KR20220075736A - Organic light emitting display device - Google Patents

Abstract

The present specification discloses an organic light emitting display device. The organic light emitting display device may include: a substrate including a display area and a non-display area surrounding the display area; one or more inorganic layers in a display area and a non-display area on the substrate; a planarization layer on the one or more inorganic layers; a connecting metal layer on the planarization layer connected to the organic light emitting diode in the display area; a first opening provided in the connection metal layer; A second opening penetrating the one or more inorganic layers may be included.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

This specification relates to an organic light emitting display device.

A video display device that implements various information on a screen is a key technology in the information and communication era, and is developing in the direction of thinner, lighter, more portable and high-performance. Accordingly, an organic light emitting display device that displays an image by controlling the amount of light emitted from the organic light emitting device is in the spotlight.

The organic light emitting device has the advantage that it can be thinned as a self light emitting device using a thin light emitting layer between electrodes. A typical organic light emitting display device has a structure in which a pixel driving circuit and an organic light emitting device are formed on a substrate, and an image is displayed while light emitted from the organic light emitting device passes through a substrate or a barrier layer.

Since the organic light emitting display device is implemented without a separate light source device, it is easy to be implemented as a flexible display device. In this case, a flexible material such as plastic or a metal foil may be used as a substrate of the organic light emitting display device.

Moisture-proof design is very important because organic light-emitting devices deteriorate when exposed to moisture. Accordingly, various moisture permeation prevention designs are being applied to display devices. Also important is a design that suppresses the diffusion of moisture and/or substances that adversely affect the device. Accordingly, an object of the present specification is to propose an organic light emitting display device and a protective structure of an organic light emitting device applied to the organic light emitting display device. The tasks of the present specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

According to an embodiment of the present specification, an organic light emitting display device is provided. The organic light emitting display device may include: a substrate including a display area and a non-display area surrounding the display area; one or more inorganic layers in a display area and a non-display area on the substrate; a planarization layer on the one or more inorganic layers; a connecting metal layer on the planarization layer connected to the organic light emitting diode in the display area; a first opening provided in the connection metal layer; A second opening penetrating the one or more inorganic layers may be included.

The first opening and the second opening may be an out-gassing hole provided to discharge residual gas of the planarization layer, and the first opening and the second opening may include residual gases in the planarization layer. It is provided to suppress the gas from moving to the organic light emitting element.

The connection metal layer may connect the low-level power VSS and the cathode of the organic light emitting diode. In this case, the connection metal layer may be made of the same material as the anode of the organic light emitting diode.

The organic light emitting diode display includes: a bank on the first opening; It may further include a reactive layer on the bank.

The reaction layer may be provided to react with residual gas in the planarization layer, and the reaction layer may include a desiccant.

The organic light emitting display device may further include an encapsulation layer on the reactive layer, wherein the encapsulation layer may include a first inorganic film on the reactive layer, an organic film on the first inorganic film, and a second inorganic film on the organic film. have.

The second opening may include a through hole extending from the planarization layer to the substrate. In this case, the through hole included in the second opening may have a larger planar area than the through hole included in the first opening.

The one or more inorganic layers may include at least one of a buffer layer, a gate insulating layer, and an interlayer insulating layer.

Details of other embodiments are included in the detailed description and drawings.

Embodiments of the present specification may provide an organic light emitting display device in which the problem of damage to the organic light emitting diode is improved. More specifically, according to the embodiments of the present specification, damage to the light emitting part of the organic light emitting device from the residual gas may be prevented. Accordingly, the organic light emitting display device according to the embodiments of the present specification may have improved reliability in a high temperature environment. . Effects according to the embodiments of the present specification are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a plan view illustrating an organic light emitting display device according to an embodiment of the present specification.
2 is a cross-sectional view illustrating a portion of a display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.
3 is a diagram illustrating a part of a non-display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.
4 is a diagram illustrating a structure of a non-display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.
5 is a diagram illustrating a structure of a non-display area of an organic light emitting diode display according to another exemplary embodiment of the present specification.

