CN109585489A - Flexible optoelectronic detector array and preparation method thereof - Google Patents
Flexible optoelectronic detector array and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of flexible optoelectronic detector arrays and preparation method thereof, wherein flexible optoelectronic detector array, comprising: substrate；Metallic circuit includes array polarizing electrode, is located at substrate；Surface parent/hydrophobicity handles auxiliary layer, is located on metallic circuit, has hollow area corresponding with array polarizing electrode position, exposes the array polarizing electrode；Photosensitive layer in surface parent/hydrophobicity processing auxiliary layer hollow area, and is located in array polarizing electrode；And encapsulated layer, it is located on photosensitive layer and surface parent/hydrophobicity processing auxiliary layer.The flexible optoelectronic detector array has good photo absorption property, electrical stability and bending resistance, does not have crosstalk between each array element pixel, can independently show optical response signal, can be used for realizing Real-Time Optical tracking detection and light imaging.
Description
Technical field
The disclosure belongs to imaging apparatus part and nanometer field of new energy technologies, be related to a kind of flexible optoelectronic detector array and
Preparation method.
Background technique
With flexible optoelectronic industrial expansion, flexible optoelectronic detector is due in optic communication, imaging technique, environmental monitoring
Etc. application, have been to be concerned by more and more people.In practical applications, the flexible optoelectronic detector array of large-scale integrated
Just it is able to satisfy the increasingly developed demand of emerging technology.But the photodetector array existence based on conventional semiconductor material
Can be poor, the problems such as can not integrating on a flexible substrate.
Novel perovskite material becomes the fine of assembling flexible optoelectronic detector array due to its photoelectric characteristic outstanding
Selection.The maximum challenge of flexible optoelectronic detector array assembling based on perovskite material is using suitable method in flexible base
The material of integrated array on bottom.Up to the present, it has been reported that the method for several integrated array perovskite materials, still
There are still many disadvantages: (1) traditional some synthetic methods, such as: chemical vapor deposition (CVD), vapor phase epitaxial growth, mould
Plate method etc. is not suitable for the assembling applied to flexible device due to needing very high temperature and special substrate；(2) large scale array
The synthesising position of material is unable to accurately control, and causes device assembling extremely difficult；(3) complex process, in device assembling process
Inevitably influence the photoelectric characteristic of material.Problem above all significantly limits the flexible light electrical resistivity survey based on perovskite material
Survey the assembling and application of device array.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of flexible optoelectronic detector arrays and preparation method thereof, mentioned above at least partly to solve
Out the technical issues of.
(2) technical solution
According to one aspect of the disclosure, a kind of flexible optoelectronic detector array is provided, comprising: substrate；Metallic circuit,
Comprising array polarizing electrode, it is located at substrate；Surface parent/hydrophobicity handles auxiliary layer, is located on metallic circuit, has and array
The corresponding hollow area in polarizing electrode position exposes the array polarizing electrode；Photosensitive layer is located at surface parent/hydrophobicity processing
In the hollow area of auxiliary layer, and it is located in array polarizing electrode；And encapsulated layer, it is located at photosensitive layer and surface parent/hydrophobicity
It manages on auxiliary layer.
In some embodiments of the present disclosure, metallic circuit further include: multiple external anodes and external cathode, with array
Each of electrode electrode is correspondingly connected with；An external just extremely public anode, is connected to all array polarizing electrodes, should
External cathode is mutually indepedent.
In some embodiments of the present disclosure, the thickness of surface parent/hydrophobicity processing auxiliary layer between 10nm~30nm it
Between, and/or, surface parent/hydrophobicity processing auxiliary layer material is insulating properties thin-film material.
In some embodiments of the present disclosure, the length of each array element is between 10 μm~100 μm in array polarizing electrode
Between, the gap between two neighboring array element is between 50 μm~300 μm.
In some embodiments of the present disclosure, substrate is flexible high-temperature resistant transparent substrates；And/or the thickness of substrate between
Between 50 μm~200 μm；And/or the electrode in array polarizing electrode is interdigital electrode；And/or the material of encapsulated layer is with viscous
The transparent polymer organic material of attached property and tensility.
