KR20210037552A - A substrate fixing device for scintilator deposition, a substrate deposition device containing the same and a scintillator deposition method using the same - Google Patents

Abstract

A substrate fixing device of the present invention fixes a substrate such that a deposition material evaporated from at least one evaporation source can be deposited on the substrate. The substrate fixing device includes: a substrate temperature control unit for transferring heat to the substrate; and a substrate fixing unit coupled to one side of the substrate temperature control unit and fixing the substrate. The substrate fixing unit fixes the substrate so that the entire surface of the substrate can be exposed in the direction of the evaporation source, and a space is formed between the substrate fixing unit and the rear surface of the substrate.

Description

A substrate fixing device for scintillator deposition, a substrate deposition device including the same, and a scintillator deposition method using the same {A SUBSTRATE FIXING DEVICE FOR SCINTILATOR DEPOSITION, A SUBSTRATE DEPOSITION DEVICE CONTAINING THE SAME AND A SCINTILLATOR DEPOSITION METHOD USING THE SAME}

The present invention relates to a substrate fixing apparatus for depositing a scintillator, a substrate deposition apparatus including the same, and a deposition method of a scintillator using the same, and in detail, a substrate fixing apparatus to which back side cooling is applied, and a substrate including the same It relates to a deposition apparatus and a deposition method of a scintillator using the same.

A device used for radiography for medical image diagnosis or non-destructive examination, and an X-ray detector that directly converts irradiated X-rays into electrical signals and detects them as image signals, and a scintillator (Scintillator) that detects the radiation that has passed through the subject. Indirect conversion method of flat panel detector (FPD), which converts the light into light from the scintillator and detects the light emitted from the scintillator with a light receiving element.

In the scintillator, columnar crystal groups of alkali metal halide compounds such as cesium iodide and thallium iodide are widely used in order to efficiently transmit the light emitted from the scintillator to the light receiving element of the X-ray detector. Has become.

In the columnar crystal group formed in the scintillator, a void is formed between the columnar crystals, and the total reflection of light in the crystal is repeated due to the difference in the refractive index of the columnar crystal and the gas, and the emitted light is guided to the light receiving element of the X-ray detector. can do.

During the scintillator deposition process, a part of the scintillator evaporator may be accommodated in a chamber in a vacuum state, and a deposition material may be deposited on a substrate fixed to the scintillator evaporator in the chamber.

In the deposition process of the scintillator, gas is supplied to the space between the rear surface of the substrate on which the deposition material is deposited and the substrate fixing part fixing the substrate, and the heat transferred to the substrate by convection is controlled using the supplied gas as a medium. This method is called backside cooling. The rear surface cooling means that precise temperature control of heat transferred to the substrate in a vacuum chamber is possible without affecting the entire surface of the substrate on which the deposition process is performed.

Meanwhile, in the prior art, a configuration for controlling the temperature of a heater provided in a scintillator evaporator used for a scintillator deposition process is simply a heating function or a configuration in which minute temperature control is not possible.

Unexamined Patent Publication No. 2009-0047141

An object of the present invention is to provide a substrate deposition apparatus for depositing a scintillator on a substrate by applying backside cooling and a method for depositing a scintillator using the same.

In addition, an object of the present invention is to provide a substrate fixing apparatus capable of precisely controlling the temperature of a substrate temperature control unit that transfers heat to a substrate when cooling the rear surface, and a substrate deposition apparatus including the same.

In addition, an object of the present invention is to provide a substrate deposition apparatus capable of easily adjusting a relative position and direction of a substrate on which a deposition material is deposited during a scintillator deposition process.

A substrate fixing apparatus according to an embodiment of the present invention is a substrate fixing apparatus for fixing the substrate such that a deposition material evaporated from at least one evaporation source is deposited on a substrate, and a substrate temperature controller for transferring heat to the substrate and the It is coupled to one side of the substrate temperature control unit and includes a substrate fixing unit for fixing the substrate, the substrate fixing unit fixing the substrate so that the front surface of the substrate is exposed in the direction of the evaporation source, and the substrate fixing unit and the substrate It is characterized in that a space is formed between the rear surfaces of the.

Preferably, the substrate temperature control unit includes a first substrate temperature control unit and a flow path provided inside the first substrate temperature control unit and through which oil introduced from an oil supply source circulates, and the first substrate temperature It characterized in that it comprises a second substrate temperature control unit coupled to one side of the control unit.

Preferably, the flow path includes an oil inlet flow line through which the oil is introduced, and an oil outflow flow line through which the oil is discharged, and the oil inlet flow line and the oil outflow flow line are arranged in a crossover manner. It is done.

Preferably, the substrate fixing part has a first fixing part coupled to one side of the second substrate temperature control part, and a second fixing part that is coupled to the other side of the first fixing part and is formed to expose the front surface of the substrate. It is characterized by including the government.

Preferably, the substrate is fixed between the first fixing part and the second fixing part.

Preferably, the first fixing part has a groove formed along the inner circumference of the first fixing part, and is provided inside the groove part by being spaced apart from the groove part by a predetermined distance, and formed along the inner circumference of the first fixing part A sealing member accommodating portion in which at least one sealing member is accommodated, at least one guide pin formed between the groove portion and the sealing member accommodating portion to guide seating of the substrate to the first fixing portion, and a gas in the space It characterized in that it comprises a gas supply hole through which is injected and a gas discharge hole through which gas is discharged from the space.

Preferably, the sealing member seals a gap between the substrate and the first fixing portion, and is in surface contact with the substrate.

Preferably, the substrate is characterized in that an edge portion having a certain area is set along an outer edge portion of the substrate, and the edge portion is disposed between the second fixing portion and the sealing member to apply stress to the sealing member. .

Preferably, the second fixing portion includes an edge portion formed on an inner circumferential surface of the second fixing portion, and a mask region formed at an end of the edge portion, and the mask region is the second fixing portion with respect to a lower surface of the edge portion. It is characterized in that it is formed to be inclined toward the center of the.

Preferably, the total weight of the first fixing portion and the second fixing portion is maintained the same.

Preferably, the substrate fixing device is coupled to a rotating shaft of a rotating part accommodated in a chamber having the evaporation source therein, and rotated according to the rotation of the rotating shaft.

Preferably, the evaporation source is provided at a lower end of the chamber, and the substrate fixing device is located above the evaporation source.

A substrate deposition apparatus according to an embodiment of the present invention is a substrate deposition apparatus for depositing a deposition material evaporated from at least one evaporation source onto a substrate, a chamber receiving the evaporation source therein, and a part of the chamber being accommodated, A revolving part rotated about an orbiting axis, a plurality of rotating parts coupled to the revolving part and revolved according to the rotation of the revolving part, and a substrate fixing device, wherein the substrate fixing device is disposed on a rotating shaft provided in the rotating part. It is characterized in that it is combined and rotated.

Preferably, the substrate fixing unit provided in the chamber and the substrate fixing device is connected to a gas flow control unit, and a space is formed between the substrate fixing unit and the rear surface of the substrate.

Preferably, the gas inflow control unit is characterized in that after forming the space and the chamber in a vacuum state, and injecting the space by controlling the pressure of the gas so that the space becomes a constant pressure during the deposition process.

Preferably, the gas inflow control unit is connected to a pump that pumps the space at a constant pumping rate, a gas supply source receiving gas supplied to the space, and the gas supply source, and the pressure of the gas supplied to the space It characterized in that it comprises a pressure controller to adjust.

Preferably, the pressure controller is characterized in that, while the pump pumps into the space at a constant pumping speed, the pressure of the gas supplied to the space is adjusted by reading a pressure value of the space.

Preferably, the gas inflow control unit includes a first valve provided between the chamber and the space, a second valve provided between the chamber and the pump, a third valve provided between the pump and the space, and It characterized in that it further comprises a fourth valve provided between the space and the pressure controller.

Preferably, when the space and the chamber are formed in a vacuum state, the first valve and the second valve are opened.

Preferably, during the deposition process, the first valve and the second valve are closed, and the third and fourth valves are opened.

Preferably, the gas accommodated in the gas source is characterized in that the inert gas.

Preferably, the revolving part comprises a revolving part frame to which a plurality of the rotating parts are coupled, the revolving shaft is coupled to a central part of the revolving part frame, and the revolving part frame is rotated according to the rotation of the revolving shaft. do.

Preferably, the rotating part is coupled to the revolving part frame through a tilting axis, and the rotating part is individually axially rotated with respect to the revolving part frame around the tilting axis.

Preferably, the evaporation source is provided at a lower end of the chamber, and the substrate fixing device is located above the evaporation source.

A method of depositing a deposition material using a substrate deposition apparatus according to an embodiment of the present invention includes fixing a substrate to a substrate fixing unit provided in the substrate deposition apparatus, connecting a space and an inner space of a chamber, Forming the space and the inner space of the chamber in a vacuum state, separating the space from the inner space of the chamber, supplying gas to the space, and a substrate temperature coupled to the substrate fixing unit And heating the substrate by controlling a temperature of the controller, and depositing the deposition material evaporated from a plurality of evaporation sources on the substrate.

