KR102478827B1 - Thermoelectric module - Google Patents

Abstract

A thermoelectric module according to an embodiment of the present invention includes a first substrate, a thermoelectric element disposed on the first substrate, a second substrate disposed on the thermoelectric element and having a smaller area than the first substrate, and the thermoelectric element. It is connected to and includes a wire portion for supplying power to the thermoelectric element, and at least one chamfer is formed on the second substrate.

Description

Thermoelectric module {THERMOELECTRIC MODULE}

The present invention relates to a thermoelectric module, and more particularly, to a substrate structure included in the thermoelectric module.

The thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes inside a material, and means a direct energy conversion between heat and electricity.

A thermoelectric element is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a PN junction pair is formed by bonding a P-type thermoelectric material and an N-type thermoelectric material between metal electrodes.

Thermoelectric devices can be classified into devices using temperature changes in electrical resistance, devices using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, and devices using the Peltier effect, a phenomenon in which heat absorption or heat generation occurs due to current. .

Thermoelectric devices are widely applied to home appliances, electronic components, and communication components. For example, the thermoelectric element may be applied to a device for cooling, a device for heating, a device for power generation, and the like. Accordingly, the demand for thermoelectric performance of thermoelectric devices is increasing.

The thermoelectric element includes a substrate, electrodes, and thermoelectric legs, a plurality of thermoelectric legs are disposed in an array form between the upper substrate and the lower substrate, a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate, and a plurality of A plurality of lower electrodes are disposed between the thermoelectric legs and the lower substrate.

At this time, a wire is connected to the electrode, and power is supplied to the thermoelectric element through the wire.

In general, after stacking a lower substrate, a lower electrode, a plurality of thermoelectric legs, an upper electrode, and an upper substrate in that order, a wire is connected to the lower electrode. At this time, since the space between the lower substrate and the upper substrate is narrow, it is difficult to connect wires. Accordingly, when soldering between the lower electrode and the wire is insufficient, the wire is easily separated from the lower electrode, and thus reliability of the thermoelectric element may be lowered.

A technical problem to be achieved by the present invention is to provide a substrate structure of a thermoelectric module.

A thermoelectric module according to an embodiment of the present invention includes a first substrate, a thermoelectric element disposed on the first substrate, a second substrate disposed on the thermoelectric element and having a smaller area than the first substrate, and the thermoelectric element. It is connected to and includes a wire portion for supplying power to the thermoelectric element, and at least one chamfer is formed on the second substrate.

The thermoelectric element includes a first resin layer disposed on the first substrate, a plurality of first electrodes disposed on the first resin layer, a plurality of P-type thermoelectric legs disposed on the plurality of first electrodes, and a plurality of first electrodes disposed on the first resin layer. A plurality of second electrodes disposed on N-type thermoelectric legs, the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and a second resin layer disposed on the plurality of second electrodes, wherein the The wire unit may include a first wire connected to one of the plurality of first electrodes and a second wire connected to another one of the plurality of first electrodes.

The at least one chamfer may be formed on at least one of the one electrode to which the first wire is connected and the other electrode to which the second wire is connected.

The at least one chamfer may include a first chamfer formed on the one electrode to which the first wire is connected and a second chamfer formed on the other electrode to which the second wire is connected.

The first chamfer may be formed at one end of one surface of the second substrate, and the second chamfer may be formed at the other end of the one surface of the second substrate.

At least one of the first chamfer and the second chamfer may include at least one of a straight portion and a curved portion.

At least one of the first chamfer and the second chamfer includes a first straight line part disposed in a first direction, a second straight line part formed in a direction perpendicular to the first direction, and the first straight part and the second straight line part It may include curved parts disposed between the parts.

The thermoelectric element may further include a sealing portion surrounding a side surface of the thermoelectric element, and the sealing portion may be disposed to fill at least one chamfer formed in the second substrate.

According to an embodiment of the present invention, a thermoelectric module having excellent thermal conductivity and high reliability can be obtained. In particular, according to an embodiment of the present invention, it is possible to obtain a thermoelectric module in which wires are easily connected and wires are stably connected to electrodes.

1 is a cross-sectional view of a thermoelectric module according to an embodiment of the present invention.
2 is a perspective view of a thermoelectric module according to an embodiment of the present invention.
3 is an exploded perspective view of a thermoelectric module according to an embodiment of the present invention.
4 is a cross-sectional view of a thermoelectric element included in a thermoelectric module according to an embodiment of the present invention.
5 to 8 are top views of a thermoelectric module according to an exemplary embodiment of the present invention.
9 is a block diagram of a water purifier to which a thermoelectric module according to an embodiment of the present invention is applied.
10 is a block diagram of a refrigerator to which a thermoelectric module according to an embodiment of the present invention is applied.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

However, the technical idea of the present invention is not limited to some of the described embodiments, but may be implemented in a variety of different forms, and if it is within the scope of the technical idea of the present invention, one or more of the components among the embodiments can be selectively implemented. can be used by combining and substituting.

In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless explicitly specifically defined and described, can be generally understood by those of ordinary skill in the art to which the present invention belongs. It can be interpreted as meaning, and commonly used terms, such as terms defined in a dictionary, can be interpreted in consideration of contextual meanings of related technologies.

Also, terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention.

In this specification, the singular form may also include the plural form unless otherwise specified in the phrase, and when described as "at least one (or more than one) of A and (and) B and C", A, B, and C are combined. may include one or more of all possible combinations.

Also, terms such as first, second, A, B, (a), and (b) may be used to describe components of an embodiment of the present invention.

These terms are only used to distinguish the component from other components, and the term is not limited to the nature, order, or order of the corresponding component.

In addition, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected to, combined with, or connected to the other component, but also with the component. It may also include the case of being 'connected', 'combined', or 'connected' due to another component between the other components.

