KR20200075954A - Growth device for silicon carbide single crystal - Google Patents

Abstract

Provided is an apparatus for growing silicon carbide single crystal with high yield while suppressing the growth of poly-crystals around at least a guide and an ingot, based on various optimization designs such as improving a material or a structure of the guide (means) in a crucible. The silicon carbide single crystal growth apparatus of the present invention includes: a crucible in which raw materials are loaded and heated; a seed crystal provided on an upper side of the crucible; and, a guide device provided to be spaced apart from the seed crystal in the crucible. The guide device includes a first guide on the side of the seed crystal and a second guide integrally formed with the first guide. At least the first guide may be provided with graphite having a higher porosity than that of the second guide.

Description

Silicon carbide single crystal growth device{GROWTH DEVICE FOR SILICON CARBIDE SINGLE CRYSTAL}

The present invention relates to a silicon carbide single crystal growth apparatus, and more specifically, based on various optimization designs of a guide in a device (crucible), at least while suppressing polycrystalline growth around the guide and ingot, while increasing the yield of the silicon carbide single crystal growth apparatus It is about.

Silicon carbide (SiC) single crystal is a material that is being actively researched and developed as a substrate for next generation power semiconductor devices. It is known that the band gap is 3 times and the dielectric breakdown strength is 9 times or more compared to the existing silicon (Si) substrate.

Accordingly, a semiconductor using a silicon substrate can be used for high power consumption, and loss in energy conversion can be minimized. In addition, when the silicon carbide device is operated at a high temperature, it is possible to prevent element destruction due to heat escape, and simplification of the cooling device is expected. Accordingly, it can be used as a next-generation power semiconductor device to replace silicon carbide.

However, the silicon carbide single crystal grown by the sublimation method forms many crystallographic defects and carbon intrusion defects during growth, and since these defects cause problems in device fabrication in the future, low defect single crystal growth is required.

For example, a technique for suppressing polycrystalline growth in a guide or an ingot as much as possible has been required through various optimization designs, such as improving the material or structure of a guide in a crucible.

Meanwhile, KR 10-1744287 B1 (2017.05.31) discloses a guide in a silicon carbide single crystal growth apparatus, but does not reflect various optimization designs of the required guide.

For example, the registered patent uses only a guide made of porous graphite, in this case, the gas sublimed from the powder located at the bottom of the crucible escapes to the outer shell, and there is a problem in that the yield is lowered because it does not contribute to single crystal growth.

For example, as will be described in detail below, the present invention satisfies the above-described required technology, which reflects various optimization designs, such as improving the material or structure of the guide in the crucible, which solves the problem of the registered patent.

KR 10-1744287 B1 (2017.05.31)

The present invention has been devised to solve the above-described conventional problems, and its purpose is to reflect the optimization design through improvement of the material or various structures of the guide means inside the crucible, while suppressing polycrystalline growth at least in the guide or ingot. , It is to provide a silicon carbide single crystal growth apparatus capable of minimizing the escape of sublimation gas to the outer shell, ultimately enabling high-quality single crystal ingot growth without lowering yield.

In order to achieve the above object, the silicon carbide single crystal installation apparatus of the present invention in one embodiment of the technical aspect, a crucible in which raw materials are charged and heated inside; and seed crystals provided on an upper side of the crucible; And guide means provided spaced apart from the seed crystal inside the crucible; the guide means comprising: a first guide on the seed crystal side; And, a second guide integrally formed on the first guide; including, but at least the first guide, may be formed of graphite having a higher porosity than the second guide.

Preferably, the first guide may be formed of porous graphite having a density of 1 to 1.4 g/cm 3, and the second guide may be formed of high density graphite having a density of 1.70 to 1.90 g/cm 3.

More preferably, the porous graphite of the first guide and the high-density graphite of the second guide may have a purity of 99% or more.

In addition, a silicon carbide single crystal installation apparatus of the present invention of another embodiment of the technical aspect, a crucible in which a raw material is charged and heated; and a seed crystal provided on an upper side of the crucible; And guide means provided spaced apart from the seed crystal inside the crucible; the guide means comprising: a first guide on the seed crystal side; And, a second guide integrally formed on the first guide; including, the first guide may have a set length.

