KR20200079837A - Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same - Google Patents

Abstract

Disclosed are: an epoxy resin composition for encapsulating a semiconductor device, comprising an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid; and a semiconductor device encapsulated using the same.

Description

EPOXY RESIN COMPOSITION FOR ENCAPSULATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ENCAPSULATED USING THE SAME}

The present invention relates to an epoxy resin composition for sealing a semiconductor device and a semiconductor device sealed using the same, and more specifically, to produce a synergistic effect in simultaneously reducing the linear expansion coefficient and modulus at a glass transition temperature or lower and bending. The present invention relates to an epoxy resin composition for sealing semiconductor devices capable of significantly improving (warpage) and a semiconductor device sealed using the same.

As a method for packaging semiconductor elements such as IC and LSI and obtaining a semiconductor device, transfer molding of an epoxy resin composition is widely used in that it is suitable for low cost and mass production. Improvement of the properties and reliability of the semiconductor device can be achieved by improving the epoxy resin or the curing agent, phenol resin.

However, with the trend of miniaturization, light weight, and high performance of electronic devices these days, high integration of semiconductors is also accelerating every year. In addition, as the demand for surface mounting of semiconductor devices increases, there are problems that cannot be solved with a conventional epoxy resin composition. It requires low shrinkage and low elasticity properties to improve the problem of chip breakage and defects caused by high elasticity cured products, and problems caused by thermal expansion and thermal warping of the package between the substrate and the composition. have.

In a package in which only one surface on a substrate is sealed with a resin composition, a method of reducing cured shrinkage of the resin composition is known as a method of reducing warpage. In the organic substrate, a resin having a high glass transition temperature (Tg) such as bismaleimide triazine (BT) resin or polyimide resin is widely used. They have a Tg higher than around 170°C, which is the molding temperature of the resin composition. In this case, in the cooling process from the molding temperature to room temperature, the linear expansion coefficient of the organic substrate contracts only in the region of α1.

In order to reduce the warpage, a method is known in which the coefficient of linear expansion of a substrate and the coefficient of linear expansion of a cured resin material are brought into close proximity. It has also been proposed to introduce a naphthalene skeleton into resin that is known to be capable of bringing α1 closer to the substrate or lowering the coefficient of linear expansion by increasing the blending amount of the inorganic filler using a resin having a low melt viscosity.

However, problems to be solved also appear in the resin composition. When the proportion of the inorganic filler increases, the fluidity and formability are liable to decrease, the reliability of the semiconductor package decreases by increasing the elastic modulus, and when the resin composition having a high Tg is used to reduce the curing shrinkage, the elastic modulus generally increases significantly. Therefore, it becomes vulnerable to external stress caused by heat or shock.

An object of the present invention is to provide an epoxy resin composition for sealing a semiconductor device capable of improving warpage by simultaneously lowering the coefficient of linear expansion (CTE1) below the glass transition temperature and the elastic modulus at room temperature.

Another object of the present invention is to provide a semiconductor device sealed with the above epoxy resin composition.

1. According to one aspect, an epoxy resin composition for sealing a semiconductor device including an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid is provided.

2. In the above 1, the acrylic ester polymer may include at least one functional group among carboxyl group, hydroxyl group, epoxy group and amide group.

3. In 1 or 2, the silicone fluid may include a polyether-modified silicone-based compound.

4. In any one of 1 to 3, the weight ratio of the acrylic ester polymer and the silicone fluid may be 1:1 to 4:1.

5. In any one of 1 to 4, the total amount of the acrylic ester polymer and the silicone fluid in the composition may be 0.1 to 5% by weight.

6. In any one of 1 to 5, the epoxy resin composition for sealing a semiconductor device, the epoxy resin 0.5 to 20% by weight;

0.1 to 13% by weight of the curing agent;

70 to 95% by weight of the inorganic filler;

0.1 to 5% by weight of the total amount of the acrylic ester polymer and the silicone fluid; It may include.

7. According to another aspect, a semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of 1 to 6 is provided.

The present invention has an effect of providing an epoxy resin composition capable of remarkably improving the warpage by synergistically reducing the linear expansion coefficient and the elastic modulus at a glass transition temperature or lower, and a semiconductor device sealed therefrom.

In the present specification, a singular expression includes a plural expression unless the context clearly indicates otherwise.

Terms such as include or have in the present specification mean that a feature or component described in the specification exists, and does not preclude the possibility of adding one or more other features or components in advance.

In the present specification, "a to b" in "a to b" representing a numerical range are defined as a or more and b or less.

