KR20190089630A - Thermo electric element - Google Patents

Abstract

The present invention relates to a thermoelectric element with excellent heat conductivity and high reliability. According to one embodiment of the present invention, the thermoelectric element comprises: a metal supporter; a first thermal conductive layer disposed on the metal supporter and made of a resin composition including epoxy resin and an inorganic filler; a second thermal conductive layer disposed on the first thermal conductive layer and made of a resin composition including silicone resin and an inorganic filler; a plurality of first electrodes disposed on the second thermal conductive layer; a plurality of P- and N-type thermoelectric legs alternatively disposed on the first electrodes; a plurality of second electrodes disposed on the P- and N-type thermoelectric legs; a third thermal conductive layer disposed on the second electrodes and made of the same resin composition as that of the second thermal conductive layer; and a fourth thermal conductive layer disposed on the third thermal conductive layer and made of the same resin composition as that of the first thermal conductive layer. The second thermal conductive layer surrounds the upper surface of the first thermal conductive layer and a side surface of the first thermal conductive layer, and the third thermal conductive layer surrounds the upper surface of the fourth thermal conductive layer and a side surface of the fourth thermal conductive layer.

Description

[0001] THERMO ELECTRIC ELEMENT [0002]

The present invention relates to a thermoelectric element, and more particularly, to a substrate and an electrode structure of a thermoelectric element.

Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes inside a material, which means direct energy conversion between heat and electricity.

Thermoelectric elements are collectively referred to as elements utilizing thermoelectric phenomenon and have a structure in which a p-type thermoelectric material and an n-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.

The thermoelectric element can be classified into a device using a temperature change of electrical resistance, a device using a Seebeck effect that generates electromotive force by a temperature difference, a device using a Peltier effect that is a phenomenon in which heat is generated by heat or a heat is generated .

Thermoelectric devices are widely applied to household appliances, electronic components, and communication components. For example, a thermoelectric element can be applied to a cooling device, a heating device, a power generation device, and the like. As a result, there is a growing demand for thermoelectric performance of thermoelectric elements.

The thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, wherein a plurality of thermoelectric legs are arranged in an array between the upper substrate and the lower substrate, a plurality of upper electrodes are disposed between the plurality of thermoelectrons and the upper substrate, A plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate. Here, the plurality of upper electrodes and the plurality of lower electrodes connect the thermoelectric legs in series or in parallel.

In general, the upper substrate and the lower substrate may be aluminum oxide (Al ₂ O ₃ ) substrates. Due to the problem of flatness, the aluminum oxide (Al ₂ O ₃ ) substrate must be maintained at a certain thickness or more, thereby increasing the thickness of the entire thermoelectric device.

SUMMARY OF THE INVENTION The present invention provides a substrate and an electrode structure of a thermoelectric element.

A thermoelectric device according to an embodiment of the present invention includes a metal support, a first thermally conductive layer disposed on the metal support, the first thermally conductive layer being made of a resin composition comprising an epoxy resin and an inorganic filler, A second thermally conductive layer made of a resin composition comprising a silicone resin and an inorganic filler, a plurality of first electrodes disposed on the second thermally conductive layer, a plurality of P-type thermoelectric elements alternately arranged on the plurality of first electrodes, And a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, the plurality of second electrodes disposed on the plurality of second electrodes, A third thermally conductive layer made of the same resin composition as the resin composition, and a second thermally conductive layer disposed on the third thermally conductive layer and made of the same resin composition as the first thermally conductive layer Wherein the second thermally conductive layer is disposed so as to surround the upper surface of the first thermally conductive layer and the side surface of the first thermally conductive layer and the third thermally conductive layer is disposed on the upper surface of the fourth thermally conductive layer, 4 heat conduction layer.

The width of the metal support may be greater than the width of the first thermally conductive layer and the second thermally conductive layer may be further disposed on at least a portion of a side of the first thermally conductive layer and an upper surface of the metal support.

The width of the second thermally conductive layer may be 1.01 to 1.2 times the width of the first thermally conductive layer.

The second thermally conductive layer may bond the first thermally conductive layer and the plurality of first electrodes.

The second thermally conductive layer may further adhere the first thermally conductive layer and the metal support.

