KR20200057522A - Display apparatus - Google Patents

Abstract

According to an embodiment of the present specification, a display apparatus can include a display area displaying a screen and a bending area bent adjacently to the display area. Moreover, the display apparatus can include: a flexible substrate including a first base layer, a second base layer located on the first base layer, a first inorganic insulation layer placed between the first base layer and the second base layer, and a second inorganic insulation layer placed between the first base layer and the first inorganic insulation layer and made of a material different from the first inorganic insulation layer; a buffer layer located on the second base layer corresponding to the display area and a first signal wire located on the second base layer corresponding to the bending area; a thin film transistor located on the buffer layer placed in the display area; a first flattening layer located on the thin film transistor and the first signal wire; a sub electrode placed on the first flattening layer corresponding to the display area and connected with the thin film transistor through a contact hole of the first flattening layer, and a second signal wire located on the first flattening layer corresponding to the bending area; and a second flattening layer located on the sub electrode and the second signal wire. Therefore, the display apparatus is capable of improving the reliability of the display apparatus by preventing a moisture component from permeating through a base layer.

Description

Display device {DISPLAY APPARATUS}

This specification relates to a display device.

With the recent advent of the information age, the display field for visually expressing electrical information signals has rapidly developed, and in response, various display devices having excellent performances such as thinning, lightening, and low power consumption (Display Apparatus) Is being developed.

Specific examples of such a display device include a liquid crystal display device (LCD), a field emission display device (FED), an organic light emitting display device (OLED), and a quantum dot display device (Quantum Dot Display apparatus) and the like.

The display device may include a display panel and a plurality of components for providing various functions. For example, one or more display driving circuits for controlling the display panel may be included in the display assembly. Examples of drive circuits are gate drivers, light emitting (source) drivers, power (VDD) routing, electrostatic discharge (ESD) circuits, multiplex (MUX) circuits, data signal lines, cathode contacts, and other functional elements. Includes A number of peripheral circuits for providing various types of additional functions, such as touch sensing or fingerprint identification functions, may be included in the display assembly. Some components may be disposed on the display panel itself, next to the display area, often referred to as non-display area (NDA) and / or inactive area (NDA) in the present disclosure. It may be disposed on the peripheral areas of.

Size and weight have become important issues when designing displays for modern display devices. In addition, a high ratio of the size of the display area to the size of the non-display area, referred to as a screen-to-bezel ratio, is one of the most important features in display design. However, placing some of the components described above in the display assembly may require a large non-display area, for example, which may be increased to the portion for placing components on the display panel. A large non-display area tends to make the display panel large, which can make it difficult to integrate the display panel into the housing of the display device. The large non-display area may require a large masking (eg, bezel edge, covering material) to cover a portion for disposing components of the display panel, and may act as an element that inhibits the aesthetics of the display device. .

Some components can be placed on a separate flexible printed circuit board (FPCB) and can be located on the backplane of the display panel. However, even with such a configuration, components necessary for driving a display panel such as interfaces or driver ICs for connecting wirings between the FPCB and the display area are still disposed in the non-display area, which limits the reduction in bezel size.

The inventors of the present specification have recognized that various high-level technologies such as the location of the wiring, the width of the wiring, and the method of signal transmission are required to implement a narrow bezel in which the ratio of the non-display area is lowered. Accordingly, the inventors of the present specification have conducted research on various designs using the bending characteristics of the display device to which the flexible substrate is applied, and a new structure for minimizing the non-display area, that is, the non-display area, rather than the display area where the image is displayed. And a manufacturing method.

For example, in order to make the display device smaller and lighter by lowering the ratio of the non-display area, it is desirable to increase the proportion of the display area by bending a portion of the display panel. This allows some non-display areas to be located behind the display area of the display panel, thereby reducing or eliminating the non-display area that must be masked or hidden under the device housing. The bending of the flexible substrate can minimize the size of the non-display area that should be obscured in the field of view, thereby providing a flexible display device that can realize a narrow bezel or a bezel-free display device and an improved aesthetic design. Is to do.

However, there are new problems to be solved when providing such flexible display devices.

Various components should be disposed directly on the flexible substrate together with the display pixels. The flexible substrate uses a thin substrate for flexibility. The reliability of the display device may be deteriorated due to various stresses that may occur in use of the thin flexible substrate after manufacturing and / or completion. For example, moisture may penetrate into a thin flexible substrate. Thereby, components formed on the substrate may be vulnerable to moisture that has penetrated. In particular, as moisture penetrates into the flexible display device, it may negatively affect the reliability of the product or, furthermore, may cause defects or failures in the finished components. Accordingly, it is intended to provide a display device for preventing moisture from penetrating through the flexible substrate in order to prevent moisture from penetrating through the thin flexible substrate.

The display device according to the exemplary embodiment of the present specification may include a display area displaying a screen and a bending area adjacent to the display area and bent. And, a first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and between the first base layer and the first inorganic insulating layer A flexible substrate including a second inorganic insulating layer made of a material different from the first inorganic insulating layer, a buffer layer on the second base layer corresponding to the display region, and a second base layer on the second base layer corresponding to the bending region 1 signal wiring, a thin film transistor on a buffer layer disposed in the display area, a thin film transistor and a first planarization layer on the first signal wiring, and a contact hole of the first planarization layer disposed on the first planarization layer corresponding to the display area It may include an auxiliary electrode connected to the thin film transistor, a second signal wiring on the first planarization layer corresponding to the bending region, and a second planarization layer on the auxiliary electrode and the second signal wiring.

The display device according to the exemplary embodiment of the present specification includes a first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and the first base It may include a flexible substrate including a second inorganic insulating layer disposed between the layer and the first inorganic insulating layer, a thin film transistor on the flexible substrate, and a light emitting device on the thin film transistor.

Details of other embodiments are included in the detailed description and drawings.

In the display device according to the exemplary embodiment of the present specification, a whole or a part of a non-display area of a display panel is folded in a shape having a constant radius of curvature by applying a flexible substrate, and is disposed on the rear surface of the display area, thereby allowing the overall appearance of the display panel to be reduced. You can achieve a slim bezel or a narrow bezel.

Therefore, the user can use a device whose aesthetically luminous screen is full on the front of the display device, and a compact module using a functionally narrow bezel can provide the user with superior grip and light weight. .

In addition, the display device according to the exemplary embodiment of the present specification forms an inorganic insulating layer having excellent moisture permeation effect between two base layers, thereby preventing moisture components from passing through the lower base layer to improve the reliability of the display device. Can be.

In the display device according to the exemplary embodiment of the present specification, an inorganic insulating layer is formed between two base layers, thereby blocking electric charges charged in the base layer of the flexible substrate to improve reliability of the display device. In addition, since a process of forming a separate metal layer in order to block the charge charged in the base layer can be omitted, it is possible to simplify the process and reduce production cost.