According to an aspect, the epoxy resin composition for sealing a semiconductor device may include an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid.

Hereinafter, each component of the epoxy resin composition for sealing a semiconductor device will be described in more detail.

Epoxy resin

As the epoxy resin, epoxy resins commonly used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, the epoxy resin may be used an epoxy compound containing two or more epoxy groups in the molecule. For example, the epoxy resin is an epoxy resin obtained by epoxidizing a condensation product of phenol or alkyl phenols with hydroxybenzaldehyde, a phenol aralkyl type epoxy resin, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a polyfunctional type epoxy Resin, naphthol novolac-type epoxy resin, bisphenol A/bisphenol F/bisphenol AD, novolac-type epoxy resin, bisphenol A/bisphenol F/bisphenol AD, glycidyl ether, bishydroxybiphenyl-based epoxy resin, dicyclopenta And diene-based epoxy resins and biphenyl-type epoxy resins. According to one embodiment, the epoxy resin may be a polyfunctional epoxy resin, but is not limited thereto.

The epoxy resin may be an epoxy resin having an epoxy equivalent of 100 to 500 g/eq when considering curability. In the above range, the degree of curing can be increased.

Epoxy resins can be used alone or in combination, and the epoxy resin is made in a compound form by pre-reacting with other components such as a curing agent, a curing accelerator, a release agent, a coupling agent, and a stress reliever, and a melt master batch. You can also use

The amount of the epoxy resin is not particularly limited, for example, the epoxy resin may be included in 0.5 to 20% by weight, for example, 1 to 15% by weight in the epoxy resin composition for semiconductor device sealing. In the above range, the curability of the composition may not be lowered.

Hardener

Hardener Curing agents generally used for sealing semiconductor devices may be used, and are not particularly limited. Specifically, the curing agent may be a phenolic curing agent, for example, the phenolic curing agent may be a phenol aralkyl type phenol resin, a phenol novolak type phenol resin, a polyfunctional type phenol resin, a xylok type phenol resin, a cresol novolac Contains type phenol resin, naphthol type phenol resin, terpene type phenol resin, dicyclopentadiene type phenol resin, novolac type phenol resin synthesized from bisphenol A and resol, tris(hydroxyphenyl)methane, dihydroxybiphenyl It may contain one or more of the polyhydric phenol compound. According to one embodiment, the curing agent may include a xylo-type phenolic resin, but is not limited thereto.

The curing agent may have a hydroxyl group equivalent of 90 to 250 g/eq in view of curability. In the above range, the degree of curing can be increased.

The curing agents may be used alone or in combination. In addition, it can also be used as an additive compound made by pre-reaction such as a melt master batch with other components such as an epoxy resin, a curing accelerator, a release agent and a stress reliever.

The amount of the curing agent is not particularly limited, for example, the curing agent may be included in 0.1 to 13% by weight (for example, 1 to 10% by weight) of the epoxy resin composition for semiconductor device sealing. In the above range, the curability of the composition may not be lowered.

The mixing ratio of the epoxy resin and the curing agent can be adjusted according to the requirements of mechanical properties and moisture resistance reliability in the package. For example, the chemical equivalent ratio of the epoxy resin to the curing agent may be 0.95 to 3, for example, 1 to 2, and other examples, 1 to 1.75. When the equivalent ratio of the epoxy resin and the curing agent satisfies the above range, excellent strength can be achieved after curing the composition.

Inorganic filler

Inorganic fillers can be used to achieve improved mechanical properties and lower stress of the epoxy resin composition for sealing semiconductor devices. Inorganic fillers, general inorganic fillers used for sealing semiconductor devices may be used without limitation, and are not particularly limited. For example, fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. can be used as the inorganic filler. .

According to one embodiment, fused silica having a low coefficient of linear expansion may be used for low stress. Fused silica refers to amorphous silica having a true specific gravity of 2.3 or less, and may also include amorphous silica made by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the fused silica are not particularly limited, but the average particle diameter (D ₅₀ ) of 5 to 30 μm spherical fused silica is 50 to 99% by weight, and the average particle diameter (D ₅₀ ) of 0.001 to 1 μm spherical fused silica is 1 to The fused silica mixture containing 50% by weight may be included to be 40 to 100% by weight relative to the total filler. Here, the average particle diameter (D ₅₀ ) can be measured by a particle size analyzer. Further, the maximum particle size can be adjusted to any one of 45 µm, 55 µm, and 75 µm according to the application.

