KR20210015950A - Apparatus for thermal treatment, substrate processing system, and method for processing a substrate - Google Patents

Abstract

The present disclosure provides an apparatus 200 for thermally treating a carrier 212 in a processing system. The apparatus includes a carrier 212 configured to support a substrate 230 in a substrate receiving area 232, the carrier 212 having one or more edge portions 214 extending out of the substrate receiving area 232; And a heating arrangement 240 configured to provide thermal energy to one or more edge portions 214.

Description

Apparatus for thermal treatment, substrate processing system, and method for processing a substrate

[0001] The present disclosure generally relates to substrate processing, such as large area substrate processing. In particular, the present disclosure relates to substrate processing on carriers carrying substrates in a substrate processing apparatus. Additionally, the present disclosure relates to apparatuses for thermal treatment, substrate processing systems, and methods for processing a substrate. In particular, the present disclosure relates to apparatuses for thermally treating a carrier, such as a carrier for carrying a substrate in a processing system.

[0002] Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition. The sputter deposition process can be used to deposit a layer of material, such as a layer of a conductive material or an insulating material, onto a substrate. The coated materials can be used in many applications and in many fields of technology. For example, there is one application in the field of microelectronics, such as for creating semiconductor devices. Further, substrates for displays are often coated by physical vapor deposition, such as a sputter deposition process, or chemical vapor deposition (CVD). Additional applications include insulating panels, substrates with TFTs, color filters, and the like.

[0003] Substrate processing systems may include an atmospheric portion, such as a clean room, one or more vacuum chambers, and a load lock chamber for loading substrates from the atmospheric portion to one or more vacuum chambers. have. The load lock chambers may be frequently evacuated and vented to load and/or unload substrates. Additionally, in particular for large area substrates, two different concepts can be provided. On the one hand, the substrates can be directly handled by a robot or the like. On the other hand, substrates can be loaded on a carrier (substrate carrier), and a substrate carrier supporting the substrate can be handled in a vacuum processing system. Carriers increase the equipment being guided through the system and may have some drawbacks, but carriers, in particular, support substrates with a substrate area of up to several square meters and a thickness of less than 1 mm (such as a few tenths of a millimeter). When considered, it has the advantage that glass breakage can be reduced.

[0004] Vacuum processing systems can provide a cycle in which substrates move from atmosphere to vacuum and back to atmosphere. Typically, multiple substrates are processed simultaneously in the system, eg, may be provided at various positions in the cycle. Display manufacturers or other operators of vacuum processing systems may interrupt the operation of the vacuum processing system for several reasons. An interruption, ie a process idle state, can occur, and the substrates supported on the carriers (as well as such carriers) remain in the current position of the cycle. The change from process idle to processing cycles using new substrates can change gas levels or particle load and desorption behavior in the processing system.

[0005] In view of the above, devices, systems, and methods that overcome at least some of the problems in the art are beneficial.

[0006] In accordance with an aspect of the present disclosure, an apparatus for thermally treating a carrier in a processing system is provided. The apparatus comprises: a carrier configured to support a substrate in a substrate receiving area, the carrier having one or more edge portions extending out of the substrate receiving area; And a heating arrangement configured to provide thermal energy to the one or more edge portions.

[0007] In accordance with an aspect of the present disclosure, a substrate processing system is provided. The system includes an apparatus for heat treatment according to an aspect of the present disclosure.

[0008] In accordance with an aspect of the present disclosure, a substrate processing system for processing a substrate supported by a carrier is provided. The system provides a substrate-carrier-arrangement, the substrate-carrier-arrangement comprising: an apparatus for first thermal treatment configured to heat a first region of the substrate-carrier-arrangement; And an apparatus for a second thermal treatment configured to heat a second region of the substrate-carrier-arrangement.

[0009] In accordance with an aspect of the present disclosure, a method for processing a substrate is provided. The method includes loading a substrate into a substrate receiving region on a carrier; Introducing a carrier into the substrate processing system; And heating a region of the carrier different from the substrate receiving region using the apparatus for thermal treatment.

[0010] Embodiments also relate to apparatuses for performing the disclosed methods, and include apparatus parts for performing each described method aspect. These method aspects may be performed by hardware components, by a computer programmed by suitable software, by any combination of the two, or in any other way.

[0011] In such a way that the above-listed features of the present disclosure may be understood in detail, a more specific description of the present disclosure briefly summarized above may be made with reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below.
1 shows a plan view of a processing system according to embodiments described herein.
[0013] Figure 2A shows a front view of a carrier carrying a substrate, according to embodiments described herein.
2B shows a top view of a carrier carrying a substrate, according to embodiments described herein.
3A to 3D illustrate regions susceptible to heat treatment and a carrier according to embodiments described herein.
4 shows a plan view of a substrate processing system according to embodiments described herein.
5A and 5B show side views of a standby module according to embodiments described herein.
6A and 6B show flow charts of a method according to embodiments described herein.

[0019] Reference will now be made in detail to various embodiments of the present disclosure, and one or more examples of the various embodiments are illustrated in the drawings. Within the following description of the drawings, like reference numbers indicate like components. Only the differences for the individual embodiments are described. Each example is provided as a description of the disclosure and is not intended as a limitation of the disclosure. Additionally, features illustrated or described as part of an embodiment may be used in conjunction with or with other embodiments to create further additional embodiments. It is intended that this description include such modifications and variations.

