KR20210024708A - Mask for deposition and manufacturing method for the same - Google Patents

Abstract

The present invention relates to a mask for deposition, which comprises: a first layer having a nano-hole patterned at a predetermined pattern; and a second layer formed on the first layer and having a micro-hole.

Description

Evaporation mask and its manufacturing method {MASK FOR DEPOSITION AND MANUFACTURING METHOD FOR THE SAME}

The present application relates to a vapor deposition mask and a method of manufacturing the same.

A display refers to a device for visualizing electronic information obtained from various electronic devices such as a computer so that the human eye can check it. Such displays include plasma display panels (PDPs), liquid crystal panels (LCDs), organic light emitting diodes (OLEDs), and the like, and LCDs and OLEDs are currently mainly used.

In the LCD display, the light emitted from the back light is refracted or reflected by the liquid crystal to adjust the contrast, and the adjusted light is converted by the RGB three-color color filter to express colors. . Due to this driving principle, the LCD does not have excellent contrast ratio, and it is difficult to reduce the thickness to a certain level or less by the backlight. On the other hand, OLED displays express colors by regularly arranging organic elements capable of emitting each color of RGB, so unlike LCD displays, the contrast ratio is excellent, but the deterioration of the light-emitting elements occurring in the process of emitting light (burn-in Phenomenon) and rapid deterioration of the blue light emitting device.

Meanwhile, with the advent of the 4th industrial revolution, interest in small displays requiring high resolution, low power consumption, and light weight is increasing. Commercially available LCD displays, as described above, are difficult to have a thickness of less than a certain level due to the backlight, and there is a disadvantage that it is not suitable for a small display due to a heat generation problem generated in the process of applying the voltage.

In order to manufacture an OLED display suitable for a small display, a masking film, commonly referred to as a mask, for arranging an organic light emitting device at a predetermined position on a substrate is required. Such a mask tends to be made of metal to withstand the heat generated to deposit pixels, but there is a disadvantage in that the deposition substrate does not adhere well to the metal mask, so that the resolution may be degraded.

Korean Patent Laid-Open Publication No. 10-2019-0023652, the technology behind the background of the present application, relates to a metal material deposition mask for OLED pixel deposition and a method of manufacturing the same. The above disclosed patent only discloses a metal mask for depositing an OLED pixel, but does not recognize a polymer mask.

The present application is to solve the problems of the prior art described above, and an object of the present invention is to provide a deposition mask.

In addition, an object of the present invention is to provide a method of manufacturing the above vapor deposition mask.

However, the technical problem to be achieved by the embodiments of the present application is not limited to the technical problems as described above, and other technical problems may exist.

As a technical means for achieving the above technical problem, the first aspect of the present application includes a first layer including nanoholes patterned in a certain pattern and a second layer formed on the first layer and including microholes. It provides a mask for deposition, including.

According to the exemplary embodiment of the present disclosure, a third layer formed on the second layer and including a macro hole having a size larger than that of the micro hole may be additionally included, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the first layer, the second layer, and the third layer may include different polymers, but are not limited thereto.

According to one embodiment of the present application, the first layer, the second layer, and the third layer are each independently photocurable acrylate, PDMS (polydimethylsiloxane), epoxy resin, amino resin ( amino resin), phenol resin, polyester resin, polyurethane, polyuria, bakelite, melamine resin, Benzoxazine, furan Curable plastics selected from the group consisting of furan resin, vinyl ester resin, and combinations thereof may be included, but are not limited thereto.

According to the exemplary embodiment of the present application, the deposition mask may deposit a deposition material on the deposition surface through the nanoholes of the first layer, and the second layer may support the first layer, but is limited thereto. It is not.

According to the exemplary embodiment of the present disclosure, in the deposition mask, the third layer may support the first layer and the second layer, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the hardness of the second layer may be greater than that of the first layer, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the hardness of the third layer may be greater than that of the second layer, and the hardness of the second layer may be greater than that of the first layer, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the ratio of the height of the first layer and the height of the second layer may be in the range of 1:10 to 1:200, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the aspect ratio of the nano-holes may be 1: 1.1 to 1: 2, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the nano-hole may have a diameter of 200 nm to 1 μm, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the micro-hole may have a diameter of 1 μm to 100 μm, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the macro hole may have a diameter of 1 μm to 1 cm, but is not limited thereto.

In addition, the second aspect of the present application is a step of forming a first layer including nano holes by injecting a first polymer onto a first assembly including a buffer layer disposed oppositely on a substrate having a nano hole pattern, micro holes Forming a second layer including microholes by injecting a second polymer onto a second assembly including a buffer layer disposed oppositely on a substrate having a pattern, and combining the first layer and the second layer It provides a method of manufacturing a deposition mask comprising the step of.