In some embodiments of the present disclosure, the high temperature resistant range of flexible high-temperature resistant substrate are as follows: 100 DEG C -300 DEG C；With/
Or, the substrate is poly terephthalic acid class plastics or polyethylene naphthalate.
In some embodiments of the present disclosure, the material of photosensitive layer is one of perovskite material, including following material
It is or several: CH3NH3PbI3、CH3NH3PbI3-xCl or CsPbBr3Perovskite material.
A kind of preparation method of flexible optoelectronic detector array another aspect of the present disclosure provides, the preparation
Method includes: that metallic circuit is formed on the substrate, which includes array polarizing electrode；The deposition surface on metallic circuit
Parent/hydrophobicity handles auxiliary layer, and carries out hydrophobicity, patterning, hydrophily processing, has surface parent/hydrophobicity process layer
Hollow area corresponding with array polarizing electrode position so that array polarizing electrode is exposed, and is formed in array electrode surface
Hydrophilic surface, on surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface；On surface, parent/hydrophobicity processing is auxiliary
It helps in the hollow area of layer, and forms photosensitive layer in array electrode surface；And in photosensitive layer and surface parent/hydrophobicity processing
Encapsulated layer is formed on auxiliary layer.
In some embodiments of the present disclosure, the method that forms photosensitive layer are as follows: two step successive sedimentation methods, two step are continuously sunk
Area method, comprising: the first presoma of spin coating on by surface parent/hydrophobic treatment array electrode surface, first presoma
Solvent be hydrophobic solvent, obtain first forerunner's volume array；And the second presoma of spin coating on first forerunner's volume array, it should
Second presoma and the first presoma can synthesize perovskite material jointly, obtain photosensitive layer.
In some embodiments of the present disclosure, the method for hydrophobicity processing are as follows: sample is immersed in octadecyl siloxanes
It is handled in the mixed liquor of n-hexane；And/or the method for hydrophily processing are as follows: use oxygen plasma treatment.
(3) beneficial effect
It can be seen from the above technical proposal that the flexible optoelectronic detector array and preparation method thereof that the disclosure provides, tool
Have it is following the utility model has the advantages that
Surface parent/hydrophobicity is formed on metallic circuit and handles auxiliary layer, then handles auxiliary layer in surface parent/hydrophobicity
It is upper successively to carry out hydrophobicity, patterning and hydrophily processing, so that the array electrode in metallic circuit exposes, and in array electricity
Pole surface forms hydrophilic surface, and on surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface, in array polarizing electrode
Upper deposition perovskite material forms photosensitive layer, for the array perovskite material very harsh for preparation condition, hydrophobicity/
Hydrophily processing provides good growing environment for perovskite material, and the perovskite thin film densification being prepared and shape
Shape rule, is conducive to the photosensitive layer for synthesizing large scale array and complex pattern, and obtained flexible optoelectronic detector array has good
Good photo absorption property, electrical stability and bending resistance does not have crosstalk between each array element pixel, can be independent
It shows optical response signal, can be used for realizing Real-Time Optical tracking detection and light imaging.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the flexible optoelectronic detector array according to shown in one embodiment of the disclosure.
Fig. 2 is the partial sweep electron micrograph of flexible optoelectronic detector array as shown in Figure 1.
Fig. 3 is the preparation method flow chart of the flexible optoelectronic detector array according to shown in one embodiment of the disclosure.
Fig. 4 is to synthesize CH by two step successive sedimentation methods according to shown in one embodiment of the disclosure3NH3PbI3-xClxCalcium titanium
The process schematic of mine array.
Fig. 5 is by two step successive sedimentation methods according to shown in one embodiment of the disclosure by surface parent/hydrophobic treatment
PET substrate on the electron scanning micrograph of perovskite array for preparing.
Fig. 6 A is the optical photograph of the extensive perovskite array according to shown in one embodiment of the disclosure.
Fig. 6 B is the optical photograph of the complex pattern of the composition of the perovskite thin film according to shown in one embodiment of the disclosure.
Fig. 7 is the X ray diffracting spectrum of the perovskite material of the synthesis according to shown in one embodiment of the disclosure.
