KR20190109205A - A light converting resin composition, a light converting unit and a display device using the same - Google Patents
A light converting resin composition, a light converting unit and a display device using the same Download PDFInfo
- Publication number
- KR20190109205A KR20190109205A KR1020180106276A KR20180106276A KR20190109205A KR 20190109205 A KR20190109205 A KR 20190109205A KR 1020180106276 A KR1020180106276 A KR 1020180106276A KR 20180106276 A KR20180106276 A KR 20180106276A KR 20190109205 A KR20190109205 A KR 20190109205A
- Authority
- KR
- South Korea
- Prior art keywords
- ethoxy
- formula
- group
- acid
- resin composition
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 57
- 239000002096 quantum dot Substances 0.000 claims abstract description 131
- 229920005989 resin Polymers 0.000 claims abstract description 92
- 239000011347 resin Substances 0.000 claims abstract description 92
- 238000006243 chemical reaction Methods 0.000 claims abstract description 83
- 150000001875 compounds Chemical class 0.000 claims abstract description 59
- 239000011230 binding agent Substances 0.000 claims abstract description 56
- 239000000126 substance Substances 0.000 claims abstract description 36
- 239000004593 Epoxy Substances 0.000 claims abstract description 28
- 239000003446 ligand Substances 0.000 claims abstract description 28
- 229920005822 acrylic binder Polymers 0.000 claims abstract description 22
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 20
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- -1 2- {2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy Chemical group 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 41
- 125000004432 carbon atom Chemical group C* 0.000 claims description 36
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 28
- 239000002904 solvent Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 24
- 229920001187 thermosetting polymer Polymers 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 20
- 239000002253 acid Substances 0.000 claims description 18
- 125000002947 alkylene group Chemical group 0.000 claims description 17
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 229910052793 cadmium Inorganic materials 0.000 claims description 13
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 12
- 150000001412 amines Chemical class 0.000 claims description 12
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 12
- 150000002148 esters Chemical class 0.000 claims description 12
- ZEUUVJSRINKECZ-UHFFFAOYSA-N ethanedithioic acid Chemical compound CC(S)=S ZEUUVJSRINKECZ-UHFFFAOYSA-N 0.000 claims description 12
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 125000005647 linker group Chemical group 0.000 claims description 11
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 9
- 150000008064 anhydrides Chemical group 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- MCORDGVZLPBVJB-UHFFFAOYSA-N 2-(2-butoxyethoxy)acetic acid Chemical compound CCCCOCCOCC(O)=O MCORDGVZLPBVJB-UHFFFAOYSA-N 0.000 claims description 7
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- 239000000654 additive Substances 0.000 claims description 7
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- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 239000001384 succinic acid Substances 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 125000004434 sulfur atom Chemical group 0.000 claims description 5
- YHBWXWLDOKIVCJ-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]acetic acid Chemical compound COCCOCCOCC(O)=O YHBWXWLDOKIVCJ-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011521 glass Substances 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- CLLLODNOQBVIMS-UHFFFAOYSA-N 2-(2-methoxyethoxy)acetic acid Chemical compound COCCOCC(O)=O CLLLODNOQBVIMS-UHFFFAOYSA-N 0.000 claims description 3
- FGSBNBBHOZHUBO-UHFFFAOYSA-N 2-oxoadipic acid Chemical compound OC(=O)CCCC(=O)C(O)=O FGSBNBBHOZHUBO-UHFFFAOYSA-N 0.000 claims description 3
- MWEQRYNVQOHOMW-UHFFFAOYSA-N 4-[2-[2-[2-[2-[2-[2-[2-(2-ethoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]-4-oxobutanoic acid Chemical compound C(C)OCCOCCOCCOCCOCCOCCOCCOCCOC(CCC(=O)O)=O MWEQRYNVQOHOMW-UHFFFAOYSA-N 0.000 claims description 3
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- HCSBWUZDBWRBCM-UHFFFAOYSA-N COCCOCCOC(CC(=O)O)=O Chemical compound COCCOCCOC(CC(=O)O)=O HCSBWUZDBWRBCM-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 241000764773 Inna Species 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 3
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical group CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 claims description 2
- JDSHOZFGABGFJT-UHFFFAOYSA-N 3-[2-[2-[2-[2-[2-[2-[2-[2-(2-methylpropoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]ethoxy]-3-oxopropanoic acid Chemical compound C(C(C)C)OCCOCCOCCOCCOCCOCCOCCOCCOC(CC(=O)O)=O JDSHOZFGABGFJT-UHFFFAOYSA-N 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 2
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- 125000003277 amino group Chemical group 0.000 claims description 2
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- 125000002993 cycloalkylene group Chemical group 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- WFWZEGHBYIGCOQ-UHFFFAOYSA-N 2-[2-[2-(2-ethylhexoxy)ethoxy]ethoxy]acetic acid Chemical compound C(C)C(COCCOCCOCC(=O)O)CCCC WFWZEGHBYIGCOQ-UHFFFAOYSA-N 0.000 claims 1
- XUARGSTVFSLPEL-UHFFFAOYSA-N 4-[2-(2-methoxyethoxy)ethoxy]-4-oxobutanoic acid Chemical compound COCCOCCOC(=O)CCC(O)=O XUARGSTVFSLPEL-UHFFFAOYSA-N 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 6
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- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 36
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- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
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- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
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- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
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- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- DOIRQSBPFJWKBE-UHFFFAOYSA-N phthalic acid di-n-butyl ester Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
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- 238000010186 staining Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
본 발명은 광변환 수지 조성물 및 광변환 적층기재, 이를 이용한 화상표시장치에 관한 것이다.The present invention relates to a light conversion resin composition and a light conversion laminated substrate, and an image display device using the same.
발광 소자(Light Emitting Diode, LED)를 백라이트 유닛(Back Light Unit, BLU)으로 사용하는 LCD(Liquid Crystal Display) TV에서 LED BLU는 빛을 실제로 발하는 부분으로써 LCD TV에서 가장 중요한 부분 중에 하나이다.In liquid crystal display (LCD) TVs that use a light emitting diode (LED) as a back light unit (BLU), LED BLU is one of the most important parts of an LCD TV.
백색의 LED BLU를 형성하는 방법으로는 통상 적색(Red, R), 녹색(Green, G) 및 청색(Blue, B) LED 칩을 조합하여 백색의 LED BLU를 형성하거나, 청색 LED칩과 넓은 반치폭의 발광파장을 가진 황색(Yellow, Y) 형광체의 조합을 용하여 백색을 구현하고 있다.As a method of forming a white LED BLU, a combination of red (R, R), green (G), and blue (B) LED chips is usually used to form a white LED BLU, or a wide half width with a blue LED chip. White is realized by using a combination of yellow (Yellow, Y) phosphors having a light emission wavelength of.
하지만, 적색, 녹색, 청색의 LED 칩을 조합하는 경우에는 LED 칩의 개수 및 복잡한 공정에 따라 제조비용이 높은 문제가 있고, 청색 LED칩에 황색 형광체를 조합하는 경우에는, 녹색 및 적색의 파장구분이 되지 않아 색순도가 떨어지고, 이에 따른 색재현성 저하의 문제가 발생하고 있어, 최근에는 청색의 LED칩을 사용한 백라이트에 양자점이 포함된 광학필름을 적용하여 화상표시장치의 색재현성 및 휘도를 향상하고자 하고 있다.However, when combining red, green, and blue LED chips, there is a problem in that manufacturing cost is high depending on the number of LED chips and a complicated process, and when combining yellow phosphors on a blue LED chip, wavelengths of green and red are combined. Since the color purity is lowered and the color reproducibility is deteriorated, the optical film including the quantum dots is applied to a backlight using a blue LED chip, thereby improving color reproducibility and luminance of an image display device. have.
그러나 코팅 조성물 제조에 있어 극성이 매우 낮은 화합물의 리간드를 사용하여 톨루엔, 헥산, 클로로포름과 같은 용제의 사용이 불가피하여 작업자가 인체에 유해한 용제에 노출된 환경에서 작업을 실시해야 하는 문제가 있다. However, in the preparation of coating compositions, solvents such as toluene, hexane, and chloroform are inevitably used using ligands of very low polarity compounds, so that a worker has to work in an environment exposed to harmful solvents.
또한, 상기의 광학필름의 경우 양자점이 포함된 발광층 이외에 베리어층, 기재층 등 구조가 복잡해지고, 이에 따른 양자점의 발광휘도 저하가 발생하게 된다. 또한, 제조공정 중 너무 높은 온도로 필름 제작 시 양자점이 소광하는 문제점이 발생하며, 광학필름 형태로 가공하기 위해 낮은 공정온도에서 진행함에 따라 장기 신뢰성에 문제가 있어 이에 대한 개선이 요구되고 있다.In addition, in the case of the optical film, a structure such as a barrier layer, a base layer, etc., in addition to the light emitting layer including the quantum dots is complicated, thereby lowering the luminance of emitted light of the quantum dots. In addition, the problem that the quantum dot is extinguished when the film is produced at a high temperature during the manufacturing process, there is a problem in the long-term reliability as the process proceeds at a low process temperature in order to process the optical film form, there is a need for improvement.
대한민국 등록특허 제10-1718592호는 양자점; TiO2 코어부와, 상기 코어부의 표면 중 적어도 일부를 덮는 SiO2를 포함하는 쉘부를 포함하는 코어쉘 구조의 산란입자; 및 경화성 수지를 포함하는 양자점 조성물로서, 상기 산란입자는 상기 양자점 조성물의 고형분의 총 중량을 기준으로 5 중량% 이상 50 중량% 이하인 것인 양자점 조성물을 제공하고 있다.Republic of Korea Patent No. 10-1718592 is a quantum dot; Scattering particles of a core shell structure including a TiO 2 core part and a shell part including SiO 2 covering at least a portion of a surface of the core part; And a quantum dot composition comprising a curable resin, wherein the scattering particles are based on the total weight of the solid content of the quantum dot composition to provide a quantum dot composition of 5% by weight or more 50% by weight.
대한민국 등록특허 제10-1690624호는 고분자 수지에 복수의 비카드뮴계 양자점이 분산되며, 일면 또는 양면이 패턴화된 고분자 레진층; 상기 고분자 레진층의 일면에 형성된 제1 배리어 필름; 및 상기 고분자 레진층의 또 다른 일면에 형성된 제2 배리어 필름;을 포함하고, 상기 고분자 레진층의 하부면은 프리즘 패턴화 또는 렌즈 패턴화된 것이며, 상기 고분자 레진층의 하부면이 프리즘 패턴화인 경우 상기 프리즘 패턴의 피치는 20 내지 70㎛이고, 꼭지각도는 95 내지 120°이며, 상기 패턴의 단면은 삼각형이고, 상기 고분자 레진층의 하부면이 렌즈 패턴화인 경우 상기 렌즈 패턴의 피치는 20 내지 70㎛이고, 피치 대 높이의 비율은 4 : 1 내지 10 : 1이며, 상기 패턴의 단면은 반원형인 광학 시트를 제공하고 있다.Republic of Korea Patent No. 10-1690624 is a plurality of non-cadmium-based quantum dots dispersed in a polymer resin, one or both sides of the polymer resin layer patterned; A first barrier film formed on one surface of the polymer resin layer; And a second barrier film formed on another surface of the polymer resin layer, wherein the bottom surface of the polymer resin layer is prism patterned or lens patterned, and the bottom surface of the polymer resin layer is prism patterned. The pitch of the prism pattern is 20 to 70㎛, the vertex angle is 95 to 120 °, the cross section of the pattern is a triangle, the pitch of the lens pattern is 20 to 70 when the lower surface of the polymer resin layer is a lens patterning There is provided an optical sheet having a semi-circular cross section, wherein the ratio of pitch to height is 4: 1 to 10: 1, and the pattern is semicircular.
또한 상기의 광학시트의 경우 구조가 복잡해 지고, 이에 따른 양자점의 발광 휘도 저하 및 소성온도가 낮아 장기 신뢰성이 떨어지는 문제점이 발생하게 된다. In addition, in the case of the optical sheet, the structure is complicated, thereby lowering the emission luminance of the quantum dot and the firing temperature is low, thereby causing a problem of low long-term reliability.
본 발명은 상기와 같은 문제를 해결하기 위한 것으로서, 카도계 바인더 수지 및 에폭시를 함유하는 아크릴계 바인더 수지를 포함함으로써 휘도 및 장기 신뢰성이 우수한 광변환 수지 조성물 및 광변환 적층기재, 이를 이용한 화상표시장치를 제공하는 데 그 목적이 있다.The present invention is to solve the problems as described above, by including an acrylic binder resin containing a cardo-based binder resin and an epoxy, a light conversion resin composition and a light conversion laminated substrate having excellent brightness and long-term reliability, an image display device using the same The purpose is to provide.
또한, 본 발명은 발광 중심파장이 서로 50nm 이상 차이가 나고, 새로운 리간드를 도입한 양자점을 2종 이상 포함함으로써 우수한 분산성과 광학특성을 향상시킬 수 있는 광변환 수지 조성물 및 광변환 적층기재, 이를 이용한 화상표시장치를 제공하는 데 그 목적이 있다.In addition, the present invention is a light conversion resin composition and light conversion laminated substrate, which can improve the excellent dispersibility and optical properties by including two or more kinds of quantum dots in which the emission center wavelength is 50nm or more different from each other, and introduced a new ligand, using the same Its purpose is to provide an image display apparatus.
상기 목적을 달성하기 위한 본 발명에 따른 광변환 수지 조성물은 발광 중심파장이 서로 50nm 이상 차이가 나는 2종 이상의 양자점; 및 바인더 수지;를 포함하고, 상기 바인더 수지는 카도계 바인더 수지 및 에폭시 함유 아크릴계 바인더 수지를 포함하며, 상기 양자점은 표면에 배치되는 폴리에틸렌 글리콜계 리간드를 포함하고,상기 폴리에틸렌 글리콜계 리간드는 하기의 화학식 1-A로 표시되는 화합물을 포함하는 것을 특징으로 한다.The optical conversion resin composition according to the present invention for achieving the above object is two or more kinds of quantum dots that the emission center wavelength is different from each other by more than 50nm; And a binder resin; wherein the binder resin includes a cardo-based binder resin and an epoxy-containing acrylic binder resin, and the quantum dots include polyethylene glycol-based ligands disposed on a surface thereof, and the polyethylene glycol-based ligand is represented by the following chemical formula: It is characterized by including the compound represented by 1-A.
[화학식 1-A][Formula 1-A]
(상기 화학식 1-A에서,(In Chemical Formula 1-A,
R'는 화학식 1-1로 표시되고,R 'is represented by the formula 1-1,
[화학식 1-1][Formula 1-1]
상기 화학식 1-1에서, In Chemical Formula 1-1,
R1은 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이고, R1 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
R2는 화학식 1-2으로 표시되며,R2 is represented by the formula 1-2,
[화학식 1-2][Formula 1-2]
상기 화학식 1-2에서,In Chemical Formula 1-2,
A는 산소원자 또는 황원자이고,A is an oxygen atom or a sulfur atom,
R3는 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이며, R3 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
B는 머캅토(), 카르복실산(), 디티오아세트산(), 인산() 또는 아민(-NH2)이고,B is mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ) Or amine (-NH 2 ),
R“는 수소원자, 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄 알킬기 또는 탄소수 3 내지 20의 분지쇄 알킬기이고, R “is hydrogen atom, mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a straight chain alkyl group having 1 to 20 carbon atoms or a branched chain alkyl group having 3 to 20 carbon atoms,
k는 1 내지 100의 정수이며,k is an integer from 1 to 100,
l은 0 내지 1의 정수이고,l is an integer from 0 to 1,
m은 0 내지 10의 정수이다).m is an integer from 0 to 10).
본 발명에 따른 광변환 수지 조성물은 카도계 바인더 수지 및 에폭시를 함유하는 아크릴계 바인더 수지를 포함함으로써, 코팅층의 형성 온도를 100 내지 250도에서 효과적으로 가공할 수 있으며, 휘도 특성 및 장기 신뢰성이 우수한 효과가 있다.The photoconversion resin composition according to the present invention comprises an acrylic binder resin containing a cardo binder resin and an epoxy, so that the formation temperature of the coating layer can be effectively processed at 100 to 250 degrees, and the effect of excellent brightness characteristics and long-term reliability have.
또한, 본 발명에 따른 광변환 수지 조성물은 발광 중심파장이 서로 50nm 이상 차이가 나고, 새로운 리간드를 도입한 양자점을 2종 이상 포함함으로써 분산성 및 광학특성이 우수한 효과가 있다.In addition, the light conversion resin composition according to the present invention has a difference in emission center wavelength by 50 nm or more, and includes two or more kinds of quantum dots incorporating a new ligand, thereby providing excellent dispersibility and optical properties.
상기 광변환 수지 조성물로 제조된 광변환 적층기재 및 이를 이용한 화상 표시 장치는 신뢰성이 우수한 효과가 있다.The light conversion substrate and the image display device using the light conversion laminated substrate made of the light conversion resin composition has an excellent effect of reliability.
이하, 본 발명에 대하여 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명에서 어떤 부재가 다른 부재 "상에" 위치하고 있다고 할 때, 이는 어떤 부재가 다른 부재에 접해 있는 경우 뿐 아니라 두 부재 사이에 또 다른 부재가 존재하는 경우도 포함한다.In the present invention, when a member is located "on" another member, this includes not only when one member is in contact with another member but also when another member exists between the two members.
본 발명에서 어떤 부분이 어떤 구성요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다.In the present invention, when a part "includes" a certain component, this means that it may further include other components, without excluding the other components unless otherwise stated.
<< 광변환Light conversion 수지 조성물> Resin Composition>
본 발명의 광변환 수지 조성물은 발광 중심 파장이 서로 50nm 이상 차이가 나는 2종 이상의 양자점; 및 바인더 수지;를 포함하고, 상기 바인더 수지는 카도계 바인더 수지 및 에폭시 함유 아크릴계 바인더 수지를 포함하며, 상기 양자점은 표면에 배치되는 폴리에틸렌 글리콜계 리간드를 포함하고, 상기 폴리에틸렌 글리콜계 리간드는 하기의 화학식 1-A로 표시되는 화합물을 포함하는 것을 특징으로 한다.The photoconversion resin composition of the present invention comprises at least two quantum dots in which the emission center wavelengths differ from each other by 50 nm or more; And a binder resin, wherein the binder resin includes a cardo-based binder resin and an epoxy-containing acrylic binder resin, and the quantum dots include polyethylene glycol-based ligands disposed on a surface thereof, and the polyethylene glycol-based ligand is represented by the following chemical formula: It is characterized by including the compound represented by 1-A.
[화학식 1-A][Formula 1-A]
(상기 화학식 1-A에서,(In Chemical Formula 1-A,
R'는 화학식 1-1로 표시되고,R 'is represented by the formula 1-1,
[화학식 1-1][Formula 1-1]
상기 화학식 1-1에서, In Chemical Formula 1-1,
R1은 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이고, R1 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
R2는 화학식 1-2으로 표시되며,R2 is represented by the formula 1-2,
[화학식 1-2][Formula 1-2]
상기 화학식 1-2에서,In Chemical Formula 1-2,
A는 산소원자 또는 황원자이고,A is an oxygen atom or a sulfur atom,
R3는 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이며, R3 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
B는 머캅토(), 카르복실산(), 디티오아세트산(), 인산() 또는 아민(-NH2)이고,B is mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ) Or amine (-NH 2 ),
R“는 수소원자, 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄 알킬기 또는 탄소수 3 내지 20의 분지쇄 알킬기이고, R “is hydrogen atom, mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a straight chain alkyl group having 1 to 20 carbon atoms or a branched chain alkyl group having 3 to 20 carbon atoms,
k는 1 내지 100의 정수이며,k is an integer from 1 to 100,
l은 0 내지 1의 정수이고,l is an integer from 0 to 1,
m은 0 내지 10의 정수이다).m is an integer from 0 to 10).
