KR20200044311A - Light-emitting device module and light-emitting device package having the same - Google Patents

Abstract

The present invention relates to a light emitting element module having a new structure. The light emitting element module comprises: a light emitting element; a wavelength conversion layer disposed on an upper surface and a plurality of side surfaces of the light emitting element; and a diffusion unit disposed on the wavelength conversion layer and including a scattered particle. A weight ratio of a resin to a fluorescent body is 1:1.1 to 1:11.3. A thickness ratio of the diffusion unit to the wavelength conversion layer is 1:4 to 1:10.

Description

Light emitting device module and light emitting device package having the same {Light-emitting device module and light-emitting device package having the same}

The embodiment relates to a light emitting device module and a light emitting device package having the same.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as light emitting devices, light receiving devices, and various diodes.

Particularly, light emitting devices such as light emitting diodes or laser diodes using semiconductor group 3 or 2-6 compound semiconductor materials of semiconductors are red, green, and green due to the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be implemented. The light-emitting element can also implement a white light with high efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving device such as a photodetector or a solar cell is manufactured using a semiconductor group 3 or 2-6 compound semiconductor material of semiconductor, the development of device material absorbs light in various wavelength ranges to generate a photocurrent. By doing so, light in various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy adjustment of device materials, and thus can be easily used for power control or microwave circuits or communication modules.

Accordingly, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp, or an incandescent light bulb that replaces a cold cathode tube (CCFL) constituting the backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device can be expanded to high-frequency application circuits, other power control devices, and communication modules.

These semiconductor devices are increasingly required to be thin. In this way, when a plurality of thin semiconductor elements are arranged to be packaged, the semiconductor elements are spaced apart from each other. Therefore, even if the semiconductor elements are spaced apart from each other, in order to ensure uniform light, the directivity of the semiconductor elements must be extended. If the directivity angle of the semiconductor device is narrow, a hot spot phenomenon occurs in which a light on the semiconductor device is bright when viewed from above and the light between the semiconductor devices is relatively dark.

The embodiment provides a light emitting device module having a new structure and a light emitting device package having the same.

The embodiment provides a light emitting device module and a light emitting device package having the same, which can secure a uniform light by extending a directivity angle.

The light emitting device module according to the embodiment, the light emitting device; A wavelength conversion layer disposed on an upper surface and a plurality of side surfaces of the light emitting device and including a resin and a phosphor; And a diffusion unit disposed on the wavelength conversion layer and including scattering particles. The weight ratio of the resin and the phosphor may be 1: 1.1 to 1: 1.3, and the thickness ratio of the diffusion portion and the wavelength conversion layer may be 1: 4 to 1:10.

The light emitting device package according to the embodiment, the substrate; And the light emitting device module.

According to an embodiment, the diffusion portion is disposed on the upper surface of the wavelength conversion layer, and is not disposed on the side surface of the wavelength conversion layer. Accordingly, since the light converted by the wavelength in the upper region of the wavelength conversion layer is diffused by the diffusion unit, the light directing angle can be improved.

According to an embodiment, by optimizing the scattering particles included in the diffusion portion, the thickness of the wavelength conversion layer and the second thickness of the diffusion portion, it is possible to improve the directivity angle and meet the SAE standard.

According to the embodiment, the second diffusion unit is disposed between the wavelength conversion layer and the first diffusion unit and includes a pattern and a recess, so that the light emitted from the light emitting device is diffused twice, further improving the light directing angle. I can do it.

According to an embodiment, a plurality of openings of the third diffusions arranged in the first diffusions are arranged to be inclined toward the edge from the center of the wavelength conversion layer, so that the light entering the openings proceeds along the direction inclined along the openings As it is emitted to the outside, the light directing angle can be significantly improved.

According to the embodiment, the light directing angle can be improved by having the concave surfaces provided on the lower surface and the upper surface of the first diffusion portion and having the concave surfaces having a predetermined curvature.

1 is a perspective view showing a light emitting device module according to a first embodiment.
2 is a cross-sectional view taken along line AA of the light emitting device module shown in FIG. 1.
3 shows a viewing angle according to a comparative example and an example.
4 shows the progress of light in Comparative Examples and Examples.
Fig. 5 shows color coordinates in Examples.
FIG. 6 is a view showing the light emitting device shown in FIG. 1.
7 is a plan view showing a light emitting device module according to a second embodiment.
8 is a cross-sectional view taken along line BB of the light emitting device module shown in FIG. 8.
9 is a perspective view illustrating the wavelength conversion layer of FIG. 1.
10 is a perspective view showing a light emitting device module according to a third embodiment.
11 is a cross-sectional view taken along line CC of the light emitting device module shown in FIG. 10.
12 is a cross-sectional view showing a light emitting device module according to a fourth embodiment.
13 is a plan view showing a light emitting device package according to an embodiment.
14 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 13.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to some embodiments described, but may be implemented in various different forms, and within the scope of the technical spirit of the present invention, one or more of its components between embodiments may be selectively selected. It can be used by bonding and substitution. In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless clearly defined and specifically described, can be generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as a meaning, and terms that are commonly used, such as predefined terms, may be interpreted by considering the contextual meaning of the related technology. In addition, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention. In the present specification, a singular form may also include a plural form unless specifically stated in the phrase, and may be combined into A, B, and C when described as “at least one (or more than one) of B and / or C”. It may include one or more of all combinations. In addition, in describing the components of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the component from other components, and the term is not limited to the nature, order, or order of the component. And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also to the component It may also include a case of 'connected', 'coupled' or 'connected' due to another component between the other components. Further, when described as being formed or disposed in the "top (top) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is not only when the two components are in direct contact with each other, but also one It also includes a case in which another component described above is formed or disposed between two components. In addition, when expressed as "up (up) or down (down)", it may include the meaning of the downward direction as well as the upward direction based on one component.

