KR20210021334A - Display devices and methods of manufacturing display devices - Google Patents

Abstract

A display device includes: display structures disposed in a display area of a substrate; a plurality of blocking structures disposed in a peripheral area of the substrate and having different heights; at least one organic layer disposed on the display structures and the blocking structures; and at least one inorganic layer disposed on the organic layer. The display device can prevent leakage of the organic layer into the surrounding area, and block the propagation of damage such as cracks that may occur in the inorganic layer. In addition, since the display structures are effectively protected during the masking process for forming the light emitting layers, durability, reliability, and the like of the display device are improved.

Description

A display device and a manufacturing method of a display device TECHNICAL FIELD

The present invention relates to a display device and a method of manufacturing the display device. More specifically, the present invention relates to a display device including a plurality of blocking structures and a method of manufacturing the display device.

Typically, organic light emitting devices used in flexible display devices are vulnerable to moisture, oxygen, and the like, and thus organic layers and inorganic layers are alternately stacked to form an encapsulation film. However, in a conventional display device having an organic light-emitting device, the organic layers produced from a monomer are likely to leak to the peripheral area of the pixel, and in this case, the organic light-emitting device is caused by the penetration of moisture from the outside. There are problems that deteriorate and deteriorate the life and reliability of the display device. In addition, damage such as cracks is likely to occur in the inorganic layers, and such cracks propagate into the interior of the display device through the organic layers and other inorganic layers, further reducing the lifespan and reliability of the display device. . Moreover, there is a problem in that the underlying structures are easily damaged due to contact with the mask during the process of forming the organic layers.

An object of the present invention is to provide a display device including a plurality of blocking structures having different heights.

Another object of the present invention is to provide a method of manufacturing a display device including a plurality of blocking structures having different heights.

However, the objects of the present invention are not limited to the above objects, and may be variously extended without departing from the spirit and scope of the present invention.

In order to achieve an object of the present invention, a display device according to exemplary embodiments of the present invention includes a substrate including a display area and a peripheral area, display structures, a plurality of blocking structures, and at least one organic layer. , At least one inorganic layer, etc. may be included. The display structures may be disposed in the display area of the substrate. The plurality of blocking structures may have substantially different heights and may be disposed in a peripheral region of the substrate. The at least one organic layer may be disposed on the display structures and the blocking structures, and the at least one inorganic layer may be disposed on the at least one organic layer.

In example embodiments, each of the plurality of blocking structures may include a plurality of blocking patterns. For example, each of the plurality of blocking structures may include a metal layer pattern and at least one insulating layer pattern.

According to example embodiments, the display device may further include data lines, an insulating layer, and a protection member. The data lines may be disposed in a display area and a peripheral area of the substrate, and the insulating layer may cover the data lines. The protection member may be disposed on the outermost data line exposed by the insulating layer among the data lines and the insulating layer. In addition, each of the display structures may include a first electrode, a pixel defining layer, a spacer, an emission layer, and a second electrode. The first electrode may be disposed on the insulating layer, and the pixel defining layer may be disposed on the insulating layer to partially expose the first electrode. The spacer may be disposed on the pixel defining layer, and the emission layer may be disposed on the exposed first electrode. The second electrode may be disposed on the pixel defining layer, the spacer, and the emission layer.

In example embodiments, each of the plurality of blocking structures may include a first blocking structure, a second blocking structure, and a third blocking structure. For example, the first blocking structure may have a first height, the second blocking structure may have a second height substantially greater than the first height, and the third blocking structure may have the third height It may have a third height that is substantially larger than that. In this case, the first blocking structure may include a first metal layer pattern and a first insulating layer pattern, and the second blocking structure may include a second metal layer pattern, a second insulating layer pattern, and a third insulating layer pattern. I can. The third blocking structure may include a third metal layer pattern, a fourth insulating layer pattern, a fifth insulating layer pattern, and a sixth insulating layer pattern.

According to example embodiments, the first metal layer pattern may correspond to a part of the protection member, and the second metal layer pattern may correspond to a part of the outermost data line. The third metal layer pattern may include a material that is substantially the same as or similar to the data lines. Each of the first insulating layer pattern, the second insulating layer pattern, and the fourth insulating layer pattern may include a material that is substantially the same as or similar to the insulating layer of the display area. Each of the second insulating layer pattern and the fifth insulating layer pattern may include a material that is substantially the same as or similar to the pixel defining layer. The sixth insulating layer pattern may include a material substantially the same as or similar to the spacer.

In other exemplary embodiments, the display device may further include a fourth blocking structure adjacent to the third blocking structure in a peripheral area. For example, the fourth blocking structure may have substantially the same or similar height as the third blocking structure. The fourth blocking structure may include a fourth metal layer pattern, a seventh insulating layer pattern, an eighth insulating layer pattern, and a ninth insulating layer pattern. The fourth metal layer pattern may include the same material as or similar to the data lines, and the seventh insulation layer pattern may include the same material as or similar to the insulation layer. The eighth insulating layer pattern may include the same material as or similar to the pixel defining layer, and the ninth insulating layer pattern may include the same material as or similar to the spacer.

In still other exemplary embodiments, the display device may further include at least one additional blocking structure disposed between adjacent pixels. For example, the at least one additional blocking structure may have substantially the same or similar height as the third blocking structure. The at least one additional blocking structure may include a metal layer pattern and six insulating layer patterns.

In still other exemplary embodiments, the plurality of blocking structures may include a first blocking structure disposed on the outermost data line and a second blocking structure adjacent to the first blocking structure. In this case, the first blocking structure may include a metal layer pattern and two insulating layer patterns that are part of the outermost data line, and the second blocking structure may include a metal layer pattern and three insulating layer patterns. .

According to still other exemplary embodiments, the plurality of blocking structures may include a first blocking structure disposed on the protection member and a second blocking structure disposed on the outermost data line. Here, the first blocking structure may include a metal layer pattern and one insulating layer pattern that are part of the protection member, and the second blocking structure includes a metal layer pattern and two insulating layer patterns that are part of the outermost data line. Can include.

According to still other exemplary embodiments, the display device may include at least one additional blocking structure disposed between adjacent pixels.

In order to achieve another object of the present invention, in a method of manufacturing a display device according to exemplary embodiments of the present invention, after providing a substrate having a display area and a peripheral area, a plurality of displays in the display area are provided. Structures can be formed. A plurality of blocking structures having different heights may be formed in the peripheral area. At least one organic layer and at least one inorganic layer may be formed substantially alternately on the display structures and the blocking structures.

In example embodiments, transistors, interlayer insulating layers, and data lines may be formed on the substrate. An insulating layer may be formed on the interlayer insulating layer to cover the transistors and the data lines. A protection member may be formed on the outermost data line among the insulating layer and the data lines in the peripheral area.

In the process of forming the blocking structures according to exemplary embodiments, a metal layer pattern adjacent to the outermost data line may be formed. A first insulating layer pattern may be formed on a part of the outermost data line. A second insulating layer pattern may be formed on the metal layer pattern. For example, the data line and the metal layer pattern may be formed at the same time. In addition, the insulating layer and the first and second insulating layer patterns may be formed at the same time.

