KR102498037B1 - Micro led adsorption body - Google Patents

Abstract

The present invention relates to a micro LED adsorption body adopting a vacuum adsorption structure that can be used for micro LED transfer and solves the problems of the micro LED transfer head proposed so far.

Description

Micro LED adsorber {MICRO LED ADSORPTION BODY}

The present invention relates to an adsorbent for adsorbing a micro LED.

In the current display market, while LCD is still the mainstream, OLED is rapidly replacing LCD and emerging as the mainstream. In a situation where display companies are rushing to participate in the OLED market, Micro LED (hereinafter referred to as ‘Micro LED’) display is emerging as another next-generation display. While the core materials of LCD and OLED are liquid crystal and organic materials, respectively, micro LED display is a display that uses 1-100 micrometer (㎛) LED chips themselves as light emitting materials.

In 1999, when Cree applied for a patent on "a micro-light emitting diode array with improved light extraction" (Registration Patent Publication Registration No. 0731673), the term micro LED appeared, and related research papers were published one after another, research and development this is being done As a task to be solved in order to apply micro LED to a display, it is necessary to develop a customized micro chip based on a flexible material/device for a micro LED device, transfer of a micrometer size LED chip and accurate display pixel electrode. Skills for mounting are required.

In particular, in relation to the transfer of the micro LED device to the display substrate, as the size of the LED decreases to 1 to 100 micrometers (μm), conventional pick and place equipment cannot be used. There is a need for a transfer head technology that transfers with higher precision. Regarding the transfer head technology, several structures have been proposed as described below, but each proposed technology has several disadvantages.

Luxvue of the United States proposed a method of transferring micro LEDs using an electrostatic head (Patent Publication No. 2014-0112486, hereinafter referred to as 'Prior Invention 1'). The transfer principle of the prior invention 1 is the principle of generating adhesion to the micro LED by a charging phenomenon by applying a voltage to the head part made of silicon. This method may cause a problem of damage to the micro LED due to a charging phenomenon caused by a voltage applied to the head when inducing a static electricity.

X-Celeprint of the United States proposed a method of transferring micro LEDs on a wafer to a desired substrate by applying a transfer head made of an elastic polymer material (Patent Publication No. 2017-0019415, hereinafter referred to as 'Prior Invention 2'). box). This method has no problem with LED damage compared to the electrostatic head method, but the adhesive force of the elastic transfer head must be greater than the adhesive force of the target substrate during the transfer process to stably transfer the micro LED, and additional processes for electrode formation are required. There are downsides. In addition, it is also a very important factor to continuously maintain the adhesive force of the elastic polymer material.

Korea Photonics Technology Institute proposed a method of transferring micro LEDs using a ciliary adhesive structure head (Registration Patent Publication No. 1754528, hereinafter referred to as 'Prior Invention 3'). However, the prior invention 3 has a disadvantage that it is difficult to manufacture the adhesive structure of the cilia.

The Korea Institute of Machinery and Materials proposed a method of transferring micro LEDs by coating an adhesive on a roller (Registered Patent Publication Registration No. 1757404, hereinafter referred to as 'Prior Invention 4'). However, the prior invention 4 requires continuous use of an adhesive and has a disadvantage that the micro LED may be damaged when the roller is pressed.

Samsung Display has proposed a method of transferring micro LEDs to an array substrate by electrostatic induction by applying a negative voltage to the first and second electrodes of the array substrate while the array substrate is immersed in a solution (Public Patent Publication No. 10- 2017-0026959, hereinafter referred to as 'Prior Invention 5'). However, Prior Invention 5 has a disadvantage in that a separate solution is required and a drying process is required in that the micro LED is immersed in the solution and transferred to the array substrate.

LG Electronics has proposed a method of disposing a head holder between a plurality of pickup heads and a substrate and providing a degree of freedom to the plurality of pickup heads by deforming the shape by movement of the plurality of pickup heads (Public Patent Publication No. 10). -2017-0024906, hereinafter referred to as 'Prior Invention 6'). However, prior invention 6 has a disadvantage in that a separate process of applying the bonding material to the pickup heads is required in that the micro LED is transferred by applying a bonding material having adhesive strength to the adhesive surfaces of the plurality of pickup heads.

In order to solve the above problems of the prior inventions, it is necessary to improve the above-mentioned disadvantages while adopting the basic principles adopted by the prior inventions as they are. There is a limit to improving the shortcomings while doing it. Accordingly, the applicant of the present invention does not stop at improving the disadvantages of the prior art, but intends to propose a new method that was not considered at all in the prior inventions.

Registered Patent Publication No. 0731673 Publication of Patent Publication No. 2014-0112486 Publication of Patent Publication No. 2017-0019415 Registered Patent Publication No. 1754528 Registered Patent Publication No. 1757404 Publication No. 10-2017-0026959 Publication No. 10-2017-0024906

Accordingly, an object of the present invention is to solve the problems of the micro LED transfer head proposed so far and to provide a micro LED adsorption body adopting a vacuum adsorption structure that can be used for micro LED transfer.

In order to achieve the object of the present invention, the micro LED adsorber according to the present invention is a porous member having pores; and a conductive layer formed on the surface of the porous member, wherein static electricity on the surface is removed through the conductive layer.

On the other hand, in order to achieve the object of the present invention, the micro LED adsorber according to the present invention, a porous member having pores; a vertical conducting portion formed in the pores of the porous member; and a horizontal conductive part connected to the vertical conductive part, wherein static electricity on a surface is removed through the vertical conductive part and the horizontal conductive part.

In addition, the conductive layer is characterized in that the pores are not blocked.

In addition, the micro LED in close contact with the surface of the conductive layer is adsorbed to the transfer head by a vacuum applied to the pore.

In addition, the porous member includes an anodic oxide film.

In addition, the porous member includes a porous ceramic.

As described above, the micro LED transfer system according to the present invention can transfer the micro LED more efficiently by effectively removing static electricity that hinders adsorption and desorption when adsorbing and detaching the micro LED.

1 is a diagram showing a micro LED to be adsorbed in embodiments of the present invention.
2 is a view of a micro LED structure transferred and mounted on a display board according to embodiments of the present invention.
3 is a view of the micro LED adsorber according to the first embodiment.
4 is a view of a micro LED adsorption body according to a second embodiment.
5 is an enlarged view of part 'A' of FIG. 4;
FIG. 6 is a view showing a state in which the micro LED adsorber of FIG. 4 adsorbs the micro LED.
7 and 8a and b are diagrams showing modified examples of the second embodiment.
Fig. 9 is a view of a micro LED adsorber according to a third embodiment;
Fig. 10 is a diagram showing a modified example of the third embodiment;
11 is a view of a micro LED adsorption body according to a fourth embodiment.
12 is a view of a micro LED adsorber according to a fifth embodiment.
13A is an enlarged view of part 'A' of FIG. 12;
FIG. 13B is a view viewed from the top of the anodic oxide film of part 'A' of FIG. 13A.
14 and 15 are diagrams showing modified examples of the fifth embodiment.
Fig. 16 is a diagram of a micro LED adsorption body of a sixth embodiment;

The following merely illustrates the principles of the invention. Therefore, those skilled in the art can invent various devices that embody the principles of the invention and fall within the concept and scope of the invention, even though not explicitly described or shown herein. In addition, it should be understood that all conditional terms and embodiments listed in this specification are, in principle, expressly intended only for the purpose of making the concept of the invention understood, and are not limited to such specifically listed embodiments and conditions. .

