KR20210012769A - Microwave chamber with rotating susceptor - Google Patents

Abstract

The present invention relates to a microwave chamber having a rotating susceptor which is provided with the rotating susceptor in the microwave chamber which heat-treats a processing surface of a substrate using microwaves. The microwave chamber having the rotating susceptor comprises: a chamber unit providing a processing space of a substrate; a substrate support unit provided inside the chamber unit to rotate the substrate while supporting the substrate; and a waveguide unit provided on a wall of the chamber unit to supply microwaves to the processing space. Accordingly, a uniform thin film can be formed by heat-treating the whole processing surface of the substrate evenly.

Description

Microwave chamber with rotating susceptor {MICROWAVE CHAMBER WITH ROTATING SUSCEPTOR}

The present invention relates to a microwave chamber having a rotating susceptor provided with a susceptor rotating in a microwave chamber for heat treatment on a processing surface of a substrate using microwaves.

Recently, as an apparatus for performing heat treatment on a semiconductor substrate, an apparatus using microwaves has been proposed. Heat treatment by microwave has advantages over conventional lamp heating or resistance heating substrate heat treatment apparatuses in that internal heating, local heating, and selective heating are possible.

Further, heating by microwave irradiation can be heat treated at a relatively low temperature compared to a conventional lamp heating method or resistance heating method.

However, since the microwave has a long wavelength of several tens of millimeters and is easy to form a standing wave in a processing container, there is a problem that the intensity of the electromagnetic field is distributed on the processing surface of the substrate, and the temperature is not uniform.

In the conventional Korean Patent Application Publication No. 10-2012-0117582, a susceptor supporting a bottom surface of a substrate and having a rotation shaft, a rail plate having a rail guiding the path of the susceptor rotation shaft, and a side surface of the susceptor The susceptor is described with respect to a susceptor in which the center of rotation moves along the rail, including a susceptor driving unit that makes contact with and rotates the susceptor rotation axis along the rail plate.

Korean Patent Publication No. 10-0380642 describes an epitaxial reactor, a susceptor, and a gas inlet system in which a susceptor in the form of a rotary disk loaded with a plurality of substrates rotates about a central axis.

Korean Patent Publication No. 10-1098314 discloses a plasma processing apparatus for moving at least one of the ring-shaped magnets so that the center of at least one of the ring-shaped magnets revolves around the center of the planar antenna.

However, in the conventional substrate processing apparatus, even if the susceptor rotates, the rotation axis of the susceptor is fixed, so that a thin film layer is excessively formed in the rotation center of the substrate, thereby forming an uneven thin film layer.

Therefore, there is a need for a device capable of forming a uniform thin film by evenly heat-treating the entire surface of the substrate.

An object of the present invention is to provide a microwave chamber having a rotating susceptor capable of forming a uniform thin film by evenly heat-treating the entire treatment surface of a substrate.

A microwave chamber having a rotating susceptor of the present invention for solving the above-described problems is a microwave chamber for heat-treating a processing surface of a substrate using microwaves, comprising: a chamber unit providing a processing space for the substrate; A substrate support part provided inside the chamber part to rotate while supporting the substrate; A waveguide unit provided on a wall of the chamber unit to supply microwaves to the processing space; Includes.

Preferably, the substrate support unit, in a state in which the substrate is supported, a susceptor revolving on a horizontal plane; And a susceptor driving means for rotating and driving the susceptor so that the susceptor revolves. Includes.

Preferably, the susceptor driving means rotates the susceptor along a predetermined trajectory on a plane parallel to the processing surface.

Preferably, the susceptor driving means comprises: a rotation driving member providing rotational driving force; A main vertical shaft provided to pass through the bottom wall of the chamber unit, receiving rotational driving force from the driving member and transmitting it to the susceptor, one side is connected to the main vertical shaft and disposed horizontally to rotate around the main vertical axis It consists of a horizontal arm and a driven vertical shaft connecting the other side of the rotating horizontal arm and the susceptor.

Preferably, the susceptor driving means is provided with a plurality.