In the process of forming the display structures according to exemplary embodiments, after forming first electrodes on the insulating layer, a pixel defining layer and a spacer partially exposing the first electrodes are formed on the insulating layer. Can be formed. After forming emission layers on the exposed first electrodes, second electrodes may be formed on the emission layers, the pixel defining layer, and the spacer.

In the process of forming the blocking structures according to exemplary embodiments, a third insulating layer pattern may be formed on the protection member, and a fourth insulating layer pattern may be formed on the first insulating layer pattern. have. A fifth insulating layer pattern may be formed on the second insulating layer pattern, and a sixth insulating layer pattern may be formed on the fifth insulating layer pattern. For example, the third insulating layer pattern, the fourth insulating layer pattern, and the fifth insulating layer pattern may be formed simultaneously with the pixel defining layer. Also, the sixth insulating layer pattern may be formed simultaneously with the spacer.

Since the display device according to exemplary embodiments of the present invention may include a plurality of blocking structures that may have different heights, organic layers obtained by treating monomers are effectively prevented from leaking from the display area to the surrounding area. can do. In addition, it is possible to improve durability and reliability of the display device by blocking propagation of damage such as cracks that may occur in the inorganic layers. Moreover, since the lower structures located in the display area can be effectively protected during the masking process for forming the emission layers, durability and reliability of the display device can be further improved.

However, the effects of the present invention are not limited to the above-described effects, and may be variously extended without departing from the spirit and scope of the present invention.

1 is a cross-sectional view illustrating a display device according to exemplary embodiments of the present invention.
2 is a cross-sectional view illustrating a display device according to other exemplary embodiments of the present invention.
3 is a cross-sectional view illustrating a display device according to still another exemplary embodiment of the present invention.
4 is a cross-sectional view illustrating a display device according to still other exemplary embodiments of the present invention.
5 to 7 are cross-sectional views illustrating a method of manufacturing a display device according to exemplary embodiments of the present invention.
8 is a cross-sectional view illustrating a display device according to still another exemplary embodiment of the present invention.

In the exemplary embodiments of the present invention described in the present specification, specific structural or functional descriptions have been exemplified for the purpose of describing exemplary embodiments of the present invention only, and the present invention may be implemented in various forms. And is not to be construed as being limited to the embodiments described herein.

The present invention may include various modifications or changes and may have various forms. Specific embodiments are illustrated in the drawings and described in detail herein. However, this is not intended to limit the present invention to specific disclosed forms, and should be understood to include all modifications, changes, equivalents, substitutes, etc. included in the spirit and scope of the present invention.

Terms such as first, second, third, fourth, fifth, and sixth may be used to describe various elements, but the elements are not limited by the terms. These terms may be used for the purpose of distinguishing one component from another component. For example, without departing from the scope of the present invention, the first component may be named as any one of the second to sixth components, and similarly, the second to sixth components are also different components. It may be named as any one of them.

When a component is referred to as being "connected", "contacted" or "connected" to another component, it may be directly connected, contacted, or connected to the other component, but another component may exist in the middle. It should be understood that there is. Other expressions describing the relationship between components, such as "between" and "adjacent to" are interpreted as well.

Terms used in the present application are used only to describe exemplary embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, terms such as "comprise", "include", "contain" or "have" are intended to designate the presence of disclosed features, numbers, steps, actions, components, parts, or combinations thereof. , It is to be understood that it does not preclude the possibility of the presence or addition of one or more other features or numbers, steps, actions, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning of the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in this application. .

Hereinafter, display devices according to exemplary embodiments of the present invention will be described in more detail with reference to the accompanying drawings. In the drawings, the same or similar reference numerals are used for substantially the same or similar components.

1 is a cross-sectional view illustrating a display device according to exemplary embodiments of the present invention. 1 is a diagram illustrating, for example, a cross-section of a pixel positioned at an outer portion of the display device.

Referring to FIG. 1, a display device 10 according to exemplary embodiments may include a substrate 20, a peripheral circuit, display structures, and a plurality of blocking structures. .

In example embodiments, each of the display structures may include a first electrode 65, an emission layer 85, a second electrode 90, and the like. The plurality of blocking structures may have substantially different heights. Each of the first to third blocking structures 89, 100, and 115 may include a plurality of blocking patterns. Structures of the first to third blocking structures 89, 100, and 115 will be described later. The display device 10 illustrated in FIG. 1 includes a first blocking structure 98 having a first height, a second blocking structure 100 having a second height substantially greater than the first height, and the third height. A third blocking structure 115 having a third substantially greater height may be included. That is, the display device 10 may include a plurality of blocking structures having substantially increased heights toward the outer portion of the pixel.

The display device 10 may include a display area I (or an active area) and a peripheral area II. The display structures may be positioned in the display area I, and peripheral circuits and first to third blocking structures 98, 100, and 115 may be disposed in the peripheral area II. In example embodiments, the peripheral area I of the display device 10 corresponds to a peripheral circuit area in which the peripheral circuit is located and a dead space corresponding to an outermost portion of a pixel of the display device 10. It can be divided into areas. In this case, the plurality of blocking structures may be disposed in such a peripheral circuit area and a dead space area. For example, the first blocking structure 98 and the second blocking structure 100 may be disposed in the peripheral circuit area, and the third blocking structure 115 may be located in the dead space area.

In the display device 10 illustrated in FIG. 1, the substrate 20 may be formed of a soft transparent resin. For example, the substrate 20 is a polymethylmethacrylate resin, a polyimide resin, an acryl resin, a polyacrylate resin, a polycarbonate resin. Resin, polyether resin, sulfonic acid resin, polyethylene terephthalate resin, and the like. According to other exemplary embodiments, the substrate 20 may be formed of a transparent ceramic substrate such as a glass substrate, a quartz substrate, a translucent alumina substrate, or the like.

A buffer layer 25 may be disposed on the substrate 20. The buffer layer 25 may allow the display structures and upper structures including the plurality of blocking structures to be easily formed on the substrate 20. In addition, the buffer layer 25 may prevent diffusion of metal atoms or impurities from wires, patterns, and/or electrodes containing metal. Moreover, the buffer layer 25 controls the heat transfer rate during the heat treatment process for forming the active patterns of the first transistors 35 and the second transistors 40 to control the first and second transistors 35 and 40. ) May have substantially uniform active patterns. Here, the first transistors 35 may correspond to switching transistors of the display device 10, and the second transistors 40 may correspond to driving transistors of the display device 10. Meanwhile, the buffer layer 25 may serve to substantially improve the surface flatness of the substrate 20.

In example embodiments, the buffer layer 25 may have a substantially smaller area than the substrate 20. For example, the buffer layer 20 may expose a portion adjacent to an edge of the substrate 20. That is, a step may be generated between the substrate 20 and the buffer layer 25. The buffer layer 25 may be made of a silicone compound or a transparent resin. For example, the buffer layer 25 is made of silicon oxide, silicon nitride, silicon oxycarbide, silicon carbonitride, polyacrylate resin, polymethacrylate resin, olefin resin, and/or polyvinyl resin. It may include at least one buffer film containing. According to exemplary embodiments, the buffer layer 25 may include two buffer films made of different silicon compounds. Alternatively, the buffer layer 25 may have a structure in which at least one buffer film including a silicone compound and at least one buffer film including a transparent resin are substantially alternately stacked. However, the structure of the buffer layer 25 may vary depending on the configuration, dimensions, and usage of the display device 10.

