KR20200010637A - Resonator and photocarrrier well integrated periodic bridge structure using periodic simultaneous variation of refractive index and strain and manufacturing method thereof - Google Patents

Abstract

Disclosed are a resonator and charge restriction structure integrated periodic bridge structure using periodic simultaneous variation of a refractive index and a strain and a method for manufacturing the same. The resonator and charge restriction structure integrated periodic bridge structure according to one embodiment comprises a resonator having a bridge structure with periodicity configured through patterning on a thin film grown on a substrate; and a charge restriction structure simultaneously coupled with the resonator, wherein a strain is applied to the charge restriction structure.

Description

RESULATOR AND PHOTOCARRRIER WELL INTEGRATED PERIODIC BRIDGE STRUCTURE USING PERIODIC SIMULTANEOUS VARIATION OF REFRACTIVE INDEX AND STRAIN AND MANUFACTURING METHOD THEREOF}

The following embodiments relate to a resonator and charge binding structure integrated periodic bridge structure, and more particularly, to a resonator and charge binding structure integrated periodic bridge structure using a periodic simultaneous change of refractive index and strain and a method of manufacturing the same.

Optical interconnection technology, the only alternative to solve the bottleneck of data transmission, which is a chronic problem of computers operating with existing copper wire-based devices, has been developed under the initiative of resonators of advanced countries. Through the development and maturation of technologies such as computing, information processing and silicon-based optical integrated circuits, they have been developed to the practical level.

With the recent spread of broadband communications services, the volume of information has been continuously increasing, and it is expected that future high-performance computing will require not only data center but also on-board optical interconnect technology. Optical interconnect technology for data transfer between chips in a board includes elements of various optical integrated devices. While the main elements of silicon-based optical integrated devices have developed a lot, I have been through a lot of difficulties.

The most commonly used semiconductor-based light source is a group III-V compound semiconductor, and the compound semiconductor light source of the optical communication band has made great progress by itself, but it is difficult to grow directly on a silicon substrate, which is a silicon chip-based optical interconnection technology. The application was limited.

As a candidate for conventional silicon-based Complementary Metal-Oxide Semiconductor (CMOS) process-friendly semiconductor light sources, group III-V compound semiconductors are still the most industrially developed, but they are still unable to grow directly on silicon substrates. A wafer bonding process is required, leading to higher process costs and lower yields.

In order to solve this problem, a strain-based germanium (Ge) -based light source has been proposed as an alternative technology. However, in the related art, the overlapping of the optical resonance mode-gain material due to the external design of the resonator The small, difficult-to-use structural features of the charge-constrained structures used in Group III-V chemical semiconductors still limit their application to optical interconnections between devices.

Korean Patent Laid-Open Publication No. 10-2009-0012472 relates to a method of forming a germanium mesa structure on a silicon substrate, and after forming a silicon-germanium mesa structure containing only pure germanium or a controlled concentration of silicon, the gallium is used therein. A technique for forming a germanium mesa structure for forming an arsenic thin film or the like on a silicon substrate is described.

Korean Patent Publication No. 10-2009-0012472

Embodiments describe a resonator and charge-constrained structure-integrated periodic bridge structure using a simultaneous simultaneous change of refractive index and strain and a method of manufacturing the same. More specifically, a resonator and strain having a periodicity in a known nanobridge structure are described. By simultaneously combining the charge-constraining structure according to the structure, and fabricating a structure in which the overlapping of the charge-conducting region due to strain and the resonance mode of the resonator coincides, it provides a technology for producing a high-efficiency light source based on silicon chip that does not require additional wafer bonding process. do.

In addition, the embodiments are made by matching the mode distribution of the photonic crystal to the gain region through a combination of a photonic crystal resonator and an artificial charge well structure having a periodic width change in the strain structure of the semiconductor not only in the silicon chip but also in all the heterogeneous substrate epitaxy. The present invention provides a resonator and charge confinement structure-integrated periodic bridge structure using a simultaneous simultaneous change of refractive index and strain capable of fabricating a low threshold laser oscillation element, and a method of manufacturing the same.

In one embodiment, a resonator and a charge restraint structure integrated periodic bridge structure may include a resonator having a bridge structure having periodicity formed by patterning a thin film grown on a substrate; And a charge constraining structure to which a strain that is simultaneously coupled to the resonator is applied.

