KR20190108484A - Heat-resistant pressure-sensitive adhesive tape for production of semiconductor device - Google Patents

Abstract

The present invention relates to a heat resistant pressure-sensitive adhesive sheet for semiconductor device production. The heat resistant pressure-sensitive adhesive sheet for semiconductor device production comprises: a substrate layer; a first adhesive layer formed on one side of the substrate layer; and a second adhesive layer formed on the other side of the substrate layer. The adhesive sheet adheres to an adherend, heated at 150°C for 4 hours, and then peeled off. The amount of silicon transition transferred from the first adhesive layer to the interface of the adherend is not more than 0.01 g/m^2. The heat resistant pressure-sensitive adhesive sheet of the present invention is used for temporarily fixing a chip in leadless packaging of a semiconductor device.

Description

Heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing {HEAT-RESISTANT PRESSURE-SENSITIVE ADHESIVE TAPE FOR PRODUCTION OF SEMICONDUCTOR DEVICE}

The present invention relates to a method for manufacturing a semiconductor device using the heat resistant pressure sensitive adhesive sheet for semiconductor device manufacture and the heat resistant pressure sensitive adhesive sheet for semiconductor device manufacture.

Recently, leadless packaging (eg, Quad Flat No-lead Package (QFN) and Leadless Chip Carriers (LCC)) has become smaller and more integrated in the assembly technology of large scale integrated circuits. Is one of the most popular types of semiconductor device packaging.

In recent leadless packaging, the interface of one side with electrodes in a plurality of semiconductor devices is uniformly laminated to a heat-resistant pressure-sensitive adhesive sheet, sealed with a sealing resin in a cavity of a mold, and then heated and cured, and the resin is BACKGROUND OF THE INVENTION A manufacturing method for improving productivity by cutting to size and removing an adhesive sheet to obtain a single semiconductor device has been in the spotlight.

In the manufacturing method for sealing the plurality of semiconductor elements together, it is very difficult to prevent the resin from penetrating into the electrode side of the semiconductor element at the time of resin sealing, so that the problem that the semiconductor element electrode is covered with the resin tends to occur.

In addition, as the heat-resistant pressure-sensitive adhesive sheet, not only the penetration of the sealing resin should be prevented, but also the adhesive should not remain in the semiconductor element after peeling off the adhesive sheet, and when the resin is cured, it must endure high heat. A heat resistant adhesive sheet (Patent Document 1) has been developed as an adhesive sheet that satisfies the above requirements. The heat resistant adhesive tape for semiconductor device manufacturing according to Patent Document 1 uses acrylic acid adhesives to prevent the penetration of a sealing resin and the problem of adhesive remaining on the chip. Solve.

CN101186792A

However, the heat-resistant adhesive tape for manufacturing a semiconductor device according to Patent Document 1, when used in a process requiring high temperature heating for a long time, bubbles are generated to contaminate the chip electrode and cause a situation where the adhesive remains in the adherend.

The organosilicon-based adhesive has good heat resistance and weather resistance, but during the manufacturing process, the silicone oil is hard to be completely colloidized, and there are many residual silicone oil components, and the non-colloidal silicone oil is not firmly adhered to the colloid. Since it is easily transitioned to a "silicon transition", the semiconductor device electrode is contaminated in the semiconductor device production process, resulting in problems such as a decrease in reliability.

It is an object of the present invention to provide a good heat resistance, after being applied to an adherend and still undergoing a step of heating at a temperature of 150 ° C. for 4 hours, it is still not melt-deformed and adhesive strength is not significantly increased. It is to provide a heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing can be prevented and the amount of silicon transition transferred from the adhesive layer to the adherend interface after peeling can also prevent the penetration of the resin and no adhesive remains in the semiconductor device after peeling. .

Another object of the present invention is to provide a method for manufacturing a semiconductor device comprising the step of using the heat-resistant pressure-sensitive adhesive sheet of the present invention in the production of a semiconductor device.

In order to solve the above problems, the inventors of the present invention have studied the physical properties, materials, thicknesses, and the like of the heat-resistant pressure-sensitive adhesive sheet for a long time, and have excellent heat resistance by controlling the amount of silicon transition transferred from the first adhesive layer to the adherend interface. The present invention has been completed by discovering that even after a long heating step, a satisfactory adhesive strength can still be obtained and a heat-resistant pressure-sensitive adhesive sheet can be provided that is easy to peel off after use and does not cause contamination due to adhesive residue on the adherend. I was.

That is, this invention, a base material layer; A first adhesive layer formed on one side of the base layer; And a second adhesive layer formed on the other side of the substrate layer, and adhered to the adherend, heated at 150 ° C. for 4 hours, and then peeled off. The amount of silicon transition transferred from the first adhesive layer to the interface of the adherend is Provided is a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device having ≤ 0.01 g / m ² .

In one embodiment, the first adhesive layer and the second adhesive layer comprise an organosilicon adhesive.

In one embodiment, the 180 ° peel adhesion at the first adhesive layer at 20-25 ° C. is 0.1-2 N / 20 mm.

In one embodiment, the 180 ° peel adhesion after the first adhesive layer is heated at 150 ° C. for 4 hours is 0.2-3 N / 20 mm.

In one embodiment, the storage modulus of the first adhesive layer at 20-25 ° C. is 0.6 × 10 ⁵ to 1.7 × 10 ⁵ Pa.

In one embodiment, the storage elastic modulus of the first adhesive layer at 150 ° C. is 0.5 × 10 ⁵ to 0.8 × 10 ⁵ Pa.

In one embodiment, the gel fraction of the adhesive of the first adhesive layer is 50-70% and the weight average molecular weight of the soluble portion is 2,000-5,000.

In one embodiment, the 15 ° peel adhesion at 20-25 ° C. of the second adhesive layer is 2-100 N / 20 mm.

In one embodiment, the 15 ° peel adhesion after the second adhesive layer is heated at 150 ° C. for 4 hours is 3 to 130 N / 20 mm.

In one embodiment, the storage elastic modulus of the 2nd adhesive bond layer in 20-25 degreeC is 0.8 * 10 <^5> -2.5 * 10 <^5> Pa.

In one embodiment, the storage elastic modulus of the second adhesive layer at 150 ° C. is 0.5 × 10 ⁵ to 1.6 × 10 ⁵ Pa.

In one embodiment, the gel fraction of the adhesive of the second adhesive layer is 40-90% and the weight average molecular weight of the soluble portion is 2,000-6,000.

In one embodiment, the substrate layer is a polyester film, polyamide film, polyimide film, polyphenylene sulfide film, polyetherimide film, polyamideimide film, polysulfone film, polyetherketone (PEK) film, poly Tetrafluoroethylene (PTFE) film, ethylene tetrafluoroethylene (ETFE) film, fluorinated ethylene propylene (FEP) film, polyvinylidene difluoride (PVDF) film, polychlorotrifluoroethylene (PCTFE) film Or an alternating copolymer film having a molar ratio of ethylene and chlorotrifluoroethylene of 1: 1.

In one embodiment, the heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing further includes a first release film and a second release film, the first release film is provided on one side opposite to the substrate layer in the first adhesive layer, the second The release film is provided on one side opposite to the base layer in the second adhesive layer.

In one embodiment, the thickness of a 1st adhesive bond layer or a 2nd adhesive bond layer is 5-50 micrometers.

