KR20200133428A - Chemical vapor deposition system - Google Patents

Abstract

The present invention relates to a chemical vapor deposition system which facilitates sample loading. According to an embodiment of the present invention, the chemical vapor deposition system comprises: a chemical vapor deposition apparatus including a reaction chamber to provide a reaction space to accommodate a target and a sample holder to control the position of the target in the reaction chamber; and a holder for an apparatus to fix and support the chemical vapor deposition apparatus, and rotate the chemical vapor deposition apparatus to align the reaction chamber in a first direction perpendicular to a ground surface or a second direction parallel with the ground surface. The sample holder includes a first end and a second end. The first end of the sample holder is fixed on one end of the reaction chamber, and the second end of the sample holder can fix the target to be parallel with the flow direction of gas to be supplied into the reaction chamber in the first direction and the second direction.

Description

Chemical vapor deposition system

The present invention relates to semiconductor technology, and more particularly, to a chemical vapor deposition system.

Recently, the technical application range of two-dimensional materials having various electrical and optical properties has been expanded, and the possibility of commercialization is increasing. The two-dimensional material refers to a material in which atoms form a crystal structure in a plane with a single atomic layer thickness (about 1 nm). These two-dimensional materials can be classified into conductors, semiconductors, and non-conductors according to their electrical properties. Typically, graphene with conductor properties, transition metal chalcogen compounds and black phosphorus having semiconductor properties, and hexagonal boron nitride having non-conducting properties There is. The transition metal chalcogen compound is a compound having a two-dimensional layered structure consisting of a transition metal and a chalcogen element.

In order to apply the two-dimensional material to various industrial fields, a high-quality large-area material manufacturing method is required. In general, as a method for synthesizing the two-dimensional material, chemical vapor deposition (CVD) is widely used. The chemical vapor deposition method includes a reaction chamber for growing a two-dimensional material through a chemical reaction between the precursor and the substrate surface after supplying one or more vapor phase precursors to a substrate by supplying a stable gas at high temperature and low pressure ( Hereinafter, it is performed through a chemical vapor deposition apparatus).

The chemical vapor deposition apparatus is classified into a horizontal type CVD apparatus including a horizontal reaction chamber through which gas flows horizontally and a vertical type CVD apparatus including a vertical reaction chamber through which gas flows vertically. In the horizontal CVD apparatus, sample loading is easy, but when the diameter of the reaction chamber is large, the flow of gas is influenced by gravity, and the synthetic material may grow unevenly. On the other hand, the vertical type CVD apparatus can grow the synthetic material uniformly by supplying a uniform gas flow regardless of the diameter of the reaction chamber, but the sample loading is more complicated than the horizontal type CVD apparatus due to space constraints. And it can be difficult.

Accordingly, there is a need to develop a chemical vapor deposition apparatus having advantages of easy sample loading of the horizontal CVD apparatus and uniform synthesis of a large area of the vertical CVD apparatus.

Therefore, the technical problem to be solved by the present invention is that it is easy to load a sample, a sample holder can be replaced, a two-dimensional material can be synthesized under control of various environmental factors, and a uniform two-dimensional material is produced over a large area. It is to provide a chemical vapor deposition system for synthesis.

In addition, another technical problem to be solved by the present invention is to provide a cradle for a chemical vapor deposition apparatus having the above-described advantages.

According to an embodiment of the present invention, a chemical vapor deposition apparatus including a reaction chamber providing a reaction space in which an object to be processed is accommodated, and a sample holder for controlling a position of the object to be processed in the reaction chamber; And a holder for fixing and supporting the chemical vapor deposition apparatus and rotating the chemical vapor deposition apparatus so that the reaction chamber is aligned in a first direction perpendicular to the ground or a second direction horizontal to the ground, The sample holder includes a first end and a second end, the first end of the sample holder is fixed to one end of the reaction chamber, and the second end of the sample holder has the first direction and the second end. A chemical vapor deposition system may be provided for fixing the object to be processed in a direction parallel to a flow direction of a gas to be supplied into the reaction chamber.

In one embodiment, the sample holder includes an extension member fastened to one end of the reaction chamber, a loading portion including an end portion detachable from the extension member and a free portion facing the end portion, and the loading portion It may include at least one or more fastening grooves coupled along a partial circumference of the object to be processed.

In an embodiment, the device cradle includes a first table including a fixing member for fixing the chemical vapor deposition device; A second table including a power transmission member for transmitting power for converting the first table from the first direction to the second direction or from the second direction to the first direction; And providing a horizontal rotation shaft so that the first table is aligned in the first direction or the second direction by connecting the horizontal lower end of the first table and the horizontal upper end of the second table, and power transmitted from the power transmission member It may include at least one rotation conversion member for rotating the horizontal rotation axis according to. The device cradle may further include a vertical damper including one end fixed to the horizontal upper end of the second table and the other end selectively contacting the horizontal lower end of the first table by rotation of the horizontal rotation axis. have. The device cradle may further include a horizontal damper including one end fixed to the vertical end of the second table and the other end selectively contacting the horizontal lower end of the first table by rotation of the horizontal rotation axis. .

In one embodiment, the rotation switching member includes a first lower vertical plate including a first lower end fixed to the second table, a first upper end facing the first lower end, and a first hinge ball; A second lower vertical plate disposed spaced apart from the first lower vertical plate at a predetermined interval, and including a second lower end fixed to the second table, a second upper end facing the second lower end, and a second hinge ball; A third lower end coupled between the first upper end of the first lower vertical plate and the second upper end of the second lower vertical plate, a third upper end facing the third lower end and fixed to the first table, and a third hinge An upper vertical plate containing a ball; It may include a hinge member passing through the first hinge ball, the second hinge ball, and the third hinge ball to provide a rotation axis.

In one embodiment, the upper vertical plate further includes a horizontal fixing groove and a vertical fixing groove, the first lower vertical plate further comprises a first horizontal fixing hole and a first vertical fixing hole, and the second lower vertical plate The plate further includes a second horizontal fixing hole and a second vertical fixing hole, and the rotation switching member is mounted through the first horizontal fixing hole, the horizontal fixing groove, and the second horizontal fixing hole in a longitudinal direction, The first vertical fixing hole, the vertical fixing groove and the second vertical fixing hole may further include a stabilizer pin mounted through the longitudinal direction.