In addition, when it is described as being formed or disposed on the "top (above) or bottom (bottom)" of each component, the top (top) or bottom (bottom) is not only a case where two components are in direct contact with each other, but also one A case in which another component above is formed or disposed between two components is also included. In addition, when expressed as "up (up) or down (down)", it may include the meaning of not only an upward direction but also a downward direction based on one component.

1 is a cross-sectional view of a thermoelectric module according to an embodiment of the present invention, FIG. 2 is a perspective view of a thermoelectric module according to an embodiment of the present invention, and FIG. 3 is an exploded perspective view of a thermoelectric module according to an embodiment of the present invention. 4 is a cross-sectional view of a thermoelectric element included in a thermoelectric module according to an embodiment of the present invention. 5 to 8 are top views of a thermoelectric module according to an exemplary embodiment of the present invention.

1 to 4, the thermoelectric element 100 includes a first resin layer 110, a plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, and a plurality of N-type thermoelectric legs 140. ), a plurality of second electrodes 150 and a second resin layer 160.

The plurality of first electrodes 120 are disposed between the first resin layer 110 and the lower surfaces of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140, and the plurality of second electrodes 150 ) is disposed between the upper surfaces of the second resin layer 160 and the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 . Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the plurality of first electrodes 120 and the plurality of second electrodes 150 . A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the first electrode 120 and the second electrode 150 and electrically connected to each other may form a unit cell.

A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 may be disposed on each first electrode 120 , and each first electrode 120 may be disposed on each second electrode 150 . The pair of N-type thermoelectric legs 140 and the P-type thermoelectric legs 130 may be disposed such that one of the pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 overlaps with each other.

Here, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth steluride (Bi-Te)-based thermoelectric legs containing bismuth (Bi) and tellurium (Te) as main materials. The P-type thermoelectric leg 130 includes antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), and gallium with respect to 100 wt% of the total weight. (Ga), tellurium (Te), bismuth (Bi) and indium (In) bismuth steluride (Bi-Te)-based main raw material containing at least one of 99 to 99.999 wt% and a mixture containing Bi or Te 0.001 It may be a thermoelectric leg containing 1wt% to 1wt%. For example, the main raw material is Bi-Se-Te, and Bi or Te may be further included in an amount of 0.001 to 1 wt% of the total weight. The N-type thermoelectric leg 140 includes selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), and gallium with respect to 100 wt% of the total weight. (Ga), tellurium (Te), bismuth (Bi) and indium (In) bismuth steluride (Bi-Te)-based main raw material containing at least one of 99 to 99.999 wt% and a mixture containing Bi or Te 0.001 It may be a thermoelectric leg containing 1wt% to 1wt%. For example, the main raw material is Bi-Sb-Te, and Bi or Te may be further included in an amount of 0.001 to 1 wt% of the total weight.

The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk or stacked type. In general, the bulk P-type thermoelectric leg 130 or the bulk-type N-type thermoelectric leg 140 heat-treats a thermoelectric material to produce an ingot, crushes and sieves the ingot to obtain powder for the thermoelectric leg, and then obtains powder for the thermoelectric leg. It can be obtained through a process of sintering and cutting the sintered body. The laminated P-type thermoelectric leg 130 or the laminated N-type thermoelectric leg 140 is formed by applying a paste containing a thermoelectric material on a sheet-shaped substrate to form unit members, and then stacking and cutting the unit members. can be obtained

In this case, the pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 may have the same shape and volume or different shapes and volumes. For example, since the electrical conduction characteristics of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different, the height or cross-sectional area of the N-type thermoelectric leg 140 is set as the height or cross-sectional area of the P-type thermoelectric leg 130. may be formed differently.

The performance of the thermoelectric element according to an embodiment of the present invention can be expressed as a Seebeck index. The Seebeck index (ZT) can be expressed as in Equation 1.

Here, α is the Seebeck coefficient [V/K], σ is the electrical conductivity [S/m], and α ² σ is the power factor (W/mK ² ). And, T is the temperature and k is the thermal conductivity [W/mK]. k can be expressed as a·c _p ·ρ, where a is the thermal diffusivity [cm ² /S], c _p is the specific heat [J/gK], and ρ is the density [g/cm ³ ].

In order to obtain the Seebeck exponent of the thermoelectric element, a Z value (V/K) may be measured using a Z meter, and the Seebeck exponent (ZT) may be calculated using the measured Z value.

According to another embodiment of the present invention, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have a structure shown in FIG. 4(b). Referring to FIG. 4(b) , the thermoelectric legs 130 and 140 include thermoelectric material layers 132 and 142 and first plating layers 134-1 and 144 stacked on one surface of the thermoelectric material layers 132 and 142. -1), the second plating layers 134-2 and 144-2 laminated on the other surface of the thermoelectric material layers 132 and 142 facing each other, the thermoelectric material layers 132 and 142 and the first plating layer First bonding layers 136-1 and 146-1 respectively disposed between 134-1 and 144-1 and between the thermoelectric material layers 132 and 142 and the second plating layers 134-2 and 144-2 and a first metal layer laminated on the second bonding layers 136-2 and 146-2, and the first plating layers 134-1 and 144-1 and the second plating layers 134-2 and 144-2, respectively ( 138-1 and 148-1) and second metal layers 138-2 and 148-2.

At this time, the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 directly contact each other, and the thermoelectric material layers 132 and 142 and the second bonding layers 136-2 and 146-1 2) can be in direct contact with each other. In addition, the first bonding layers 136-1 and 146-1 and the first plating layers 134-1 and 144-1 are in direct contact with each other, and the second bonding layers 136-2 and 146-2 and the second The plating layers 134-2 and 144-2 may directly contact each other. The first plating layers 134-1 and 144-1 and the first metal layers 138-1 and 148-1 are in direct contact with each other, and the second plating layers 134-2 and 144-2 and the second metal layer ( 138-2, 148-2) may be in direct contact with each other.

Here, the thermoelectric material layers 132 and 142 may include semiconductor materials such as bismuth (Bi) and tellurium (Te). The thermoelectric material layers 132 and 142 may have the same material or shape as the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 described in FIG. 13( a ).

