KR20190114371A - Transfer head and adsorbing method for micro led using the same - Google Patents

Abstract

The present invention relates to a transfer head for adsorbing a micro LED and transferring the same to a display substrate and a method for adsorbing a micro LED using the same. In particular, the present invention relates to a transfer head capable of mounting good quality micro LEDs on a display substrate without the cumbersome process of selecting defective products from the micro LEDs mounted on the display substrate and mounting the good quality micro LEDs again, and a method of absorbing micro LEDs using the same. The transfer head includes an adsorbing region and a non-adsorbing region.

Description

TRANSFER HEAD AND ADSORBING METHOD FOR MICRO LED USING THE SAME}

The present invention relates to a transfer head for absorbing micro LEDs and transferring them to a display substrate and a micro LED adsorption method using the same.

Currently, the display market is still the mainstream, while OLED is rapidly becoming the mainstream by replacing LCD. As display companies are participating in the OLED market rush, Micro LED (hereinafter referred to as “micro LED”) display is emerging as another next generation display. Whereas the core materials of LCD and OLED are liquid crystal and organic materials, micro LED display is a display that uses LED chip of 1 ~ 100 micrometer (μm) unit as light emitting material.

When Cree applied for a patent on "Micro-light Emitting Diode Arrays with Improved Light Extraction" in 1999 (Registration No. 0731673), the research and development has been published since the publication of the term micro LED. This is done. The challenge to apply micro LEDs to displays requires the development of custom microchips based on flexible materials / devices for micro-LED devices, and the accuracy of transfer and display pixel electrodes of micrometer-sized LED chips. There is a need for technology for mounting.

In particular, in connection with the transfer for transferring the micro LED device to the display substrate, as the LED size is reduced to the unit of 1-100 micrometers (μm), it is not possible to use the existing pick & place equipment, There is a need for a transfer head technology that transfers more precisely. In relation to the transfer head technology, several structures as described below have been proposed, but each proposed technology has some disadvantages.

Luxvue of the United States has proposed a method for transferring a micro LED using an electrostatic head (Public Patent Publication No. 2014-0112486, hereinafter referred to as "prior invention 1"). The transfer principle of the present invention 1 is a principle of generating adhesion between the micro LED and the charging by applying a voltage to a head part made of silicon. This method may cause a problem of micro LED damage due to a charging phenomenon due to the voltage applied to the head during the electrostatic induction.

X-Celeprint Inc. of the United States proposed a method of transferring a micro LED on a wafer to a desired substrate by applying a transfer head as an elastic polymer material (Publication Publication No. 2017-0019415, hereinafter referred to as `` Prevention 2 ''). box). This method has no problems with LED damage compared to the electrostatic head method, but it can transfer micro LEDs stably when the transfer force of the elastic transfer head is larger than the adhesive force of the target substrate, and requires an additional process for electrode formation. There are disadvantages. In addition, maintaining the adhesive strength of the elastomeric material is also a very important factor.

The Korean Institute of Optical Technology proposed a method for transferring micro LEDs using a cilia adhesive structure head (registered patent publication No. 1754528, hereinafter referred to as 'prior invention 3'). However, the preceding invention 3 has a disadvantage in that it is difficult to manufacture the adhesive structure of the cilia.

The Korea Institute of Machinery and Materials proposed a method of transferring micro LEDs by coating an adhesive on a roller (registered patent publication No. 1757404, hereinafter referred to as 'prior invention 4'). However, the present invention 4 requires the continuous use of the adhesive, and there is a disadvantage that the micro LED may be damaged when the roller is pressed.

Samsung Display proposed a method of transferring micro LEDs to an array substrate by electrostatic induction by applying a negative voltage to the first and second electrodes of the array substrate while the array substrate is in a solution. 2017-0026959, hereinafter referred to as `` First Invention 5 ''). However, the prior invention 5 has a disadvantage in that a separate solution is required in that the micro LED is transferred to the array substrate by soaking in a solution, and then a drying process is required.

LG Electronics has proposed a method of arranging a head holder between a plurality of pickup heads and a substrate and deforming its shape by the movement of the plurality of pickup heads to provide a degree of freedom to the plurality of pickup heads. -2017-0024906, hereinafter referred to as 'prior invention 6'). However, the present invention 6 is a method of transferring a micro LED by applying a bonding material having an adhesive force to the adhesive surface of the plurality of pickup heads, there is a disadvantage that a separate process for applying a bonding material to the pickup head is required.

In addition to the problems of the foregoing inventions, the prior inventions do not separately select defective micro LEDs when the transfer head transfers the micro LEDs from the growth substrate to the display substrate. Accordingly, there is a problem in that after the micro LEDs are all mounted on the display substrate, good quality inspection is performed to remove the defective micro LEDs, and then a complicated process of mounting them again.

In order to solve the problems of the preceding inventions, the above-mentioned disadvantages should be improved while adopting the basic principles adopted by the preceding inventions. These disadvantages are derived from the basic principles adopted by the preceding inventions. There are limits to improving the shortcomings. Accordingly, the applicant of the present invention is not only to improve the disadvantages of the prior art, but to propose a new method that has not been considered in the prior inventions at all.

Registered Patent Publication No. 0731673 Published Patent Publication No. 2014-0112486 Korean Laid-Open Patent Publication No. 2017-0019415 Registered Patent Publication No. 1754528 Registered Patent Publication No. 1757404 Patent Publication No. 10-2017-0026959 Patent Publication No. 10-2017-0024906

Accordingly, the present invention provides a transfer head capable of mounting good quality micro LEDs on a display substrate without the cumbersome process of selecting defective products from the micro LEDs mounted on the display substrate and mounting the good quality micro LEDs again, and a micro LED adsorption method using the same. It aims to do it.

In order to achieve the object of the present invention, the micro LED adsorption method using the transfer head of the present invention includes a porous member having pores, wherein the porous member does not adsorb the micro LED and the adsorption region for adsorbing the micro LED. In the micro LED adsorption method using a transfer head having a non-adsorption area, the micro LED is adsorbed to the adsorption area while the transfer head is relatively moved horizontally.

In addition, the micro LED is adsorbed in the adsorption region is characterized in that the good quality micro LED.

In addition, the transfer head, characterized in that for adsorbing the micro LED on the upper part of the collector in which the good micro LED is collected.

In addition, the micro LED adsorbed to the adsorption region is characterized in that the matrix form.

In addition, the transfer head, characterized in that for adsorbing the micro LED on the top of the fluid floated the good micro LED.

The transfer head may be relatively moved in a reciprocating manner.

The transfer head may be rotated and relatively moved.

As described above, the transfer head and the micro LED adsorption method using the same according to the present invention have the following effects.

Since only good LEDs are adsorbed in the collection box or fluid, etc., where good and bad items are already selected, the bad LEDs are selected and removed from the micro LEDs mounted on the display board. You can avoid the complicated process of mounting on. Therefore, the transfer process of the micro LED can be achieved efficiently.

Even if the good micro LEDs are not regularly arranged in the collector or the fluid, the micro LEDs adsorbed to the transfer head have regular intervals as the micro LEDs are adsorbed only in the adsorption area while the transfer head moves horizontally. Therefore, the micro LED can be mounted on the display substrate regularly.

Since the good micro LEDs to be collected or floated in the collector do not need to be arranged regularly, the transfer process of collecting or floating the good micro LEDs in the collector can be performed quickly.

As the adsorption region is formed in the form of a matrix and the micro LEDs are adsorbed in the collecting or fluid, problems occurring when the micro LEDs are adsorbed on the conventional circular growth substrate can be easily solved.

1 is a view showing a micro LED to be transferred in the embodiment of the present invention.
FIG. 2 is a view of a micro LED structure that is transferred to and mounted on a display substrate according to an embodiment of the present invention. FIG.
3 is a view of a transfer head according to a first embodiment of the present invention.
4A to 4D illustrate an embodiment of an adsorption zone and a non-adsorption zone of the first embodiment.
5A to 5E illustrate a method of transferring a micro LED using the transfer head of the first embodiment.
6A to 6E illustrate a method of transferring micro LEDs using the transfer head of the first embodiment.
7 is a view of a transfer head according to a second embodiment of the present invention.
8 is an enlarged view of a portion 'A' of FIG. 7.
9 is a view showing a state in which the transfer head adsorbs the micro LED according to the second embodiment of the present invention.
10 is a diagram showing a modification of the second embodiment.
11A to 11C show a modification of the second embodiment.
12 is a diagram showing a modification of the second embodiment;
13 is a view of a transfer head according to a third embodiment of the present invention.
14 is a diagram showing a modification of the third embodiment.
15 is a view of a transfer head according to a fourth embodiment of the present invention.
16 is a view of a transfer head according to a fifth embodiment of the present invention.
17 is a view showing an embodiment of the protrusion dam of the fifth embodiment.
18 is a diagram showing a modification of the fifth embodiment.
19A and 19B show a modification of the fifth embodiment.

The following merely illustrates the principles of the invention. Therefore, those skilled in the art may implement the principles of the invention and invent various devices included in the concept and scope of the invention, although not explicitly described or illustrated herein. In addition, all conditional terms and embodiments listed herein are in principle clearly intended to be understood only for the purpose of understanding the concept of the invention and are not to be limited to the specifically listed embodiments and states. .