The display device according to the exemplary embodiment of the present disclosure forms an inorganic insulating layer disposed between two base layers as a double layer made of different insulating layers, thereby preventing water infiltration and the like, thereby improving reliability, and also in bending of a flexible substrate. A display device having a robust structure can be provided.

The effects of this specification are not limited to the effects mentioned above, and are not mentioned.

Another effect of silver will be clearly understood by those skilled in the art from the following description.

The subject matter to be solved above, the problem solving means, and the contents of the invention described in the effects do not specify the essential features of the claims, so the scope of the claims is not limited by the contents described in the contents of the invention.

1 is a plan view of a display device according to an exemplary embodiment of the present specification.
2 is a cross-sectional view taken along line I-I 'of FIG. 1.
3 is an enlarged plan view of the dotted area II of FIG. 1.
4 is a cross-sectional view of a display device according to an exemplary embodiment of the present specification.
5A to 5C are diagrams showing a mechanism for generating a defective substrate by moisture.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the general knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for describing the embodiments of the present invention are exemplary and the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present invention, when it is determined that detailed descriptions of related known technologies may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. When 'include', 'have', 'consist of', etc. mentioned in the specification are used, other parts may be added unless '~ man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as '~ top', '~ upper', '~ bottom', '~ side', etc., 'right' Alternatively, one or more other parts may be located between the two parts unless 'direct' is used.

In the case of a description of a time relationship, for example, 'after', 'following', '~ after', '~ before', etc. When a temporal sequential relationship is described, 'right' or 'direct' It may also include cases that are not continuous unless it is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

In describing the components of the present specification, terms such as first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the component from other components, and the essence, order, order, or number of the component is not limited by the term. When a component is described as being "connected", "coupled" or "connected" to another component, the component may be directly connected to or connected to the other component, but different components between each component It will be understood that the "intervenes" may be, or each component may be "connected", "coupled" or "connected" through other components.

In the present specification, "display device" is a liquid crystal module including a display panel and a driving unit for driving the display panel (Liquid Crystal Module; LCM), an organic light emitting module (OLED Module), a quantum dot module (Quantum Dot Module) It may include a display device. And, an electronic device including a laptop computer, a television, a computer monitor, an automotive display, or other form of a vehicle, which is a complete product or a final product including LCM, OLED, and QD modules. It may also include a set electronic device or set device, such as (equipment display), a mobile electronic device such as a smartphone or an electronic pad.

Accordingly, the display device in the present specification may include a narrow display device itself, such as an LCM, OLED, QD module, and even a set device that is an application product or a final consumer device including LCM, OLED, QD module, and the like.

In some cases, LCM, OLED, and QD modules composed of a display panel and a driving unit are expressed as a negotiated "display device", and electronic devices as finished products including LCM, OLED, and QD modules are "set devices". It can also be expressed separately. For example, the consultation display device includes a display panel of liquid crystal (LCD), organic light emitting (OLED), or quantum dots, and a source PCB as a control unit for driving the display panel, and the set device is connected to the source PCB. It may be a concept that further includes a set PCB which is a set control unit that is electrically connected to control the entire set device.

The display panel used in the present embodiment includes all forms of a liquid crystal display panel, an organic light emitting diode (OLED) display panel, a quantum dot display panel (QD), and an electroluminescent display panel. The display panel may be used, and is not limited to a specific display panel capable of bezel bending with the flexible substrate for an organic light emitting (OLED) display panel of the embodiment of the present specification and a back play support structure below. In addition, the display panel used in the display device according to the exemplary embodiment of the present specification is not limited to the shape or size of the display panel.

For example, when the display panel is an organic light emitting (OLED) display panel, it may include a plurality of gate lines and data lines, and pixels formed in an intersection region of the gate lines and the data lines. Then, a thin film transistor (TFT) including a thin film transistor which is an element for selectively applying voltage to each pixel, an organic light emitting device (OLED) layer on the thin film transistor TFT, and a thin film transistor to cover the organic light emitting device layer It may be configured to include an encapsulation or an encapsulation substrate (Encapsulation) disposed on the (TFT). The encapsulation layer protects the thin film transistor and the organic light emitting device layer from external impact, and can prevent moisture or oxygen from penetrating the organic light emitting device layer. In addition, the layer formed on the thin film transistor TFT may include an inorganic light emitting layer, for example, a nano-sized material layer or a quantum dot.

1 is a plan view schematically illustrating a display device 100 according to an exemplary embodiment of the present specification.

Referring to FIG. 1, the display device 100 includes at least one display area 101 in which a light emitting device 230 and a thin film transistor 210 are formed.

The display device 100 may further include a non-display area NDA disposed in the periphery of the display area 101, and the top, bottom, left, and right of the display area DA may be referred to as a non-display area NDA. The display area DA may have a rectangular shape, and various types of display devices such as a circle, an oval, or a polygon may be applied to a smart watch or a display device for automobiles. Therefore, the arrangement of the non-display area NDA surrounding the display area DA is not limited to the display device 100 illustrated in FIG. 1. Referring to the display device 100 illustrated in FIG. 1, the left and right non-display areas NDA of the display area DA are used to drive the light emitting elements 230 and the thin film transistors 210 formed in the display area DA. Various components are located to provide a function for stable light emission. Here, the left and right non-display areas NDA of the display area DA may be referred to as a first component forming unit. In the left and right non-display areas NDA of the display area DA, circuits such as GIP (Gate In Panel, 123) and ESD (Electrostatic Discharge, 124), the voltage of the cathode and the light emitting device as part of the light emitting device The area for contact between the low potential voltage (VSS) wiring 122 which is a reference point, and the display device 100 during the process of applying the foreign matter compensation layer among the encapsulation layers 240 for protecting the light emitting device 230 from external moisture or foreign matter ) A plurality of dam structures to prevent overflowing to the outside and cracks that may occur during the cutting process (Scribing process) for dividing the mother board into individual display devices 100 is a display device 100 A crack stopper structure (128) for preventing transmission to the inside may be disposed.

The crack preventing structure 126 according to the exemplary embodiment of the present specification includes the GIP 123 or the ESD 124 or the GIP 123 formed in the non-display area NDA in which an impact generated in the trimming line of the substrate 110 during the cutting process is performed. When the VSS 122 is reached and destroyed or further, a moisture permeation path is provided to the light emitting device 230 or the thin film transistor 210 formed in the display area DA, resulting in dark spots and pixel shrinkage. It can serve to prevent things.

The crack preventing structure 126 may be composed of an inorganic film or an organic film, and may be formed of a multilayer structure of an inorganic film / organic film. In FIG. 1, the crack prevention structure 126 is illustrated as being disposed only on both sides of the long side and one side of the display device 100, but is not limited thereto. For example, the crack preventing structure 126 may be disposed on the bending area BA and the area where the notch 127 is formed, and may be disposed on all the outer surfaces of the substrate 110.