[0020] 1 shows a top view of a substrate processing system 100 in accordance with embodiments described herein. The processing system can include modules. The modules may be chambers or may include chambers. The processing system includes one or more standby modules 170. Standby modules may include a swing module 172. In addition, the processing system may include one or more load lock modules 174, which will also be referred to herein as “pre-vacuum module 182”. I can. Additionally, the processing system may include one or more transfer modules 180. One or more transfer modules 180 may include one or more high-vacuum modules 184.

[0021] According to the embodiments described herein, the processing system includes one or more processing modules 190. Vacuum conditions may be applied to one or more processing modules 190 and/or transfer modules 180 and/or load lock modules 174. Transfer modules 180 including load lock modules 174, processing modules 190, and/or pre-vacuum modules 182 and high-vacuum modules 184 may comprise chambers. have. A processing system can be used to process the substrate 230.

[0022] The processing of a substrate can be understood as transferring material to the substrate. For example, the evaporation material can be deposited on the substrate, for example by a CVD process or a PVD process, such as sputtering or evaporation. The substrate 230 may include a deposition material receiving surface. The deposition material receiving side of the substrate can be regarded as the side of the substrate facing the deposition source. Additionally, processing of the substrate may also include transfer of the substrate from one module of the processing system to another module.

[0023] According to the embodiments described herein, the standby module 170 may be connected to one or more transfer modules 180. Additionally or alternatively, the standby module 170 may be connected to one or more processing modules 190. For example, the load lock module 174 may connect the standby module and one or more high-vacuum modules 184 and/or processing modules 190. The load lock module or chamber may assist in equalizing the pressure differences between the modules. For example, atmospheric pressure is applied to one module, and vacuum is applied to a module connected to that one module through a load lock module.

[0024] Substrate processing system 100 may be a substrate processing system. The system may include a transport arrangement 160 for transporting one or more substrates 230. In particular, transport arrangement 160 may include transport paths 162 extending through the processing system. For example, one or more substrates 230 may be transported from a standby module to one or more processing modules. Additionally, one or more substrates may be transported between one or more processing modules. For example, a plurality of substrates may be transported. In particular, one or more substrates and/or a plurality of substrates may circulate through the substrate processing system 100. For example, the substrates may cycle between the standby module and one or more processing modules. For example, such transport may take place along transport routes and/or transport loops. According to embodiments of the present disclosure, the substrates are transported while being supported by a carrier, for example, the substrates can be cycled while being supported by the carrier.

[0025] Additionally, a pre-vacuum module may be arranged between the atmospheric module and one or more processing modules. The standby module may include atmospheric conditions. For example, the air pressure in the load module may include atmospheric air pressure. Thus, particles such as, for example, O ₂ , H ₂ O, and N ₂ may be in the atmospheric module, or may generally be outside the vacuum chamber of one of the vacuum chambers. The pre-vacuum module can contain different pressure conditions compared to the atmospheric module. For example, the pre-vacuum chamber includes lower pressure conditions. The pressure in the pre-vacuum chamber may be less than 10 ^-1 mbar. The pre-vacuum chamber can be connected to one or more processing chambers. The processing chambers may contain different pressure conditions compared to the atmospheric module and/or pre-vacuum chamber. A load lock module may be arranged between the pre-vacuum chamber and the processing chambers. For example, the processing chamber can contain vacuum conditions.

Vacuum conditions as used herein include pressure conditions in the range of less than 10 ^-1 mbar or less than 10 ^-3 mbar, such as 10 ^-7 mbar to 10 ^-2 mbar. For example, the vacuum conditions in the load lock module can be switched between subatmospheric pressure conditions and atmospheric pressure conditions, for example in the range of 10 ^-1 mbar or less. To transfer the substrate into the high-vacuum module, the substrate can be inserted into a load lock module provided at atmospheric pressure, and the load lock module can be sealed, and subsequently, at a sub-atmospheric pressure in the range of less than 10 ^-1 mbar. Can be set. Subsequently, the opening between the load lock chamber and the high-vacuum module can be opened, and the substrate can be inserted into the high-vacuum module for transport into the processing module.

Additionally, vacuum conditions in the processing modules may include process pressure conditions of 10 ^-2 mbar or less, such as 10 ^-3 mbar to 10 ^-4 mbar. The base pressure conditions in the processing modules may range from 10 ^-7 mbar to 10 ^-6 mbar, specifically from 10 ^-7 mbar to 5*10 ^-6 mbar. Vacuum conditions can be applied through the use of vacuum pumps or other vacuum generating techniques.

[0028] In accordance with embodiments described herein, one or more processing modules or chambers hold one or more deposition sources 220. If there is more than one deposition source, the deposition sources may be arranged in a row. For example, the deposition sources are arranged side by side with each other. The deposition sources can extend vertically in length. In the vertical direction, multiple openings can be distributed. The openings can be in the form of nozzles. For example, the material to be deposited on the substrate can be sprayed onto the substrate through multiple openings, such as nozzles.

