KR20200040029A - Organic lighting emitting display - Google Patents

Abstract

According to the present invention, an organic lighting emitting display comprises: a substrate having a display area with a plurality of pixels and a non-display area around the display area; a thin film transistor disposed in the display area and an organic light emitting element electrically connected to the thin film transistor; and an alignment structure provided to adjust a bonding position between the substrate and a polarizing plate disposed in the non-display area; and a protective layer covering the alignment structure, wherein the alignment structure has a laminated shape in which an inorganic insulating layer on a substrate, an organic insulating layer directly contacting the inorganic insulating layer, and a metal layer on the organic insulating layer are stacked. Accordingly, the organic light emitting display device may prevent damage to the alignment structure as the metal layer of the alignment structure is not lost.

Description

Organic light emitting display device {ORGANIC LIGHTING EMITTING DISPLAY}

The present specification relates to an organic light emitting display device, and more particularly, to an organic light emitting display device having improved reliability.

Recently, as interest in information display has increased and the demand to use a portable information medium has increased, it has been applied to a lightweight flat panel display (FPD) that replaces the existing display device, the cathode ray tube (CRT). Korea's research and commercialization are focused.

In the field of flat panel display devices, a liquid crystal display device (LCD), which is light and low in power consumption, has been the most popular display device so far, but the liquid crystal display device is not a light emitting device, but a light receiving device and is a brightness and contrast ratio. ratio) and viewing angles, so development of new display devices capable of overcoming these disadvantages has been actively developed.

Since one of the new display devices, the organic light emitting display device is self-emission type, it has a better viewing angle and contrast ratio than a liquid crystal display device. In addition, since a backlight is not required, light weight and thinness are possible, and it is advantageous in terms of power consumption. In addition, there is an advantage that DC low voltage driving is possible and the response speed is fast.

The organic light emitting display device displays an image by arranging sub-pixels having an organic light-emitting diode in a matrix form and selectively controlling the sub-pixels with a data voltage and a scan voltage.

In this case, the organic light emitting display device is divided into a passive matrix method or an active matrix method using a thin film transistor (TFT) as a switching element. Among them, the active matrix method selects a sub-pixel by selectively turning on a TFT, which is an active element, and maintains the light emission of the sub-pixel at a voltage maintained in the storage capacitor.

The organic light emitting display device has an alignment structure for various uses.

For example, when forming a thin film transistor on a substrate, when aligning a photo mask and an alignment structure for aligning the substrate to the correct position, when a substrate equipped with a thin film transistor and a polarizing plate opposed thereto are bonded, the two substrates are brought to the correct position. Alignment structure for alignment, or alignment structure for attaching a printed circuit board equipped with a driver to the pad portion of the display panel to the correct position, and when using P-MOS TFT, apply reverse bias to the TFT to prevent weak points that may occur in reliability. There are alignment structures used for T-aging, which is a pre-removal task, or AMI inspection, which inspects Auto Prove equipment.

Typically, the alignment structure is provided in a non-display area where an image is not displayed, and the alignment structure and the structure to be attached are aligned and attached through a camera at the top or bottom of the substrate.

In a general organic light emitting display device, a polarizing plate is applied to an upper surface of a display panel to prevent visibility from being deteriorated by reflection of external light. When the polarizing plate is not attached to the display panel at the correct position, a phenomenon in which color sense is abnormal in a side viewing angle occurs. In addition, the process may not be possible due to problems such as fastening jigs and / or seating of the process tray.

The inventors of the present invention have studied the attachment of a polarizing plate to improve the display quality of the organic light emitting display device, and the fact that the polarizing plate and the display panel are difficult to accurately align when the alignment structure in the non-display area of the organic light emitting display device is damaged. Was recognized.