In one embodiment, the power transmission member includes a hydraulic cylinder including a piston and a piston rod that is contracted or expanded by the piston, a pneumatic cylinder, or a combination thereof, and the first table is the first table in the second direction. The piston rod is rotated and contracted so as to be aligned in one direction, the horizontal axis of rotation is rotated by 90 degrees counterclockwise, and the first table is aligned in the second direction from the first direction, so that the piston rod is rotated. By expanding, the horizontal axis of rotation may be rotated by 90° in a clockwise direction. The power transmission member may include an extension part that is fixed to the first table 210 and is hingedly connected to the piston rod and rotatable. The extension has a longitudinal direction perpendicular to the ground.

In one embodiment, the chemical vapor deposition apparatus further comprises at least one or more of a reaction energy supply unit for synthesizing the object to be processed and a plasma generator for surface modification of the object to be processed, and the reaction energy supply unit or the plasma generator The reaction energy supplier or the plasma generator may be coupled to the reaction tube to be movable in the longitudinal direction of the reaction chamber so that any one of them may be selectively adjacent to the reaction space to perform a process on the object to be processed. have.

In one embodiment, the plasma generator may include a first electrode and a second electrode coupled to an outer wall of the reaction tube to generate a potential difference in the reaction tube. The reaction energy supply may include a support having a through hole through which the reaction tube passes; And a heating member coupled to the support and capable of supplying thermal energy or light energy into the reaction space. A first closing member coupled with a first end of the reaction chamber; And a second closing member facing the first closing member and coupled to the second end of the reaction chamber.

In one embodiment, the object to be treated includes a two-dimensional material, and the two-dimensional material is graphene, hexagonal boron nitride, silicanes, black phosphorus, and borophine. ), a transition metal chalcogen material, oxide, or a combination thereof.

According to another embodiment, a chemical vapor deposition apparatus including a reaction chamber providing a reaction space in which the object to be processed is provided and a sample holder for controlling a position of the object to be processed in the reaction chamber is fixed and supported, and the reaction chamber A cradle for a device for rotating the chemical vapor deposition device so that it is aligned in a first direction perpendicular to the ground or in a second direction horizontal to the ground, wherein the cradle for the device includes a fixing member for fixing the chemical vapor deposition device. A first table; A second table including a power transmission member for transmitting power for converting the first table from the first direction to the second direction or from the second direction to the first direction; And connecting the first horizontal end of the first table and the first horizontal end of the second table to provide a horizontal rotation shaft so that the first table is aligned in the first direction or the second direction, and the power transmission member It may include at least one rotation conversion member for rotating the horizontal rotation shaft according to the power transmitted from the.

According to an embodiment of the present invention, sample loading is facilitated by utilizing a holder for an apparatus for rotating a chemical vapor deposition apparatus and a sample holder for fixing the object to be processed parallel to the flow direction of the reaction gas to be supplied into the reaction chamber, A sample holder can be replaced, a two-dimensional material can be synthesized under the control of various environmental factors, and a chemical vapor deposition system for synthesizing a uniform two-dimensional material over a large area can be provided.

In addition, by minimizing pollutants between two process movements, not only does not deteriorate the properties of the material and improves the yield, but also simplifies the complex semiconductor process, lowers the process temperature, and minimizes the delay in process time. It is possible to provide a chemical vapor deposition system that performs material synthesis and surface modification.

1A and 1B are block diagrams of a chemical vapor deposition system according to an embodiment of the present invention.
2A and 2B are perspective views of a chemical vapor deposition system according to an embodiment of the present invention.
3A and 3B are enlarged views of a rotation conversion member for rotating a chemical vapor deposition apparatus according to an embodiment of the present invention.
4A is a plan view of a sample holder according to an embodiment of the present invention, and FIG. 4B is a side view of a sample holder according to an embodiment of the present invention.
5 is a perspective view of a sample holder mounting a sample substrate according to an embodiment of the present invention.
6A is a plan view of a sample holder according to another embodiment of the present invention, and FIG. 6B is a side view of a sample holder according to another embodiment of the present invention.
7 is a perspective view of a sample holder mounting a sample substrate according to another embodiment of the present invention.
8A and 8B are views illustrating an example of disposing a plurality of sample substrates according to an exemplary embodiment of the present invention.
9A and 9B are views illustrating an example of disposing a plurality of sample substrates according to another exemplary embodiment of the present invention.
10A and 10B are views for explaining a reaction energy supply and a plasma generator of a chemical vapor deposition apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided to more completely describe the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows. It is not limited to the examples. Rather, these embodiments are provided to make the present disclosure more faithful and complete, and to completely convey the spirit of the present invention to those skilled in the art.

In the drawings, the same reference numerals refer to the same elements. Also, as used herein, the term “and/or” includes any and all combinations of one or more of the corresponding listed items.

The terms used in this specification are used to describe examples, and are not intended to limit the scope of the present invention. In addition, even if it is described in the singular in this specification, a plurality of forms may be included unless the context clearly indicates the singular. In addition, the terms "comprise" and/or "comprising" as used herein specify the presence of the mentioned shapes, numbers, steps, actions, members, elements and/or groups thereof. It does not exclude the presence or addition of other shapes, numbers, movements, members, elements and/or groups.

Reference to a layer formed “on” a substrate or other layer herein refers to a layer formed directly on the substrate or other layer, or formed on an intermediate layer or intermediate layers formed on the substrate or other layer. It may also refer to a layer. Further, for those skilled in the art, a structure or shape arranged “adjacent” to another shape may have a portion disposed below or overlapping with the adjacent shape.

In this specification, "below", "above", "upper", "lower", "horizontal" or "vertical" Relative terms such as, as shown on the drawings, may be used to describe the relationship between one component member, layer, or region with another component member, layer, or region. It is to be understood that these terms encompass not only the orientation indicated in the figures, but also other orientations of the device. In addition, in the present specification, “two-dimensional material” as used refers to all materials having a two-dimensional structure in which several atomic arrangements form a layer and these layers are arranged in at least one layer.