Fig. 8 is light (the illumination wave that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed in varying strength
Length it is equal) irradiation under corresponding current-voltage change curve.
Fig. 9 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed under same voltage as light intensity becomes
Change corresponding on-off conversion behavior and response time curve.
Figure 10 is the flexible optoelectronic detector array according to shown in one embodiment of the disclosure as light intensity increases corresponding light
The change curve of electric current and responsiveness.
Figure 11 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed in the light of different wave length (illumination is strong
Spend equal) irradiation under corresponding current-voltage change curve.
Figure 12 is listed under different bending angles corresponding for the flexible optoelectronic detector array according to shown in one embodiment of the disclosure
Dark current and illumination under curent change situation.
Figure 13 be the flexible optoelectronic detector array according to shown in one embodiment of the disclosure by different bending numbers it
The curent change situation under dark current and illumination afterwards.
Figure 14 be the flexible optoelectronic detector array according to shown in one embodiment of the disclosure by different bending numbers it
Afterwards as light intensity changes corresponding on-off conversion behavior.
Figure 15 is the electricity that the more pixels of flexible optoelectronic detector array according to shown in one embodiment of the disclosure are tested simultaneously
Road schematic diagram.
Figure 16 A is corresponding under the variation of light intensity according to 10 pixels in flexible optoelectronic detector array shown in figure 15
Voltage-vs-time situation of change.
Figure 16 B is the corresponding flexible optoelectronic detector array of Figure 16 A plus 10 pixel (pixels 5 and 6 after exposure mask
Except other pixels be all blanked) the corresponding voltage-vs-time situation of change under the variation of light intensity.
Figure 17 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure carries out showing for real-time tracing hot spot
It is intended to.
Figure 18 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure carries out light imaging schematic diagram.
[symbol description]
1- substrate；
2- metallic circuit；
21- array polarizing electrode；The external anode of 22-；
The external cathode of 23-；24- lead；
The surface 3- parent/hydrophobicity handles auxiliary layer；31- hollow area；
4- photosensitive layer；41- perovskite array；
5- encapsulated layer.
Specific embodiment
Present disclose provides a kind of flexible optoelectronic detector arrays and preparation method thereof, are schemed by preparing on metallic circuit
The surface parent of case/hydrophobicity handles auxiliary layer, hydrophilic surface is formed on the array electrode surface of metallic circuit, on surface
Parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface, and perovskite material is deposited in array polarizing electrode and forms photosensitive layer,
For the array perovskite material very harsh for preparation condition, hydrophobicity/hydrophily processing provides for perovskite material
Good growing environment, and the perovskite thin film that is prepared is fine and close and regular shape, is conducive to synthesize extensive battle array
The photosensitive layer of column and complex pattern, obtained flexible optoelectronic detector array have good photo absorption property, electrical stability
And bending resistance, there is no crosstalk between each array element pixel, can independently show optical response signal, can be used for realizing
Real-Time Optical tracking detection and light imaging.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.In the disclosure, term " parent/hydrophobicity ", " hydrophobicity/hydrophily " meaning are indicated:
Hydrophily and/or hydrophobicity, " parent/hydrophobic treatment " indicate hydrophily processing and/or hydrophobicity processing.
In first exemplary embodiment of the disclosure, a kind of flexible optoelectronic detector array is provided.
Fig. 1 is the structural schematic diagram of the flexible optoelectronic detector array according to shown in one embodiment of the disclosure.
Shown in referring to Fig.1, the flexible optoelectronic detector array of the disclosure, comprising: substrate 1；Metallic circuit 2 includes array
Polarizing electrode 21 is located on substrate 1；Surface parent/hydrophobicity handles auxiliary layer 3, is located on metallic circuit 2, has and array
The corresponding hollow area 31 in 21 position of electrode exposes the array polarizing electrode 21；Photosensitive layer 4 is located at surface parent/hydrophobicity
In the hollow area 31 for handling auxiliary layer 3, and it is located in array polarizing electrode 21；And encapsulated layer 5, it is located at photosensitive layer 4 and surface
On parent/hydrophobicity processing auxiliary layer 3.