A gate insulating layer 30 may be disposed on the buffer layer 25. In example embodiments, the gate insulating layer 30 may have an area substantially the same as or similar to the buffer layer 25. The gate insulating layer 30 may cover active patterns of the first and second transistors 35 and 40 positioned on the buffer layer 25. In this case, each of the active patterns may be made of polysilicon, oxide semiconductor, or the like. The gate insulating layer 30 may be formed of a silicon compound such as silicon oxide or silicon carbonate. Optionally, the gate insulating layer 30 may be made of a metal oxide such as hafnium oxide, aluminum oxide, zirconium oxide, titanium oxide, tantalum oxide, or the like.

Gate electrodes of the first and second transistors 35 and 40 may be positioned on portions of the gate insulating layer 30 covering the active patterns. Each of the gate electrodes may be made of a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. Although not shown, wirings such as gate lines electrically connected to the gate electrodes may be disposed on the gate insulating layer 30.

An interlayer insulating layer 45 covering the gate electrodes of the first and second transistors 35 and 40 may be disposed on the gate insulating layer 30. The interlayer insulating layer 45 may serve to separate gate electrodes of the first and second transistors 35 and 40 from upper wirings and/or electrodes. The interlayer insulating layer 45 may include a silicone compound, a transparent resin, or the like. For example, the interlayer insulating layer 45 is silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbide, polyacrylate resin, polymethacrylate resin, olefin resin, polyvinyl resin And the like.

Source electrodes and drain electrodes of the first and second transistors 35 and 40 may be disposed on the interlayer insulating layer 45. In addition, data lines 50 and 55 electrically connected to drain electrodes of the first and second transistors 35 and 40 may be positioned on the interlayer insulating layer 45. Source electrodes and drain electrodes of the first and second transistors 35 and 40 may each include a metal, an alloy, a conductive metal oxide, a transparent conductive material, and the like. The source electrodes and drain electrodes may each pass through the interlayer insulating layer 45 to be connected to the active patterns.

As illustrated in FIG. 1, an insulating layer 60 may be disposed to cover the first transistors 35 and the data lines 50 in the display area I. In addition, the insulating layer 60 may extend to the peripheral region II to partially cover the outermost data line 55 while covering the second transistors 40. The insulating layer 60 may insulate the first transistors 35 from the first electrodes 35 of the display structures in the display region I.

The insulating layer 60 may be made of an organic material. For example, the insulating layer 60 is made of, for example, a polyimide resin, a photoresist, an acrylic resin, a polyamide resin, a siloxane resin, etc. Can include. These may be used alone or in combination with each other. The insulating layer 60 may have a single-layer structure or a multi-layer structure containing the aforementioned resins. In other exemplary embodiments, the insulating layer 60 may be formed of an inorganic material such as a silicon compound or a metal oxide. For example, the insulating layer 50 is silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, aluminum oxide, titanium oxide, tantalum oxide, magnesium oxide, zinc oxide, hafnium oxide, zirconium oxide, titanium It may contain oxides and the like.

Although not illustrated in FIG. 1, the peripheral circuit covered by the insulating layer 60 includes a gate driver, a data driver, and a timing in addition to the data lines including the second transistors 40 and the outermost data line 55. It may include a controller or the like.

The first electrodes 65 may be disposed on the insulating layer 60 in the display area I. Each of the second electrodes 65 may be electrically connected to the drain electrodes of the first transistors 35 through contacts 75 formed through the insulating layer 60, respectively. In the display area I, adjacent first electrodes 65 may be spaced apart from each other by a predetermined interval. Each of the first electrodes 65 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. For example, each of the first electrodes 65 is aluminum, an alloy containing aluminum, aluminum nitride, silver, an alloy containing silver, tungsten, tungsten nitride, copper, an alloy containing copper, nickel, chromium, Chromium nitride, molybdenum, alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, indium tin oxide, indium zinc oxide, zinc tin oxide, zinc oxide, tin oxide, indium Oxide, gallium oxide, and the like. These may be used alone or in combination with each other.

In the display area I of the display device 10 illustrated in FIG. 1, a pixel defining layer 80 may be disposed on the insulating layer 60. The pixel defining layer 80 may include openings each exposing the first electrodes 65. Light emitting regions of the display device 10 may be limited by the openings of the pixel defining layer 80. The pixel defining layer 80 may extend over a portion of the insulating layer 60 covering the data line 50 positioned in the display area I. The pixel defining layer 80 may include an organic material. For example, the pixel defining layer 80 may contain a polyimide resin, a photoresist, a polyacrylic resin, a polyamide resin, an acrylic resin, or the like. Although not shown, a spacer for maintaining a cell gap of the pixel may be disposed on the pixel defining layer 80 in the display area I. In example embodiments, the spacer may contain substantially the same material as the pixel defining layer 80. In this case, the pixel defining layer 80 and the spacer may be obtained through an etching process using a halftone mask, a halftone slit mask, or the like.

In the peripheral region II of the display device 10, the protective member 70 may be disposed on the upper and the side portions of the insulating layer 60. The protection member 70 may serve to protect the peripheral circuit located in the peripheral region II from static electricity and impact. In example embodiments, the protection member 70 may extend from the side of the pixel defining layer 80 onto the outermost data line 55 located in the peripheral region II. For example, the protective member 70 may be in contact with the side surface of the pixel defining layer 80, and may extend onto the outermost data line 55 while substantially surrounding the side of the insulating layer 60. .

The protection member 70 may be made of substantially the same material as the first electrodes 65. For example, in the protection member 70, the first electrodes 65 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. In other exemplary embodiments, the protective member 70 may also have a single layer structure or a multilayer structure including the above-described metal, alloy, metal nitride, conductive metal oxide, and/or transparent conductive material. As described later, a part of the protection member 70 may function as a first metal layer pattern of the first blocking structure 98. For example, the first blocking structure 98 may include a first metal layer pattern and a first insulating layer pattern 95 that are part of the protection member 70.

Emission layers 85 may be respectively disposed on the first electrodes 65 exposed by the openings of the pixel defining layer 80. Each of the emission layers 85 may have a multilayer structure including an organic emission layer EL, a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and an electron injection layer EIL. The organic emission layers of the emission layers 85 may include light-emitting materials capable of generating different color lights, such as red light, green light, and blue light, depending on the type of pixels of the display device 10. In other exemplary embodiments, the organic emission layer of each emission layer 85 may emit white light as a whole by stacking a plurality of emission materials capable of generating different color lights such as red light, green light, and blue light.

A second electrode 90 may be disposed on the emission layers 85 and the pixel defining layer 85 and the spacer. The second electrode 90 may extend onto the protection member 70 in the peripheral region II. That is, in the peripheral area II of the display device 10, the second electrode 90 may partially overlap the protective member 70. The second electrode 90 may correspond to a common electrode shared by adjacent pixels. The second electrode 90 may be made of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

As illustrated in FIG. 1, first to third blocking structures 98, 100, and 115 each having a plurality of blocking patterns may be disposed in the peripheral area II of the display device 10.

