KR102533088B1 - Chemical mechanical polishing slurry composition of wafer contaning poly-silicon - Google Patents

Abstract

The present invention, abrasive particles; Polysilicon polishing control agent; polysilicon surface improving agent; It relates to a polishing slurry composition for a wafer containing polysilicon, including; and an oxide polishing control agent containing an organic sulfonic acid compound.

Description

Wafer polishing slurry composition containing polysilicon

The present invention relates to a polishing slurry composition for wafers containing polysilicon.

As semiconductor devices are diversified and highly integrated, finer pattern formation technology is being used, and accordingly, the surface structure of semiconductor devices is becoming more complex and the level difference between surface films is getting larger. In manufacturing semiconductor devices, a chemical mechanical polishing (CMP) process is used as a planarization technique for removing steps in a specific film formed on a wafer. CMP compositions are selective in removing one type of integrated circuit component over another. Compositions and methods for CMP of wafer surfaces are well known in the art. CMP slurry compositions for polishing semiconductor wafer surfaces typically include abrasive particles, various additive compounds, and the like. Flash memory devices having three-dimensional transistor stacks (3D flash memory) are increasingly popular. Polishing slurries for 3D flash applications should generally provide polysilicon polishing rates, silicon oxide polishing selectivity, as well as good surface topography and low defect levels.

The present invention is to solve the above problems, and an object of the present invention is to provide a polishing slurry composition for wafers containing polycrystalline silicon, in which the initial polishing rate of polycrystalline silicon is improved.

However, the problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

One aspect of the present invention is

abrasive particles; Polysilicon polishing control agent; polysilicon surface improving agent; and an oxide polishing control agent containing an organic sulfonic acid compound; It may relate to a polishing slurry composition for a wafer containing polysilicon, including a.

According to one embodiment of the present invention, the polysilicon polishing control agent may include an amine-based compound.

According to one embodiment of the present invention, the amine compound is propylamine, butylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanol Amine, ethylenetriamine, diethylenetriamine, butylenediamine, pentamethylenediamine, hexamethylenediamine, bis(3-aminopropyl)amine, N-isopropylethylenediamine, N-isopropyl-1,3-propanediamine , tetraethylenepentamine, N,N'-dimethyl-1,3-propanediamine, 1-dimethylamino-2-propylamine, 2,2-dimethyl-1,3-propanediamine, N,N-dimethyl-1 ,3-propanediamine, N,N,N,N-tetramethylethylenediamine, 1,5-diamino-3-pentanol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2- Propanol, 1-dimethylamino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2- Diethylamino-1-propanol, 2-(2-aminoethylamino)ethanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)2-propanol, N- Methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine, N-t-butylethanolamine, N-cyclohexylamine Sildiethanolamine, 2-(dimethylamino)ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino -2-Pentanol, 2-[bis(2-hydroxyethyl)amino]-2-methyl-1-propanol, 2-[bis(2-hydroxyethyl)amino]-2-propanol, N,N- Bis(2-hydroxypropyl)ethanolamine, 2-amino-2-methyl-1-propanol, tris(hydroxymethyl)aminomethane, triisopropanolamine, phenylethylamine, phenethylamine, Methoxyphenethylamine, Aminopropylaniline, Bebzylamine, Dibenzylamine, N-Methylbenzylamine, Dimethylbenzylamine, 4-Benzylpiperi At least one selected from the group consisting of 4-Benzylpiperidine, dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine may be included.

According to one embodiment of the present invention, the polysilicon polishing control agent may be 0.001% to 10% by weight of the polishing slurry composition of the wafer containing the polysilicon.

According to one embodiment of the present invention, the polysilicon surface improving agent includes an organic acid, an inorganic acid, or both, and the organic acid is citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, and adip. Acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, mi It contains at least one selected from the group consisting of listic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid, wherein the inorganic acid is sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, bromic acid, iodine It may include at least one selected from the group consisting of acid, hydrochloric acid and perchloric acid.

According to one embodiment of the present invention, the polysilicon surface improving agent may be 0.001% to 2% by weight of the polishing slurry composition of the wafer containing the polysilicon.