The above objects, features and advantages will become more apparent through the following detailed description in conjunction with the accompanying drawings, and accordingly, those skilled in the art to which the invention belongs will be able to easily implement the technical idea of the invention. .

Embodiments described in this specification will be described with reference to sectional views and/or perspective views, which are ideal exemplary views of the present invention. Thicknesses of films and regions and diameters of holes shown in these drawings are exaggerated for effective description of the technical content. The shape of the illustrative drawings may be modified due to manufacturing techniques and/or tolerances. In addition, the number of micro LEDs shown in the drawing is shown in the drawing by way of example only. Therefore, embodiments of the present invention are not limited to the specific shapes shown, but also include changes in shapes generated according to manufacturing processes.

In describing various embodiments, the same names and the same reference numbers will be given to components performing the same functions even if the embodiments are different. In addition, configurations and operations already described in other embodiments will be omitted for convenience.

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram showing a plurality of micro LEDs 100 to be adsorbed by a micro LED adsorber according to a preferred embodiment of the present invention. The micro LED 100 is fabricated and positioned on the growth substrate 101 .

The growth substrate 101 may be formed of a conductive substrate or an insulating substrate. For example, the growth substrate 101 may be formed of at least one of sapphire, SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ O ₃ .

The micro LED 100 includes a first semiconductor layer 102, a second semiconductor layer 104, an active layer 103 formed between the first semiconductor layer 102 and the second semiconductor layer 104, and a first contact electrode ( 106) and a second contact electrode 107.

The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (CVD). It can be formed using methods such as plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE).

The first semiconductor layer 102 may be implemented as, for example, a p-type semiconductor layer. The p-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, GaN, AlN, AlGaN, InGaN, InN , InAlGaN, AlInN, etc., and a p-type dopant such as Mg, Zn, Ca, Sr, or Ba may be doped. The second semiconductor layer 104 may include, for example, an n-type semiconductor layer. The n-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), for example, GaN, AlN, AlGaN, InGaN, InNInAlGaN , AlInN, etc., and an n-type dopant such as Si, Ge, or Sn may be doped.

However, the present invention is not limited thereto, and the first semiconductor layer 102 may include an n-type semiconductor layer, and the second semiconductor layer 104 may include a p-type semiconductor layer.

The active layer 103 is a region where electrons and holes recombine, and as electrons and holes recombine, the active layer 103 transitions to a lower energy level and can generate light having a wavelength corresponding thereto. The active layer 103 may include, for example, a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and may be formed by a single It may be formed in a quantum well structure or a multi quantum well (MQW) structure. In addition, a quantum wire structure or a quantum dot structure may be included.

A first contact electrode 106 may be formed on the first semiconductor layer 102 , and a second contact electrode 107 may be formed on the second semiconductor layer 104 . The first contact electrode 106 and/or the second contact electrode 107 may include one or more layers and may be formed of various conductive materials including metals, conductive oxides and conductive polymers.

A plurality of micro LEDs 100 formed on the growth substrate 101 are cut using a laser or the like along a cutting line or individually separated through an etching process, and a plurality of micro LEDs 100 are separated into a growth substrate by a laser lift-off process It can be made to be separable from (101).

In FIG. 1, 'p' means the pitch interval between the micro LEDs 100, 's' means the separation distance between the micro LEDs 100, and 'w' means the width of the micro LEDs 100.

2 is a view showing a micro LED structure formed by being transferred to and mounted on a display substrate by a micro LED adsorber according to a preferred embodiment of the present invention.

The display substrate 300 may include various materials. For example, the display substrate 300 may be made of a transparent glass material containing SiO ₂ as a main component. However, the display substrate 300 is not necessarily limited thereto, and may be formed of a transparent plastic material and have solubility. The plastic materials are insulating organic materials such as polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethyelenen napthalate (PEN), polyethylene terephthalate (PET, polyethyleneterepthalate), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate: CAP) may be an organic material selected from the group consisting of.

In the case of a bottom emission type displaying an image in the direction of the display substrate 300, the display substrate 300 must be formed of a transparent material. However, in the case of a top emission type in which an image is displayed in a direction opposite to that of the display substrate 300, the display substrate 300 does not necessarily need to be made of a transparent material. In this case, the display substrate 300 may be formed of metal.

When the display substrate 300 is formed of metal, the display substrate 300 may include at least one selected from the group consisting of iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), an Invar alloy, an Inconel alloy, and a Kovar alloy. It may include, but is not limited thereto.

The display substrate 300 may include a buffer layer 311 . The buffer layer 311 may provide a flat surface and may block penetration of foreign substances or moisture. For example, the buffer layer 311 is made of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride, or an organic material such as polyimide, polyester, or acryl. It may contain, and may be formed of a plurality of laminates among the materials exemplified.

The thin film transistor (TFT) may include an active layer 310, a gate electrode 320, a source electrode 330a, and a drain electrode 330b.

Hereinafter, a case in which the thin film transistor (TFT) is a top gate type in which an active layer 310, a gate electrode 320, a source electrode 330a, and a drain electrode 330b are sequentially formed will be described. However, the present embodiment is not limited thereto, and various types of thin film transistors (TFTs) such as a bottom gate type may be employed.

The active layer 310 may include a semiconductor material, for example, amorphous silicon or polycrystalline silicon. However, the present embodiment is not limited thereto, and the active layer 310 may contain various materials. As an optional embodiment, the active layer 310 may contain an organic semiconductor material or the like.

As another optional embodiment, the active layer 310 may contain an oxide semiconductor material. For example, the active layer 310 is made of metal elements of groups 12, 13, and 14, such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), cadmium (Cd), and germanium (Ge), and combinations thereof. It may contain oxides of selected materials.

A gate insulating layer 313 is formed on the active layer 310 . The gate insulating layer 313 serves to insulate the active layer 310 and the gate electrode 320 . The gate insulating layer 313 may be formed of a multilayer or a single layer of an inorganic material such as silicon oxide and/or silicon nitride.

The gate electrode 320 is formed on the gate insulating layer 313 . The gate electrode 320 may be connected to a gate line (not shown) for applying an on/off signal to the thin film transistor TFT.

