning principle of the cleaning pad of Fig. 4;
9 is an enlarged view of part'B' of FIG. 6;
Fig. 10A is a diagram showing a cleaning process of a cleaning pad by a pad cleaning unit;
Fig. 10B is a view showing the top surface of the cleaning plate of the pad cleaning unit of Fig. 10A;
11 and 12 are plan views showing the configuration of another type of first cleaning unit according to the present invention;
Fig. 13 is a diagram showing the configuration of the rinsing unit of Fig. 4;
Fig. 14 is a diagram showing the configuration of the second cleaning unit of Fig. 4;
15 is a diagram showing the configuration of the third cleaning unit of FIG. 4;
Fig. 16 is a longitudinal sectional view of the nozzle unit of Fig. 15;
Fig. 17 is an enlarged view of part'B' of Fig. 16;
Fig. 18 is an enlarged cross-sectional view taken along the cut line XX in Fig. 16;
Fig. 19 is a diagram showing the configuration of the drying unit of Fig. 4;

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and under these rules, contents described in other drawings may be cited, and contents that are determined to be obvious to those skilled in the art or repeated may be omitted.

As shown in the drawing, the substrate cleaning apparatus 1 according to the present invention includes a support 110 for transferring a substrate while supporting the bottom of the substrate G, a rinsing unit RU for rinsing the substrate G, and , When the substrate (G) reaches the first region (I), the first cleaning unit 100 for contact cleaning the substrate (G), and when the substrate (G) reaches the second region (II), the substrate (G) The second cleaning unit 200 for non-contact cleaning, the third cleaning unit 300 for non-contact cleaning of the substrate G when the substrate G reaches the third area IIII, and the substrate G It is configured to include a drying unit 400 for drying the substrate G when it reaches the fourth area (IV).

Here, each unit (RU, 100, 200, 300, 400) may be disposed in an open space, but according to a preferred embodiment of the present invention, it is installed in a chamber 66 that is sealed with outside air, and each chamber When passing through 66, the opening/closing shutter 67 is opened/closed 67d, whereby the substrate G can be transferred in one direction xd.

As shown in Figs. 5 to 6, the support unit 110 transfers the substrate G in a predetermined direction xd by a plurality of transfer rollers 112, and simultaneously supports the bottom surface of the substrate G. do. The support part 110 is formed to receive the substrate G and extend from the first region I to the fourth region IV to a position where the substrate G is discharged.

A plurality of transfer rollers 112 are uniformly distributed on the bottom surface of the substrate G, and an interval in the transfer direction is determined so that the amount of sagging of the substrate G is within an allowable range. At the same time, in order to drive the plurality of transfer rollers 112 to rotate, the transfer roller 112 is fixedly installed on the rotation shaft 114 arranged perpendicular to the transfer direction, and the rotation shaft 114 is rotated by the driving unit M1 ( 110r), the plurality of transfer rollers 112 transfer the substrate G while rotating at the same rotational speed.

While the substrate (G) is cleaned by the cleaning units (100, 200, 300) in each area, the transfer roller 112 may stop rotating, or be continuously rotated so that the substrate G is transferred and cleaned. May be. For the efficiency of the process, the first cleaning unit 100, the second cleaning unit 200, the third cleaning unit 300, and the drying unit 400 are preferably arranged in a straight line.

As shown in FIGS. 4 and 13, the rinsing unit RU receives and supplies rinse water from the rinse water supply unit RP when the substrate G is located in the rinse area RA. ), the rinsing water 71 is sprayed from the rinsing water spraying nozzle RA to remove large foreign matter remaining on the surface of the substrate G by pushing it out of the substrate G. To this end, it is preferable that the rinse water spray nozzle RA sprays a large amount of rinse water vertically or obliquely on the surface of the substrate G in the form of a jet.

The rinsing unit RU may be formed to have a length sufficient to accommodate the substrate G independently, but as shown in FIG. 4, the surface of the substrate G is transferred by the support unit 110. It is configured to supply the rinsing water 71 to, so that large foreign matters can be removed from the surface of the substrate G being transferred.

As shown in FIG. 4, the rinse unit RU is disposed before the substrate in the state in which the chemical mechanical polishing process in which the largest amount of large foreign matter remains is finished is supplied to the first cleaning unit 100, and the first cleaning unit is cleaned. It is disposed between the first region (I) and the second region (II) to remove micron-level foreign matter remaining on the substrate when the contact cleaning process is completed by the unit 100.

In addition, it may be disposed between and before and after the second cleaning unit 200 and the third cleaning unit 300 performing a non-contact cleaning process.

The first cleaning unit 100 contacts and cleans the plate surface of the substrate G in a state in which large foreign matters not adhered to the substrate G have been removed while passing through the rinsing unit RU. To this end, the first cleaning unit 100 includes a pad cleaner 120 in which the cleaning pad 122 is rotatably provided, and the substrate G during the process of cleaning the substrate G by the pad cleaner 120. The limiting member 130 for restraining the displacement of the pad cleaning machine 120, the guide bar 140 rotatably provided with the pad cleaning machine 120, and the cleaning pad 122 of the pad cleaning machine 120 in order to prepare a cleaning process for the substrate. And a pad cleaning unit 150 for cleaning the pad cleaning device 150, and a cleaning liquid supply unit 160 for supplying a cleaning liquid 99 between the cleaning pad 122 of the pad cleaning machine 120 and the substrate G.