The above objects, features, and advantages will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, and thus, it will be possible to easily implement the technical idea of self-invention having ordinary skill in the art. .

Embodiments described herein will be described with reference to cross-sectional and / or perspective views, which are ideal exemplary views of the invention. The thicknesses of the films and regions and the diameters of the holes shown in these figures are exaggerated for the effective explanation of the technical contents. The shape of the exemplary diagram may be modified by manufacturing techniques and / or tolerances. In addition, the number of micro-LEDs shown in the drawings is only a part of the drawings for illustrative purposes. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in forms generated according to manufacturing processes.

In various embodiments of the present disclosure, components that perform the same function will be given the same names and the same reference numbers for convenience, even though the embodiments are different. In addition, the configuration and operation already described in other embodiments will be omitted for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a micro LED to be transferred in the embodiment of the present invention.

The micro LED 100 is fabricated and positioned on the growth substrate 101.

The growth substrate 101 may be made of a conductive substrate or an insulating substrate. For example, the growth substrate 101 may be formed of at least one of sapphire, SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ .

The micro LED 100 may include a first semiconductor layer 102, a second semiconductor layer 104, an active layer 103 formed between the first semiconductor layer 102 and the second semiconductor layer 104, and a first contact electrode ( 106 and a second contact electrode 107.

The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 may be formed of metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (CVD). Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like.

The first semiconductor layer 102 may be implemented with, for example, a p-type semiconductor layer. The p-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example, GaN, AlN, AlGaN, InGaN, InN , InAlGaN, AlInN, and the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The second semiconductor layer 104 may be formed, for example, including an n-type semiconductor layer. The n-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example, GaN, AlN, AlGaN, InGaN, InNInAlGaN , AlInN, and the like, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

However, the present invention is not limited thereto, and the first semiconductor layer 102 may include an n-type semiconductor layer, and the second semiconductor layer 104 may include a p-type semiconductor layer.

The active layer 103 is a region where electrons and holes are recombined. The active layer 103 may transition to a low energy level as the electrons and holes recombine, and may generate light having a corresponding wavelength. The active layer 103 may include, for example, a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and It may be formed of a quantum well structure or a multi quantum well structure (MQW). In addition, a quantum wire structure or a quantum dot structure may be included.

The first contact electrode 106 may be formed on the first semiconductor layer 102, and the second contact electrode 107 may be formed on the second semiconductor layer 104. The first contact electrode 106 and / or the second contact electrode 107 may comprise one or more layers and may be formed of various conductive materials including metals, conductive oxides and conductive polymers.

The plurality of micro LEDs 100 formed on the growth substrate 101 are cut along the cutting line using a laser or the like, or separately separated by an etching process, and the plurality of micro LEDs 100 are separated by the laser lift-off process. It is possible to be in a state that can be separated from the (101).

In Figure 1 'p' means the pitch interval between the micro LED 100, 's' means the separation distance between the micro LED 100, 'w' means the width of the micro LED (100).

2 is a view of a micro LED structure is transferred to the display substrate and mounted in accordance with an embodiment of the present invention.

The display substrate 301 may include various materials. For example, the display substrate 301 may be made of a transparent glass material mainly containing SiO ₂ . However, the display substrate 301 is not necessarily limited thereto, and may be formed of a transparent plastic material to have solubility. Plastic materials include insulating polyethersulphone (PES), polyacrylate (PAR, polyacrylate), polyetherimide (PEI), polyethylene naphthalate (PEN, polyethyelenen napthalate), polyethylene terephthalate (PET) polyethyeleneterepthalate, polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose tri acetate (TAC), cellulose acetate propionate: CAP) may be an organic material selected from the group consisting of.

When the image is a bottom emission type implemented in the direction of the display substrate 301, the display substrate 301 should be formed of a transparent material. However, when the image is a top emission type implemented in a direction opposite to the display substrate 301, the display substrate 301 does not necessarily need to be formed of a transparent material. In this case, the display substrate 301 may be formed of metal.

When the display substrate 301 is formed of metal, the display substrate 301 may be at least one selected from the group consisting of iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), Invar alloy, Inconel alloy, and Kovar alloy. It may include, but is not limited thereto.

The display substrate 301 may include a buffer layer 311. The buffer layer 311 may provide a flat surface and may block foreign matter or moisture from penetrating. For example, the buffer layer 311 may be formed of inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride, or organic materials such as polyimide, polyester, and acryl. And may be formed of a plurality of laminates of the illustrated materials.

The thin film transistor TFT may include an active layer 310, a gate electrode 320, a source electrode 330a, and a drain electrode 330b.

Hereinafter, the thin film transistor TFT will be described as a top gate type in which the active layer 310, the gate electrode 320, the source electrode 330a, and the drain electrode 330b are sequentially formed. However, the present exemplary embodiment is not limited thereto, and various types of thin film transistors (TFTs), such as a bottom gate type, may be employed.

The active layer 310 may include a semiconductor material, for example, amorphous silicon or poly crystalline silicon. However, the present embodiment is not limited thereto, and the active layer 310 may contain various materials. In some embodiments, the active layer 310 may contain an organic semiconductor material.

In another alternative embodiment, the active layer 310 may contain an oxide semiconductor material. For example, the active layer 310 may be formed of Group 12, 13, 14 metal elements such as zinc (Zn), indium (In), gallium (Ga), tin (Sn) cadmium (Cd), germanium (Ge), and combinations thereof. Oxides of the selected materials.

A gate insulating layer 313 is formed on the active layer 310. The gate insulating layer 313 insulates the active layer 310 and the gate electrode 320. The gate insulating layer 313 may be formed of a multilayer or a single layer formed of an inorganic material such as silicon oxide and / or silicon nitride.

The gate electrode 320 is formed on the gate insulating layer 313. The gate electrode 320 may be connected to a gate line (not shown) for applying an on / off signal to the thin film transistor TFT.

The gate electrode 320 may be made of a low resistance metal material. The gate electrode 320 is made of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg) in consideration of adhesion to adjacent layers, surface flatness of the stacked layers, and workability. , Gold (Au), Nickel (Ni), Neodymium (Nd), Iridium (Ir), Chromium (Cr), Lithium (Li), Calcium (Ca), Molybdenum (Mo), Titanium (Ti), Tungsten (W) It may be formed of a single layer or multiple layers of one or more materials of copper (Cu).

An interlayer insulating layer 315 is formed on the gate electrode 320. The interlayer insulating layer 315 insulates the source electrode 330a, the drain electrode 330b, and the gate electrode 320. The interlayer insulating film 315 may be formed of a multilayer or a single layer of an inorganic material. For example, the inorganic material may be a metal oxide or a metal nitride. Specifically, the inorganic material may be silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), or titanium oxide ( TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO ₂ ), zinc oxide (ZrO ₂ ), and the like.

The source electrode 330a and the drain electrode 330b are formed on the interlayer insulating film 315. The source electrode 330a and the drain electrode 330b include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), and neodymium (Nd). ), Iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu) of one or more materials Can be formed. The source electrode 330a and the drain electrode 330b are electrically connected to the source region and the drain region of the active layer 310, respectively.

The planarization layer 317 is formed on the thin film transistor TFT. The planarization layer 317 is formed to cover the thin film transistor TFT, thereby eliminating a step resulting from the thin film transistor TFT and making the top surface flat. The planarization layer 317 may be formed of a single layer or multiple layers of an organic material. Organic materials include general purpose polymers such as polymethylmethacrylate (PMMA) and polystylene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, arylether polymers, amide polymers, fluorine polymers, and p-xylene Polymers, vinyl alcohol-based polymers and blends thereof, and the like. In addition, the planarization layer 317 may be formed of a composite laminate of an inorganic insulating film and an organic insulating film.

The first electrode 510 is positioned on the planarization layer 317. The first electrode 510 may be electrically connected to the thin film transistor TFT. In detail, the first electrode 510 may be electrically connected to the drain electrode 330b through a contact hole formed in the planarization layer 317. The first electrode 510 may have various shapes. For example, the first electrode 510 may be patterned in an island shape. The bank layer 400 defining the pixel region may be disposed on the planarization layer 317. The bank layer 400 may include a recess in which the micro LED 100 is to be accommodated. For example, the bank layer 400 may include a first bank layer 410 forming a recess. The height of the first bank layer 410 may be determined by the height and viewing angle of the micro LED 100. The size (width) of the recess may be determined by the resolution, the pixel density, and the like of the display device. In an embodiment, the height of the micro LED 100 may be greater than the height of the first bank layer 410. The concave portion may have a rectangular cross-sectional shape, but embodiments of the present disclosure are not limited thereto, and the concave portion may have various cross-sectional shapes such as polygons, rectangles, circles, cones, ellipses, and triangles.

The bank layer 400 may further include a second bank layer 420 on the first bank layer 410. The first bank layer 410 and the second bank layer 420 may have steps, and the width of the second bank layer 420 may be smaller than that of the first bank layer 410. The conductive layer 550 may be disposed on the second bank layer 420. The conductive layer 550 may be disposed in a direction parallel to the data line or the scan line and electrically connected to the second electrode 530. However, the present invention is not limited thereto, and the second bank layer 420 may be omitted, and the conductive layer 550 may be disposed on the first bank layer 410. Alternatively, the second bank layer 420 and the conductive layer 500 may be omitted, and the second electrode 530 may be formed on the entire substrate 301 as a common electrode common to the pixels P. The first bank layer 410 and the second bank layer 420 may include a material that absorbs at least a portion of light, a light reflecting material, or a light scattering material. The first bank layer 410 and the second bank layer 420 may include an insulating material that is translucent or opaque to visible light (eg, light in a wavelength range of 380 nm to 750 nm).