Preferably, it is characterized in that it further comprises the step of pumping the space at a constant pumping speed while separating the space and the inner space of the chamber.

Preferably, in the step of supplying gas to the space, the pressure of the gas supplied to the space is adjusted by reading a pressure value of the space.

According to an embodiment of the present invention, gas is injected into the space while pumping into the space at a certain pumping rate after making the inside of the chamber and the space separated by using a gas inflow control unit, so that the gas is supplied to the space during the scintillator deposition process. The gas pressure can be kept constant.

In addition, since the chamber and the space are formed in a vacuum state while the interior of the chamber and the space are connected by using the gas inflow control unit, damage to the substrate due to a pressure difference between the space and the interior of the chamber can be prevented.

In addition, according to an embodiment of the present invention, the sealing member is in surface contact with the substrate, thereby facilitating detachment of the substrate from the substrate fixing portion, and preventing damage to the substrate caused by bending of the substrate.

In addition, according to an embodiment of the present invention, since oil is used as a heat transfer medium, the temperature of the substrate temperature controller that transfers heat to the substrate can be precisely controlled.

In addition, in the case of a substrate deposition apparatus comprising a plurality of rotating parts coupled to a revolving part, the relative position and direction of the substrate with respect to the evaporation source can be easily adjusted through the revolving part of the revolving part, tilting and rotating of the rotating part, etc. Efficiency can be maximized.

1 is a view showing a conceptual diagram of a substrate deposition apparatus according to an embodiment of the present invention.
2 is a view showing a conceptual diagram of a substrate deposition apparatus according to another embodiment of the present invention.
3 is a view showing a substrate temperature control unit provided in the substrate deposition apparatus of the present invention.
4 is a view showing a flow path provided in the substrate temperature control unit of the present invention.
5 is a view showing the overall shape of a substrate fixing unit provided in the substrate deposition apparatus of the present invention.
6 is a side cross-sectional view of a substrate fixing unit according to the present invention.
7 is a view showing a first fixing portion of the substrate fixing portion of the present invention.
8 is an enlarged view of part B of FIG. 6.
9 is a view showing an edge portion formed on the substrate of the present invention.
10 is a view showing a space formed between the first fixing portion and the substrate of the present invention (an enlarged view of part C of FIG. 6).
11 is an enlarged view of a part of the second fixing part of the substrate fixing part of the present invention (an enlarged view of part D of FIG. 6).
12 is a view showing the configuration of a gas inflow control unit provided in the substrate deposition apparatus of the present invention.
13 is a flowchart showing a deposition method of a deposition material using the substrate deposition apparatus of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to elements of each drawing, it should be noted that the same elements are assigned the same numerals as possible, even if they are indicated on different drawings. In addition, in describing the present invention, when it is determined that a detailed description of a related known configuration or function may obscure the subject matter of the present invention, a detailed description thereof will be omitted. In addition, a preferred embodiment of the present invention will be described below, but the technical idea of the present invention is not limited or limited thereto, and may be modified and variously implemented by a person skilled in the art.

1 is a diagram showing a conceptual diagram of a substrate deposition apparatus 100 according to an embodiment of the present invention.

Referring to FIG. 1, the substrate deposition apparatus 100 according to an embodiment of the present invention is connected to a chamber 10 forming an enclosed space therein and a rotating motor (not shown) to transmit power from the rotating motor. A rotational part 20 that is rotatable according to the rotational part 20, a substrate temperature control part 40 that is rotated by being coupled to the magnetism part 20 to transfer heat to the substrate 2, and one side of the substrate temperature control part 40 It is coupled to the substrate temperature control unit 40 and rotates together with a substrate fixing unit 50 for fixing the substrate (2). In this case, the rotating motor may be disposed outside the chamber 10.

Hereinafter, in the present invention, a configuration including the substrate temperature control unit 40 and the substrate fixing unit 50 is defined as a “substrate fixing device”.

Although not shown in FIG. 1, a gas inflow control unit, which will be described later, is connected to the chamber 10 and the substrate fixing unit 50 so that the interior of the chamber 10 and between the substrate fixing unit 50 and the rear surface of the substrate 2 are connected. It is possible to make a vacuum or maintain a constant pressure between the substrate fixing portion 50 and the rear surface of the substrate 2. The gas inflow control unit may be connected to an exhaust port (not shown) formed on a side wall or an upper wall of the chamber 10.

The rotating part 20 includes a rotating shaft 22 connected to the rotating motor and rotatable according to transmission of power from the rotating motor. The rotation shaft 22 may pass through the upper wall of the chamber 10 and may be partially accommodated in the chamber 10. As an example, the rotating shaft 22 may be formed in a cylindrical shape, preferably aluminum (Al), copper (Cu), iron (Fe), or other metal alloy.

At this time, the substrate temperature control unit 40 is coupled to one end of the rotation shaft 22, the substrate fixing unit 50 is coupled to one side of the substrate temperature control unit 40, and the substrate temperature control unit 40 and The substrate fixing part 50 may be rotated together with the rotation of the rotation shaft 22.

In addition, the rotating part 20 is a rotary joint 21 formed on the rotating shaft 22 and a sealing formed to be in close contact with the outer surface of the chamber 10 and surrounding the rotating shaft 22. It further includes a part (23).

The rotary joint 21 may be connected to an oil supply source (not shown) and a gas supply source to be described later. In addition, a heat exchanger (H) is connected to the rotary joint (21) so that heat exchange with oil circulating inside the substrate temperature controller (40) can be performed.

The rotary joint 21 includes an oil inlet (Oinlet), an oil outlet (Ooutlet), a gas inlet (Ainlet) and a gas outlet (Aoutlet).

The oil inlet and the oil outlet may be connected to an oil supply source, and a gas inlet and a gas outlet may be connected to a gas supply source.

At this time, the rotary joint 21 is of the rotary joint 21 coupled to the rotating shaft 22 to prevent shortening of the life of the rotating shaft 22 due to the occurrence of an assembly tolerance between the rotary joint 21 and the rotating shaft 22. It is preferable that the bracket (not shown) is formed to match the rotating shaft 22.

An oil inflow path 24 and an oil discharge path 25 connected to the oil inlet and the oil outlet, respectively, may be formed inside the rotating shaft 22. In addition, a gas inlet path 26 and a gas discharge path 27 connected to the gas inlet and the gas outlet may be formed inside the rotating shaft 22.

The oil supplied through the oil inlet from the oil supply source may flow into the substrate temperature controller 40 through the oil inlet path 24, and the oil circulating inside the substrate temperature controller 40 may be transferred to the substrate. It may be returned to the oil supply source again through the oil outlet (Ooutlet) through the oil discharge path 25 from the temperature control unit 40.

The gas supplied through the gas inlet from the gas supply source may be introduced into the substrate fixing part 50 through the gas inlet path 26, and through the gas discharge path 27 from the substrate fixing part 50. It may be discharged to the outside of the substrate deposition apparatus 10 through a gas outlet.

At this time, the oil inflow path 24 and the oil discharge path 25 pass through the inside of the rotating shaft 22 to stably supply oil to the flow path provided in the substrate temperature control unit 40, which will be described later, and supply oil from the flow path. In order to discharge, the diameters of the oil inflow path 24 and the oil inflow hole of the flow path, and the diameter of the oil discharge path 25 and the oil outflow hole of the flow path are preferably formed to be the same.

In addition, the gas inlet path 26 and the gas discharge path 27 pass through the rotation shaft 22 and the substrate temperature control part 40 to stably supply gas into the substrate fixing part 50, which will be described later. Gas provided in the gas inlet path 26 and the gas supply hole provided in the substrate fixing part 50, and the gas provided in the gas discharge path 27 and the substrate fixing part 50 so that gas can be discharged from the inside of the top 50 It is preferable that the diameters of the discharge holes are each formed the same.

On the other hand, although not shown, in the present invention, the oil inflow path 24, the oil discharge path 25, the gas inflow path 26, and the gas exhaust path 27 are transferred to the outside during the scintillator deposition process. It is preferable that a heat insulating material (not shown) or the like is formed so as to surround each path so as not to be released. In addition, each path is preferably formed to be spaced apart from each other.

The sealing part 23 may be formed of a fluid ferrofluid. In this case, the sealing unit 23 may cool heat conducted from the substrate temperature control unit 40 to the portion of the rotating shaft 22 located outside the deposition chamber 20.

In the case of the cooling method of the rotating shaft 22 in the present invention, a purified cooling water (PCW) method may be used. In addition, when the deposition process is in progress, the sealing part 23 is disposed so as to be in close contact with the boundary between the chamber 10 maintaining a vacuum state and the external atmosphere, in detail, the outer surface of the chamber 10 and is formed to surround the rotating shaft 22 Thus, it is possible to prevent gas from flowing into the chamber 10 through the gap between the rotating shaft 22 and the chamber 10. Accordingly, a vacuum state inside the chamber 10 may be maintained during the deposition process.

