KR20210028858A - Direct conversion x-ray detector and method for manufacturing the same - Google Patents
Direct conversion x-ray detector and method for manufacturing the same Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011247 coating layer Substances 0.000 claims abstract description 8
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 claims abstract 3
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 22
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 10
- 229940071870 hydroiodic acid Drugs 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 239000011812 mixed powder Substances 0.000 claims description 5
- 238000007606 doctor blade method Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- VRGUHZVPXCABAX-UHFFFAOYSA-N methyllead Chemical compound [Pb]C VRGUHZVPXCABAX-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
본 발명은 직접 변환 X선 검출기 및 이의 제조방법 에 관한 것이다. The present invention relates to a direct conversion X-ray detector and a method of manufacturing the same.
X선을 전기 신호로 변환하는 방식은, X선을 직접 전기 신호로 변환하는 직접 변환 방식(Direct conversion)과 X선을 가시광선으로 변환한 뒤에 전기 신호로 변환하는 간접 변환 방식(Indirect conversion)으로 나눌 수 있다.The methods of converting X-rays into electrical signals include direct conversion, which converts X-rays directly into electrical signals, and indirect conversion, which converts X-rays into visible light and then converts them into electrical signals. I can share.
간접 변환 방식은 섬광체(scintillator)를 이용하여 X선을 가시광선으로 변환한 뒤에 디지털 이미지 센서를 이용하여 영상을 획득하는 방법으로 현재 가장 널리 사용되고 있다. 간접 변환 방식의 경우, 용액 공정 또는 증착 공정이 가능한 이점이 있으나, 방사선 흡수 효율을 높이기 위해서는 섬광체가 두꺼워야 한다. 두꺼운 섬광체를 사용하는 경우 빛의 산란이 증가하기 때문에, X선 검출시 해상도가 저하되며 플렉서블(flexible)한 형태로 제작이 불가능하다.The indirect conversion method is a method of obtaining an image using a digital image sensor after converting X-rays into visible light using a scintillator, and is currently most widely used. In the case of the indirect conversion method, there is an advantage that a solution process or a deposition process is possible, but in order to increase the radiation absorption efficiency, the scintillator must be thick. When a thick scintillator is used, light scattering increases, so the resolution decreases when X-rays are detected, and it is impossible to manufacture in a flexible form.
직접 변환 방식은 광변환 효율을 높이기 위해 광전도체를 단결정으로 성장시키기 때문에 플라스틱 기판에 코팅하기 어려운 문제가 있다. 또한 원하는 형태로 패터닝이 불가능하므로 전자 소자와 결합된 형태의 디지털 방사선 검출기 제작에 한계가 있으며, 취성이 커서 플렉서블한 구조로 제작할 수 없다.The direct conversion method has a problem that it is difficult to coat a plastic substrate because a photoconductor is grown into a single crystal in order to increase light conversion efficiency. In addition, since patterning in a desired shape is impossible, there is a limitation in manufacturing a digital radiation detector in a form combined with an electronic device, and it cannot be manufactured in a flexible structure due to its brittleness.
이에 본 발명의 발명자들은 기존의 두껍고 딱딱한 재료가 아닌, 액상 공정으로 제작할 수 있는 직접 변환 X선 검출기용 광전도체를 개발하였다. Accordingly, the inventors of the present invention have developed a photoconductor for a direct conversion X-ray detector that can be manufactured by a liquid phase process rather than a conventional thick and hard material.
본 발명의 목적은 광전도체를 원하는 형태로 패터닝하여 전자 소자와의 집적화가 가능하고, 동시에 유연하고 신축성 있는 형태의 X선 검출기 및 이의 제조방법을 제공하는 것이다. It is an object of the present invention to provide an X-ray detector and a method of manufacturing the same, enabling integration with electronic devices by patterning a photoconductor into a desired shape, and at the same time having a flexible and stretchable shape.
본 발명의 일 측면에 따르면, 기판 및 상기 기판 상에 메틸암모늄요오드화납(CH3NH3PbI3, MAPbI3)을 함유하는 코팅층을 포함하는 직접 변환 X선 검출기가 제공된다.According to an aspect of the present invention, there is provided a direct conversion X-ray detector comprising a substrate and a coating layer containing lead methylammonium iodide (CH 3 NH 3 PbI 3 , MAPbI 3) on the substrate.