Preferably, the first guide is formed of porous graphite, and the second guide is formed of high-density graphite, and the set length of the first guide may be 5 to 10 mm.

In addition, the silicon carbide single crystal installation apparatus of the present invention of another embodiment of the technical aspect, a crucible in which a raw material is charged and heated therein, and a seed crystal provided on an upper side of the crucible; And guide means provided spaced apart from the seed crystal inside the crucible; the guide means comprising: a first guide on the seed crystal side; And, a second guide integrally formed with the first guide; but the first and second guides may have different setting angles.

Preferably, the first guide is formed of porous graphite, the second guide is formed of high-density graphite, the first guide is inclined at an angle of 10 degrees or less with respect to the vertical line, and the second guide is a vertical line It can be inclined at an angle of 30~45˚.

More preferably, the distance between the first guide and the seed crystal of the porous graphite may be 1 to 5 mm.

More preferably, in the other embodiments, the first guide is formed of porous graphite having a density of 1 to 1.4 g/cm 3, and the second guide is high density graphite having a density of 1.70 to 1.90 g/cm 3 It can be formed as.

More preferably, the second guide of the guide means may be formed of an inclined portion integrally formed below the first guide and a cylindrical portion of the inner surface side of the crucible integrally formed below the inclined portion.

More preferably, the inclined portion of the second guide may be inclined at an angle of 30 to 45 degrees based on the vertical line.

More preferably, a seed crystal holder provided with the seed crystal attached to the upper side of the crucible, a heat insulating material surrounding the crucible and a quartz tube outside it, and a heating means provided to heat the crucible outside the quartz tube further It can contain.

According to the present invention as described above, through optimization of the material or various structures of the crucible (reactor) internal guide, an optimized design is implemented.

That is, the present invention has the effect of suppressing polycrystalline growth in a guide or ingot as much as possible, and at the same time minimizing the sublimation gas from escaping to the outer shell, ultimately suppressing polycrystalline growth around a single crystal ingot without lowering yield Is to provide.

In addition, the present invention does not occur polycrystalline deposition on the guide inside the crucible, the guide during operation for single crystal growth maintains its shape, and provides other effects that enable ingot growth in a flat shape with better quality. will be.

1 is a schematic diagram showing the overall configuration of a silicon carbide single crystal growth apparatus according to the present invention.
Figure 2 is a main part of Figure 1 showing the guide means in the silicon carbide single crystal growth apparatus of the present invention of Figure 1
Figure 3 is an enlarged view of Figure 2 showing one embodiment of the guide means of the present invention device
Figure 4 is a main part of Figure 1 showing another embodiment of the guide means of the present invention device
Figure 5 is a photograph showing a guide means according to the present invention device
6 is a photograph showing a grown silicon carbide single crystal according to an embodiment of the present invention device
7 is a photograph showing a grown silicon carbide single crystal according to Comparative Example 1 of the present invention
8 is a photograph showing a grown silicon carbide single crystal according to Comparative Example 2 of the present invention
9 is a photograph showing a grown silicon carbide single crystal according to Comparative Example 3 of the present invention

Hereinafter, the present invention will be described in detail through exemplary drawings. In adding reference numerals to the components of each drawing, it should be noted that the same components have the same reference numerals as possible even though they are displayed on different drawings.

In addition, in describing the present invention, when it is determined that detailed descriptions of related well-known structures or functions may obscure the subject matter of the present invention, detailed descriptions thereof will be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail.

First, FIG. 1 shows the entire configuration of a silicon carbide single crystal growth apparatus 100 according to the present invention.

In other words, as shown in Figure 1, the silicon carbide single crystal growth apparatus 100 of the present invention, the silicon carbide single crystal raw material 110 is largely charged and heated in the crucible 120 and the crucible 120 of the inside It may include a seed crystal holder 140 provided on the upper side and the silicon carbide seed crystal 130 is attached, and guide means 200 provided spaced apart from the seed crystal 130 inside the crucible.

In addition, more preferably, the insulating material 150 surrounding the crucible 120 and the quartz tube 160 on the outside thereof, and further comprising heating means 170 provided to heat the crucible outside the quartz tube. Can. At this time, the heating means 170 may be a high frequency induction coil.