In addition, the present invention also relates to a method for manufacturing a semiconductor device, the method of manufacturing a semiconductor device includes the step of using a heat-resistant pressure-sensitive adhesive sheet for manufacturing the semiconductor device.

According to the present invention, a satisfactory adhesive strength can still be obtained even after a long heating step, peeling is easy even after a long heating step at a high temperature, and contamination due to adhesive residue on the adherend interface does not occur. A pressure-sensitive adhesive sheet having excellent heat resistance that significantly improves yield and reliability can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram of the heat resistant pressure sensitive adhesive sheet for semiconductor device manufacture which concerns on embodiment of this invention.
2 is a schematic cross-sectional view of a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device according to another embodiment of the present invention.
It is a figure which shows the external appearance evaluation of the contact surface between the 1st adhesive bond layer and the chip electrode of the heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture of Example 1. FIG.
It is a figure which shows the external appearance evaluation of the contact surface between the 1st adhesive bond layer and the chip electrode of the heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture of Example 4. FIG.
It is a figure which shows the external appearance evaluation of the contact surface between the 1st adhesive bond layer and the chip electrode of the heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture of Comparative Example 1. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, although embodiment of this invention is described in detail, this invention is not limited to the following embodiment.

<< heat-resistant pressure-sensitive adhesive sheet for semiconductor element manufacture >>

BRIEF DESCRIPTION OF THE DRAWINGS It is a cross-sectional schematic diagram of the heat resistant pressure sensitive adhesive sheet for semiconductor device manufacture which concerns on embodiment of this invention. As shown in FIG. 1, the heat resistant pressure-sensitive adhesive sheet 1 for manufacturing a semiconductor device includes a base layer 10; A first adhesive layer 20 formed on one side of the base layer 10; And a second adhesive layer 30 formed on the other side of the base layer 10. In the semiconductor device production process, the first adhesive layer 20 is for bonding the electrode side of the semiconductor device, and the second adhesive layer 30 is for bonding the substrate.

2 is a schematic cross-sectional view of a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device according to another embodiment of the present invention. As shown in FIG. 2, the heat-resistant pressure-sensitive adhesive sheet 1 for manufacturing a semiconductor device includes a base layer 10; A first adhesive layer 20 formed on one side of the base layer 10; A first release film 40 formed on the first adhesive layer 20; A second adhesive layer 30 formed on the other side of the base layer 10; And a second release film 50 formed on the second adhesive layer 30.

The concept of an adhesive sheet referred to herein may include an object called an adhesive tape, an adhesive label, an adhesive film, or the like. It should be explained that the adhesive sheets disclosed herein may be in the form of a single sheet or may be adhesive sheets further processed into various shapes.

<Base layer>

Although the kind of base material is not specifically limited, Preferably, the base material layer which has heat resistance in the heating conditions at the time of sealing with resin is used, and the resin sealing step requires the temperature of about 150-180 degreeC generally. Therefore, it is preferable to use the heat resistant material which satisfy | fills the said heating conditions for the base material layer of the heat resistant pressure-sensitive adhesive sheet of this invention.

Embodiments of the substrate layer include a heat resistant plastic film. As such a heat resistant plastic film, it is a polyester film, a polyamide film, a polyimide film, a polyphenylene sulfide film, a polyetherimide film, a polyamideimide film, a polysulfone film, a polyether ketone (PEK) film, poly Tetrafluoroethylene (PTFE) film, ethylene tetrafluoroethylene (ETFE) film, fluorinated ethylene propylene (FEP) film, polyvinylidene difluoride (PVDF) film, polychlorotrifluoroethylene (PCTFE) film And alternating copolymer films having a molar ratio of ethylene and chlorotrifluoroethylene of 1: 1 are preferred. These materials may be used alone or in combination of two or more.

Paper substrates such as cellophane paper, high quality paper and Japanese paper may also be used as the heat resistant substrate layer; Nonwoven substrates such as cellulose, polyamides, polyesters and aromatic polyamides may be used; Metal foil bases such as aluminum foil, SUS foil and Ni foil can be used. In addition, a stackable material may also be used as the base layer.

The thickness of the base material layer is not particularly limited and can be set to an appropriate thickness according to the use of the adhesive sheet or the like. Preferably the thickness of a base material layer is 10-200 micrometers, More preferably, it is 25-100 micrometers. When the thickness of the base layer is within the above range can be prevented from bending and tearing the heat-resistant pressure-sensitive adhesive sheet, if the thickness of the base layer is less than 10 ㎛, it is easily broken or cracked when peeling, the thickness of the base layer 200 If it is larger than m, a cost increase is caused.

In order to improve the adhesion of the heat-resistant pressure-sensitive adhesive sheet of the present invention, a known or general interface treatment such as chemical or physical oxidation treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage impact exposure, or ionizing radiation treatment is applied to the interface of the substrate layer. It can be performed as appropriate. In addition, the coating layer treatment may be performed on the interface of the substrate layer with an anchor coating layer such as a primer or an isocyanate anchor.

<Adhesive layer>

In the heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention, the first adhesive layer on the semiconductor element electrode side is preferably made to be an organosilicon adhesive layer. The second adhesive layer located on the other side of the substrate layer may be an organosilicon adhesive layer or another heat resistant adhesive layer.

(First adhesive layer)

The first adhesive layer of the heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention is adhered to the adherend, heated at 150 ° C. for 4 hours, and then peeled off, and the amount of silicon transition transferred from the first adhesive layer to the interface of the adherend is ≦ 0.01. g / m ² , preferably ≦ 0.008 g / m ² , and more preferably ≦ 0.006 g / m ² . When the amount of silicon transition is included in the above range, peeling is easy even after using it for a long time, and contamination of the adherend does not occur due to silicon. When the silicon transition amount is larger than the above value, the semiconductor element electrode is contaminated, the reliability of the semiconductor element after packaging is deteriorated, the appearance of the electrode side is poor, and peeling after use is difficult.

The adherend is not particularly limited. Stainless steel (eg, SUS: 304, 430, etc.), gold, silver, platinum, gold-tin alloys, titanium-aluminum alloys, and the like.

Although the 1st adhesive bond layer of this invention is not specifically limited as long as it has adhesiveness and heat resistance, It is preferable that it is an organosilicon adhesive layer formed from the adhesive composition containing an organosilicon adhesive.

Arbitrary appropriate adhesive agents can be used as an organosilicon adhesive agent which comprises an organosilicon adhesive layer in the range which can acquire the effect of this invention. As the organosilicon adhesive, it is preferable to use, for example, an organosilicon adhesive comprising an organosilicon rubber or an organosilicon resin containing an organopolysiloxane as a base polymer. As a base polymer which comprises an organosilicon adhesive, the base polymer obtained by bridge | crosslinking the said organic silicone rubber or organic silicone resin can also be used. It should be explained that, in the present specification, the difference between "organic silicone rubber" and "organic silicone resin" is that the "Information Technology Association Adhesive (Film Tape) Material Design and Functionality 1st Edition September 30, 2009 222 ~ 228 p. " In other words, "organic silicone rubber" refers to an organic silicone having a straight chain structure composed of diorganosiloxane (D unit), and "organic silicone resin" refers to a side chain containing triorganosiloxane (M unit) and silicate (Q unit). It means an organic silicon having a structure.

The organic silicone rubber may be, for example, an organopolysiloxane including dimethylsiloxane as a structural unit. In organopolysiloxane, a functional group (for example, a vinyl group) can be introduce | transduced as needed.