In the present embodiment, substrate 1 is flexible high-temperature resistant transparent substrates, can be bent easily when an external force is applied.Lining
The material at bottom 1 includes but is not limited to following material: poly terephthalic acid class plastics (PET) and polyethylene naphthalate
(PEN)。
In one example, the high temperature resistant range of flexible high-temperature resistant substrate are as follows: 100 DEG C -300 DEG C, thickness is between 50 μm~200
Between μm.
Fig. 2 is the partial sweep electron micrograph of flexible optoelectronic detector array as shown in Figure 1.
In the present embodiment, the length of each array element is between 10 μm~100 μm in array polarizing electrode 21, and adjacent two
Gap between a array element is between 50 μm~300 μm.
In conjunction with shown in Fig. 1, Fig. 2 and Figure 15, in the present embodiment, metallic circuit 2 includes: array polarizing electrode 21；It is multiple external
Anode 22 and external cathode 23, are correspondingly connected with each of array polarizing electrode 21 electrode；This external positive 22 be a public affairs
Anode altogether, is connected to all array polarizing electrodes, and the external cathode 23 is mutually indepedent.In one example, in array polarizing electrode 21
Each electrode and corresponding external anode, the connection of lead 24 is all made of between each electrode and corresponding external cathode.
In the present embodiment, referring to shown in Fig. 2, the electrode in array polarizing electrode 21 is interdigital electrode.
Electrode in array polarizing electrode 21 can be Ni/Au, and Ni is 5nm-20nm as adhesion layer, the thickness range of Ni,
The thickness range of Au is 20nm-100nm, and main function is conductive.
In the present embodiment, surface parent/hydrophobicity processing auxiliary layer 3 material is insulating properties thin-film material, preferably aluminium oxide
Film (Al2O3) and silicon oxide film (SiO2)。
In the present embodiment, surface parent/hydrophobicity processing auxiliary layer 3 thickness is between 10nm~30nm.
In the present embodiment, the material of photosensitive layer 4 is semiconductor film material, since perovskite material is in visible wavelength region
Inside there are the big absorption coefficient of light, the service life of overlength and diffusion length, can be used for assembling high-performance photodetector array, therefore feel
The perovskite material of the material preferred properties brilliance of photosphere, one or more of including but not limited to following material:
CH3NH3PbI3、CH3NH3PbI3-xCl or CsPbBr3Perovskite material.
In the present embodiment, the thickness of photosensitive layer 4 is between 500nm~2 μm.
In the present embodiment, the material of encapsulated layer 5 is the transparent polymer organic material with adhesiveness and tensility, excellent
Select dimethyl silicone polymer (Polydimethylsiloxane, PDMS).
Each electrode and perovskite array 41 disposed thereon in the array polarizing electrode 21 of flexible optoelectronic detector array
A probe unit or pixel is collectively formed in the photosensitive layer 4 of formation, and corresponding each pixel has an independent cathode, corresponding institute
Some pixels have a common anode, i.e., public anode, are not interfere with each other between each pixel, it can be achieved that Real-Time Optical is tracked
Detection and light imaging.
In the present embodiment, flexible optoelectronic detector array is prepared on the basis of not influencing perovskite material performance
, it should be noted that the photosensitive layer in the flexible detector array of the disclosure is not limited solely to perovskite material, other
Semiconductor film material is equally applicable, and due to the setting of surface parent/hydrophobicity processing auxiliary layer, which is existed
It does not influence to deposit on the electrode in the case where material property.
It should also be noted that, the shape of array polarizing electrode, material, thickness in the metallic circuit enumerated in the present embodiment,
Substrate, surface parent/hydrophobicity processing auxiliary layer, photosensitive layer and encapsulated layer material, thickness etc. be not only as an example, limit
The protection scope of the disclosure, those skilled in the art can also carry out adaptability setting according to actual needs.
In second exemplary embodiment of the disclosure, a kind of preparation side of flexible optoelectronic detector array is provided
Method.
Fig. 3 is the preparation method flow chart of the flexible optoelectronic detector array according to shown in one embodiment of the disclosure.