Accordingly, as shown in FIG. 1, the internal powder raw material 110 of the crucible 120 heated by the heating means 170 is sublimed, and the gas from which the raw material is sublimated is the seed crystal holder along the guide means 200 ( 140) is deposited on the seed crystal 130 on the side (aka'seed') to grow a single crystal.

On the other hand, in general, as the single crystal growth progresses, the length of the single crystal ingot increases, and at this time, a guide provided inside the crucible 120, that is, the guide means 200 of the present invention is used to control the shape of the ingot.

At this time, when the temperature of the guide is lower than the surface temperature of the ingot, as described in detail below, polycrystals are grown on the outside of the ingot.

Further, the gas sublimed at the time of single crystal growth causes single crystals to grow on the seed crystal region, but polycrystalline crystals grow on the inner wall of the guide.

Particularly, since the guide portion adjacent to the seed crystal has a lower temperature, intensively, polycrystals are formed, and a polycrystal having a faster growth rate than the single crystal covers the single crystal, thereby deteriorating the crystal quality.

On the other hand, when a guide made of a porous graphite material is used, it is possible to suppress the growth of polycrystals around the single crystal ingot by escaping the gas outwardly (ingot) before the sublimated gas is deposited as polycrystalline.

However, when the guide is formed only of the porous graphite material, the gas sublimated from the powder located at the bottom of the crucible easily escapes from the porous portion to the outside of the ingot, and consequently, it does not contribute to the growth of the single crystal and lowers the yield.

In addition, due to the high-frequency heating characteristic, the temperature of the outer portion of the powder is high, so that the sublimation of the powder is active in the outer shell, and the sublimed gas is easily escaped through the guide.

Thus, the present invention is intended to solve the problem of the guide (only as described above [Patent Document]) made of a porous graphite material having the above-mentioned problems, and is basically made of porous graphite that suppresses polycrystalline growth and only porous graphite. In this case, since the amount of sublimation gas escaping to the outside of the ingot increases, it is based on a guide means of a composite structure of high density graphite integrated with porous graphite.

That is, the porous graphite and the high-density graphite composite guide means 200 provided inside the crucible 120 of the present invention suppresses the growth of polycrystals and minimizes the sublimation gas from escaping to the outer shell so that the single crystal is not reduced in yield. It will make it possible to suppress polycrystalline growth around the ingot.

Accordingly, hereinafter, the guide means 200 according to the present invention for guiding the sublimation gas from the silicon carbide single crystal growth apparatus 100 to the seed crystal 130 will be described in more detail.

First, FIGS. 2 and 3 show guide means 200 of one embodiment of the device 100 of the present invention, and FIG. 4 shows guide means 200 of another embodiment of the device 100 of the present invention. . For reference, FIG. 5 schematically shows the guide of the present invention with photographs.

For example, as shown in Figures 2 and 3, the guide means 200 of the embodiment of the present invention, the first guide 210 of the seed crystal 130 side, and the first guide 210 downward The second guide 220 is integrally formed, and particularly, the first guide 210 may be formed of graphite having a higher porosity than the second guide 220.

Therefore, since the guide means 200 of the present invention has at least an upper first guide 210 that has a higher black surface porosity than the lower second guide 220 (because the density is higher), the sublimation gas has a higher porosity. The low (density) second guide 220 does not escape to the outside, and the first guide 210 of porous graphite having a porosity higher than that of the second guide 220 allows sublimation gas to pass through the guide. This is to prevent polycrystalline formation and enable ingot growth without polycrystalline intrusion.

Preferably, the first guide 210 may be formed of porous graphite having a density of 1 to 1.4 g/cm 3, and the second guide 220 may be formed of high density graphite having a density of 1.70 to 1.90 g/cm 3 can do.

More preferably, the porous graphite of the second guide 210 and the high-density graphite of the first guide 220 are formed to have a purity of 99% or more.

Meanwhile, in the case of graphite of the first and second guides 210 and 220, density, porosity, and gas permeability have a linearly proportional correlation.

For example, if the porosity of the porous graphite of the first guide 210 is too low (lower than the above range), the sublimation gas is not sufficiently transmitted, and as described above, polycrystals may be formed inside the guide.

In particular, when the growing ingot and the polycrystalline formed inside the guide meet, the growth rate of the polycrystalline is faster than that of the single crystal, so that the polycrystal is easily formed on the outside of the ingot.

