KR102264930B1 - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

Disclosed are an epoxy resin composition for semiconductor device encapsulation comprising an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid, and a semiconductor device sealed using the same.

Description

EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME

The present invention relates to an epoxy resin composition for sealing a semiconductor element and a semiconductor element sealed using the same, and more particularly, to a synergistic effect in reducing the coefficient of linear expansion and the modulus at the same time below the glass transition temperature. It relates to an epoxy resin composition for sealing a semiconductor device capable of remarkably improving warpage, and a semiconductor device sealed using the same.

As a method of packaging semiconductor devices such as ICs and LSIs and obtaining semiconductor devices, transfer molding of an epoxy resin composition is widely used in terms of low cost and suitable for mass production. The improvement of the epoxy resin or the phenol resin as a curing agent can improve the characteristics and reliability of the semiconductor device.

However, as electronic devices are becoming smaller, lighter, and higher in performance these days, high integration of semiconductors is also accelerating every year. In addition, as the demand for surface-mounting of semiconductor devices increases, there are problems that cannot be solved by conventional epoxy resin compositions. It requires low shrinkage and low elastic properties to improve the problems caused by the warpage of the package due to thermal expansion and thermal contraction between the substrate and the composition and the chip breakage and defect problems caused by the highly elastic cured product. have.

In a package in which only one side on a substrate is sealed with a resin composition, a method of reducing curing shrinkage of the resin composition is known as a method of reducing warpage. For organic substrates, a resin having a high glass transition temperature (Tg) such as bismaleimide triazine (BT) resin or polyimide resin is widely used. They have a Tg higher than around 170°C, which is the molding temperature of the resin composition. In this case, in the cooling process from the molding temperature to room temperature, the linear expansion coefficient of the organic substrate contracts only in the region of ?1.

In order to reduce warpage, a method of bringing the coefficient of linear expansion of a substrate close to that of a cured resin is known. A method of introducing into the resin a naphthalene skeleton known to bring α1 closer to the substrate or lower the coefficient of linear expansion into the resin by using a resin having a low melt viscosity and increasing the blending amount of the inorganic filler has also been proposed.

However, there are problems to be solved even in such a resin composition. When the proportion of the inorganic filler increases, fluidity and moldability are easily reduced, the reliability of the semiconductor package is reduced by increasing the elastic modulus, and when a resin composition having a high Tg is used to reduce curing shrinkage, the elastic modulus is generally greatly increased. This makes them vulnerable to external stress caused by heat or impact.

An object of the present invention is to provide an epoxy resin composition for sealing semiconductor devices capable of improving warpage by simultaneously lowering the coefficient of linear expansion (CTE1) below the glass transition temperature and the modulus of elasticity at room temperature.

Another object of the present invention is to provide a semiconductor device sealed with the epoxy resin composition as described above.

1. According to one aspect, there is provided an epoxy resin composition for sealing a semiconductor device including an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid.

2. In 1 above, the acrylic ester polymer may include at least one functional group selected from a carboxy group, a hydroxyl group, an epoxy group, and an amide group.

3. In 1 or 2 above, the silicone fluid may include a polyether-modified silicone-based compound.

4. In any one of 1 to 3, the weight ratio of the acrylic ester polymer to the silicone fluid may be 1:1 to 4:1.

5. In any one of 1 to 4, the total amount of the acrylic ester polymer and the silicone fluid in the composition may be 0.1 to 5 wt%.

6. In any one of 1 to 5, the epoxy resin composition for semiconductor device encapsulation, 0.5 to 20% by weight of the epoxy resin;

0.1 to 13% by weight of the curing agent;

70 to 95% by weight of the inorganic filler;

0.1 to 5 wt% of the total amount of the acrylic ester polymer and the silicone fluid; may include.

7. According to another aspect, there is provided a semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of 1 to 6 above.

The present invention has the effect of providing an epoxy resin composition capable of remarkably improving warpage by synergistically reducing the coefficient of linear expansion and the elastic modulus at or below the glass transition temperature at the same time, and a semiconductor device sealed therefrom.

In this specification, the singular expression includes the plural expression unless the context clearly dictates otherwise.

In this specification, terms such as include or have means that the features or components described in the specification are present, and the possibility that one or more other features or components may be added is not excluded in advance.

In the present specification, "to" in "a to b" representing a numerical range is defined as a or more and b or less.