Preferably, the substrate support part penetrates the susceptor so as to mount or detach the substrate on the susceptor, and a plurality of support pins for supporting the substrate, and the plurality of support pins are disposed in an upright state, and the A substrate support made of a support pin plate disposed under the susceptor; And a substrate support driving means for raising and lowering the substrate support. It includes more.

Preferably, a blade portion for flowing the microwave supplied to the processing space to the processing surface; It includes more.

According to the microwave chamber having a rotating susceptor of the present invention, a uniform thin film can be formed by revolving the susceptor on a horizontal surface to evenly heat-treat the entire processing surface of the substrate.

Further, according to the present invention, since the susceptor rotates along a certain orbit by the plurality of susceptor driving units, the susceptor can be stably rotated.

Further, according to the present invention, since microwaves are flowed toward the processing surface by the blades, the efficiency of heat treatment of the substrate by microwaves can be improved.

1 is a perspective view showing a microwave chamber of the present invention.
Figure 2 is a perspective view showing the interior of the microwave chamber of the present invention.
Figure 3 is a perspective view showing the substrate support of the present invention.
Figure 4 is an exploded view showing the substrate support of the present invention.
5 is a perspective view showing a part of a reaction plate constituting the present invention.
Figure 6 (a) is a perspective view showing a protruding piece located in the central portion of the reaction plate constituting the present invention, (b) is a perspective view showing the protruding piece positioned at the edge of the reaction plate constituting the present invention.
7 is a perspective view showing a susceptor driving means of the present invention.
8 is a front view showing a state in which the substrate support of the present invention is elevated.
9 is a front view showing a state in which the substrate support of the present invention is lowered.
10 is a front view showing the microwave chamber of the present invention.
11 is a perspective view showing a waveguide part of the present invention.
12 is a plan view showing the microwave chamber of the present invention.
13 is a rear view showing the microwave chamber of the present invention.
14 is a plan view showing a microwave chamber according to another embodiment of the present invention.
15 is a perspective view showing a waveguide unit according to another embodiment of the present invention.
16 is a view showing a microwave outlet of the present invention.
Figure 17 (a) is a perspective view showing the blade portion of the first embodiment, (b) is a schematic view showing the blade plate and the rotation shaft of the first embodiment.
Figure 18 (a) is a perspective view showing a blade portion of the second embodiment, (b) is a schematic view showing a blade plate and a rotation shaft of the second embodiment.
Figure 19 (a) is a perspective view showing the blade portion of the third embodiment, (b) is a schematic view showing the blade plate and the rotation shaft of the third embodiment.
Figure 20 (a) is a perspective view showing the blade portion of the fourth embodiment, (b) is a schematic view showing the blade plate and the rotation shaft of the fourth embodiment.
Figure 21 (a) is a perspective view showing a blade portion of the fifth embodiment, (b) is a schematic view showing the blade plate and the rotation shaft of the fifth embodiment.
Figure 22 (a) is a perspective view showing the blade portion of the sixth embodiment, (b) is a schematic view showing the blade plate and the rotation shaft of the sixth embodiment.
23 is a view showing the arrangement of the blade unit according to the first embodiment of the present invention.
24 is a view showing the arrangement of the blade unit according to the second embodiment of the present invention.
25 is a view showing the arrangement of the blade unit according to the third embodiment of the present invention.
26 is a view as viewed from above of the arrangement of the upper wall blades of the present invention.
27 is a view as viewed from above of the arrangement of the temperature measuring unit and the temperature control unit of the present invention.
Fig. 28 is a schematic diagram showing a state in which the substrate support according to the present invention is raised and lowered.
29 is a schematic diagram showing a path of microwaves supplied by a temperature controller in a state in which the substrate support of the present invention is lowered.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The microwave chamber having a blade of the present invention can be divided into various embodiments, and the components of each embodiment are basically the same, but there are differences in some configurations. In addition, among the various embodiments of the present invention, the same reference numerals are used for components having the same function and function. The microwave chamber having a blade according to the present invention relates to a microwave chamber for heat treatment on a processing surface of a substrate using microwaves.

In the microwave chamber having a blade according to an embodiment of the present invention, as shown in Figs. 1 and 2, the chamber unit 100, the substrate support unit 200, the waveguide unit 300, and the blade unit 400 Done.