As the organosilicon resin, for example, an organopolysiloxane including at least one structural unit selected from R ₃ SiO _1/2 structural units, SiO ₂ structural units, RSiO _3/2 structural units, and R ₂ SiO structural units ( R may be a monovalent alkyl group or a hydroxyl group).

The said organic silicone rubber and organic silicone resin can be used in combination. The weight ratio (rubber: resin) of the organic silicone rubber and the organic silicone resin in the organosilicon adhesive is preferably 30:70 to 20:80, more preferably 30:70 to 23:77. When the weight ratio of the organic silicone rubber and the organic silicone resin is included in the above range, excellent viscosity and retaining force can be obtained, and if the weight ratio of the organic silicone rubber and the organic silicone resin is not included in the above range, the viscosity becomes low and is easily dropped. The adhesion is so high that it is difficult or impossible to peel.

The organic silicone rubber and the organic silicone resin may be contained in the organosilicon-based adhesive in the form of a simple mixture or in the organosilicon-based adhesive in such a manner as to partially condense the organic silicone rubber and the organic silicone resin. It should be explained that the weight ratio of the organosilicon rubber and the organosilicon resin in the organosilicon adhesive is determined by the ²⁹ Si-NMR measurement, and the peak area ratio of the Q unit and the D unit (organic silicone rubber: organic silicone resin = D unit: Q unit). Can be obtained based on

The adhesive may contain any suitable additive as necessary. As the additive, for example, a catalyst, a crosslinking agent, a thickener, a plasticizer, a pigment, a dye, a filler, an anti-aging agent, a conductive material, an antistatic agent, an ultraviolet absorber, an optical stabilizer, a peeling control agent, a softener, a surfactant, a flame retardant, an antioxidant, and the like can be used. have.

Any suitable catalyst can be used as the catalyst. Specific examples of the catalyst may be, for example, a platinum catalyst or the like, and the catalyst may be a commercially available product or a processed product after processing the same. The addition amount of the catalyst is not particularly limited and may be set to any appropriate amount depending on the performance of the adhesive layer and the like. Can be. The total content of the organic silicone rubber and the organic silicone resin is 100 parts by weight, preferably 1 to 10 parts by weight, more preferably 2 to 5 parts by weight.

As the crosslinking agent, for example, it may be a siloxane crosslinking agent, a peroxide crosslinking agent, or the like, and as a peroxide crosslinking agent, for example, benzoyl peroxide, t-butyl peroxybenzoate, dicumylperoxide, or the like, and as a siloxane crosslinking agent, for example For example, it may be a polyorganohydrogensiloxane. The polyorganohydrogensiloxane preferably has two or more hydrogen atoms bonded to silicon atoms. In addition, the polyorganohydrogensiloxane preferably has an alkyl group, a phenyl group, a haloalkyl group as a functional group bonded to a silicon atom, and more preferably has a methyl group from the ease of synthesis and processing.

The amount of the crosslinking agent added is not particularly limited and may be set to any appropriate amount depending on the target adhesive force, the performance of the adhesive layer, and the like. The total content of 100 parts by weight of the organic silicone rubber and the organic silicone resin is preferably 1 to 10 parts by weight, more preferably 1.5 to 5 parts by weight.

As the thickener, any suitable thickener such as, for example, a tackifying resin can be used. As a specific example of tackifying resin, rosin type tackifying resin (for example, unmodified rosin, modified rosin, rosin phenol type resin, rosin ester type resin, etc.), terpene type tackifying resin (for example, terpene type resin) , Terpene phenolic resin, styrene-modified terpene-based resin, aromatic modified terpene-based resin, hydrogenated terpene-based resin, hydrocarbon-based tackifying resin (e.g., aliphatic hydrocarbon resin, aliphatic cyclic hydrocarbon resin, aromatic hydrocarbon resin ( For example, styrene resin, xylene resin, etc.), aliphatic / aromatic petroleum resin, aliphatic / alicyclic petroleum resin, hydrogenated hydrocarbon resin, coumarone resin, coumarone oxime resin, etc.), phenolic tackifying resin ( For example, alkyl group phenol type resin, xylene formaldehyde type resin, phenol type resol resin, phenol type varnish, etc.), ketone type tackifying resin, polyamide type Complex given resin, epoxy-based tackifying resins, and the like Elmer elastomer tackifiers. Thickeners may be used alone or in combination of two or more thereof.

Any suitable plasticizer may be used as the plasticizer, and specific examples of the plasticizer may include, for example, trimellitate plasticizer, pyromellitate plasticizer, polyester plasticizer, adipic acid plasticizer, and the like. The plasticizers may be used alone or in combination of two or more thereof.

In view of improving the resilience resistance of the heat-resistant pressure-sensitive adhesive sheet, the weight average molecular weight of the soluble portion of the adhesive of the first adhesive layer is preferably 2,000 to 5,000, more preferably 2,000 to 4,500, even more preferred It is 2,000 to 4,000. By setting the weight average molecular weight of the soluble part of an adhesive within the said range, an adhesive can be equipped with appropriate cohesive strength and the repulsion resistance of an adhesive tape can be improved. If the weight average molecular weight of the soluble portion of the adhesive is less than 2,000, the viscosity may be lowered because the adhesive force required for the adhesive may not be realized, and if the weight average molecular weight of the soluble portion of the adhesive is 5,000 or more, the adhesive force is too large, so that the peeling is difficult or the peeling is difficult. An impossible case occurs.

In the first adhesive layer, in view of the balance of adhesive properties (adhesiveness, viscosity, durability, retention properties), the gel fraction is preferably 50 to 70%, more preferably 55 to 70%, even more preferred Make it 60 to 70%. If the gel fraction is less than 50%, there is a possibility that the cohesive force is insufficient to cause cohesive failure during peeling, and some adhesives remain at the interface of the adherend, resulting in a decrease in workability. On the other hand, when the gel fraction is 70% or more, the viscosity may be insufficient and the adhesion demand may not be reached, so that the adhesion reliability may decrease.

The storage elastic modulus of the first adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 0.6 × 10 ⁵ to 1.7 × 10 ⁵ Pa, preferably 0.8 × 10 ⁵ to 1.7 × 10 ⁵ Pa. The heat resistant pressure-sensitive adhesive sheet of the first adhesive layer having the storage elastic modulus tends to exhibit good adhesion to the adherend. This is preferable from the viewpoint of adhesion workability (for example, work efficiency, adhesion accuracy) of the heat resistant pressure-sensitive adhesive sheet.

The storage elastic modulus of the first adhesive layer at 150 ° C. is 0.5 × 10 ⁵ to 0.8 × 10 ⁵ Pa, preferably 0.6 × 10 ⁵ to 0.8 × 10 ⁵ Pa. When the 1st adhesive bond layer has a storage elastic modulus within the said range, the heat resistant pressure-sensitive adhesive sheet excellent in adhesiveness and workability can be obtained.

The 180 ° peel adhesion at the first adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 0.1 to 2 N / 20 mm, preferably 0.1 to 1.5 N / 20 mm. When the 180 ° peel adhesive force at 20 to 25 ° C. (preferably 23 ° C.) is less than 0.1 N / 20 mm, the semiconductor device is not fixed and is easily detached or slipped from the adhesive sheet during the manufacturing process, and 20 to 25 ° C. ( Preferably, when the 180 ° peel adhesion at 23 ° C.) is greater than 2 N / 20 mm, peeling is difficult or impossible.