Advantages and features of the present specification, and a method for achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present specification are exemplary, and thus the present specification is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, cases including the plural are included unless otherwise explicitly stated. In interpreting the components, it is construed as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used. Reference to a device or layer “on” another device or layer includes any intervening layer or other device directly on or in the middle of the other device or layer. When it is described that a component is “connected”, “coupled” or “connected” to another component, the component may be directly connected or connected to the other component, but other components may be interposed between each component. It should be understood that each component may be “interposed” or “connected”, “coupled” or “connected” through another component.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component. Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view illustrating an organic light emitting display device according to an embodiment of the present specification.

Referring to FIG. 1 , the organic light emitting display device 100 includes at least one active area (A/A), in which an array of pixels is disposed. One pixel may include a plurality of sub-pixels. In this case, a sub-pixel is a minimum unit for expressing one color. One sub-pixel circuit may include a plurality of transistors and capacitors, and a plurality of wirings. The sub-pixel circuit may include two transistors and one capacitor 2T1C, but is not limited thereto and may be implemented as a sub-pixel circuit to which 4T1C, 7T1C, 6T2C, etc. are applied. In addition, the sub-pixel may be implemented to be suitable for the top-emission type organic light emitting display device 100 .

One or more inactive areas (I/A) may be disposed around the display area. That is, the non-display area may be adjacent to one or more side surfaces of the display area. In FIG. 1 , the non-display area surrounds a rectangular display area. However, the shape of the display area and the shape/arrangement of the non-display area adjacent to the display area are not limited to the example illustrated in FIG. 1 . The display area and the non-display area may have a shape suitable for designing an electronic device on which the display device 100 is mounted. Exemplary shapes of the display area are pentagonal, hexagonal, circular, oval, and the like.

Each pixel in the display area A/A may be associated with a pixel circuit. The pixel circuit may include one or more switching transistors and one or more driving transistors. Each pixel circuit may be electrically connected to a signal line (gate line, data line, etc.) to communicate with a gate driver and a data driver located in the non-display area.

The gate driver and the data driver may be implemented as thin film transistors (TFTs) in the non-display area I/A. Such a driver may be referred to as a gate-in-panel (GIP). In addition, some components such as data driver IC are mounted on a separate printed circuit board, and circuit films such as FPCB (flexible printed circuit board), COF (chip-on-film), TCP (tape-carrier-package), etc. Through the connection interface (pad, bump, pin, etc.) disposed in the non-display area may be coupled. The printed circuit (COF, PCB, etc.) may be located behind the display device 100 .

The organic light emitting diode display 100 may include various additional elements for generating various signals or driving pixels in the display area. Additional elements for driving the pixel may include an inverter circuit, a multiplexer, an electrostatic discharge (ESD) circuit, and the like. The organic light emitting diode display 100 may also include additional elements related to functions other than pixel driving. For example, the organic light emitting display device 100 may include additional elements that provide a touch sensing function, a user authentication function (eg, fingerprint recognition), a multi-level pressure sensing function, a tactile feedback function, etc. have. The above-mentioned additional elements may be located in the non-display area and/or in an external circuit connected to the connection interface.

2 is a cross-sectional view illustrating a portion of a display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.

The organic light emitting diode display 100 may include a substrate 101 , a thin film transistor, an organic light emitting diode, and various functional layers.

The substrate 101 serves to support and protect the components of the organic light emitting diode display 100 disposed thereon. The substrate 101 may be a flexible substrate made of a flexible material having a flexible characteristic. The substrate 101 may be a glass or plastic substrate. In the case of a plastic substrate, a polyimide-based or polycarbonate-based material may be used to have flexibility. In particular, polyimide is widely used as a plastic substrate because it can be applied to high-temperature processes and can be coated.