Accordingly, this specification is intended to provide an organic light emitting display device employing a more improved alignment structure. The problems in this specification are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The organic light emitting diode display according to an exemplary embodiment of the present invention includes a substrate having a display area having a plurality of pixels and a non-display area around the display area, a thin film transistor disposed in the display area, and organic light emission electrically connected to the thin film transistor A device, an alignment structure provided for adjusting the bonding position of the substrate disposed in the non-display area and the polarizing plate, and a protective layer covering the alignment structure, the alignment structure comprising an inorganic insulating layer on the substrate, an organic contacting directly on the inorganic insulating layer The insulating layer and the metal layer on the organic insulating layer have a stacked shape.

Specific details of other embodiments are included in the detailed description and drawings.

Embodiments of the present invention can improve the problem that the alignment structure used when attaching the polarizing plate is damaged. In addition, the display device according to an embodiment of the present invention is provided with an adhesive reinforcement layer under the metal layer of the alignment structure, thereby preventing the loss of the metal layer due to etchant lowering during patterning of the metal layer and improving the phenomenon that the alignment structure is damaged to improve the polarizing plate attachment process. Can increase the accuracy of.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a block diagram schematically illustrating an organic light emitting diode display according to an exemplary embodiment of the present invention.
FIG. 2 is an equivalent circuit diagram schematically showing a pixel area of a display panel of the organic light emitting diode display illustrated in FIG. 1.
3 is a schematic plan view of an organic light emitting diode display according to an exemplary embodiment of the present invention.
4 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment of the present invention.
5 is a schematic cross-sectional view of an alignment structure according to an embodiment of the present invention.
6 is a schematic cross-sectional view of an alignment structure according to another embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the ordinary knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for describing the embodiments of the present invention are exemplary and the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present invention, when it is determined that detailed descriptions of related known technologies may unnecessarily obscure the subject matter of the present invention, detailed descriptions thereof will be omitted. When 'include', 'have', 'consist of', etc. mentioned in this specification are used, other parts may be added unless '~ man' is used. When a component is expressed as a singular number, the plural number is included unless otherwise specified.

In analyzing the components, it is interpreted as including the error range even if there is no explicit description.

In the case of the description of the positional relationship, for example, when the positional relationship of two parts is described as '~ top', '~ upper', '~ bottom', '~ side', etc., 'right' Alternatively, one or more other parts may be located between the two parts unless 'direct' is used.

An element or layer being referred to as being "on" another element or layer includes all instances of other layers or other elements immediately above or in between.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, the first component mentioned below may be the second component within the technical spirit of the present invention.

The same reference numerals refer to the same components throughout the specification.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component.

Each of the features of the various embodiments of the present invention may be partially or totally combined with or combined with each other, and technically various interlocking and driving may be possible as those skilled in the art can fully understand, and each of the embodiments may be independently implemented with respect to each other. It can also be implemented together in an association relationship.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, an organic light emitting display device according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1 and 2.

1 is a block diagram schematically showing an organic light emitting display device according to an embodiment of the present invention, and FIG. 2 is an equivalent circuit diagram schematically showing a pixel area of a display panel of the organic light emitting display device shown in FIG. 1. .

Referring to FIG. 1, an organic light emitting display device according to an exemplary embodiment of the present invention includes a display panel 10, a data driver disposed on one side of the display panel 10, a gate driver LS and SR, and a timing controller TC. It includes.

The timing controller TC is supplied with a data signal RGB along with a driving signal including a data enable signal, a vertical synchronization signal, a horizontal synchronization signal, and a clock signal from an external host system HS.

The timing controller TC includes a gate timing control signal GDC for controlling the operation timing of the gate drivers LS and SR and a data timing control signal DDC for controlling the operation timing of the data driver based on the driving signal. Output.

The timing controller TC may be formed in the form of an IC on the flexible printed circuit board 30.

The data driver samples and latches the data signal RGB supplied from the timing controller TC in response to the data timing control signal DDC supplied from the timing controller TC, converts it into a gamma reference voltage, and then converts the data voltage. Is supplied to the data lines DL of the display panel 10 so as to be synchronized with the gate pulse (or scan pulse).