In the following, embodiments of the present invention will be described with reference to cross-sectional views schematically showing ideal embodiments (and intermediate structures) of the present invention. In these drawings, for example, the size and shape of the members may be exaggerated for convenience and clarity of description, and in actual implementation, variations of the illustrated shape may be expected. Accordingly, the embodiments of the present invention should not be construed as being limited to the specific shape of the region shown in this specification. In addition, reference numerals of members in the drawings refer to the same members throughout the drawings.

1A and 1B are a block diagram of a chemical vapor deposition system 10 according to an embodiment of the present invention, and FIGS. 2A and 2B are perspective views of a chemical vapor deposition system 10 according to an embodiment of the present invention. 3A and 3B are enlarged views of the rotation conversion member 230 for rotating the chemical vapor deposition apparatus according to an embodiment of the present invention.

1A, 1B, 2A, and 2B, the chemical vapor deposition system 10 may include a chemical vapor deposition apparatus 100 and a cradle 200 for the apparatus. The chemical vapor deposition apparatus 100 includes a reaction chamber 150 providing a reaction space in which the object PE is accommodated, and a sample holder 400 for controlling the position of the object PE in the reaction chamber 150. Can include. The device cradle 200 fixes and supports the chemical vapor deposition apparatus 100, and the reaction chamber 150 is in a first direction (vertical direction, Z direction) perpendicular to the ground (horizontal direction, X direction) or the ground. The chemical vapor deposition apparatus 100 may be rotated so as to be aligned in a second direction (horizontal direction, X direction) horizontal to and horizontal.

The sample holder 400 is fixed to one end of the reaction chamber 150 and holds the object PE to be parallel to the flow direction of the gas to be supplied into the reaction chamber 150 in the first direction and the second direction. It can be fixed and supported. In the reaction chamber 150 in the horizontal direction in FIG. 1A and the reaction chamber 150 in the vertical direction in FIG. 2A, the object PE is disposed in parallel with the gas injection direction GF through the sample holder 400, Two-dimensional materials can be uniformly synthesized over a large area. For a detailed description of the sample holder 400, refer to FIGS. 4A to 4B and 5.

In another embodiment, in the reaction chamber 150 in the horizontal direction in FIG. 1A and the reaction chamber 150 in the vertical direction in FIG. 2A, the object PE passes through the sample holder 400 to the gas injection direction GF It can be placed vertically. For a detailed description of the sample holder 400, refer to FIGS. 6A to 6B and 7.

In one embodiment, the device cradle 200 includes a first table 210 including a fixing member (not shown) that fixes the chemical vapor deposition apparatus 100 and the first table 210 in the first direction. Power transmission that transmits power to switch from (vertical direction, Z direction) to the second direction (horizontal direction, X direction) or from the second direction (horizontal direction) to the first direction (vertical direction) The second table 220 including the member (PTU) and the horizontal lower end (D1) of the first table (210) and the horizontal upper end (U2) of the second table (220) are connected so that the first table (210) is At least one rotation conversion member that provides a horizontal rotation shaft to be aligned in the first direction (vertical direction) or the second direction (horizontal direction), and rotates the horizontal rotation shaft according to the power transmitted from the power transmission member (PTU) ( 230) may be included.

In one embodiment, the device cradle 100 has one end 242 fixed to the horizontal upper end U2 of the second table 220 and the horizontal lower end of the first table 210 by rotation of the horizontal rotation axis. At least one vertical damper 240 including the other end 241 selectively contacting D1) may be further included. In addition, the device holder 200 selectively contacts the first end 247 fixed to the vertical end of the second table 220 and the horizontal lower end D1 of the first table 210 by rotation of the horizontal rotation axis. At least one horizontal damper 245 including the other end 246 may be further included.

The vertical damper 240 absorbs the shock transmitted from the first table 210 that is switched from the vertical direction to the horizontal direction, and the first table 210 together with the rotation switching member 230 to maintain the horizontal direction. Table 210 may be supported. In addition, the vertical dampers 240 may be spaced apart from each other in the first direction and in a third direction perpendicular to the second direction. The horizontal damper 245 absorbs the shock transmitted from the first table 210 that is switched from the horizontal direction to the vertical direction, and the first table 210 together with the rotation switching member 230 to maintain the vertical direction. Table 210 may be supported. In addition, the horizontal dampers 245 may be spaced apart from each other in the third direction.

3A and 3B, the rotation conversion member 230 includes a first lower end DD fixed to the second table 220, a first upper end UU facing the first lower DD, and a first The first lower vertical plate 232 including the hinge hole 235, the second lower part DD and the second lower part disposed at a predetermined distance from the first lower vertical plate 232 and fixed to the second table 220 A second lower vertical plate 232' including a second upper end UU and a second hinge hole 235' facing (DD), and a first upper end UU of the first lower vertical plate 232 A third lower end that couples between the second upper end (UU) of the second lower vertical plate 232', a third upper end that faces the third lower end and is fixed to the first table 210, and a third hinge ball 235 ) And a hinge member 237 providing a rotation axis through the upper vertical plate 231 and the first hinge ball 235, the second hinge ball 235, and the third hinge ball 235. have.

In one embodiment, the upper vertical plate 231 further includes a horizontal fixing groove (H) and a vertical fixing hole (V), and the first lower vertical plate 232 is a first horizontal fixing hole 233 and a first The vertical fixing hole 234 may be further included, and the second lower vertical plate 232 ′ may further include a second horizontal fixing hole 233 ′ and a second vertical fixing hole 234 ′.

The rotation conversion member 230 includes a first horizontal fixing hole 233 of the first lower vertical plate 232, a horizontal fixing groove H, and a second horizontal fixing hole 233 ′ of the second lower vertical plate 232 ′. ) Is mounted through the longitudinal direction, and may further include a stabilizer pin 236 that prevents the horizontal chemical vapor deposition apparatus 100 from being rotated in the vertical direction. Also, as shown in Figure 3b. The stabilizing pin 236 is optionally a first vertical fixing hole 234 of the first lower vertical plate 232, a vertical fixing groove V, and a second vertical fixing hole 234 of the second lower vertical plate 232'. When mounted through') in the longitudinal direction, it is possible to prevent the vertical chemical vapor deposition apparatus 100 from rotating in the horizontal direction.