Conversely, if the porosity of the porous graphite of the first guide 210 is too large (greater than the above range), or when the entire guide means 200 of the present invention is formed only of porous graphite, the sublimated gas is externally It easily escapes and deposits in polycrystalline form in the pocket (180 in FIG. 1).

As a result, the sublimed gas does not contribute to the growth of the single crystal, and grows the crystal in a region other than the seed crystal, which will degrade the actual single crystal yield.

For example, the gas sublimed from the powder during single crystal growth consists of Si, Si2C, and SiC2, and the composition of the gas is determined by the temperature of the powder.

And, among the sublimation gases, Si has the highest partial pressure at all temperatures and the highest reactivity, so that it reacts with the inner wall of the crucible (reactor) or guide (means) 200, which is a carbon material. When the porosity of the porous graphite is too large, the guide is easily damaged by the reaction with the sublimation gas, thereby preventing the role of controlling the formation of the ingot properly, and eventually forming the polycrystalline outer shell.

Next, the second guide 220 integrally formed under the first guide 210 of the guide means 200 of the present invention may be formed of high density graphite having a density of 1.70 to 1.90 g/cm 3, The highest-density product among the currently produced graphites is 1.92 (TOKAI Carbon G348), so it is difficult to apply high-density graphite larger than the above range.

In addition, when the density of the graphite of the second guide 220 is lower than 1.7 g/cm 3, it easily reacts with Si gas generated at a high temperature to cause damage to the guide, which guides the sublimation gas to the seed crystal. Will lose its function.

Deum, in the guide means 200 of the present invention shown in Figures 2 and 3, the first guide 210 of the porous graphite and the second guide 220 of the high-density graphite described above are preferably 99% or more in purity.

That is, the reason that the purity of the porous graphite and the high-density graphite of the guides 210 and 220 is 99% or more is because high-purity graphite can be used to prevent contamination during single crystal growth of silicon carbide as much as possible.

Therefore, in the case of the guide means 200 of the present invention described so far, it is based on the first guide 210 of the high-purity porous graphite and the second guide 220 of the high-purity high-density graphite, and the appropriate density range and purity. Therefore, it is possible to suppress the growth of polycrystals and at the same time minimize the escape of sublimation gas to the outside, thereby suppressing the growth of polycrystals around the single crystal ingot without lowering yield.

Next, as shown in FIG. 2, the seed crystal attached to the first guide 210 (top) and the holder 140 of the porous graphite of the guide means 200 in the silicon carbide single crystal growth apparatus 100 of the present invention The interval between 130 is preferably 1 to 5 mm.

For example, when the distance between the first guide 210 and the seed crystal 130, which is porous graphite, is too long (when larger than the above range), there may be a problem that polycrystalline growth increases due to simultaneous growth of polycrystals with single crystals. have.

Conversely, if the distance between the first guide 210 and the seed crystal 130 is too short (if it is smaller than the above range), the flow of sublimation gas is blocked to induce polycrystalline growth, or it is difficult to control the shape of the ingot to make it concave. , Or a problem with the growth of a crown-shaped ingot.

For example, in order to obtain a high quality substrate, the shape of the grown silicon carbide ingot may be flat or slightly convex.

Next, as shown in Figures 3 and 4, the first guide 210, 210' of the porous graphite described above in the guide means 200 of the present invention is provided to have a set length (L).

At this time, the first guide 210 of the porous graphite of FIG. 3 and the first guide 210' of the porous graphite of FIG. 4 have different set angles (X) (Z), and are independent of the set length (L). Do.

For example, preferably, the set length L of the first guide (210 in FIG. 3) (210' in FIG. 4) of the porous graphite may be formed to 5 to 10 mm.

For example, the length of a commercially grown ingot is unknown, but the length of the ingot may be 15 to 25 mm, and the shape of the ingot may have a slightly convex shape.

By the way, when the ingot is grown, if the set length L of the first guides 210 and 210' of the porous graphite is too short (less than the above range), polycrystals are initially deposited on the guides. Since the growth rate of the polycrystal is faster than that of the single crystal, it is possible to make it difficult to manufacture a high-quality ingot by penetrating the outer shell of the growth ingot.