At least a part of the side surfaces of the plurality of first electrodes may be embedded in the second thermally conductive layer.

0.1 to 0.9 times the thickness of the side surfaces of the plurality of first electrodes may be embedded in the second thermally conductive layer.

The inorganic filler contained in the resin composition constituting the first heat conductive layer and the fourth heat conductive layer may include at least one of aluminum oxide, aluminum nitride and boron nitride.

The boron nitride may be a boron nitride aggregate in which plate-shaped boron nitride is aggregated.

The silicone resin included in the resin composition forming the second thermally conductive layer may be polydimethylsiloxane (PDMS), and the inorganic filler included in the resin composition forming the second thermally conductive layer may be aluminum oxide.

According to the embodiment of the present invention, a thermoelectric element having excellent thermal conductivity and high reliability can be obtained. Particularly, the thermoelectric device according to the embodiment of the present invention can be realized with a thin thickness, and has high resistance to temperature change, so that breakage or peeling phenomenon according to temperature change can be minimized.

Fig. 1 is a cross-sectional view of the thermoelectric element, and Fig. 2 is a perspective view of the thermoelectric element.
3 is an example of a cross-sectional view of the thermoelectric element on the lower substrate side.
4 is another example of a cross-sectional view of the thermoelectric element on the lower substrate side.
5 is a cross-sectional view of a lower substrate side of a thermoelectric device according to an embodiment of the present invention.
6 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention.
7 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention.
8 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention.
9 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention.
10 is a diagram illustrating an example in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier,
11 is a diagram illustrating an example in which a thermoelectric element according to an embodiment of the present invention is applied to a refrigerator.

The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated and described in the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms including ordinal, such as second, first, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

Fig. 1 is a cross-sectional view of the thermoelectric element, and Fig. 2 is a perspective view of the thermoelectric element.

1 and 2, a thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, (160).

The lower electrode 120 is disposed between the lower substrate 110 and the lower surface of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 is disposed between the upper substrate 160 and the P- Type thermoelectric transducer 130 and the upper surface of the N-type thermoelectric leg 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140, which are disposed between the lower electrode 120 and the upper electrode 150 and are electrically connected to each other, may form a unit cell.

For example, when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the lead wires 181 and 182, the current flows from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect, The substrate on which the current flows can act as a cooling part, and the substrate through which current flows from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 can be heated and act as a heat generating part.

Here, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth telluride (Bi-Te) thermoelectric legs containing bismuth (Bi) and tellurium (Te) as main raw materials. The P-type thermoelectric leg 130 is formed of a material selected from the group consisting of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron 99 to 99.999 wt% of a bismuth telluride (Bi-Te) based raw material containing at least one of gallium (Ga), tellurium (Te), bismuth (Bi) and indium (In) and 0.001 Lt; / RTI > to 1 wt%. For example, the base material may be Bi-Se-Te, and may further contain Bi or Te in an amount of 0.001 to 1 wt% of the total weight. The N-type thermoelectric leg 140 is made of selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B) 99 to 99.999 wt% of a bismuth telluride (Bi-Te) based raw material containing at least one of gallium (Ga), tellurium (Te), bismuth (Bi) and indium (In) and 0.001 Lt; / RTI > to 1 wt%. For example, the base material may be Bi-Sb-Te and may further contain Bi or Te in an amount of 0.001 to 1 wt% of the total weight.

The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk or laminated form. Generally, the bulk type P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is manufactured by heat-treating the thermoelectric material to produce an ingot, pulverizing and sieving the ingot to obtain a thermoelectric leg powder, Sintered body, and cutting the sintered body. The laminated P-type thermoelectric leg 130 or the laminated N-type thermoelectric leg 140 is formed by applying a paste containing a thermoelectric material on a sheet-shaped substrate to form a unit member, then stacking and cutting the unit member Can be obtained.

At this time, the pair of the P-type thermoelectric legs 130 and the N-type thermoelectric legs 140 may have the same shape and volume, or may have different shapes and volumes. Since the electrical conduction characteristics of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different from each other, the height or the cross-sectional area of the N-type thermoelectric leg 140 may be set to a height or a cross- May be formed differently.

The performance of a thermoelectric device according to an embodiment of the present invention can be represented by a Gebeck index. The whiteness index (ZT) can be expressed by Equation (1).