For example, the first bank layer 410 and the second bank layer 420 may be polycarbonate (PC), polyethylene terephthalate (PET), polyether sulfone, polyvinyl butyral, polyphenylene ether, polyamide, poly Thermoplastic resins such as etherimide, norbornene system resins, methacryl resins, cyclic polyolefins, epoxy resins, phenol resins, urethane resins, acrylic resins, vinyl ester resins, imide resins, urethane resins, and urea It may be formed of a thermosetting resin such as resin, melamine resin, or an organic insulating material such as polystyrene, polyacrylonitrile, polycarbonate, but is not limited thereto.

As another example, the first bank layer 410 and the second bank layer 420 may be formed of an inorganic insulating material such as inorganic oxides such as SiOx, SiNx, SiNxOy, AlOx, TiOx, TaOx, ZnOx, and inorganic nitride. It is not limited to this. In one embodiment, the first bank layer 410 and the second bank layer 420 may be formed of an opaque material such as a black matrix material. Insulating black matrix materials include organic resins, resins or pastes comprising glass paste and black pigments, metal particles such as nickel, aluminum, molybdenum and alloys thereof, metal oxide particles (eg chromium oxide), Or metal nitride particles (eg, chromium nitride) or the like. In a modified example, the first bank layer 410 and the second bank layer 420 may be distributed Bragg reflectors (DBR) having a high reflectance or mirror reflectors formed of a metal.

The micro LED 100 is disposed in the recess. The micro LED 100 may be electrically connected to the first electrode 510 in the recess.

The micro LED 100 emits light having a wavelength of red, green, blue, white, and the like, and white light may be realized by using a fluorescent material or combining colors. The micro LED 100 has a size of 1 μm to 100 μm. Each of the micro LEDs 100 is picked up on the growth substrate 101 by a transfer head according to an exemplary embodiment of the present invention, or transferred to the display substrate 301 by a transfer head according to an exemplary embodiment of the present invention. Can be accommodated in

The micro LED 100 includes a p-n diode, a first contact electrode 106 disposed on one side of the p-n diode, and a second contact electrode 107 positioned on the opposite side to the first contact electrode 106. The first contact electrode 106 may be connected to the first electrode 510, and the second contact electrode 107 may be connected to the second electrode 530.

The first electrode 510 may include a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof, and a transparent or translucent electrode layer formed on the reflective film. The transparent or translucent electrode layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O _3, indium oxide), and indium gallium. At least one selected from the group consisting of oxide (IGO; indium gallium oxide) and aluminum zinc oxide (AZO) may be provided.

The passivation layer 520 surrounds the micro LED 100 in the recess. The passivation layer 520 fills the space between the bank layer 400 and the micro LED 100 to cover the recess and the first electrode 510. The passivation layer 520 may be formed of an organic insulating material. For example, the passivation layer 520 may be formed of acrylic, poly (methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, acrylate, epoxy, polyester, and the like, but is not limited thereto. It is not.

The passivation layer 520 is formed above the micro LED 100, for example, at a height not covering the second contact electrode 107, so that the second contact electrode 107 is exposed. A second electrode 530 electrically connected to the exposed second contact electrode 107 of the micro LED 100 may be formed on the passivation layer 520.

The second electrode 530 may be disposed on the micro LED 100 and the passivation layer 520. The second electrode 530 may be formed of a transparent conductive material such as ITO, IZO, ZnO, or In ₂ O ₃ .

First embodiment

3 is a view of a transfer head according to a first embodiment of the present invention, Figures 4a to 4d is a view showing an embodiment of the adsorption zone and the non-adsorption zone of the first embodiment.

The micro LED transfer head 1000 according to the first embodiment of the present invention includes a porous member 1100 having pores, and the porous member 1000 includes an adsorption region 1110 that adsorbs the micro LED 100. The non-adsorption area 1130 does not adsorb the micro LED 100.

The micro LED transfer head 1000 applies a suction force to the pores of the porous member 1100 or releases the suction force applied to the pores so that the micro LED 100 is removed from the first substrate (eg, the growth substrate 101). The transfer head is transferred to two substrates (for example, the display substrate 301).

The micro LED 100 is adsorbed to the adsorption region 1110 while the micro LED transfer head 1000 moves horizontally.

The suction chamber 1200 is provided on the porous member 1100. The suction chamber 1200 is connected to a suction port for supplying or releasing the suction force. The suction chamber 1200 applies a suction force to the plurality of pores of the porous member 1100 according to the operation of the suction port or releases the suction force applied to the pores. The structure in which the suction chamber 1200 is coupled to the porous member 1100 is a structure suitable for preventing leakage of gas (or air) to other sites in applying suction force to the porous member 1100 or releasing the applied suction force. There is no limitation.

Adsorption of the micro LED 100 through the above suction chamber 1200 may be implemented by adsorption by vacuum. Therefore, in the following description, the transfer head 1000 will be described based on the suction of the micro LED 100 by vacuum.

During vacuum adsorption of the micro LED 100, the vacuum applied to the suction chamber 1200 is transferred to a plurality of pores of the porous member 1100 to generate a vacuum adsorption force on the micro LED 100. On the other hand, when the micro LED 100 is detached, as the vacuum applied to the suction chamber 1200 is released, the vacuum is also released to a plurality of pores of the porous member 1100 to remove the vacuum suction force on the micro LED 100. .

The porous member 1100 includes a material containing a large number of pores therein, and may be formed in a powder, thin film / thick film, and bulk form having a porosity of about 0.2 to 0.95 in a predetermined arrangement or a disordered pore structure. . The pores of the porous member 1100 can be classified into micro pores of 2 nm or less in diameter, meso pores of 2 to 50 nm, and macro pores of 50 nm or more, depending on the size thereof. At least in part. The porous member 1100 may be classified into organic, inorganic (ceramic), metal, and hybrid porous materials according to components thereof. The porous member 1100 includes an anodization film in which pores are formed in a predetermined arrangement. The porous member 1100 may be powder, coating film, bulk in terms of shape, and in the case of powder, various shapes such as spherical, hollow spherical, fiber, tubular, and the like may be used, although the powder may be used as it is, but as a starting material It is also possible to manufacture and use a coating film and a bulk shape.

When the pores of the porous member 1100 have a disordered pore structure, the inside of the porous member 1100 forms an air flow path connecting the upper and lower portions of the porous member 1100 while the plurality of pores are connected to each other. On the other hand, when the pores of the porous member 1100 has a vertical pore structure, the interior of the porous member 1100 penetrates up and down the porous member 1100 by vertical pores to form an air flow path To be able.

The porous member 1100 includes an adsorption region 1110 that adsorbs the micro LED 100 and a nonadsorption region 1130 that does not adsorb the micro LED 100. Adsorption region 1110 is a region in which the vacuum of the suction chamber 1200 is delivered to adsorb the micro LED 100, and the non-adsorption region 1130 is a micro LED (A) as the vacuum of the suction chamber 1200 is not transmitted. 100) is an area that does not adsorb.

The non-adsorption region 1130 may be implemented by forming a shield on at least part of the surface of the porous member 1100. The shield as described above is formed to block pores formed on at least a portion of the surface of the porous member 1100. The shielding portion may be formed on at least some of the upper and lower surfaces of the porous member 1100, and in particular, when the pore structure of the porous member 1100 is a disordered pore structure, both the upper and lower surfaces of the porous member 1100 may be formed. Can be formed.

The shielding portion is not limited in material, shape, and thickness as long as it can perform a function of blocking pores on the surface of the porous member 1100. Preferably, the photoresist may be further formed of a photoresist (including PR, dry film PR) or a metal material, and may be formed by a self-constituting structure of the porous member 1100. Here, as the self-constituting part of the porous member 1100, for example, when the porous member 1100 to be described later is composed of an anodized film, the shield may be a barrier layer or a metal base material.

The size of the horizontal area of each adsorption region 1110 may be smaller than the size of the horizontal area of the upper surface of the micro LED 100, thereby preventing the leakage of vacuum while vacuum adsorption of the micro LED (100) Vacuum adsorption can be made easier.

The transfer head 1000 may be provided with a monitoring unit for monitoring the vacuum degree of the suction chamber 1200. The monitoring unit monitors the vacuum degree formed in the suction chamber 1200, and the controller may control the vacuum degree of the suction chamber 1200 according to the degree of the vacuum degree of the suction chamber 1200. When the vacuum degree of the suction chamber 1200 is formed in the monitoring unit at a vacuum degree lower than the preset vacuum degree range, the control unit is a case in which some of the micro LEDs 100 to be vacuum-adsorbed to the porous member 1100 are not vacuum-adsorbed. In some cases, it may be determined that there is a leakage of vacuum, and the reactivation of the transfer head 1000 may be commanded. As such, according to the degree of vacuum in the suction chamber 1200, the transfer head 1000 may transfer the micro LED 100 without error.