[0029] According to embodiments, one or more deposition sources may be rotatably fixed to the lowermost side of the processing module. In particular, 2 to 10 deposition sources may be in one or more processing chambers. More specifically, three to seven deposition sources may be in one or more processing chambers.

[0030] The change from process idle to processing cycles using new substrates can change gas levels or particle loading and desorption behavior in the processing system. According to embodiments of the present disclosure, the particle load may not be changed solely by particles that are attached to the substrates and enter the system. Adsorption of particles to additional process components such as carriers, for example, further increases the particle load. Components such as carriers are provided with a reduced particle load in a dedicated manner.

[0031] According to embodiments described herein, the processing system further comprises an apparatus 200 for thermal treatment. The device may be located in the processing system and/or near the processing system, such as in at least one or more of an atmospheric module, a load lock module, a high-vacuum module, and a transfer module, such as in a vacuum environment or in a non-vacuum environment. . Additionally or alternatively, the device may be located inside the processing system. The device may include one or more heating arrangements 240.

[0032] According to embodiments described herein, one or more substrates 230 may be transported by carrier 212 through substrate processing system 100. The carrier 212 may be transported through a transport arrangement in a processing system. The system may include a plurality of carriers 212 carrying a plurality of substrates 230. Each carrier 212 can carry one substrate. Multiple carriers can be carried simultaneously through the processing system.

[0033] 2A shows a front view of a carrier according to embodiments described herein.

[0034] According to the embodiments described herein, the carrier comprises one or more edge portions 214. The edge portions 214 extend outside the substrate receiving area. Additionally, the carrier 212 can carry the substrate 230. The substrate can be loaded on the carrier. In particular, the substrate may be loaded into the substrate receiving region 232. The substrate 230 may be attached to the carrier 212 through the holding arrangement 218. For example, the holding arrangement connects the carrier to the substrate. The holding arrangement may include mounting portions. The mounting portions may connect the carrier and the substrate. The holding arrangement can mechanically connect the substrate and the carrier. Additionally or alternatively, the holding arrangement can electrostatically connect the substrate to the carrier.

[0035] Additionally or alternatively and according to embodiments described herein, the carrier may comprise an electrostatic chuck (E-chuck) or may be an electrostatic chuck (E-chuck). The E-chuck may have a support surface for supporting the substrate 230 thereon. In one embodiment, the E-chuck includes a dielectric body with electrodes embedded therein. The dielectric body may comprise a dielectric material, preferably a high thermal conductivity dielectric material, such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina, or equivalent material. In some implementations, the dielectric body can be made of a polymeric material such as polyimide. The electrodes can be coupled to a power source that provides power to the electrodes to control the chucking force. The chucking force is an electrostatic force acting on the substrate 230 to fix the substrate 230 on the support surface.

[0036] In general, the E-chuck supports substantially the entire surface of the substrate 230, such as the second major surface or back. Since substantially the entire surface is attached to the defined support surface of the E-chuck, warping of the substrate 230 can be prevented. The substrate 230 may be supported more stably, and the process quality may be improved.

[0037] According to some embodiments, which may be combined with other embodiments described herein, the substrate 230 is a large area substrate. The large area substrate may have a size of at least 0.01 m ² , specifically at least 0.1 m ² , and more specifically at least 0.5 m ² . For example, a large area substrate or carrier is GEN 4.5 corresponding to about 0.67 m ² substrates (0.73 x 0.92 m), GEN 5 corresponding to about 1.4 m ² substrates (1.1 mx 1.3 m), about 4.29 m ² substrate GEN 7.5, corresponding to GEN 7.5 (1.95 mx 2.2 m), GEN 8.5 corresponding to about 5.7 m ² substrates (2.2 mx 2.5 m), or even GEN corresponding to about 8.7 m ² substrates (2.85 mx 3.05 m) May be 10. Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0038] One or more substrates may be oriented in a substantially vertical position. As used throughout the present disclosure, “substantially perpendicular” is understood to allow deviations from the vertical direction or orientation of less than or equal to ±20°, such as less than or equal to ±10°, especially when referring to substrate orientation. . This deviation can be attributed to, for example, a substrate support or carrier with a slight deviation from the vertical orientation can result in a more stable substrate position, or a downward-facing substrate orientation can even better reduce particles on the substrate during deposition. It can be provided because there is. However, the substrate orientation, for example during the layer deposition process, is considered to be substantially vertical, which is considered to be different from the horizontal substrate orientation, which may be considered horizontal by ±20° or less. For example, during the deposition process and/or transport, one or more substrates may be in a substantially vertical position.

[0039] For example, a deposition material may be transferred from a vertically arranged deposition source to a substantially vertically oriented substrate. The material to be deposited can be coated on the substrate.

[0040] Embodiments of the present disclosure relate to an apparatus 200 for thermally treating a carrier 212 in, for example, a processing system. The device includes a heating arrangement 240 configured to provide thermal energy to one or more edge portions 214 of the carrier. The carrier is configured to support a substrate in the substrate receiving area 232, and the carrier 212 has one or more edge portions 214 extending outside the substrate receiving area.

