KR20200082444A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

Disclosed are an epoxy resin composition for semiconductor device encapsulation comprising an epoxy resin, a curing agent, an inorganic filler, an acrylic polymer, and a vinyl group-terminated silane-based compound, and a semiconductor device encapsulated using the same.

Description

EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME}

The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed using the same, and more specifically, it has excellent compatibility and no appearance defects, and synergy in simultaneously reducing the linear expansion coefficient and modulus. The present invention relates to an epoxy resin composition for sealing semiconductor devices capable of significantly improving warpage and a semiconductor device sealed using the same.

As a method for packaging semiconductor elements such as IC and LSI and obtaining a semiconductor device, transfer molding of an epoxy resin composition is widely used in that it is suitable for low cost and mass production. Improvement of the properties and reliability of the semiconductor device can be achieved by improving the epoxy resin or the curing agent, phenol resin.

However, with the trend of miniaturization, light weight, and high performance of electronic devices these days, high integration of semiconductors is also accelerating every year. In addition, as the demand for surface mounting of semiconductor devices increases, there are problems that cannot be solved with a conventional epoxy resin composition. It requires low shrinkage and low elasticity properties to improve the problem of chip breakage and defects caused by high elasticity cured products, and problems caused by thermal expansion and thermal warping of the package between the substrate and the composition. have.

In a package in which only one surface on a substrate is sealed with a resin composition, a method of reducing cured shrinkage of the resin composition is known as a method of reducing warpage. Typically, the ratio of the inorganic filler is increased to reduce the coefficient of linear expansion according to temperature, or a method of increasing the ratio of a section having a low thermal expansion coefficient by using a resin having a high glass transition temperature (Tg).

However, problems to be solved also appear in the resin composition. When the proportion of the inorganic filler increases, the fluidity and formability are liable to decrease, the reliability of the semiconductor package decreases by increasing the elastic modulus, and when the resin composition having a high Tg is used to reduce the curing shrinkage, the elastic modulus generally increases significantly. Therefore, it becomes vulnerable to external stress caused by heat or shock. In addition, due to the lack of compatibility of the additives and the high melting point characteristics, a phenomenon that may be ejected during the manufacturing process may occur, and a defect in which white foreign substances appear in the cross section during molding may occur.

The object of the present invention It is to provide an epoxy resin composition for sealing a semiconductor device capable of improving warpage without improving appearance by improving compatibility.

Another object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device capable of improving warpage by simultaneously lowering a coefficient of linear expansion and an elastic modulus.

Another object of the present invention is to provide a semiconductor device sealed with the above epoxy resin composition.

1. According to one aspect, an epoxy resin composition for sealing a semiconductor device including an epoxy resin, a curing agent, an inorganic filler, an acrylic polymer, and a vinyl group terminal silane compound is provided.

2. In the above 1, the acrylic polymer may include polymethyl acrylate.

3. In 1 or 2, the vinyl group terminal silane-based compound may be represented by the following Chemical Formula 1 or Chemical Formula 2:

<Formula 1>

<Formula 2>

In Formula 1 and 2,

L ₁ and L ₂ are each independently a substituted or unsubstituted C ₁ -C ₁₀ alkylene group, a substituted or unsubstituted C ₃ -C ₁₀ cycloalkylene group, and a substituted or unsubstituted C ₆ -C ₃₀ arylene group. Is selected from

a1 is an integer selected from 0 to 10,

a2 is an integer selected from 1 to 10,

R ₁ to R ₇ are each independently selected from hydrogen and a C ₁ -C ₁₀ alkyl group.

4. In the above 3, L ₁ and L ₂ are each independently selected from methylene group, ethylene group, propylene group, butylene group and pentylene group,

a1 is an integer selected from 0 to 5,

a2 is an integer selected from 1 to 5,

R ₁ to R ₇ may be each independently selected from hydrogen, methyl group, ethyl group, propyl group and butyl group.

5. In any one of 1 to 4, the vinyl group terminal silane-based compound may include 3-acryloxypropyl trimethoxysilane.

6. In any one of 1 to 5 above, the epoxy resin composition for sealing a semiconductor device, 0.5 to 20% by weight of the epoxy resin;

0.1 to 13% by weight of the curing agent;

70 to 95% by weight of the inorganic filler;

0.1 to 5% by weight of the acrylic polymer, and

The vinyl-based terminal silane-based compound may contain 0.01 to 5% by weight.