The 15 ° peel adhesion at the first adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 2 to 22 N / 20 mm, preferably 2 to 10 N / 20 mm. When the 15 ° peel adhesive force at 20 to 25 ° C. (preferably 23 ° C.) is included in the above range, the adhesion to the adherend is improved and can be easily peeled off after use.

The 180 ° peel adhesion after the first adhesive layer is heated at 150 ° C. for 4 hours is 0.2 to 3 N / 20 mm, preferably 0.2 to 2.5 N / 20 mm, more preferably 0.2 to 1 N /. 20 mm. When the 180 ° peel adhesion after heating at 150 ° C. for 4 hours is less than 0.2 N / 20 mm, the adhesion to the semiconductor element is insufficient, so that the semiconductor element is easily dropped and the position is offset or the package resin penetrates during operation. When the 180 ° peel adhesion after heating at 150 ° C. for 4 hours is more than 3 N / 20 mm, peeling is difficult, and the semiconductor device still remains in the first adhesive layer or the structure of the semiconductor device easily occurs.

The 15 ° peel adhesion after the first adhesive layer is heated at 150 ° C. for 4 hours is 3 to 35 N / 20 mm, preferably 3 to 25 N / 20 mm. When the 15 ° peeling adhesive force after heating at 150 ° C. for 4 hours is included in the above range, not only can exhibit proper adhesiveness, but also prevents a phenomenon that peeling after use is difficult.

In the peeling adhesive force, in the step of thermosetting the sealing resin to the package, the semiconductor element is temporarily fixed, and after the completion of the resin sealing step, the package must be peeled from the adhesive layer. this? If the peel adhesion is too low, the fixing of the semiconductor element is poor, it is easily removed or slipped from the adhesive sheet in the manufacturing process, if the adhesion is too high, peeling is difficult. Therefore, the peel adhesion of the first adhesive layer of the present invention should be included in the above range.

In the storage elastic modulus, in the step of thermosetting the sealing resin to the package, it is necessary to protect the semiconductor element electrode from being contaminated by the sealing resin. If the storage elastic modulus is too high, a gap is generated between the adhesive layer and the semiconductor element. If the elastic modulus is too low, an offset occurs in the semiconductor device. Therefore, the storage modulus of the first adhesive layer of the present invention should fall within the above range.

In addition, since the first adhesive layer has low thermal expansion, the offset of the semiconductor element position after sealing with the resin becomes small. The offset degree is 0.3 mm or less, Preferably it is 0.1 mm or less.

The thickness of the 1st adhesive bond layer of this invention can apply arbitrary appropriate thickness within the range which does not affect the effect of this invention. As such thickness, Preferably it is 5-50 micrometers, More preferably, it is 10-30 micrometers. If the thickness of the first adhesive layer is less than 5 μm, there is a fear of not achieving sufficient adhesiveness, and if the thickness of the first adhesive layer is more than 50 μm, not only the cost increases but also the adhesive force becomes too large to be deposited upon peeling off. There is a risk of rupture of the sieve.

(2nd adhesive bond layer)

As the material of the second adhesive layer, any suitable adhesive can be used within the range that does not affect the effects of the present invention, and the second adhesive layer can be produced by any suitable method using such adhesive.

As the adhesive constituting the second adhesive layer, for example, an organic silicon adhesive, an acrylic acid adhesive containing an acrylic acid polymer as a base polymer, a rubber adhesive containing natural rubber or a synthetic rubber as the base polymer, a styrene / conjugated diene block Copolymer-based adhesives, polyester-based adhesives, polyamide-based adhesives, and the like. Here, from a heat resistant viewpoint, it is preferable to use an organosilicon adhesive and an acrylic acid adhesive, and it is more preferable to use an organosilicon adhesive.

As the organosilicon adhesive, it is preferable to use, for example, an organosilicon adhesive containing an organopolysiloxane or an organosilicon resin as an organosilicon adhesive comprising as a base polymer. As a base polymer which comprises an organosilicon adhesive, the base polymer obtained by bridge | crosslinking the said organic silicone rubber or organic silicone resin can also be used.

The organic silicone rubber may be, for example, an organopolysiloxane including dimethylsiloxane as a structural unit. A functional group (for example, a vinyl group) can be introduce | transduced into organopolysiloxane as needed.

As the organosilicon resin, for example, an organopolysiloxane including at least one structural unit selected from R ₃ SiO _1/2 structural units, SiO ₂ structural units, RSiO _3/2 structural units, and R ₂ SiO structural units ( R may be a monovalent alkyl group or a hydroxyl group).

The said organic silicone rubber and organic silicone resin can be used in combination. The weight ratio (rubber: resin) of the organic silicone rubber and the organic silicone resin in the organosilicon adhesive is preferably 80:20 to 20:80, more preferably 80:20 to 50:50. When the weight ratio of the organic silicone rubber and the organic silicone resin is included in the above range, excellent viscosity and retaining force can be obtained, and if the weight ratio of the organic silicone rubber and the organic silicone resin is not included in the above range, the viscosity becomes low and is easily dropped. The adhesion is so high that it is difficult or impossible to peel.

The organic silicone rubber and the organic silicone resin may be contained in the organosilicon-based adhesive in the form of a simple mixture or in the organosilicon-based adhesive in such a manner as to partially condense the organic silicone rubber and the organic silicone resin. It should be explained that the weight ratio of the organosilicon rubber and the organosilicon resin in the organosilicon adhesive is determined by the ²⁹ Si-NMR measurement, and the peak area ratio of the Q unit and the D unit (organic silicone rubber: organic silicone resin = D unit: Q unit). Can be obtained based on

The adhesive may contain any suitable additive as necessary. As the additive, for example, a catalyst, a crosslinking agent, a thickener, a plasticizer, a pigment, a dye, a filler, an anti-aging agent, a conductive material, an antistatic agent, an ultraviolet absorber, an optical stabilizer, a peeling control agent, a softener, a surfactant, a flame retardant, an antioxidant, and the like can be used. have.

Any suitable catalyst can be used as the catalyst. Specific examples of the catalyst may be, for example, a platinum catalyst or the like, and the catalyst may be a commercially available product or a processed product after processing the same. The addition amount of the catalyst is not particularly limited and may be set to any appropriate amount depending on the performance of the adhesive layer and the like. Can be. The total content of the organic silicone rubber and the organic silicone resin is 100 parts by weight, preferably 1 to 10 parts by weight, more preferably 2 to 5 parts by weight.

As the crosslinking agent, for example, it may be a siloxane crosslinking agent, a peroxide crosslinking agent, or the like, and as a peroxide crosslinking agent, for example, benzoyl peroxide, t-butyl peroxybenzoate, dicumylperoxide, or the like, and as a siloxane crosslinking agent, for example For example, it may be a polyorganohydrogensiloxane. The polyorganohydrogensiloxane preferably has two or more hydrogen atoms bonded to silicon atoms. In addition, the polyorganohydrogensiloxane preferably has an alkyl group, a phenyl group, a haloalkyl group as a functional group bonded to a silicon atom, and more preferably has a methyl group from the ease of synthesis and processing.

The amount of the crosslinking agent added is not particularly limited and may be set to any appropriate amount depending on the target adhesive force, the performance of the adhesive layer, and the like. The total content of 100 parts by weight of the organic silicone rubber and the organic silicone resin is preferably 1 to 10 parts by weight, more preferably 1.5 to 5 parts by weight.