According to one aspect, the epoxy resin composition for sealing a semiconductor device may include an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid.

Hereinafter, each component of the epoxy resin composition for semiconductor element encapsulation will be described in more detail.

epoxy resin

As the epoxy resin, epoxy resins commonly used for sealing semiconductor devices may be used, and there is no particular limitation. Specifically, the epoxy resin may use an epoxy compound containing two or more epoxy groups in the molecule. For example, the epoxy resin is an epoxy resin obtained by epoxidizing a condensate of phenol or alkylphenols and hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a polyfunctional type epoxy Resin, naphthol novolak type epoxy resin, novolak type epoxy resin of bisphenol A/bisphenol F/bisphenol AD, glycidyl ether of bisphenol A/bisphenol F/bisphenol AD, bishydroxybiphenyl type epoxy resin, dicyclopenta A diene type epoxy resin, a biphenyl type epoxy resin, etc. are mentioned. According to one embodiment, the epoxy resin may use a polyfunctional epoxy resin, but is not limited thereto.

An epoxy resin having an epoxy equivalent weight of 100 to 500 g/eq may be used in consideration of the curability aspect. It is possible to increase the degree of curing within the above range.

Epoxy resin can be used alone or in combination, and it is in the form of an addition compound made by pre-reacting the epoxy resin with other components such as a curing agent, curing accelerator, release agent, coupling agent and stress reliever, such as a melt master batch. can also be used.

The amount of the epoxy resin to be used is not particularly limited, but, for example, the epoxy resin may be included in an amount of 0.5 to 20% by weight, for example, 1 to 15% by weight, in the epoxy resin composition for sealing semiconductor devices. Within the above range, the curability of the composition may not decrease.

hardener

hardener Curing agents generally used for sealing semiconductor devices may be used, and there is no particular limitation. Specifically, the curing agent may use a phenolic curing agent. For example, the phenolic curing agent is a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a polyfunctional type phenol resin, a xylok type phenol resin, and a cresol novolac. Includes type phenol resin, naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolak type phenol resin synthesized from bisphenol A and resol, tris(hydroxyphenyl)methane, dihydroxybiphenyl It may contain one or more of polyhydric phenol compounds. According to one embodiment, the curing agent may include a xylok-type phenol resin, but is not limited thereto.

The curing agent may have a hydroxyl group equivalent weight of 90 to 250 g/eq in consideration of curability. Within the above range, the degree of curing may be increased.

Each of the curing agents may be used alone or in combination. In addition, it can be used as an additive compound made by pre-reacting a curing agent with other components such as an epoxy resin, a curing accelerator, a release agent and a stress reliever, such as a melt master batch.

The amount of the curing agent used is not particularly limited, but, for example, the curing agent may be included in an amount of 0.1 to 13% by weight (eg, 1 to 10% by weight) of the epoxy resin composition for sealing semiconductor devices. Within the above range, the curability of the composition may not decrease.

The mixing ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be 0.95 to 3, for example, 1 to 2, for example, 1 to 1.75. When the equivalent ratio of the epoxy resin and the curing agent satisfies the above range, excellent strength can be achieved after curing the composition.

inorganic filler

The inorganic filler may be used to improve the mechanical properties of the epoxy resin composition for semiconductor device encapsulation and to achieve low stress. As the inorganic filler, general inorganic fillers used for sealing semiconductor devices may be used without limitation, and there is no particular limitation. For example, fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. can be used as the inorganic filler. .

According to one embodiment, fused silica having a low coefficient of linear expansion may be used to reduce stress. Fused silica refers to amorphous silica having a true specific gravity of 2.3 or less, and may also include amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the fused silica are not particularly limited, but _{50 to 99% by weight of the spherical fused silica having an average particle diameter (D 50} ) of 5 to 30 μm, and the spherical fused silica having an average particle diameter (D ₅₀ ) of 0.001 to 1 μm from 1 to The fused silica mixture including 50% by weight may be included in an amount of 40 to 100% by weight based on the total filler. Here, the average particle diameter (D ₅₀ ) may be measured with a particle size analyzer. In addition, the maximum particle size can be adjusted to any one of 45 µm, 55 µm, and 75 µm according to the application.