The gate electrode 320 may be made of a low-resistance metal material. The gate electrode 320 is made of, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg) in consideration of adhesion to adjacent layers, surface flatness and processability of the stacked layer, and the like. , Gold (Au), Nickel (Ni), Neodymium (Nd), Iridium (Ir), Chromium (Cr), Lithium (Li), Calcium (Ca), Molybdenum (Mo), Titanium (Ti), Tungsten (W) , Copper (Cu) may be formed as a single layer or multiple layers.

An interlayer insulating film 315 is formed on the gate electrode 320 . The interlayer insulating film 315 insulates the source electrode 330a and the drain electrode 330b from the gate electrode 320 . The interlayer insulating film 315 may be formed of a multi-layer or single-layer film made of an inorganic material. For example, the inorganic material may be a metal oxide or a metal nitride, and specifically, the inorganic material may be silicon oxide (SiO ₂ ), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ), titanium oxide ( TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO ₂ ), or zinc oxide (ZrO ₂ ).

A source electrode 330a and a drain electrode 330b are formed on the interlayer insulating layer 315 . The source electrode 330a and the drain electrode 330b may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), or neodymium (Nd). ), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu) in a single layer or multi-layer can be formed The source electrode 330a and the drain electrode 330b are electrically connected to the source and drain regions of the active layer 310 , respectively.

The planarization layer 317 is formed on the thin film transistor (TFT). The planarization layer 317 is formed to cover the thin film transistor (TFT), eliminates the step caused by the thin film transistor (TFT), and flattens the upper surface. The planarization layer 317 may be formed of a single layer or multiple layers of a film made of an organic material. Organic materials include general purpose polymers such as Polymethylmethacrylate (PMMA) and Polystylene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, arylether polymers, amide polymers, fluorine polymers, and p-xylene polymers. It may include polymers, vinyl alcohol-based polymers, and blends thereof. Also, the planarization layer 317 may be formed of a composite laminate of an inorganic insulating film and an organic insulating film.

A first electrode 510 is positioned on the planarization layer 317 . The first electrode 510 may be electrically connected to the thin film transistor (TFT). Specifically, the first electrode 510 may be electrically connected to the drain electrode 330b through a contact hole formed in the planarization layer 317 . The first electrode 510 may have various shapes, for example, may be patterned and formed in an island shape. A bank layer 400 defining a pixel area may be disposed on the planarization layer 317 . The bank layer 400 may include a concave portion in which the micro LED 100 is accommodated. The bank layer 400 may include, for example, a first bank layer 410 forming a concave portion. The height of the first bank layer 410 may be determined by the height and viewing angle of the micro LED 100 . The size (width) of the concave portion may be determined by the resolution and pixel density of the display device. In one embodiment, the height of the micro LED 100 may be greater than the height of the first bank layer 410 . The concave portion may have a square cross-sectional shape, but embodiments of the present invention are not limited thereto, and the concave portion may have various cross-sectional shapes such as polygonal, rectangular, circular, conical, elliptical, and triangular shapes.

The bank layer 400 may further include a second bank layer 420 over the first bank layer 410 . The first bank layer 410 and the second bank layer 420 have a step difference, and the width of the second bank layer 420 may be smaller than that of the first bank layer 410 . A conductive layer 550 may be disposed on the second bank layer 420 . The conductive layer 550 may be disposed in a direction parallel to the data line or the scan line and electrically connected to the second electrode 530 . However, the present invention is not limited thereto, and the second bank layer 420 may be omitted, and the conductive layer 550 may be disposed on the first bank layer 410 . Alternatively, the second bank layer 420 and the conductive layer 500 may be omitted, and the second electrode 530 may be formed over the entire substrate 300 as a common electrode common to the pixels P. The first bank layer 410 and the second bank layer 420 may include a material that absorbs at least a portion of light, a light reflection material, or a light scattering material. The first bank layer 410 and the second bank layer 420 may include an insulating material that is translucent or opaque to visible light (eg, light in a wavelength range of 380 nm to 750 nm).

For example, the first bank layer 410 and the second bank layer 420 may be formed of polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone, polyvinylbutyral, polyphenylene ether, polyamide, or polyether. Etherimide, norbornene system resin, methacrylic resin, thermoplastic resin such as cyclic polyolefin, epoxy resin, phenol resin, urethane resin, acrylic resin, vinyl ester resin, imide resin, urethane resin, urea It may be formed of a thermosetting resin such as resin or melamine resin, or an organic insulating material such as polystyrene, polyacrylonitrile, or polycarbonate, but is not limited thereto.

As another example, the first bank layer 410 and the second bank layer 420 may be formed of an inorganic insulating material such as an inorganic oxide or inorganic nitride such as SiOx, SiNx, SiNxOy, AlOx, TiOx, TaOx, or ZnOx. It is not limited to this. In one embodiment, the first bank layer 410 and the second bank layer 420 may be formed of an opaque material such as a black matrix material. Insulative black matrix materials include organic resins, glass paste and resins or pastes containing black pigments, metal particles such as nickel, aluminum, molybdenum and alloys thereof, metal oxide particles (e.g., chromium oxide), or metal nitride particles (eg, chromium nitride) and the like. In a modified example, the first bank layer 410 and the second bank layer 420 may be a distributed Bragg reflector (DBR) having high reflectivity or a mirror reflector formed of metal.

A micro LED 100 is disposed in the concave portion. The micro LED 100 may be electrically connected to the first electrode 510 in the concave portion.

The micro LED 100 emits light having wavelengths such as red, green, blue, and white, and white light can be implemented by using a fluorescent material or combining colors. The micro LED 100 has a size of 1 μm to 100 μm. The micro LEDs 100 are picked up on the growth substrate 101 by the transfer head according to the embodiment of the present invention and transferred to the display substrate 300 individually or in plurality, thereby forming a concave portion of the display substrate 300. can be accepted in

The micro LED 100 includes a p-n diode, a first contact electrode 106 disposed on one side of the p-n diode, and a second contact electrode 107 disposed on the opposite side of the first contact electrode 106. The first contact electrode 106 may be connected to the first electrode 510 , and the second contact electrode 107 may be connected to the second electrode 530 .

The first electrode 510 may include a reflective film formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof, and a transparent or translucent electrode layer formed on the reflective film. The transparent or translucent electrode layer is indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ; indium oxide), indium gallium It may include at least one selected from the group including indium gallium oxide (IGO) and aluminum zinc oxide (AZO).

A passivation layer 520 surrounds the micro LED 100 in the recess. The passivation layer 520 covers the concave portion and the first electrode 510 by filling the space between the bank layer 400 and the micro LED 100 . The passivation layer 520 may be formed of an organic insulating material. For example, the passivation layer 520 may be formed of acrylic, poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, acrylate, epoxy, and polyester, but is limited thereto. It is not.

The passivation layer 520 is formed at a height not covering the top of the micro LED 100, for example, the second contact electrode 107, so that the second contact electrode 107 is exposed. A second electrode 530 electrically connected to the exposed second contact electrode 107 of the micro LED 100 may be formed on the passivation layer 520 .

