KR20200069975A - Light emitting device package - Google Patents

Abstract

According to an embodiment of the present invention, disclosed is a light emitting element package which comprises: a substrate including a first conductive portion, a second conductive portion, and a first insulating portion disposed between the first conductive portion and the second conductive portion; a first metal layer disposed on the first conductive portion; a second metal layer disposed on the second conductive portion; and a light emitting element including a first pad electrically connected to the first metal layer, a second pad electrically connected to the second metal layer, and a light emitting structure disposed on the first pad and the second pad. The first and second metal layers include first and second protrusion units protruding from an upper surface toward the light emitting structure, respectively. The first and second protrusion units are spaced apart from the first and second pads, respectively.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The embodiment relates to a light emitting device package.

The light-emitting device including a compound such as GaN and AlGaN has many advantages such as having a wide and easy-to-adjust band gap energy, and thus can be variously used as a light-emitting device, a light-receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors are red, green, and green due to the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors, and low power consumption, semi-permanent life, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps , Has the advantages of safety and environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group 3 or 2-6 compound semiconductor material of a semiconductor, by developing a device material, light is absorbed in various wavelength regions to generate a photocurrent. Light from a variety of wavelengths can be used, from gamma rays to radio wavelengths. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Accordingly, the light emitting device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode tube (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to white light-emitting diode lighting devices, automobile headlights, traffic lights, and sensors that detect gas or fire. In addition, the application field of the light emitting device can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device that emits light in the ultraviolet wavelength band can be used for curing, medical, and sterilization by curing or sterilizing.

However, most light emitting device packages have a structure in which a package substrate is processed to form a cavity, a sub-mount and a light emitting device are disposed inside and covered with glass. However, the existing package structure including glass has a relatively weak light output, and there is a problem in that the unit cost of the package is increased by a sub-mount.

The embodiment may provide a light emitting device package capable of improving light output.

In addition, it is possible to provide a light emitting device package that can lower the package manufacturing cost.

In addition, a light emitting device package with improved heat dissipation performance can be provided.

The problem to be solved in the embodiment is not limited to this, and it will be said that the object or effect that can be grasped from the solution means or the embodiment of the problem described below is also included.

A light emitting device package according to an embodiment of the present invention includes: a substrate including a first conductive portion, a second conductive portion, and a first insulating portion disposed between the first conductive portion and the second conductive portion; A first metal layer disposed on the first conductive portion; A second metal layer disposed on the second conductive portion; And a light emitting device including a first pad electrically connected to the first metal layer, a second pad electrically connected to the second metal layer, and a light emitting structure disposed on the first pad and the second pad. The first and second metal layers include first and second protrusions protruding from the upper surface toward the light emitting structure, respectively, and the first and second protrusions are spaced apart from the first and second pads, respectively.

The light emitting device includes a light-transmitting layer, and an upper portion of the first protrusion and the second protrusion may be disposed between a bottom surface of the light-transmitting layer and a bottom surface of the light-emitting structure.

The light emitting device includes a light-transmitting layer, and an upper portion of the first protrusion and the second protrusion may be disposed between a lower surface of the light-transmitting layer and an upper surface of the light-transmitting layer.

The first protrusion may be disposed outside the first pad, and the second protrusion may be disposed outside the second pad.

The maximum width in the first direction from the first protrusion to the second protrusion may be greater than the maximum width in the first direction of the light emitting element.

The minimum width in the first direction from the first metal layer to the second metal layer may be the same as or greater than the width in the first direction of the first insulating portion.

The first metal layer may include a first mounting portion on which the first pad is disposed, and the first mounting portion may include a third projection formed in a separation region between the first pad and the first projection.

The first metal layer and the first pad may be subjected to eutectic bonding, and the second metal layer and the second pad may be subjected to eutectic bonding.

A first seed layer disposed between the first metal layer and the first pad and a second seed layer disposed between the second metal layer and the first pad may be included.

The first metal layer includes a first mounting portion on which the first pad is disposed, the second metal layer includes a second mounting portion on which the second pad is disposed, and the first mounting portion includes a plurality of third protrusions In addition, the second mounting portion may include a plurality of fourth protrusions, and the first insulating portion may include a fifth protrusion.

The third protrusion, the fourth protrusion and the fifth protrusion may be connected to each other on a plane.

A protection element electrically connected to the first conductive portion and the second conductive portion may be included.

The first conductive portion includes a first sidewall surrounding the light emitting element, the second conductive portion includes a second sidewall surrounding the light emitting element, and the first insulating portion includes the first sidewall and the second sidewall It can be placed between.

It may include a light-transmitting substrate disposed on the first sidewall and the second sidewall.

The first conductive portion includes a second insulating portion disposed at an edge where the side surface and the bottom surface are connected, and the second conductive portion includes a third insulating portion disposed at an edge where the side surface and the bottom surface are connected, and the first insulating portion. The part, the second insulating part, and the third insulating part may be connected to each other.

According to the embodiment, since the metal layer surrounds the side surface of the light emitting device, it is possible to effectively prevent penetration of external contaminants.

In addition, it is possible to omit the sub-mount and the like, thereby reducing the cost of manufacturing the package.

In addition, since a conductive substrate is used, heat of the light emitting device can be quickly released.

Various and beneficial advantages and effects of the present invention are not limited to the above, and will be more easily understood in the course of describing specific embodiments of the present invention.

1 is a perspective view of a light emitting device package according to an embodiment of the present invention,
2 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention,
Figure 3 is a modification of Figure 2,
4 is a plan view of a light emitting device package according to an embodiment of the present invention,
5A is a view showing a protrusion formed in a metal layer,
5B is a cross-sectional view showing a protrusion formed in a metal layer,
6 is an image of a substrate according to an embodiment of the present invention,
7 is an enlarged view of part A of FIG. 6,
8 is an enlarged view of part B of FIG. 6,
9 is a view of a light emitting device package according to another embodiment of the present invention,
10 is a view of a light emitting device package according to another embodiment of the present invention,
11 is a cross-sectional view of a light emitting device according to an embodiment of the present invention,
12 is a partially enlarged view of FIG. 11,
13 is a plan view of a light emitting device according to an embodiment of the present invention,
14 is a view showing the arrangement of a first ohmic electrode and a second ohmic electrode according to an embodiment,
15 to 19 are views illustrating a method of manufacturing a light emitting device package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical spirit of the present invention is not limited to some embodiments described, but may be implemented in various different forms, and within the technical spirit scope of the present invention, one or more of its components between embodiments may be selectively selected. It can be used by bonding and substitution.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless specifically defined and specifically described, can be generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and commonly used terms, such as predefined terms, may interpret the meaning in consideration of the contextual meaning of the related technology.