The buffer layer 103 is a functional layer for protecting the electrode/wire from impurities such as alkali ions leaking from the substrate 101 or the underlying layers. The buffer layer may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The buffer layer 103 may include a multi-buffer and/or an active buffer. The multi-buffer may be formed by alternately stacking silicon nitride (SiNx) and silicon oxide (SiOx), and may delay diffusion of moisture and/or oxygen penetrating into the substrate 101 . The active buffer protects the semiconductor layer 102 of the transistor and blocks various types of defects introduced from the substrate 101 . The active buffer may be formed of, for example, amorphous silicon (a-Si).

The thin film transistor includes a gate electrode 104 , source and drain electrodes 108 , and a semiconductor layer 102 . The semiconductor layer 102 may be made of amorphous silicon or polycrystalline silicon. Polycrystalline silicon has better mobility than amorphous silicon, so it has low energy consumption and excellent reliability. Recently, oxide semiconductors have been in the spotlight because of their excellent mobility and uniformity. The semiconductor layer 102 may include a source region including p-type or n-type impurities, a drain region, and a channel between the source region and the drain region, and adjacent to the channel. A lightly doped region may be included between the source region and the drain region.

The gate insulating layer 105 is an insulating film composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), and is provided so that a current flowing through the semiconductor layer 102 does not flow to the gate electrode 104 .

The gate electrode 104 serves as a switch that turns on or off the thin film transistor based on an electrical signal transmitted from the outside through the gate line, and a conductive metal copper ( Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), etc. or alloys thereof as a single layer or multiple layers can be configured. The source and drain electrodes 108 are connected to the data line and allow an electric signal transmitted from the outside to be transmitted from the thin film transistor to the organic light emitting diode. The source and drain electrodes 108 are conductive metals such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). ) may be composed of a single layer or multiple layers of metal materials such as or alloys thereof.

In order to insulate the gate electrode 104 and the source and drain electrodes 108 from each other, an interlayer insulating layer 106 composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx) is formed with the gate electrode 104 and It may be disposed between the source and drain electrodes 108 .

A protective layer made of an inorganic insulating layer such as silicon oxide (SiOx) or silicon nitride (SiNx) may be positioned on the thin film transistor. The protective layer may prevent unnecessary electrical connections between components of the thin film transistor and prevent external contamination or damage. The protective layer may be omitted depending on the configuration and characteristics of the thin film transistor and the organic light emitting device.

For convenience of explanation, only the driving thin film transistor is illustrated among various thin film transistors, but a switching thin film transistor, a capacitor, etc. may also be included in the display area. When a signal is applied from the gate line to the switching thin film transistor, the signal from the data line is transferred to the gate electrode of the driving thin film transistor. The driving thin film transistor transmits a current transmitted through the power wiring to the anode according to a signal received from the switching thin film transistor, and light emission is controlled by the current transmitted to the anode.

A planarization layer 109 is disposed on the thin film transistor. The planarization layer 109 protects the thin film transistor and relieves a step difference caused by the thin film transistor, and reduces parasitic-capacitance generated between the thin film transistor, the gate line, the data line, and the organic light emitting diode. The planarization layer 109 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamides resin, a polyimides resin, an unsaturated polyester resin (Unsaturated Polyesters Resin), polyphenylene-based resin (Polyphenylene Resin), polyphenylenesulfide-based resin (Polyphenylenesulfides Resin), and benzocyclobutene (Benzocyclobutene) may be formed of at least one material.

The organic light emitting device is disposed on the planarization layer 109 . The organic light emitting diode includes an anode 112 , a light emitting unit 114 , and a cathode 116 . The organic light emitting device may have a structure of a single light emitting unit emitting one light, or a structure of emitting white light by stacking a plurality of light emitting units. When the organic light emitting diode emits white light, a color filter may be further provided. The anode 112 may be disposed directly on the planarization layer 109 . The anode 112 is an electrode serving to supply holes to the light emitting part 114 , and may be electrically connected to the thin film transistor through a contact hole in the planarization layer 109 . The anode 112 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which are transparent conductive materials. In the case where the organic light emitting diode display 100 emits light upward (Top Emission), the anode includes a reflective layer so that the emitted light can be more smoothly emitted in the upward direction in which the cathode 116 is disposed. may include more. The anode 112 may have a two-layer structure in which a transparent conductive layer and a reflective layer made of a transparent conductive material are sequentially stacked, or a three-layer structure in which a transparent conductive layer, a reflective layer, and a transparent conductive layer are sequentially stacked, and the reflective layer is It may be silver (Ag) or an alloy containing silver.

