KR20190072981A - Chemical mechanical polishing slurry composition of wafer contaning poly-silicon - Google Patents
Chemical mechanical polishing slurry composition of wafer contaning poly-silicon Download PDFInfo
- Publication number
- KR20190072981A KR20190072981A KR1020170174181A KR20170174181A KR20190072981A KR 20190072981 A KR20190072981 A KR 20190072981A KR 1020170174181 A KR1020170174181 A KR 1020170174181A KR 20170174181 A KR20170174181 A KR 20170174181A KR 20190072981 A KR20190072981 A KR 20190072981A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- polycrystalline silicon
- polishing
- slurry composition
- group
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 115
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 87
- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 239000002002 slurry Substances 0.000 title claims abstract description 55
- 239000000126 substance Substances 0.000 title claims description 12
- 239000002245 particle Substances 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 51
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 32
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 23
- 239000006061 abrasive grain Substances 0.000 claims description 22
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 20
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 20
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 19
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 18
- -1 amine compound Chemical class 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- 239000011976 maleic acid Substances 0.000 claims description 18
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 16
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 12
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 10
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 10
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 239000003607 modifier Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 8
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 239000001361 adipic acid Substances 0.000 claims description 8
- 235000011037 adipic acid Nutrition 0.000 claims description 8
- 239000004310 lactic acid Substances 0.000 claims description 8
- 235000014655 lactic acid Nutrition 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- 235000011054 acetic acid Nutrition 0.000 claims description 7
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 7
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 7
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 claims description 6
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 6
- 235000015165 citric acid Nutrition 0.000 claims description 6
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 6
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 claims description 6
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 239000003002 pH adjusting agent Substances 0.000 claims description 5
- WTTWSMJHJFNCQB-UHFFFAOYSA-N 2-(dibenzylamino)ethanol Chemical compound C=1C=CC=CC=1CN(CCO)CC1=CC=CC=C1 WTTWSMJHJFNCQB-UHFFFAOYSA-N 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 239000001530 fumaric acid Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- KFDIDIIKNMZLRZ-UHFFFAOYSA-N n'-propan-2-ylpropane-1,3-diamine Chemical compound CC(C)NCCCN KFDIDIIKNMZLRZ-UHFFFAOYSA-N 0.000 claims description 4
- MXHTZQSKTCCMFG-UHFFFAOYSA-N n,n-dibenzyl-1-phenylmethanamine Chemical compound C=1C=CC=CC=1CN(CC=1C=CC=CC=1)CC1=CC=CC=C1 MXHTZQSKTCCMFG-UHFFFAOYSA-N 0.000 claims description 4
- AGVKXDPPPSLISR-UHFFFAOYSA-N n-ethylcyclohexanamine Chemical compound CCNC1CCCCC1 AGVKXDPPPSLISR-UHFFFAOYSA-N 0.000 claims description 4
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- KKSNTCYLMGYFFB-UHFFFAOYSA-N (prop-2-enoylamino)methanesulfonic acid Chemical compound OS(=O)(=O)CNC(=O)C=C KKSNTCYLMGYFFB-UHFFFAOYSA-N 0.000 claims description 3
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 claims description 3
- LDMOEFOXLIZJOW-UHFFFAOYSA-N 1-dodecanesulfonic acid Chemical compound CCCCCCCCCCCCS(O)(=O)=O LDMOEFOXLIZJOW-UHFFFAOYSA-N 0.000 claims description 3
- QBDAFARLDLCWAT-UHFFFAOYSA-N 2,3-dihydropyran-6-one Chemical compound O=C1OCCC=C1 QBDAFARLDLCWAT-UHFFFAOYSA-N 0.000 claims description 3
- OZICRFXCUVKDRG-UHFFFAOYSA-N 2-[2-hydroxyethyl(propyl)amino]ethanol Chemical compound CCCN(CCO)CCO OZICRFXCUVKDRG-UHFFFAOYSA-N 0.000 claims description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 3
- KDRUIMNNZBMLJR-UHFFFAOYSA-N 2-isopropylaminoethylamine Chemical compound CC(C)NCCN KDRUIMNNZBMLJR-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- BHHGXPLMPWCGHP-UHFFFAOYSA-N Phenethylamine Chemical compound NCCC1=CC=CC=C1 BHHGXPLMPWCGHP-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- YOUBLKPZGAHMAH-UHFFFAOYSA-N azane;butan-2-ol Chemical compound N.CCC(C)O YOUBLKPZGAHMAH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 claims description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 claims description 3
- 235000010233 benzoic acid Nutrition 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 3
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 claims description 3
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 3
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 3
- CJMZLCRLBNZJQR-UHFFFAOYSA-N ethyl 2-amino-4-(4-fluorophenyl)thiophene-3-carboxylate Chemical compound CCOC(=O)C1=C(N)SC=C1C1=CC=C(F)C=C1 CJMZLCRLBNZJQR-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- DOSWHECVUKBMCG-UHFFFAOYSA-N n'-phenylpropane-1,3-diamine Chemical compound NCCCNC1=CC=CC=C1 DOSWHECVUKBMCG-UHFFFAOYSA-N 0.000 claims description 3
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 claims description 3
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- 229960004889 salicylic acid Drugs 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 125000001174 sulfone group Chemical group 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 claims description 3
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 3
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 3
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N 2-propanol Substances CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 2
- WGTASENVNYJZBK-UHFFFAOYSA-N 3,4,5-trimethoxyamphetamine Chemical compound COC1=CC(CC(C)N)=CC(OC)=C1OC WGTASENVNYJZBK-UHFFFAOYSA-N 0.000 claims description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- FEGKXZFSOCPQJH-UHFFFAOYSA-N n-methoxy-2-phenylethanamine Chemical compound CONCCC1=CC=CC=C1 FEGKXZFSOCPQJH-UHFFFAOYSA-N 0.000 claims description 2
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims 4
- SUZOCIFIGKCISE-UHFFFAOYSA-N 1-(dimethylamino)propan-1-ol Chemical compound CCC(O)N(C)C SUZOCIFIGKCISE-UHFFFAOYSA-N 0.000 claims 1
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- AOHAPDDBNAPPIN-UHFFFAOYSA-N 3-Methoxy-4,5-methylenedioxybenzoic acid Chemical compound COC1=CC(C(O)=O)=CC2=C1OCO2 AOHAPDDBNAPPIN-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 2
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 2
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- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- UQUPIHHYKUEXQD-UHFFFAOYSA-N n,n′-dimethyl-1,3-propanediamine Chemical compound CNCCCNC UQUPIHHYKUEXQD-UHFFFAOYSA-N 0.000 description 2
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- QISOBCMNUJQOJU-UHFFFAOYSA-N 4-bromo-1h-pyrazole-5-carboxylic acid Chemical compound OC(=O)C=1NN=CC=1Br QISOBCMNUJQOJU-UHFFFAOYSA-N 0.000 description 1
- PBRXWVWVEZDPSE-UHFFFAOYSA-N 4-ethylhexan-1-amine Chemical compound CCC(CC)CCCN PBRXWVWVEZDPSE-UHFFFAOYSA-N 0.000 description 1
- DCBLTYZAUIEBCX-UHFFFAOYSA-N 4-methylpentane-1,3-diol Chemical compound CC(C)C(O)CCO DCBLTYZAUIEBCX-UHFFFAOYSA-N 0.000 description 1
- UQRAZAKBJFHRAY-UHFFFAOYSA-N C(CCN)N.C(C)O.C(C)O.C(C)O Chemical compound C(CCN)N.C(C)O.C(C)O.C(C)O UQRAZAKBJFHRAY-UHFFFAOYSA-N 0.000 description 1
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- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- ZNZJJSYHZBXQSM-UHFFFAOYSA-N propane-2,2-diamine Chemical compound CC(C)(N)N ZNZJJSYHZBXQSM-UHFFFAOYSA-N 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
- 229960004274 stearic acid Drugs 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
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- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물에 관한 것이다.The present invention relates to a polishing slurry composition for wafers containing polycrystalline silicon.