The semiconductor device may include various electronic devices such as a light emitting device and a light receiving device, and both the light emitting device and the light receiving device may include a light emitting structure including at least a first semiconductor layer, an active layer, and a second semiconductor layer. The light emitting device emits light by recombination of a first carrier, that is, an electron and a second carrier, that is, a hole, and the wavelength of the light is determined by a bandgap energy inherent to the material. Therefore, the emitted light may vary depending on the composition of the material.

(First Example)

1 is a perspective view showing a light emitting device module according to a first embodiment, and FIG. 2 is a cross-sectional view taken along line A-A of the light emitting device module shown in FIG. 1.

1 and 2, the light emitting device module 400 according to the first embodiment may include a light emitting device 100, a wavelength conversion layer 110 and a diffusion unit 120.

For example, the light emitting device 100 may be provided with electrode pads (17a, 17b in FIG. 6) on the lower surface. The light emitting device 100 may have a rectangular shape when viewed from above, but is not limited thereto.

The light emitting device module 400 according to the first embodiment may be manufactured in a chip scale package (CSP) method.

 The light emitting device 100 may include a light emitting structure that generates and emits light. The structure of the light emitting device 100 according to the first embodiment will be described further below.

The wavelength conversion layer 110 according to the first embodiment may be disposed around the light emitting device 100. The wavelength conversion layer 110 may be disposed on the side surface of the light emitting device 100. The wavelength conversion layer 110 may be disposed on four sides surrounding the light emitting device 100. The wavelength conversion layer 110 may be disposed on the upper surface of the light emitting device 100. The wavelength conversion layer 110 may be surrounded to cover all four sides and an upper surface of the light emitting device 100.

For example, the wavelength conversion layer 110 may be disposed in direct contact with the upper surface of the light emitting device 100. The lower surface of the wavelength conversion layer 110 may be disposed in direct contact with the upper surface of the light emitting device 100. In addition, the wavelength conversion layer 110 may include a kind of sidewall disposed on the side surface of the light emitting device 100. Four sidewalls of the light emitting device 100 may be surrounded by four sidewalls of the wavelength conversion layer 110. The sidewall of the wavelength conversion layer 110 may be disposed in direct contact with the side surface of the light emitting device 100. The inner surface of the sidewall of the wavelength conversion layer 110 may be disposed in direct contact with the side surface of the light emitting device 100.

 The wavelength conversion layer 110 may wavelength-convert and emit light incident from the light emitting device 100. For example, the wavelength conversion layer 110 may receive light in the blue band from the light emitting device 100 and emit light in the yellow band. The wavelength conversion layer 110 may provide white light by light in the blue band and light in the yellow band. The wavelength conversion layer 110 may emit white light in four lateral directions and an upper direction, as shown in FIGS. 1 and 2.

 The wavelength conversion layer 110 may emit white light from four sidewalls in an outward direction. The sidewall of the wavelength conversion layer 110 may be provided with a first thickness T1. The wavelength conversion layer 110 may include an upper region disposed on four side walls. The upper region of the wavelength conversion layer 110 may be provided with a second thickness T2.

For example, the first thickness T1 and the second thickness T2 may be thicknesses in a long axis direction or a short axis direction. According to an embodiment, the first thickness T1 and the second thickness T2 may be provided in the same manner. Further, according to another embodiment, the first thickness T1 and the second thickness T2 may be provided differently.

Each of the first thickness T1 and the second thickness T2 may be, for example, 150 μm to 200 μm. If less than 150㎛, the phosphor is not sufficiently provided, the wavelength conversion efficiency may be reduced. In the case of more than 200 μm, the thickness of the light emitting device module is increased, which may be counter to the trend that thinness is required.

 For example, the second thickness T2 of the upper region of the wavelength conversion layer 110 may be provided in a thickness of several micrometers to several hundred micrometers. As the second thickness T2 of the upper region of the wavelength conversion layer 110 is thicker, the wavelength conversion efficiency may be increased. In addition, as the second thickness T2 of the upper region of the wavelength conversion layer 110 is thicker, as the side thickness of the upper region of the wavelength conversion layer 110 increases, the light flux diffused to the side of the wavelength conversion layer 110 increases. By increasing, the emission efficiency of light emitted in the lateral direction of the light emitting device 100 may also be increased. As an example, the second thickness T2 of the wavelength conversion layer 110 may be provided from 10 micrometers to 1000 micrometers. When the second thickness T2 of the wavelength conversion layer 110 is smaller than 10 micrometers, the wavelength conversion efficiency may be reduced, and when it is larger than 1000 micrometers, the light emitting device module 400 may be small. It is difficult to manufacture.