Here, α is the Seebeck coefficient [V / K], σ is the electric conductivity [S / m], and α ² σ is the power factor (W / mK ² ). T is the temperature, and k is the thermal conductivity [W / mK]. k is a · c _p · ρ where a is the thermal diffusivity [cm ² / S], c _p is the specific heat [J / gK], and ρ is the density [g / cm ³ ].

In order to obtain the whiteness index of the thermoelectric element, the Z value (V / K) is measured using a Z meter, and the Zebek index (ZT) can be calculated using the measured Z value.

Here, the lower electrode 120 disposed between the lower substrate 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, the upper substrate 160 and the P-type thermoelectric leg 130, and the N- The upper electrode 150 disposed between the thermoelectric legs 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).

The sizes of the lower substrate 110 and the upper substrate 160 may be different. For example, the volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 may be greater than the volume, thickness, or area of the other. Thus, the heat absorption performance or the heat radiation performance of the thermoelectric element can be enhanced.

In addition, a heat radiation pattern, for example, a concavo-convex pattern may be formed on at least one surface of the lower substrate 110 and the upper substrate 160. Thus, the heat radiation performance of the thermoelectric element can be enhanced. When the concavo-convex pattern is formed on the surface contacting the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the junction characteristics between the thermoelectric leg and the substrate can be improved.

At this time, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal columnar shape, an elliptical columnar shape, or the like.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a laminated structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-like base material and then cutting the same. Thus, it is possible to prevent the loss of the material and improve the electric conduction characteristic.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method. According to the zone melting method, an ingot is produced using a thermoelectric material, refined to heat the ingot slowly in a single direction, and slowly cooled to obtain a thermoelectric leg. According to the powder sintering method, an ingot is produced using a thermoelectric material, and then the ingot is pulverized and sieved to obtain a thermoelectric material powder, and the thermoelectric material is obtained by sintering the thermoelectric material.

Fig. 3 is an example of a cross-sectional view of the thermoelectric element on the lower substrate side, and Fig. 4 is another example of a cross-sectional view of the thermoelectric element on the lower substrate side.

3 to 4, the thermoelectric element 100 may be disposed on the metal support 200. The lower substrate 110 of the thermoelectric element 100 is disposed on the metal support 200 and a plurality of lower electrodes 120 may be disposed on the lower substrate 110.

The structures of the P-type thermoelectric leg, the N-type thermoelectric leg, the upper electrode, and the upper substrate are the same as those described with reference to FIGS. 1 and 2, and therefore duplicate descriptions are omitted.

Referring to FIG. 3, the lower substrate 110 may be an aluminum oxide (Al ₂ O ₃ ) substrate. At this time, due to the flatness problem of the aluminum oxide substrate, the thickness T1 of the lower substrate 110 can not be made 0.65 mm or less. When the thickness of the lower substrate 110 is increased, the thickness of the lower electrode 120 must be thicker, and thus the entire thickness of the thermoelectric element 100 must be increased.

Referring to FIG. 4, the lower substrate 110 may be a thermally conductive layer made of a resin composition including an epoxy resin and an inorganic filler. At this time, since the heat conduction layer does not have a flatness problem, it can be made to have a thin thickness (T2), for example, 0.65 mm or less as compared with an aluminum oxide substrate. In the structure shown in FIG. 4, the lower electrode 120 is formed by placing a Cu substrate on a thermally conductive layer made of a resin composition containing an epoxy resin and an inorganic filler, pressing the Cu substrate, and then etching the Cu substrate into an electrode shape . However, if the thickness of the lower substrate 110 is reduced to 0.65 mm or less, it becomes vulnerable to a change in temperature, and thus the lower substrate 110 and the metal support 200 are peeled off to lower the reliability of the thermoelectric element 100 there is a problem.

FIG. 5 is a cross-sectional view of a lower substrate side of a thermoelectric device according to an embodiment of the present invention, FIG. 6 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention, 8 is a cross-sectional view of a lower substrate side of a thermoelectric device according to another embodiment of the present invention, and FIG. 9 is a cross-sectional view of a thermoelectric device according to another embodiment of the present invention. Sectional view of the lower substrate side.