In addition, as described above, the substrate temperature control unit 40 is directly coupled to the rotation axis 22, and heat generated from the substrate temperature control unit 40 may be conducted to the rotation axis 22.

In this case, if the material of the rotating shaft 22 and the substrate temperature adjusting part 40 is applied differently, the rotating shaft 22 may be damaged due to different coefficients of thermal expansion of the rotating shaft 22 and the substrate temperature adjusting part 40. . Therefore, it is preferable that the rotation shaft 22 and the substrate temperature controller 40 are made of the same material.

The substrate deposition apparatus 100 described with reference to FIG. 1 may include a rotating part 20 formed of a single rotating shaft 22, and a part of the rotating part 20 may be accommodated in the chamber 10.

In the substrate deposition apparatus 100 shown in FIG. 1, a substrate temperature control unit 40 coupled to one end of the rotating shaft 22 and a substrate fixing unit 50 coupled to one side of the substrate temperature control unit 40 are provided in a chamber ( 10), and the substrate temperature control unit 40 and the substrate fixing unit 50 may be rotated according to the rotation of the rotation shaft 22.

In this case, the substrate temperature control unit 40 includes a first substrate temperature control unit 41 coupled to one end of the rotation shaft 22 and one side of the first substrate temperature control unit 41 ( The first substrate temperature control unit 41 includes a second substrate temperature control unit 43 coupled to a surface opposite to a surface coupled to the rotation shaft 22), and the above-described flow path includes a first substrate temperature control unit ( 41) can be provided inside.

In addition, the substrate fixing part 50 includes a first fixing part 52 to which the second substrate temperature control part 43 is coupled to one side, and a second fixing part which is coupled to the other side of the first fixing part 52. 54, and the substrate 2 may be fixed between the first fixing part 52 and the second fixing part 54. As an example, the substrate 2 may be a glass panel.

At least one evaporation source 1 may be provided at the bottom of the chamber 10, and the front surface of the substrate 2 is exposed in the direction of the evaporation source 1 in the substrate 2 fixed to the substrate fixing part 50. It may be arranged to face the evaporation source (1).

In this case, the “substrate fixing device” including the substrate temperature control unit 40 and the substrate fixing unit 50 may be positioned above the evaporation source 1.

Accordingly, the deposition material may be evaporated from the evaporation source 1 provided at the lower end of the chamber 10 to be supplied to the substrate 2 positioned above the evaporation source 1. As an example, the deposition material may be an alkali metal halide compound such as cesium iodide or thallium iodide.

During the scintillator deposition process on the substrate 2 through the substrate deposition apparatus 100, the chamber 10 is maintained in a vacuum state, and the deposition material evaporated from the evaporation source 1 is transferred to the substrate while the rotation axis 22 is rotated. It can be uniformly deposited on (2). At this time, the evaporation material may be deposited on the entire surface of the substrate 2.

2 is a diagram showing a conceptual diagram of a substrate deposition apparatus 200 according to another embodiment of the present invention.

Referring to FIG. 2, unlike the substrate deposition apparatus 100 of FIG. 1 described above, in the substrate deposition apparatus 200 of the present embodiment, a plurality of rotating parts 120 may be coupled to one revolving part 130. have. Accordingly, the substrate temperature control unit 40 and the substrate fixing unit 50 may be respectively coupled to the plurality of rotating parts 120, and the substrate 2 may be fixed to each of the substrate fixing units 50.

The substrate deposition apparatus 200 includes a chamber 10 forming an enclosed space therein, a revolving part 130 that is connected to an orbiting motor (not shown) and rotatable according to power transmission from the orbiting motor, and an orbiting part 130. ) Is coupled to and revolves according to the rotation of the revolving unit 130. In this case, the point that the evaporation source 1 is provided at the lower end of the chamber 10 is the same as that of the chamber 10 shown in FIG. 1.

The revolving part 130 includes a revolving part frame 131 and a revolving shaft 133 formed in the center of the revolving part frame 131, and the revolving part frame 131 may accommodate a plurality of rotating parts 120. A space that can be formed can be formed. In the present invention, the rotating part 120 may be coupled to the rotating part frame 131 through the tilting shaft 122.

The revolution shaft 133 may pass through the upper wall of the chamber 10 and may be partially accommodated in the chamber 10. As an example, the revolving shaft 133 may be formed in a cylindrical shape, preferably aluminum (Al), copper (Cu), iron (Fe), or other metal alloy. In addition, the revolving part frame 131 may be located inside the chamber 10, and a plurality of rotating parts 120 coupled to the revolving part frame 131 may also be located inside the chamber 10.

Like the substrate deposition apparatus 100 shown in FIG. 1, the chamber 10 and the substrate fixing unit 50 of the substrate deposition apparatus 200 shown in FIG. 2 may be connected to a gas flow control unit, which will be described later. May be the same as the substrate deposition apparatus 100 illustrated in FIG. 1.

In addition, the revolving part 130 is disposed to be in close contact with the rotary joint 132 formed on the upper part of the revolving shaft 133 and the outer surface of the chamber 10, and the sealing part formed to surround the revolving shaft 133 (134) is further included.

The rotary joint 132 may be connected to an oil supply source (not shown) and a gas supply source to be described later. A heat exchanger H is connected to the rotary joint 132 so that heat exchange with oil circulating inside the substrate temperature control unit 40 coupled to each of the rotating parts 120 may be performed. In this case, the rotary joint 132 may be the same as the rotary joint 21 illustrated in FIG. 1 except that the rotary joint 132 is formed on the upper portion of the revolution shaft 133.

As shown in FIG. 2, the inside of the revolution shaft 133 passes through the inside of the revolution shaft 133 and includes an oil inlet, an oil outlet, a gas inlet, and a gas outlet of the rotary joint 132. An oil inlet path 136, an oil outlet passage 137, a gas inlet passage 138, and a gas outlet passage 139 respectively connected to the outlet may be formed. At this time, the oil inlet and the oil outlet of the rotary joint 132 are connected to the oil supply source, and the gas inlet and the gas outlet of the rotary joint 132 may be connected to the gas supply source. have.

Except that the oil inflow path 136, the oil discharge path 137, the gas inflow path 138, and the gas discharge path 139 are branched and connected to a plurality of rotating parts 120, as shown in FIG. The configuration of the oil inflow path 24, the oil discharge path 25, the gas inflow path 26, and the gas discharge path 27 may be the same. In addition, the configuration of the sealing unit 134 may be the same as that of the sealing unit 23 illustrated in FIG. 1.

In the substrate deposition apparatus 200 of the present invention, the revolving part frame 131 is rotated according to the rotation of the revolving shaft 133, and rotates the plurality of rotating parts 120 coupled to the revolving part frame 131 to the revolving shaft 133. ) Can be rotated (orbited) around.

In addition, the rotating unit 120 is connected to a tilting motor (not shown) and can be individually axially rotated with respect to the rotating unit frame 131 around the tilting shaft 122, and is connected to a rotating motor (not shown). The substrate temperature control unit 40 and the substrate fixing unit 50 may be rotated (rotated) around the rotation axis 124. In this case, the rotating motor may be disposed inside the rotating part 120, and the tilting motor may be disposed in the revolving part frame 131 or the rotating part 120.

As shown in FIG. 2, the rotating part 120 includes a rotary joint 123 formed on the rotating shaft 124 with respect to the rotating part main body 121 and the rotating shaft 124, and the rotating part main body 121. It further includes a sealing portion 125 disposed to be in close contact with the inner surface and formed to surround the rotating shaft 124.

The rotating part main body 121 is a kind of an atmospheric pressure box (ATM box), and may be connected to the rotating part frame 131 through a tilting shaft 122 as shown in FIG. 2, with the tilting shaft 122 as a center. It may be individually axially rotated with respect to the revolving part frame 131.

In this case, the configuration of the rotary joint 123 shown in FIG. 2 is the same as the configuration of the rotary joint 21 shown in FIG. 1, and the oil inflow path 136 and the oil discharge path described above are in the rotary joint 123. 137, the gas inlet path 138, and the gas discharge path 139 may be branched and connected, respectively.

In addition, the shape and material of the rotating shaft 124 and the sealing unit 125 illustrated in FIG. 2 may be the same as the rotating shaft 22 and the sealing unit 23 illustrated in FIG. 1.

On the other hand, in the case of configuring a plurality of rotating parts 120 like the substrate deposition apparatus 200 illustrated in FIG. 2, it is preferable to form a rotary joint 123 for each of the rotating parts 120.

At this time, in the case of the rotary joint 123, due to its characteristics, particles may be generated due to friction generated when the rotating shaft 124 rotates. Therefore, since the rotary joint 123 shown in FIG. 2 cannot be used in the chamber 10 in a vacuum state, the rotary joint 123 is a main body of a rotating part that maintains a pressure equal to the atmospheric pressure therein, as shown in FIG. It is preferably located within 121.