In addition, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In the present specification, a singular form may also include a plural form unless specifically stated in the phrase, and is combined with A, B, and C when described as "at least one (or more than one) of A and B, C". It can contain one or more of all possible combinations.

In addition, in describing the components of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used.

These terms are only for distinguishing the component from other components, and the term is not limited to the nature, order, or order of the component.

And, when a component is described as being'connected','coupled' or'connected' to another component, the component is not only directly connected to, coupled to, or connected to the other component, but also to the component It may also include the case of'connected','coupled' or'connected' due to another component between the other components.

Further, when described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is not only when the two components are in direct contact with each other, Also included is the case where one or more other components are formed or disposed between the two components. In addition, when expressed as "up (up) or down (down)", it may include the meaning of the downward direction as well as the upward direction based on one component.

1 is a perspective view of a light emitting device package according to an embodiment of the present invention, Figure 2 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention, Figure 3 is a modification of Figure 2, Figure 4 is a A plan view of a light emitting device package according to an embodiment of the invention.

1 and 2, a light emitting device package according to an embodiment includes a substrate 200 including a first conductive portion 201, a second conductive portion 202, and a first insulating portion 203, The first metal layer 310 disposed on the first conductive portion 201, the second metal layer 320 disposed on the second conductive portion 202, and the first metal layer 310 and the second metal layer 320 It may include a light emitting device 100 disposed on.

The light emitting device 100 may output light in an ultraviolet wavelength band. Illustratively, the light emitting device 100 may output light (UV-A) in the near-ultraviolet wavelength band, may output light (UV-B) in the far-ultraviolet wavelength band, or light in the deep ultraviolet wavelength band (UV- C) can be output. The wavelength range can be determined by the composition ratio of Al in the light emitting structure. In addition, the light emitting device 100 can output light of various wavelengths having different light intensities, and the peak wavelength of light having the strongest intensity compared to the intensity of other wavelengths among the wavelengths of light emitted is near ultraviolet or far ultraviolet. , Or deep ultraviolet rays.

For example, light (UV-A) in the near ultraviolet wavelength band may have a main peak in the range of 320 nm to 420 nm, and light (UV-B) in the far ultraviolet wavelength band may have a main peak in the range of 280 nm to 320 nm, Light (UV-C) of the deep ultraviolet wavelength band may have a main peak in a range of 100 nm to 280 nm. The light emitting structure may generate ultraviolet light having a maximum peak wavelength at a wavelength of 100 nm to 420 nm.

The substrate 200 may be manufactured by processing an aluminum substrate. Therefore, both the upper surface and the lower surface of the substrate 200 may have conductivity. Such a structure can have various advantages.

When the substrate 200 is made of aluminum, as in the present embodiment, the reflectance is high in the ultraviolet wavelength band, so that a separate reflective member can be omitted. In addition, since the substrate 200 itself is conductive, a separate circuit pattern and a lead frame can be omitted. In addition, since it is made of aluminum, thermal conductivity may be excellent from 140 W/m.k to 160 W/m.k. Therefore, the heat dissipation efficiency can also be improved.

However, the present invention is not limited thereto, and the substrate 200 may be made of a non-conductive material such as AlN or Al ₂ O ₃ , and may be appropriately used depending on the field to be applied. For example, an AlN material may be applied in an application field in which heat dissipation characteristics are highly important, and an Al ₂ O ₃ material may be applied in an application field in which reflection characteristics are important.

In addition, in the case of a COS (Chip on substrate) type that directly lowers the unit cost of a product by directly mounting the light emitting device 100 on the substrate 200, the size of the light emitting device 100 may not be limited. Accordingly, there is an advantage in that the UV light emitting device 100 having a large output can be variously mounted on the substrate 200 of the same size. In addition, the directivity angle can be formed wide, and since there is no separate optical member such as a light transmitting member, light output can be improved.

In one embodiment, when the substrate 200 is provided with a conductive material, the substrate 200 may include a first conductive portion 201 and a second conductive portion 202. A first insulating portion 203 may be disposed between the first conductive portion 201 and the second conductive portion 202. Since the first conductive portion 201 and the second conductive portion 202 are both conductive, the first insulating portion 203 needs to be disposed to separate the poles.

The first insulating part 203 may include all of various materials having insulating functions. Exemplarily, the first insulating portion 203 is a modified silicone resin composition such as EMC, white silicone, a photoimageable solder resist (PSR), a silicone resin composition, a silicone modified epoxy resin, a modified silicone resin composition such as epoxy modified silicone resin, poly Resin such as mid resin composition, modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, etc. Can be selected.

The width of the first insulating portion 203 may be 10 μm to 100 μm. When the width is 10 µm or more, the first conductive portion 201 and the second conductive portion 202 can be sufficiently insulated, and when the width is 100 µm or less, the problem that the size of the package becomes too large can be improved.

However, the structure of the substrate 200 is not necessarily limited thereto, and may be fabricated by stacking a plurality of insulating structures such as AlN Al ₂ O ₃ . In this case, a separate circuit pattern may be provided inside the substrate 200.

The first metal layer 310 and the second metal layer 320 may be disposed on the substrate 200. The first metal layer 310 may be disposed on the first conductive portion 201, and the second metal layer 320 may be disposed on the second conductive portion 202. The first metal layer 310 and the second metal layer 320 may be formed by a general plating method, but are not limited thereto.