반도체 소자가 다양해지고 고집적화됨에 따라 더욱 미세한 패턴 형성 기술이 사용되고 있으며, 그에 따라 반도체 소자의 표면 구조가 더욱 복잡해지고 표면 막들의 단차도 더욱 커지고 있다. 반도체 소자를 제조하는 데 있어서 웨이퍼 상에 형성된 특정한 막에서의 단차를 제거하기 위한 평탄화 기술로서 CMP(chemical mechanical polishing) 공정이 이용된다. CMP 조성물은 한 유형의 집적 회로 성분을 또 다른 성분에 대해 제거하는데 있어서 선택적이다. 웨이퍼 표면의 CMP를 위한 조성물 및 방법은 관련 기술분야에 널리 공지되어 있다. 반도체 웨이퍼 표면의 연마를 위한 CMP 슬러리 조성물은 전형적으로 연마입자, 다양한 첨가 화합물 등을 포함한다. 3차원 트랜지스터 적층을 갖는 플래시 메모리 장치 (3D 플래시 메모리)가 점점 더 인기있다. 3D 플래시 응용을 위한 연마 슬러리는 일반적으로 다결정실리콘의 연마율, 산화실리콘의 연마선택비, 뿐만 아니라 양호한 표면 토포그래피 및 낮은 결함 수준 등을 제공해야한다. As the semiconductor devices are diversified and highly integrated, a finer pattern forming technique is used, thereby complicating the surface structure of the semiconductor device and increasing the step difference of the surface films. A chemical mechanical polishing (CMP) process is used as a planarization technique for removing a step in a specific film formed on a wafer in manufacturing a semiconductor device. The CMP composition is optional in removing one type of integrated circuit component for another component. Compositions and methods for CMP on wafer surfaces are well known in the relevant art. CMP slurry compositions for polishing semiconductor wafer surfaces typically include abrasive particles, various additive compounds, and the like. Flash memory devices (3D flash memory) with three-dimensional transistor stacks are becoming increasingly popular. Polishing slurries for 3D flash applications should generally provide a polishing rate of polycrystalline silicon, a polishing selectivity of silicon oxide, as well as good surface topography and low defect levels.
본 발명은 상술한 문제점을 해결하기 위한 것으로, 본 발명의 목적은, 다결정 실리콘의 초기 연마율이 개선된, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 제공하는 것이다.An object of the present invention is to provide a polishing slurry composition for a wafer containing polycrystalline silicon, wherein the initial polishing rate of the polycrystalline silicon is improved.
그러나, 본 발명이 해결하고자 하는 과제는 이상에서 언급한 과제로 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 통상의 기술자에게 명확하게 이해될 수 있을 것이다.However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
본 발명의 하나의 양상은, According to one aspect of the present invention,
연마입자; 다결정실리콘 연마조절제; 다결정실리콘 표면개선제; 및 유기술폰산계 화합물을 포함하는 산화물 연마조절제; 를 포함하는, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물에 관한 것일 수 있다. Abrasive particles; Polycrystalline silicon polishing modifiers; Polycrystalline silicon surface modifiers; An oxide polishing regulator including an organic sulfonic acid-based compound; Wherein the polishing slurry composition is a polishing slurry composition of a wafer containing polycrystalline silicon.
본 발명의 일 실시예에 따라, 상기 다결정실리콘 연마조절제는, 아민계 화합물을 포함할 수 있다. According to an embodiment of the present invention, the polycrystalline silicon polishing agent may include an amine compound.
본 발명의 일 실시예에 따라, 상기 아민계 화합물은, 프로필아민, 부틸아민, 디에틸아민, 디프로필아민, 디부틸아민, 트리에틸아민, 트리부틸아민, 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 에틸렌트리아민, 디에틸렌트리아민, 부틸렌디아민, 펜타메틸렌디아민, 헥사메틸렌디아민, 비스(3-아미노프로필)아민, N-이소프로필에틸렌디아민, N-이소프로필-1,3-프로판디아민, 테트라에틸렌펜타아민, N,N'-디메틸-1,3-프로판디아민, 1-디메틸아미노-2-프로필아민, 2,2-디메틸-1,3-프로판디아민, N,N-디메틸-1,3-프로판디아민, N,N,N,N-테트라메틸에틸렌디아민, 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에틴올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민 페닐에틸아민(Phenylethylamine), 펜에틸아민(Phenethylamine), 메톡시펜에틸아민(Methoxyphenethylamine), 아미노프로필아닐린(Aminopropylaniline) 벤질아민(Bebzylamine), 디벤질아민(Dibenzylamine), N-메틸벤질아민(N-Methylbenzylamine), 디메틸벤질아민(Dimethylbenzylamine), 4-벤질피페리딘(4-Benzylpiperidine), 디벤질에탄올아민(Dibenzylethanolamine), 트리벤질아민(Tribenzylamine), 및 에틸사이클로헥실아민(Ethylcyclohexylamine)으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. According to one embodiment of the present invention, the amine compound is at least one selected from the group consisting of propylamine, butylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanol Aminopropylamine, N-isopropylethylenediamine, N-isopropyl-1,3-propanediamine, N-isopropyl-1,3-propanediamine, diisopropylethylamine, diethylenetriamine, diethylenetriamine, butylenediamine, pentamethylenediamine, hexamethylenediamine, , Tetraethylene pentaamine, N, N'-dimethyl-1,3-propanediamine, 1-dimethylamino-2-propylamine, 2,2- Propanediamine, N, N, N, N-tetramethylethylenediamine, 1,5-diamino-3-pentanol, 2-dimethylamino- Propanol, 1-dimethylamino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino- , 2-ethylamino-1-ethanol, 1- (dimethylamino) -2-propanol , N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt- 2-ethylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2- Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] , 2-amino-2-methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine, phenylethylamine, phenethylamine methoxyphenethylamine, aminopropylaniline, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzylamine, 4-ethylhexylamine, And may include at least one member selected from the group consisting of 4-benzylpiperidine, dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine.
본 발명의 일 실시예에 따라, 상기 다결정실리콘 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 10 중량%일 수 있다. According to one embodiment of the present invention, the polycrystalline silicon polishing modifier may be 0.001 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
본 발명의 일 실시예에 따라, 상기 다결정실리콘 표면개선제는, 유기산, 무기산 또는 이 둘을 포함하고, 상기 유기산은, 시트르산, 말산, 말레산, 말론산, 옥살산, 숙신산, 락트산, 타르타르산, 아디프산, 피멜산, 수베르산, 아젤라산, 세바크산, 말레산, 푸마르산, 아세트산, 부티르산, 카프르산, 카프로산, 카프릴산, 글루타르산, 글리콜산, 포름산, 라우르산, 미리스트산, 팔미트산, 프탈산, 프로피온산, 피루브산, 스테아르산 및 발레르산으로 이루어진 군에서 선택된 1종 이상을 포함하고, 상기 무기산은, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산 및 과염소산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. According to an embodiment of the present invention, the polysilicon surface improver comprises an organic acid, an inorganic acid, or both, and the organic acid is at least one selected from the group consisting of citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, But are not limited to, acetic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, And at least one member selected from the group consisting of lauric acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid, wherein the inorganic acid is at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, Acid, hydrochloric acid, and perchloric acid.