As the thickener, any suitable thickener such as, for example, a tackifying resin can be used. As a specific example of tackifying resin, rosin type tackifying resin (for example, unmodified rosin, modified rosin, rosin phenol type resin, rosin ester type resin, etc.), terpene type tackifying resin (for example, terpene type resin) , Terpene phenolic resin, styrene-modified terpene-based resin, aromatic modified terpene-based resin, hydrogenated terpene-based resin, hydrocarbon-based tackifying resin (e.g., aliphatic hydrocarbon resin, aliphatic cyclic hydrocarbon resin, aromatic hydrocarbon resin ( For example, styrene resin, xylene resin, etc.), aliphatic / aromatic petroleum resin, aliphatic / alicyclic petroleum resin, hydrogenated hydrocarbon resin, coumarone resin, coumarone oxime resin, etc.), phenolic tackifying resin ( For example, alkyl group phenol type resin, xylene formaldehyde type resin, phenol type resol resin, phenol type varnish, etc.), ketone type tackifying resin, polyamide type Complex given resin, epoxy-based tackifying resins, and the like Elmer elastomer tackifiers. Thickeners may be used alone or in combination of two or more thereof.

Any suitable plasticizer may be used as the plasticizer, and specific examples of the plasticizer may include, for example, trimellitate plasticizer, pyromellitate plasticizer, polyester plasticizer, adipic acid plasticizer, and the like. The plasticizers may be used alone or in combination of two or more thereof.

In view of improving the resilience resistance of the heat-resistant pressure-sensitive adhesive sheet, the weight average molecular weight of the soluble portion of the adhesive of the second adhesive layer is 2,000 to 6,000, preferably 2,000 to 5,000, and more preferably 3,000 to 5,000 to be. By setting the weight average molecular weight of the soluble part of an adhesive within the said range, an adhesive can be equipped with appropriate cohesive strength and the repulsion resistance of an adhesive tape can be improved. When the weight average molecular weight of the soluble portion of the adhesive is not included in the above range, the adhesive force required for the adhesive may not be realized or the adhesive force is too large, so that peeling may be difficult or impossible.

In the second adhesive layer, the gel fraction is preferably 40 to 90%, preferably 50 to 90%, even more preferably 60 to 90%. When the gel fraction is included in the above range, it can maintain a sufficient viscosity, can exhibit excellent peelability when peeling and can implement excellent workability without generating contamination due to adhesive residue on the adherend.

The storage modulus of the second adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 0.8 × 10 ⁵ to 2. 5 × 10 ⁵ Pa, preferably 1 × 10 ⁵ to 2. 5 × 10 ⁵ Pa to be. The heat resistant pressure-sensitive adhesive sheet of the second adhesive layer having the storage elastic modulus tends to exhibit good adhesion to the adherend. This is preferable from the viewpoint of adhesion workability (for example, work efficiency, adhesion accuracy) of the heat resistant pressure-sensitive adhesive sheet.

The storage elastic modulus of the second adhesive layer at 150 ° C. is 0.5 × 10 ⁵ to 1.6 × 10 ⁵ Pa, preferably 0.6 × 10 ⁵ to 1.6 × 10 ⁵ Pa. When the 2nd adhesive bond layer has a storage elastic modulus within the said range, the heat resistant pressure-sensitive adhesive sheet excellent in adhesiveness and workability can be obtained.

The 180 ° peel adhesion at the second adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 0.1 to 8 N / 20 mm, preferably 0.1 to 2 N / 20 mm. If the 180 ° peel adhesion at 20 to 25 ° C. (preferably 23 ° C.) is less than 0.1 N / 20 mm, the adhesion to the substrate is poor and easily detaches or slips off the substrate during the manufacturing process. When the 180 ° peel adhesive force at 20 to 25 ° C. (preferably 23 ° C.) is more than 8 N / 20 mm, peeling becomes difficult or peeling becomes impossible.

The 15 ° peel adhesion at the second adhesive layer at 20 to 25 ° C. (preferably 23 ° C.) is 2 to 100 N / 20 mm, preferably 2 to 50 N / 20 mm, more preferably 2 to 22 N / 20 mm. When the 15 ° peel adhesive force at 20 to 25 ° C. (preferably 23 ° C.) is included in the above range, the adhesion to the adherend is improved and can be easily peeled off after use.

The 180 ° peel adhesion after the second adhesive layer is heated at 150 ° C. for 4 hours is 0.2 to 10 N / 20 mm, and preferably 0.2 to 3 N / 20 mm. If the 180 ° peel adhesion after heating at 150 ° C. for 4 hours is less than 0.2 N / 20 mm, the adhesiveness becomes insufficient and is easily dropped during operation and the position is offset. When the 180 ° peel adhesion after heating at 150 ° C. for 4 hours is more than 10 N / 20 mm, peeling becomes difficult or peeling becomes impossible.

The 15 ° peel adhesion after the second adhesive layer is heated at 150 ° C. for 4 hours is 3 to 130 N / 20 mm, preferably 3 to 100 N / 20 mm, more preferably 3 to 41 N / 20 mm to be. When the 15 ° peeling adhesive force after heating at 150 ° C. for 4 hours is included in the above range, not only can exhibit proper adhesiveness, but also prevents a phenomenon that peeling after use is difficult.

The thickness of the second adhesive layer can be applied to any suitable thickness within a range that does not affect the effect of the present invention. As such thickness, Preferably it is 5-50 micrometers, More preferably, it is 10-30 micrometers. If the thickness of the second adhesive layer is less than 5 μm, there is a fear of not achieving sufficient adhesiveness. If the thickness of the second adhesive layer is more than 50 μm, not only the cost is increased but also the adhesive force is too large so that the adherend at the time of peeling There is a risk of rupture.

<Release film>

The heat resistant pressure sensitive adhesive sheet of this invention can further be equipped with a release film as needed. At least one side of the release film is formed of a release surface, it may be provided to protect the adhesive layer of the present invention. As shown in Figure 2, the heat-resistant pressure-sensitive adhesive sheet of the present invention includes a first release film and a second release film, the first release film is installed on one side opposite to the substrate layer in the first adhesive layer, The 2 release film is provided in one side opposite to a base material layer in a 2nd adhesive bond layer.

The release film comprises a single layer structure or a multilayer structure and is formed of a material commonly used in the art. For example, the release film is a sheet including a base film and a release agent layer formed on one side thereof, and is a sheet that is peeled off to expose each side of the adhesive layer before using the heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention. .

The release agent layer may be appropriately selected and obtained from general release agent layers including long chain alkyl machines, fluorine resins and silicone resins depending on the adhesive to be in contact therewith.

The base film of the release film may be formed of any suitable material. For example, polyether ether ketone film, polyetherimide film, polyaryl compound film, polyethylene naphthalate film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinylchloride film, poly Vinyl chloride copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinylacetate copolymer film, ionomer resin film, ethylene- (methyl group) acrylic acid copolymer film, ethylene- (methyl group) acrylic It may be selected from the rate copolymer film, polystyrene film and polycarbonate film.

The release agent layer is selected according to the resin of the adhesive layer, an appropriate release agent is selected from general release agents including a fluorinated organosilicon resin release agent, a fluorine resin release agent, an organosilicon resin release agent, a polyvinyl alcohol resin, a polypropylene resin, and a long-chain alkyl group compound. It may be a layer obtained by inclusion in the resin.