In addition, the first metal layers 138-1 and 148-1 and the second metal layers 138-2 and 148-2 may be selected from copper (Cu), copper alloys, aluminum (Al), and aluminum alloys. to 0.5 mm, preferably 0.2 to 0.3 mm. Since the thermal expansion coefficients of the first metal layers 138-1 and 148-1 and the second metal layers 138-2 and 148-2 are similar to or greater than those of the thermoelectric material layers 132 and 142, during sintering Since compressive stress is applied at the interface between the first and second metal layers 138-1 and 148-1 and the second metal layers 138-2 and 148-2 and the thermoelectric material layers 132 and 142, cracking or peeling can be prevented. can In addition, since the bonding force between the first and second metal layers 138-1 and 148-1 and the second metal layers 138-2 and 148-2 and the electrodes 120 and 150 is high, the thermoelectric legs 130 and 140 may have electrodes ( 120, 150) and can be stably combined.

Next, the first plating layers 134-1 and 144-1 and the second plating layers 134-2 and 144-2 may include at least one of Ni, Sn, Ti, Fe, Sb, Cr, and Mo, respectively. and may have a thickness of 1 to 20 μm, preferably 1 to 10 μm. The first plating layers 134-1 and 144-1 and the second plating layers 134-2 and 144-2 include Bi or Te, which is a semiconductor material in the thermoelectric material layers 132 and 142, and the first metal layer 138-1, 148-1) and the second metal layers 138-2 and 148-2, it is possible to prevent performance deterioration of the thermoelectric element and prevent the first metal layers 138-1 and 148-1 and Oxidation of the two metal layers 138-2 and 148-2 can be prevented.

At this time, between the thermoelectric material layers 132 and 142 and the first plating layers 134-1 and 144-1 and between the thermoelectric material layers 132 and 142 and the second plating layers 134-2 and 144-2, the first Bonding layers 136-1 and 146-1 and second bonding layers 136-2 and 146-2 may be disposed. In this case, the first bonding layers 136-1 and 146-1 and the second bonding layers 136-2 and 146-2 may include Te. For example, the first bonding layers 136-1 and 146-1 and the second bonding layers 136-2 and 146-2 are Ni-Te, Sn-Te, Ti-Te, Fe-Te, Sb- It may include at least one of Te, Cr-Te, and Mo-Te. According to an embodiment of the present invention, the thickness of each of the first bonding layers 136-1 and 146-1 and the second bonding layers 136-2 and 146-2 is 0.5 to 100 μm, preferably 1 to 50 μm. μm. According to an embodiment of the present invention, the first plating layer including Te is between the thermoelectric material layers 132 and 142, the first plating layers 134-1 and 144-1, and the second plating layers 134-2 and 144-2. The bonding layers 136-1 and 146-1 and the second bonding layers 136-2 and 146-2 are disposed in advance so that Te in the thermoelectric material layers 132 and 142 is the first plating layer 134-1 and 144. -1) and diffusion into the second plating layers 134-2 and 144-2 can be prevented. Accordingly, the occurrence of the Bi-rich region can be prevented.

According to this, the Te content from the center of the thermoelectric material layers 132 and 142 to the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 is higher than the Bi content, and the thermoelectric material layer The Te content from the center of (132, 142) to the interface between the thermoelectric material layer (132, 142) and the second bonding layer (136-2, 146-2) is higher than the Bi content. Te content from the center of the thermoelectric material layer 132 or 142 to the interface between the thermoelectric material layer 132 or 142 and the first bonding layer 136-1 or 146-1 or the center of the thermoelectric material layer 132 or 142 The Te content from the to the interface between the thermoelectric material layers 132 and 142 and the second bonding layer 136-2 and 146-2 may be 0.8 to 1 times greater than the Te content of the central part of the thermoelectric material layer 132 and 142. . For example, the Te content within a thickness of 100 μm in the direction from the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 to the center of the thermoelectric material layers 132 and 142 is It may be 0.8 times to 1 time compared to the Te content of the center of the material layers 132 and 142 . Here, the Te content is maintained constant even within a thickness of 100 μm in the direction from the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 to the center of the thermoelectric material layers 132 and 142. It may be, for example, within a thickness of 100 μm in the direction from the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 to the center of the thermoelectric material layers 132 and 142. The rate of change of the Te weight ratio may be 0.9 to 1.

In addition, the Te content in the first bonding layer 136-1 or 146-1 or the second bonding layer 136-2 or 146-2 is the same as or similar to the Te content in the thermoelectric material layer 132 or 142. can do. For example, the Te content in the first bonding layers 136-1 and 146-1 or the second bonding layers 136-2 and 146-2 is 0.8 of the Te content in the thermoelectric material layers 132 and 142. to 1 time, preferably 0.85 to 1 time, more preferably 0.9 to 1 time, and more preferably 0.95 to 1 time. Here, the content may be a weight ratio. For example, when the content of Te in the thermoelectric material layers 132 and 142 is 50 wt%, the first bonding layers 136-1 and 146-1 or the second bonding layers 136-2 and 146-2 ) The content of Te in may be 40 to 50 wt%, preferably 42.5 to 50 wt%, more preferably 45 to 50 wt%, and more preferably 47.5 to 50 wt%. In addition, the content of Te in the first bonding layer 136-1 or 146-1 or the second bonding layer 136-2 or 146-2 may be greater than Ni. While the content of Te is uniformly distributed in the first bonding layer 136-1 or 146-1 or the second bonding layer 136-2 or 146-2, the Ni content of the first bonding layer 136-1 , 146-1) or the second bonding layer 136-2 or 146-2 may decrease as it approaches the direction of the thermoelectric material layer 132 or 142.