The first metal layer 310 and the second metal layer 320 may include gold (Au). However, the first metal layer 310 and the second metal layer 320 are not necessarily limited to Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, It may also include at least one of Au and Hf. For example, the first metal layer 310 may include a Ni/Au layer.

The light emitting device 100 may include a first pad 153 disposed on the first metal layer 310 and a second pad 163 disposed on the second metal layer 320. The light emitting device 100 according to the embodiment may be of a flip chip type, but is not limited thereto. For example, the light emitting device 100 of a horizontal type may be flipped and mounted in a flip chip type.

The light emitting device 100 and the substrate 200 may be electrically connected by a bonding unit 17. The bonding portion 17 may be a eutectic bonding, or may be a bonding portion 17 using a conductive adhesive. For example, after placing the eutectic metal between the first metal layer 310 and the first pad 153 and between the second metal layer 320 and the second pad 163, heat is applied to apply the bonding. By configuring, the light emitting device 100 and the first and second metal layers 310 and 320 may be bonded. The eutectic metal may include AuSn, AgIn, etc., but is not limited thereto. When the light emitting device 100 and the first and second metal layers 310 and 320 are subjected to eutectic bonding, heat of the light emitting device 100 can be effectively discharged to stably secure package reliability.

In addition, the thermal stability between the light emitting device 100 and the first and second metal layers 310 and 320 is secured, such as a peeling phenomenon that may occur between the light emitting device 100 and the first and second metal layers 310 and 320. Can suppress mechanical problems. When the bonding portion 17 is a eutectic bonding, the bonding portion 17 is not shown in a separate configuration as in FIG. 2, and a part of the first and second pads 13 and 163 and the first and second metal layers 310 and 320 Can appear as an alloyed region.

In another embodiment, the bonding portion 17 may be a conductive adhesive. In the case of a conductive adhesive, any one of Sn, Ag, and Cu may be included. For example, it may be a solder containing SAC (Sn, Ag, Cu), or a paste material containing Ag.

The first metal layer 310 includes a first protrusion 312 surrounding the side surface of the light emitting device 100, and the second metal layer 320 includes a second protrusion 322 surrounding the side surface of the light emitting device 100. It may include. The first metal layer 310 includes a first protrusion 312 protruding from the upper surface of the first mounting portion 311 toward the light emitting structure 120, and the second metal layer 320 has a second mounting portion 321 A second protrusion 322 protruding toward the light emitting structure 120 from the upper surface of the first and second protrusions 312 and 322 may be spaced apart from the first and second pads 153 and 163, respectively. have.

The first protrusion 312 and the second protrusion 322 may be intentionally controlled differently in thickness, or may be less etched in the edge region in the process of etching the substrate 200. However, intentionally or unintentionally, when the protrusion is provided, it may have an effect of blocking moisture or other contaminants flowing into the light emitting device 100.

At this time, the upper portion T1 of the first protrusion 312 and the second protrusion 322 may be disposed between the transparent layer 110 and the lower surface 101 of the light emitting structure. In addition, as an example, the first protrusion 312 and the second protrusion 322 may be provided to be higher than the lower surface 101 of the light emitting device 100 by a first distance W1. Therefore, it may have an effect of more effectively blocking moisture or other contaminants flowing into the inside of the light emitting device 100.

According to an embodiment, the first protrusion 312 and the second protrusion 322 may be formed lower than the top surface 102 of the light emitting device 100. However, as shown in FIG. 3, the upper portion T1 of the first protrusion 312 and the second protrusion 322 may be located between the lower surface 103 of the light-transmitting layer 110 and the upper surface 102 of the light-transmitting layer 110. It might be.

Referring to FIG. 4, the light emitting device 100 may include a first side surface S1 and a second side surface S2 facing each other, and a third side surface S3 and a fourth side surface S4 facing each other. . The first protruding portion 312 includes a first dividing portion 312c surrounding a portion of the first side surface S1 of the light emitting device 100 and a second dividing portion 312b surrounding a portion of the second side surface S2. , And a third partition 312a surrounding the third side surface S3.

The third dividing portion 312a is disposed to face the third side surface S3 of the light emitting element 100, and the first dividing portion 312c is provided at one end of the third dividing portion 312a. It may extend toward the first side (S1). In addition, the second dividing part 312b may extend from the other end of the third dividing part 312a toward the second side surface S2 of the light emitting device 100.

The second metal layer 320 includes a first partitioning portion 322c surrounding a portion of the first side surface S1, a second partitioning portion 322b surrounding a portion of the second side surface S2, and a fourth side surface ( A fourth dividing portion 322a surrounding S4) may be included.

The fourth dividing portion 322a is disposed to face the fourth side surface S4 of the light emitting element 100, and the first dividing portion 322c is provided at one end of the fourth dividing portion 322a. It may extend toward the first side (S1). In addition, the second dividing portion 322b may extend from the other end of the fourth dividing portion 322a toward the second side surface S2 of the light emitting device 100.

The first side surface S1 of the light emitting device 100 may be surrounded by the first division portion 312c of the first metal layer 310 and the first division portion 322c of the second metal layer 320. A first insulating portion 203 may be disposed between the first division portion of the first metal layer 310 and the first division portion of the second metal layer 320.

The second side surface S2 of the light emitting device 100 may be surrounded by the second division portion 312b of the first metal layer 310 and the second division portion 322b of the second metal layer 320. A first insulating portion 203 may be disposed between the second division portion 312b of the first metal layer 310 and the second division portion 322b of the second metal layer 320.

At this time, the maximum width W1 in the first direction from the outer surface of the first protrusion 312 to the outer surface of the second protrusion 322 may be greater than the maximum width W2 in the first direction of the light emitting device 100.

The maximum width W1 in the first direction from the outer surface of the first protrusion 312 to the outer surface of the second protrusion 322 may be 105% to 120% of the maximum width W2 in the first direction of the light emitting device 100. have. When the maximum width W1 in the first direction is less than 105%, the light emitting device 100 may not be electrically connected to the first and second metal layers 310 and 320 due to a tolerance margin. In addition, when the maximum width W1 in the first direction is greater than 120%, the areas in which the first and second metal layers 310 and 320 absorb ultraviolet rays may be widened, resulting in a decrease in light output.

