KR20190132712A - Deposition device depositing atomic layer - Google Patents

Abstract

A deposition apparatus depositing an atomic layer comprises: a substrate depositing a process chamber and a deposition sample; a heater disposed under a substrate and controlling a temperature of the deposition sample deposited on the substrate; and a block unit disposed on the substrate and installed inside the process chamber to include a cover fixing the deposition sample. A plurality of block units are configured, and the plurality of block units can be configured so that each block unit can be assembled in a block type.

Description

Deposition apparatus for depositing atomic layers {DEPOSITION DEVICE DEPOSITING ATOMIC LAYER}

The present invention relates to a deposition apparatus for depositing an atomic layer.

Atomic Layer Deposition (ALD) is a method of depositing a thin film through a sequential reaction process between a precursor in the gas phase and a reactant, which is an oxidant, to a material requiring deposition. The atomic layer deposition method is easy to control the deposition thickness of the atomic unit due to the self-saturated reaction (Self-Saturated Reaction) characteristics, it may have a uniformity and deposition precision of the multi-area.

However, the atomic layer deposition method has a disadvantage in that it reacts sensitively depending on the process temperature. The temperature range suitable for the atomic layer deposition method process is called an ALD process temperature range (ALD Window). If the temperature is higher or lower than this range, the thin film does not grow normally.

On the other hand, plasma enhanced atomic layer deposition (PEALD), along with the advantages of the conventional atomic layer deposition method, can deposit high quality thin films at low process temperatures and control the physical and chemical properties of thin films. Can be.

In addition, the plasma-based atomic layer deposition method can adjust the characteristics of the plasma (Ion density, Ion Flux) by using a biasing technique, and set the characteristic conditions of the deposited thin film. have.

Conventional deposition apparatus includes a substrate that does not reflect the characteristics of the atomic layer deposition method, and includes a process temperature control controller that can adjust only the temperature of the entire reaction chamber (Chamber) or the entire substrate. In the conventional thin film deposition apparatus, since it is difficult to set various conditions in the initial process research using the atomic layer deposition method, it is difficult to secure the efficiency and reliability of the experiment.

Korean Laid-Open Patent Publication No. 2017-0053320 (published May 16, 2017)

The present invention is to solve the above problems of the conventional deposition apparatus, to provide a deposition apparatus including a plurality of block portions provided in the processing chamber. In addition, each block portion of the deposition apparatus is to adjust the temperature of the deposition sample deposited on each substrate through a heater disposed under the substrate for depositing the deposition sample. In addition, the characteristics of the plasma are controlled through bias electrodes formed on each substrate. However, the technical problem to be achieved by the present embodiment is not limited to the technical problems as described above, and other technical problems may exist.

As a technical means for achieving the above technical problem, a deposition apparatus for depositing an atomic layer according to the first aspect of the present invention is a substrate for depositing a processing chamber and a deposition sample, disposed on the substrate and deposited on the substrate A block portion disposed inside the processing chamber to include a heater for controlling a temperature of a deposited sample and a cover disposed on an upper portion of the substrate and fixing the deposited sample, wherein the block portion includes a plurality of blocks; The unit may be configured such that each block unit can be assembled in a block form.

The deposition apparatus may further include a controller configured to control the temperature of the deposition sample by connecting to the heater, wherein the controller may independently adjust temperatures of the deposition samples deposited on the respective substrates of the plurality of block portions. .

In one embodiment, each block portion may further include a holder for supporting the substrate, the heater and the cover, the holder may include a hole formed in the lower portion of the heater. The hole may be formed to supply power to heaters corresponding to the substrates.

In one embodiment, the deposition apparatus further includes a mount body for mounting the plurality of block portions, the mount body is coated with a portion adjacent to the plurality of block portions to prevent heat conduction between the plurality of block portions.

The above-mentioned means for solving the problems are merely exemplary, and should not be construed to limit the present invention. In addition to the exemplary embodiments described above, there may be additional embodiments described in the drawings and detailed description of the invention.

