KR20210050507A - Organic light emitting display device and manufacturing method thereof - Google Patents

Abstract

An example of the present invention provides a display device which comprises: a pixel defining film disposed on the substrate and defining a pixel area; a pixel electrode disposed in the pixel area; and an auxiliary wire spaced apart from the pixel electrode and disposed on the same layer as the pixel electrode. The pixel defining film includes: a pixel defining unit defining a pixel area; and a spacer protruding from the pixel defining unit. The auxiliary wire provides the display device that does not overlap the spacer. Therefore, the display device increases visibility.

Description

Organic light emitting display device and its manufacturing method {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF}

The present invention relates to an organic light emitting display device including a pixel defining layer having spacers and a method of manufacturing the same.

An organic light emitting diode display is a display device that displays an image using an organic light emitting diode (OLED). The organic light emitting device has a hole injection electrode and an electron injection electrode, and excitons generated by combining the holes supplied from the hole injection electrode and the electrons supplied from the electron injection electrode inside the light emitting layer fall from the excited state to the ground state. The organic light-emitting device emits light by the energy generated during this time.

Such an organic light emitting display device has a self-luminous characteristic, and unlike a liquid crystal display device, since it does not require a separate light source, thickness and weight can be reduced. In addition, the organic light emitting display device is drawing attention as a next-generation display device because it exhibits high quality characteristics such as low power consumption, high luminance, and high response speed.

However, electrodes and wires arranged in the organic light emitting display device reflect light introduced from the outside. Due to such reflection of external light, the OLED display is difficult to represent an accurate black color and has a low contrast, so that display characteristics are deteriorated.

In order to solve the above problems, the present invention is to provide an organic light emitting display device having improved visibility by suppressing reflection of external light.

In addition, the present invention is to provide a method of manufacturing the organic light emitting display device.

An example of the present invention is a substrate; A pixel defining layer disposed on the substrate and defining a pixel region; A pixel electrode disposed in the pixel region; An emission layer disposed on the pixel electrode;

A common electrode disposed on the emission layer; And an auxiliary wiring spaced apart from the pixel electrode and disposed on the same layer as the pixel electrode, wherein the pixel definition layer includes a pixel definition portion defining a pixel area and a spacer protruding from the pixel definition portion, wherein the The auxiliary wiring provides a display device that does not overlap with the spacer.

In one example of the present invention, the auxiliary wiring is an initialization voltage wiring.

In one example of the present invention, the pixel electrode and the auxiliary wiring are made of the same material.

In one example of the present invention, the auxiliary wiring includes at least one metal layer and at least one transparent conductive oxide layer.

In one example of the present invention, the auxiliary wiring includes a metal layer disposed on a substrate and a transparent conductive oxide layer disposed on the metal layer.

In one example of the present invention, a sealing member disposed opposite to the substrate with the pixel definition layer interposed therebetween is further included, wherein the spacer of the pixel definition layer maintains a gap between the substrate and the sealing member.

In one example of the present invention, the pixel defining portion and the spacer are made of the same material.

In one example of the present invention, the spacer has a shape of any one of a pyramid, a pyramid, a cone, a cylinder, a hemisphere, and a hemisphere.

In one example of the present invention, the auxiliary wiring overlaps the pixel defining unit.

An example of the present invention includes the steps of forming a pixel electrode and an auxiliary wiring on a substrate; Forming a photosensitive material layer on the pixel electrode and auxiliary wiring; Patterning the photosensitive material layer to form a pixel defining layer having a pixel area such that a portion of the pixel electrode is exposed; Forming a light emitting layer on the pixel electrode; And forming a common electrode on the emission layer, wherein the pixel definition layer includes a pixel definition portion defining a pixel region and a spacer protruding from the pixel definition portion, wherein the auxiliary wiring overlaps the spacer It provides a method of manufacturing a display device that does not work.

In one example of the present invention, the step of forming the pixel defining layer uses a mask having a light blocking pattern.

In one example of the present invention, halftone exposure is performed in the step of forming the pixel defining layer.