Further, the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or between the thermoelectric material layers 132 and 142 and the second bonding layers 136-2 and 146-2 The interface between the first plating layer 136-1 and 146-1 and the first bonding layer 136-1 and 146-1 or the second plating layer 134-2 and 144-2 and the second bonding layer 136 from the interface -2, 146-2) The Te content up to the interface can be uniformly distributed. For example, the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or the thermoelectric material layers 132 and 142 and the second bonding layers 136-2 and 146-2 ) from the interface between the first plating layer 136-1 and 146-1 and the first bonding layer 136-1 and 146-1 or the second plating layer 134-2 and 144-2 and the second bonding layer The rate of change of the Te weight ratio to the interface between (136-2, 146-2) may be 0.8 to 1. Here, as the rate of change of the Te weight ratio approaches 1, the interface between the thermoelectric material layers 132 and 142 and the first bonding layer 136-1 and 146-1 or the thermoelectric material layer 132 and 142 and the second bonding layer ( 136-2, 146-2) to the interface between the first plating layer 136-1, 146-1 and the first bonding layer 136-1, 146-1 or the second plating layer 134-2, 144- 2) and the Te content up to the interface between the second bonding layers 136-2 and 146-2 may be uniformly distributed.

In addition, the surfaces of the first bonding layers 136-1 and 146-1 in contact with the first plating layers 134-1 and 144-1, that is, the first plating layers 136-1 and 146-1 and the first bonding layer (136-1, 146-1) or a surface in contact with the second plating layer (134-2, 144-2) within the second bonding layer (136-2, 146-2), that is, the second plating layer (134-2) , 144-2) and the second bonding layer (136-2, 146-2), the Te content at the interface between the first bonding layer (136-1, 146-1) and Contact surfaces, that is, interfaces between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or the second bonding layers 136-2 and 146-2 within the thermoelectric material layers 132 and 142 ), that is, 0.8 to 1 times, preferably 0.85 to 1 times, the Te content at the interface between the thermoelectric material layers 132 and 142 and the second bonding layers 136-2 and 146-2. Preferably it may be 0.9 to 1 time, more preferably 0.95 to 1 time. Here, the content may be a weight ratio.

In addition, the Te content of the center of the thermoelectric material layers 132 and 142 is the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or the thermoelectric material layers 132 and 142 and It can be seen that the Te content of the interface between the second bonding layers 136-2 and 146-2 is the same as or similar to that of the Te content. That is, the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or between the thermoelectric material layers 132 and 142 and the second bonding layers 136-2 and 146-2. The Te content of the interface may be 0.8 to 1 times, preferably 0.85 to 1 times, more preferably 0.9 to 1 times, and still more preferably 0.95 to 1 times the Te content of the center of the thermoelectric material layer (132, 142). there is. Here, the content may be a weight ratio. Here, the center of the thermoelectric material layer 132 or 142 may mean a peripheral area including the center of the thermoelectric material layer 132 or 142 . Also, the boundary surface may refer to the boundary surface itself or to include the boundary surface and a region adjacent to the boundary surface within a predetermined distance from the boundary surface.

In addition, the content of Te in the first plating layer 136-1 or 146-1 or the second plating layer 134-2 or 144-2 is the content of Te in the thermoelectric material layer 132 or 142 and the first bonding layer ( 136-1 and 146-1) or the content of Te in the second bonding layer 136-2 and 146-2.

In addition, the Bi content of the central portion of the thermoelectric material layers 132 and 142 is the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 or the thermoelectric material layers 132 and 142. It can be seen that the Bi content of the interface between the second bonding layers 136-2 and 146-2 is identical to or similar to that of Bi content. Accordingly, the interface between the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 from the center of the thermoelectric material layers 132 and 142 or the thermoelectric material layers 132 and 142 and the second Since the content of Te appears higher than the content of Bi up to the interface between the bonding layers 136-2 and 146-2, the thermoelectric material layers 132 and 142 and the first bonding layers 136-1 and 146-1 There is no section in which the Bi content reverses the Te content around the interface between the thermoelectric material layers 132 and 142 and the second bonding layer 136-2 and 146-2. For example, the Bi content of the central portion of the thermoelectric material layer 132 or 142 is the interface between the thermoelectric material layer 132 or 142 and the first bonding layer 136-1 or 146-1 or the thermoelectric material layer 132 or 142 ) and the second bonding layer (136-2, 146-2) 0.8 to 1 times, preferably 0.85 to 1 times, more preferably 0.9 to 1 times, more preferably 0.95 to 1 times the Bi content of the interface between the second bonding layer (136-2, 146-2) it can be a boat Here, the content may be a weight ratio.

Here, the plurality of first electrodes 120 disposed between the first resin layer 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the second resin layer 160 and the P-type thermoelectric leg The plurality of second electrodes 150 disposed between the leg 130 and the N-type thermoelectric leg 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).

Also, the sizes of the first resin layer 110 and the second resin layer 160 may be formed differently. For example, the volume, thickness or area of one of the first resin layer 110 and the second resin layer 160 may be greater than that of the other. Accordingly, heat absorbing performance or heat dissipation performance of the thermoelectric element may be improved.

In this case, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal column shape, an elliptical column shape, or the like.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting the structures. Accordingly, it is possible to prevent material loss and improve electrical conductivity.

Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method. According to the zone melting method, after manufacturing an ingot using a thermoelectric material, heat is slowly applied to the ingot to rearrange the particles in a single direction, and the thermoelectric leg is slowly cooled. According to the powder sintering method, after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a powder for a thermoelectric leg, and a thermoelectric leg is obtained through a process of sintering the powder.

According to an embodiment of the present invention, the first resin layer 110 may be disposed on the first substrate 170 and the second substrate 180 may be disposed on the second resin layer 160 .