Conversely, if the set length (L) of the first guides 210 and 210' of the porous graphite is set too long (larger than the above range), the amount of sublimation gas escaping outward through the porous portion increases, thereby increasing the ingot. This becomes convex, and consequently, yield decrease and stress occur in the ingot, making it difficult to manufacture a high quality ingot.

Next, in FIG. 3, in the guide means 200 of the apparatus 100 of the present invention, the first and second guides having different set angles (inclination angles) (X) (Y) based on the vertical line C 210) 220.

On the other hand, the first guide 210 is adjacent to the seed crystal 130, the second guide 220 is formed integrally with the first guide 210 in a downward direction, the second guide 220 ) May be made of an inclined portion 222 integral with the first guide 210 and a cylindrical portion 224 on the inner surface side of the crucible 120 integrally downward.

That is, the second guide 220 may be formed of a cylindrical portion 224 parallel to the inner surface of the crucible 120 and an inclined portion 222 integrally inclined from the cylindrical portion 224.

The cylindrical portion 224 will face the crucible 120 to secure the overall crucible arrangement of the guide means 200, and the inclined portion 222 will perform the basic role of a guide called seed crystal guide of sublimation gas. will be.

At this time, as shown in FIG. 4, both the inclination angles Z of the first guide 210 and the second guide 220 may be formed at about 45 degrees based on the vertical line C.

However, preferably when using the guide means 200 of the present invention, which is a composite structure of the first guide 210 of porous graphite and the second guide 220 of high density graphite, the first guide 210 and the second guide The inclined portions 222 of 220 are to have different set angles (inclination angles) (X) (Y) based on vertical lines.

More preferably, the set angle (inclination angle) X of the first guide 210 of the porous graphite based on the vertical line C of the inclined portion 222 of the second guide 220 of the high-density graphite It may be formed to be smaller than the set angle (tilt angle) (Y).

In this case, since the amount of sublimation gas escaping to the outer shell through the first guide 210 can be minimized, polycrystalline deposition will be reduced as a result.

For example, preferably, as shown in Figure 3, the first guide 210 of the porous graphite is inclined at an angle (X) of 10 degrees or less with respect to the vertical line (C), the second guide 220 The inclined portion 222 is to incline at an angle Y of 30 to 45 degrees based on the vertical line C.

For example, if the inclination angle (X) of the first guide 210 is greater than the above range (if it is greater than 10°), the amount of sublimation gas escapes to the outer shell will be large, resulting in lower yield.

And, if the angle (Y) of the inclined portion 222 of the second guide 220 is greater than the above range (if its inclination is too steep), the gas sublimated from the powder is intactly collected as seed crystals and guided efficiently. It becomes difficult, and, conversely, if it is lower than the above range, there is a possibility that polycrystals are grown in the guide.

Next, specific examples and comparative examples of the present invention will be described below. Of course, this is only one preferred embodiment of the present invention, and it is natural that it is not necessarily limited to this embodiment.

[Example]

In an embodiment, a first guide 210 of porous graphite having a density of 1 to 1.4 g/cm 3 and a second guide 220 of high density graphite having a density of 1.70 to 1.90 g/cm 3 disposed inside the crucible 120 The silicon carbide single crystal was grown using the silicon carbide single crystal growth apparatus 100 according to the present invention described with reference to FIG. 1 in which the combined guide means 200 was installed. The distance between the first guide 210 and the seed crystal 130 was 2 mm. At this time, the growth method of the silicon carbide single crystal is as follows.

First, a 4H-SiC seed was used as the seed crystal 130. However, the present invention is not limited thereto, and various types of seed crystals (3C-SiC, 15R-SiC, etc.) may be used as long as silicon carbide single crystals can be grown.

And, as the seed crystal 130, a circular seed crystal having a diameter of 4 inches was used. The diameter of the seed crystal can be appropriately adjusted according to the crucible size.

Thereafter, the seed paste was attached to the seed crystal holder using the carbon paste as an adhesive. However, the adhesive means may be used not only carbon paste, but also various adhesives capable of attaching seed crystals to the top surface of the seed crystal holder 140 such as sugar and photoresist.