In one example of the present invention, the method further includes disposing a sealing member facing the substrate with the pixel definition layer interposed therebetween, wherein the spacer of the pixel definition layer maintains a gap between the substrate and the sealing member.

In one example of the present invention, the spacer is formed in the shape of any one of a pyramid, a pyramid, a cone, a cylinder, a hemisphere, and a hemisphere.

In an example of the present invention, the forming of the pixel electrode and the auxiliary wiring may include forming a conductive material layer including at least one metal layer and at least one transparent conductive oxide layer on a substrate; And patterning the conductive material layer.

In one example of the present invention, the auxiliary wiring overlaps the pixel defining unit.

The organic light emitting display device according to an exemplary embodiment of the present invention has a spacer provided in the pixel definition layer and an auxiliary wiring disposed on the same layer as the pixel electrode, and the auxiliary wiring is disposed so as not to overlap with the spacer. Accordingly, reflection of external light from the auxiliary wiring is reduced, and the visibility of the organic light emitting display device is improved. In addition, another embodiment of the present invention provides a method of manufacturing such an organic light emitting display device.

1 is a layout diagram of an organic light emitting display device according to a first exemplary embodiment of the present invention.
2 is a cross-sectional view taken along line II′ of FIG. 1.
3 is a schematic diagram of a path of external light incident on an auxiliary wiring.
4A is a plan view of an organic light emitting display device according to a second embodiment of the present invention, and FIG. 4B is a plan view of an organic light emitting display device according to a comparative example.
5 is a graph comparing reflectance of the organic light emitting display device of FIGS. 4A and 4B.
6 is a layout diagram of an organic light emitting display device according to a third exemplary embodiment of the present invention.
7A to 7D are cross-sectional views sequentially illustrating a manufacturing process of the organic light emitting display device of FIG. 1.

Hereinafter, the present invention will be described in detail with reference to the embodiments disclosed in the drawings. However, the scope of the present invention is not limited by the drawings or examples described below.

The accompanying drawings are selected by way of example to describe the present invention. In order to aid understanding of the invention, each component and its shape are drawn briefly or exaggeratedly in the drawings, and components in an actual product are not represented and omitted. Therefore, the drawings should be interpreted to aid understanding of the invention. Meanwhile, elements that play the same role in the drawings are indicated by the same reference numerals.

Throughout the specification, when a part is said to be "connected" with another part, this includes not only "directly connected" but also "electrically connected" with another element interposed therebetween. . In addition, when a part "includes" a certain component, it means that other components may be further included rather than excluding other components unless specifically stated to the contrary.

In addition, when it is described that a layer or component is "on" another layer or component, not only when the layer or component is placed in direct contact with the other layer or component, but also between This means that it includes all of the cases where the third layer is interposed and arranged.

Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 and 2.

1 and 2, the organic light emitting display device 100 according to the first embodiment of the present invention includes a switching thin film transistor 10, a driving thin film transistor 20, a power storage device 80, and an organic light emitting diode. It has a plurality of pixels including organic light emitting diodes (OLEDs) 201 and 202. Here, the pixel refers to a minimum unit for displaying an image, and the organic light emitting display device displays an image through a plurality of pixels.

Further, it is shown in the accompanying drawings that two thin film transistors (TFTs) and one capacitor are disposed in one pixel, but the first embodiment of the present invention is not limited thereto. Accordingly, the organic light emitting display device may include three or more thin film transistors and two or more power storage elements in one pixel, and may have various structures including separate wirings.

In addition, the organic light emitting display device 100 includes a gate line 151 disposed on the substrate 110, a data line 171 and a common power line 172 insulatedly crossing the gate line 151. One pixel region may be defined as a boundary between the gate line 151, the data line 171, and the common power line 172, but the pixel region is not limited to the above definition. The pixel area may be defined by a black matrix or a pixel defining layer.

First, the substrate 110 is made of an insulating material made of glass, quartz, ceramic, plastic, or the like. However, the first embodiment of the present invention is not limited thereto. Accordingly, the substrate 110 may be made of a metallic material such as stainless steel.