The first substrate 170 and the second substrate 180 may be made of aluminum, an aluminum alloy, copper, a copper alloy, or the like. When the first substrate 170 and the second substrate 180 are made of aluminum, an aluminum alloy, copper, or a copper alloy, the first substrate 170 and the second substrate 180 may include the first metal substrate 170 and It may also be referred to as the second metal substrate 180 . Alternatively, at least one of the first substrate 170 and the second substrate 180 may include a ceramic substrate. The first substrate 170 and the second substrate 180 include a first resin layer 110 , a plurality of first electrodes 120 , a plurality of P-type thermoelectric legs 130 and a plurality of N-type thermoelectric legs 140 . , a plurality of second electrodes 150, a second resin layer 160, and the like, and may be a region directly attached to an application to which the thermoelectric element 100 according to an embodiment of the present invention is applied. Accordingly, the first metal substrate 170 and the second metal substrate 180 may be mixed with the first metal support and the second metal support, respectively. When the first metal substrate 170 and the second metal substrate 180 are used according to an embodiment of the present invention, there is less possibility of cracking compared to a ceramic substrate, and thus durability can be improved and thermal conductivity performance This can be significantly higher.

The area of the first substrate 170 may be greater than that of the first resin layer 110 , and the area of the second substrate 180 may be greater than that of the second resin layer 160 . That is, the first resin layer 110 may be disposed in a region spaced apart from the edge of the first substrate 170 by a predetermined distance, and the second resin layer 160 may be disposed at a predetermined distance from the edge of the second substrate 180. It can be arranged in an area spaced apart by as much as

In this case, the width of the first substrate 170 may be greater than that of the second substrate 180 , or the thickness of the first substrate 170 may be greater than that of the second substrate 180 .

The first resin layer 110 and the second resin layer 160 may be made of an epoxy resin composition containing an epoxy resin and an inorganic filler, or may be made of a silicone resin composition containing polydimethylsiloxane (PDMS).

Here, the inorganic filler may be included in 68 to 88 vol% of the resin layer. If the inorganic filler is included in less than 68 vol%, the thermal conductivity may be low, and if the inorganic filler is included in more than 88 vol%, the adhesive force between the resin layer and the metal substrate may be lowered, and the resin layer may be easily broken.

The thickness of the first resin layer 110 and the second resin layer 160 may be 0.02 to 0.6 mm, preferably 0.1 to 0.6 mm, and more preferably 0.2 to 0.6 mm, and have thermal conductivity of 1 W/mK or more. , Preferably it may be 10 W / mK or more, more preferably 20 W / mK or more. When the thicknesses of the first resin layer 110 and the second resin layer 160 satisfy these numerical ranges, the first resin layer 110 and the second resin layer 160 repeat contraction and expansion according to temperature changes. However, bonding between the first resin layer 110 and the first substrate 170 and bonding between the second resin layer 160 and the second substrate 180 may not be affected.

To this end, the epoxy resin may include an epoxy compound and a curing agent. In this case, the curing agent may be included in a volume ratio of 1 to 10 based on 10 volume ratio of the epoxy compound. Here, the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound, and a silicone epoxy compound. The crystalline epoxy compound may include a mesogen structure. Mesogen is a basic unit of liquid crystal and has a rigid structure. And, the amorphous epoxy compound may be a normal amorphous epoxy compound having two or more epoxy groups in the molecule, and may be, for example, a glycidyl ether compound derived from bisphenol A or bisphenol F. Here, the curing agent may include at least one of an amine-based curing agent, a phenol-based curing agent, an acid anhydride-based curing agent, a polymercaptan-based curing agent, a polyaminoamide-based curing agent, an isocyanate-based curing agent, and a block isocyanate-based curing agent, and two or more types of curing agent may be used in combination.

The inorganic filler may include aluminum oxide and nitride, and the nitride may be included in 55 to 95 wt% of the inorganic filler, and more preferably 60 to 80 wt%. When nitride is included in this numerical range, thermal conductivity and bonding strength can be increased. Here, the nitride may include at least one of boron nitride and aluminum nitride. Here, the boron nitride may be a boron nitride agglomerate in which plate-shaped boron nitride is agglomerated, and the surface of the boron nitride agglomerate is coated with a polymer having the following unit 1, or at least a portion of the voids in the boron nitride agglomerate is a polymer having the following unit 1 can be charged by

Unit 1 is as follows.

[monomer 1]

Here, one of R ¹ , R ² , R ³ and R ⁴ is H, the other is selected from the group consisting of C ₁ ~ C ₃ alkyl, C ₂ ~ C ₃ alkene and C ₂ ~ C ₃ alkyne, and R ⁵ may be a linear, branched or cyclic divalent organic linker having 1 to 12 carbon atoms.

In one embodiment, one of R ¹ , R ² , R ³ and R ⁴ excluding H is selected from C ₂ ~ C ₃ alkenes, and the other one and another one of the others are selected from C ₁ ~ C ₃ alkyl. can be chosen For example, the polymer according to an embodiment of the present invention may include the following unit 2.

[monomer 2]

Alternatively, the rest of R ¹ , R ² , R ³ and R ⁴ excluding H may be selected to be different from each other in the group consisting of C ₁ ~ C ₃ alkyl, C ₂ ~ C ₃ alkene and C ₂ ~ C ₃ alkyne. there is.

In this way, when the polymer according to unit 1 or unit 2 is coated on the boron nitride agglomerate in which plate-shaped boron nitride is agglomerated, and filling at least a part of the voids in the boron nitride agglomerate, the air layer in the boron nitride agglomerate is minimized, thereby forming the boron nitride agglomerate. It is possible to increase thermal conductivity, and it is possible to prevent breakage of the boron nitride agglomerate by increasing the bonding force between plate-shaped boron nitride. In addition, when a coating layer is formed on the boron nitride agglomerate in which plate-shaped boron nitride is agglomerated, it becomes easy to form a functional group, and when a functional group is formed on the coating layer of the boron nitride agglomerate, affinity with the resin may be increased.