According to one embodiment of the present invention, a pH adjusting agent comprising an acidic substance, a basic substance, or both; further comprising, wherein the acidic substance is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid , malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid , lactic acid, aspartic acid, tartaric acid, and at least one selected from the group consisting of tartaric acid and salts thereof, wherein the basic material is ammonia, ammonium methyl propanol (AMP), tetra methyl ammonium hydroxide TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogencarbonate, sodium carbonate, imidazole, and salts thereof.

According to an embodiment of the present invention, the abrasive particles include at least one selected from the group consisting of metal oxides, metal oxides coated with organic or inorganic materials, and the metal oxides in a colloidal state, and the metal oxides It may include at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia.

According to one embodiment of the present invention, the abrasive particles may be surface-substituted with a sulfone group, a carboxyl group, or both.

According to one embodiment of the present invention, the abrasive particles may include particles having a single size of 10 nm to 100 nm or mixed particles having two or more different sizes of 10 nm to 100 nm.

According to one embodiment of the present invention, the abrasive particles may be 0.1% to 10% by weight of the polishing slurry composition of the wafer containing the polysilicon.

According to one embodiment of the present invention, the pH of the polishing slurry composition for the wafer containing polysilicon may be in the range of 6 to 10.

According to one embodiment of the present invention, the oxide polishing control agent may include an organic sulfonic acid-based compound.

According to one embodiment of the present invention, the organic sulfonic acid-based compound is camphor sulfonic acid (CSA), dodecyl organic sulfonic acid (DBSA), acrylamidomethyl sulfonic acid (AMPSA), p-toluene sulfonic acid (PTSA), methane sulfonic acid, It may include at least one selected from the group consisting of ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, dinonylnaphthalenedisulfonic acid, benzenesulfonic acid, and dodecylbenzenedisulfonic acid.

According to one embodiment of the present invention, the oxide polishing control agent may be 0.001% by weight to 10% by weight of the polishing slurry composition of the wafer containing the polysilicon.

According to one embodiment of the present invention, the polishing slurry composition of the wafer containing polysilicon may have a negative zeta potential.

According to one embodiment of the present invention, the polishing slurry composition of the wafer containing polysilicon may have a zeta potential of -1 mV to -100 mV.

According to an embodiment of the present invention, the polishing slurry composition for the wafer containing polysilicon may have a polishing rate of 15 Å/min or more for a polishing time greater than 0 seconds to less than 30 seconds.

According to the present invention, by controlling the zeta potential of the slurry composition, the removal rate of the oxide film formed on the polysilicon film can be increased, thereby improving the removal rate of the initial polysilicon film.

Hereinafter, embodiments of the present invention will be described in detail. In describing the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, the terms used in this specification are terms used to appropriately express preferred embodiments of the present invention, which may vary according to the intention of a user or operator or customs in the field to which the present invention belongs. Therefore, definitions of these terms will have to be made based on the content throughout this specification.

Throughout the specification, when a certain component is said to "include", it means that it may further include other components without excluding other components unless otherwise stated.

Hereinafter, a polishing slurry composition for a wafer containing polysilicon according to an embodiment will be described in detail with reference to Examples. However, the present invention is not limited to these examples.

The present invention relates to a polishing slurry composition for a wafer containing polysilicon, and according to an embodiment of the present invention, the present invention includes abrasive particles; Polysilicon polishing control agent; polysilicon surface improving agent; It is possible to provide a polishing slurry composition for a wafer containing polysilicon, including; and an oxide polishing control agent.

As an example of the present invention, the polishing slurry composition for a wafer containing polycrystalline silicon may be useful for polishing a wafer including at least one selected from the group consisting of a polycrystalline silicon film, an amorphous silicon film, and an oxide film.

As an example of the present invention, the polysilicon film may be any suitable polysilicon material known in the art. For example, polysilicon may exist in any suitable phase, and may be amorphous, crystalline, or combinations thereof. The silicon oxide film may be any suitable silicon oxide material known in the art. For example, tetraethyl orthosilicate (TEOS), plasma-etched tetraethyl orthosilicate (PETEOS), phosphor silicate glass (PSG), boron silicate glass ( boron silicate glass (BSG), boro-phospho silicate glass (BPSG), thermal oxide and undoped silicate glass (USG), high density plasma; HDP oxide).

As an example of the present invention, the abrasive particles include at least one selected from the group consisting of metal oxides, metal oxides coated with organic and/or inorganic materials, and the metal oxides in a colloidal state, and the metal oxides It may contain at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia. The abrasive particles may use at least one selected from the group consisting of silica, silica coated with organic and/or inorganic materials, and colloidal silica.