Here, as shown in Fig. 6, the pad cleaner 120 includes a cleaning pad 122 for contacting and cleaning the surface of the substrate G supported by the support 110 while the contact plate surface 122s rotates. It includes a pad holder 124 for fixing the cleaning pad 122 with the contact plate surface 122s of 122 exposed to the lower portion, and a transmission shaft 126 for transmitting rotational driving force of the driving motor M2.

Here, as shown in the drawing, the cleaning pad 122 is formed of a sponge in the form of a disk and rotates while the plate surface 122s is in contact with the substrate G to contact and clean the substrate G. That is, when the drive motor M2 rotates, the pad holder 124 is rotated via the transmission shaft 126, and the cleaning pad 122 fixed to the pad holder 124 rotates 120r while the contact plate surface The substrate G is cleaned by the friction cleaning force of (122s).

The cleaning pad 122 is formed of a material having a low hardness compared to the substrate while being able to hold the cleaning liquid due to the formation of fine pores. Through this, the foreign matter can be removed from the substrate while the foreign matter is in close contact with the cleaning pad 122 during the cleaning process of the substrate, and the friction cleaning power can be more effectively applied to the substrate G because the cleaning liquid is contained. For example, the cleaning pad 122 may be formed of any one of polyvinyl alcohol (PVA) and polyurethane.

According to an embodiment of the present invention, the contact plate surface located on the bottom surface of the cleaning pad 122 may be formed as a flat surface, and a plurality of circular or polygonal protrusions (not shown) may protrude. Accordingly, while the contact plate surface 122s of the cleaning pad 122 is in contact cleaning with the substrate G, the protrusion of the cleaning pad 122 is pressed against the substrate G and has a height similar to the surrounding surface, while the substrate The pressing force for elastically pressing (G) increases, so that the efficiency of cleaning the substrate can be improved. In addition, as the protrusion of the cleaning pad 122 is pressed against the substrate G and depressed, a depressed portion that is depressed around the protrusion is formed to accommodate the foreign matter remaining on the substrate G, so that the surface of the substrate G It is possible to increase the efficiency of removing foreign substances from the.

The pad holder 124 may be easily replaced with a detachable/removable type by using a magnetic to fix the cleaning pad 122 or having a grip part that physically grips by pneumatic pressure.

The pad washer 120 is fixed to the guide bar 140, reciprocates the curved path together according to the reciprocating rotational motion 140d of the guide bar 140, and rotates by the drive motor M2, so that rotation by rotation The movement and the reciprocating movement by the guide bar 140 are performed in parallel. Although the configuration in which the guide bar 140 reciprocates and rotates is illustrated in the drawings, according to another embodiment of the present invention, the pad cleaner 120 may be configured to reciprocate a predetermined linear path.

The constraining members 130 are disposed on both sides of the substrate G transferred by the transfer roller 112 and restrain the displacement in which the substrate G is pushed and rotated or moved by friction with the cleaning pad 122. The gap (c) is set to exist between both sides of the substrate (G) and the constraining member 130 so that the transfer of the substrate (G) is performed smoothly, and the gap (c) is different depending on the side length of the substrate (G). It is decided. Preferably, the position of the constraining member 130 is determined by a gap (c) that makes the twisting rotation angle of the substrate (G) within 1 to 5 degrees. Accordingly, although not shown in the drawings, the constraining member 130 is preferably installed to be movable in the width direction of the substrate G (a direction perpendicular to the transfer direction).

Although the configuration in which the constraining members 130 are spaced apart from each other in a certain plate shape is illustrated in the drawing, in order to prevent the substrate from being separated due to friction with the cleaning pad 122 and the cleaning liquid 99 during the cleaning process, It may be formed of a plurality of guide rollers arranged to contact the side.

The guide bar 140 allows the pad cleaner 120 to move linearly or curvedly (120d) while the pad cleaner 120 is fixed. To this end, the guide bar 140 reciprocates the horizontal bar 142 extending in the horizontal direction, the guide column 144 serving as a hinge axis of the horizontal bar 142, and the guide column 144 by a predetermined angle. It includes a driving unit (M4) for driving to exercise. Accordingly, the pad holder 124 rotatably installed on the horizontal bar 142 performs a reciprocating rotational motion around the guide column 144 which is a hinge axis.

As shown in FIG. 7, when the guide column 144 reciprocates by the driving unit M4, the horizontal bar 142 performs a rotational movement 140d by a predetermined angle. In the drawing, the horizontal bar 142 reciprocates and the cleaning pad 122 installed therein reciprocates in an arc-shaped curved path. However, according to another embodiment of the present invention, the cleaning pad 122 is It may be configured to reciprocate a straight path.