The minimum width W3 in the first direction from the first metal layer 310 to the second metal layer 320 may be the same as or greater than the first direction width W3 of the first insulating portion 203. When the minimum width W3 in the first direction from the first metal layer 310 to the second metal layer 320 is smaller than the first direction width W3 of the first insulating portion 203, the first metal layer 310 and the first metal layer 310 2 The metal layer 320 may be too close to each other to cause a short circuit.

The protection element 400 may be electrically connected to the first conductive portion 201 and the second conductive portion 202. For example, a third metal layer 340 may be disposed on the first conductive portion 201 and a fourth metal layer 330 may be disposed on the second conductive portion 202. The protection element 400 is disposed on the fourth metal layer 330 and may be electrically connected to the third metal layer 340 by a wire, but is not limited thereto. For example, the protection element 400 may also be manufactured in the form of a flip chip. The protection element 400 may be a Zener diode, but is not limited thereto.

5A is a view showing a protrusion formed in a metal layer, and FIG. 5B is a cross-sectional view showing a protrusion formed in a metal layer.

5A and 5B, the first mounting portion 311 of the first metal layer 310 includes a plurality of third protrusions 311a, and the second mounting portion 321 of the second metal layer 320 May include a plurality of fourth protrusions 312a. In addition, the first insulating portion 203 disposed between the first metal layer 310 and the second metal layer 320 may include a fifth protrusion 203a.

The protrusion heights of the third to fifth protrusions 311a, 312a, and 203a may be lower than the protrusion heights of the first and second protrusions 312 and 322. Also, the third to fifth protrusions 311a, 312a, and 203a may be connected to each other on a plane. That is, the third to fifth protrusions 311a, 312a, and 203a may form a continuous spiral pattern on a plane.

In this structure, after the first conductive portion 201, the second conductive portion 202, and the first insulating portion 203 are etched using a laser etching method, the first metal layer 310 and the second metal layer are etched thereon. When forming 320, it can be observed.

The connection patterns in which the third to fifth protrusions 311a, 312a, and 203a are connected may be formed continuously at 11 o'clock, 7 o'clock, and 5 points, starting at 1 o'clock. That is, the connection pattern may be formed in a counterclockwise direction, but is not limited thereto, and may be continuously formed in a clockwise direction. In addition, the connection pattern may have a spiral shape that gradually decreases in area as it rotates.

At this time, a first seed layer 360 is formed between the first metal layer 310 and the substrate 200, and a second seed layer 360 may be formed between the second metal layer 320 and the substrate 200. have. In the plating process, only the portion where the seed layer is formed may be selectively plated to form a metal layer. The seed layer may be selected without limitation in thickness and material such that plating is possible. For example, the seed layer 360 may include Ni, but is not limited thereto.

6 is an image of a substrate according to an embodiment of the present invention, FIG. 7 is an enlarged view of part A of FIG. 6, and FIG. 8 is an enlarged view of part B of FIG. 6.

Referring to FIG. 6, a first metal layer 310 and a second metal layer 320 having a rectangular shape are formed on the substrate 200 and the first insulating portion 203 may be exposed therebetween. In this case, referring to FIG. 7, it can be seen that the edge of the first metal layer 310 protrudes relatively convexly to form a protrusion. In addition, referring to FIG. 8, it can be seen that the central portion of the first metal layer 310 is relatively flat compared to the first and second protrusions 312 and 322.

9 is a view of a light emitting device package according to another embodiment of the present invention, Figure 10 is a view of a light emitting device package according to another embodiment of the present invention.

Referring to FIG. 9, the substrate 200 includes a first sidewall 201a protruding vertically from the first conductive portion 201 and a second sidewall 202a protruding vertically from the second conductive portion 202. ). The first sidewall 201a and the second sidewall 202a may be disposed to surround the first and second metal layers 310 and 320 and the light emitting device 100 to form a cavity 240.

When the substrate 200 is made of aluminum, a separate reflecting member may be omitted due to high reflectance in the ultraviolet wavelength band. In addition, since the substrate 200 itself is conductive, a separate circuit pattern and a lead frame can be omitted. In addition, since it is made of aluminum, thermal conductivity may be excellent from 140 W/m.k to 160 W/m.k. Therefore, the heat dissipation efficiency can also be improved.

However, the present invention is not limited thereto, and the substrate 200 may be made of a non-conductive material such as AlN or Al ₂ O ₃ , and may be appropriately used depending on the field to be applied. For example, an AlN material may be applied in an application field in which heat dissipation characteristics are highly important, and an Al ₂ O ₃ material may be applied in an application field in which reflection characteristics are important.

The light transmitting member 40 may be disposed on the first sidewall 201a and the second sidewall 202a. However, the present invention is not limited thereto, and the light transmitting member 40 may be disposed on a step (not shown) formed in the first sidewall 201a and the second sidewall 202a.

The light transmitting member 40 is not particularly limited as long as it is a material capable of transmitting light in the ultraviolet wavelength band. Illustratively, the light transmitting member 50 may include an optical material having high UV wavelength transmittance, such as quartz, but is not limited thereto.

While the substrate 200 is made of an insulating material, the first sidewall 201a and the second sidewall 202a may be made of a conductive material. For example, the first sidewall 201a and the second sidewall 202a may be manufactured by plating a conductive material such as copper (Cu). Accordingly, irregularities may be formed on outer surfaces of the first sidewall 201a and the second sidewall 202a.

Referring to FIG. 10, the substrate 200 includes a first groove 211a disposed at an edge where the side surface 242 and the bottom surface 241 of the second conductive portion 202 meet, and the second conductive portion 202. The second groove 211b may be disposed at an edge where the side surface 242 and the lower surface 241 meet.

In addition, the substrate 200 may include a second insulating portion 201b disposed in the first groove 211a and a third insulating portion 202b disposed in the second groove 211b. The first and second grooves 211a and 211b may be entirely disposed along an edge where the bottom surface 241 and the side surface 242 of the substrate 200 meet.