According to the exemplary embodiment of the present disclosure, a third polymer including a macro hole is injected onto a third assembly including a buffer layer disposed oppositely on a patterned substrate having macro holes having a size larger than that of the micro holes. The step of forming a layer may be additionally included, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the hardness of the second polymer may be greater than that of the first polymer, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the hardness of the third polymer may be greater than that of the second polymer, and the hardness of the second polymer may be greater than that of the first polymer, but is not limited thereto.

According to an exemplary embodiment of the present disclosure, forming the first layer or forming the second layer may include curing the first polymer or the second polymer by applying light or heat, It is not limited thereto.

According to the exemplary embodiment of the present disclosure, the first polymer, the second polymer, or the third polymer are each independently photocurable acrylate, PDMS (polydimethylsiloxane), epoxy resin, and amino resin. resin), phenol resin, polyester resin, polyurethane, polyuria, bakelite, melamine resin, Benzoxazine, furan resin Plastics selected from the group consisting of (furan resin), vinyl ester resin, and combinations thereof may be included, but are not limited thereto.

According to one embodiment of the present application, the substrate and the buffer layer are each independently silicon, silicon carbide, germanium, silicon germanium, silicon carbide, InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, ITO, FTO, and may include those selected from the group consisting of combinations thereof, but is not limited thereto.

The above-described problem solving means are merely exemplary and should not be construed as limiting the present application. In addition to the above-described exemplary embodiments, additional embodiments may exist in the drawings and detailed description of the invention.

According to the means for solving the above-described problems, since the deposition mask according to the present application deposits R, G, or B light-emitting elements or color filters through nanoholes having a low aspect ratio, a display having a high resolution can be manufactured.

In addition, since the deposition mask according to the present application is made of a polymer material, it can be adhered to the deposition surface without gap (conformal contact). Therefore, the material deposited by the deposition mask can be deposited with high anisotropy.

In addition, the conventional metal mask has a disadvantage in that it cannot be restored to its original state if it is damaged by temperature or external force. However, since the deposition mask according to the present application uses a polymer material, it is only temporarily deformed by temperature or external force, and it is easy to recover to its original state.

In addition, since the deposition mask according to the present application is made of a polymer material, it can be adhered to the deposition surface without gap (conformal contact). Accordingly, the material deposited by the deposition mask may have high anisotropy and may be deposited.

In addition, since the deposition mask according to the present application uses a fluid channel patterning technique, the resolution can be freely adjusted by the fluid channel, and it can overcome the optical limitation (depth of focus) or the limitation of the precision process by the conventional photo process. I can.

In addition, the deposition mask according to the present application includes a first layer including a deposition nano hole and a second layer supporting the first layer. That is, even if the material to be deposited during the deposition process is deposited on the first layer, the shape can be maintained by the second layer, so that the first layer can be adhered to the deposition surface without a gap.

In addition, since the deposition mask according to the present application includes a layered structure, handling is easy, and unlike a conventional metal mask, it is grafted with a soft material or a hard material to be used as a variety of uses.

In addition, the method of manufacturing a deposition mask according to the present application is simple and can be performed in a short time because it consists of patterning, injection, curing, and bonding processes, and thus has high efficiency compared to the conventional method of manufacturing a deposition mask.

Moreover, since the deposition mask according to the present application is made of a polymer material, the deposition mask can be manufactured in a large area.

However, the effect obtainable in the present application is not limited to the above-described effects, and other effects may exist.

1 is a cross-sectional view of a deposition mask according to an embodiment of the present application.
2 is a cross-sectional view of a deposition mask according to an embodiment of the present application.
3 is an example of using a deposition mask according to an embodiment of the present application.
4 is a schematic diagram of the performance of a deposition mask according to an embodiment of the present application.
5 is a flow chart showing a method of manufacturing a deposition mask according to an embodiment of the present application.
6 is a schematic diagram showing a method of manufacturing a deposition mask according to an embodiment of the present application.
7 is an SEM image of a deposition mask according to an embodiment of the present application.
8 is an SEM image of a deposition mask according to an embodiment of the present application.
9 is a SEM image of a deposition mask according to an embodiment of the present application.
10 is a comparison diagram of a deposition mask according to an embodiment and a comparative example of the present application.
11 is a graph showing the flexibility of a deposition mask according to an embodiment of the present application.

Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art may easily implement the present application.

However, the present application may be implemented in various different forms and is not limited to the embodiments described herein. In addition, in the drawings, parts irrelevant to the description are omitted in order to clearly describe the present application, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the present specification, when a part is said to be "connected" with another part, this includes not only the case that it is "directly connected", but also the case that it is "electrically connected" with another element interposed therebetween. do.