The data driving IC (DIC) of the data driving unit may be connected to the data lines DL of the display panel 10 by a chip on film (COF) process or a tape automated bonding (TAB) process. In the embodiment of FIG. 2, one side of the data driving IC (DIC) is connected to one end of the source printed circuit board (DPCB), and the other side is mounted on a chip-on film (COF) attached to one end of the display panel 10. It shows an example.

The gate driver outputs a gate signal while shifting the level of the gate voltage in response to the gate timing control signal GDC supplied from the timing controller TC. The embodiment of FIG. 2 exemplifies a case in which the gate driver is a GIP (Gate In Panel) type, a level shifter LS mounted on the flexible printed circuit board 30 and a substrate SUB of the display panel 10 ), And a shift register SR formed thereon.

The level shifter LS receives signals such as a start pulse ST, gate shift clocks GLCK, and a flicker signal FLK from the timing controller TC, and also a gate high voltage VGH and a gate low voltage. (VGL) and other driving voltages are supplied.

The level shifter LS is a shift clock signal in which the start pulse ST input from the timing controller TC and each of the gate shift clocks GLCK are level shifted to the gate high voltage VGH and the gate low voltage VGL. Outputs CLK.

Accordingly, each of the start pulse VST and the shift clock signals CLK output from the level shifter LS swings between the gate high voltage VGH and the gate low voltage VGL. The level shifter LS may reduce the flicker by lowering the gate high voltage according to the flicker signal FLK to lower the kickback voltage Δ of the liquid crystal cell.

2, a start pulse VST, clock signals CLK1 to CLKn, a gate low voltage VGL, and a gate high voltage VGH are input to the shift register SR. The shift register SR includes a plurality of stages (not shown) that are connected to each other. The clock signals CLK1 to n are n (n is a natural number of 2 or more) phase clock signals whose phases are sequentially delayed. The clock signals CLK1 to CLKn are supplied to each stage through clock signal supply lines (not shown).

The shift register SR swings between the gate high voltage VGH and the gate low voltage VGL by shifting the start pulse VST input from the level shifter LS according to the gate shift clock signals CLK1 to CLKn. The gate pulses to be shifted are sequentially shifted. The gate pulse output from the shift register SR is sequentially supplied to the gate lines GL.

The display panel 10 includes an active area AA and a bezel area BA. The active area AA is an area in which an input image is displayed and an area in which a pixel array is disposed. The bezel area BA is an area in which an input image is not displayed, and is a region in which shift registers of the gate driving circuit, various signal wirings, and power supply lines are disposed.

The pixel array of the display panel 10 includes pixels defined by the intersection of the data lines DL and the gate lines GL.

Each of the pixels includes an organic light emitting diode, which is a self-light emitting device.

Referring to FIG. 1, a plurality of data lines DL and a plurality of gate lines GL are intersected on the display panel 10, and pixels are arranged in a matrix form for each of the intersecting areas. Each of the pixels is an organic light emitting diode (OLED), a driving thin film transistor (Thin Film Transistor, hereinafter referred to as TFT) (DT) that controls the amount of current flowing through the organic light emitting diode (OLED), and the gate-source of the driving TFT (DT) And a programming unit SC for setting the voltage.

The programming unit SC may include at least one switch TFT and at least one storage capacitor.

The switch TFT is turned on in response to the scan signal from the gate line GL, thereby applying the data voltage from the data line DL to one electrode of the storage capacitor.

The driving TFT (DT) controls the amount of current supplied to the organic light emitting diode (OLED) according to the magnitude of the voltage charged in the storage capacitor to adjust the amount of light emitted from the organic light emitting diode (OLED). The amount of light emitted from the organic light emitting diode OLE is proportional to the amount of current supplied from the driving TFT DT.

Each pixel is connected to a high-potential power supply voltage source (EVDD) and a low-potential power supply voltage source (EVSS), and receives a high-potential power supply voltage and a low-potential power supply voltage from a power generator (not shown), respectively.