In addition, the transfer head 1000 may be provided with a buffer member to buffer the contact between the porous member 1100 and the micro LED (100). The buffer member is not limited in its material as long as it has elastic restoring force while buffering contact between the porous member 1100 and the micro LED 100. The buffer member may be formed between the porous member 1100 and the suction chamber 1200, but the installation position of the buffer member is not limited thereto. As long as the contact between the porous member 1100 and the micro LED 100 can be buffered, the buffer member may be installed at any position of the transfer head 1000.

In the case where the column pitch spacing of the micro LEDs 100 on the growth substrate 101 is P (n) and the row pitch pitch is P (m), the adsorption region 1110 is grown as shown in FIG. 4A. It may be formed with a pitch interval equal to the pitch interval of the micro LED 100 on the (101). In other words, when the column pitch spacing of the micro LEDs 100 on the growth substrate 101 is P (n) and the row pitch pitch is P (m), the adsorption region 1100 of the transfer head 1000 is formed. The column pitch pitch is P (n) and the row pitch pitch is P (m). According to the above configuration, the micro LED transfer head 1000 may be vacuum-adsorbed and transported the entire micro LED 100 on the growth substrate 101 at once.

In contrast, in the case where the column pitch interval of the micro LED 100 on the growth substrate 101 is P (n) and the row pitch pitch is P (m), as shown in FIG. 4B, the adsorption region 1100. Column pitch pitch may be 3p (n), and the row pitch pitch may be p (m). Here, the meaning of 3p (n) means that it is three times the column pitch pitch p (n) shown in FIG. 4A. According to the above configuration, only the micro LED 100 corresponding to the triple drainage heat can be transported by vacuum adsorption. Herein, the micro LED 100 transferred to the tripled heat may be any one of red, green, blue, and white LEDs. By such a configuration, the micro LEDs 100 having the same emission color mounted on the display substrate 301 can be transferred at a distance of 3p (n).

Alternatively, in the case where the column pitch spacing of the micro LED 100 on the growth substrate 101 is P (n) and the row pitch pitch is P (m), as shown in FIG. 4C, the adsorption region 1100. Column pitch pitch may be p (n), and the row pitch pitch may be 3p (m). Here, 3p (m) means that it is three times the row direction pitch interval p (m) shown in Fig. 4A. According to the configuration as described above, only the micro LED 100 corresponding to the triple row can be vacuum-adsorbed and transported. Herein, the micro LED 100 transferred in the triple row may be any one of a red, green, blue, and white LED. By such a configuration, the micro LEDs 100 having the same emission color mounted on the display substrate 301 can be transferred at a distance of 3p (m).

In contrast, in the case where the column pitch interval of the micro LED 100 on the growth substrate 101 is P (n) and the row pitch pitch is P (m), as shown in FIG. 4D, the adsorption region 1100 is shown. Are formed in the diagonal direction, and pitch intervals in the column and row directions may be formed by 3p (n) and 3p (m), respectively. Herein, the micro LED 100 transferred to a triple multiple row and triple multiple columns may be any one of red, green, blue, and white LEDs. By such a configuration, the micro LEDs 100 of the same emission color mounted on the display substrate 301 are spaced apart at intervals of 3p (n) and 3p (m), thereby transferring the microLEDs 100 of the same emission color in a diagonal direction. Can be.

In the case of the present invention, since the cross-sectional shape of the micro LED 100 is circular, the adsorption region 1110 is also formed in a circular shape as shown in Figure 4a to 4d, the shape of the adsorption region 1110 is micro It may vary depending on the cross-sectional shape of the LED 100. For example, when the cross-sectional shape of the micro LED 100 is a quadrangle, the shape of the adsorption region 1110 may also have a quadrangle shape corresponding to the cross-sectional shape of the micro LED 100.

Hereinafter, a method of transferring the good quality micro LED 100 collected in the collecting box 50 by using the micro LED transfer head 1000 according to the first embodiment of the present invention with reference to FIGS. 5A to 5E. Explain.

5A to 5E are flowcharts illustrating a transfer method using the micro LED transfer head 1000 according to the first embodiment of the present invention.

First, the plurality of micro LEDs 100 are allowed to be separated from the growth substrate 101.

The plurality of micro LEDs 100 separated from the growth substrate 101 performs a good quality inspection and transfers the good quality micro LEDs 100 except the defective items to the collection box 50.

The good quality micro LED 100 transferred to the collection box 50 is placed in the collection box, as shown in FIG. 5A. In this case, the spacing between the micro LEDs 100 may have an irregular spacing unlike the growth substrate 101. This is because even if the micro LED 100 does not have a regular interval in the collection box 50, the micro LED 100 may be transferred with a regular interval again due to the adsorption of the transfer head 1000 to be described later.

Referring to FIG. 5B, the transfer head 1000 has a suction force in the adsorption region 1110 and is horizontal in the upper direction of the plurality of micro LEDs 100 collected in the collecting box 50 (the right direction in FIG. 5B). Go to).

In other words, the transfer head 1000 includes a plurality of micro collected in the lower surface of the transfer head 1000, that is, the porous member 1100 having the adsorption region 1110 and the non-adsorption region 1130. It moves in the horizontal direction with a predetermined distance from the upper surface of the LED (100). In this case, the predetermined distance is preferably set to a distance such that the micro LED 100 can be adsorbed by the adsorption force of the adsorption region 1110.

Since suction force is generated in the adsorption region 1110 of the transfer head 1000, the leftmost micro LED 100 of the collection box 50 is the adsorption system at the far right of the adsorption region 1110 of the transfer head 1000. Adsorbed to the region 1110.

As the transfer head 1000 continues to move in the right direction, as shown in FIG. 5C, the micro LED 100 on the right side of the sucked micro LED 100 is attracted to the suction area 1110 of the transfer head 1000. Is adsorbed to the adsorption zone 1110 at the far right of the.

Thereafter, as the transfer head 1000 continues to move in the right direction, as shown in FIGS. 5D and 5E, the micro LEDs 100 placed in the collecting container 50 in the adsorption region 1110 are sequentially adsorbed. .

As described above, the micro LED 100 adsorbed to the adsorption region 1110 of the transfer head 1000 is lowered after the transfer head 1000 moves to the display substrate 301. The lowered transfer head 1000 releases the suction force, thereby unloading the adsorbed micro LED 100 onto the display substrate 301. The unloaded good quality micro LED 100 is mounted on the display substrate 301.

Meanwhile, in FIGS. 5A to 5E, the transfer head 1000 is horizontally moved only in one direction, that is, in the right direction for ease of description. However, the transfer head 1000 is a good-quality micro LED 100 having a transfer head. Until all of the adsorption region 1110 of 1000 is adsorbed, horizontal movement can be freely performed on a plane parallel to the collecting container 50.

In other words, if the X-axis in the left and right directions of FIG. 5A and the Y-axis is perpendicular to the X-axis and parallel to the collecting container 50, the transfer head 1000 is X-axis and Y-axis on the XY plane. By moving freely, the good micro LED 100 can be adsorbed to the adsorption region 1110 of the transfer head 1000.

In addition, the transfer head 1000 reciprocates on the XY plane until all of the good micro LEDs 100 are adsorbed in the plurality of adsorption regions 1110, thereby providing good micro LEDs in all of the plurality of adsorption regions 1110. 100) can be adsorbed.

In addition, the transfer head 1000 rotates on the XY plane until all of the good micro LEDs 100 are absorbed in the plurality of adsorption regions 1110, thereby allowing the good micro LEDs 100 in all of the plurality of adsorption regions 1110. ) Can be adsorbed.

The transfer head 1000 that adsorbs the micro LEDs 100 by the above-described method includes all of the transfer heads 1000 that adsorb the micro LEDs 100 by vacuum, magnetic force, electrostatic force, or the like.

In addition, the transfer head 1000 may be provided with an adsorption completion discrimination unit for checking whether the micro LED 100 is adsorbed to all of the adsorption regions 1110 of the transfer head 1000. The adsorption completion determination unit may be provided in the form of a sensor to determine whether the micro LED 100 is adsorbed to the adsorption region 1110 or not. If the transfer head 1000 is in the form of adsorbing the micro LED 100 to the adsorption region 1110 through a vacuum, that is, a suction force, the adsorption completion determination unit is a pressure of the gas that changes according to the vacuum pressure or the suction force. The measurement may be performed to check whether all of the micro LEDs 100 are adsorbed to the adsorption region 1110 of the transfer head 1000.

As the transfer head 1000 according to the first embodiment of the present invention moves in the horizontal direction as described above, the transfer effect of the good quality micro LED 100 collected in the collecting box 50 is transferred as follows. There is.

Since only good LEDs and good products are collected in the collection box 50 where good and bad products are selected, unlike the prior art, after removing and removing defective products from the micro LEDs 100 mounted on the display substrate 301, In addition, the micro LED 100 of the good product may not perform a complicated process of mounting the micro LED 100 of the defective product mounted on the seat. Therefore, the transfer process of the micro LED 100 can be efficiently achieved.

Even if the good micro-LEDs 100 are not regularly arranged in the collection box 50, the transfer heads 1000 are moved in the horizontal direction, so that the micro-LEDs 100 are absorbed only in the adsorption region 1110. The micro LEDs 100 adsorbed to 1000 have regular intervals. Therefore, the micro LED 100 can be mounted on the display substrate 301 regularly. Furthermore, since the good quality micro LED 100 collected in the collecting box 50 does not need to be regularly arranged on the collecting box 50, the good quality micro LED 100 is collected and collected in the collecting box 50. The process can be performed quickly.

