KR20200048644A - Method of Peeling Lamination Structure, Method of Repairing Organic Light Emitting Device and Apparatus of Peeling Lamination Structure - Google Patents

Abstract

A method for peeling a lamination structure according to an embodiment of the present invention may comprise a process of providing a lamination structure which comprises a first unit structure comprising a first layer, and a second unit structure having a second layer with different coefficient of thermal expansion from that of the first layer; a process of transferring thermal energy by making at least a part of a region on a surface of the lamination structure irradiated with laser; and a process of separating the second unit structure from the first unit structure by the thermal expansion difference between the first unit structure and the second unit structure by the thermal energy. According to the present invention, the lamination structure can be partially peeled.

Description

Lamination structure peeling method, organic light emitting device repair method, and stacked structure peeling device {Method of Peeling Lamination Structure, Method of Repairing Organic Light Emitting Device and Apparatus of Peeling Lamination Structure}

The present invention relates to a method for peeling a layered structure, a method for repairing an organic light emitting device, and a device for peeling a layered structure, and more specifically, a layered structure peeling method for irradiating a laser to the surface of the layered structure, a method for repairing an organic light emitting device, and a layered structure peeling It is about the device.

In many fields, such as LCD, OLED, PDP, LED, semiconductor, and secondary battery electrodes, many products using a multilayer structure composed of multiple layers are being made, and related technologies are being developed. Although it is a laminate structure that is essentially used in various fields, when manufacturing a laminate structure, there are cases where defects occur in the manufactured laminate structure by generating particles or foreign substances between the laminates constituting the multilayer laminate structure. In some cases, the laminate may need to be peeled off during the process of making it. In the peeling process, physical or chemical methods can also be peeled off to affect the periphery of the stacked product. In the related art, defects caused by foreign substances or the like have been directly destroyed by foreign substances, or a laminated structure having defects cannot be used and discarded.

Among them, for example, an organic light emitting display device (OLED), the organic light emitting display device has a property of being deteriorated by external moisture or oxygen, and thus, an organic light emitting device to protect the organic light emitting device from external moisture or oxygen. Should be sealed using a thin film encapsulation layer. However, in recent years, as the size of glass is increased when manufacturing a panel that is the base of an organic light emitting device, the probability of occurrence of a defective panel is gradually increasing due to particles or thermal deformation generated during the process. Among them, prevention of moisture penetration into the organic light emitting display device Particles formed in the process of depositing a thin film encapsulation layer for a pinhole cause the moisture to penetrate, thereby causing an excitation of the thin film encapsulation layer. Due to this excitation phenomenon, there is a case in which the thin film encapsulation layer is destroyed during the transfer process or LLO process in the post-process process, and a defect occurs due to the residue of the broken film encapsulation layer attached to the surrounding normal cells.

Patent Publication No. 10-2013-0134467

The present invention provides a laminated structure peeling method and a peeling device for peeling a part of the stacked structure by irradiating a laser on the surface of the stacked structure to generate different thermal expansion differences.

The present invention is to provide a method for repairing an organic light emitting device by irradiating a laser on the surface of the organic light emitting device structure to generate a difference in thermal expansion and peeling a thin film encapsulation layer having defects from the organic light emitting device structure.

A method of peeling a laminated structure according to an embodiment of the present invention includes a first unit structure including a first layer, and a second unit structure including a second unit structure having a second layer having a different thermal expansion coefficient from the first layer. The process of providing; A process of transmitting thermal energy by irradiating a laser to at least a part of the surface of the laminated structure; And a process in which at least a portion of the second unit structure is separated from the first unit structure by a difference in thermal expansion between the first unit structure and the second unit structure due to the thermal energy.

And irradiating a laser along the edge of the region to determine a peeling region.

The process of determining the exfoliation area or changing the accumulated energy of the laser used in the process of transferring the thermal energy may further include.

The accumulated energy of the laser used in the process of determining the peeling area may be greater than the accumulated energy of the laser used in the process of transferring the thermal energy.

The process of changing the accumulated energy includes: adjusting the energy density of the laser beam irradiated on the surface of the laminated structure; Adjusting the overlap ratio of the laser beam irradiated on the surface of the laminated structure; It may include at least one of.

The laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation area is a combination of a pulse laser, or the laser used in the process of transferring the thermal energy is of a first pulse width. It is a pulse laser, and the laser used in the process of determining the peeling area may be a combination of a pulse laser having a second pulse width having a shorter pulse width than a pulse laser having a first pulse width.

The method of repairing an organic light emitting device according to an embodiment of the present invention includes an organic light emitting laminate, a cover layer provided on the organic light emitting laminate to improve optical properties, and a thin film formed on the cover layer to prevent the penetration of moisture Providing an organic light emitting device structure including an encapsulation layer; Identifying a defect formed in the thin film encapsulation layer; A process of transmitting thermal energy by irradiating a laser to at least a part of the surface of the organic light emitting device structure including the identified defect; And a process in which the cover layer and the thin film encapsulation layer have different coefficients of thermal expansion, and at least a part of the thin film encapsulation layer is separated from the cover layer by a difference in thermal expansion due to the thermal energy.

A plurality of organic light emitting device structures are provided, and each of the organic light emitting device structures may be independently provided by a separation unit provided between the plurality of organic light emitting device structures.

The cover layer is made of fluoride, and the lowermost layer of the thin film encapsulation layer in which the organic film and the inorganic film are alternately stacked may be made of an inorganic film.

The process of determining a peeling area by irradiating a laser along an edge of a certain area of the organic light emitting device structure including the defect may be further included.

The process of determining the exfoliation area or changing the accumulated energy of the laser used in the process of transferring the thermal energy may further include.

The accumulated energy of the laser used in the process of determining the peeling area may be greater than the accumulated energy of the laser used in the process of transferring the thermal energy.

The process of changing the accumulated energy includes: adjusting the energy density of the laser irradiated on the surface of the organic light emitting device structure; Controlling the overlapping rate of the laser irradiated on the surface of the organic light emitting device structure; may include at least one of.

The laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation area is a pulse laser, or the laser used in the process of transferring the thermal energy is a pulse laser of a first pulse width. In addition, the laser used in the process of determining the peeling area may be a pulse laser having a second pulse width having a shorter pulse width than a pulse laser having a first pulse width.

A laminate structure repair apparatus according to an embodiment of the present invention includes a first unit structure including a first layer, and a second unit structure including a second unit structure having a second layer having a different thermal expansion coefficient from the first layer. Support for supporting; A mode selector which selects any one of a plurality of irradiation modes having different accumulated energy of the laser; A control unit generating a laser control signal according to a mode selected by the mode selection unit; And a laser irradiation unit that receives the laser control signal and irradiates the surface of the stacked structure with a laser of accumulated energy corresponding to the selected mode, wherein the plurality of irradiation modes include a peeling mode, and a peeling mode in the mode selector When is selected, the laser irradiation unit transmits thermal energy by irradiating a laser to at least a portion of the surface of the stacked structure, and thus, from the first unit structure due to a difference in thermal expansion between the first unit structure and the second unit structure due to the thermal energy. At least a part of the second unit structure may be peeled off.

The plurality of irradiation modes may further include a peeling region determination mode having an accumulated energy greater than the accumulated energy of the laser used in the peeling mode.

When the laser irradiation unit is selected as the separation region determination mode, the laser may irradiate the laser along the edge of the region, thereby removing the edge of the second unit structure.

The control unit may include a cumulative energy variation unit that changes the accumulated energy of the laser according to the plurality of irradiation modes.

The cumulative energy fluctuation unit, an energy density changing unit for changing the energy density of the laser irradiated to the laser irradiation surface; And an irradiation overlapping rate changing unit for changing the irradiation overlapping rate of the laser irradiated onto the laser irradiation surface. It may include at least one of.