The TFTs constituting the pixel may be implemented in p-type or n-type. Further, the semiconductor layer of the TFTs constituting the pixel may include amorphous silicon, polysilicon, or oxide. The organic light emitting diode OLE includes an anode electrode ANO, a cathode electrode CAT, and an organic layer (not shown) interposed between the anode electrode ANO and the cathode electrode CAT. The anode electrode ANO is connected to the driving TFT DT. The organic layer includes an emission layer (EML), a hole injection layer (HIL) and a hole transport layer (HTL), an electron transport layer (ETL), and An electron injection layer (EIL) may be disposed.

Next, with reference to FIGS. 3 and 4, the structure of the organic light emitting display device according to the exemplary embodiment of the present invention will be described in more detail.

3 is a plan view illustrating a partial area of a display panel of an organic light emitting diode display according to an exemplary embodiment of the present invention, and FIG. 4 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 3, which shows a plane of a display panel of a general organic light emitting diode display, an image display area DA and a non-display area NDA not displaying an image along a border of the display area DA are defined. do.

In this case, the non-display area NDA is also defined as a bezel area, and the non-display area NDA is provided with a light-blocking layer for blocking light, so that the organic light emitting display device is the same as the display area DA when it is not driven. It is provided to show the color

Typically, the alignment structure is provided in the non-display area NDA in which an image is not displayed, and the alignment structure and a driver to be attached are aligned and attached through a camera at the top or bottom of the substrate.

4 is a cross-sectional view of the organic light emitting display device. In the case of the organic light emitting display device 200, the thin film transistor 220, the organic light emitting device 240, and various functional layers are positioned on the base layer 201 in the display area DA.

The base layer 201 supports various components of the organic light emitting diode display 200. The base layer 201 may be formed of a transparent insulating material, for example, an insulating material such as glass or plastic. The substrate (array substrate) may also be referred to as a concept including an element and a functional layer formed on the base layer 201, for example, a switching TFT, a driving TFT, an organic light emitting element, and a protective film.

A buffer layer 202 can be located on the base layer 201. The buffer layer is a functional layer for protecting a thin film transistor (TFT) from impurities such as alkali ions flowing out of the base layer 201 or lower layers. The buffer layer 202 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof.

A thin film transistor is placed on the buffer layer 202 or the base layer 201. In the thin film transistor, a semiconductor layer 221, a gate insulating layer 225, a gate electrode 222, an interlayer dielectric layer 226, a source electrode 228, and a drain electrode 224 are sequentially stacked. Can be The semiconductor layer 221 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with impurities. In addition, the semiconductor layer 221 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Furthermore, the semiconductor layer 221 may be made of oxide.

The gate electrode 222 may be formed of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof. And the like.

The gate insulating layer 225 and the interlayer insulating layer 226 may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material. Selective removal of the gate insulating layer 225 and the interlayer insulating layer 226 may form contact holes through which source and drain regions are exposed.

The source electrode 228 and the drain electrode 224 are formed on the gate insulating layer 225 or the interlayer insulating layer 226 in the form of a single layer or multiple layers as an electrode material. If necessary, a passivation layer made of an inorganic insulating material may cover the source and drain electrodes 218.

A planarization layer 227 may be located on the thin film transistor. The planarization layer 227 has a contact hole exposing the drain electrode of the thin film transistor. The planarization layer 227 functions to uniformize the roughness of the substrate surface in order to apply the organic light emitting layer 242 constituting the organic light emitting device in a smooth flat state. The planarization layer 227 may be formed in various forms, such as an organic insulating film such as Benzocyclobutene (BCB) or acrylic (Acryl), or an inorganic insulating film such as a silicon nitride film (SiNx) or a silicon oxide film (SiOx). Various modifications are possible, such as being formed in a single layer or composed of double or multiple layers.

The organic light emitting device may have a shape in which the first electrode 241, the organic emission layer 242, and the second electrode 243 are sequentially arranged. That is, the organic light emitting device includes a first electrode 241 formed on the planarization layer 227, an organic emission layer 242 positioned on the first electrode 241, and a second electrode located on the organic emission layer 242 ( 243).