본 발명의 일 실시예에 따라, 상기 다결정실리콘 표면개선제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 2 중량%인 것일 수 있다. According to one embodiment of the present invention, the polycrystalline silicon surface improver may be 0.001 wt% to 2 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
본 발명의 일 실시예에 따라, 산성 물질, 염기성 물질 또는 이 둘을 포함하는 pH 조절제;를 더 포함하고, 상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하고, 상기 염기성 물질은, 암모니아, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. According to an embodiment of the present invention, there is provided a process for the production of an acidic substance, which comprises the steps of: (a) adding an acidic substance, a basic substance or both, , Malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, Wherein the basic substance is selected from the group consisting of ammonia, ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (hereinafter abbreviated as " tetramethyl ammonium hydroxide "), at least one selected from the group consisting of lactic acid, aspartic acid, ; TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogencarbonate, sodium carbonate, imidazole and salts thereof It may include at least one selected from the group consisting of.
본 발명의 일 실시예에 따라, 상기 연마입자는, 금속산화물, 유기물 또는 무기물로 코팅된 금속산화물, 및 콜로이달 상태의 상기 금속산화물로 이루어진 군에서 선택된 1종 이상을 포함하고, 상기 금속산화물은 실리카, 세리아, 지르코니아, 알루미나, 티타니아, 바륨티타니아, 게르마니아, 망가니아 및 마그네시아로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. According to an embodiment of the present invention, the abrasive grains include at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, Silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.
본 발명의 일 실시예에 따라, 상기 연마 입자는, 술폰기, 카르복실기 또는 이 둘로 표면 치환된 것일 수 있다. According to an embodiment of the present invention, the abrasive grains may be surface-substituted with a sulfone group, a carboxyl group or both.
본 발명의 일 실시예에 따라, 상기 연마입자는, 10 nm 내지 100 nm인 단일 사이즈 입자이거나 10 nm 내지 100 nm의 2종 이상의 상이한 사이즈를 가지는 혼합 입자를 포함할 수 있다. According to one embodiment of the present invention, the abrasive grains may be single-size particles having a particle size of 10 nm to 100 nm or may include mixed particles having two or more different sizes of 10 nm to 100 nm.
본 발명의 일 실시예에 따라, 상기 연마입자는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.1 중량% 내지 10 중량%일 수 있다. According to one embodiment of the present invention, the abrasive grains may be 0.1% to 10% by weight of the polishing slurry composition of the wafer containing the polycrystalline silicon.
본 발명의 일 실시예에 따라, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물의 pH는, 6 내지 10의 범위를 가지는 것일 수 있다. According to one embodiment of the present invention, the pH of the polishing slurry composition of the wafer containing the polycrystalline silicon may be in the range of 6 to 10.
본 발명의 일 실시예에 따라, 상기 산화물 연마조절제는, 유기술폰산계 화합물을 포함할 수 있다. According to an embodiment of the present invention, the oxide polishing agent may include an organic sulfonic acid-based compound.
본 발명의 일 실시예에 따라, 상기 유기술폰산계 화합물은, 캄포술폰산(CSA), 도데실유기술폰산(DBSA), 아크릴아미도메틸술폰산 (AMPSA), p-톨루엔술폰산(PTSA), 메탄술폰산, 에탄술폰산, 프로판술폰산, 부탄술폰산, 나프탈렌술폰산, 디노닐나프탈렌술폰산, 디노닐나프탈렌디술폰산, 벤젠술폰산 및 도데실벤젠다이술폰산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. According to an embodiment of the present invention, the organic sulfonic acid compound may be selected from the group consisting of camphorsulfonic acid (CSA), dodecylsulfonic acid (DBSA), acrylamidomethylsulfonic acid (AMPSA), p-toluenesulfonic acid (PTSA) And at least one member selected from the group consisting of ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, dinonylnaphthalene disulfonic acid, benzenesulfonic acid and dodecylbenzenedisulfonic acid.
본 발명의 일 실시예에 따라, 상기 산화물 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 10 중량%일 수 있다. According to one embodiment of the present invention, the oxide polishing regulator may be 0.001 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
본 발명의 일 실시예에 따라, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은, 음의 제타전위를 갖는 것일 수 있다. According to one embodiment of the present invention, the polishing slurry composition of the wafer containing the polycrystalline silicon may have a negative zeta potential.
본 발명의 일 실시예에 따라, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은, -1 mV 내지 -100 mV의 제타전위를 갖는 것일 수 있다. According to one embodiment of the present invention, the polishing slurry composition of the wafer containing polycrystalline silicon may have a zeta potential of -1 mV to -100 mV.
본 발명의 일 실시예에 따라, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은, 연마시간 0초 초과 내지 30초 이내의 다결정 실리콘 막의 연마속도는 15 Å/min 이상일 수 있다.According to an embodiment of the present invention, the polishing slurry composition of the wafer containing the polycrystalline silicon may have a polishing rate of 15 ANGSTROM / min or more for a polysilicon film having a polishing time of more than 0 seconds and less than 30 seconds.
본 발명은, 슬러리 조성물의 제타전위을 조절하여, 다결정실리콘 막에 형성된 산화막에 대한 연마율을 증가시켜, 초기 다결정실리콘막의 연마율을 향상시킬 수 있다. The present invention can improve the polishing rate of the initial polysilicon film by adjusting the zeta potential of the slurry composition to increase the polishing rate for the oxide film formed on the polysilicon film.
이하 본 발명의 실시예들을 상세히 설명한다. 본 발명을 설명함에 있어서, 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략할 것이다. 또한, 본 명세서에서 사용되는 용어들은 본 발명의 바람직한 실시예를 적절히 표현하기 위해 사용된 용어들로서, 이는 사용자, 운용자의 의도 또는 본 발명이 속하는 분야의 관례 등에 따라 달라질 수 있다. 따라서, 본 용어들에 대한 정의는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다. Hereinafter, embodiments of the present invention will be described in detail. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.
명세서 전체에서, 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성 요소를 더 포함할 수 있는 것을 의미한다.Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.
이하, 일 실시예에 따른 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물에 대하여 실시예를 참조하여 구체적으로 설명하도록 한다. 그러나, 본 발명이 이러한 실시예에 제한되는 것은 아니다.Hereinafter, a polishing slurry composition of a wafer containing polycrystalline silicon according to one embodiment will be specifically described with reference to examples. However, the present invention is not limited to these embodiments.
본 발명은, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물에 관한 것으로, 본 발명의 일 실시예에 따라, 본 발명은, 연마입자; 다결정실리콘 연마조절제; 다결정실리콘 표면개선제; 및 산화물 연마조절제;를 포함하는, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 제공할 수 있다.The present invention relates to a polishing slurry composition for wafers containing polycrystalline silicon, and in accordance with one embodiment of the present invention, the present invention provides a polishing slurry composition comprising abrasive grains; Polycrystalline silicon polishing modifiers; Polycrystalline silicon surface modifiers; And an oxide polishing regulator. The polishing slurry composition of the present invention can be applied to a polishing slurry of a wafer containing polycrystalline silicon.