양자점Quantum dots
본 발명에 따른 광변환 수지 조성물은 발광 중심파장이 서로 50nm 이상 차이가 나는 2종 이상의 양자점을 포함하고, 상기 양자점은 표면에 배치되는 폴리에틸렌 글리콜계 리간드를 포함하며, 상기 폴리에틸렌 글리콜계 리간드는 하기의 화학식 1-A로 표시되는 화합물을 포함한다.The photoconversion resin composition according to the present invention includes two or more kinds of quantum dots having different emission center wavelengths of 50 nm or more from each other, and the quantum dots include polyethylene glycol-based ligands disposed on a surface thereof. It includes a compound represented by the formula (1-A).
[화학식 1-A][Formula 1-A]
(상기 화학식 1-A에서,(In Chemical Formula 1-A,
R'는 화학식 1-1로 표시되고,R 'is represented by the formula 1-1,
[화학식 1-1][Formula 1-1]
상기 화학식 1-1에서, In Chemical Formula 1-1,
R1은 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이고, R1 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
R2는 화학식 1-2으로 표시되며,R2 is represented by the formula 1-2,
[화학식 1-2][Formula 1-2]
상기 화학식 1-2에서,In Chemical Formula 1-2,
A는 산소원자 또는 황원자이고,A is an oxygen atom or a sulfur atom,
R3는 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이며, R3 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
B는 머캅토(), 카르복실산(), 디티오아세트산(), 인산() 또는 아민(-NH2)이고,B is mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ) Or amine (-NH 2 ),
R“는 수소원자, 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄 알킬기 또는 탄소수 3 내지 20의 분지쇄 알킬기이고, R “is hydrogen atom, mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a straight chain alkyl group having 1 to 20 carbon atoms or a branched chain alkyl group having 3 to 20 carbon atoms,
k는 1 내지 100의 정수이며,k is an integer from 1 to 100,
l은 0 내지 1의 정수이고,l is an integer from 0 to 1,
m은 0 내지 10의 정수이다).m is an integer from 0 to 10).
본 발명의 광변환 수지 조성물에 포함되는 양자점은 나노 크기의 반도체 물질이다. 원자가 분자를 이루고, 분자는 클러스터(cluster)라고 하는 작은 분자들의 집합체를 구성하여 나노 입자를 이루는데, 이러한 나노 입자들이 특히 반도체의 특성을 띠고 있을 때 이를 양자점이라고 한다. 이러한 양자점은 외부에서 에너지를 받아 들뜬 상태에 이르면, 자체적으로 에너지 밴드 갭에 해당하는 에너지를 방출하는 특성을 가지고 있다. 요컨대, 본 발명의 광변환 수지 조성물은 이러한 양자점을 포함함으로써, 입사된 청색광원을 통해 녹색광 및 적색광으로의 광변환이 가능하다.The quantum dots included in the photoconversion resin composition of the present invention are nanoscale semiconductor materials. Atoms form molecules, and molecules form clusters of small molecules called clusters to form nanoparticles, which are called quantum dots, especially when they are characteristic of semiconductors. These quantum dots have the characteristic of emitting energy corresponding to the energy band gap when they reach the excited state from the outside. In short, the photoconversion resin composition of the present invention includes such a quantum dot, so that light conversion into green light and red light is possible through the incident blue light source.
상기 양자점은 광에 의한 자극으로 발광할 수 있는 것이라면 특별히 한정하지 않나, 비카드뮴계인 것이 바람직하며, 예컨대, II-VI족 반도체 화합물, III-V족 반도체 화합물, IV-VI족 반도체 화합물, 및 IV족 원소 또는 이를 포함하는 화합물로부터 선택되는 1종 이상을 사용할 수 있다.The quantum dot is not particularly limited as long as it can emit light by a stimulus caused by light, but is preferably a cadmium-based compound, for example, a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, and IV. One or more types selected from group elements or compounds containing the same can be used.
상기 II-VI족 반도체 화합물은 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe 및 이들의 혼합물로 이루어진 군에서 선택되는 삼원소 화합물; 및 CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, 및 이들의 혼합물로 이루어진 군에서 선택되는 사원소 화합물로 이루어진 군에서 선택되는 1종 이상일 수 있고, The II-VI semiconductor compound may be selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, and mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe And CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof, and at least one member selected from the group consisting of
상기 III-V족 반도체 화합물은 GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, 및 이들의 혼합물로 이루어진 군에서 선택되는 삼원소 화합물; 및 GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 사원소 화합물로 이루어진 군에서 선택되는 1종 이상일 수 있다.The group III-V semiconductor compound may be selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; Three-element compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; And one element selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. It may be abnormal.
상기 IV-VI족 반도체 화합물은 SnS, SnSe, SnTe, PbS, PbSe, PbTe, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물; SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, 및 이들의 혼합물로 이루어진 군에서 선택되는 삼원소 화합물; 및 SnPbSSe, SnPbSeTe, SnPbSTe, 및 이들의 혼합물로 이루어진 군에서 선택되는 사원소 화합물로 이루어진 군에서 선택되는 1종 이상일 수 있다.The group IV-VI semiconductor compound may be selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; A three-element compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And SnPbSSe, SnPbSeTe, SnPbSTe, and at least one member selected from the group consisting of an elemental compound selected from the group consisting of a mixture thereof.
상기 IV족 원소 또는 이를 포함하는 화합물은 Si, Ge, 및 이들의 혼합물로 이루어진 군에서 선택되는 원소 화합물; 및 SiC, SiGe, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물로 이루어진 군에서 선택되는 1종 이상일 수 있으나 이에 한정되지 않는다.The group IV element or the compound containing the same is an element compound selected from the group consisting of Si, Ge, and mixtures thereof; And it may be one or more selected from the group consisting of a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof, but is not limited thereto.
상기 양자점은 균질한(homogeneous) 단일 구조; 코어-쉘(core-shell) 구조, 그래디언트(gradient) 구조 등과 같은 이중 구조; 또는 이들의 혼합 구조일 수 있다. 예를 들어 상기 코어-쉘(core-shell)의 이중 구조에서, 각각의 코어(core)와 쉘(shell)을 이루는 물질은 상기 언급된 서로 다른 반도체 화합물로 이루어질 수 있다. 보다 구체적으로는, 상기 코어는 GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, 및 이들의 혼합물로 이루어진 군에서 선택되는 삼원소 화합물; 및 GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 사원소 화합물로 이루어진 군에서 선택되는 1종 이상의 물질을 포함할 수 있으나 이에 한정되는 것은 아니다. 상기 쉘은 ZnSe, ZnS 및 ZnTe로부터 선택되는 1종 이상의 물질을 포함할 수 있으나, 이에 한정되는 것은 아니다.The quantum dots are homogeneous single structures; Dual structures such as core-shell structures, gradient structures, and the like; Or a mixed structure thereof. For example, in the dual structure of the core-shell, the material forming each core and shell may be made of the above-mentioned different semiconductor compounds. More specifically, the core is a binary element selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; Three-element compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; And one element selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. It may include, but is not limited to, the above materials. The shell may include one or more materials selected from ZnSe, ZnS, and ZnTe, but is not limited thereto.
예를 들어, 코어-쉘 구조의 양자점은 InP/ZnS, InP/ZnSe, InP/GaP/ZnS, InP/ZnSe/ZnS, InP/ZnSeTe/ZnS 및 InP/MnSe/ZnS 등을 들 수 있다.For example, the quantum dots of the core-shell structure may include InP / ZnS, InP / ZnSe, InP / GaP / ZnS, InP / ZnSe / ZnS, InP / ZnSeTe / ZnS, InP / MnSe / ZnS, and the like.
상기 양자점은 습식 화학 공정(wet chemical process), 유기금속 화학증착 공정(MOCVD, metal organic chemical vapor deposition) 또는 분자선 에피텍시 공정(MBE, molecular beam epitaxy)에 의해 합성될 수 있으나 이에 한정되는 것은 아니다.The quantum dots may be synthesized by a wet chemical process, a metal organic chemical vapor deposition (MOCVD), or a molecular beam epitaxy (MBE), but are not limited thereto. .
본 발명에 있어서, 상기 양자점은 비카드뮴계 양자점일 수 있다. 구체적으로, 상기 양자점은 비카드뮴계 양자점을 포함할 수 있다.In the present invention, the quantum dot may be a cadmium-based quantum dot. Specifically, the quantum dot may include a non-cadmium-based quantum dot.
본 발명에 있어서, 상기 양자점이 비카드뮴계 양자점인 경우 환경 오염의 위험을 억제할 수 있고, 인체에 유해하지 않아 이를 다루는 작업자의 건강을 보호할 수 있는 이점이 있어 바람직하다.In the present invention, when the quantum dot is a non-cadmium-based quantum dot, it is possible to suppress the risk of environmental pollution, is not harmful to the human body is preferable because there is an advantage that can protect the health of the worker handling it.
상기 비카드뮴계 양자점은 입사된 청색광원을 이용하여, 녹색광 및 적색광으로의 광변환을 위해 발광 중심 파장이 서로 다른, 구체적으로 50nm 이상의 차이가 나는 2종 또는 그 이상의 양자점을 포함 한다. 바람직하게는 상기 비카드뮴계 양자점은 발광 중심 파장이 서로 70nm 이상 차이가 나는 2종 이상의 양자점을 포함할 수 있다.The non-cadmium-based quantum dots include two or more quantum dots having different emission center wavelengths, specifically, 50 nm or more, for light conversion to green light and red light by using an incident blue light source. Preferably, the non-cadmium-based quantum dots may include two or more kinds of quantum dots in which the emission center wavelengths differ from each other by 70 nm or more.
상기 2종 이상의 비카드뮴계 양자점의 발광 중심 파장의 차이가 상기 범위인 경우 넓은 색재현성으로 뛰어난 화질의 디스플레이를 제공할 수 있는 이점이 있다.When the difference between the emission center wavelengths of the two or more non-cadmium-based quantum dots is within the above range, there is an advantage of providing a display having excellent image quality with wide color reproducibility.
상기 비카드뮴계 양자점에 있어서, 상기 양자점은 발광중심파장 범위가 510nm 내지 540nm를 갖는 녹색 양자점 및 발광중심파장 범위가 610nm 내지 630nm인 적색 양자점을 사용하는 것이 뛰어난 색재현성 구현에 효과적이다. 바람직하게는, 상기 양자점은 발광중심파장 범위가 상기 녹색 양자점 및 상기 적색 양자점을 포함할 수 있으며, 이 경우 각각의 상기 발광파장을 만족하는 양자점을 적용함으로써, 청색광원의 청색투과광, 녹색 발광, 적색 발광에 의해 만들어지는 백색광원의 컬러필터의 사용이 가능하여, 넓은 색재현성 갖는 디스플레이 장치를 제공할 수 있는 이점이 있다.In the non-cadmium-based quantum dot, the quantum dot is effective to realize excellent color reproduction using a green quantum dot having a light emission center wavelength range of 510 nm to 540 nm and a red quantum dot having a light emission center wavelength range of 610 nm to 630 nm. Preferably, the quantum dots may include the green quantum dots and the red quantum dots in the emission center wavelength range, and in this case, by applying quantum dots satisfying each of the emission wavelengths, blue transmitted light of a blue light source, green light emission, red light The use of the color filter of the white light source produced by the light emission is possible, there is an advantage that can provide a display device having a wide color reproduction.
상기 폴리에틸렌 글리콜계 리간드는 화학적 결합으로 양자점의 표면에 배치된다.The polyethylene glycol-based ligand is disposed on the surface of the quantum dot by a chemical bond.
구체적으로, 본 발명에 따른 양자점은 표면에 배치되는 하기 화학식 1-A로 표시되는 화합물을 포함하는 폴리에틸렌 글리콜계 리간드를 포함한다. 구체적으로, 상기 폴리에틸렌 글리콜계 리간드는 화학적 결합으로 양자점의 표면에 배치된다.Specifically, the quantum dot according to the present invention includes a polyethylene glycol-based ligand comprising a compound represented by the following formula 1-A disposed on the surface. Specifically, the polyethylene glycol ligand is disposed on the surface of the quantum dots by chemical bonds.
[화학식 1-A][Formula 1-A]
(상기 화학식 1-A에서,(In Chemical Formula 1-A,
R'는 화학식 1-1로 표시되고,R 'is represented by the formula 1-1,
[화학식 1-1][Formula 1-1]
상기 화학식 1-1에서, In Chemical Formula 1-1,
R1은 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이고, R1 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
R2는 화학식 1-2으로 표시되며,R2 is represented by the formula 1-2,
[화학식 1-2][Formula 1-2]
상기 화학식 1-2에서,In Chemical Formula 1-2,
A는 산소원자 또는 황원자이고,A is an oxygen atom or a sulfur atom,
R3는 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이며, R3 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
B는 머캅토(), 카르복실산(), 디티오아세트산(), 인산() 또는 아민(-NH2)이고,B is mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ) Or amine (-NH 2 ),
R“는 수소원자, 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄 알킬기 또는 탄소수 3 내지 20의 분지쇄 알킬기이고, R “is hydrogen atom, mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a straight chain alkyl group having 1 to 20 carbon atoms or a branched chain alkyl group having 3 to 20 carbon atoms,
k는 1 내지 100의 정수이며,k is an integer from 1 to 100,
l은 0 내지 1의 정수이고,l is an integer from 0 to 1,
m은 0 내지 10의 정수이다).m is an integer from 0 to 10).
본 발명에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있으며, 예컨대 메틸, 에틸, n-프로필, 이소프로필, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, n-헵틸, 1-메틸헥실, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다. In the present invention, the alkyl group may be straight or branched chain, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1- Ethyl-butyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethyl Butyl, n-heptyl, 1-methylhexyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2-dimethylheptyl, 1-ethyl-propyl , 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like, but is not limited thereto.
본 발명에 있어서, 상기 알킬렌기는 2가인 것을 제외하고는 알킬기에 관한 설명을 적용할 수 있다.In the present invention, the description of the alkyl group can be applied except that the alkylene group is divalent.
본 발명에 있어서, 상기 *는 연결기를 의미한다.In the present invention, * means a linking group.
상기 화학식 1-A로 표시되는 화합물은 하기 화학식 1-3으로 표시될 수 있다.The compound represented by Chemical Formula 1-A may be represented by the following Chemical Formula 1-3.
[화학식 1-3][Formula 1-3]
(상기 화학식 1-3에서,(In Chemical Formula 1-3,
R"는 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄의 알킬기 또는 탄소수 3 내지 20의 분지쇄의 알킬기이고,R "stands for mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a linear alkyl group having 1 to 20 carbon atoms or a branched alkyl group having 3 to 20 carbon atoms,
o는 0 내지 5의 정수이며, o is an integer from 0 to 5,
p는 0 내지 1의 정수이고, p is an integer from 0 to 1,
q는 1 내지 50의 정수이다).q is an integer from 1 to 50).
올레산(oleic acid)이나 올레아민(oleic amine)과 같은 리간드를 포함하는 양자점의 경우 헥산(n-hexane)과 클로로포름 같은 고휘발 비극성 용제에는 분산이 잘되지만, 통상적으로 레지스트 제조 또는 디스플레이 소자 제작 시 사용되는 프로필렌 글리콜 메틸 에테르 아세테이트(PGMEA)와 같은 프로필렌 글리콜계 용제에는 분산성이 매우 취약한 문제가 있다. 그러나, 본 발명에 따른 양자점은 폴리에틸렌 글리콜계 리간드를 이용하기 때문에, PGMEA와 같은 용제에도 분산이 잘 되어 작업성이 용이해지고, 또한 작업자의 건강을 보다 더 보호할 수 있는 이점이 있으며, 상기 화학식 1-A로 표시되는 화합물로서 상기 화학식 1-3으로 표시되는 화합물을 이용하는 경우, 특히 전술한 이점이 극대화되어 바람직하다.Quantum dots containing ligands, such as oleic acid or oleic amine, are well dispersed in high-volatile nonpolar solvents such as hexane and n-hexane, but are typically used for resist manufacturing or display device fabrication. Propylene glycol-based solvents such as propylene glycol methyl ether acetate (PGMEA) are very poor in dispersibility. However, since the quantum dot according to the present invention uses a polyethylene glycol-based ligand, it is easy to disperse in a solvent such as PGMEA, thereby making it easy to work and further protecting the health of the worker. In the case of using the compound represented by Chemical Formula 1-3 as the compound represented by -A, the above-described advantages are particularly maximized.
상기 폴리에틸렌 글리콜계 리간드의 구체적인 예로서는, 2-(2-메톡시에톡시)아세트산(2-(2-Methoxyethoxy)acetic acid(WAKO사)), 2-[2-(2-메톡시에톡시)에톡시]아세트산(2-[2-(2-Methoxyethoxy)ethoxy]acetic acid(WAKO사)), 숙신산 모노-[2-(2-메톡시-에톡시)-에틸]에스테르(Succinic acid mono-[2-(2-methoxy-ethoxy)-ethyl] ester), 말론산 모노-[2-(2-메톡시-에톡시)-에틸]에스테르(Malonic acid mono-[2-(2-methoxy-ethoxy)-ethyl] ester), 펜탄디온산 모노-{2-[2-(2-에톡시-에톡시)-에톡시]-에틸}에스테르(Pentanedioic acid mono-{2-[2-(2-ethoxy-ethoxy)-ethoxy]-ethyl} ester), {2-[2-(2-에틸-헥실옥시)-에톡시]-에톡시}-아세트산({2-[2-(2-Ethyl-hexyloxy)-ethoxy]-ethoxy}-acetic acid), 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-에톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르(Succinic acid mono-[2-(2-{2-[2-(2-{2-[2-(2-ethoxy-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethyl] ester), 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르(Succinic acid mono-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-methoxy-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethyl] ester), 말론산 모노-[2-(2-{2-[2-(2-{2-[2-(2-이소부톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르(Malonic acid mono-[2-(2-{2-[2-(2-{2-[2-(2-isobutoxy-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethyl] ester), 헥산디온산 모노-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에틸] 에스테르(Hexanedioic acid mono-[2-(2-{2-[2-(2-methoxy-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethyl] ester), 2-옥소-헥산디온산 6-(2-{2-[2-(2-에톡시-에톡시)-에톡시]-에톡시}-에틸)에스테르(2-Oxo-hexanedioic acid 6-(2-{2-[2-(2-ethoxy-ethoxy)-ethoxy]-ethoxy}-ethyl) ester), 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르(Succinic acid mono-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-methoxy-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethoxy]-ethoxy}-ethoxy)-ethyl] ester), O-(숙시닐)-O′-메틸폴리에틸렌글리콜 2′000(O-(Succinyl)-O′-methylpolyethylene glycol 2′000, Aldrich사), (2-부톡시-에톡시)-아세트산((2-Butoxy-ethoxy)-acetic acid, WAKO사), {2-[2-(카복시메톡시)에톡시]에톡시}아세트산({2-[2-(carboxymethoxy)ethoxy]ethoxy}acetic acid, WAKO사), 2-[2-(벤질옥시)에톡시]아세트산(2-[2-(Benzyloxy)ethoxy]acetic acid), (2-카복시메톡시-에톡시)-아세트산((2-Carboxymethoxy-ethoxy)-acetic acid, WAKO사), (2-부톡시-에톡시)-아세트산((2-Butoxy-ethoxy)-acetic acid, WAKO사)등을 들 수 있으나, 이에 한정되지 않는다.Specific examples of the polyethylene glycol ligand include 2- (2-methoxyethoxy) acetic acid (2- (2-Methoxyethoxy) acetic acid (WAKO)) and 2- [2- (2-methoxyethoxy). Methoxy] acetic acid (2- [2- (2-Methoxyethoxy) ethoxy] acetic acid (WAKO), succinic acid mono- [2- (2-methoxy-ethoxy) -ethyl] ester (Succinic acid mono- [2] -(2-methoxy-ethoxy) -ethyl] ester, malonic acid mono- [2- (2-methoxy-ethoxy) -ethyl] ester (Malonic acid mono- [2- (2-methoxy-ethoxy)- ethyl] ester, pentanedioic acid mono- {2- [2- (2-ethoxy-ethoxy) -ethoxy] -ethyl} ester (Pentanedioic acid mono- {2- [2- (2-ethoxy-ethoxy) ) -ethoxy] -ethyl} ester), {2- [2- (2-ethyl-hexyloxy) -ethoxy] -ethoxy} -acetic acid ({2- [2- (2-Ethyl-hexyloxy)- ethoxy] -ethoxy} -acetic acid), succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2-ethoxy-ethoxy) -ethoxy] -ethoxy } -Ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester (Succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- ethoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy)- ethoxy] -ethoxy} -ethoxy) -ethyl] ester), succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2- Methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester (Succinic acid mono -[2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester), malonic acid mono- [2- (2- {2- [2- (2- {2- [2- (2-isobutyrate) Methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester (Malonic acid mono- [2- (2- {2- [2- (2- {2- [2- (2-isobutoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester), Hexionate mono- [2- (2 -{2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester (Hexanedioic acid mono- [2- (2- {2- [2- ( 2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester), 2-oxo-hexanedioic acid 6- (2- {2- [2- (2-ethoxy-ethoxy)- Oxy] -ethoxy} -ethyl) ester (2-Oxo-hexanedioic acid 6- (2- {2- [ 2- (2-ethoxy-ethoxy) -ethoxy] -ethoxy} -ethyl) ester), succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- {2 -[2- (2- {2- [2- (2- {2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy } -Ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester (Succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2 -methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester), O- (succinyl) -O'-methylpolyethylene glycol 2'000 (O- (Succinyl) -O'-methylpolyethylene glycol 2'000, Aldrich), (2-butoxy-ethoxy ) -Acetic acid ((2-Butoxy-ethoxy) -acetic acid (WAKO), {2- [2- (carboxymethoxy) ethoxy] ethoxy} acetic acid ({2- [2- (carboxymethoxy) ethoxy] ethoxy } acetic acid, manufactured by WAKO), 2- [2- (benzyloxy) ethoxy] acetic acid (2- [2- (Benzyloxy) ethoxy] acetic acid), (2-carboxymethoxy-ethoxy) -acetic acid (( 2-carbox ymethoxy-ethoxy) -acetic acid, manufactured by WAKO), (2-butoxy-ethoxy) -acetic acid ((2-Butoxy-ethoxy) -acetic acid, manufactured by WAKO), and the like, but are not limited thereto.