In example embodiments, the first blocking structure 98 having the first height may be located on the outermost data line 55. The first blocking structure 98 may include the first metal layer pattern and the first insulating layer pattern 95. In the first blocking structure 98 including the first metal layer pattern and the first insulating layer pattern 95, the first organic layer 140 and/or the second organic layer 150 of the display device 10 is a peripheral area ( II) leakage can be prevented firstly. Here, the first metal layer pattern may correspond to a part of the protection member 70, and the first insulating layer pattern 95 may be disposed on the first metal layer pattern. The first metal layer pattern may allow the first insulating layer pattern 95 to be easily formed. In the display device shown in FIG. 1, although the first organic layer 140 is illustrated as being spaced apart from the first blocking structure 98, the first organic layer 140 is in contact with the first blocking structure 98 and thus a peripheral area Leakage can be prevented with (II). That is, even if the thickness of the first organic layer 140 increases, the first blocking structure 98 can sufficiently block leakage of the first organic layer 140.

The first blocking structure 98 may have a first height substantially higher than the height of the insulating layer 60 of the display area I by the thickness of the outermost data line 55 and the thickness of the protection member 70. . In other exemplary embodiments, when the display device 10 does not include the protection member 70, the first metal layer pattern of the first blocking structure 98 is partially formed on the outermost data line 55. May be applicable. In this case, the first height of the first blocking structure 98 may be substantially larger than the insulating layer 60 by the thickness of the outermost data line 55. The first insulating layer pattern 95 may include a material that is substantially the same as or similar to the pixel defining layer 140 of the display area I. For example, the first insulating layer pattern 95 may include a polyimide resin, a photoresist, an acrylic resin, a polyamide resin, a siloxane resin, or the like. These may be used alone or in combination with each other.

The second blocking structure 100 may be disposed adjacent to the first blocking structure 98. The second blocking structure 100 may include a second metal layer pattern 58, a second insulating layer pattern 105, and a third insulating layer pattern 110. The second blocking structure 100 may secondaryly prevent leakage of the first organic layer 140 and/or the second organic layer 150 to the peripheral region II. For example, when the second organic layer 150 exceeds the first blocking structure 98, the second blocking structure 100 may block leakage of the second organic layer 150. The second thickness of the second blocking structure 100 may be substantially higher than the first thickness of the first blocking structure 98 by the thickness of the third insulating layer pattern 110.

In example embodiments, the second metal layer pattern 58 may correspond to a side portion of the outermost data line 55. The second insulating layer pattern 105 may be disposed on the interlayer insulating layer 45 while covering the second metal layer pattern 58. For example, one side of the outermost data line 55 is covered by the second insulating layer pattern 105, and the central portion of the outermost data line 55 is covered by the protection member 70, and The other side of the outer data line 55 may be covered by the insulating layer 60. Here, the protection member 70 may extend to a side portion and a portion of the upper surface of the second insulating layer pattern 105. Accordingly, one side of the protection member 70 may be interposed between the second insulating layer pattern 105 and the third insulating layer pattern 110. The second metal layer pattern 58 may facilitate formation of the second insulating layer pattern 105. The second insulating layer pattern 105 may include a material that is substantially the same as or similar to the insulating layer 60 of the display area I. In this case, the second insulating layer pattern 105 may be obtained through the same formation process as the insulating layer 60. For example, the second insulating layer pattern 105 may include a polyimide resin, a photoresist, an acrylic resin, a polyamide resin, a siloxane resin, or the like. These may be used alone or in combination with each other. Unlike this, the second insulating layer pattern 105 may be made of an inorganic material such as a silicon compound or a metal oxide. The third insulating layer pattern 110 may include a material that is substantially the same as or similar to the pixel defining layer 80 of the display area I. For example, the third insulating layer pattern 110 may be formed of a polyimide resin, a photoresist, an acrylic resin, a polyamide resin, a siloxane resin, or the like. These may be used alone or in combination with each other. Here, the third insulating layer pattern 110 and the pixel defining layer 80 may be obtained through the same process.

In the display device 10 illustrated in FIG. 1, the third blocking structure 115 may be positioned adjacent to the second blocking structure. In example embodiments, the first and second blocking structures 98 and 100 may be disposed in the peripheral circuit area of the peripheral area I, and the third blocking structure 115 is located in the dead space area. can do. The third blocking structure 115 is formed of the second blocking structure 100 and the pixel by disposing a mask on the pixel defining layer 80 and/or the spacer to form the emission layers 85 of the display area I. Damage to structures under the pixel including the definition layer 80 may be prevented. In addition, in the third blocking structure 115, damage such as a crack that may occur in the first inorganic layer 140 and/or the second inorganic layer 150 is prevented from the display area I from the peripheral area II. ) Can be blocked. Moreover, the third blocking structure 115 finally blocks the leakage of the second organic layer 150 to the peripheral region II, while the display device 10 provides additional organic and inorganic layers (not shown). If included, it is possible to prevent such additional organic layers from leaking into the peripheral region II.

In example embodiments, the third blocking structure 115 includes the third metal layer pattern 120, the fourth insulating layer pattern 125, the fifth insulating layer pattern 130, and the sixth insulating layer pattern 135. It may include. The third height of the third blocking structure 115 may be substantially greater than the second height of the second blocking structure 100 by the height of the sixth insulating layer pattern 120. Accordingly, the display device 10 may include first to third blocking structures 98, 110, and 115 having first to third heights that increase toward the outside.

The third metal layer pattern 120 may be formed of a material that is substantially the same as or similar to the data lines 50 and 55. The third metal layer pattern 120 may facilitate formation of the fourth insulating layer pattern 125. In example embodiments, the third metal layer pattern 120 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. For example, the third metal layer pattern 120 is aluminum, an alloy containing aluminum, aluminum nitride, silver, an alloy containing silver, tungsten, tungsten nitride, copper, an alloy containing copper, nickel, chromium, chromium nitride , Molybdenum, alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium It may be made of zinc oxide or the like. These may be used alone or in combination with each other. The third metal layer pattern 120 may be obtained through the same process as the data lines 50 and 55. That is, the first metal layer pattern, the second metal layer pattern 58, and the third metal layer pattern 120 may be formed substantially simultaneously.

The fourth insulating layer pattern 125 of the third blocking structure 115 may be made of a material that is substantially the same as or similar to the insulating layer 60 of the display area I. That is, the fourth insulating layer pattern 125 may include substantially the same material as the first insulating layer pattern 95 and the second insulating layer pattern 105. Accordingly, the insulating layer 60, the first insulating layer pattern 95, the second insulating layer pattern 105, and the fourth insulating layer pattern 125 may be obtained through the same process. The fifth insulating layer pattern 130 may include a material that is substantially the same as or similar to the pixel defining layer 80 of the display area I. For example, the third insulating layer pattern 110, the fifth insulating layer pattern 130, and the pixel defining layer 80 may be obtained by the same process. The sixth insulating layer pattern 135 may be made of a material that is substantially the same as or similar to the spacer in the display area I. In example embodiments, the third insulating layer pattern 120, the fifth insulating layer pattern 120, and the sixth insulating layer pattern 135 are formed in the pixel defining layer 80 and the transistor in the display area I. Can be obtained in the process of forming.