7. According to another aspect, a semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of 1 to 6 is provided.

The present invention It has an effect of providing an epoxy resin composition for sealing a semiconductor device capable of improving warpage by simultaneously improving the compatibility, and having no defect in appearance, and improving the warpage by simultaneously lowering the linear expansion coefficient and the elastic modulus.

In the present specification, a singular expression includes a plural expression unless the context clearly indicates otherwise.

Terms such as include or have in the present specification mean that a feature or component described in the specification exists, and does not exclude the possibility of adding one or more other features or components in advance.

In the present specification, "a to b" in "a to b" representing a numerical range are defined as a or more and b or less.

C ₁ -C ₁₀ alkyl group used herein refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 10 carbon atoms, and specific examples include methyl group, ethyl group, propyl group, iso-propyl group, and iso-butyl Group, sec-butyl group, ter-butyl group, pentyl group, iso-amyl group, hexyl group, and the like. C ₁ -C ₁₀ alkylene group used herein refers to a divalent group having the same structure as the C ₁ -C ₁₀ alkyl group.

The C ₃ -C ₁₀ cycloalkylene group used herein refers to a divalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and specific examples thereof include a cyclopropylene group, a cyclobutylene group, and a cyclopentylene group.

C ₆ -C ₃₀ arylene group used herein refers to a divalent group having a carbocyclic aromatic system having 6 to 30 carbon atoms, and specific examples of the C ₆ -C ₃₀ arylene group include a phenylene group, a naphthylene group, and anthra. And selenylene groups.

At least one of the substituents of the substituted C ₁ -C ₁₀ alkylene group, the substituted C ₃ -C ₁₀ cycloalkylene group, and the substituted C ₆ -C ₃₀ arylene group in the present specification is -F, -Cl, -Br, -I , C ₁ -C ₁₀ alkylene group, C ₃ -C ₁₀ cycloalkylene group and C ₆ -C ₃₀ arylene group.

According to an aspect, the epoxy resin composition for sealing a semiconductor device may include an epoxy resin, a curing agent, an inorganic filler, an acrylic polymer, and a vinyl-based terminal silane compound.

Hereinafter, each component of the epoxy resin composition for sealing a semiconductor device will be described in more detail.

Epoxy resin

As the epoxy resin, epoxy resins commonly used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, the epoxy resin may be used an epoxy compound containing two or more epoxy groups in the molecule. For example, the epoxy resin is an epoxy resin obtained by epoxidizing a condensation product of phenol or alkyl phenols with hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a polyfunctional type epoxy Resin, naphthol novolac type epoxy resin, bisphenol A/bisphenol F/bisphenol AD novolac type epoxy resin, bisphenol A/bisphenol F/bisphenol AD glycidyl ether, bishydroxybiphenyl epoxy resin, dicyclopenta And diene-based epoxy resins and biphenyl-type epoxy resins. According to one embodiment, the epoxy resin may be a cresol novolak-type epoxy resin and/or a polyfunctional epoxy resin, but is not limited thereto.

The epoxy resin may be an epoxy resin having an epoxy equivalent of 100 to 500 g/eq when considering curability. In the above range, the degree of curing can be increased.

Epoxy resins can be used alone or in combination, and the epoxy resin is made in a compound form by pre-reacting with other components such as a curing agent, a curing accelerator, a release agent, a coupling agent, and a stress reliever, and a melt master batch. You can also use

The amount of the epoxy resin is not particularly limited, for example, the epoxy resin may be included in 0.5 to 20% by weight, for example, 1 to 15% by weight in the epoxy resin composition for semiconductor device sealing. In the above range, the curability of the composition may not be lowered.

Hardener

Hardener Curing agents generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, the curing agent may be a phenolic curing agent, for example, the phenolic curing agent may be a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a polyfunctional type phenol resin, a xylok type phenol resin, a cresol novolac Contains type phenol resin, naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolac type phenol resin synthesized from bisphenol A and resol, tris(hydroxyphenyl)methane, dihydroxybiphenyl It may contain one or more of the polyhydric phenol compound. According to one embodiment, the curing agent may include a xylo-type phenolic resin, but is not limited thereto.

The curing agent may have a hydroxyl group equivalent of 90 to 250 g/eq in view of curability. In the above range, the degree of curing can be increased.

The curing agents may be used alone or in combination. In addition, it can also be used as an additive compound made by pre-reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a release agent and a stress reliever.