The overlap of the charge confinement structure and the resonance mode of the resonator due to the strain may be made to match.

It is composed of an integral periodic bridge structure of a resonator and a charge restraint structure using periodic simultaneous change of refractive index and strain to impart a charge restraining effect on the substrate in the horizontal direction and match the optical mode distribution.

The resonator may be formed of a bridge structure of nano-micro size through patterning on a thin film in which a semiconductor thin film grown on the substrate is subjected to strain.

The resonator may be formed of a silicon substrate, and may have a bridge structure through patterning after growing a germanium thin film on the silicon substrate.

The charge confinement structure may have a periodic charge confinement structure similar to the quantum well structure used in the III-V compound semiconductor according to the strain difference between the wide region and the narrow region of the resonator of the designed bridge structure.

According to another embodiment of the present invention, a method of manufacturing a periodic bridge structure integrated with a resonator and a charge restraint structure may include: growing a semiconductor thin film on a heterogeneous substrate and applying strain according to a difference in thermal expansion coefficient or a difference in lattice constant between the substrates; And simultaneously forming a resonator having a bridge structure and a charge confinement structure through a patterning process on the thin film.

Etching a pattern on the substrate and the thin film using a dry etching method such as using inductively coupled plasma (ICP), reactive ion etching (RIE), or both; And performing an undercut of the substrate and performing a wet etching of the substrate layer on the thin film.

The step of simultaneously forming the resonator and the charge confinement structure includes finding a resonant wavelength of the resonator using a computer simulation method and matching the wavelength with the light emission wavelength in the strain applying region of the device, and the electric field inside the resonator at the corresponding wavelength. Designing the distribution to match the strain application region.

The structure of the resonator adjusts the band structure which is changed according to the variable of at least one of the lattice constant, the thickness, the width of the legs, and the size of the hole for the periodic charge restraining effect, thereby adjusting the band end of the first band of the corresponding structure. We can make the band edge of the first low index mode band at and have a frequency consistent with the resonant wavelength.

The simultaneous forming of the resonator and the charge confinement structure may use a bandgap of a specific mode according to light emission characteristics and uses when designing using the computer simulation methodology, and the bandgap of the specific mode may be determined according to light emission characteristics of a target material. It may be a TM mode (Transverse Magnetic Mode) or TE mode (Transverse Electric Mode).

The simultaneously forming the resonator and the charge confinement structure may further include applying a strain simulation method to the structure of the optically designed resonator to obtain strain distribution for resonant wavelength.

Computing the strain distribution by applying the computer simulation methodology to the structure of the resonator, it is possible to adjust the size of the strain acting on the bridge according to the width ratio of the leg and pad portion serving as the resonator or the shape of the periodic structure in the bridge. In addition, the light emission wavelength may vary in the charge confinement region of the resonator according to the strain applied to the narrow portion of the optically designed resonator.

Depending on the strain difference between the wide and narrow regions of the resonator of the designed bridge structure may have a periodic charge confinement structure similar to the quantum well structure used in the compound semiconductor. The band structure of the charge confinement structure has a periodicity that matches the periodicity of the applied strain.

The overlap of the charge confinement structure and the resonance mode of the resonator due to the strain may be made to match.

According to the embodiments, since the shape of the resonator itself has a charge restraining effect in the semiconductor, the periodic simultaneous change of refractive index and strain may induce high electron-photon interaction due to the coincidence of the charge confinement region and the distribution region of the resonator mode. It is possible to provide a resonator and a charge binding structure integrated periodic bridge structure and a method of manufacturing the same.

In addition, according to embodiments, the optical device manufactured through all the heterogeneous substrate epitaxy maximizes the strain applied between the heterogeneous materials and simultaneously matches the optical mode distribution while giving charge restraining effect in the horizontal direction instead of the vertical direction of the substrate. It can be applied to the performance improvement of semiconductor laser devices and devices.

1 is a view for explaining a method of manufacturing a resonator and a charge binding structure integrated periodic bridge structure according to an embodiment.
2 is a diagram illustrating an example of a final germanium bridge structure according to one embodiment.
3 is a flowchart illustrating a method of manufacturing a resonator and a charge binding structure integrated periodic bridge structure, according to an exemplary embodiment.
4 illustrates an example of a periodic structure in which a resonator is coupled to a semiconductor bridge, according to an exemplary embodiment.
5 is a diagram illustrating a strain distribution diagram for charge confinement in a bridge coupled with a resonator structure according to an exemplary embodiment.

