KR102607592B1 - Display devices and methods of manufacturing display devices - Google Patents

Abstract

The display device includes display structures disposed in a display area of a substrate, a plurality of blocking structures disposed in a peripheral area of the substrate and having different heights, and at least one disposed on the display structures and the blocking structures. It may include an organic layer, and at least one inorganic layer disposed on the organic layer. It can prevent the organic layer from leaking into the surrounding area and block the propagation of damage such as cracks that may occur in the inorganic layer. Additionally, since display structures can be effectively protected during the masking process for forming the light emitting layers, durability and reliability of the display device can be improved.

Description

Display device and method of manufacturing the display device {DISPLAY DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES}

The present invention relates to a display device and a method of manufacturing the display device. More specifically, the present invention relates to a display device including a plurality of blocking structures and a method of manufacturing such a display device.

Typically, organic light-emitting devices used in flexible display devices are vulnerable to moisture, oxygen, etc., so organic layers and inorganic layers are alternately stacked to form an encapsulation film. However, in a display device equipped with a conventional organic light emitting device, the organic layers made from monomer are likely to leak to the surrounding area of the pixel, and in this case, the organic light emitting device is damaged due to infiltration of moisture from the outside. Problems occur that deteriorate and reduce the lifespan and reliability of the display device. In addition, damage such as cracks is likely to occur in the inorganic layers, and these cracks propagate into the interior of the display device through the organic layers and other inorganic layers, further reducing the lifespan and reliability of the display device. . Moreover, there is a problem in that the lower structures are easily damaged due to contact with the mask during the process of forming the organic layers.

One object of the present invention is to provide a display device including a plurality of blocking structures having different heights.

Another object of the present invention is to provide a method of manufacturing a display device including a plurality of blocking structures having different heights.

However, the purposes of the present invention are not limited to the above-described purposes, and may be expanded in various ways without departing from the spirit and scope of the present invention.

In order to achieve the above-described object of the present invention, a display device according to exemplary embodiments of the present invention includes a substrate including a display area and a peripheral area, display structures, a plurality of blocking structures, and at least one organic layer. , may include at least one inorganic layer, etc. The display structures may be disposed in a display area of the substrate. The plurality of blocking structures may have substantially different heights and may be disposed in a peripheral area of the substrate. The at least one organic layer may be disposed on the display structures and the blocking structures, and the at least one inorganic layer may be disposed on the at least one organic layer.

In example embodiments, the plurality of blocking structures may each include a plurality of blocking patterns. For example, the plurality of blocking structures may each include a metal layer pattern and at least one insulating layer pattern.

According to example embodiments, the display device may further include data lines, an insulating layer, and a protection member. The data lines may be disposed in a display area and a peripheral area of the substrate, and the insulating layer may cover the data lines. The protection member may be disposed on an outermost data line exposed by the insulating layer among the data lines and the insulating layer. Additionally, the display structures may each include a first electrode, a pixel defining layer, a spacer, a light emitting layer, and a second electrode. The first electrode may be disposed on the insulating layer, and the pixel defining layer may be disposed on the insulating layer to partially expose the first electrode. The spacer may be disposed on the pixel defining layer, and the light emitting layer may be disposed on the exposed first electrode. The second electrode may be disposed on the pixel defining layer, the spacer, and the light emitting layer.

In example embodiments, the plurality of blocking structures may each include a first blocking structure, a second blocking structure, and a third blocking structure. For example, the first blocking structure may have a first height, the second blocking structure may have a second height that is substantially greater than the first height, and the third blocking structure may have a second height that is substantially greater than the first height. It may have a more substantially larger third height. In this case, the first blocking structure may include a first metal layer pattern and a first insulating layer pattern, and the second blocking structure may include a second metal layer pattern, a second insulating layer pattern, and a third insulating layer pattern. You can. The third blocking structure may include a third metal layer pattern, a fourth insulating layer pattern, a fifth insulating layer pattern, and a sixth insulating layer pattern.

According to example embodiments, the first metal layer pattern may correspond to a portion of the protection member, and the second metal layer pattern may correspond to a portion of the outermost data line. The third metal layer pattern may include a material substantially the same as or similar to that of the data lines. The first insulating layer pattern, the second insulating layer pattern, and the fourth insulating layer pattern may each include a material that is substantially the same as or similar to an insulating layer in the display area. The second insulating layer pattern and the fifth insulating layer pattern may each include a material substantially the same as or similar to that of the pixel defining layer. The sixth insulating layer pattern may include a material that is substantially the same as or similar to that of the spacer.

In other example embodiments, the display device may further include a fourth blocking structure adjacent to the third blocking structure in a peripheral area. For example, the fourth blocking structure may have a height substantially the same as or similar to the third blocking structure. The fourth blocking structure may include a fourth metal layer pattern, a seventh insulating layer pattern, an eighth insulating layer pattern, and a ninth insulating layer pattern. The fourth metal layer pattern may include the same or similar material as the data lines, and the seventh insulating layer pattern may include the same or similar material as the insulating layer. The eighth insulating layer pattern may include the same or similar material as the pixel defining layer, and the ninth insulating layer pattern may include the same or similar material as the spacer.

In still other example embodiments, the display device may further include at least one additional blocking structure disposed between adjacent pixels. For example, the at least one additional blocking structure may have substantially the same or similar height as the third blocking structure. The at least one additional blocking structure may include a metal layer pattern and six insulating layer patterns.

In still other example embodiments, the plurality of blocking structures may include a first blocking structure disposed on the outermost data line and a second blocking structure adjacent to the first blocking structure. In this case, the first blocking structure may include a metal layer pattern and two insulating layer patterns that are part of the outermost data line, and the second blocking structure may include a metal layer pattern and three insulating layer patterns. .

According to still other example embodiments, the plurality of blocking structures may include a first blocking structure disposed on the protection member and a second blocking structure disposed on the outermost data line. Here, the first blocking structure may include a metal layer pattern and one insulating layer pattern that are part of the protective member, and the second blocking structure may include a metal layer pattern and two insulating layer patterns that are part of the outermost data line. It can be included.

According to still other example embodiments, the display device may include at least one additional blocking structure disposed between adjacent pixels.

In order to achieve another object of the present invention described above, in a method of manufacturing a display device according to exemplary embodiments of the present invention, a substrate having a display area and a peripheral area is provided, and then a plurality of displays are displayed in the display area. Structures can be formed. A plurality of blocking structures having different heights may be formed in the peripheral area. At least one organic layer and at least one inorganic layer may be formed substantially alternately on the display structures and the blocking structures.

In example embodiments, transistors, interlayer insulating layers, and data lines may be formed on the substrate. An insulating layer covering the transistors and the data lines may be formed on the interlayer insulating layer. A protection member may be formed on the insulating layer and the outermost data line among the data lines in the peripheral area.

In the process of forming the blocking structures according to example embodiments, a metal layer pattern adjacent to the outermost data line may be formed. A first insulating layer pattern may be formed on a portion of the outermost data line. A second insulating layer pattern may be formed on the metal layer pattern. For example, the data line and the metal layer pattern may be formed simultaneously. Additionally, the insulating layer and the first and second insulating layer patterns may be formed simultaneously.

In the process of forming the display structures according to example embodiments, after forming first electrodes on the insulating layer, a pixel defining layer and a spacer are formed on the insulating layer to partially expose the first electrodes. can be formed. Light-emitting layers may be formed on the exposed first electrodes, and then second electrodes may be formed on the light-emitting layers, the pixel defining layer, and the spacer.