In addition, the first thickness T1 of the sidewall of the wavelength conversion layer 110 may be provided in a thickness of several micrometers to several hundred micrometers. The wavelength conversion efficiency may be increased as the first thickness T1 of the sidewall of the wavelength conversion layer 110 is thicker.

For example, the first thickness T1 of the wavelength conversion layer 110 may be provided from 10 micrometers to 1000 micrometers. When the first thickness T1 of the wavelength conversion layer 110 is smaller than 10 micrometers, the wavelength conversion efficiency may be reduced, and when it is larger than 1000 micrometers, the light emitting device module 400 may be small. It is difficult to manufacture.

Further, the second thickness T2 of the wavelength conversion layer 110 may be provided in a range of 10 micrometers to 1000 micrometers. When the second thickness T2 of the wavelength conversion layer 110 is smaller than 10 micrometers, the wavelength conversion efficiency may be reduced, and when it is larger than 1000 micrometers, the light emitting device module 400 may be small. It is difficult to manufacture.

For example, the second thickness T2 may be provided larger than the first thickness T1. In other words, the distance from the upper surface of the light emitting device 100 to the upper surface of the wavelength conversion layer 110 is greater than the distance from the side surface of the light emitting device 100 to the outer surface of the wavelength conversion layer 110. Can be provided. By providing the second thickness T2 larger than the first thickness T1, the wavelength conversion efficiency for light extracted in the upper direction from the upper surface of the light emitting device 100 can be improved.

Further, according to the embodiment, the ratio between the second thickness T2 and the first thickness T1 or the ratio between the second thickness T2 and the third thickness T3 is in the upper region of the wavelength conversion layer 110. It may be determined according to the wavelength conversion efficiency of the wavelength conversion efficiency in the sidewall region of the wavelength conversion layer 110.

For example, by providing the second thickness T2 equal to the first thickness T1, the wavelength-converted light in the upper region of the wavelength conversion layer 110 and the wavelength-converted light in the sidewall of the wavelength conversion layer 110 By similarity, it is possible to implement light corresponding to the same color coordinate in both regions.

The wavelength conversion layer 110 according to the first embodiment may include a resin and a phosphor. The wavelength conversion layer 110 may include a polymer resin in which phosphors are dispersed. In addition to the phosphor, quantum dots may be used.

The weight ratio of the resin and the phosphor may be 1: 1.1 to 1: 1.3. If less than 1: 1.1, the content of the phosphor is small, and the wavelength conversion efficiency may be lowered. In the case of more than 1: 1.3, the content of the phosphor is excessively higher than necessary, and not only the waste of the phosphor material is invited, but the wavelength conversion efficiency may be reduced by too many phosphors. For example, when the resin has a weight of 10%, the phosphor may have a weight of 110% to 130%. In this way, since the phosphor is contained more than the resin, the wavelength conversion efficiency of light can be improved.

As an example, the resin may include at least one selected from the group comprising light-transmitting epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. For example, the phosphor may include any one of YAG-based, TAG-based, Silicate-based, Sulfide-based, or Nitride-based fluorescent materials.

According to an embodiment, the YAG and TAG-based fluorescent materials are selected from (Y, Tb, Lu, Sc, La, Gd, Sm) ₃ (Al, Ga, In, Si, Fe) ₅ (O, S) ₁₂ : Ce It can be, Silicate-based fluorescent material (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl) can be selected and used. In addition, the sulfide-based fluorescent material can be selected from (Ca, Sr) S: Eu, (Sr, Ca, Ba) (Al, Ga) ₂ S ₄ : Eu, and the Nitride-based phosphor is (Sr, Ca, Si, Al , O) N: Eu (eg, CaAlSiN ₄ : Eu β-SiAlON: Eu) or Ca-α SiAlON: Eu (Ca _x , M _y ) (Si, Al) ₁₂ (O, N) ₁₆ . At this time, M is at least one of Eu, Tb, Yb, or Er, and may be selected from phosphor components satisfying 0.05 <(x + y) <0.3, 0.02 <x <0.27 and 0.03 <y <0.3. The red phosphor may be a nitride-based phosphor containing N (eg, CaAlSiN ₃ : Eu) or a KSF (K ₂ SiF ₆ ) phosphor.

 According to the light emitting device module 400 according to the first embodiment, it includes a wavelength conversion layer 110 disposed on the upper surface of the light emitting device 100. The wavelength conversion layer 110 includes an upper region disposed at a second thickness T2 on the upper surface of the light emitting device 100. According to an embodiment, the light emitted from the upper surface of the light emitting device 100 by the upper region of the wavelength conversion layer 110 in the upper direction can be effectively wavelength converted by the wavelength conversion layer 110.