[0041] In accordance with the embodiments described herein, the swing module 172 may bring one or more substrates to a substantially vertical position. The swing module may additionally bring the substrate-carrier-arrangement 250 to a substantially vertical position. The swing module may include a rotatable shaft. The axis can be oriented horizontally. The swing module can be tiltable. For example, the swing module 172 may be substantially tiltable by about 90 degrees. The swing module can be oriented towards the load lock module 174. According to the embodiments described herein, the swing module 172 may include a swing element 173. The swing element can be a table on which the substrate carrier can be placed. Substrates can be loaded on the carrier 212. The swing element may be tiltable towards the load lock module. Thus, the swing module can move the carrier or substrate with the substrate from a non-vertical orientation (eg, horizontal) to a non-horizontal orientation (eg, vertical) and vice versa by an angle. The angle can be greater than or equal to 60° and less than or equal to 120°, such as about 90°.

[0042] The carrier 212 may include a carrier frame 216. The edge portions 214 can provide a frame surrounding the substrate receiving area 232. The carrier frame 216 may represent the outermost periphery of the carrier 212. The carrier frame 216 may at least partially surround the substrate receiving area 232. Alternatively, the carrier frame 216 may completely surround the substrate receiving area 232. For example, the width of the carrier frame may range from 10 mm to 500 mm. In particular, the width of the carrier frame may range from 50 mm to 400 mm. More specifically, the width of the carrier frame may range from 100 mm to 300 mm.

[0043] According to the embodiments described herein, an apparatus 200 for heat treatment may be further located on the carrier 212. For example, the carrier frame 216 may serve as an area for providing the heating arrangement 240 to the carrier. The possible locations of the apparatus 200 for heat treatment are further described with respect to FIGS. 3A-3D.

[0044] 2B shows a top view of a carrier carrying a substrate, according to embodiments described herein. The heating arrangement 240 can be arranged near the carrier. In particular, the heating arrangement may be arranged near the substrate-carrier-arrangement 250.

[0045] According to embodiments, the apparatus 200 for heat treatment may be arranged such that thermal energy reaches the carrier 212. One or more heating arrangements 240 may be configured to provide thermal energy to edge portions 214. For example, the heating arrangement 240 may be arranged at the entry sites of the modules. Additionally or alternatively, the heating arrangement can be integrated within the carrier 212.

The heating arrangement 240 may provide at least 1 kW/m ² of thermal energy. For example, the thermal energy provided by the heating arrangement is in the range of 4 kW/m ² to 100 kW/m ² , specifically 4 kW/m ² to 10 kW/m ² . For example, the carrier can be heated to a temperature of 120 °C. In particular, the carrier can be heated to a temperature of 100 °C, more specifically 80 °C. Additionally or alternatively, the carrier may be heated such that the heating of the carrier and the temperature around the carrier results in a temperature of the carrier of 100°C, specifically 80°C.

[0047] According to embodiments described herein, the heating arrangement 240 may provide radiant heating. The heating arrangement 240 may include one or more radiant heaters. Radiant heaters may extend to one or more edge portions 214. The radiant heater can be selected from the group consisting of UV lamps, IR lamps, resistive heaters, and combinations thereof. The heating arrangement can include resistive heating wires and/or magnetic materials.

[0048] The heating arrangement 240 may be configured to heat a region of a carrier different from the substrate receiving region. This carrier region may also be referred to as a heated carrier region 243. For example, the heating arrangement 240 is arranged such that the thermal energy reaches only an area different or essentially different from the substrate receiving area 232 of the carrier, that is, only the heating carrier area 243. The heated carrier area may be a carrier frame 216.

[0049] Heating of the substrate may be provided as a pre-treatment. However, a substrate having a glass (eg, made of glass) and having a thickness of 0.7 mm or less has a much smaller heat capacity as a solid carrier frame. Thus, the heating of the substrate as a pre-treatment is different (eg, lower power) compared to the heating of the carrier. One skilled in the art will recognize that thermal radiation intended to heat the substrate, ie, heat radiation within the substrate receiving area, may slightly overlap with areas outside the substrate receiving area. Similarly, thermal radiation intended to heat areas outside the substrate receiving area may slightly (slightly) overlap with the substrate receiving areas. However, as described above, one of ordinary skill in the art can distinguish between the two intents.

[0050] Advantageously, heating the carrier supports the desorption of particles from the carrier. Thus, impurities can be removed from the carrier. Carriers can be transported between different pressure conditions. One or more carriers of the system can be stopped in different modules and thus under different pressure conditions. During residence under atmospheric pressure conditions, particles can be adsorbed on the carrier. These particles are transported to subsequent modules with different pressure conditions. Subsequent transport interferes with the ongoing process, and accordingly, it must be settled before the process can continue. Thus, in order to accelerate the settlement of the process, it is advantageous to remove the particles from the carrier.

[0051] 3A-3D illustrate regions and carriers susceptible to heat treatment, according to embodiments described herein.

[0052] According to embodiments, heat treatment may be provided outside the heating carrier area. External heating should be understood as a heating arrangement located away from the heating carrier region 243. The heating arrangement can be arranged in the processing system. For example, the heating arrangement can be arranged on any side of the modules of the processing system.

[0053] 3A shows an example of radiant heating. Thermal energy can reach an area of the carrier that is different from the substrate receiving area. For example, the thermal energy of radiant heating can reach the heated carrier region 243 of the carrier. Additionally, the thermal energy of radiant heating can reach the carrier frame 216 of the carrier.