If the shape of the adsorption region 1110 of the transfer head 1000 is formed in a matrix form as shown in FIG. 4A, the good quality micro LEDs 100 adsorbed to all of the adsorption regions 1110 of the transfer head 1000 are matrix-shaped. It may have a. In this case, the micro LEDs 100 adsorbed in the matrix form are adsorbed to the adsorption region 1110 with a regular interval between the micro LEDs 100.

As described above, as the adsorption region 1110 and the non-adsorption region 1130 are formed such that the adsorption region 1110 of the transfer head 1000 has a matrix shape, the following effects are obtained.

In the prior art, a transfer head was a system in which a micro LED was adsorbed on a circular growth substrate. Therefore, when the micro LED is transferred from the circular growth substrate to the rectangular display substrate, there is a problem in that the micro LED of the outer portion of the circular portion is not absorbed and cannot be involved in the transfer.

However, as described above, in the case of the present invention, since the adsorption region 1110 is in the form of a matrix and collects the micro LEDs 100 from the collecting box 50, the problem caused by the aforementioned circular growth substrate is solved. It can be.

The method of adsorbing the micro LED 100 in the collecting box 50 through the transfer head 1000 may be performed by other methods.

For example, unlike the above, the suction force is generated in the adsorption region 1110 in a state in which the transfer head 1000 does not move in the horizontal direction, and the good quality micro LED 100 placed in the collection box 50 is the adsorption region ( Adsorption of the micro LED 100 to the transfer head 1000 may be achieved by moving the collector 50 horizontally until it is adsorbed to all of the 1110. In this case, the collection box 50 may move in a reciprocating direction in the horizontal direction, may be rotated to move.

Therefore, as described above, the transfer head 1000 is moved in the horizontal direction or the collecting box 50 is moved in the horizontal direction, so that the transfer head 1000 is moved relative to the horizontal and the micro LED (100) in the adsorption region 1110. ) Can be adsorbed.

Hereinafter, a method of transferring the good quality micro LED 100 floated in the fluid 60 using the micro LED transfer head 1000 according to the first embodiment of the present invention will be described with reference to FIGS. 6A to 6E. do.

6A to 6E illustrate a method of transferring micro LEDs using the transfer head of the first embodiment.

First, the plurality of micro LEDs 100 are allowed to be separated from the growth substrate 101.

The plurality of micro LEDs 100 separated from the growth substrate 101 performs a good quality inspection to transfer the good quality micro LEDs 100 except the defective products to the fluid 60.

The good micro LED 100 transferred to the fluid 60 is floated in the fluid 60, a portion of the lower part may be slightly submerged in the fluid 60.

The good micro LED 100 transferred to the fluid 60 is floated on the fluid 60, as shown in FIG. 6A. In this case, the spacing between the micro LEDs 100 may have an irregular spacing unlike the growth substrate 101. This is because even if the micro LED 100 floated in the fluid 60 does not have a regular interval, it can be transferred again with a regular interval due to the adsorption of the transfer head 1000 to be described later.

Referring to FIG. 6B, the transfer head 1000 has a horizontal direction (the right direction in FIG. 6B) in the upper portion of the plurality of micro LEDs 100 floated in the fluid 60 while the suction force of the adsorption region 1110 is generated. Go to.

In other words, the transfer head 1000 has a lower surface of the transfer head 1000, that is, the porous member 1100 having the adsorption region 1110 and the non-adsorption region 1130 may have a plurality of micro LEDs floating on the fluid 60. It moves in the horizontal direction with a predetermined distance from the upper surface of the (100). In this case, the predetermined distance is preferably set to a distance such that the micro LED 100 can be adsorbed by the adsorption force of the adsorption region 1110.

Since suction force is generated in the adsorption region 1110 of the transfer head 1000, the micro LED 100 floating on the leftmost side of the fluid 60 is the adsorption system at the far right of the adsorption region 1110 of the transfer head 1000. Adsorbed to the region 1110.

As the transfer head 1000 continues to move in the right direction, as shown in FIG. 6C, the micro LED 100 floating on the right side of the absorbed micro LED 100 is moved to the adsorption area ( It is adsorbed to the adsorption zone 1110 at the rightmost second of 1110.

Thereafter, as the transfer head 1000 continues to move in the right direction, as shown in FIGS. 6D and 6E, the micro LED 100 is sequentially adsorbed by floating the fluid 60 in the adsorption region 1110.

As described above, the micro LED 100 adsorbed in the adsorption region 1110 of the transfer head 1000 has the micro LED 100 on the display substrate 301 after the transfer head 1000 moves to the display substrate 301. By unloading, the good quality micro LED 100 is easily mounted on the display board 301.

6A to 6E illustrate that the transfer head 1000 horizontally moves only in one direction, that is, in the right direction, for ease of description, the transfer head 1000 has a good quality micro LED 100 transferred to the transfer head. Until all of the adsorption regions 1110 of 1000 are adsorbed, horizontal movement can be freely performed on a plane parallel to the surface of the fluid 60.

In other words, if the X-axis in the left and right directions of FIG. 6A and the Y-axis is perpendicular to the X-axis and parallel to the surface of the fluid 60, the transfer head 1000 is X-axis and Y-axis on the XY plane. By freely moving along the axis, the good quality micro LED 100 can be attracted to the adsorption region 1110 of the transfer head 1000.

In addition, the transfer head 1000 reciprocates on the XY plane until all of the good micro LEDs 100 are adsorbed in the plurality of adsorption regions 1110, thereby providing good micro LEDs in all of the plurality of adsorption regions 1110. 100) can be adsorbed.

In addition, the transfer head 1000 rotates on the XY plane until all of the good micro LEDs 100 are absorbed in the plurality of adsorption regions 1110, thereby allowing the good micro LEDs 100 in all of the plurality of adsorption regions 1110. ) Can be adsorbed.

The transfer head 1000 that adsorbs the micro LEDs 100 by the above-described method includes all of the transfer heads 1000 that adsorb the micro LEDs 100 by vacuum, magnetic force, electrostatic force, or the like.

In addition, the transfer head 1000 may be provided with an adsorption completion discrimination unit for checking whether the micro LED 100 is adsorbed to all of the adsorption regions 1110 of the transfer head 1000. The adsorption completion determination unit may be provided in the form of a sensor to determine whether the micro LED 100 is adsorbed to the adsorption region 1110 or not. If the transfer head 1000 is in the form of adsorbing the micro LED 100 to the adsorption region 1110 through a vacuum, that is, a suction force, the adsorption completion determination unit is a pressure of the gas that changes according to the vacuum pressure or the suction force. The measurement may be performed to check whether all of the micro LEDs 100 are adsorbed to the adsorption region 1110 of the transfer head 1000.

As the transfer head 1000 according to the first exemplary embodiment of the present invention moves in the horizontal direction as described above, the transfer head 1000 absorbs and transfers the good-quality micro LED 100 floated on the fluid 60, and thus has the following effects. have.

Since only good LEDs and good products are collected in the collection box 50 where good and bad products are selected, unlike the prior art, after removing and removing defective products from the micro LEDs 100 mounted on the display substrate 301, In addition, the micro LED 100 of the good product may not perform a complicated process of mounting the micro LED 100 of the defective product mounted on the seat. Therefore, the transfer process of the micro LED 100 can be efficiently achieved.

Even if the good micro-LEDs 100 are regularly arranged in the fluid 60 and not floated in the fluid 60, the micro-LEDs 100 only move to the adsorption region 1110 while the transfer head 1000 is moved in the horizontal direction. As adsorbed, the micro LEDs 100 adsorbed to the transfer head 1000 have regular intervals. Therefore, the micro LED 100 can be mounted on the display substrate 301 regularly.

In addition, since the good quality micro LED 100 floating on the fluid 60 does not need to be regularly arranged on the collection box 50, the process of selecting and transferring the good quality micro LED 100 to the fluid 60 is Can be done quickly

Furthermore, in the case of the collection box 50 described above, when the micro LED 100 is collected in an irregular arrangement, another micro LED 100 may be placed on the micro LED 100. However, in the case of the fluid 60, due to the fluidity of the fluid 60, it is difficult for another micro LED 100 to be placed on top of the micro LED 100 floated on the fluid 60. Therefore, since the good-quality micro LED 100 floating on the fluid 60 has only one layer, adsorption by the transfer head 1000 can be made more easily.

If the shape of the adsorption region 1110 of the transfer head 1000 is formed in a matrix form as shown in FIG. 4A, the good quality micro LEDs 100 adsorbed to all of the adsorption regions 1110 of the transfer head 1000 are matrix-shaped. It may have a. In this case, the micro LEDs 100 adsorbed in the matrix form are adsorbed to the adsorption region 1110 with a regular interval between the micro LEDs 100.

As described above, as the adsorption region 1110 and the non-adsorption region 1130 are formed such that the adsorption region 1110 of the transfer head 1000 has a matrix shape, the following effects are obtained.

In the prior art, a transfer head was a system in which a micro LED was adsorbed on a circular growth substrate. Therefore, when the micro LED is transferred from the circular growth substrate to the rectangular display substrate, there is a problem in that the micro LED of the outer portion of the circular portion is not absorbed and cannot be involved in the transfer.