Hereinafter, embodiments will be described with reference to the accompanying drawings. However, the described embodiments may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. In addition, various embodiments are provided to more fully describe the present invention to those skilled in the art. Shapes and sizes of elements in the drawings may be exaggerated for clarity.

When a semiconductor thin film grown on a silicon substrate is strained due to a difference in coefficient of thermal expansion, stronger strain can be applied by fabricating a nano-micro-sized bridge structure through patterning on the thin film. have. When a semiconductor material is grown on a dissimilar substrate, strain is caused by different coefficients of thermal expansion of the two materials, and when the strain is locally increased by using a bridge structure, the strain is artificially changed through a band gap due to strain. The effect of charge confinement can be expected by simulating heterojunction structure.

In the present invention, a resonator having a periodicity and a charge restraint structure according to strain are simultaneously coupled to a known nano bridge structure, and an overlap of an artificial charge restraint structure due to strain and a resonance mode of the resonator coincide. By fabricating the structure, an object is to produce a highly efficient light source based on a silicon chip that does not require an additional wafer bonding process.

In addition, through the combination of charge resonant structure and optical resonator with periodic width change in the strain structure of semiconductors occurring not only in silicon chips but also in all heterogeneous substrate epitaxy, the mode distribution of the resonator is matched to the gain region by low The laser oscillation element of a threshold can be manufactured.

1 is a view illustrating a method of manufacturing an integrated periodic bridge structure of a resonator and a charge confinement structure, according to an exemplary embodiment.

As illustrated in FIG. 1, a method of manufacturing a resonator and a charge binding integrated periodic bridge structure may be described through a view showing an example of a process diagram of manufacturing a germanium bridge on a silicon substrate according to an embodiment.

According to one embodiment, a resonator and charge-constrained structure-integrated periodic bridge structure includes: 1) strain growth according to heterogeneous semiconductor thin film growth and thermal expansion coefficient difference, 2) patterning process on thin film, and 3) ICP-RIE (Inductively). Pattern etching process using Coupled Plasma-Reactive Ion Etch), and 4) chemical substrate layer wet etching process and semiconductor formation process. That is, the resonator and the charge confinement structure-integrated periodic bridge structure according to one embodiment may be manufactured according to the above process and semiconductor formation process.

The above process is almost the same as the method for manufacturing a semiconductor bridge structure generally known, but in this embodiment, in order to combine an artificial resonant structure using an strain with an optical bridge and an optical resonator at the same time, a unique structure in the patterning of the patterning process is employed. Can be designed.

The pattern design of the pattern in the patterning process may be manufactured according to the following design process for simultaneous formation of the resonator and the artificial charge restraint structure.

First, using the computer simulation methodology such as Finite Difference Time Domain Method (FDTD), Finite Elements Method (FEM), and Finite Difference Method (FDM), It is possible to design a resonator with a suitable structure. The structure of the resonator adjusts the band structure that changes according to the structure variables for periodic charge restraint effect, so that the band edge of the first low refractive index mode band at the band end (k = 0.5) of the first band of the structure. It can be made to have a frequency consistent with the resonant wavelength. Here, the parameters of the structure can be, for example, the lattice constant, the thickness, the width of the legs and the size of the holes. At this time, it can be seen that the electric field distribution of the low refractive index mode is exactly matched to the low refractive index portion of the structure (the narrowed portion of the structure).

In the design using optical computer simulation, a bandgap of a specific mode according to light emission characteristics and uses is used. For example, the band gap of a specific mode may be a TM mode (Transverse Magnetic Mode) or TE mode (Transverse Electric Mode).

Thereafter, the strain distribution may be calculated by applying a finite element method to the structure of the optically designed resonator. The size of the strain acting on the leg can be adjusted according to the width ratio between the leg and the pad portion serving as the resonator. Depending on the strain on the narrow part of the optically designed resonator, the light emission wavelength may be changed in the charge confinement structure region of the resonator.