The amount of the inorganic filler may vary depending on the required properties such as moldability, low stress, and high temperature strength. For example, the inorganic filler may be included in 70 to 95% by weight (for example, 80 to 92% by weight) of the epoxy resin composition for sealing semiconductor devices. In the above range, it is possible to secure the flame retardancy, flowability and reliability of the composition.

Acrylic ester polymer and silicone fluid

The epoxy resin composition for sealing a semiconductor device includes an acrylic ester polymer and a silicone fluid at the same time, so that the linear expansion coefficient and the elastic modulus at a glass transition temperature or lower can be simultaneously reduced, thereby synergistically improving warpage.

The acrylic ester polymer may mean a polymer including a polyacrylate structure, and the polyacrylate structure may be included in the main chain and/or side chain of the polymer.

According to one embodiment, the acrylic ester polymer may include a repeating unit derived from an alkyl acrylate monomer. As the alkyl acrylate monomer, for example, C ₁ -C ₁₀ alkyl acrylate (for example, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, etc.) can be used, which alone or 2 It may be used by mixing more than one species.

According to another embodiment, the acrylic ester polymer may further include a repeating unit derived from an acrylamide monomer, in addition to a repeating unit derived from an alkyl acrylate monomer. As the acrylamide monomer, a monomer having an amide functional group and having a double bond, for example, acrylamide, methyl acrylamide, n-propyl acrylamide, iso-propyl acrylamide, and the like can be used. It can be used by mixing.

According to another embodiment, the acrylic ester polymer, in addition to the repeating units derived from the alkyl acrylate monomer, repeating units derived from the acrylamide monomer and/or other repeating units, such as alkyl methacrylate (eg methyl methacrylate) Acrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, etc., unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, etc.), acid anhydrides (for example, maleic anhydride, etc.), Hydroxy-containing esters (for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, monoglycerol acrylate, etc.), nitrile-based monomers (for example (meth)acrylic Nitrile, etc.), epoxy group-containing monomers (e.g., allyl glycidyl ether, glycidyl (meth)acrylate, methyl glycidyl (meth)acrylate, etc.), and/or styrene-based monomers (e.g. , Styrene, α-methyl styrene, and the like) may further include, but are not limited to.

According to one embodiment, the acrylic ester polymer may include a functional group, for example, the acrylic ester polymer may include one or more functional groups among carboxyl group, hydroxyl group, epoxy group and amide group. According to one embodiment, the acrylic ester polymer may include at least one of an epoxy group-containing acrylic ester polymer, an amide group-containing acrylic ester polymer, and an epoxy group and an amide group-containing acrylic ester polymer, but is not limited thereto. When the acrylic ester polymer includes a functional group, the functional group equivalent may be, but is not limited to, 1,000 to 50,000 g/eq, for example, 2,500 to 30,000 g/eq.

According to one embodiment, the glass transition temperature (Tg) of the acrylic ester polymer is not limited thereto, but may be 25° C. or less.

According to one embodiment, the weight average molecular weight of the acrylic ester polymer is not limited thereto, but may be 10,000 to 1,000,000, for example, 30,000 to 900,000. Here, the weight average molecular weight may be a weight average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

As the acrylic ester polymer, commercially available products may be used, for example, SG-P3, SG-80H, SG-80H-3, and the like.

The silicone fluid may mean a liquid silicone-based compound at 25°C.

According to one embodiment, the silicone fluid may have a straight chain siloxane skeleton in the main chain, and optionally a functional group such as an epoxy group, an amino group, a hydroxyl group, a methacryl group, a mercapto group, a carboxyl group, an alkoxy group, and a silanol group 1 It may contain more than a species.

According to one embodiment, the silicone fluid may include a polyether-modified silicone-based compound, and in this case, an effect of reducing elastic modulus may be excellent. The polyether-modified silicone-based compound may include a silicone-based compound obtained by modifying a polyalkylsiloxane into a polyether chain. The polyether chain is not particularly limited, and examples thereof include ethylene oxide and propylene oxide. The polyether chain may be composed of one kind or two or more kinds. The polyether chain is also possible at the end of the polyalkylsiloxane, and those in the side chain can also be used. The polyalkylsiloxane is a D unit structure and may be a linear and polysiloxane having an alkyl group, wherein the number of carbons of the alkyl group is not particularly limited. For example, the polyalkylsiloxane can be polydimethylsiloxane. According to one embodiment, the polyether-modified silicone-based compound may include polyether-modified polydimethylsiloxane.