The laser used in the peeling mode is a continuous laser and the laser used in the peeling area determination mode is a combination of a pulsed laser, or the laser used in the peeling mode is a pulse laser having a first pulse width, and the peeling area The laser used in the crystal mode may be a combination of a pulse laser having a second pulse width having a shorter pulse width than a pulse laser having a first pulse width.

According to the method of peeling a laminated structure and a peeling device according to an embodiment of the present invention, the laser beam is irradiated on the surface of the laminated structure including a plurality of unit structures to transmit thermal energy, and the unit structure is peeled off itself from the stacked structure by different thermal expansion coefficients. Can be.

That is, the layers included in the plurality of unit structures have different coefficients of thermal expansion, and when a laser is irradiated to a unit structure including a layer having a relatively large coefficient of thermal expansion, and heat energy is transferred, the unit structure is thermally expanded by each layer. And the unit structure including the layer having a relatively large coefficient of thermal expansion can be peeled off from the laminated structure by the difference in thermal expansion.

In addition, it is also possible to exfoliate only a portion of the stacked structure by transferring heat energy to at least a portion of the entire region, and to separate the separated region from the layered structure by irradiating a laser having a higher cumulative energy than a laser transmitting thermal energy along the edge of the partial region. By determining, only that portion can be selectively removed from the laminate in a desired area without thermal or physical influence.

In addition, since the laser can be irradiated locally and can provide thermal energy with little thermal deformation by the laser, it can be easily used in processes requiring thin film separation regardless of the substrate.

In the method of repairing an organic light emitting device according to the present invention, a defect formed in a thin film encapsulation layer is identified, and thermal energy is generated due to different thermal expansion coefficients of the thin film encapsulation layer including the defects by irradiating a laser to at least a certain region including the defects to transfer thermal energy. By doing so, it can be peeled off from the organic light emitting device structure itself.

That is, the organic light emitting device structure includes a cover layer and a thin film encapsulation layer having different coefficients of thermal expansion from each other, and when heat energy is transmitted by irradiating a laser to the surface of the thin film encapsulation layer having a relatively high coefficient of thermal expansion, the thin film encapsulation layer is an organic light emitting device. It can selectively peel itself off from the structure without thermal or physical influence. Therefore, the rate of occurrence of defective panels during post-processing is reduced, which can improve process yield and reduce costs.

In addition, since the laser can be irradiated locally and can provide thermal energy with little thermal deformation by the laser, it may not affect other than the thin film encapsulation layer that is peeled off.

In addition, as described above, heat energy may be transferred to at least a part of the region including the defect, not the entire region of the organic light emitting device structure, and only a portion of the region may be peeled off, and cumulative energy is higher than a laser that transmits the heat energy along the edge of the region including the defect. By irradiating a high laser, a separation region separated from the organic light emitting element structure may be determined, and only a portion thereof may be removed from the organic light emitting element structure.

1 is a flow chart showing a method of peeling a laminate according to an embodiment of the present invention.
2 is an image in which a first unit structure according to an embodiment of the present invention is separated from a second unit structure.
3 is an image showing a process of determining a peeling area and transferring heat energy according to an embodiment of the present invention.
Figure 4 is a flow chart showing a method of repairing an organic light emitting device according to an embodiment of the present invention.
5 is an image showing the appearance of the organic light emitting device structure and the thin film encapsulation layer in the organic light emitting device structure.
Figure 6 is a block diagram showing a laminate structure peeling device according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the scope of the invention to those skilled in the art is completely It is provided to inform you. In the description, the same reference numerals are assigned to the same components, and the drawings may be exaggerated in size in order to accurately describe embodiments of the present invention, and the same reference numerals in the drawings refer to the same elements.

1 is a flow chart showing a method of peeling a laminated structure 100 according to an embodiment of the present invention, Figure 2 is a first unit structure 110 according to an embodiment of the present invention is separated from the second unit structure 120 Represents an image. 3 is an image showing a process of determining a peeling area and transferring heat energy according to an embodiment of the present invention.

Referring to FIG. 1, a method of peeling a laminated structure 100 according to an embodiment of the present invention includes a first unit structure 110 including a first layer, and a second layer having a different thermal expansion coefficient from the first layer. Providing a stacked structure 100 including a second unit structure 120 having a (S10); A process of transmitting thermal energy by irradiating a laser to at least a part of the surface of the laminated structure 100 (S20); And at least a part of the second unit structure 120 is separated from the first unit structure 110 by a difference in thermal expansion between the first unit structure 110 and the second unit structure 120 due to the thermal energy. Process (S30); may include.

First, a stacked structure 100 including a first unit structure 110 including a first layer and a second unit structure 120 having a second layer having a different thermal expansion coefficient from the first layer is provided. Proceed to the process of providing (S10).

The first unit structure 110 may be composed of a single layer or multiple layers, and may include a first layer. The second unit structure 120 may also be composed of a single layer or multiple layers, of which the second layer has a different coefficient of thermal expansion from the first layer. The stacked structure according to the embodiment of the present invention may be sufficiently thick in the thickness of the first layer and the second layer, and the first layer and the second layer may be provided adjacent to each other or may be provided in direct contact with each other, and The thermal expansion coefficient may be larger than the first layer. Therefore, the first unit structure and the second unit structure may be determined by the first layer and the second layer, respectively. In addition, the first unit structure 110 and the second unit structure 120 may be coupled with relatively weak bonding force.

Next, a process of transferring thermal energy by irradiating a laser to at least a portion of the surface of the stacked structure 100 is performed (S20).

Thermal energy may be transferred by irradiating a laser to at least a portion of the surface of the first unit structure 110 or the second unit structure 120 constituting the stacked structure 100. In addition, heat energy may be transferred by irradiating a laser to at least a portion of the surface of the first unit structure 110 or the second unit structure 120. According to an embodiment of the present invention, thermal energy may be transferred by irradiating a laser to at least a portion of the surface of the second unit structure 120 including the second layer having a relatively high coefficient of thermal expansion. However, this is only an example, and heat energy can be transferred by irradiating a laser to another unit structure having a relatively larger coefficient of thermal expansion. On the other hand, when the laser is irradiated to at least a part of the surface of the layered structure 100, the laser may be irradiated to at least a part of the area by adjusting the movement path of the laser irradiated in the form of a dot to the specific area, or may be in the form of a line beam or surface The laser may be irradiated to at least some regions to transfer thermal energy. Referring to FIG. 3 (b), it is possible to irradiate the laser to at least a part of the entire area so that heat energy can be evenly transmitted. In addition, since the laser can be irradiated locally and can provide thermal energy with little thermal deformation by the laser, it can be easily used in a process requiring thin film separation regardless of the substrate because it does not affect outside the irradiated area. have.

Next, at least a portion of the second unit structure 120 from the first unit structure 110 is due to a difference in thermal expansion between the first unit structure 110 and the second unit structure 120 due to the thermal energy. The separation process is performed (S30).

According to an embodiment of the present invention, the laser is irradiated to at least a portion of the surface of the second unit structure 120 including the second layer having a relatively higher coefficient of thermal expansion than the first unit structure 110 including the first layer. Heat energy. The thermal energy of the laser irradiated to at least a portion of the surface of the second unit structure 120 may gradually transfer heat from the second unit structure 120 to the first unit structure 110.