The second electrode 530 may be disposed on the micro LED 100 and the passivation layer 520 . The second electrode 530 may be formed of a transparent conductive material such as ITO, IZO, ZnO, or In ₂ O ₃ .

Example 1

3 is a view showing a state in which the micro LED adsorber 1000 according to the first preferred embodiment of the present invention adsorbs the micro LED 100 in a vacuum. The micro LED adsorber 1000 according to the first embodiment of the present invention includes a porous member 1100 having pores and a conductive layer 1001 formed on a surface of the porous member 1100 .

A conductive layer 1001 is provided below the porous member 1100 . The material of the conductive layer 1001 is not limited as long as it is an electrically conductive material. The conductive layer 1001 may be deposited and formed on the surface of the porous member 1100 through a sputtering process.

The conductive layer 1001 may be formed on the entire lower surface of the porous member 1100 or only on a part of the entire lower surface. In addition, the conductive layer 1001 may block pores formed on the lower surface of the porous member 1100 or may be formed in a configuration that does not block pores of the porous member 1100 . In addition, the conductive layer 1001 may be formed through a combination thereof.

In the case of adsorbing the micro LED 100 using electrostatic force, static electricity should be actively induced, but in the case of not using electrostatic force, the electrostatic force is a negative thing to be removed in adsorbing the micro LED 100. Since the micro LED adsorber according to the first embodiment of the present invention uses the porous member 1100 having pores to adsorb and desorb the micro LED by suction force, the micro LED adsorber has a negative factor that must be removed static electricity. do.

As the conductive layer 1001 is provided on the surface of the porous member 1100, it is possible to prevent static electricity from being generated on the surface of the micro LED adsorbent 1000, and even if static electricity is generated, it is possible to remove the generated static electricity. . Through this, when the micro LED 100 is adsorbed or desorbed by suction force, malfunction of adsorption and desorption can be prevented.

According to the configuration in which the conductive layer 1001 is formed on the surface of the porous member 1100 without blocking the pores formed on the surface of the porous member 1100, the micro LED 100 and the vacuum suction body 1000 in contact with Since holes communicating with the pores of the porous member 1100 are also provided in the conductive layer 1001 on the adhesive surface, the micro LED 100 is formed by applying a vacuum to the pores of the porous member 1100 or releasing the vacuum applied to the pores. It can adsorb or release adsorption.

The micro LED adsorber 1000 according to the first preferred embodiment is a transfer head that transfers from a first substrate (eg, the growth substrate 101) to a second substrate (eg, the display substrate 300). can

A vacuum chamber 1200 is provided above the porous member 1100 . The vacuum chamber 1200 is connected to a vacuum port for supplying or releasing a vacuum. The vacuum chamber 1200 functions to apply a vacuum to the pores of the porous member 1100 or release the vacuum applied to the pores according to the operation of the vacuum port. The structure for coupling the vacuum chamber 1200 to the porous member 1100 is not limited as long as it is suitable for preventing leakage of vacuum to other parts when applying a vacuum to the porous member 1100 or releasing the applied vacuum. .

When the micro LED 100 is vacuum adsorbed, the vacuum applied to the vacuum chamber 1200 is transferred to the plurality of pores of the porous member 1100, and a vacuum adsorption force to the micro LED 100 is generated. Meanwhile, when the micro LED 100 is detached, as the vacuum applied to the vacuum chamber 1200 is released, the vacuum is also released in the plurality of pores of the porous member 1100, so that the vacuum adsorption force for the micro LED 100 is removed. .

The porous member 1100 is composed of a material containing a plurality of pores therein, and may be configured in the form of powder, thin film/thick film, and bulk having a porosity of about 0.2 to 0.95 in a regular arrangement or disordered pore structure. . The pores of the porous member 1100 can be classified according to their size into micro pores with a diameter of 2 nm or less, meso pores with a diameter of 2 to 50 nm, and macro pores with a diameter of 50 nm or more. contains at least some The porous member 1100 can be classified into organic, inorganic (ceramic), metal, and hybrid porous materials according to their components. The porous member 1100 includes an anodic oxide film in which pores are formed in a predetermined arrangement. Porous member 1100 can be powder, coating film, bulk in terms of shape, and in the case of powder, various shapes such as spherical, hollow sphere, fiber, tube, etc. are possible, and there are cases where the powder is used as it is, but it is used as a starting material. It is also possible to manufacture and use a coating film or a bulk form.

When the pores of the porous member 1100 have a disordered pore structure, an air flow path connecting the top and bottom of the porous member 1100 is formed while a plurality of pores are connected to each other inside the porous member 1100. On the other hand, when the pores of the porous member 1100 have a vertical pore structure, the inside of the porous member 1100 is penetrated through the upper and lower portions of the porous member 1100 by the vertical pores to form an air flow path. make it possible

The porous member 1100 includes an adsorption region 1310 that adsorbs the micro LED 100 and a non-adsorption region 1330 that does not adsorb the micro LED 100 . The adsorption area 1310 is an area where the vacuum of the vacuum chamber 1200 is transferred to adsorb the micro LED 100, and the non-adsorption area 1330 is an area where the vacuum of the vacuum chamber 1200 is not transferred. 100) is not adsorbed.

The non-adsorption area 1330 may be implemented by forming a shield on at least a portion of the surface of the porous member 1100 . The shielding portion as described above is formed to block pores formed on at least a portion of the surface of the porous member 1100 . The shielding portion may be formed on at least some of the upper and lower surfaces of the porous member 1100, and in particular, when the porous member 1100 has a disordered pore structure, both the upper and lower surfaces of the porous member 1100. can be formed

The material, shape, and thickness of the shielding unit are not limited as long as it can perform a function of blocking pores on the surface of the porous member 1100 . Preferably, it may be additionally formed of a photoresist (including PR, dry film PR) or a metal material, and may also be formed by its own configuration constituting the porous member 1100. Here, as a self-configuration of the porous member 1100, for example, when the porous member 1100 to be described later is composed of an anodic oxide film, the shielding portion may be a barrier layer or a metal base material.

The vacuum adsorber 1000 may be provided with a monitoring unit for monitoring the degree of vacuum in the vacuum chamber 1200 . The monitoring unit monitors the degree of vacuum formed in the vacuum chamber 1200, and the controller may control the degree of vacuum of the vacuum chamber 1200 according to the degree of vacuum of the vacuum chamber 1200. When the vacuum degree of the vacuum chamber 1200 in the monitoring unit is formed at a vacuum degree lower than the preset vacuum degree range, the control unit determines that some of the micro LEDs 100 to be vacuum-adsorbed to the porous member 1100 are not vacuum-adsorbed. It is judged as, or it is judged that there is a leakage of vacuum in some parts, and the re-operation of the vacuum adsorber 1000 may be commanded. As such, the vacuum adsorber 1000 transfers the micro LED 100 without error according to the degree of vacuum inside the vacuum chamber 1200 .