Accordingly, according to the strain difference between the wide region and the narrow region of the designed resonator, it has a periodic charge restraint structure similar to that of the quantum well structure used in the III-V compound semiconductor. The restraining effect of the charge transporter due to the difference in strain is greater than the energy difference of a general quantum well, and the confinement region of the electron transporter and the distribution region of the optical mode are exactly the same.

Hereinafter, the silicon substrate 110 will be described in more detail as an example on behalf of the heterogeneous substrate.

As shown in FIG. 1A, the thin film 120 may be grown on the prepared silicon substrate 110 using an epitaxial growth technique. Here, the germanium thin film may be grown on the substrate as an example of the thin film 120. In addition, the same principle applies to the thin film 120 in the case of a Group 4 element alloy such as Sn, GeSn, SiGe, etc. having a different thermal expansion coefficient while directly growing on the silicon substrate 110 as well as the germanium thin film.

And strain according to the difference in thermal expansion coefficient can be applied. When the thin film 120 grown on the silicon substrate 110 is strained due to a difference in thermal expansion coefficient, a nano-microscopic bridge structure is fabricated through patterning on the thin film 120. This can be applied even stronger strain.

Subsequently, as shown in FIG. 1B, the thin film 120 is performed using a conventional etching process, and as shown in FIG. 1C, the etched thin film 120 is illustrated. The oxide layer 130 may be deposited on the substrate. For example, the oxide film 130 may be a silicon oxide film SiO ₂ .

Next, as shown in (d) of FIG. 1, spin coating 140 may be performed on the surface of the oxide film 130, for example, resist spin coating may be performed. As shown in (e) of FIG. 1, the portion of the spin coating 140 is patterned through a lithography process using an E-beam or the like, and is shown in FIG. As described above, the deposition layer 150 may be formed by depositing nickel (Ni) on the patterned spin coating 140. For example, a nickel deposition layer having a thickness of 50 nm can be formed.

Thereafter, as shown in FIG. 1G, an organic solvent may be used to lift off the portion of the spin coating 140 on which the deposition layer 150 is formed, where acetone is used as the organic solvent. (acetone) and the like can be used. Subsequently, as illustrated in FIG. 1H, the oxide film 130 and the thin film 120 under the lifted-off portion may be patterned, and the silicon substrate 110 may also be patterned. For example, the thin film 120 and the silicon substrate 110 may be pattern etched using inductively coupled plasma-active ion etching (ICP-RIE).

Thereafter, as shown in FIG. 1I, an undercut of the silicon substrate 110 may be performed, and for example, etching may be performed using a developer tetramethyl ammounium hydroxide (TMAH) at 95 ° C. . As shown in FIG. 1J, a chemical substrate layer wet etching process may be performed. That is, the thin film 120 may be wet etched through H ₂ O ₂ at room temperature. Next, as shown in FIG. 1 (k), the oxide layer 130 and the deposition layer 150 may be lifted off through HF etching at room temperature.

2 is a diagram illustrating an example of a final germanium bridge structure according to one embodiment.

Referring to FIG. 2, the final germanium bridge structure according to one embodiment may be manufactured by the method described with reference to FIG. 1.

The resonator and charge confinement structure integrated periodic bridge structure according to an embodiment is a strain applied charge coupled to the resonator and the resonator of the bridge structure having periodicity formed by patterning the thin film grown on the substrate It may be made including a restraint structure, it may be made of a structure in which the overlap of the resonance mode of the resonator and the charge confinement structure due to the strain.

In this way, the resonator using the periodic simultaneous change of the refractive index and the strain is composed of an integral periodic bridge structure of the charge restraint structure to give charge restraining effect to the substrate in the horizontal direction and to match the optical mode distribution.

The resonator may be formed of a nano-micro-sized bridge structure by patterning the semiconductor thin film grown on the substrate due to the difference in thermal expansion coefficient. The resonator may be formed of a silicon substrate, and may have a bridge structure through patterning after growing a germanium thin film on the silicon substrate.

The charge restraint structure may have a periodic charge restraint structure similar to the charge restraint structure used in the III-V compound semiconductor according to the strain difference between the wide region and the narrow region of the designed bridge structure resonator.

In order to act as an optical resonator, the periodicity of the semiconductor bridge is important. The periodicity can be designed in various forms, but since the effective refractive index change of the resonator is obtained through the periodicity, the energy of the resonator wavelength and the resonator quality can be adjusted as well as the shape of the resonator according to the geometric elements of the resonator shape. 2 (a) and 2 (b) are examples of a structure in which a resonator and a strain change are simultaneously obtained using a periodic change in the effective refractive index. All types of germanium bridges that can have periodic changes in the effective refractive index can be considered.