본 발명의 일 예로, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은 다결정실리콘막, 비정질실리콘막 및 산화실리콘막으로 이루어진 군에서 선택된 1종 이상을 포함하는 웨이퍼를 연마하는데 유용할 수 있다.In one embodiment of the present invention, the polishing slurry composition of the wafer containing polycrystalline silicon may be useful for polishing a wafer including at least one selected from the group consisting of a polycrystalline silicon film, an amorphous silicon film and a silicon oxide film.
본 발명의 일 예로, 상기 다결정실리콘막은 본 기술분야에서 공지된 임의의 적합한 다결정실리콘 물질일 수 있다. 예를 들어, 다결정실리콘은, 임의의 적합한 상(phase)으로 존재할 수 있으며, 무정형, 결정형 또는 이들의 조합일 수 있다. 산화실리콘막은, 본 기술분야에 공지된 임의의 적합한 산화실리콘 물질일 수 있다. 예를 들어, 테트라에틸 오르소실리케이트(tetraethyl orthosilicate; TEOS), 플라즈마-에칭된 테트라에틸 오르소실리케이트(plasma enhanced tetraethyl orthosilicate; PETEOS), 포스포실리케이트 유리(phosphor silicate glass; PSG), 보론실리케이트 유리(boron silicate glass; BSG), 보로포스포실리케이트 유리(boro-phospho silicate glass; BPSG), 열 옥사이드(thermal oxide) 및 도핑되지 않은 실리케이트 유리(undoped silicate glass; USG), 고밀도플라즈마 산화막(high density plasma; HDP oxide)을 포함할 수 있다.In one example of the present invention, the polysilicon film may be any suitable polycrystalline silicon material known in the art. For example, the polycrystalline silicon can be in any suitable phase, and can be amorphous, crystalline, or a combination thereof. The silicon oxide film may be any suitable silicon oxide material known in the art. For example, it is possible to use tetraethyl orthosilicate (TEOS), plasma enhanced tetraethyl orthosilicate (PETEOS), phosphor silicate glass (PSG), boron silicate glass boron silicate glass (BSG), borophosphosilicate glass (BPSG), thermal oxide and undoped silicate glass (USG), high density plasma oxide (HDG) HDP oxide).
본 발명의 일 예로, 상기 연마입자는, 금속산화물, 유기물 및/또는 무기물로 코팅된 금속산화물, 및 콜로이달 상태의 상기 금속산화물로 이루어진 군에서 선택되는 1종 이상을 포함하고, 상기 금속산화물은 실리카, 세리아, 지르코니아, 알루미나, 티타니아, 바륨티타니아, 게르마니아, 망가니아 및 마그네시아로 이루어진 군에서 선택되는 1종 이상을 포함하는 것일 수 있다. 상기 연마입자는 실리카, 유기물 및/또는 무기물로 코팅된 실리카, 및 콜로이달 상태의 실리카로 이루어진 군에서 선택된 1종 이상을 사용할 수 있다. In one embodiment of the present invention, the abrasive grains include at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic and / or an inorganic material, and a metal oxide in a colloidal state, Silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia. The abrasive grains may be at least one selected from the group consisting of silica coated with an organic material and / or an inorganic material, and colloidal silica.
예를 들어, 상기 연마입자는, 액상법에 의해 제조된 것을 포함하는 것일 수 있다. 액상법은 연마 입자 전구체를 수용액 중에서 화학적 반응을 발생시키고, 결정을 성장시켜 미립자를 얻는 졸-겔(sol-gel) 법이나 연마입자 이온을 수용액에서 침전시키는 공침법 및 고온 고압 하에서 연마입자를 형성하는 수열합성법 등을 적용하여 제조될 수 있다.For example, the abrasive grains may include those prepared by the liquid phase method. The liquid phase method includes a sol-gel method in which an abrasive particle precursor is caused to undergo a chemical reaction in an aqueous solution and crystals are grown to obtain fine particles, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, Hydrothermal synthesis method or the like.
예를 들어, 상기 연마입자는, 10 nm 내지 100 nm인 단일 사이즈 입자이거나 10 nm 내지 100 nm의 2종 이상의 상이한 사이즈를 가지는 혼합 입자인 것일 수 있다. 바람직하게는, 30 nm 내지 60 nm인 것일 수 있다. 상기 연마입자의 크기가 10 nm 미만인 경우 연마 속도의 저하를 초래할 수 있으며, 100 nm 초과인 경우 과잉 연마가 이루어지고, 디싱, 침식 및 표면 결함이 발생할 가능성이 있다. 상기 연마입자의 크기는, SEM 분석 또는 동적광산란으로 측정할 수 있다.For example, the abrasive particles may be single-sized particles having a particle size of 10 nm to 100 nm or mixed particles having two or more different sizes of 10 nm to 100 nm. Preferably, it may be 30 nm to 60 nm. If the size of the abrasive grains is less than 10 nm, the polishing rate may be lowered. If the size of the abrasive grains is more than 100 nm, excess polishing may occur and dishing, erosion and surface defects may occur. The size of the abrasive grains can be measured by SEM analysis or dynamic light scattering.
예를 들어, 상기 연마입자는, 2종의 상이한 사이즈를 가지는 입자가 혼합되어 바이모달(bimodal) 형태의 입도 분포를 가지는 것이거나, 3종의 상이한 사이즈를 가지는 입자가 혼합되어 3가지 피크를 보이는 입도분포를 가지는 것일 수 있다. 상대적으로 큰 연마입자와 상대적으로 작은 연마입자가 혼재함으로써 더 우수한 분산성을 가지며, 웨이퍼 표면에 스크래치를 감소시키는 효과를 기대할 수 있다.For example, the abrasive grains may have a particle size distribution of bimodal form mixed with two particles having different sizes, or a mixture of particles having three different sizes to show three peaks And may have a particle size distribution. The relatively large abrasive grains and the relatively small abrasive grains can be mixed to have better dispersibility and the effect of reducing the scratch on the wafer surface can be expected.
예를 들어, 상기 연마입자는, 술폰기, 카르복실기 또는 이 둘로 표면 치환된 것일 수 있다. 예를 들어, 상기 연마입자 100 중량부에 대해 1 내지 20 중량부로 표면지환될 수 있다.For example, the abrasive grains may be surface-substituted with a sulfone group, a carboxyl group, or both. For example, it may be surface-alicyclic with 1 to 20 parts by weight based on 100 parts by weight of the abrasive grains.
예를 들어, 상기 연마입자는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.1 중량% 내지 10 중량%인 것일 수 있다. 상기 연마입자가 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.1 중량% 미만인 경우 연마 속도가 감소되는 문제가 있고, 10 중량% 초과인 경우 연마속도가 너무 높고, 연마입자 수의 증가로 인하여 표면의 잔류하게 되는 입자 흡착성에 의하여 표면 결함을 발생시킬 수 있다.For example, the abrasive grains may be 0.1 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon. When the abrasive grains are less than 0.1% by weight of the polishing slurry composition of the wafer containing the polycrystalline silicon, there is a problem that the polishing rate is reduced. When the abrasive grains are more than 10% by weight, the polishing rate is too high, It is possible to generate surface defects by the residual particle adsorption property of the particles.