According to any one of the problem solving means of the present invention described above, it is possible to provide a vapor deposition apparatus including a plurality of block portions provided in the processing chamber. In addition, each block of the deposition apparatus may individually adjust the temperature of the deposition sample deposited on each substrate through a heater disposed below the substrate on which the deposition sample is deposited. In addition, the bias electrode formed on each substrate may control the characteristics of the plasma, and the physical and chemical films to be deposited may be controlled.

This can increase the reliability of the experiment because the experiment can be carried out in a variety of conditions in the same environment.

In addition, various changes in important parameters in the atomic layer deposition method can increase the flexibility of process research.

In addition, since the process temperature of the deposition sample of each substrate can be controlled by a heater disposed below each substrate separately from the temperature of the processing chamber, there is a limit to a low driving temperature range such as insulation of the entire deposition apparatus and O-ring. It can reduce the cost of system construction to overcome the problem. In addition, since portions adjacent to the plurality of block portions of the deposition apparatus are coated, thermal conduction between the block portions may be prevented.

In addition, since the plurality of block portions of the deposition apparatus are configured to be assembled in a block form, the process conditions may be diversified at any time.

 In addition, the plurality of block portions of the deposition apparatus is a modular device that is configured to be assembled in a block form, by attaching to the user's existing atomic layer deposition system by varying the process conditions at any time economically without modifying the overall system design Can be angry.

1 is a view showing a deposition apparatus according to an embodiment of the present invention.
2A to 2C are diagrams for describing components of a deposition apparatus according to an embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

In the present specification, the term 'unit' includes a unit realized by hardware, a unit realized by software, and a unit realized by both. In addition, one unit may be realized using two or more pieces of hardware, and two or more units may be realized by one piece of hardware.

Some of the operations or functions described as being performed by a terminal or a device in the present specification may instead be performed in a server connected to the terminal or device. Similarly, some of the operations or functions described as being performed by the server may be performed by a terminal or a device connected to the server.

Hereinafter, with reference to the accompanying configuration diagram or processing flow chart, it will be described in detail for the practice of the present invention.

1 to 2C, a deposition apparatus 10 using atomic layer deposition according to the present invention will be described.

The deposition apparatus 10 may include a processing chamber (not shown), a plurality of block units 100, a mount body 110, a controller 200, and a DC power supply unit 202.

The mount body 110 may mount a plurality of block portions 100 and may be installed in a processing chamber (not shown). Here, the processing chamber (not shown) may have a high vacuum internal reaction space to coat the deposited sample by chemical vapor deposition such as atomic layer deposition (ALD).

The mount main body 110 may have a plurality of groove portions corresponding to the shape of each block portion 100 so as to mount the plurality of block portions 100. For example, when the plurality of block portions 100 have a circular shape, the mount main body 110 may have a plurality of cylindrical groove portions to mount the plurality of block portions 100. Alternatively, when the plurality of block portions 100 have a rectangular shape, the mount main body 110 may have a plurality of groove portions having a rectangular parallelepiped shape.

Through this, each block portion 100 may be seated in each groove portion formed in the mount body 110, and the experimenter may block the block portion (as much as the number of the desired block portion 100 according to the deposition experiment) into the groove portion of the mount body 110. 100) can be seated. By the above configuration, the present invention can provide the flexibility of the experiment because it can use as many blocks as required according to different test groups.

Each of the plurality of block portions 100 is configured to be assembled in a block form by being seated in each groove portion of the mount body 110.

Each block portion 100 may include a substrate 206, a heater 208 and a cover 204. Here, the substrate 206 is a member for depositing a deposition sample, for example, a liquid crystal display, a plasma display panel, an organic light emitting diodes substrate processing surface. Any object may be possible as long as it is a member capable of forming a thin film by evaporation of the deposited sample.