In the process of forming the blocking structures according to example embodiments, a third insulating layer pattern may be formed on the protective member, and a fourth insulating layer pattern may be formed on the first insulating layer pattern. there is. A fifth insulating layer pattern may be formed on the second insulating layer pattern, and a sixth insulating layer pattern may be formed on the fifth insulating layer pattern. For example, the third insulating layer pattern, the fourth insulating layer pattern, and the fifth insulating layer pattern may be formed simultaneously with the pixel defining layer. Additionally, the sixth insulating layer pattern may be formed simultaneously with the spacer.

Display devices according to exemplary embodiments of the present invention may include a plurality of blocking structures that may have different heights, thereby effectively preventing leakage of organic layers obtained by processing monomers from the display area to the surrounding area. can do. Additionally, the durability and reliability of the display device can be improved by blocking the propagation of damage such as cracks that may occur in the inorganic layers. Moreover, since lower structures located in the display area can be effectively protected during the masking process for forming the light emitting layers, the durability and reliability of the display device can be further improved.

However, the effects of the present invention are not limited to the effects described above, and may be expanded in various ways without departing from the spirit and scope of the present invention.

1 is a cross-sectional view showing a display device according to exemplary embodiments of the present invention.
Figure 2 is a cross-sectional view showing a display device according to another exemplary embodiment of the present invention.
3 is a cross-sectional view showing a display device according to still other exemplary embodiments of the present invention.
Figure 4 is a cross-sectional view showing a display device according to still other exemplary embodiments of the present invention.
5 to 7 are cross-sectional views for explaining a method of manufacturing a display device according to example embodiments of the present invention.
8 is a cross-sectional view showing a display device according to still other exemplary embodiments of the present invention.

In the exemplary embodiments of the invention described herein, specific structural and functional descriptions are provided solely for the purpose of illustrating exemplary embodiments of the invention, and the invention may be implemented in various forms. and is not to be interpreted as being limited to the embodiments described in this specification.

The present invention may include various modifications or changes and may take various forms, and specific embodiments are illustrated in the drawings and described in detail herein. However, this is not intended to limit the present invention to specific disclosed forms, and should be understood to include all variations, changes, equivalents, substitutions, etc. included within the spirit and technical scope of the present invention.

Terms such as first, second, third, fourth, fifth, and sixth may be used to describe various components, but the components are not limited by the terms. These terms may be used for the purpose of distinguishing one component from another. For example, the first component may be named as any one of the second to sixth components without departing from the scope of the present invention, and similarly, the second to sixth components may also be named as different components. It may be named as any one of them.

When a component is referred to as being "connected," "in contact," or "connected" to another component, it may be directly connected, in contact, or connected to that other component, but there may also be other components in between. It must be understood that there is. Other expressions that describe relationships between components, such as “between” and “adjacent to,” are interpreted similarly.

The terms used in this application are only used to describe exemplary embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, terms such as “comprise,” “comprise,” “contain,” or “have” are intended to designate the presence of disclosed features, numbers, steps, operations, components, parts, or combinations thereof. , it should be understood that it does not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the technical field to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless clearly defined in the present application, should not be interpreted as having an ideal or excessively formal meaning. .

Hereinafter, display devices according to exemplary embodiments of the present invention will be described in more detail with reference to the attached drawings. In the drawings, identical or similar reference numerals are used for substantially identical or similar components.

1 is a cross-sectional view illustrating a display device according to example embodiments of the present invention. FIG. 1 is a diagram illustrating, for example, a cross section of a pixel located on the outside of the display device.

Referring to FIG. 1 , a display device 10 according to example embodiments may include a substrate 20, peripheral circuitry, display structures, and a plurality of blocking structures. .

In example embodiments, the display structures may each include a first electrode 65, a light emitting layer 85, and a second electrode 90. The plurality of blocking structures may have substantially different heights. The first to third blocking structures 89, 100, and 115 may each include a plurality of blocking patterns. The structures of these first to third blocking structures 89, 100, and 115 will be described later. The display device 10 illustrated in FIG. 1 includes a first blocking structure 98 having a first height, a second blocking structure 100 having a second height substantially greater than the first height, and the third height. It may include a third blocking structure 115 having a third height that is substantially larger. That is, the display device 10 may include a plurality of blocking structures whose heights substantially increase toward the outer portion of the pixel.

The display device 10 may include a display area (I) (or active area) and a peripheral area (II). The display structures may be located in the display area I, and peripheral circuits and the first to third blocking structures 98, 100, and 115 may be located in the peripheral area II. In example embodiments, the peripheral area I of the display device 10 includes a peripheral circuit area where the peripheral circuit is located and a dead space corresponding to the outermost portion of a pixel of the display device 10. It can be divided into areas. In this case, the plurality of blocking structures may be disposed in the peripheral circuit area and dead space area. For example, the first blocking structure 98 and the second blocking structure 100 may be located in the peripheral circuit area, and the third blocking structure 115 may be located in the dead space area.

In the display device 10 illustrated in FIG. 1, the substrate 20 may be made of a flexible transparent resin. For example, the substrate 20 is made of polymethylmethacrylate-based resin, polyimide-based resin, acryl-based resin, polyacrylate-based resin, and polycarbonate-based resin. It may include resin, polyether-based resin, sulfonic acid-based resin, polyethylene terephthalate-based resin, etc. According to other exemplary embodiments, the substrate 20 may be made of a transparent ceramic substrate such as a glass substrate, a quartz substrate, or a translucent alumina substrate.

A buffer layer 25 may be disposed on the substrate 20. The buffer layer 25 may enable upper structures including the display structures and the plurality of blocking structures to be easily formed on the substrate 20 . Additionally, the buffer layer 25 may prevent metal atoms or impurities from diffusing from wires, patterns, and/or electrodes containing metal. Moreover, the buffer layer 25 controls the heat transfer rate during the heat treatment process for forming the active patterns of the first transistors 35 and the second transistors 40, so that the first and second transistors 35 and 40 ) can be provided with substantially uniform active patterns. Here, the first transistors 35 may correspond to switching transistors of the display device 10, and the second transistors 40 may correspond to driving transistors of the display device 10. Meanwhile, the buffer layer 25 may serve to substantially improve the surface flatness of the substrate 20.

In example embodiments, the buffer layer 25 may have a substantially smaller area than the substrate 20 . For example, the buffer layer 20 may expose a portion adjacent to an edge of the substrate 20. That is, a step may be created between the substrate 20 and the buffer layer 25. The buffer layer 25 may be made of a silicone compound, transparent resin, etc. For example, the buffer layer 25 is made of silicon oxide, silicon nitride, silicon oxycarbide, silicon carbonitride, polyacrylate resin, polymethacrylate resin, olefin resin, and/or polyvinyl resin. It may include at least one buffer film containing. According to example embodiments, the buffer layer 25 may include two buffer films made of different silicon compounds. Alternatively, the buffer layer 25 may have a structure in which at least one buffer film containing a silicon compound and at least one buffer film containing a transparent resin are substantially alternately stacked. However, the structure of the buffer layer 25 may vary depending on the configuration, dimensions, purpose, etc. of the display device 10.