<< manufacturing method of heat-resistant pressure-sensitive adhesive sheet for semiconductor element manufacture >>

The heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention can be produced by any suitable method. A method for producing a heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention, comprising a method of directly applying a composition containing an adhesive to a substrate layer, or an application layer formed by applying a composition containing an adhesive to an appropriate matrix as a substrate layer. The method of transcription | transfer etc. are mentioned, for example. The composition comprising the adhesive may comprise any suitable solvent and may be dried by applying a thin layer of adhesive to a substrate or separator to produce such a heat resistant pressure sensitive adhesive sheet.

<< The manufacturing method of the semiconductor element using the heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture of this invention >>

In the manufacturing method of the semiconductor element of this invention, the 2nd adhesive bond layer of the heat-resistant pressure-sensitive-adhesive sheet of this invention is laminated | stacked on a board | substrate (for example, glass, stainless steel, or a ceramic), and the one side provided with the some semiconductor element electrode is provided. The interface is evenly laminated to the first adhesive layer of the heat-resistant pressure-sensitive adhesive sheet, sealed with the sealing resin in the cavity of the mold, and then heated at 80 to 200 ° C. for 2 to 6 hours to cut the resin after molding into a corresponding size. The heat resistant pressure-sensitive adhesive sheet of the invention is removed to obtain a single semiconductor device structure.

As an embodiment, a method of manufacturing a semiconductor device using a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device is as follows.

The heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention is adhered to and fixed to a substrate, and the semiconductor device is already fixed with a sealing resin for embedding the semiconductor device after adhering and fixing the semiconductor device to the sheet at arbitrary intervals. Seal it.

Next, the plurality of semiconductor elements, the sealing resin, and the heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor element, which are sealed through heating and peeling, are peeled together from the substrate. Next, the heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor element of the present invention is peeled from the semiconductor element sealed with a resin.

Then, various patterns are printed in the region between the semiconductor element and the semiconductor element interface so that a wiring lead or the like is formed. The wiring lead forms bumps and the like which are spherical connection electrodes at the semiconductor element interface.

Finally, by cutting a portion of the sealing resin between the semiconductor elements through cutting or the like, it is possible to obtain each semiconductor element mounted with a separate semiconductor element.

Example

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to these Examples, and the evaluation method in Examples is as follows. In addition, "part" and "%" are based on weight unless there is particular notice in an Example.

 (1) silicon transition

Analyze, measure, and measure Si amount I (kcps) present in each area corresponding to a circle having a diameter of 30 mm of a stainless steel sheet (SUS: 430) as a blank (blank, reference, for reference) through fluorescent X-rays. A test piece was prepared by bonding the adhesive layer of the target adhesive sheet under test to the stainless steel sheet, and applying the test piece at 5 ° C. for 4 hours in a dryer at 150 ° C., removing the load and taking out the dryer at 23 ° C. The adhesive sheet to be measured was removed after holding for 2 hours at. The amount of Si F (kcps) present in each area corresponding to a circle having a diameter of 30 mm of the adhered surface of the stainless steel sheet was analyzed by fluorescence X-rays. The silicon transition of the adhesive layer under test is F minus I.

The amount of silicon transition was measured under the following conditions using the model "Supermini" manufactured by Rigaku Corporation according to the above method as an XRF device.

X-ray source: vertical Rh tube

Analysis range: in a circle with a diameter of 30 mm

Spectroscopic Crystal: Si-Kα

Output: 50 kv, 70 mA

(2) storage modulus

The adhesive sheets to be measured were laminated multiple times in an environment of 23 ° C. and 50% RH, respectively, and treated in an autoclave of 50 ° C. and 5 atm for 20 minutes to prepare an adhesive layer having a thickness of 1.0 mm. Dynamic viscoelasticity measurement method based on JIS K7244 (temperature range -70 to 170 ℃, heating rate 5 ℃ /) using the "ARES-G2" manufactured by TA Instruments Viscoelastic spectra were measured under the conditions of minutes, frequency of 1 Hz, and amplitude of 0.1% to determine the storage modulus at 23 ° C and 150 ° C.

(3) gel fraction

0.1 g of the adhesive layer to be measured was taken, packaged with a porous PTFE sheet (manufactured by Nitto Denko Co., Ltd.) having a thickness of 85 μm, an average pore diameter of 0.2 μm, and a porosity of 75%, and then well tied with a string. The weight was measured and used as the weight after packaging. In this aspect, the weight before impregnation is the total weight of the adhesive layer (adhesive layer taken above), the PTFE sheet and the string. In addition, the total weight of the PTFE sheet and string was measured and the weight was used as the weight of the package.

Next, the adhesive layer was wrapped with a PTFE sheet in the above, and the product (referred to as "sample"), which was well bound with a string, was placed in a 50 ml container filled with toluene and left at 23 ° C. for 7 days, followed by a sample from the container (toluene After the treatment) was taken out and transferred to an aluminum cup and dried in a dryer at 130 ° C. for 2 hours to remove toluene, the weight thereof was measured and used as the weight after impregnation, and then the gel fraction was calculated through the following formula.

 Gel fraction (% by weight) = {(A-B) / (C-B)} × 100

Wherein A represents the weight after impregnation, B represents the weight of the package and C represents the weight before impregnation.

(4) Peel Adhesion

A test piece was prepared by lining the adhesive sheet with a PET film having a thickness of 25 μm and cutting the adhesive sheet after the lining into a rectangle of 20 mm × 200 mm. 2 kg of rollers were reciprocated once in the test piece, and the exposed adhesive surface was pressed on a stainless steel (SUS: 304) plate, and the obtained material was held for 30 minutes in an environment of 23 ° C and RH50%, followed by a tensile tester (Shimazu Peeling strength under conditions of peeling angle of 180 ° and tensile velocity of 300 mm / min after heating at 23 ° C. and 150 ° C. for 4 hours using the Corporation make, trade name “Densyron”). And peeling adhesive force in the conditions which peeling angle is 15 degrees and tensile rate is 300 mm / min after heating at 23 degreeC and 150 degreeC for 4 hours were measured, respectively.

(5) the weight average molecular weight of the soluble portion of the adhesive

The weight average molecular weight of the soluble part of an adhesive agent was measured by the method of measuring the weight average molecular weight of the soluble part (sol part) obtained by toluene extraction.

About 0.1 g of the adhesive layer to be measured was taken from the adhesive sheet, packaged with a porous PTFE sheet (manufactured by Nitto Denko Co., Ltd.) having a thickness of 85 µm, an average diameter of 0.2 µm, and a porosity of 75%, and then well tied with a string. All.

Next, the adhesive layer, which was packaged with PTFE sheet and bound together with a string, was placed in a 50 ml container filled with toluene, and left at 23 ° C. for 7 days, and then the toluene solution (containing the extracted sol portion) was taken out. The sol portion was obtained by evaporation under reduced pressure to evaporate the solvent (toluene).

The sol portion was dissolved in tetrahydrofuran (THF) and the weight average molecular weight of the sol portion was measured under the following measurement conditions using a GPC apparatus (manufactured by TOSOHCORPORATION, HLC-8220GPC). The molecular weight can be determined using standard polystyrene conversion.