The bank 110 is disposed on the anode 112 and the planarization layer 109 and may define a region that actually emits light. The bank 110 is formed by photolithography after forming a photoresist on the anode 112 . The photoresist refers to a photosensitive resin whose solubility in a developer is changed by the action of light, and a specific pattern can be obtained by exposing and developing the photoresist.

A fine metal mask (FMM), which is a deposition mask, may be used to form the light emitting part 114 of the organic light emitting device. In this case, in order to prevent damage that may be caused by contact with the deposition mask disposed on the bank 110 and to maintain a constant distance between the bank 110 and the deposition mask, a transparent organic material is placed on the bank 110 . A spacer 111 made of one of phosphorus polyimide, photoacryl, and benzocyclobutene (BCB) may be disposed.

A light emitting part 114 is disposed between the anode 112 and the cathode 116 . The light emitting unit 114 serves to emit light, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer ( It may include at least one of an Electron Transport Layer (ETL) and an Electron Injection Layer (EIL), and a part of the light emitting unit 114 is configured according to the structure or characteristics of the organic light emitting display device 100 . Elements may be omitted.

The cathode 116 is disposed on the light emitting unit 114 and serves to supply electrons to the light emitting unit 114 . Since the cathode 116 needs to supply electrons, it may be made of a metal material such as magnesium (Mg) or silver-magnesium (Ag:Mg), which is a conductive material having a low work function. When the organic light emitting diode display 100 is a top emission type, the cathode 116 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide ( It may be a transparent conductive oxide based on zinc oxide (ZnO) and tin oxide (TiO).

An encapsulation layer 120 for preventing oxidation or damage caused by moisture, oxygen, or impurities introduced from the outside may be disposed on the organic light emitting diode. The encapsulation layer 120 may be formed by laminating a plurality of inorganic layers, a foreign material compensation layer, and a plurality of barrier films. The inorganic layer is disposed on the entire upper surface of the organic light emitting diode, and may be formed of one of inorganic materials such as silicon nitride (SiNx) or aluminum oxide (AlyOz). An inorganic layer may be further stacked on the foreign material compensation layer. The foreign material compensation layer is disposed on the inorganic material layer, and an organic material such as silicon oxycarbon (SiOCz), acryl or epoxy-based resin may be used. The foreign material compensation layer compensates while covering the bending and foreign material when a defect occurs due to a crack generated by a foreign material or particle that may be generated during the process.

A touch electrode (panel), a polarizing film, a cover glass, and the like may be further positioned on the encapsulation layer 120 .

3 is a diagram illustrating a part of a non-display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.

The non-display area I/A may be located outside the display area A/A as shown in FIG. 1 , and a driving circuit (eg, GIP), power wiring, etc. may be disposed thereon. . Although the pixel circuit and the light emitting device are not disposed in the non-display area I/A, the substrate 101 and the organic/inorganic functional layers 103 , 105 , 109 , etc. may be present. In addition, materials used to form the display area A/A may be disposed in the non-display area I/A for different purposes. For example, the same metal 104' as the gate electrode of the display area TFT, or the same metal 108' as the source/drain electrode may be disposed in the non-display area I/A for wiring or electrodes. Furthermore, the same metal 112 ′ as one electrode (eg, an anode) of the organic light emitting diode may be disposed in the non-display area I/A for wiring and electrodes.