For example, the abrasive particles may include those produced by a liquid phase method. The liquid phase method is a sol-gel method in which abrasive particle precursors undergo a chemical reaction in an aqueous solution and crystals are grown to obtain fine particles, a coprecipitation method in which abrasive particle ions are precipitated in an aqueous solution, and abrasive particles are formed under high temperature and high pressure. It can be prepared by applying a hydrothermal synthesis method or the like.

For example, the abrasive particles may be particles having a single size of 10 nm to 100 nm or mixed particles having two or more different sizes of 10 nm to 100 nm. Preferably, it may be 30 nm to 60 nm. When the size of the abrasive particles is less than 10 nm, the polishing rate may be reduced, and when the size is greater than 100 nm, excessive polishing may occur, and dishing, erosion, and surface defects may occur. The size of the abrasive particles can be measured by SEM analysis or dynamic light scattering.

For example, the abrasive particles have a bimodal particle size distribution in which particles having two different sizes are mixed, or particles having three different sizes are mixed and exhibit three peaks. It may have a particle size distribution. By mixing relatively large abrasive particles and relatively small abrasive particles, it has better dispersibility and an effect of reducing scratches on the wafer surface can be expected.

For example, the abrasive particles may be surface-substituted with a sulfone group, a carboxyl group, or both. For example, 1 to 20 parts by weight based on 100 parts by weight of the abrasive particles may be surface-modified.

For example, the abrasive particles may be 0.1% to 10% by weight of the polishing slurry composition of the wafer containing the polysilicon. If the abrasive particles are less than 0.1% by weight of the polishing slurry composition of the wafer containing polysilicon, there is a problem that the polishing rate is reduced, and if it is greater than 10% by weight, the polishing rate is too high, and the number of abrasive particles increases. Surface defects may be generated by the remaining adsorption of particles.

As an example of the present invention, the polysilicon polishing control agent may preferably contain an amine-based compound in order to improve the polishing rate of polycrystalline silicon and amorphous silicon.

For example, the amine compound is propylamine, butylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, ethylenetriamine , diethylenetriamine, butylenediamine, pentamethylenediamine, hexamethylenediamine, bis(3-aminopropyl)amine, N-isopropylethylenediamine, N-isopropyl-1,3-propanediamine, tetraethylenepentamine , N,N'-dimethyl-1,3-propanediamine, 1-dimethylamino-2-propylamine, 2,2-dimethyl-1,3-propanediamine, N,N-dimethyl-1,3-propanediamine , N,N,N,N-tetramethylethylenediamine, 1,5-diamino-3-pentanol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethyl Amino-2-propanol, 1,3-diamino-2-propanol, 3-dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino-1 -Propanol, 2-(2-aminoethylamino)ethanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)2-propanol, N-methyldiethanolamine, N-propyldiethanolamine, N-isopropyldiethanolamine, N-(2-methylpropyl)diethanolamine, N-n-butyldiethanolamine, N-t-butylethanolamine, N-cyclohexyldiethanolamine, 2 -(Dimethylamino)ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino-2-pentanol , 2-[bis(2-hydroxyethyl)amino]-2-methyl-1-propanol, 2-[bis(2-hydroxyethyl)amino]-2-propanol, N,N-bis(2-hydroxy Roxypropyl) ethanolamine, 2-amino-2-methyl-1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine, phenylethylamine, phenethylamine, methoxyphenethylamine ( Methoxyphenethylamine, Aminopropylaniline, Benzylamine, Dibenzylamine, N-Methylbenzylamine, Dimethylbenzylamine, 4-Benzylpiperidine ), dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine.

For example, the polysilicon polishing control agent may be 0.001% to 10% by weight of the polishing slurry composition of the wafer containing the polysilicon. When the polysilicon polishing control agent is less than 0.001% by weight in the polishing slurry composition of the wafer containing the polysilicon, the oxide film polishing amount is low, and when it is greater than 10% by weight, the dispersibility of the slurry composition is lowered. There is a problem.

As an example of the present invention, the polysilicon surface improving agent may include an organic acid, an inorganic acid, or both.

For example, the polysilicon surface improving agent, the organic acid, citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid , maleic acid, fumaric acid, acetic acid, butyric acid, capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid And it may include one or more selected from the group consisting of valeric acid.