[0054] An additional way to provide radiant heating to the heating carrier region, exemplarily shown in FIG. 3B, may be provided by resistive heating. For example, dedicated resistive heaters can be used. Resistive heating is to be understood as an electric current passing through a conductor to produce heat. Such a resistive heater can be arranged near the carrier to be heated. For example, a resistive heater for radiant heating can be arranged at the inlet of the processing system. For example, the resistive heater can be located opposite the carrier frame.

[0055] According to embodiments, heat treatment may be provided inside the heating carrier area. Internal heating should be understood as a heating arrangement located in the heating carrier area. According to embodiments, the heating arrangement can be arranged on any side of the heating carrier area. For example, the heating arrangement can be arranged on the carrier frame 216.

[0056] 3C shows a further embodiment for providing heating to the heating carrier region. Resistive heating may additionally be provided to the carrier 212. Resistive heating can be provided by attaching a resistive heater to the carrier. For example, a resistive heating wire is attached to the carrier 212. The resistive heater can be arranged inside the carrier frame. For example, resistive heater wires may be arranged inside the heating carrier area, and resistive heater wires may be driven by current through contact pads. Illustratively, resistive heater wires may be arranged in the carrier frame 216.

[0057] 3D shows a further embodiment for providing heating to the heating carrier area. Induction heating may additionally be provided to the carrier. Inductive heating can be understood as heating by electromagnetic induction through the heat generated in the element to be heated by eddy currents. The heating arrangement 240 may be inductively coupled to the heating carrier region. For example, conductive wires can be arranged in the heating carrier region to provide inductive heating. For example, conductive wires may be arranged in the carrier frame 216.

[0058] Alternatively, a heating carrier region can be provided as a conductive heating carrier region. Current may be applied to the conductive heating carrier region to introduce inductive heating to the heating carrier region.

[0059] According to an embodiment, the heating arrangement may further include an energy source for providing energy to the heating arrangement. The energy source may include a power supply for providing a voltage to the heating arrangement. For example, the power supply may provide a voltage to the resistive heating wire. A power supply may also be included to inductively couple current to the magnetic material.

[0060] 4 shows a top view of a substrate processing system 100 in accordance with embodiments described herein.

[0061] According to the embodiments described herein, the substrate processing system 100 includes a standby module 170 including a swing module 172, load lock modules 174, one or more transfer modules 180, and one It may include the above processing modules 190. For example, one swing module 172 may be connected to the load lock module 174, and the load lock module 174 may be further connected to the pre-vacuum chamber 182. The pre-vacuum chamber can be connected to the high-vacuum chamber 184. The high-vacuum chamber can be connected to the processing chamber. The processing chamber can be connected to additional processing chambers. In general, the number of process chambers that can be subsequently arranged is between one and eight processing chambers, specifically between one and five processing chambers, and more specifically between one and eight processing chambers. It can be varied between the three processing chambers. The substrate processing system 100 may further include a transport arrangement 160.

[0062] According to the embodiments described herein, the heating arrangement 240 may be arranged at different sites in the substrate processing system 100. For example, the heating arrangement 240 may be arranged in the standby modules 170. For example, the heating arrangement may be located on the swing module 172.

[0063] According to the embodiments described herein, an apparatus 200 for heat treatment may be provided on one or more transfer modules 180. The apparatus 200 for heat treatment may be arranged in one or more transfer modules 180. The apparatus 200 for heat treatment or one or more heating arrangements 240 may be located in a pre-vacuum module or chamber. Heating in the pre-vacuum chamber can be carried out statically. Static heating should be understood as, for example, a heating arrangement fixed to the wall of the chamber. Static heating can also be understood as a heating arrangement attached and fixed to the wall of the chamber. Fixed heating may include stopping the carrier inside the chamber.

Advantageously, the particles can be removed at the beginning of the processing of the substrate. Thus, diffusion of particles into subsequent chambers is more effectively prevented. In addition, degassing of the carrier is promoted. Thus, improved process stability and performance can be achieved.

[0064] According to the embodiments described herein, depletion of residual particles or gas may be monitored by RGA (residual gas analysis) measurement. Monitoring and regulation of temperature can be carried out by means of a control system. For example, the control system can be a closed loop system. Measurements may be performed in one or more transfer modules 180 and/or one or more processing modules 190. For example, RGA can be performed in a pre-vacuum chamber and a processing chamber. RGA can be related to the regulation of heating. According to embodiments, a closed loop system for heating the carrier can be set up. For example, adjustment of the device 200 for heat treatment can be correlated with the results of the RGA. For example, when a high particle amount or a high residual gas amount is measured, the temperature of the apparatus for heat treatment may be increased.

[0065] According to the embodiments described herein, an apparatus 200 for heat treatment may be provided on a part of the wall of modules or chambers. The modules or chambers may comprise a top wall, four side walls, and/or a bottom wall. The device for heat treatment may be arranged on every respective wall of one or more transfer chambers and/or one or more atmospheric modules. The apparatus 200 for heat treatment may be arranged on at least some of the walls of the chamber. For example, the device 200 for heat treatment may be arranged in the upper section, the lower section, and/or the side section of the individual walls. The apparatus 200 for heat treatment may additionally cover the entire individual wall.