The amount of the curing agent is not particularly limited, for example, the curing agent may be included in 0.1 to 13% by weight (for example, 1 to 10% by weight) of the epoxy resin composition for semiconductor device sealing. In the above range, the curability of the composition may not be lowered.

The mixing ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be 0.95 to 3, for example, 1 to 2, and other examples, 1 to 1.75. When the equivalent ratio of the epoxy resin and the curing agent satisfies the above range, excellent strength can be achieved after curing the composition.

Inorganic filler

Inorganic fillers can be used to achieve improved mechanical properties and lower stress of the epoxy resin composition for sealing semiconductor devices. Inorganic fillers, general inorganic fillers used for sealing semiconductor devices may be used without limitation, and are not particularly limited. For example, fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. can be used as the inorganic filler. .

According to one embodiment, fused silica having a low coefficient of linear expansion may be used for low stress. Fused silica refers to amorphous silica having a true specific gravity of 2.3 or less, and may also include amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the fused silica are not particularly limited, but the spherical fused silica having an average particle diameter (D ₅₀ ) of 5 to 30 μm is 50 to 99% by weight, and the spherical fused silica having an average particle diameter (D ₅₀ ) of 0.001 to 1 μm is 1 to The fused silica mixture containing 50% by weight may be included to be 40 to 100% by weight relative to the total filler. Here, the average particle diameter (D ₅₀ ) can be measured using particle size analyzer equipment. Further, the maximum particle size can be adjusted to any one of 45 µm, 55 µm, and 75 µm according to the application.

The amount of the inorganic filler may vary depending on the required properties such as moldability, low stress, and high temperature strength. For example, the inorganic filler may be included in 70 to 95% by weight (for example, 80 to 92% by weight) of the epoxy resin composition for sealing semiconductor devices. In the above range, it is possible to secure the flame retardancy, flowability and reliability of the composition.

Acrylic polymer and vinyl terminal silane compound

The epoxy resin composition for sealing a semiconductor device includes an acrylic polymer and a vinyl group terminal silane compound at the same time, so that the vinyl group terminal silane compound improves the compatibility of the acrylic polymer with no appearance defect, and simultaneously reduces the linear expansion coefficient and elastic modulus. In synergy, the warpage can be remarkably improved.

The acrylic polymer may mean a polymer including a poly(meth)acrylate structure, and the poly(meth)acrylate structure may be included in the main chain and/or side chain of the polymer.

According to one embodiment, as the acrylic polymer, one or more homopolymers, copolymers or mixtures thereof selected from acrylic acid monomers, methacrylic acid monomers, acrylic acid alkyl ester monomers, and methacrylic acid alkyl ester monomers may be used. For example, acrylic polymers include polyacrylate, polymethacrylate, polymethylacrylate, polymethylmethacrylate, polyethylacrylate, polyethylmethacrylate, polypropylacrylate, polypropylmethacrylate, poly Butyl acrylate, polybutyl methacrylate, polypentyl acrylate, polypentyl methacrylate, polycyclohexyl acrylate, polycyclohexyl methacrylate, polyn-hexyl acrylate, polyn-hexyl methacrylate, poly Glycidyl acrylate, polyglycidyl methacrylate, polyacrylic acid, polymethacrylic acid, aminoethyl polyacrylate, or mixtures thereof. According to one embodiment, the acrylic polymer may be polymethyl acrylate, but is not limited thereto.

According to one embodiment, the glass transition temperature (Tg) of the acrylic polymer is not limited thereto, but may be -50 to 100°C, for example, 0 to 50°C. In the above range, reliability may be excellent.

According to one embodiment, the weight average molecular weight of the acrylic polymer is not limited thereto, but may be 1,000 to 100,000 g/mol, for example, 10,000 to 50,000 g/mol. Within the above range, workability can be secured. Here, the weight average molecular weight may be a weight average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

The amount of the acrylic polymer is not particularly limited, but for example, the acrylic polymer may be included in 0.1 to 5% by weight (for example, 0.2 to 3% by weight) of the epoxy resin composition for semiconductor device sealing. In the above range, there may be a warping reduction effect.

The vinyl group terminal silane compound may mean a silane compound having a vinyl group at the main chain and/or side chain ends.

According to one embodiment, the vinyl group terminal silane-based compound may be represented by Formula 1 below:

<Formula 1>

.

.