상기 비카드뮴계 양자점은 폴리에틸렌 글리콜계 리간드를 사용함으로써, 톨루엔, 헥산, 클로로포름과 같은 휘발성이 큰 용제가 아닌, 컬러필터 양산 라인에서 사용하고 있는 프로필렌글리콜모노메틸에테르 아세테이트와 같은 용제를 사용해도 양호한 양자점의 분산 특성을 부여할 수 있다. The non-cadmium-based quantum dot is a polyethylene glycol ligand, the quantum dot is good to use a solvent such as propylene glycol monomethyl ether acetate used in the color filter production line, not a highly volatile solvent such as toluene, hexane, chloroform Dispersion characteristics can be imparted.
상기 폴리에틸렌 글리콜계 리간드를 포함하는 비카드뮴계 양자점은 양자점 전체 대비 5% 내지 150%로 포함될 수 있으며, 보다 바람직하게는 10% 내지 100%로 포함돌 수 있다. 상기 폴리에틸렌 글리콜계 리간드를 포함하는 비카드뮴계 양자점의 함량이 상기 범위 미만일 경우에는 양자점 분산특성의 다소 불량할 수 있고, 상기 범위를 초과하는 경우에는 양자점 분산 특성은 우수하나 도막의 경화 특성이 다소 저하될 수 있으므로, 상기 범위를 만족하도록 포함되는 것이 바람직하다.The non-cadmium-based quantum dot including the polyethylene glycol-based ligand may be included in 5% to 150% of the quantum dot, more preferably 10% to 100%. If the content of the non-cadmium-based quantum dot containing the polyethylene glycol-based ligand is less than the above range may be somewhat poor quantum dot dispersion characteristics, if it exceeds the above range, the quantum dot dispersion characteristics are excellent but the curing properties of the coating film is slightly reduced Since it may be, it is preferably included to satisfy the above range.
상기 양자점은 광변환 수지 조성물의 고형분 100중량부에 대하여 1 내지 40 중량부, 바람직하게는 2 내지 20 중량부로 포함될 수 있다. 상기 양자점이 상기 범위 내로 포함될 경우 발광 효율이 우수하고, 코팅층의 신뢰성이 우수한 이점이 있다. 상기 양자점이 상기 범위 미만으로 포함되는 경우 녹색광 및 적색광의 광변환 효율이 미비할 수 있고, 상기 범위를 초과하는 경우 상대적으로 청색광의 방출이 저하되어 색재현성이 떨어지는 문제가 발생될 수 있다.The quantum dot may be included in 1 to 40 parts by weight, preferably 2 to 20 parts by weight based on 100 parts by weight of the solid content of the light conversion resin composition. When the quantum dots are included in the above range, there is an advantage in that the luminous efficiency is excellent and the reliability of the coating layer is excellent. When the quantum dots are included in the range below the light conversion efficiency of the green light and red light may be insufficient, and when the quantum dot exceeds the above range, the emission of blue light may be relatively lowered, thereby causing a problem of poor color reproducibility.
바인더 수지Binder resin
본 발명에 따른 광변환 수지 조성물은 바인더 수지를 포함하며, 상기 바인더 수지는 열경화성 수지 또는 알칼리 가용성 수지를 포함할 수 있다. 구체적으로, 상기 바인더 수지는 열경화성 수지 또는 알칼리 가용성 수지로서 에폭시 함유 아크릴계 바인더 수지 및 카도계 바인더 수지를 포함할 수 있다.The photoconversion resin composition according to the present invention includes a binder resin, and the binder resin may include a thermosetting resin or an alkali-soluble resin. Specifically, the binder resin may include an epoxy-containing acrylic binder resin and a cardo-based binder resin as a thermosetting resin or an alkali-soluble resin.
상기 에폭시 함유 아크릴계 바인더 수지는 하기 화학식 2 내지 화학식 4 중 적어도 하나의 반복단위를 포함할 수 있다.The epoxy-containing acrylic binder resin may include at least one repeating unit of the following Chemical Formulas 2 to 4.
[화학식 2][Formula 2]
[화학식 3][Formula 3]
[화학식 4][Formula 4]
(상기 화학식 2 내지 4에서,(In Chemical Formulas 2 to 4,
R4, R5 및 R6는 각각 독립적으로 수소 또는 메틸기이다).R 4, R 5 and R 6 are each independently hydrogen or a methyl group).
상기 화학식 2 내지 화학식 4 중 적어도 하나의 반복단위를 포함하는 에폭시 함유 아크릴계 바인더 수지를 포함하는 경우 뛰어난 기계적 특성과 함께 광변환 수지 조성물의 우수한 광변환율 및 뛰어난 광유지율로 인해 색재현성과 신뢰성이 우수해 질 수 있다. When the epoxy-containing acrylic binder resin including at least one repeating unit of Formulas 2 to 4 is included, the color reproducibility and reliability are excellent due to the excellent light conversion rate and excellent light retention rate of the light conversion resin composition together with excellent mechanical properties. Can lose.
상기 카도계 바인더 수지는 광이나 열의 작용에 의한 반응성을 갖고, 양자점의 분산매로서 작용한다. 본 발명의 광변환 수지 조성물에 함유되는 카도계 바인더 수지는 양자점에 대한 결합제 수지로서 작용하고, 광변환 코팅층의 지지체로 사용이 가능한 수지라면 제한되지 않는다. The cardo-based binder resin has reactivity by the action of light or heat and acts as a dispersion medium of quantum dots. The cardo-based binder resin contained in the photoconversion resin composition of the present invention is not limited as long as it acts as a binder resin for quantum dots and can be used as a support for the photoconversion coating layer.
상기 카도계 바인더 수지는 하기 화학식 5 내지 화학식 10 중 적어도 하나의 반복 단위를 포함할 수 있다.The cardo-based binder resin may include at least one repeating unit of Formula 5 to Formula 10.
[화학식 5][Formula 5]
[화학식 6][Formula 6]
[화학식 7][Formula 7]
[화학식 8][Formula 8]
상기 화학식 5 내지 8에서,In Chemical Formulas 5 to 8,
X 및 X'은 각각 독립적으로 단일 결합, -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-,,,,,,,,,,,, 또는 이고,X and X 'are each independently a single bond, -CO-, -SO 2- , -C (CF 3 ) 2- , -Si (CH 3 ) 2- , -CH 2- , -C (CH 3 ) 2 -, -O-, , , , , , , , , , , , or ego,
Y는 산무수물 잔기이며,Y is an acid anhydride residue,
Z는 산2무수물 잔기이고,Z is an acid 2 anhydride residue,
R'''는 수소 원자, 에틸기, 페닐기, -C2H4Cl, -C2H4OH 또는 -CH2CH=CH2이며,R '''is a hydrogen atom, an ethyl group, a phenyl group, -C 2 H 4 Cl, -C 2 H 4 OH or -CH 2 CH = CH 2 ,
R7, R7', R8, R8', R9, R9', R10, R10', R11, R11', R12 및 R12' 은 각각 독립적으로 수소 원자 또는 메틸기이고,R7, R7 ', R8, R8', R9, R9 ', R10, R10', R11, R11 ', R12 and R12' are each independently a hydrogen atom or a methyl group,
R13, R13', R14 및 R14'는 각각 독립적으로 탄소수 1 내지 6의 직쇄의 알킬렌기 또는 탄소수 3 내지 6의 분지쇄의 알킬렌기이고, 상기 알킬렌기는 에스테르 결합, 탄소수 6 내지 14의 싸이클로알킬렌기 및 탄소수 6 내지 14의 아릴렌기 중 적어도 하나로 중단될 수 있으며,R13, R13 ', R14 and R14' are each independently a linear alkylene group having 1 to 6 carbon atoms or a branched alkylene group having 3 to 6 carbon atoms, and the alkylene group is an ester bond and a cycloalkylene group having 6 to 14 carbon atoms. And it may be stopped by at least one of arylene groups having 6 to 14 carbon atoms,
R15, R15', R16, R16', R17, R17', R18 및 R18'는 각각 독립적으로 수소 원자, 할로겐 원자 또는 탄소수 1 내지 6의 직쇄의 알킬기 또는 탄소수 3 내지 6의 분지쇄의 알킬기이고,R15, R15 ', R16, R16', R17, R17 ', R18 and R18' are each independently a hydrogen atom, a halogen atom or a linear alkyl group having 1 to 6 carbon atoms or a branched alkyl group having 3 to 6 carbon atoms,
r 및 s는 각각 0 ≤ m ≤ 30, 0 ≤ n ≤ 30을 만족하는 정수이며, r and s are integers satisfying 0 ≦ m ≦ 30 and 0 ≦ n ≦ 30, respectively.
단 r 및 s는 동시에 0은 아니다.Provided that r and s are not zero at the same time.
[화학식 9][Formula 9]
[화학식 10][Formula 10]
상기 화학식 9 및 10에서,In Chemical Formulas 9 and 10,
P는 각각 독립적으로 , , , 또는 이고,P is each independently , , , or ego,
R19 및 R20는 각각 독립적으로 수소, 히드록시기, 티올기, 아미노기, 니트로기 또는 할로겐 원자이며,R19 and R20 are each independently hydrogen, hydroxy group, thiol group, amino group, nitro group or halogen atom,
Ar1은 각각 독립적으로 C6 내지 C15 아릴기이고,Ar1 is each independently a C6 to C15 aryl group,
Y'는 산무수물 잔기이며,Y 'is an acid anhydride residue,
Z'는 산2무수물 잔기이고,Z 'is an acid 2 anhydride residue,
A'는 O, S, N, Si 또는 Se이며,A 'is O, S, N, Si or Se,
a 및 b는 각각 독립적으로 1 내지 6의 정수이고,a and b are each independently an integer of 1 to 6,
c 및 d은 각각 독립적으로 0 내지 30의 정수이며,c and d are each independently an integer of 0 to 30,
단, c 및 d는 동시에 0이 아니다.Provided that c and d are not zero at the same time.
본 발명에 따른 광변환 수지 조성물이 상기 화학식 5 내지 화학식 10의 반복단위 중 적어도 하나의 반복단위를 포함하는 카도계 바인더 수지를 포함하는 경우 공정간 신뢰성이 우수해지며, 아웃가스 발생을 최소화하여 패널 작동 시 잔상이 발생하지 않고 뛰어난 반사방지 효과로 고품질의 화질, 우수한 내열성, 내화학성, 내구성 및 신뢰성의 부여가 가능한 이점이 있다.When the photoconversion resin composition according to the present invention comprises a cardo-based binder resin including at least one repeating unit of the repeating units of the formulas (5) to (10), the inter-process reliability is excellent, and the outgas generation is minimized. There is an advantage that can provide high quality image quality, excellent heat resistance, chemical resistance, durability and reliability with no anti-image after operation and excellent anti-reflection effect.
상기 화학식 5 및 7의 Y는 산무수물의 잔기로서, 본 발명의 카도계 바인더 수지의 합성 중간체인 비스페놀 에폭시아크릴레이트 화합물을 산무수물 화합물과 반응시켜 얻어질 수 있다. 잔기 Y를 도입할 수 있는 산무수물 화합물은 특별히 한정되지 않으며, 예를 들면, 무수말레인산, 무수숙신산, 무수이타콘산, 무수프탈산, 무수테트라히드로프탈산, 무수헥사히드로프탈산, 무수메틸렌도 메틸렌테트라히드로프탈산, 무수클로로렌드산, 무수메틸테트라히드로프탈산 등을 들 수 있다.Y in Chemical Formulas 5 and 7 is a residue of an acid anhydride, and may be obtained by reacting a bisphenol epoxy acrylate compound which is a synthetic intermediate of the cardo-based binder resin of the present invention with an acid anhydride compound. The acid anhydride compound into which the residue Y can be introduced is not particularly limited, and for example, maleic anhydride, succinic anhydride, itaconic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methylenetetrahydrophthalic anhydride. , Chlororenic acid anhydride, methyltetrahydrophthalic anhydride, and the like.
상기 화학식 6 및 8의 Z는 산2무수물의 잔기로서, 본 발명의 카도계 바인더 수지의 합성 중간체인 비스페놀 에폭시아크릴레이트 화합물을 산2무수물 화합물과 반응시켜 얻어질 수 있다. 잔기 Z를 도입할 수 있는 산2무수물 화합물은 특별히 한정되지 않으며, 예를 들면, 무수피로멜리트산, 벤조페논테트라카르복시산2무수물, 바이페닐테트라카르복시산2무수물, 바이테닐에테르테트라카르복시산2무수물 등의 방향족다가카르복시시산무수물을 들 수 있다.Z in Chemical Formulas 6 and 8 may be obtained by reacting a bisphenol epoxy acrylate compound which is a synthetic intermediate of the cardo-based binder resin of the present invention with a residue of an acid 2 anhydride. The acid dianhydride compound into which the residue Z can be introduced is not particularly limited, and examples thereof include aromatics such as pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, and bitenyl ether tetracarboxylic dianhydride. And polyhydric carboxylic acid anhydrides.
상기 '산2무수물'은 분자 내에 산무수물기를 2개 포함하는 화합물을 의미한다.The 'acid dianhydride' refers to a compound including two acid anhydride groups in a molecule.
본 발명에서는 상기 카도계 바인더 수지의 제조방법을 특별히 한정하지는 않는다. 예컨대, 비스페놀 화합물과 에폭시 화합물을 반응시켜 비스페놀 에폭시 화합물을 합성한 후, 합성된 비스페놀 에폭시 화합물을 아크릴레이트 화합물과 반응시켜 비스페놀 에폭시아크릴레이트 화합물을 합성한 뒤, 비스페놀 에폭시아크릴레이트 화합물을 산무수물, 산2무수물 또는 이들의 혼합물과 반응시켜 제조할수 있으나 이에 한정되지 않는다.In the present invention, the manufacturing method of the cardo-based binder resin is not particularly limited. For example, a bisphenol compound is reacted with an epoxy compound to synthesize a bisphenol epoxy compound, and then a synthesized bisphenol epoxy compound is reacted with an acrylate compound to synthesize a bisphenol epoxy acrylate compound, and then the bisphenol epoxy acrylate compound is an acid anhydride, an acid. It can be prepared by reacting with anhydride or mixtures thereof, but is not limited thereto.
상기 카도계 바인더 수지 대 에폭시 함유 아크릴계 바인더 수지의 중량비는 10:90 내지 90:10일 수 있다. 상기 카도계 바인더 수지와 에폭시 함유 아크릴계 바인더 수지의 비율이 상기 범위일 경우에는 코팅 후 포스트베이크 열처리 공정 중 도막의 열경화 특성이 뛰어나 도막의 물리적 특성이 뛰어난 이점이 있으며, 상기 범위를 벗어날 경우에는 도막의 경화도가 부족하여 신뢰성이 저하될 수 있다. The weight ratio of the cardo-based binder resin to the epoxy-containing acrylic binder resin may be 10:90 to 90:10. When the ratio of the cardo-based binder resin and the epoxy-containing acrylic binder resin is in the above range, the thermal curing property of the coating film is excellent during the post-baking heat treatment process after coating, and the physical properties of the coating film are excellent. The degree of curing may be insufficient and the reliability may be lowered.
상기 바인더 수지는 상기 광변환 수지 조성물 전체 100중량부에 대하여, 1 내지 40 중량부, 바람직하게는 1 내지 30 중량부, 더욱 바람직하게는 2 내지 10 중량부로 포함될 수 있다. 상기 바인더 수지가 상기 범위 내로 포함될 경우에는 열경화가 용이하며, 열경화 시에 막 감소가 방지되어 도막특성이 양호해지므로 바람직하다. 상기 바인더 수지가 상기 범위 미만으로 포함될 경우에는 경화도 부족으로 막강도가 저하될 수 있으며, 상기 바인더 수지가 상기 범위를 초과하여 포함될 경우 코팅성이 다소 저하되어 균일한 도막형성이 다소 어려울 수 있다.The binder resin may be included in an amount of 1 to 40 parts by weight, preferably 1 to 30 parts by weight, and more preferably 2 to 10 parts by weight, based on 100 parts by weight of the total photoconversion resin composition. When the binder resin is included in the above range, it is preferable because the heat curing is easy, and the film reduction during heat curing is prevented, so that the coating film properties are good. When the binder resin is included in less than the above range, the film strength may be lowered due to lack of curing degree, and when the binder resin is included in the above range, the coating property may be slightly lowered, thereby making it difficult to form a uniform coating film.
산란입자Scattering particles
본 발명에 따른 광변환 수지 조성물은 산란입자를 포함할 수 있다.The light conversion resin composition according to the present invention may include scattering particles.
상기 산란입자는 통상의 무기 재료를 사용할 수 있으며, 바람직하게는 평균입경이 50 내지 1000nm인 금속산화물을 포함할 수 있다.The scattering particles may use a conventional inorganic material, and preferably include a metal oxide having an average particle diameter of 50 to 1000nm.
구체적으로 상기 금속 산화물은 Al2O3, SiO2, ZnO, ZrO2, BaTiO3, TiO2, Ta2O5, Ti3O5, ITO, IZO, ATO, ZnO-Al, Nb2O3, SnO, MgO 및 이들의 조합으로 이루어진 군에서 선택된 1종이 가능하다. 필요한 경우 아크릴레이트 등의 불포화 결합을 갖는 화합물로 표면 처리된 재질도 사용 가능하다.Specifically, the metal oxide is Al 2 O 3 , SiO 2 , ZnO, ZrO 2 , BaTiO 3 , TiO 2 , Ta 2 O 5 , Ti 3 O 5 , ITO, IZO, ATO, ZnO-Al, Nb 2 O 3 , One kind selected from the group consisting of SnO, MgO, and combinations thereof is possible. If necessary, a material surface-treated with a compound having an unsaturated bond such as acrylate may be used.