The wavelength conversion layer 110 according to the first embodiment may be disposed in contact with an upper surface and a side surface of the light emitting device 100. The wavelength conversion layer 110 may sufficiently secure a contact area between light provided from an upper surface and a side surface of the light emitting device 100. Accordingly, the wavelength conversion layer 110 receives a sufficient amount of light emitted from the light emitting device 100 and is able to provide wavelength conversion.

The diffusion unit 120 according to the first embodiment may be disposed on the upper surface of the wavelength conversion layer 110. For example, the diffusion unit 120 may be disposed in direct contact with the upper surface of the wavelength conversion layer 110. The diffusion unit 120 may be disposed spaced apart from the upper surface of the light emitting device 100. The diffusion unit 120 may be disposed only on the upper surface of the wavelength conversion layer 110.

The diffusion unit 120 may diffuse light incident from the wavelength conversion layer 110.

The diffusion unit 120 may include resin and scattering particles. The diffusion unit 120 and the wavelength conversion layer 110 may include the same resin, but are not limited thereto. As the resin, for example, the resin may include at least one selected from the group consisting of light-transmitting epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. The scattering particles are formed of micro-sized silicon, alumina, titanium dioxide (TiO2), silicon dioxide (SiO2), zirconia (ZrO2), barium sulfate (barium bulfate), zinc oxide (ZnO), polymeta It may be formed of at least one material selected from the group consisting of methyl methacrylate (Poly (methylmethacrylate), PMMA) and benzoguanamine-based polymers. Alternatively, the scattering agent is composed of nano-sized silica, alumina, titanium dioxide (TiO2), silicon dioxide (SiO2), zirconia (ZrO2), barium sulfate and zinc oxide (ZnO). It may be formed of at least one material selected from.

The diffusion unit 120 may have a third thickness T3. The third thickness T3 of the diffusion unit 120 may be different from the first thickness T1 or the second thickness T2 of the wavelength conversion layer 110. For example, it may be 20 μm to 40 μm. If it is less than 20 μm, scattering particles are not sufficiently provided, and thus diffusion efficiency may decrease. If it is more than 40㎛, the thickness of the light emitting device module is increased, which may be counter to the trend that thinness is required.

The thickness ratio of the diffusion unit 120 and the wavelength conversion layer 110 may be 1: 4 to 1:10. In the case of less than 1: 4, the thickness of the diffusion unit 120 becomes too thin, so diffusion of light is not easy. If it exceeds 1:10, the thickness of the wavelength conversion layer 110 is too large, and the thickness of the light emitting device module 400 may be increased.

Meanwhile, the refractive index of the wavelength conversion layer 110 may be greater than that of the diffusion unit 120. Therefore, an emission angle of light may be greater than an incident angle of light at the interface between the wavelength conversion layer 110 and the diffusion unit 120. This feature can be applied equally to all the following embodiments.

Hereinafter, the viewing angles and color coordinates according to Comparative Examples and Examples will be described with reference to FIGS. 3 to 5.

In the comparative example, it was tested without the diffusion unit 120 according to the embodiment. Test conditions of the diffusion unit 120 according to the implementation are shown in Table 1 below.

Case Particulate particles Luminous flux (Lm) Weight added (compared to silicone weight) Thickness (T3) (㎛) Directing angle (°) One

TiO2 21.2 20 30 154 2 15.7 30 30 160 3 11.2 40 30 162 4 19.2 30 20 155 5 10.6 30 40 162

As shown in FIG. 3 and shown in Table 1, both the first case (Case1) to the case (Case5) of the embodiment have a larger directivity than in the comparative example. FIG. 4A shows the progress of light in the comparative example , Figure 4b shows the progress of the light in the embodiment. In both the comparative and the examples, a plurality of light emitting device modules were mounted and tested on a substrate.

4A and 4B, it can be seen that the light distribution is more uniform in the embodiment than in the comparative example. That is, in the embodiment, hot spots having poor bright spots may be minimized by uniform light distribution.

Meanwhile, the color coordinate test was performed under the conditions shown in Table 2, and the color coordinate as shown in FIG. 5 was implemented as a result of the test.

Case Phosphor weight (%) Thickness (T1) (㎛) Luminous flux (Lm) Cx Cy One 120 105 48.24 0.6483 0.3454 2 120 175 36.05 0.6723 0.3236 3 150 175 18.24 0.6809 0.3149 4 135 175 24.28 0.6762 0.3173

As shown in FIG. 5 tested under the conditions shown in Table 2, the phosphor has a weight of 110% to 130% by weight of silicon, and each of the first thickness T1 and the second thickness T2 is, for example, 150 It can be seen that when the µm to 200 µm, the SAE standard specification is satisfied. SAE standard specifications are steel, non-ferrous metal materials, non-metallic materials, fuels, lubricants, mechanical components, parts, devices, test methods, repair methods, and definitions of terms and conditions for automobiles and parts ( This is a standard established by the American Society of Automotive Engineers.