The first unit structure 110 and the second unit structure 120 may have thermal expansion, respectively, by the heat energy transferred in this way, and the second unit structure including the second layer having a relatively large thermal expansion coefficient and receiving thermal energy ( Since 120) is relatively more thermally expanded than the first unit structure 110, a displacement difference occurs due to a difference in the degree to which each structure is stretched, and this displacement difference generates a shear stress to produce a first unit structure and a first unit structure. When shear stress is generated to an extent that exceeds the bonding force of the two unit structures, self-delamination may occur in which at least a portion of the second unit structure 120 is separated from the first unit structure 110. The embodiment according to the present invention may occur when the difference in thermal expansion coefficients of the first layer and the second layer included in each unit structure is about 2 to 4 times or more, and preferably 4 or more times the difference. It can be. When the difference in thermal expansion coefficient is lower than 2 times, the difference in displacement caused by thermal expansion of the first unit structure and the second unit structure may be reduced, and peeling may not occur. In addition, the layer may include an organic material or an inorganic material, and the organic material may have a higher coefficient of thermal expansion than the inorganic material. If viewed accurately, the organic material may have a range of 106 * 10 ^-6 / K to 198 * 10 ^-6 / K, and the inorganic material may have a range of about 5 * 10 ^-6 / K to 40 * 10 ^-6 / K. As the difference in thermal expansion coefficient increases, self-peeling by thermal energy can easily occur.

Referring to FIG. 2, in FIG. 2 (a), the first unit structure 110 and the second unit structure 120 are coupled, and laser is irradiated to at least a portion of the surface of the second unit structure 120 to heat energy Can be delivered. Referring to FIG. 2 (b), it can be seen that the first unit structure 110 and the second unit structure 120 are stretched by irradiating the laser and thermal energy is transferred, and the second layer having a relatively high thermal expansion coefficient value is shown. It can be seen that the second unit structure 120 includes thermal expansion of the second unit structure relatively more than the first unit structure 110, and shear stress is generated. Also, the second unit structure 120 is irradiated with a laser to heat transfer. By this, heat energy may be transferred to the first unit structure 110. In FIG. 2 (c), the shear stress generated by the difference in thermal expansion between the second unit structure 120 and the first unit structure 110 exceeds the bonding force between the first unit structure 110 and the second unit structure 120. It can be seen that the second unit structure 120 is self-peeled from the first unit structure 110.

The process of determining the peeling area by irradiating a laser along the edge of the area; It can contain.

According to an embodiment of the present invention, a laser is irradiated on at least a portion of a surface of the second unit structure 120 including a second layer having a relatively large coefficient of thermal expansion to irradiate a laser along an edge of a portion of the region before transferring thermal energy. By removing the constituent materials, the peeling region is first determined, and then a portion of the region where the peeling region is determined may be self-peeled by irradiating a laser to some regions to transfer thermal energy. This can be removed after determining the peeling area. Accordingly, in the process of transferring heat energy, the thermal energy by the laser can be transmitted only to the corresponding area, and the edge of the peeling area is removed so that thermal energy is not transmitted outside the peeling area. Can be.

The process of determining the exfoliation area or changing the accumulated energy of the laser used in the process of transferring the thermal energy may further include. The accumulated energy of the laser used in the process of determining the peeling area may be greater than the accumulated energy of the laser used in the process of transferring the thermal energy.

In the process of changing the accumulated energy of the laser, a process of changing the accumulated energy of the laser may be necessary because the laser used in the process of determining the peeling area or transferring heat energy may be the same laser. In an embodiment of the present invention, the laser used in the process of determining the peeling area or transferring heat energy may be the same laser, and the lasers used in the process of determining the peeling area or transferring heat energy may be different lasers. Can be If different lasers are used, the process of changing the accumulated energy of the above lasers may not be performed.

If the laser used in the process of determining the peeling area or transferring heat energy is the same laser, a process of changing the accumulated energy of the laser is required. This is because the accumulated energy of the laser used in the process of determining the peeling area and the accumulated energy of the laser used in the process of transferring heat energy must be different. Referring to Figure 3 (a), it is possible to irradiate the laser along the edge corresponding to the outer portion of at least a portion of the surface of the unit structure. As the laser irradiated along the edge is irradiated with high accumulated energy, an ablation process in which the constituent material of the irradiated region is removed from the unit structure may occur to determine the peeling region. High energy is required for the ablation process to occur because the material constituting the second unit structure 120 along the laser irradiated along the edge must be removed only due to the high energy. The laser used in the process of determining the peeling area must have a higher cumulative energy than the laser used in the process of transferring heat energy, as described above, by irradiating the laser along the edges of at least some areas of the laminated structure with high accumulated energy. This is because the ablation process must be performed on the part. As will be described later, according to an embodiment of the present invention, the laser used in the process of determining the exfoliation area in order to transmit the energy of the laser while minimizing the deformation of the periphery as described above may be a laser having a pulse width, among which a laser having femtosecond Can be. This is because, in a short time, high energy is irradiated instantaneously, and energy is transmitted only to the corresponding portion and may not affect the peripheral portion. By varying the accumulated energy of the laser in this way, since thermal deformation by the laser can hardly occur, it can be used in a process of peeling any layered structure regardless of the substrate. However, this is only an example and is not limited to the example.

On the other hand, the laser used in the process of transferring heat energy may have a lower cumulative energy than the laser used in the process of determining the peeling area. This is because at least a portion of the entire region must be irradiated with laser to transfer heat energy, so the accumulated energy may be lower than the laser irradiated in the process of determining the peeling region. This is because self-exfoliation can be performed by transferring heat energy, and unlike the process of determining the exfoliation area, high cumulative energy is not required because the ablation process is not required. This is because if only a certain amount of thermal energy can be applied on the laminate, thermal energy is transferred and peeling may occur.

The process of changing the accumulated energy includes: adjusting the energy density of the laser irradiated onto the surface of the stacked structure 100; Adjusting the overlap ratio of the laser beam irradiated on the surface of the laminated structure 100; It may include at least one of.

The accumulated energy of the laser can be changed by adjusting at least one of the density of the laser or the irradiation overlapping rate of the laser irradiated on the laser irradiation surface.

The density of the laser can be defined as (laser energy) / (the size of the laser beam). Since there is a threshold energy density at which the material irradiated with the laser can receive thermal stress, an appropriate level of thermal stress is applied. It is desirable to maintain energy density. The process of adjusting the laser density may be performed to control the density of the laser by performing at least one of a process of controlling the output of the laser or a process of controlling the size of the laser beam irradiated on the laser irradiation surface.

The process of controlling the size of the laser beam can be controlled by adjusting the size of the beam incident on the focus lens. For example, when the size of the beam incident on the focus lens is increased through the beam size adjusting unit, the size of the laser beam irradiated on the laser irradiation surface becomes smaller, so that the energy density can be increased. In the process of controlling the output of the laser, the accumulated energy can be controlled by adjusting the output energy of the laser from which the laser oscillates.

The process of adjusting the irradiation overlapping rate of the laser may include at least one of a process of controlling a moving speed according to a progress path of a laser irradiated to the laser irradiation surface or a process of adjusting the frequency of the laser irradiated to the irradiation surface. . Further, the laser used herein may be a pulsed laser, not a continuous laser.

The laser irradiated on the laser irradiation surface has an area of a predetermined size, and the area of the predetermined size can be irradiated on the laser irradiation surface. The process of controlling the moving speed of the laser according to the movement path irradiated to the irradiated surface, for example, the laser irradiated to the irradiated surface has an area of a certain size and is spatially moved by the optical unit between the two beams. Distance differences may occur. When the moving speed is increased, the distance between the two beams increases, and the area where the two beams having a certain area overlap is reduced, so that the accumulated energy can be lowered. In the process of adjusting the frequency of the laser irradiated on the irradiated surface, the interval of the laser irradiated on the irradiated surface is shortened, so that the laser can be irradiated to the irradiated surface multiple times, and thus the number of pulses of the laser applied to one point can be increased have. That is, as the number of times irradiated to the laser irradiation surface increases, the accumulated energy irradiated to one point can increase. By increasing the ratio of the overlapping rate, the ablation process by the laser progresses and energy is concentrated only in the area irradiated with the laser, so that only the edge area can be accurately removed without affecting the periphery.