본 발명의 다른 측면에 따르면, 용매에 요오드화메틸암모늄(CH3NH3I)과 요오드화납(PbI2)의 혼합 분말을 투입하여 메틸암모늄요오드화납(CH3NH3PbI3) 슬러리 용액을 제조하는 단계 및 상기 메틸암모늄요오드화납(CH3NH3PbI3) 슬러리 용액을 기판 상에 도포하는 단계를 포함하는 직접 변환 X선 검출기 제조방법이 제공된다.According to another aspect of the present invention, a mixed powder of methyl ammonium iodide (CH 3 NH 3 I) and lead iodide (PbI 2 ) is added to a solvent to prepare a lead methyl ammonium iodide (CH 3 NH 3 PbI 3) slurry solution. There is provided a direct conversion X-ray detector manufacturing method comprising the step of applying the lead methyl ammonium iodide (CH 3 NH 3 PbI 3) slurry solution on a substrate.
본 발명에 따르면 유연하고 신축성 있는 형태의 MAPbI3 광전도체를 제조할 수 있다. MAPbI3 광전도체는 전자 소자와 집적화를 통해 디지털 X선 검출기를 제조할 수 있을 뿐만 아니라, 원하는 형태로 X선 검출기를 제조할 수 있다. According to the present invention, it is possible to manufacture a flexible and stretchable MAPbI 3 photoconductor. The MAPbI 3 photoconductor can not only manufacture a digital X-ray detector through integration with an electronic device, but also manufacture an X-ray detector in a desired shape.
도 1은 본 발명의 일 실시 형태에 따르는 MAPbI3 광전도체를 포함하는 직접 변환 X선 검출기를 개략적으로 나타낸 도면이다.
도 2는 X선 노출 시간에 따라, 본 발명의 일 실시 형태에 따르는 MAPbI3 광전도체에서 생성된 전류를 나타낸 그래프이다.
도 3은 본 발명의 일 실시 형태에 따르는 MAPbI3 광전도체에서 측정된 전류량을 나타낸 그래프이다. MAPbI3 광전도체에서 측정된 전류량은 X선 발생시 타깃에 흘려주는 전류와 선형성을 갖는다. 1 is a diagram schematically showing a direct conversion X-ray detector including a MAPbI 3 photoconductor according to an embodiment of the present invention.
2 is a graph showing the current generated by the MAPbI 3 photoconductor according to an embodiment of the present invention according to the X-ray exposure time.
3 is a graph showing the amount of current measured in the MAPbI 3 photoconductor according to an embodiment of the present invention. The amount of current measured in the MAPbI 3 photoconductor has linearity with the current flowing to the target when X-rays are generated.
이하, 본 발명의 바람직한 실시 형태를 설명한다. 그러나 본 발명의 실시 형태는 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 이하 설명하는 실시 형태로 한정되는 것은 아니다.Hereinafter, preferred embodiments of the present invention will be described. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below.
본 발명의 일 측면에 따르면, 기판 및 상기 기판 상에 메틸암모늄요오드화납(CH3NH3PbI3) (이하, MAPbI3라고도 한다)을 함유하는 코팅층을 포함하는 직접 변환 X선 검출기가 제공된다. MAPbI3은 광전도체로써 조사된 X선을 검출하여 전기 신호로 변환한다. According to an aspect of the present invention, there is provided a direct conversion X-ray detector comprising a substrate and a coating layer containing lead methylammonium iodide (CH 3 NH 3 PbI 3 ) (hereinafter, also referred to as MAPbI 3) on the substrate. MAPbI 3 is a photoconductor that detects irradiated X-rays and converts them into electrical signals.
일반적으로 직접 변환 X선 검출기의 경우 광전도체를 단결정으로 성장시키기 때문에 플라스틱 기판에 코팅하기 어려울 뿐만 아니라, 원하는 형태로 패터닝이 불가능한 문제가 있다. In general, in the case of a direct conversion X-ray detector, since the photoconductor is grown into a single crystal, it is difficult to coat a plastic substrate, and patterning in a desired shape is impossible.
그러나, 본 발명에 따르면 액상 공정에 의해 X선 검출기용 광전도체를 제조할 수 있으며, 그 결과로 유연하고 신축성 있는 형태의 X선 검출기용 광전도체가 제공된다. However, according to the present invention, a photoconductor for an X-ray detector can be manufactured by a liquid phase process, and as a result, a photoconductor for an X-ray detector in a flexible and elastic form is provided.