Throughout the present specification, when a member is positioned "on", "upper", "upper", "under", "lower", and "lower" of another member, this means that a member is located on another member. This includes not only the case where they are in contact but also the case where another member exists between the two members.

In the entire specification of the present application, when a certain part "includes" a certain component, it means that other components may be further included rather than excluding other components unless specifically stated to the contrary.

As used herein, the terms "about", "substantially" and the like are used in or close to the numerical value when manufacturing and material tolerances specific to the stated meaning are presented, and to aid understanding of the present application. In order to avoid unreasonable use by unscrupulous infringers of the stated disclosures, either exact or absolute figures are used. In addition, throughout the specification of the present application, "step to" or "step of" does not mean "step for".

In the entire specification of the present application, the term "combination of these" included in the expression of the Makushi format refers to one or more mixtures or combinations selected from the group consisting of components described in the expression of the Makushi format, and the constituent elements It means to include one or more selected from the group consisting of.

Throughout this specification, the description of "A and/or B" means "A or B, or A and B".

Hereinafter, a deposition mask of the present application and a method of manufacturing the same will be described in detail with reference to embodiments and examples and drawings. However, the present application is not limited to these embodiments and examples and drawings.

As a technical means for achieving the above technical problem, the first aspect of the present application is formed on the first layer 100 and the first layer 100 including nano-holes patterned in a certain pattern, micro-holes It provides a deposition mask 10 including a second layer 200 including.

A display refers to a device that converts an electrical signal output from an electronic device into visual information and displays it to a user using light generated by itself or an external light source. In order to manufacture such a display, a method of implementing an arbitrary color by passing white light whose intensity is adjusted through a red, blue, and/or green filter, and a red luminous body, a blue luminous body, and/or a green luminous body emit light. It can be divided by adjusting the degree to implement an arbitrary color.

In this regard, when implementing the three-color filter or the three-color light emitter on a substrate to manufacture the display, there is a need to precisely control the amount and arrangement interval of the filter or the material constituting the light emitter of the same color and deposit it.

With the deposition mask according to the present application, in order to precisely deposit the filter or luminous material on the substrate, a hole exists in a fine area, and no hole exists in the other areas, so that a desired material is placed at a desired position on the substrate. It refers to a tool that can deposit a certain amount at intervals. Conventional deposition masks use a metal mask that is convenient to process, but the metal mask has a disadvantage in that it is difficult to adhere to the deposition surface due to the accumulation of materials to be deposited during the deposition process and bend, so that accuracy decreases during repeated use.

The deposition mask 10 according to the present application is to solve the warpage problem occurring in the metal mask by arranging two polymers having different hardnesses in a layered structure.

According to one embodiment of the present application, the deposition mask 10 deposits a deposition material on the deposition surface through the nanoholes of the first layer 100, and the second layer 200 is the first layer. (100) may be supported, but is not limited thereto.

Like the conventional metal mask, the deposition material may be deposited on the first layer 100 or the second layer 200 in the deposition process of the deposition mask 10 according to the present application. However, the deposition mask 10 is a deposition mask having a layered structure supported so that the shape of the first layer 100 can be maintained by the second layer 200, compared to a conventional metal mask. The effect of the deposition material may be reduced.

Specifically, the conventional metal mask has a disadvantage in that it cannot be restored to its original state if it is damaged by temperature or external force. However, since the deposition mask according to the present application uses a polymer material, it is only temporarily deformed by temperature or external force, and it is easy to recover to its original state.

1 is a cross-sectional view of a deposition mask 10 according to an embodiment of the present application.

Referring to FIG. 1, the deposition mask 10 is formed on the first layer 100 and the first layer 100 including nano holes, and the second layer 200 including micro holes. ) Can be included. In this regard, as will be described later, the deposition mask 10 is formed on the second layer 200 and may include a third layer 300 including a macro hole.

According to the exemplary embodiment of the present disclosure, the third layer 300 formed on the second layer 200 and including a macro hole having a size larger than that of the micro hole may be additionally included, but is limited thereto. It is not.

According to the exemplary embodiment of the present disclosure, the third layer 300 may support the first layer 100 and the second layer 200 in the deposition mask 10, but is not limited thereto. .

2 is a cross-sectional view of a deposition mask 10 according to an embodiment of the present application.

Referring to FIG. 2, the deposition mask 10 is formed on the first layer 100 and the first layer 100 including nano holes for depositing a deposition material, and the first layer Supporting 100, including the second layer 200 including the micro-holes having a larger size than the nano-holes, and supporting the first layer 100 and the second layer 200 For example, a third layer 300 formed on the second layer 200 and including a macro hole having a size larger than that of the micro hole may be additionally included.