In a region adjacent to the cut surface of the substrate 110, which is the outside of the crack prevention structure 126, a part or all of the insulating films (GI, buffer layer, etc.) deposited on the entire surface when forming the display area is etched to etch the substrate ( 110) may be configured such that a small amount of insulating film remains on the upper portion or the upper surface of the substrate is completely exposed so that the cutting impact is not transmitted to the corresponding insulating layer.

Referring to FIG. 1, in the lower region of the display device 100, an external power supply and a data driving signal lamp or a pad 135 formed to receive and transmit a touch signal and an FPCB 136 electrically connected to the pad 135 are disposed. , The wiring 121 for the high potential voltage (VDD), the wiring 122 for the low potential voltage (VSS), and / or the voltage wiring 127 for data extending from the FPCB 136 may be disposed.

The data voltage line 127 of the present specification may be disposed to be connected to the data driver IC 137 that generates the light emission signal of the light emitting element 230.

The area where the pad 135 and the data driver IC 137 described above are disposed may be referred to as a second component forming unit. A portion of the high-potential voltage wiring 121 and the low-potential voltage wiring 122 may be disposed in the second component forming unit.

Referring to FIG. 1, in the display device 100 according to an exemplary embodiment of the present specification, a notch formed by cutting both lower edges of the display device 100 for bending the bending area BA, as indicated by a dotted line, 151).

For example, when a cutting process for dividing an individual panel from a mother board is performed, the cutting surface is cut by cutting the inside of the non-display area NDA near the lower edge area of the display device 100 that is part of the non-display area NDA. The notch 151 may be formed to be adjacent to the upper voltage (VDD) wiring 121 or the low potential voltage (VSS) wiring 122.

The notch 151 of the present specification may start the notch 151 at one end of the flexible substrate 110 and perform a bending process in the vicinity of the corresponding area, and the driver IC may be bent near the data driver IC 137 The flexible substrate area including the 137 and the FPCB pad 135 may contact the back side of the flexible substrate on which the display area is formed.

The member connected to the pad 135 formed on the top surface of the display device 100 is not limited to the FPCB 136, and various members can be connected, and the position of the pad 135 is located on the top or back surface of the display device 100. It is also possible to deploy.

Although the data driver IC 137 illustrated in FIG. 1 is illustrated as being disposed on the upper surface of the display device, it is not limited to the driver IC 137, and the position is not limited to the upper surface of the display device 100 but may be disposed on the rear surface. .

FIG. 2 is a cross-sectional view of the non-display area NDA of the display device 100 of FIG. 1 in a bent state, and is a cross-sectional view taken along the cutting line I-I 'shown in FIG. 1. In FIG. 2, the display area DA is briefly described to include the flexible substrate 110 and the thin film transistor 210, the light emitting device 230, and the encapsulation layer 240 that may be formed on the flexible substrate 110, and the substrate The support layer 131 may be disposed under the 110.

Referring to FIG. 1, the flexible substrate 110 may include a display area DA displaying a screen and a non-display area NDA that is an area surrounding the display area DA. In addition, the non-display area NDA may include a bending area BA in which the flexible substrate 110 is bent. A micro coating layer (MCL, 133) may be disposed on the flexible substrate 110 corresponding to the bending area BA. The micro coating layer 133 may prevent or protect the breakage of the wirings disposed on the flexible substrate 110 corresponding to the bending area BA.

The micro coating layer 133 is formed on various wiring forming parts such as data wiring 127 formed on the bending area BA, high potential voltage wiring 121, and low potential voltage wiring 122 to be bent. It is possible to artificially adjust the position of the wirings to be close to the neutral line. For this reason, the tensile stress formed on the upper portion of the neutral line and the compressive stress formed on the lower portion of the neutral line can be applied to the wirings as little as possible to improve durability. In addition, the micro-coating layer 133 may protect various wirings disposed on the flexible substrate 110 from external impact, moisture, or dust during the manufacturing process.

A support layer 131 may be disposed under the flexible substrate 110. The support layer 131 may have, for example, a thickness of 100 μm to 125 μm, 50 μm to 150 μm, 75 μm to 200 μm, less than 150 μm, or greater than 100 μm, but is not limited to this thickness. . The support layer 131 may be made of, for example, polyethylene terephthalate (PET). The support layer 131 may be cut by a laser or the like and bent so that the cutting cross-sections of the support layer 131 face each other to form a bending area BA.

A pad portion 135 may be formed at one end of the flexible substrate 110. When the bending process is performed, the pad unit 135 and the flexible substrate 110 disposed are disposed behind the screen of the display area DA, so that the size of the display device 100 may be relatively small.

Between the flexible substrate 110 that is bent, an adhesive 134 may be provided below the support layer 131 so as to maintain a bent shape. For example, the adhesive 134 may be a foam tape. For example, the adhesive 134 can include a pressure sensitive adhesive, a foam-type adhesive, a liquid adhesive, a photo-curing adhesive, or any other suitable adhesive component. The adhesive 134 may be formed of a compressive material or include a compressive material, and may be a cushion for portions coupled to the adhesive 134. For example, the constituent material of the adhesive 134 may be compressible. The adhesive 134 may be formed of a plurality of layers, including a cushion layer (eg, polyolefin foam) interposed between the top and bottom layers of the adhesive material.

The adhesive 134 may be disposed on at least one of the upper surface and the lower surface of the extended body portion of the support layer 131.

A printed circuit board (PCB) formed on an upper surface of the flexible substrate 110 but bent and electrically connected to the driver IC 137, the pad 135, and the pad 135 is flexible substrate 110. It can be placed on the back.

The micro coating layer 133 may be disposed as shown in FIG. 2 to protect the wiring on the bent flexible substrate 110, and the entire bending region BA is sufficiently protected for the wiring disposed in the bending region BA. Can be applied to.

FIG. 3 is an enlarged view of an area II in which the notch 151 of FIG. 1 is formed, and shows components of the bending area BA and the non-display area NDA before the bending process.

The notch 151 may cut the edge of the flexible substrate 110 corresponding to the non-display area NDA in the display device 100 to form a cutting line of the flexible substrate 110 as shown in FIG. 3. For a slim bezel or a narrow bezel, when the bending process is performed, the smaller the area of the substrate to be bent, the less stress the substrate receives when bending, so the process yield can be further improved. In addition, in order to prevent the propagation of cracks that may occur during the process of cutting along the outer line of the flexible substrate 110, the crack inside the outer line of the flexible substrate 110 along the outer line of the flexible substrate 110. The preventive structure 126 can be formed. The flexible substrate 110, as shown in FIG. 3, may have rounded corners to improve durability and productivity, but is not limited thereto.