다만, 본 발명에 따른 광변환 수지 조성물이 산란입자를 포함할 경우 상기 산란입자를 통해 양자점에서 방출된 광의 경로를 증가시켜 광변환 코팅층에서의 전체적인 광효율을 높일 수 있어 바람직하다.However, when the light conversion resin composition according to the present invention includes scattering particles, it is preferable to increase the overall light efficiency in the light conversion coating layer by increasing the path of light emitted from the quantum dots through the scattering particles.
상기 산란입자는 50 내지 1000nm의 평균입경을 가질 수 있으며, 바람직하기로 100 내지 500nm 범위인 것을 사용한다. 이때 입자 크기가 너무 작으면 양자점으로부터 방출된 빛의 충분한 산란 효과를 기대할 수 없고, 이와 반대로 너무 큰 경우에는 조성물 내에 가라 앉거나 균일한 품질의 자발광층 표면을 얻을 수 없으므로, 상기 범위 내에서 적절히 조절하여 사용한다.The scattering particles may have an average particle diameter of 50 to 1000nm, preferably use a 100 to 500nm range. In this case, if the particle size is too small, sufficient scattering effect of the light emitted from the quantum dot cannot be expected. On the contrary, if the particle size is too large, the surface of the composition cannot be settled in the composition or the surface of the self-emitting layer of uniform quality can be obtained. Use it.
상기 산란입자는 상기 광변환 수지 조성물의 전체 고형분 100중량부에 대하여 0.5 내지 20중량부, 바람직하게는 1 내지 15중량부로 포함할 수 있다. 상기 산란입자가 상기 범위 내로 포함될 경우 발광 세기 증가 효과가 극대화될 수 있어 바람직하다. 상기 산란입자가 상기 범위 미만으로 포함될 경우에는 얻고자 하는 발광 세기의 확보가 다소 어려울 수 있고, 상기 범위를 초과할 경우에는 청색 조사광의 투과도가 저하되어 발광효율에 문제가 발생할 수 있으므로, 상기 범위 내에서 적절하게 사용하는 것이 바람직하다.The scattering particles may include 0.5 to 20 parts by weight, preferably 1 to 15 parts by weight, based on 100 parts by weight of the total solids of the light conversion resin composition. When the scattering particles are included in the above range, the effect of increasing the light emission intensity is preferable. When the scattering particles are included in the below range, it may be difficult to secure the emission intensity to be obtained, and when the scattering particles are included in the above range, the transmittance of blue irradiated light may be lowered, which may cause a problem in luminous efficiency. It is preferable to use appropriately.
열경화성 화합물 Thermosetting compounds
본 발명에 따른 광변환 수지 조성물은 열경화성 화합물을 포함할 수 있다.The light conversion resin composition according to the present invention may include a thermosetting compound.
상기 열경화성 화합물의 평균 분자량은 20,000 이하인 것이 바람직하고 특히 1,000 내지 20,000인 것이 보다 바람직하다. 상기 열경화성 화합물의 평균분자량이 상기한 조건을 만족하는 경우에는 잔막율 및 내열성이 우수해질 수 있다.It is preferable that it is 20,000 or less, and, as for the average molecular weight of the said thermosetting compound, it is more preferable that it is especially 1,000-20,000. When the average molecular weight of the thermosetting compound satisfies the above conditions, the residual film ratio and heat resistance may be excellent.
상기 열경화성 화합물은 광변환 수지 조성물 전체 100중량부에 대하여 10 내지 80중량부의 에폭시 화합물로 구성되는 것이 바람직하다. 상기 열경화성 화합물의 함량이 상기 범위 미만일 경우에는 도막강도 부족에 따른 신뢰성이 저하될 수 있다.The thermosetting compound is based on 100 parts by weight of the total light conversion resin composition It is preferable that it consists of 10-80 weight part of epoxy compounds. When the content of the thermosetting compound is less than the above range, the reliability due to the lack of coating film strength may be lowered.
상기한 조건을 만족하는 열경화성 화합물의 구체적인 예로는, 2-[4-(2,3-에폭시프로폭시)페닐]-2-[4-[1,1-비스[4-([2,3-에폭시프로폭시]페닐)]에틸]페닐]프로판과 1,3-비스[4-[1-[4-(2,3-에폭시프로폭시)페닐]-1-[4-[1-[4-(2,3-에폭시프로폭시페닐)-1-메틸에틸]페닐]에틸]페녹시]-2-프로판올과의 혼합물, 2-[4-(2,3-에폭시프로폭시)페닐]-2-[4-[1,1-비스[4-([2,3-에폭시프로폭시]페닐)]에틸]페닐]프로판 등을 들 수 있다. 시판되는 상품으로서는 JER 157S65, 157S70(상품명; JER(주) 제품) 등을 들 수 있다. 이들은 각각 단독으로 또는 2종 이상을 조합하여 사용할 수 있다. Specific examples of the thermosetting compound that satisfies the above conditions include 2- [4- (2,3-epoxypropoxy) phenyl] -2- [4- [1,1-bis [4-([2,3- Epoxypropoxy] phenyl)] ethyl] phenyl] propane and 1,3-bis [4- [1- [4- (2,3-epoxypropoxy) phenyl] -1- [4- [1- [4- Mixture with (2,3-epoxypropoxyphenyl) -1-methylethyl] phenyl] ethyl] phenoxy] -2-propanol, 2- [4- (2,3-epoxypropoxy) phenyl] -2- [4- [1,1-bis [4-([2,3-epoxypropoxy] phenyl)] ethyl] phenyl] propane and the like. Examples of commercially available products include JER 157S65, 157S70 (trade name; JER Corporation). These can be used individually or in combination of 2 types or more, respectively.
본 발명에 따른 열경화성 화합물은 상기 비스페놀A 노볼락형 에폭시 화합물 이외의 에폭시 수지를 추가로 포함할 수 있다. 상기 비스페놀A 노볼락형 에폭시 수지와 추가로 포함하여 함께 사용될 수 있는 에폭시 수지의 바람직한 예로서는, 비스페놀A형 에폭시 수지, 비스페놀F형 에폭시 수지, 비스페놀S형 에폭시 수지, 디페닐에테르형 에폭시 수지, 하이드로키논형 에폭시 수지, 나프탈렌형 에폭시 수지, 비페닐형 에폭시 수지, 플루오렌 에폭시 수지, 페놀노블락형 에폭시 수지, 올소크레졸 노블락형 에폭시 수지, 트리스히드록시페닐메탄형 에폭시 수지, 3관능형 에폭시 수지, 테트라페놀 에탄형 에폭시 수지, 디시클로메탄디엔페놀형 에폭시 수지, 수첨비스페놀A형 에폭시 수지, 비스페놀A함핵 폴리올형 에폭시 수지, 폴리프로필렌글리콜형 에폭시 수지, 글리시딜에스테르형 에폭시 수지, 글리시딜아민형 에폭시 수지, 글리옥살형 에폭시 수지, 지환식 다관능 에폭시 수지, 복소환형 에폭시 수지등을 사용할 수 있다. 이들 에폭시 수지는 각각 단독으로 또는 2종 이상을 조합하여 상기 비스페놀 A 노볼락형 에폭시 수지에 추가로 포함되어 사용할 수 있다.The thermosetting compound according to the present invention may further include an epoxy resin other than the bisphenol A novolac epoxy compound. Preferred examples of the epoxy resin which can be used together with the bisphenol A novolak-type epoxy resin further include, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, diphenyl ether type epoxy resin, hydrokinone Type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, fluorene epoxy resin, phenol noblock type epoxy resin, allocresol noblock type epoxy resin, trishydroxyphenylmethane type epoxy resin, trifunctional epoxy resin, tetraphenol Ethane type epoxy resin, dicyclomethane dienephenol type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol A nucleus polyol type epoxy resin, polypropylene glycol type epoxy resin, glycidyl ester type epoxy resin, glycidylamine type epoxy Resin, glyoxal epoxy resin, alicyclic polyfunctional epoxy resin, suit It may be an annular epoxy resin. Each of these epoxy resins may be used alone or in combination with the bisphenol A novolac epoxy resin alone or in combination of two or more thereof.
상기한 에폭시 수지로서는 하기와 같은 시판품을 이용할 수 있다. 보다 구체적으로는 비스페놀F형 에폭시 수지로서 YDF-175S(東都化成㈜제품) 등, 비스페놀A형 에폭시 수지로서 YDB-715(東都化成㈜ 제품) 등, 비스페놀S형 에폭시 수지로서 EPICLON EXA1514(다이니뽄 잉키카가큐코우교우㈜제품) 등, 하이드로 키논형 에폭시 수지로서 YDC-1312(東都化成㈜ 제품) 등, 나프탈렌형 에폭시 수지로서 EPICLON EXA4032(다이니뽄 잉키카가큐코우교우㈜제품) 등, 비페닐형 에폭시 수지로서 에피코트 YX4000H(JER(주) 제품) 등, 비스페놀A노볼락형 에폭시 수지로서 JER 157S65 또는 157S70(JER(주) 제품) 등, 페놀노볼락형 에폭시 수지로서 EPPN-201(니뽄카야쿠(주) 제품), JER152 154(JER(주) 제품) 등, 크레졸노볼락형 에폭시 수지로서 EOCN-102S, 103S, 104S 또는 1020(니뽄카야쿠(주) 제품), 트리스히드록시페닐메탄형에폭시수지로서 에피코트 1032H60(JER (주) 제품) 등, 3관능형 에폭시 수지로서 VG3101M80(미쯔이카가쿠㈜제품) 등, 테트라페놀에탄형 에폭시 수지로서 에피코트10315(JER (주) 제품) 등, 수첨비스페놀A형 에폭시 수지로서 ST-3000(東都化成㈜제품) 등, 글리시딜에스테르형 에폭시 수지로서 에피코트 190P(JER (주) 제품)등, 글리시딜아민형 에폭시 수지로서 YH-434(東都化成㈜제품) 등, 글리옥살형 에폭시 수지로서 YDG-414(東都化成㈜제품)등, 지환식 다관능 에폭시 수지로서 에포리드 GT-401(다이셀카가쿠㈜제품) 등을 들 수 있다. 상기 에폭시 수지는 각각 단독으로 또는 2종 이상을 조합하여 사용할 수 있다. As said epoxy resin, the following commercial items can be used. More specifically, bisphenol F-type epoxy resins such as YDF-175S (manufactured by Toyo Chemical Co., Ltd.), bisphenol A-type epoxy resins such as YDB-715 (manufactured by Toyo Chemical Co., Ltd.), etc. Biphenyl type epoxy resin such as EPICLON EXA4032 (manufactured by Dainippon Inkyaka Chemical Co., Ltd.) as a naphthalene type epoxy resin, such as YDC-1312 (manufactured by Tosho Chemical Co., Ltd.) as a hydrokinone type epoxy resin, and the like. As a bisphenol A novolak type epoxy resin, such as epicoat YX4000H (made by JER Corporation) as resin, EPPN-201 (Nippon Kayaku (Nippon Kayaku) as a phenol novolak-type epoxy resin, such as JER 157S65 or 157S70 (made by JER Corporation), etc. Product), JER152 154 (JER Co., Ltd.) such as cresol novolac type epoxy resin, EOCN-102S, 103S, 104S or 1020 (manufactured by Nippon Kayaku Co., Ltd.), trishydroxyphenylmethane epoxy resin As epicoat 1032H60 (product of JER Co., Ltd.), trifunctional type As a epoxy resin, VG3101M80 (manufactured by Mitsui Chemical Co., Ltd.), Epicoat 10315 (manufactured by JER Co., Ltd.) as a tetraphenolethane type epoxy resin, ST-3000 (manufactured by Tokyo Chemical Co., Ltd.) as a hydrogenated bisphenol A type epoxy resin, As a glycidyl ester type epoxy resin, Epicoat 190P (manufactured by JER Co., Ltd.), and a glycidylamine type epoxy resin, such as YH-434 (manufactured by Toyo Chemical Co., Ltd.), are used as glyoxal type epoxy resins. As an alicyclic polyfunctional epoxy resin, such as the Chemicals Co., Ltd., Eporide GT-401 (made by Daicel Kagaku Co., Ltd.) etc. is mentioned, The said epoxy resin can be used individually or in combination of 2 or more types, respectively.
상기 열경화성 화합물은 광변환 수지 조성물 고형분 100중량%에 대하여 10 내지 80중량%인 것이 바람직하며, 보다 바람직하게는 15 내지 70중량%로 포함될 수 있다. 상기 열경화성 화합물이 상기 범위 이내로 포함될 경우에는 잔막율 및 평탄성이 양호할 수 있다.The thermosetting compound is preferably 10 to 80% by weight, more preferably 15 to 70% by weight based on 100% by weight of the solid content of the light conversion resin composition. When the thermosetting compound is included within the above range, the residual film ratio and flatness may be good.
경화 촉진제Curing accelerator
본 발명에 따른 광변환 수지 조성물은 경화 촉진제를 포함할 수 있다.The light conversion resin composition according to the present invention may include a curing accelerator.
상기 경화 촉진제는 예를 들어 카르복실산 화합물, 티올기를 가지는 유기 황화합물, 산발생제로 이루어진 군으로부터 선택되는 1종 이상의 화합물이 바람직하게 사용될 수 있으나, 이에 한정되는 것은 아니다.The curing accelerator may be preferably used, for example, at least one compound selected from the group consisting of a carboxylic acid compound, an organic sulfur compound having a thiol group, and an acid generator, but is not limited thereto.
상기 카르복실산 화합물은 방향족 헤테로아세트산류인 것이 바람직하며, 구체적으로 페닐티오아세트산, 메틸페닐티오아세트산, 에틸페닐티오아세트산, 메틸에틸페닐티오아세트산, 디메틸페닐티오아세트산, 메톡시페닐티오아세트산, 디메톡시페닐티오아세트산, 클로로페닐티오아세트산, 디클로로페닐티오아세트산, N-페닐글리신, 페녹시아세트산, 나프틸티오아세트산, N-나프틸글리신, 나프톡시아세트산, 1,2,4-벤젠트리카르복실산 무수물 등을 들 수 있으나, 이에 한정되는 것은 아니다.The carboxylic acid compound is preferably an aromatic heteroacetic acid, specifically, phenylthioacetic acid, methylphenylthioacetic acid, ethylphenylthioacetic acid, methylethylphenylthioacetic acid, dimethylphenylthioacetic acid, methoxyphenylthioacetic acid, dimethoxyphenylthio Acetic acid, chlorophenylthioacetic acid, dichlorophenylthioacetic acid, N-phenylglycine, phenoxyacetic acid, naphthylthioacetic acid, N-naphthylglycine, naphthoxyacetic acid, 1,2,4-benzenetricarboxylic acid anhydride, etc. It may be, but is not limited to such.
상기 티올기를 가지는 유기 황화합물의 구체적인 예로서는 2-머캅토벤조티아졸, 1,4-비스(3-머캅토부티릴옥시)부탄, 1,3,5-트리스(3-머캅토부틸옥시에틸)-1,3,5-트리아진-2,4,6(1H,3H,5H)-트리온, 트리메틸올프로판트리스(3-머갑토프로피오네이트), 펜타에리트리톨테트라키스(3-머캅토부틸레이트), 펜타에리트리톨테 트라키스(3-머캅토프로피오네이트), 디펜타에리트리톨헥사키스(3-머캅토프로피오네이트), 테트라에틸렌글리콜비스(3-머캅토프로피오네이트) 등을 들 수 있으나, 이에 한정되는 것은 아니다.Specific examples of the organic sulfur compound having the thiol group include 2-mercaptobenzothiazole, 1,4-bis (3-mercaptobutyryloxy) butane, 1,3,5-tris (3-mercaptobutyloxyethyl)- 1,3,5-triazine-2,4,6 (1H, 3H, 5H) -trione, trimethylolpropanetris (3-mergaptopropionate), pentaerythritol tetrakis (3-mercaptobutyl Rate), pentaerythritol tetrakis (3-mercaptopropionate), dipentaerythritol hexakis (3-mercaptopropionate), tetraethylene glycol bis (3-mercaptopropionate) and the like It may be, but is not limited to such.
상기 산발생제의 구체적인 예로서는 4-히드록시페닐디메틸설포늄 p-톨루엔설포네이트, 4-히드록시페닐디메틸설포늄헥사플루오로안티모네이트, 4-아세톡시페닐디메틸설포늄 p-톨루엔설포네이트, 4-아세톡시페닐메틸벤질설포늄헥사 플루오로안티모네이트, 트리페닐설포늄 p-톨루엔설포네이트, 트리페닐설포늄헥사플루오로안티모네이트, 디페닐요오도늄 p-톨루엔설포네이트, 디페닐요오도늄헥사플루오로안티모네이트 등의 오늄염류나 니트로벤질토실레이트류, 벤조인토실레이트류 등을 들 수 있다. Specific examples of the acid generator include 4-hydroxyphenyldimethylsulfonium p-toluenesulfonate, 4-hydroxyphenyldimethylsulfonium hexafluoroantimonate, 4-acetoxyphenyldimethylsulfonium p-toluenesulfonate, 4-acetoxyphenylmethylbenzylsulfonium hexafluoroantimonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium hexafluoroantimonate, diphenyliodonium p-toluenesulfonate, diphenyl Onium salts such as iodonium hexafluoroantimonate, nitrobenzyltosylates, benzointosylates and the like.
상기 경화 촉진제는 상기 광변환 수지 조성물 고형분 100중량부를 기준으로 상기 바인더 수지와 상기 열경화성 화합물 100중량부에 대해서 0.1 내지 40 중량부, 바람직하게는 1 내지 30 중량부로 포함될 수 있다. 상기 경화 촉진제의 함량이 상기 범위를 만족하는 경우, 이를 포함하는 광변환 수지 조성물이 고감도화되어 도막의 경화시간이 단축되므로 생산성이 향상되며 높은 신뢰성을 구현할 수 있는 이점이 있으며, 이를 이용하여 형성된 도막의 강도와 상기 도막부의 표면 평활성이 양호해질 수 있는 이점이 있다. 반대로, 상기 경화 촉진제의 함량이 상기 범위 미만으로 포함되는 경우에는 경화도 저하가 극복되지 못해, 후공정 중 주름이 발생할 수 있으며, 상기 범위를 초과할 경우에는 광변환 수지 조성물의 발광특성이 저하되어 휘도가 부족해지는 문제점이 있다.The curing accelerator may be included in an amount of 0.1 to 40 parts by weight, preferably 1 to 30 parts by weight, based on 100 parts by weight of the light conversion resin composition solids, based on 100 parts by weight of the binder resin and the thermosetting compound. When the content of the curing accelerator satisfies the above range, the photoconversion resin composition comprising the same is highly sensitive, thereby shortening the curing time of the coating film, thus improving productivity and implementing high reliability, and thus forming a coating film The strength and the surface smoothness of the coating portion has an advantage that can be good. On the contrary, when the content of the curing accelerator is included in less than the above range, the decrease in the degree of curing may not be overcome, and wrinkles may occur during the post-process, and when the content exceeds the above range, the light emission characteristics of the photoconversion resin composition may be deteriorated. There is a problem that the luminance is insufficient.
용제solvent
본 발명에 따른 광변환 수지 조성물은 용제를 포함할 수 있다.The light conversion resin composition according to the present invention may contain a solvent.
본 발명의 광변환 수지 조성물에 함유되는 용제는 통상 1종 내지 2종 이상을 포함할 수 있으며, 특히 비점이 100 내지 180℃인 용제가 전체 용제 대비 50% 이상 포함되는 경우, 흐름특성이 우수해져 코팅얼룩 및 건조이물이 발생하지 않아, 코팅이물이 없는 양호한 광변환 적층기재를 제공할 수 있다. The solvent contained in the photoconversion resin composition of the present invention may generally include one or two or more kinds, especially when the solvent having a boiling point of 100 to 180 ° C. is contained at least 50% of the total solvent, the flow characteristics are excellent. Since no coating stains and dry foreign matters can be provided, it is possible to provide a good light conversion laminate having no coating foreign matters.