A buffer layer 120 is disposed on the substrate 110. The buffer layer 120 serves to prevent penetration of impurity elements and to planarize the surface, and may be formed of various materials capable of performing such a role. For example, the buffer layer 120 may be made of any one of a silicon nitride (SiNx) layer, a silicon oxide (SiO2) layer, and a silicon oxynitride (SiOxNy) layer. However, the buffer layer 120 is not necessarily required, and may be omitted depending on the type of the substrate 110 and processing conditions.

A switching semiconductor layer 131 and a driving semiconductor layer 132 are formed on the buffer layer 120. The switching semiconductor layer 131 and the driving semiconductor layer 132 may be formed of a polycrystalline silicon film, an amorphous silicon film, or an oxide semiconductor.

A gate insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiO _{2) is disposed on the switching semiconductor layer 131 and the driving semiconductor layer 132.} A gate wiring including a driving gate electrode 155 is disposed on the gate insulating layer 140. The gate wiring further includes a gate line 151, a first capacitor plate 158, and other wirings. In addition, the switching gate electrode 152 is disposed to overlap at least a portion of the switching semiconductor layer 131, and the driving gate electrode 155 is disposed to overlap at least a portion of the driving semiconductor layer 132.

An interlayer insulating layer 160 covering the driving gate electrode 155 is disposed on the gate insulating layer 140. The gate insulating layer 140 and the interlayer insulating layer 160 together have through-holes exposing the source and drain regions of the switching semiconductor layer 131 and the driving semiconductor layer 132. Like the gate insulating film 140, the interlayer insulating film 160 is formed of silicon nitride (SiNx) or silicon oxide (SiO ₂ ).

A data line including a switching source electrode 173, a switching drain electrode 174, a driving source electrode 176, and a driving drain electrode 177 is disposed on the interlayer insulating layer 160. The data wiring further includes a data line 171, a common power line 172, a second power storage plate 178, and other wirings. In addition, the switching source electrode 173, the switching drain electrode 174, the driving source electrode 176, and the driving drain electrode 177 are respectively source and drain regions of the switching semiconductor layer 131 and the driving semiconductor layer 132. Connected.

As such, the switching thin film transistor 10 includes a switching semiconductor layer 131, a switching gate electrode 152, a switching source electrode 173, and a switching drain electrode 174, and the driving thin film transistor 20 is a driving semiconductor. A layer 132, a driving gate electrode 155, a driving source electrode 176, and a driving drain electrode 177 are included. The configurations of the thin film transistors 10 and 20 are not limited to the above-described examples, and can be variously modified into known configurations that can be easily implemented by experts in the art.

In addition, the power storage device 80 includes a first power storage plate 158 and a second power storage plate 178 disposed with an interlayer insulating layer 160 therebetween.

The switching thin film transistor 10 is used as a switching element for selecting a pixel to emit light. The switching gate electrode 152 is connected to the gate line 151. The switching source electrode 173 is connected to the data line 171. The switching drain electrode 174 is spaced apart from the switching source electrode 173 and is connected to the first power storage plate 158.

The driving thin film transistor 20 applies driving power to the pixel electrodes 211 and 212 to emit light of the emission layers 221 and 222 of the organic light emitting devices 201 and 202 in the selected pixel. The driving gate electrode 155 is connected to the first capacitor plate 158. The driving source electrode 176 and the second capacitor plate 178 are respectively connected to a common power line 172. The driving drain electrode 177 is connected to the pixel electrodes 211 and 212 of the organic light emitting diodes 201 and 202 through the contact hole 182.

With such a structure, the switching thin film transistor 10 serves to transmit the data voltage applied to the data line 171 to the driving thin film transistor 20 by operating by the gate voltage applied to the gate line 151. . A voltage corresponding to the difference between the common voltage applied from the common power line 172 to the driving thin film transistor 20 and the data voltage transferred from the switching thin film transistor 10 is stored in the power storage element 80, and the power storage element 80 A current corresponding to the voltage stored in) flows to the organic light emitting devices 201 and 202 through the driving thin film transistor 20 so that the organic light emitting devices 201 and 202 emit light.