3 is a flowchart illustrating a method of manufacturing a resonator and a charge binding structure integrated periodic bridge structure, according to an exemplary embodiment.

Referring to FIG. 3, a method of manufacturing a resonator and a charge binding structure integrated periodic bridge structure according to an embodiment may be performed by, for example, a manufacturing system (or apparatus) of the resonator and the charge binding structure integrated periodic bridge structure. In one embodiment, a method of manufacturing a resonator and an integrated charge bridge structured periodic bridge structure includes growing a semiconductor thin film on a dissimilar substrate and applying strain (310) according to a difference in thermal expansion coefficient or a lattice constant between the substrates, and And a step 320 of simultaneously forming a resonator having a bridge structure and a charge confinement structure through a patterning process on the thin film. In operation 320, lithography techniques such as E-Beam lithography or photolithography may be used for the thin film.

In addition, the step of etching the pattern on the substrate and the thin film using an etching process (330), and the undercut of the substrate to remove the portion connected to the structure of the thin film from the substrate through the chemical etching of the substrate layer to the thin film Step 340 may further include. In particular, in step 330, the pattern may be etched on the substrate and the thin film using an inductively coupled plasma-reactive ion etching (ICP-RIE) using a dry etching process using at least one of reactive ion etching (RIE). In operation 340, after performing the undercut of the substrate, etching may be performed through chemical wet etching of the substrate layer on the thin film.

In this case, the etching of the thin film may be used alone or the ICP-RIE alone, which may be selected differently according to the material and thickness of the thin film. For the undercut of the substrate, all chemical etching methods such as wet etching using TMAH or KOH solution and gas etching using XeF2 can be used. In this case, selective etching with a thin film may be performed. Use possible solutions or gases.

The resonator and the charge confinement structure integrated periodic bridge structure (body) may be formed of a structure in which the overlap between the charge confinement structure due to strain and the resonance mode of the resonator coincides.

In particular, the step 320 of simultaneously forming the resonator and the charge confinement structure includes a finite difference time domain method (FDTD), finite elements method (FEM) and finite difference method (FDM). Design a resonator with a structure that matches the operating wavelength of the device using at least one of the computer simulation methodologies to match the light emission wavelength of the artificial charge-constrained structure by the strain. Can be.

At this time, the structure of the resonator adjusts the band structure which is changed according to the variable of at least one of the lattice constant, thickness, leg width and hole size for the periodic charge restraining effect, thereby adjusting the band of the first band of the structure. At the end, the band edge of the first low-index mode band can be made to have a frequency consistent with the resonant wavelength. When designing using a computer simulation methodology, a bandgap of a specific mode according to luminescence properties and uses is used, and the bandgap of the specific mode may be a TM mode (Transverse Magnetic Mode) or a TE mode (Transverse Electric Mode).

In operation 320, the method may further include calculating a strain distribution by applying a computer simulation methodology to a structure of an optically designed resonator.

The size of the strain acting on the leg can be adjusted according to the width ratio of the leg and the pad portion serving as the resonator, and the light emission wavelength can be changed in the charge restraint region of the resonator according to the strain applied to the narrow portion of the optically designed resonator.

According to the strain difference between the wide region and the narrow region of the bridge resonator designed as described above, it may have a periodic charge restraint structure similar to that of the quantum well structure used in the III-V compound semiconductor.

Existing III-V compound semiconductor-based light emitting devices are almost impossible to grow directly on a silicon-based substrate, or when they grow, they cause performance deterioration due to a large defect density due to a large structural constant difference and a lattice structure. Germanium photovoltaic devices can be grown directly on silicon-based substrates and have relatively low defect densities. In addition, the same principle applies not only to germanium but also to Group 4 element alloys such as Sn, GeSn, and SiGe, which have a different coefficient of thermal expansion while directly growing on a silicon substrate.

Conventional germanium or germanium-tin alloy optical devices have a low luminous efficiency, which makes laser oscillation difficult or has a high energy threshold, and due to a low resonator efficiency or an externally designed resonator, much of the mode distribution is located outside the structure. Because of the low mode overlap, it was difficult to obtain sufficient density inversion.