A gate insulating layer 30 may be disposed on the buffer layer 25. In example embodiments, the gate insulating layer 30 may have an area that is substantially the same as or similar to that of the buffer layer 25 . The gate insulating layer 30 may cover the active patterns of the first and second transistors 35 and 40 located on the buffer layer 25 . In this case, the active patterns may be made of polysilicon, oxide semiconductor, etc. The gate insulating layer 30 may be made of a silicon compound such as silicon oxide or silicon carbonate. Optionally, the gate insulating layer 30 may be made of a metal oxide such as hafnium oxide, aluminum oxide, zirconium oxide, titanium oxide, tantalum oxide, etc.

Gate electrodes of the first and second transistors 35 and 40 may be located on portions of the gate insulating layer 30 that covers the active patterns. Each gate electrode may be made of metal, alloy, conductive metal oxide, transparent conductive material, etc. Although not shown, wirings such as gate lines electrically connected to the gate electrodes may be disposed on the gate insulating layer 30.

An interlayer insulating layer 45 covering the gate electrodes of the first and second transistors 35 and 40 may be disposed on the gate insulating layer 30 . The interlayer insulating layer 45 may serve to separate the gate electrodes of the first and second transistors 35 and 40 from the upper wirings and/or electrodes. The interlayer insulating layer 45 may include a silicone compound, transparent resin, etc. For example, the interlayer insulating layer 45 is made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbide, polyacrylate resin, polymethacrylate resin, olefin resin, and polyvinyl resin. It may include etc.

Source electrodes and drain electrodes of the first and second transistors 35 and 40 may be disposed on the interlayer insulating layer 45. Additionally, data lines 50 and 55 electrically connected to the drain electrodes of the first and second transistors 35 and 40 may be located on the interlayer insulating layer 45. The source electrodes and drain electrodes of the first and second transistors 35 and 40 may each include metal, alloy, conductive metal oxide, transparent conductive material, etc. The source electrodes and drain electrodes may respectively penetrate the interlayer insulating layer 45 and be connected to the active patterns.

As illustrated in FIG. 1 , an insulating layer 60 may be disposed to cover the first transistors 35 and data lines 50 in the display area I. Additionally, the insulating layer 60 may extend to the peripheral area II to cover the second transistors 40 and partially cover the outermost data line 55. The insulating layer 60 may function to insulate the first transistors 35 from the first electrodes 35 of the display structures in the display area I.

The insulating layer 60 may be made of an organic material. For example, the insulating layer 60 may be made of polyimide-based resin, photoresist, acrylic-based resin, polyamide-based resin, siloxane-based resin, etc. It can be included. These can be used alone or in combination with each other. The insulating layer 60 may have a single-layer structure or a multi-layer structure containing the above-mentioned resins. In other exemplary embodiments, the insulating layer 60 may be made of an inorganic material such as a silicon compound or metal oxide. For example, the insulating layer 50 is made of silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, aluminum oxide, titanium oxide, tantalum oxide, magnesium oxide, zinc oxide, hafnium oxide, zirconium oxide, and titanium. It may include oxides, etc.

Although not illustrated in FIG. 1, the peripheral circuit covered by the insulating layer 60 includes a gate driver, a data driver, and a timing device in addition to the data lines including the second transistors 40 and the outermost data line 55. It may include a controller, etc.

The first electrodes 65 may be disposed on the insulating layer 60 in the display area (I). The second electrodes 65 may be electrically connected to the drain electrodes of the first transistors 35 through contacts 75 formed through the insulating layer 60, respectively. In the display area I, adjacent first electrodes 65 may be spaced apart from each other at a predetermined distance. The first electrodes 65 may each include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, each of the first electrodes 65 may be formed of aluminum, aluminum-containing alloy, aluminum nitride, silver, silver-containing alloy, tungsten, tungsten nitride, copper, copper-containing alloy, nickel, chromium, Chromium nitride, molybdenum, alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, indium tin oxide, indium zinc oxide, zinc tin oxide, zinc oxide, tin oxide, indium It may include oxide, gallium oxide, etc. These can be used alone or in combination with each other.

In the display area I of the display device 10 illustrated in FIG. 1, a pixel defining film 80 may be disposed on the insulating layer 60. The pixel defining layer 80 may include openings that expose the first electrodes 65, respectively. The light emitting areas of the display device 10 may be limited by the openings of the pixel defining layer 80. The pixel defining layer 80 may extend onto a portion of the insulating layer 60 covering the data line 50 located in the display area (I). The pixel defining layer 80 may include an organic material. For example, the pixel defining layer 80 may contain polyimide resin, photoresist, polyacrylic resin, polyamide resin, acrylic resin, etc. Although not shown, a spacer for maintaining a cell gap of the pixel may be disposed on the pixel defining layer 80 in the display area I. In example embodiments, the spacer may contain substantially the same material as the pixel defining layer 80. In this case, the pixel defining layer 80 and the spacer can be obtained through an etching process using a halftone mask, halftone slit mask, etc.

In the peripheral area II of the display device 10, a protection member 70 may be disposed on the top and sides of the insulating layer 60. The protection member 70 may serve to protect the peripheral circuit located in the peripheral area II from static electricity, shock, etc. In example embodiments, the protection member 70 may extend from the side of the pixel defining layer 80 onto the outermost data line 55 located in the peripheral area II. For example, the protection member 70 may contact the side of the pixel defining layer 80 and extend onto the outermost data line 55 while substantially surrounding the side of the insulating layer 60. .

The protective member 70 may be made of substantially the same material as the first electrodes 65 . For example, the first electrodes 65 of the protection member 70 may include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. In other exemplary embodiments, the protective member 70 may also have a single-layer structure or a multi-layer structure including the above-described metal, alloy, metal nitride, conductive metal oxide, and/or transparent conductive material. As will be described later, a portion of the protection member 70 may function as the first metal layer pattern of the first blocking structure 98. For example, the first blocking structure 98 may include a first metal layer pattern and a first insulating layer pattern 95 that are part of the protective member 70 .

Light emitting layers 85 may be disposed on the first electrodes 65 exposed by the openings of the pixel defining layer 80, respectively. The light-emitting layers 85 may have a multi-layer structure including an organic light-emitting layer (EL), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL). The organic light-emitting layers of the light-emitting layers 85 may include light-emitting materials that can generate light of different colors, such as red light, green light, and blue light, depending on the type of pixels of the display device 10. In other exemplary embodiments, the organic light-emitting layer of each light-emitting layer 85 may emit white light as a whole by stacking a plurality of light-emitting materials capable of generating different color lights, such as red light, green light, and blue light.

A second electrode 90 may be disposed on the light emitting layers 85, the pixel defining layer 85, and the spacer. The second electrode 90 may extend onto the protection member 70 in the peripheral area (II). That is, the second electrode 90 may partially overlap the protection member 70 in the peripheral area II of the display device 10 . The second electrode 90 may correspond to a common electrode shared by adjacent pixels. The second electrode 90 may be made of metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc.

As illustrated in FIG. 1 , first to third blocking structures 98 , 100 , and 115 each having a plurality of blocking patterns may be disposed in the peripheral area II of the display device 10 .

In example embodiments, the first blocking structure 98 having the first height may be located on the outermost data line 55 . The first blocking structure 98 may include the first metal layer pattern and the first insulating layer pattern 95. The first blocking structure 98 having the first metal layer pattern and the first insulating layer pattern 95 is provided in the peripheral area ( II), the leakage phenomenon can be prevented primarily. Here, the first metal layer pattern may correspond to a part of the protection member 70, and the first insulating layer pattern 95 may be disposed on the first metal layer pattern. The first metal layer pattern allows the first insulating layer pattern 95 to be easily formed. In the display device shown in FIG. 1, the first organic layer 140 is illustrated as being spaced apart from the first blocking structure 98, but the first organic layer 140 is in contact with the first blocking structure 98 and forms a peripheral area. (II) Leakage can be prevented. That is, the first blocking structure 98 can sufficiently block leakage of the first organic layer 140 even if the thickness of the first organic layer 140 increases.