According to an embodiment, the diffusion unit 120 is disposed on the upper surface of the wavelength conversion layer 110 and is not disposed on the side surface of the wavelength conversion layer 110. Accordingly, since the wavelength-converted light in the upper region of the wavelength conversion layer 110 is spread through the diffusion unit 120, the light directing angle may be improved.

According to the light emitting device module according to the embodiment, the wavelength conversion efficiency of light emitted from the light emitting device 100 is improved by the wavelength conversion layer 110 disposed between the upper surface of the light emitting device 100 and the diffusion unit 120 It becomes possible.

According to the light emitting device module 400 according to the embodiment, as the lower surface of the diffusion unit 120 is spaced apart from the upper surface of the light emitting device 100, the amount of light extracted in the upper direction of the light emitting device 100 is also In addition to being increased, the amount of light extracted from the sidewall of the wavelength conversion layer 110 in an outward direction can also be increased.

According to an embodiment, by optimizing the scattering particles included in the diffusion unit 120, the second thickness (T2) of the wavelength conversion layer 110 and the second thickness (T3) of the diffusion unit 120, the directivity angle is improved And meet SAE standards.

An example of a light emitting device applied to the light emitting device module according to the first embodiment of the present invention will be described with reference to FIG. 6. FIG. 6 is a view showing the light emitting device shown in FIG. 1.

Referring to FIG. 6, the light emitting device 100 according to the first embodiment may include a substrate 11, a light emitting structure 10, a first electrode 16a and a second electrode 16b.

The light emitting structure 10 according to the first embodiment may include a first conductivity type semiconductor layer 12, an active layer 13 and a second conductivity type semiconductor layer 14. The light emitting structure 10 according to the first embodiment may include an active layer 13 disposed between the first conductivity type semiconductor layer 12 and the second conductivity type semiconductor layer 14.

For example, according to the light emitting structure 10 according to the first embodiment, the first conductivity type semiconductor layer 12 is provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 14 is a p-type semiconductor layer. Can be provided. Further, according to another example of the light emitting structure 10 according to the first embodiment, the first conductivity type semiconductor layer 12 is provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 14 is an n-type semiconductor It can also be provided in layers.

 The light-emitting structure 10 may have a wavelength band of light emitted according to a material constituting the active layer 13. In addition, the selection of materials constituting the first conductive type semiconductor layer 12 and the second conductive type semiconductor layer 14 may be changed according to the materials constituting the active layer 13. The light emitting structure 10 may be provided as a compound semiconductor. The light emitting structure 10 may be provided as, for example, a group 2-6 group or a group 3-5 compound semiconductor. For example, the light emitting structure 10 may be provided by including at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). You can.

 The active layer 13 is a recombination of a first carrier (eg, electron) provided from the first conductivity type semiconductor layer 12 and a second carrier (eg, hole) provided from the second conductivity type semiconductor layer 14. ) May generate light in a wavelength band corresponding to. The active layer 13 may be provided in any one or more of a single well structure, a multi well structure, a quantum dot structure, or a quantum wire structure. The active layer 13 may be provided as a compound semiconductor. The active layer 13 may be provided as, for example, a group 2-6 group or a group 3-5 compound semiconductor.

When light in the ultraviolet wavelength band, blue wavelength band, or green wavelength band is generated in the active layer 13, the active layer 13 is, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤ It can be provided as a semiconductor material having a composition formula of 1, 0≤x + y≤1). The active layer 13 may be selected from, for example, a group including InAlGaN, InAlN, InGaN, AlGaN, and GaN. When the active layer 13 is provided in a multi-well structure, the active layer 13 may be provided by stacking a plurality of barrier layers and a plurality of well layers.

The first conductivity type semiconductor layer 12 may be provided as a compound semiconductor. The first conductive semiconductor layer 12 may be provided as, for example, a group 2-6 compound semiconductor or a group 3-5 compound semiconductor. For example, when light in the ultraviolet wavelength band, blue wavelength band, or green wavelength band is generated in the active layer 13, the first conductivity type semiconductor layer 12 may be formed of In _x Al _y Ga _1-xy N (0≤x≤1 , 0≤y≤1, 0≤x + y≤1) may be provided as a semiconductor material having a composition formula. The first conductivity-type semiconductor layer 12 may be selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN, for example, n-type Si, Ge, Sn, Se, Te, etc. The dopant can be doped.

The second conductivity type semiconductor layer 14 may be provided as a compound semiconductor. The second conductivity type semiconductor layer 14 may be provided as, for example, a group 2-6 compound semiconductor or a group 3-5 compound semiconductor. For example, when light in the ultraviolet wavelength band, blue wavelength band, or green wavelength band is generated in the active layer 13, the second conductivity type semiconductor layer 14 may be, for example, In _x Al _y Ga _1-xy N (0≤x It can be provided as a semiconductor material having a composition formula of ≤1, 0≤y≤1, 0≤x + y≤1). The second conductivity-type semiconductor layer 14 may be selected from a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN, for example, p-type Mg, Zn, Ca, Sr, Ba, etc. The dopant can be doped.