The amount of the inorganic filler used may vary depending on required physical properties such as formability, low stress, and high temperature strength. For example, the inorganic filler may be included in an amount of 70 to 95% by weight (eg, 80 to 92% by weight) of the epoxy resin composition for sealing semiconductor devices. Within the above range, it is possible to secure the flame retardancy, fluidity and reliability of the composition.

Acrylic Ester Polymer and Silicone Fluid

The epoxy resin composition for semiconductor device encapsulation contains an acrylic ester polymer and a silicone fluid at the same time, thereby reducing the coefficient of linear expansion and the modulus of elasticity below the glass transition temperature at the same time, thereby producing a synergistic effect and remarkably improving warpage.

The acrylic ester polymer may refer to a polymer including a polyacrylate structure, and the polyacrylate structure may be included in the main chain and/or side chain of the polymer.

According to one embodiment, the acrylic ester polymer may include a repeating unit derived from an alkyl acrylate monomer. As the alkyl acrylate monomer, for example, C ₁ -C ₁₀ alkyl acrylate (eg, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, etc.) may be used, which may be used alone or in combination with two More than one species may be mixed and used.

According to another embodiment, the acrylic ester polymer may further include a repeating unit derived from an acrylamide monomer in addition to the repeating unit derived from the alkyl acrylate monomer. As the acrylamide monomer, a monomer having an amide functional group and a double bond, for example, acrylamide, methyl acrylamide, n-propyl acrylamide, iso-propyl acrylamide, etc. may be used, and these may be used alone or in two types. More than one may be mixed and used.

According to another embodiment, the acrylic ester polymer comprises, in addition to repeating units derived from an alkyl acrylate monomer, a repeating unit derived from an acrylamide monomer and/or other repeating units, such as alkyl methacrylate (e.g., methyl meta acrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, etc.), unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, etc.), acid anhydrides (eg, maleic anhydride, etc.), Hydroxy-containing esters (eg, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, monoglycerol acrylate, etc.), nitrile-based monomers (eg, (meth)acryl) ronitrile, etc.), an epoxy group-containing monomer (eg, allyl glycidyl ether, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc.), and/or a styrenic monomer (eg, , styrene, α-methylstyrene, etc.) may further include a repeating unit derived from, but is not limited thereto.

According to one embodiment, the acrylic ester polymer may include a functional group, for example, the acrylic ester polymer may include one or more functional groups among a carboxy group, a hydroxyl group, an epoxy group, and an amide group. According to one embodiment, the acrylic ester polymer may include at least one of an epoxy group-containing acrylic ester polymer, an amide group-containing acrylic ester polymer, and an epoxy group and an amide group-containing acrylic ester polymer, but is not limited thereto. When the acrylic ester polymer includes a functional group, the functional group equivalent may be, but not limited to, 1,000 to 50,000 g/eq, for example, 2,500 to 30,000 g/eq.

According to one embodiment, the glass transition temperature (Tg) of the acrylic ester polymer, but is not limited thereto, may be 25 ℃ or less.

According to one embodiment, the weight average molecular weight of the acrylic ester polymer is not limited thereto, but may be 10,000 to 1,000,000, for example, 30,000 to 900,000. Here, the weight average molecular weight may be a weight average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

As the acrylic ester polymer, commercially available products may be used, and for example, SG-P3, SG-80H, SG-80H-3, and the like may be used.

The silicone fluid may refer to a silicone-based compound that is liquid at 25°C.

According to one embodiment, the silicone fluid may have a linear siloxane skeleton in the main chain, and optionally an epoxy group, an amino group, a hydroxyl group, a methacryl group, a mercapto group, a carboxyl group, an alkoxy group, a silanol group, etc. It may contain more than one species.

According to one embodiment, the silicone fluid may include a polyether-modified silicone-based compound, and in this case, the effect of reducing the elastic modulus may be excellent. The polyether-modified silicone-based compound may include a silicone-based compound in which polyalkylsiloxane is modified with a polyether chain. The polyether chain is not particularly limited, and examples thereof include ethylene oxide and propylene oxide. The polyether chain may be composed of one type or two or more types. The polyether chain is also possible at the end of the polyalkylsiloxane, and one in the side chain may be used. The polyalkylsiloxane may be a polysiloxane having a linear D unit structure and having an alkyl group, wherein the number of carbon atoms in the alkyl group is not particularly limited. For example, the polyalkylsiloxane may be polydimethylsiloxane. According to one embodiment, the polyether-modified silicone-based compound may include polyether-modified polydimethylsiloxane.