In addition, although not shown, in the substrate deposition apparatus 200 illustrated in FIG. 2, the rotary joint 123 includes an oil inlet, an oil outlet, a gas inlet, and a gas outlet, like the rotary joint 21 illustrated in FIG. 1. .

The oil inlet and the oil outlet of the rotary joint 123 are connected to the oil inlet path 136 and the oil outlet path 137, respectively, and the gas inlet and the gas outlet of the rotary joint 123 are respectively a gas inlet path 138 and a gas outlet. It may be connected to the gas discharge path 139.

In this case, although not shown in FIG. 2, an oil inflow path and an oil discharge path respectively connected to the oil inlet and the oil outlet of the rotary joint 123 may be formed in the rotation shaft 124. In addition, a gas inlet path and a gas outlet path connected to the gas inlet and the gas outlet of the rotary joint 123 may be formed inside the rotation shaft 124.

An oil inflow path, an oil discharge path, a gas inflow path, and a gas discharge path formed in the rotation shaft 124 of the substrate deposition apparatus 200 are respectively an oil inflow path 136 and an oil discharge through the interior of the rotation shaft 133. The oil inflow path 24, the oil discharge path 25, and the gas inflow path 26 shown in FIG. 1 except that it is connected to the path 137, the gas inlet path 138 and the gas discharge path 139. And it may be the same as the configuration of the gas discharge path (27).

For example, in the substrate deposition apparatus 200 shown in FIG. 2, the inside of the substrate temperature controller 40 coupled to one end of the rotation shaft 124 through an oil inflow path and an oil discharge path formed inside the rotation shaft 124 Oil may be supplied to the flow path provided in the flow path, and oil may be discharged from the flow path after the oil is circulated in the flow path.

In addition, gas is supplied to the inside of the substrate fixing part 50 coupled to one side of the substrate temperature control part 40 through a gas inflow path and a gas discharge path formed inside the rotating shaft 124, and the substrate fixing part 50 Gas can be discharged from the inside.

The substrate deposition apparatus 200 described with reference to FIG. 2 includes a revolving part 130 having an orbiting axis 133, and a plurality of rotating parts 120 coupled to the revolving part 130 is a chamber 10. Can be accommodated within.

In the substrate deposition apparatus 200 shown in FIG. 2, when the revolving shaft 133 formed in the center of the revolving part frame 131 rotates (orbits), the revolving part frame 131 rotates the revolving shaft 133. The plurality of rotating parts 120 coupled to the orbiting shaft 133 may rotate (orbit) around the orbital shaft 133 while being rotated according to the rotation.

Accordingly, in the substrate deposition apparatus 200 having a plurality of magnetrons 120, deposition of a deposition material is performed on a plurality of substrates 2 fixed to each of the substrate fixing units 50 in a single deposition process. It can be deposited on a plurality of substrates (2).

In addition, in the substrate deposition apparatus 200, since the plurality of rotating parts 120 can be individually axially rotated with respect to the revolving part frame 131 around the tilting axis 122, the substrate is fixed as shown in FIG. It is also possible that the substrate 2 fixed to the top 50 is not disposed to face the evaporation source 1 but is disposed in an inclined form.

Therefore, in the substrate deposition apparatus 200, the relative position and direction of the substrate with respect to the evaporation source 1 can be easily adjusted through revolution of the revolving unit 130, tilting and rotation of the rotating unit 120, etc. Can be maximized.

The substrate temperature control unit 40 and the substrate fixing unit 50 provided in the substrate deposition apparatus 200 shown in FIG. 2 are the same as the substrate temperature control unit 40 and the substrate fixing unit 50 shown in FIG. 1. It can be a configuration.

Meanwhile, in the substrate deposition apparatus 200 shown in FIG. 2, the temperature of each substrate temperature controller 40 is controlled without configuring an oil outflow path from an external oil supply source to each substrate temperature controller 40 individually. An oil tank (not shown) may be disposed inside the frame 131 of the revolving part so as to be uniformly controlled. As an example, the oil tank may be disposed below the revolving shaft 133 inside the revolving part frame 131.

The oil tank is connected to the above-described oil inflow path 136 to receive oil from an external oil supply source, and the substrate temperature control unit 40 connected to the oil discharge path 137 and coupled to each of the rotating parts 120 The oil discharged from) can be discharged to the oil supply source.

In this case, the oil inflow path 136 and the oil discharge path 137 may be branched from the oil tank and connected to the rotating part 120, respectively.

The oil tank may function as a damper for heat transferred from the heat exchanger (H). In addition, the oil tank collects oil supplied from an external oil supply source into the oil tank, and branching from the oil tank to each substrate temperature control unit 40 may be a branch starting point of the supplied oil.

Accordingly, in the substrate deposition apparatus 200 shown in FIG. 2, when configuring an oil tank, the oil inflow path 136 and the oil discharge path 137 connected from the oil tank to the respective substrate temperature controllers 40 are By setting the conditions of the branch paths to be the same, it is possible to uniformly control the temperature of each of the substrate temperature controllers 40 during the scintillator deposition process.

3 is a view showing a substrate temperature control unit 40 provided in the substrate deposition apparatus 100 and 200 of the present invention, and FIG. 4 is a flow path 422 provided in the substrate temperature control unit 40 of the present invention. It is a figure shown. Here, FIG. 3(a) is a view showing the overall shape of the substrate temperature control unit 40, FIG. 3(b) is a perspective view of the oil flow unit 42, and FIG. 3(c) is a substrate temperature control unit 40 ) Is a view showing the first substrate temperature control unit 41 of the configuration.

Referring to FIG. 3(a), the substrate temperature control unit 40 is coupled to the other side of the first substrate temperature control unit 41 and the first substrate temperature control unit 41 coupled to the rotation shafts 22 and 124. A second substrate temperature control unit 43 may be included, and an oil flow unit 42 shown in FIG. 3B may be provided inside the first substrate temperature control unit 41.

The above-described substrate fixing unit 50 may be coupled to one side of the substrate temperature control unit 40. In the present invention, the substrate temperature control unit 40 may transfer heat to the substrate fixing unit 50 and the substrate 2 fixed to the substrate fixing unit 50.

The first substrate temperature controller 41 and the second substrate temperature controller 43 may be made of the same material. Specifically, when manufacturing the first substrate temperature controller 41 and the second substrate temperature controller 43, metal materials such as aluminum (Al) and copper (Cu) may be used, and the first substrate temperature controller ( 41) and the second substrate temperature controller 43 may have the same material, so that the specific heat and temperature strain of the first substrate temperature controller 41 and the second substrate temperature controller 43 may be the same. .

Through the above configuration, the entire substrate temperature control unit 40 is deformed due to thermal mismatch between the first substrate temperature control unit 41 and the second substrate temperature control unit 43, resulting in a substrate fixing unit. It is possible to prevent the substrate 2 fixed to 50 from being damaged.

The oil flow part 42 shown in FIG. 3(b) is provided inside the first substrate temperature control part 41 and may be coupled to the first substrate temperature control part 41 by welding.

The oil flow part 42 includes a flow path 422 through which oil introduced from an oil supply source is circulated.

3(b) and 4, the oil passage 422 includes an oil inlet hole 4222 connected to the above-described oil inlet passage 24 and an oil passage 422 through the oil inlet hole 4222. The oil inlet flow line 4224 that flows into and circulates in the flow path 422, the oil outlet hole 4226 connected to the above-described oil discharge path 25, and the oil circulated in the flow path 422 are oil. It includes an oil outlet flow line 4228 to be discharged through the discharge hole 4226.

The flow path 422 circulates the oil supplied from the oil supply source within the flow path 422 and heats the substrate 2 fixed to the substrate fixing part 50 while the deposition material is deposited on the substrate 2. I can deliver. In this case, a method of transferring heat from the flow path 422 to the substrate fixing part 50 may be radiation, convection, conduction, or the like.

As described above, the diameters of the oil inflow path 24 and the oil inflow hole 4222 of the flow path 422 and the diameters of the oil discharge path 25 and the oil outflow hole 4226 of the flow path 422 are the same. Can be.

The temperature of the oil circulating in the flow path 422 may be 30°C to 200°C, and the flow path 422 may be formed to prevent leakage of oil to a portion other than the flow path 422 as much as possible.

In addition, in the present invention, oil is used as a heat transfer medium to the substrate 2, and the oil can give a continuous temperature change, so that the scintillator deposition process can be stably progressed. In addition, it can be cooled and the range of temperature transmission can be widened.

Therefore, in the present invention, since oil is used as a heat transfer medium, the temperature of the substrate temperature controller 40 that transfers heat to the substrate 2 can be precisely controlled.

As shown in FIG. 4, the flow path 422 smoothly forms corners of each of the oil inflow flow lines 4224 and oil outflow flow lines 4228 to prevent eddy currents that may occur when oil circulates in the corners. Can be reduced.

On the other hand, for efficient scintillator deposition, it is desirable to keep the variation in temperature uniformity in the flow path 422 as low as possible. The biggest factor in the oil temperature change in the flow path 422 is that the temperature in the oil inlet flow line 4224 is higher than the temperature in the oil outlet flow line 4228.