On the other hand, the structure according to the embodiments can induce a high electron-photon interaction due to the matching of the confinement region of the charge and the distribution region of the resonator mode because the shape of the resonator itself has a charge restraining effect in the semiconductor.

In optical devices fabricated through heterogeneous substrate epitaxy with different thermal expansion coefficients, the strain due to thermal expansion is maximized, and the optical mode distribution is matched at the same time while giving a charge restraining effect in the horizontal direction instead of the vertical direction of the substrate. It can be applied.

4 illustrates an example of a periodic structure in which a resonator is coupled to a semiconductor bridge, according to an exemplary embodiment.

4 shows an example of a periodic structure in which a resonator is coupled on a semiconductor bridge according to an embodiment, and shows an optical band structure, an electric field distribution diagram, an agreement between an electric field distribution region and a strain distribution region in the structure. .

In order to form a resonator on the semiconductor bridge, a structure capable of having a photonic bandgap must be formed. The energy of the bandgap and the quality of the resonator are determined according to the periodic shape of the semiconductor bridge. The resonator has a photonic band gap according to the change of the effective refractive index of the periodic structure, which can be implemented in various forms.

In the above example of the structure of FIG. 2 (b), when performing computer simulation, the first band of the resonator photonic crystal is given as shown in (a) of FIG. 4 and the second band is shown as (b). In this case, the electric field distribution coincides with the strain focusing region in the corresponding structure shown in FIG. 5 to be described later, which is similar to that of all structures having periodic variations in effective refractive index as well as (a) and (b) of FIG. 2. It is given in the same form in TM mode.

In the case of all semiconductor materials (eg, germanium, germanium-tin alloys, and other compound semiconductors) which have a band gap reduction due to the tensile force, if the periodic tensile force is changed, the band equals the period of change of the tensile force according to the change of the band structure. You have a structural well. As a result, electrons can be collected in the well region of the band structure in which the tensile force is strongly applied. This change in the periodic tensile force can be obtained by giving a periodic change in the width of the bridge structure, which is optically very similar to the structure of the photonic crystal. If the electric field distribution in the resonant mode coincides with the focusing region of the tensile force, there is a high probability that the charge carriers will be isolated within the charge wells formed by the tensile force, and the higher density of the charge carriers and the electric field will interact, causing the laser to oscillate. Increase

And FIG. 5 is a diagram illustrating a strain distribution diagram in a leg coupled with a resonator structure according to one embodiment.

According to embodiments, a periodic charge restraint structure using a strain and a resonator may be fabricated simultaneously in a heterogeneous substrate epitaxy, and an artificial periodic charge due to strain using a periodic structure when strain is applied due to a difference in thermal expansion coefficient with the substrate. You can create constraint structures. The artificial charge confinement structure using the semiconductor periodic structure coincides with the optical mode distribution of the resonator to match the charge confining region of the semiconductor charge confinement structure.

When a component is said to be "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that another component may be present in the middle. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

In addition, the terms “… unit”, “… module”, etc. described in the specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software or a combination of hardware and software.

In addition, the components of the embodiments described with reference to the drawings are not limited to the corresponding embodiments, and may be implemented to be included in other embodiments within the scope of the technical idea of the present invention. Although the description is omitted, it is obvious that a plurality of embodiments may be reimplemented into one integrated embodiment.

In addition, in the description with reference to the accompanying drawings, the same components regardless of reference numerals will be given the same or related reference numerals and redundant description thereof will be omitted. In the following description of the present invention, when it is determined that the detailed description of the related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

Although the embodiments have been described by the limited embodiments and the drawings as described above, various modifications and variations are possible to those skilled in the art from the above description. For example, the described techniques may be performed in a different order than the described method, and / or components of the described systems, structures, devices, circuits, etc. may be combined or combined in a different form than the described method, or other components. Or, even if replaced or substituted by equivalents, an appropriate result can be achieved.

Therefore, other implementations, other embodiments, and equivalents to the claims are within the scope of the claims that follow.