On the other hand, according to an embodiment of the present invention, when the laser used in the process of determining the peeling area is irradiated along the edge of at least a portion of the laminated structure 100, the overlapping rate of irradiation is 95% to less than 100%. It can be adjusted to have a rate. The laser used in the process of determining the peeling area by having such a high overlapping rate can be irradiated with a relatively high cumulative energy. As a result, the energy of the laser is transmitted only to the edge of some areas, and damage to the peripheral area is caused by the energy of the laser. You may not receive. On the other hand, the laser used in the process of transferring thermal energy may have an overlap ratio of 0% to less than 95%. Sufficient heat source is transmitted even when irradiated to at least a part of the surface of the layered structure 100 with relatively low accumulated energy, so that the second unit structure 120 including the second layer is self-extracted from the first unit structure 110. It can be peeled. On the other hand, since the irradiated overlap ratio is inversely related to the production efficiency, the method of lowering the irradiated overlap ratio has an additional effect of shortening the processing time in addition to the effect of realizing low accumulated energy. It can be said that it is desirable to irradiate the laser by imposing. However, this is only an example according to the present invention and is not limited to the above values.

In an embodiment of the present invention, the laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation region is a combination of a pulse laser, or a laser used in the process of transferring the thermal energy. Is a pulse laser having a first pulse width, and the laser used in the process of determining the peeling region may use a combination of pulse lasers having a second pulse width having a shorter pulse width than a pulse laser having a first pulse width.

That is, it may be a pulse laser and a continuous laser combination, a pulse laser combination having different pulse widths or a pulse laser capable of adjusting the pulse width. As described above, according to an embodiment of the present invention, the lasers used in the process of transferring heat energy and determining the peeling area may be the same laser or different lasers. The laser used in the process of transferring thermal energy can be peeled even when the energy of the laser that is instantaneously irradiated is lower than the laser used in the process of determining the peeling area.

On the other hand, the laser used in the process of determining the exfoliation area can have an ablation process only when the energy of the laser that is irradiated to the irradiated area is instantaneously high. It may not be affected. In the case of a laser having the same power, if the pulse width is short and the heat transfer time is short, the same power must be oscillated in a short time, so the energy of the instantaneous laser is irradiated high and only a short time is irradiated. May not give. Because of this difference, the lasers used in the process of transferring heat energy and determining the peeling region may be the same laser or different lasers. For different lasers, the laser used in the process of transferring thermal energy that does not require instantaneous energy may be a continuous laser, and the laser used in the process of determining the exfoliation area where the instantaneous energy should be high may be a pulsed laser. The pulse width may be nanoseconds to femtoseconds, and preferably a femtosecond laser.

On the other hand, in order to use the same laser, it must be a laser capable of controlling the instantaneous energy. Therefore, the same laser may be a pulse laser. The laser used in the process of transferring the thermal energy that does not need to have high instantaneous energy may be a pulse laser having a first pulse width, and the laser used in the process of determining the peeling area where the instantaneous energy should be higher than the first pulse width. It may be a pulse laser having a second pulse width having a short pulse width. The pulse laser having the second pulse width may preferably be a pulse laser having femtoseconds. The use of the same laser is because it considers the simplicity of the process and the convenience of device configuration.

Meanwhile, all of the lasers used above may use IR, Green, or UV wavelengths depending on the type of wavelength, and the lasers according to embodiments of the present invention may have a femtosecond pulse width and may be a fiber laser having an IR wavelength. Fiber lasers have the advantage of being relatively inexpensive and small in size. However, this is only an embodiment of the present invention and is not limited to the above embodiment.

By peeling each unit structure constituting the stacked structure from the stacked structure in this way, it can be applied to the field of the stacked structure. The area where the defects are generated is irradiated with a laser to transfer thermal energy, so that the entire layer or only a corresponding portion can be selectively peeled off as a whole, or a portion to be peeled off as necessary during the process. In addition, since heat energy is transferred using a laser, only a portion thereof can be selectively removed from a layered structure in a desired region without thermal or physical influence. In addition, since the laser can be irradiated locally and can provide thermal energy with little thermal deformation by the laser, there may be an advantage that it is easy to use in a process requiring thin film separation regardless of the substrate.

4 is a flowchart illustrating a method of repairing an organic light emitting device according to an embodiment of the present invention. 5 is an image showing the state in which the organic light emitting device structure 600 is provided, and the thin film encapsulation layer 640 in the organic light emitting device structure 600 is shown. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings, but the same or corresponding components are assigned the same reference numbers regardless of the reference numerals, and overlapping descriptions thereof may be omitted or simply described. have.

Referring to Figure 4, the organic light emitting device repair method according to an embodiment of the present invention is provided on the organic light emitting laminate 620, the organic light emitting laminate 620, the cover layer 630 to improve the optical properties, And a process for providing an organic light emitting device structure 600 including a thin film encapsulation layer 640 formed on the cover layer 630 to prevent infiltration of moisture (S100). Checking the defect formed in the thin film encapsulation layer 640 (S200); A process of transmitting thermal energy by irradiating a laser to at least a portion of the surface of the organic light emitting device structure 600 including the identified defect (S300); And the cover layer 630 and the thin film encapsulation layer 640 have different coefficients of thermal expansion, and at least a part of the thin film encapsulation layer 640 is separated from the cover layer 630 by a difference in thermal expansion due to the thermal energy. (S400); may include.

An organic light emitting laminate 620, a cover layer 630 provided on the organic light emitting laminate 620 to improve optical properties, and a thin film encapsulation formed on the cover layer 630 to prevent the penetration of moisture The process of providing the organic light emitting device structure 600 including the layer 640 is performed (S100).

The organic light emitting device structure 600 includes an organic light emitting laminate 620, a cover layer 630, and a thin film encapsulation (TFE). The organic light emitting laminate 620 includes a carrier glass 601 ) To form a film layer 602 and include an organic light emitting device formed on the film layer 602. The cover layer 630 is provided on the organic light emitting device 603 and may be made of an inorganic film or an organic film having light transmittance while protecting the organic light emitting device 603 or an organic film containing inorganic particles. . The cover layer 630 according to the embodiment of the present invention may be formed of an inorganic film. The thin film encapsulation layer 640 is provided on the cover layer 630 and may serve to prevent air and moisture from penetrating the organic light emitting device 603. An organic light emitting device structure 600 (or unit cell) including such a configuration may be provided.

Next, a process of checking defects formed in the thin film encapsulation layer 640 is performed (S200).

Referring to FIG. 5, as the size of the carrier glass 601, which is the basis for manufacturing a panel including the organic light emitting device structure 600, has recently increased, a defective panel is generated due to particles and thermal deformation generated during the process. Probability increased. In particular, in the process of depositing a thin film encapsulation layer provided to prevent moisture intrusion when manufacturing the organic light emitting device structure 600, a defect formed by particles and thermal deformation, etc., may cause a burn-in phenomenon in the organic light emitting device or Destruction of organic substances can occur, and the flaking of the thin film encapsulation layer is caused by defects, and the excited thin film encapsulation layer is unintentionally torn off during the post-processing process, and particles or residues generated are normal organic light emitting devices. When the structure 600 is attached, the thin film encapsulation layer 640 of the normal organic light emitting device may be destroyed during the transfer process or the LLO process. Therefore, in order to solve this problem, the embodiment according to the present invention proceeds through a process of checking the defects formed in the thin film encapsulation layer 640 and removes at least a portion of the defects to be described later by irradiating a laser to transfer thermal energy. can do. The process of identifying the defect can be confirmed by checking the defect from the outside, or can be confirmed during the repair method.

Next, a process of transferring thermal energy by irradiating a laser to at least a portion of the surface of the organic light emitting device structure 600 including the identified defect is performed (S300).