본 발명의 일 예로, 상기 다결정실리콘 연마조절제는, 바람직하게는 다결정실리콘, 및 비정질실리콘에 대한 연마율을 향상시키기 위해서 아민계 화합물을 포함할 수 있다. As one example of the present invention, the polycrystalline silicon polishing regulator may include an amine compound to improve the polishing rate, preferably for polycrystalline silicon and amorphous silicon.
예를 들어, 상기 아민계 화합물은, 프로필아민, 부틸아민, 디에틸아민, 디프로필아민, 디부틸아민, 트리에틸아민, 트리부틸아민, 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 에틸렌트리아민, 디에틸렌트리아민, 부틸렌디아민, 펜타메틸렌디아민, 헥사메틸렌디아민, 비스(3-아미노프로필)아민, N-이소프로필에틸렌디아민, N-이소프로필-1,3-프로판디아민, 테트라에틸렌펜타아민, N,N'-디메틸-1,3-프로판디아민, 1-디메틸아미노-2-프로필아민, 2,2-디메틸-1,3-프로판디아민, N,N-디메틸-1,3-프로판디아민, N,N,N,N-테트라메틸에틸렌디아민, 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에틴올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민 페닐에틸아민(Phenylethylamine), 펜에틸아민(Phenethylamine), 메톡시펜에틸아민(Methoxyphenethylamine), 아미노프로필아닐린(Aminopropylaniline) 벤질아민(Bebzylamine), 디벤질아민(Dibenzylamine), N-메틸벤질아민(N-Methylbenzylamine), 디메틸벤질아민(Dimethylbenzylamine), 4-벤질피페리딘(4-Benzylpiperidine), 디벤질에탄올아민(Dibenzylethanolamine), 트리벤질아민(Tribenzylamine), 및 에틸사이클로헥실아민(Ethylcyclohexylamine)으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다.For example, the amine compound may be selected from the group consisting of propylamine, butylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, , Diethylenetriamine, butylenediamine, pentamethylenediamine, hexamethylenediamine, bis (3-aminopropyl) amine, N-isopropylethylenediamine, N-isopropyl-1,3-propanediamine, tetraethylenepentamine , N, N'-dimethyl-1,3-propanediamine, 1-dimethylamino-2-propylamine, 2,2- , N, N, N, N-tetramethylethylenediamine, 1,5-diamino-3-pentanol, 2-dimethylamino- Propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino 1-propanol, 2- (2-aminoethylamino) ethanol, 2-diethylamino-1-ethanol, 2- ethylamino- Amine, N-propyldiethanolamine, N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt- butylethanolamine, N-cydecylhexyldiethanolamine 2-aminoethanol, 2-aminoethanol, 2-t-butylaminoethanol, 2-aminoaminoethanol, 2- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxyethyl) 2-methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine, phenylethylamine, phenethylamine, methoxyphene, The reaction is carried out in the presence of a base such as methoxyphenethylamine, aminopropylaniline, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzylamine, 4-benzylpiperidine 4-benzylpiperidine, dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine. In the present invention, it is also possible to use at least one selected from the group consisting of 4-benzylpiperidine, dibenzylethanolamine, tribenzylamine and ethylcyclohexylamine.
예를 들어, 상기 다결정실리콘 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 10 중량%일 수 있다. 상기 다결정실리콘 연마조절제가 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 미만인 경우 산화막 연마량이 낮은 문제점이 있고, 10 중량% 초과인 경우 슬러리 조성물의 분산성이 저하되는 문제점이 있다. For example, the polycrystalline silicon polishing modifier may be 0.001 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon. When the polycrystalline silicon polishing regulator is less than 0.001 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon, the polishing rate of the oxide film is low. When the polishing slurry composition is more than 10 wt%, the dispersibility of the slurry composition is deteriorated.
본 발명의 일 예로, 상기 다결정실리콘 표면개선제는, 유기산, 무기산 또는 이 둘을 포함할 수 있다. In one embodiment of the present invention, the polysilicon surface modifier may include an organic acid, an inorganic acid, or both.
예를 들어, 상기 다결정실리콘 표면개선제는, 상기 유기산은, 시트르산, 말산, 말레산, 말론산, 옥살산, 숙신산, 락트산, 타르타르산, 아디프산, 피멜산, 수베르산, 아젤라산, 세바크산, 말레산, 푸마르산, 아세트산, 부티르산, 카프르산, 카프로산, 카프릴산, 글루타르산, 글리콜산, 포름산, 라우르산, 미리스트산, 팔미트산, 프탈산, 프로피온산, 피루브산, 스테아르산 및 발레르산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the polycrystalline silicon surface improver may be selected from the group consisting of citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, , Maleic, fumaric, acetic, butyric, capric, caproic, caprylic, glutaric, glycolic, formic, lauric, myristic, palmitic, phthalic, propionic, And valeric acid may be included.
예를 들어, 상기 무기산은, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산 및 과염소산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the inorganic acid may include at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, bromic acid, iodic acid, hydrochloric acid and perchloric acid.
예를 들어, 상기 다결정실리콘 표면개선제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.1 중량% 내지 2 중량%인 것일 수 있다. 상기 다결정실리콘 표면개선제가 0.1 중량% 미만인 경우 다결정실리콘막의 연마속도가 저하될 수 있고, 2 중량% 초과인 경우 분산 안정성이 저하되어 스크래치와 같은 표면 결함이 발생하는 문제가 있다.For example, the polycrystalline silicon surface modification agent may be 0.1 wt% to 2 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon. If the amount of the polysilicon surface improver is less than 0.1 wt%, the polishing rate of the polysilicon film may be lowered. If the polysilicon surface improver is more than 2 wt%, the dispersion stability may be lowered and surface defects such as scratches may occur.
본 발명의 일 예로, 상기 산화물 연마조절제는, 유기술폰산계 화합물을 포함할 수 있으며, 이는 상기 슬러리 조성물의 제타전위를 음의 값으로 낮추어 산화막, 이는 초기 CMP 과정에서 다결정 실리콘 표면 상에 형성된 산화막의 연마가 용이하여 다결정실리콘막의 초기 연마율을 향상시킬 수 있다.In one embodiment of the present invention, the oxide polishing regulator may include an organic sulfonic acid compound, which is an oxide film formed by lowering the zeta potential of the slurry composition to a negative value, which is an oxide film formed on the polycrystalline silicon surface in the initial CMP process It is easy to polish and the initial polishing rate of the polysilicon film can be improved.
예를 들어, 상기 유기술폰산계 화합물은, 캄포술폰산(CSA), 도데실유기술폰산(DBSA), 아크릴아미도메틸술폰산 (AMPSA), p-톨루엔술폰산(PTSA), 메탄술폰산, 에탄술폰산, 프로판술폰산, 부탄술폰산, 나프탈렌술폰산, 디노닐나프탈렌술폰산, 디노닐나프탈렌디술폰산, 벤젠술폰산 및 도데실벤젠다이술폰산으로 이루어진 군에서 선택된 1종 이상을 포함할 수 있다. For example, the organic sulfonic acid compound may be selected from the group consisting of camphorsulfonic acid (CSA), dodecylsulfonic acid (DBSA), acrylamidomethylsulfonic acid (AMPSA), p-toluenesulfonic acid (PTSA), methanesulfonic acid, ethanesulfonic acid, , Butane sulfonic acid, naphthalene sulfonic acid, dinonylnaphthalene sulfonic acid, dinonylnaphthalene disulfonic acid, benzene sulfonic acid, and dodecylbenzene disulfonic acid.