A planarization layer 180 is disposed on the interlayer insulating layer 160 to cover the data lines 171, 172, 173, 174 176, 177, 178. The planarization layer 180 serves to eliminate and planarize steps in order to increase the luminous efficiency of the organic light emitting devices 201 and 202 to be formed thereon.

In addition, the planarization layer 180 has a contact hole 182 exposing a portion of the drain electrode 177.

The planarization film 180 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamides resin, a polyimide resin, an unsaturated polyester resin. (unsaturated polyesters resin), polyphenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene (benzocyclobutene, BCB).

Pixel electrodes 211 and 212 of the organic light emitting devices 201 and 202 are disposed on the planarization layer 180. The pixel electrodes 211 and 212 are connected to the drain electrode 177 through the contact hole 182 of the planarization layer 180. The pixel electrodes 211 and 212 may be formed of any one of a transmissive type, a transflective type, and a reflective type.

Transparent conductive oxide (TCO) may be used to form the transmissive electrode. As a transparent conductive oxide (TCO), there are Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), ZnO (zinc oxide), _{Indium Oxide (In 2} O ₃ ), and the like.

For the formation of transflective and reflective electrodes, such as magnesium (Mg), silver (Ag), gold (Au), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al), and copper (Cu). Metals or alloys thereof may be used. At this time, the semi-transmissive electrode and the reflective electrode are determined by the thickness. In general, the transflective electrode has a thickness of about 200 nm or less, and the reflective electrode has a thickness of 300 nm or more. As the thickness of the semi-transmissive electrode decreases, the transmittance of light increases, but the resistance increases, and as the thickness increases, the transmittance of light decreases.

In addition, the transflective and reflective electrodes may have a multilayer structure including a metal layer made of a metal or an alloy of metal and a transparent conductive oxide layer stacked on the metal layer.

Depending on the type of material forming the pixel electrodes 211 and 212 and the common electrode 230, the organic light emitting display device 100 may be a top emission type, a bottom emission type, or a double-sided emission type. The organic light emitting display device 100 according to the first embodiment of the present invention is a top emission type. Accordingly, the organic light emitting devices 201 and 202 emit light toward the common electrode 230 to display an image.

In the case of a top emission type organic light emitting display device, the pixel electrodes 211 and 212 may be formed as reflective electrodes in order to improve the efficiency in which light generated from the organic light emitting elements 201 and 202 is emitted to the outside. . As an example of such a reflective electrode, there is an electrode in which a transparent conductive oxide made of ITO is laminated on a metal layer made of silver (Ag). In addition, an electrode having a triple-layer structure in which silver (Ag)-ITO-silver (Ag) is sequentially stacked may be used.

The organic light emitting display device 100 according to the first exemplary embodiment of the present invention includes an auxiliary wiring 410 disposed on the planarization layer 180 to be spaced apart from the pixel electrodes 211 and 212.

The auxiliary wiring 410 may be, for example, an initialization voltage wiring Vint. The initialization voltage wiring provides an initialization voltage for initializing the driving thin film transistor 20. The initialization voltage wiring may be used for the organic light emitting devices 201 and 202 to emit electric charges or to have the same potential after being driven. Although not shown in the drawing, the organic light emitting devices 201 and 202 and the auxiliary wiring 410 may be connected by a thin film transistor. However, in the first embodiment of the present invention, the auxiliary wiring 410 is not limited to the initialization voltage wiring Vint, and may be another wiring. The auxiliary wiring 410 may be a signal wiring or a bypass wiring through which a leakage current flows.

The auxiliary wiring 410 is disposed on the same layer 211 and 212 as the pixel electrode. The auxiliary wiring 410 may be manufactured by the same process as that of the pixel electrodes 211 and 212, may be made of the same material as the pixel electrodes 211 and 212, and may have the same stacked structure. That is, the pixel electrodes 211 and 212 and the auxiliary wiring may be formed at once. Accordingly, the auxiliary wiring 410 may also include at least one metal layer and at least one transparent conductive oxide layer. That is, the auxiliary wiring 410 may include a metal layer disposed on the planarization layer 180 on the substrate 110 and a transparent conductive oxide layer disposed on the metal layer.