According to an embodiment of the present invention, heat energy may be transferred by irradiating a laser on the surface of the thin film encapsulation layer 640 constituting the organic light emitting device structure 600. In this case, heat energy may be transferred by irradiating a laser on the thin film encapsulation layer 640 in at least a portion of the region including the defect. On the other hand, when irradiating a laser to at least a part of the surface of the layered structure 100, a laser may be irradiated to at least some areas by changing a moving path of a laser irradiated in a dot form to a specific area, or at least partially in a line beam form. The area may also be irradiated with a laser.

The cover layer 630 and the thin film encapsulation layer 640 have different coefficients of thermal expansion, and the process of separating at least a portion of the thin film encapsulation layer 640 from the cover layer 630 by a difference in thermal expansion due to the thermal energy Proceed (S400).

According to an embodiment of the present invention, thermal energy may be transferred by irradiating a laser to at least a portion of the surface of the thin film encapsulation layer 640 having a relatively higher coefficient of thermal expansion than the cover layer 630. The thermal energy of the laser irradiated to at least a portion of the surface of the thin film encapsulation layer 640 may gradually transfer heat from the thin film encapsulation layer 640 to the cover layer 630.

The thermal energy of the cover layer 630 and the thin film encapsulation layer 640 may occur due to the heat energy transferred in this way, and the thin film encapsulation layer 640 having a relatively high coefficient of thermal expansion is greater than the cover layer 630 having a relatively small coefficient of thermal expansion. Displacement difference is generated due to the difference in the degree of tension by being stretched relatively more, and this displacement difference generates a shear stress so that the shear stress exceeds the bonding force of the cover layer 630 and the thin film encapsulation layer 640. At least a part of the encapsulation layer 640 may be separated from the cover layer 630 by self-release. For example, the thermal expansion coefficient of the thin film encapsulation layer 640 is 0.00015 / K, the thermal expansion coefficient of the cover layer 630 is 0.000037 / K, and heat of 100K is transferred to the thin film encapsulation layer and the heat transferred to the cover layer 630 is When 50K, the thin film encapsulation layer 640 is stretched by about 1.5 mm, and the cover layer 630 is stretched by about 0.185 mm, resulting in a displacement difference of about 1.315 mm between the thin film encapsulation layer and the cover layer 630, and this displacement difference is sheared. When the stress is generated and the shear stress exceeds the bonding force between the thin film encapsulation layer 640 and the cover layer 630, the thin film encapsulation layer 640 self-exfoliates from the cover layer 630. The organic light emitting device structure 600 in which the thin film encapsulation layer 640 has been peeled off may not be removed for the purpose of reuse, and as described above, contamination of the intact organic light emitting layer structure may be prevented by removing the contaminants that may be generated in the post-process. It may have an effect of preventing. On the other hand, the organic light emitting device structure 600 from which the thin film encapsulation layer 640 has been removed is easily penetrated by moisture. Therefore, the thin film encapsulation layer 640 including defects is self-peeled, and the thin film encapsulation layer 640 is regenerated on the corresponding organic light emitting device structure 600 or a plurality of organic light emitting device structures 600 to be described later through a post process. Therefore, it can be reused as an organic light emitting device structure 600 that does not contain defects. Here, the regeneration method may be performed using PVD or CVD, which deposits the existing thin film encapsulation layer 640, or provides a pre-manufactured thin film encapsulation layer 640 on the organic light emitting device structure 600 from which defects are removed. And it can be deposited on the organic light emitting device by irradiating a laser or the like.

Referring to FIG. 5, a plurality of organic light emitting device structures 600 are provided, and each of the organic light emitting device structures 600 is provided by a separation unit 610 provided between the plurality of organic light emitting device structures 600. It can be provided independently.

A plurality of organic light emitting device structures 600 are provided on the carrier glass 601 (or mother glass), and a separation unit 610 provided on the carrier glass 601 and positioned between the plurality of organic light emitting device structures 600 ), Each organic light emitting device structure 600 may be formed independently. The separation unit 610 may have a configuration including at least one of oxide or nitride. If a plurality of organic light emitting device structures 600 are continuously positioned without being independent of each other, defects may occur in the thin film encapsulation layer 640 constituting one organic light emitting device, and thus, if moisture and air cannot be prevented, defects may occur. This is because a plurality of defects may occur due to the influence of water flowing into the plurality of adjacent organic light emitting device structures 600 through the light emitting device structure 600. Therefore, a plurality of organic light emitting device structures 600 may be independently provided. In addition, each of the organic light emitting device structures 600 may be used for a panel, and may be used as individual unit panels by cutting each. By providing the organic light-emitting device structures 600 independently of each other, the organic light-emitting device structures 600 having defects due to defects, etc., are not cut and used later, and are discarded and the rest are used as organic light-emitting panels or the thin film encapsulation layer is reused. It can be formed and reused as an organic light emitting panel. By removing and removing the defective part, or reforming the thin film encapsulation layer after peeling, it is possible to achieve yield improvement and cost reduction, and it can be used for large-sized panels. This can be.

The cover layer 630 is made of fluoride, and the lowermost layer of the thin film encapsulation layer 640 in which organic and inorganic films are alternately stacked may be made of an inorganic film.

The cover layer 630 according to an embodiment of the present invention may be made of lithium fluoride (LiF) having a relatively small coefficient of thermal expansion among fluorides. The coefficient of thermal expansion of lithium fluoride is 37 * 10 ^-6 / K. In addition, the cover layer 630 may be made of an inorganic material, and the inorganic material may have a coefficient of thermal expansion of about 5 * 10 ^-6 / K to 40 * 10 ^-6 / K.

The thin film encapsulation layer 640 may have a structure in which an organic film and an inorganic film are alternately stacked, and the organic film may be made of a monomer or a polymer thereof. The material may be made of a polyethylene-based resin, and may be an organic film containing at least one of a polyethylene glycol dimethacrylate monomer or a polyethylene glycol diacrylic monomer, and also pentaerythritol tetraacrylate or penta It may be an organic film containing at least one of erythritol tetramethacrylate. The inorganic film may include at least one of nitride, oxide, and oxynitride, and the inorganic film according to an embodiment of the present invention may be SiNx. The organic film forming the thin film encapsulation layer 640 is provided with a thickness of several µm to several tens of µm, and the inorganic film forms the thin film encapsulation layer 640 with a thickness of several tens of nm to hundreds of nm. The thin film encapsulation layer 640 may be provided as an organic layer and an inorganic layer in a single layer or multiple layers. On the other hand, when depositing the inorganic film constituting the thin film encapsulation layer 640, the probability of defects due to particles or the like may be high.

The thickness of the organic film and the inorganic film forming the thin film encapsulation layer 640 is about 10 ² times the difference. Since the inorganic film is relatively thin compared to the organic film, the inorganic film is irradiated with laser to the thin film encapsulation layer 640 to transfer thermal energy. As the organic film thermally expands, the film is thermally expanded along the organic film regardless of the thermal expansion coefficient of the inorganic film. Therefore, the thermal expansion coefficient of the thin film encapsulation layer is determined according to the value of the thermal expansion coefficient of the organic film, and the thermal expansion coefficient of the thin film encapsulation layer may have a thermal expansion coefficient of 106 * 10 ^-6 / K to 198 * 10 ^-6 / K. The difference in thermal expansion coefficient between the cover layer 630 and the thin film encapsulation layer according to an embodiment of the present invention may vary by about 2 to 4 times. If the difference in thermal expansion coefficient is lower than 2 times, the displacement difference caused by thermal expansion of the cover layer and the thin film encapsulation layer may be reduced, and peeling may not occur.