As described above, the display device 10 according to exemplary embodiments includes a first blocking structure 98 including two blocking patterns, a third blocking structure 100 including three blocking patterns, and four blocking structures. A third blocking structure 115 including blocking patterns may be provided. That is, since the number and type of blocking patterns of the first to third blocking structures 98, 100, and 110 may be different, each of the first to third blocking structures 98, 100, and 110 It can have 1 to 3 heights.

Referring again to FIG. 1, a first organic layer 140 covering the display structures in the display area I and the first to third blocking structures 98, 100, and 110 in the peripheral area II is disposed. Can be. The first organic layer 140 may improve flatness of the display device 10, and the display region I may perform a function of protecting the display structures. In addition, the first organic layer 140 may prevent diffusion of impurities from underlying structures. For example, the first organic layer 140 may include a polyimide resin, a polyacrylic resin, a polyamide resin, or the like.

A first inorganic layer 145 may be disposed on the first organic layer 140. The first inorganic layer 140 may prevent deterioration of the first organic layer 140 and the display structures due to penetration of moisture or oxygen. Further, the first inorganic layer 145 may also perform a function of protecting the first organic layer 140 and the display structures from external impact. The first inorganic layer 145 may be formed of a metal compound. For example, the first inorganic layer 145 is silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, aluminum And the like.

A second organic layer 150 may be disposed on the first inorganic layer 145. The second organic layer 150 may perform a function substantially the same as or similar to the first organic layer 140, and may be formed of a material substantially the same or similar to the first organic layer 140. A second inorganic layer 155 may be positioned on the second organic layer 150. The second inorganic layer 155 may perform a role substantially the same as or similar to the first inorganic layer 145, and may be formed of a material substantially the same or similar to the first inorganic layer 145.

According to exemplary embodiments, since the display device 10 may include the first to third blocking structures 98, 100, and 115 having the above-described configurations, the first organic layer obtained by processing monomers It is possible to effectively prevent a phenomenon in which the 140 and/or the second organic layer 150 leaks from the display region I to the peripheral region II. In addition, by blocking propagation of damage such as cracks that may occur in the first inorganic layer 145 and/or the second inorganic layer 155, durability and reliability of the display device 10 may be improved. Furthermore, during the masking process for forming the light emitting layers 85, the lower structures located in the display area I can be effectively protected, and thus durability and reliability of the display device 10 can be further improved.

In other exemplary embodiments, the display device 10 may include at least one additional organic layer and at least one additional inorganic layer according to its use, dimensions, and components. Even when a plurality of additional organic layers are disposed by the second blocking structure 100 and/or the third blocking structure 155, leakage of the additional organic layers toward the surrounding area can be effectively prevented.

2 is a cross-sectional view illustrating a display device according to other exemplary embodiments of the present invention. In FIG. 2, the same reference numerals are used for components described with reference to FIG. 1, and detailed descriptions of these components are omitted. The display device illustrated in FIG. 2 is substantially the same as or similar to the display device 10 described with reference to FIG. 1 except for the fourth blocking structure 160 that may be disposed adjacent to the third blocking structure 115. Can have a composition.

Referring to FIG. 2, the fourth blocking structure 160 may have a fourth height substantially the same as or similar to the third blocking structure 115, and a blocking pattern that is substantially the same or similar to the third blocking structure 115 Can include. That is, in addition to the first and second blocking structures 98 and 100 that may be disposed in the peripheral area II, the display device includes two blocking structures 115 having substantially the same or similar configuration adjacent to the outer portion. , 160) may be provided.

The fourth blocking structure 160 may include a fourth metal layer pattern 165, a seventh insulating layer pattern 170, an eighth insulating layer pattern 175, and a ninth insulating layer pattern 190. The fourth metal layer pattern 165 may be formed of a material that is substantially the same as or similar to the third metal layer pattern 120. In addition, the seventh to ninth insulating layer patterns 170, 175, and 180 may be made of materials that are substantially the same as or similar to the fourth to sixth insulating layer patterns 120, 125, and 130, respectively.

Since the display device may additionally include the fourth blocking structure 160, it is possible to effectively prevent the first organic layer 140, the second organic layer 150, and/or the additional organic layers from leaking into the peripheral area II. have. In addition, it is possible to block the propagation of damage such as cracks that may occur in the first inorganic layer 145, the second inorganic layer 155 and/or additional inorganic layers, and a process for forming the light emitting layers 85 Since the lower structures positioned in the display area I can be efficiently protected, durability and reliability of the display device can be further improved.

3 is a cross-sectional view illustrating a display device according to still another exemplary embodiment of the present invention. In the display device illustrated in FIG. 3, the first blocking structure 100 ′ and the second blocking structure 115 ′ are each of the second blocking structure 100 and the third blocking structure 115 described with reference to FIG. 1. It may have a configuration substantially the same as or similar to. That is, the second blocking structure 100 and the third blocking structure 115 of FIG. 1 may substantially correspond to the first blocking structure 100 ′ and the second blocking structure 115 ′ of FIG. 3. The display device illustrated in FIG. 3 is substantially the same as or similar to the display device 10 described with reference to FIG. 1 except for the first blocking structure 98 in the display device 10 described with reference to FIG. 1. Can have That is, in FIG. 3, the blocking structure may not be disposed on the protection member 75.

In still other exemplary embodiments, the first blocking structure 100 ′ may include a first metal layer pattern 58 ′, a first insulating layer pattern 105 ′, and a second insulating layer pattern 110 ′. I can. In this case, the first metal layer pattern 58 ′, the first insulating layer pattern 105 ′, and the second insulating layer pattern 110 ′ are respectively the second metal layer pattern 58 and the second insulating layer described with reference to FIG. 1. The layer pattern 105 and the third insulating layer pattern 110 may be substantially the same or similar to each other. The second blocking structure 115 ′ may include a second metal layer pattern 120 ′, a third insulation layer pattern 125 ′, a fourth insulation layer pattern 130 ′, and a fifth insulation layer pattern 135 ′. I can. Here, the second metal layer pattern 120 ′, the third insulating layer pattern 125 ′, the fourth insulating layer pattern 130 ′, and the fifth insulating layer pattern 135 ′ are respectively described with reference to FIG. 1. The metal layer pattern 120, the fourth insulating layer pattern 125, the fifth insulating layer pattern 130, and the sixth insulating layer pattern 135 may be substantially the same or similar to each other.

According to another embodiment, since the display device may include two blocking structures 100 ′ and 115 ′ having different heights, when additional organic layers are not excessively disposed, Leakage of the first organic layer 140 and/or the second organic layer 150 may be blocked. In addition, it is possible to prevent the lower structures from being damaged during the process of forming the emission layers 85 by the second blocking structure 115 ′. Furthermore, it is possible to prevent a phenomenon in which damage such as a crack in the first inorganic layer 145 and/or the second inorganic layer 155 propagates to the display area I. Meanwhile, since the display device illustrated in FIG. 3 may include two blocking structures 100 ′ and 115 ′, the display device may have a relatively small dimension.

4 is a cross-sectional view illustrating a display device according to still other exemplary embodiments of the present invention. In FIG. 4, the same reference numerals are used for components described with reference to FIG. 1, and detailed descriptions of these components are omitted. The display device illustrated in FIG. 4 has a configuration substantially the same as or similar to the display device 10 described with reference to FIG. 1 except for the third blocking structure 115 from the display device 10 described with reference to FIG. 1. Can have.