구체적인 예로는 에테르류, 방향족 탄화수소류, 케톤류, 알코올류, 에스테르류 및 아미드류 등으로 이루어진 군으로부터 선택되는 1종 이상을 포함할 수 있고, 구체적으로 프로필렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 메시틸렌, 메틸아밀케톤, 메틸이소부틸케톤 및 3-에톡시프로피온산 에틸, 1,3-부틸렌글라이콜디아세테이트, 에틸-3-에톡시프로피오네이트, 프로필렌 글리콜 디아세테이트, 에틸렌글리콜 모노프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 디에틸에테르, 메톡시부틸 아세테이트, 에틸렌글리콜 및 γ-부티롤락톤등으로 이루어진 군으로부터 선택된 1종 내지 2종 이상일 수 있다. Specific examples may include one or more selected from the group consisting of ethers, aromatic hydrocarbons, ketones, alcohols, esters and amides, and specifically, propylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether , Ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, mesitylene, methyl amyl ketone, methyl isobutyl ketone and ethyl 3-ethoxypropionate, 1,3-butylene glycol diacetate, ethyl- From the group consisting of 3-ethoxypropionate, propylene glycol diacetate, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, methoxybutyl acetate, ethylene glycol and γ-butyrolactone It may be selected from one type or two or more types.
상기 비점이 100℃ 미만인 용제가 전체 용제의 50% 이상인 경우 건조 속도가 빨라 Vacuum Dry 공정시 도막표면에 얼룩이 발생하여 불량을 야기할 수 있는 반면, 비점이 180℃를 초과하는 용제가 전체 용제의 50% 이상인 경우 Vacuum Dry 공정시 소요시간(Tact-time)이 길어지는 문제를 야기할 수 있다. 그러므로 전체 용제의 50% 이상의 용제는 비점이 100 내지 180℃인 용제를 사용 하는 것이 적절하다. If the solvent having a boiling point of less than 100 ° C. is more than 50% of the total solvent, the drying speed is high, and staining may occur on the surface of the coating film during the vacuum drying process, while a solvent having a boiling point of more than 180 ° C. is more than 50% of the total solvent. If it is more than%, it may cause a problem in that the time required for the vacuum drying process is long. Therefore, it is appropriate to use a solvent having a boiling point of 100 to 180 ° C. over 50% of the total solvent.
상기 용제는 상기 광변환 수지 조성물 100중량%에 대하여 50 내지 90중량%, 바람직하게는 60 내지 85중량%로 포함 될 수 있다. 상기 용제가 상기 범위 내로 포함되면 롤 코터, 스핀 코터, 슬릿 앤드 스핀 코터, 슬릿 코터(다이 코터라고도 하는 경우가 있음), 잉크젯 등의 도포 장치로 도포했을 때 도포성이 양호해질 수 있다.The solvent may be included in 50 to 90% by weight, preferably 60 to 85% by weight relative to 100% by weight of the light conversion resin composition. When the solvent is included in the above range, the coating property may be improved when applied with a coating device such as a roll coater, spin coater, slit and spin coater, slit coater (sometimes referred to as die coater), inkjet, or the like.
첨가제additive
본 발명에 따른 광변환 수지 조성물은 다양한 목적으로 인해 공지의 첨가제를 더 포함할 수 있다. 이러한 첨가제로는 예컨대, 충진제, 경화보조제, 다른 고분자 화합물, 밀착 촉진제, 산화방지제, 자외선 흡수제, 응집 방지제 등의 첨가제를 병행하는 것도 가능하다. 이들 첨가제는 1종 또는 2종 이상이 가능하며, 광 효율 등을 고려하여 전체 조성물 내에서 1 중량% 이하로 사용하는 것이 바람직하다.The photoconversion resin composition according to the present invention may further include known additives for various purposes. As such additives, for example, fillers, curing aids, other polymer compounds, adhesion promoters, antioxidants, ultraviolet absorbers, anti-agglomerating agents and the like can also be used in combination. These additives may be used alone or in combination of two or more, and in consideration of light efficiency and the like, it is preferable to use 1 wt% or less in the total composition.
상기 충진제로는 유리, 실리카, 알루미나 등이 가능하고, 폴리비닐알코올, 폴리아크릴산, 폴리에틸렌글리콜 모노알킬에테르, 폴리플루오로알킬아크릴레이트, 폴리에스테르, 폴리우레탄 등의 열가소성 수지 등을 들 수 있다.The filler may be glass, silica, alumina, or the like, and thermoplastic resins such as polyvinyl alcohol, polyacrylic acid, polyethylene glycol monoalkyl ether, polyfluoroalkyl acrylate, polyester, polyurethane, and the like can be given.
상기 다른 고분자 화합물로서는 구체적으로 말레이미드 수지 등의 경화성 수지, 폴리비닐알코올, 폴리아크릴산, 폴리에틸렌글리콜모노알킬에테르, 폴리플루오로알킬아크릴레이트, 폴리에스테르, 폴리우레탄 등의 열가소성 수지 등을 들 수 있다. Specifically as said other high molecular compound, curable resin, such as a maleimide resin, polyvinyl alcohol, polyacrylic acid, polyethyleneglycol monoalkyl ether, polyfluoroalkylacrylate, polyester, a thermoplastic resin, such as a polyurethane, etc. are mentioned.
상기 밀착 촉진제로서, 예를 들면 비닐트리메톡시실란, 비닐트리에톡시실란, 비닐트리스(2-메톡시에톡시)실란, N-(2-아미노에틸)-3-아미노프로필메틸디메톡시실란, N-(2-아미노에틸)-3-아미노프로필트리메톡시실란, 3-아미노프로트리에톡시실란, 3-글리시독시프로필트리메톡시실란, 3-글리시독시프로필메틸디메톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 3-클로로프로필메틸디메톡시실란, 3-클로로프로필트리메톡시실란, 3-메타크릴옥시프로필트리메톡시실란, 3-머캅토프로필트리메톡시실란 등을 들 수 있다. As the adhesion promoter, for example, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminoprotriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2 -(3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyl Trimethoxysilane etc. are mentioned.
상기 산화 방지제로서는 구체적으로 2,2'-티오비스(4-메틸-6-t-부틸페놀), 2,6-디-t-부틸-4-메틸페놀 등을 들 수 있다.Specific examples of the antioxidant include 2,2'-thiobis (4-methyl-6-t-butylphenol), 2,6-di-t-butyl-4-methylphenol, and the like.
상기 자외선 흡수제로서는 구체적으로 2-(3-tert-부틸-2-히드록시-5-메틸페닐)-5-클로로벤조티리아졸, 알콕시벤조페논 등이 가능하며, 응집 방지제로서는 구체적으로 폴리아크릴산 나트륨 등을 들 수 있다.Specific examples of the ultraviolet absorber include 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzothiazole, alkoxybenzophenone, and the like. Specific examples of the aggregation inhibitor include sodium polyacrylate and the like. Can be mentioned.
상기 응집 방지제로서는 구체적으로 폴리아크릴산 나트륨 등을 들 수 있다.Specific examples of the aggregation inhibitor include sodium polyacrylate and the like.
상기 첨가제는 본 발명의 효과를 저해하지 않는 범위에서 당업자가 적절히 추가하여 사용이 가능하다. 예컨대 상기 첨가제는 상기 광변환 수지 조성물 전체 100 중량부에 대하여 0.05 내지 10 중량부, 바람직하게는 0.1 내지 10 중량부, 더욱 바람직하게는 0.1 내지 5 중량부로 사용할 수 있으나 이에 한정되는 것은 아니다.The additives can be used by those skilled in the art as appropriate without departing from the effect of the present invention. For example, the additive may be used in an amount of 0.05 to 10 parts by weight, preferably 0.1 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the total photoconversion resin composition, but is not limited thereto.
<< 광변환Light conversion 적층기재> Laminated Materials>
본 발명에 따른 광변환 적층기재는 기재상에 형성된 광변환 수지 조성물의 경화물을 포함한다. 상기 광변환 적층 기재는 광변환 수지 조성물의 경화물을 포함함으로써, 유리 기재 위에 코팅층 형성 온도가 100 내지 250℃에서 보다 효과적으로 가공할 수 있으며, 기존의 복잡한 구조에 비해 휘도 및 장기 신뢰성이 우수할 수 있다.The light conversion laminated base material which concerns on this invention contains the hardened | cured material of the light conversion resin composition formed on the base material. The photoconversion laminated substrate includes a cured product of the photoconversion resin composition, so that the coating layer forming temperature on the glass substrate can be more effectively processed at 100 to 250 ° C, and may have excellent brightness and long-term reliability compared to existing complex structures. have.
상기 광변환 적층기재는 실리콘(Si), 실리콘 산화물(SiOx) 또는 고분자 기판일 수 있으며, 상기 고분자 기판은 폴리에테르설폰(polyethersulfone, PES) 또는 폴리카보네이트(polycarbonate, PC) 등일 수 있다. The photoconversion lamination substrate may be silicon (Si), silicon oxide (SiOx), or a polymer substrate, and the polymer substrate may be polyethersulfone (PES) or polycarbonate (PC).
상기 광변환 적층 기재는 상기 광변환 수지 조성물을 도포하고 열경화하여 형성 될 수 있다. The photoconversion laminated substrate may be formed by applying and thermosetting the photoconversion resin composition.
<화상표시장치><Image display device>
본 발명에 따른 화상표시장치는 전술한 광변환 적층기재를 포함한다. 상기 화상 표시 장치는 구체적으로, 액정 디스플레이(액정표시장치; LCD), 유기 EL 디스플레이(유기 EL 표시장치), 액정 프로젝터, 게임기용 표시장치, 휴대전화 등의 휴대단말용 표시장치, 디지털 카메라용 표시장치, 카 네비게이션용 표시장치 등의 표시장치 등을 들 수 있으며, 특히 컬러 표시장치가 적합하다.An image display apparatus according to the present invention includes the above-described light conversion laminated substrate. Specifically, the image display device includes a liquid crystal display (liquid crystal display device; LCD), an organic EL display (organic EL display device), a liquid crystal projector, a display device for a game machine, a display device for a mobile terminal such as a mobile phone, and a display for a digital camera. And display devices such as display devices for car navigation systems, and the like, and color display devices are particularly suitable.
상기 화상표시장치는 상기 광변환 적층기재를 구비한 것을 제외하고는 본 발명의 기술 분야에서 당 업자에게 알려진 구성을 더 포함할 수 있으며, 즉, 본 발명은 본 발명의 광변환 적층기재를 적용할 수 있는 화상표시장치를 포함한다.The image display apparatus may further include a configuration known to those skilled in the art, except that the image display apparatus is provided with the light conversion multilayer substrate, that is, the present invention is applicable to the light conversion multilayer substrate of the present invention. And an image display device which can be used.
이하, 본 명세서를 구체적으로 설명하기 위해 실시예를 들어 상세히 설명한다. 그러나, 본 명세서에 따른 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 명세서의 범위가 아래에서 상술하는 실시예들에 한정되는 것으로 해석되지는 않는다. 본 명세서의 실시예들은 당업계에서 평균적인 지식을 가진 자에게 본 명세서를 보다 완전하게 설명하기 위해 제공되는 것이다. 또한, 이하에서 함유량을 나타내는 "%" 및 "부"는 특별히 언급하지 않는 한 중량 기준이다.Hereinafter, the present invention will be described in detail with reference to Examples. However, the embodiments according to the present disclosure may be modified in various other forms, and the scope of the present specification is not to be interpreted as being limited to the embodiments described below. The embodiments of the present specification are provided to more fully describe the present specification to those skilled in the art. In addition, "%" and "part" which show content below are a basis of weight unless there is particular notice.
산란입자 분산액의 제조Preparation of Scattering Particle Dispersion
제조예Production Example 1: 산란입자 분산액 S1의 제조 1: Preparation of Scattering Particle Dispersion S1
산란입자로서 입경 220nm인 TiO2(훈츠만사 TR-88) 70.0중량부, 분산제로서 DISPERBYK-2001 (BYK사 제조) 4.0중량부, 용매로서 프로필렌글리콜메틸에테르아세테이트 26중량부를 비드밀에 의해 12시간 동안 혼합/분산하여 산란입자 분산액 S1을 제조하였다.70.0 parts by weight of TiO 2 (Huntsman TR-88) having a particle diameter of 220 nm as scattering particles, 4.0 parts by weight of DISPERBYK-2001 (manufactured by BYK) as a dispersant, and 26 parts by weight of propylene glycol methyl ether acetate as a solvent for 12 hours using a bead mill. Scattering particle dispersion S1 was prepared by mixing / dispersing.
합성예Synthesis Example 1: Green 1: Green 양자점의Quantum dots 합성(Q-1) Synthesis (Q-1)
인듐 아세테이트(Indium acetate) 0.4mmol(0.058g), 팔미트산(palmitic acid) 0.6mmol(0.15g) 및 1-옥타데센(octadecene) 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하였다. 280℃로 가열한 후, 트리스(트리메틸실릴)포스핀(TMS3P) 0.2mmol(58㎕) 및 트리옥틸포스핀 1.0mL의 혼합 용액을 신속히 주입하고 0.5분간 반응시켰다.0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid and 20 mL of 1-octadecene were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen. After heating to 280 ° C, a mixed solution of 0.2 mmol (58 µl) of tris (trimethylsilyl) phosphine (TMS 3 P) and 1.0 mL of trioctylphosphine was rapidly injected and reacted for 0.5 minutes.
이어서 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 셀레늄(Se/TOP) 4.8 mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe 코어-쉘을 형성시켰다. Then 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the InP core solution synthesized above was added, followed by 4.8 mmol of selenium (Se / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. Ethanol was added to the reaction solution cooled to room temperature rapidly, and the precipitate obtained by centrifugation was filtered under reduced pressure and dried under reduced pressure to form an InP / ZnSe core-shell.
이어서, 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 황(S/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe/ZnS 코어-쉘 구조의 양자점을 수득 후 클로로포름에 분산시켰다. Subsequently, 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. The precipitate obtained by adding ethanol to the reaction solution cooled to room temperature rapidly and centrifuged was filtered under reduced pressure and dried under reduced pressure to obtain a quantum dot having an InP / ZnSe / ZnS core-shell structure, which was then dispersed in chloroform.
얻어진 나노 양자점의 광발광 스펙트럼의 최대발광 peak는 515nm 이며, 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.50g의 (2-Butoxy-ethoxy)-acetic acid을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.The maximum emission peak of the photoluminescence spectrum of the obtained nano quantum dot is 515 nm, and 5 mL of the quantum dot solution was placed in a centrifuge tube and 20 mL of ethanol was precipitated. The supernatant was discarded by centrifugation, and 2 mL of chloroform was added to the precipitate to disperse the quantum dots, and 0.50 g of (2-Butoxy-ethoxy) -acetic acid was added thereto, followed by reaction for 1 hour while heating to 60 ° C. under nitrogen atmosphere.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 516nm 였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. The maximum emission wavelength was 516 nm.
합성예Synthesis Example 2: Green 2: green 양자점Quantum dots 합성(Q-2) Synthesis (Q-2)
합성예 1에서 합성된 양자점 클로로포름 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.5g의 O-(Succinyl)-O′-methylpolyethylene glycol 2′000(Aldrich사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.5 mL of the quantum dot chloroform solution synthesized in Synthesis Example 1 was placed in a centrifuge tube and 20 mL of ethanol was precipitated. Discard the supernatant through centrifugation and disperse the quantum dots by adding 2 mL of chloroform to the precipitate, add 0.5 g of O- (Succinyl) -O'-methylpolyethylene glycol 2'000 (Aldrich) and heat to 60 ° C under nitrogen atmosphere. Reacted for one hour.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 515nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. The maximum emission wavelength was 515 nm.
합성예Synthesis Example 3: Green 3: Green 양자점Quantum dots 합성(Q-3) Synthesis (Q-3)
인듐 아세테이트(Indium acetate) 0.4mmol(0.058g), 팔미트산(palmitic acid) 0.6mmol(0.15g) 및 1-옥타데센(octadecene) 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하였다. 280℃로 가열한 후, 트리스(트리메틸실릴)포스핀(TMS3P) 0.2mmol(58㎕) 및 트리옥틸포스핀 1.0mL의 혼합 용액을 신속히 주입하고 1분간 반응시켰다.0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid and 20 mL of 1-octadecene were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen. After heating to 280 ° C., a mixed solution of 0.2 mmol (58 μl) of tris (trimethylsilyl) phosphine (TMS3P) and 1.0 mL of trioctylphosphine was rapidly injected and reacted for 1 minute.
이어서 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 셀레늄(Se/TOP) 4.8 mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe 코어-쉘을 형성시켰다. Then 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the InP core solution synthesized above was added, followed by 4.8 mmol of selenium (Se / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. Ethanol was added to the reaction solution cooled to room temperature rapidly, and the precipitate obtained by centrifugation was filtered under reduced pressure and dried under reduced pressure to form an InP / ZnSe core-shell.
이어서, 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 황(S/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe/ZnS 코어-쉘 구조의 양자점을 수득 후 클로로포름에 분산시켰다. Subsequently, 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. The precipitate obtained by adding ethanol to the reaction solution cooled to room temperature rapidly and centrifuged was filtered under reduced pressure and dried under reduced pressure to obtain a quantum dot having an InP / ZnSe / ZnS core-shell structure, which was then dispersed in chloroform.
얻어진 나노 양자점의 광발광 스펙트럼의 최대발광 peak는 526nm 이며, 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.50g의 (2-Butoxy-ethoxy)-acetic acid을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.The maximum emission peak of the photoluminescence spectrum of the obtained nano quantum dot is 526nm, 5mL of quantum dot solution was placed in a centrifuge tube and 20mL of ethanol was precipitated. The supernatant was discarded by centrifugation, and 2 mL of chloroform was added to the precipitate to disperse the quantum dots, and 0.50 g of (2-Butoxy-ethoxy) -acetic acid was added thereto, followed by reaction for 1 hour while heating to 60 ° C. under nitrogen atmosphere.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 526nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. Maximum emission wavelength was 526 nm.
합성예Synthesis Example 4: Green 4: Green 양자점Quantum dots 합성(Q-4) Synthesis (Q-4)
합성예 3에서 합성된 클로로포름에 분산된 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.5g의 O-(Succinyl)-O′-methylpolyethylene glycol 2′000(Aldrich사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.5 mL of the quantum dot solution dispersed in chloroform synthesized in Synthesis Example 3 was placed in a centrifuge tube and 20 mL of ethanol was precipitated. Discard the supernatant through centrifugation and disperse the quantum dots by adding 2 mL of chloroform to the precipitate, add 0.5 g of O- (Succinyl) -O'-methylpolyethylene glycol 2'000 (Aldrich) and heat to 60 ° C under nitrogen atmosphere. Reacted for one hour.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 525nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. The maximum emission wavelength was 525 nm.
합성예Synthesis Example 5: Green 5: Green 양자점Quantum dots 합성예Synthesis Example (Q-5)(Q-5)
인듐 아세테이트(Indium acetate) 0.4mmol(0.058g), 팔미트산(palmitic acid) 0.6mmol(0.15g) 및 1-옥타데센(octadecene) 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하였다. 280℃로 가열한 후, 트리스(트리메틸실릴)포스핀(TMS3P) 0.2mmol(58㎕) 및 트리옥틸포스핀 1.0mL의 혼합 용액을 신속히 주입하고 1.5분간 반응시켰다.0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid and 20 mL of 1-octadecene were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen. After heating to 280 ° C, a mixed solution of 0.2 mmol (58 µl) of tris (trimethylsilyl) phosphine (TMS3P) and 1.0 mL of trioctylphosphine was rapidly injected and reacted for 1.5 minutes.