Therefore, in the present invention, as shown in FIG. 4, in order to maintain the temperature uniformity of the entire flow path 422, the oil inflow flow line 4224 and the oil outflow flow line 4228 of the flow path 422 are formed to be intersected. It is desirable to do it.

In this case, as the cross width of the oil inflow flow line 4224 and the oil outflow flow line 4228 is formed to be denser, the temperature uniformity of the entire flow path 422 may be improved.

On the other hand, as the cross width between the oil inflow line 4224 and the oil outflow line 4228 is formed tightly, the rate of temperature change in the flow path 422 by the heat exchanger H may decrease, so that the oil inflow flow line It is preferable that the cross width between the 4224 and the oil outflow flow line 4228 is configured within a range that ensures a temperature change rate required for the scintillator deposition process.

Referring to FIG. 3(c), the first substrate temperature control part 41 passes through the inflow oil through hole 412 through which the oil inflow path 24 passes and the outflow oil through which the oil discharge path 25 passes. It includes a hole (414).

The oil inflow path 24 may pass through the inflow oil through hole 412 and be connected to the oil inflow hole 4222, and the oil drainage path 25 passes through the outflow oil through hole 414 and passes through the oil outflow hole 4226. ) Can be connected.

In this case, sealing (not shown) may be provided in the inflow oil passage hole 412 and the outflow oil passage hole 414 so that oil does not leak. In addition, the diameters of the oil inflow path 24 and the inflow oil passage hole 412 and the diameters of the oil discharge path 25 and the outflow oil passage hole 414 may be formed identically.

3(b), 3(c), and 4, the first substrate temperature controller 41 includes an inlet gas passage hole 416 and a gas discharge path through which the gas inlet path 26 passes at the center. It further includes an outlet gas passage hole 418 through which (27) passes.

In addition, the oil flow part 42 further includes an inlet gas passage hole 424 through which the gas inlet path 26 passes and an outlet gas passage hole 426 through which the gas discharge path 27 passes.

In an embodiment of the present invention, the gas inlet path 26 is an inlet gas passage hole 416 provided in the first substrate temperature control part 41 and an inlet gas passage hole 424 provided in the oil flow part 42. It is connected to a gas supply hole 524 provided in the substrate fixing part 50 to be described later, and the gas discharge path 27 is an outlet gas passing hole 418 provided in the first substrate temperature control part 41. And it may be connected to the gas discharge hole 525 provided in the substrate fixing unit 50 to be described later through the outlet gas passage hole 426 provided in the oil flow part 42.

At this time, the diameters of the gas inlet path 26 and the inlet gas passage hole 416 provided in the first substrate temperature control part 41 and the inlet gas passage hole 424 provided in the oil flow part 42 are the same. The gas discharge path 27 and the outflow gas passage hole 418 provided in the first substrate temperature control part 41 and the outflow gas passage hole 426 provided in the oil flow part 42 The diameter can be formed the same.

Also, provided in the inlet gas passage hole 416 provided in the first substrate temperature control part 41, the inlet gas passage hole 424 provided in the oil flow part 42, and the first substrate temperature control part 41 Sealing (not shown) may be provided in the outlet gas passage hole 418 and the outlet gas passage hole 426 provided in the oil flow portion 42 so that oil does not flow.

Although not shown, an inlet gas passage hole through which the gas inlet path 26 passes and an outlet gas passage hole through which the gas discharge path 27 passes may also be formed in the center of the second substrate temperature controller 43.

In an embodiment of the present invention, the second substrate temperature control unit 43 is the first substrate temperature control unit 41 so that heat can be more efficiently transferred to the substrate 2 fixed to the substrate fixing unit 50. It may be formed to be thinner than that.

As in the above configuration, when the second substrate temperature control unit 43 is formed to be thinner than the first substrate temperature control unit 41, the distance between the flow path 422 through which oil is circulated and the substrate 2 is shortened, and thus the scintillator During the deposition process, heat can be more efficiently transferred to the substrate 2.

5 is a view showing the overall shape of the substrate fixing unit 50 provided in the substrate deposition apparatuses 100 and 200 of the present invention, and FIG. 6 is a side cross-sectional view of the substrate fixing unit 50 of the present invention. The illustration of the substrate 2 described above in FIG. 5 will be omitted.

5 and 6, the substrate fixing part 50 includes a first fixing part 52 to which a second substrate temperature control part 43 is coupled to one side, and the other side of the first fixing part 52. It is coupled to and includes a second fixing portion 54 formed in a frame structure so that the front surface of the substrate 2 is exposed.

The substrate 2 may be fixed between the first fixing part 52 and the second fixing part 54, and in detail, the substrate fixing part 50 is attached to the first fixing part 52 and the substrate 2 After mounting, the second fixing part 54 may be positioned on the substrate 2 to fix the substrate 2.

At this time, after placing the substrate 2 between the first fixing portion 52 and the second fixing portion 54 so that only the active area (A) portion of the substrate 2 is exposed, the first fixing portion 52 and the second fixing part 54 may be coupled to each other through a plurality of connection parts 56. In an embodiment of the present invention, the active region A of the substrate 2 may be a front portion of the substrate.

The active region A of the substrate 2 refers to a region in which the scintillator material supplied from the evaporation source 1 is deposited on the substrate 2. The active area A of the substrate 2 is the thickness of the edge portion 542 provided on the inner circumferential surface of the second fixing portion 54 in the direction of the center of the second fixing portion 54 according to the purpose of the substrate 2 It can be set in various ways by adjusting.

In addition, the material of the first fixing part 52 and the second fixing part 54 may be the same. In detail, the first fixing part 52 and the second fixing part 54 may be made of a metal material such as aluminum (Al) and copper (Cu), and the first fixing part 52 and the second fixing part 54 ) Of the same material, the specific heat and temperature strain of the first fixing part 52 and the second fixing part 54 may be the same.

Through the above configuration, thermal mismatch between the first fixing part 52 and the second fixing part 54 occurs according to the heat conducted from the substrate temperature control part 40 to the substrate fixing part 50, and thus the substrate fixing part ( It is possible to prevent damage to the substrate 2 fixed to the substrate fixing part 50 by deformation 50).

FIG. 7 is a view showing the first fixing part 52 of the substrate fixing part 50 of the present invention, and FIG. 8 is an enlarged view of part B of FIG. 6.

6 to 8, the first fixing part 52 has a groove part 521 formed along the inner circumference of the first fixing part 52 and a groove part 521 spaced apart from the groove part 521 by a predetermined distance. And at least one guide pin 523 formed between the sealing member accommodating portion 522 and the groove portion 521 and the sealing member accommodating portion 522 provided on the inside of the first fixing portion 52 and formed along the inner circumference of the first fixing portion 52 ).

The groove portion 521 forms a predetermined free space so that the outer end of the substrate 2 does not directly contact the first fixing portion 52 as shown in FIGS. 6 and 8. Accordingly, when the substrate 2 is separated from the first fixing portion 52 after the scintillator deposition process is completed, the substrate 2 can be removed through the groove portion 521 to prevent damage to the substrate 2 can do.

The sealing member O may be accommodated in the sealing member accommodating part 522 as shown in FIGS. 6 and 8. The sealing member O accommodated in the sealing member accommodating portion 522 may seal a gap between the substrate 2 and the first fixing portion 52. As an example, the sealing member O may be an O-ring.

The guide pin 523 may guide the seating of the substrate 2 onto the first fixing part 52. In addition, the guide pin 523 may be formed of a material such as Teflon that is resistant to static electricity to prevent damage to the TFT area (Thin film transistor area) of the substrate 2 mounted on the first fixing part 52.

As shown in FIGS. 5 and 7, the first fixing part 52 is a gas supply hole through which gas is injected between the first fixing part 52 and the rear surface of the substrate 2 through the gas flow control. 524 and a gas discharge hole 525 through which gas is discharged from between the first fixing part 52 and the rear surface of the substrate 2.

As described above, the gas inlet path 26 and the gas supply hole 524, the gas discharge path 27 and the gas discharge hole 525 may each have the same diameter.

In addition, the gas supply hole 524 and the gas discharge hole 525 are provided in the above-described substrate temperature control unit 40 (inlet gas passage hole 416, inlet gas passage hole 424, outlet gas) It may be formed at a position coincident with the through hole 418 and the outflow gas through hole 426.

Through this, gas may be supplied to the space between the first fixing part 52 and the rear surface of the substrate 2 through the gas supply hole 524 through the gas inlet path 26. In addition, gas may be discharged from the space between the first fixing part 52 and the rear surface of the substrate 2 through the gas discharge hole 525 through the gas discharge path 27.

Meanwhile, the gas supplied between the first fixing part 52 and the rear surface of the substrate 2 may be a noble gas such as helium.