The GIP 123 and the ESD 124 may be disposed on the side of the display area DA, and the low potential voltage wiring 122 for grounding may be disposed along the periphery. The external power coming from the pad 135 may pass through the bending area BA and enter the non-display area NDA adjacent to the display area DA through the high-potential voltage line 121 and the gate power line 127. . In addition, the data wiring 127 may extend from the driver IC 137 to pass through the bending area BA and enter the display area DA. Since these various wires pass through the bending area BA, a plurality of wires may be exposed to tensile and compressive stress during the bending process. In addition, the flexible substrate 110 may be damaged because stress is concentrated in the bending area BA. As a result, a defect in which the display device 100 does not operate properly may occur.

Therefore, it may be important to prevent the flexible substrate 110 from being deformed due to environmental factors or various external forces to protect the wirings of the bending area BA.

4 is a cross-sectional view of a display device according to an exemplary embodiment of the present specification. 4 illustrates components of the display area DA and the bending area BA of the display device 100.

Referring to FIG. 4, the display device 100 according to an exemplary embodiment of the present specification includes a flexible substrate 110, a buffer layer 111, a thin film transistor 210, a gate insulating layer 112, and an interlayer insulating layer 113, Protective layer 114, first planarization layer 115, second planarization layer 116, auxiliary electrode 220, bank 117, light emitting device 230, first signal wiring 310, second signal A wiring 312 and an encapsulation layer 240 may be included.

The flexible substrate 110 may support various components of the display device 100. The flexible substrate 110 may be made of a plastic material having flexibility. When the flexible substrate 110 is made of a plastic material, for example, it may be made of polyimide (PI). When the substrate 110 is made of polyimide (PI), the display device manufacturing process is performed in a situation in which a support substrate made of glass is disposed under the flexible substrate 110, and the support substrate is released after the display device manufacturing process is completed. It can be released. In addition, after the support substrate is released, a back plate for supporting the flexible substrate 110 may be disposed under the flexible substrate 110.

When the flexible substrate 110 is made of a polyimide (PI) layer, the moisture component penetrates the flexible substrate 110 made of a polyimide (PI) layer, and moisture permeation proceeds to the thin film transistor 210 or the light emitting device 230. The performance of the display device 100 may be reduced.

The display device 100 according to an exemplary embodiment of the present specification may configure the flexible substrate 100 as a double base layer to prevent deterioration of the performance of the display device 100 due to moisture permeation. In addition, by forming a silicon oxide (SiOx) layer having excellent moisture permeation effect between the two base layers, it is possible to improve product performance reliability by blocking moisture components from passing through the lower base layer.

In addition, charges charged in the base layer constituting the flexible substrate 110 may form a back bias to affect the thin film transistor 210. Therefore, it is necessary to arrange a separate metal layer between the flexible substrate 110 and the thin film transistor 210 in order to block the charge charged in the base layer. However, the display device 100 according to an exemplary embodiment of the present specification forms a silicon oxide (SiOx) layer between two base layers, thereby blocking charges charged in the base layer of the flexible substrate 110. Product reliability can be improved. In addition, since the process of forming the metal layer to block the charge charged in the base layer can be omitted, the process can be simplified and the production cost can be reduced.

In the product of the display device using the base layer as the substrate 110, since it is very important to secure the environmental reliability performance and performance reliability of the panel, the display device 100 according to an embodiment of the present specification uses a double base layer. As a substrate, an inorganic insulating layer, for example, a silicon oxide (SiOx) layer, may be disposed between the two base layers to implement a structure for securing product environmental reliability performance. For example, a silicon dioxide (Silica or Silicon Dioxide: SiO2) material may be disposed between the double polyimide (PI) layers.

However, when the flexible substrate 110 has a bending region BA, the adhesion between the silicon oxide (SiOx) layer and the base layer disposed between the two base layers in the bending region BA of the flexible substrate 110 It may be lowered by this moisture. In addition, due to the weak adhesion between the silicon oxide (SiOx) layer and the base layer, the flexible substrate 110 is subjected to stress in the bending area BA, and a problem may arise in lifting the base layer. In addition, reliability of the product may be reduced due to the floating phenomenon of the base layer of the flexible substrate 110.

For example, when a silicon dioxide (SiO ₂ ) layer is disposed between two polyimide (PI) layers as a silicon oxide (SiOx) material, as shown in FIG. 5A, the polyimide (PI) layer and silicon dioxide The (SiO ₂ ) layer may be bonded by bonding oxygen (O) of the silicon dioxide (SiO ₂ ) layer and hydrogen (H) of the polyimide (PI) layer. However, as illustrated in FIG. 5B, the combination of the polyimide (PI) layer and the silicon dioxide (SiO ₂ ) layer is moisture due to moisture penetrated through a process such as a high temperature manufacturing process or a high temperature and high humidity reliability test. (H ₂ O). For example, oxygen (O) of the silicon dioxide (SiO ₂ ) layer can be bonded to hydrogen (H) of moisture (H ₂ O), and hydrogen (H) of the polyimide (PI) layer is water It can bond with oxygen (O) of (H ₂ O). As described above, when the bonding of the polyimide (PI) layer and the silicon dioxide (SiO ₂ ) layer is broken by moisture (H ₂ O), the adhesion between the polyimide (PI) layer and the silicon dioxide (SiO2) layer is weak. It can be done. And, as shown in Figure 5c, as the polyimide (PI) layer and the silicon dioxide (SiO ₂ ) layer is dropped due to weak adhesion due to moisture, a polyimide (PI) layer may be lifted up. .

Accordingly, the display device according to the exemplary embodiment of the present disclosure improves environmental reliability such as moisture penetration, and also has a robust structure for bending, so that an inorganic insulating layer disposed between two base layers is nitrided with a silicon oxide (SiOx) layer. It can be formed of a double layer made of a silicon (SiNx) layer. However, the present invention is not limited thereto, and may be formed of a triple layer composed of a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer. For example, as illustrated in FIG. 4, the substrate 110 of the display device 100 includes a first base layer 110a, a second base layer 110c, and a first base layer 110a and a second. The first inorganic insulating layer 110b formed between the base layers 110c and the second inorganic insulating layer 110d, which is a different material from the first inorganic insulating layer 110b, may be included. In the first inorganic insulating layer 110b and the second inorganic insulating layer 110d, when charge is charged to the first base layer 110a, the charge is charged through the second base layer 110b. 210).

In addition, the first inorganic insulating layer 110b formed between the first base layer 110a and the second base layer 110c may serve to block moisture components from penetrating through the first base layer 110a. have. The first inorganic insulating layer 110b may be a silicon oxide (SiOx) layer having excellent moisture permeation prevention effect. For example, a silicon dioxide (Silica or Silicon Dioxide: SiO ₂ ) material may be formed as the first inorganic insulating layer 110b.