An encapsulation layer 120 covers an upper portion of the organic light emitting diode. The encapsulation layer may be formed of an inorganic film made of a glass, metal, aluminum oxide (AlOx) or silicon (Si)-based material, or may have a structure in which an organic film and an inorganic film are alternately stacked. The inorganic layers 121 and 123 block penetration of moisture or oxygen, and the organic layer 122 serves to planarize the surface of the inorganic layer 121 .

The organic layer 122 has flowability to a certain degree, and may flow to the outside of the non-display area during application. Accordingly, the blocking structure 190 is disposed to control the spreading of the organic layer 122 in the non-display area I/A. Although it is illustrated that two blocking structures (dams) are disposed in FIG. 3 , the dams may be disposed in other numbers. Also, the dam 190 may be disposed to surround the display area A/A or may be disposed within the display area A/A. The dam 190 may be formed in multiple layers using at least one material. For example, the dam 190 may be made using the material used to form the planarization layer 109 , the bank 110 , and the spacers 111 .

Various circuits and electrodes/wires disposed in the non-display area I/A may be made of the gate metal 104 ′ and/or the source/drain metal 108 ′. In this case, the gate metal 104' is formed of the same material as the gate electrode of the TFT in the same process, and the source/drain metal 108' is formed of the same material as the source/drain electrode of the TFT in the same process.

For example, the source/drain metal may be used as a power supply (eg, a low-level power supply (VSS), a high-level power supply (VDD), etc.) wiring 108 ′. At this time, the power wiring 108 ′ is connected to the metal layer 112 ′, and the cathode 116 of the organic light emitting diode is powered through the connection with the source/drain metal 108 ′ and the metal layer 112 ′. can be supplied. The metal layer 112 ′ may be in contact with the power wiring 108 ′ and may extend along the outermost sidewall of the planarization layer 109 to contact the cathode 116 on the planarization layer 109 . The metal layer 112 ′ may be a metal layer formed of the same material as the anode 112 of the organic light emitting diode in the same process.

4 is a diagram illustrating a structure of a non-display area of an organic light emitting diode display according to an exemplary embodiment of the present specification.

The planarization layer 109 covering the thin film transistor may be formed of a resin such as photo acryl and/or polyimide. The planarization layer 109 may absorb moisture when exposed to the atmosphere, or gas such as hydrogen may remain therein after baking. Such moisture or residual gas may affect or damage a semiconductor layer of a thin film transistor, an organic light emitting device, a cathode electrode, and the like in the long term. For example, the moisture or residual gas may penetrate into the light emitting part 114 of the organic light emitting device and cause defects such as dark spots. Therefore, minimizing moisture and/or residual gas in the planarization layer 109 is very important for improving reliability and stability of the organic light emitting diode display.

Accordingly, the organic light emitting diode display according to the exemplary embodiment of the present specification also has a structure for discharging the residual gas G to the non-display area I/A. As shown in FIG. 4 , the organic light emitting display device includes a plurality of through holes H1 in the connection metal layer 112 ′ covering the planarization layer 109 , so that the gas G passes through the through holes H1 . can be induced to release.

However, the inventors have discovered a weakness that appears in the gas exhaust structure as shown in FIG. 4 . One of them is that the gas is not sufficiently exhausted through this structure. In the structure shown in FIG. 4 , the residual gas G moves to the bank 110 , which is the upper layer of the planarization layer 109 , through the through hole H1 , but the upper part of the bank 110 is blocked with the inorganic film 121 , The residual gas (G) is not completely discharged to the outside. Accordingly, the gas G that has not been discharged may diffuse through the bank 110 to cause deterioration in the light emitting unit 114 and/or the cathode 116 . In particular, in a high-temperature environment, the generation of the gas G and deterioration of the organic light emitting device due to the gas G are accelerated. As a result, it was observed that discoloration defects were mainly observed in the vicinity of the edge of the display area A/A. The residual gas G may be N-Methyl 2-Pyrrolidone (NMP), etc., and it was confirmed that NMP may adversely affect the charge balance of the organic light emitting device by chemical bonding with the dopant of the organic light emitting unit.