In an embodiment, as shown in FIGS. 1A and 2A, when the chemical vapor deposition apparatus 100 is maintained in a horizontal direction, a first horizontal fixing hole 233 of the first lower vertical plate 232 and a horizontal fixing groove ( H) And the second horizontal fixing hole 233 ′ of the second lower vertical plate 232 ′ forms the through hole of the safety pin 236 in the longitudinal direction, but as in FIG. 3A, the upper vertical plate 231 The vertical fixing groove (V) of the first vertical fixing hole 234 of the first lower vertical plate 232 and the direction of the second vertical fixing hole 234 ′ of the second lower vertical plate 232 ′ and A through hole into which the safety pin 236 can be mounted is not formed. On the other hand, as shown in FIGS. 1B and 2B, when the chemical vapor deposition apparatus 100 is maintained in a vertical direction, the first vertical fixing hole 234 of the first lower vertical plate 232, the vertical fixing groove V, and The second vertical fixing hole 234 ′ of the second lower vertical plate 232 ′ forms the through hole of the safety pin 236 in the longitudinal direction, but as in FIG. 3B, the upper vertical plate 231 is horizontally fixed. Since the groove H is inconsistent with the direction of the first horizontal fixing hole 233 of the first lower vertical plate 232 and the second horizontal fixing hole 233 ′ of the second lower vertical plate 232 ′, the safety pin ( 236) is not formed in the through hole to be mounted.

In one embodiment, the power transmission member (PTU) is a hydraulic cylinder including a cylinder (CI), a piston (P) disposed in the cylinder (CI), and a piston rod (PL) contracted or expanded by the piston (P), Pneumatic cylinders or combinations thereof. The piston rod PL is rotated and contracted so that the first table 210 is aligned in the first direction (vertical direction) in the second direction (horizontal direction), so that the horizontal rotation shaft X is 90 counterclockwise. ˚ is rotated, and the piston rod PL is rotated and expanded so that the first table 210 is aligned in the first direction (vertical direction) to the second direction (horizontal direction), and the horizontal rotation axis X is clockwise. It can be rotated 90˚ in the direction. Specifically. As the piston rod PL contracts, the power transmission member PTU rotates in the direction of the arrow AD1, so that the left end of the first table 210 receives the force F1 in the vertical downward direction, and the first table ( 210) may be rotated in the first direction (vertical direction) in the second direction (horizontal direction). On the other hand, as the piston rod PL expands and the power transmission member PTU rotates in the arrow direction AD2, the left end of the first table 210 receives a force in the vertical upward direction, and the first table 210 ) May be rotated from the first direction (vertical direction) to the second direction (horizontal direction).

In one embodiment, the power transmission member PTU is fixed to the lower end of the first table 210 and may further include an extension CL that is hingedly connected to the one end of the piston rod PL and is rotatable. The extension CL has a longitudinal direction perpendicular to the ground and can be rotated with the piston rod PL, so that the first table 210 rotates from the second direction (horizontal direction) to the first direction (vertical direction). Or when the first table 210 is rotated from the first direction (vertical direction) to the second direction (vertical direction), the first table 210 can be rotated with a constant power without rotation deviation. Therefore, vibration that may be generated by the rotation of the first table 210 may be improved. In addition, when there is an extension part CL in the vertical direction, the first table 210 may be rotated with less power than when the vertical extension part CL is not used. In another embodiment, the vertical extension part CL may be some constituent elements constituting the first table 210.

In one embodiment, the chemical vapor deposition apparatus 100 may further include a reaction energy supply 110 for synthesizing the object PE supported by the sample holder 400 in the reaction chamber 150. Optionally, the chemical vapor deposition apparatus 100 may further include a plasma generator 120 that performs surface modification of the object PE synthesized by the reaction energy supply 110. For example, when graphene is grown through the reaction energy supply 110, when carbon is generated at a low temperature by helping decomposition of methane gas, the growth temperature of graphene can be lowered, and oxygen radicals can be reduced through the plasma generator 120. It is generated during the synthesis of graphene, and properties such as the number of graphene layers and the size of crystal grains can be controlled.

In one embodiment, the reaction chamber 150 may extend in a longitudinal direction and provide a reaction space in which the object PE is accommodated. Further, the reaction chamber 150 may be cylindrical or rectangular, but the shape of the reaction chamber 150 in the present invention is not limited thereto. The reactive energy supply 110 or the plasma generator 120 may be provided so that any one of the reactive energy supply 110 and the plasma generator 120 may be selectively adjacent to the reaction space to perform a process on the object to be processed (PE). 1 It may be coupled to the reaction chamber 150 so as to be movable in the longitudinal direction of the reaction chamber 150 through a rail (not shown) fixed to the top of the table 110.

In one embodiment of the present invention, the object to be processed PE is a two-dimensional material having a structure in which atoms are arranged in a single layer, and has a thickness of several nanometers or less, so it is highly applicable to a flexible and transparent device. Here, the two-dimensional material refers to a van der Waals material or layered material in which layers consisting of one or several layers of atoms are laminated by a weak bond of van der Waals. For example, Van der Waals materials are graphene, hexagonal boron nitride, oxide, transition metal chalcogenide, e.g. MoS2, WS2, MoSe2, WSe2, ReS2, ReSe2 , MoTe2, WTe2, ZrS2, ZrSe2, NbS2, NbSe2, GaSe, GaTe, InSe, Bi2Se3), black phosphorus, silicine, and borophene, or any one or a combination thereof. . The technology for synthesizing these two-dimensional materials is the most essential factor for industrialization of two-dimensional materials. In particular, through the synthesis of a two-dimensional material having various properties, the property change and growth of the two-dimensional material can be simultaneously achieved. In addition, it is possible to control the properties of the 2D material by changing the surface properties of the 2D material. By controlling the properties of the two-dimensional material in various ways, a two-dimensional material suitable for a required use can be made. However, in the present invention, the object PE is not limited to a two-dimensional material.

The reaction chamber 150 may include any one of glass, quartz, stainless steel, alumina, sapphire, and ceramic. In one embodiment, the reaction chamber 150 may be formed of a dielectric through which high frequency can be transmitted. When the reaction chamber 150 selects a material through which ultraviolet rays can be directly transmitted, such as quartz, ultraviolet rays are directly supplied to the object PE, thereby having a sterilizing effect. However, in the present invention, the material of the reaction chamber 150 is not limited to these, and in some cases, synthetic resins such as polycarbonate and polyethylene, which are widely used as electric parts due to good electrical insulation, may be used. In addition, a glass laminate filled with epoxy may be used. The surface modification may be at least one of layer-by-layer etching, doping, defect generation, surface cleaning, and control of hydrophilicity.