[0066] In accordance with embodiments described herein, the transport arrangement 160 may be configured to transport the carrier 212 past the apparatus 200 for heat treatment. For example, the transport paths 162 may be configured to provide a carrier to a site within the module where heating of the device for heat treatment may be applied to the carrier 212. For example, the carrier can be stopped opposite the heating arrangement 240.

[0067] According to the embodiments described herein, heating may be provided to the carrier 212 during movement of the carrier 212. The carrier can be transported between modules or chambers. For example, the carrier is transported between two transport modules. One of the transfer modules may be a pre-vacuum chamber, and the second transfer module may be a high-vacuum chamber. Heating can be provided to the carrier during transport of the carrier. The heating can be provided to the carrier frame as pulsed heating (ie, heating is subsequently turned on and off). For example, heating can be turned on and off depending on the position of the carrier and substrate. For example, by turning off the heating arrangement at certain positions of the carrier and/or the substrate, only the carrier can be heated without the substrate being heated.

[0068] According to embodiments that can be combined with any other embodiment described herein, the carrier may comprise a substrate-carrier-arrangement. The substrate may be loaded on the carrier. The substrate may be in the substrate receiving area of the carrier. In accordance with embodiments described herein, a substrate processing system may include a carrier that provides a substrate-carrier-arrangement. The system may include an apparatus 252 for first heat treatment. The apparatus 252 for first heat treatment may be configured to heat a first region of the substrate-carrier-arrangement. The system may further include an apparatus 254 for second heat treatment. The apparatus 254 for second heat treatment may be configured to heat a second region of the substrate-carrier-arrangement.

[0069] According to embodiments described herein, the device for first heat treatment 252 may provide lower power thermal energy than the device for second heat treatment 254. For example, less thermal energy is provided to the first region than to the second region of the substrate-carrier-arrangement.

[0070] According to the embodiments described herein, the first region of the substrate-carrier-arrangement may be a substrate receiving region of the substrate-carrier-arrangement. According to the embodiments described herein, the second region of the substrate-carrier-arrangement may be an edge portion of the carrier of the substrate-carrier-arrangement. For example, a first device for thermal treatment 252 may provide heating to the substrate receiving area, and a second device for thermal treatment 254 may provide heating to the edge portion and/or the carrier frame.

[0071] According to the embodiments described herein, the heating of the second region can be regulated by a closed loop system. For example, the closed loop system can be a closed loop system as described above. For example, the closed control system may include residual gas analysis (RGA).

[0072] In accordance with embodiments described herein, the substrate processing system may be configured to stop a process. For example, carriers are stopped in their current position. This may, for example, make it possible to load new substrate-carrier-arrangements into the processing system. Additionally, carriers or substrate-carrier-arrangements can be cycled through the substrate processing system. Then, the transport arrangement can be made in a loop configuration. For example, one continuous transport path is provided.

[0073] 5A and 5B show side views of a standby module 170 according to embodiments described herein. According to embodiments that can be combined with any other embodiment described herein, the standby module may include one or more swing modules. The swing module can bring the substrate to a substantially vertical position. The standby module may additionally provide one or more load lock modules or chambers. Carriers may be provided on the swing module 172. Carriers may include a substrate in the substrate receiving area.

[0074] According to the embodiments described herein, the standby module may provide an apparatus 200 for heat treatment. For example, the swing module 172 may provide an apparatus for heat treatment. Additionally or alternatively, one or more load lock modules 174 may provide an apparatus 200 for heat treatment. Thus, heating can be provided to the carrier in the standby module. The apparatus 200 for heat treatment may be configured to heat the carrier. The device 200 for heat treatment may be oriented such that thermal energy can reach the carrier. For example, the thermal energy reaches the carrier frame and/or the edge portions of the carrier.

[0075] Advantageously, adsorption of particles or gases in the carrier to the carriers at or near the processing module can be reduced. This can be achieved in an early stage of the process. Thus, fewer particles are transported into the processing system. Less particle or gas load on the carrier in the early stages of the process is advantageous because the process undergoes fewer fluctuations.

[0076] 6A and 6B show flow charts of a method according to embodiments described herein. The method can be performed by using the substrate processing system 100 according to the embodiments described herein.

[0077] According to embodiments that may be combined with any of the embodiments described herein, box 610 includes loading a substrate into a substrate receiving area on a carrier. The carrier and substrate may be a substrate-carrier-arrangement. The carrier loaded with the substrate may be disposed on the swing module. The swing module may be a swing module as described according to embodiments of the present application. The substrate-carrier-arrangement can be brought to a vertical position by means of a swing module.

[0078] According to embodiments that may be combined with any of the embodiments described herein, box 620 includes introducing a carrier into a substrate processing system. For example, a substrate-carrier-arrangement is introduced into a substrate processing system. The carrier and/or substrate-carrier-arrangement can be introduced vertically. The carrier may be connected to a transport arrangement as described in the embodiments herein. Thus, the carrier and/or substrate-carrier-arrangement can be transported through the substrate processing system. The substrate-carrier-arrangement can be introduced in a load lock module or chamber as described herein.