The shapes of the first groove 211a and the second groove 211b are not particularly limited. Cross sections of the first groove 211a and the second groove 211b may include a polygonal shape, a lens shape, or the like.

The second insulating portion 201b and the third insulating portion 202b may be made of the same material as the first insulating portion 203, but are not limited thereto. Modified epoxy resin compositions such as EMC, white silicone, photoimageable solder resist (PSR), silicone resin composition, silicone-modified epoxy resin, and epoxy-modified silicone resin are modified for the second insulating portion 201b and the third insulating portion 202b. Silicone resin composition, polyimide resin composition, modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT Resins such as resins can be selected.

According to the embodiment, since the second insulating portion 201b and the third insulating portion 202b are disposed at the lower edge of the substrate 200, it is possible to prevent burrs from occurring at the edge of the package cutting. Since the aluminum substrate 200 is made of metal, burrs may be easily generated when cutting. When burrs are generated, mounting on the circuit board may be poor because the lower surface 241 is not flat. In addition, when a burr occurs, the thickness may be non-uniform, and a measurement error may occur due to excitation of some regions. Since the second insulating portion 201b and the third insulating portion 202b are made of an insulating material, burrs may not be easily generated when cutting.

The second insulating portion 201b and the third insulating portion 202b may be disposed outside the first metal layer 310 and the second metal layer 320. Therefore, the outer surface of the first metal layer 310 and the second insulating portion 201b may have a gap W31 in the horizontal direction. If, if the second insulating portion 201b and the first metal layer 310 overlap in the vertical direction, the width of the second insulating portion 201b may be too wide, thereby deteriorating the heat dissipation effect, and the bottom surface of the substrate 200 There is a problem in that the area to be mounted with this circuit board is reduced.

11 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, FIG. 12 is a partially enlarged view of FIG. 11, FIG. 13 is a plan view of a light emitting device according to an embodiment of the present invention, and FIG. This is a view showing the arrangement of the first ohmic electrode and the second ohmic electrode.

Referring to FIG. 11, a light emitting device according to an embodiment of the present invention includes a light emitting structure 120, a first insulating layer 171 disposed on the light emitting structure 120, and a first conductive semiconductor layer 121 The first ohmic electrode 151 disposed on, the second ohmic electrode 161 disposed on the second conductivity type semiconductor layer 123, and the first cover electrode 152 disposed on the first ohmic electrode 151 ), a second cover electrode 162 disposed on the second ohmic electrode 161, and a second insulating layer 172 disposed on the first cover electrode 152 and the second cover electrode 162. can do.

When the light emitting structure 120 emits light in the ultraviolet wavelength band, each semiconductor layer of the light emitting structure 120 includes In _{x 1} Al _y1 Ga _{1 -x1- y1} N ( _0≤x1≤1 , 0<y1 including aluminum). ≤1, 0≤x1+y1≤1). Here, the composition of Al can be represented by the ratio of the total atomic mass and the atomic mass of Al, including the atomic mass of In, atomic mass of Ga, and atomic mass of Al. For example, when the Al composition is 40%, the composition of Ga may be 60% Al ₄₀ Ga ₆₀ N.

In addition, in the description of the embodiment, the meaning that the composition is low or high may be understood as a difference (and/or a percentage point) of the composition% of each semiconductor layer. For example, when the aluminum composition of the first semiconductor layer is 30% and the aluminum composition of the second semiconductor layer is 60%, it can be expressed that the aluminum composition of the second semiconductor layer is 30% higher than the aluminum composition of the first semiconductor layer. have.

The transparent layer 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The light-transmitting layer 110 may be a light-transmitting substrate through which light in an ultraviolet wavelength band can transmit.

The buffer layer 111 may relieve lattice mismatch between the light-transmitting layer 110 and the semiconductor layers. The buffer layer 111 may be formed of a combination of Group III and Group V elements, or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. In this embodiment, the buffer layer 111 may be AlN, but is not limited thereto. The buffer layer 111 may include a dopant, but is not limited thereto.

The first conductivity-type semiconductor layer 121 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first dopant may be doped. The first conductive semiconductor layer 121 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1 -y1} N (0≤x1≤1, 0<y1≤1, 0≤x1+y1≤1), for example For example, it may be selected from AlGaN, AlN, InAlGaN and the like. Further, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 may be disposed between the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 123. The active layer 122 is a layer in which electrons (or holes) injected through the first conductivity type semiconductor layer 121 meets holes (or electrons) injected through the second conductivity type semiconductor layer 123. The active layer 122 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

The active layer 122 may have a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and may have any one structure, and the active layer 122 The structure of is not limited to this.

The active layer 122 may include a plurality of well layers (not shown) and a barrier layer (not shown). The well layer and the barrier layer may have a composition formula of In _x2 Al _y2 Ga _{1 -x2- y2} N (0≤x2≤1, 0<y2≤1, 0≤x2+y2≤1). The aluminum composition of the well layer may vary according to the wavelength of light emission.

The second conductivity-type semiconductor layer 123 is formed on the active layer 122, and may be implemented as a compound semiconductor such as a III-V group or a II-VI group, and is second to the second conductivity-type semiconductor layer 123. The dopant can be doped.

The second conductive semiconductor layer 123 is a semiconductor material or AlInN having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0<y2≤1, 0≤x5+y2≤1) , AlGaAs, GaP, GaAs, GaAsP, AlGaInP.

When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity-type semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

The first insulating layer 171 may be disposed between the first ohmic electrode 151 and the second ohmic electrode 161. Specifically, the first insulating layer 171 may include a first hole 171a in which the first ohmic electrode 151 is disposed and a second hole 171b in which the second ohmic electrode 161 is disposed.

The first ohmic electrode 151 may be disposed on the first conductivity type semiconductor layer 121, and the second ohmic electrode 161 may be disposed on the second conductivity type semiconductor layer 123.

The first ohmic electrode 151 and the second ohmic electrode 161 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium (IGZO) zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In -Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, It may be formed of at least one of In, Ru, Mg, Zn, Pt, Au, and Hf, but is not limited to these materials. For example, the first ohmic electrode 151 may have a plurality of metal layers (eg, Cr/Al/Ni), and the second ohmic electrode 161 may be ITO.