The reaction energy supply 110 is a target object by using any one of a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method, and a physical vapor deposition (PVD) method. (PE) can be synthesized. The CVD method includes atmospheric pressure CVD (APCVD), low pressure chemical vapor deposition (Low Pressure CVD, LPCVD), plasma enhanced CVD (PECVD), and metal-organic vapor deposition (MOCVD). Any one may be used, and the PVD method may use any one of Thermal evaporation deposition, sputtering deposition, and ion-beam assisted deposition. However, the present invention is not limited to these methods.

In one embodiment, the chemical vapor deposition system 100 faces the first finishing member 130 and the first finishing member 130 coupled with the first end of the reaction chamber 150, and It may further include a second closing member 140 coupled to the second end. In addition, the second closing member 140 is coupled to the gas supply unit (not shown) for injecting the process gas into the reaction chamber 150 and the first closing member 130 to the outside of the reaction chamber 150 It may further include an exhaust unit (not shown) for discharging the gas. The first closing member 130 is supported by the first fixing portion 135L, and the second closing member 140 is supported by the second fixing portion 135R, thereby horizontally leveling the reaction chamber 150 in the longitudinal direction. Or it can be held in a vertical direction.

In one embodiment, the chemical vapor deposition apparatus 100 supplies a control signal or power to the plasma generator 120, and a plasma process gas is supplied to the inside of the reaction chamber 150 or the plasma process gas is supplied to the outside of the reaction tube. A plasma controller (not shown) for controlling the gas supply unit or/and the exhaust unit to discharge the gas may be further included.

In addition, the chemical vapor deposition apparatus 100 supplies a control signal or power to the reaction energy supply 110, controls the movement of the reaction energy supply 110, and supplies a reaction process gas into the reaction chamber 150 A reaction controller (not shown) for controlling the gas supply unit or/and the exhaust unit to discharge the reaction process gas to the outside of the reaction chamber 150 may be further included.

The reaction controller and the plasma controller may be implemented as one control module 300 and may be disposed and fixed in the inner space of the second table 300. The control module 300 is a module that controls the overall chemical vapor deposition apparatus 100 and may be implemented as at least one processor chip, software, or an assembly thereof. For example, the control module may include a reaction energy supply unit 110, a plasma generator 120, the gas supply unit or the gas supply unit so that the synthesis and surface modification of the object PE disposed in the reaction space of the reaction chamber 150 can be performed. / And at least one of the exhaust unit may be controlled. In addition, the reaction controller or the plasma controller may further include an input module, an output module, and a power supply module.

The control module 300 receives information on the type of plasma treatment selected by the input module to be described later or/and input parameters for the selected plasma treatment (eg, gas type/flow rate, frequency, power, time) from the input module. Receive, and determine the input parameter for the selected plasma treatment.

In addition, the control module 300 may control a power supply module (not shown) so that power having a frequency corresponding to the selected plasma treatment can be supplied to the plasma generator 120. The control module may control the gas flow rate corresponding to the selected plasma treatment to be supplied from the outside to the reaction chamber 150. The control module may control the plasma generator 120 to form plasma for a predetermined time according to the selected plasma treatment. The power supply module may supply power corresponding to the selected plasma treatment to the plasma generator 120 under the control of the control module.

In the reaction chamber 150, an object to be processed is disposed therein, and power corresponding to the selected plasma treatment supplied from the power supply module and a process gas introduced according to the control of the control module (eg, reaction gas or plasma treatment) are performed. Gas), a chemical reaction or plasma may be generated for a predetermined period of time, thereby changing characteristics of the object PE. The plasma treatment PE may be performed by at least one of a physical reaction mechanism by ionic species generated in a plasma state and a chemical reaction mechanism by neutral species generated in a plasma state.

The input module may generate input data for controlling the operation of the chemical vapor deposition system 100 and provide it to the control module. The input module includes a key pad, a keyboard, a mechanical or electromechanical switch (e.g., a switch gear, a pressure switch, a push button switch, a dome switch), a touch pad (static pressure/power failure), a touch panel, a jog wheel, It may be composed of a jog switch, a voice recognition device, or a combination thereof. However, the configuration of the input module 40 in the present invention is not limited to these.

For example, when any one of a plurality of plasma processes related to a characteristic change of the object to be processed is selected by a user interface or a user input (or manipulation), the input module displays information on an input parameter related to the selected plasma process. It can be provided as a control module. The selected plasma treatment may be one of layer-by-layer etching, doping, defect generation, surface cleaning, and control of hydrophilicity, and the input The parameter may include at least one of gas type/flow rate, frequency, power, and time for the selected plasma treatment.

In some embodiments, the input parameter value may be changed not only according to the type of plasma treatment but also the type of object to be processed for changing characteristics. For example, when plasma etching is performed on graphene, input parameters (e.g., gas type/flow rate, frequency, power, and time) and when plasma etching is performed on a transition metal chalcogen are set differently. Can be.

The output module may receive output data for operation control from the control module and process it. The output module may be composed of a display device such as an LCD (Liquid Crystal Display) display, a speaker, an LED indicator, or a combination thereof. However, the configuration of the output module in the present invention is not limited to these. In some embodiments, the input module and the output module may be integrated into one display device. For example, when a touch input is generated in the display device, an output result corresponding to the touch input may be displayed.

In one embodiment, at least one of the reactive energy supply 110, the plasma generator 120, the first finishing member 130 and the second finishing member 140 disposed on the first table 210 is a guide such as a rail In combination with the member, it may be movable. For example, it is possible to move left and right in the horizontal direction and vertically move in the vertical direction.