In this case, the particle size D50 of the boron nitride agglomerate may be 250 to 350 μm, and the particle size D50 of the aluminum oxide may be 10 to 30 μm. When the particle size D50 of the boron nitride agglomerate and the particle size D50 of the aluminum oxide satisfy these numerical ranges, the boron nitride agglomerate and the aluminum oxide can be evenly dispersed in the resin layer, thereby providing an even heat conduction effect and adhesive performance throughout the resin layer. can have

As such, when the first resin layer 110 is disposed between the first substrate 170 and the plurality of first electrodes 120, heat transfer between the first substrate 170 and the plurality of first electrodes 120 is reduced. It is possible, and a separate adhesive or physical fastening means is not required due to the adhesive performance of the first resin layer 110 itself. Accordingly, the overall size of the thermoelectric element 100 can be reduced and durability of the thermoelectric element 100 can be increased.

Meanwhile, the thermoelectric element 100 according to an embodiment of the present invention further includes a sealing part 190 .

The sealing part 190 may be disposed on the side surface of the first resin layer 110 and the side surface of the second resin layer 160, that is, the sealing part 190 may be disposed between the first metal substrate 170 and the second metal Disposed between the substrates 180, the side surface of the first resin layer 110, the outermost periphery of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 It may be arranged to surround the outermost outermost of the plurality of second electrodes 150 and the side surfaces of the second resin layer 160 . Accordingly, the first resin layer 110, the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, the plurality of N-type thermoelectric legs 140, the plurality of second electrodes 150, and the 2 The resin layer can be sealed from external moisture, heat, contamination, etc.

Here, the sealing part 190 is the side surface of the first resin layer 110, the outermost periphery of the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130, and the plurality of N-type thermoelectric legs 140. A sealing case 192, the sealing case 192, and the second metal substrate 180 disposed at a predetermined distance from the outermost outermost periphery of the plurality of second electrodes 150 and the side surface of the second resin layer 160 A sealing material 194 disposed between the sealing case 192 and the first metal substrate 170 may be included. As such, the sealing case 192 may contact the first metal substrate 170 and the second metal substrate 180 via the sealing material 194 . Accordingly, when the sealing case 192 directly contacts the first metal substrate 170 and the second metal substrate 180, heat conduction occurs through the sealing case 192, and as a result, ΔT is lowered. It can be prevented.

Meanwhile, a guide groove G for drawing out the wires 200 and 202 connected to the electrodes may be formed in the sealing case 192 . To this end, the sealing case 192 may be an injection molded product made of plastic or the like, and may be mixed with the sealing cover.

Although the structure of the sealing unit 190 is shown in detail, this is only an example, and the sealing unit 190 may be modified in various forms.

Although not shown, a heat insulating material may be further included to surround the sealing portion 190 . Alternatively, the sealing part 190 may include a heat insulating component.

According to an embodiment of the present invention, the wire 200 is connected to one of the plurality of first electrodes 120, the wire 202 is connected to the other one of the plurality of first electrodes 120, , Power is supplied to the thermoelectric element 100 through the wires 200 and 202.

In general, a first substrate 170, a first resin layer 110, a plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130, a plurality of N-type thermoelectric legs 140, a plurality of first electrodes 120, After sequentially stacking and assembling the two electrodes 150, the second resin layer 160, and the second substrate 180, connecting the wire 200 to one of the plurality of first electrodes 120, A wire 202 is connected to another one of the plurality of first electrodes 120 .

At this time, since the space between the first substrate 170 and the second substrate 180 is narrow, it is not easy to precisely connect the wires 200 and 202 to the electrodes. Accordingly, the wires 200 and 202 and the electrodes A problem in which the inter-solder is separated by cold soldering or the like may occur.

In the embodiment of the present invention, the workability of the connection between the wires 200 and 202 and the electrodes is improved by changing the structure of the second substrate 180 .

5 to 8 , the area of the second substrate 180 may be smaller than that of the first substrate 170, and at least one chamfer 500 may be formed on the second substrate 180. can Here, the chamfer 500 may refer to a shape in which an edge or side surface of a substrate is cut, and may be used interchangeably with a chamfer, a chamfer, a cutting portion, a deletion portion, and the like.

At least one chamfer 500 is formed on at least one of one first electrode 122 to which one wire 200 is connected and another first electrode 124 to which another wire 202 is connected. can

For example, as shown in FIGS. 5 to 7, at least one chamfer 500 is a first chamfer formed on one electrode 122 to which one wire 200 is connected in the second substrate 180. 510 and the second chamfer 520 formed on the other electrode 124 to which the other wire 202 is connected. At this time, since one electrode 122 to which one wire 200 is connected and another electrode 124 to which another wire 202 is connected are spaced apart from both ends of the first substrate 170, the first The chamfer 510 may be formed on one end of one surface of the second substrate 180 , and the second chamfer 520 may be formed on the other end of the one surface of the second substrate 180 .

Alternatively, one electrode 122 to which one wire 200 is connected and another electrode 124 to which another wire 202 is connected may be disposed adjacent to each other according to the electrode arrangement structure. In this case, as shown in FIG. 8 , one chamfer 530 may be formed in a central region of one surface of the second substrate 180 .

When the chamfer 500 is formed on the second substrate 180 as described above, since at least a portion of the first electrodes 122 and 124 at a position where the wires 200 and 202 are connected is exposed, the wires 200 and 202 Workability of the connection between the first electrodes 122 and 124 can be remarkably improved.

At this time, as shown in the enlarged view of FIG. 5 , a portion of the first electrode 124 may be exposed due to the chamfer 520 . For example, as shown in FIG. 5(b), the first electrode 124 has a rectangular shape, the length of the short side is a, the length of the long side is b, and the wires 200 and 202 are parallel to the long side. When connected in the direction, the chamfer 520 has a width (W) of 0.8a to 1.2a in the direction of the short side, preferably 0.9a to 1.1a, more preferably 0.95a to 1.05a in the direction of the short side , It may be formed to have a height (H) of 0.4b to b, preferably 0.5b to 0.9b, more preferably 0.6b to 0.8b in the direction of the long side. If the size of the chamfer 520 is smaller than this numerical range, the workability between the wire and the electrode may be lowered, and if it is larger than this numerical range, not only the electrode to which the wire is connected but also other neighboring electrodes may be exposed, making sealing difficult. .