예를 들어, 상기 산화물 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 5 중량%인 것일 수 있다. 상기 함량 범위 내에 포함되면, 다결정 실리콘 막의 초기 연마 속도 및 연마 성능의 개선 효과를 나타낼 수 있다. For example, the oxide polishing agent may be 0.001 wt% to 5 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon. When the content is within the above range, the initial polishing rate and the polishing performance of the polysilicon film can be improved.
본 발명의 일 예로, 상기 슬러리는, pH 조절제를 더 포함할 수 있고, 상기 pH 조절제는, 산성 물질, 염기성 물질 또는 이 둘을 포함할 수 있다. In one embodiment of the present invention, the slurry may further include a pH adjusting agent, and the pH adjusting agent may include an acidic substance, a basic substance, or both.
예를 들어, 상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하는 것이고, 상기 염기성 물질은, 암모니아, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨 및 이미다졸로 이루어진 군으로부터 선택된 1종 이상을 포함하는 것일 수 있다.For example, the acidic substance may be at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrobromic acid, hydroiodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, At least one compound selected from the group consisting of fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid and tartaric acid, The material is selected from the group consisting of ammonia, ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, At least one selected from the group consisting of sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate, sodium hydrogen carbonate,
본 발명의 일 예로, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물의 pH는, 6 내지 10의 범위를 가지는 것일 수 있다. 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물의 pH가 6 내지 10의 범위를 벗어나는 경우, pH 10을 초과하는 알카리 영역으로 갈수록 연마 후 반도체 재료의 탈락이 크게 발생하게 될 수 있어, 다결정실리콘막 표면의 거칠기(roughness)가 일정하지 않고, 디싱, 침식, 침식, 부식 및 표면 불균형과 같은 결함을 발생시킬 수 있으며, pH 6 미만의 산성 영역으로 갈수록 슬러리 조성물의 안정성에 문제점이 발생할 수 있다. 상기 pH는 상기의 pH 조절제의 첨가에 의해 조정이 가능하다.In one embodiment of the present invention, the pH of the polishing slurry composition of the wafer containing the polycrystalline silicon may be in the range of 6 to 10. When the pH of the polishing slurry composition of the wafer containing the polycrystalline silicon is out of the range of 6 to 10, the removal of the semiconductor material after polishing may become larger as it goes to the alkali region exceeding the pH 10, Can cause defects such as dishing, erosion, erosion, corrosion, and surface imbalance, and problems may arise in the stability of the slurry composition toward the acidic region of less than pH 6. The pH can be adjusted by adding the above-mentioned pH adjusting agent.
본 발명의 일 예로, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은, 음의 제타전위을 가지며, 예를 들어, -1 mV 내지 -100 mV; -10 mV 내지 -80 mV; 또는 -20 mV 내지 -60 mV의 제타전위를 가질 수 있다. 상기 제타전위 범위 내에 포함되면, 음(-)의 전하를 갖는 산화막의 연마속도를 증가시킬 수 있고, 초기 상기 다결정실리콘을 함유하는 웨이퍼의 연마속도를 향상시킬 수 있다.In one example of the present invention, the polishing slurry composition of the wafer containing the polycrystalline silicon has a negative zeta potential, for example, from -1 mV to -100 mV; -10 mV to -80 mV; Or a zeta potential of -20 mV to -60 mV. When included in the zeta potential range, the polishing rate of the oxide film having negative (-) charge can be increased, and the polishing rate of the wafer containing the polycrystalline silicon at the initial stage can be improved.
예를 들어, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물은, 연마시간 0초 초과 내지 30초 이내의 다결정 실리콘 막의 연마속도는 5 (Å/min) 이상; 15 (Å/min) 이상; 20 (Å/min) 내지 100 (Å/min); 또는 20 (Å/min) 내지 80 (Å/min)일 수 있다. For example, the polishing slurry composition of the wafer containing the polycrystalline silicon has a polishing rate of 5 (Å / min) or more for a polysilicon film having a polishing time of more than 0 seconds and not more than 30 seconds; 15 (A / min) or more; 20 (A / min) to 100 (A / min); Or 20 (A / min) to 80 (A / min).
예를 들어, 0초 초과 내지 12초 이내의 다결정 실리콘 막의 연마속도는, 5 (Å/min) 이상; 8 (Å/min) 내지 80 (Å/min); 또는 8 (Å/min) 내지 30 (Å/min); 일 수 있다. For example, the polishing rate of the polysilicon film in the range of more than 0 seconds to 12 seconds is not less than 5 (A / min); 8 (A / min) to 80 (A / min); Or 8 (A / min) to 30 (A / min); Lt; / RTI >
본 발명의 일 예로, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 이용할 경우에, 상기 다결정실리콘막에 대한 연마속도는 1 Å/min 내지 300 Å/min, 바람직하게는, 5 Å/min 내지 150 Å/min이고, 비정질실리콘막에 대한 연마속도는 1 Å/min 내지 300 Å/min, 바람직하게는, 5 Å/min 내지 150 Å/min일 수 있다.In one embodiment of the present invention, when the polishing slurry composition of the wafer containing the polycrystalline silicon is used, the polishing rate for the polycrystalline silicon film is in the range of 1 Å / min to 300 Å / min, preferably 5 Å / min Min, and the polishing rate for the amorphous silicon film may be from 1 A / min to 300 A / min, preferably from 5 A / min to 150 A / min.
본 발명의 일 예로, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 이용할 경우에, 상기 산화실리콘막에 대한 연마속도는 1 Å/min 내지 100 Å/min, 바람직하게는, 1 Å/min 내지 30 Å/min인 것일 수 있다.In one embodiment of the present invention, when the polishing slurry composition of the wafer containing the polycrystalline silicon is used, the polishing rate for the silicon oxide film is in the range of 1 Å / min to 100 Å / min, preferably 1 Å / min 30 A / min.
본 발명의 일 예, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 이용하여 패턴 웨이퍼를 연마하는 경우 패턴밀도가 작은 웨이퍼 뿐만 아니라 패턴밀도가 큰 웨이퍼에서도 높은 연마율을 확보할 수 있다. In one embodiment of the present invention, when polishing a patterned wafer using the polishing slurry composition of the wafer containing the polycrystalline silicon, a high polishing rate can be ensured not only in a wafer having a small pattern density but also in a wafer having a large pattern density.
이하, 하기 실시예 및 비교예를 참조하여 본 발명을 상세하게 설명하기로 한다. 그러나, 본 발명의 기술적 사상이 그에 의해 제한되거나 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to the following examples and comparative examples. However, the technical idea of the present invention is not limited or limited thereto.
실시예Example 1 내지 1 to 실시예Example 7 7
초순수에 평균 입도가 60 nm 크기의 콜로이달 실리카 연마입자 2.0 중량% 및 글루타르산 0.3 중량%을 첨가하고, 표 1에 따라 아민 및 첨가제를 혼합한 이후 pH조절제 KOH를 첨가하여 조성물의 pH를 조절하여 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물을 제조하였다.2.0% by weight of colloidal silica abrasive grains having an average particle size of 60 nm and 0.3% by weight of glutaric acid were added to ultrapure water and the pH and the pH of the composition were adjusted by adding a pH adjusting agent, KOH, To prepare a polishing slurry composition of a wafer containing polycrystalline silicon.