In the chemical vapor deposition system 10, processes such as short-distance deposition and MOCVD (Metal Organic Chemical Vapor Deposition) are applicable. The short-distance deposition uses two types of substrates (a source substrate on which a raw material is applied and a target substrate on which a semiconductor is grown). Transition metals such as Mo and W, which are raw materials, are deposited on the substrate with a sputter/evaporator to use as a source of a thin metal film, and the top of the target substrate is positioned toward the source substrate. This is a method of synthesizing a two-dimensional semiconductor by heating the furnace by flowing an inert gas and flowing reaction gases (such as O2 and H2S) when the target temperature is reached. The MOCVD is a method of forming a thin film on a substrate by reacting an organometallic raw material such as Mo(CO)6 and W(CO)6 and a chalcogen raw material in a gaseous state. The organic metal raw material is heated and vaporized, and then supplied into the reaction chamber to perform the process. A system (eg, a bubbler) capable of heating and controlling/supplying an organometallic raw material is additionally mounted to the chemical vapor deposition system of the present invention to form a two-dimensional semiconductor thin film on a large area substrate.

In one embodiment, looking at the operation for synthesizing a 2D material using the chemical vapor deposition system 10, first, the reaction chamber 150 is aligned in a horizontal direction, and then the source substrate and the sample holder 400 are used. After loading the target substrate and loading the sample, the reaction chamber 150 in a horizontal state is rotated in a vertical direction using a power transmission member (PTU) such as a hydraulic cylinder, thereby synthesizing a two-dimensional material. In addition, the sample holder 400 is designed to support the substrate parallel to the injection direction of the gas, so that the gas can be uniformly spread over the sample substrate.

Therefore, it is easy to load the sample inside the reaction chamber 150 in a horizontal state, it is possible to easily replace the sample holder, it is possible to synthesize two-dimensional materials under the control of various environmental factors, and uniform two-dimensional material over a large area. Materials can be synthesized.

4A is a plan view of a sample holder according to an embodiment of the present invention, FIG. 4B is a side view of a sample holder according to an embodiment of the present invention, and FIG. 5 is an object PE according to an embodiment of the present invention. It is a perspective view of the sample holder 400 to mount.

4A, 4B, and 5, in one embodiment, the sample holder 400 includes an extension member 410 that is fastened to one end of the reaction chamber 150, and one end that is detachable from the extension member 410. It may include a loading unit 420 including a portion and the other end. In addition, the other end of the loading unit 420 is a free end and may include at least one fastening groove LG that is coupled along a portion of the object PE. In FIGS. 4A to 4B, one fastening groove (LG) is illustrated as an example, but a plurality of fastening grooves (LG) are described above according to the thickness (t) of the loading part 420 of the free end receiving the object to be processed (PE). It can be formed at the free end.

A hole H may be added to minimize a phenomenon in which gas is accumulated in the fastening groove LG and obstructs the movement of the gas. In one embodiment, at least one hole H may be arranged in the fastening groove LG so that the gas flowing into the reaction chamber 150 does not collect in the fastening groove LG. When there is no hole (H) in the fastening groove (LG), the gas flowing into the reaction chamber 150 is collected in the fastening groove (LG) so that the gas is relatively close to the fastening groove (LG) or the fastening groove (LG). The concentration increases, and thus, it may be difficult to uniformly synthesize a two-dimensional material on the object PE.

In another embodiment, at least a portion of the extension member 410 and the loading portion 420 of the sample holder 400 has a hollow, the hollow extends along the extension member 410 to the loading portion 420, fastening It may be connected to the groove LG. Accordingly, gas flowing into the reaction chamber 150 through the hollow of the sample holder 400 may flow, and thus, the gas may not accumulate in the fastening groove LG.

In one embodiment, in order to minimize the effect of the sample due to the reaction between the raw material gas and the sample holder 400, the material of the loading part 420 is made of quartz (or other material having less reactivity), and the extension member 410 is a sample In order to secure the stability of the holder and equipment, it may include SUS (or a light and high strength material). In addition, since the loading unit 420 and the extension member 410 are detachable, the loading unit 420 can be replaced, and various processes can be performed using the various types of loading units 420.

In addition, the clamp-shaped structure of the loading part 420 may be formed parallel to the length direction, and the clamp-shaped structure of the loading part 420 may be formed perpendicular to the length direction as shown in FIGS. 6A to 6D below.

6A is a plan view of a sample holder according to another embodiment of the present invention, FIG. 6B is a side view of a sample holder according to an embodiment of the present invention, and FIG. 7 is a sample substrate in a reaction chamber according to another embodiment of the present invention. It is a perspective view of a sample holder to mount.

The sample holder 400 of FIGS. 6A to 6B is the same as the sample holder 400 of FIGS. 4A to 4B except that the clamp-shaped structure of the loading part 420 is formed perpendicular to the length direction, so that it is not contradictory. For a detailed description of the sample holder 400 of FIGS. 6A to 6B, reference may be made to the description of the sample holder 400 of FIGS. 4A to 4B.

8A and 8B are views showing an example of arranging a plurality of sample substrates in a reaction chamber according to an embodiment of the present invention, and FIGS. 9A and 9B are a plurality of samples in the reaction chamber according to an embodiment of the present invention. It is a diagram showing an example of arranging a substrate.

Referring to FIG. 8A, the source substrate SS and the target substrate SS may be disposed in parallel with the flow of gas using a plurality of fastening grooves LG in one sample holder 400. Specifically, by arranging the source substrate SS in the first fastening grooves LG and the target substrate TG in the second fastening grooves LG, a source using one sample holder 400 is used. The substrate SS and the target substrate TG may be opposed to each other to be spaced apart from each other.

Referring to FIG. 8B, two sample holders 400 are fixed to one end of the reaction chamber, respectively, and a source substrate SS and a target substrate TG are fixed to the free end, so that the source substrate SS and the target The substrates TG may be parallel to the flow of gas, and may be disposed to face each other so as to be spaced apart.

Referring to FIG. 9A, a source substrate SS and a target substrate SS using a plurality of fastening grooves LG in a sample holder 400 having a clamp-shaped structure perpendicular to the length direction as shown in FIGS. 6A to 6D. Can be placed perpendicular to the gas flow. Specifically, by arranging the source substrate SS in the first fastening grooves LG and the target substrate TG in the second fastening grooves LG, a source using one sample holder 400 is used. The substrate SS and the target substrate TG may be opposed to each other to be spaced apart from each other.

Referring to FIG. 9B, two sample holders 400 are fixed to one end of the reaction chamber, respectively, and a source substrate SS and a target substrate TG are fixed to the free end, so that the source substrate SS and the target The substrate TG is made to be perpendicular to the flow of gas, and may be disposed to face each other so as to be spaced apart.