Also, a pixel defining layer 190 is formed on the planarization layer 180. The pixel defining layer 190 has a pixel defining portion 191 defining a pixel region by exposing the pixel electrodes 211 and 212, and protruding from the pixel defining portion 191 in a direction opposite to the planarization layer 180. It includes a plurality of spacers 195. In this case, the pixel electrodes 211 and 212 are disposed to correspond to the openings that are the pixel regions of the pixel defining unit 191.

Specifically, the pixel defining layer 190 may be made of a resin such as polyacrylates resin and polyimides.

The pixel defining portion 191 and the spacer 195 of the pixel defining layer 190 are integrally formed using a photosensitive material through a photolithography process. That is, the pixel defining part 191 and the spacer 195 may be made of the same material. Specifically, the pixel defining portion 191 and the spacer 195 are formed together by adjusting the exposure amount through a halftone exposure process. However, the first embodiment of the present invention is not limited thereto. Accordingly, the pixel defining portion 191 and the spacer 195 may be formed sequentially or separately, and may be made of different materials.

The spacer 195 is formed on the spaced space between the pixel electrodes 211 and 212 and may have a shape of any one of a pyramid, a pyramid, a cone, a cylinder, a hemisphere, and a hemisphere.

By the way, in the first embodiment of the present invention, as the pixel electrodes 211 and 212 are formed as reflective electrodes, the auxiliary wiring 410 is also formed as a reflective electrode, and therefore, external light reflection occurs in the auxiliary wiring 410 as well.

Accordingly, reflection of external light by the auxiliary wiring 410 will be described with reference to FIG. 3.

A pixel defining layer 190 is disposed on the auxiliary wiring 410 as well as the planarization layer 180 except for the pixel regions in which the pixel electrodes 211 and 212 are located. In this case, when the pixel defining layer 190 disposed on the auxiliary wiring 410 is flat, the external light L1 incident on the auxiliary electrode 410 will exhibit a general reflected light L2. Accordingly, when a polarizing plate for blocking external light is disposed on the pixel defining layer 190, the external light L1 will be blocked by the polarizing plate.

However, as shown on the right side of FIG. 3, when an inclined surface by the spacer 195 is present on the upper portion of the auxiliary wiring 410, even the external light L3 incident to the front is refracted in the process of passing through the inclined surface. As a result, the light L4 reflected from the auxiliary wiring 410 has a different path from the incident light L3. In this case, even if the polarizing plate 310 is disposed, it is difficult to cause destructive interference between the reflected light L4 and the incident light L3.

In addition, the polarization state of the external light L3 passing through the inclined surface is changed. Specifically, when the polarizing plate 310 having circular polarization characteristics is disposed on the pixel defining layer 190, the auxiliary wiring 410 is reached by passing through the inclined surface of the pixel defining layer 190 through the polarizing plate 310. One external light L3 is reflected in an elliptically polarized state. The elliptically polarized light L4 is not properly destructively interfered with the circularly polarized incident light L3.

In this way, when the spacer 195 is disposed on the reflective auxiliary wiring 410, reflected light that is not destructively interfered increases, and thus the visibility of the organic light emitting display device 100 is deteriorated.

On the other hand, although the patterned spacer 195 is shown in FIG. 2, a reflow phenomenon of the material for forming the pixel definition layer 190 occurs during the thermal curing process after the formation of the pixel definition layer 190, and thus, the pixel definition layer 190 is formed. The shape of the spacer 195 of the film 190 may be distorted. Accordingly, the path of external light and the change in polarization on the inclined surface of the spacer 195 may be increased.

Accordingly, in order to prevent external light incident on the inclined surface of the spacer 195 from being reflected from the auxiliary wiring 410, the spacer 195 of the pixel defining layer 190 according to the first exemplary embodiment of the present invention is provided with an auxiliary wiring ( 410) does not overlap. That is, the spacer 195 is not disposed on the auxiliary wiring 410.