The display device illustrated in FIG. 4 may include a first blocking structure 98 and a second blocking structure 100. The first blocking structure 98 may be disposed on the protection member 70, and the second blocking structure 100 is located on the outermost data line 55 partially exposed by the insulating layer 60 can do.

In still other exemplary embodiments, since the blocking structures 98 and 100 of the display device may be positioned adjacent to the display area I, the dimensions of the display device may be relatively reduced. Unless the display device includes many additional organic layers, the first and second blocking structures 98 and 100 are formed of the first organic layer 140 and/or the second organic layer 150 facing the peripheral region II. Leakage can be sufficiently prevented. In addition, it is possible to prevent a phenomenon in which damage such as a crack of the first inorganic layer 145 and/or the second inorganic layer 155 propagates to the display area I.

5 to 7 are cross-sectional views illustrating a method of manufacturing a display device according to exemplary embodiments of the present invention. In FIGS. 5 to 7, a method of manufacturing a display device having a configuration substantially the same as or similar to that of the display device described with reference to FIG. 1 is described, but the same process as the patterning process for those of ordinary skill in the art. It will be appreciated that any one of the display devices described with reference to FIGS. 2 to 4 may be manufactured through obvious changes of FIG.

Referring to FIG. 5, a substrate 220 including a display region III and a peripheral region IV may be provided. In this case, the peripheral region of the substrate 220 may include a peripheral circuit region in which a peripheral circuit may be formed and a dead space region corresponding to an outermost portion of a pixel of the display device. The substrate 220 may be formed using a transparent resin. Optionally, the substrate 220 may be formed of a transparent ceramic substrate.

A buffer layer 225 may be formed on the substrate 220. The buffer layer 225 may extend from the display area I of the group 220 to the peripheral area II. The buffer layer 225 may be formed using a silicone compound, a transparent resin, or the like. For example, the buffer layer 225 is formed using silicon oxide, silicon nitride, silicon oxycarbide, silicon carbonitride, polyacrylate resin, polymethacrylate resin, olefin resin and/or polyvinyl resin Can be. In addition, the buffer layer 225 may be formed using a spin coating process, a printing process, a heat treatment process, a chemical vapor deposition process, or the like.

In exemplary embodiments, the buffer layer 225 is formed by depositing different silicon compounds on the substrate 220 to form a plurality of buffer films to obtain the buffer layer 225, or at least one buffer film including a silicon compound. And at least one buffer film including a transparent resin may be alternately stacked to obtain the buffer layer 225. According to other exemplary embodiments, the buffer layer 225 may not be formed on the substrate 220 depending on the constituent material of the substrate 220 and the surface condition.

First active patterns 230 and second active patterns 235 may be formed on the buffer layer 225. The first active patterns 230 may be formed in the display area III, and the second active patterns 235 may be formed in the peripheral area IV. In example embodiments, after forming a semiconductor layer (not shown) on the buffer layer 225, the semiconductor layer is patterned to form preliminary first active patterns (not shown) in the display area III. May be formed, and preliminary second active patterns (not shown) may be formed in the peripheral area IV. The first and second active patterns 230 and 235 may be obtained by performing a heat treatment process, a laser irradiation process, and a heat treatment process using a catalyst on the preliminary first and third active patterns. In this case, the semiconductor layer may be formed of amorphous silicon or amorphous silicon containing impurities. In addition, the semiconductor layer may be formed using a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a low pressure chemical vapor deposition process, a sputtering process, or the like. The first and second active patterns 230 and 235 may be formed of polysilicon, polysilicon including impurities, partially crystalline silicon, silicon including fine crystals, and oxide semiconductors, respectively.

Referring again to FIG. 5, a gate insulating layer 240 covering the first and second active patterns 230 and 235 is formed on the buffer layer 225. The gate insulating layer 240 may be formed substantially uniformly on the buffer layer 225 and may have an area substantially the same as or similar to the buffer layer 225. The gate insulating layer 240 may be formed using a silicon compound such as silicon oxide or silicon carbonate. In addition, the gate insulating layer 240 may be obtained using a chemical vapor deposition process, a spin coating process, a plasma enhanced chemical vapor deposition process, a sputtering process, a vacuum deposition process, a high density plasma chemical vapor deposition process, and a printing process. In other exemplary embodiments, the gate insulating layer 240 includes a metal oxide such as hafnium oxide, aluminum oxide, zirconium oxide, titanium oxide, tantalum oxide, etc. on the buffer layer 225 by a chemical vapor deposition process, a spin coating process, Plasma enhanced chemical vapor deposition process, sputtering process, vacuum deposition process, high-density plasma chemical vapor deposition process can be obtained by depositing.

Referring to FIG. 6, a part of the substrate 220 may be exposed by partially removing the gate insulating layer 240 and the buffer layer 225. For example, portions adjacent to the edge portions of the substrate 220 may be exposed as the gate insulating layer 240 and the buffer layer 225 are partially removed. Accordingly, a step may be generated between the substrate 220 and the gate insulating layer 240 and the buffer layer 225.

The first gate electrodes 245 and the second gate electrodes 250 may be formed on the gate insulating layer 240. The first and second gate electrodes 245 and 250 may be formed using a metal, an alloy, a conductive metal oxide, a transparent conductive material, or the like. In addition, the first and second gate electrodes 245 and 250 may be obtained using a sputtering process, a chemical vapor deposition process, a pulse laser deposition process, a vacuum deposition process, an atomic layer deposition process, or the like. The first gate electrodes 245 may be formed on portions of the gate insulating layer 240 of the display region III where the first active patterns 230 (refer to FIG. 5) are positioned below. In addition, the second gate electrodes 250 may be formed on portions of the gate insulating layer 240 of the peripheral region IV where the second active patterns 235 (see FIG. 5) are disposed below. .

Although not shown, gate lines electrically connected to the first and second gate electrodes 245 and 250 may be formed on the gate insulating layer 240 of the display region III and the peripheral region IV. In addition, by implanting impurities into the first and second active patterns 230 and 235 using the first and second gate electrodes 245 and 250 as masks, the first and second active patterns 230 Source regions and drain regions may be formed in each of 235.

The interlayer insulating layer 290 may be formed on the gate insulating layer 240 to cover the first and second gate electrodes 245 and 250. The interlayer insulating layer 290 may be formed using a silicone compound, a transparent resin, or the like. In addition, the interlayer insulating layer 290 may be formed using a printing process, a spin coating process, a chemical vapor deposition process, or the like.

The interlayer insulating layer 290 may be partially etched to form contact holes exposing the drain regions and the source regions of the first and second active patterns 230 and 235. The first drain electrodes 255, the first source electrodes 260, the second drain electrodes 265 and the second source electrodes 270 are formed on the interlayer insulating layer 290 while filling these contact holes. Can be formed. At the same time, data lines 295 and 300 may be formed on the interlayer insulating layer 290 in the display and peripheral regions III and IV. These data lines 295 and 300 may be electrically connected to the first and second source electrodes 260 and 270.