Referring to shown in Fig. 3, the preparation method of the flexible optoelectronic detector array of the disclosure, comprising:
Step S31: being formed on the substrate metallic circuit, which includes array polarizing electrode；
In the present embodiment, substrate 1 is PET substrate；Metallic circuit 2 includes array polarizing electrode 21 and multiple external anodes
22 and external cathode 23, wherein each electrode in array polarizing electrode is interdigital electrode, multiple external positive 22 and external cathode
Each of 23 and array polarizing electrode 21 electrode are correspondingly connected with, this external positive 22 be a public anode, be connected to all
Array polarizing electrode, the external cathode 23 is mutually indepedent.
In the present embodiment, metallic circuit 2 is prepared using photoetching technique and magnetron sputtering.
Step S32: deposition surface parent/hydrophobicity handles auxiliary layer on metallic circuit, and carry out hydrophobicity, patterning,
Hydrophily processing, makes surface parent/hydrophobicity process layer have hollow area corresponding with array polarizing electrode position, so that battle array
Column polarizing electrode is exposed, and forms hydrophilic surface in array electrode surface, parent/hydrophobicity processing auxiliary layer surface shape on surface
At hydrophobic surface；
In this step S32, carry out hydrophobicity, patterning, hydrophily processing, make surface parent/hydrophobicity process layer have with
The corresponding hollow area in array polarizing electrode position so that array polarizing electrode is exposed, and forms parent in array electrode surface
Aqueous surface, on surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface, comprising: at surface parent/hydrophobicity
It manages auxiliary layer and carries out hydrophobicity processing, and patterned process is carried out to surface parent/hydrophobicity process layer, make surface parent/hydrophobicity
Process layer has hollow area corresponding with array polarizing electrode position, so that array polarizing electrode is exposed, and to array electricity
Pole carries out hydrophily processing；
In the present embodiment, deposition surface parent/hydrophobicity handles auxiliary layer on metallic circuit by the way of magnetron sputtering
3, then sample is immersed in octadecyl siloxanes (OTS) and the mixed liquor of n-hexane auxiliary to surface parent/hydrophobicity processing
Layer is helped to do surface hydrophobic processing；Photoresist exposure mask is deposited simultaneously on surface parent/hydrophobicity processing auxiliary layer 3 using photoetching technique
Pattern out is exposed, makes surface parent/hydrophobicity process layer that there is hollow area corresponding with array polarizing electrode position, utilizes corruption
Erosion liquid erodes the surface parent in array polarizing electrode/hydrophobicity processing auxiliary layer, so that array polarizing electrode is exposed, then utilizes
Oxygen plasma does surface hydrophilicity processing.
In one example, surface parent/hydrophobicity processing auxiliary layer is Al2O3Sample is immersed in by film with a thickness of 20nm
About 20 minutes in the mixed liquor of OTS and n-hexane, on surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface,
By photoetching technique in Al2O3Film surface forms designed photoresist exposure mask, make surface parent/hydrophobicity process layer have with
The corresponding hollow area in array polarizing electrode position, by corrosive liquid by the Al in interdigital electrode2O3Thin film corrosive falls, the corruption
Erosion liquid can choose the phosphoric acid solution of saturation, and then uses oxygen plasma treatment 2 minutes, is finally formed interdigital electrode region
Then hydrophilic surface is removed photoresist with acetone.
Step S33: it in surface parent/hydrophobicity processing auxiliary layer hollow area, and is formed in array electrode surface
Photosensitive layer；
In the present embodiment, the method that forms photosensitive layer are as follows: two step successive sedimentation methods, the two steps successive sedimentation method, comprising:
By the first presoma of spin coating on surface parent/hydrophobic treatment array electrode surface, the solvent of first presoma is hydrophobic
Property solvent, obtains first forerunner's volume array；And the second presoma of spin coating on first forerunner's volume array, second presoma with
First presoma can synthesize perovskite material jointly, obtain photosensitive layer.
Fig. 4 is to synthesize CH by two step successive sedimentation methods according to shown in one embodiment of the disclosure3NH3PbI3-xClxCalcium titanium
The process schematic of mine array.
Referring to shown in (a), (b) and (c) in Fig. 4, in one example, the method for forming photosensitive layer is as follows:
Step 1: the spin coating presoma one on having already passed through surface parent/hydrophobic treatment substrate.CH3NH3PbI3-xClxCalcium
The presoma of titanium ore is first is that lead iodide (PbI2) and lead chloride (PbCl2) mixture in dimethylformamide (DMF) solvent.