The inventors of the present invention have devised a structure that can more effectively reduce the residual gas (G) inside the planarization layer 109, recognizing the above weaknesses and risks.

5 is a diagram illustrating a structure of a non-display area of an organic light emitting diode display according to another exemplary embodiment of the present specification.

Among the components of FIG. 5 , redundant descriptions of the same components as those of FIGS. 1 to 4 will be omitted. The organic light emitting diode display according to the present exemplary embodiment may include a structure that suppresses movement of gas generated in the planarization layer 109 . The suppression structure may be provided by locating the gas outlets H1 and H2 respectively above and below the planarization layer 109 in the non-display area. The gas outlet is provided to discharge the residual gas in the planarization layer, and includes a first opening penetrating through the connection metal layer above the planarization layer and a second opening penetrating through the inorganic layer below the planarization layer. can In addition, a functional layer 114 ′ holding the gases may be further disposed on the planarization layer 109 .

The organic light emitting diode display according to the present embodiment includes: a substrate 101 having a display area A/A and a non-display area I/A surrounding the display area; at least one inorganic material layer in the display area A/A and the non-display area I/A of the substrate 101; a planarization layer (109) on the one or more inorganic layers; a connection metal layer 112 ′ on the planarization layer 109 connected to the organic light emitting diodes 112 , 114 , 116 in the display area A/A; a first opening H1 provided in the connection metal layer 112 ′; and a second opening H2 passing through the one or more inorganic layers.

The first opening H1 and the second opening H2 are out-gassing holes provided to discharge the residual gas G of the planarization layer 109 . That is, the first opening H1 and the second opening H2 are provided to suppress the residual gas G in the planarization layer 109 from moving to the organic light emitting device.

The first opening H1 may be formed by drilling one or more holes in the connection metal layer 112 ′. The residual gas G in the planarization layer 109 may move out of the planarization layer through the through hole. The connecting metal layer 112 ′ may be a metal connecting the low-level power VSS and the cathode 116 of the organic light emitting diode. The wiring 108 ′ transmitting the low level (VSS) voltage is connected to the connection metal layer 112 ′, and the connection metal layer 112 ′ is connected to the cathode 116 , so that the low level voltage is supplied to the organic light emitting diode. can be The connecting metal layer 112 ′ may be made of the same material as the anode 112 of the organic light emitting diode. The connection metal layer 1112 ′ may be made of a transparent metal material (ITO, IZO, etc.).

A planar shape of the hole included in the first opening H1 may be a circle, an ellipse, a triangle, a square, or other polygons. Since the first opening H1 removes a part of the connection metal layer 112 ′, the electrical resistance increases. Therefore, the size/density of the first opening H1 depends on the specifications (required performance, size, etc.) of the display device. It can be designed according to the usage environment).

The second opening H2 may be formed by drilling one or more holes in the inorganic layer under the planarization layer 109 . The residual gas G in the planarization layer 109 may move to the substrate 101 through such a hole. The inorganic layer may be one or more, and the one or more inorganic layers may include at least one of a buffer layer 103 , a gate insulating layer 105 , and an interlayer insulating layer 106 . A planar shape of the hole included in the second opening H2 may be a circle, an ellipse, a triangle, a square, or other polygons. The hole included in the second opening H2 may have a reverse tapered cross-sectional shape. The second opening H2 may be disposed so as not to overlap various lines disposed in the non-display area, or may be concentratedly disposed in a relatively weaker area (eg, a corner portion).