At the same time, the pad cleaner 120 fixed to the horizontal bar 142 rotates the pad holder 124 by the driving unit M2. Accordingly, the cleaning pad 122 fixed to the pad cleaning machine 120 rotates 120r by the rotational driving force of the driving unit M2, while the reciprocating rotation of the horizontal bar 142 by the driving unit M4 The reciprocating movement (120d) is performed in parallel in an arc-shaped path. The friction cleaning power due to the rotation 120r of the cleaning pad 122 acts in the tangential direction of the cleaning pad 122, and the friction cleaning power due to the reciprocating rotational motion 140d of the cleaning pad 122 is the horizontal bar 142 Since it acts in the tangential direction of the rotation path of, the cleaning pad 122 exerts friction cleaning power in different directions depending on the position of the substrate G.

Specifically, as shown in Fig. 8, in the first position P1 of the substrate, the friction cleaning force Fd1 due to the rotation 120r of the cleaning pad 122 and the horizontal bar 142 of the cleaning pad 122 The resultant force F1 of the friction cleaning power Fr1 caused by the movement 120d acts as a friction cleaning power. And, at the second position P2 of the substrate, the friction cleaning power Fd2 due to the rotation 120r of the cleaning pad 122 and the friction cleaning power due to the movement 120d by the horizontal bar 142 of the cleaning pad 122 The resultant force (F2) of (Fr2) acts as a friction cleaning force. That is, the friction cleaning force F1 at the first position P1 of the cleaning pad 122 and the friction cleaning force F2 at the second position P2 act in different directions. As such, the cleaning pad 122 rotates itself (120r) and reciprocates in the form of an arc by the reciprocating rotational motion (140d) of the guide bar (140), and thus friction in different directions depending on the position of the substrate. An advantageous effect of suppressing the occurrence of scratches on the surface of the substrate by the cleaning pad 122 due to the action of the cleaning power can be obtained.

On the other hand, the pad cleaning unit 150 is installed in the pad cleaning area CZ located outside the substrate G and moves the cleaning pad 122 of the pad cleaning machine 120 to the pad cleaning area CZ. Wash. That is, as shown in the drawing, a plurality of cleaning pads 122 are provided, and a first cleaning pad, which is a part of the cleaning pads 122, is used in the cleaning process of the substrate G, and among the cleaning pads 122 The second cleaning pad, which is another part, is cleaned by the pad cleaning unit 150 to prepare a subsequent substrate cleaning process. In addition, when the second cleaning pad is used in the substrate cleaning process, the first cleaning pad is cleaned by the pad cleaning unit 150. Through this, as the substrate G is supplied, the first cleaning pad and the second cleaning pad alternately clean the substrate, so that an effect of continuously performing the cleaning process of the substrate can be obtained.

To this end, the pad cleaning unit 150 includes a cleaning plate 154 disposed opposite the cleaning pad 122 to be cleaned from the outside of the substrate and installed so as to be able to move up and down 150d by the driving unit M5, It includes a plurality of cleaning liquid spray nozzles 152 disposed on the cleaning plate 154 and spraying the cleaning liquid at high pressure.

On the other hand, the upper surface 150s of the cleaning plate 154 is provided with a number of striking protrusions 154a protruding upward compared to the flat surface 150s1, as shown in FIG. 10B. In addition, during the cleaning process of the cleaning pad 122, the vertical movement 150d by the driving unit M5 may be repeated to repeatedly strike the cleaning pad 122. Accordingly, foreign matters buried in the cleaning pad 122 are not only separated from the cleaning pad 122 by the high-pressure sprayed cleaning solution, but also the striking protrusions 154a protruding from the cleaning plate 154 are physically repeatedly struck. As a result, foreign matter remaining on the cleaning pad 122 can be more reliably separated and removed. In some cases, the cleaning plate 152 may be provided with a steam jet or an acoustic wave (ultrasonic) oscillator, and may be used to remove foreign substances accumulated on the cleaning pad 122.

Therefore, it is possible to more reliably remove foreign substances from the cleaning pad 122 in a short time, so that the cleaning pads installed on the first guide bar 1401 and the second guide bar 1402 are alternately used. The effect of increasing the process efficiency can be obtained by performing the cleaning process. 7 illustrates a configuration in which one pad washer 120 is provided for each of the first guide bar 1401 and the second guide bar 1402, but as shown in FIG. 11, another implementation of the present invention In the first cleaning unit 102 according to an example, a plurality of pad cleaners 120 may be installed on one guide bar 1401 and 1402 to further increase the cleaning efficiency of the substrate G.

On the other hand, the first cleaning unit 103 according to another embodiment of the present invention, as shown in Figure 12, the guide bar 340 may be configured to be arranged in the form of a closed curve. That is, the pad holder 124 holding the cleaning pad 122 can be independently moved along the guide bar 340 and is installed to be self-rotating. For example, the pad holder 124 is provided with a driving motor that rotates each of the pad holders 124, and the pad holders 124 independently each independently form a guide bar in the form of a closed curve by power applied to the coil under the principle of a linear motor together with the driving motor. It can be configured to be movable along the way. Thereby, the substrate cleaning process is performed by the plurality of cleaning pads 122, and the pad cleaning process by the pad cleaning unit 150 can be performed on the cleaning pad located in the outer region CZ of the substrate G. .