Sample concentration: 0.2 wt% (tetrahydrofuran (THF) solution)

Sample injection volume: 10 μl

Eluent: THF

Flow rate: 0.6 ml / min

Measuring temperature: 40 ℃

Column: sample column, TSKguardcolumnSuperHZ-H (1) + TSKgelSuperHZM-H (2)

Reference column: TSKgelSuperH-RC (1)

Detection system: Differential Refractometer (RI)

(6) Appearance evaluation of the contact surface of the first adhesive layer and the chip electrode

In the chip (chip whose electrode material is gold), the interface of one side with the electrode is laminated to the first adhesive layer of the heat-resistant pressure-sensitive adhesive sheet of the present invention, placed in an oven and heated at 150 ° C. for 4 hours, and then the chip is peeled from the adhesive sheet. The adhesive surface of the chip was observed using a microscope (manufactured by KEYE NCE CORPORATION, trade name: VHX-100, magnification: 200 times) to confirm the presence or absence of an adhesive layer component directly attached to the chip electrode. Evaluation was performed according to the following criteria.

○: Almost no adhesive layer component is present on the chip electrode

(Triangle | delta): A small amount of adhesive bond layer components adhere to a chip electrode

X: A large amount of adhesive layer component adheres to the chip electrode

(7) Evaluation of Fixability of the First Adhesive Layer

The second adhesive layer of the heat-resistant pressure-sensitive adhesive sheet of the present invention is laminated on a SUS: 304 stainless steel substrate, and the interface of one side provided with a plurality of chip (chips with electrode material of gold) electrode is attached to the first adhesive layer of the heat-resistant pressure-sensitive adhesive sheet. After laminating and sealing together with the sealing resin in the cavity of the mold, the chip in the first adhesive layer using a two-dimensional measuring machine (model: "YVM-3020VT", manufactured by Guangdong Wonxing Hengjun Precision Instrument Co., Ltd.) By observing the relative position change of and the position variation amount exceeded 0.005 mm, it was recognized that the position offset occurred and the evaluation was performed according to the following criteria.

(Circle): Number of chips in which the position offset in the 1st adhesive bond layer was generated <0.1%.

X: number of chips in which the position offset in the 1st adhesive bond layer generate | occur | produced> 0.1%.

(8) Evaluation of Fixability of the Second Adhesive Layer

The second adhesive layer of the heat-resistant pressure-sensitive adhesive sheet of the present invention is laminated on a SUS: 304 stainless steel substrate, and the interface of one side provided with a plurality of chip (chips with electrode material of gold) electrode is attached to the first adhesive layer of the heat-resistant pressure-sensitive adhesive sheet. After laminating and sealing together with the sealing resin in the cavity of the mold, heating at 150 ° C. for 4 hours, cutting the resin after molding to a corresponding size, and slipping of the position of the adhesive sheet on the stainless steel substrate, or hearing the edges or A situation of poor adhesion such as dropout was visually observed, and evaluation was performed according to the following criteria.

(Circle): No slipping, no bad edges, no lifting or falling edges

X: Slips exist and a situation of adhesion failure occurs, such as edges are lifted or dropped.

(9) Peelability Evaluation of the First Adhesive Layer

The interface of one side with a plurality of chip (chip with electrode material) electrode was uniformly laminated on the first adhesive layer of the heat resistant pressure-sensitive adhesive sheet and heated at 150 ° C. for 4 hours, followed by PVC single-sided tape (trade name: SPV-224, After Nitto Denko Co., Ltd.) was adhered to the other side of the chip, the chip was observed to be transferred from the first adhesive layer to the PVC single-sided tape with a 180 ° peeling heat-resistant pressure-sensitive adhesive sheet, and evaluation was performed according to the following criteria.

◎: The number of chips remaining in the first adhesive layer is zero

○: the number of chips remaining in the first adhesive layer is less than 0.1%

Δ: The number of chips remaining in the first adhesive layer is 0.1% to 1%

X: The number of chips remaining in the first adhesive layer is greater than 1%

(10) Peelability Evaluation of Second Adhesive Layer

The second adhesive layer of the heat-resistant pressure-sensitive adhesive sheet is bonded to a SUS: 304 stainless steel substrate and heated at 150 ° C. for 4 hours, and then the heat-resistant pressure-sensitive adhesive sheet is peeled at 15 ° to give the subjective hand feel the second adhesive on the peeling side. The layer was checked whether it was easily peelable from the stainless steel substrate and the evaluation was carried out according to the following criteria.

○: very easily peeled off

△: peeled relatively easily

×: not easily peeled off

(11) comprehensive evaluation

Based on the above evaluation results, comprehensive evaluation was performed according to the following criteria.

○: excellent overall effect

△: good overall effect

×: The overall effect is bad

Example 1

A polyethylene terephthalate (PET) film (trade name: biaxially stretched polyester film, manufactured by Nanjing Yabolian New Material Technology Co., Ltd., China) having a thickness of 75 µm was used as the base layer.

30 parts by weight of polydimethylsiloxane "XB-601" having terminal vinyl group (manufactured by Guangzhou Jiberu Chemical Industry Co., Ltd.), manufactured by vinyl group MQ resin "VSP8201-1" (China Chengdu Boerdaif Science and Technology Co., Ltd.) ) 70 parts by weight, crosslinking agent "91A" (manufactured by Jiangxi Lansingxing Organic Silicon Co., Ltd.) 1.8 parts by weight and 2 parts by weight of platinum catalyst "CATA 12070" (manufactured by Jiangxi Lansingxing Organic Silicon Co., Ltd.) in toluene After adding and uniformly dispersing, the obtained dispersion was applied to one side of the substrate layer and dried to prepare a first adhesive layer having a thickness of 25 μm.

Next, polydimethylsiloxane "107 silicone rubber" (manufactured by Shenzhen Jifeng Silicone Fluorine Material Co., Ltd.) 55 parts by weight, vinyl MQ resin "VSP8201-4" (manufactured by Chengdu Boye Aif Science and Technology Co., Ltd.) 45 weight Part, 1.5 parts by weight of the crosslinking agent "91A" (manufactured by Jiangxi Lansingxing Organic Silicon Co., Ltd.) and 2 parts by weight of the platinum catalyst "CATA 12070" (manufactured by Jiangxi Lansingxing Organic Silicon Co., Ltd.) in toluene The dispersion obtained by dispersing in a stable manner was applied to the other side of the substrate layer and dried to prepare a second adhesive layer having a thickness of 25 μm.

This obtained the heat resistant pressure-sensitive adhesive sheet for semiconductor device manufacture. The evaluation results are as shown in Table 1.

Example 2

The same method as in Example 1, except that the amount of the polydimethylsiloxane having terminal vinyl groups added to the first adhesive layer was set to 27 parts by weight, and the amount of the vinyl group MQ resin added to the first adhesive layer was set to 73 parts by weight. Thus, a heat resistant pressure-sensitive adhesive sheet for semiconductor device production was obtained. The evaluation results are as shown in Table 1.

Example 3

The same method as in Example 1 except that the amount of the polydimethylsiloxane having terminal vinyl groups added to the first adhesive layer was set to 23 parts by weight, and the amount of the vinyl group MQ resin added to the first adhesive layer was set to 77 parts by weight. Thus, a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device was obtained. The evaluation results are as shown in Table 1.