In addition, the second inorganic insulating layer 110d may be disposed between the first base layer 110a and the first inorganic insulating layer 110b. The second inorganic insulating layer 110d may be formed of an inorganic material layer different from the first inorganic insulating layer 110b. The second inorganic insulating layer 110d may be made of a material that may not deteriorate the adhesion with the first base layer 110a due to moisture. Therefore, the second inorganic insulating layer 110d improves adhesion to the first base layer 110a, so that the first base layer 110a is raised in the bending area BA of the flexible substrate 110. Can be prevented. The second inorganic insulating layer 110d may be a silicon nitride (SiNx) layer having excellent adhesion to the base layer. In addition, the second inorganic insulating layer 110d may be disposed only in the bending area BA in the flexible substrate 110. For example, a silicon nitride (SiNx) layer may be disposed between the silicon dioxide (SiO ₂ ) layer and the first polyimid layer 110a only in the bending region of the flexible substrate 110d.

The inorganic insulating layer disposed between the first base layer 110a and the second base layer 110c may be formed as a triple layer. The first inorganic insulating layer 110b may be disposed between the first base layer 110a and the second base layer 110c. In addition, the second inorganic insulating layer 110d may be disposed between the first base layer 110a and the first inorganic insulating layer 110b. In addition, a third inorganic insulating layer may be disposed between the first inorganic insulating layer 110b and the second base layer 110c. The second inorganic insulating layer 110d and the third inorganic insulating layer may be the same material. In addition, the second inorganic insulating layer 110d and the third inorganic insulating layer may be inorganic material layers different from the first inorganic insulating layer 110b. For example, a silicon oxide (SiOx) layer may be disposed between the first base layer 110a and the second base layer 110c. In addition, a silicon nitride (SiNx) layer may be disposed between the first base layer 110a and the silicon oxide (SiOx) layer. In addition, a silicon nitride (SiNx) layer may be disposed between the second base layer 110c and the silicon oxide (SiOx) layer. In addition, the silicon oxide (SiOx) layer may be a silicon dioxide (SiO ₂ ) layer. As such, a silicon nitride (SiNx) layer having excellent adhesion to the base layer is disposed between the silicon oxide (SiOx) layer and the base layer, so that the first base layer 110a in the bending area BA of the flexible substrate 110 is formed. Alternatively, the second base layer 110c may prevent lifting. And, by preventing the lifting of the flexible substrate 110, it is possible to prevent the breakage of the wiring disposed in the bending area BA, and it is possible to produce a product with improved robustness and reliability in the bending structure.

In addition, the second inorganic insulating layer 110d and the third inorganic insulating layer may be disposed only in the bending area BA of the flexible substrate 110. For example, in the flexible substrate 110, silicon nitride (SiNx) may be disposed between the silicon oxide (SiOx) layer and the first base layer 110a only in the bending area BA. In addition, silicon nitride (SiNx) may be further disposed between the second base layer 110c and the silicon oxide (SiOx) layer only in the bending area BA in the flexible substrate 110.

The buffer layer 111 may be disposed on the substrate 110. As illustrated in FIG. 4, a buffer layer 110 may be disposed on the flexible substrate 110 corresponding to the display area DA. And, the buffer layer 110 may be disposed on the flexible substrate 110 corresponding to the bending area BA. ) May not be disposed The buffer layer 111 disposed in the display area (.DA) of the flexible substrate 110 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. The buffer layer 111 may improve adhesion between the layers formed on the buffer layer 111 and the substrate 110, and may serve to block alkali components, etc., from the substrate 110. The buffer layer 111 is not an essential component, and may be omitted based on the type and material of the substrate 110 and the structure and type of the thin film transistor.

According to the exemplary embodiment of the present specification, the buffer layer 111 may be formed of multiple layers of alternating silicon dioxide (SiO ₂ ) and silicon nitride (SiNx). For example, the buffer layer 111 may be formed of n + 1 layers. Here, n means an even number including 0 such as 0, 2, 4, 6, and 8. Therefore, when n = 0, the buffer layer 111 is formed as a single layer. In addition, the buffer layer 111 may be silicon nitride (SiNx) or silicon oxide (SiOx). When n = 2, the buffer layer 111 may be formed of a triple layer. When the buffer layer 111 is formed of a triple layer, the upper layer and the lower layer may be silicon oxide (SiOx), and the intermediate layer disposed between the upper layer and the lower layer may be silicon nitride (SiNx). In addition, when n = 4, the buffer layer 111 may be formed of five layers. When the buffer layer 111 is formed of five layers, as shown in FIG. 1, the first buffer layer 111a may be formed on the substrate 110. In addition, the first buffer layer 111a may be formed of silicon dioxide (SiO ₂ ) material. Further, the second buffer layer 111b may be formed of a silicon nitride (SiNx) material, and may be disposed on the first buffer layer 111a. In addition, the third buffer layer 111c may be formed of a silicon dioxide (SiO2) material, and may be disposed on the second buffer layer 111b. Further, the fourth buffer layer 111d may be formed of a silicon nitride (SiNx) material, and may be disposed on the third buffer layer 111c. In addition, the fifth buffer layer 111e may be formed of silicon dioxide (SiO ₂ ) material, and may be disposed on the fourth buffer layer 111d. As described above, when n is an even number greater than or equal to 2, the buffer layer 111 may be formed of multiple layers of alternating silicon oxide (SiOx) and silicon nitride (SiNx). In addition, the uppermost layer and the lowermost layer of the multi-layer buffer layer 111 may be formed of silicon oxide (SiOx) material. For example, the buffer layer 111 formed of a plurality of layers includes an upper layer contacting the active layer 211 of the thin film transistor 210, a lower layer contacting the substrate 110, and an intermediate layer positioned between the upper layer and the lower layer. can do. Further, the upper layer and the lower layer may be formed of a silicon oxide (SiOx) material. In addition, the upper layer of the buffer layer 111 made of multiple layers may be formed thicker than the thickness of the lower layer and the intermediate layer. The thickness of the upper layer contacting the active layer 211 of the thin film transistor 210 in the buffer layer 111 formed of a plurality of layers may be greater than the thickness of the lower layer and the intermediate layer of the buffer layer 111. For example, as illustrated in FIG. 1, when the buffer layer 111 is a five-layered layer, the fifth buffer layer 111e in contact with the active layer 211 may be an upper layer. In addition, the first buffer layer 111a in contact with the substrate 110 may be a lower layer. Further, the second buffer layer 111b, the third buffer layer 111c, and the fourth buffer layer 111d disposed between the first buffer layer 111a and the fifth buffer layer 111e may be intermediate layers. Here, the thickness of the fifth buffer layer 111e, which is the upper layer, is the thickness of the first buffer layer 111a, which is the lower layer, and the second buffer layer 111b, the third buffer layer 111c, and the fourth buffer layer 111d, which are intermediate layers, respectively. It can be greater than the thickness of. More specifically, the thickness of the fifth buffer layer 111e may be 3000Å, and the first buffer layer 111a may be formed of 1000Å. In addition, the thicknesses of the second buffer layer 111b, the third buffer layer 111c, and the fourth buffer layer 111d may also be formed to 1000 mm 2, respectively.