Meanwhile, the cleaning process of the cleaning pad 122 may be performed during the substrate cleaning process, or may be selectively performed before or after the substrate cleaning process. The pad cleaning unit 150 is disposed outside the substrate during the cleaning process of the substrate, and when the cleaning pad needs to be cleaned, the cleaning pad may be moved to the pad cleaning area CZ and cleaned. Although not shown in the drawing, the pad cleaning The unit 150 may be moved to a location where the cleaning pad 122 is located and cleaned.

The cleaning liquid supply unit 160 supplies the cleaning liquid 99 between the substrate G and the cleaning pad 122 during the cleaning process of the substrate G. The cleaning liquid 99 may be supplied from the outside of the cleaning pad 122, or the cleaning liquid 99 may be directly supplied to the contact plate surface of the cleaning pad 122. To this end, a supply flow path 124a for supplying the cleaning liquid to the cleaning pad 122 may be formed in the pad holder 124, and a supply flow path 122x for supplying the cleaning liquid to the cleaning pad may be formed. Although the configuration in which the supply flow path 122x is formed in the cleaning pad 122 is illustrated in the drawing, the supply flow path 124a is formed only in the pad holder 124 and the supply flow path may not be provided in the cleaning pad 122.

Accordingly, since the cleaning liquid 99 supplied from the cleaning liquid supply unit 160 is directly supplied between the cleaning pad 122 and the substrate G, the amount of cleaning liquid is not wasted and can be completely used for the cleaning process of the substrate G. I can. At the same time, when a plurality of cleaning pads clean the substrate, a cleaning pad that contacts the substrate through micropores of the cleaning pad 122 by supplying a cleaning solution such as ultrapure water or chemicals to the rear surface of the cleaning pad that is not in contact with the substrate. The fluid can be spread evenly over the entire surface of 122.

Here, the cleaning liquid supply unit 160 adjusts the supply pressure of the cleaning liquid supplied through the cleaning liquid supply passages 124a and 122x. Accordingly, when the supply pressure of the cleaning liquid increases, the gap h between the cleaning pad 122 and the substrate G can be increased, and when the supply pressure of the cleaning liquid decreases, the cleaning pad 122 and the substrate G The gap (h) of) can be reduced. Accordingly, it is possible to increase the cleaning effect of the substrate by using friction between the cleaning pad 122 and the substrate and the drag force of the fluid on the substrate by the rotational force of the brush.

Incidentally, when there is a large amount of foreign matter remaining on the supplied substrate G, the supply pressure of the cleaning solution supplied from the cleaning solution supply unit 160 is primarily increased, so that the gap between the substrate G and the cleaning pad 122 is increased. As (h) becomes sufficiently large, foreign matters are accommodated in the gap h, and foreign matters are accommodated in the depression 122y of the cleaning pad 122 while preventing scratches on the substrate G by the foreign matters. , Secondly, by gradually reducing the supply pressure of the cleaning liquid supplied from the cleaning liquid supply unit 160, a large foreign substance is accommodated in the depression 122y and small foreign substances remaining on the substrate G are removed. , It is also possible to obtain an effect of more efficiently removing foreign substances from the substrate while preventing scratches on the substrate.

As described above, in the present invention, while the large-area substrate (G) is supplied in one direction (xd), the large-area substrate is cleaned using the cleaning pad 122 having a microporous structure in the form of a disk, and is approximately 0.5 μm. It removes foreign matter in the micron unit. Particularly, while the substrate G moves in one direction, the disk-shaped cleaning pad 122 for cleaning the substrate G is rotated at high speed while repeatedly moving in a straight or curved path from one edge of the substrate to the opposite edge. By cleaning G), the friction cleaning forces F1 and F2 by the cleaning pad 122 act in different directions depending on the positions P1 and P2 of the substrate, and the cleaning pad 122 scratches the surface of the substrate. It is possible to obtain the effect of cleaning the substrate while suppressing the occurrence of

In addition, the cleaning pad 122 may also be provided with one or more fluid passages 122x to supply the cleaning liquid 99 between the substrate G and the cleaning pad 122. Accordingly, the gap between the pad and the substrate may be adjusted by adjusting the pressure and flow rate of the fluid supplied to the cleaning pad 122. That is, a non-contact method and a sponge in which the relative speed of the substrate G with respect to the cleaning pad 122, that is, the drag force caused by the rotational speed and movement speed of the cleaning pad, acts on the cleaning solution to clean foreign substances such as particles. The cleaning process of the substrate is performed in a contact method that cleans the surface of the substrate by the amount of physical impact between the particles.

The second cleaning unit 200, when the substrate G having the contact cleaning process completed by the first cleaning unit 100 is located in the second region (II), the high-temperature steam from the steam spray nozzle 201 By spraying (299), the nano-scale foreign matter attached to the substrate (G) is brought into a thermally suspended state.

In other words, when the high-temperature steam 299 is sprayed onto the substrate G, the air flowing into the gap between the nano-unit foreign material and the substrate G expands and separates the nano-unit foreign material from the substrate G. Acting as a force, the fine foreign matter becomes floating by heat.