<Chamber part>

The chamber unit 100 is a space member that provides a processing space in which a substrate is loaded and a substrate is processed, and a substrate entrance 110 through which the substrate enters and exits is formed on the front surface of the space member.

While the substrate is heat-treated, the air pressure inside the chamber unit 100 is preferably 500 mmHg to 800 mmHg.

<Substrate support>

The substrate support part 200 is provided inside the chamber part 100 to support the substrate and rotates while supporting the substrate.

The substrate support 200 includes a substrate support 210, a substrate support driving means 220, a susceptor 230, and a susceptor driving means 240, as shown in FIGS. 3 to 7.

The substrate support 210 is elevated and lowered to mount or detach the substrate on the susceptor 230, and includes a support pin 211 and a support pin plate 212.

The support pin 211 passes through the susceptor 230, is arranged in a state in which a plurality of the support pins 212 are erected, and moves up and down together with the support pin plate 212 and is supported to mount or detach the substrate on the susceptor 230 Is done.

The support pin plate 212 is disposed under the susceptor 230, and a plurality of support pins 211 is disposed on an upper surface in a state in which it is standing. The support pin plate 212 is formed with a plurality of plate holes 212a penetrating the top and bottom so that the susceptor driving means 240 penetrates the support pin plate 212 through the plate hole 212a.

The substrate support driving means 220 is a driving means for elevating the substrate support 210, and a cylinder for elevating the support shaft 221 and the support shaft 221 coupled to the lower portion of the support pin plate 212, and It can be made with the same driving source.

The susceptor 230 includes a reaction plate 231, a protrusion piece 232, and a reaction plate frame 233, supports the substrate while the substrate is heat treated, and revolves on a horizontal plane.

A substrate is mounted on the reaction plate 231 and converts microwaves into thermal energy.

The reaction plate 231 is divided into a plurality of piece plates, and a clearance may be formed between each piece plate, and as shown in FIG. 4, the clearance gap (a+b+c) of the entire reaction plate 231 It is preferable that it is 2 mm or less.

As shown in FIG. 5, the edge portion of the upper surface of the reaction plate 231 has a stepped step 231a protruding upward. The stepped 231a prevents the substrate from slipping when the substrate is mounted on the reaction plate 231.

A plurality of protruding pieces 232 are provided on the upper part of the reaction plate frame 233 and support the rims of each of the engraving plates of the reaction plate 231.

As shown in (a) of FIG. 6, of the plurality of protruding pieces 232, the protruding piece 232 supporting the inner side of the reaction plate 231 has a flat top surface to support two or more engraving plates, As shown in (b) of FIG. 6, of the plurality of protruding pieces 232, the protruding piece 232 supporting the rim of the reaction plate 231 has a protruding jaw 232a formed on the upper surface of the reaction plate 231. Prevents slipping.

The reaction plate frame 233 supports a plurality of protruding pieces 232 thereon. The reaction plate frame 233 is formed in a lattice frame shape so as to support the plurality of protruding pieces 232. This can maximize the exposure of the lower surface of the reaction plate 231 through the space between the grid frames to maximize the microwave reaching the reaction plate 231.

In addition, the protruding piece 232 and the reaction plate frame 233 are made of transparent quartz material, so that microwaves pass through the protruding piece 232 and the reaction plate frame 233 so that more microwaves can reach the reaction plate 231. have.

When the microwave reaching the reaction plate 231 increases, the heat energy converted by the reaction plate 231 increases, so that energy efficiency can be increased.

The susceptor driving means 240 rotates the susceptor so that the susceptor 230 rotates. The susceptor driving means 240 is to rotate the susceptor 230 along a predetermined orbit on a plane parallel to the processing surface, and a rotation driving member, a main vertical shaft 241, a horizontal rotation arm 242, and a driven vertical shaft 243 ).

The rotation driving member is a driving source that provides rotational driving force to the main vertical shaft 241 and may be composed of a servo motor, a step motor, or the like.