In addition, a buffer member may be provided in the vacuum adsorber 1000 to buffer contact between the porous member 1100 and the micro LED 100. The material of the buffer member is not limited as long as it has elastic restoring force while buffering the contact between the porous member 1100 and the micro LED 100. The buffer member may be formed between the porous member 1100 and the vacuum chamber 1200, but the installation position of the buffer member is not limited thereto. As long as it is a position capable of buffering contact between the porous member 1100 and the micro LED 100, the buffer member may be installed at any position of the vacuum suction body 1000.

Example 2

Hereinafter, look at the second embodiment of the present invention.

Figure 4 is a view showing a micro LED adsorber 1000 according to a second preferred embodiment of the present invention, Figure 5 is an enlarged view of 'A' part of Figure 4, Figure 6 is a second embodiment It is a diagram showing a state in which the micro LED adsorber 1000 vacuum adsorbs the micro LED 100 according to FIG.

The micro LED adsorber 1000 according to the second embodiment is characterized in that it includes an anodic oxidation film 1300 having pores formed by anodic oxidation of a metal.

A conductive layer 1001 is provided below the anodic oxide film 1300 . The material of the conductive layer 1001 is not limited as long as it is an electrically conductive material. The conductive layer 1001 may be deposited and formed on the surface of the porous member 1100 through a sputtering process.

The conductive layer 1001 may be formed on the entire lower surface of the anodic oxide film 1300 or only on a part of the entire lower surface. In addition, the conductive layer 1001 may block pores formed on the lower surface of the anodic oxide film 1300 or may be formed so as not to block pores of the anodic oxide film 1300 . In addition, the conductive layer 1001 may be formed through a combination thereof.

In the case of adsorbing the micro LED 100 using electrostatic force, static electricity should be actively induced, but in the case of not using electrostatic force, the electrostatic force is a negative thing to be removed in adsorbing the micro LED 100. Since the micro LED adsorber according to the second embodiment of the present invention adsorbs and desorbs the micro LED by suction force using the anodic oxide film 1300 having pores, the micro LED adsorber has a negative factor in which static electricity must be removed. do.

As the conductive layer 1001 is provided on the surface of the anodic oxide film 1300, it is possible to prevent static electricity from being generated on the surface of the micro LED adsorber 1000, and even if static electricity is generated, it is possible to remove the generated static electricity. . Through this, when the micro LED 100 is adsorbed or desorbed by suction force, malfunction of adsorption and desorption can be prevented.

According to the configuration in which the conductive layer 1001 is formed on the surface of the anodic oxide film 1300 without blocking the pores formed on the surface of the anodic oxide film 1300, the vacuum adsorber 1000 in contact with the micro LED 100 Since holes communicating with the pores of the anodic oxide film 1300 are also provided in the conductive layer 1001 on the adhesive surface, a vacuum is applied to the pores of the anodic oxide film 1300 or the vacuum applied to the pores is released to form the micro LED 100. It can adsorb or release adsorption.

The anodic oxide film 1300 means a film formed by anodic oxidation of a base metal, and the pores 1303 mean holes formed in the process of forming the anodic oxide film 1300 by anodic oxidation of a metal. For example, when the base metal is aluminum (Al) or an aluminum alloy, when the base metal is anodized, an anodic oxide film 1300 made of anodized aluminum oxide (Al ₂ O ₃ ) is formed on the surface of the base metal. As described above, the formed anodic oxide film 1300 is divided into a barrier layer 1301 in which pores 1303 are not formed and a porous layer 1305 in which pores 1303 are formed. The barrier layer 1301 is located on top of the base material, and the porous layer 1305 is located on top of the barrier layer 1301. As such, when the base material is removed from the base material on which the anodic oxide film 1300 having the barrier layer 1301 and the porous layer 1305 is formed, only the anodic oxide film 1300 made of aluminum oxide (Al ₂ O ₃ ) is formed. will remain

The anodic oxide film 1300 has pores 1303 having a regular arrangement while being formed in a vertical shape with a uniform diameter. Therefore, when the barrier layer 1301 is removed, the pores 1303 have a structure vertically penetrating upward and downward, and through this, it is easy to form a vacuum pressure in a vertical direction.

The inside of the anodic oxidation film 1300 can form an air flow path in a vertical form by the vertical pores 1303 . The inner width of the pore 1303 has a size of several nm to several hundreds of nm. For example, when the size of the micro LED to be vacuum adsorbed is 30 μm x 30 μm and the internal width of the pores 1303 is several nm, the micro LED 100 is formed using approximately tens of millions of pores 1303. can be vacuum adsorbed. On the other hand, when the size of the micro LED to be vacuum adsorbed is 30 μm x 30 μm and the internal width of the pores 1303 is several hundred nm, the micro LED 100 is formed using approximately tens of thousands of pores 1303. vacuum adsorption is possible. In the case of the micro LED 100, the first semiconductor layer 102, the second semiconductor layer 104, the active layer 103 formed between the first semiconductor layer 102 and the second semiconductor layer 104, As it is composed of only the first contact electrode 106 and the second contact electrode 107, it is relatively light, so it is possible to vacuum adsorption using tens of thousands to tens of millions of pores 1303 of the anodic oxide film 1300.

A vacuum chamber 1200 is provided above the anodic oxide film 1300 . The vacuum chamber 1200 is connected to a vacuum port supplying vacuum. The vacuum chamber 1200 functions to apply vacuum to or release the vacuum from the plurality of vertical pores of the anodic oxide film 1300 according to the operation of the vacuum port.

When the micro LED 100 is adsorbed, the vacuum applied to the vacuum chamber 1200 is transferred to the plurality of pores 1303 of the anodic oxide film 1300 to provide vacuum adsorption force to the micro LED 100 . Meanwhile, when the micro LED 100 is detached, as the vacuum applied to the vacuum chamber 1200 is released, the vacuum is also released in the plurality of pores 1303 of the anodic oxide film 1300, thereby increasing the vacuum adsorption force for the micro LED 100. this is removed

The anodic oxidation film 1300 includes an adsorption area 1310 for vacuum adsorbing the micro LED 100 and a non-adsorption area 1330 for not adsorbing the micro LED 100 . The adsorption area 1310 is an area where the vacuum of the vacuum chamber 1200 is transferred to vacuum-adsorb the micro LED 100, and the non-adsorption area 1330 is a micro LED as the vacuum of the vacuum chamber 1200 is not transferred. This is a region in which (100) is not adsorbed.

Preferably, the adsorption region 1310 may be a region through which the upper and lower portions of the pores 1303 penetrate, and the non-adsorption region 1330 may be a region in which at least one of the upper and lower portions of the pores 1303 is closed. there is.