The light emitting device 100 according to the first embodiment, as shown in FIG. 6, the first electrode 16a and the second conductive type semiconductor layer 14 electrically connected to the first conductive type semiconductor layer 12 It may include a second electrode (16b) electrically connected to. In addition, the light emitting device 100 according to the first embodiment includes a first electrode pad 17a electrically connected to the first electrode 16a and a second electrode pad 17b electrically connected to the second electrode 16b. It can contain. A filling layer 20 may be disposed between the first electrode pad 17a and the second electrode pad 17b. The filling layer 20 may be provided as an insulating material, for example. The filling layer 20 may support the first electrode pad 17a and the second electrode pad 17b.

According to the light emitting device 100 according to the first embodiment, as shown in FIG. 6, the light emitting structure 10 may be disposed under the substrate 11. The substrate 11 may include a conductive substrate or an insulating substrate. For example, the substrate 11 may be a material suitable for the growth of the light emitting structure 10 or a carrier wafer. The substrate 11 may be formed of a material selected from the group including sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

 The first electrode 16a may be electrically connected to the first conductive type semiconductor layer 12 through a through hole passing through the active layer 13 and the second conductive type semiconductor layer 14. A first insulating layer 15a may be disposed on side surfaces of the first conductive type semiconductor layer 12, the active layer 13, and the second conductive type semiconductor layer 14 exposed by the through hole. The first insulating layer 15a may prevent the active layer 13 and the second conductivity-type semiconductor layer 14 from being connected to the first electrode 16a and the first electrode pad 16a.

 The first electrode 16a and the second electrode 16b are Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ti, Cr, Cu, and optional combinations thereof. It may include at least one of the groups.

 A second insulating layer 15b may be further disposed between the second electrode 16b and the first electrode pad 17a. Also, the second insulating layer 15b may be disposed between the second electrode 16b and the second electrode pad 17b. The second insulating layer 15b may be provided as a material that performs both an insulating function and a reflective function. For example, the second insulating layer 15b may include a DBR layer.

In the light emitting device 100 according to the first embodiment, as shown in FIG. 6, the substrate 11 is disposed on the upper side, and the first electrode pad 17a and the second electrode pad 17b are disposed on the lower side. Can be deployed. For example, the light emitting device 100 may be electrically connected to a circuit board disposed under the flip chip bonding method. In addition, as the second insulating layer 15b disposed on the first electrode pad 17a and the second electrode pad 17b is provided as a DBR layer having excellent reflection characteristics, light generated in the active layer 10 is a light emitting structure. It can be effectively released in the lateral direction and the upper direction of (10).

(Second example)

7 is a plan view showing a light emitting device module according to a second embodiment, and FIG. 8 is a cross-sectional view taken along line B-B of the light emitting device module shown in FIG. 8.

7 and 8, the light emitting device module 400A according to the second embodiment includes a light emitting device 100, a wavelength conversion layer 110, and a diffusion unit 120 (hereinafter referred to as a first diffusion unit). You can. In addition, the light emitting device module 400A according to the second embodiment may further include a second diffusion unit 130. Since the second embodiment is the same as the first embodiment except for the second diffusion unit 130, components that are omitted in the following description can be easily understood from the first embodiment.

The light emitting device module 400A according to the second embodiment may include a second diffusion unit 130 disposed between the wavelength conversion layer 110 and the first diffusion unit 120. The second diffusion unit 130 may diffuse the light incident from the light emitting device 100 and provide it to the first diffusion unit 120. In addition, the first diffusion unit 120 may diffuse light incident from the second diffusion unit 130 and emit it to the outside.

According to the second embodiment, not only the first diffusion unit 120 but also the second diffusion unit 130 is added, and the light emitted from the light emitting device 100 is diffused twice, thereby further improving the light directing angle. have.

The second diffusion unit 130 may include a pattern 112 and a recess 122. The recess 122 may have a shape corresponding to the pattern 112. The patterns 112 may be provided in a plurality of spaced apart from each other, but may be adjacent to or in contact with each other. The recess 122 may be provided in a plurality of spaced apart from each other, but may be adjacent to or in contact with each other.

The pattern 112 may be arranged radially. For example, the upper surface of the wavelength conversion layer 110 may be divided into a plurality of regions along the edge from the center. For example, the upper surface of the wavelength conversion layer 110 may be divided into a first region, a second region surrounding the first region, and a third region surrounding the second region. In this case, the first region may have, for example, a circular shape, the second region may be disposed adjacent to the first region and the outside, and the third region may be disposed adjacent to the outside of the second region. For example, a plurality of patterns 112 may be disposed in the first region of the upper surface of the wavelength conversion layer 110. A plurality of patterns 112 may be disposed in a second region of the upper surface of the wavelength conversion layer 110. That is, the plurality of patterns 112 disposed in the second region may be disposed along the outer circumference of the first region. A plurality of patterns 112 may be disposed in a third region of the upper surface of the wavelength conversion layer 110. That is, the plurality of patterns 112 disposed in the third region may be disposed along the outer circumference of the second region.

The plurality of patterns 112 may be arranged in a line in a radial direction, but is not limited thereto.