The main vertical shaft 241 is vertically disposed so as to penetrate the bottom wall of the chamber unit 100, and the lower end is connected to the rotation driving member to receive rotational driving force and transmit it to the susceptor 230.

The rotating horizontal arm 242 is disposed horizontally, and one side is connected to the main vertical shaft 241 by a hinge to rotate around the main vertical shaft 241.

The driven vertical shaft 243 is hinge-connected to the other side of the rotating horizontal arm 242 in a standing state, and is rotatable on the rotating horizontal arm 242, and a susceptor is supported on the upper end and connected to be rotatable.

The main vertical shaft 241, the rotating horizontal arm 242, and the driven vertical shaft 243 are formed in the same shape as the crankshaft, and may be formed integrally.

The susceptor driving means 240 rotates the susceptor 230 during the heat treatment of the substrate, thereby improving heating uniformity and heating efficiency of the substrate.

Meanwhile, a plurality of susceptor driving means 240 may be provided to support the susceptor 230 more stably while maintaining the revolution of the susceptor 230.

The susceptor 230 orbits along a certain trajectory drawn by the driven vertical shaft 243 through the rotation of the rotating horizontal arm 242 by the rotational driving force. That is, a circle having the distance between the main vertical axis 241 and the driven vertical axis 243 as a radius becomes the orbit of the susceptor 230.

Although not shown in the drawings, the length of the rotating horizontal arm may be variable. This is to adjust the revolving radius of the susceptor according to the size of the substrate. For example, if the size of the substrate is large, the length of the rotating horizontal arm is increased to make the susceptor revolve largely, and if the size of the substrate is small, the length of the rotating horizontal arm is shortened to make the susceptor revolve small. Accordingly, it is possible to adjust the revolving radius of the susceptor appropriately for substrates of various sizes.

Hereinafter, driving of the substrate support will be described in detail.

First, as shown in FIG. 8, the substrate W is seated on the support pin 211 while the substrate support 210 is elevated. At this time, the support pin 211 penetrates the susceptor 230 so that the upper end of the support pin 211 is positioned higher than the susceptor 230.

Next, as shown in FIG. 9, the substrate support 210 is lowered while the substrate is seated on the substrate support 210. At this time, the substrate W that has been seated on the support pin 211 is seated on the susceptor 230, and the upper end of the support pin 211 is positioned under the susceptor. While the substrate W is heat treated while seated on the susceptor 230, the susceptor 230 revolves by the susceptor driving means 240.

Thereafter, when the heat treatment is finished, the substrate support 210 is raised and lowered again so that the support pin 211 removes and supports the substrate W from the susceptor 230.

Accordingly, the support pin 211 of the substrate support 210 penetrates the susceptor 230 and the substrate W is mounted and detached on the upper portion of the susceptor 230, while the susceptor 230 is Do not interfere with the revolution.

<waveguide part>

As shown in FIGS. 10 to 16, the waveguide unit 300 is provided in an inclined state on the wall of the chamber unit 100 to supply microwaves to the processing space. At this time, the microwave is supplied in a direction inclined with respect to the treatment surface.

The waveguide unit 300 may be divided into an upper waveguide for supplying microwaves downward toward an upper processing surface of the substrate W and a lower waveguide supplying microwaves upward toward a lower processing surface of the substrate W.

As shown in FIG. 10, the upper waveguide and the lower waveguide preferably have an inclination angle θ ₁ of 10° to 60° with the processing surface. More preferably, it may be formed to have an inclination angle (θ ₁ ) of 15° to 45°.

The waveguide part 300 is a first flange 301, a first pipe 302, a curved pipe 303, a second pipe 304, a second flange 305, a bracket 306, as shown in FIG. ) Can be made.

The first flange 301 is a connecting member for connecting the first pipe 302 to the source side of the microwave.

The first pipe 302 is a straight pipe provided at the front end of the curved pipe 303.

The curved pipe 303 is a curved pipe disposed between the first pipe 302 and the second pipe 304, and an inlet through which microwaves are introduced is formed toward the rear of the chamber unit 100.

The second pipe 304 is a straight pipe provided at the rear end of the curved pipe 303.

The second flange 305 is a connecting member for connecting the second pipe 304 to the bracket 306.