However, as described above, in the case of the present invention, since the adsorption region 1110 is in the form of a matrix and collects the micro LEDs 100 from the collecting box 50, the problem caused by the aforementioned circular growth substrate is solved. It can be.

The method of adsorbing the micro LED 100 in the fluid 60 through the transfer head 1000 may be performed by other methods.

For example, unlike the above, the suction force is generated in the adsorption region 1110 in a state where the transfer head 1000 is not moved in the horizontal direction, and the good quality micro LED 100 floated in the fluid 60 is the adsorption region ( Adsorption of the micro LED 100 to the transfer head 1000 may be achieved by moving the fluid reservoir stored therein in the horizontal direction until it is adsorbed to all of the 1110. In this case, the fluid storage part may move in a reciprocating direction in the horizontal direction, may be rotated to move.

Alternatively, the micro LED 100 may be flowed into the fluid 60 stored in the fluid storage unit until the good micro LED 100 floated in the fluid 60 is adsorbed to all the adsorption regions 1110. Is moved relative to the transfer head 1000, so that adsorption of the micro LED 100 to the transfer head 1000 may be achieved. In this case, the micro LED 100 may be reciprocated in the horizontal direction by the flow of the fluid 60, may be rotated to move.

Accordingly, as described above, the transfer head 1000 is moved in the horizontal direction, or the micro LED 100 floated in the fluid storage unit or the fluid 60 is moved in the horizontal direction, whereby the transfer head 1000 is moved relative to the horizontal direction. While adsorbing the micro LED 100 to the adsorption region 1110.

The method of transferring the good-quality micro LED 100 from the collector 50 or the fluid 60 by using the micro LED transfer head 1000 according to the first embodiment of the present invention described above will be described in various embodiments and It can also be applied to the micro LED transfer head 1000 according to the modification.

Second embodiment

Hereinafter, a second embodiment of the present invention will be described. However, embodiments described below will be described based on the characteristic elements compared to the first embodiment, and descriptions of the same or similar elements as the first embodiment will be omitted.

7 is a view of a transfer head according to a second embodiment of the present invention, FIG. 8 is an enlarged view of a portion 'A' of FIG. 7, and FIG. 9 is a micro LED of a transfer head according to a second embodiment of the present invention. It is a figure which shows the state which adsorb | sucked.

The micro LED transfer head 1000 according to the second embodiment is characterized in that the porous member 1100 described in the first embodiment is an anodizing film 1300 having pores formed by anodizing a metal.

The anodic oxide film 1300 means a film formed by anodizing a base metal, and the pores 1303 means a hole formed in the process of forming an anodized film 1300 by anodizing a metal. For example, when the base metal is aluminum (Al) or an aluminum alloy, when the base material is anodized, an anodized film 1300 made of anodized aluminum (Al ₂ O ₃ ) is formed on the surface of the base material. As described above, the formed anodization film 1300 is divided into a barrier layer 1301 in which pores 1303 are not formed therein and a porous layer in which pores 1303 are formed. The barrier layer 1301 is positioned above the base material, and the porous layer is positioned above the barrier layer 1301. As such, when the base material is removed from the base material formed on the surface of the anodized film 1300 having the barrier layer 1301 and the porous layer, only the anodized film 1300 made of anodized aluminum (Al ₂ O ₃ ) material remains.

The anodic oxide film 1300 has pores 1303 having a regular array while having a uniform diameter and a vertical shape. Therefore, when the barrier layer 1301 is removed, the pores 1303 have a structure vertically penetrated up and down, thereby making it easy to form a vacuum pressure in the vertical direction.

An interior of the anodization film 1300 may form an air flow path in a vertical shape by vertical pores 1303. The inner width of the pores 1303 has a size of several nm to several hundred nm. For example, when the size of the micro LED to be vacuum adsorbed is 30 μm × 30 μm and the internal width of the pores 1303 is several nm, the micro LED 100 may be formed using approximately tens of millions of pores 1303. Can be adsorbed in vacuum. On the other hand, when the size of the micro LED to be vacuum suction is 30㎛ x 30㎛ and the inside width of the pores 1303 is hundreds of nm, the micro LED 100 by using the tens of thousands of pores (1303) It can be adsorbed in vacuum. In the case of the micro LED 100, basically, the first semiconductor layer 102, the second semiconductor layer 104, the active layer 103 formed between the first semiconductor layer 102 and the second semiconductor layer 104, Since only the first contact electrode 106 and the second contact electrode 107 are relatively light, vacuum adsorption is possible using tens of thousands to tens of millions of pores 1303 of the anodic oxide film 1300.

The suction chamber 1200 is provided on the anodization film 1300. The suction chamber 1200 is connected to a suction port for supplying a vacuum. The suction chamber 1200 functions to apply a vacuum or release the vacuum to a plurality of vertical pores of the anodization film 1300 according to the operation of the suction port.

Upon adsorption of the micro LED 100, the vacuum applied to the suction chamber 1200 is transferred to a plurality of pores 1303 of the anodization film 1300 to provide a vacuum adsorption force for the micro LED 100. On the other hand, when the micro LED 100 is detached, as the vacuum applied to the suction chamber 1200 is released, the vacuum is also released to the plurality of pores 1303 of the anodization film 1300, so that the vacuum adsorption force on the micro LED 100. Is removed.

The anodization film 1300 includes an adsorption region 1110 for vacuum adsorption of the micro LED 100 and a non-adsorption region 1130 for not adsorbing the micro LED 100. Adsorption region 1110 is a region in which the vacuum of the suction chamber 1200 is transferred to vacuum suction the micro LED 100, non-adsorption region 1130 is a micro LED as the vacuum of the suction chamber 1200 is not transferred It is an area which does not adsorb 100.

Preferably, the adsorption region 1310 may be a region through which the upper and lower portions of the pores 1303 pass, and the non-adsorption region 1330 may be an region in which at least one portion of the upper and lower portions of the pores 1303 is closed. have.

The non-adsorption region 1130 may be implemented by forming a shield on at least part of the surface of the anodization film 1300. The shielding portion as described above is formed to block the inlet of the pores 1303 exposed to at least part of the surface of the anodization film 1100. The shield may be formed on at least some of the upper and lower surfaces of the anodization film 1300. The shielding portion is not limited in material, shape, and thickness as long as the shielding portion can perform a function of blocking an inlet of the pores 1303 exposed to the surface of the porous member 1100. Preferably, the turn may be further formed of a photoresist (including PR, dry film PR) or a metal material, and may be a barrier layer 1301.

The non-adsorption region 1330 may be formed by closing one of the upper and lower portions of the vertical pores 1303 by the barrier layer 1301 formed when the anodization layer 1310 is manufactured. 1310 may be formed such that the barrier layer 1301 is removed by etching, such that the top and bottom of the vertical pores 1303 penetrate each other.

In addition, since the pores 1303 penetrating up and down are formed as a part of the barrier layer 1301 is removed, the thickness of the anodic oxide film 1300 of the adsorption region 1310 is the anodic oxide film 1300 of the non-adsorption region 1330. Is less than the thickness.

In FIG. 7, the barrier layer 1301 is positioned above the anodization film 1300, and the porous layer 1305 having pores 1303 is positioned below the barrier layer 1301. 7 may be inverted up and down to form a non-adsorption region 1330 so as to be positioned below the bottom surface of the anodic oxide film 1300.

Meanwhile, although the non-adsorption region 1330 has been described as one of the upper and lower portions of the pores 1303 being closed by the barrier layer 1301, the opposite side of the non-adsorption area 1330 is not closed by the barrier layer 1301. The coating layer may be added to configure the top and the bottom to be closed.

In the non-adsorption region 1330, the upper and lower surfaces of the anodic oxide film 1300 are both closed, compared to the non-adsorbing region 1330. It is advantageous in that it can reduce the risk of foreign matter remaining in the pores (1303).

FIG. 10 shows a modification of the transfer head shown in FIG. 9. In the transfer head illustrated in FIG. 10, a support 1307 for reinforcing the strength of the anodic oxide film 1300 is further formed on the non-adsorption region 1330.

In one example, the support 1307 may be a base metal material. The base metal material may be provided on the barrier layer 1301 without being removed during the anodization, and the base metal material may be the support part 1307.

Referring to FIG. 10, in the non-adsorption area 1330, a metal base material 1307, a barrier layer 1301, and a porous layer 1305 having pores 1303 are formed, and an adsorption area 1310 is provided. ) Is formed to penetrate the upper and lower pores 1303 as the metal base material 1307 and the barrier layer 1301 are removed. A base metal material 1307 is provided in the non-adsorption region 1330 to secure the rigidity of the anodic oxide film 1300.

By the configuration of the support unit 1307 as described above, it is possible to increase the strength of the anodic oxide film 1300, which is relatively weak in strength, so that the size of the transfer head 1000 composed of the anodic oxide film 1300 can be large. .

In Fig. 11A, a modification of the transfer head shown in Fig. 9 is shown. In the transfer head illustrated in FIG. 11A, a permeation hole 1309 is additionally formed in the adsorption region 1310 of the anodic oxide film 1300 in addition to the pores 1303 naturally formed in the anodic oxide film 1300.