A bias electrode (not shown) may be formed in the substrate 206 by applying a bias voltage to the substrate 206 through the holder 210 by the DC power supply 202. In this case, the bias electrode (not shown) is electrically connected to the holder 210. Here, the holder 210 is included in each block portion 100 and may support the substrate 206, the heater 208, and the cover 206. The holder 210 may include a hole 212 formed under the heater 208. The hole part 212 is formed to supply the power adjusted by the control unit 200 connected to the heater 208 to the heater 208 corresponding to each substrate 206.

The heater 208 is disposed under the substrate 206 and can provide a predetermined process temperature to heat the deposited sample deposited on the substrate 206. In addition, the heater 208 may adjust the temperature of the deposited sample deposited on each substrate 206. For example, each heater 208 may adjust the temperature of the deposited sample deposited on each substrate 206 based on the temperature value set for each heater 208.

The heater 208 may be composed of aluminum nitride that is electrically insulated from the plasma properties (resistant).

Cover 204 may be disposed on top of substrate 206 and hold the deposited sample.

Here, the holder 210 and the cover 204 may be formed of, for example, coated with a material of stainless steel having low thermal conductivity.

The controller 200 may be connected to each heater 208 to control the temperature of the deposited sample. In addition, the controller 200 may individually control the bias electrodes formed on the substrates. Specifically, the control unit 200 may independently adjust the temperature of the deposition sample deposited on each substrate 206 of the plurality of block units 100 and the bias electrode formed on each substrate 206. For example, the controller 200 may independently control power, power, and heat generated to be applied to each heater 208 corresponding to each substrate 206.

The DC power supply unit 202 may provide a bias voltage to each of the substrates 206 of the plurality of block units 100. In this case, the DC power supply unit 202 may individually adjust and control the bias voltage with respect to a bias electrode (not shown) formed in each substrate 206. For example, the DC power supply 202 may adjust the bias voltage based on the structure of the substrate 206.

The mount body 110 is coated with a portion adjacent to the plurality of block portions 100 to prevent heat conduction between the plurality of block portions 100. For example, the mount body 110 may be coated with zirconia ceramic having high thermal durability while preventing heat conduction. When zirconia ceramic is coated on a portion adjacent to the plurality of block portions 110, each of the block portions 110 may be electrically insulated and may be blocked from being electrically connected to a processing chamber (not shown).

The first hole 120 and the second hole 130 are formed in the lower surface of each groove part formed in the mount main body 110 to correspond to each block part 100. Specifically, the lower surface of each groove formed in the mount body 110, the first hole 120 for connecting to supply the bias voltage to the substrate of each block portion 100 and the connection for supplying power to the heater 208 The second hole 130 is formed. The controller 200 may transfer power to control the temperature of the deposited sample to each heater 208 through the second hole 130. The DC power supply unit 202 may apply a bias voltage to form a bias electrode (not shown) in each substrate 206 through the first hole 120.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. .

10: deposition apparatus
100: block portion
110: mount body
120: first hole
130: second hall
200: control unit
202: DC power supply
204: cover
206: substrate
208: heater
210: holder
212: hole

Claims (5)

In the vapor deposition apparatus which deposits an atomic layer,
Processing chamber and
An interior of the processing chamber to include a substrate for depositing a deposited sample, a heater disposed under the substrate and controlling a temperature of the deposited sample deposited on the substrate, and a cover disposed over the substrate and fixing the deposited sample Block part installed in
Including,
And a plurality of block portions, wherein the plurality of block portions are configured such that each block portion can be assembled in a block form.
The method of claim 1,
A control unit connected to the heater to control the temperature of the deposited sample
More,
And the control unit independently adjusts the temperature of the deposition sample deposited on each substrate of the plurality of block portions and the bias electrode formed on each substrate.
The method of claim 1,
Each block portion further includes a holder for supporting the substrate, the heater and the cover,
The holder comprises a hole formed in the lower portion of the heater.
The method of claim 3, wherein
And the hole portion is formed to supply power to heaters corresponding to each of the substrates.
The method of claim 1,
The deposition apparatus further includes a mount body for mounting the plurality of block portions,
The mounting body is coated with a portion adjacent to the plurality of block portions to prevent heat conduction between the plurality of block portions.

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