In addition, in the buffer layer 111 formed of a plurality of layers, all of the plurality of other layers except the upper layer contacting the active layer 211 of the thin film transistor 210 may have the same thickness. For example, the first buffer layer 111a, the second buffer layer 111b, the third buffer layer 111c, and the fourth buffer layer 111d except for the fifth buffer layer 111e in contact with the active layer 211 The thickness can all be the same.

In the display area DA of the flexible substrate 110, the thin film transistor 210 may be disposed on the buffer layer 111. The thin film transistor 210 may include an active layer 211, a gate electrode 214, a source electrode 212 and a drain electrode 213. Here, depending on the design of the pixel circuit, the source electrode 212 may be a drain electrode, and the drain electrode 213 may be a source electrode. In the display area DA of the flexible substrate 110, the active layer 211 of the thin film transistor 210 may be disposed on the buffer layer 111.

The active layer 211 may include Low Temperature Poly-Silicon (LTPS). Since the polysilicon material has high mobility (over 100 cm 2 / Vs), low energy consumption, and excellent reliability, it can be applied to a gate driver and / or a multiplexer (MUX) for driving elements driving thin film transistors for display elements. , May be applied as an active layer of a driving thin film transistor in the display device according to the embodiment, but is not limited thereto. For example, it may be applied as an active layer of a switching thin film transistor according to the characteristics of the display device. An amorphous silicon (a-Si) material is deposited on the buffer layer 111, polysilicon is formed in a manner of performing a dehydrogenation process and a crystallization process, and the active layer 211 can be formed by patterning the polysilicon. . The active layer 211 may include a channel region 211a in which a channel is formed when the thin film transistor 210 is driven, a source region 211b and a drain region 211c on both sides of the channel region 211a. The source region 211b refers to a portion of the active layer 211 connected to the source electrode 212, and the drain region 211c refers to a portion of the active layer 211 connected to the drain electrode 213. The source region 211b and the drain region 211c may be formed by ion doping (impurity doping) of the active layer 211. The source region 211b and the drain region 211c may be generated by ion doping the polysilicon material, and the channel region 211a may mean a portion that is not ion-doped but is left as a polysilicon material.

The active layer 211 may be formed of an oxide semiconductor. Since the oxide semiconductor material has a larger bandgap compared to the silicon material, electrons cannot cross the bandgap in the off state, and accordingly, the off-current is low. Therefore, the thin film transistor including the active layer made of an oxide semiconductor may be suitable for a switching thin film transistor having a short on time and a long off time, but is not limited thereto. Depending on the characteristics of the display device, it may be applied as a driving thin film transistor. In addition, since the off-current is small, the size of the auxiliary capacitor can be reduced, which is suitable for a high-resolution display device. For example, the active layer 211 is made of a metal oxide, and may be made of various metal oxides, such as indium-gallium-zinc-oxide (IGZO). The active layer 211 of the thin film transistor 210 has been described as being formed on the basis of the IGZO layer on the assumption that it is made of IGZO among various metal oxides, but is not limited thereto and is not IGZO but indium-zinc-oxide (IZO), IGTO (indium-gallium-tin-oxide), or other metal oxides such as indium-gallium-oxide (IGO). The active layer 211 may be formed by depositing a metal oxide on the buffer layer 111, performing a heat treatment process for stabilization, and then patterning the metal oxide.

In the display area DA of the flexible substrate 110, the gate insulating layer 112 may be disposed on the active layer 211 of the thin film transistor 210. The gate insulating layer 112 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. In the gate insulating layer 112, each of the source electrode 212 and the drain electrode 133 of the thin film transistor 210 has a source region 211b and a drain region 211c of the active layer 211 of the thin film transistor 210, respectively. A contact hole to be connected to may be formed. In addition, the gate insulating layer 112 may not be disposed in the bending area BA of the flexible substrate 110.

In the display area DA of the flexible substrate 110, the gate electrode 214 of the thin film transistor 210 may be disposed on the gate insulating layer 112. The gate electrode 214 may be any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al) chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or It may be formed of a single layer or a multi-layer made of an alloy of. The gate electrode 214 may be formed on the gate insulating layer 112 to overlap the channel region 211a of the active layer 211 of the thin film transistor 210.

In the display area DA of the flexible substrate 110, an interlayer insulating layer 113 may be disposed on the gate insulating layer 112 and the gate electrode 214. The interlayer insulating layer 113 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or multiple layers thereof. A contact hole for exposing the source region 211b and the drain region 211c of the active layer 211 of the thin film transistor 210 may be formed in the interlayer insulating layer 113. In addition, the interlayer insulating layer 113 may not be disposed in the bending area BA of the flexible substrate 110.

In the display area DA of the flexible substrate 110, the source electrode 212 and the drain electrode 213 of the thin film transistor 210 may be disposed on the interlayer insulating layer 113. The source electrode 212 and the drain electrode 213 of the thin film transistor 210 may be connected to the active layer 211 of the thin film transistor 210 through contact holes formed in the gate insulating layer 112 and the interlayer insulating layer 113. Can be. Accordingly, the source electrode 212 of the thin film transistor 210 may be connected to the source region 211b of the active layer 211 through contact holes formed in the gate insulating layer 112 and the interlayer insulating layer 113. Further, the drain electrode 213 of the thin film transistor 210 may be connected to the drain region 211c of the active layer 211 through contact holes formed in the gate insulating layer 112 and the interlayer insulating layer 113.

In addition, in the bending area BA of the flexible substrate 110, the first signal wiring 310 may be disposed on the flexible substrate 110. The first signal wiring 310 disposed in the bending area BA of the flexible substrate 110 may be disposed to contact the upper surface of the flexible substrate 110. For example, the first signal wiring 310 may be arranged to contact the upper surface of the flexible substrate 110 corresponding to the bending area BA. The first signal wiring 310 disposed in the bending area BA of the flexible substrate 110 may contact the second base layer 110c of the flexible substrate 110.

In addition, the first signal wiring 310 may be formed by the same process as the source electrode 212 and the drain electrode 213 of the thin film transistor 210. In addition, the first signal wiring 310 may be formed of the same material as the source electrode 212 and the drain electrode 213 of the thin film transistor 210.

The source electrode 212 and the drain electrode 213 of the thin film transistor 210 and the first signal wiring 310 are molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al) chromium (Cr) , Gold (Au), nickel (Ni), neodymium (Nd), or may be formed of a single layer or multiple layers made of an alloy thereof. For example, the source electrode 212 and the drain electrode 213 of the thin film transistor 210 may be formed of a three-layer structure of titanium (Ti) / aluminum (Al) / titanium (Ti) made of a conductive metal material, It is not limited to this.

A protective layer 114 may be disposed on the source electrode 212 and the drain electrode 213 of the thin film transistor 210 in the display area DA of the flexible substrate 110. The protective layer 113 may be composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. A contact hole for exposing the drain electrode 213 of the thin film transistor 210 may be formed in the interlayer insulating layer 114. In addition, the protective layer 114 may not be disposed in the bending area BA of the flexible substrate 110.