5, the lower substrate side of the thermoelectric element 500 according to an embodiment of the present invention includes a metal support 510, a first thermally conductive layer 520 disposed on the metal support 510, A second thermally conductive layer 530 disposed on the second thermally conductive layer 520 and a plurality of first electrodes 540 disposed on the second thermally conductive layer 530. As shown in Figs. 1 and 2, a pair of P-type thermoelectric legs and an N-type thermoelectric leg are arranged on each electrode 540, and a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs are interposed A structure in which the upper electrode and the upper substrate are symmetrical with the lower electrode and the lower substrate may be formed. For example, on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, a plurality of second electrodes (not shown) symmetrical to the plurality of first electrodes 540, A third thermally conductive layer (not shown), and a fourth thermally conductive layer (not shown) that is symmetrical to the first thermally conductive layer 520.

Hereinafter, for convenience of explanation, a metal support 510, a first heat conduction layer 520, a second heat conduction layer 530, and a plurality of first heat conduction layers 530, which are disposed under a plurality of P-type thermoelectric legs and a plurality of N- Electrode 540 is mainly described, but the same structure may be arranged symmetrically on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs. That is, the upper substrate side may also be formed in the same structure.

The metal support 510 may be made of aluminum, an aluminum alloy, copper, a copper alloy, or the like. The metal support 510 may support a first thermally conductive layer 520, a second thermally conductive layer 530, a plurality of first electrodes 540, a plurality of P-type thermoelectric legs, and a plurality of N-type thermoelectric legs May be an area directly attached to the application to which the thermoelectric element 500 according to the embodiment of the present invention is applied. The width of the metal support 510 may be greater than the width of the first heat conductive layer 520 and the thickness of the metal support 510 may be greater than the thickness of the first heat conductive layer 520. [

The first thermally conductive layer 520 is disposed on the metal support 510 and comprises a resin composition including an epoxy resin and an inorganic filler. The thickness T3 of the first thermally conductive layer 520 may be 0.01 to 0.65 mm, preferably 0.01 to 0.6 mm, more preferably 0.01 to 0.55 mm, and the thermal conductivity may be 10 W / mK or more, preferably 20 W / mK, more preferably at least 30 W / mK.

For this purpose, the epoxy resin may include an epoxy compound and a curing agent. At this time, the curing agent may be contained in a ratio of 1 to 10 parts by volume of the epoxy compound 10 parts by volume. Here, the epoxy compound may include at least one of a crystalline epoxy compound, amorphous epoxy compound, and silicone epoxy compound. The crystalline epoxy compound may include a mesogen structure. Mesogen is a liquid crystal It is a basic unit and includes a rigid structure. The amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in the molecule, for example, a glycidyl ether compound derived from bisphenol A or bisphenol F. Here, the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polymercaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent and a block isocyanate curing agent, May be mixed and used.

The inorganic filler may comprise aluminum oxide and a plurality of plate-like boron nitride coalesced bunches of boron nitride. The inorganic filler may further comprise aluminum nitride. Here, the surface of the aggregate of boron nitride may be coated with a polymer having the following unit 1, or at least a part of the voids in the aggregate of boron nitride may be filled with a polymer having the following unit 1.

Unit 1 is as follows.

[Unit 1]

Wherein one of R ¹ , R ² , R ³ and R ⁴ is H and the remainder is selected from the group consisting of C ₁ -C ₃ alkyl, C ₂ -C ₃ alkene and C ₂ -C ₃ alkyne, R ⁵ May be a linear, branched, or cyclic divalent organic linker having 1 to 12 carbon atoms.

In one embodiment, one of R ¹ , R ² , R ³ and R ⁴ , except H, is selected from C ₂ -C ₃ alkenes, the other and the other is selected from C ₁ -C ₃ alkyl Can be selected. For example, the polymer according to an embodiment of the present invention may include the following monomer unit 2:

[Unit 2]

Alternatively, the remainder of the R ¹ , R ² , R ³ and R ⁴ may be selected to be different from each other in the group consisting of C ₁ -C ₃ alkyl, C ₂ -C ₃ alkene and C ₂ -C ₃ alkyne have.