The first blocking structure 98 may have a first height that is substantially higher than the height of the insulating layer 60 in the display area I by the thickness of the outermost data line 55 and the thickness of the protection member 70. . In other example embodiments, when the display device 10 is not provided with the protection member 70, the first metal layer pattern of the first blocking structure 98 is located on a portion of the outermost data line 55. This may apply. In this case, the first height of the first blocking structure 98 may be substantially greater than the insulating layer 60 by the thickness of the outermost data line 55 . The first insulating layer pattern 95 may include a material that is substantially the same as or similar to that of the pixel defining layer 140 in the display area (I). For example, the first insulating layer pattern 95 may include polyimide resin, photoresist, acrylic resin, polyamide resin, siloxane resin, etc. These can be used alone or in combination with each other.

The second blocking structure 100 may be disposed adjacent to the first blocking structure 98 . The second blocking structure 100 may include a second metal layer pattern 58, a second insulating layer pattern 105, and a third insulating layer pattern 110. The second blocking structure 100 may secondarily prevent leakage of the first organic layer 140 and/or the second organic layer 150 into the peripheral area (II). For example, when the second organic layer 150 exceeds the first blocking structure 98, the second blocking structure 100 may block leakage of the second organic layer 150. The second thickness of the second blocking structure 100 may be substantially higher than the first thickness of the first blocking structure 98 by the thickness of the third insulating layer pattern 110 .

In example embodiments, the second metal layer pattern 58 may correspond to a side of the outermost data line 55 . The second insulating layer pattern 105 may be disposed on the interlayer insulating layer 45 while covering the second metal layer pattern 58 . For example, one side of the outermost data line 55 is covered by the second insulating layer pattern 105, the central part of the outermost data line 55 is covered by the protection member 70, and the central part of the outermost data line 55 is covered by the protective member 70. The other side of the outer data line 55 may be covered by the insulating layer 60. Here, the protection member 70 may extend to a portion of the side and top surface of the second insulating layer pattern 105 . Accordingly, one side of the protection member 70 may be interposed between the second insulating layer pattern 105 and the third insulating layer pattern 110. The second metal layer pattern 58 may facilitate the formation of the second insulating layer pattern 105. The second insulating layer pattern 105 may include a material that is substantially the same as or similar to the insulating layer 60 in the display area (I). In this case, the second insulating layer pattern 105 can be obtained through the same forming process as the insulating layer 60. For example, the second insulating layer pattern 105 may include polyimide resin, photoresist, acrylic resin, polyamide resin, siloxane resin, etc. These can be used alone or in combination with each other. Alternatively, the second insulating layer pattern 105 may be made of an inorganic material such as a silicon compound or metal oxide. The third insulating layer pattern 110 may include a material that is substantially the same as or similar to that of the pixel defining layer 80 in the display area (I). For example, the third insulating layer pattern 110 may be made of polyimide resin, photoresist, acrylic resin, polyamide resin, siloxane resin, etc. These can be used alone or in combination with each other. Here, the third insulating layer pattern 110 and the pixel defining layer 80 can be obtained through the same process.

In the display device 10 illustrated in FIG. 1 , the third blocking structure 115 may be located adjacent to the second blocking structure. In example embodiments, the first and second blocking structures 98 and 100 may be disposed in the peripheral circuit area of the peripheral area I, and the third blocking structure 115 may be located in the dead space area. can do. The third blocking structure 115 is a second blocking structure 100 due to the arrangement of a mask on the pixel defining film 80 and/or the spacer to form the light emitting layers 85 of the display area I. Damage to pixel lower structures including the definition layer 80 can be prevented. In addition, the third blocking structure 115 prevents damage, such as cracks, that may occur in the first inorganic layer 140 and/or the second inorganic layer 150 from the peripheral area II from the display area I. ) can be prevented from spreading. Moreover, the third blocking structure 115 ultimately blocks the second organic layer 150 from leaking into the peripheral area II, while allowing the display device 10 to form additional organic layers and inorganic layers (not shown). When included, leakage of these additional organic layers into the surrounding area (II) can be prevented.

In exemplary embodiments, the third blocking structure 115 includes a third metal layer pattern 120, a fourth insulating layer pattern 125, a fifth insulating layer pattern 130, and a sixth insulating layer pattern 135. may include. The third height of the third blocking structure 115 may be substantially greater than the second height of the second blocking structure 100 by the height of the sixth insulating layer pattern 120 . Accordingly, the display device 10 may include first to third blocking structures 98, 110, and 115 having first to third heights that increase outward.

The third metal layer pattern 120 may be made of substantially the same or similar material as the data lines 50 and 55. The third metal layer pattern 120 may facilitate the formation of the fourth insulating layer pattern 125. In example embodiments, the third metal layer pattern 120 may include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, the third metal layer pattern 120 may be formed of aluminum, aluminum-containing alloy, aluminum nitride, silver, silver-containing alloy, tungsten, tungsten nitride, copper, copper-containing alloy, nickel, chromium, chromium nitride. , molybdenum, alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium. It may be made of zinc oxide, etc. These can be used alone or in combination with each other. The third metal layer pattern 120 may be obtained through the same process as the data lines 50 and 55. That is, the first metal layer pattern, the second metal layer pattern 58, and the third metal layer pattern 120 may be formed substantially at the same time.

The fourth insulating layer pattern 125 of the third blocking structure 115 may be made of a material that is substantially the same as or similar to the insulating layer 60 in the display area (I). That is, the fourth insulating layer pattern 125 may include substantially the same material as the first insulating layer pattern 95 and the second insulating layer pattern 105. Accordingly, the insulating layer 60, the first insulating layer pattern 95, the second insulating layer pattern 105, and the fourth insulating layer pattern 125 can be obtained through the same process. The fifth insulating layer pattern 130 may include a material that is substantially the same as or similar to that of the pixel defining layer 80 in the display area (I). For example, the third insulating layer pattern 110, the fifth insulating layer pattern 130, and the pixel defining layer 80 can be obtained through the same process. The sixth insulating layer pattern 135 may be made of a material that is substantially the same as or similar to the spacer in the display area (I). In exemplary embodiments, the third insulating layer pattern 120, the fifth insulating layer pattern 120, and the sixth insulating layer pattern 135 are formed on the pixel defining layer 80 and the transistor in the display area (I). Can be obtained in the process of forming.

As described above, the display device 10 according to example embodiments includes a first blocking structure 98 including two blocking patterns, a third blocking structure 100 including three blocking patterns, and four blocking structures. A third blocking structure 115 including blocking patterns may be provided. That is, since the number and type of blocking patterns of the first to third blocking structures 98, 100, and 110 may be different, the first to third blocking structures 98, 100, and 110 may each have different blocking patterns. It may have 1 to 3 heights.

Referring again to FIG. 1, a first organic layer 140 is disposed to cover the display structures in the display area (I) and the first to third blocking structures (98, 100, and 110) in the peripheral area (II). It can be. The first organic layer 140 can improve the flatness of the display device 10, and the display area I can protect the display structures. Additionally, the first organic layer 140 may prevent impurities from diffusing from lower structures. For example, the first organic layer 140 may include polyimide-based resin, polyacrylic resin, polyamide-based resin, etc.