도 1은 본 발명의 일 실시 형태에 따르는 MAPbI3 광전도체를 포함하는 직접 변환 X선 검출기를 개략적으로 나타낸 것이다. 본 발명에서 기판으로는 유리, 플라스틱, 탄성 중합체, 종이 등 공지의 것을 사용할 수 있으며, 그 종류는 특별히 제한되지 않는다. 도 1과 같이 MAPbI3 코팅층은 투명 도전막(ITO, Indium Tin Oxide) 상에 적층된 것일 수 있다. 1 schematically shows a direct conversion X-ray detector including a MAPbI 3 photoconductor according to an embodiment of the present invention. In the present invention, known substrates such as glass, plastic, elastomer, and paper may be used, and the kind is not particularly limited. As shown in FIG. 1, the MAPbI 3 coating layer may be stacked on a transparent conductive layer (ITO, Indium Tin Oxide).
본 발명의 일 실시예에서 MAPbI3 광전도체는 다결정 구조인 것이 바람직하다. MAPbI3가 다결정 구조를 갖는 경우 액상 공정으로 광전도체를 제조할 수 있으며, 기판 상에 원하는 두께로 코팅할 수 있다. In an embodiment of the present invention, it is preferable that the MAPbI 3 photoconductor has a polycrystalline structure. When MAPbI 3 has a polycrystalline structure, a photoconductor can be manufactured by a liquid phase process, and can be coated on a substrate to a desired thickness.
본 발명의 일 실시 형태에서 MAPbI3 코팅층의 두께는 100㎛ 이상, 바람직하게는 100㎛ 내지 1,000㎛일 수 있다. 일반적으로 MAPbI3 결정 하나가 약 30㎛의 크기를 가지므로, 균일한 광전도체 막을 형성하기 위해서는 두께가 최소 100㎛이 되어야 한다. 반면, 최대 두께는 특별히 제한되지 않으나, 흡수한 X선 또는 가시광선 등에 의해 생성된 전하들의 산란이 발생하여 X선 변환 효율이 저하되는 것을 방지하기 위해 코팅층 두께를 1,000㎛ 이하로 할 수 있다. In one embodiment of the present invention, the thickness of the MAPbI 3 coating layer may be 100 μm or more, preferably 100 μm to 1,000 μm. In general, since one MAPbI 3 crystal has a size of about 30 μm, the thickness must be at least 100 μm in order to form a uniform photoconductor film. On the other hand, the maximum thickness is not particularly limited, but the thickness of the coating layer may be 1,000 μm or less in order to prevent deterioration of X-ray conversion efficiency due to scattering of electric charges generated by absorbed X-rays or visible rays.
본 발명의 다른 측면에 따르면, 용매에 요오드화메틸암모늄(CH3NH3I)과 요오드화납(PbI2)의 혼합 분말을 투입하여 MAPbI3 슬러리 용액을 제조하는 단계 및 상기 MAPbI3 슬러리 용액을 기판 상에 도포하는 단계를 포함하는 직접 변환 X선 검출기 제조방법이 제공된다. According to another aspect of the present invention, preparing a MAPbI 3 slurry solution by adding a mixed powder of methyl ammonium iodide (CH 3 NH 3 I) and lead iodide (PbI 2 ) to a solvent, and preparing the MAPbI 3 slurry solution on a substrate. Direct conversion X-ray detector manufacturing method comprising the step of applying to is provided.
이때 요오드화메틸암모늄은 메틸아민과 요오드화수소산의 반응에 의해 제조된 것일 수 있다. 메틸아민은 알코올계 용매, 바람직하게는 에탄올에 용해된 것일 수 있으며, 요오드화수소산의 경우 증류수에 희석된 것일 수 있다. At this time, methyl ammonium iodide may be prepared by reaction of methylamine and hydroiodic acid. Methylamine may be dissolved in an alcohol-based solvent, preferably ethanol, and in the case of hydroiodic acid, it may be diluted in distilled water.
요오드화메틸암모늄을 제조하는 단계에서 투입되는 메틸아민(CH3NH2)과 요오드화수소산(HI)의 부피비는 1:1.45 내지 1:1.55 일 수 있으나 이에 한정되지 않는다. 반응 후 용매를 제거하여 요오드화메틸암모늄을 석출하고, 세척후 건조시켜 요오드화메틸암모늄을 분말 형태로 제조할 수 있다. The volume ratio of methylamine (CH 3 NH 2 ) and hydroiodic acid (HI) introduced in the step of preparing methyl ammonium iodide may be 1:1.45 to 1:1.55, but is not limited thereto. After the reaction, the solvent is removed to precipitate methyl ammonium iodide, washed and dried to prepare methyl ammonium iodide in powder form.