The first electrode 241 is electrically connected to the drain electrode 224 of the driving thin film transistor through the contact hole. When the organic light emitting diode display 200 is of a top emission type, the first electrode 241 may be made of an opaque conductive material having high reflectivity. For example, the first electrode 241 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof. . The first electrode 241 may be an anode of an organic light emitting diode.

The bank 244 is formed in regions other than the light emitting region. Accordingly, the bank 244 has a bank hole exposing the first electrode 241 corresponding to the emission region. The bank 244 may be made of an inorganic insulating material such as a silicon nitride film (SiNx) or a silicon oxide film (SiOx) or an organic insulating material such as BCB, acrylic resin or imide resin.

The spacer 245 may be formed on the bank 244. The spacer may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. Spacers can be omitted.

The organic light emitting layer 242 is positioned on the first electrode 241 exposed by the bank 244. The organic light emitting layer 242 may include a light emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, and the like. The organic light emitting layer may be configured as a single light emitting layer structure that emits one light, or may be composed of a plurality of light emitting layers to emit white light.

The second electrode 243 is positioned on the organic light emitting layer 242. When the organic light emitting display 200 is a top emission method, the second electrode 243 is a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). By being formed of a material, light generated in the organic emission layer 242 is emitted over the second electrode 243. The second electrode 243 may be a cathode of an organic light emitting diode.

The second electrode 243 may be covered with an encapsulation portion 230. The encapsulation unit 230 may include a first encapsulation layer 231, a second encapsulation layer 233, and a foreign material compensation layer 232.

The first encapsulation layer 231 is formed of an inorganic material series. The first encapsulation layer 231 uses one of silicon nitride (SiNx) or aluminum oxide (AlyOz) using a vacuum deposition method such as Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). It may be formed, but is not limited thereto.

The foreign material compensation layer 232 is formed of an organic material series. As the foreign material compensation layer 232, silicon oxycarbon (SiOCz) may be used, or acryl or epoxy-based resin may be used, but is not limited thereto. For example, when the foreign material compensation layer 232 is formed of SiOCz, the foreign material compensation layer 232 may be formed by a CVD process. SiOCz is inorganic, but can be classified as organic under certain conditions. Specifically, SiOCz has a different flowability depending on the atomic ratio (C / Si) ratio of silicon and carbon. For example, when the flowability of SiOCz deteriorates, it has characteristics close to inorganic matters, so the performance for compensating foreign matters is deteriorated. When the flowability is improved, it has characteristics close to organic matters, so performance for compensating foreign matters is improved. The C / Si ratio of SiOCz can be controlled by adjusting the ratio of oxygen (O2) and hexamethyldisiloxane (HMDSO) during the CVD process. In particular, when the foreign material compensation layer 232 is formed of SiOCz, the thickness of the encapsulation unit 230 may be very thin, and the thickness of the organic light emitting diode display 200 may be reduced.

For example, when the foreign material compensation layer 232 is formed of an acrylic or epoxy-based resin, the foreign material compensation layer 232 may be formed by a slit coating or a screen printing process. At this time, the epoxy-based resin may be a high viscosity bisphenol-A-epoxy (Bisphenol-A-Epoxy) or a low viscosity bisphenol-F-epoxy (Bisphenol-F-Epoxy). The foreign material compensation layer 232 may further include an additive. For example, a wetting agent that reduces the surface tension of the resin to improve the uniformity of the resin, a leveling agent to improve the surface flatness of the resin, and an antifoaming agent to remove bubbles contained in the resin ( Defoaming agent) may be further added as an additive. The foreign material compensation layer 232 may further include an initiator. For example, it is possible to use an antimony-based initiator or an anhydride-based initiator that cures the liquid resin by initiating a chain reaction by heat.