비교예Comparative Example 1 내지 1 to 비교예Comparative Example 3 3
표 1에서 제시한 아민을 첨가한 것 외에는 실시예 1과 동일한 방법으로 다결정실리콘을 함유하는 웨피어의 연마 슬러리 조성물을 제조하였다. A polishing slurry composition of a wafer containing poly-silicon was prepared in the same manner as in Example 1 except that the amine shown in Table 1 was added.
[연마 조건] [Polishing condition]
1. 연마기: ST#01 (케이씨텍 社)1. Grinding machine: ST # 01 (KCStech)
2. 패드: IC1010 (Dow社)2. Pad: IC1010 (Dow)
3. 플레이튼 RPM (Platen RPM): 833. Platen RPM: 83
4. 캐리어 RPM (Carrier RPM): 804. Carrier RPM (Carrier RPM): 80
5. 웨이퍼 압력: 1 psi5. Wafer pressure: 1 psi
6. 리테이너링 (Retainer Ring) 압력: 7.5 psi6. Retainer Ring Pressure: 7.5 psi
7. 유량 (Flow rate): 250 ml/min7. Flow rate: 250 ml / min
8. 웨이퍼: Poly Si 5,000 Å 증착된 블랭킷 웨이퍼8. Wafer: Poly Si 5,000 A deposited blanket wafer
9. 폴리싱 시간: 5s 및 30s9. Polishing time: 5s and 30s
하기 표 1은 실시예 및 비교예 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물에 첨가된 아민, 첨가제 및 pH에 따른 연마 성능을 나타낸 것이다. Table 1 below shows the polishing performance according to the amine, additives and pH added to the polishing slurry composition of the wafer containing the polycrystalline silicon in Examples and Comparative Examples.
additive
pH
전위zeta
electric potential
Poly-Si
(Å)Polishing performance
Poly-Si
(A)
PTEOS
(Å)Polishing performance
PTEOS
(A)
(wt%)content
(wt%)
(wt%)content
(wt%)
(Å/sec)30 sec
(Å / sec)
(0.38)11.35
(0.38)
(0.71)21.31
(0.71)
(0.09)2.84
(0.09)
(0.31)9.16
(0.31)
(0.46)13.77
(0.46)
(0.26)7.74
(0.26)
(0.29)8.33
(0.29)
(0.08)2.44
(0.08)
(0.06)1.80
(0.06)
(0.06)1.69
(0.06)
표 1을 살펴보면, p-톨루엔술폰산 첨가제를 포함하는 실시예 1 내지 7은, p-톨루엔술폰산를 포함하지 않는 비교예 1 내지 3에 비하여 다결정 실리콘의 초기 연마 속도가 월등하게 향상되는 것을 확인할 수 있다. As shown in Table 1, it can be seen that Examples 1 to 7 including the p-toluenesulfonic acid additive significantly improved the initial polishing rate of the polycrystalline silicon compared with Comparative Examples 1 to 3 which did not contain p-toluenesulfonic acid.
또한, 벤질 아민을 포함하는 실시예 1 내지 5는, 트리에탄올아민 및 디에탄올아민을 포함하는 실시예 6 및 실시예 7에 비하여 초기 연마속도뿐만 아니라, 다결정 실리콘의 평균 연마속도에서 향상된 결과를 확인할 수 있다. In addition, Examples 1 to 5 including benzylamine show improved results in terms of the initial polishing rate as well as the average polishing rate of polycrystalline silicon, compared with Example 6 and Example 7 comprising triethanolamine and diethanolamine have.
또한, 실시예 3 및 실시예 4에서 p-톨루엔술폰산 함량에 따라 초기 연마속도 및 성능이 변화되는 것을 확인할 수 있다. 또한, 실시예 5에서 pH가 산성으로 낮아지면 연마 성능이 낮아지는 것을 확인할 수 있다.In addition, it can be confirmed that the initial polishing speed and performance are changed according to the content of p-toluenesulfonic acid in Examples 3 and 4. In addition, it can be confirmed that the polishing performance is lowered when the pH is lowered to acidic in Example 5.
이상과 같이 본 발명은 비록 한정된 실시예에 의해 설명되었으나, 본 발명은 상기의 실시예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 그러므로, 본 발명의 범위는 설명된 실시예에 제한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Do. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.
Claims (17)
다결정실리콘 연마조절제;
다결정실리콘 표면개선제; 및
유기술폰산계 화합물을 포함하는 산화물 연마조절제;
를 포함하는,
다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
Abrasive particles;
Polycrystalline silicon polishing modifiers;
Polycrystalline silicon surface modifiers; And
An oxide polishing regulator including an organic sulfonic acid-based compound;
/ RTI >
Polishing slurry composition for wafers containing polycrystalline silicon.
상기 다결정실리콘 연마조절제는, 아민계 화합물을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polycrystalline silicon polishing regulator comprises an amine-based compound.
상기 프로필아민, 부틸아민, 디에틸아민, 디프로필아민, 디부틸아민, 트리에틸아민, 트리부틸아민, 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 에틸렌트리아민, 디에틸렌트리아민, 부틸렌디아민, 펜타메틸렌디아민, 헥사메틸렌디아민, 비스(3-아미노프로필)아민, N-이소프로필에틸렌디아민, N-이소프로필-1,3-프로판디아민, 테트라에틸렌펜타아민, N,N'-디메틸-1,3-프로판디아민, 1-디메틸아미노-2-프로필아민, 2,2-디메틸-1,3-프로판디아민, N,N-디메틸-1,3-프로판디아민, N,N,N',N'-테트라메틸에틸렌디아민, 1,5-디아미노-3-펜탄올, 2-디메틸아미노-2-메틸-1-프로판올, 1-아미노-2-프로판올, 1-디메틸아미노-2-프로판올, 1,3-디아미노-2-프로판올, 3-디메틸아미노-1-프로판올, 2-아미노-1-프로판올, 2-디메틸아미노-1-프로판올, 2-디에틸아미노-1-프로판올, 2-(2-아미노에틸아미노)에탄올, 2-디에틸아미노-1-에탄올, 2-에틸아미노-1-에탄올, 1-(디메틸아미노)2-프로판올, N-메틸디에탄올아민, N-프로필디에탄올아민, N-이소프로필디에탄올아민, N-(2-메틸프로필)디에탄올아민, N-n-부틸디에탄올아민, N-t-부틸에탄올아민, N-시아클로헥실디에탄올아민, 2-(디메틸아미노)에탄올, 2-디에틸아미노에탄올, 2-디프로필아미노에탄올, 2-브틸아미노에틴올, 2-t-부틸아미노에탄올, 2-사이클로아미노에탄올, 2-아미노-2-펜타놀, 2-[비스(2-하이드록시에틸)아미노]-2-메틸-1-프로판올, 2-[비스(2-하이드록시에틸)아미노]-2-프로판올, N,N'-비스(2-하이드록시프로필)에탄올아민, 2-아미노-2-메틸-1-프로판올, 트리스(하이드록시메틸)아미노메탄, 트리아이소프로판올아민 페닐에틸아민(Phenylethylamine), 펜에틸아민(Phenethylamine), 메톡시펜에틸아민(Methoxyphenethylamine), 아미노프로필아닐린(Aminopropylaniline) 벤질아민(Bebzylamine), 디벤질아민(Dibenzylamine), N-메틸벤질아민(N-Methylbenzylamine), 디메틸벤질아민(Dimethylbenzylamine), 4-벤질피페리딘(4-Benzylpiperidine), 디벤질에탄올아민(Dibenzylethanolamine), 트리벤질아민(Tribenzylamine), 및 에틸사이클로헥실아민(Ethylcyclohexylamine)으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
3. The method of claim 2,
Examples of the amine compound include amine compounds such as amine compounds such as propylamine, butylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, ethylenetriamine, diethylenetriamine, N-isopropylethylenediamine, N-isopropyl-1,3-propanediamine, tetraethylenepentamine, N, N'-dimethyl-1 N, N ', N', N'-tetramethylenediamine, N, N-dimethyl-1,3-propanediamine, 2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 1-dimethylamino- Propanol, 2-amino-1-propanol, 2-diethylamino-1-propanol, 2- (2-amino- - aminoethyl (Dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-iso (2-methylpropyl) ethanolamine, N, N-diethanolamine, Nt-butylethanolamine, N-cydecylhexyldiethanolamine, 2- 2-amino-2-pentanol, 2- [bis (2-hydroxyphenyl) amino] ethyl, (2-hydroxyethyl) amino] -2-propanol, N, N'-bis (2-hydroxypropyl) ethanolamine, 2- Methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine, phenylethylamine, phenethylamine, methoxyphenethylamine, Aminopropylaniline, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzylamine, 4-benzylpiperidine, di Wherein the polishing slurry composition comprises at least one selected from the group consisting of dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine.