To this end, steam 291 of 120°C or higher is supplied from the high-temperature steam supply unit 220 to the steam injection nozzle 201, and ultrapure water 292 of less than 100°C is supplied to the steam injection nozzle 201 from the pure water supply unit 230. While being supplied in a small amount, steam 299 having a high temperature of 100° C. or higher, which is a temperature equal to or higher than the boiling point of ultrapure water, is sprayed through the nozzle 201. For example, the supply amount of the ultrapure water 292 may be determined as 1/10 to 1/1000 of the volume of the steam 291 supplied from the high-temperature steam supply unit 200. At this time, the ultrapure water of less than 100°C is supplied and branched inside the nozzle, and one side may be generated by induction heating or electromagnetic waves inside the nozzle, and then mixed and sprayed inside the nozzle. As the steam spray nozzle 201, a plurality of nozzles or slit type nozzles suitable for the size of the substrate may be used.

In this way, as a trace amount of ultrapure water is mixed with the high-temperature steam, the ultrapure water is vaporized instantaneously and discharged in a high-temperature steam state, thereby increasing the heat capacity of the high-temperature steam 299, thereby increasing the heat capacity of the high-temperature steam 299. As heat is transferred, the nano-scale foreign material and the fine air filled between the substrate expand, and the nano-scale foreign material is surely separated from the substrate.

That is, by the high-temperature steam 299 as described above, foreign matters in micron units have a relatively large weight and are not sufficient to release the adhesion, and contact cleaning by the cleaning pad 122 having micropores formed therein. Since there is a limit to separating foreign matters in nano units, the present invention firstly removes foreign matters in micron units first by contact cleaning with the cleaning pad 122, and secondly, high-temperature steam 299. By spraying, nano-scale foreign substances are lifted into a thermally suspended state that separates them from the surface of the substrate (G).

The third cleaning unit 300 is for removing foreign substances in which nano-scale foreign substances have become thermally suspended from the substrate surface by being cleaned in the second cleaning unit 200, as shown in FIG. When the substrate G cleaned by the cleaning unit 200 is located in the third area (III), a mixed fluid (or airflow body) in which the cleaning solution and gas are mixed is sprayed to be in a thermally suspended state on the surface of the substrate (G). Nano-scale foreign substances are removed from the substrate (G).

To this end, the third cleaning unit 300 receives one or more of carbon dioxide, nitrogen, and compressed air from the gas supply unit 329 and supplies the cleaning solution 393 to the nozzle unit. Upon receiving, the mixed fluid 399 in which the liquid cleaning liquid and the gaseous state are mixed is discharged in a bubbled state in a tornado form, and foreign matters in a thermally suspended state with respect to the substrate G by the gas of the mixed fluid are removed from the substrate G. Remove it by pushing it out of the box.

More specifically, as shown in Figs. 16 to 18, the nozzle unit 301 supplies gas to the nozzle body 310 in which the mixing chamber 312 is formed and the mixing chamber 312 in a first direction. A liquid supply passage 330 having a gas supply passage 320 and a plurality of liquid supply passages 331 supplying liquid to the mixing chamber 312 in a second direction crossing the first direction, and a mixing chamber It communicates with 312 and includes a discharge passage 340 for discharging the mixed fluid mixed in the mixing chamber 312 to the outside of the nozzle body 310.

Here, the nozzle body 310 is formed to have a predetermined length, and a mixing chamber 312 in which different gases and liquids are mixed is provided inside the upper end of the nozzle body 310.

The gas supply passage 320 is a mixing chamber 312 to supply gas (eg, nitrogen) supplied from the gas supply unit 329 to the mixing chamber 312 in a first direction (the length direction of the nozzle body 310). ) Is formed to communicate with. Specifically, the gas supply passage 320 is formed along a direction perpendicular to the upper portion of the mixing chamber 312, and gas is supplied into the mixing chamber 312 from the top to the bottom.

The liquid supply passage 330 is provided to supply liquid (for example, DIW or cleaning liquid) to the mixing chamber 312 in a second direction crossing the first direction, and mixing in a second direction crossing the first direction It includes a plurality of liquid supply passages 331 for supplying the liquid to the chamber 312. Specifically, the plurality of liquid supply passages 331 are formed along a horizontal direction on the side of the mixing chamber 312, and fluid is supplied from the side to the center direction inside the mixing chamber 312. In some cases, a plurality of liquid supply passages may be formed in an inclined manner to supply fluid in an inclined manner to the interior of the mixing chamber.

Preferably, the plurality of liquid supply passages 331 are disposed to be spaced at equal intervals along the circumferential direction of the mixing chamber 312. Hereinafter, an example in which the six liquid supply passages 331 in the mixing chamber 312 are disposed at equal intervals along the circumferential direction of the mixing chamber 312 will be described. In some cases, the liquid supply passage may consist of 5 or less liquid supply passages, or may include 7 or more liquid supply passages.

The discharge passage 340 communicates with the mixing chamber 312 and is formed to discharge the mixed fluid mixed in the mixing chamber 312 to the outside of the nozzle body 310.

Specifically, the discharge passage 340 is formed along the longitudinal direction (first direction) of the nozzle body 310 under the mixing chamber 312, and the mixed fluid (gas + liquid) mixed in the mixing chamber 312 Is discharged to the outside of the nozzle body 310 along the discharge passage 340.