이어서 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 셀레늄(Se/TOP) 4.8 mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe 코어-쉘을 형성시켰다. Then 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the InP core solution synthesized above was added, followed by 4.8 mmol of selenium (Se / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. Ethanol was added to the reaction solution cooled to room temperature rapidly, and the precipitate obtained by centrifugation was filtered under reduced pressure and dried under reduced pressure to form an InP / ZnSe core-shell.
이어서, 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 황(S/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe/ZnS 코어-쉘 구조의 양자점을 수득 후 클로로포름에 분산시켰다. Subsequently, 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. The precipitate obtained by adding ethanol to the reaction solution cooled to room temperature rapidly and centrifuged was filtered under reduced pressure and dried under reduced pressure to obtain a quantum dot having an InP / ZnSe / ZnS core-shell structure, which was then dispersed in chloroform.
얻어진 나노 양자점의 광발광 스펙트럼의 최대발광 peak는 526nm 이며, 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.65g의 Carboxy-EG6-undecanethiol(Aldrich사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.The maximum emission peak of the photoluminescence spectrum of the obtained nano quantum dot is 526nm, 5mL of quantum dot solution was placed in a centrifuge tube and 20mL of ethanol was precipitated. The supernatant was discarded by centrifugation, and 2 mL of chloroform was added to the precipitate to disperse the quantum dots. Then, 0.65 g of Carboxy-EG6-undecanethiol (Aldrich) was added thereto and reacted for 1 hour while heating to 60 ° C. under nitrogen atmosphere.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 536nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. The maximum emission wavelength was 536 nm.
합성예Synthesis Example 6: Green 6: Green 양자점Quantum dots 합성(Q-6) Synthesis (Q-6)
합성예 5에서 합성된 클로로포름에 분산된 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.5g의 O-(Succinyl)-O′-methylpolyethylene glycol 2′000(Aldrich사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.5 mL of the quantum dot solution dispersed in chloroform synthesized in Synthesis Example 5 was placed in a centrifuge tube and 20 mL of ethanol was precipitated. Discard the supernatant through centrifugation and disperse the quantum dots by adding 2 mL of chloroform to the precipitate, add 0.5 g of O- (Succinyl) -O'-methylpolyethylene glycol 2'000 (Aldrich) and heat to 60 ° C under nitrogen atmosphere. Reacted for one hour.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분은 25%로 조정하였다. 최대발광파장은 534nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate the quantum dots, followed by centrifugation to separate the precipitate, and 4 mL of propylene glycol monomethyl ether acetate was added thereto, followed by dispersion at 80 ° C. Solids were adjusted to 25% by PGMEA. The maximum emission wavelength was 534 nm.
합성예Synthesis Example 7: Red 7: Red 양자점Quantum dots 합성예Synthesis Example (Q-7)(Q-7)
인듐 아세테이트(Indium acetate) 0.4mmol(0.058g), 팔미트산(palmitic acid) 0.6mmol(0.15g) 및 1-옥타데센(octadecene) 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하였다. 280℃로 가열한 후, 트리스(트리메틸실릴)포스핀(TMS3P) 0.2mmol(58㎕) 및 트리옥틸포스핀 1.0mL의 혼합 용액을 신속히 주입하고 5분간 반응 후 반응용액을 상온으로 신속하게 식혔다. 흡수 최대 파장 560 내지 590nm를 나타내었다.0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid and 20 mL of 1-octadecene were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen. After heating to 280 ° C, a mixture solution of 0.2 mmol (58 µl) of tris (trimethylsilyl) phosphine (TMS 3 P) and 1.0 mL of trioctylphosphine was injected rapidly, and after 5 minutes, the reaction solution was rapidly cooled to room temperature. Cooled Absorption maximum wavelength 560-590 nm was shown.
아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 셀레늄(Se/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응 후 상온으로 내려 InP/ZnSe 코어-쉘을 형성시켰다. 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the InP core solution synthesized above was added thereto, followed by 4.8 mmol of selenium (Se / TOP) in trioctylphosphine, and then the final mixture was reacted for 2 hours to form an InP / ZnSe core-shell.
이어서, 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 황(S/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe/ZnS 코어-쉘 구조의 양자점을 수득 후 클로로포름에 분산시켰다. Subsequently, 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. The precipitate obtained by adding ethanol to the reaction solution cooled to room temperature rapidly and centrifuged was filtered under reduced pressure and dried under reduced pressure to obtain a quantum dot having an InP / ZnSe / ZnS core-shell structure, which was then dispersed in chloroform.
얻어진 나노 양자점의 광발광 스펙트럼의 최대발광 peak는 628nm이며, 합성된 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.65g의 2-[2-(2-Methoxyethoxy)ethoxy]acetic acid(WAKO사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.The maximum emission peak of the photoluminescence spectrum of the obtained nano quantum dots is 628 nm, and 5 mL of the synthesized quantum dot solution was placed in a centrifuge tube and 20 mL of ethanol was precipitated. Discard the supernatant through centrifugation, disperse the quantum dots by adding 2 mL of chloroform to the precipitate, add 0.65 g of 2- [2- (2-Methoxyethoxy) ethoxy] acetic acid (WAKO), and heat to 60 ° C under nitrogen atmosphere. Reacted for one hour.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 상층액은 버리고 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분을 25%로 조정하였다. 최대발광파장은 628nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate quantum dots, followed by centrifugation to discard the supernatant, and the precipitate was separated. 4 mL of propylene glycol monomethyl ether acetate was added thereto, and the mixture was heated and heated to 80 ° C. Solids were adjusted to 25% by PGMEA. Maximum emission wavelength was 628 nm.
합성예Synthesis Example 8: Red 8: Red 양자점Quantum dots 합성(Q-8) Synthesis (Q-8)
인듐 아세테이트(Indium acetate) 0.4mmol(0.058g), 팔미트산(palmitic acid) 0.6mmol(0.15g) 및 1-옥타데센(octadecene) 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하였다. 280℃로 가열한 후, 트리스(트리메틸실릴)포스핀(TMS3P) 0.2mmol(58㎕) 및 트리옥틸포스핀 1.0mL의 혼합 용액을 신속히 주입하고 4.5분간 반응 후 반응용액을 상온으로 신속하게 식혔다. 흡수 최대 파장 550 내지 585nm를 나타내었다.0.4 mmol (0.058 g) of indium acetate, 0.6 mmol (0.15 g) of palmitic acid and 20 mL of 1-octadecene were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen. After heating to 280 ° C, a mixture solution of 0.2 mmol (58 µl) of tris (trimethylsilyl) phosphine (TMS 3 P) and 1.0 mL of trioctylphosphine was injected rapidly, and after 4.5 minutes, the reaction solution was rapidly cooled to room temperature. Cooled Absorption maximum wavelength 550-585 nm was shown.
아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 셀레늄(Se/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응 후 상온으로 내려 InP/ZnSe 코어-쉘을 형성시켰다. 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the InP core solution synthesized above was added thereto, followed by 4.8 mmol of selenium (Se / TOP) in trioctylphosphine, and then the final mixture was reacted for 2 hours to form an InP / ZnSe core-shell.
이어서, 아연 아세테이트 2.4mmoL(0.448g), 올레산 4.8mmol 및 트리옥틸아민 20mL를 반응기에 넣고 진공 하에 120℃로 가열하였다. 1시간 후 반응기 내 분위기를 질소로 전환하고 반응기를 280℃로 승온시켰다. 앞서 합성한 InP 코어 용액 2mL를 넣고, 이어서 트리옥틸포스핀 중의 황(S/TOP) 4.8mmol을 넣은 후, 최종 혼합물을 2시간 동안 반응시켰다. 상온으로 신속하게 식힌 반응 용액에 에탄올을 넣고 원심 분리하여 얻은 침전을 감압여과 후 감압 건조하여 InP/ZnSe/ZnS 코어-쉘 구조의 양자점을 수득 후 클로로포름에 분산시켰다. Subsequently, 2.4 mmol of zinc acetate (0.448 g), 4.8 mmol of oleic acid and 20 mL of trioctylamine were placed in a reactor and heated to 120 ° C. under vacuum. After 1 hour the atmosphere in the reactor was switched to nitrogen and the reactor was warmed to 280 ° C. 2 mL of the synthesized InP core solution was added, followed by 4.8 mmol of sulfur (S / TOP) in trioctylphosphine, and the final mixture was reacted for 2 hours. The precipitate obtained by adding ethanol to the reaction solution cooled to room temperature rapidly and centrifuged was filtered under reduced pressure and dried under reduced pressure to obtain a quantum dot having an InP / ZnSe / ZnS core-shell structure, which was then dispersed in chloroform.
얻어진 나노 양자점의 광발광 스펙트럼의 최대발광 peak는 616nm이며, 합성된 양자점 용액 5mL를 원심분리 튜브에 넣고 에탄올 20mL를 넣어 침전시켰다. 원심분리를 통해 상층액은 버리고 침전물에 2mL의 클로로포름을 넣어 양자점을 분산시킨 다음 0.65g의 2-[2-(2-Methoxyethoxy)ethoxy]acetic acid(WAKO사)을 넣고 질소분위기 하에서 60℃로 가열하면서 한시간 동안 반응시켰다.The maximum emission peak of the photoluminescence spectrum of the obtained nano quantum dot is 616nm, and 5mL of the synthesized quantum dot solution was placed in a centrifuge tube and 20mL of ethanol was precipitated. Discard the supernatant through centrifugation, disperse the quantum dots by adding 2 mL of chloroform to the precipitate, add 0.65 g of 2- [2- (2-Methoxyethoxy) ethoxy] acetic acid (WAKO), and heat to 60 ° C under nitrogen atmosphere. Reacted for one hour.
이어서, 반응물에 25mL의 n-헥산을 넣어 양자점을 침전시킨 후 원심분리를 실시하여 상층액은 버리고 침전물을 분리한 다음 프로필렌글리콜모노메틸에테르 아세테이트 4mL을 투입하여 80℃로 가열하면서 분산시켰다. PGMEA로 고형분을 25%로 조정하였다. 최대발광파장은 616nm였다.Subsequently, 25 mL of n-hexane was added to the reactant to precipitate quantum dots, followed by centrifugation to discard the supernatant, and the precipitate was separated. 4 mL of propylene glycol monomethyl ether acetate was added thereto, and the mixture was heated and heated to 80 ° C. Solids were adjusted to 25% by PGMEA. Maximum emission wavelength was 616 nm.
합성예Synthesis Example 9: 9: 카도계Cardo system 바인더 수지를 포함하는 바인더 수지 (E-1) Binder Resin Containing Binder Resin (E-1)
(1) 반응기에 비스페놀 에폭시 화합물인 9,9'-비스(4-글리실록시페닐)플루오렌(Hear chem社) 138g, acrylic acid 54g, 벤질트리에틸암모늄클로라이드(대정화금社) 1.4g, 트리페닐포스핀(Aldrich社) 1g, 프로필글리콜메틸 에틸아세테이트(Daicel Chemical社) 128g, 및 하이드로퀴논 0.5g을 넣고 120℃로 승온 후 12시간 유지하여, 하기 화학식 11로 표시되는 화합물을 합성하였다.(1) 138 g of 9,9'-bis (4-glysiloxyphenyl) fluorene (Hear chem), acrylic acid 54 g, benzyltriethylammonium chloride (1.4 g) of bisphenol epoxy compound, 1 g of triphenylphosphine (Aldrich Co.), 128 g of propyl glycol methyl ethyl acetate (Daicel Chemical Co.), and 0.5 g of hydroquinone were added thereto, and the mixture was maintained at 120 ° C. for 12 hours, thereby synthesizing a compound represented by the following Formula (11).
(2) 반응기에 하기 화학식 11로 표시되는 화합물 60g, 비페닐테트라카르복실산 디무수물(Mitsubishi Gas社) 11g, 테트라히드로프탈 무수물(Aldrich社) 3g, 프로필글리콜메틸에틸아세테이트(Daicel Chemical社) 20g, 및 N,N'-테트라메틸암모늄 클로라이트 0.1g을 넣고 120℃로 승온 후 2시간 유지하여, 하기 화학식 12로 표시되는 화합물을 합성하였다. 얻어진 하기 화학식 12로 표시되는 화합물의 중량평균 분자량은 5,400 g/mol 이었다. 산가는 95㎎KOH/g 였다.(2) 60 g of the compound represented by the following formula (11), 11 g of biphenyltetracarboxylic acid dianhydride (Mitsubishi Gas), 3 g of tetrahydrophthal anhydride (Aldrich), and 20 g of propyl glycol methyl ethyl acetate (Daicel Chemical) , And 0.1 g of N, N'-tetramethylammonium chlorite were added and then maintained at 120 ° C. for 2 hours to synthesize a compound represented by the following Formula 12. The weight average molecular weight of the obtained compound represented by the following formula (12) was 5,400 g / mol. The acid value was 95 mgKOH / g.
[화학식 11][Formula 11]
[화학식 12][Formula 12]
합성예Synthesis Example 10: 10: 카도계Cardo system 바인더 수지를 포함하는 바인더 수지 (E-2) Binder Resin Containing Binder Resin (E-2)
(1) 하기 화학식 13의 화합물을 합성하기 위하여 3000ml 삼구 라운드 플라스크에 4,4′′-(9H-잔텐-9,9-디일)디페놀(4,4′′-(9H-xanthene-9,9-diyl)diphenol) 364.4g과 t-부틸암모늄 브로마이드 0.4159g을 혼합하고, 에피클로로히드린 2359g을 넣고 90℃℃로 가열하여 반응시켰다. 액체크로마토그래피로 분석하여 4,4′′-(9H-잔텐-9,9-디일)디페놀(4,4′′-(9H-xanthene-9,9-diyl)diphenol)이 완전히 소진되면 30℃℃로 냉각하여 50% NaOH 수용액(3당량)을 천천히 첨가하였다. 액체 크로마토그래피로 분석하여 에피클로로히드린이 완전히 소진되었으면, 디클로로메탄으로 추출한 후 3회 수세한 후 유기층을 황산마그네슘으로 건조시킨 후 디클로로메탄을 감압 증류하고 디클로로메탄과 메탄올 혼합비 50:50을 사용하여 재결정하였다.(1) 4,4 '′-(9H-xanthene-9,9-diyl) diphenol (4,4 ′ ′-(9H-xanthene-9, 364.4 g of 9-diyl) diphenol) and 0.4159 g of t-butylammonium bromide were mixed, and 2359 g of epichlorohydrin was added thereto, followed by heating to 90 ° C. After liquid chromatography, 4,4 ′ ′-(9H-xanthene-9,9-diyl) diphenol was exhausted. Cool to 占 폚 and slowly add 50% aqueous NaOH solution (3 equiv). After epichlorohydrin was completely exhausted by liquid chromatography, the mixture was extracted with dichloromethane and washed three times. The organic layer was dried over magnesium sulfate, and dichloromethane was distilled under reduced pressure, and the mixture ratio of dichloromethane and methanol was 50:50. Recrystallized.
이렇게 합성된 에폭시 화합물 1당량과 t-부틸암모늄 브로마이드 0.004당량, 2,6-디이소부틸페놀 0.001당량, 아크릴산 2.2당량을 혼합한 후 용매 프로필렌글리콜모노메틸에테르아세테이트 24.89g을 넣어 혼합하였다. 이 반응 용액에 공기를 25ml/min으로 불어넣으면서 온도를 95℃로 가열 용해하였다. 반응 용액이 백탁한 상태에서 온도를 120℃까지 가열하여 완전히 용해시켰다. 용액이 투명해지고 점도가 높아지면 산가를 측정하여 산가가 1.0mgKOH/g 미만이 될 때까지 교반하였다. 산가가 목표(0.8)에 이를 때까지 11시간이 필요했다. 반응 종결 후 반응기의 온도를 실온으로 내려 무색 투명한 화합물을 얻었다.Thus, 1 equivalent of the epoxy compound, 0.004 equivalent of t-butylammonium bromide, 0.001 equivalent of 2,6-diisobutylphenol and 2.2 equivalent of acrylic acid were mixed, and then 24.89 g of solvent propylene glycol monomethyl ether acetate was added thereto and mixed. The temperature was melt | dissolved by heating at 95 degreeC, blowing air into this reaction solution at 25 ml / min. In the state where the reaction solution was cloudy, the temperature was heated to 120 ° C. to completely dissolve it. When the solution became clear and the viscosity became high, the acid value was measured and stirred until the acid value became less than 1.0 mgKOH / g. It took 11 hours to reach the target (0.8). After completion of the reaction, the temperature of the reactor was lowered to room temperature to obtain a colorless transparent compound.
[화학식 13][Formula 13]
(2) 상기 화학식 13의 화합물 307.0g에 프로필렌글리콜모노메틸에테르아세테이트 600g을 첨가하여 용해한 후, 비페닐테트라카르복실산 2무수물 78g 및 브롬화테트라에틸암모늄 1g을 혼합하고 서서히 승온시켜 110℃에서 4시간 동안 반응시켰다. 산 무수물기의 소실을 확인한 후, 1,2,3,6-테트라히드로무수프탈산 38.0g을 혼합하여 90℃에서 6시간 동안 반응시켜 카도계 바인더 수지로 중합하였다. 무수물의 소실은 IR 스펙트럼에 의해 확인하였다. 산가는 120㎎KOH/g 이였다.(2) After dissolving by adding 600 g of propylene glycol monomethyl ether acetate to 307.0 g of the compound of Formula 13, 78 g of biphenyl tetracarboxylic dianhydride and 1 g of tetraethylammonium bromide were mixed and gradually warmed up to 4 hours at 110 ° C. Reacted for a while. After confirming the disappearance of the acid anhydride group, 38.0 g of 1,2,3,6-tetrahydrophthalic anhydride was mixed and reacted at 90 ° C. for 6 hours to polymerize with a cardo-based binder resin. Loss of anhydride was confirmed by IR spectrum. The acid value was 120 mgKOH / g.
합성예Synthesis Example 11: 11: 카도계Cardo system 바인더 수지를 포함하는 바인더 수지 (E-3) Binder Resin Containing Binder Resin (E-3)
(1) 3구 플라스크에 환류 냉각기와 온도계를 설치한 후, 9,9-비스페놀플루오렌(9,9-Bisphenolfluorene) 42.5g를 넣고 2-(클로로메틸)옥시란(2-(chloromethyl)oxirane) 220mL를 정량한 후 주입하였다. 테트라부틸암모늄 브로마이드(Tetrabutylammonium bromide) 100mg을 넣은 후, 교반을 시작하면서 온도를 90℃로 승온하였다. 미반응물 함량이 0.3% 미만임을 확인 후 감압증류 하였다.(1) After installing a reflux condenser and thermometer in a three-necked flask, add 42.5 g of 9,9-bisphenolfluorene and 2- (chloromethyl) oxirane. 220 mL was quantified and injected. After adding 100 mg of tetrabutylammonium bromide, the temperature was raised to 90 ° C. while starting stirring. After confirming that the unreactant content is less than 0.3%, the product was distilled under reduced pressure.
온도를 30℃로 낮춘 후, 디클로로메탄(dichloromethane)을 주입하고, NaOH를 서서히 투입하였다. 생성물이 96% 이상인 것을 고성능액체크로마토그래피(HPLC)방법으로 확인한 후 5% HCl를 적하하여 반응을 종결하였다. 반응물은 추출하여 층분리한 후, 유기층을 물로 씻어주고 중성이 되도록 세척하였다. 유기층은 MgSO4로 건조한 후 회전증발기로 감압 증류하여 농축하였다. 농축된 생성물에 디클로로메테인(dichloromethane)을 넣고 40℃까지 온도를 올리면서 교반하면서 메탄올(methanol)를 투입한 후 용액온도를 낮추고 교반하였다. 생성된 고체를 여과한 후, 상온에서 진공 건조하여 흰색 고체 분말 52.7g(수율 94%)을 얻었다, 이에 대한 구조는 1H NMR로 확인하였다.After the temperature was lowered to 30 ° C., dichloromethane was injected and NaOH was slowly added thereto. After confirming that the product was 96% or more by high performance liquid chromatography (HPLC) method, 5% HCl was added dropwise to terminate the reaction. After the reaction was extracted and separated, the organic layer was washed with water and washed to be neutral. The organic layer was dried over MgSO 4 and concentrated by distillation under reduced pressure with a rotary evaporator. Dichloromethane was added to the concentrated product, methanol was added while stirring while raising the temperature to 40 ° C, and the solution temperature was lowered and stirred. The resulting solid was filtered and dried in vacuo at room temperature to give 52.7 g (94% yield) of a white solid powder, the structure of which was confirmed by 1 H NMR.