For example, the inorganic acid may include at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrobromic acid, iodic acid, hydrochloric acid, and perchloric acid.

For example, the polysilicon surface improver may be present in an amount of 0.1% to 2% by weight of the polishing slurry composition of the wafer containing the polysilicon. When the polysilicon surface improving agent is less than 0.1% by weight, the polishing rate of the polysilicon film may be lowered, and when it is greater than 2% by weight, dispersion stability is lowered, resulting in surface defects such as scratches.

As an example of the present invention, the oxide polishing control agent may include an organic sulfonic acid-based compound, which lowers the zeta potential of the slurry composition to a negative value to form an oxide film, which is an oxide film formed on a polycrystalline silicon surface in an initial CMP process. Since polishing is easy, the initial polishing rate of the polysilicon film can be improved.

For example, the organic sulfonic acid-based compound is camphor sulfonic acid (CSA), dodecyl organic sulfonic acid (DBSA), acrylamidomethyl sulfonic acid (AMPSA), p-toluene sulfonic acid (PTSA), methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid , butanesulfonic acid, naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, dinonylnaphthalenedisulfonic acid, benzenesulfonic acid, and dodecylbenzenedisulfonic acid.

For example, the oxide polishing control agent may be present in an amount of 0.001% to 5% by weight of the polysilicon-containing wafer polishing slurry composition. When included within the above content range, an initial polishing rate and polishing performance of the polycrystalline silicon film may be improved.

As an example of the present invention, the slurry may further include a pH adjusting agent, and the pH adjusting agent may include an acidic material, a basic material, or both.

For example, the acidic substance is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid, and salts thereof; Substances include ammonia, ammonium methyl propanol (AMP), tetra methyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, carbonic acid It may contain at least one selected from the group consisting of sodium hydrogen, sodium carbonate and imidazole.

As an example of the present invention, the pH of the polishing slurry composition for the wafer containing polysilicon may be in the range of 6 to 10. When the pH of the polishing slurry composition of the wafer containing the polysilicon is out of the range of 6 to 10, the semiconductor material may be largely eliminated after polishing toward the alkali region exceeding pH 10, and the polysilicon film surface The roughness of the slurry is not constant, and defects such as dishing, erosion, erosion, corrosion, and surface imbalance may occur, and problems may occur in the stability of the slurry composition toward an acidic area of pH less than 6. The pH can be adjusted by adding the pH adjusting agent.

As an example of the present invention, the polishing slurry composition of the wafer containing polysilicon has a negative zeta potential, for example, -1 mV to -100 mV; -10 mV to -80 mV; Alternatively, it may have a zeta potential of -20 mV to -60 mV. When the zeta potential is within the range, it is possible to increase the polishing rate of an oxide film having a negative (-) charge, and to increase the polishing rate of a wafer containing polysilicon at an initial stage.

For example, the polishing slurry composition for a wafer containing polycrystalline silicon has a polishing rate of 5 (Å/min) or more for a polycrystalline silicon film within a polishing time exceeding 0 seconds to 30 seconds; 15 (Å/min) or more; 20 (Å/min) to 100 (Å/min); or 20 (Å/min) to 80 (Å/min).

For example, the polishing rate of the polycrystalline silicon film for more than 0 seconds to within 12 seconds is 5 (Å/min) or more; 8 (Å/min) to 80 (Å/min); or 8 (Å/min) to 30 (Å/min); can be

As an example of the present invention, in the case of using the polishing slurry composition for a wafer containing polysilicon, the polishing rate for the polysilicon film is 1 Å/min to 300 Å/min, preferably, 5 Å/min to 150 Å/min, and the polishing rate for the amorphous silicon film may be 1 Å/min to 300 Å/min, preferably 5 Å/min to 150 Å/min.

As an example of the present invention, in the case of using the polishing slurry composition for the wafer containing polysilicon, the polishing rate for the silicon oxide film is 1 Å/min to 100 Å/min, preferably, 1 Å/min to It may be 30 Å/min.

One example of the present invention, when a patterned wafer is polished using the polishing slurry composition for a wafer containing polysilicon, a high polishing rate can be secured not only on a wafer having a small pattern density but also on a wafer having a high pattern density.