PbI after the completion of spin coating2And PbCl2Array is formed in hydrophilic region, referring to fig. 4 in shown in (b).Different material precursors is different,
To which different solvents will be selected.In order to which desired array is obtained after the completion of spin coating in processed substrate, presoma one
Solvent must be hydrophobic solvent.
Step 2: the presoma two of spin coating synthesis perovskite material, CH3NH3PbI3-xClxThe presoma of perovskite is second is that first
Base iodate amine (CH3NH3I) solution, can be by PbI after the completion of spin coating2And PbCl2It is array switching at CH3NH3PbI3-xClxCalcium titanium
Mine array, referring to fig. 4 in shown in (c), then use two corresponding solvent cleaning sample surface of presoma, the material of the presoma two
Isopropanol is selected to clean extra PbI2And PbCl2Particle；Finally heating sample improves material crystalline on drying platform.
The photosensitive layer for the array being prepared is characterized further below.
Fig. 5 is by two step successive sedimentation methods according to shown in one embodiment of the disclosure by surface parent/hydrophobic treatment
PET substrate on the electron scanning micrograph of perovskite array for preparing.As shown in Figure 5, the array being prepared
Perovskite thin film is very fine and close and regular shape.
Fig. 6 A is the optical photograph of the extensive perovskite array according to shown in one embodiment of the disclosure, and Fig. 6 B is according to this
The optical photograph of the complex pattern of the composition of perovskite thin film shown in one embodiment is disclosed.From Fig. 6 A and Fig. 6 B: utilizing
The preparation method of the disclosure can synthesize the photosensitive layer film of the array with large scale array and complex pattern.
Fig. 7 is the X ray diffracting spectrum of the perovskite material of the synthesis according to shown in one embodiment of the disclosure.It can by Fig. 7
Know, the perovskite material being prepared is tetragonal crystal perovskite structure, and crystallinity is fine.
Step S34: encapsulated layer is formed on photosensitive layer and surface parent/hydrophobicity processing auxiliary layer；
In the present embodiment, in the present embodiment, the material of encapsulated layer 5 is the transparent polymer with adhesiveness and tensility
Organic material, preferably PDMS.
In one example, the flexible light preparation method of flexible optoelectronic detector array shown in second embodiment obtained
Electric explorer array has carried out performance test.
Fig. 8 is light (the illumination wave that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed in varying strength
Length it is equal) irradiation under corresponding current-voltage change curve.Electric current very little when as shown in Figure 8, without illumination；Under light illumination, with
The increase of luminous intensity, light intensity is from 0.033,0.46,2.10,4.15,9.12,15.1,29.7,38.3 (units: mWcm-2) by
Cumulative to add, electric current correspondence is gradually increased.
Fig. 9 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed under same voltage as light intensity becomes
Change corresponding on-off conversion behavior and response time curve.As shown in Figure 9, the device current very little when not adding light；When adding light
Device current increases rapidly afterwards, the corresponding time: 0.48s, and can keep in this case stable；When light source closing, electric current
It is reduced rapidly, recovery time are as follows: 0.26s, and current value when not adding light can be restored to.
Figure 10 is the flexible optoelectronic detector array according to shown in one embodiment of the disclosure as light intensity increases corresponding light
The change curve of electric current and responsiveness.As shown in Figure 10, photoelectric current increases with the increase of light intensity；Responsiveness is with light intensity
Increase and reduce, is 0.033mWcm in light intensity-2When corresponding responsiveness it is maximum, be 9.4 × 1011Jones。
Figure 11 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure is listed in the light of different wave length (illumination is strong
Spend equal) irradiation under corresponding current-voltage change curve.As shown in Figure 11, in visible-range, the flexible light electrical resistivity survey
Surveying device array has apparent photoresponse.