In the display area DA of the flexible substrate 110, the first planarization layer 115 may be disposed on the protective layer 114. As shown in FIG. 4, a contact hole for exposing the drain electrode 213 may be formed in the first planarization layer 115. The first planarization layer 115 may be an organic material layer for planarizing and protecting an upper portion of the thin film transistor 210. For example, the first planarization layer 115 may be made of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc. It can be formed of organic materials.

In the bending area BA of the flexible substrate 110, the first planarization layer 115 may be disposed on the first signal line 310. In addition, in the bending area BA of the flexible substrate 110, the first planarization layer 115 may be disposed to directly contact the upper surface of the first signal wiring 310 and the upper surface of the flexible substrate 110. . For example, the first planarization layer 115 may be disposed to contact the upper surface of the first signal line 310 disposed in the bending area BA. In addition, the first planarization layer 115 may be disposed to contact the upper surface of the flexible substrate 110 corresponding to the bending area BA. In the bending area BA of the flexible substrate 110, the first planarization layer 115 may contact the second base layer 110c of the flexible substrate 110.

The auxiliary electrode 220 may be disposed on the first planarization layer 115 in the display area DA of the flexible substrate 110. In addition, the auxiliary electrode 220 may be connected to the drain electrode 213 of the thin film transistor 210 through the contact hole of the first planarization layer 115. The auxiliary electrode 220 may serve to electrically connect the thin film transistor 210 and the first electrode 231. The auxiliary electrode 220 is one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al) chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or these It may be formed of a single layer or a multi-layer made of an alloy of. The auxiliary electrode 220 may be formed of the same material as the source electrode 212 and the drain electrode 213 of the thin film transistor 210.

In addition, in the bending area BA of the flexible substrate 110, the second signal line 320 may be disposed on the first planarization layer 115. In addition, the second signal wiring 320 may be disposed to directly contact the upper surface of the first planarization layer 115. For example, the second signal line 320 disposed in the bending area BA may be disposed to contact the upper surface of the first planarization layer 115.

In addition, the second signal wiring 320 may be formed in the same process as the auxiliary electrode 220 disposed in the display area DA. In addition, the second signal wiring 320 may be formed of the same material as the auxiliary electrode 220.

In the display area DA of the flexible substrate 110, the second planarization layer 116 may be disposed on the auxiliary electrode 220 and the first planarization layer 115. In addition, as illustrated in FIG. 4, a contact hole for exposing the auxiliary electrode 220 may be formed in the second planarization layer 116. The second planarization layer 116 may be an organic material layer for planarizing the upper portion of the thin film transistor 210. For example, the second planarization layer 116 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin, etc. It can be formed of an organic material.

In addition, the second planarization layer 116 may be disposed on the second signal wiring 320 and the first planarization layer 115 in the bending area BA of the flexible substrate 110. In addition, in the bending area BA of the flexible substrate 110, the second planarization layer 115 may be disposed to directly contact the top surface of the second signal wiring 320 and the top surface of the first planarization layer 115. Can be. For example, the second planarization layer 116 may be disposed to contact the upper surface of the second signal line 320 disposed in the bending area BA. In addition, the second planarization layer 116 may be disposed to contact the upper surface of the first planarization layer 115 corresponding to the bending area BA.

In the display area DA of the flexible substrate 110, the light emitting device 230 may be disposed on the second planarization layer 116. The light emitting device 230 may include a first electrode 231, a light emitting structure 232, and a second electrode 233. In addition, the light emitting device 230 may not be disposed in the bending area BA of the flexible substrate 110.

The first electrode 231 may be disposed on the second planarization layer 116. The first electrode 231 may be electrically connected to the auxiliary electrode 220 through a contact hole formed in the second planarization layer 116. Accordingly, the first electrode 231 may be electrically connected to the thin film transistor 210 by being connected to the auxiliary electrode 220 through a contact hole formed in the second planarization layer 116.

The first electrode 231 may be formed in a multi-layer structure including a transparent conductive film and an opaque conductive film having high reflection efficiency. The transparent conductive film may be formed of a material having a relatively large work function value, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). In addition, the opaque conductive film may be formed of a single layer or a multilayer structure including Al, Ag, Cu, Pb, Mo, and Ti or alloys thereof. For example, the first electrode 231 may be formed in a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially stacked. However, the present invention is not limited thereto, and a transparent conductive film and an opaque conductive film may also be formed in a stacked structure.

Since the display device 100 according to the exemplary embodiment of the present specification is a top emission display device (indicated by an arrow in the drawing), the first electrode 231 may be an anode electrode. When the display device 100 is a bottom emission, the first electrode 231 disposed on the second planarization layer 116 may be a cathode electrode.

The bank 117 may be disposed on the first electrode 231 and the second planarization layer 116. An opening for exposing the first electrode 231 may be formed in the bank 117. The bank 117 may define a light emitting region of the display device 100, and thus may be referred to as a pixel defining layer. A spacer 118 may be further disposed on the bank 117. In addition, the light emitting structure 200 including the light emitting layer may be further disposed on the first electrode 231.

The light emitting structure 232 may be formed on the first electrode 231 by being stacked in the order of a hole layer, a light emitting layer, and an electron layer. In addition, the light emitting structure 232 may include first and second light emitting structures facing each other with a charge generating layer interposed therebetween. In this case, one light emitting layer of the first and second light emitting structures generates blue light, and the other light emitting layer of the first and second light emitting structures generates yellow-green light, thereby allowing white light through the first and second light emitting structures. This can be generated. The white light generated by the light emitting structure 232 may be incident on a color filter positioned above the light emitting structure 232 to implement a color image. In addition, a color image may be implemented by generating color light corresponding to each sub-pixel in each light emitting structure 232 without a separate color filter. That is, the light emitting structure 232 of the red (R) sub pixel generates red light, the light emitting structure 232 of the green (G) sub pixel generates green light, and the light emitting structure 232 of the blue (B) sub pixel generates blue light. You may.

The second electrode 233 may be further disposed on the light emitting structure 232. The second electrode 233 may be disposed on the light emitting structure 232 to face the first electrode 231 with the light emitting structure 232 therebetween. In the display device 100 according to the exemplary embodiment of the present specification, the second electrode 233 may be a cathode electrode.

In the display area DA of the flexible substrate 110, the encapsulation layer 240 may be disposed on the light emitting device 230. For example, an encapsulation layer 240 that inhibits moisture penetration may be further disposed on the second electrode 210. In addition, the encapsulation layer 240 may not be disposed in the bending area BA of the flexible substrate 110.