In example embodiments, after forming a conductive layer (not shown) while filling the contact holes on the interlayer insulating layer 290, the first and second drain electrodes 255 are patterned by patterning the conductive layer. , 265), first and second source electrodes 260 and 270, and data lines 295 and 300 may be obtained. The conductive layer may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. For example, the conductive layer is aluminum, an alloy containing aluminum, aluminum nitride, silver, an alloy containing silver, tungsten, tungsten nitride, copper, an alloy containing copper, nickel, chromium, chromium nitride, molybdenum , Alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. Can be done. These may be used alone or in combination with each other. In addition, the conductive layer may be formed using a printing process, a sputtering process, a vacuum deposition process, a chemical vapor deposition process, or the like.

The first and second drain electrodes 255 and 265 may be connected to the drain regions of the first and second active patterns 230 and 235, respectively, and the first and second source electrodes 260 and 270 ) May be connected to source regions of the first and second active patterns 230 and 235, respectively. According to the formation of the first and second drain electrodes 255 and 265 and the first and second source electrodes 260 and 270, the first transistors 275 and the second transistors are formed on the substrate 220. 280 may be formed. The first transistors 275 and the second transistors 280 may be formed in the display area III and the peripheral area IV, respectively.

As illustrated in FIG. 6, while the data lines 295 and 300 are formed, a metal layer pattern 305 adjacent to the outermost data line 303 may be simultaneously formed in the peripheral area IV. According to exemplary embodiments, the insulating layer pattern of the blocking structure may be difficult to be formed directly on the interlayer insulating layer 290. When the metal layer pattern 305 is interposed between the interlayer insulating layer 290 and the insulating layer pattern of the blocking structure, the insulating layer pattern of the blocking structure may be formed relatively easily. For example, the metal layer pattern 305 may improve structural stability of the blocking structure. As will be described later, when the display device includes the first to third blocking structures 370, 380, and 390 (see FIG. 7), the metal layer pattern 305 is a third blocking structure of the third blocking structure 390. It may correspond to a metal layer pattern. Here, a part 303 of the outermost data line 303 may be a second metal layer pattern of the second blocking structure 380, and a part of the subsequent protective member 340 is the first blocking structure ( It may correspond to the first metal layer pattern of 370.

The insulating layer 310 covering the first transistors 275 and the data line 295 in the display area III and the second transistors 280 and the peripheral circuits in the peripheral area IV is an interlayer insulating layer 290 It can be formed on. The insulating layer 310 may extend to cover one side of the outermost data line 300. The insulating layer 310 may be formed using an organic material such as a polyimide resin, a photoresist, an acrylic resin, a polyamide resin, or a siloxane resin. For example, the insulating layer 310 may be formed using a printing process, an inkjet process, a spin coating process, or the like. Optionally, the insulating layer 310 may be formed by using an inorganic material such as a silicon compound or a metal oxide.

In example embodiments, the insulating layer patterns 325 and 330 may be formed in the peripheral region IV while the insulating layer 310 is formed. That is, the insulating layer 310 and the insulating layer patterns 325 and 330 may be formed at the same time. Here, one insulating layer pattern 325 may be formed on a part of the outermost data line 300, and the other insulating layer pattern 330 may be formed on the metal layer pattern 305. One side of the outermost data line 300 may be covered by the insulating layer 310, and the other side of the outermost data line 300 may be covered by the insulating layer pattern 325. As described above, the insulating layer patterns 325 and 330 made of an organic material may be relatively easily formed on the outermost data line 300 and the metal layer pattern 305.

Referring back to 6, the insulating layer 335 of the display region III may be partially etched to form contact holes exposing the first drain electrodes 255 of the first transistors 275. Contacts 315 and first electrodes 335 may be formed on the insulating layer 335 of the display area III while filling the contact holes. In this case, a protection member 340 may be formed on the insulating layer 310 of the peripheral area IV and the outermost data line 300. The first electrodes 255 and the protection member 340 may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. In addition, the first electrodes 255 and the protection member 340 may be obtained using a sputtering process, a printing process, a chemical vapor deposition process, a vacuum deposition process, or the like.

Each of the first electrodes 335 may be electrically connected to the first drain electrodes 255 through contacts 315 formed on the insulating layer 330, respectively. The protection member 340 may extend from the upper surface of the insulating layer 310 to the upper surface of the insulating layer pattern 325 while covering the exposed portion of the outermost data line 300 in the peripheral region IV. In example embodiments, a part of the protection member 340 formed on the outermost data line 300 may function as a first metal layer pattern of the first blocking structure 370. In addition to the second transistors 280 and the outermost data line 300, the protection member 340 functions to protect the peripheral circuits including a gate driver, a data driver, and a timing controller from static electricity and shock. I can.

Referring to FIG. 7, a pixel defining layer 345 having openings partially exposing the first electrodes 335 is formed on the first electrodes 335 and the insulating layer 310 in the display area III. can do. In this case, the first insulating layer pattern 320, the second insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are on the protective member 340 of the peripheral area IV. Can be formed. The first insulating layer pattern 320 may be formed on the protective member 340, and the third insulating layer pattern may be formed on the protective member 340 and one insulating layer pattern 325 already formed. The fifth and sixth insulating layer patterns 355 and 360 may be sequentially formed on the other previously formed insulating layer pattern 330. Although not shown, the sixth insulating layer pattern 360 may be obtained during the process of forming a spacer on the pixel defining layer 345. For example, while the pixel defining layer 345 and the spacer are formed in the display area III using a halftone mask, a halftone slit mask, or the like, a first insulating layer pattern 320 is formed in the peripheral area III. , A third insulating layer pattern 350, a fifth insulating layer pattern 355, and a sixth insulating layer pattern 360 may be formed.

According to the formation of the first insulating layer pattern 320, a first blocking structure 370 including a first metal layer pattern and a first insulating layer pattern 320 corresponding to a part of the protection member 340 may be obtained. I can. In addition, the insulating layer patterns 325 previously formed according to the first insulating layer pattern 320 may be referred to as a second insulating layer pattern and a fourth insulating layer pattern, respectively. Accordingly, the second blocking structure 380 including the second metal layer pattern 303, the second insulating layer pattern 325, and the third insulating layer pattern 350 is formed on the outermost data line 300. I can. In addition, the third blocking structure 390 including the third metal layer pattern 305, the fourth insulating layer pattern 330, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 is a second blocking layer. It may be formed adjacent to the structure 380.

In example embodiments, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 Each can be formed using organic materials. For example, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are polyimide-based. It can be formed using resin, photoresist, polyacrylic resin, polyamide resin, acrylic resin, or the like. In addition, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are a printing process and an inkjet process. , It may be formed through a spin coating process.

Emission layers 365 may be formed on the first electrodes 335 exposed by the openings of the pixel defining layer 345. In the process of forming the emission layers 365, an organic emission layer EL, a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and electron injection are formed on each of the first electrodes 335 Layers (EIL) and the like may be sequentially formed. Here, the organic emission layer may be formed using light-emitting materials capable of generating different color lights such as red light, green light, and blue light according to the type of pixels of the display device. Optionally, the organic light emitting layer may be formed by stacking a plurality of light emitting materials capable of generating different color lights such as red light, green light, and blue light so as to generate white light.