A first inorganic layer 145 may be disposed on the first organic layer 140. The first inorganic layer 140 can prevent the first organic layer 140 and the display structures from being deteriorated due to penetration of moisture, oxygen, etc. Additionally, the first inorganic layer 145 may also perform a function of protecting the first organic layer 140 and the display structures from external shock. The first inorganic layer 145 may be composed of a metal compound. For example, the first inorganic layer 145 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and aluminum. It can be done as follows.

The second organic layer 150 may be disposed on the first inorganic layer 145. The second organic layer 150 may perform substantially the same or similar functions as the first organic layer 140, and may be made of a material substantially the same or similar to the first organic layer 140. A second inorganic layer 155 may be located on the second organic layer 150. The second inorganic layer 155 may perform substantially the same or similar role as the first inorganic layer 145, and may be made of a material substantially the same as or similar to the first inorganic layer 145.

According to exemplary embodiments, since the display device 10 may be provided with the first to third blocking structures 98, 100, and 115 having the above-described configurations, the first organic layer obtained by processing monomers Leakage of the layer 140 and/or the second organic layer 150 from the display area I to the surrounding area II can be effectively prevented. Additionally, the durability and reliability of the display device 10 can be improved by blocking the propagation of damage such as cracks that may occur in the first inorganic layer 145 and/or the second inorganic layer 155. Moreover, during the masking process to form the light emitting layers 85, lower structures located in the display area I can be effectively protected, thereby improving the durability and reliability of the display device 10.

In other example embodiments, the display device 10 may include at least one additional organic layer and at least one additional inorganic layer depending on its purpose, dimensions, and components. Even when a plurality of additional organic layers are disposed by the second blocking structure 100 and/or the third blocking structure 155, leakage of the additional organic layers toward the surrounding area can be effectively prevented.

Figure 2 is a cross-sectional view showing a display device according to another exemplary embodiment of the present invention. In FIG. 2, the same reference numerals are used for components described with reference to FIG. 1, and detailed descriptions of these components are omitted. The display device illustrated in FIG. 2 is substantially the same as or similar to the display device 10 described with reference to FIG. 1, except for the fourth blocking structure 160 that may be disposed adjacent to the third blocking structure 115. It can have a configuration.

Referring to FIG. 2, the fourth blocking structure 160 may have a fourth height that is substantially the same as or similar to the third blocking structure 115, and may have a blocking pattern that is substantially the same or similar to the third blocking structure 115. may include. That is, in addition to the first and second blocking structures 98 and 100 that may be disposed in the peripheral area II, the display device includes two blocking structures 115 adjacent to the outer portion and having substantially the same or similar configuration. , 160) can be provided.

The fourth blocking structure 160 may include a fourth metal layer pattern 165, a seventh insulating layer pattern 170, an eighth insulating layer pattern 175, and a ninth insulating layer pattern 190. The fourth metal layer pattern 165 may be made of a material that is substantially the same as or similar to the third metal layer pattern 120. Additionally, the seventh to ninth insulating layer patterns 170, 175, and 180 may be made of materials that are substantially the same as or similar to the fourth to sixth insulating layer patterns 120, 125, and 130, respectively.

Since the display device may additionally include a fourth blocking structure 160, leakage of the first organic layer 140, the second organic layer 150 and/or additional organic layers into the surrounding area II can be effectively prevented. there is. In addition, it is possible to block the propagation of damage such as cracks that may occur in the first inorganic layer 145, the second inorganic layer 155, and/or additional inorganic layers, and the process for forming the light-emitting layers 85 Since lower structures located in the display area (I) can be efficiently protected, the durability and reliability of the display device can be further improved.

FIG. 3 is a cross-sectional view illustrating a display device according to still other exemplary embodiments of the present invention. In the display device illustrated in FIG. 3, the first blocking structure 100' and the second blocking structure 115' are the second blocking structure 100 and the third blocking structure 115 described with reference to FIG. 1, respectively. It may have a substantially identical or similar configuration. That is, the second blocking structure 100 and the third blocking structure 115 of FIG. 1 may substantially correspond to the first blocking structure 100' and the second blocking structure 115' of FIG. 3. The display device illustrated in FIG. 3 has a configuration that is substantially the same as or similar to the display device 10 described with reference to FIG. 1, except for the first blocking structure 98. You can have That is, in FIG. 3, the blocking structure may not be disposed on the protection member 75.

In still other example embodiments, the first blocking structure 100' may include a first metal layer pattern 58', a first insulating layer pattern 105', and a second insulating layer pattern 110'. You can. In this case, the first metal layer pattern 58', the first insulating layer pattern 105', and the second insulating layer pattern 110' are respectively the second metal layer pattern 58 and the second insulating layer pattern 110' described with reference to FIG. 1. It may be substantially the same as or similar to the layer pattern 105 and the third insulating layer pattern 110. The second blocking structure 115' may be provided with a second metal layer pattern 120', a third insulating layer pattern 125', a fourth insulating layer pattern 130', and a fifth insulating layer pattern 135'. You can. Here, the second metal layer pattern 120', third insulating layer pattern 125', fourth insulating layer pattern 130', and fifth insulating layer pattern 135' are respectively the third insulating layer pattern 135' described with reference to FIG. 1. It may be substantially the same as or similar to the metal layer pattern 120, the fourth insulating layer pattern 125, the fifth insulating layer pattern 130, and the sixth insulating layer pattern 135.

According to another embodiment, the display device may be provided with two blocking structures 100' and 115' having different heights, so that if additional organic layers are not excessively disposed, the display device may be provided with two blocking structures 100' and 115' having different heights. Leakage of the first organic layer 140 and/or the second organic layer 150 may be blocked. Additionally, the second blocking structure 115' can prevent lower structures from being damaged during the process of forming the light emitting layers 85. Furthermore, it is possible to prevent damage such as cracks in the first inorganic layer 145 and/or the second inorganic layer 155 from propagating to the display area I. Meanwhile, since the display device illustrated in FIG. 3 may include two blocking structures 100' and 115', the display device may have relatively small dimensions.

Figure 4 is a cross-sectional view showing a display device according to still other exemplary embodiments of the present invention. In FIG. 4, the same reference numerals are used for components described with reference to FIG. 1, and detailed descriptions of these components are omitted. The display device illustrated in FIG. 4 has a configuration substantially the same as or similar to the display device 10 described with reference to FIG. 1, except for the third blocking structure 115. You can have it.

The display device illustrated in FIG. 4 may include a first blocking structure 98 and a second blocking structure 100. The first blocking structure 98 may be disposed on the protection member 70, and the second blocking structure 100 may be located on the outermost data line 55 partially exposed by the insulating layer 60. can do.

In still other example embodiments, the blocking structures 98 and 100 of the display device may be located adjacent to the display area I, thereby relatively reducing the size of the display device. Unless the display device has many additional organic layers, the first and second blocking structures 98, 100 are located on the first organic layer 140 and/or the second organic layer 150 facing toward the peripheral area II. Leakage can be sufficiently prevented. Additionally, it is possible to prevent damage such as cracks in the first inorganic layer 145 and/or the second inorganic layer 155 from propagating to the display area I.