[0079] According to embodiments that may be combined with any of the embodiments described herein, box 630 includes heating a region of a carrier different from the substrate receiving region using an apparatus for thermal treatment. The area of the carrier different from the substrate receiving area may be a heated carrier area. Heating may be provided by a heating arrangement as described in the embodiments herein. An apparatus for heat treatment may comprise a heating arrangement as described herein.

[0080] In accordance with embodiments described herein, which may be combined with any other embodiment described herein, method 600 includes a plurality of substrates 230 that may be simultaneously transported through a substrate processing system on a plurality of carriers. ) Can be included. A substrate may be included in a plurality of substrates, and a carrier may be included in a plurality of carriers. Thus, one or more carriers and/or substrates may be transported simultaneously through the substrate processing system. Carriers can be transported via transport arrangements, for example transport paths through a substrate processing system. The transport arrangement can be configured as a loop.

[0081] According to embodiments described herein, the method may further comprise a transport cycle. Box 640 may include transporting at least one of the plurality of carriers to one or more standby modules. For example, at least one carrier is transported to the load lock module. Additionally or alternatively, the substrate-carrier-arrangement can be transported to the standby module.

[0082] In accordance with embodiments described herein, box 650 may include transporting at least one carrier from one or more standby modules to one or more transport modules. The transfer modules may be pre-vacuum modules or chambers and/or high-vacuum modules or chambers, as described in accordance with embodiments herein.

[0083] In accordance with embodiments described herein, box 660 may comprise transporting at least one carrier from one or more transport modules to one or more processing modules. For example, a carrier and/or substrate-carrier-arrangement may be transported to one or more processing modules. A deposition material may be delivered to one or more substrates in a processing module or chamber.

[0084] According to embodiments described herein, box 670 may include transporting at least one carrier back to one or more standby modules. The carrier can be carried on transport paths arranged in a loop configuration.

[0085] In accordance with embodiments described herein, box 680 may include stopping the substrate processing system. At least one carrier may be held in one or more standby modules. Carrier and/or substrate-carrier-arrangement and/or substrate may be removed from the substrate processing system. For example, processed substrates can be removed from the processing system. A new substrate can be loaded onto the carrier. In accordance with embodiments described herein, box 690 may include starting a substrate processing system. A plurality of carriers and/or carriers may be stopped at the standby module and/or the transfer module and/or the processing module.

[0086] According to embodiments described herein, the duration of one transport cycle may depend on the number of modules included in the processing system. For example, the duration of one cycle is about 10 minutes or less. In particular, the duration may be about 5 minutes. The duration of the loading of the carrier and/or substrate-carrier-arrangement may be 90 seconds. In particular, the duration of the loading may be 60 seconds.

[0087] According to embodiments described herein, which may be combined with any other embodiment described herein, at least one carrier may be heated between one or more standby modules and one or more processing modules. The carrier can be heated during transport from the standby module to the transfer module. Additionally or alternatively, the carrier can be heated during transport via the transport module. For example, the carrier can be heated during transport from the pre-vacuum module to the high-vacuum module. Heating may be provided by one or more devices for heat treatment as described in the embodiments herein.

[0088] In accordance with embodiments described herein that may be combined with embodiments described herein, method 600 may include, during transport of the carrier, heating a region of the carrier different from the substrate receiving region. The heating carrier area can be heated. For example, one or more devices for heat treatment are arranged such that the heating carrier region is heated. Additionally or alternatively, the edge portions of the carrier can be heated. Heating can occur during shutdown of the processing system.

[0089] Advantageously, particles that can be adsorbed on the carrier in atmospheric modules can be removed from the carrier. For example, such adsorption may occur more and more when the carrier is placed in the standby module, during shutdown of the processing system. Thus, degassing of the carrier can be ensured. Additionally, the efficiency of the process is improved. Additionally, the time between stopping and starting the process and the total particle load in the processing system are reduced.

[0090] According to embodiments described herein, method 600 may be performed during transport of a carrier from one or more standby modules to one or more transport modules, and/or from one or more transport modules to one or more processing modules. During transport of the carrier, it may further include heating a region of the carrier different from the substrate receiving region.

[0091] According to embodiments described herein, arrow 692 may indicate determining the gas load near the carrier, and arrow 694 indicates adjusting the device for heat treatment in determining the gas load. can do. Gas rod can be used synonymously with particle rod. The gas load may be determined through residual gas analysis (RGA) described with respect to embodiments of the present disclosure. The regulation of heating can be performed by a control system as described in the embodiments herein.

[0092] While the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is in the following claims. Determined by

Claims (27)