MAPbI3 슬러리 용액을 제조하는 단계에서, 요오드화메틸암모늄과 요오드화납의 혼합 몰질량비는 예를 들어 1:1일 수 있으며, 이때 최적의 MAPbI3 단결정 크기 및 결정화도를 나타낸다. 요오드화메틸암모늄과 요오드화납의 혼합 분말은 용매에 투입되고, 반응에 의해 MAPbI3 슬러리 용액이 제조된다. 이때 MAPbI3 슬러리 용액은 대기압 하에서 보관할 수 있으며, 사용 시에는, 예를 들어 80℃에서 가열하면서 흔들어 사용할 수 있다.In the step of preparing the MAPbI 3 slurry solution, the mixed molar mass ratio of methyl ammonium iodide and lead iodide may be, for example, 1:1, and at this time, the optimum MAPbI 3 single crystal size and crystallinity are shown. The mixed powder of methyl ammonium iodide and lead iodide is added to a solvent, and a MAPbI 3 slurry solution is prepared by reaction. At this time, the MAPbI 3 slurry solution may be stored under atmospheric pressure, and when used, it may be used by shaking while heating at 80°C.
한편, 본 발명의 일 실시 형태에서, MAPbI3 슬러리 용액은 닥터블레이드 코팅(doctor blade coating), 스핀 코팅(spin coating) 또는 스프레이 코팅(spray coating)의 방법으로 기판 상에 도포될 수 있다. 이때 도포 두께는 100㎛ 이상, 바람직하게는 100㎛ 내지 1,000㎛일 수 있다.Meanwhile, in an embodiment of the present invention, the MAPbI 3 slurry solution may be applied on the substrate by a method of doctor blade coating, spin coating, or spray coating. In this case, the coating thickness may be 100 μm or more, preferably 100 μm to 1,000 μm.
실시예Example
이하, 본 발명의 실시예에 대해 상세히 설명한다. 하기 실시예는 본 발명의 이해를 위한 것일 뿐, 본 발명을 한정하는 것은 아니다.Hereinafter, embodiments of the present invention will be described in detail. The following examples are only for understanding the present invention, and do not limit the present invention.
1. 직접 변환 X선 검출기용 광전도체 제조1. Manufacture of photoconductor for direct conversion X-ray detector
(1) 요오드화메틸암모늄(CH3NH3I) 분말 제조(1) Preparation of methyl ammonium iodide (CH 3 NH 3 I) powder
에탄올에 용해된 40 중량%의 메틸아민 27.8mL, 증류수에 57%로 희석된 요오드화수소산(HI) 30mL를 ice bath (0℃) 에 투입하고, 2시간 동안 교반하면서 반응시켰다. Rotary evaporator를 이용하여 50℃ 에서 1시간 동안 고진공에서 용매를 제거하여 요오드화메틸암모늄(CH3NH3I)을 석출하였다. 석출된 분말을 디에틸에테르(diethyl ether)로 3회 진공 여과시켜 세척하고, 60℃ 오븐에서 진공상태로 24 시간 동안 건조시켜 요오드화메틸암모늄 분말을 제조하였다.27.8 mL of 40 wt% methylamine dissolved in ethanol and 30 mL of hydroiodic acid (HI) diluted to 57% in distilled water were added to an ice bath (0° C.) and reacted with stirring for 2 hours. Methyl ammonium iodide (CH 3 NH 3 I) was precipitated by removing the solvent in high vacuum at 50° C. for 1 hour using a rotary evaporator. The precipitated powder was vacuum filtered three times with diethyl ether, washed, and dried in a vacuum oven at 60° C. for 24 hours to prepare methyl ammonium iodide powder.
(2) MAPbI3 광전도체 제조(2) MAPbI 3 photoconductor manufacturing
요오드화메틸암모늄과 요오드화납(PbI2)을 1:1 몰질량비로 혼합한 후, 밀폐 용기에서 혼합 분말 농도가 78 중량%가 되도록 γ-Butyrolactone 용매와 혼합하였다. 이후 90℃ 오븐에서 30분 마다 흔들어 주면서 6시간 동안 가열한 후 24시간 동안 추가로 가열하여 MAPbI3 슬러리 용액을 제조하였다. Methyl ammonium iodide and lead iodide (PbI 2 ) were mixed in a 1:1 molar mass ratio, and then mixed with a γ-butyrolactone solvent so that the concentration of the mixed powder was 78% by weight in a sealed container. Thereafter, the mixture was heated in an oven at 90° C. for 6 hours while shaking every 30 minutes, and then further heated for 24 hours to prepare a slurry solution of MAPbI 3.