The encapsulation layer 240 may include a first inorganic encapsulation layer 241, a second organic encapsulation layer 242, and a third inorganic encapsulation layer 243. The first inorganic encapsulation layer 241 of the encapsulation layer 240 may be disposed on the second electrode 210. In addition, the second organic encapsulation layer 242 may be disposed on the first inorganic encapsulation layer 241. Also, the third inorganic encapsulation layer 243 may be disposed on the second inorganic encapsulation layer 242. The first inorganic encapsulation layer 241 and the third inorganic encapsulation layer 243 of the encapsulation layer 240 may be formed of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). The second inorganic encapsulation layer 242 of the encapsulation layer 240 is an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, and a polyimide resin resin).

The display device according to the exemplary embodiment of the present specification may be described as follows.

The display device according to the exemplary embodiment of the present specification may include a display area displaying a screen and a bending area adjacent to the display area and bent. And, a first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and between the first base layer and the first inorganic insulating layer A flexible substrate including a second inorganic insulating layer made of a material different from the first inorganic insulating layer, a buffer layer on the second base layer corresponding to the display region, and a second base layer on the second base layer corresponding to the bending region 1 signal wiring, a thin film transistor on a buffer layer disposed in the display area, a thin film transistor and a first planarization layer on the first signal wiring, and a contact hole of the first planarization layer disposed on the first planarization layer corresponding to the display area It may include an auxiliary electrode connected to the thin film transistor, a second signal wiring on the first planarization layer corresponding to the bending region, and a second planarization layer on the auxiliary electrode and the second signal wiring.

According to the exemplary embodiment of the present specification, the first inorganic insulating layer may be a silicon oxide (SiOx) layer, and the second inorganic insulating layer may be a silicon nitride (SiNx) layer.

According to the exemplary embodiment of the present specification, the first inorganic insulating layer may be a silicon dioxide (SiO ₂ ) layer.

According to the exemplary embodiment of the present specification, a third inorganic insulating layer disposed between the second base layer and the first inorganic insulating layer may be further included.

According to the exemplary embodiment of the present specification, the third inorganic insulating layer may be a silicon nitride (SiNx) layer.

According to the exemplary embodiment of the present specification, the first signal wiring disposed in the bending region directly contacts the upper surface of the second base layer, and the second signal wiring disposed in the bending region directly contacts the upper surface of the first flattening layer. can do.

According to the exemplary embodiment of the present specification, the second inorganic insulating layer may be disposed only in the bending region.

According to the exemplary embodiment of the present specification, the second inorganic insulating layer and the third inorganic insulating layer may be disposed only in the bending region.

The display device according to the exemplary embodiment of the present specification includes a first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and the first base It may include a flexible substrate including a second inorganic insulating layer disposed between the layer and the first inorganic insulating layer, a thin film transistor on the flexible substrate, and a light emitting device on the thin film transistor.

According to the exemplary embodiment of the present specification, the first inorganic insulating layer and the second inorganic insulating layer may be different material layers.

According to the exemplary embodiment of the present specification, the first inorganic insulating layer may be a silicon oxide (SiOx) layer, and the second inorganic insulating layer may be a silicon nitride (SiNx) layer.

According to the exemplary embodiment of the present specification, the first inorganic insulating layer may be a silicon dioxide (SiO ₂ ) layer.

According to the exemplary embodiment of the present specification, a third inorganic insulating layer disposed between the second base layer and the first inorganic insulating layer may be further included.

According to the exemplary embodiment of the present specification, the third inorganic insulating layer and the second inorganic insulating layer may be the same material layer.

According to the exemplary embodiment of the present specification, the third inorganic insulating layer may be a silicon nitride (SiNx) layer.

The embodiments of the present invention have been described in more detail with reference to the accompanying drawings, but the present invention is not necessarily limited to these embodiments, and may be variously modified without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of protection of the present invention should be interpreted by the claims, and all technical spirits within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

100: display device
DA: Display area
NDA: Non-display area
BA: bending area
110: flexible substrate
111: buffer layer
112: gate insulating layer
113: interlayer insulating layer
114: protective layer
115: first planarization layer
116: second planarization layer
117: bank
118: spacer
210: thin film transistor
230: light emitting element
240: sealing layer
121: VDD
122: VSS
123: GIP
124: ESD
125: Gate power line
126: crack prevention structure
127: Data wiring
131: support layer
133: micro coating layer
134: adhesive
135: pad
137: driver IC
151: Notch

Claims (15)

In the display device including a display area for displaying a screen and a bending area adjacent to and bent to the display area,
A first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and the first base layer and the first inorganic A flexible substrate disposed between insulating layers and including a second inorganic insulating layer made of a different material from the first inorganic insulating layer;
A buffer layer on the second base layer corresponding to the display area, and a first signal wiring on the second base layer corresponding to the bending area;
A thin film transistor on the buffer layer disposed in the display area;
A first planarization layer on the thin film transistor and the first signal wiring;
An auxiliary electrode disposed on the first planarization layer corresponding to the display area and connected to the thin film transistor through a contact hole of the first planarization layer, and a second on the first planarization layer corresponding to the bending area Signal wiring; And
A display device including the auxiliary electrode and a second planarization layer on the second signal wiring. According to claim 1,
The first inorganic insulating layer is a silicon oxide (SiOx) layer, and the second inorganic insulating layer is a silicon nitride (SiNx) layer. According to claim 2,
The first inorganic insulating layer is a silicon dioxide (SiO ₂ ) layer, a display device. According to claim 2,
And a third inorganic insulating layer disposed between the second base layer and the first inorganic insulating layer. According to claim 4,
The third inorganic insulating layer is a silicon nitride (SiNx) layer, a display device. According to claim 1,
The first signal wiring disposed in the bending region directly contacts the upper surface of the second base layer, and the second signal wiring disposed in the bending region directly contacts the upper surface of the first flattening layer, Display device. According to claim 1,
The second inorganic insulating layer is disposed only in the bending area. According to claim 4,
The second inorganic insulating layer and the third inorganic insulating layer are disposed only in the bending region. A first base layer, a second base layer on the first base layer, a first inorganic insulating layer disposed between the first base layer and the second base layer, and the first base layer and the first inorganic A flexible substrate including a second inorganic insulating layer disposed between the insulating layers;
A thin film transistor on the flexible substrate; And
And a light emitting element on the thin film transistor. The method of claim 9,
The first inorganic insulating layer and the second inorganic insulating layer are different material layers, the display device. The method of claim 10,
The first inorganic insulating layer is a silicon oxide (SiOx) layer, and the second inorganic insulating layer is a silicon nitride (SiNx) layer. The method of claim 11,
The first inorganic insulating layer is a silicon dioxide (SiO2) layer, a display device. The method of claim 10,
And a third inorganic insulating layer disposed between the second base layer and the first inorganic insulating layer. The method of claim 13,
The third inorganic insulating layer and the second inorganic insulating layer are the same material layer, a display device. The method of claim 13,
The third inorganic insulating layer is a silicon nitride (SiNx) layer, a display device.

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