Figure 12 is listed under different bending angles corresponding for the flexible optoelectronic detector array according to shown in one embodiment of the disclosure
Dark current and illumination under curent change situation.As shown in Figure 12, different bending angles such as: 30 °, 75 °, 120 ° and 150 °
Under, the dark current, photoelectric current when the dark current and photoelectric current of device are substantially with the device without bending are identical, and very big
Bending angle under, the dark current of device and the electric current under illumination can be held essentially constant, and it is fine to illustrate that the device has
Electrical stability.
Figure 13 be the flexible optoelectronic detector array according to shown in one embodiment of the disclosure by different bending numbers it
The curent change situation under dark current and illumination afterwards.Figure 14 is the flexible optoelectronic detector according to shown in one embodiment of the disclosure
Array is by different bending numbers later as light intensity changes corresponding on-off conversion behavior.By Figure 13 and Figure 14 it is found that
Under different bending numbers, the performance of the situation of change of the dark current of device and photoelectric current and the device without bending almost phase
Together, and on-off conversion behavior is also roughly the same, illustrates that the device has good bending resistance.
Figure 15 is the electricity that the more pixels of flexible optoelectronic detector array according to shown in one embodiment of the disclosure are tested simultaneously
Road schematic diagram.As shown in Figure 15, with photosensitive layer thereon a spy is collectively formed in array polarizing electrode in flexible optoelectronic detector array
Survey unit or pixel, corresponding each pixel has an independent cathode, corresponding all pixels have one it is common just
Pole, i.e., public anode add an outer connecting resistance between each external anode and external cathode.
Figure 16 A is corresponding under the variation of light intensity according to 10 pixels in flexible optoelectronic detector array shown in figure 15
Voltage-vs-time situation of change.By Figure 16 A it is found that under light conditions, 10 pixels of the device have approximate consistent light
Response, illustrates that the device pixel point performance has good consistency, meets light imaging demand.
Figure 16 B is the corresponding flexible optoelectronic detector array of Figure 16 A plus 10 pixel (pixels 5 and 6 after exposure mask
Except other pixels be all blanked) the corresponding voltage-vs-time situation of change under the variation of light intensity.By Figure 16 B it is found that picture
The optical response signal of vegetarian refreshments 5 and 6 does not influence other pixels, illustrates do not have crosstalk between each pixel of the device, can be with
Independent display optical response signal.
Figure 17 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure carries out showing for real-time tracing hot spot
It is intended to.In Figure 17 shown in (i), facula position is moved to pixel 5 by pixel 1, when hot spot passes through a certain pixel, device
Corresponding pixel just generates photoresponse in part, and referring to shown in (ii) in Figure 17 and (iii), therefore the device may be implemented in real time
Hot spot tracking.
Figure 18 is that the flexible optoelectronic detector array according to shown in one embodiment of the disclosure carries out light imaging schematic diagram.By scheming
Shown in 18, when hot spot is irradiated on device by a designed exposure mask, the pixel not being blanked generates high voltage, quilt
The pixel of cover is still within low-voltage, by output data it can be seen that clearly " H " pattern, it is seen that the device may be implemented
Light imaging.
In conclusion present disclose provides a kind of flexible optoelectronic detector arrays and preparation method thereof, on metallic circuit
It forms surface parent/hydrophobicity and handles auxiliary layer, then successively carry out hydrophobicity, figure on surface parent/hydrophobicity processing auxiliary layer
Case and hydrophily processing, so that the array electrode in metallic circuit exposes, and forms hydrophilic surface on array electrode surface,
On surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface, and perovskite material is deposited in array polarizing electrode and is formed
Photosensitive layer, for the array perovskite material very harsh for preparation condition, hydrophobicity/hydrophily processing is perovskite material
Material provides good growing environment, and the perovskite thin film densification being prepared and regular shape, and it is big to be conducive to synthesis
The photosensitive layer of scale array and complex pattern, obtained flexible optoelectronic detector array have good photo absorption property, electricity
Stability and bending resistance do not have crosstalk between each array element pixel, can independently show optical response signal, can use
It is imaged in realizing that Real-Time Optical tracking is detected with light.
It will be appreciated by those skilled in the art that the above-mentioned description as described in material, size etc. is only exemplary, not use
In the restriction disclosure.