As described above, the present invention supplies gas to the mixing chamber 312 in a first direction, and supplies liquid at a plurality of points (a plurality of liquid supply passages) along a second direction crossing the first direction, Since the gas and the fluid can be mixed in a vortex form in the mixing chamber 312, an advantageous effect of increasing the uniformity of mixing the gas and the fluid in the mixing chamber 312 can be obtained. In other words, by ensuring that the liquid is uniformly supplied radially around the gas flow supplied in the vertical direction in the mixing chamber 312, the gas and the liquid are not mixed in the mixing chamber 312. It is possible to minimize the phenomenon of being shifted to the region, and an advantageous effect of more evenly mixing the gas and the fluid in the mixing chamber 312 may be obtained.

Preferably, the plurality of liquid supply passages 331 communicate with the liquid supply chamber 332, and the liquid is supplied to the plurality of liquid supply passages 331 through the liquid supply chamber 332. That is, the liquid supply chamber 332 is disposed around the mixing chamber 312 to have a ring shape, and the plurality of liquid supply passages 331 branch from the liquid supply chamber 332. At this time, a liquid supply hole 314 communicating with the liquid supply passage 330 is formed on the wall of the nozzle body 310, and the liquid supplied to the liquid supply hole 314 is first filled in the liquid supply chamber 332, and then , It is supplied to the interior of the mixing chamber 312 through a plurality of liquid supply passages 331.

In this way, the liquid supplied from the plurality of liquid supply passages 331 is supplied into the mixing chamber 312 through the plurality of liquid supply passages 331 after the liquid passes through the liquid supply chamber 332. By uniformly maintaining the supply pressure and supply amount of, it is possible to obtain an advantageous effect of more evenly mixing the gas and the liquid inside the mixing chamber 312.

Preferably, an insert receiving portion 310a is formed inside the nozzle body 310, a nozzle insert 350 is accommodated in the insert receiving portion 310a, and the mixing chamber 312 is in the nozzle insert 350, A gas supply passage 320 and a liquid supply passage 330 are formed.

In this way, by allowing the mixing chamber 312, the gas supply passage 320, and the liquid supply passage 330 to be formed through the nozzle insert 350 accommodated in the nozzle body 310, the nozzle It becomes easy to process the unit 301, and an advantageous effect of dispersing the pressure applied to the nozzle can be obtained. In some cases, it is also possible to directly form a mixing chamber, a gas supply passage, and a liquid supply passage in the nozzle body itself.

For example, the nozzle insert 350 includes a first insert member 352 having a gas supply passage 320 formed therein, a mixing chamber 312 formed therein, and a liquid supply passage 330 formed on the wall surface, and the first And a second insert member 354 disposed under the insert member 352. In some cases, it is also possible for the nozzle insert to be formed as a single member.

The first insert member 352 is formed in a cylindrical block shape, and is accommodated on the insert receiving portion 310a. The gas supply passage 320 formed in the first insert member 352 may include one or a plurality of gas supply passages 321, and the number of gas supply passages 321 constituting the gas supply passage 320 And the present invention is not limited or limited by the arrangement form.

It is formed in the shape of a hollow cylindrical block of the second insert member 354 and is received under the insert receiving portion 310a so as to be disposed under the first insert member 352. The inner space of the second insert member 354 forms the mixing chamber 312, and a plurality of liquid supply passages 331 are formed through the sidewall surface of the second insert member 354. In addition, the liquid supply chamber 332 is recessed in the form of a ring-shaped groove open on the outer wall surface of the second insert member 354, and as the second insert member 354 is accommodated in the insert receiving portion 310a. , The opening of the liquid supply chamber 332 is blocked by the inner wall surface of the insert receiving portion 310a.

Preferably, an extension insert portion disposed in the mixing chamber 312 protrudes below the first insert member 352, and gas is supplied into the mixing chamber 312 through the extension insert portion 352a. . For example, the outlet end of the extension insert may be disposed at an approximately intermediate height of the mixing chamber 312.

At this time, the liquid supply passage 331 formed on the side wall surface of the second insert member 354 is configured to supply the liquid into the mixing chamber 312 at a height higher than the outlet end of the extension insert part.

More preferably, an inclined guide surface 352b is formed on the outer surface of the lower end of the extension insert part 352a, and the liquid supplied along the liquid supply passage 330 is guided to the mixing chamber 312 along the inclined guide surface 352b. .

In this way, gas is supplied from an approximately intermediate height of the mixing chamber 312 through the extended insert portion 352a protruding into the mixing chamber 312, and the liquid supplied along the liquid supply passage 330 is Mixing between gas and liquid in the mixing chamber 312 while preventing reverse flow of the mixed fluid and lowering the flow rate by guiding the mixing chamber 312 along the inclined guide surface 352b in a downwardly inclined direction An advantageous effect of increasing the uniformity can be obtained.

The discharge passage 340 is formed to discharge the mixed fluid mixed in the mixing chamber 312 to the outside of the nozzle body 310, and communicates with the lower end of the mixing chamber 312 in the longitudinal direction of the nozzle body 310 Is formed along the line. Preferably, the discharge passage 340 is in communication with the first discharge passage 342 and the first discharge passage 342 in communication with the mixing chamber 312 and has an enlarged cross-sectional area than the first discharge passage 342. It includes a second discharge passage (344) to be formed.