Hereinafter, the present invention will be described in detail with reference to the following Examples and Comparative Examples. However, the technical spirit of the present invention is not limited or limited thereby.

Example 1 to Example 7

2.0% by weight of colloidal silica abrasive particles having an average particle size of 60 nm and 0.3% by weight of glutaric acid were added to ultrapure water, and after mixing the amine and additives according to Table 1, the pH adjusting agent KOH was added to adjust the pH of the composition. Thus, a polishing slurry composition for a wafer containing polysilicon was prepared.

comparative example 1 to comparative example 3

A polishing slurry composition for a wafer containing polysilicon was prepared in the same manner as in Example 1, except that the amines shown in Table 1 were added.

[Polishing conditions]

1. Grinding machine: ST#01 (KC Tech Co.)

2. Pad: IC1010 (Dow)

3. Platen RPM: 83

4. Carrier RPM: 80

5. Wafer pressure: 1 psi

6. Retainer Ring Pressure: 7.5 psi

7. Flow rate: 250 ml/min

8. Wafer: Poly Si 5,000 Å deposited blanket wafer

9. Polishing time: 5s and 30s

Table 1 below shows the polishing performance according to the amines, additives, and pH added to the polishing slurry compositions of the wafers containing the polycrystalline silicon of Examples and Comparative Examples.

amine additive
pH
zeta
electric potential polishing performance
Poly-Si
(Å) polishing performance
PTEOS
(Å) type content
(wt%) type content
(wt%) mV 4 seconds 8sec 12sec 30 seconds 30 seconds
(Å/sec) Example 1 benzylamine 0.5 p-Toluenesulfonic acid 1.4 8.5 -18.4 7.98 16.31 23.45 67.2 11.35
(0.38) Example 2 benzylamine 0.5 p-Toluenesulfonic acid 2.0 8.5 -6.4 8.29 19.35 26.7 72.5 21.31
(0.71) Example 3 benzylamine 0.5 p-Toluenesulfonic acid 0.2 8.5 -28.8 1.53 3.79 8.09 54.68 2.84
(0.09) Example 4 benzylamine 0.5 p-Toluenesulfonic acid 5 8.5 8.51 6.72 10.1 19.88 47.13 9.16
(0.31) Example 5 benzylamine 0.5 p-Toluenesulfonic acid 2 6 -5.86 8.21 17.55 26.38 67.54 13.77
(0.46) Example 6 triethanolamine 0.5 p-Toluenesulfonic acid 2 8.5 -13.23 4.64 12.44 15.9 47.04 7.74
(0.26) Example 7 diethanolamine 0.5 p-Toluenesulfonic acid 2 8.5 -12.69 4.99 12.87 17.67 51.74 8.33
(0.29) Comparative Example 1 benzylamine 0.5 - - 8.5 -26.07 1.46 3.01 6.88 30.07 2.44
(0.08) Comparative Example 2 triethanolamine 0.5 - - 8.5 -24.76 1.31 2.33 3.36 21.87 1.80
(0.06) Comparative Example 3 diethanolamine 0.5 - - 8.5 -29.23 1.28 2.16 3.22 20.23 1.69
(0.06)

Referring to Table 1, it can be seen that Examples 1 to 7 containing the p-toluenesulfonic acid additive significantly improved the initial polishing rate of polycrystalline silicon compared to Comparative Examples 1 to 3 not containing p-toluenesulfonic acid.

In addition, in Examples 1 to 5 including benzyl amine, compared to Examples 6 and 7 containing triethanolamine and diethanolamine, not only the initial polishing rate, but also improved results in average polishing rate of polycrystalline silicon can be confirmed. there is.

In addition, in Examples 3 and 4, it can be seen that the initial polishing rate and performance are changed according to the p-toluenesulfonic acid content. In addition, in Example 5, it can be seen that the polishing performance is lowered when the pH is lowered to acidity.

As described above, although the present invention has been described by the limited embodiments, the present invention is not limited to the above embodiments, and various modifications and variations can be made from these descriptions by those skilled in the art in the field to which the present invention belongs. do. Therefore, the scope of the present invention should not be limited to the described embodiments and should not be defined, and should be defined by not only the claims to be described later, but also those equivalent to these claims.