Meanwhile, the chamfer 500 may be formed to include at least one of a straight portion and a curved portion. For example, as shown in FIG. 5, the chamfer 520 is a first straight portion 522 disposed in the first direction, that is, the long side direction of the first electrode 124, the short side of the first electrode 124 It may be formed to include a second straight portion 524 disposed in the direction, and a curved portion 526 disposed between the first straight portion 522 and the second straight portion 524 . Alternatively, as shown in FIG. 6, the chamfer 500 may be formed to include two straight parts. Alternatively, as shown in FIG. 7 , the chamfer 500 may be formed to include only curved portions.

As shown in FIG. 5 of these embodiments, the chamfer 520 is a first straight portion 522 disposed in the first direction, that is, the long side direction of the first electrode 124, the short side of the first electrode 124 When formed to include a second straight portion 524 disposed in the direction and a curved portion 526 disposed between the first straight portion 522 and the second straight portion 524, the first electrode 124 It is possible to increase the workability of the connection between the wire and the electrode while minimizing the exposure, and the process of forming the chamfer may be easy.

In this case, the chamfer 500 may be formed by a process of cutting the second substrate 180 having a square shape prepared in advance. Alternatively, the second substrate 180 may be molded into a shape in which the chamfer 500 is formed.

Meanwhile, as described above, the thermoelectric module according to an embodiment of the present invention may further include a sealing portion 190 . In this case, for sealing between the first metal substrate 170 and the second metal substrate 180 , the sealing part 190 may be disposed to fill the chamfer 500 formed in the second metal substrate 180 .

For example, as shown in FIGS. 2 and 3 , the sealing unit 190 may include a sealing case 192 and a sealing material 194 . The sealing case 192 is a side surface of the thermoelectric element 100 on one surface of the first metal substrate 170, for example, the first resin layer 110, the plurality of first electrodes 120, and the plurality of P-type thermoelectric elements. Side surfaces of the leg 130, the plurality of N-type thermoelectric legs 140, the plurality of second electrodes 150, and the second resin layer 160 are spaced apart from the side surface of the second metal substrate 180, and the thermoelectric element ( 100), for example, a first resin layer 110, a plurality of first electrodes 120, a plurality of P-type thermoelectric legs 130 and a plurality of N-type thermoelectric legs 140, a plurality of second electrodes 150 and the side surfaces of the second resin layer 160 and the side surface of the second metal substrate 180 are disposed. To this end, the sealing case 192 includes the first resin layer 110, the plurality of first electrodes 120, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140, and the plurality of second electrodes 120. It may have a frame shape accommodating at least a portion of the electrode 150, the second resin layer 160, and the second metal substrate 180.

As shown in FIG. 3 , a through hole G through which the wires 200 and 202 connected to the electrodes pass may be formed in the sealing case 192 . To this end, the sealing case 192 may be an injection molded product made of plastic or the like, and may be mixed with a sealing support or a sealing cover. Here, although the sealing case 192 is illustrated as having a rectangular shape, it is not limited thereto, and the sealing case 192 may be variously deformed into a polygonal shape or a circular shape.

Also, the sealing material 194 may be disposed between the first metal substrate 170 and the sealing case 192 and between the second metal substrate 180 and the sealing case 192, and may be disposed between the first metal substrate 170 and the sealing case 192. It may serve to seal between the sealing cases 192 and between the second metal substrate 180 and the sealing case 192 . The sealing material 194 may include at least one of an epoxy resin and a silicone resin, and may be mixed with a finishing material, a finishing layer, a waterproofing material, or a waterproofing layer.

According to an embodiment of the present invention, the sealing case 192 may further include a protrusion 600 corresponding to the shape of the chamfer 500 of the second substrate 180 . The shape of the protrusion 600 corresponds to the shape of the chamfer 500 formed on the second substrate 180, but the spaced space between the protrusion 600 and the chamfer 600 may be further filled with a sealing material 194. When the sealing case 192 further includes the protrusion 600 corresponding to the shape of the chamfer 500, between the sealing case 192 and the second metal substrate 180 and between the sealing case 192 and the first metal substrate Since the amount of the sealing material disposed between the portions 170 may be reduced, the thermoelectric module may be more stably sealed.

Hereinafter, an example in which the thermoelectric module according to an embodiment of the present invention is applied to a water purifier will be described with reference to FIG. 9 .

9 is a block diagram of a water purifier to which a thermoelectric module according to an embodiment of the present invention is applied.

The water purifier 1 to which the thermoelectric module according to the embodiment of the present invention is applied includes a raw water supply pipe 12a, a purified water tank inlet pipe 12b, a purified water tank 12, a filter assembly 13, a cooling fan 14, a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric module 1000.

The raw water supply pipe 12a is a supply pipe that introduces water to be purified from a water source into the filter assembly 13, and the purified water tank inlet pipe 12b introduces purified water from the filter assembly 13 into the purified water tank 12. The cold water supply pipe 15a is a supply pipe through which cold water cooled to a predetermined temperature by the thermoelectric module 1000 in the purified water tank 12 is finally supplied to the user.

The purified water tank 12 temporarily receives the purified water so as to store and supply water purified through the filter assembly 13 and introduced through the purified water tank inlet pipe 12b.

The filter assembly 13 is composed of a precipitate filter 13a, a pre-carbon filter 13b, a membrane filter 13c, and a post-carbon filter 13d.

That is, water flowing into the raw water supply pipe 12a may be purified by passing through the filter assembly 13 .

The heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric module 1000 to store cold air generated in the thermoelectric module 1000 . Cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water accommodated in the purified water tank 120 .

The heat storage tank 15 may be in surface contact with the purified water tank 12 so that cold air can be smoothly transferred.

As described above, the thermoelectric module 1000 has a heat absorbing surface and a heating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.

Here, one side may be the purified water tank 12 side, and the other side may be the opposite side of the purified water tank 12 .

In addition, as described above, the thermoelectric module 1000 has excellent waterproof and dustproof performance and improved heat flow performance, so that the purified water tank 12 can be efficiently cooled in the water purifier.