According to the exemplary embodiment of the present disclosure, the first layer 100, the second layer 200, and the third layer 300 may include different polymers, but are not limited thereto.

According to one embodiment of the present application, the first layer 100, the second layer 200, and the third layer 300 are each independently photocurable acrylate, PDMS (polydimethylsiloxane), epoxy Epoxy resin, amino resin, phenol resin, polyester resin, polyurethane, polyuria, bakelite, melamine resin ), Benzoxazine, furan resin, vinyl ester resin, and a curable plastic selected from the group consisting of combinations thereof, but are not limited thereto.

As described above, the first layer 100 may be supported by the second layer 200 to maintain its shape, and the second layer 200 may be supported by the third layer 300 to change its shape. I can keep it. Accordingly, the first layer 100, the second layer 200, and the third layer 300 may include polymers having different hardnesses.

As will be described later, since the first layer 100 may include the curable plastic, the bonding strength with the deposition surface is improved, so that the deposition material can be deposited on the deposition surface more accurately than a conventional metal mask. .

As will be described later, since the deposition mask 10 contains a polymer, unlike a conventional metal mask, it is easy to manufacture in a large area, and since an etching process is not required during the manufacturing process, a high resolution and extremely low cost process can be implemented. Do.

According to the exemplary embodiment of the present disclosure, the hardness of the second layer 200 may be greater than that of the first layer 100, but is not limited thereto.

According to one embodiment of the present application, the hardness of the third layer 300 is greater than the hardness of the second layer 200, the hardness of the second layer 200 is greater than the hardness of the first layer 100 It may be large, but is not limited thereto.

According to one embodiment of the present application, the hardness of the first layer 100, the second layer 200, and the third layer 300 may each independently be 0.5 MPa to 1000 MPa, but is limited thereto. It is not.

For example, the hardness of the first layer 100, the second layer 200, and the third layer 300 are each independently about 0.5 Mpa to about 1000 Mpa, about 1 Mpa to about 1000 Mpa, About 10 Mpa to about 1000 Mpa, about 100 Mpa to about 1000 Mpa, about 200 Mpa to about 1000 Mpa, about 300 Mpa to about 1000 Mpa, about 400 Mpa to about 1000 Mpa, about 500 Mpa to about 1000 Mpa, about 600 Mpa to about 1000 Mpa, about 700 Mpa to about 1000 Mpa, about 800 Mpa to about 1000 Mpa, about 900 Mpa to about 1000 Mpa, about 0.5 Mpa to about 900 Mpa, about 0.5 Mpa to about 800 Mpa, about 0.5 Mpa to About 700 Mpa, about 0.5 Mpa to about 600 Mpa, about 0.5 Mpa to about 500 Mpa, about 0.5 Mpa to about 400 Mpa, about 0.5 Mpa to about 300 Mpa, about 0.5 Mpa to about 200 Mpa, about 0.5 Mpa to about 100 Mpa, about 0.5 Mpa to about 10 Mpa, about 0.5 Mpa to about 1 Mpa, about 1 Mpa to about 900 Mpa, about 10 Mpa to about 800 Mpa, about 100 Mpa to about 700 Mpa, about 200 Mpa to about 600 Mpa, It may be about 300 Mpa to about 500 Mpa, or about 400 MPa, but is not limited thereto.

The hardness of the first layer 100, the second layer 200, and the third layer 300, which will be described later, may be modified depending on the manufacturing process, composition, or material, and can be adjusted according to the purpose of deposition. Do.

According to the exemplary embodiment of the present disclosure, a ratio of the height of the first layer 100 and the height of the second layer 200 may be 1:10 to 1:200, but is not limited thereto.

As will be described later, the thinner the first layer 100 is, the more advantageous it is to evaporate, but the possibility of occurrence of warpage due to the evaporation material increases. The deposition mask 10 according to the present application forms the second layer 200, which is thicker than the first layer 100, on the first layer 100, thereby causing the first layer 100 to be warped. Can be suppressed.

3 is an example of using the deposition mask 10 according to an embodiment of the present application.

Referring to FIG. 3, red, green, and blue deposition materials may be deposited on the deposition surface through the deposition mask 10.

For example, first, a red material may be deposited on the deposition surface using the nanoholes of the first layer 100. Subsequently, after the deposition mask 10 is moved at regular intervals, a green material may be deposited using the same process. Subsequently, after the deposition mask 10 is moved by a predetermined interval, a blue material may be deposited using the same process. In this case, the order of depositing the red material, the green material, and the blue material may be randomly selected. In addition, the red material, the green material, and the blue material may be completely deposited on the deposition surface so as to be clearly distinguished.