In this way, after the mixed fluid (gas + liquid) mixed in the mixing chamber 312 passes through the first discharge passage 342, a cross-sectional area (eg, diameter) that is larger than the first discharge passage 342 is By allowing it to be discharged through the second discharge passage 344 having, an advantageous effect of uniformly inducing the drop size of the mixed fluid injected from the nozzle unit 301 can be obtained.

More preferably, the first discharge passage 342 is formed to have a smaller cross-sectional area than the mixing chamber 312, and the second discharge passage 344 is formed to have a smaller cross-sectional area than the mixing chamber 312. Therefore, the mixed fluid mixed in the mixing chamber 312 passes through the first discharge passage 342 having a reduced cross-sectional area than the mixing chamber 312, and then the second discharge passage extended than the first discharge passage 342 ( It is sprayed to the outside of the nozzle unit 301 through 344.

In this way, by reducing the cross-sectional area of the discharge passage through which the mixed fluid is discharged and then forming it in a wider shape (the first discharge passage → the second discharge passage), the particle uniformity (Relative Span Factor) of the injected mixed fluid can be increased. And, it is possible to obtain an advantageous effect of uniformly inducing a drop size. In particular, while the mixed fluid passes through passages having different cross-sectional areas (mixing chamber → first discharge passage → second discharge passage), the liquid distributed in the gas may be dispersed while volume and pressure change occurs. The particle uniformity of the mixed fluid can be increased, and an advantageous effect of uniformly inducing the particle size can be obtained.

The nozzle unit 301 includes a mixing induction part 360 forcibly inducing mixing of a liquid and a gas in the mixing chamber 312. Here, the mixing induction part 360 forcibly inducing the mixing of the liquid and the gas in the mixing chamber 312 means that the mixing induction part 360 is caused by at least one of a liquid and a gas in the mixing chamber 312. It is defined as forcibly forming a tornado flow.

In this way, by the mixing induction part 360 forming a forcible vortex in the mixing chamber 312, the liquid supplied to the mixing chamber 312 does not flow down along the wall surface of the mixing chamber 312. , By allowing it to be distributed (mixed) in the gas, it is possible to obtain an advantageous effect of further increasing the mixing uniformity of the gas and the liquid.

The mixing induction part 360 may be formed in various structures capable of forcibly forming a tornado flow in the mixing chamber 312. For example, the mixing induction part 360 includes at least one of a protrusion 362 formed on the inner wall surface of the mixing chamber 312 and a depression 364 formed on the inner wall surface of the mixing chamber 312. . Preferably, the protrusions 362 and the depressions 364 are repeatedly formed on the inner circumferential surface of the mixing chamber 312 so as to form a waveform continuously along the circumferential direction of the mixing chamber 312.

More specifically, the protrusion 362 and the depression 364 are alternately formed on the inner wall surface of the mixing chamber 312 formed inside the second insert member 354 along the circumferential direction of the second insert member 354. It is formed to form a sunflower. Preferably, the plurality of protrusions 362 are formed in the same shape and size with each other, and the plurality of depressions 364 are formed in the same shape and size with each other. In some cases, it is possible to form a plurality of protrusions in different shapes and sizes, and to form a plurality of depressions in different shapes and sizes.

At this time, the liquid supply passage 331 for supplying the liquid to the mixing chamber 312 is formed to pass through the protrusion 362. In some cases, it is also possible to form the liquid supply passage so as to penetrate the recessed portion rather than the protruding portion.

In this way, by forming the protrusion 362 and the depression 364 on the inner wall surface of the mixing chamber 312, the gas and liquid supplied into the mixing chamber 312 are the protrusion 362 and the depression 364 Since the vortex can be forcibly formed while being bounced off irregularly through the mixing chamber 312, an advantageous effect of increasing the uniformity of mixing the gas and the liquid in the mixing chamber 312 can be obtained.

That is, when the inner wall surface of the mixing chamber 312 is smooth, even if the liquid is supplied through the plurality of liquid supply passages 331, it is difficult to completely mix the gas and the liquid, so that the liquid that is not sufficiently mixed with the gas is mixed in the mixing chamber ( 312) and a phenomenon of flowing down along the inner wall surface of the discharge passage 340 may occur. However, in the present invention, by forming the protrusion 362 and the depression 364 on the inner wall surface of the mixing chamber 312, it is possible to forcibly induce a vortex in the mixing chamber 312, so that the liquid flows down. Thermal suspension remaining on the surface of the substrate G by sufficiently mixing and discharging (spraying) the liquid on the gas without (a phenomenon in which the liquid flows down the inner wall of the mixing chamber 312 and the discharge passage 340) The nano-scale foreign matter in the state can be reliably removed by the air flow in the form of a tornado.

The drying unit 400, as shown in Fig. 19, when the substrate G, which has been cleaned by the third cleaning unit 300, is located in the fourth area IV, the slit of the drying nozzle 401 By spraying air 499 with a pressure higher than atmospheric pressure from the discharge port of the shape on the surface of the substrate in a straight line to form an air knife, the liquid substance remaining on the substrate is pushed out as indicated by reference numeral 95. Dry the substrate.