상기 다결정실리콘 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 10 중량%인 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polycrystalline silicon polishing regulator is 0.001 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
상기 다결정실리콘 표면개선제는, 유기산, 무기산 또는 이 둘을 포함하고,
상기 유기산은, 시트르산, 말산, 말레산, 말론산, 옥살산, 숙신산, 락트산, 타르타르산, 아디프산, 피멜산, 수베르산, 아젤라산, 세바크산, 말레산, 푸마르산, 아세트산, 부티르산, 카프르산, 카프로산, 카프릴산, 글루타르산, 글리콜산, 포름산, 라우르산, 미리스트산, 팔미트산, 프탈산, 프로피온산, 피루브산, 스테아르산 및 발레르산으로 이루어진 군에서 선택된 1종 이상을 포함하고,
상기 무기산은, 황산, 질산, 인산, 규산, 불산, 붕산, 브롬산, 요오드산, 염산 및 과염소산으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polycrystalline silicon surface improver comprises an organic acid, an inorganic acid or both,
The organic acid may be at least one selected from the group consisting of citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, At least one member selected from the group consisting of at least one member selected from the group consisting of maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, maleic acid, / RTI >
Wherein the inorganic acid comprises at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, bromic acid, iodic acid, hydrochloric acid and perchloric acid.
상기 다결정실리콘 표면개선제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 2 중량%인 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polycrystalline silicon surface improver is 0.001 wt% to 2 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
산성 물질, 염기성 물질 또는 이 둘을 포함하는 pH 조절제;를 더 포함하고,
상기 산성 물질은, 질산, 염산, 인산, 황산, 불산, 브롬산, 요오드산, 포름산, 말론산, 말레인산, 옥살산, 초산, 아디프산, 구연산, 아디프산, 아세트산, 프로피온산, 푸마르산, 유산, 살리실산, 피멜린산, 벤조산, 숙신산, 프탈산, 부티르산, 글루타르산, 글루타민산, 글리콜산, 락트산, 아스파라긴산, 타르타르산 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하고,
상기 염기성 물질은, 암모니아, 암모늄메틸프로판올(ammonium methyl propanol; AMP), 테트라메틸암모늄하이드록사이드(tetra methyl ammonium hydroxide; TMAH), 수산화암모늄, 수산화칼륨, 수산화나트륨, 수산화마그네슘, 수산화루비듐, 수산화세슘, 탄산수소나트륨, 탄산나트륨, 이미다졸 및 그의 염으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Further comprising a pH adjusting agent comprising an acidic substance, a basic substance or both,
The acidic substance may be at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, At least one member selected from the group consisting of salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid,
The basic material may be selected from the group consisting of ammonia, ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, , Sodium hydrogencarbonate, sodium carbonate, imidazole and salts thereof. The polishing slurry composition for a wafer containing polycrystalline silicon according to claim 1,
상기 연마입자는,
금속산화물, 유기물 또는 무기물로 코팅된 금속산화물, 및 콜로이달 상태의 상기 금속산화물로 이루어진 군에서 선택된 1종 이상을 포함하고,
상기 금속산화물은 실리카, 세리아, 지르코니아, 알루미나, 티타니아, 바륨티타니아, 게르마니아, 망가니아 및 마그네시아로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
The above-
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese and magnesia.
상기 연마 입자는, 술폰기, 카르복실기 또는 이 둘로 표면 치환된 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the abrasive grains are surface-substituted with a sulfone group, a carboxyl group or both.
상기 연마입자는, 10 nm 내지 100 nm인 단일 사이즈 입자이거나 10 nm 내지 100 nm의 2종 이상의 상이한 사이즈를 가지는 혼합 입자를 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the abrasive particles comprise mixed particles having a size ranging from 10 nm to 100 nm or having at least two different sizes from 10 nm to 100 nm.
상기 연마입자는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.1 중량% 내지 10 중량%인 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the abrasive grains are 0.1 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물의 pH는, 6 내지 10의 범위를 가지는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the pH of the polishing slurry composition of the wafer containing the polycrystalline silicon is in the range of 6 to 10. The polishing slurry composition of claim 1,
상기 유기술폰산계 화합물은, 캄포술폰산(CSA), 도데실유기술폰산(DBSA), 아크릴아미도메틸술폰산 (AMPSA), p-톨루엔술폰산(PTSA), 메탄술폰산, 에탄술폰산, 프로판술폰산, 부탄술폰산, 나프탈렌술폰산, 디노닐나프탈렌술폰산, 디노닐나프탈렌디술폰산, 벤젠술폰산 및 도데실벤젠다이술폰산으로 이루어진 군에서 선택된 1종 이상을 포함하는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
The organic sulfonic acid compound may be selected from the group consisting of camphorsulfonic acid (CSA), dodecylsulfonic acid (DBSA), acrylamidomethylsulfonic acid (AMPSA), p-toluenesulfonic acid (PTSA), methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, Wherein the polishing slurry composition contains at least one selected from the group consisting of naphthalene sulfonic acid, dinonylnaphthalene sulfonic acid, dinonylnaphthalene disulfonic acid, benzene sulfonic acid and dodecylbenzene dicarboxylic acid.
상기 산화물 연마조절제는, 상기 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물 중 0.001 중량% 내지 10 중량%인 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the oxide polishing regulator is 0.001 wt% to 10 wt% of the polishing slurry composition of the wafer containing the polycrystalline silicon.
음의 제타전위를 갖는, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
A polishing slurry composition for a wafer containing polycrystalline silicon, having negative zeta potential.
-1 mV 내지 -100 mV의 제타전위를 갖는 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polishing composition has a zeta potential of -1 mV to -100 mV.
연마시간 0초 초과 내지 30초 이내의 다결정 실리콘 막의 연마속도는 15 Å/min 이상인 것인, 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물.
The method according to claim 1,
Wherein the polishing rate of the polysilicon film in a polishing time of more than 0 seconds to 30 seconds is not less than 15 ANGSTROM / min.
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