Claims (17)

abrasive particles;
Polysilicon polishing control agent;
polysilicon surface improving agent; and
An oxide polishing control agent containing an organic sulfonic acid compound;
including,
The polysilicon polishing control agent includes an amine-based compound,
The polysilicon surface improving agent includes an organic acid, an inorganic acid, or both,
The amine-based compound,
Phenylethylamine, Methoxyphenethylamine, Aminopropylaniline, Bebzylamine, Dibenzylamine, N-Methylbenzylamine, Dimethylbenzylamine ( Dimethylbenzylamine), 4-benzylpiperidine, dibenzylethanolamine, tribenzylamine, and ethylcyclohexylamine containing at least one selected from the group consisting of person,
A polishing slurry composition for wafers containing polysilicon.
delete delete According to claim 1,
The polysilicon polishing control agent is 0.001% by weight to 10% by weight of the polishing slurry composition of the wafer containing polysilicon, the polishing slurry composition of the wafer containing polysilicon.
According to claim 1,
The organic acids include citric acid, malic acid, maleic acid, malonic acid, oxalic acid, succinic acid, lactic acid, tartaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, acetic acid, butyric acid, At least one selected from the group consisting of capric acid, caproic acid, caprylic acid, glutaric acid, glycolic acid, formic acid, lauric acid, myristic acid, palmitic acid, phthalic acid, propionic acid, pyruvic acid, stearic acid and valeric acid including,
The inorganic acid includes at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrobromic acid, iodic acid, hydrochloric acid and perchloric acid, polishing slurry composition for a wafer containing polysilicon.
According to claim 1,
The polysilicon surface improving agent is 0.001% to 2% by weight of the polysilicon-containing wafer polishing slurry composition, the polishing slurry composition for a wafer containing polysilicon.
According to claim 1,
A pH adjusting agent comprising an acidic substance, a basic substance, or both; further comprising,
The acidic substance is nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, hydrobromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, At least one selected from the group consisting of salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, lactic acid, aspartic acid, tartaric acid and salts thereof,
The basic material is ammonia, ammonium methyl propanol (AMP), tetramethyl ammonium hydroxide (TMAH), ammonium hydroxide, potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, and cesium hydroxide , Sodium hydrogen carbonate, sodium carbonate, imidazole, and a polishing slurry composition for a wafer containing polysilicon, comprising at least one selected from the group consisting of imidazole and salts thereof.
According to claim 1,
The abrasive particles,
It includes at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic or inorganic material, and the metal oxide in a colloidal state,
The metal oxide includes at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia, polishing slurry composition for a wafer containing polysilicon.
According to claim 1,
The polishing slurry composition of a wafer containing polysilicon, wherein the abrasive particles are surface-substituted with a sulfone group, a carboxyl group, or both.
According to claim 1,
The polishing slurry composition of a wafer containing polycrystalline silicon, wherein the abrasive particles include particles having a single size of 10 nm to 100 nm or mixed particles having two or more different sizes of 10 nm to 100 nm.
According to claim 1,
The abrasive particles are 0.1% to 10% by weight of the polishing slurry composition of the wafer containing polysilicon, the polishing slurry composition of the wafer containing polysilicon.
According to claim 1,
The polishing slurry composition for a wafer containing polycrystalline silicon, wherein the pH of the polishing slurry composition for a wafer containing polycrystalline silicon is in the range of 6 to 10.
According to claim 1,
The organic sulfonic acid-based compound is camphorsulfonic acid (CSA), dodecyl organic acid (DBSA), acrylamidomethylsulfonic acid (AMPSA), p-toluenesulfonic acid (PTSA), methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, A polishing slurry composition for a wafer containing polysilicon, comprising at least one selected from the group consisting of naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, dinonylnaphthalenedisulfonic acid, benzenesulfonic acid and dodecylbenzenedisulfonic acid.
According to claim 1,
The oxide polishing control agent is 0.001% by weight to 10% by weight of the polishing slurry composition of the wafer containing polysilicon, the polishing slurry composition of the wafer containing polysilicon.
According to claim 1,
A polishing slurry composition for a wafer containing polysilicon having a negative zeta potential.
According to claim 1,
A polishing slurry composition for a wafer containing polysilicon, having a zeta potential of -1 mV to -100 mV.
According to claim 1,
The polishing rate of the polycrystalline silicon film within a polishing time of more than 0 seconds to 30 seconds is 15 Å / min or more, a polishing slurry composition for a wafer containing polycrystalline silicon.