The bracket 306 is disposed on the outer surface of the chamber unit 100, and one side thereof is formed to be inclined, so that the second pipe 304 is inclinedly coupled to the chamber unit 100.

Specifically, one side of the bracket 306 is a surface in contact with the second flange 305, and the other side of the bracket 306 is a surface in contact with the outer surface of the chamber unit 100. One side and the other side of the bracket 306 have a constant inclination angle, from which the first inclination angle θ ₁ between the above-described processing surface and the waveguide is determined equally.

On the other hand, the microwave outlet 307 formed on the sidewall of the space member of the chamber unit 100 so as to discharge microwaves into the chamber unit 100 through the waveguide unit 300 may be formed in a rectangular shape as shown in FIG. And, it is preferable that the length ratio of the horizontal side (x) and the vertical side (y) is 5:4 to 2:1, more preferably 4:3. The ratio of the horizontal side and the vertical side may be equally applied to the cross section of the first pipe, the curved pipe, and the second pipe.

In the waveguide part 300, an upper waveguide and a lower waveguide may be variously disposed.

For example, the upper waveguide may be provided on one side of the chamber unit 100, and the lower waveguide may be provided on the other side of the chamber unit 100.

As another example, as shown in FIGS. 12 and 13, the upper waveguides 311 and 312 and the lower waveguides 321 and 322 may be provided on both sides of the chamber unit 100. A plurality of front and rear directions may be installed.

As another example, at least one of the upper waveguide and the lower waveguide may be formed to have a constant second inclination angle θ ₂ by forming an inclined front and rear direction of the chamber unit 100. As shown in FIG. 14, the upper waveguides 311a and 312a disposed in the front are inclined forward to supply microwaves toward the rear of the processing space, and the upper waveguides 311b and 312b disposed at the rear are It can be formed inclined to the rear so as to supply microwaves toward the front. The lower waveguide may also be disposed like the upper waveguide.

Meanwhile, as shown in FIG. 15, the upper waveguide and the lower waveguide may be installed only with the curved pipe 303 with the first pipe and the second pipe removed.

In the upper and lower waveguides, the inlet port is formed toward the rear of the chamber unit 100 by a curved tube, so that the microwave supply source disposed behind the chamber unit 100 and the upper and lower waveguides can be easily connected. Can be easily supplied. Accordingly, since the connection portion between the upper and lower waveguides and the microwave supply source occupies a minimum space on the side of the chamber unit 100, space efficiency can be improved.

As shown in FIG. 12, when the upper and lower waveguides are spaced apart from each other in the front and rear direction of the chamber unit 100, the second tube of the front waveguide is formed longer than the second tube of the waveguide disposed at the rear. , As shown in FIG. 13, the inlet ports of the waveguides disposed in front and rear may be disposed so as not to overlap the front-rear plane.

Since the waveguide unit 300 inclinedly supplies microwaves to the processing space, microwaves are evenly supplied to the upper and lower surfaces of the substrate, so that the upper and lower surfaces of the substrate may be evenly heat treated.

In addition, since the waveguide is installed on the wall of the chamber, energy efficiency can be improved by improving the activity of microwaves, and the defect rate of the substrate can be reduced by removing particles in the processing space.

<Blade part>

The blade unit 400 is provided on the wall of the chamber unit 100 to flow the microwave supplied from the waveguide unit 300 toward the processing surface of the substrate.

The blade part 400 is composed of a blade 401, a rotation shaft 402, a fixing piece 403, and a driving member 403, as shown in FIGS. 17 to 22.

The wing 401 is provided inside the chamber 100 and rotates around the rotation shaft 402. The blade 401 is made of a blade plate 401a formed in a plate shape disposed on the blade shaft a in a direction perpendicular to the rotation shaft 402.

The rotation shaft 402 passes through the wall of the chamber unit 100, one side is coupled to the center of the wing 401, and the other side is exposed to the outside of the chamber unit 100. The rotation shaft 402 receives rotational force from the driving member 204 and rotates together with the blades 401.