2. 직접 변환 X선 검출기 제조2. Direct conversion X-ray detector manufacturing
1.에서 제조된 MAPbI3 슬러리 용액을 80℃에서 가열하면서 흔들어준 후, 닥터블레이드 코팅(Doctor blade coating) 의 방법으로 투명 도전막(ITO) 상에 도포하고 120℃에서 90분 동안 가열하여 직접 변환 X선 검출기를 제조하였다. After shaking while heating the MAPbI 3 slurry solution prepared in 1. at 80℃, apply it on the transparent conductive film (ITO) by the method of Doctor blade coating and heat it at 120℃ for 90 minutes to convert it directly. An X-ray detector was prepared.
3. 광전도체의 전류 변환 특성3. Current conversion characteristics of photoconductor
도 1과 같이 X선 검출기의 양면에 전극을 형성한 후, X선 조사 시 발생하는 전류를 측정하여 도 2 및 도 3에 나타내었다.After forming electrodes on both sides of the X-ray detector as shown in FIG. 1, current generated during X-ray irradiation was measured and shown in FIGS. 2 and 3.
도 2를 참조하면, 80 kV의 전압에서 발생된 X선에 5초 동안 노출시키는 경우, 시간에 따라 MAPbI3 광전도체에서 생성된 전류량이 증가함을 알 수 있다. 또한, 도 3을 참조하면, MAPbI3 광전도체에서 측정된 전류량은 X선 발생시 타깃에 흘려주는 전류와 매우 높은 선형성을 갖는 것을 알 수 있다. Referring to FIG. 2, when exposed to X-rays generated at a voltage of 80 kV for 5 seconds, it can be seen that the amount of current generated by the MAPbI 3 photoconductor increases with time. In addition, referring to FIG. 3, it can be seen that the amount of current measured by the MAPbI 3 photoconductor has very high linearity with the current flowing to the target when X-rays are generated.
본 발명에 따르는 MAPbI3 광전도체는 액상 공정에 의해 제조되어 보다 유연하고 높은 신축성을 갖는 광전도체를 제조할 수 있을 뿐만 아니라, X선 검출 성능 또한 우수함을 확인할 수 있다.It can be seen that the MAPbI 3 photoconductor according to the present invention is manufactured by a liquid phase process to produce a photoconductor having more flexibility and high elasticity, as well as excellent X-ray detection performance.
Claims (6)
상기 기판 상에 메틸암모늄요오드화납(CH3NH3PbI3)을 함유하는 코팅층
을 포함하는 직접 변환 X선 검출기.
Substrate and
A coating layer containing lead methylammonium iodide (CH 3 NH 3 PbI 3) on the substrate
Direct conversion X-ray detector comprising a.
상기 코팅층의 두께는 100㎛ 내지 1,000㎛인 직접 변환 X선 검출기.
The method of claim 1,
The thickness of the coating layer is 100㎛ to 1,000㎛ direct conversion X-ray detector.
상기 메틸암모늄요오드화납(CH3NH3PbI3) 슬러리 용액을 기판 상에 도포하는 단계
를 포함하는 직접 변환 X선 검출기 제조방법.
Injecting a mixed powder of methyl ammonium iodide (CH 3 NH 3 I) and lead iodide (PbI 2 ) to a solvent to prepare a lead methyl ammonium iodide (CH 3 NH 3 PbI 3 ) slurry solution, and
Applying the lead methyl ammonium iodide (CH 3 NH 3 PbI 3 ) slurry solution on a substrate
Direct conversion X-ray detector manufacturing method comprising a.
메틸암모늄요오드화납(CH3NH3PbI3) 슬러리 용액의 도포 두께는 100㎛ 내지 1,000㎛인 직접 변환 X선 검출기 제조방법.
The method of claim 3,
Methyl ammonium lead iodide (CH 3 NH 3 PbI 3 ) The coating thickness of the slurry solution is 100㎛ to 1,000㎛ direct conversion X-ray detector manufacturing method.
요오드화메틸암모늄(CH3NH3I)은 메틸아민(CH3NH2)과 요오드화수소산(HI)의 반응에 의해 제조된 것인 직접 변환 X선 검출기 제조방법.
The method of claim 3,
Methyl ammonium iodide (CH 3 NH 3 I) is a direct conversion X-ray detector manufacturing method that is prepared by the reaction of methylamine (CH 3 NH 2) and hydroiodic acid (HI).
메틸암모늄요오드화납(CH3NH3PbI3) 슬러리 용액은 닥터블레이드 코팅(doctor blade coating), 스핀 코팅(spin coating) 또는 스프레이 코팅(spray coating) 방법으로 기판 상에 도포되는 것인 직접 변환 X선 검출기 제조방법.
The method of claim 3,
Lead methylammonium iodide (CH 3 NH 3 PbI 3 ) slurry solution is applied on the substrate by doctor blade coating, spin coating, or spray coating. Detector manufacturing method.
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