The non-adsorption area 1330 may be implemented by forming a shielding part on at least a portion of the surface of the anodic oxide film 1300 . The shielding portion as described above is formed to block the entrance of the pores 1303 exposed to at least a portion of the surface of the anodic oxide film 1300 . The shielding part may be formed on at least a part of the upper and lower surfaces of the anodic oxide layer 1300 . The material, shape, and thickness of the shielding unit are not limited as long as it can perform a function of blocking the entrance of the pores 1303 exposed to the surface of the porous member 1100 . Preferably, the turn portion may be additionally formed of photoresist (including PR, dry film PR) or a metal material, and may be a barrier layer 1301.

The non-adsorption area 1330 may be formed by closing any one of the upper and lower portions of the vertical pores 1303 by the barrier layer 1301 formed during the manufacture of the anodic oxide film 1310, and the adsorption area ( 1310 may be formed such that the upper and lower portions of the vertical pores 1303 pass through each other by removing the barrier layer 1301 by a method such as etching.

In addition, since the pores 1303 penetrating up and down are formed as a part of the barrier layer 1301 is removed, the thickness of the anodic oxide film 1300 in the adsorption area 1310 is equal to the thickness of the anodic oxide film 1300 in the non-adsorption area 1330. ) is less than the thickness of

5 shows that the barrier layer 1301 is located on top of the anodic oxide film 1300 and the porous layer 1305 with pores 1303 is located on the bottom, but the barrier layer 1301 is the anodic oxide film 1300 ), the anodic oxidation film 1300 shown in FIG. 5 may be inverted upside down to form a non-adsorption area 1330.

On the other hand, although the non-adsorption area 1330 has been described as having either the top or bottom of the pores 1303 closed by the barrier layer 1301, the opposite side not closed by the barrier layer 1301 is a separate A coating layer may be added so that both the upper and lower surfaces are closed. In configuring the non-adsorption area 1330, the configuration in which both the upper and lower surfaces of the anodic oxidation film 1300 are closed is higher than the configuration in which at least one of the upper and lower surfaces of the anodic oxidation film 1300 is closed. ) It is advantageous in that it can reduce the possibility of foreign substances remaining in the pores 1303.

7 shows a modified example of the micro LED adsorber 1000 shown in FIG. 6 . In the adsorbent 1000 shown in FIG. 7, a support 1307 for reinforcing the strength of the anodic oxide film 1300 is additionally formed on the upper part of the non-adsorption area 1330. For example, the support part 1307 may be a base material made of metal. A base material of metal material (for example, aluminum or aluminum alloy) may serve as the support part 1307 while being provided on top of the barrier layer 1301 without being removed during anodization.

Referring to FIG. 7, in the non-adsorption area 1330, a base material 1307 made of metal, a barrier layer 1301, and a porous layer 1305 in which pores 1303 are formed are all provided, and the adsorption area 1310 ) is formed so that the top and bottom of the pores 1303 penetrate as the base material 1307 made of metal and the barrier layer 1301 are removed. A base material 1307 made of metal is provided in the non-adsorption area 1330 to secure the rigidity of the anodic oxide film 1300 . The size of the vacuum adsorber 1000 composed of the anodic oxide film 1300 can be enlarged as the strength of the anodic oxide film 1300, which has relatively low strength, can be increased by the configuration of the support part 1307 as described above. there is.

In FIG. 8 (a), a modified example of the adsorbent 1000 shown in FIG. 6 is shown. In the adsorbent 1000 shown in FIG. 8(a), in the adsorption area 1310 of the anodic oxide film 1300, a penetration hole 1309 is added in addition to the naturally formed pores 1303 of the anodic oxide film 1300. is formed with The penetration hole 1309 is formed to pass through the upper and lower surfaces of the anodic oxide film 1300 . The diameter of the penetration hole 1309 is larger than that of the pore 1303. By the configuration in which the penetration hole 1309 having a larger diameter than the diameter of the pore 1303 is formed, compared to a configuration in which the micro LED 100 is vacuum-sucked only through the pore 1303, the vacuum for the micro LED 100 adsorption area can be increased.

The penetration hole 1309 may be formed by etching the anodic oxide film 1300 in a vertical direction after the anodic oxide film 1300 and the pores 1303 are formed. In terms of preventing vacuum leakage from the adsorption area 1310 , it is preferable that the permeation holes 1309 are distributed in the center of the adsorption area 1310 .

On the other hand, when looking at the overall viewpoint of the adsorption body 1000, the size and number of the permeation holes 1309 may vary according to the position of each adsorption area 1310. When the vacuum port is located in the center of the vacuum adsorption body 1000, the vacuum pressure decreases toward the edge of the vacuum adsorption body 1000, and thus unevenness of vacuum pressure between the adsorption regions 1310 may occur. In this case, the size of the adsorption area formed by the permeation hole 1309 in the adsorption area 1310 located toward the edge of the vacuum adsorption body 1000 is determined by the adsorption area 1310 located toward the center of the vacuum adsorption body 1000. ) may be formed to be larger than the size of the adsorption area formed by the penetration hole 1309 in. In this way, by changing the size of the adsorption area of the permeation hole 1309 according to the position of the adsorption region 1310, the non-uniformity of the vacuum pressure generated between the adsorption regions 1310 can be eliminated and a uniform vacuum adsorption force can be provided.

In FIG. 8(b), a modified example of the adsorbent 1000 shown in FIG. 6 is shown. In the adsorbent 1000 shown in FIG. 8(b), an adsorption groove (1309 in FIG. 8(b)) is additionally formed in the lower part of the adsorption area 1310 of the anodic oxidation film 1300. The adsorption groove (1309 in FIG. 8(b)) has a larger horizontal area than the aforementioned pore 1303 or the penetration hole (1309 in FIG. 8(a)) but smaller than the horizontal area of the upper surface of the micro LED 100. have an area Through this, the vacuum adsorption area for the micro LED 100 can be further increased, and a uniform vacuum adsorption area for the micro LED 100 can be provided through the adsorption groove (1309 in FIG. 8(b)). . The suction groove (1309 in FIG. 8(b)) may be formed by etching a portion of the anodic oxide film 1300 to a predetermined depth after the aforementioned anodic oxide film 1300 and pores 1303 are formed.

3rd embodiment

Hereinafter, look at the third embodiment of the present invention.

9 is a view showing a micro LED adsorber 1000 according to a third preferred embodiment of the present invention.

The micro LED adsorber 1000 according to the third embodiment is characterized in that it includes a dual structure of first and second porous members 1500 and 1600.

A conductive layer 1001 is provided below the first porous member 1500 . The conductive layer 1001 formed on the surface of the first porous member 1500 is formed in a form that does not block pores formed on the surface of the first porous member 1500 .

A second porous member 1600 is provided above the first porous member 1500 . The first porous member 1500 is a component that performs a function of vacuum adsorbing the micro LED 100, and the second porous member 1600 is located between the vacuum chamber 1200 and the first porous member 1500 to vacuum. It serves to transfer the vacuum pressure of the chamber 1200 to the first porous member 1500.