[반응식 1]Scheme 1
1H NMR in CDCl3: 7.75 (2H), 7.35-7.254(6H), 7.08 (4H), 6.74 (4H), 4.13 (2H), 3.89 (2H), 3.30 (2H), 2.87 (2H), 2.71 (2H).1 H NMR in CDCl 3: 7.75 (2H), 7.35-7.254 (6H), 7.08 (4H), 6.74 (4H), 4.13 (2H), 3.89 (2H), 3.30 (2H), 2.87 (2H), 2.71 (2H ).
(2) 3,3'-(((9H-플루오렌-9,9-디일)비스(4,1-페닐렌))비스(옥시))비스(1-페닐티오)프로판-2-올)(3,3'-(((9H-fluorene-9,9-diyl)bis(4,1-phenylene))bis(oxy))bis(1-(phenylthio)propan-2-ol)) 합성.(2) 3,3 '-(((9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (oxy)) bis (1-phenylthio) propan-2-ol) Synthesis of (3,3 '-(((9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (oxy)) bis (1- (phenylthio) propan-2-ol)).
3구 플라스크에 환류 냉각기와 온도계를 설치한 후 1단계 반응물 (1000g), thiophenol 524g, 에탄올 617g을 넣고 교반하였다. 반응 용액에 트리에틸아민(triethylamine) 328g을 천천히 적가하였다. 고성능액체크로마토그래피(HPLC)방법으로 출발물질이 사라진 것을 확인한 후, 반응을 종료하였다. 반응 완료 후, 에탄올을 감압증류하여 제거하였다. 유기물을 디클로로메테인(dichloromethane)에 녹인 후 물로 세척한 후 디클로로메테인(dichloromethane)을 감압증류를 통해 제거하였다. 농축된 유기물은 에틸 아세테이트(ethyl acetate)에 녹인 후 에테르 용매를 적가하고 30분 동안 교반하였다. 화합물을 감압증류하여 옅은 노란색 오일(pale yellow oil) 945 g (수율 64%)을 얻었고, 이의 구조는 1H NMR로 확인하였다.After installing a reflux condenser and a thermometer in a three-necked flask, the reaction mixture (1000g), 524g of thiophenol, and 617g of ethanol were added thereto and stirred. 328 g of triethylamine was slowly added dropwise to the reaction solution. After confirming that the starting material disappeared by high performance liquid chromatography (HPLC) method, the reaction was terminated. After the reaction was completed, ethanol was removed by distillation under reduced pressure. The organics were dissolved in dichloromethane, washed with water, and then dichloromethane was removed by distillation under reduced pressure. The concentrated organics were dissolved in ethyl acetate and ether ether was added dropwise and stirred for 30 minutes. The compound was distilled under reduced pressure to obtain 945 g (yield 64%) of pale yellow oil, and its structure was confirmed by 1 H NMR.
[반응식 2]Scheme 2
1H NMR in CDCl3: 7.82 (2H), 7.38-6.72 (20H), 6.51 (4H), 4.00 (2H), 3.97 (2H), 3.89 (2H), 3.20 (2H), 3.01 (2H), 2.64 (2H).1 H NMR in CDCl 3: 7.82 (2H), 7.38-6.72 (20H), 6.51 (4H), 4.00 (2H), 3.97 (2H), 3.89 (2H), 3.20 (2H), 3.01 (2H), 2.64 (2H ).
(3) 바인더 수지 합성(3) binder resin synthesis
3구 플라스크에 환류 냉각기와 온도계를 설치한 후, 50% PGMEA 용매에 녹아있는 2단계에서 합성한 3,3'-(((9H-플루오렌-9,9-디일)비스(4,1-페닐렌))비스(옥시))비스(1-페닐티오)프로판-2-올)(3,3'-(((9H-fluorene-9,9-diyl)bis(4,1-phenylene))bis(oxy))bis(1-(phenylthio)propan-2-ol)) 모노머 200g을 넣고 115℃℃까지 승온시켰다. 115℃℃에서 3,3,'4,4'-비페닐테트라카복실릭 디안하이드리드(3,3',4,4'-Biphenyltetracarboxylic dianhydride) 31.1g을 적하한 후, 6시간 동안 115℃를 유지하면서 교반시켰다. 프탈릭 안하이드리드(Phthalic anhydride) 7.35g를 넣고 2시간 더 교반한 후, 반응을 종료하였다. 냉각 후 중량평균 분자량 3,500 g/mol인 바인더 수지를 얻었다. 산가는 150㎎KOH/g 이였다.After installing a reflux condenser and a thermometer in a three-necked flask, 3,3 '-(((9H-fluorene-9,9-diyl) bis (4,1-) synthesized in step 2 dissolved in 50% PGMEA solvent. Phenylene)) bis (oxy)) bis (1-phenylthio) propan-2-ol) (3,3 '-(((9H-fluorene-9,9-diyl) bis (4,1-phenylene)) 200 g of bis (oxy)) bis (1- (phenylthio) propan-2-ol)) monomer was added thereto, and the temperature was increased to 115 ° C. 31.1 g of 3,3, '4,4'-biphenyltetracarboxylic dianhydride (3,3', 4,4'-Biphenyltetracarboxylic dianhydride) was added dropwise at 115 ° C, and then maintained at 115 ° C for 6 hours. While stirring. 7.35 g of phthalic anhydride was added thereto, stirred for another 2 hours, and the reaction was terminated. After cooling, a binder resin having a weight average molecular weight of 3,500 g / mol was obtained. The acid value was 150 mg KOH / g.
합성예Synthesis Example 12: 에폭시 함유 아크릴계 바인더 수지를 포함하는 바인더 수지(E-4) 12: binder resin (E-4) containing an epoxy-containing acrylic binder resin
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 2g, 아크릴산 18g, p-비닐톨루엔 37.9g, 메틸메타아크릴레이트 10g, 글리시딜메타아크릴레이트 34.1g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 2 g of 2,2'-azobisisobutyronitrile, 18 g of acrylic acid, into a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. 37.9 g of p-vinyl toluene, 10 g of methyl methacrylate, 34.1 g of glycidyl methacrylate, and 3 g of n-dodecyl mercaptan were added and nitrogen-substituted.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 140㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 13110이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 140 mgKOH / g and the weight average molecular weight Mw measured by GPC was about 13110.
합성예Synthesis Example 13: 에폭시 함유 아크릴계 바인더 수지를 포함하는 바인더 수지(E-5) 13: Binder resin (E-5) containing epoxy containing acrylic binder resin
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 2g, 아크릴산 15g, p-비닐톨루엔 15.0g, 메틸메타아크릴레이트 20g, 글리시딜메타아크릴레이트 50.0g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 2 g of 2,2'-azobisisobutyronitrile, 15 g of acrylic acid, in a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. 15.0 g of p-vinyl toluene, 20 g of methyl methacrylate, 50.0 g of glycidyl methacrylate, and 3 g of n-dodecyl mercaptan were added and nitrogen-substituted.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 115㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 13110이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 115 mgKOH / g, and the weight average molecular weight Mw measured by GPC was about 13110.
합성예Synthesis Example 14: 에폭시 함유 아크릴계 바인더 수지를 포함하는 바인더 수지(E-6) 14: binder resin (E-6) containing an epoxy-containing acrylic binder resin
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 2g, 아크릴산 16g, p-비닐톨루엔 14.0g, 메틸메타아크릴레이트 20g, 7-옥사비시클로[4.1.0]헵탄-3-일메틸 아크릴레이트(7-Oxabicyclo[4.1.0]heptan-3-ylmethyl acrylate) 50.0g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 2 g of 2,2'-azobisisobutyronitrile, 16 g of acrylic acid, in a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. 14.0 g of p-vinyltoluene, 20 g of methyl methacrylate, 50.0 g of 7-oxabicyclo [4.1.0] heptan-3-ylmethyl acrylate (7-Oxabicyclo [4.1.0] heptan-3-ylmethyl acrylate), 3 g of n-dodecyl mercaptan was added and nitrogen-substituted.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 125㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 11110이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 125 mgKOH / g, and the weight average molecular weight Mw measured by GPC was about 11110.
합성예Synthesis Example 15: 에폭시 함유 아크릴계 바인더 수지를 포함하는 바인더 수지(E-7) 15: binder resin (E-7) containing epoxy-containing acrylic binder resin
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 3.5g, 아크릴산 16g, p-비닐톨루엔 14.0g, 메틸메타아크릴레이트 20g, 글리시딜메타아크릴레이트 20.0g, 7-옥사비시클로[4.1.0]헵탄-3-일메틸 아크릴레이트(7-Oxabicyclo[4.1.0]heptan-3-ylmethyl acrylate) 20.0g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 3.5 g of 2,2'-azobisisobutyronitrile, 16 g of acrylic acid in a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. , p-vinyltoluene 14.0 g, methyl methacrylate 20 g, glycidyl methacrylate 20.0 g, 7-oxabicyclo [4.1.0] heptan-3-ylmethyl acrylate (7-Oxabicyclo [4.1.0] 20.0 g of heptan-3-ylmethyl acrylate) and 3 g of n-dodecyl mercaptan were added thereto, followed by nitrogen substitution.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 98㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 8090이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 98 mgKOH / g, and the weight average molecular weight Mw measured by GPC was about 8090.
합성예Synthesis Example 16: 에폭시 함유 아크릴계 바인더 수지를 포함하는 바인더 수지(E-8)의 합성 16: Synthesis of Binder Resin (E-8) Containing Epoxy-Containing Acrylic Binder Resin
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 1.2g, 아크릴산 16g, p-비닐톨루엔 14.0g, 메틸메타아크릴레이트 20g, 3-비닐-7-옥사-비시클로[4.1.0]헵탄(3-Vinyl-7-oxa-bicyclo[4.1.0]heptane) 50.0g, n-도데실머캅탄 1.5g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 1.2 g of 2,2'-azobisisobutyronitrile and 16 g of acrylic acid in a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. , 14.0 g of p-vinyltoluene, 20 g of methyl methacrylate, 50.0 g of 3-vinyl-7-oxa-bicyclo [4.1.0] heptane, 1.5 g of n-dodecyl mercaptan was added and nitrogen-substituted.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 98㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 18090이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 98 mgKOH / g and the weight average molecular weight Mw measured by GPC was about 18090.
합성예Synthesis Example 17: 바인더 수지(E-9) 17: binder resin (E-9)
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 2g, 아크릴산 5g, 벤질메타크릴레이트 35.0g, 메틸메타아크릴레이트 60g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 2 g of 2,2'-azobisisobutyronitrile, 5 g of acrylic acid, into a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. 35.0 g of benzyl methacrylate, 60 g of methyl methacrylate, and 3 g of n-dodecyl mercaptan were added thereto, followed by nitrogen substitution.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 40㎎KOH/g 이며 GPC로 측정한 중량 평균 분자량 Mw는 약 12370이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 40 mgKOH / g and the weight average molecular weight Mw measured by GPC was about 12370.
합성예Synthesis Example 18: 바인더 수지(E-10) 18: binder resin (E-10)
교반기, 온도계 환류 냉각관, 적하 로트 및 질소 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르 아세테이트 120g, 프로필렌글리콜모노메틸에테르 80g, 2,2'-아조비스이소부티로나이트릴 2g, 아크릴산 20g, 벤질메타크릴레이트 30.0g, 메틸메타아크릴레이트 50g, n-도데실머캅탄 3g을 투입하고 질소 치환하였다. 120 g of propylene glycol monomethyl ether acetate, 80 g of propylene glycol monomethyl ether, 2 g of 2,2'-azobisisobutyronitrile, 20 g of acrylic acid, into a flask equipped with a stirrer, a thermometer reflux condenser, a dropping lot and a nitrogen introduction tube. 30.0 g of benzyl methacrylate, 50 g of methyl methacrylate, and 3 g of n-dodecyl mercaptan were added and nitrogen-substituted.
그 후 교반하며 반응액의 온도를 80℃로 상승시키고 8시간 반응하였다. 이렇게 합성된 바인더 수지의 고형분 산가는 160㎎KOH/g이며 GPC로 측정한 중량 평균 분자량 Mw는 약 11874이었다.After stirring, the temperature of the reaction solution was raised to 80 ° C. and reacted for 8 hours. The solid acid value of the binder resin thus synthesized was 160 mgKOH / g and the weight average molecular weight Mw measured by GPC was about 11874.
광변환Light conversion 수지 조성물의 제조: Preparation of Resin Compositions: 실시예Example 1 내지 24 및 1 to 24 and 비교예Comparative example 1 내지 7 1 to 7
하기 표 1 내지 표 3의 성분 및 함량(중량%)을 사용하여 실시예 및 비교예에 따른 광변환 수지 조성물을 제조하였다.Using the components and contents (% by weight) of Tables 1 to 3, a photoconversion resin composition was prepared according to Examples and Comparative Examples.
용액1) Quantum dots
Solution 1)
입자2) spawning
Particles 2)
촉진제4) Hardening
Accelerator 4)
Q-9: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 560nm, 반치폭 80nm, Aldrich사)
Q-10: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 600nm, 반치폭 80nm, Aldrich사)
2) 제조예 1 제조된 산란입자 분산액
3) 합성예 11 내지 합성예 20에서 제조된 열경화성 수지
4) 1,2,4-벤젠트리카르복실산 무수물
5) 프로필렌글리콜모노메틸에테르아세테이트1) Q-1 to Q-8: Quantum dot dispersions prepared in Synthesis Examples 1 to 8
Q-9: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 560nm, half width 80nm, Aldrich)
Q-10: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 600nm, half width 80nm, Aldrich)
2) Preparation Example 1 Prepared Scattering Particle Dispersion
3) Thermosetting resins prepared in Synthesis Examples 11 to 20
4) 1,2,4-benzenetricarboxylic acid anhydride
5) Propylene Glycol Monomethyl Ether Acetate
용액1) Quantum dots
Solution 1)
입자2) spawning
Particles 2)
촉진제4) Hardening
Accelerator 4)
Q-9: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 560nm, 반치폭 80nm, Aldrich사)
Q-10: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 600nm, 반치폭 80nm, Aldrich사)
2) 제조예 1 제조된 산란입자 분산액
3) 합성예 11 내지 합성예 20에서 제조된 열경화성 수지
4) 1,2,4-벤젠트리카르복실산 무수물
5) 프로필렌글리콜모노메틸에테르아세테이트1) Q-1 to Q-8: Quantum dot dispersions prepared in Synthesis Examples 1 to 8
Q-9: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 560nm, half width 80nm, Aldrich)
Q-10: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 600nm, half width 80nm, Aldrich)
2) Preparation Example 1 Prepared Scattering Particle Dispersion
3) Thermosetting resins prepared in Synthesis Examples 11 to 20
4) 1,2,4-benzenetricarboxylic acid anhydride
5) Propylene Glycol Monomethyl Ether Acetate
용액1) Quantum dots
Solution 1)
입자2) spawning
Particles 2)
촉진제4) Hardening
Accelerator 4)
Q-9: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 560nm, 반치폭 80nm, Aldrich사)
Q-10: InP/ZnS oleylamine ligand 톨루엔 용액(발광중심파장 600nm, 반치폭 80nm, Aldrich사)
2) 제조예 1 제조된 산란입자 분산액
3) 합성예 11 내지 합성예 20에서 제조된 열경화성 수지
4) 1,2,4-벤젠트리카르복실산 무수물
5) 프로필렌글리콜모노메틸에테르아세테이트1) Q-1 to Q-8: Quantum dot dispersions prepared in Synthesis Examples 1 to 8
Q-9: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 560nm, half width 80nm, Aldrich)
Q-10: InP / ZnS oleylamine ligand toluene solution (luminescence center wavelength 600nm, half width 80nm, Aldrich)
2) Preparation Example 1 Prepared Scattering Particle Dispersion
3) Thermosetting resins prepared in Synthesis Examples 11 to 20
4) 1,2,4-benzenetricarboxylic acid anhydride
5) Propylene Glycol Monomethyl Ether Acetate
실험예Experimental Example
상기 실시예 및 비교예에서 제조된 광변환 수지 조성물을 이용하여 아래와 같이 광변환 코팅층을 제조하였으며, 이때의 휘도, 광유지율, 색재현성, 내열성 및 도막 경도를 하기와 같은 방법으로 측정하고, 그 평가 결과는 하기 표 4에 기재하였다.The photoconversion coating layer was prepared using the photoconversion resin compositions prepared in Examples and Comparative Examples as follows, and the brightness, light retention, color reproducibility, heat resistance, and coating film hardness at this time were measured and evaluated. The results are shown in Table 4 below.
(1) (One) 광변환Light conversion 코팅층의 제조 Preparation of Coating Layer
실시예 및 비교예에서 제조된 광변환 수지 조성물을 이용하여 코팅막을 제조하였다. 즉, 상기 각각의 광변환 수지 조성물을 스핀 코팅법으로 5cm×5cm 유리 기판 위에 도포한 다음, 가열판 위에 놓고 100℃의 온도에서 10분간 유지하여 박막을 형성 시킨 후 180℃의 가열 오븐에서 30분 동안 가열하여 광변환 코팅층을 제조하였다. 상기에서 제조된 광변환 수지막의 두께는 양자점의 함량에 따라 10㎛ 두께로 제작하였다.The coating film was prepared using the light conversion resin composition prepared in Examples and Comparative Examples. That is, each of the photoconversion resin composition is applied on a 5cm × 5cm glass substrate by spin coating, then placed on a heating plate and maintained at a temperature of 100 ° C. for 10 minutes to form a thin film, followed by 30 minutes in a heating oven at 180 ° C. The light conversion coating layer was prepared by heating. The thickness of the photoconversion resin film prepared above was produced in a thickness of 10 ㎛ depending on the content of the quantum dot.
(2) 휘도 평가(2) luminance evaluation
상기 (1)에서 제조된 코팅막을 Blue 광원(XLamp XR-E LED, Royal blue 450, Cree 社)상부에 위치 시킨 후 휘도 측정기(CAS140CT Spectrometer, Instrument systems 社)를 이용하여, 휘도를 측정하고, 그 평가 결과는 하기 표 4에 기재하였다.The coating film prepared in (1) was placed on top of a blue light source (XLamp XR-E LED, Royal blue 450, Cree, Inc.), and then measured by using a luminance meter (CAS140CT Spectrometer, Instrument systems, Inc.). The evaluation results are shown in Table 4 below.
(3) (3) 광유지율Mineral retention
상기 광변환 코팅층 제조방법으로 제작된 코팅기판을 하드베이크(Hard bake)를 230℃에서 60분간 진행하여, 하드베이크 전의 발광효율과 하드베이크 후의 발광효율을 측정하고 발광효율이 유지되는 수준을 확인하고, 그 평가 결과는 하기 표 4에 기재하였다.Hard bake the coating substrate produced by the light conversion coating layer manufacturing method at 230 ° C. for 60 minutes to measure the luminous efficiency before hard bake and the luminous efficiency after hard bake and check the level at which luminous efficiency is maintained. , The evaluation results are shown in Table 4 below.