An apparatus 200 for thermally treating a carrier 212 in a processing system, comprising:
The carrier is configured to support the substrate 230 in the substrate receiving area 232,
The carrier 212 has one or more edge portions 214 extending out of the substrate receiving area 232,
The device 200,
Comprising a heating arrangement 240 configured to provide thermal energy to the one or more edge portions 214,
Apparatus for heat treatment of carriers in a processing system. The method of claim 1,
The one or more edge portions 214 provide a frame 216 surrounding the substrate receiving region 232,
Apparatus for heat treatment of carriers in a processing system. The method of claim 2,
The heating arrangement 240 is configured to provide thermal energy to the frame 216,
Apparatus for heat treatment of carriers in a processing system. The method according to any one of claims 1 to 3,
The heating arrangement 240,
Comprising one or more radiant heaters,
Apparatus for heat treatment of carriers in a processing system. The method of claim 4,
The one or more radiant heaters extend to the one or more edge portions 214,
Apparatus for heat treatment of carriers in a processing system. The method according to claim 4 or 5,
The one or more radiant heaters comprise one or more of the group comprising IR lamps, UV lamps, resistive heaters, and combinations thereof.
Apparatus for heat treatment of carriers in a processing system. The method according to any one of claims 1 to 6,
The heating arrangement 240,
Comprising resistive heating wire and/or magnetic material,
Apparatus for heat treatment of carriers in a processing system. The method of claim 7,
The resistive heating wire is attached to the carrier 212,
Apparatus for heat treatment of carriers in a processing system. The method of claim 8,
The heating arrangement 240 is integrated within the carrier 212,
Apparatus for heat treatment of carriers in a processing system. The method according to any one of claims 7 to 9,
The heating arrangement 240,
Including an energy source for providing energy to the heating arrangement 240,
Apparatus for heat treatment of carriers in a processing system. The method of claim 10,
The energy source comprises a power supply for providing a voltage to the resistive heating wire, or a power supply for inductively coupling a current to the magnetic material,
Apparatus for heat treatment of carriers in a processing system. The method according to any one of claims 1 to 11,
The heating arrangement 240 provides thermal energy of at least 1 kW/m ² ,
Apparatus for heat treatment of carriers in a processing system. A substrate processing system 100, comprising:
An apparatus (200) for heat treatment according to any one of the preceding claims, comprising
Substrate processing system. The method of claim 13,
The system further comprises a transport arrangement 160 configured to transport the carrier 212 past the device 200 for heat treatment.
Substrate processing system. The method of claim 13 or 14,
The system further comprises one or more transfer modules 180,
The apparatus 200 for heat treatment is provided in the one or more transfer modules 180,
Substrate processing system. The method according to any one of claims 13 to 15,
The system further comprises one or more atmospheric modules 170,
The apparatus 200 for heat treatment is provided in the one or more standby modules 170,
Substrate processing system. A substrate processing system 100 for processing a substrate 230 supported by a carrier 212, comprising:
A substrate-carrier-arrangement 250 is provided,
The substrate-carrier-arrangement 250,
A first heat treatment apparatus (252) configured to heat a first region of the substrate-carrier-arrangement (250); And
A second heat treatment device (254) configured to heat a second region of the substrate-carrier-arrangement (250)
Containing,
A substrate processing system for processing a substrate supported by a carrier. The method of claim 17,
The device for first heat treatment 252 provides a lower power of thermal energy than the device for second heat treatment 254,
A substrate processing system for processing a substrate supported by a carrier. The method of claim 17 or 18,
The first region is a substrate receiving region 232 of the substrate-carrier-arrangement 250,
A substrate processing system for processing a substrate supported by a carrier. The method according to any one of claims 17 to 19,
The second region is the edge portion 214 of the carrier 212 of the substrate-carrier-arrangement 250,
A substrate processing system for processing a substrate supported by a carrier. The method according to any one of claims 17 to 20,
The heating of the second zone is regulated by a closed loop control system,
A substrate processing system for processing a substrate supported by a carrier. The method of claim 21,
The closed control system comprises residual gas analysis,
A substrate processing system for processing a substrate supported by a carrier. A method 600 for processing a substrate 230, comprising:
Loading the substrate 230 onto the substrate receiving area 232 on the carrier 212;
Introducing the carrier (212) into a substrate processing system (100); And
Heating a region of the carrier different from the substrate receiving region 232 using an apparatus 200 for heat treatment
Containing,
A method for processing a substrate. The method of claim 23,
A plurality of substrates 230 are simultaneously transported through the substrate processing system 100 on a plurality of carriers 212,
The substrate 230 is included in the plurality of substrates 230, the carrier 212 is included in the plurality of carriers 212,
The above method,
Further includes a transport cycle,
The transport cycle,
Transporting at least one carrier (212) of the plurality of carriers (212) to one or more waiting modules (170);
Transporting the at least one carrier (212) from the one or more waiting modules (170) to one or more transport modules (180);
Transporting the at least one carrier (212) from the one or more transport modules (180) to one or more processing modules (190);
Transporting the at least one carrier (212) back to the one or more standby modules (170);
Stopping the substrate processing system 100, wherein the at least one carrier 212 is held in the one or more standby modules 170; And
Starting the substrate processing system 100
Including,
The at least one carrier 212 is heated between the one or more standby modules 170 and the one or more processing modules 190,
A method for processing a substrate. The method of claim 23 or 24,
Determining a gas load near the carrier; And
Upon determining the gas load, adjusting the device 200 for heat treatment.
Further comprising,
A method for processing a substrate. The method according to any one of claims 23 to 25,
During transport of the carrier 212, heating an area of the carrier 212 that is different from the substrate receiving area 232
A method for processing a substrate. The method according to any one of claims 23 to 26,
During transport of the carrier 212 from the one or more standby modules 170 to the one or more transport modules 180, and/or from the one or more transport modules 180, the one or more processing modules 190 During transport of the carrier 212 to ), heating an area of the carrier 212 that is different from the substrate receiving area 232
A method for processing a substrate.

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