Emission layers 221 and 222 are disposed on the pixel electrodes 211 and 212 within the opening of the pixel definition unit 191, and the common electrode 230 is disposed on the pixel defining layer 190 and the emission layers 221 and 222. Is placed.

The emission layers 221 and 222 are made of a low-molecular organic material or a high-molecular organic material. At least one of a hole-injection layer (HIL) and a hole transporting layer (HTL) may be further disposed on the pixel electrodes 211 and 212 and the emission layers 221 and 222. In addition, at least one of an electron transporting layer (ETL) and an electron-injection layer (EIL) may be further disposed between the emission layers 221 and 222 and the common electrode 230.

The common electrode 230 is formed of a semi-transmissive layer. The semi-permeable film used as the common electrode 230 is made of one or more metals of magnesium (Mg), silver (Ag), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al), and copper (Cu). Can be formed. The common electrode 230 is a metal layer including at least one of magnesium (Mg), silver (Ag), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al), and copper (Cu), and the metal It may have a multilayer structure including a transparent conductive oxide (TCO) layer stacked on the layer.

As described above, the organic light emitting devices 201 and 202 include the pixel electrodes 211 and 212, the emission layers 221 and 222 disposed on the pixel electrodes 211 and 212, and the emission layers 221 and 222. And a common electrode 230. Here, the pixel electrodes 211 and 212 are positive electrodes (anodes) that are hole injection electrodes, and the common electrode 230 is a negative electrode (cathode) that is an electron injection electrode. However, the first embodiment of the present invention is not necessarily limited thereto, and the pixel electrodes 211 and 212 may be cathodes and the common electrode 230 may be anodes according to the driving method of the organic light emitting display device 100. .

In addition, the organic light emitting display device 100 further includes a pixel defining layer 190 and a sealing member 250 as shown in FIG. 2.

The sealing member 250 is interposed between the organic light emitting devices 201 and 202 and bonded and sealed with the substrate 110. The sealing member 250 covers and protects the thin film transistors 10 and 20 and the organic light emitting devices 201 and 202 formed on the substrate 110 so as to be sealed from the outside. An insulating substrate made of a material such as glass or plastic may be used as the sealing member 250.

The spacer 195 of the pixel defining layer 190 serves to maintain a gap between the substrate 110 and the sealing member 250.

In addition, a polarizing plate may be disposed on the sealing member 250.

4A and 4B are layout views of an organic light-emitting display device for comparing reflectance according to the position of the spacer 195. Only the pixel electrodes 211 and 212, the emission layers 221 and 222, the spacers 195, and the auxiliary wiring 410 are shown in FIGS. 4A and 4B. Specifically, FIG. 4A is a plan view of an organic light emitting display device 200 according to a second embodiment of the present invention, and FIG. 4B is a plan view of an organic light emitting display device according to a comparative example.

Other configurations of the organic light emitting display device 200 of FIGS. 4A and 4 are the same except for the positions of the spacers 195. That is, the spacer 195 of FIG. 4A does not overlap the auxiliary wiring 410, and the spacer 195 of FIG. 4B overlaps the auxiliary wiring 410.

5 is a graph comparing reflectance of the organic light emitting display device of FIGS. 4A and 4B. Here, specular component excluded (SCE) reflectance was measured. SCE reflectance is obtained by measuring only diffuse reflection, excluding regular reflected light. Even when a person recognizes an object, the SCE reflectance was measured because it recognizes only diffuse reflections excluding regular reflected light.

After measuring the reflectance a plurality of times using the organic light emitting display device of FIGS. 4A and 4B, the distribution of reflectance values is displayed in the graph of FIG. 5. Referring to FIG. 5, the average reflectance of the organic light emitting display device A of FIG. 4A is 0.61%, and the reflectance of the organic light emitting display device B of FIG. 4B is 0.65% (B). As described above, it can be seen that compared to the organic light-emitting display device according to the comparative example (B), the organic light-emitting display device according to the second embodiment (A) of the present invention has a reflectance reduced to 6.15%.