In Formula 1, L ₁ is selected from a substituted or unsubstituted C ₁ -C ₁₀ alkylene group, a substituted or unsubstituted C ₃ -C ₁₀ cycloalkylene group, and a substituted or unsubstituted C ₆ -C ₃₀ arylene group. Can be. For example, L ₁ may be selected from methylene group, ethylene group, propylene group, butylene group, pentylene group, cyclopropylene group, cyclobutylene group, cyclopentylene group, phenylene group and naphthalene group. According to one embodiment, L ₁ may be selected from methylene group, ethylene group, propylene group, butylene group and pentylene group. According to another embodiment, L ₁ may be a propylene group, but is not limited thereto.

In Formula 1, a1 may be selected from integers of 0 to 10. a1 represents the number of L ₁ , and when a1 is 2 or more, 2 or more L ₁ may be the same or different from each other. For example, a1 may be selected from integers of 0 to 5, for example, 2 to 5, but is not limited thereto.

In Chemical Formula 1, R ₁ to R ₃ may be independently selected from hydrogen and a C ₁ -C ₁₀ alkyl group. For example, R ₁ to R ₃ may be each independently selected from hydrogen, methyl group, ethyl group, propyl group, and butyl group, but are not limited thereto.

According to another embodiment, the vinyl group terminal silane-based compound may be represented by Formula 2:

<Formula 2>

.

.

In Formula 2, L ₂ is selected from a substituted or unsubstituted C ₁ -C ₁₀ alkylene group, a substituted or unsubstituted C ₃ -C ₁₀ cycloalkylene group, and a substituted or unsubstituted C ₆ -C ₃₀ arylene group. Can be. For example, L ₂ may be selected from methylene group, ethylene group, propylene group, butylene group, pentylene group, cyclopropylene group, cyclobutylene group, cyclopentylene group, phenylene group and naphthalene group. According to one embodiment, L ₂ may be selected from methylene group, ethylene group, propylene group, butylene group and pentylene group. According to another embodiment, L ₂ may be a propylene group, but is not limited thereto.

In Formula 2, a2 may be selected from integers of 1 to 10. a2 represents the number of L ₂ , and when a2 is 2 or more, 2 or more L ₂ may be the same or different from each other. For example, a2 may be selected from integers of 1 to 5, for example 2 to 5, but is not limited thereto.

In Formula 2, R ₄ to R ₇ may be each independently selected from hydrogen and a C ₁ -C ₁₀ alkyl group. For example, R ₄ to R ₇ may be each independently selected from hydrogen, methyl, ethyl, propyl, and butyl groups, but are not limited thereto.

According to one embodiment, the vinyl group terminal silane-based compound may be 3-acryloxypropyl trimethoxysilane, but is not limited thereto.

The amount of the vinyl group terminal silane compound is not particularly limited, but for example, the vinyl group terminal silane compound may be included in an amount of 0.01 to 5% by weight (for example, 0.05 to 2% by weight) in the epoxy resin composition for sealing semiconductor devices. have. In the above range, there may be a warpage improvement effect.

According to one embodiment, the total amount of the acrylic polymer and the vinyl group terminal silane compound in the epoxy resin composition for semiconductor device sealing may be 0.1 to 5% by weight (for example, 0.5 to 3% by weight), acrylic polymer and vinyl The weight ratio of the group terminal silane-based compound may be 1:1 to 4:1 (eg, 2:1 to 4:1). In the above range, there may be an effect of improving appearance.

The epoxy resin composition for sealing a semiconductor device may further include a curing accelerator.

Curing accelerator

The curing accelerator may refer to a material that promotes the reaction of the epoxy resin and the curing agent. As the curing accelerator, for example, tertiary amines, organometallic compounds, organophosphorus compounds, imidazole compounds, boron compounds, and the like can be used.

Examples of tertiary amines are benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(dia Minomethyl)phenol and tri-2-ethylhexyl salt. Examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, and nickel acetylacetonate. Examples of organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, tri And phenylphosphine-1,4-benzoquinone adducts. Examples of the imidazole compound include 2-phenyl-4-methylimidazole, 2-methylimidazole,　2-phenylimidazole,　2-aminoimidazole, 2-methyl-1-vinylimidazole, 2- Ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound are tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroboranemonoethylamine, tetrafluoroboranetri Ethylamine, tetrafluoroboranamine, and the like. In addition, examples of the curing accelerator include 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-dia Java ecyclo[5.4.0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU), phenol novolak resin salt, and the like, but are not limited thereto.

The curing accelerator may also be possible to use an epoxy resin or an adduct made by pre-reacting with the curing agent.