Helium is second to hydrogen on the periodic table of the elements, has a small mass, has little reactivity, and is a fine particle (the atomic number of helium is 2). Due to the particle characteristics of helium, even if the sealing member O is inserted into the sealing member accommodating part 522 as described above, helium leaks through the gap between the sealing member O and the substrate 2 and the chamber 10 It may leak into the inside of.

Accordingly, the gas supply hole 524 and the gas discharge hole 525 are formed by the sealing member receiving part 522 to prevent leakage of helium supplied between the first fixing part 52 and the rear surface of the substrate 2 as much as possible. It may be formed to be spaced apart as much as possible, and preferably may be located in the center of the first fixing portion 52.

As shown in FIG. 6, at least one recessed portion 526 may be formed in the lower portion of the first fixing portion 52.

In the embodiment of the present invention, the total weight of the first fixing portion 52 and the second fixing portion 54 (total weight of the substrate fixing portion 50) is the first fixing portion 52 and the second fixing portion ( 54) is preferably maintained the same regardless of the size change.

For example, when the size of the substrate 2 decreases, the size of the second fixing portion 54 increases in order to fix the substrate 2, so that the weight of the second fixing portion 54 may increase. If the weight of the first fixing part 52 is maintained, the total weight of the substrate fixing part 50 increases due to the increase in the weight of the second fixing part 54, so the substrate 2 through the substrate fixing part 50 The efficiency of heat transfer to the furnace may decrease.

Therefore, in the embodiment of the present invention, the total weight of the first fixing part 52 and the second fixing part 54 is the same regardless of the size change of the first fixing part 52 and the second fixing part 54. It is desirable to be maintained.

As described above, the active region A of the substrate 2 is the center of the second fixing portion 54 of the rim portion 542 provided on the inner circumferential surface of the second fixing portion 54 according to the use of the substrate 2. It can be set in various ways by adjusting the protruding thickness in the direction.

At this time, when the weight of the second fixing part 54 is changed by adjusting the protruding thickness of the rim part 542 in the center direction of the second fixing part 54, the first fixing part 52 and the second fixing part 54 The first fixing part 52 may also be replaced so that the total weight of the top 54 remains the same.

In the embodiment of the present invention, when the first fixing part 52 is replaced, the overall dimension of the first fixing part 52 is not changed, and the depression 526 formed under the first fixing part 52 is By replacing the first fixing parts 52 with different numbers, the total weight of the first fixing parts 52 and the second fixing parts 54 can be kept the same.

9 is a view showing an edge portion 222 formed on the substrate 2 of the present invention.

In the embodiment of the present invention, in order to form a space between the first fixing part 52 and the rear surface of the substrate 2 and inject gas into the space, the above-described sealing is performed outside the active area A of the substrate 2. It is desirable to apply stress to the member (O).

6, 8, and 9, in the present invention, an edge portion 222 outside the active area A so that gas can be injected between the first fixing portion 52 and the rear surface of the substrate 2 Can be set.

The edge portion 222 may be disposed between the second fixing portion 54 and the sealing member O as shown in FIG. 8 to apply stress to the sealing member O. Since the edge portion 222 applies stress to the sealing member O, a space in which gas can be injected can be stably formed between the first fixing portion 52 and the rear surface of the substrate 2.

Preferably, the edge portion 222 may be set to a predetermined area along the outer edge portion of the substrate 2.

Meanwhile, after the scintillator deposition process is completed, the edge portion 222 of the substrate 2 except for the portion of the active area A where the deposition material is deposited may be separated from the active area A.

When the scintillator deposition process is completed, the substrate 2 on which the deposition material has been deposited must be removed from the first fixing part 52, and the substrate 2 is easily attached due to the adhesion between the sealing member O and the substrate 2. It may happen that it does not fall off. In addition, during the scintillator deposition process, the outside of the front surface of the substrate 2 (the inside of the chamber 10) is in a vacuum state, and gas is injected between the first fixing part 52 and the rear surface of the substrate 2. There is a possibility that the substrate 2 is bent and damaged due to a pressure difference between the space between the fixing portion 52 and the rear surface of the substrate 2 and the outer front side of the substrate 2.

In order to prevent this problem, in the present invention, as shown in FIG. 8, the sealing member O accommodated in the sealing member accommodating portion 522 may be formed to be in surface contact with the substrate 2 rather than in line contact.

As an example, the sealing member O shown in FIG. 8 may have a surface in contact with the substrate 2 having a rectangular shape. In addition, as described above, the groove portion 521 forms a predetermined free space so that the outer end of the substrate 2 does not directly contact the first fixing portion 52 to prevent the outer end of the substrate 2 from being bent. can do.

The shape of the above-described sealing member O is not limited to a square shape as shown in FIG. 8, and various shapes such as a circle, a triangle, a pentagon, and a hexagon may be possible.

Alternatively, it is possible to configure the sealing member accommodating portion 522 with at least two accommodating grooves (not shown) so that at least two sealing members O are accommodated in the accommodating groove.

In the case of configuring two or more sealing members (O), the cross-sectional shape of the sealing member (O) may be circular, and even in this case, a plurality of sealing members (O) accommodated in the receiving groove as in the embodiment shown in FIG. May be in surface contact with the substrate 2.

Through the above-described configuration, the sealing member O is in surface contact with the substrate 2 to facilitate detachment of the glass portion, and it is possible to prevent damage to the substrate 2 caused by bending of the substrate 2.

On the other hand, when using a material capable of reducing adhesion such as Teflon coated on the surface of the sealing member (O), it is possible to arrange one sealing member (O) having a circular cross section in the sealing member receiving portion 522. .

10 is a view showing a space S formed between the first fixing portion 52 and the substrate 2 of the present invention (an enlarged view of part C in FIG. 6). In FIG. 10, the illustration of the depression 526 described above will be omitted.

Referring to FIG. 10, as described above, a space may be formed between the first fixing part 52 and the rear surface of the substrate 2. In the present invention, the space is defined as a space (S).

As described above, gas may be injected into the space S through the gas supply hole 524, and gas may be discharged from the space S through the gas discharge hole 525.

FIG. 11 is an enlarged view showing a part of the second fixing part 54 of the substrate fixing part 50 of the present invention (an enlarged view of part D of FIG. 6). 11, the illustration of the substrate 2 will be omitted.

Referring to FIG. 11, the second fixing portion 54 includes an edge portion 542 formed on the inner circumferential surface of the second fixing portion 54 and a mask area formed at an end of the edge portion 542. 544).

As described above, the active region A of the substrate 2 is the second fixing portion 54 of the rim portion 542 provided on the inner circumferential surface of the second fixing portion 54 according to the use of the substrate 2. It can be set in various ways by adjusting the protruding thickness toward the center.

The thickness (height) of the edge portion 542 in the vertical direction is so that the deposition material deposited on the active region A of the substrate 2 is smoothly deposited, and the second fixing portion 54 is easily processed and manufactured. It is desirable to be formed with a minimum thickness in consideration of cost and the like.

Referring to the enlarged view of FIG. 11, the mask region 544 is a portion that contacts the end of the active region A of the substrate 2. At this time, the thickness (height) of the mask region 544 in the vertical direction is so that smooth deposition of the evaporation material to the active region A is achieved, and the ease of processing and the manufacturing cost of the second fixing portion 54 are reduced. It is desirable to be formed with a minimum thickness in consideration.

Meanwhile, when the evaporation material is deposited on the active region A of the substrate 2, it may be bonded to the mask region 544 in the form of a slope, resulting in a problem of lowering the deposition efficiency.

In order to prevent such a problem, in the embodiment of the present invention, the mask region 544 may be formed to be inclined toward the center of the second fixing part 54 with respect to the lower surface of the edge part 542.

As an example, as shown in the enlarged view of FIG. 11, the inclination angle of the mask area 544 is greater than 90 degrees in the direction of the center of the second fixing part 54 with respect to the lower surface of the edge part 542. Can be set to

Through the above configuration, the deposition material deposited on the active area A of the substrate 2 is minimized to adhere to the mask area 544 in the form of a slope, so that the substrate 2 is attached to the second fixing part after the scintillator deposition process. It can be more easily separated from (54), and can increase the deposition efficiency of the scintillator.

12 is a diagram showing the configuration of a gas inflow control unit 60 provided in the substrate deposition apparatuses 100 and 200 of the present invention. In FIG. 12, detailed configurations of the evaporation source 1, the rotating parts 20 and 120, and the orbiting part 130 described above will be briefly illustrated or omitted.

In the substrate deposition apparatuses 100 and 200 of the present invention, by supplying a gas to the space S described above, heat transferred to the substrate 2 by convection using the gas supplied to the space S as a medium is reduced. This control method is called backside cooling.

In the present invention, the heat transfer method from the above-described substrate temperature control unit 40 to the substrate fixing unit 50 and the substrate 2 fixed to the substrate fixing unit 50 includes radiation and conduction in addition to convection.

However, in the case of heat transfer by radiation, the temperature of the substrate 2 can be increased through radiant heat, but in the case of heat transfer by radiation, it is impossible to lower the temperature of the substrate 2, and precise temperature control is difficult. have.