In this regard, since the deposited red material, the green material, and the blue material have a very thin thickness, a problem in which the first layer 100 is bent by the deposited material and/or the first layer 100 ) And the deposition of the deposition surface does not deteriorate.

According to the exemplary embodiment of the present disclosure, the aspect ratio of the nano-holes may be 1: 1.1 to 1: 2, but is not limited thereto. Preferably, the aspect ratio of the nano-holes may be 2:3, but is not limited thereto.

For example, when the aspect ratio of the nano-holes is 2: 3 or more, the deposition of the deposition material may not be smooth due to the vertical portion of the nano-holes, or the interface of the deposition material may become unclear.

In addition, for example, when the aspect ratio of the nano-holes is 2:3 or less, the area of the nano-holes relative to the area of the first layer 100 becomes excessively small, resulting in a problem that the durability of the first layer 100 is lowered. I can. That is, when the aspect ratio of the nano-holes is 2: 3 or less, the density of the nano-holes decreases, and the gap between the deposited materials may increase.

In this regard, the aspect ratio of the nano-holes means a ratio between the diameter of the nano-holes and the height of the first layer 100, and is also referred to as step coverage. Since the diameter of the nano-holes is directly related to the resolution of the display, it is necessary to adjust the height of the nano-holes in order to control the deposition performance of a general deposition mask.

As described above, as the height of the nano-hole is lower, the deposition material may be completely deposited. However, when the deposition material is deposited on an area other than the nano-holes, for example, on the first layer 100, the first layer 100 is bent and the adhesion to the deposition surface may be deteriorated. Because of its existence, the height of the nano-holes needs to be adjusted at an appropriate level.

4 is a schematic diagram of the performance of the deposition mask 10 according to an embodiment of the present application. In this case, only the first layer 100 is displayed on the mask 10 of FIG. 4 for convenience.

Referring to FIG. 4, when the thickness of the nano holes is constant and the aspect ratio is high, the deposition material is not smoothly deposited. However, it can be seen that as the height of the first layer 100 decreases, the deposition material is smoothly deposited.

According to the exemplary embodiment of the present disclosure, the nano-hole may have a diameter of 200 nm to 1 μm, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the micro-hole may have a diameter of 1 μm to 100 μm, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the macro hole may have a diameter of 1 μm to 1 cm, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the macro hole may have a larger diameter than the micro hole, but is not limited thereto.

In addition, the second aspect of the present application is the step of forming the first layer 100 including nano holes by injecting the first polymer onto the first assembly including the buffer layer disposed oppositely on the substrate having the nano hole pattern. , Forming a second layer 200 including micro holes by injecting a second polymer onto a second assembly including a buffer layer disposed oppositely on a substrate having a micro hole pattern, and the first layer ( It provides a method of manufacturing the deposition mask 10, including the step of combining 100) and the second layer 200.

5 is a flowchart showing a method of manufacturing a deposition mask according to an embodiment of the present application, and FIG. 6 is a schematic diagram showing a method of manufacturing a deposition mask according to an embodiment of the present application.

With respect to the method of manufacturing the deposition mask 10 according to the second aspect of the present application, detailed descriptions of portions that overlap with the first aspect of the present application have been omitted, but contents described in the first aspect of the present application even if the description is omitted. Is equally applicable to the second aspect of the present application.

The method of manufacturing the deposition mask 10 does not require an etching process, and uses a first polymer, a second polymer, and/or a third polymer. Therefore, unlike the conventional method of manufacturing a metal mask, it can be manufactured in a large area, simplify the process, and deposit the deposition material with high resolution.

In order to manufacture the deposition mask 10 according to the present application, first, a first layer including nano holes by injecting a first polymer onto a first assembly including a buffer layer disposed oppositely on a substrate having a nano hole pattern. Form 100 (S100)

According to the exemplary embodiment of the present disclosure, the first assembly may be formed by patterning the substrate to have a pattern such as the nanoholes and bonding a buffer layer to face the patterned surface of the patterned substrate. , But is not limited thereto.

According to the exemplary embodiment of the present disclosure, the patterning may be performed by an etching process selected from the group consisting of oxygen plasma, chemical etching, dry etching, light etching, and combinations thereof, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the forming of the first layer 100 may further include curing the first polymer by applying light or heat, but is not limited thereto.

Specifically, when the first polymer is injected onto the first assembly, the first polymer may not be present in a portion of the first assembly having the same pattern as the nanoholes. In this regard, in order to remove the first combination from the first polymer and the first combination, the first polymer may be cured by applying light or heat on the first polymer, and the cured first The polymer may function as the first layer 100.