Hereinafter, an example in which the thermoelectric module according to an embodiment of the present invention is applied to a refrigerator will be described with reference to FIG. 10 .

10 is a block diagram of a refrigerator to which a thermoelectric module according to an embodiment of the present invention is applied.

The refrigerator includes a simon evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric module 1000 in a simon evaporation chamber.

The refrigerator is partitioned into a simon storage chamber and a simon evaporation chamber by the simon evaporation chamber cover 23.

In detail, the inner space corresponding to the front of the simon evaporation chamber cover 23 is defined as the simon storage chamber, and the inner space corresponding to the rear of the simon evaporation chamber cover 23 may be defined as the simon evaporation chamber.

The front surface of the simon evaporation chamber cover 23 may be formed with a discharge grill (23a) and a suction grill (23b), respectively.

The evaporation chamber partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet, and partitions a space where the deep greenhouse storage system is placed and a space where the main evaporator 25 is placed.

Cool air cooled by the main evaporator 25 is supplied to the freezing compartment and then returned to the main evaporator.

The thermoelectric module 1000 is accommodated in the Simon evaporation chamber, and has a structure in which a heat absorbing surface faces the drawer assembly of the Simon storage chamber and a heating surface faces the evaporator. Therefore, it can be used to quickly cool food stored in the drawer assembly to an ultra-low temperature state of minus 50 degrees Celsius or less by using the endothermic phenomenon generated by the thermoelectric module 1000 .

In addition, as described above, the thermoelectric module 1000 has excellent waterproof and dustproof performance and improved heat flow performance, so that the drawer assembly can be efficiently cooled in the refrigerator.

The thermoelectric element according to the embodiment of the present invention may act on a device for power generation, a device for cooling, a device for heating, and the like. Specifically, the thermoelectric element according to the embodiment of the present invention is mainly used in optical communication modules, sensors, medical devices, measuring devices, aerospace industry, refrigerators, chillers, automobile ventilation seats, cup holders, washing machines, dryers, and wine cellars. , a water purifier, a sensor power supply, a thermopile, and the like. Alternatively, the thermoelectric element according to an embodiment of the present invention may be applied to a power generation device that generates electricity using waste heat generated from an engine of a vehicle or ship.

Here, as an example of applying the thermoelectric element according to the embodiment of the present invention to a medical device, there is a polymerase chain reaction (PCR) device. A PCR device is a device for amplifying DNA to determine a nucleotide sequence of DNA, and requires precise temperature control and a thermal cycle. To this end, a Peltier-based thermoelectric element may be applied.

Another example of applying the thermoelectric element according to the embodiment of the present invention to a medical device is an optical detector. Here, the photodetector includes an infrared/ultraviolet ray detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like. A Peltier-based thermoelectric element may be applied to cool the photodetector. Accordingly, it is possible to prevent a change in wavelength, a decrease in output, and a decrease in resolution due to an increase in temperature inside the photodetector.

As another example of application of the thermoelectric element according to the embodiment of the present invention to medical devices, the field of immunoassay, the field of in vitro diagnostics, the field of temperature control and cooling (general temperature control and cooling systems), There are physical therapy fields, liquid chiller systems, and blood/plasma temperature control fields. Accordingly, precise temperature control is possible.

Another example of applying the thermoelectric element according to the embodiment of the present invention to a medical device is an artificial heart. Accordingly, power can be supplied to the artificial heart.

As an example of application of the thermoelectric element according to the embodiment of the present invention to the aerospace industry, there are a star tracking system, a thermal imaging camera, an infrared/ultraviolet ray detector, a CCD sensor, a Hubble Space Telescope, and a TTRS. Accordingly, the temperature of the image sensor may be maintained.

Another example of the thermoelectric element according to the embodiment of the present invention applied to the aerospace industry includes a cooling device, a heater, and a power generating device.

In addition to this, the thermoelectric element according to the embodiment of the present invention can be applied to other industrial fields for power generation, cooling, and heating.

Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art will variously modify and change the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. You will understand that it can be done.

Claims (8)

a first substrate;
A thermoelectric element disposed on the first substrate;
A second substrate disposed on the thermoelectric element and having a smaller area than the first substrate; and
A wire portion connected to the thermoelectric element and supplying power to the thermoelectric element;
The thermoelectric module wherein at least one chamfer is formed on the second substrate. According to claim 1,
The thermoelectric element includes a first resin layer disposed on the first substrate, a plurality of first electrodes disposed on the first resin layer, a plurality of P-type thermoelectric legs disposed on the plurality of first electrodes, and a plurality of first electrodes disposed on the first resin layer. A plurality of second electrodes disposed on N-type thermoelectric legs, the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and a second resin layer disposed on the plurality of second electrodes,
The thermoelectric module includes a first wire connected to one of the plurality of first electrodes and a second wire connected to another one of the plurality of first electrodes. According to claim 2,
The thermoelectric module of claim 1 , wherein the at least one chamfer is formed on at least one of the one electrode to which the first wire is connected and the other electrode to which the second wire is connected. According to claim 3,
The at least one chamfer includes a first chamfer formed on the one electrode to which the first wire is connected and a second chamfer formed on the other electrode to which the second wire is connected. According to claim 4,
The first chamfer is formed on one end of one surface of the second substrate, and the second chamfer is formed on the other end of the one surface of the second substrate. According to claim 4,
At least one of the first chamfer and the second chamfer includes at least one of a straight portion and a curved portion. According to claim 6,
At least one of the first chamfer and the second chamfer includes a first straight line part disposed in a first direction, a second straight line part formed in a direction perpendicular to the first direction, and the first straight part and the second straight line part A thermoelectric module including a curved part disposed between the parts. According to claim 1,
Further comprising a sealing portion surrounding a side surface of the thermoelectric element,
The thermoelectric module of claim 1 , wherein the sealing part is disposed to fill at least one chamfer formed in the second substrate.

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