The lowermost layer of the thin film encapsulation layer 640 may be formed of an inorganic layer, and the inorganic layer SiNx and the inorganic layer LiF of the cover layer 630 may be combined by weak bonding force. In fluoride, fluorine can significantly degrade the binding force with other substances (or elements) due to strong chemical bonding between elements forming fluoride. That is, since the link is formed only between the elements forming the fluoride, and the link is not formed with the element newly provided on the cover layer, and the thin film encapsulation layer cannot be strongly bonded on the cover layer. When the heat energy is transmitted by irradiating a laser to at least a portion of the surface of the thin film encapsulation layer 640, the thin film encapsulation layer 640 and the cover layer 630 are expanded due to a difference in thermal expansion coefficient, and the thin film encapsulation layer having a relatively high thermal expansion coefficient ( When the thermal expansion of 640) is greater than that of the cover layer 630 and the shear stress due to the displacement difference occurs exceeds the weak bonding force of the thin film encapsulation layer 640 and the cover layer 630, self-delamination may occur. Meanwhile, since the bonding force between the organic layer and the inorganic layer of the thin film encapsulation layer 640 is greater than the bonding force between the thin film encapsulation layer 640 and the cover layer 630, the organic layer and the inorganic layer of the thin film encapsulation layer 640 are peeled off. First, the bonding layer and the thin film encapsulation layer 640 may be peeled off first.

The process of determining a peeling area by irradiating a laser along an edge of a predetermined area of the organic light emitting device structure 600 including the defect may be further included.

As described above, the embodiment according to the present invention may irradiate the laser along the edge corresponding to the outer portion of at least a portion of the surface of the thin film encapsulation layer 640. In this way, by irradiating the laser along the edge, an ablation process occurs, and the irradiated area is determined by removing the constituent materials constituting the thin film encapsulation layer 640 from the cover layer 630 by laser energy. Can be.

The process of determining the exfoliation area or changing the accumulated energy of the laser used in the process of transferring the thermal energy may further include. The accumulated energy of the laser used in the process of determining the peeling area may be greater than the accumulated energy of the laser used in the process of transferring the thermal energy.

As described above, in the process of changing the accumulated energy of the laser, since the laser used in the process of determining the peeling area or transferring the thermal energy may be the same laser, the process of changing the accumulated energy of the laser may be performed. If the laser used in the process of determining the peeling area or transferring heat energy is the same laser, a process of changing the accumulated energy of the laser is required. This is because the accumulated energy of the laser used in the process of determining the peeling area and the accumulated energy of the laser used in the process of transferring heat energy must be different. The laser used in the process of determining the peeling area must have a higher cumulative energy than the laser used in the process of transferring heat energy, and this part is ablation by irradiating the laser along the edges of at least some areas of the laminated structure with high accumulated energy. The process takes place and only the part forming the thin film encapsulation layer can be removed. Once the peeling area is determined, the edges can be removed. Accordingly, in the process of transferring heat energy, the thermal energy by the laser can be transmitted only to the corresponding area, and the edge of the peeling area is removed so that heat energy is not transmitted outside the peeling area. Can be.

On the other hand, the laser used in the process of transferring heat energy may have a lower cumulative energy than the laser used in the process of determining the peeling area. This is because at least a portion of the thin film encapsulation layer 640 may have a lower cumulative energy than the irradiated laser in the process of determining the peeling region, because the entire region must be irradiated with laser to transfer thermal energy. It is possible to self-peel by transferring heat energy to it.

The process of changing the accumulated energy includes: adjusting the energy density of the laser irradiated on the surface of the organic light emitting device structure 600; The process of adjusting the overlap ratio of the laser irradiated on the surface of the organic light emitting device structure 600; may include at least one of.

As described above, the cumulative energy of the laser can be changed by adjusting at least one of the density of the laser or the irradiation overlap ratio of the laser irradiated on the laser irradiation surface.

The density of the laser can be defined as (laser energy) / (the size of the laser beam). Since there is a threshold energy density at which the material irradiated with the laser can receive thermal stress, an appropriate level of thermal stress is applied. It is desirable to maintain energy density. The process of adjusting the laser density may be performed to control the density of the laser by performing at least one of a process of controlling the output of the laser or a process of controlling the size of the laser beam irradiated on the laser irradiation surface.

The process of adjusting the laser overlapping rate may include at least one of a process of controlling a moving speed of a laser irradiated onto the laser irradiation surface or a process of controlling the frequency of the laser irradiated on the irradiation surface. Further, the laser used herein may be a pulsed laser, not a continuous laser.

In an embodiment of the present invention, the laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation region is a combination of a pulse laser, or a laser used in the process of transferring the thermal energy. Is a pulse laser having a first pulse width, and the laser used in the process of determining the peeling region may use a combination of pulse lasers having a second pulse width having a shorter pulse width than a pulse laser having a first pulse width.

That is, it may be a pulse laser and a continuous laser combination, a pulse laser combination having different pulse widths or a pulse laser capable of adjusting the pulse width. As described above, according to an embodiment of the present invention, the lasers used in the process of transferring heat energy and determining the peeling area may be the same laser or different lasers. The laser used in the process of transferring thermal energy can be peeled even when the energy of the laser that is instantaneously irradiated is lower than the laser used in the process of determining the peeling area.

On the other hand, the laser used in the process of determining the exfoliation area may not be affected by the energy of the laser in areas other than the irradiated area only when the energy of the laser irradiated to the irradiated area is high immediately. Because of this difference, the lasers used in the process of transferring heat energy and determining the peeling area may be the same laser or different lasers. For different lasers, the laser used in the process of transferring thermal energy that does not require instantaneous energy may be a continuous laser, and the laser used in the process of determining the exfoliation area where the instantaneous energy should be high may be a pulsed laser. The pulse width may be nanoseconds to femtoseconds, and preferably a femtosecond laser.

On the other hand, the laser used in the process of determining the exfoliation area can have an ablation process only when the energy of the laser that is irradiated to the irradiated area is instantaneously high. It may not be affected. In the case of a laser having the same power, if the pulse width is short and the heat transfer time is short, the same power must be oscillated in a short time, so the energy of the instantaneous laser is irradiated high and only a short time is irradiated. May not give. Because of this difference, the lasers used in the process of transferring heat energy and determining the peeling area may be the same laser or different lasers. For different lasers, the laser used in the process of transferring thermal energy that does not require instantaneous energy may be a continuous laser, and the laser used in the process of determining the exfoliation area where the instantaneous energy should be high may be a pulsed laser. The pulse width may be nanoseconds to femtoseconds, and preferably a femtosecond laser.

On the other hand, in order to use the same laser, it must be a laser capable of controlling the instantaneous energy. Therefore, the same laser may be a pulse laser. The laser used in the process of transferring the thermal energy that does not need to have high instantaneous energy may be a pulse laser having a first pulse width, and the laser used in the process of determining the peeling area where the instantaneous energy should be higher than the first pulse width. It may be a pulse laser having a second pulse width having a short pulse width. The pulse laser having the second pulse width may preferably be a pulse laser having femtoseconds. The use of the same laser is because it considers the simplicity of the process and the convenience of device configuration.

Meanwhile, all of the lasers used above may use IR, Green, or UV wavelengths depending on the type of wavelength, and the lasers according to embodiments of the present invention may have a femtosecond pulse width and may be a fiber laser having an IR wavelength. Fiber lasers have the advantage of being relatively inexpensive and small in size. However, this is only an example, and is not limited to the example.

6 is a block diagram showing a laminate structure 100 peeling device according to an embodiment of the present invention. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings, but the same or corresponding components are assigned the same reference numbers regardless of the reference numerals, and overlapping descriptions thereof may be omitted or simply described. have.

Referring to FIG. 6, the apparatus for repairing a laminated structure 100 according to an embodiment of the present invention includes a first unit structure 110 including a first layer, and a second layer having a different thermal expansion coefficient from the first layer. Support unit 500 for supporting the laminated structure 100 including a second unit structure 120 having a; A mode selector 200 for selecting any one of a plurality of irradiation modes having different accumulated energy of the laser; A control unit 300 generating a laser control signal according to a mode selected by the mode selection unit 200; And a laser irradiation unit 400 for receiving the laser control signal and irradiating the surface of the stacked structure 100 with a laser of accumulated energy corresponding to the selected mode, wherein the plurality of irradiation modes include a peeling mode, When the peeling mode is selected in the mode selection unit 200, the laser irradiation unit 400 irradiates laser to at least a portion of the surface of the stacked structure 100 to transfer thermal energy, thereby causing the first unit structure 110 due to the thermal energy. ) And at least a part of the second unit structure 120 may be peeled off from the first unit structure 110 by a difference in thermal expansion between the second unit structure 120.