According to one embodiment of the present application, the first polymer, the second polymer to be described later, and the third polymer to be described later are each independently photocurable acrylate, polydimethylsiloxane (PDMS), and epoxy resin. , Amino resin, phenol resin, polyester resin, polyurethane, polyuria, bakelite, melamine resin, benzoxazine ( Benzoxazine), furan resin, vinyl ester resin, and a plastic selected from the group consisting of combinations thereof, but are not limited thereto.

For example, the first polymer, the second polymer, and the third polymer may each independently be any one of a photocurable acrylate resin or a thermosetting PDMS plastic, but is not limited thereto.

According to one embodiment of the present application, the first polymer, the second polymer, and the third polymer are each independently exposed to visible light selected from the group consisting of ultraviolet rays, electron beams, infrared rays, X-rays, and combinations thereof. By curing or may be cured at a temperature of 20 ℃ to 200 ℃, but is not limited thereto.

For example, when the first polymer is a photocurable acrylate, the first polymer may be cured by ultraviolet rays having a wavelength of 350 nm. In addition, when the first polymer is PDMS (thermosetting polymer), the first polymer is about 20°C to about 200°C, about 20°C to about 190°C, about 20°C to about 180°C, about 20°C to about 170 ℃, about 20 ℃ to about 160 ℃, about 20 ℃ to about 150 ℃, about 20 ℃ to about 140 ℃, about 20 ℃ to about 130 ℃, about 20 ℃ to about 120 ℃, about 20 ℃ to about 110 ℃, About 20 ℃ to about 100 ℃, about 20 ℃ to about 90 ℃, about 20 ℃ to about 80 ℃, about 20 ℃ to about 70 ℃, about 20 ℃ to about 60 ℃, about 20 ℃ to about 50 ℃, about 20 ℃ to about 40 ℃, about 20 ℃ to about 30 ℃, about 30 ℃ to about 200 ℃, about 40 ℃ to about 200 ℃, about 50 ℃ to about 200 ℃, about 60 ℃ to about 200 ℃, about 70 ℃ to About 200°C, about 80°C to about 200°C, about 90°C to about 200°C, about 100°C to about 200°C, about 110°C to about 200°C, about 120°C to about 200°C, about 130°C to about 200 ℃, about 140 ℃ to about 200 ℃, about 150 ℃ to about 200 ℃, about 160 ℃ to about 200 ℃, about 170 ℃ to about 200 ℃, about 180 ℃ to about 200 ℃, about 190 ℃ to about 200 ℃, About 30 ℃ to about 190 ℃, about 40 ℃ to about 180 ℃, about 50 ℃ to about 170 ℃, about 60 ℃ to about 160 ℃, about 70 ℃ to about 150 ℃, about 80 ℃ to about 140 ℃, about 90 It may be cured at a temperature of from about ℃ to about 130 ℃, from about 100 ℃ to about 120 ℃, or about 110 ℃, but is not limited thereto.

Contents related to the curing of the first polymer may be equally applied to the second polymer and the third polymer.

According to one embodiment of the present application, the substrate and the buffer layer are each independently silicon, silicon carbide, germanium, silicon germanium, silicon carbide, InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, ITO, FTO, and may include those selected from the group consisting of combinations thereof, but is not limited thereto.

Subsequently, the second polymer is injected onto the second assembly including the buffer layer disposed opposite to the substrate having the micro hole pattern, thereby forming the second layer 200 including the micro holes (S200).

According to an exemplary embodiment of the present application, the method of manufacturing the deposition mask 10 may include forming the second layer 200 after forming the first layer 100 or forming the second layer 200. After forming, the steps of forming the first layer 100 or forming the first layer 100 and the second layer 200 may be simultaneously performed, but the present invention is not limited thereto.

According to the exemplary embodiment of the present disclosure, the second assembly may be formed by patterning the substrate to have a pattern such as the micro-holes and bonding a buffer layer to face the patterned surface of the patterned substrate. , But is not limited thereto.

According to the exemplary embodiment of the present disclosure, the patterning may be performed by an etching process selected from the group consisting of oxygen plasma, chemical etching, dry etching, light etching, and combinations thereof, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the forming of the second layer 200 may include curing the second polymer by applying light or heat, but is not limited thereto.

Specifically, when the second polymer is injected onto the second assembly, the second polymer may not be present in a portion of the second assembly having the same pattern as the micro-holes. In this regard, in order to remove the second binder from the second polymer and the second binder, the second polymer may be cured by applying light or heat on the second polymer, and the cured second polymer The polymer may function as the second layer 200.

In this regard, the pattern of the second assembly may be formed by etching only the edge of the substrate, or have the micro-holes having a size larger than that of the nano-holes, and the micro-holes may completely include the nano-holes. It may be formed in a pattern, but is not limited thereto.