According to one embodiment, the weight average molecular weight of the silicone fluid is not limited thereto, but may be 1,000 to 200,000, for example, 20,000 to 100,000. Here, the weight average molecular weight may be a weight average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

According to one embodiment, the viscosity at 25° C. of the silicone fluid is not limited thereto, but ^{may be 600 mm 2} /s or less, for example, 50 to 500 mm ² /s.

As the silicone fluid, commercially available products may be used, for example, SF8427, X-22-4952, FZ-2162, SH3773M, and the like.

According to one embodiment, the weight ratio of the acrylic ester polymer to the silicone fluid (acrylic ester polymer: silicone fluid) may be 1:1 to 4:1. In the above range, it is possible to significantly improve warpage by producing a synergistic effect in reducing the coefficient of linear expansion and the modulus of elasticity below the glass transition temperature at the same time.

The amount of the acrylic ester polymer and the silicone fluid used is not particularly limited, but for example, the total amount of the acrylic ester polymer and the silicone fluid in the epoxy resin composition for sealing semiconductor devices is 0.1 to 5% by weight (eg, 0.8 to 3% by weight) can be In the above range, it may be possible to significantly improve warpage by producing a synergistic effect in reducing the coefficient of linear expansion and the modulus of elasticity below the glass transition temperature at the same time. According to one embodiment, in the epoxy resin composition for semiconductor device encapsulation, the acrylic ester polymer is included in an amount of 0.05 to 4 wt% (for example, 0.4 to 4 wt%), and the silicone fluid is included in an amount of 0.05 to 2.5 wt% (for example, , 0.1 to 1% by weight), and the total amount of the acrylic ester polymer and the silicone fluid may be 0.1 to 5% by weight (eg, 0.8 to 3% by weight), but is not limited thereto.

The epoxy resin composition for semiconductor device encapsulation may further include a curing accelerator.

hardening accelerator

The curing accelerator may refer to a substance that promotes a reaction between the epoxy resin and the curing agent. As the curing accelerator, for example, a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole compound, a boron compound, or the like may be used.

Examples of tertiary amines include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(dia minomethyl)phenol and tri-2-ethylhexylate. Examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate. Examples of the organophosphorus compound include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, tri phenylphosphine-1,4-benzoquinone adducts; Examples of the imidazole compound include 2-phenyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2- ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane tri ethylamine, tetrafluoroboranamine, and the like. In addition, examples of curing accelerators include 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-dia Javacyclo[5.4.0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU), phenol novolac resin salt, and the like, but is not limited thereto.

It may be possible to use an adduct made by pre-reacting with an epoxy resin or a curing agent as the curing accelerator.

The amount of the curing accelerator to be used is not particularly limited, but for example, the curing accelerator may be included in an amount of 0.01 to 2% by weight (eg, 0.02 to 1.5% by weight) of the epoxy resin composition for semiconductor device encapsulation. Within the above range, there may be advantages in promoting the curing of the composition and also having a good degree of curing.

The epoxy resin composition for semiconductor device encapsulation may further include at least one of a coupling agent, a release agent, a colorant, and an ion trapper.

coupling agent

The coupling agent is for improving interfacial strength by reacting between the epoxy resin and the inorganic filler, and examples of the coupling agent include a silane coupling agent. The silane coupling agent reacts between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler, and the type thereof is not particularly limited. Examples of the silane coupling agent include epoxy silane, amino silane, ureido silane, mercapto silane, and alkyl silane. A coupling agent can be used independently and can also be used together.

The amount of the coupling agent used is not particularly limited, but for example, the coupling agent may be included in an amount of 0.01 to 5% by weight (eg, 0.05 to 3% by weight) of the epoxy resin composition for sealing semiconductor devices. Within the above range, the strength of the cured composition may be improved.

release agent

As the releasing agent, at least one of paraffin wax, ester wax, higher fatty acid, metal salt of higher fatty acid, natural fatty acid, and metal salt of natural fatty acid may be used.

The amount of the release agent used is not particularly limited, but, for example, the release agent may be included in an amount of 0.01 to 1% by weight of the epoxy resin composition for sealing semiconductor devices.

coloring agent

The colorant is for laser marking of a semiconductor device encapsulant, and colorants well-known in the art may be used, but is not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, dicopper hydroxide phosphate, iron oxide, and mica.