The transmission hole 1309 is formed to penetrate the upper and lower surfaces of the anodization film 1300. The diameter of the through hole 1309 is larger than the diameter of the pores 1303. Due to the configuration in which the through holes 1309 having a diameter larger than the diameter of the pores 1303 are formed, the vacuum for the micro LEDs 100 is reduced compared to the configuration in which the micro LEDs 100 are vacuum-adsorbed only by the pores 1303. The adsorption area can be increased.

The through hole 1309 may be formed by etching the anodic oxide film 1300 in the vertical direction after the above-described anodization film 1300 and the pores 1303 are formed.

Since the through holes 1309 are formed by etching, the through holes 1309 can be formed more stably than by simply expanding the pores 1303 to form the through holes 1309.

In other words, when the through holes 1309 are formed by expanding the pores 1303, the side surfaces of the pores 1303 may collapse, such that the shape of the through holes 1309 may be distorted. May cause damage.

However, as the through holes 1309 are formed by etching, the through holes 1309 may be easily formed without damaging the side surfaces of the pores 1303, thereby causing damage to the through holes 1309. You can prevent that.

In view of preventing vacuum leakage in the adsorption region 1310, the penetration hole 1309 is preferably distributed in the center of the adsorption region 1310.

On the other hand, looking at the transfer head 1000 as a whole, the transmission hole 1309 may vary in size and number depending on the position of each adsorption area 1310.

When the suction port is located at the center of the transfer head 1000, the vacuum pressure decreases toward the edge of the transfer head 1000, resulting in unevenness of the vacuum pressure between the adsorption regions 1310. In this case, the size of the adsorption area formed by the transmission hole 1309 in the adsorption area 1310 located at the edge of the transfer head 1000 is set in the adsorption area 1310 located at the center side of the transfer head 1000. It may be formed larger than the size of the adsorption area formed by the transmission hole (1309).

As such, by varying the size of the adsorption area of the permeation hole 1309 according to the position of the adsorption region 1310, a uniform vacuum adsorption force can be provided by eliminating the unevenness of vacuum pressure generated between the adsorption regions 1310.

In Fig. 11B, a modification of the transfer head shown in Fig. 9 is shown. In the transfer head illustrated in FIG. 11B, an adsorption groove 1310 is further formed below the adsorption region 1310 of the anodic oxide film 1300.

The suction groove 1310 has a larger horizontal area than the above-described pores 1303 or the through holes 1309, but has a smaller area than the horizontal area of the upper surface of the micro LED 100.

Through this, it is possible to further increase the vacuum adsorption area for the micro LED 100, and to provide a uniform vacuum adsorption area for the micro LED 100 through the adsorption groove 1310.

The adsorption groove 1310 may be formed by etching a portion of the anodization film 1300 to a predetermined depth after the aforementioned anodization film 1300 and the pores 1303 are formed.

In Fig. 11C, a modification of the transfer head shown in Fig. 9 is shown. In the transfer head illustrated in FIG. 11C, a mounting groove 1311 is further formed at a lower portion of the adsorption region 1310 of the anodic oxide film 1300.

The seating recess 1311 has a horizontal area more than the horizontal area of the top surface of the micro LED 100. As a result of the micro LED 100 being inserted into the seating groove 1311 and seated therein, it is possible to limit the position variation of the micro LED 100 when the transfer head 1000 moves.

The mounting groove 1311 may be formed by etching a portion of the anodization film 1300 to a predetermined depth after the aforementioned anodization film 1300 and the pores 1303 are formed.

In Fig. 12 a modification of the transfer head according to Fig. 9 is shown. In the transfer head illustrated in FIG. 12, a doped groove 1313 is further formed below the non-adsorption region 1330 of the anodic oxide film 1300.

The evacuation groove 1313 has a function of preventing the interference with the micro LED 100 of the non-adsorption target when the transfer head 1000 descends and vacuum-adsorbs the micro LED 100 at a specific position, column, or row. do.

Due to the structure of the escape groove 1313, the protrusion 1315 is provided at the lower portion of the adsorption region 1310.

The protrusion 1315 is a portion which protrudes further downward in the vertical direction than the escape groove 1313, and the micro LED 100 is adsorbed from the bottom of the protrusion 1315.

The horizontal area of the protrusion 1315 is formed to be equal to or larger than the horizontal area of the adsorption area 1310.

The horizontal area of the protrusion 1315 is formed larger than the horizontal area of the upper surface of the micro LED 100, and the adsorption area 1310 is formed smaller than the width of the upper surface of the micro LED 100, thereby preventing leakage of a vacuum.

The horizontal area of the escape groove 1313 is larger than the horizontal area of the at least one micro LED 100.

12 illustrates that the horizontal area in the transverse groove 1313 has a horizontal area equal to two times the horizontal area of the two micro LEDs 100 and the horizontal pitch interval between the micro LEDs 100. have.

Through this, in order to vacuum-adsorb the micro LED 100 to be adsorbed, it is possible to prevent the interference with the micro LED 100 to be adsorbed when the transfer head 1000 is lowered.

As shown in FIG. 12, the micro LEDs 100 to be adsorbed on the growth substrate 101 are the micro LEDs 100 at positions 1, 4, 7, and 10 with respect to the left side of the drawing. The transfer head 1000 having the configuration of 1313 vacuum-adsorbs only the micro LEDs 100 corresponding to the first, fourth, seventh, and tenth positions without interference with the micro LEDs 100 that are not adsorption targets. Can be transferred.

Third embodiment

Hereinafter, a third embodiment of the present invention will be described. However, embodiments described below will be described based on the characteristic elements compared to the first embodiment, and descriptions of the same or similar elements as the first embodiment will be omitted.

FIG. 13 is a view illustrating a micro LED transfer head 1000 according to a third exemplary embodiment of the present invention, and FIG. 14 is a view showing specific means of the first and second porous members of FIG. 13.

The micro LED transfer head 1000 according to the third embodiment is characterized in that the porous member 1100 of the first embodiment includes a double structure of the first and second porous members 1500 and 1600.

The second porous member 1600 is provided on the first porous member 1500. The first porous member 1500 is configured to perform a vacuum suction function of the micro LED 100, and the second porous member 1600 is positioned between the suction chamber 1200 and the first porous member 1500 to suction. The vacuum pressure of the chamber 1200 is transmitted to the first porous member 1500.

The first and second porous members 1500 and 1600 may have different porosity characteristics. For example, the first and second porous members 1500 and 1600 have different characteristics in the arrangement and size of the pores, the material and the shape of the porous member.

Looking at the arrangement of pores, one of the first, second porous member (1500, 1600) may have a uniform arrangement of pores and the other may be a disordered arrangement of pores.

Looking at the size of the pore, any one of the first, second porous member (1500, 1600) may be larger in size than the other.

The pore size may be an average size of the pores, and may be a maximum size of the pores. In terms of the material of the porous member, if one is composed of one material of organic, inorganic (ceramic), metal, hybrid type porous material, the other material is different from any one material, organic, inorganic (ceramic), It may be selected from metal, hybrid porous material. Looking at the shape of the porous member, the shape of the first, second porous member (1500, 1600) may be configured differently from each other.

As such, the function of the transfer head 1000 may be varied by varying the arrangement, the size, the material, and the shape of the pores of the first and second porous members 1500 and 1600, and the first and second porous members 1500, And may perform a complementary function for each of 1600. The number of porous members is not limited to two, like the first and second porous members, and each porous member is included in the range of the third embodiment if the porous members have a complementary function.

Referring to FIG. 14, the first porous member 1500 may be an anodized film having pores formed by anodizing a metal. The first porous member 1500 may be provided in the configuration of the above-described second embodiment and variations thereof. The second porous member 1600 may be formed of a porous support having a function of supporting the first porous member 1500. If the second porous member 1600 is capable of achieving the function of supporting the first porous member 1500, the material is not limited, and the configuration of the porous member 1100 of the aforementioned first embodiment may be included. . The second porous member 1600 may be formed of a hard porous support having an effect on preventing the central sag of the first porous member 1500. For example, the second porous member 1600 may be a porous ceramic material.

In the case of the porous ceramic material, the size of the porous pores is non-uniform, and the pores are formed in various directions, so that the vacuum pressure depending on the position may be non-uniform. On the other hand, since the anodization film is uniform in size and the direction of the pores is formed in one direction (for example, up and down direction), the vacuum pressure is uniformly formed even though the positions are different.

Therefore, as described above, when the first porous member 1500 is made of an anodized film having pores, and the second porous member 1600 is made of a porous ceramic material, because of the characteristics of the pores of the anodized film described above, It is advantageous in terms of uniformity of vacuum pressure than that of ceramics alone.

On the other hand, the first porous member 1500 is provided in the configuration of the above-described second embodiment and variations thereof, the second porous member 1600 is the contact between the first porous member 1500 and the micro LED (100) It may consist of a porous buffer for buffering. If the second porous member 1600 is configured to achieve a function of buffering the first porous member 1500, the material is not limited, and the structure of the porous member 1100 of the above-described first embodiment may be included. . The second porous member 1600 may be formed on the micro LED 100 when the first porous member 1500 is in contact with the micro LED 100 and adsorbs the micro LED 100 by vacuum. It may be comprised of a soft porous buffer that helps to prevent abutment and damaging the micro LED 100. For example, the second porous member 1600 may be a porous elastic material such as a sponge.