The support 500 may fix the stacked structure 100 so as not to move or move the fixed stacked structure 100 so that peeling may proceed. The first unit structure 110 constituting the stacked structure 100 may be composed of a single layer or multiple layers, and may include a first layer. The second unit structure 120 may also be composed of a single layer or multiple layers, of which the second layer has a different thermal expansion coefficient from the first layer. The stacked structure according to the embodiment of the present invention may be sufficiently thick in the thickness of the first layer and the second layer, and the first layer and the second layer may be provided adjacent to each other or may be provided in direct contact with each other, and The thermal expansion coefficient may be larger than the first layer. Therefore, the first unit structure and the second unit structure may be determined by the first layer and the second layer, respectively. In addition, the first unit structure 110 and the second unit structure 120 may be coupled with relatively weak bonding force.

The mode selector 200 may select any one of a plurality of irradiation modes in which the accumulated energy of the laser irradiated to the irradiation area is different. According to the selected mode, the accumulated energy of the laser may be changed by the accumulated energy fluctuation unit 310 of the controller 300 to be described later.

The controller 300 may generate a laser control signal according to the mode selected by the mode selector 200. The control unit 300 may include a control signal generation unit 320 and the laser control signal generated by the control signal generation unit 320 may be transmitted to the laser irradiation unit 400.

The laser irradiation unit 400 may receive a laser control signal and irradiate the laser to at least a portion of the surface of the stacked structure 100 with accumulated energy corresponding to the selected mode. According to an embodiment of the present invention, the surface of the second unit structure 120 including the second layer having a higher thermal expansion coefficient value among the first unit structure 110 and the second unit structure 120 constituting the laminated structure 100 The laser can be irradiated to at least some areas.

Meanwhile, the laser irradiation unit 400 includes a laser oscillation unit that oscillates a laser beam; It may include; an optical unit for changing the traveling path of the oscillated laser beam. The optical unit is controlled by the control unit 300, and the control signal generated by the control unit 300 may change the path of the laser irradiated to the irradiation area by changing the path of the oscillated laser beam. The optical unit is a galvano mirror that changes the traveling path of the irradiated laser, a line beam forming unit that converts the irradiated laser into a line beam, or a beam forming unit that transforms an area of the irradiated laser into a surface beam; It may include at least one of. The galvanometer mirror may include an X-axis galvanometer mirror that controls the X-axis and a Y-axis galvanometer mirror that controls the Y-axis, and at least part of the laminated structure 100 by controlling the X-axis or Y-axis galvanometer mirror of the irradiated laser. The entire area can be irradiated with a laser. The line beam forming unit may irradiate the laser beam when the laser beam is irradiated to at least a part of the stacked structure 100 by forming the laser beam into a line beam. In addition, the area of the laser beam irradiated to at least a part of the layered structure 100 by the beam forming unit may be irradiated by increasing the size by the beam forming unit such that the entire area can be irradiated.

The plurality of irradiation modes may include a peeling mode. As the peeling mode is selected, the control unit 300 generates a laser control signal and the laser irradiation unit 400 is a second unit including a second layer having a relatively large thermal expansion coefficient. Thermal energy may be transmitted by irradiating a laser to at least a portion of the surface of the structure 120. The heat energy radiated to the second unit structure may transfer heat to the first unit structure by heat transfer.

Thermal energy is transmitted to the second unit structure 120 including the second layer having a relatively large thermal expansion coefficient, so that thermal expansion occurs more than the first unit structure 110 including the first layer having the small thermal expansion coefficient. The second unit structure 120 having relatively more thermal expansion due to a difference in thermal expansion between the unit structure and the second unit structure may be peeled from the first unit structure 110.

The plurality of irradiation modes may further include a peeling region determination mode having an accumulated energy greater than the accumulated energy of the laser used in the peeling mode. When the laser irradiation unit 400 is selected as the separation region determination mode, an ablation process is performed by irradiating the laser along the edge of the region to form an edge of the second unit structure 120. Can be removed.

As described above, the plurality of irradiation modes may include a peeling mode, and the accumulated energy of the laser used in the peeling area determination mode may be greater than the accumulated energy of the laser used in the peeling mode. When the peeling region determination mode is selected by the mode selection unit 200, the control unit 300 may generate a laser control signal and transmit it to the laser irradiation unit 400, and the laser irradiation unit 400 receives the transmitted laser control signal and removes the peeling mode. It is possible to irradiate a laser with a relatively larger cumulative energy. The laser irradiation unit 400 selected as the peeling region determination mode and receiving the laser control signal may irradiate the laser along the edges of at least a portion of the laminated structure 100. This is a part of the laminated structure 100 that is irradiated with a laser having a relatively high accumulated energy by irradiating a laser having a relatively high accumulated energy to an outer portion of a certain area that needs to be peeled, so that the portion irradiated with the laser has little effect on the periphery of the irradiated area. The material can be removed and the peeling area can be determined.

The control unit 300 may include a cumulative energy fluctuation unit 310 that changes the accumulated energy of the laser according to the plurality of irradiation modes. The cumulative energy variation unit 310, an energy density changing unit 311 for changing the energy density of the laser irradiated to the laser irradiation surface; And an irradiation overlapping rate changing unit 312 for changing the irradiation overlapping rate of the laser irradiated onto the laser irradiation surface. It may include at least one of.

In order to change the accumulated energy according to the plurality of irradiation modes, the controller 300 may include a cumulative energy fluctuation unit 310 capable of changing the accumulated energy of the laser. As described above, in order to transfer thermal energy to at least a portion of the laminated structure 100 with one laser or to irradiate the laser with high accumulated energy at the edge of at least a portion of the laminated structure 100, a configuration capable of changing the accumulated energy may be essential. .

In order to change the accumulated energy of the laser, the accumulated energy can be changed by adjusting at least one of the energy density of the laser or the overlap ratio of the laser irradiated on the laser irradiation surface. The energy density changing unit 311 for changing the energy density of the laser includes an output adjusting unit for controlling the output of the laser; Or a beam size adjustment unit for controlling the size of the laser beam irradiated to the laser irradiation surface; It may include at least one of. The irradiation overlap ratio changing unit 312 for changing the irradiation overlap ratio of the laser irradiated onto the laser irradiation surface includes: a movement speed adjusting unit that controls a moving speed of the laser irradiated on the laser irradiation surface; Or a frequency control unit for adjusting the frequency of the laser irradiated to the irradiation surface; It may include at least one of. Further, the laser used herein may be a pulsed laser, not a continuous laser.

In the embodiment of the present invention, the laser used in the peeling mode is a continuous laser and the laser used in the peeling area determination mode is a pulse laser, or the laser used in the peeling mode has a pulse having a first pulse width. It is a laser, and the laser used in the peeling region determination mode may use a pulse laser combination having a second pulse width that is shorter than the pulse laser having the first pulse width.

As described above, according to an embodiment of the present invention, the lasers used in the peeling mode and the peeling area determination mode may be the same laser or different lasers. The laser used in the peeling mode can be peeled even when the energy of the laser that is irradiated instantaneously is lower than the laser used in the peeling area determination mode. On the other hand, the laser used in the determination mode of the exfoliation region may not be affected by the energy of the laser in areas other than the irradiated region only when the energy of the laser irradiated to the irradiated region is high immediately. Because of this difference, the lasers used in the peeling mode and the peeling area determination mode may be the same laser or different lasers. For different lasers, the laser used in the exfoliation mode where the instantaneous energy does not need to be high may be a continuous laser, the laser used in the exfoliation area determination mode where the instantaneous energy should be high may be a pulsed laser, and the pulse width is nanoseconds. It may be a femtosecond or preferably a femtosecond laser.