(4) 내열성 평가(4) heat resistance evaluation
상기 (1)에서 코팅막을 형성한 후 열적인 충격에 의한 두께 변화를 하기 수학식 1로 확인하였다. 구체적으로, 최종 완성된 코팅막에 1시간 동안 230℃의 열을 가했을 때, 열을 가하기 전/후의 두께를 측정하여 하기 수학식 1로 변화율을 계산하였다. 이 때, 두께 변화율이 90% 이상이면 양호(○), 90% 미만인 경우 불량(×)이며, 그 평가 결과는 하기 표 4에 기재하였다.After forming the coating film in (1), the thickness change due to thermal shock was confirmed by the following equation (1). Specifically, when heat is applied at 230 ° C. for 1 hour to the final finished coating film, the change rate was calculated by the following equation 1 by measuring the thickness before / after applying heat. At this time, when the rate of change of thickness was 90% or more, it was good (○) and bad (×) when less than 90%, and the evaluation results are shown in Table 4 below.
[수학식 1][Equation 1]
도막 수축율 = {(열처리 후 막 두께) / (열처리 전 막 두께)} × 100 (%).Coating shrinkage ratio = {(film thickness after heat treatment) / (film thickness before heat treatment)} × 100 (%).
(5) 도막 경도(5) coating film hardness
상기 (1)에서 제조된 코팅막의 경화도를 경도계(HM500; Fischer사 제품)를 사용하여 150℃ 고온에서 측정하였으며, 표면경도는 하기 기준으로 평가하였다. 그 결과는 하기 표 2에 나타내었다. Curing degree of the coating film prepared in (1) was measured at a high temperature of 150 ℃ using a hardness tester (HM500; manufactured by Fischer), the surface hardness was evaluated based on the following criteria. The results are shown in Table 2 below.
<평가 기준><Evaluation Criteria>
○: 표면경도 50 이상○: surface hardness of 50 or more
△: 표면경도 30 내지 50 미만(Triangle | delta): Surface hardness less than 30-50
×: 표면경도 30 미만 X: surface hardness less than 30
(6) (6) 색재현성Color reproducibility
상기 (1)에서 제조된 코팅막을 Blue 광원(XLamp XR-E LED, Royal blue 450, Cree 社)상부에 위치 시키고, 그 위에 Red, Green, Blue가 pattern된 Color filter 기판(UN65, 삼성전자 TV Color filter 사용)을 위치 한 후 색도 측정기(OSP-200, Olympus 社)를 이용하여, Red, Green, Blue의 색좌표를 측정하여, 이때 표현되는 색재현 영역을 NTSC 색영역 대비 면적비를 계산하였으며, 그 평가 결과는 하기 표 4에 기재 하였다.Place the coating film prepared in (1) above the blue light source (XLamp XR-E LED, Royal blue 450, Cree Co., Ltd.), and the red, green, blue patterned color filter substrate (UN65, Samsung TV Color After using the filter, the color coordinates of red, green, and blue were measured by using a colorimeter (OSP-200, Olympus, Inc.). The results are shown in Table 4 below.
(NTSC대비%)Color reproducibility
(% Of NTSC)
막수축율(%)Heat resistance
Membrane shrinkage (%)
(N/㎟)High temperature film hardness
(N / mm2)
상기 표 4를 참조하면, 본 발명에 따른 카도계 바인더 수지와 에폭시 함유 아크릴계 바인더 수지를 포함하는 실시예의 경우, 도막경도 및 내열성이 비교예보다 매우 뛰어난 성능이 관찰되었으며, 이러한 결과로부터 디스플레이 제작 시 도입되는 열처리 공정에서 발생되는 증착막의 깨짐 불량을 대폭 저감시킬 수 있는 것을 알 수 있다.Referring to Table 4, in the case of the embodiment including the cardo-based binder resin and the epoxy-containing acrylic binder resin according to the present invention, the coating film hardness and heat resistance was much better than the comparative example was observed, from these results introduced in the display fabrication It can be seen that the cracking failure of the deposited film generated in the heat treatment step can be greatly reduced.
또한, 본 발명에 따른 실시예의 양자점의 발광중심파장 차이가 50nm 이상이며, 녹색발광파장이 510nm ~ 540nm, 적색발광중심파장이 610nm ~ 630nm인 것이 특징인 2 이상의 양자점을 적용한 경우 색재현성의 매우 우수함을 확인할 수 있었으나, 1종의 양자점을 사용한 경우 및 발광중심차이가 50nm 미만의 양자점을 적용할 경우 색재현성의 성능부족으로 컬러필터의 광원으로 적용하기 어려움을 확인할 수 있다.뿐만 아니라, 도막의 강도가 강화됨에 따라 휘도와 광유지율이 비교예 대비하여 월등히 우수한 것을 확인할 수 있다.In addition, the difference in the emission center wavelength of the quantum dot of the embodiment according to the present invention is 50nm or more, when the two or more quantum dots characterized by the green emission wavelength of 510nm ~ 540nm, red emission center wavelength of 610nm ~ 630nm is very excellent color reproducibility However, when one type of quantum dot is used and when the emission center difference is less than 50 nm, it is difficult to apply it as a light source of the color filter due to the lack of performance of color reproducibility. As it is enhanced, it can be seen that the luminance and the light retention rate are significantly superior to the comparative example.
Claims (16)
바인더 수지;를 포함하고,
상기 바인더 수지는 카도계 바인더 수지 및 에폭시 함유 아크릴계 바인더 수지를 포함하며,
상기 양자점은 표면에 배치되는 폴리에틸렌 글리콜계 리간드를 포함하고,
상기 폴리에틸렌 글리콜계 리간드는 하기의 화학식 1-A로 표시되는 화합물을 포함하는 것을 특징으로 하는 광변환 수지 조성물:
[화학식 1-A]
(상기 화학식 1-A에서,
R'는 화학식 1-1로 표시되고,
[화학식 1-1]
상기 화학식 1-1에서,
R1은 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이고,
R2는 화학식 1-2으로 표시되며,
[화학식 1-2]
상기 화학식 1-2에서,
A는 산소원자 또는 황원자이고,
R3는 직접연결기 또는 탄소수 1 내지 10의 알킬렌기이며,
B는 머캅토(), 카르복실산(), 디티오아세트산(), 인산() 또는 아민(-NH2)이고,
R"는 수소원자, 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄 알킬기 또는 탄소수 3 내지 20의 분지쇄 알킬기이고,
k는 1 내지 100의 정수이며,
l은 0 내지 1의 정수이고,
m은 0 내지 10의 정수이다).Two or more kinds of quantum dots whose emission center wavelengths differ by 50 nm or more from each other; And
Including a binder resin,
The binder resin includes a cardo-based binder resin and an epoxy-containing acrylic binder resin,
The quantum dot comprises a polyethylene glycol-based ligand disposed on the surface,
The polyethylene glycol-based ligand is a photo-conversion resin composition, characterized in that it comprises a compound represented by the formula 1-A:
[Formula 1-A]
(In Chemical Formula 1-A,
R 'is represented by the formula 1-1,
[Formula 1-1]
In Chemical Formula 1-1,
R1 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
R2 is represented by the formula 1-2,
[Formula 1-2]
In Chemical Formula 1-2,
A is an oxygen atom or a sulfur atom,
R3 is a direct linker or an alkylene group having 1 to 10 carbon atoms,
B is mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ) Or amine (-NH 2 ),
R "is a hydrogen atom, mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a straight chain alkyl group having 1 to 20 carbon atoms or a branched chain alkyl group having 3 to 20 carbon atoms,
k is an integer from 1 to 100,
l is an integer from 0 to 1,
m is an integer from 0 to 10).
상기 화학식 1-A로 표시되는 화합물은 하기 화학식 1-3으로 표시되는 것을 특징으로 하는 광변환 수지 조성물:
[화학식 1-3]
(상기 화학식 1-3에서,
R"는 머캅토( ), 카르복실산(), 디티오아세트산( ), 인산( ), 아민(-NH2), 탄소수 1 내지 20의 직쇄의 알킬기 또는 탄소수 3 내지 20의 분지쇄의 알킬기이고,
o는 0 내지 5의 정수이며,
p는 0 내지 1의 정수이고,
q는 1 내지 50의 정수이다).The method of claim 1,
The compound represented by Formula 1-A is a photo-conversion resin composition, characterized in that represented by the following formula 1-3:
[Formula 1-3]
(In Chemical Formula 1-3,
R "stands for mercapto ( ), Carboxylic acid ( ), Dithioacetic acid ( ), Phosphoric acid ( ), An amine (-NH 2 ), a linear alkyl group having 1 to 20 carbon atoms or a branched alkyl group having 3 to 20 carbon atoms,
o is an integer from 0 to 5,
p is an integer from 0 to 1,
q is an integer from 1 to 50).
상기 양자점은 비카드뮴계 양자점인 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The quantum dot is a light conversion resin composition, characterized in that the non-cadmium-based quantum dot.
상기 양자점은
GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 이원소 화합물; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, 및 이들의 혼합물로 이루어진 군에서 선택되는 삼원소 화합물; 및 GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, 및 이들의 혼합물로 이루어진 군에서 선택되는 사원소 화합물로 이루어진 군에서 선택되는 1종 이상의 물질을 포함하는 코어; 및
ZnSe, ZnS 및 ZnTe로부터 선택되는 1종 이상의 물질을 포함하는 쉘;을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The quantum dot is
Binary elements selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; Three-element compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; And one element selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. A core comprising the above materials; And
A light conversion resin composition comprising a; shell comprising at least one material selected from ZnSe, ZnS and ZnTe.
상기 양자점은 발광 중심파장이 서로 70nm 이상 차이가 나는 2종 이상의 양자점을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The quantum dot is a light conversion resin composition, characterized in that it comprises two or more kinds of quantum dots, the emission center wavelength is different from each other by more than 70nm.
상기 양자점은 발광중심파장 범위가 510nm 내지 540nm를 갖는 녹색 양자점 및 발광중심파장 범위가 610nm 내지 630nm인 적색 양자점으로 이루어진 군에서 선택되는 2종 이상을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 5,
The quantum dot is a light conversion resin composition, characterized in that it comprises two or more selected from the group consisting of a green quantum dot having a light emitting center wavelength range of 510nm to 540nm and a red quantum dot of a light emitting center wavelength range of 610nm to 630nm.
상기 폴리에틸렌 글리콜계 리간드는 2-(2-메톡시에톡시)아세트산, 2-[2-(2-메톡시에톡시)에톡시]아세트산, 숙신산 모노-[2-(2-메톡시-에톡시)-에틸]에스테르, 말론산 모노-[2-(2-메톡시-에톡시)-에틸]에스테르, 펜탄디온산 모노-{2-[2-(2-에톡시-에톡시)-에톡시]-에틸}에스테르, {2-[2-(2-에틸-헥실옥시)-에톡시]-에톡시}-아세트산, 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-에톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르, 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르, 말론산 모노-[2-(2-{2-[2-(2-{2-[2-(2-이소부톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르, 헥산디온산 모노-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르, 2-옥소-헥산디온산 6-(2-{2-[2-(2-에톡시-에톡시)-에톡시]-에톡시}-에틸)에스테르, 숙신산 모노-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-{2-[2-(2-메톡시-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에톡시]-에톡시}-에톡시)-에틸]에스테르, (2-부톡시-에톡시)-아세트산, 카복시-EG6-운데칸티올 및 (2-카복시메톡시-에톡시)-아세트산으로 이루어진 군에서 선택되는 1 이상을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The polyethylene glycol ligand is 2- (2-methoxyethoxy) acetic acid, 2- [2- (2-methoxyethoxy) ethoxy] acetic acid, succinic acid mono- [2- (2-methoxy-ethoxy ) -Ethyl] ester, malonic acid mono- [2- (2-methoxy-ethoxy) -ethyl] ester, pentanedionate mono- {2- [2- (2-ethoxy-ethoxy) -ethoxy ] -Ethyl} ester, {2- [2- (2-ethyl-hexyloxy) -ethoxy] -ethoxy} -acetic acid, succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2-Ethoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester, succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -e Methoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester, malonic acid mono- [2- (2- {2- [2- (2- {2- [ 2- (2-Isobutoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester, hexanediionic acid mono- [2- (2 -{2- [2- (2-methoxy-ethoxy) -ethoxy] -ethoxy} -e ) -Ethyl] ester, 2-oxo-hexanedionic acid 6- (2- {2- [2- (2-ethoxy-ethoxy) -ethoxy] -ethoxy} -ethyl) ester, succinic acid mono- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2- {2- [2- (2 -Methoxy-ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethoxy] -ethoxy } -Ethoxy) -ethoxy] -ethoxy} -ethoxy) -ethyl] ester, (2-butoxy-ethoxy) -acetic acid, carboxy-EG6-undecanethiol and (2-carboxymethoxy-e Methoxy) -acetic acid photo conversion resin composition comprising one or more selected from the group consisting of.
상기 에폭시 함유 아크릴계 바인더 수지는 하기 화학식 2 내지 화학식 4 중 적어도 하나의 반복단위를 포함하는 것을 특징으로 하는 광변환 수지 조성물:
[화학식 2]
[화학식 3]
[화학식 4]
(상기 화학식 2 내지 4에서,
R4, R5 및 R6은 각각 독립적으로 수소 또는 메틸기이다).The method of claim 1,
The epoxy-containing acrylic binder resin is a photo-conversion resin composition characterized in that it comprises at least one repeating unit of the formula (2) to (4):
[Formula 2]
[Formula 3]
[Formula 4]
(In Chemical Formulas 2 to 4,
R 4, R 5 and R 6 are each independently hydrogen or a methyl group).
상기 카도계 바인더 수지는 하기 화학식 5 내지 화학식 10 중 적어도 하나의 반복 단위를 포함하는 것을 특징으로 하는 광변환 수지 조성물:
[화학식 5]
[화학식 6]
[화학식 7]
[화학식 8]
(상기 화학식 5 내지 8에서,
X 및 X'은 각각 독립적으로 단일 결합, -CO-, -SO2-, -C(CF3)2-, -Si(CH3)2-, -CH2-, -C(CH3)2-, -O-,,,,, ,,,,,,, 또는 이고,
Y는 산무수물 잔기이며,
Z는 산2무수물 잔기이고,
R'''는 수소 원자, 에틸기, 페닐기, -C2H4Cl, -C2H4OH 또는 -CH2CH=CH2이며,
R7, R7', R8, R8', R9, R9', R10, R10', R11, R11', R12 및 R12' 은 각각 독립적으로 수소 원자 또는 메틸기이고,
R13, R13', R14 및 R14'는 각각 독립적으로 탄소수 1 내지 6의 직쇄의 알킬렌기 또는 탄소수 3 내지 6의 분지쇄의 알킬렌기이고, 상기 알킬렌기는 에스테르 결합, 탄소수 6 내지 14의 싸이클로알킬렌기 및 탄소수 6 내지 14의 아릴렌기 중 적어도 하나로 중단될 수 있으며,
R15, R15', R16, R16', R17, R17', R18 및 R18'는 각각 독립적으로 수소 원자, 할로겐 원자 또는 탄소수 1 내지 6의 직쇄의 알킬기 또는 탄소수 3 내지 6의 분지쇄의 알킬기이고,
r 및 s는 각각 0 ≤ m ≤ 30, 0 ≤ n ≤ 30을 만족하는 정수이며,
단 r 및 s는 동시에 0은 아니다.)
[화학식 9]
[화학식 10]
(상기 화학식 9 및 10에서,
P는 각각 독립적으로 , , , 또는 이고,
R19 및 R20는 각각 독립적으로 수소, 히드록시기, 티올기, 아미노기, 니트로기 또는 할로겐 원자이며,
Ar1은 각각 독립적으로 C6 내지 C15 아릴기이고,
Y'는 산무수물 잔기이며,
Z'는 산2무수물 잔기이고,
A'는 O, S, N, Si 또는 Se이며,
a 및 b는 각각 독립적으로 1 내지 6의 정수이고,
c 및 d은 각각 독립적으로 0 내지 30의 정수이며,
단, c 및 d는 동시에 0이 아니다.)The method of claim 1,
The cardo-based binder resin is a photo-conversion resin composition comprising at least one repeating unit of Formula 5 to Formula 10:
[Formula 5]
[Formula 6]
[Formula 7]
[Formula 8]
(In Chemical Formulas 5 to 8,
X and X 'are each independently a single bond, -CO-, -SO 2- , -C (CF 3 ) 2- , -Si (CH 3 ) 2- , -CH 2- , -C (CH 3 ) 2 -, -O-, , , , , , , , , , , , or ego,
Y is an acid anhydride residue,
Z is an acid 2 anhydride residue,
R '''is a hydrogen atom, an ethyl group, a phenyl group, -C 2 H 4 Cl, -C 2 H 4 OH or -CH 2 CH = CH 2 ,
R7, R7 ', R8, R8', R9, R9 ', R10, R10', R11, R11 ', R12 and R12' are each independently a hydrogen atom or a methyl group,
R13, R13 ', R14 and R14' are each independently a linear alkylene group having 1 to 6 carbon atoms or a branched alkylene group having 3 to 6 carbon atoms, and the alkylene group is an ester bond and a cycloalkylene group having 6 to 14 carbon atoms. And it may be stopped by at least one of arylene groups having 6 to 14 carbon atoms,
R15, R15 ', R16, R16', R17, R17 ', R18 and R18' are each independently a hydrogen atom, a halogen atom or a linear alkyl group having 1 to 6 carbon atoms or a branched alkyl group having 3 to 6 carbon atoms,
r and s are integers satisfying 0 ≦ m ≦ 30 and 0 ≦ n ≦ 30, respectively.
R and s are not zero at the same time.)
[Formula 9]
[Formula 10]
(In Chemical Formulas 9 and 10,
P is each independently , , , or ego,
R19 and R20 are each independently hydrogen, hydroxy group, thiol group, amino group, nitro group or halogen atom,
Ar1 is each independently a C6 to C15 aryl group,
Y 'is an acid anhydride residue,
Z 'is an acid 2 anhydride residue,
A 'is O, S, N, Si or Se,
a and b are each independently an integer of 1 to 6,
c and d are each independently an integer of 0 to 30,
Provided that c and d are not zero at the same time.)
상기 카도계 바인더 수지 대 상기 에폭시 함유 아크릴계 바인더 수지의 중량비는 10:90 내지 90:10인 것을 특징으로 하는 광변환 수지 조성물. The method of claim 1,
The weight ratio of the cardo-based binder resin to the epoxy-containing acrylic binder resin is 10:90 to 90:10, the light conversion resin composition.
상기 양자점은 InP/ZnS, InP/ZnSe, InP/GaP/ZnS, InP/ZnSe/ZnS, InP/ZnSeTe/ZnS 및 InP/MnSe/ZnS로 이루어진 군에서 선택되는 1종 이상을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The quantum dot is characterized in that it comprises one or more selected from the group consisting of InP / ZnS, InP / ZnSe, InP / GaP / ZnS, InP / ZnSe / ZnS, InP / ZnSeTe / ZnS and InP / MnSe / ZnS Light conversion resin composition.
상기 광변환 수지 조성물은 산란입자, 열경화성 화합물, 경화촉진제, 첨가제 및 용제로 이루어진 군에서 선택되는 1 이상을 더 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 1,
The light conversion resin composition further comprises at least one selected from the group consisting of scattering particles, a thermosetting compound, a curing accelerator, an additive and a solvent.
상기 산란입자는 Al2O3, SiO2, ZnO, ZrO2, BaTiO3, TiO2, Ta2O5, Ti3O5, ITO, IZO, ATO, ZnO-Al, Nb2O3, SnO, MgO 및 이들의 조합으로 이루어진 군에서 선택되는 1 이상을 포함하는 것을 특징으로 하는 광변환 수지 조성물.The method of claim 12,
The scattering particles are Al 2 O 3 , SiO 2 , ZnO, ZrO 2 , BaTiO 3 , TiO 2 , Ta 2 O 5 , Ti 3 O 5 , ITO, IZO, ATO, ZnO-Al, Nb 2 O 3 , SnO, A photoconversion resin composition comprising at least one selected from the group consisting of MgO and combinations thereof.
상기 광변환 적층 기재의 소재가 유리인, 광변환 적층기재. The method of claim 14,
The light conversion laminated base material whose material of the said light conversion laminated base material is glass.
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