For example, when the nano-hole and the micro-hole are circular, the nano-hole and the micro-hole may be patterned so that their centers coincide, and when the nano-hole and the micro-hole are on the same plane, the nano-hole and the micro-hole are on the same plane. Holes may exist inside the micro-holes.

According to the exemplary embodiment of the present disclosure, the hardness of the second polymer may be greater than that of the first polymer, but is not limited thereto.

The second layer 200 includes the second polymer, and the first layer 100 includes the first polymer. Therefore, in order for the second layer 200 to support the first layer 100, the hardness of the second polymer must be greater than that of the first polymer.

Then, the first layer 100 and the second layer 200 are combined (S300).

According to the exemplary embodiment of the present disclosure, the combining may include independently treating the first layer 100 and the second layer 200 with oxygen plasma and then contacting each other, but is limited thereto. It is not.

According to an exemplary embodiment of the present disclosure, the combining may include heat treatment at 60°C to 200°C, but is not limited thereto.

According to an exemplary embodiment of the present disclosure, in the bonding step, the first layer 100 and the second layer 200 are each independently UV-treated for 1 minute, and then the first layer 100 and the second layer It may include a step of completely curing the layers 200 for 4 hours after contacting each other, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, before or after performing the step of combining the first layer 100 and the second layer 200, a macro hole having a size larger than that of the micro hole is formed on the patterned substrate. The step of forming the third layer 300 including macro holes by injecting the third polymer onto the third assembly including the buffer layer disposed opposite to each other may be additionally included, but is not limited thereto.

According to the exemplary embodiment of the present application, the third assembly may be formed by patterning the substrate to have a pattern such as the macro hole and coupling a buffer layer to face the pattern surface of the patterned substrate. , But is not limited thereto.

According to the exemplary embodiment of the present disclosure, the patterning may be performed by an etching process selected from the group consisting of oxygen plasma, chemical etching, dry etching, light etching, and combinations thereof, but is not limited thereto.

According to the exemplary embodiment of the present disclosure, the forming of the third layer 300 may include curing the third polymer by applying light or heat, but is not limited thereto.

Specifically, when the third polymer is injected onto the third assembly, the third polymer may not exist in a portion having the same pattern as the macro hole on the third assembly. In this regard, in order to remove the third binder from the third polymer and the third binder, the third polymer may be cured by applying light or heat on the third polymer, and the cured third polymer The polymer may function as the third layer 300.

In this regard, the pattern of the third assembly is formed by etching only the edge of the substrate, or has the macro hole having a size larger than that of the micro hole, and the macro hole may completely include the micro hole. It may be formed in a pattern, but is not limited thereto.

For example, when the micro-hole and the macro-hole are circular, the micro-hole and the macro-hole may be patterned so that their centers coincide, and when the micro-hole and the macro-hole are on the same plane, the micro-hole and the macro-hole are on the same plane. The hole may exist inside the macro hole.

The present invention is to be described in more detail through the following examples, but the following examples are for illustrative purposes only and are not intended to limit the scope of the present application.

[Example]

To prepare a deposition mask, first, a Si wafer substrate was etched to have a circular pattern having a diameter of 400 nm and a depth of 750 nm. Subsequently, a polymer molding technique was applied to invert the circular pattern of the etched substrate to become a pillar pattern, and after bonding the buffer layer substrate on the pillar pattern, a photocurable acrylate was injected. After curing the injected photocurable acrylate by irradiating ultraviolet rays of 350 nm wavelength for about 1 minute, the molded circular pillar substrate and the buffer layer substrate were separated to form a first layer.

Before, after, or at the same time as the first layer forming process was performed, the buffer layer substrate was bonded to the substrate having a circular column pattern having a diameter of 1 μm so as to be different from the pattern used when manufacturing the first layer. Subsequently, a photocurable acrylate having a composition ratio different from that of the first layer was injected onto the bonding body, and then cured by irradiation with ultraviolet rays. Then, the binder was separated from the cured acrylate to form a second layer.

The first layer and the second layer were treated with oxygen plasma, respectively, and then contacted and bonded to each other to prepare a deposition mask.

7 to 9 are SEM images of the deposition mask according to the embodiment.

Referring to FIGS. 7 to 9, it can be seen that holes having a diameter of 300 nm are regularly arranged in the deposition mask, and have a layered structure, and the second layer is formed very thick compared to the first layer.

[Comparative Example]

A conventional commercially available metal mask for vapor deposition was purchased and used.

[Experimental Example 1]

10 is a comparison diagram of a deposition mask according to the embodiment and the comparative example.

Referring to FIG. 10, since the conventional metal mask does not adhere to the deposition surface, the deposition material cannot be deposited in a uniform pattern in all areas. However, since the deposition mask according to the present application is well adhered to the deposition surface, the deposition material can be deposited in a uniform pattern in all areas.