Claims (15)

A resonator having a bridge structure having a periodicity formed by patterning the thin film grown on the substrate; And
Strain applied charge strain structure coupled to the resonator at the same time
A resonator and charge restraining structure integrated periodic bridge structure comprising a. The method of claim 1,
Consisting of a structure in which the overlap between the charge confinement structure due to strain and the resonance mode of the resonator is coincident
And a resonator and charge confinement structure integrated periodic bridge structure. The method of claim 1,
Comprising an integral periodic bridge structure of resonator and charge restraint structure using periodic simultaneous change of refractive index and strain to give charge restraining effect to the substrate in the horizontal direction and to match the optical mode distribution
And a resonator and charge confinement structure integrated periodic bridge structure. The method of claim 1,
The resonator,
The semiconductor thin film grown on the substrate is made of nano-micro-sized bridge structure through patterning on the thin film, which is strained by the difference in thermal expansion coefficient.
And a resonator and charge confinement structure integrated periodic bridge structure. The method of claim 1,
The resonator,
The substrate is made of a silicon substrate, having a bridge structure by patterning after growing a germanium thin film on the silicon substrate
And a resonator and charge confinement structure integrated periodic bridge structure. The method of claim 1,
The charge confinement structure,
Having a periodic charge restraint structure similar to the charge restraint structure used in group III-V compound semiconductors according to the strain difference between a wide region and a narrow region of the resonator of the designed bridge structure
And a resonator and charge confinement structure integrated periodic bridge structure. Growing a semiconductor thin film on a heterogeneous substrate and applying strain according to a difference in coefficient of thermal expansion or a difference in lattice constant between the substrates; And
Simultaneously forming a resonator having a bridge structure and a charge restraint structure through a patterning process on the thin film;
A method of manufacturing a resonator and charge confinement structure integrated periodic bridge structure comprising a. The method of claim 7, wherein
Etching a pattern on the substrate and the thin film using an etching process; And
Performing an undercut of the substrate to remove a portion connected to the structure of the thin film from the substrate through chemical etching of the substrate layer on the thin film
Further comprising a resonator and charge-constraining structure integrated periodic bridge structure manufacturing method. The method of claim 7, wherein
Simultaneously forming the resonator and the charge confinement structure,
Designing the resonator having a structure suitable for the operating wavelength of the device by using a computer simulation methodology, and matching the strain of the structure derived using another computer simulation methodology with the emission wavelength of the artificial charge-constrained structure by the strain.
A method of manufacturing a resonator and charge confinement structure integrated periodic bridge structure comprising a. The method of claim 9,
The structure of the resonator,
The first low refractive index mode at the end of the band of the first band of the structure is adjusted by adjusting the band structure, which is dependent on a variable of at least one of the lattice constant, thickness, leg width, and hole size for periodic charge confinement effects. To have a band edge of the band and a frequency consistent with the resonant wavelength
A resonator and a charge restraining structure-integrated periodic bridge structure manufacturing method. The method of claim 9,
Simultaneously forming the resonator and the charge confinement structure,
When designing using the computer simulation methodology, a bandgap of a specific mode according to light emission characteristics and uses is used, and the bandgap of the specific mode is TM mode (Transverse Magnetic Mode) or TE mode (Transverse Electric) according to the light emission characteristics of the target material. Being Mode)
A resonator and a charge restraining structure-integrated periodic bridge structure manufacturing method. The method of claim 9,
Simultaneously forming the resonator and the charge confinement structure,
Calculating strain distribution by applying the computer simulation methodology to the structure of the optically designed resonator
Further comprising a resonator and charge-constraining structure integrated periodic bridge structure manufacturing method. The method of claim 12,
Computing the strain distribution by applying the computer simulation methodology to the structure of the resonator,
The size of the strain acting on the leg can be adjusted according to the width ratio of the leg and pad part serving as the resonator, and the light emission wavelength is changed in the charge restraint region of the resonator according to the strain applied to the narrow part of the optically designed resonator.
A resonator and a charge restraining structure-integrated periodic bridge structure manufacturing method. The method of claim 7, wherein
Having a periodic charge confinement structure similar to the quantum well structure used in conventional compound semiconductors according to the strain difference between the wide and narrow regions of the resonator of the designed bridge structure
A resonator and a charge restraining structure-integrated periodic bridge structure manufacturing method. The method of claim 7, wherein
Consisting of a structure in which the overlap between the charge confinement structure due to strain and the resonance mode of the resonator is coincident
A resonator and a charge restraining structure-integrated periodic bridge structure manufacturing method.

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