The amount of the curing accelerator is not particularly limited, but, for example, the curing accelerator may be included in an amount of 0.01 to 2% by weight (for example, 0.02 to 1.5% by weight) in the epoxy resin composition for sealing a semiconductor device. In the above range, it is possible to promote the curing of the composition, and the degree of curing may also be good.

The epoxy resin composition for sealing a semiconductor device may further include at least one of a coupling agent, a release agent, and a colorant.

Coupling agent

The coupling agent is intended to improve the interface strength by reacting between the epoxy resin and the inorganic filler, and examples of the coupling agent include a silane coupling agent. The silane coupling agent may be one that reacts between the epoxy resin and the inorganic filler to improve the interface strength of the epoxy resin and the inorganic filler, and the type is not particularly limited. Examples of the silane coupling agent include epoxy silane, amino silane, ureido silane, mercapto silane, and alkyl silane. Coupling agents can be used alone or in combination.

The amount of the coupling agent is not particularly limited, for example, the coupling agent may be included in 0.01 to 5% by weight (for example, 0.05 to 3% by weight) of the epoxy resin composition for sealing a semiconductor device. In the above range, the strength of the cured composition may be improved.

Release agent

As the release agent, one or more of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt may be used.

The amount of the release agent is not particularly limited, for example, the release agent may be included in an amount of 0.01 to 1% by weight of the epoxy resin composition for sealing a semiconductor device.

coloring agent

The colorant is for laser marking of a semiconductor element sealing material, and colorants well known in the art can be used, and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.

The amount of the colorant used is not particularly limited, for example, the colorant may be included in an amount of 0.01 to 5% by weight (for example, 0.05 to 3% by weight) of the epoxy resin composition for sealing a semiconductor device.

In addition, the epoxy resin composition for sealing a semiconductor device includes antioxidants such as Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate]methane within a range not detrimental to the object of the present invention; Flame retardants, such as aluminum hydroxide, etc., can be further included as needed.

The epoxy resin composition for sealing a semiconductor device described above is uniformly sufficiently mixed at a predetermined mixing ratio using a Henschel mixer or a Lodige mixer, and then roll-mill or After melt-kneading with a kneader, it may be manufactured by a method of obtaining a final powder product through a cooling and grinding process.

The epoxy resin composition for sealing a semiconductor device described above can be usefully applied to a semiconductor device, particularly a semiconductor device mounted on a mobile display or a fingerprint sensor of a vehicle. As a method of sealing a semiconductor element using the above-described epoxy resin composition for sealing a semiconductor element, a low pressure transfer molding method can be generally used. However, molding may also be performed by a method such as injection molding or casting.

According to another aspect, a semiconductor device sealed using the above-described epoxy resin composition for sealing semiconductor elements is disclosed.

Hereinafter, for example, the epoxy resin composition for semiconductor device sealing according to an embodiment of the present invention will be described in more detail. However, this is provided as an example of the present invention, and in no way can be interpreted as limiting the present invention.

Example

Specific specifications of the components used in Examples and Comparative Examples are as follows.

(A) Epoxy resin: YDCN-500-8P (Kukdo Chemical Co., Ltd.)

(B) Curing agent: HE100C-10 (Air Water)

(C) Inorganic filler: 9:1 (weight ratio) mixture of spherical fused silica having an average particle diameter (D ₅₀ ) of 20 μm and spherical fused silica having an average particle diameter (D ₅₀ ) of 0.5 μm.

(D) Acrylic polymer: polymethyl acrylate having a weight average molecular weight of about 40,000 (kanto chemical)

(E) Vinyl group terminal silane compound: KBM-5103 (shinetsu)

(F) Hardening accelerator: triphenylphosphine (Hokko chemical industry)

(G) Coupling agent: A-187 (Momentive)

(H) Coloring agent: MA-100R (Mitsubishi Chemical Corporation)

(I) Mold release agent: Carnauba wax (kanto chemical)

Examples 1 and 2 and Comparative Examples 1 and 2

Each component was weighed according to the composition of Table 1 below, and then mixed to prepare an epoxy resin composition for sealing a semiconductor device. In Table 1, the unit of use of each composition is% by weight.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 (A) 7.7 8.3 9 8 (B) 3.8 4.2 4.5 4 (C) 85 85 85 85 (D) 2 One - 2 (E) 0.5 0.5 0.5 - (F) 0.3 0.3 0.3 0.3 (G) 0.3 0.3 0.3 0.3 (H) 0.3 0.3 0.3 0.3 (I) 0.1 0.1 0.1 0.1

The physical properties of the epoxy resin compositions of Examples and Comparative Examples prepared as described above were measured according to the following physical property evaluation methods. Table 2 shows the measurement results.