Referring to FIG. 12, the first ohmic electrode 151 may include a first groove 151a disposed on one surface. Unlike a general visible light emitting device, in the case of an ultraviolet light emitting device, it is necessary to heat-treat an electrode at high temperature for ohmic. For example, the first ohmic electrode 151 and/or the second ohmic electrode 161 may be heat treated at about 600 degrees to 900 degrees, and in this process, an oxide film (not shown) is formed on the surface of the first ohmic electrode 151. ) May be formed. However, since the oxide film can act as a resistive layer, the operating voltage may increase.

Therefore, the first ohmic electrode 151 according to the embodiment may form a first groove 151a on one surface to remove the oxide film. In this process, a protrusion 151b surrounding the first groove 151a may be formed.

When the first ohmic electrode 151 is etched as a whole, there is a problem in that shorting occurs by etching the first insulating layer 171 around the first ohmic electrode 151. Therefore, the embodiment may prevent etching of the first insulating layer 171 by etching only a portion of the first ohmic electrode 151. Therefore, in the first ohmic electrode 151 according to the embodiment, the edge region remains to form the protrusion 151b.

If necessary, the thickness of the mask may be adjusted to relatively weakly etch the protrusion 151b of the first ohmic electrode 151. In this case, the oxide film remaining on the protruding portion 151b and the side surface of the first ohmic electrode 151 may be partially removed.

The first cover electrode 152 may be disposed on the first ohmic electrode 151. The first electrode may include a first uneven portion 152c disposed inside the first groove. The first cover electrode 152 may cover the side surface of the first ohmic electrode 151. In this case, since the contact area between the first cover electrode 152 and the first ohmic electrode 151 is wide, the operating voltage may be lowered.

The first cover electrode 152 may include a second concave-convex portion 152b disposed in a separation area d2 between the first insulating layer 171 and the first ohmic electrode 151. The second concave-convex portion 152b may directly contact the first conductive semiconductor layer 121. Therefore, the current injection efficiency can be improved. The width of the separation area d2 may be about 1 um to 10 um, but is not limited thereto.

The first cover electrode 152 may extend over the first insulating layer 171. Therefore, the entire area of the first cover electrode 152 is increased, so that the operating voltage can be lowered.

Referring to FIG. 11 again, the second cover electrode 162 may be disposed on the second ohmic electrode 161. The second cover electrode 162 may cover the side surface of the second ohmic electrode 161, but is not limited thereto. For example, the second cover electrode 162 may be disposed only on the second ohmic electrode 161.

The first cover electrode 152 and the second cover electrode 162 are Ni/Al/Au, or Ni/IrOx/Au, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru , Mg, Zn, Pt, Au, Hf, but may be formed. However, the first cover electrode 152 and the second cover electrode 162 may include gold (Au) on the outermost layers exposed to the outside. Gold (Au) prevents corrosion of the electrode and improves electrical conductivity, making electrical connection with the pad smooth.

The second insulating layer 172 may be disposed on the first cover electrode 152, the second cover electrode 162, and the first insulating layer 171. The second insulating layer 172 may include a first opening 152a exposing the first cover electrode 152 and a second opening 162a exposing the second cover electrode 162.

The first insulating layer 171 and the second insulating layer 172 are formed of at least one selected from the group consisting of SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc. Can be. In the process of forming the second insulating layer 172, the boundary between the first insulating layer 171 and the second insulating layer 172 may partially disappear.

The first pad 153 may be disposed on the first cover electrode 152, and the second pad 163 may be disposed on the second cover electrode 162. The first pad 153 and the second pad 163 may be eutectic bonding, but are not limited thereto.

13 and 14, the light emitting structure 120 may include a light emitting unit M1 protruding by etching. The light emitting unit M1 may include an active layer 122 and a second conductivity type semiconductor layer 123. An area other than the light emitting part M1 may be a non-light emitting part M2 to which the first conductive type semiconducting layer is exposed.

At this time, the ratio (P11/P12) of the maximum circumference P11 of the light emitting unit M1 and the maximum area P12 of the light emitting unit may be 0.02 [1/um] or more and 0.05 [1/um] or less. Here, the maximum circumference and the maximum area of the light emitting unit M1 may be the maximum circumference and the area of the second conductivity type semiconductor layer (or active layer).

When the ratio (P11/P12) is 0.02 or more, the circumference of the light emitting portion is increased compared to the area, thereby improving light output. For example, the probability that light can be emitted from the side is increased, so that the light output can be improved. In addition, when the ratio (P11/P12) is 0.05 or less, the circumference of the light-emitting portion relative to the area becomes too long, so that a problem that light output is lowered can be prevented. For example, when the circumference of the light emitting portion is excessively long within the same area, the very thin light emitting portion may be continuously arranged. However, in this case, the electrode disposed on the light emitting unit is also very thin, so that resistance may be increased. Therefore, the operating voltage can rise.

The light emitting unit M1 includes a plurality of first light emitting units M11 spaced apart in the second direction and a plurality of first light emitting units extending in the second direction so as to have an appropriate circumference and area ratio. The connected second light emitting unit M12 may be included.

The second cover electrode 162 may have a shape corresponding to the shape of the light emitting unit M1. In addition, the first electrode may be disposed in a form surrounding the second electrode.

The first pad 153 and the second pad 163 may be spaced apart in a first direction on a plane. The first direction may be the X direction and the second direction may be the Y direction. The first direction and the second direction may be perpendicular to each other, but are not limited thereto.

The first pad 153 is electrically connected to the first cover electrode 152 through the first opening 152a of the second insulating layer, and the second pad 163 is the second opening 162a of the second insulating layer. ) May be electrically connected to the second cover electrode 162. The first opening 152a may be one hole formed along the shape of the first cover electrode 152, and the second opening 162a may be a plurality.