5 to 7 are cross-sectional views for explaining a method of manufacturing a display device according to example embodiments of the present invention. 5 to 7 illustrate a method of manufacturing a display device having a configuration substantially the same or similar to that of the display device described with reference to FIG. 1, but those skilled in the art will understand that a process such as a patterning process It will be understood that any one of the display devices described with reference to FIGS. 2 to 4 can be manufactured through obvious modifications.

Referring to FIG. 5 , a substrate 220 including a display area (III) and a peripheral area (IV) may be provided. In this case, the peripheral area of the substrate 220 may include a peripheral circuit area where peripheral circuits can be formed and a dead space area corresponding to the outermost portion of a pixel of the display device. The substrate 220 may be formed using transparent resin. Optionally, the substrate 220 may be comprised of a transparent ceramic substrate.

A buffer layer 225 may be formed on the substrate 220. The buffer layer 225 may extend from the display area (I) of the device 220 to the peripheral area (II). The buffer layer 225 may be formed using a silicone compound, transparent resin, etc. For example, the buffer layer 225 is formed using silicon oxide, silicon nitride, silicon oxycarbide, silicon carbonitride, polyacrylate-based resin, polymethacrylate-based resin, olefin-based resin, and/or polyvinyl-based resin. It can be. Additionally, the buffer layer 225 may be formed using a spin coating process, a printing process, a heat treatment process, a chemical vapor deposition process, etc.

In example embodiments, the buffer layer 225 may be formed by depositing different silicon compounds on the substrate 220 to form a plurality of buffer films to obtain the buffer layer 225, or at least one buffer film comprising a silicon compound. and at least one buffer film containing a transparent resin may be alternately stacked to obtain the buffer layer 225. According to other exemplary embodiments, the buffer layer 225 may not be formed on the substrate 220 depending on the constituent material, surface condition, etc. of the substrate 220.

First active patterns 230 and second active patterns 235 may be formed on the buffer layer 225. The first active patterns 230 may be formed in the display area (III), and the second active patterns 235 may be formed in the peripheral area (IV). In exemplary embodiments, after forming a semiconductor layer (not shown) on the buffer layer 225, the semiconductor layer is patterned to form preliminary first active patterns (not shown) in the display area III. and preliminary second active patterns (not shown) may be formed in the peripheral area IV. The first and second active patterns 230 and 235 may be obtained by performing a heat treatment process, a laser irradiation process, a heat treatment process using a catalyst, etc. on these preliminary first and third active patterns. In this case, the semiconductor layer may be formed using amorphous silicon, amorphous silicon containing impurities, etc. Additionally, the semiconductor layer may be formed using a chemical vapor deposition process, a plasma enhanced chemical vapor deposition process, a low pressure chemical vapor deposition process, a sputtering process, etc. The first and second active patterns 230 and 235 may be made of polysilicon, polysilicon containing impurities, partially crystallized silicon, silicon containing microcrystals, or an oxide semiconductor, respectively.

Referring again to FIG. 5 , a gate insulating layer 240 is formed on the buffer layer 225 to cover the first and second active patterns 230 and 235 . The gate insulating layer 240 may be formed substantially uniformly on the buffer layer 225 and may have an area substantially the same as or similar to that of the buffer layer 225 . The gate insulating layer 240 may be formed using a silicon compound such as silicon oxide or silicon carbonate. Additionally, the gate insulating layer 240 may be obtained using a chemical vapor deposition process, spin coating process, plasma enhanced chemical vapor deposition process, sputtering process, vacuum deposition process, high density plasma chemical vapor deposition process, or printing process. In other exemplary embodiments, the gate insulating layer 240 is formed by forming a metal oxide such as hafnium oxide, aluminum oxide, zirconium oxide, titanium oxide, tantalum oxide, etc. on the buffer layer 225 by a chemical vapor deposition process, a spin coating process, It can be obtained by deposition using a plasma enhanced chemical vapor deposition process, sputtering process, vacuum deposition process, high density plasma chemical vapor deposition process, etc.

Referring to FIG. 6, the gate insulating layer 240 and the buffer layer 225 may be partially removed to expose a portion of the substrate 220. For example, as the gate insulating layer 240 and the buffer layer 225 are partially removed, a portion adjacent to an edge portion of the substrate 220 may be exposed. Accordingly, a step may be created between the substrate 220, the gate insulating layer 240, and the buffer layer 225.

First gate electrodes 245 and second gate electrodes 250 may be formed on the gate insulating layer 240. The first and second gate electrodes 245 and 250 may be formed using metal, alloy, conductive metal oxide, transparent conductive material, etc. Additionally, the first and second gate electrodes 245 and 250 may be obtained using a sputtering process, chemical vapor deposition process, pulse laser deposition process, vacuum deposition process, atomic layer deposition process, etc. The first gate electrodes 245 may be formed on portions of the gate insulating layer 240 of the display area III where the first active patterns 230 (see FIG. 5) are located below. Additionally, the second gate electrodes 250 may be formed on portions of the gate insulating layer 240 in the peripheral region IV where the second active patterns 235 (see FIG. 5) are disposed below. .

Although not shown, gate lines electrically connected to the first and second gate electrodes 245 and 250 may be formed on the gate insulating layer 240 in the display area III and the peripheral area IV. Additionally, by injecting impurities into the first and second active patterns 230 and 235 using the first and second gate electrodes 245 and 250 as masks, the first and second active patterns 230 , 235), source regions and drain regions may be formed, respectively.

The interlayer insulating layer 290 covers the first and second gate electrodes 245 and 250 and may be formed on the gate insulating layer 240. The interlayer insulating layer 290 may be formed using a silicone compound, transparent resin, etc. Additionally, the interlayer insulating layer 290 may be formed using a printing process, spin coating process, chemical vapor deposition process, etc.

The interlayer insulating layer 290 may be partially etched to form contact holes exposing the drain regions and source regions of the first and second active patterns 230 and 235. While filling these contact holes, first drain electrodes 255, first source electrodes 260, second drain electrodes 265, and second source electrodes 270 are formed on the interlayer insulating layer 290. can be formed. At the same time, data lines 295 and 300 may be formed on the interlayer insulating layer 290 in the display and peripheral areas III and IV. These data lines 295 and 300 may be electrically connected to the first and second source electrodes 260 and 270.

In exemplary embodiments, a conductive layer (not shown) is formed on the interlayer insulating layer 290 while filling the contact holes, and then the conductive layer is patterned to form first and second drain electrodes 255. , 265), first and second source electrodes 260 and 270, and data lines 295 and 300 can be obtained. The conductive layer may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, the conductive layer may be aluminum, aluminum-containing alloy, aluminum nitride, silver, silver-containing alloy, tungsten, tungsten nitride, copper, copper-containing alloy, nickel, chromium, chromium nitride, molybdenum. , alloys containing molybdenum, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc. It can be done. These can be used alone or in combination with each other. Additionally, the conductive layer may be formed using a printing process, sputtering process, vacuum deposition process, chemical vapor deposition process, etc.

The first and second drain electrodes 255 and 265 may be connected to the drain regions of the first and second active patterns 230 and 235, respectively, and the first and second source electrodes 260 and 270 ) may be connected to the source regions of the first and second active patterns 230 and 235, respectively. According to the formation of the first and second drain electrodes 255 and 265 and the first and second source electrodes 260 and 270, first transistors 275 and second transistors are formed on the upper part of the substrate 220. (280) can be formed. The first transistors 275 and second transistors 280 may be formed in the display area III and the peripheral area IV, respectively.