As described above, when the polymer according to the unit 1 or the unit 2 is coated on the boron nitride aggregate in which the plate-like boron nitride is aggregated and at least a part of the voids in the boron nitride aggregate are filled, the air layer in the aggregate of the boron nitride is minimized, The heat conduction performance can be enhanced and cracking of the boron nitride aggregate can be prevented by increasing the bonding force between the plate-like boron nitride. When the coating layer is formed on the boron nitride aggregate in which the plate-shaped boron nitride is aggregated, functional groups are easily formed, and when a functional group is formed on the coating layer of the boron nitride aggregate, the affinity with the resin can be increased.

At this time, the metal support 510 and the first thermally conductive layer 520 may be directly bonded without a separate adhesive. To this end, the same resin composition as that of the first thermally conductive layer 520 is coated on the metal support 510 in an uncured state, and the first thermally conductive layer 520 in a cured state is coated on the applied resin composition, The metal support 510 and the first thermally conductive layer 520 can be bonded directly.

Meanwhile, the second thermally conductive layer 530 may be formed of a resin composition including a silicone resin and an inorganic filler. The second thermally conductive layer 530 is disposed between the first thermally conductive layer 520 and the plurality of first electrodes 540 and serves to adhere the plurality of first electrodes 540 to the first thermally conductive layer 520 can do. For example, the silicone resin contained in the resin composition constituting the second thermally conductive layer 530 may be PDMS (polydimethylsiloxane), and the inorganic filler contained in the resin composition constituting the second thermally conductive layer 530 may be aluminum oxide have. Such a resin composition has not only a heat conduction performance but also a high tensile strength, a high thermal expansion coefficient and adhesion performance, and can have a flexible property even when cured. For example, such a resin composition may have a thermal conductivity of 1.8 W / mK or more and a linear thermal expansion coefficient of 125 ppm / [deg.] C or more. In addition, the thermal conductivity of the second thermally conductive layer 530 may be lower than the thermal conductivity of the first thermally conductive layer 520. Accordingly, the first thermally conductive layer 520 and the plurality of electrodes 540 can be stably bonded without deteriorating thermal conductivity. The thickness T4 of the second thermally conductive layer 530 may be 0.001 to 1 times, preferably 0.01 to 0.5 times, more preferably 0.05 to 0.2 times the thickness T3 of the first thermally conductive layer 520 have. When the thickness of the second thermally conductive layer 530 is formed in this numerical range, the thickness of the second thermally conductive layer 530 can be maintained between the first thermally conductive layer 520 and the plurality of first electrodes 540 without interfering with the thermal conductivity of the first thermally conductive layer 520 The adhesive force can be maintained.

For this, a resin composition for forming the second thermally conductive layer 530 is applied on the first thermally conductive layer 520 in an uncured state, a plurality of first electrodes 540 are laminated on the applied resin composition, The plurality of first electrodes 540 and the first thermally conductive layer 520 may be bonded to each other through the second thermally conductive layer 530. [ Accordingly, at least a part of the side surfaces 542 of the plurality of electrodes 540 can be embedded in the second thermally conductive layer 530. [ For example, 0.1 to 0.9 times, preferably 0.2 to 0.8 times, and more preferably 0.3 to 0.7 times of the thickness H of the side surface 542 of the plurality of electrodes 540 is applied to the second heat conductive layer 530 Can be buried. If the thickness H1 of the side surfaces 542 of the plurality of electrodes 540 embedded in the second thermally conductive layer 530 is less than 0.1 times the thickness H of the side surfaces of the plurality of first electrodes 540, At least a portion of the first electrodes 540 may be separated from the second thermally conductive layer 530 and the thickness of the side surfaces 542 of the plurality of first electrodes 540 embedded in the second thermally conductive layer 530 H1) of the first electrode 540 exceeds 0.9 times the thickness H of the side surface 542 of the plurality of electrodes 540, the resin composition 530 constituting the second thermally conductive layer 530 on at least a part of the plurality of first electrodes 540 The bonding force between the electrode and the P-type thermoelectric leg and the bonding force between the electrode and the N-type thermoelectric leg can be weakened.