Subsequently, the seed crystal holder 140 to which the seed crystal was attached was charged into the growth apparatus and mounted inside the upper side (ceiling side) of the crucible 120. Then, a silicon carbide single crystal raw material 110, for example, SiC powder, was charged inside the crucible 120. Thereafter, the impurities contained in the crucible were removed by heating at a temperature of 1400° C. and a vacuum pressure for 3 hours.

Next, inert argon gas (Ar) was injected to remove air remaining inside the crucible 120 and between the crucible 120 and the heat insulating material 150. Then, after raising the pressure to atmospheric pressure, the crucible 120 was heated to about 2,200° C. using a heating means 170. Here, the reason for maintaining the atmospheric pressure is to prevent the generation of unwanted crystals in the early stage of crystal growth.

The single crystal raw material 110 was heated to a growth temperature of 2,200 to 2,400°C while maintaining atmospheric pressure. Thereafter, the inside of the growth apparatus was reduced to 30 mbar and maintained at a growth pressure, while the single crystal raw material was sublimed to grow a single crystal.

Meanwhile, the grown single crystal photograph is shown in FIG. 6. As can be seen in FIG. 6, it can be seen that high-quality silicon carbide single crystals were grown without polycrystalline growth.

In addition, as shown in FIG. 6, there is no deposition of polycrystalline in the crucible inner guide (means), and there is some damage to the guide due to sublimation gas, but maintains its shape, so that the ingot growth of a flat shape without the formation of polycrystals on the outside of the single crystal It can be seen that induction.

[Comparative Example 1]

Comparative Example 1 uses a silicon carbide single crystal growth apparatus 100 in which a guide 200 of porous graphite having a density of 1.8 g/cm 3 and a small porosity of less than 5% is installed inside the crucible 120 in FIG. 1. A silicon carbide single crystal was grown in the same manner as in the above-described example except for the point.

A photograph of the grown single crystal of Comparative Example 1 is shown in FIG. 7. As can be seen in FIG. 7, it can be seen that some of the polycrystals grew on the outer side of the grown single crystal. This is a result of forming polycrystals on the outside of the ingot because polycrystals are deposited on the guides, the ingots grown and the polycrystals formed on the guides meet, and the growth rate of the polycrystals is faster than the single crystal growth rate.

[Comparative Example 2]

In Comparative Example 2, except that the silicon carbide single crystal growth apparatus 100 in which the guide 200 made of only porous graphite having a density of 1 to 1.4 g/cm 3 was installed in the crucible 120 in FIG. 1 was used, Silicon carbide single crystals were grown in the same manner as in the examples.

Meanwhile, the grown single crystal photograph is shown in FIG. 8. As can be seen in FIG. 8, the single crystal grew without polycrystalline growth, but it did not contribute to the sublimated single crystal growth, and it was found that the convex-shaped ingot grew out of the outer shell. In addition, it was confirmed that the guide was damaged during long-term growth.

[Comparative Example 3]

Comparative Example 3 except that the silicon carbide single crystal growth apparatus 100 in which a guide 200 of porous graphite having a density of 1 g/cm 3 and a porosity of 85% was installed inside the crucible 120 in FIG. 1 was used. In the same manner as in the above example, silicon carbide single crystals were grown.

For example, a photograph of the grown single crystal is shown in FIG. 9. As can be seen in Figure 9, it was found that not only the grown single crystal outer shell, but also a large number of polycrystals grew on the single crystal. In addition, it was confirmed that the guide was damaged by the reaction between the Si sublimation gas and the guide having a large porosity.

For example, the photo on the left in FIG. 8 shows the initial shape of the guide used for single crystal growth. In the middle photograph of FIG. 8, it can be seen that normal single crystal ingot growth was not achieved due to damage to the guide generated during single crystal growth. The photo on the right in FIG. 8 shows that as the growth continued, the entire guide was damaged, and the residue remained on top of the silicon carbide powder.

Accordingly, the silicon carbide single crystal growth apparatus 100 of the present invention described so far reflects an optimization design through material or various structural improvements of the guide 200 inside the crucible.

Therefore, in the case of the present invention, there is no polycrystalline deposition on the crucible inner guide, and there may be some damage to the guide by the sublimation gas, but it maintains its shape, enabling flat ingot growth without the formation of polycrystals on the outside of the single crystal. Is to do.