Example 4

The same method as in Example 1 except that the amount of polydimethylsiloxane having terminal vinyl groups added to the first adhesive layer was set to 20 parts by weight, and the amount of vinyl group MQ resin added to the first adhesive layer was set to 80 parts by weight. Thus, a heat resistant pressure-sensitive adhesive sheet for semiconductor device production was obtained. The evaluation results are as shown in Table 1.

Example 5

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 25 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 75 parts by weight, and added to the second adhesive layer. A heat resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 80 parts by weight and the amount of the vinyl group MQ resin added to the second adhesive layer was set to 20 parts by weight. . The evaluation results are as shown in Table 1.

Example 6

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 25 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 75 parts by weight, and added to the second adhesive layer. A heat resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 60 parts by weight and the amount of vinyl group MQ resin added to the second adhesive layer was set to 40 parts by weight. . The evaluation results are as shown in Table 2.

Example 7

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 25 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 75 parts by weight, and added to the second adhesive layer. A heat resistant pressure-sensitive adhesive sheet for semiconductor device production was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 50 parts by weight and the amount of vinyl group MQ resin added to the second adhesive layer was set to 50 parts by weight. . The evaluation results are as shown in Table 2.

Example 8

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 25 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 75 parts by weight, and added to the second adhesive layer. The heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacture was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 20 parts by weight and the amount of vinyl group MQ resin added to the second adhesive layer was set to 80 parts by weight. . The evaluation results are as shown in Table 2.

Comparative Example 1

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 15 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 85 parts by weight, and added to the second adhesive layer. A heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 85 parts by weight and the amount of vinyl group MQ resin added to the second adhesive layer was set to 15 parts by weight. . The evaluation results are as shown in Table 2.

Comparative Example 2

The addition amount of the polydimethylsiloxane having a terminal vinyl group added to the first adhesive layer was set to 10 parts by weight, the addition amount of the vinyl group MQ resin added to the first adhesive layer was set to 90 parts by weight, and added to the second adhesive layer. A heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing was obtained in the same manner as in Example 1 except that the amount of polydimethylsiloxane was set to 13 parts by weight and the amount of vinyl group MQ resin added to the second adhesive layer was set to 87 parts by weight. It was. The evaluation results are as shown in Table 2.

As can be seen from Table 1 and Table 2, the heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device of the present invention has excellent heat resistance and is bonded to the adherend, heated at 150 ° C. for 4 hours, and then peeled off, followed by silicon transition of the adherend interface. Since the amount is small, the penetration of the sealing resin can be effectively prevented, and the peeling is easy even after a long heating step at a high temperature, and since the adhesive hardly remains on the adherend interface after peeling, the yield and reliability of the product can be remarkably improved. .

However, in Comparative Examples 1 and 2, since the amount of silicon transition transferred from the first adhesive layer to the interface of the adherend is large, peeling after use is difficult and the adhesive after peeling remains.

In addition, as shown in Figs. 3 and 4, the contact surface of the first adhesive layer and the chip electrode of the heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing of Examples 1 and 4 is excellent in appearance evaluation, the adhesive layer component on the chip electrode Although this is hardly attached or a small amount is attached, as shown in Fig. 5, the contact surface of the first adhesive layer of Comparative Example 1 and the chip electrode has poor appearance evaluation, and a large amount of adhesive layer components are attached to the chip electrode.

10: base material layer
20: first adhesive layer
30: second adhesive layer
40: first release film
50: second release film

Claims (16)

As a heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture,
Base layer;
A first adhesive layer formed on one side of the base layer; And
It includes a second adhesive layer formed on the other side of the base layer,
The adhesive sheet is adhered to the adherend, is heated after 4 hours at 150 ℃ peeled, the amount of silicon transition transferred from the first adhesive layer to the interface of the adherend is a semiconductor device, characterized in that ≤ 0.01 g / m ² Heat-resistant pressure-sensitive adhesive sheet for production. The method of claim 1,
The first adhesive layer and the second adhesive layer is a heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device, characterized in that the organosilicon-based adhesive. The method according to claim 1 or 2,
The 180 ° peel adhesive force at 20 to 25 ° C. of the first adhesive layer is 0.1 to 2 N / 20 mm. 10. The method according to claim 1 or 2,
180 degree peeling adhesive force after the said 1st adhesive bond layer is heated at 150 degreeC for 4 hours is 0.2-3 N / 20 mm, The heat resistant pressure-sensitive adhesive sheet for semiconductor device manufacture characterized by the above-mentioned. The method according to claim 1 or 2,
The first adhesive layer has a storage modulus at 20 to 25 ° C. of 0.6 × 10 ⁵ to 1.7 × 10 ⁵ Pa, wherein the heat-resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device is characterized in that the first adhesive layer. The method according to claim 1 or 2,
The first adhesive layer has a storage modulus at 150 ° C. of 0.5 × 10 ⁵ to 0.8 × 10 ⁵ Pa, wherein the heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device is characterized by the above-mentioned. The method according to claim 1 or 2,
The gel fraction of the adhesive of the first adhesive layer is 50 to 70%, the weight average molecular weight of the soluble portion is 2,000 to 5,000, heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing. The method according to claim 1 or 2,
The 15 ° peel adhesive force at 20 to 25 ° C. of the second adhesive layer is 2 to 100 N / 20 mm. 10. The method according to claim 1 or 2,
15 degree peeling adhesive force after the said 2nd adhesive bond layer is heated at 150 degreeC for 4 hours is 3-130 N / 20 mm, The heat resistant pressure sensitive adhesive sheet for semiconductor device manufacture characterized by the above-mentioned. The method according to claim 1 or 2,
The second adhesive layer has a storage modulus at 20 to 25 ° C. of 0.8 × 10 ⁵ to 2.5 × 10 ⁵ Pa, wherein the heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device is characterized by the above-mentioned. The method according to claim 1 or 2,
The second elastic adhesive layer has a storage modulus at 150 ° C. of 0.5 × 10 ⁵ to 1.6 × 10 ⁵ Pa. The method according to claim 1 or 2,
The gel fraction of the adhesive of the second adhesive layer is 40 to 90%, the weight-average molecular weight of the soluble portion is 2,000 to 6,000, characterized in that the heat-resistant pressure-sensitive adhesive sheet for semiconductor device manufacturing. The method according to claim 1 or 2,
The base layer is a polyester film, polyamide film, polyimide film, polyphenylene sulfide film, polyetherimide film, polyamideimide film, polyetherketone (PEK) film, polytetrafluoroethylene (PTFE) film, Ethylenetetrafluoroethylene (ETFE) film, fluorinated ethylene propylene (FEP) film, polyvinylidenedifluoride (PVDF) film, polychlorotrifluoroethylene (PCTFE) film film, or ethylene and chlorotrifluoro A heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device, characterized in that the molar ratio of ethylene is selected from alternating copolymer films of 1: 1. The method according to claim 1 or 2,
Further comprising a first release film and a second release film, the first release film is installed on one side opposite to the base layer in the first adhesive layer, the second release film is the second adhesive layer in the It is provided in one side opposite to a base material layer, The heat resistant pressure-sensitive adhesive sheet for semiconductor element manufacture characterized by the above-mentioned. The method according to claim 1 or 2,
The thickness of the first adhesive layer or the second adhesive layer is 5 ~ 50 ㎛ heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device. A method for manufacturing a semiconductor device, comprising using a heat resistant pressure-sensitive adhesive sheet for manufacturing a semiconductor device according to any one of claims 1 to 15.

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