Referring to FIG. 13, the second cover electrode 162 is a second connection electrode 162-2 extending in a second direction (Y direction) between the second conductivity type semiconductor layer 123 and the second pad 163. ), and a plurality of second branch electrodes 162-1 extending from the second connection electrode 162-2 toward the first pad 153 in the first direction (X direction).

The first cover electrode 152 includes a first connection electrode 152-2 extending in a second direction between the first conductive semiconductor layer 121 and the first pad 153, and the first connection electrode 152- 2) may include a plurality of first branch electrodes 152-1 extending toward the second pad 163.

The first connection electrode 152-2 may be disposed along the edge of the light emitting structure 120 to surround the second cover electrode 162. Accordingly, current may be uniformly distributed in the first conductivity type semiconductor layer 121 during current injection.

The width Q3 in the first direction of the first connection electrode 152-2 may be smaller than the width Q4 in the first direction of the second connection electrode 162-2. The ratio of the width of the first connection electrode 152-2 in the first direction and the width of the second connection electrode 162-2 in the first direction (Q3:Q4) may be 1: 1.1 to 1: 1.5. When the width ratio (Q3:Q4) is 1:1.1 or more, the area of the second cover electrode 162 may be increased to improve hole injection efficiency, and when the width ratio is 1:1.5 or less, the first connection electrode 152-2 ), the electron injection efficiency can be improved.

The first branch electrode 152-1 may be disposed between neighboring second branch electrodes 162-1. In this case, the width Q2 in the second direction of the first branch electrode 152-1 may be smaller than the width Q1 in the second direction of the second branch electrode 162-1. The ratio (Q2:Q1) of the width Q2 in the second direction of the first branch electrode 152-1 and the width Q1 in the second direction of the second branch electrode 162-1 is 1:2 to 1 :4. When the ratio of the width (Q2:Q1) is 1:2 or more, the area of the second cover electrode 162 is increased, so that hole injection efficiency can be improved. In addition, when the ratio of the width is 1:4 or less, the area of the first cover electrode 152 can be secured, so that the electron injection efficiency can be improved.

The area of the second cover electrode 162 may be larger than the area of the first cover electrode 152. The ratio R1:R2 of the total area R2 of the first cover electrode 152 may be 1:0.5 to 1:0.7 in the total area R1 of the second cover electrode 162. When the area ratio is 1:0.5 or more, the area of the first cover electrode 152 is secured, so that the electron injection efficiency can be improved, and the second cover electrode 162 of the first cover electrode 152 may be disposed to surround the second cover electrode 162. . Therefore, the current dispersion efficiency can also be improved.

When the area ratio is 1:0.7 or less, the area of the second cover electrode 162 is secured, so that hole injection efficiency may be improved and light output may be improved.

The end of the first branch electrode 152-1 is disposed between the second pad 163 and the first conductive semiconductor layer 121, and the end of the second branch electrode 162-1 is the first pad 153 ) And the second conductivity type semiconductor layer 123. That is, the first branch electrode 152-1 overlaps the second pad 163 in the thickness direction of the first conductivity type semiconductor layer 121, and the second branch electrode 162-1 is the first conductivity type semiconductor The first pad 153 may overlap the thickness of the layer 121.

The first pad 153 includes a first side 153b and a second side 153a parallel to the second direction, and the second pad 163 is parallel to the second direction and to the second side 153a. It may include a third side 163a close to, and a fourth side 163b parallel to the third side 163a.

At this time, the distance L1 in the first direction from the end of the first branch electrode 152-1 to the fourth side 163b of the second pad 163 is removed from the end of the second branch electrode 162-1. The first side 153b of the one pad 153 may be longer than the distance L2 in the first direction. The overlapping area of the second branch electrode 162-1 and the first pad 153 may be larger than the overlapping area of the first branch electrode 152-1 and the second pad 163.

15 to 19 are views illustrating a method of manufacturing a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 15, a substrate 200 having a first insulating portion 203 formed between a first conductive portion 201 and a second conductive portion 202 may be manufactured. In the substrate 200, the first conductive portion 201 and the second conductive portion 202 are alternately arranged to form a single substrate 200 to produce a plurality of packages, and then cut into package units. have.

Referring to FIG. 16, a mask layer 210 may be formed on the top surface of the substrate 200. The material and thickness of the mask layer 210 are not particularly limited. For example, the mask layer 210 may be SiO ₂ or SiN-based, but is not necessarily limited thereto. That is, it is not particularly limited as long as it is a material and thickness that can serve as a mask during plating.

Referring to FIG. 17, the substrate 200 may etch the mask layer 210 in the center portion. At this time, the method of etching the mask layer 210 in the central portion is not particularly limited. For example, the mask layer 210 in the central portion may be etched using a laser.

In the process of etching the mask layer 210 with the laser 11, a portion of the upper surface of the substrate 200 may be etched. The laser 11 may be etched while gradually moving from the outside of the portion to be etched to the inside. At this time, since the etching of the substrate 200 does not occur relatively well when the etching starts from the outside, the edge region 231 among the etching regions may protrude relative to the central region 232. Alternatively, the laser power may be intentionally adjusted so that the edges are not etched well.

In the process of etching the mask layer 210 in the spiral direction by using a laser, a protruding pattern P12 is formed on the upper surface of the first conductive portion 201, the upper surface of the second conductive portion 202, and the first insulating portion 203. , P12) may be continuously formed (see FIG. 5 ).

Referring to FIG. 18, a metal layer may be formed on the substrate 200. The metal layer may be formed by a plating process, but is not necessarily limited thereto. At this time, since the mask layer 210 is etched to form a seed layer only on the top surface of the exposed substrate 200, a plating layer may not be formed on the portion where the mask layer remains and the top surface of the first insulating portion 203.

At this time, among the regions where the substrate 200 is exposed, the edge regions 231 are relatively protruded, so that the first metal layer 310 and the second metal layer 320 are also formed with first and second protrusions 312 and 322 at the edges. Can be.

The first metal layer 310 may include a first mounting portion 311 on which a pad is mounted and a first protrusion 312 disposed on an edge of the first mounting portion 311. At this time, the first mounting portion 311 may be formed with a third protrusion 311a corresponding to the unevenness formed on the first conductive portion 201.