6 is a layout view of an organic light emitting display device 300 according to a third exemplary embodiment of the present invention. In the organic light emitting display device 300 of FIG. 6, unlike the organic light emitting display devices 100 and 200 of FIG. 4B, the spacer 195 does not overlap the auxiliary wiring 410.

Hereinafter, a method of manufacturing the organic light emitting display device 100 according to the first embodiment of the present invention will be described with reference to FIGS. 7A to 7D.

As shown in FIG. 7A, a thin film transistor 20 and pixel electrodes 211 and 212 connected to the power storage element 80 and the drain electrode 177 of the thin film transistor 20 are formed on the substrate 110. . In this case, the auxiliary wiring 410 is disposed between the pixel electrodes 211 and 212. The auxiliary wiring 410 is disposed on the same layer as the pixel electrodes 211 and 212. That is, the pixel electrodes 211 and 212 and the auxiliary wiring 410 are disposed on the planarization layer 180.

Forming the pixel electrodes 211 and 212 and the auxiliary wiring 410 includes forming a conductive material layer including at least one metal layer and at least one transparent conductive oxide layer on the planarization layer 180 on the substrate 110 And patterning the conductive material layer. The step of patterning the conductive material layer may be performed by a photolithography process.

Then, a photosensitive material is applied on the pixel electrodes 211 and 212 and the auxiliary wiring 410 to form a photosensitive material layer 199, and a photolithography process is performed using the mask 800 (FIG. 7B).

The mask 800 includes a mask substrate 810 and a light blocking pattern 820 formed on the mask substrate 810. In addition, the photolithography process includes half-tone exposure in which a mask 800 having a slit pattern is used. The exposed portion of the photosensitive material layer 199 is removed in the developing process, and the unexposed portion remains after the developing process. In this case, an exposed portion may remain and an unexposed portion may be removed depending on the type of the photosensitive material layer 199.

In this case, the light shielding pattern 820 is formed so that the spacer 195 is not formed on the auxiliary wiring 410 and the spacer 195 is formed on a region where the auxiliary wiring 410 is not disposed. Only the pixel defining unit 195 is disposed on the auxiliary wiring 410.

Next, as shown in FIG. 7C, the pixel defining layer 190 including the pixel defining portion 191 and the spacer 195 is formed through a developing process. In addition, curing is performed after development so that the pixel defining layer 190 becomes a stable layer. Heat may be applied to the pixel definition layer 190 for curing, and light may be irradiated in some cases. During the thermal curing process, a part of the material forming the pixel defining layer may flow down, so that the spacer 195 may have a gentle slope.

Next, as shown in FIG. 7D, light emitting layers 221 and 222 are formed on the pixel electrodes 211 and 212 exposed through the openings of the pixel defining unit 191, and the light emitting layers 221 and 222 and the pixel defining layer are formed. A common electrode 230 is formed on 190.

Here, the common electrode 230 is a semi-permeable film including at least one metal selected from magnesium (Mg), silver (Ag), calcium (Ca), lithium (Li), chromium (Cr), and aluminum (Al).

Next, the sealing member 250 is disposed on the common electrode 230 to form the organic light emitting display device 100 as shown in FIG. 2. In this case, the spacers 195 of the pixel defining layer 190 maintain a gap between the substrate 110 and the sealing member 250.

According to such a manufacturing method, the organic light emitting display device 100 having improved visibility by suppressing reflection of external light can be manufactured.

The present invention has been described above with reference to the drawings and examples. The drawings and embodiments described above are merely exemplary, and those of ordinary skill in the art will be able to come up with various modifications and equivalent other embodiments therefrom. Therefore, the scope of protection of the present invention should be determined by the technical spirit of the appended claims.

110: substrate 120: buffer layer
160: interlayer insulating film 180: planarization film
190: pixel defining layer 191: pixel defining unit
195: spacer 201, 201: organic light emitting element
211, 212: pixel electrode 221, 222: light emitting layer
230: common electrode 250: sealing member
410: auxiliary wiring

Claims (1)

The invention described in the content of the invention.

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