Fourth embodiment

Hereinafter, a fourth embodiment of the present invention will be described. However, embodiments described below will be described based on the characteristic elements compared to the first embodiment, and descriptions of the same or similar elements as the first embodiment will be omitted.

15 is a view of a transfer head according to a fourth embodiment of the present invention.

In the micro LED transfer head 1000 according to the fourth embodiment, the porous member 1100 of the first embodiment includes a triple structure of the first to third porous members 1700, 1800, and 1900. do.

The second porous member 1800 is provided on the upper portion of the first porous member 1700, and the third porous member 1900 is provided on the upper portion of the second porous member 1800. The first porous member 1700 is configured to perform a function of vacuum suction of the micro LED 100. At least one of the second porous member 1800 and the third porous member 1900 may be a hard porous support and the other may be composed of a soft porous buffer.

By the above configuration, it is possible to vacuum suction the micro LED 100, to prevent the central deflection phenomenon of the first porous member 1700, as well as to prevent damage to the micro LED (100). Have

Fifth Embodiment

Hereinafter, a fifth embodiment of the present invention will be described. However, embodiments described below will be described based on the characteristic elements compared to the first embodiment, and descriptions of the same or similar elements as the first embodiment will be omitted.

16 is a view showing a transfer head according to a fifth embodiment of the present invention, Figure 17 is a view showing an embodiment of the protruding dam of the fifth embodiment.

The micro LED transfer head 1000 according to the fifth embodiment is characterized in that it comprises a protruding dam 2000 in the lower portion of the porous member 1100 of the first embodiment.

The material of the protruding dam 2000 may be formed of a photoresist (including PR, dry film PR) or a metal, and the material may be formed on the surface of the porous member 1100 at a predetermined height.

The cross-sectional shape of the protruding portion of the protruding dam 2000 includes all of the protruding shapes, such as quadrangular, circular, and triangular.

The cross-sectional shape of the protruding portion of the protruding dam 2000 may be configured in consideration of the shape of the micro LED 100.

For example, if the micro LED 100 has a lower structure than the upper part, the cross-sectional shape of the protruding portion of the protruding dam 2000 has a narrower structure than the upper part of the protruding dam 2000 and the micro LED 100. It is more advantageous in terms of preventing interference of the liver.

Referring to FIG. 16, the cross-sectional shape of the protruding portion of the protruding dam 2000 has a tapered shape downward.

When the transfer head 1000 descends to the adsorption position for vacuum adsorption of the micro LED 100 positioned on the growth substrate 101, the porous member 1100 may be caused by a driving error of the driving means of the transfer head 1000. And the micro LED 100 may come into contact with each other to damage the micro LED 100.

In order to prevent damage to the micro LED 100, the lower surface of the porous member 1100 and the upper surface of the micro LED 100 should be spaced apart from each other at a position where the transfer head 1000 adsorbs the micro LED 100. . However, when there is a gap between the lower surface of the porous member 1100 and the micro LED 100, a greater vacuum pressure is required than when the two are in contact with each other.

However, according to the configuration of the protruding dam 2000 of the transfer head 1000 of the fifth embodiment, by reducing the amount of air flowing into the adsorption region 1110 from the peripheral area, the protruding dam 2000 is not provided. In comparison, the porous member 1100 may vacuum-adsorb the micro LED 100 even by a relatively smaller vacuum pressure.

On the other hand, when the protruding length of the protruding dam 2000 is made larger than the height of the micro LED 100, the protruding dam 2000 is formed on the growth substrate 101 when the transfer head 1000 is at the bottom dead center. Even if in contact, the bottom surface of the porous member 1100 is not in contact with the top surface of the micro LED (100).

As described above, the protrusion dam 2000 is in contact with the growth substrate 101 while the bottom surface of the porous member 1100 is spaced apart from the top surface of the micro LED 100. Compared to the structure spaced apart from each other, the protruding dam 2000 more effectively blocks the inflow of air from the surrounding area to the adsorption area 1110, so that the porous member 1100 vacuum-adsorbs the micro LED 100 more easily. You can do it.

In addition, even if movement of the adjacent micro LEDs 100 is minutely present due to air flow, the position change of the micro LEDs 100 may be physically limited by the configuration of the protruding dam 2000.

A shielding part 3000 for forming a non-adsorption area is formed on the upper surface of the porous member 1100, and an area 4000 communicating with the suction chamber 1200 is formed between the shielding parts 3000. 1310).

The shielding portion is not limited in material, shape, and thickness as long as it can perform a function of blocking pores on the surface of the porous member 1100. Preferably, the photoresist may be further formed of a PR (including dry film PR) or a metal material. When the porous member 1100 is formed of an anodized film, the shield may be a barrier layer or a metal base material.

17 illustrates a bottom surface of the porous member 1100 provided with the protruding dam 2000.

Referring to FIG. 17, the protruding dam 2000 is formed entirely except for the opening 2100 serving as the adsorption region 1110.

The opening 2100 of the protrusion dam 2000 may be formed at the same pitch interval as that of the micro LED 100 on the growth substrate 101.

The openings 2100 of the protruding dam 2000 may be arranged in a matrix of m × n, as shown in FIG. 17.

In the case where the column pitch spacing of the micro LED 100 on the growth substrate 101 is P (n) and the row pitch spacing is P (m), the column pitch spacing of the opening 2100 of the protruding dam 2000 is shown. Is P (n), and the row direction pitch interval is P (m).

In this case, the opening 2100 of the protruding dam 2000 has a 1: 1 correspondence with the micro LED 100 to be absorbed.

In the case of the present invention, since the cross-sectional shape of the micro LED 100 is circular, the opening 2100 is also formed in a circular shape as shown in FIG. 17, but the shape of the opening 2100 is the shape of the micro LED 100. It may vary depending on the cross-sectional shape. For example, when the cross-sectional shape of the micro LED 100 is rectangular, the shape of the opening 2100 may also have a rectangular shape corresponding to the cross-sectional shape of the micro LED 100.

18 is characterized in that the porous member 1100 according to the fifth embodiment is formed of an anodizing film 1300 having pores formed by anodizing a metal.

Referring to FIG. 18, the protruding dam 2000 is formed on the lower surface of the anodization film 1300. In the anodization film 1300, the barrier layer 3001 on the upper surface thereof is removed to form the adsorption region 1110, and the barrier layer 3001 on the upper surface thereof is not removed, thereby forming the non-adsorption region 1130. Partitioned into parts.

The barrier layer functions as the shielding portion 3000 shown in FIG. 16, and the region where the barrier layer 3001 is not formed serves as the area 4000 in communication with the suction chamber 1200 shown in FIG. 16. do.

19A and 19B, a modification of the transfer head according to the fifth embodiment of the present invention is shown. The protruding dam 2000 is formed only in the periphery of the micro LED 100 to be adsorbed in the adsorption region 1110. 19A and 18B, the micro LEDs 100 to be adsorbed are the micro LEDs 100 at positions 1, 4, 7, and 10, and the transfer head 1000 is positioned above 1, 4, When vacuum-adsorbing the micro LEDs 100 at the seventh and tenth positions, the protruding dam 2000 has a function of blocking air from entering the respective adsorption regions 1110 from the peripheral region. Here, the shape of the protruding dam 2000 formed on the bottom surface of the anodization film 1300 may be configured in the shape of the protruding dam 2000 of FIG. 17.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art various modifications of the present invention without departing from the spirit and scope of the invention described in the claims below. Or it may be modified.

50: Collector 60: Fluid
100: micro LED 101: growth substrate
102: first semiconductor layer 130: active layer
104: second semiconductor layer 106: first contact electrode
107: second contact electrode 301: display substrate
310: active layer 311: buffer layer
313: gate insulating film 315: interlayer insulating film
317: planarization layer 320: gate electrode
330a: source electrode 330b: drain electrode
400: bank layer 410: first bank layer
420: second bank layer 510: first electrode
520: passivation layer 530: second electrode
550: conductive layer
1000: transfer head 1100: porous member
1110: adsorption zone 1130: non-adsorption zone
1200: suction chamber 1300: anodization film
1303: Qigong

Claims (7)

In the micro LED adsorption method comprising a porous member having pores, wherein the porous member has an adsorption region for adsorbing the micro LED and a non-adsorption region for not adsorbing the micro LED.
Micro LED adsorption method using a transfer head, characterized in that the micro LED is adsorbed in the adsorption area while the transfer head is relatively moved horizontally. The method of claim 1,
The micro LED adsorbed in the adsorption region is a micro LED adsorption method using a transfer head, characterized in that the good quality micro LED. The method of claim 1,
The transfer head is a micro-LED adsorption method using a transfer head, characterized in that for adsorbing the micro LED from the upper part of the collector in which the good micro LED is collected. The method of claim 1,
The micro LED adsorbed in the adsorption region is a micro LED adsorption method using a transfer head, characterized in that the matrix form. The method of claim 1,
The transfer head is a micro LED adsorption method using a transfer head, characterized in that for adsorbing the micro LED in the upper part of the fluid floated good quality micro LED. The method of claim 1,
The transfer head is a micro LED adsorption method using a transfer head, characterized in that for relatively reciprocating movement. The method of claim 1,
And the transfer head is rotated and relatively moved.

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