The second thermally conductive layer 530 may be disposed so as to surround not only the upper surface 524 of the first thermally conductive layer 520 but also the side surface 522 of the first thermally conductive layer 520, 520 may also be disposed on the upper surface 512 of the metal support 510 in contact with the side surface 522 of the metal support 510. The second thermally conductive layer 530 contacts the upper surface 524 of the first thermally conductive layer 520, the side surface 522 of the first thermally conductive layer 520 and the side surface 522 of the first thermally conductive layer 520 The bonding strength between the metal support 510 and the first thermally conductive layer 520 at the edge of the first thermally conductive layer 520 can be increased and the bonding strength between the first thermally conductive layer 520 and the first thermally conductive layer 520 can be increased, The problem that the edge of the heat conductive layer 520 is peeled off from the metal support 510 can be prevented.

Since the second thermally conductive layer 530 has a high thermal expansion coefficient and is flexible even when cured, the first thermally conductive layer 510 and the plurality of first electrodes 540 function as a buffering function against thermal shock caused by a temperature change, Lt; / RTI >

In order to arrange the second thermally conductive layer 530 so as to surround not only the upper surface 524 of the first thermally conductive layer 520 but also the side surface 522 of the first thermally conductive layer 520, the second thermally conductive layer 530 May be larger than the width W1 of the first heat conduction layer 520. [ For example, the width W2 of the second thermally conductive layer 530 may be 1.01 to 1.2 times the width W1 of the first thermally conductive layer 520. The bonding strength between the first thermally conductive layer 520 and the metal support 510 is improved when the width W2 of the second thermally conductive layer 530 is larger than the width W1 of the first thermally conductive layer 520, Thermal shock between the heat conduction layer 520 and the plurality of electrodes 540 can be mitigated.

6, the second thermally conductive layer 530 may extend further in a direction parallel to the upper surface 512 of the metal support 510 on the metal support 510. The extended width W3 may be 0.001 to 0.2 times, preferably 0.01 to 0.1 times the width W2 of the second thermally conductive layer 530 having the structure shown in Fig. When the second thermal conductive layer 530 is further extended on the metal support body 510 in a direction parallel to the upper surface 512 of the metal support body 510, the second thermal conductive layer 530 is interposed between the second thermal conductive layer 530 and the metal support body 510 It is possible to prevent the problem that the edge of the first thermally conductive layer 520 is peeled off from the metal support 510 because the contact area is widened.

Alternatively, as shown in FIG. 7, the second thermally conductive layer 530 may be disposed in a shape spreading laterally from the side surface 522 of the first thermally conductive layer 520. That is, the thickness T4 of the second thermally conductive layer 530 may be thickest at the side surface 522 of the first thermally conductive layer 520, and may be thinner as it is further away from the side surface of the first thermally conductive layer 520 . Since the contact area between the second thermally conductive layer 530 and the metal support 510 is widened when the width W4 of the second thermally conductive layer 530 is wide, 510) are peeled off.

Alternatively, as shown in FIG. 8, grooves 514 may be formed in the metal support 510, and the second thermally conductive layer 530 may be further disposed in the grooves 514 of the metal support 510. The groove 514 is formed along the edge of the first thermally conductive layer 520 and is 0.001 to 2 times the thickness T3 of the first thermally conductive layer 520, preferably 0.01 to 1 time, more preferably 0.1 To one-fold depth (D). When the groove 514 is formed in the metal support 510 and the second heat conductive layer 530 is further disposed in the groove 514, the contact area between the second heat conductive layer 530 and the metal support 510 It is possible to prevent the edge of the first thermally conductive layer 520 from peeling off from the metal support 510. At this time, the grooves 514 may be formed on the upper surface of the metal support 510 in a continuous shape along the edge of the first thermally conductive layer 520. Alternatively, a plurality of grooves 514 may be formed on the upper surface of the metal support 510 in a broken line shape at predetermined intervals along the edge of the first thermally conductive layer 520.

9, the width W5 of the second thermally conductive layer 530 disposed on the side surface 522 of the first thermally conductive layer 520 is greater than the width W5 of the groove 514 of the metal support 510 (W6). The width W6 of the second thermally conductive layer 530 disposed in the groove 514 is smaller than the width W5 of the second thermally conductive layer 530 disposed on the side surface 522 of the first thermally conductive layer 520 It can be narrow. When the width W5 of the second thermally conductive layer 530 is wide, the contact area between the second thermally conductive layer 530 and the metal support 510 is widened, so that the edge of the first thermally conductive layer 520 contacts the metal support 510). ≪ / RTI > Although not shown, the width W5 of the second thermally conductive layer 530 disposed on the side surface 522 of the first thermally conductive layer 520 is wider than the width W6 of the groove 514 of the metal support 510 And may be disposed in contact with the upper surface 512 of the metal support 510.