As illustrated in FIG. 6 , while forming the data lines 295 and 300, a metal layer pattern 305 adjacent to the outermost data line 303 may be simultaneously formed in the peripheral area IV. According to example embodiments, the insulating layer pattern of the blocking structure may be difficult to form directly on the interlayer insulating layer 290. When the metal layer pattern 305 is interposed between the interlayer insulating layer 290 and the insulating layer pattern of the blocking structure, the insulating layer pattern of the blocking structure can be formed relatively easily. For example, the metal layer pattern 305 can improve the structural stability of the blocking structure. As will be described later, when the display device is provided with first to third blocking structures 370, 380, and 390 (see FIG. 7), the metal layer pattern 305 is the third blocking structure 390. It may correspond to a metal layer pattern. Here, a portion 303 of the outermost data line 303 may be the second metal layer pattern of the second blocking structure 380, and a portion of the subsequently formed protection member 340 may be the first blocking structure ( It may correspond to the first metal layer pattern of 370).

The insulating layer 310 covering the first transistors 275 and data line 295 in the display area (III) and the second transistors 280 and peripheral circuits in the peripheral area (IV) is an interlayer insulating layer 290. may be formed on the The insulating layer 310 may extend to cover one side of the outermost data line 300. The insulating layer 310 may be formed using organic materials such as polyimide resin, photoresist, acrylic resin, polyamide resin, and siloxane resin. For example, the insulating layer 310 may be formed using a printing process, inkjet process, spin coating process, etc. Optionally, the insulating layer 310 may be formed using an inorganic material such as a silicon compound or metal oxide.

In example embodiments, while forming the insulating layer 310, insulating layer patterns 325 and 330 may be formed in the peripheral area IV. That is, the insulating layer 310 and the insulating layer patterns 325 and 330 may be formed simultaneously. Here, one insulating layer pattern 325 may be formed on a portion of the outermost data line 300, and another insulating layer pattern 330 may be formed on the metal layer pattern 305. One side of the outermost data line 300 may be covered by the insulating layer 310, and the other side of the outermost data line 300 may be covered by the insulating layer pattern 325. As described above, the insulating layer patterns 325 and 330 made of an organic material can be formed relatively easily on the outermost data line 300 and the metal layer pattern 305.

Referring again to 6, the insulating layer 335 of the display area III may be partially etched to form contact holes exposing the first drain electrodes 255 of the first transistors 275. Contacts 315 and first electrodes 335 may be formed on the insulating layer 335 in the display area III while filling the contact holes. At this time, a protection member 340 may be formed on the insulating layer 310 in the peripheral area IV and the outermost data line 300. The first electrodes 255 and the protective member 340 may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. Additionally, the first electrodes 255 and the protective member 340 may be obtained using a sputtering process, a printing process, a chemical vapor deposition process, a vacuum deposition process, etc.

The first electrodes 335 may be electrically connected to the first drain electrodes 255 through contacts 315 formed on the insulating layer 330, respectively. The protection member 340 may extend from the upper surface of the insulating layer 310 in the peripheral area IV to the upper surface of the insulating layer pattern 325 while covering the exposed portion of the outermost data line 300. In example embodiments, a portion of the protection member 340 formed on the outermost data line 300 may function as a first metal layer pattern of the first blocking structure 370. The protection member 340 performs the function of protecting the peripheral circuit including the gate driver, data driver, timing controller, etc. from static electricity, shock, etc., in addition to the second transistors 280 and the outermost data line 300. You can.

Referring to FIG. 7, a pixel defining layer 345 having openings partially exposing the first electrodes 335 is formed on the first electrodes 335 and the insulating layer 310 in the display area III. can do. In this case, the first insulating layer pattern 320, the second insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are formed on the protection member 340 in the peripheral area IV. This can be formed. The first insulating layer pattern 320 may be formed on the protective member 340, and the third insulating layer pattern may be formed on the protective member 340 and one insulating layer pattern 325 that has already been formed. The fifth and sixth insulating layer patterns 355 and 360 may be sequentially formed on another previously formed insulating layer pattern 330 . Although not shown, the sixth insulating layer pattern 360 may be obtained during the process of forming a spacer on the pixel defining layer 345. For example, while the pixel defining layer 345 and the spacer are formed in the display area III using a halftone mask, halftone slit mask, etc., the first insulating layer pattern 320 is formed in the peripheral area III. , a third insulating layer pattern 350, a fifth insulating layer pattern 355, and a sixth insulating layer pattern 360 may be formed.

According to the formation of the first insulating layer pattern 320, the first blocking structure 370 including the first insulating layer pattern 320 and the first metal layer pattern corresponding to a part of the protective member 340 can be obtained. You can. Additionally, the insulating layer patterns 325 previously formed according to the first insulating layer pattern 320 may be called the second insulating layer pattern and the fourth insulating layer pattern, respectively. Accordingly, the second blocking structure 380 including the second metal layer pattern 303, the second insulating layer pattern 325, and the third insulating layer pattern 350 will be formed on the outermost data line 300. You can. In addition, the third blocking structure 390 including the third metal layer pattern 305, the fourth insulating layer pattern 330, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 serves as the second blocking structure. It may be formed adjacent to the structure 380.

In example embodiments, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360. can be formed using each organic material. For example, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are polyimide-based. It can be formed using resin, photoresist, polyacrylic resin, polyamide resin, acrylic resin, etc. In addition, the pixel defining layer 345, the first insulating layer pattern 320, the third insulating layer pattern 350, the fifth insulating layer pattern 355, and the sixth insulating layer pattern 360 are performed through a printing process or an inkjet process. , can be formed through a spin coating process, etc.

Light-emitting layers 365 may be formed on the first electrodes 335 exposed by the openings of the pixel defining layer 345. In the process of forming the light emitting layers 365, an organic light emitting layer (EL), a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer are formed on each of the first electrodes 335. Layers (EIL), etc. can be formed sequentially. Here, the organic light-emitting layer may be formed using light-emitting materials that can generate different color lights, such as red light, green light, and blue light, depending on the type of pixels of the display device. Optionally, the organic light emitting layer may be formed by stacking a plurality of light emitting materials capable of generating different color lights such as red light, green light, and blue light to generate white light.

In example embodiments, while a mask (not shown) is disposed on the pixel defining layer 345 and the spacer to form the light emitting layers 365 in the display area III, the peripheral area IV The second blocking structure 380 and/or the third blocking structure 390 formed in can prevent damage to lower structures due to the mask. For example, by contacting the second blocking structure 380 and/or the third blocking structure 390 with the mask, damage to the lower structure due to contact between the lower structure and the mask can be prevented.

A second electrode 370 may be formed on the light emitting layers 365, the pixel defining layer 345, and the spacer. The second electrode 370 may extend onto a portion of the protection member 340 that is in contact with the pixel defining layer 345. The second electrode 370 may be formed using metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc.

As illustrated in FIG. 7, a first organic layer 395 is formed covering the display structures in the display area III and the first to third blocking structures 370, 380, and 390 in the peripheral area IV. You can. The first organic layer 395 may be formed using polyimide-based resin, polyacrylic-based resin, polyamide-based resin, etc. Additionally, the first organic layer 395 may be obtained using a printing process, inkjet process, spin coating process, vacuum deposition process, etc. In exemplary embodiments, after applying a monomer capable of forming the above-described resin on the display structures and the first to third blocking structures 370, 380, and 390, the monomer is subjected to heat treatment or The first organic layer 395 can be obtained by performing ultraviolet treatment. While forming the first organic layer 395, the first blocking structure 370 may primarily block leakage of the first organic layer 395 into the peripheral area IV.