The hole of the first opening H1 and the hole of the second opening H2 may have different shapes and sizes. For example, since the holes of the first opening H1 must be provided in the connection metal layer 112 ′, many holes cannot be provided in consideration of electrical resistance. On the other hand, since the hole of the second opening H2 is provided in the inorganic layer 103 , 105 , and 106 , there is no such limitation. Accordingly, the second opening H2 may be provided with holes having a larger planar area than the first opening H1 . Accordingly, the holes included in the second opening H2 may have a larger planar shape and/or the number of holes included in the first opening H1 may be greater. For example, the second opening H2 may be configured as a rectangular opening hole having a larger planar area than the first opening H1 . Alternatively, the second opening H2 may have a plurality of square opening holes compared to the first opening H1 .

The organic light emitting diode display according to the present embodiment may further include a reaction layer 114 ′ on the bank 110 . The Shingi reaction layer 114' functions as a structure that further suppresses the diffusion of the gas G. The reaction layer 114' is provided to react with the residual gas (G). That is, the gases G that have moved from the planarization layer 109 to the bank 110 through the first opening H1 are lost or captured by the reaction layer 114 ′. Accordingly, the movement of the gases G to the organic light emitting device through the bank 110 may be suppressed. The reaction layer 114 ′ may be made of the same material as the light emitting part 114 of the organic light emitting diode. In addition, the reaction layer 114 ′ may include a desiccant, and the desiccant may be a material such as silica.

An encapsulation layer 120 may be positioned on the reaction layer 114 ′. The encapsulation layer 120 may include a first inorganic layer 121 on the reaction layer 114 ′, an organic layer 122 on the first inorganic layer, and a second inorganic layer 123 on the organic layer. have.

Diffusion of the residual gas in the planarization layer 109 may be suppressed through the above-described structure. Accordingly, damage to the light emitting unit 114 of the organic light emitting device may be prevented, and reliability of the display device may be improved. Such an advantage is very useful for a vehicle display device that is frequently exposed to a high temperature environment.

Although the embodiments of the present specification have been described in detail with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit thereof. Therefore, the embodiments disclosed in the present specification are for explanation rather than limiting the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments. Each of the features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and may be technically variously linked and operated by those skilled in the art, and each of the embodiments may be implemented independently of each other or together in a related relationship. may be carried out.

The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

Claims (16)

a substrate including a display area and a non-display area surrounding the display area;
one or more inorganic layers in a display area and a non-display area on the substrate;
a planarization layer on the one or more inorganic layers;
a connecting metal layer on the planarization layer connected to the organic light emitting diode in the display area;
a first opening provided in the connection metal layer;
and a second opening penetrating the one or more inorganic layers. According to claim 1,
The first opening and the second opening are out-gassing holes provided to discharge the residual gas of the planarization layer. According to claim 1,
The first opening and the second opening are provided to suppress the residual gas in the planarization layer from moving to the organic light emitting diode. According to claim 1,
The connection metal layer connects a low level power supply (VSS) and a cathode of the organic light emitting diode. According to claim 1,
The connection metal layer is made of the same material as the anode of the organic light emitting diode. According to claim 1,
a bank on the first opening;
and a reactive layer on the bank. 7. The method of claim 6,
The reaction layer is provided to react with the residual gas in the planarization layer. 7. The method of claim 6,
The reaction layer includes an organic light emitting diode display. 7. The method of claim 6,
The organic light emitting display device further comprising an encapsulation layer on the reaction layer. 10. The method of claim 9,
The encapsulation layer includes a first inorganic layer on the reaction layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer. According to claim 1,
The second opening includes a through hole extending from the planarization layer to the substrate. 12. The method of claim 11,
The through hole included in the second opening has a larger plan area than the through hole included in the first opening. According to claim 1,
The at least one inorganic layer includes at least one of a buffer layer, a gate insulating layer, and an interlayer insulating layer. a substrate having a display area and a non-display area surrounding the display area;
a planarization layer in the non-display area;
and gas outlets on and below the planarization layer. 15. The method of claim 14,
The gas outlet is provided to discharge residual gas in the planarization layer. 15. The method of claim 14,
The gas outlet is
a first opening through the connecting metal layer over the planarization layer; and a second opening penetrating through the inorganic layer under the planarization layer.

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