Hereinafter, an example in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier will be described with reference to FIG.

10 is a diagram illustrating an example in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.

A water purifier 1 to which a thermoelectric device according to an embodiment of the present invention is applied includes a raw water supply pipe 12a, a purified water tank inflow pipe 12b, a purified water tank 12, a filter assembly 13, a cooling fan 14, 15, a cold water supply pipe 15a, and a thermoelectric module 1000.

The raw water supply pipe 12a is a supply pipe for introducing water to be purified water from the water source into the filter assembly 13 and the purified water tank inflow pipe 12b is a pipe for introducing purified water from the filter assembly 13 into the purified water tank 12 And the cold water supply pipe 15a is a supply pipe in which cold water cooled to a predetermined temperature by the thermoelectric module 1000 in the purified water tank 12 is finally supplied to the user.

The purified water tank 12 is cleaned by passing through the filter assembly 13 and temporarily stores purified water to store and supply the water that has flowed through the purified water tank inflow pipe 12b.

The filter assembly 13 is composed of a precipitating filter 13a, a pre-carbon filter 13b, a membrane filter 13c, and a post-carbon filter 13d.

That is, the water flowing into the raw water supply pipe 12a can be purified through the filter assembly 13. [

A heat storage tank 15 is disposed between the water tank 12 and the thermoelectric module 1000 to store cool air formed in the thermoelectric module 1000. The cool air stored in the thermal storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.

The thermal storage tank 15 may be in surface contact with the purified water tank 12 so that cold air can be smoothly transmitted.

As described above, the thermoelectric module 1000 has a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P type semiconductor and the N type semiconductor.

Here, one side may be the purified water tank 12 side and the other side may be the opposite side of the purified water tank 12.

In addition, as described above, the thermoelectric module 1000 is excellent in waterproof and dustproof performance, and the heat flow performance is improved, so that the water tank 12 can be efficiently cooled in the water purifier.

Hereinafter, an example in which a thermoelectric element according to an embodiment of the present invention is applied to a refrigerator will be described with reference to FIG.

11 is a diagram illustrating an example in which a thermoelectric element according to an embodiment of the present invention is applied to a refrigerator.

The refrigerator includes a deep-room evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric module 1000 in the deep-room evaporation room.

The inside of the refrigerator is divided into the deep room storage room and the deep room evaporation room by the deep room evaporation room cover (23).

In detail, the inner space corresponding to the front of the deep evaporation room cover 23 is defined as a deep room storage room, and the inner space corresponding to the rear of the deep room evaporation room cover 23 can be defined as a deep room evaporation room.

A discharge grille 23a and a suction grille 23b may be formed on the front surface of the deep-drawing room seal cover 23, respectively.

The evaporation chamber partition wall 24 is provided at a position spaced forward from the rear wall of the inner cabinet to define a space where the core room storage system is placed and a space where the main evaporator 25 is placed.

The cool air cooled by the main evaporator 25 is supplied to the freezing chamber and then returned to the main evaporator.

The thermoelectric module 1000 is housed in the deep-room evaporation chamber, with the heat absorption surface facing toward the drawer assembly of the deep-room storage room and the heat generation surface facing toward the evaporator. Accordingly, the heat absorbing phenomenon generated in the thermoelectric module 1000 can be used to quickly cool the food stored in the drawer assembly to a cryogenic temperature of minus 50 degrees Celsius.

In addition, as described above, the thermoelectric module 1000 is excellent in waterproof and dustproof performance, and the heat flow performance is improved, so that the drawer assembly can be efficiently cooled in the refrigerator.

The thermoelectric device according to the embodiment of the present invention can be applied to a power generation device, a cooling device, a thermal device, and the like. Specifically, the thermoelectric device according to an embodiment of the present invention mainly includes an optical communication module, a sensor, a medical instrument, a measuring instrument, an aerospace industry, a refrigerator, a chiller, a ventilation sheet, a cup holder, a washing machine, , A water purifier, a power supply for a sensor, a thermopile, and the like.