The first and second porous members 1500 and 1600 may have different porosity characteristics. For example, the first and second porous members 1500 and 1600 have different characteristics in terms of arrangement and size of pores, material of the porous member, and shape.

In terms of the arrangement of pores, one of the first and second porous members 1500 and 1600 may have a regular arrangement of pores, and the other may have a disordered arrangement of pores. In terms of pore size, any one of the first and second porous members 1500 and 1600 may have a larger pore size than the other one. Here, the size of the pores may be an average size of pores or a maximum size among pores. In terms of the material of the porous member, if one is composed of one of organic, inorganic (ceramic), metal, and hybrid porous materials, the other is a material different from any one material, such as organic, inorganic (ceramic), It may be selected from among metals and hybrid porous materials. In terms of the shape of the porous member, the first and second porous members 1500 and 1600 may have different shapes.

In this way, the function of the vacuum adsorber 1000 can be varied by differentiating the arrangement, size, material and shape of the pores of the first and second porous members 1500 and 1600, and the first and second porous members 1500 , 1600), it is possible to perform complementary functions for each of them. The number of porous members is not limited to two like the first and second porous members, and if each porous member has a function complementary to each other, having more than that is also included in the scope of the third embodiment.

Referring to FIG. 10 , the first porous member 1500 may have the configuration of the above-described second embodiment and its modifications. A conductive layer 1001 is provided below the first porous member 1500 . The conductive layer 1001 is formed while having a predetermined thickness without blocking pores formed on the lower surface of the first porous member 1500 .

The second porous member 1600 may be composed of a porous support having a function of supporting the first porous member 1500 . As long as the second porous member 1600 has a structure capable of supporting the first porous member 1500, the material is not limited, and the structure of the porous member 1100 of the first embodiment described above may be included. . The second porous member 1600 may be formed of a rigid porous support having an effect of preventing central sagging of the first porous member 1500 . For example, the second porous member 1600 may be a porous ceramic material.

In the case of a porous ceramic material, the size of porous pores is non-uniform and pores are formed in various directions, so that vacuum pressure may be non-uniform depending on the location. Unlike this, since the size of the anodic oxide film is uniform and the pores are formed in one direction (eg, vertical direction), vacuum pressure is uniformly formed even if the location is different. Therefore, as described above, when the first porous member 1500 is composed of an anodic oxide film having pores and the second porous member 1600 is composed of a porous ceramic material, while maintaining the porosity of the adsorbent 1000, the rigidity is increased. It is possible to secure the uniformity of the vacuum pressure as well as to secure.

On the other hand, while the first porous member 1500 is provided with the configuration of the above-described second embodiment and its modifications, the second porous member 1600 is formed upon contact between the first porous member 1500 and the micro LED 100. It may be composed of a porous buffer for buffering it. As long as the second porous member 1600 has a structure that can achieve a function of buffering the first porous member 1500, there is no limitation on the material, and the structure of the porous member 1100 of the first embodiment described above may be included. . In the second porous member 1600, when the first porous member 1500 comes into contact with the micro LED 100 and vacuums the micro LED 100, the first porous member 1500 adheres to the micro LED 100. It may be composed of a soft, porous buffer that helps prevent contact and damage to the micro LED 100 . For example, the second porous member 1600 may be a porous elastic material such as a sponge.

Example 4

Hereinafter, look at the fourth embodiment of the present invention.

11 is a view showing a micro LED adsorber 1000 according to a fourth preferred embodiment of the present invention.

The micro LED adsorber 1000 according to the fourth embodiment is characterized in that it includes a triple structure of first, second, and third porous members 1700, 1800, and 1900.

A conductive layer 1001 is provided below the first porous member 1500 . The conductive layer 1001 is formed while having a predetermined thickness without blocking pores formed on the lower surface of the first porous member 1500 .

A second porous member 1800 is provided above the first porous member 1700 , and a third porous member 1900 is provided above the second porous member 1800 . The first porous member 1700 is a component that performs a function of vacuum adsorbing the micro LED 100 . At least one of the second porous member 1800 and the third porous member 1900 may be a hard porous support and the other may be a soft porous buffer.

The first porous member 1700 may be provided in the configuration of the second embodiment and its modified examples, and the second porous member 1800 is a hard material having an effect of preventing the central sagging of the first porous member 1500. It may be composed of a porous support (eg, a porous ceramic material), and the third porous member 1900 may be composed of a soft porous buffer (eg, a highly elastic and porous material such as a sponge material).

With the above configuration, it is possible to uniformly vacuum adsorb the plurality of micro LEDs 100, prevent central sagging of the first porous member 1700, and prevent damage to the micro LEDs 100. have an effect that can

Example 5

Hereinafter, look at the fifth embodiment of the present invention. The micro LED adsorbent 1000 according to the fifth embodiment of the present invention includes a porous member 1300 having pores, a vertical conductive part formed by vertically penetrating the porous member, and a horizontal conductive part connected to the vertical conductive part.

Through the configuration of the vertical conductive portion formed by vertically penetrating the porous member and the horizontal conductive portion connected to the vertical conductive portion and exposed to the surface side, it is possible to prevent static electricity from being generated on the surface of the micro LED adsorber 1000, and static electricity is generated. It is possible to remove generated static electricity even if it has been removed. Through this, when the micro LED 100 is adsorbed or desorbed by suction force, malfunction of adsorption and desorption can be prevented.

The configuration of the vertical conductive part formed in the pores of the porous member and the horizontal conductive part connected to the vertical conductive part and exposed to the surface side may be provided in the adsorption area 1310 and may be provided in the non-adsorption area 1330. However, according to the configuration in which the vertical conduction unit and the horizontal conduction unit are included in the adsorption area 1310, static electricity can be removed by applying electricity to the conduction layer 1001 while the micro LED 100 is adsorbed.

Referring to FIGS. 13A and 13B , the adsorption area 1310 includes a structure in which the barrier layer 1301 is removed and pores 1303 are penetrated through the top and bottom.

The adsorption area 1310 includes an adsorption part (a) and a conductive part (b).

The adsorbing part (a) is a part through which the pores 1303 penetrate upward and downward, and is a part that adsorbs the micro LED 100, and the conductive part (b) is a part made of a conductive material.

The horizontal conductive portion 1353 is formed on the opposite side of the adsorption surface on which the adsorber 1000 adsorbs the micro LED 100. The vertical conductive part 1351 is located in the adsorption area 1310 where the micro LED 100 is adsorbed. The vertical conductive part 1351 is formed by filling the pores 1303 of the anodic oxide film 1300, one end of which is integrally connected to the horizontal conductive part 1353, and the other end thereof is formed to be exposed to the adsorption surface of the micro LED 100. do.

Through this, the adsorption area 1310 adsorbs the micro LED 100 and at the same time, the vertical conductive part 1353 contacts the adsorption surface to generate and remove static electricity. ) can be checked.

FIG. 13B is a view from the top of the anodic oxide film 1300 of the 'A' portion of FIG. A non-adsorption area 1330 is formed by the barrier layer 1301 .