A first inorganic layer 400 may be formed on the first organic layer 395. The first inorganic layer 400 may be obtained by depositing a metal compound using a vacuum deposition process, sputtering process, chemical vapor deposition process, etc.

Although not shown, a display device having a configuration substantially the same as or similar to the display device 10 described with reference to FIG. 1 can be obtained by alternately stacking additional organic layers and additional inorganic layers on the first inorganic layer 400. there is. Optionally, two or more organic layers and two or more inorganic layers may be alternately stacked on the first inorganic layer 400.

Figure 8 is a cross-sectional view showing a display device according to still other embodiments of the present invention. In the display device illustrated in FIG. 8, the same reference numerals are used for components described with reference to FIG. 1, and detailed descriptions of these components are omitted.

Referring to FIG. 8 , the display device may include one or more additional blocking structures 185 disposed in areas between pixels. In other words, the pixels may include first to third blocking structures 98, 100, and 115, respectively.

In still other example embodiments, the display device may include three additional blocking structures 185 . These additional blocking structures 185 may include the same number of blocking patterns, and thus the additional blocking structures 185 may have substantially the same heights. In this case, each of the additional blocking structures 185 may have a height that is substantially the same as or similar to the third height of the third blocking structure 115 . Optionally, the additional blocking structures 185 may have different heights.

As illustrated in FIG. 8, each additional blocking structure 185 includes a first insulating layer pattern 190, a second insulating layer pattern 193, a third insulating layer pattern 194, a metal layer pattern 195, It may include a fourth insulating layer pattern 198, a fifth insulating layer pattern 200, and a sixth insulating layer pattern 203. The first insulating layer pattern 185, the second insulating layer pattern 193, and the third insulating layer pattern 194 are substantially the same as the buffer layer 25, the gate insulating layer 30, and the interlayer insulating layer 45, respectively. or may contain similar substances. The metal layer pattern 195 of the additional blocking structure 185 may include materials that are substantially the same as or similar to those of the data lines 50 and 55. In addition, the fourth insulating layer pattern 198, the fifth insulating layer pattern 200, and the sixth insulating layer pattern 203 are substantially the same as or similar to the insulating layer 60, the pixel defining layer 80, and the spacer, respectively. May contain substances.

According to still other example embodiments, the display device may include additional blocking structures 185 disposed between adjacent pixels, thereby including the display structures during the masking process of forming the light emitting layers 85. Damage to lower structures can be more effectively prevented.

In the above, the display device and the manufacturing method of the display device according to exemplary embodiments of the present invention have been described with reference to the drawings. However, the above-described embodiments are illustrative and the technical aspects of the present invention described in the patent claims are not limited to the present invention. It may be modified, modified, and changed by a person with ordinary knowledge in the relevant technical field without departing from the scope of the idea.

The present invention can be applied to various electrical and electronic devices, including display devices, to improve durability and reliability of the electrical and electronic devices. For example, display devices according to exemplary embodiments of the present invention include computers, laptops, digital cameras, video camcorders, mobile phones, smartphones, smart pads, PMPs, PDAs, MP3 players, navigation, It can be applied to video phones, surveillance systems, tracking systems, motion detection systems, image stabilization systems, etc.

10: display device 20, 220: substrate
25, 225: buffer layer 30, 240: gate insulating layer
35, 275: first transistors 40, 280: second transistors
45, 290: interlayer insulating layer 50, 55, 295, 300: data line
60, 310: insulating layer 65, 335: first electrode
70, 340: protective member 75, 315: contact
80, 345: pixel defining layer 85, 365: light emitting layer
90, 370: second electrode 98, 100', 370: first blocking structure
100. 115', 380: second blocking structure 115, 390: third blocking structure
160: fourth blocking structure 140, 395: first organic layer
145, 400: first inorganic layer 150: second organic layer
155: second inorganic layer 185: additional blocking structure

Claims (23)

Substrate containing display area and surrounding area:
A display structure disposed in the display area of the substrate and including a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer:
an organic layer disposed on the second electrode;
a metal layer disposed in a peripheral area of the substrate;
a plurality of blocking structures disposed on the metal layer; and
A protective member disposed in the peripheral area and at least partially overlapping the metal layer,
The height of the first blocking structure among the blocking structures is different from the height of the second blocking structure among the blocking structures,
The first blocking structure is disposed on an upper surface of the protective member and overlaps the protective member,
The display device is characterized in that the first blocking structure is spaced apart from the second blocking structure in a horizontal direction. The display device of claim 1, wherein the protection member is electrically connected to the second electrode. The display device of claim 1, wherein the second blocking structure is in direct contact with the metal layer. The display device of claim 1, wherein the metal layer includes an outermost wiring. The display device of claim 1, further comprising a transistor disposed in the display area of the substrate, wherein the metal layer includes the same material as the source electrode and drain electrode of the transistor. The display device of claim 1, further comprising a transistor disposed in the display area of the substrate, wherein the metal layer is formed simultaneously with the source electrode and drain electrode of the transistor. The display device of claim 1, further comprising a plurality of inorganic layers disposed on the organic layer, wherein the organic layer is interposed between the inorganic layers. The display device of claim 7, wherein the inorganic layers contact each other in a peripheral area of the substrate. The display device of claim 1, further comprising an additional metal layer disposed in a peripheral area of the substrate, wherein the additional metal layer is spaced apart from the metal layer. The display device of claim 9, wherein at least one of the additional metal layer and the metal layer includes an outermost wiring. The display device of claim 1, further comprising an insulating layer that at least partially exposes the substrate in a peripheral area of the substrate, wherein the metal layer is disposed on the insulating layer. Substrate containing display area and surrounding area:
A display structure disposed in the display area of the substrate and including a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer:
an organic layer disposed on the second electrode;
a metal layer disposed in a peripheral area of the substrate;
a plurality of inorganic layers disposed on the organic layer;
a plurality of protrusions disposed on the metal layer; and
A protective member disposed in the peripheral area and at least partially overlapping the metal layer,
The organic layer is sandwiched between the inorganic layers,
A display device wherein a first protrusion of the plurality of protrusions is horizontally spaced apart from a second protrusion of the plurality of protrusions. The display device of claim 12, wherein the protection member is electrically connected to the second electrode. The display device of claim 12, wherein at least one of the plurality of protrusions directly contacts the metal layer. The display device of claim 12, wherein the metal layer includes an outermost wiring. The display device of claim 12, further comprising a transistor disposed in the display area of the substrate, wherein the metal layer includes the same material as the source electrode and drain electrode of the transistor. The display device of claim 12, further comprising a transistor disposed in the display area of the substrate, wherein the metal layer is formed simultaneously with the source electrode and drain electrode of the transistor. The display device of claim 12, wherein the inorganic layers contact each other in a peripheral area of the substrate. The display device of claim 12, further comprising an additional metal layer disposed in a peripheral area of the substrate, wherein the additional metal layer is spaced apart from the metal layer. The display device of claim 19, wherein at least one of the additional metal layer and the metal layer includes an outermost wiring. The display device of claim 12, further comprising an insulating layer that at least partially exposes the substrate in a peripheral area of the substrate, wherein the metal layer is disposed on the insulating layer. The display device of claim 12, wherein the protrusions have different heights. The display device of claim 12, wherein the protrusions have the same height.

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