The preferred embodiment of the disclosure is described in detail in conjunction with attached drawing above, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical solution of the disclosure
Monotropic type, these simple variants belong to the protection scope of the disclosure.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, it can be combined in any appropriate way.In order to avoid unnecessary repetition, the disclosure to it is various can
No further explanation will be given for the combination of energy.
In addition, any combination can also be carried out between a variety of different embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought equally should be considered as the content that the disclosure is protected.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of flexible optoelectronic detector array, comprising:
Substrate；
Metallic circuit includes array polarizing electrode, is located at the substrate；
Surface parent/hydrophobicity handles auxiliary layer, is located on the metallic circuit, has corresponding with array polarizing electrode position
Hollow area exposes the array polarizing electrode；
Photosensitive layer in the surface parent/hydrophobicity processing auxiliary layer hollow area, and is located at the array polarizing electrode
On；And
Encapsulated layer is located on the photosensitive layer and surface parent/hydrophobicity processing auxiliary layer.
2. flexible optoelectronic detector array according to claim 1, wherein the metallic circuit further include: multiple external
Positive and external cathode, is correspondingly connected with each of array polarizing electrode electrode；An external just extremely public anode,
All array polarizing electrodes are connected to, the external cathode is mutually indepedent.
3. flexible optoelectronic detector array according to claim 1 or 2, wherein
The surface parent/hydrophobicity handles the thickness of auxiliary layer between 10nm~30nm, and/or,
The surface parent/hydrophobicity processing auxiliary layer material is insulating properties thin-film material.
4. flexible optoelectronic detector array according to any one of claim 1 to 3, wherein in the array polarizing electrode
The length of each array element is between 10 μm~100 μm, and the gap between two neighboring array element is between 50 μm~300
Between μm.
5. flexible optoelectronic detector array according to any one of claim 1 to 4, wherein
The substrate is flexible high-temperature resistant transparent substrates；And/or
The thickness of the substrate is between 50 μm~200 μm；And/or
Electrode in the array polarizing electrode is interdigital electrode；And/or
The material of the encapsulated layer is the transparent polymer organic material with adhesiveness and tensility.
6. flexible optoelectronic detector array according to claim 5, wherein the high temperature resistant model of the flexible high-temperature resistant substrate
It encloses are as follows: 100 DEG C -300 DEG C；
And/or the substrate is poly terephthalic acid class plastics or polyethylene naphthalate.
7. flexible optoelectronic detector array according to any one of claim 1 to 6, wherein the material of the photosensitive layer
For one or more of perovskite material, including following material: CH3NH3PbI3、CH3NH3PbI3-xCl or CsPbBr3Perovskite
Material.
8. a kind of preparation method of the flexible optoelectronic detector array as described in any one of claims 1 to 7, comprising:
Metallic circuit is formed on the substrate, which includes array polarizing electrode；
Deposition surface parent/hydrophobicity handles auxiliary layer on metallic circuit, and carries out hydrophobicity, patterning, hydrophily processing, makes
Surface parent/hydrophobicity process layer has hollow area corresponding with array polarizing electrode position, so that array polarizing electrode is exposed,
And hydrophilic surface is formed in array electrode surface, on surface, parent/hydrophobicity processing auxiliary layer surface forms hydrophobic surface；
In surface parent/hydrophobicity processing auxiliary layer hollow area, and photosensitive layer is formed in array electrode surface；And
Encapsulated layer is formed on photosensitive layer and surface parent/hydrophobicity processing auxiliary layer.
9. preparation method according to claim 8, wherein the method for forming photosensitive layer are as follows: two step successive sedimentation methods,
The two steps successive sedimentation method, comprising:
The first presoma of spin coating on by surface parent/hydrophobic treatment array electrode surface, the solvent of first presoma
For hydrophobic solvent, first forerunner's volume array is obtained；And
The second presoma of spin coating on first forerunner's volume array, second presoma and the first presoma can synthesize perovskite jointly
Material obtains photosensitive layer.
10. preparation method according to claim 8 or claim 9, wherein
The method of the hydrophobicity processing are as follows: be immersed in sample in the mixed liquor of octadecyl siloxanes and n-hexane
Reason；And/or
The method of the hydrophily processing are as follows: use oxygen plasma treatment.
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