Continuing to refer to FIG. 13B , the horizontal conductive portion 1353 is configured to cover only a part of the pores 1303 penetrating upward and downward within the scope of the adsorption area 1310, and is not covered by the horizontal conductive portion 1353. The pores 1303 that do not have a function of adsorbing the micro LED 100.

In addition, a common conductive layer 1355 commonly connecting the horizontal conductive parts 1353 disposed side by side may be provided on one side of the anodic oxide film 1300 . A plurality of horizontal conductive parts 1353 are connected to one common conductive layer 1355. Through this configuration of the common conductive layer 1355, each horizontal conductive unit 1353 arranged side by side can be collectively connected.

14 shows a modified example of the micro LED adsorber 1000 shown in FIG. 12 . In the adsorbent 1000 shown in FIG. 14, a support portion 1307 for reinforcing the strength of the anodic oxide film 1300 is additionally formed on the upper part of the non-adsorption region 1330. For example, the support 1307 may be a base material made of metal. A base material of metal material (for example, aluminum or aluminum alloy) may serve as the support part 1307 while being provided on top of the barrier layer 1301 without being removed during anodization. Referring to FIG. 14, in the non-adsorption area 1330, a base material 1307 made of metal, a barrier layer 1301, and a porous layer 1305 in which pores 1303 are formed are all provided, and the adsorption area 1310 ) is formed so that the top and bottom of the pores 1303 penetrate as the base material 1307 made of metal and the barrier layer 1301 are removed. A base material 1307 made of metal is provided in the non-adsorption area 1330 to secure the rigidity of the anodic oxide film 1300 . As the strength of the relatively weak anodic oxide film 1300 can be increased by the configuration of the support part 1307 as above, the size of the micro LED adsorber 1000 composed of the anodic oxide film 1300 can be increased to a large area. can

FIG. 15 shows a modified example of the adsorbent 1000 shown in FIG. 12 . In the adsorbent 1000 shown in FIG. 15, a penetration hole 1309 is additionally formed in the adsorption area 1310 of the anodic oxide film 1300 in addition to the naturally formed pores 1303 of the anodic oxide film 1300. . The penetration hole 1309 is formed to pass through the upper and lower surfaces of the anodic oxide film 1300 . The diameter of the penetration hole 1309 is larger than that of the pore 1303. The penetration hole 1309 may be formed by etching the anodic oxide film 1300 in a vertical direction after the anodic oxide film 1300 and the pores 1303 are formed. Since the penetration hole 1309 is formed by etching, the penetration hole 1309 can be formed more stably than simply expanding the pore 1303 to form the penetration hole 1309 . In other words, when the penetration hole 1309 is formed by expanding the pore 1303, the side surface of the pore 1303 collapses, so that the shape of the penetration hole 1309 may be distorted. of damage may occur. However, as the penetration hole 1309 is formed by etching, the penetration hole 1309 can be easily formed without damaging the side surface of the pore 1303, and through this, damage to the penetration hole 1309 occurs. that can be prevented. Using such a penetration hole 1309, the formation of the vertical conductive portion 1351 can be more easily implemented, and the contact area between the micro LED 100 and the vertical conductive portion 1351 can be increased.

6th embodiment

Hereinafter, look at the sixth embodiment of the present invention.

16 is a view showing a micro LED adsorber 1000 according to a sixth preferred embodiment of the present invention.

The micro LED adsorber 1000 according to the sixth embodiment is characterized in that it includes a dual structure of first and second porous members 1500 and 1600. A second porous member 1600 is provided above the first porous member 1500 .

The first porous member 1500 performs a function of vacuum adsorbing the micro LED 100, and the second porous member 1600 is positioned between the vacuum chamber 1200 and the first porous member 1500 to form a vacuum chamber ( 1200) to transfer the vacuum pressure to the first porous member 1500.

The first porous member 1500 includes an anodic oxide film having pores formed by anodizing a metal. The first porous member 1500 may be provided with the configuration of the above-described first embodiment and its modifications.

The second porous member 1600 may be composed of a porous support having a function of supporting the first porous member 1500 . As long as the second porous member 1600 has a structure capable of supporting the first porous member 1500, the material is not limited, and the structure of the porous member 1100 of the first embodiment described above may be included. .

The second porous member 1600 may be formed of a rigid porous support having an effect of preventing central sagging of the first porous member 1500 . For example, the second porous member 1600 may be a porous ceramic material.

In the case of a porous ceramic material, the size of porous pores is non-uniform and pores are formed in various directions, so that vacuum pressure may be non-uniform depending on the location. Unlike this, since the size of the anodic oxide film is uniform and the pores are formed in one direction (eg, vertical direction), vacuum pressure is uniformly formed even if the location is different.

Therefore, as described above, when the first porous member 1500 is composed of an anodic oxide film having pores and the second porous member 1600 is composed of a porous ceramic material, while maintaining the porosity of the adsorbent 1000, the rigidity is increased. It is possible to secure the uniformity of the vacuum pressure as well as to secure.

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. Or it can be carried out by modifying.

100: micro LED 101: growth substrate
300: display board 1000: transfer head
1100: micro LED adsorption body 1110: adsorption area
1130: non-adsorption area 1300: anodic oxide film

Claims (6)

a porous member having pores; and
A conductive layer formed on the surface of the porous member; including,
The porous member is an anodic oxide film formed by anodizing a metal,
The porous member,
an adsorption area through which the top and bottom of the vertical pores are penetrated; and
A non-adsorption area in which one of the upper and lower portions of the vertical pore is closed,
By applying a vacuum to the pores or releasing the applied vacuum, the micro LED is adsorbed or the adsorption is released,
The micro LED adsorber, wherein static electricity on the surface of the porous member is removed through the conductive layer when the micro LED is adsorbed or the adsorption is released.
a porous member having pores;
A conductive layer formed on the surface of the porous member; including,
The porous member is an anodic oxide film formed by anodizing a metal,
The porous member,
an adsorption area formed to pass through the upper and lower surfaces of the anodic oxide film and composed of penetration holes having a larger diameter than the diameter of the pore;
A non-adsorption area in which at least one of the top and bottom of the pore is closed,
A vacuum is applied to the penetration hole or the applied vacuum is released to adsorb or release the adsorption of the micro LED,
The micro LED adsorber, wherein static electricity on the surface of the porous member is removed through the conductive layer when the micro LED is adsorbed or the adsorption is released.
According to claim 1,
The conductive layer does not block the pores, micro LED adsorbent.
According to claim 2,
The conductive layer does not block the transmission hole, the micro LED adsorber.
According to claim 1 or 2,
The non-adsorption area is formed by closing any one of the upper and lower portions of the vertical pores by the barrier layer formed during the manufacture of the anodic oxide film, the micro LED adsorber.
According to claim 2,
The penetration hole is formed by etching the anodic oxide film in a vertical direction, the micro LED adsorber.

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