In addition, in the case of heat transfer by conduction, due to the flatness of the surfaces of the substrate temperature control unit 40 and the substrate fixing unit 50, which are metal materials, the contact between the metal molecules is the substrate temperature control unit 40 and the substrate fixing unit 50. It is about 1% of the total surface area of the substrate, and when an electrostatic chuck (ESC) is used to increase the abutting portion between the substrate temperature control unit 40 and the substrate fixing unit 50, the TFT area on the substrate 2 (Thin film transistor area) is highly likely to be damaged.

Accordingly, in the present invention, not only the radiation or conduction described above, but also the heat transferred to the substrate 2 by convection is controlled by supplying gas to the space S, using the gas supplied to the space S as a medium.

In general, the substrate 2 may be made of a glass panel, and the soft substrate 2 has a very high risk of being damaged even under a small pressure.

In order to enable the scintillator deposition process in the present invention, it is preferable to make the inside of the chamber 10 in a vacuum state in advance. At this time, if the space (S) is also not made into a vacuum state in the step of preliminarily making the interior of the chamber 10 a vacuum state, the substrate 2 may be damaged due to the pressure difference between the space (S) and the interior of the chamber 10. have. However, in the embodiment of the present invention, when the substrate 2 is not soft, it is not necessary to form the space S in a vacuum state as described above.

In the step of preliminarily making the interior of the chamber 10 into a vacuum state, pumping to make both the interior of the chamber 10 and the space S in a vacuum state while the interior of the chamber 10 and the space S are separated. ), there is a problem in that it is necessary to control the pumping speed of both the interior of the chamber 10 and the space (S).

In order to prevent such a problem, it is preferable to make the space S and the inner space of the chamber 10 in a connected state when making the inside of the chamber 10 into a vacuum state.

Referring to FIG. 12, the gas inflow control unit 60 is connected to the space (S) through the above-described gas discharge hole 525 and performs pumping to the space (S) at a constant pumping speed, and the gas The pressure of the gas supply source 62 connected to the space S through the supply hole 524 and receiving gas supplied to the space S, and the gas connected to the gas supply source 62 and supplied to the space S It includes a pressure controller (63, pressure controller) to regulate.

At this time, the pressure controller 63 may be formed between the gas supply source 62 and the space (S). Further, the gas accommodated in the gas source 62 may be an inert gas, preferably helium.

In addition, the gas inflow control unit 60 includes a first valve 64 provided between the chamber 10 and the space S, a second valve 65 provided between the chamber 10 and the pump 61, and , A third valve 66 provided between the pump 61 and the space S, and a fourth valve 67 provided between the space S and the pressure controller 63 are further included. As an example, the first valve 64, the second valve 65, the third valve 66, and the fourth valve 67 may be normally open valves, but are not limited thereto.

Meanwhile, the second valve 65 may be provided with a plurality of valves having different flow rates of air discharged from the inside of the chamber 10, and the second valve 65 may be provided as a pump. In addition, the third valve 66 may also be provided with a plurality of valves having different flow rates of gas discharged from the space 66.

In the embodiment of the present invention, the driving of the gas inflow and outflow control unit 60 may be controlled by the main controller 68.

The gas outflow control unit 60 has a first gas discharge line 601 connected to one side to the chamber 10 and the other side to or separated from the space S, and one side connected to the chamber 10 and the other side. A second gas discharge line 602 connected to or separated from the pump 61, a third gas discharge line 603 connected or separated from one side to the pump 61 and the other side connected to or separated from the space (S), and one side It further includes a gas supply line 604 connected to the gas supply source 62 and the other side is connected to or separated from the space (S).

At this time, the first valve 64 is provided on the first gas discharge line 601, the second valve 65 is provided on the second gas discharge line 602, and on the third gas discharge line 603 A third valve 66 may be provided, and a pressure controller 63 and a fourth valve 67 may be provided on the gas supply line 604.

The first gas discharge line 601 may be connected to or separated from the space S through the gas inflow path 26 described above according to the opening and closing of the first valve 64. As an example, the first gas discharge line 601 may be connected to the gas inlet path 26 when the first valve 64 is opened.

The second gas discharge line 602 may be connected to or separated from the pump 61 according to the opening and closing of the second valve 65. As an example, the second gas discharge line 602 may be connected to the pump 61 when the second valve 65 is opened.

The third gas discharge line 603 may be connected to or separated from the space S through the gas discharge path 27 described above according to the opening and closing of the third valve 66. As an example, the third gas discharge line 603 may be connected to the gas discharge path 27 when the third valve 66 is opened.

In addition, the gas supply line 604 may be connected to or separated from the space S through the gas inlet path 26 according to the opening and closing of the fourth valve 67. As an example, the gas supply line 604 may be connected to the gas inlet path 26 when the fourth valve 67 is opened.

In the step of preliminarily making the interior of the chamber 10 in a vacuum state for evaporation material deposition, the first valve 64 and the second valve 65 are used to form the space S and the interior of the chamber 10 in a vacuum state. ) Can be opened. In this case, the third valve 66 and the fourth valve 66 may be in a closed state.

When the first valve 64 and the second valve 65 are opened, the air in the chamber 10 is transferred to the outside of the chamber 10 through the first gas discharge line 601 and the second gas discharge line 602. Can be discharged.

In detail, while the first valve 64 is opened, the first gas discharge line 601 may be connected to the gas inlet path 26.

Accordingly, the first gas discharge line 601 is connected to the space S through the gas inlet path 26, so that the space S and the inner space of the chamber 10 may be connected.

At this time, the air in the chamber 10 may be discharged to the outside of the chamber 10 through the first gas discharge line 601, and the air in the space S may also be discharged through the gas inlet path 26. It can be discharged to the outside.

In addition, as the second valve 65 is opened, the second gas discharge line 602 can be connected to the pump 61, and the air in the chamber 10 is also through the second gas discharge line 602. 10) can be discharged to the outside.

As described above, since the space (S) and the inner space of the chamber 10 are connected, both the space (S) and the interior of the chamber 10 can be vacuumed without elaborate pumping control, and between the space (S) and the interior of the chamber 10 It is possible to prevent damage to the substrate 2 due to the pressure difference of.

When the chamber 10 and the space S are in a vacuum state according to the above steps, it is necessary to separate the inner space and the space S of the chamber 10 for application of the above-described backside cooling. desirable.

After the chamber 10 and the space S are in a vacuum state, the first valve 64 and the second valve 65 are closed during the scintillator deposition process, and the third valve 66 and the fourth valve ( 67) can be opened.

In this case, the first gas discharge line 601 may be separated from the space S, and the second gas discharge line 602 may be separated from the pump 61.

Accordingly, the inner space and the space S of the chamber 10 may be separated.

For heat transfer by convection using gas, a specific condition must be satisfied, and in this case, it is preferable that the pressure of the gas is greater than or equal to a specific pressure value so that a viscous flow can be generated. In addition, even if a viscous flow is generated, the heat transfer efficiency is different for each gas used.

As described above, the gas supplied to the space (S) of the present invention may preferably be helium, and helium has the best heat transfer efficiency as a fine particle having a small mass and little reactivity after hydrogen on the periodic table of the elements. .

Helium is a very fine particle, and can leak out even through very small gaps. The gap may be a gap between the first fixing part 52 and the substrate 2 described above. Although it is difficult to control the helium outflow through such a gap, it is possible to minimize the effect of outflow through the gap by allowing outflow through a separate artificial method.

As described above, in order to allow the outflow of helium by a separate artificial method, the pump 61 may be connected to the space S as shown in FIG. 12 to continuously pump.

As an example, the pump 61 may be a roughing pump, and a speed at which the pump 61 pumps into the space S may be kept constant.

Accordingly, it is possible to minimize the effect of the irregular outflow of helium through the gap by allowing the helium to flow out of the space (S) at a constant pumping speed through the pumping operation of the pump 61.

In the state where the third valve 66 and the fourth valve 67 are each open, the pump 61 can be connected to the space S, and the gas supply source 62 and the pressure controller 63 are also space S. Can be connected with.

Specifically, while the third valve 66 is opened, the third gas discharge line 603 may be connected to the gas discharge path 27. In this case, the third gas discharge line 603 may be connected to the space S through the gas discharge path 27.

Accordingly, the pump 61 may be connected to the space (S). At this time, the pump 61 is in a state capable of pumping into the space (S).

When the fourth valve 67 is open, the gas supply line 604 may be connected with the gas inlet path 26. In this case, the gas supply line 604 may be connected to the space S through the gas inlet path 26.

Accordingly, the gas supply source 62 and the pressure controller 63 are connected to the space (S), and the pressure controller 63 is discharged from the gas supply source 62 to control the pressure of the gas supplied to the space (S). State.

The gas discharged from the gas supply source 62 may be supplied to the space S through the gas supply hole 524 through the gas inlet path 26 described above after the pressure is adjusted through the pressure controller 63.