According to one embodiment, the weight average molecular weight of the silicone fluid is not limited thereto, but may be 1,000 to 200,000, for example, 20,000 to 100,000. Here, the weight average molecular weight may be a weight average molecular weight in terms of polystyrene measured using gel permeation chromatography (GPC).

According to one embodiment, the viscosity of the silicone fluid at 25°C is not limited thereto, but may be 600 mm ² /s or less, for example, 50 to 500 mm ² /s.

As the silicone fluid, commercially available products may be used, for example, SF8427, X-22-4952, FZ-2162, SH3773M, and the like.

According to one embodiment, the weight ratio of the acrylic ester polymer and the silicone fluid (acrylic ester polymer: silicone fluid) may be 1:1 to 4:1. In the above range, it is possible to significantly improve the warpage by synergistically reducing the linear expansion coefficient and the elastic modulus at the glass transition temperature or less at the same time.

The amount of the acrylic ester polymer and the silicone fluid is not particularly limited. For example, the total amount of the acrylic ester polymer and the silicone fluid in the epoxy resin composition for sealing semiconductor devices is 0.1 to 5% by weight (for example, 0.8 to 3% by weight). Can be In the above range, it is possible to significantly improve the warpage by synergistically reducing the linear expansion coefficient and the elastic modulus at a glass transition temperature or less at the same time. According to one embodiment, the acrylic ester polymer in the epoxy resin composition for sealing a semiconductor device is included in 0.05 to 4% by weight (for example, 0.4 to 4% by weight), and the silicone fluid is 0.05 to 2.5% by weight (for example, , 0.1 to 1% by weight), the total amount of the acrylic ester polymer and the silicone fluid may be 0.1 to 5% by weight (for example, 0.8 to 3% by weight), but is not limited thereto.

The epoxy resin composition for sealing a semiconductor device may further include a curing accelerator.

Curing accelerator

The curing accelerator may refer to a material that promotes the reaction of the epoxy resin and the curing agent. As the curing accelerator, for example, tertiary amines, organometallic compounds, organophosphorus compounds, imidazole compounds, boron compounds, and the like can be used.

Examples of tertiary amines are benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(dia Minomethyl)phenol and tri-2-ethylhexyl salt. Examples of the organometallic compound include chromium acetylacetonate, zinc acetylacetonate, and nickel acetylacetonate. Examples of organophosphorus compounds include tris-4-methoxyphosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, tri And phenylphosphine-1,4-benzoquinone adducts. Examples of the imidazole compound include 2-phenyl-4-methylimidazole, 2-methylimidazole,　2-phenylimidazole,　2-aminoimidazole, 2-methyl-1-vinylimidazole, 2- Ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of the boron compound are tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroboranemonoethylamine, tetrafluoroboranetri Ethylamine, tetrafluoroboranamine, and the like. In addition, examples of the curing accelerator include 1,5-diazabicyclo[4.3.0]non-5-ene (1,5-diazabicyclo[4.3.0]non-5-ene: DBN), 1,8-dia Java ecyclo[5.4.0]undec-7-ene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU), phenol novolak resin salt, and the like, but are not limited thereto.

The curing accelerator may also be possible to use an epoxy resin or an adduct made by pre-reacting with the curing agent.

The amount of the curing accelerator is not particularly limited, but for example, the curing accelerator may be included in an amount of 0.01 to 2% by weight (for example, 0.02 to 1.5% by weight) in the epoxy resin composition for sealing a semiconductor device. In the above range, it is possible to promote the curing of the composition, and the degree of curing may also be good.

The epoxy resin composition for sealing a semiconductor device may further include at least one of a coupling agent, a release agent, a colorant, and an ion trapper.

Coupling agent

The coupling agent is intended to improve the interface strength by reacting between the epoxy resin and the inorganic filler, and examples of the coupling agent include a silane coupling agent. The silane coupling agent may be one that reacts between the epoxy resin and the inorganic filler to improve the interface strength of the epoxy resin and the inorganic filler, and the type is not particularly limited. Examples of the silane coupling agent include epoxy silane, amino silane, ureido silane, mercapto silane, and alkyl silane. Coupling agents can be used alone or in combination.

The amount of the coupling agent is not particularly limited, for example, the coupling agent may be included in 0.01 to 5% by weight (for example, 0.05 to 3% by weight) of the epoxy resin composition for semiconductor device sealing. In the above range, the strength of the cured composition may be improved.

Release agent

As the release agent, one or more of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid and natural fatty acid metal salt may be used.