For example, as the distance from the center of the upper surface of the wavelength conversion layer 110 to the edge may be wider, the distance between the patterns 112 may be wider, but is not limited thereto. Due to the arrangement structure of the pattern 112, more light is refracted at the center of the upper surface of the wavelength conversion layer 110 to be emitted in the lateral direction rather than the upper direction, and light is emitted at the edge of the upper surface of the wavelength conversion layer 110. It may be less refracted and released upward. Accordingly, high luminance is distributed around the central axis of the light emitting device 100 to uniformly emit light and the light directing angle can be improved.

As illustrated in FIG. 9, the pattern 112 may be disposed on the wavelength conversion layer 110. The pattern 112 may be integrally formed with the wavelength conversion layer 110, but may be formed separately. The pattern 112 may extend or protrude from the upper surface of the wavelength conversion layer 110 toward the upper direction.

The pattern 112 may have a cylindrical shape. The diameter of the lower side of the pattern 112 may be larger than the diameter of the upper side of the pattern 112. Accordingly, the side surface of the pattern 112 may have an inclined surface 112a. The upper side of the pattern 112 may have a plane, but is not limited thereto. The pattern 112 may have a conical shape.

For example, the side surfaces of the pattern 112 may have at least three or more planes, and these planes may contact each other. In this case, the upper side of the pattern 112 may have a flat surface or a vertex.

The height of the pattern 112 may be 500 nm or more. In the case of 50 nm or less, the formation of the pattern 112 may not be easy. The height of the pattern 112 may be less than, equal to, or greater than the thickness of the first diffusion unit 120.

For example, when the height of the pattern 112 is equal to the thickness of the first diffusion unit 120, the pattern 112 may penetrate the first diffusion unit 120 to expose the top surface of the pattern 112 to the outside. . In this case, the first diffusion unit 120 may have an opening 143 corresponding to the pattern 112. The inside of the opening 143 and the side surface of the pattern 112 may be in contact, but this is not restrictive.

For example, when the height of the pattern 112 is greater than the thickness of the first diffusion unit 120, the pattern 112 penetrates through the first diffusion unit 120 so that the upper surface of the pattern 112 is the first diffusion unit 120 ) May protrude upward from the top surface.

The lower surface of the pattern 112 may be circular when viewed from below, but is not limited thereto.

The radius of the lower surface of the pattern 112 may be the same as the height of the pattern 112, but is not limited thereto. With this structure, the light directing angle can be further improved.

The recess 122 may be disposed on the lower surface of the first diffusion unit 120. The recess 122 may have a shape corresponding to the shape of the pattern 112, and may have a concave shape that has entered the interior of the first diffusion unit 120. The pattern 112 may be in contact with the recess 122, but may be spaced apart from the recess 122 and a medium such as air may be filled therebetween.

On the other hand, looking at the manufacturing method of the second diffusion unit 130, first of all, the first diffusion unit 120 surrounding the light emitting device 100 and including a plurality of patterns 112 may be provided. Subsequently, the resin containing the scattering particles is sprayed onto the first diffusion unit 120 and the plurality of patterns 112 by using a molding process, and then the plurality of patterns 112 and the patterns 112 by the curing process. The second diffusion portion 130 composed of the corresponding recess 122 may be manufactured.

According to an embodiment, the second diffusion unit 130 disposed between the wavelength conversion layer 110 and the first diffusion unit 120 and including the pattern 112 and the recess 122 is provided, thereby providing a light emitting device ( By diffusing the light emitted from 100) twice, the light directing angle can be further improved.

(Example 3)

10 is a perspective view showing a light emitting device module according to a third embodiment, and FIG. 11 is a cross-sectional view taken along line C-C of the light emitting device module shown in FIG. 10.

10 and 11, the light emitting device module 400B according to the third embodiment may further include a third diffusion unit 140. The third diffusion unit 140 may include a plurality of openings 143. The third embodiment may be applied to the second embodiment. In the third embodiment, the same reference numerals are assigned to the same components as the first embodiment or the second embodiment, and detailed description is omitted.

The third diffusion unit 140 may be disposed on the first diffusion unit 120. The plurality of openings 143 may be arranged in a line along a specific direction, but is not limited thereto. The diameter of the plurality of openings 143 may be the same, but is not limited thereto. Here, the opening 143 may mean that the lower surface and the upper surface of the first diffusion unit 120 are opened.

As another example, a plurality of recesses 122 may be disposed on the lower surface and / or the upper surface of the first diffusion unit 120 instead of the opening 143. As another example, the plurality of openings 143 and the plurality of recesses 122 may be disposed in the first diffusion unit 120.

For example, when a plurality of recesses are disposed on the lower surface of the first diffusion unit 120, for example, a space region filled with air may be provided between the upper surface of the wavelength conversion layer 110 and the inner surface of the recess 122. have.

Meanwhile, the opening 143 may be inclined toward the edge from the center of the wavelength conversion layer 110. The angle of inclination of the opening 143 may become larger as it goes from the center to the edge of the wavelength conversion layer 110, but is not limited thereto.