That is, in the substrate cleaning apparatus 1 according to the present invention, unlike the semiconductor substrate, the display device substrate G has a large square size and can apply the rotation of the substrate itself like a semiconductor due to the size constraints of the process equipment. Because it is not possible, the process proceeds by dividing the section while continuously moving in the form of a straight line.

Since the substrate G for a display device is an information display type element using light, it is necessary to strictly limit the occurrence of scratches in the contact method cleaning, and preferably to clean it in a non-contact method. Accordingly, the present invention suppresses the occurrence of scratches by rotating the disk-shaped cleaning pad 122 and performing a reciprocating movement in a linear or curved shape at the same time, while reducing the gap h between the cleaning pad 122 and the substrate as a cleaning solution supply pressure. By adjusting, the cleaning effect can be further increased by the drag force of the cleaning liquid, and scratches can be minimized by adjusting the gap according to the size distribution of the foreign matter.

In addition, in the cleaning process of the display device substrate (G), a relatively large foreign matter in micron units is first removed by first supplying ultrapure water or chemicals and cleaning with a cleaning pad 122, and then high-temperature steam is secondarily sprayed. In a state where nano-scale foreign substances are separated from the substrate surface and thermally suspended, the nano-unit foreign substances are removed thirdly by using a mixed fluid of ultrapure water and CO2 or N2, and CDA, and finally, a drying step is performed using an air knife. . Here, a separate rinsing nozzle RU for rinsing the substrate may be provided in the middle of each cleaning process, particularly before/after the process of using a chemical, and a rinsing step using ultrapure water or an aqua knife may be performed. In addition, cleaning solutions such as chemicals used in each step can be applied in various ways depending on the material of the film to be cleaned formed on the substrate.

That is, in the first cleaning process by the first cleaning unit 100, chemically adsorbed on the surface to be cleaned, remaining inside the pattern, or relatively large remaining particles are prevented from physical friction between the cleaning liquid (chemical) and/or the cleaning pad 122. It is removed while separating it from the surface to be cleaned, and in the second cleaning process by the second cleaning unit 200, particles that have been physically adsorbed or relatively small remaining particles on the surface to be cleaned are removed in a thermally suspended state, and the third cleaning unit 300 In the third cleaning step by, thermally suspended fine particles are removed, and the substrate is finally dried by the drying unit 400.

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify and modify the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. You will understand that you can change it.

100: substrate cleaning device 100: first cleaning unit
110: support 120: unit washing machine
122: cleaning pad 124: pad holder
130: constraining member 140: guide bar
150: pad cleaning unit 160: cleaning liquid supply unit
200: second cleaning unit 300: third cleaning unit
400: drying unit

Claims (12)

A first cleaning unit for contact cleaning the substrate with a contact plate surface of the rotating cleaning pad;
A second cleaning unit for non-contact cleaning by spraying steam on the substrate contact-cleaned by the first cleaning unit;
A multi-stage cleaning apparatus for a substrate comprising a.
The method of claim 1,
The transfer unit includes a transfer roller for transferring the substrate in one direction, and the first cleaning unit and the second cleaning unit clean the substrate while the substrate is transferred.
The method of claim 2,
And the transfer unit further includes a limiting member in the first area to prevent separation of the substrate.
The method of claim 1, wherein the first cleaning unit,
The cleaning pad is a multi-stage cleaning apparatus for a substrate, characterized in that the linear or curved movement while rotating.
The method of claim 1, wherein the first cleaning unit,
A multi-stage cleaning apparatus for a substrate, wherein an outlet of a cleaning liquid supply passage for supplying a cleaning liquid between the substrate and the cleaning pad is formed on a plate surface of the cleaning pad.
The method of claim 1, wherein the second cleaning unit,
A multi-stage cleaning apparatus for a substrate, characterized in that spraying steam having a temperature equal to or higher than the boiling point of pure water.
The method of claim 1,
The steam is a multi-stage cleaning apparatus for a substrate, characterized in that the mixture of pure water (DIW) of less than 100 ℃ and steam of 120 ℃ or more.
The method according to any one of claims 1 to 7,
The substrate is a multi-stage cleaning apparatus for a substrate, characterized in that the substrate has been subjected to a chemical mechanical polishing process.
The method of claim 8,
The first cleaning unit cleans the substrate when the substrate reaches the first area, and the second cleaning unit cleans the substrate when the substrate reaches the second area. .
The method of claim 9,
A third cleaning unit for cleaning the substrate by spraying an air-fluid mixture of a cleaning liquid and a high-pressure gas when the substrate cleaned by the second cleaning unit is located in a third area;
A multi-stage cleaning apparatus for a substrate, characterized in that it is configured to further include.
The method of claim 10,
A drying unit for drying the substrate by injecting air from a slit-shaped discharge port at a pressure higher than atmospheric pressure to the surface of the substrate in a straight line when the substrate is located in the fourth region and moving relative to the substrate;
A multi-stage cleaning apparatus for a substrate, characterized in that it further comprises.
The method of claim 11,
The first region, the second region, the third region, and the fourth region are continuously arranged in a straight line.

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