10A and 10B are views for explaining the reaction energy supply 110 and the plasma generator 120 of the chemical vapor deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 10A, the reaction energy supply 110 is coupled to a support HT and a support HT having a through hole through which the reaction chamber 150 passes, and provides thermal energy or light energy in the reaction space S. It may include a heating member (not shown) that can be supplied. In addition, the support HT may transfer thermal energy or light energy from the heating member to the reaction chamber 150. The heating member may have a resistance wire or a coil for induction heating and may be formed on an inner wall or an outer wall of the support HT. However, in the present invention, the reaction energy generating source is not limited thereto. For example, the heating member may be a halogen lamp or a planar heating element on which a conductive metal thin film is deposited.

In addition, the reaction energy supply 110 is at least one for guiding the movement in the extending direction of the reaction chamber 150 in order to move in the longitudinal direction (eg, x direction) of the reaction chamber 150 through the through hole. The guide portions GR1 and GR2 may be coupled. For example, the reaction energy supply 110 may be guided and moved through a wheel-shaped or slide-shaped rail. Alternatively, the reaction energy supply 110 may be fixed on the first table 210 through fixing members such as screws and bolts.

Referring to FIG. 10B, the plasma generator 120 includes a first electrode G1 and a second electrode G2 that are coupled to the outer wall of the reaction chamber 150 to generate a potential difference in the reaction chamber 150. can do. In an embodiment, a third electrode G3 may be further included. The first electrode G1, the second electrode G2, and the third electrode G3 may be annular electrodes surrounding the reaction chamber 150. However, it is not limited to these in the present invention.

The first electrode G1, the second electrode G2, and the third electrode G3 may be spaced apart from each other in the longitudinal direction of the reaction chamber 150 and may be coupled to the outer wall of the reaction chamber 150. In one embodiment, the first electrode G1, the second electrode G2, and the third electrode G3 may be integrated and implemented, and between the first electrode G1 and the second electrode G2 and the second electrode The electrode G2 and the third electrode G3 may be separated by an insulator. In addition, the first electrode G1 and the third electrode G3 may be connected to ground, and the second electrode G2 may be connected to AC power or DC power. In one embodiment, the first electrode G1 and the third electrode G3 may be connected to AC power or DC power, and the second electrode G2 may be connected to ground.

The first electrode G1 and the third electrode G3 are connected to the ground and AC power or DC power is supplied through the second electrode G2, or the second electrode G2 is connected to the ground and the first electrode ( As AC power or DC power is supplied through G1) and the third electrode G3, or AC power or DC power is supplied, the distribution of plasma in the reaction space S can be symmetrically maintained. On the other hand, in an environment without the third electrode G3, the first electrode G1 is connected to the ground and AC power or DC power is supplied through the second electrode G2, or the second electrode G2 is connected to the ground. When connected and AC power or DC power is supplied through the first electrode G1, the distribution of plasma in the reaction space S may be maintained asymmetrically.

The plasma generator 120 may further include a fixing member BT fixing at least one of the first electrode G1, the second electrode G2, and the third electrode G3 to the reaction chamber 150. . The fixing member BT may be any one of a bolt, a screw, and a screw, but is not limited thereto. The four fixing members BT are combined with the reaction chamber 150, so that the first electrode G1, the second electrode G2, or the third electrode G3 can be fixed to the reaction chamber 150 in an integrated manner, respectively. have. However, the four fixing members BT are only an example, and four or less or four or more fixing members BT may be used for each electrode.

In another embodiment of the present invention, the electrode G1, the second electrode G2, or the third electrode G3 may be separated vertically, as shown in FIG. 3C, instead of an integral type. Hereinafter, the electrode G1, the second electrode G2, or the third electrode G3 is referred to as a separate electrode.

According to the above-described embodiments, the reaction energy supply 110 and the plasma generator 120 are provided through one reaction chamber 150 to provide a reaction space. Surface modification can be performed without exposure to air after a synthesis process such as deposition, and plasma treatment can be performed in-situ during synthesis, thereby having a high stability advantage. The conventional method is transferred to process equipment for surface modification in a state exposed to air after synthesis of the material, so that there is a possibility of unwanted doping or contamination of the synthesized material. In addition, the plasma generator of the present invention has the advantage that a low-temperature process can be implemented to decompose raw materials, and surface treatment is possible.

In general, the synthesis of a 2D semiconductor material may be performed by supplying a transition metal and a chalcogen element by evaporating a solid precursor using a chemical vapor deposition equipment. In the case of the horizontal chemical vapor deposition equipment, sample loading is easy, but when the diameter of the reaction chamber accommodating the sample is large, the flow of gas is affected by gravity, so that the synthetic material may grow unevenly. On the other hand, in the case of the vertical chemical vapor deposition equipment, since it can provide a uniform gas flow regardless of the diameter of the chamber, the synthetic material can grow uniformly, but sample loading is more complicated and difficult compared to the horizontal chemical vapor deposition equipment.

As described above, the chemical vapor deposition system 10 of the present invention loads a sample substrate after holding the reaction chamber 150 horizontally, and then opens the reaction chamber 150 to synthesize a material such as a two-dimensional material. By rotating vertically, sample loading is easy and uniform synthesis is possible. In addition, in the chemical vapor deposition system 10 of the present invention, a sample holder 400 for supporting the object to be processed so as to be parallel to the flow direction of the reaction gas to be supplied into the reaction chamber in a horizontal or vertical state is proposed, and a plasma generator ( 120) may be optionally added, and low-temperature synthesis using the plasma generator 120 is possible. In addition, even if the plasma generator 150 is added, the same reaction chamber 150 as the reaction energy supply 110 can be used in common, so that the synthesized object in the reaction chamber 1500 is cumbersome to another reaction chamber for plasma processing. Without the need to move, the chemical vapor deposition apparatus 100 of the present invention can synthesize and process plasma in one reaction chamber 150.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical spirit of the present invention. It will be obvious to those who have knowledge.