The amount of the release agent is not particularly limited, for example, the release agent may be included in an amount of 0.01 to 1% by weight of the epoxy resin composition for semiconductor device sealing.

coloring agent

The colorant is for laser marking of a semiconductor element sealing material, and colorants well known in the art can be used, and are not particularly limited. For example, the colorant may include one or more of carbon black, titanium black, titanium nitride, copper hydroxide phosphate, iron oxide, and mica.

The amount of the coloring agent is not particularly limited, for example, the coloring agent may be included in 0.01 to 5% by weight (for example, 0.05 to 3% by weight) of the epoxy resin composition for semiconductor device sealing.

Ion trapping agent

The ion trapping agent is for improving anti-migration, and ion trapping agents well known in the art may be used and are not particularly limited. For example, the ion trapping agent may include at least one of a hydrotalcite compound, bismuth oxide, and yttrium oxide.

The amount of the ion trapping agent is not particularly limited, but, for example, the ion trapping agent may be included in an amount of 0.01 to 1% by weight in the epoxy resin composition for sealing a semiconductor device.

In addition, the epoxy resin composition for sealing a semiconductor device includes antioxidants such as Tetrakis[methylene-3-(3,5-di-tertbutyl-4-hydroxyphenyl)propionate]methane within a range not detrimental to the object of the present invention; Flame retardants, such as aluminum hydroxide, etc., can be further included as needed.

The epoxy resin composition for sealing a semiconductor device described above is uniformly sufficiently mixed at a predetermined mixing ratio using a Henschel mixer or a Lodige mixer, and then roll-mill or After melt-kneading with a kneader, it may be manufactured by a method of obtaining a final powder product through a cooling and grinding process.

The epoxy resin composition for sealing a semiconductor device described above can be usefully applied to a semiconductor device, particularly a semiconductor device mounted on a mobile display or a fingerprint sensor of a vehicle. As a method of sealing a semiconductor element using the above-described epoxy resin composition for sealing a semiconductor element, a low pressure transfer molding method can be generally used. However, molding may also be performed by a method such as injection molding or casting.

According to another aspect, a semiconductor device sealed using the above-described epoxy resin composition for sealing semiconductor elements is disclosed.

Hereinafter, for example, the epoxy resin composition for semiconductor device sealing according to an embodiment of the present invention will be described in more detail. However, this is provided as an example of the present invention, and in no way can be interpreted as limiting the present invention.

Example

Specific specifications of the components used in Examples and Comparative Examples are as follows.

(A) Epoxy resin: EPPN-501HY (Nippon Kayaku)

(B) Curing agent: HE100C-10 (Air Water)

(C) Inorganic filler: 9:1 (weight ratio) mixture of spherical fused silica having an average particle diameter (D ₅₀ ) of 20 μm and spherical fused silica having an average particle diameter (D ₅₀ ) of 0.5 μm.

(D) Acrylic ester polymer: SG-80H (Nagase ChemteX)

(E) Silicone fluid: SF-8427 (Dow Corning Toray)

(F) Curing accelerator: TPP-k (Hokko Chemical)

(G) Coupling agent: A-187 (Momentive)

(H) Coloring agent: MA-100R (Mitsubishi Chemical Corporation)

(I) Ion trapping agent: DHT-4A (Kyowa)

(J) Mold release agent: Carnauba wax

Examples 1 and 2 and Comparative Examples 1 to 3

Each component was weighed according to the composition of Table 1 below, and then mixed to prepare an epoxy resin composition for sealing a semiconductor device. In Table 1, the unit of use of each composition is% by weight.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 (A) 5.834 4.993 6.395 5.273 5.834 (B) 4.099 3.508 4.493 3.705 4.099 (C) 88 88 88 88 88 (D) 0.5 2 - 2 - (E) 0.5 0.5 - - One (F) 0.467 0.399 0.512 0.422 0.467 (G) 0.3 0.3 0.3 0.3 0.3 (H) 0.2 0.2 0.2 0.2 0.2 (I) 0.05 0.05 0.05 0.05 0.05 (J) 0.05 0.05 0.05 0.05 0.05

The physical properties of the epoxy resin compositions of Examples and Comparative Examples prepared as described above were measured according to the following physical property evaluation methods. Table 2 shows the measurement results.

Method for evaluating physical properties

(1) Fluidity (unit: inch): Flow length was measured using a transfer molding press at 175°C and 70 kgf/cm ² using an evaluation mold according to EMMI-1-66.