The second metal layer 320 may include a second mounting portion 321 on which a pad is mounted and a second protrusion 322 disposed on an edge of the second mounting portion 321. At this time, the second mounting portion 321 may be formed with a fourth protrusion 321a corresponding to the unevenness formed on the second conductive portion 202. At this time, a fifth protrusion 203a formed on the first insulating portion may be disposed between the third protrusion 311a and the fourth protrusion 321a.

Since the edge region of the exposed region of the substrate 200 protrudes more than the central region of the substrate, the first and second protrusions 312 and 322 protrude more vertically than the third and fourth protrusions 311a and 312a. Can be.

Referring to FIG. 19, the mask layer 210 may be removed and a bonding portion 17 may be formed between the first and second metal layers 310 and 320 and the light emitting device 100 to be electrically connected. The bonding portion 17 may be a eutectic bonding, but is not necessarily limited thereto, or may be bonded using a conductive adhesive.

At this time, the third mounting portion 311 of the first metal layer 310 may remain in the separation region W21 between the first pad 153 and the first projection 312. Also, although not illustrated, the fourth mounting portion 321 of the second metal layer 320 may remain in the spaced apart region between the second pad 163 and the second projection 322.

The light emitting device package can be applied to various types of light source devices. Illustratively, the light source device may be a concept including a sterilizing device, a curing device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor element can be applied to various electronic devices that are disposed in a case and provide light.

The sterilizing device may be provided with a semiconductor device according to an embodiment to sterilize a desired area. The sterilization device may be applied to household appliances such as water purifiers, air conditioners, and refrigerators, but is not limited thereto. That is, the sterilization device can be applied to all of various products (eg, medical devices) that require sterilization.

Illustratively, the water purifier may include a sterilizing device according to an embodiment to sterilize circulating water. The sterilizing device may be disposed on a nozzle or discharge port through which water circulates to irradiate ultraviolet rays. At this time, the sterilization device may include a waterproof structure.

The curing device may be equipped with a semiconductor device according to an embodiment to cure various types of liquids. The liquid may be the broadest concept including all of various materials that are cured when irradiated with ultraviolet light. Illustratively, a curing device can cure various types of resins. Alternatively, the curing device may be applied to cure beauty products such as nail polish.

The lighting device may include a light source module including a substrate and a semiconductor element of the embodiment, a heat dissipation unit that emits heat of the light source module, and a power supply unit that processes or converts an electrical signal received from the outside and provides the light source module. Further, the lighting device may include a lamp, a head lamp, or a street light.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module can emit light. The light guide plate is disposed in front of the reflector to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet or the like to be disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, an image signal output circuit supplies an image signal to the display panel, and a color filter can be disposed in front of the display panel.

When the light emitting device package is used as a backlight unit of a display device, it can be used as an edge type backlight unit or a direct type backlight unit.

The embodiments have been mainly described above, but this is merely an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains have not been exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

Claims (15)

A substrate including a first conductive portion, a second conductive portion, and a first insulating portion disposed between the first conductive portion and the second conductive portion;
A first metal layer disposed on the first conductive portion;
A second metal layer disposed on the second conductive portion; And
And a first pad electrically connected to the first metal layer, a second pad electrically connected to the second metal layer, and a light emitting device including a light emitting structure disposed on the first pad and the second pad. ,
The first metal layer and the second metal layer each include a first protrusion and a second protrusion protruding from the upper surface toward the light emitting structure,
The first and second protrusions are light emitting device packages spaced apart from the first and second pads, respectively.
According to claim 1,
The light emitting device includes a light-transmitting layer,
The upper portion of the first protrusion and the second protrusion is a light emitting device package disposed between the bottom surface of the light-transmitting layer and the bottom surface of the light emitting structure.
According to claim 1,
The light emitting device includes a light-transmitting layer,
The upper portion of the first protrusion and the second protrusion is a light emitting device package disposed between the bottom surface of the light-transmitting layer and the top surface of the light-transmitting layer.
According to claim 1,
The first protrusion is disposed outside the first pad,
The second protrusion is a light emitting device package disposed on the outside of the second pad.
According to claim 1,
The maximum width of the first direction from the first protrusion to the second protrusion is greater than the maximum width of the first direction of the light emitting device.
According to claim 1,
The minimum width in the first direction from the first metal layer to the second metal layer is the same or greater than the width of the first insulation portion in the first direction.
According to claim 1,
The first metal layer includes a first mounting portion on which the first pad is disposed,
The first mounting portion is a light emitting device package including a third projection formed in a separation area between the first pad and the first projection.
According to claim 1,
The first metal layer and the first pad are eutectic bonded,
The second metal layer and the second pad is a light emitting device package is eutectic bonding.
According to claim 1,
A light emitting device package comprising a first seed layer disposed between the first metal layer and the first pad and a second seed layer disposed between the second metal layer and the first pad.
According to claim 1,
The first metal layer includes a first mounting portion on which the first pad is disposed,
The second metal layer includes a second mounting portion on which the second pad is disposed,
The first mounting portion includes a plurality of third projections,
The second mounting portion includes a plurality of fourth projections,
The first insulating portion is a light emitting device package including a fifth protrusion.
The method of claim 10,
The third protrusion, the fourth protrusion and the fifth protrusion are light emitting device packages that are connected to each other on a plane.
According to claim 1,
A light emitting device package including a protective element electrically connected to the first conductive portion and the second conductive portion.
According to claim 1,
The first conductive portion includes a first side wall surrounding the light emitting element,
The second conductive portion includes a second side wall surrounding the light emitting element,
The first insulating portion is a light emitting device package disposed between the first sidewall and the second sidewall.
The method of claim 13,
A light emitting device package including a light emitting substrate disposed on the first sidewall and the second sidewall.
According to claim 1,
The first conductive portion includes a second insulating portion disposed at an edge where the side surface and the bottom surface are connected,
The second conductive portion includes a third insulating portion disposed at an edge where the side surface and the bottom surface are connected,
The first insulating portion, the second insulating portion, and the third insulating portion is a light emitting device package connected to each other.

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