Here, as an example in which the thermoelectric element according to the embodiment of the present invention is applied to a medical instrument, there is a PCR (Polymerase Chain Reaction) device. The PCR device is a device for amplifying DNA to determine the DNA sequence and is a device that requires precise temperature control and thermal cycling. For this purpose, a Peltier based thermoelectric element can be applied.

Another example in which a thermoelectric element according to an embodiment of the present invention is applied to a medical instrument is a photodetector. Here, the photodetector includes an infrared / ultraviolet detector, a CCD (Charge Coupled Device) sensor, an X-ray detector, and a TTRS (Thermoelectric Thermal Reference Source). A Peltier-based thermoelectric device can be applied for cooling the photodetector. Thus, it is possible to prevent a wavelength change, an output drop, and a resolution degradation due to a temperature rise inside the photodetector.

Another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical instrument includes an immunoassay field, an in vitro diagnostics field, a general temperature control and cooling system, Physiotherapy field, liquid chiller system, and blood / plasma temperature control field. Thus, precise temperature control is possible.

Another example in which a thermoelectric element according to an embodiment of the present invention is applied to a medical instrument is an artificial heart. Thus, power can be supplied to the artificial heart.

Examples of applications of the thermoelectric devices according to the embodiments of the present invention to the aerospace industry include star tracking systems, thermal imaging cameras, infrared / ultraviolet detectors, CCD sensors, Hubble Space Telescopes and TTRS. Accordingly, the temperature of the image sensor can be maintained.

Other examples in which the thermoelectric element according to the embodiment of the present invention is applied to the aerospace industry include a cooling device, a heater, a power generation device, and the like.

In addition, the thermoelectric device according to the embodiment of the present invention can be applied to power generation, cooling, and heating in other industrial fields.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

Claims (10)

Metal support,
A first thermally conductive layer disposed on the metal support and made of a resin composition comprising an epoxy resin and an inorganic filler,
A second thermally conductive layer disposed on the first thermally conductive layer and made of a resin composition including a silicone resin and an inorganic filler,
A plurality of first electrodes disposed on the second thermally conductive layer,
A plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately arranged on the plurality of first electrodes,
A plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs,
A third thermally conductive layer disposed on the plurality of second electrodes and made of the same resin composition as the resin composition forming the second thermally conductive layer,
And a fourth thermally conductive layer disposed on the third thermally conductive layer and made of the same resin composition as the resin composition forming the first thermally conductive layer,
The second thermally conductive layer is disposed so as to surround an upper surface of the first thermally conductive layer and a side surface of the first thermally conductive layer,
And the third thermally conductive layer is disposed so as to surround the upper surface of the fourth thermally conductive layer and the side surface of the fourth thermally conductive layer. The method according to claim 1,
Wherein a width of the metal support is larger than a width of the first heat conductive layer,
Wherein the second thermally conductive layer is further disposed on at least a part of a side surface of the first thermally conductive layer and an upper surface of the metal support. 3. The method of claim 2,
Wherein the width of the second thermally conductive layer is 1.01 to 1.2 times the width of the first thermally conductive layer. 3. The method of claim 2,
And the second thermally conductive layer bonds the first thermally conductive layer and the plurality of first electrodes. 5. The method of claim 4,
And the second thermally conductive layer further bonds the first thermally conductive layer and the metal support. 5. The method of claim 4,
And at least a part of a side surface of the plurality of first electrodes is embedded in the second thermally conductive layer. The method according to claim 6,
Wherein 0.1 to 0.9 times the thickness of the side surface of the plurality of first electrodes is embedded in the second thermally conductive layer. The method according to claim 1,
Wherein the inorganic filler contained in the resin composition constituting the first thermally conductive layer and the fourth thermally conductive layer comprises at least one of aluminum oxide, aluminum nitride and boron nitride. 9. The method of claim 8,
Wherein the boron nitride is a boron nitride aggregate in which plate-shaped boron nitride is aggregated. The method according to claim 1,
Wherein the silicone resin contained in the resin composition forming the second thermally conductive layer is PDMS (polydimethylsiloxane), and the inorganic filler contained in the resin composition forming the second thermally conductive layer is aluminum oxide.

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