As a result, the present invention provides an effect that enables growth of SiC single crystal, no polycrystalline growth, and ultimately enables high quality silicon carbide single crystal growth.

In addition, in the case of the present invention, the amount of sublimation gas escaping to the outer shell without polycrystalline is also reduced, ultimately increasing the yield.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention.

Therefore, the embodiments disclosed in the present specification and drawings are not intended to limit the technical spirit of the present invention, but to describe the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments.

The scope of protection of the present invention should be interpreted by the following claims, and all technical spirits within the equivalent range should be interpreted as being included in the scope of the present invention.

100....silicon carbide single crystal growth device 110....
120....crucible 130....silicon carbide seed crystals
140....seed holder 150....insulation
160.... quartz tube 170.... heating means
200.... Guide means 210.... 1st guide
220....Second guide 222....Slope of the second guide
224....cylindrical part of the second guide
L....Setting length of the first guide
X.... Set angle on the vertical line of the first guide
Y.... Set angle on the vertical line of the second guide (inclined part)

Claims (12)

A crucible in which raw materials are charged and heated inside;
Seed crystals provided on the upper side of the crucible; And,
Guide means provided spaced apart from the seed crystal inside the crucible;
It comprises,
The guide means includes a first guide on the seed crystal side and a second guide integrally formed on the first guide, wherein the first guide is at least a silicon carbide single crystal growth formed of graphite having a higher porosity than the second guide Device.
According to claim 1,
The first guide is formed of porous graphite having a density of 1 to 1.4 g/cm 3,
The second guide is a silicon carbide single crystal forming apparatus formed of high density graphite having a density of 1.70 to 1.90 g/cm 3.
According to claim 2,
The porous graphite of the first guide and the high-density graphite of the second guide are silicon carbide single crystal crystallizers having a purity of 99% or more. A crucible in which raw materials are charged and heated inside;
Seed crystals provided on the upper side of the crucible; And,
Guide means provided spaced apart from the seed crystal inside the crucible;
It comprises,
The guide means includes a first guide on the seed crystal side and a second guide integrally formed on the first guide, wherein the first guide is a silicon carbide single crystal growth apparatus having a set length (L).
According to claim 4,
The first guide is formed of porous graphite, the second guide is formed of high-density graphite, the set length (L) of the first guide is a silicon carbide single crystal growth apparatus of 5 to 10 mm.
A crucible in which raw materials are charged and heated inside;
Seed seeds provided on the upper side of the crucible; And,
Guide means provided spaced apart from the seed crystal inside the crucible;
It comprises,
The guide means includes a first guide on the seed crystal side and a second guide integrally formed on the first guide, wherein the first and second guides are silicon carbide single crystals having different set angles (X)(Y). Growth device.
The method of claim 6,
The first guide is formed of porous graphite, the second guide is formed of high-density graphite, the first guide is inclined at an angle (X) of 10 degrees or less relative to the vertical line, and the second guide is a vertical line. A silicon carbide single crystal growth device inclined at an angle (Y) of 30 to 45˚ as a standard.
The method of any one of claims 2, 5, and 7,
The silicon carbide single crystal growth apparatus having a spacing between the first guide and the seed crystal of the porous graphite is 1 to 5 mm.
The method of claim 5 or 7,
The first guide is formed of porous graphite having a density of 1 to 1.4 g/cm 3,
The second guide is a silicon carbide single crystal growth apparatus formed of high density graphite having a density of 1.70 to 1.90 g/cm 3.
The method according to any one of claims 1, 4, and 6,
The second guide of the guide means includes an inclined portion integrally formed below the first guide; And,
A cylindrical portion integrally formed below the inclined portion and on the inner surface side of the crucible;
Silicon carbide single crystal growth device consisting of.
The method of claim 10,
The inclined portion of the second guide is a silicon carbide single crystal growth apparatus inclined at an angle (Y) of 30 to 45˚ based on a vertical line.
The method according to any one of claims 1, 4, and 6,
A seed crystal holder provided with the seed crystal attached to an upper side of the crucible;
An insulating material surrounding the crucible and a quartz tube outside the crucible; And,
Heating means provided to heat the crucible out of the quartz tube;
Silicon carbide single crystal forming apparatus further comprising a.

Images