In addition, when the temperature of the resin increases, the viscosity of the liquid resin rapidly decreases, and after a certain period of time, the curing begins and the viscosity rises rapidly to complete curing. However, since the resin has high fluidity for a certain period of time during which the viscosity decreases, the possibility of over-applying is particularly increased.

The foreign material compensation layer 232 functions to cover foreign materials or particles that may occur in the process. For example, the first encapsulation layer 231 may have defects due to cracks generated by foreign substances or particles. However, the curvature and the foreign material may be covered by the foreign material compensation layer 232, and the upper surface of the foreign material compensation layer 232 may be flattened. That is, the foreign material compensation layer 232 compensates for the foreign material and flattens the display area 110. As a result, the foreign material compensation layer 232 may be referred to as a compensation layer.

The second encapsulation layer 233 is formed on the foreign material compensation layer 232 and the first encapsulation layer 231. The first encapsulation layer 231 and the second encapsulation layer 233 are formed to contact each other at an outer portion of the display panel. That is, the foreign matter compensation layer 232 may be sealed by the first encapsulation layer 231 and the second encapsulation layer 233. According to this structure, the foreign material compensation layer 232 is sealed by the first encapsulation layer 131 and the second encapsulation layer 233, thereby suppressing a direct water infiltration path through the foreign material compensation layer 232.

Hereinafter, the alignment structure will be described in detail with reference to FIG. 5.

The display device illustrated in FIG. 5 includes an alignment structure formed on the base layer 301. At this time, the base layer 301 includes a display area in which a plurality of pixels are formed and a non-display area around the display area.

The alignment structure is formed in the non-display area. The alignment structure includes an inorganic layer 350 and a metal layer 341.

The inorganic layer 350 may be formed of at least one layer of the buffer layer 302, the gate insulating layer 325, and the interlayer insulating layer 326 described above.

The metal layer 341 may be disposed at the edge of the display panel. The metal layer may have a predetermined pattern. 3, the metal layer 341 is illustrated as having a cross shape, but is not limited thereto.

The metal layer 341 may be a single layer formed of the first electrode 241, or may be a multiple layer.

The protective layer 360 is formed on the metal layer 341 to protect the metal layer 341 from being damaged. The protective layer 360 may be formed simultaneously with at least one of the bank 244 and the spacer 245, and may be made of the same material as at least one of the bank 244 and the spacer 245. In this case, the protective layer 360 is made of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. Can be formed.

Meanwhile, a separate protective layer 360 may be formed, but is not limited thereto. The protective layer 360 may be omitted. In this case, the metal layer 341 may be protected by the encapsulation portion 230.

As described above, when attaching the polarizing plate to the display panel through the alignment structure, the display panel and the polarizing plate can be bonded without misalignment by adjusting the bonding position, but the inventors of the present specification have found that there is also a problem with the metal layer of the alignment structure. . That is, when forming the inorganic layer, which is the lower layer of the metal layer, the flatness of the surface deteriorates due to the high temperature heat treatment and the surface treatment process, so that the adhesive strength decreases when the metal layer is deposited, and the etching solution flows to the portion where the adhesive strength is decreased when patterning the metal layer. In such a case, a phenomenon in which alignment of the metal layers was misaligned during the process of attaching the polarizer due to loss of the metal layer was observed. Accordingly, the present inventors devised an improved structure capable of solving the problem of the metal layer being lost.

6 is an exemplary diagram illustrating a display device according to an exemplary embodiment of the present specification.

In FIG. 6, the rest of the structure except for the alignment structure is the same as that described in FIG. 5, and duplicate description is omitted. However, in the display device described below, unlike FIG. 5, the alignment structure further includes an organic material layer 427, which will be mainly described below.

As shown in FIG. 6, the alignment structure includes an inorganic layer 460, an organic layer 427, and a metal layer 441.

The inorganic layer 450 may be formed of at least one of the buffer layer 402, the gate insulating layer 425, and the interlayer insulating layer 426 described above. That is, the inorganic layer 450 may be formed of only one of the buffer layer 402, the gate insulating layer 425, and the interlayer insulating layer 426, and may be formed of two layers selectively among these layers. . And all three layers can be formed.