In example embodiments, while a mask (not shown) is disposed on the pixel defining layer 345 and the spacer to form the emission layers 365 in the display area III, the peripheral area IV The second blocking structure 380 and/or the third blocking structure 390 formed in the mask may prevent damage to the lower structures due to the mask. For example, by contacting the second blocking structure 380 and/or the third blocking structure 390 with the mask, damage to the lower structure due to the contact between the lower structure and the mask may be prevented.

A second electrode 370 may be formed on the emission layers 365, the pixel defining layer 345, and the spacer. The second electrode 370 may extend over a portion of the protective member 340 in contact with the pixel defining layer 345. The second electrode 370 may be formed of a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like.

As illustrated in FIG. 7, a first organic layer 395 covering the display structures in the display area III and the first to third blocking structures 370, 380, and 390 in the peripheral area IV is formed. I can. The first organic layer 395 may be formed using a polyimide resin, a polyacrylic resin, a polyamide resin, or the like. In addition, the first organic layer 395 may be obtained using a printing process, an ink jet process, a spin coating process, a vacuum deposition process, or the like. In exemplary embodiments, after applying the monomer capable of forming the above-described resin on the display structures and the first to third blocking structures 370, 380, 390, heat treatment or The first organic layer 395 may be obtained by performing ultraviolet treatment. While forming the first organic layer 395 as described above, the first blocking structure 370 may primarily block leakage of the first organic layer 395 to the peripheral region IV.

A first inorganic layer 400 may be formed on the first organic layer 395. The first inorganic layer 400 may be obtained by depositing a metal compound through a vacuum deposition process, a sputtering process, a chemical vapor deposition process, or the like.

Although not shown, a display device having a configuration substantially the same as or similar to the display device 10 described with reference to FIG. 1 can be obtained by alternately stacking an additional organic layer and an additional inorganic layer on the first inorganic layer 400. have. Optionally, two or more organic layers and two or more inorganic layers may be alternately stacked on the first inorganic layer 400.

8 is a cross-sectional view illustrating a display device according to still another exemplary embodiment of the present invention. In the display device illustrated in FIG. 8, the same reference numerals are used for the components described with reference to FIG. 1, and detailed descriptions of these components are omitted.

Referring to FIG. 8, the display device may include one or more additional blocking structures 185 disposed in a region between pixels. As a result, the pixels may include first to third blocking structures 98 and 100. 115, respectively.

In still other exemplary embodiments, the display device may include three additional blocking structures 185. These additional blocking structures 185 may include the same number of blocking patterns, and accordingly, the additional blocking structures 185 may have substantially the same heights. In this case, each of the additional blocking structures 185 may have a height substantially equal to or similar to the third height of the third blocking structure 115. Optionally, the additional blocking structures 185 may have different heights.

As illustrated in FIG. 8, each of the additional blocking structures 185 includes a first insulating layer pattern 190, a second insulating layer pattern 193, a third insulating layer pattern 194, a metal layer pattern 195, A fourth insulating layer pattern 198, a fifth insulating layer pattern 200, and a sixth insulating layer pattern 203 may be included. The first insulating layer pattern 185, the second insulating layer pattern 193, and the third insulating layer pattern 194 are substantially the same as the buffer layer 25, the gate insulating layer 30, and the interlayer insulating layer 45, respectively. Or similar materials. The metal layer pattern 195 of the additional blocking structure 185 may include materials that are substantially the same as or similar to the data lines 50 and 55. In addition, the fourth insulating layer pattern 198, the fifth insulating layer pattern 200, and the sixth insulating layer pattern 203 are each substantially the same or similar to the insulating layer 60, the pixel defining layer 80, and the spacer. Materials may be included.

According to still other exemplary embodiments, since the display device may include additional blocking structures 185 disposed between adjacent pixels, display structures are included during the masking process of forming the emission layers 85 It is possible to more effectively prevent the phenomenon that the substructures are damaged.

In the foregoing description, a display device and a method of manufacturing a display device according to exemplary embodiments of the present invention have been described with reference to the drawings, but the above-described embodiments are exemplary, and the technical description of the present invention described in the claims It may be modified, transformed, and changed by a person having ordinary knowledge in the relevant technical field without departing from the spirit.

The present invention may be applied to various electric and electronic devices including a display device, and thus durability and reliability of the electric and electronic devices may be improved. For example, display devices according to exemplary embodiments of the present invention include a computer, a notebook computer, a digital camera, a video camcorder, a mobile phone, a smart phone, a smart pad, a PMP (PMP), a PDA (PDA), an MP3 player, a navigation device, It can be applied to video phones, surveillance systems, tracking systems, motion detection systems, and image stabilization systems.

10: display device 20, 220: substrate
25, 225: buffer layer 30, 240: gate insulating layer
35, 275: first transistors 40, 280: second transistors
45, 290: interlayer insulating layer 50, 55, 295, 300: data line
60, 310: insulating layer 65, 335: first electrode
70, 340: protective member 75, 315: contact
80, 345: pixel defining layer 85, 365: light emitting layer
90, 370: second electrode 98, 100', 370: first blocking structure
100. 115', 380: second blocking structure 115, 390: third blocking structure
160: fourth blocking structure 140, 395: first organic layer
145, 400: first inorganic layer 150: second organic layer
155: second inorganic layer 185: additional blocking structure

Claims (16)

Substrate including display area and peripheral area:
Display structure disposed in the display area of the substrate:
An organic layer disposed on the display structure;
A metal layer disposed in a peripheral area of the substrate; And
A display device including a plurality of blocking structures disposed on the metal layer. The display device of claim 1, further comprising a protection member disposed in a peripheral area of the substrate and at least partially overlapping the metal layer. The display device of claim 2, wherein the display structure includes a first electrode, a light emitting layer, and a second electrode, and the protection member is electrically connected to the second electrode. The display device of claim 1, wherein the blocking structures directly contact the metal layer. The display device of claim 1, wherein the metal layer includes an outermost wiring. The display device of claim 1, further comprising a transistor disposed in the display area of the substrate, wherein the metal layer comprises the same material as the source electrode and the drain electrode of the transistor. The display device of claim 1, further comprising a transistor disposed in a display area of the substrate, wherein the metal layer is formed simultaneously with a source electrode and a drain electrode of the transistor. The display device of claim 1, wherein the organic layer is spaced apart from the blocking structures. The display device of claim 1, further comprising a plurality of inorganic layers disposed on the organic layer, wherein the organic layer is interposed between the inorganic layers. The display device of claim 9, wherein the inorganic layers are in contact with each other in a peripheral area of the substrate. The display device of claim 1, further comprising an additional metal layer disposed in a peripheral area of the substrate, wherein the additional metal layer is spaced apart from the metal layer. The display device of claim 11, wherein at least one of the additional metal layer and the metal layer includes an outermost wiring. The display device of claim 1, further comprising an insulating layer that at least partially exposes the substrate in a peripheral region of the substrate, wherein the metal layer is disposed on the insulating layer. The display device of claim 1, wherein the blocking structures have different heights. The display device of claim 12, wherein the blocking structures have the same heights. A substrate having a display area and a peripheral area;
A display structure disposed in the display area of the substrate;
An organic layer disposed on the display structure;
A metal layer disposed in a peripheral area of the substrate; And
A display device including a plurality of protrusions disposed on the metal layer.

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