The amount of the colorant used is not particularly limited, but, for example, the colorant may be included in an amount of 0.01 to 5% by weight (eg, 0.05 to 3% by weight) of the epoxy resin composition for sealing semiconductor devices.

ion scavenger

The ion scavenger is for improving anti-migration resistance, and ion scavengers well known in the art may be used, and there is no particular limitation. For example, the ion scavenger may include at least one of a hydrotalcite compound, bismuth oxide, and yttrium oxide.

The amount of the ion scavenger used is not particularly limited, but, for example, the ion scavenger may be included in an amount of 0.01 to 1% by weight of the epoxy resin composition for sealing semiconductor devices.

In addition, the epoxy resin composition for semiconductor device sealing is an antioxidant such as Tetrakis [methylene-3- (3,5-di-tertbutyl-4-hydroxyphenyl) propionate] methane in the range that does not impair the object of the present invention; A flame retardant such as aluminum hydroxide may be additionally contained as necessary.

The above-described epoxy resin composition for sealing semiconductor devices is uniformly and sufficiently mixed with the above components at a predetermined mixing ratio using a Hensel mixer or a Lodige mixer, and then, using a roll-mill or a roll-mill. After melt-kneading with a kneader, it can be manufactured by a method of obtaining a final powder product through cooling and pulverization processes.

The above-described epoxy resin composition for sealing a semiconductor device may be usefully applied to a semiconductor device, particularly a semiconductor device mounted on a mobile display or a fingerprint recognition sensor of a vehicle. As a method of encapsulating a semiconductor element using the above-described epoxy resin composition for encapsulating a semiconductor element, a low-pressure transfer molding method may be generally used. However, molding may also be possible by a method such as an injection molding method or a casting method.

According to another aspect, a semiconductor device sealed using the above-described epoxy resin composition for sealing semiconductor elements is disclosed.

Hereinafter, for example, an epoxy resin composition for sealing semiconductor devices according to an embodiment of the present invention will be described in more detail. However, this is presented as an example of the present invention, and it cannot be construed as limiting the present invention by this in any sense.

Example

Specific specifications of the components used in the following Examples and Comparative Examples are as follows.

(A) Epoxy resin: EPPN-501HY (Nippon Kayaku Corporation)

(B) Hardener: HE100C-10 (Air Water Company)

(C) Inorganic filler: 9:1 (weight ratio) mixture _{of spherical fused silica having an average particle diameter (D 50} ) of 20 μm and spherical fused silica having an average particle diameter (D _{50 ) of 0.5 μm}

(D) Acrylic ester polymer: SG-80H (Nagase ChemteX)

(E) Silicone fluid: SF-8427 (Dow Corning Toray)

(F) Curing accelerator: TPP-k (Hokko Chemical)

(G) Coupling agent: A-187 (Momentive)

(H) Colorant: MA-100R (Mitsubishi Chemical Corporation)

(I) Ion scavenger: DHT-4A (Kyowa)

(J) Release agent: carnauba wax

Examples 1 and 2 and Comparative Examples 1 to 3

Each component was weighed according to the composition of Table 1 below and mixed to prepare an epoxy resin composition for sealing semiconductor devices. In Table 1 below, the usage unit of each composition is weight %.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 (A) 5.834 4.993 6.395 5.273 5.834 (B) 4.099 3.508 4.493 3.705 4.099 (C) 88 88 88 88 88 (D) 0.5 2 - 2 - (E) 0.5 0.5 - - One (F) 0.467 0.399 0.512 0.422 0.467 (G) 0.3 0.3 0.3 0.3 0.3 (H) 0.2 0.2 0.2 0.2 0.2 (I) 0.05 0.05 0.05 0.05 0.05 (J) 0.05 0.05 0.05 0.05 0.05

The physical properties of the epoxy resin compositions of Examples and Comparative Examples prepared as described above were measured according to the following physical property evaluation method. The measurement results are shown in Table 2.

How to evaluate physical properties

(1) Flowability (unit: inch): The flow length was measured using a transfer molding press at ^{175° C. and 70 kgf/cm 2 using a mold for evaluation according to EMMI-1-66.}

(2) Coefficient of linear expansion (unit: ppm/°C): evaluated by ASTM D696. The coefficient of linear expansion at a temperature below the glass transition temperature was evaluated as CTE1, and the coefficient of linear expansion at a temperature above the glass transition temperature was evaluated as CTE2.