[Experimental Example 2]

11 is a diagram showing the flexibility of the deposition mask according to the embodiment.

In this regard, the deposition mask further includes a third layer manufactured through a process similar to that of the first layer or the second layer.

Referring to FIG. 11, when the polymer forming the first layer, the second layer, or the third layer has a low modulus of 0.5 MPa, flexibility is maximized and a problem occurs in handling of the deposition mask. For example, when a material is deposited on a large-area substrate using the deposition mask, the deposition mask is folded, the deposition mask does not adhere well to the substrate, or the deposition mask is fixed. There is a disadvantage that is difficult to do. However, when the polymer forming the second layer and/or the third layer has a higher hardness than the polymer of the first layer, the problem that the deposition mask is bent and is not handled can be solved.

The foregoing description of the present application is for illustrative purposes only, and those of ordinary skill in the art to which the present application pertains will be able to understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present application. Therefore, it should be understood that the embodiments described above are illustrative and non-limiting in all respects. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as being distributed may also be implemented in a combined form.

The scope of the present application is indicated by the claims to be described later rather than the detailed description, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present application.

10: vapor deposition mask
100: first floor
200: second floor
300: 3rd floor

Claims (20)

A first layer including nano-holes patterned in a predetermined pattern; And
A second layer formed on the first layer and including micro holes;
Containing,
Evaporation mask.
The method of claim 1,
A deposition mask formed on the second layer and further comprising a third layer including macro holes having a size larger than that of the micro holes.
The method of claim 2,
The first layer, the second layer, and the third layer contain different polymers from each other.
The method of claim 2,
The first layer, the second layer, and the third layer are each independently photocurable acrylate, PDMS (polydimethylsiloxane), epoxy resin, amino resin, and phenol resin. resin), polyester resin, polyurethane, polyuria, bakelite, melamine resin, Benzoxazine, furan resin, vinyl ester Resin (vinyl ester resin), and one comprising a curable plastic selected from the group consisting of combinations thereof, for vapor deposition.
The method of claim 1,
The deposition mask is to deposit a deposition material on the deposition surface through the nano-holes of the first layer, the second layer to support the first layer, the deposition mask.
The method of claim 2,
In the deposition mask, the third layer supports the first layer and the second layer.
The method of claim 1,
The hardness of the second layer is greater than the hardness of the first layer, the deposition mask.
The method of claim 2,
The hardness of the third layer is greater than that of the second layer, and the hardness of the second layer is greater than that of the first layer.
The method of claim 1,
The ratio of the height of the first layer and the height of the second layer is 1: 10 to 1: 200.
The method of claim 1,
The aspect ratio of the nano-holes is 1: 1.1 to 1: 2 will be, the deposition mask.
The method of claim 1,
The nano-holes will have a diameter of 200 nm to 1 μm, the deposition mask.
The method of claim 1,
The micro-holes will have a diameter of 1 μm to 100 μm, the deposition mask.
The method of claim 2,
The macro hole will have a diameter of 1 μm to 1 cm, the deposition mask.
Forming a first layer including nano holes by injecting a first polymer onto a first assembly including a buffer layer disposed opposite to the substrate having the nano hole pattern;
Forming a second layer including micro-holes by injecting a second polymer onto a second assembly including a buffer layer disposed opposite to the substrate having the micro-hole pattern; And
Combining the first layer and the second layer;
Containing,
Method of manufacturing a vapor deposition mask.
The method of claim 14,
Further comprising forming a third layer including macro holes by injecting a third polymer onto a third assembly including a buffer layer disposed oppositely on the patterned substrate with macro holes larger than the micro holes That is, a method of manufacturing a vapor deposition mask.
The method of claim 14,
The second polymer has a hardness greater than that of the first polymer.
The method of claim 15,
The third polymer has a hardness greater than that of the second polymer, and the second polymer has a hardness greater than that of the first polymer.
The method of claim 14,
The forming of the first layer or the forming of the second layer further comprises curing the first polymer or the second polymer by applying light or heat.
The method of claim 15,
The first polymer, the second polymer, or the third polymer are each independently photocurable acrylate, PDMS (polydimethylsiloxane), epoxy resin, amino resin, and phenol resin. ), polyester resin, polyurethane, polyuria, bakelite, melamine resin, Benzoxazine, furan resin, vinyl ester resin (vinyl ester resin), and a method of manufacturing a vapor deposition mask comprising a plastic selected from the group consisting of combinations thereof.
The method of claim 14,
The substrate and the buffer layer are each independently silicon, silicon carbide, germanium, silicon germanium, silicon carbide, InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, ITO, FTO, and these To that, including those selected from the group consisting of combinations of, a method of manufacturing a deposition mask.

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