On the other hand, in order to use the same laser, it must be a laser that can control the instantaneous energy. Therefore, the same laser may be a pulse laser. The laser used in the peeling mode in which the instantaneous energy does not need to be high may be a pulse laser having a first pulse width, and the laser used in the peeling region determination mode in which the instantaneous energy should be high has a pulse width shorter than the first pulse width. It may be a pulse laser having a second pulse width. The pulse laser having the second pulse width may preferably be a pulse laser having femtoseconds. The use of the same laser is because it considers the simplicity of the process and the convenience of device configuration. By removing the edge of the laminated structure irradiated with the laser through the ablation process in the peeling area irradiation mode, when irradiating the laser in the peeling mode to the corresponding part, thermal energy is not transmitted outside the edge of the laminated structure, so only the desired part is selectively selected. It can be easy to peel.

Meanwhile, all of the lasers used above may use IR, Green, or UV wavelengths depending on the type of wavelength, and the lasers according to the embodiments of the present invention may have a femtosecond pulse width and may be fiber lasers having an IR wavelength. Fiber lasers have the advantage of being relatively inexpensive and small in size. However, this is only an example and is not limited to the example.

As described above, although specific embodiments have been described in the description of the present invention, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined not only by the claims described below, but also by the claims and equivalents.

100: laminated structure 110: first unit structure
120: second unit structure 200: mode selector
300: control unit 310: cumulative energy fluctuation unit
311: Energy density change unit 312: Irradiation overlap rate change unit
320: control signal generation unit 400: laser irradiation unit
500: support 600: organic light emitting device structure
601: carrier glass 602: film layer
603: organic light emitting element 610: separation unit
620: organic light emitting laminate 630: cover layer
640: thin film encapsulation layer L: laser beam

Claims (20)

Providing a stacked structure including a first unit structure including a first layer, and a second unit structure including a second layer having a different thermal expansion coefficient from the first layer;
A process of transmitting thermal energy by irradiating a laser to at least a part of the surface of the laminated structure; And
The process of separating at least a portion of the second unit structure from the first unit structure by the difference in thermal expansion of the first unit structure and the second unit structure due to the thermal energy; The method of peeling a laminated structure comprising a.
According to claim 1,
The process of determining a peeling area by irradiating a laser along the edge of the area; The method of peeling a laminated structure further comprising.
According to claim 2,
The process of determining the peeling area or changing the accumulated energy of the laser used in the process of transferring the heat energy; further comprising a method of peeling a laminated structure.
According to claim 2,
The method of peeling a laminated structure in which the accumulated energy of the laser used in the process of determining the peeling area is greater than the accumulated energy of the laser used in the process of transferring the thermal energy.
According to claim 3,
The process of changing the accumulated energy,
Adjusting the energy density of the laser irradiated on the surface of the laminated structure; And
Adjusting the overlap ratio of the laser beam irradiated on the surface of the laminated structure; A method of peeling a laminated structure comprising at least one of them.
According to claim 2,
The laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation area is a combination of a pulsed laser, or
The laser used in the process of transferring the thermal energy is a pulse laser having a first pulse width, and the laser used in the process of determining the exfoliation region has a second pulse width having a shorter pulse width than a pulse laser having a first pulse width. A method for peeling a laminated structure, which is a combination of a pulsed laser.
A process of providing an organic light emitting device structure including an organic light emitting laminate, a cover layer provided on the organic light emitting laminate to improve optical properties, and a thin film encapsulation layer formed on the cover layer to prevent the penetration of moisture. ;
Identifying a defect formed in the thin film encapsulation layer;
A process of transmitting thermal energy by irradiating a laser to at least a part of the surface of the organic light emitting device structure including the identified defect; And
The cover layer and the thin film encapsulation layer has a different coefficient of thermal expansion, the process of separating at least a portion of the thin film encapsulation layer from the cover layer due to the difference in thermal expansion due to the thermal energy.
The method of claim 7,
A plurality of the organic light emitting device structure is provided,
A method of repairing an organic light emitting element provided by independently separating each of the organic light emitting element structures by a separator provided between a plurality of the organic light emitting element structures.
The method of claim 7,
The cover layer is made of fluoride,
A method of repairing an organic light emitting device, wherein the lowermost layer of the thin film encapsulation layer in which the organic film and the inorganic film are alternately stacked is made of an inorganic film.
The method of claim 7,
And determining a peeling area by irradiating a laser along an edge of a predetermined area of the organic light emitting device structure including the defect.
The method of claim 10,
And determining the exfoliation area or changing the accumulated energy of the laser used in the process of transferring the thermal energy.
The method of claim 10,
A method of repairing an organic light emitting device, wherein the accumulated energy of the laser used in the process of determining the peeling area is greater than the accumulated energy of the laser used in the process of transferring the thermal energy.
The method of claim 11,
The process of changing the accumulated energy,
Adjusting the energy density of the laser irradiated on the surface of the organic light emitting device structure;
A method of repairing an organic light emitting device including at least one of a process of adjusting an overlap ratio of a laser beam irradiated on the surface of the organic light emitting device structure.
The method of claim 10,
The laser used in the process of transferring the thermal energy is a continuous laser and the laser used in the process of determining the exfoliation area is a combination of pulsed lasers, or
The laser used in the process of transferring the thermal energy is a pulse laser having a first pulse width, and the laser used in the process of determining the exfoliation region has a second pulse width having a shorter pulse width than a pulse laser having a first pulse width. A method of repairing an organic light emitting device which is a combination of a pulsed laser.
A support for supporting a stacked structure including a first unit structure including a first layer, and a second unit structure including a second layer having a different thermal expansion coefficient from the first layer;
A mode selector which selects any one of a plurality of irradiation modes having different accumulated energy of the laser;
A control unit generating a laser control signal according to a mode selected by the mode selection unit; And
It includes; a laser irradiation unit for receiving the laser control signal and irradiating the surface of the laminated structure with a laser of accumulated energy corresponding to the selected mode;
The plurality of irradiation modes include a peeling mode,
When the peeling mode is selected in the mode selection unit, the laser irradiation unit transmits thermal energy by irradiating a laser to at least a portion of the surface of the layered structure, and the thermal expansion difference between the first unit structure and the second unit structure due to the thermal energy is varied. A layered structure peeling apparatus in which at least a part of the second unit structure is peeled from the first unit structure.
The method of claim 15,
The plurality of irradiation modes,
A layered structure peeling apparatus further comprising a peeling area determination mode having a cumulative energy greater than the accumulated energy of the laser used in the peeling mode.
The method of claim 16,
The laser irradiation unit,
When the separation region determination mode is selected, the laser beam is irradiated along the edge of the region, so that the edge of the second unit structure is removed.
The method of claim 15,
The control unit,
A laminated structure peeling device comprising a; cumulative energy fluctuation unit for changing the accumulated energy of the laser according to the plurality of irradiation modes.
The method of claim 18,
The cumulative energy fluctuation unit,
An energy density changing unit for changing the energy density of the laser irradiated onto the laser irradiation surface; And
An irradiated overlap ratio changing unit for changing the irradiated overlap ratio of the laser irradiated onto the laser irradiation surface; Lamination structure peeling device comprising at least any one of.
The method of claim 16,
The laser used in the peeling mode is a continuous laser and the laser used in the peeling area determination mode is a combination of pulsed lasers, or
The laser used in the peeling mode is a pulse laser having a first pulse width, and the laser used in the peeling area determination mode is a pulse laser having a second pulse width shorter than the pulse laser having a first pulse width. Combination lamination structure peeling device.

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