(3) Curing shrinkage (unit: %): molded specimens (125 mm × 12.6 mm × 6.4 mm) using a transfer molding press at ^{175° C. and 70 kgf/cm 2 using an ASTM mold for producing flexural strength specimens.} ) was obtained. The obtained specimen was put in an oven at 175° C., post-molding cure (PMC) was performed for 600 seconds, and then cooled, and the length of the specimen was measured with a caliper. The cure shrinkage was calculated from the following formula (1).

<Equation 1>

Curing shrinkage (%) = (mold length at 175°C - length of specimen) ÷ (mold length at 175°C) × 100

(4) Glass transition temperature (Tg, unit: °C): was measured using a thermomechanical analyzer (TMA). At this time, the TMA was set under conditions of measuring up to 300°C by increasing the temperature at a rate of 10°C per minute from 25°C.

(5) Modulus of elasticity (unit: GPa at 25°C, MPa at 260°C): Epoxy resin composition was cured at a mold temperature of 175°C±5°C, injection pressure of 1000psi±200psi, and curing time of 120 seconds using a transfer molding machine. A specimen (20 mm × 13 mm × 1.6 mm) was molded. After curing the specimen in a hot air dryer at 175° C.±5° C. for 2 hours, the elastic modulus was measured using Q8000 (TA) as a dynamic mechanical analyzer (DMA). When measuring the elastic modulus, the temperature increase rate was 5° C./min, and the temperature was increased from -10° C. to 300° C., and values at 25° C. and 260° C. were obtained as the elastic modulus.

(6) Warpage (unit: μm): The composition prepared in Examples and Comparative Examples was molded by transfer molding at 175° C. for 70 seconds using a multi plunger system (MPS) molding machine, and 24 mm wide including copper metal elements, An exposed thin quad flat package (eTQFP) package having a length of 24 mm and a thickness of 1 mm was fabricated. Thereafter, the manufactured package was post-cured at 175°C for 4 hours and then cooled to 25°C. Then, the height difference between the center and the edge of the edge in the diagonal direction of the eTQFP package was measured using a non-contact laser measuring instrument.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 liquidity 38 35 39 30 43 linear expansion
Coefficient CTE1 7.1 5.5 10 5.8 9 CTE2 40 41 40 41 41 cure shrinkage 0.06 0.04 0.11 0.03 0.08 Tg 167 168 168 167 167 modulus of elasticity @25℃ 15.7 15.9 16.5 16.4 15.5 @260℃ 975 966 978 961 954 warp 1,100 950 1,200 960 1,150

As shown in Table 2, the epoxy resin composition of the present invention was able to improve warpage by simultaneously lowering the coefficient of linear expansion below the glass transition temperature and the modulus of elasticity at 25° C. without significantly lowering the fluidity.

On the other hand, Comparative Example 1, which did not include both the acrylic ester polymer of the present invention and the silicone fluid, had high cure shrinkage, CTE1, elastic modulus at 25°C, and warpage values. And, Comparative Example 2 without the silicone fluid of the present invention had poor fluidity, and the effect of reducing the elastic modulus at 25° C. was weak. In Comparative Example 3, which did not include the acrylic ester polymer of the present invention, the cure shrinkage rate, CTE1 and warpage reduction effects were weak.

Simple modifications or changes of the present invention can be easily carried out by those of ordinary skill in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (7)

0.5 to 20% by weight of an epoxy resin;
0.1 to 13% by weight of a curing agent;
70 to 95% by weight of inorganic fillers;
acrylic ester polymers; and
silicone fluid; including,
The total amount of the acrylic ester polymer and the silicone fluid is 0.1 to 5% by weight, and the weight ratio of the acrylic ester polymer to the silicone fluid is 1:1 to 4:1.
According to claim 1,
The acrylic ester polymer is an epoxy resin composition for sealing a semiconductor device including at least one functional group of a carboxy group, a hydroxyl group, an epoxy group, and an amide group.
According to claim 1,
The silicone fluid is an epoxy resin composition for semiconductor device encapsulation comprising a polyether-modified silicone-based compound.
delete delete delete A semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of claims 1 to 3.