The organic layer 427 is formed by directly contacting the inorganic layer 450. The organic material layer 427 may be formed simultaneously with the planarization layer 427 described above, and may be formed of the same material as the planarization layer 427. For example, it may be formed of a material such as BCB (Benzocyclobutene) or acrylic (Acryl).

The metal layer 441 is formed in direct contact with the top of the organic layer 427. The metal layer 441 may have a predetermined pattern. 3, the metal layer 441 is illustrated as having a cross shape, but is not limited thereto. The metal layer 441 may be patterned in various shapes such as circular, square, triangular, and rod shapes. The metal layer 441 may be formed at the same time as the first electrode 241 of the organic light emitting device, and may be formed of the same material as the first electrode 241. In this case, the metal layer 441 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

The metal layer 441 may be a single layer formed of the first electrode 241, but may also be a multiple layer. In this case, the lower layer of the metal layer 441 may be formed of the same material as the first electrode 241, and may be formed of the same material as the second electrode 243 of the organic light emitting device on the lower layer. For example, it may be formed of Indium Tin Oxide (ITO) or Induim Zinc Oxide (IZO).

The protective layer 460 is formed on the metal layer 441 to protect the metal layer 441 from being damaged. The protective layer 460 may be formed simultaneously with at least one of the bank 244 and the spacer 245, and may be made of the same material as at least one of the bank 244 and the spacer 245. In this case, the protective layer 460 is an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. Can be formed.

Meanwhile, a separate protective layer may be formed, but is not limited thereto. The protective layer may be omitted. In this case, the metal layer 441 may be protected by the encapsulation portion 230.

As described above, when the organic layer 427 is formed under the metal layer 441, the organic layer 427 has a better surface flatness than the inorganic layer, and adhesion may be improved when the metal layer 441 is deposited thereon. In this case, when patterning the metal layer 441, the etchant does not flow into the interface between the metal layer and the organic material layer, and the metal layer 441 is prevented from being lost. As a result, the phenomenon that the alignment structure is damaged due to the loss of the metal layer 441 is improved, and thus mis-alignment may be prevented in the process of attaching the polarizing plate.

The OLED display according to various embodiments of the present invention may be described as follows.

An organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate having a display area having a plurality of pixels and a non-display area around the display area; A thin film transistor disposed in the display area and an organic light emitting element electrically connected to the thin film transistor; An alignment structure disposed in the non-display area and provided for adjusting a bonding position between the substrate and the polarizer; And a protective layer covering the alignment structure, wherein the alignment structure may have a shape in which an inorganic insulating layer on a substrate, an organic insulating layer directly contacting the inorganic insulating layer, and a metal layer on the organic insulating layer are stacked.

The organic insulating layer may improve adhesion between the inorganic insulating layer and the metal layer.

The metal layer of the organic light emitting diode display according to the embodiment may be the same material as the anode electrode of the organic light emitting diode.

At this time, the anode electrode may be connected to the thin film transistor.

According to another feature of the invention, the surface flatness of the organic insulating layer may be greater than the surface flatness of the inorganic insulating layer.

The organic insulating layer may be formed in the same process with the same material as the planarization layer for planarizing the upper portion of the thin film transistor in the display area.

According to another feature of the present invention, the metal layer is composed of two layers, and the two layers are the same material as the first electrode (anode electrode) and second electrode (cathode) electrode of the organic light emitting device, respectively, which are disposed in the display area. Can be

The protective layer may be formed of the same material as the bank or spacer in the display area in the same process.

At this time, an encapsulation portion may be disposed on the protective layer.

According to another aspect of the invention, a substrate having a display area with a plurality of pixels and a non-display area around the display area; And an alignment structure including an inorganic insulating layer, a metal layer, and an adhesive reinforcing layer disposed between the inorganic insulating layer and the metal layer and enhancing adhesion between the two.