The fixing piece 403 is provided between the wall of the chamber unit 100 through which the rotation shaft 402 passes and the rotation shaft 402, and supports the rotation shaft 402 so that the rotation shaft 402 can rotate with respect to the chamber unit 100 Is done.

The driving member 404 is connected to the other side of the rotation shaft 402 exposed to the outside of the chamber unit 100 to provide rotational force to the rotation shaft 402. It is preferable that the driving member 404 is disposed in a fixed state to the chamber unit 100.

Hereinafter, embodiments of the variously formed wings 401 will be described. For convenience of explanation, the axis in the direction perpendicular to the rotation shaft 402 is referred to as a blade shaft (a), and the angle between the plate-shaped blade plate 401a and the rotation shaft 402 disposed on the blade shaft (a) is It is expressed as θ ₃ . 17 to 22 (a) is a perspective view showing a blade portion, and (b) is a schematic diagram showing an angle θ ₃ between the blade plate 401a and the rotation shaft 402.

As shown in Fig. 17, the wing 401 of the first embodiment is composed of four wing plates 401a. The angle θ ₃ between the blade plate 401a and the rotation shaft 402 is 90°, and the blade 401 is formed point-symmetrically around a point on the rotation shaft 402.

As shown in Fig. 18, the wing 401 of the second embodiment is made of four wing plates (401a). The angle θ ₃ between the blade plate 401a and the rotation shaft 402 is 0°, and the blade 401 is formed point-symmetrically around a point on the rotation shaft 402.

As shown in Fig. 19, the blade 401 of the third embodiment is made of four blade plates (401a). The angle θ ₃ between the blade plate 401a and the rotation shaft 402 is 45°, and the blade 401 is formed point-symmetrically around a point on the rotation shaft 402.

As shown in Fig. 20, the blade 401 of the fourth embodiment is made of four blade plates (401a). The wing plate 401a is formed so that both ends are twisted around the wing shaft (a). One end of the blade plate 401a in contact with the rotation shaft 402 has an angle of 0° with the rotation shaft 402, and the other end of the blade plate 401a has an angle θ ₃ with the rotation shaft 402 of 45°. That is, the difference in angle between one end and the other end of the blade plate 401a and the rotation shaft 402 is 45°. Preferably, the difference of the angle θ ₃ between one end and the other end of the blade plate 401a with respect to the rotation shaft 402 may be 0° to 90°. The blades 401 are point-symmetrically formed around a point on the rotation shaft 402.

As shown in Fig. 21, the wing 401 of the fifth embodiment consists of four wing plates 401a. The wing plate 401a is formed by bending the wing shaft (a). The wing plate 401a refers to a portion close to the center of the chamber part 100 at the tip of the wing plate 401a, and a portion close to the wall surface of the chamber part 100 of the wing plate 401a. When divided into the rear end, the angle θ ₄ between the front end and the rear end of the wing plate 401a is preferably 90° to 180°. In this case, the angle between the tip portion of the blade plate 401a and the rotation shaft 402 may be 0°. In addition, the length of the rear end portion of the wing plate 401a may be formed longer than the front end portion, the length of the front end portion and the rear end portion may be the same, or the front end portion may be formed longer than the front end portion. The wing plate 401a may be formed to be curved based on the wing shaft (a).

As shown in Fig. 22, the blade 401 of the sixth embodiment is made of two blade plates (401a). The angle θ ₃ between the blade plate 401a and the rotation shaft 402 is 45°, and the blade 401 is formed point-symmetrically around a point on the rotation shaft 402. The other end of the wing plate 401a is formed to be round.

The shape of the wing plate 401a may be formed in various shapes such as a square, a triangle, a circle, a streamline, and a fan.

Hereinafter, an embodiment of the blade unit 400 disposed in various ways will be described.

First, the blade unit 400, as shown in FIG. 23, is provided at a central portion of the wall of the chamber unit 100 in which the outlet 307 of the waveguide unit 300 is formed.

Second, the blade part 400 is provided between two adjacent outlets among the plurality of outlets 307, as shown in FIG. 24.