(2) Coefficient of linear expansion (unit: ppm/°C): evaluated according to ASTM D696. The linear expansion coefficient at a temperature below the glass transition temperature was evaluated as CTE1, and the linear expansion coefficient at a temperature above the glass transition temperature was evaluated as CTE2.

(3) Curing shrinkage (unit: %): Molded specimen (125mm×12.6mm×6.4mm) using transfer molding press at 175℃ and 70kgf/cm ² using ASTM mold for flexural strength specimen production ). The obtained specimen was placed in an oven at 175°C and post-cured (PMC) for 600 seconds, then cooled and the length of the test piece was measured with a caliper. The curing shrinkage was calculated from Equation 1 below.

<Equation 1>

Curing shrinkage (%) = (mold length at 175°C-length of test piece) ÷ (mold length at 175°C) × 100

(4) Glass transition temperature (Tg, unit: ℃): was measured using a thermomechanical analyzer (TMA). At this time, the TMA was set to a condition of increasing the temperature by 10°C per minute at 25°C to 300°C.

(5) Modulus of elasticity (unit: GPa at 25°C, MPa at 260°C): Epoxy resin composition is cured under conditions of mold temperature 175°C±5°C, injection pressure 1000psi±200psi, curing time 120 seconds using a transfer molding machine Specimens (20 mm x 13 mm x 1.6 mm) were molded. After the specimens were cured after 2 hours in a 175°C±5°C hot air dryer, the elastic modulus was measured using a Q8000 (TA company) with a dynamic mechanical analyzer (DMA). When measuring the elastic modulus, the heating rate was 5°C/min. The temperature was increased from -10°C to 300°C, and values at 25°C and 260°C were obtained as the elastic modulus.

(6) Bending (unit: μm): a composition prepared in Examples and Comparative Examples using a multi plunger system (MPS) molding machine to form a transfer molding at 175° C. for 70 seconds to include a copper metal element with a width of 24 mm, An eTQFP (exposed thin quad flat package) package having a length of 24 mm and a thickness of 1 mm was produced. Thereafter, the produced package was cured after 4 hours at 175°C, and then cooled to 25°C. Then, the eTQFP package was measured for the height difference between the center of the diagonal direction of the top surface and the edge of the edge using a non-contact laser meter.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 liquidity 38 35 39 30 43 Linear expansion
Coefficient CTE1 7.1 5.5 10 5.8 9 CTE2 40 41 40 41 41 Curing shrinkage 0.06 0.04 0.11 0.03 0.08 Tg 167 168 168 167 167 Modulus of elasticity ＠25℃ 15.7 15.9 16.5 16.4 15.5 ＠260℃ 975 966 978 961 954 warp 1,100 950 1,200 960 1,150

As shown in Table 2, the epoxy resin composition of the present invention was able to improve the warpage by simultaneously lowering the coefficient of linear expansion at a glass transition temperature or less and the modulus of elasticity at 25°C without significantly lowering fluidity.

On the other hand, Comparative Example 1, which did not include both the acrylic ester polymer and silicone fluid of the present invention, had high curing shrinkage, CTE1, elastic modulus at 25°C, and warpage. And, Comparative Example 2 without the silicone fluid of the present invention was poor in fluidity, and the effect of reducing the elastic modulus at 25°C was weak. And, Comparative Example 3 without the acrylic ester polymer of the present invention has a weak curing shrinkage, CTE1 and warpage reduction effect.

Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (7)

An epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, an inorganic filler, an acrylic ester polymer, and a silicone fluid.
According to claim 1,
The acrylic ester polymer is an epoxy resin composition for sealing a semiconductor device including at least one functional group among carboxyl group, hydroxyl group, epoxy group and amide group.
According to claim 1,
The silicone fluid is an epoxy resin composition for sealing a semiconductor device comprising a polyether-modified silicone-based compound.
According to claim 1,
The weight ratio of the acrylic ester polymer and the silicone fluid is 1:1 to 4:1, an epoxy resin composition for sealing a semiconductor device.
According to claim 1,
The total amount of the acrylic ester polymer and the silicone fluid in the composition is 0.1 to 5% by weight of an epoxy resin composition for semiconductor device sealing.
According to claim 1,
0.5 to 20% by weight of the epoxy resin;
0.1 to 13% by weight of the curing agent;
70 to 95% by weight of the inorganic filler;
0.1 to 5% by weight of the total amount of the acrylic ester polymer and the silicone fluid; Epoxy resin composition for sealing a semiconductor device comprising a
A semiconductor device sealed using the epoxy resin composition for sealing a semiconductor device according to any one of claims 1 to 6.