In addition, the gas in the space S due to the pumping operation of the pump 61 may be discharged to the outside through the gas discharge path 27 through the gas discharge hole 525 described above.

In the state where the inner space of the chamber 10 and the space (S) are separated, the pressure controller 63 is in a state in which the pump 61 pumps into the space (S) at a constant pumping speed (maintaining the same pumping speed). In the state), the pressure of the gas (helium) discharged from the gas supply source 62 and supplied to the space S may be adjusted by reading the pressure value of the space S. Accordingly, the pressure inside the space S may be kept constant during the scintillator deposition process.

Meanwhile, helium is an inert gas having a very small particle size as described above, and even if helium is supplied to the space (S), the internal pressure formed by the supplied helium may be close to vacuum (pressure range of helium: 0.01 Torr). ~ 100 Torr).

Accordingly, in the present invention, as described above, the sealing member O is in surface contact with the substrate 2 and by using the gas inflow control unit 60, the internal space and the space (S) of the chamber 10 in a vacuum state Since the pressure difference between) can be minimized, damage to the substrate 2 does not occur during the scintillator deposition process.

13 is a flowchart showing a deposition method of a deposition material using the substrate deposition apparatus 100 and 200 of the present invention. For the deposition method, a detailed configuration for implementing each step is disclosed in the substrate deposition apparatuses 100 and 200 described with reference to FIGS. 1 to 12, so a detailed description thereof will be omitted.

Referring to FIG. 13, a deposition method of a deposition material using the substrate deposition apparatus 100 and 200 described above is as follows.

First, the substrate 2 is fixed to the substrate fixing unit 50 provided in the substrate deposition apparatus 100 and 200 (step S1).

Next, the space S and the inner space of the chamber 10 are connected (step S2).

After connecting the space S and the inner space of the chamber 10, the space S and the inner space of the chamber 10 are formed in a vacuum state (step S3).

Next, in the deposition material deposition process, the space S and the inner space of the chamber 10 are separated to apply backside cooling (step S4). At this time, pumping is performed in the space S at a constant pumping speed by the pumping operation of the pump 61 described above.

When the space S and the inner space of the chamber 10 are separated, gas is supplied to the space S (step S5).

In this case, the pressure of the gas supplied to the space S is adjusted by reading the pressure value of the space S. This is implemented by the pressure controller 63 as described above.

Thereafter, the substrate is heated by controlling the temperature of the substrate temperature control unit 40 coupled to the substrate fixing unit 50 (step S6), and a deposition material evaporated from the evaporation source 1 is deposited on the substrate 2. (Step S7).

The above description is merely illustrative of the technical idea of the present invention, and those of ordinary skill in the technical field to which the present invention belongs can make various modifications, changes, and substitutions within the scope not departing from the essential characteristics of the present invention. will be. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical idea of the present invention, but are for illustrative purposes, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings. . The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: substrate deposition apparatus
10: chamber
20, 120: magnetic field
40: substrate temperature control unit
50: substrate fixing part
60: gas inflow control unit
130: idle part

Claims (25)

In the substrate fixing apparatus for fixing the substrate such that the evaporation material evaporated from at least one evaporation source is deposited on the substrate,
A substrate temperature control unit that transfers heat to the substrate; And
Including; a substrate fixing unit coupled to one side of the substrate temperature control unit, fixing the substrate,
The substrate fixing part fixes the substrate so that the front surface of the substrate is exposed in the direction of the evaporation source, and a space is formed between the substrate fixing part and the rear surface of the substrate. The method of claim 1,
The substrate temperature control unit,
A first substrate temperature control unit,
An oil flow unit provided inside the first substrate temperature control unit and including a flow path through which oil introduced from an oil supply source circulates, and
And a second substrate temperature control unit coupled to one side of the first substrate temperature control unit. The method of claim 2,
The flow path is,
An oil inlet flow line through which the oil flows,
It includes an oil outflow flow line through which the oil is discharged,
The oil inflow flow line and the oil outflow flow line are arranged in a crossover arrangement. The method of claim 2,
The substrate fixing part,
A first fixing part to which the second substrate temperature control part is coupled to one side,
And a second fixing part coupled to the other side of the first fixing part and formed to expose the front surface of the substrate,
The substrate fixing apparatus, wherein the substrate is fixed between the first fixing part and the second fixing part. The method of claim 4,
The first fixing part,
A groove formed along the inner circumference of the first fixing part,
A sealing member accommodating portion spaced apart from the groove portion and provided inside the groove portion and formed along an inner circumference of the first fixing portion to accommodate at least one sealing member;
At least one guide pin formed between the groove portion and the sealing member accommodating portion to guide the seating of the substrate to the first fixing portion;
A gas supply hole through which gas is injected into the space, and
And a gas discharge hole through which gas is discharged from the space. The method of claim 5,
The sealing member seals a gap between the substrate and the first fixing portion, and is in surface contact with the substrate. The method of claim 5,
An edge portion of a certain area is set along the outer edge portion of the substrate on the substrate,
And the edge portion is disposed between the second fixing portion and the sealing member to apply stress to the sealing member. The method of claim 4,
The second fixing part,
An edge portion formed on the inner circumferential surface of the second fixing portion,
Includes a mask region formed at an end of the edge portion,
The mask region is formed to be inclined toward a central portion of the second fixing portion with respect to a lower surface of the edge portion. The method of claim 4,
A substrate fixing apparatus, characterized in that the total weight of the first fixing part and the second fixing part is kept the same. The method of claim 1,
The substrate fixing device is coupled to a rotation axis of a rotation unit partially accommodated in a chamber having the evaporation source therein, and rotates according to the rotation of the rotation axis. The method of claim 10,
The evaporation source is provided at the lower end of the chamber,
The substrate fixing device, characterized in that located above the evaporation source. In a substrate deposition apparatus for depositing a deposition material evaporated from at least one evaporation source on a substrate,
A chamber accommodating the evaporation source therein;
A revolving part accommodated in the chamber and rotated about an orbital axis;
A plurality of rotating parts coupled to the orbiting part and revolving according to the rotation of the orbiting part; And
Including; the substrate fixing device according to claim 1,
The substrate fixing device is a substrate deposition apparatus, characterized in that rotated by being coupled to a rotation shaft provided in the rotation unit. The method of claim 12,
The substrate fixing unit provided in the chamber and the substrate fixing device is connected to a gas inflow control unit,
A substrate deposition apparatus, characterized in that a space is formed between the substrate fixing part and the rear surface of the substrate. The method of claim 13,
The gas inflow control unit forms the space and the chamber in a vacuum state, and then controls and injects the gas into the space so that the space becomes a constant pressure during the deposition process. The method of claim 13,
The gas inflow and outflow control unit,
A pump that pumps at a constant pumping speed in the space,
A gas supply source accommodating the gas supplied to the space, and
And a pressure controller connected to the gas supply source and controlling a pressure of gas supplied to the space. The method of claim 15,
The pressure controller,
In a state in which the pump pumps into the space at a constant pumping speed, the pressure of the gas supplied to the space is adjusted by reading a pressure value of the space. The method of claim 15,
The gas inflow and outflow control unit,
A first valve provided between the chamber and the space,
A second valve provided between the chamber and the pump,
A third valve provided between the pump and the space, and
A substrate deposition apparatus further comprising a fourth valve provided between the space and the pressure controller. The method of claim 17,
When forming the space and the chamber in a vacuum state, the first valve and the second valve are opened,
During the deposition process, the first valve and the second valve are closed, and the third and fourth valves are opened. The method of claim 15,
The substrate deposition apparatus, characterized in that the gas accommodated in the gas source is an inert gas. The method of claim 12,
The revolving part includes a revolving part frame to which a plurality of the rotating parts are coupled,
The revolving shaft is coupled to the central part of the revolving part frame,
The substrate deposition apparatus, wherein the revolving part frame is rotated according to the rotation of the revolving shaft. The method of claim 20,
The rotating part is coupled to the rotating part frame through a tilting axis,
The substrate deposition apparatus, wherein the rotating part is individually axially rotated with respect to the rotating part frame around the tilting axis. The method of claim 12,
The evaporation source is provided at the lower end of the chamber,
The substrate deposition apparatus, characterized in that the substrate fixing device is located above the evaporation source. In the deposition method of a deposition material using the substrate deposition apparatus according to claim 12,
Fixing a substrate to a substrate fixing unit provided in the substrate deposition apparatus;
Connecting the space and the inner space of the chamber;
Forming the space and the inner space of the chamber in a vacuum state;
Separating the space and the inner space of the chamber;
Supplying gas to the space;
Heating the substrate by controlling a temperature of a substrate temperature control unit coupled to the substrate fixing unit; And
And depositing the deposition material evaporated from a plurality of evaporation sources on the substrate. The method of claim 23,
And performing pumping into the space at a constant pumping rate while the space and the inner space of the chamber are separated. The method of claim 23,
In the step of supplying gas to the space, the pressure of the gas supplied to the space is adjusted by reading a pressure value of the space.

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