10: chemical vapor deposition system
100: chemical vapor deposition apparatus
120: first table
130: first finishing member
140: second finishing member
150: reaction chamber
200: device cradle
210: first table
220: second table
230: rotation switching member
400: sample holder
PE: target object
PTU: no power transmission
PL: piston rod
CL: extension

Claims (16)

A chemical vapor deposition apparatus including a reaction chamber providing a reaction space in which an object to be processed is accommodated, and a sample holder for controlling a position of the object to be processed in the reaction chamber; And
A holder for fixing and supporting the chemical vapor deposition apparatus and rotating the chemical vapor deposition apparatus so that the reaction chamber is aligned in a first direction perpendicular to the ground or a second direction horizontal to the ground,
The sample holder includes a first end and a second end, the first end of the sample holder is fixed to one end of the reaction chamber, and the second end of the sample holder has the first direction and the second end. A chemical vapor deposition system for fixing the object to be processed in a direction parallel to the flow direction of the gas to be supplied into the reaction chamber. The method of claim 1,
The sample holder
An extension member fastened to one end of the reaction chamber, and
It includes a loading portion including the extension member and a detachable one end and a free portion facing the one end,
The loading unit is a chemical vapor deposition system including at least one fastening groove coupled along a portion of the object to be processed. The method of claim 1,
The device cradle
A first table including a fixing member for fixing the chemical vapor deposition apparatus;
A second table including a power transmission member for transmitting power for converting the first table from the first direction to the second direction or from the second direction to the first direction; And
By connecting the horizontal lower end of the first table and the horizontal upper end of the second table to provide a horizontal rotation shaft so that the first table is aligned in the first direction or the second direction, and the power transmitted from the power transmission member A chemical vapor deposition system comprising at least one rotation conversion member that rotates the horizontal axis of rotation along the way. The method of claim 3,
The device cradle
A chemical vapor deposition system further comprising a vertical damper including one end fixed to the horizontal upper end of the second table and the other end selectively contacting the horizontal lower end of the first table by rotation of the horizontal rotation axis. The method of claim 3,
The device cradle
A chemical vapor deposition system further comprising a horizontal damper including one end fixed to the vertical end of the second table and the other end selectively contacting the horizontal lower end of the first table by rotation of the horizontal rotation axis. The method of claim 3,
The rotation conversion member
A first lower vertical plate including a first lower end fixed to the second table, a first upper end facing the first lower end, and a first hinge ball;
A second lower vertical plate disposed spaced apart from the first lower vertical plate at a predetermined interval, and including a second lower end fixed to the second table, a second upper end facing the second lower end, and a second hinge ball;
A third lower end coupled between the first upper end of the first lower vertical plate and the second upper end of the second lower vertical plate, a third upper end facing the third lower end and fixed to the first table, and a third hinge An upper vertical plate containing a ball;
A chemical vapor deposition system comprising a hinge member passing through the first hinge ball, the second hinge ball, and the third hinge ball to provide a rotation axis. The method of claim 6,
The upper vertical plate further includes a horizontal fixing groove and a vertical fixing groove,
The first lower vertical plate further includes a first horizontal fixing hole and a first vertical fixing hole,
The second lower vertical plate further includes a second horizontal fixing hole and a second vertical fixing hole,
The rotation conversion member
Mounted through the first horizontal fixing hole, the horizontal fixing groove and the second horizontal fixing hole in the longitudinal direction,
A chemical vapor deposition system further comprising a stabilizer pin mounted through the first vertical fixing hole, the vertical fixing groove, and the second vertical fixing hole in a longitudinal direction. The method of claim 3,
The power transmission member
A hydraulic cylinder including a piston and a piston rod contracted or expanded by the piston, a pneumatic cylinder, or a combination thereof,
The piston rod is rotated and contracted so that the first table is aligned from the second direction to the first direction, so that the horizontal rotation shaft is rotated by 90° counterclockwise,
A chemical vapor deposition system in which the piston rod is rotated and expanded so that the first table is aligned from the first direction to the second direction, so that the horizontal axis of rotation is rotated by 90 degrees in a clockwise direction. The method of claim 8,
The power transmission member
A chemical vapor deposition system comprising an extension fixed to the first table 210 and hingedly connected to the piston rod and rotatable. The method of claim 8,
Chemical vapor deposition system wherein the extension has a longitudinal direction perpendicular to the ground. The method of claim 1,
The chemical vapor deposition apparatus,
Further comprising at least one or more of a reaction energy supply unit for synthesizing the object to be processed and a plasma generator for surface modification of the object to be processed,
The reaction energy supplier or the plasma generator can be moved in the longitudinal direction of the reaction chamber so that either the reaction energy supplier or the plasma generator can selectively perform a process on the object to be processed adjacent to the reaction space. A chemical vapor deposition system that is coupled to the reaction tube. The method of claim 11,
The plasma generator,
A chemical vapor deposition system comprising a first electrode and a second electrode coupled to an outer wall of the reaction tube to generate a potential difference in the reaction tube. The method of claim 11,
The reaction energy supplier,
A support having a through hole through which the reaction tube passes; And
A chemical vapor deposition system comprising a heating member coupled to the support and capable of supplying thermal energy or light energy into the reaction space. The method of claim 11,
A first closing member coupled with a first end of the reaction chamber; And
The chemical vapor deposition system further comprising a second finishing member facing the first finishing member and coupled with a second end of the reaction chamber. The method of claim 1,
The object to be processed includes a two-dimensional material,
The two-dimensional material is any one of graphene, hexagonal boron nitride, silicanes, black phosphorus, borophene, transition metal chalcogen material, oxide, or A chemical vapor deposition system comprising a combination thereof. A chemical vapor deposition apparatus including a reaction chamber providing a reaction space in which the object to be processed is provided and a sample holder for controlling the position of the object to be processed in the reaction chamber is fixed and supported, and the reaction chamber is perpendicular to the ground. As a cradle for a device that rotates the chemical vapor deposition apparatus so as to be aligned in one direction or a second direction horizontal to the ground,
The device cradle
A first table including a fixing member for fixing the chemical vapor deposition apparatus;
A second table including a power transmission member for transmitting power for converting the first table from the first direction to the second direction or from the second direction to the first direction; And
A horizontal rotation shaft is provided so that the first table is aligned in the first direction or the second direction by connecting the first horizontal end of the first table and the first horizontal end of the second table, and from the power transmission member Device cradle comprising at least one rotation conversion member for rotating the horizontal rotation shaft according to the transmitted power.

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