The upper surface of the wavelength conversion layer 110 may have a region exposed to the outside by a plurality of openings 143.

Light emitted from the light emitting device 100 and passed through the wavelength conversion layer 110 enters the opening 143 through the exposed area, and passes through the wavelength conversion layer 110 along the inside of the opening 143, for example. So it can be released to the outside.

As another example, a total reflection layer made of a material capable of total reflection may be disposed in the opening 143. Accordingly, light may be totally reflected within the opening 143 and then emitted to the outside.

According to an embodiment, the plurality of openings 143 of the third diffusion unit 140 are arranged to be inclined toward the edge from the center of the wavelength conversion layer 110, so that the light entering the opening 143 is opened (143). Along the direction inclined along), it is emitted to the outside and the light directing angle can be significantly improved.

In particular, when the third diffusion unit 140 of the third embodiment is combined with the first diffusion unit 120 of the first embodiment or the first and second diffusion units 120 and 130 of the second embodiment, it is further improved. The angle of intention can be secured.

(Example 4)

12 is a cross-sectional view showing a light emitting device module according to a fourth embodiment.

Referring to FIG. 12, in the light emitting device module 400C according to the fourth embodiment, the first diffusion unit 120 includes a first concave surface that enters from the lower surface toward the upper direction and a second concave surface which enters from the upper surface toward the lower direction. Can have cotton. In this structure, when the thickness of the edge of the first diffusion unit 120 is T3 and the thickness of the center of the first diffusion unit 120 is T4, the thickness of the edge of the first diffusion unit 120 (T3) ) May be greater than the thickness T4 of the center of the first diffusion unit 120.

The fourth embodiment can be applied to the second and / or third embodiment. In the fourth embodiment, the same reference numerals are assigned to the same components as the first embodiment, the second embodiment, or the third embodiment, and detailed description is omitted.

Each of the first concave surface and the second concave surface may have a predetermined curvature. For example, the curvature of the second concave surface may be greater than that of the first concave surface.

According to the embodiment, the light directing angle can be improved by having the concave surfaces provided on each of the lower surface and the upper surface of the first diffusion unit 120 so that these concave surfaces have a predetermined curvature.

13 is a plan view showing a light emitting device package according to an embodiment, and FIG. 14 is a cross-sectional view taken along line D-D of the light emitting device package shown in FIG. 13.

13 and 14, the light emitting device package according to the embodiment may include a substrate 300 and a plurality of light emitting device modules 400 mounted on the substrate 300.

Although the light emitting device module 400 according to the first embodiment is shown in the drawing, the second to fourth light emitting device modules 400A, 400B, and 400C may be applied to the light emitting device package according to the embodiment.

Meanwhile, the above-described light emitting device package may be used, for example, as a light source of a video display device or a light source of a lighting device.

The light source of the video display device may include, for example, a backlight unit. The backlight unit may be classified into an edge type and a direct type according to the arrangement form of the light emitting device package. In the edge type, the light emitting device package may be disposed on the side surface of the light guide plate. In the direct type, the light emitting device package may be disposed under the display panel.

The light source of the lighting device may include a luminaire, a bulb type lamp, and a light source of the mobile terminal.

Features, structures, and effects described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been mainly described above, these are merely examples and do not limit the embodiments, and those skilled in the art to which the embodiments belong may not be exemplified in the above without departing from the essential characteristics of the embodiments. You will see that it is possible to modify and apply branches. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of embodiments set forth in the appended claims.

100: light emitting element
110: wavelength conversion layer
112: pattern
112a: Slope
120, 130, 140: diffuser
122: Recess
143: opening 300 substrate
400, 400A, 400B, 400C: Light emitting element module

Claims (9)

Light emitting elements;
A wavelength conversion layer disposed on an upper surface and a plurality of side surfaces of the light emitting device and including a resin and a phosphor; And
A first diffusion unit disposed on the wavelength conversion layer and including scattering particles;
Including,
The weight ratio of the resin and the phosphor is 1: 1.1 to 1: 1.3,
A light emitting device module having a thickness ratio of the first diffusion portion and the wavelength conversion layer is 1: 4 to 1:10. According to claim 1,
A second diffusion portion disposed between the wavelength conversion layer and the first diffusion portion;
A light emitting device module further comprising a. According to claim 2,
The second diffusion unit,
A pattern disposed on an upper surface of the wavelength conversion layer; And
And a recess corresponding to the pattern and disposed on a lower surface of the first diffusion unit. According to claim 3,
The pattern is a light emitting device module disposed radially. According to claim 3,
The pattern has a cylindrical shape,
The side surface of the pattern has an inclined surface,
The diameter of the lower surface of the pattern is larger than the diameter of the upper surface of the pattern of the light emitting device module According to claim 3,
The radius of the lower surface of the pattern and the height of the pattern are the same light emitting device module. According to claim 3,
The size of the pattern is a light emitting device module larger than the center edge. According to claim 3,
The number of patterns is a light emitting device module having more edges than the center. Board;
A light emitting device package comprising the light emitting device module according to claim 1 to claim 8.

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