Method for evaluating physical properties

(1) Coefficient of linear expansion (unit: ppm/°C): evaluated according to ASTM D696. The linear expansion coefficient at a temperature below the glass transition temperature was evaluated as CTE1, and the linear expansion coefficient at a temperature above the glass transition temperature was evaluated as CTE2.

(2) Flexural modulus (unit: GPa): After preparing a standard specimen (125×12.6×6.4mm) in accordance with ASTM D-790, curing at 175°C for 4 hours, then using a universal testing machine (UTM) at room temperature ( 25°C).

(3) Glass transition temperature (Tg) (unit: ℃): was measured using a thermomechanical analyzer (TMA). At this time, the TMA was set to a condition of increasing the temperature by 10°C per minute at 25°C to 300°C.

(4) Poor appearance: The compositions prepared in Examples and Comparative Examples were cured on an 8 inch wafer at 175°C for 60 seconds to prepare 10 samples each. Flow marks or stains were visually checked on the top surface of the sample coated with the composition to determine whether the appearance was defective.

(5) Bending (unit: μm): A sample was prepared by curing on an 8 inch wafer at 175° C. for 60 seconds with the composition prepared in Examples and Comparative Examples. Then, the prepared sample was further cured at 175°C for 2 hours, and then cooled to 25°C. Thereafter, a height difference between the center of the top surface and the edge of the edge was measured using a non-contact laser measuring device.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Linear expansion
Coefficient CTE1 10 12 14 11 CTE2 34 38 44 44 Modulus of elasticity 1.5 1.9 2.3 2.2 Tg 163 164 162 162 Poor number of samples 0 0 0 5 (50%) warp 1,023 1,285 1,683 1,311

As shown in Table 2, the epoxy resin composition of the present invention was able to improve the warpage by simultaneously lowering the coefficient of linear expansion and the modulus of elasticity while improving the compatibility of the vinyl-based terminal silane-based compound with no defect of appearance.

On the other hand, Comparative Example 1 without the acrylic polymer of the present invention had a high coefficient of linear expansion and modulus of elasticity. And, Comparative Example 2 without the vinyl-based terminal silane-based compound of the present invention not only has a high modulus of elasticity, but also has a poor appearance due to low compatibility of the acrylic polymer.

Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (7)

An epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, an inorganic filler, an acrylic polymer, and a vinyl group terminal silane compound.
According to claim 1,
The acrylic polymer is an epoxy resin composition for sealing a semiconductor device comprising a polymethyl acrylate.
According to claim 1,
The vinyl group-terminated silane-based compound is an epoxy resin composition for sealing a semiconductor device represented by the following Chemical Formula 1 or Chemical Formula 2:
<Formula 1>

<Formula 2>

In Formula 1 and 2,
L ₁ and L ₂ are each independently a substituted or unsubstituted C ₁ -C ₁₀ alkylene group, a substituted or unsubstituted C ₃ -C ₁₀ cycloalkylene group, and a substituted or unsubstituted C ₆ -C ₃₀ arylene group. Is selected from
a1 is an integer selected from 0 to 10,
a2 is an integer selected from 1 to 10,
R ₁ to R ₇ are each independently selected from hydrogen and a C ₁ -C ₁₀ alkyl group.
According to claim 3,
L ₁ and L ₂ are each independently selected from a methylene group, an ethylene group, a propylene group, a butylene group, and a pentylene group,
a1 is an integer selected from 0 to 5,
a2 is an integer selected from 1 to 5,
R ₁ to R ₇ are independently of each other, an epoxy resin composition for sealing a semiconductor device selected from hydrogen, methyl, ethyl, propyl and butyl groups.
According to claim 1,
The vinyl-terminal silane-based compound comprises 3-acryloxypropyl trimethoxysilane, an epoxy resin composition for semiconductor device sealing.
According to claim 1,
0.5 to 20% by weight of the epoxy resin;
0.1 to 13% by weight of the curing agent;
70 to 95% by weight of the inorganic filler;
0.1 to 5% by weight of the acrylic polymer, and
Epoxy resin composition for sealing a semiconductor device comprising the vinyl group terminal silane compound 0.01 to 5% by weight
A semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of claims 1 to 6.