At this time, the adhesion-reinforced layer may be an organic insulating layer formed in the same process with the same material as the planarization layer for planarizing the upper portion of the thin film transistor in the display area.

Although the embodiments of the present specification have been described in detail with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and may be variously modified without departing from the technical spirit. Therefore, the embodiments disclosed in the present specification are not intended to limit the technical spirit of the present invention, but to explain the scope, and the scope of the technical spirit of the present invention is not limited by the embodiments. Each of the features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and may be technically interlocked and driven by a person skilled in the art, and each of the embodiments may be implemented independently of each other or together in an associative relationship. It may be practiced. The scope of protection of the present invention should be interpreted by the claims below, and all technical spirits within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

201, 301, 401: base layer
202, 302, 402: buffer layer
220: thin film transistor
221: semiconductor layer
222: gate electrode
223: source electrode
224: drain electrode
225, 325, 425: gate insulating layer
226, 326, 426: interlayer insulating film
227,427: planarization layer
240: organic light emitting device
241, 341, 441: first electrode
242: organic light emitting layer
243: second electrode
244: bank
245: spacer
230: sealing bag
231: first sealing layer
232: foreign body compensation layer
233: second sealing layer

Claims (19)

A substrate having a display area with a plurality of pixels and a non-display area around the display area;
A thin film transistor disposed in the display area and an organic light emitting device electrically connected to the thin film transistor;
An alignment structure disposed in the non-display area and provided for adjusting a bonding position between the substrate and the polarizer; And
A protective layer covering the alignment structure,
The alignment structure,
An organic light emitting display device having a shape in which an inorganic insulating layer on the substrate, an organic insulating layer directly contacting the inorganic insulating layer, and a metal layer on the organic insulating layer are stacked. According to claim 1,
The organic insulating layer improves adhesion between the inorganic insulating layer and the metal layer. According to claim 1,
The metal layer is made of the same material as the anode electrode of the organic light emitting diode, the organic light emitting display device. According to claim 3,
The anode electrode is connected to the thin film transistor, an organic light emitting display device. According to claim 1,
An organic light emitting display device having a surface flatness of the organic insulating layer greater than that of the inorganic insulating layer. According to claim 1,
The organic insulating layer is formed in the same process with the same material as the planarization layer for planarizing the upper portion of the thin film transistor in the display area. According to claim 1,
The metal layer is composed of two layers,
The two layers are made of the same material as the anode electrode of the organic light emitting element and the cathode electrode of the organic light emitting element, respectively, disposed in the display area. According to claim 1,
The protective layer is formed of the same material as the bank or spacer in the display area, the organic light emitting display device. The method of claim 8,
An encapsulation portion is disposed on the protective layer, the organic light emitting display device. A substrate having a display area with a plurality of pixels and a non-display area around the display area; And
And an alignment structure including an inorganic insulating layer, a metal layer, and an adhesive strengthening layer disposed between the inorganic insulating layer and the metal layer and enhancing adhesion between the inorganic insulating layer and the metal layer. The method of claim 10,
And a thin film transistor disposed in the display area and an organic light emitting element electrically connected to the thin film transistor. The method of claim 10,
The adhesive reinforcement layer is an organic insulating layer, a display device The method of claim 11,
The metal layer is the same material as the anode electrode of the organic light emitting device, the display device. The method of claim 13,
The anode electrode is connected to the thin film transistor, a display device .. The method of claim 12,
The surface flatness of the adhesive reinforcement layer is greater than the surface flatness of the inorganic insulating layer. The method of claim 12,
The adhesive enhancement layer is formed in the same process with the same material as the planarization layer for planarizing the upper portion of the thin film transistor in the display area. The method of claim 10,
A display device further includes a protective layer on the metal layer. The method of claim 17,
The protective layer is formed in a process using the same material as a bank or spacer in the display area. The method of claim 18,
An encapsulation portion is disposed on the protective layer, the organic light emitting display device.

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