Third, a plurality of blade units 400 are provided on at least one of a sidewall and an upper wall of the chamber unit 100. As shown in FIGS. 25 and 26, a sidewall blade part 410 disposed on a sidewall of the chamber part 100 and four upper wall blades 420 disposed on an upper wall of the chamber part 100 may be formed.

Since the microwave has a linearity, the flow path of the microwave supplied to the processing space is limited. By providing the blade part 400 to variously deform the flow path of the microwave, the microwave may reach the entire processing space. This makes the microwaves reaching the susceptor 230 uniform, and improves the heat conversion efficiency of the microwaves. In addition, it is possible to prevent particles from falling onto the substrate as the momentum of the microwave is improved.

The present invention may further include a control unit including a temperature measuring unit 500 and a temperature adjusting unit 600 as shown in FIGS. 27 to 29.

The temperature measuring unit 500 is a temperature sensor provided above the chamber unit 100, and the temperature sensor is provided for each area divided in a horizontal direction on the processing surface of the substrate W to measure the temperature of each area.

The temperature controller 600 is a microwave supply means for individually supplying microwaves for each section, and may control a temperature for each section by controlling a degree of microwave supply for each section.

When a temperature deviation occurs in the temperature value measured by the temperature measuring unit 500, the controller uniformly controls the temperature of the entire region with respect to the entire surface of the substrate by controlling the degree of microwave supply of the microwave supply means for each region.

Specifically, the microwave supply means in the region where the temperature is measured is lower supply more microwaves than the microwave supply means in the region where the temperature is measured to be higher, thereby reducing the temperature deviation of the entire region.

For example, when the temperature of the central region of the substrate W is measured to be higher than that of other regions, the degree of microwave supply of the microwave supply means located in the central region is reduced, or the degree of microwave supply of the microwave supply means located in the other region is increased, It reduces the temperature difference between the central zone and other zones.

Accordingly, it is possible to uniformly control the temperature over the entire area of the substrate W.

In the above, specific embodiments of the present invention have been described with reference to the drawings, but it will be apparent that the scope of the present invention extends to modifications or equivalents based on the technical idea described in the claims.

100: chamber part
200: substrate support
210: substrate support
220: substrate support driving means
230: susceptor
240: susceptor driving means
300: waveguide part
400: blade part
500: temperature measurement unit
600: temperature control unit

Claims (7)

As a microwave chamber for heat treatment on a processing surface of a substrate using microwaves,
A chamber unit providing a processing space for the substrate;
A substrate support part provided inside the chamber part to rotate while supporting the substrate;
A waveguide unit provided on a wall of the chamber unit to supply microwaves to the processing space; Microwave chamber having a rotating susceptor, characterized in that it comprises a. The method according to claim 1,
The substrate support,
A susceptor orbiting on a horizontal plane while the substrate is supported; And
A susceptor driving means for rotating and driving the susceptor so that the susceptor revolves; Microwave chamber having a rotating susceptor, characterized in that it comprises a. The method according to claim 2,
The susceptor driving means rotates the susceptor along a predetermined trajectory on a plane parallel to the processing surface. The method according to claim 2,
The susceptor driving means,
A rotation driving member providing rotational driving force;
A main vertical shaft provided to pass through the bottom wall of the chamber unit and receiving rotational driving force from the driving member and transmitting it to the susceptor;
A rotating horizontal arm having one side connected to the main vertical axis and disposed horizontally to rotate around the main vertical axis; and
Microwave chamber with a rotating susceptor, characterized in that consisting of a driven vertical shaft connecting the other side of the rotating horizontal arm and the susceptor. The method of claim 4,
The susceptor driving means is a microwave chamber having a rotating susceptor, characterized in that provided with a plurality. The method according to claim 2,
The substrate support,
A plurality of support pins penetrating the susceptor and supporting the substrate so as to mount or detach the substrate on the susceptor, and a support pin disposed in an upright state and disposed under the susceptor A substrate support made of a plate; And
A substrate support driving means for raising and lowering the substrate support; Microwave chamber having a rotating susceptor, characterized in that it further comprises. The method according to claim 1,
A blade unit for flowing the microwave supplied to the processing space to the processing surface; Microwave chamber, characterized in that it further comprises.

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