KR20190059740A - A deposition mask of metal material for oled pixel deposition and oled display panel fabrication method - Google Patents

Abstract

According to an embodiment, a metal deposition mask for the deposition of OLED pixels includes a deposition mask and a non-deposition part. The deposition part includes: a plurality of effective parts placed at a distance from each other in a longitudinal direction; and a noneffective part excluding the effective parts. The effective parts include: a plurality of small surface holes formed on a side of the metal material; a plurality of large surface holes formed on the other side which is opposite to the side; a plurality of through holes connecting the small and large surface holes respectively; and an island part formed on the other side of the metal material, and located between the through holes. The large surface holes have a first cross-section inclination angle in a first direction and a second cross-section inclination angle in a second direction, which intersects with the first direction, with respect to the side. The first and second cross-section inclination angles are 35-55°, and the first cross-section inclination angle is smaller than the second cross-section inclination angle.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a mask for depositing a metal material and an OLED panel manufacturing method for depositing OLED pixels,

The present embodiment relates to a mask for depositing a metal material and an OLED panel manufacturing method for depositing OLED pixels capable of improving the deposition performance while securing rigidity to prevent deformation of length.

Display devices are used in various devices. For example, display devices are used not only for small devices such as smart phones and tablet PCs, but also for large devices such as TVs, monitors, public displays (PDs) and the like. In particular, in recent years, there is an increasing demand for ultrahigh resolution UHD (UHD, UHD) over 500 PPI (Pixel Per Inch), and high resolution display devices are being applied to small devices and large devices. Accordingly, there is a growing interest in techniques for implementing low power and high resolution.

A commonly used display device can be roughly divided into an LCD (Liquid Crystal Display) and an OLED (Organic Light Emitting Diode) according to a driving method.

An LCD is a display device driven using a liquid crystal. The LCD has a structure in which a light source including a cold cathode fluorescent lamp (CCFL) or a light emitting diode (LED) is disposed under the liquid crystal. And is driven by adjusting the amount of light emitted from the light source using the liquid crystal disposed.

Further, the OLED is a display device which is driven using organic materials, and a separate light source is not required, and the organic material itself can function as a light source and can be driven with low power. In addition, OLEDs are attracting attention as a display device capable of expressing an infinite contrast ratio, having a response speed that is about 1000 times faster than that of an LCD, and excellent viewing angle, thereby being able to replace an LCD.

Particularly, in the OLED, the organic material contained in the light emitting layer can be deposited on the substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed on the deposition mask So that it can function as a pixel. The vapor deposition mask is generally made of Invar alloy metal sheet including iron (Fe) and nickel (Ni). At this time, one surface and the other surface of the metal plate may have through-holes passing through the one surface and the other surface, and the through-holes may be formed at positions corresponding to the pixel patterns. Accordingly, organic materials such as red, green, and blue can be deposited on the substrate through the through holes of the metal plate, and a pixel pattern can be formed on the substrate.

At this time, when the inclination angle of the face-to-face hole in the through hole formed in the vapor deposition mask is smaller than the predetermined range, the thickness of the rib connecting the through holes becomes thin. As a result, the rigidity of the mask for vapor deposition is lowered, resulting in the deformation of the mask, such as tensile deformation, total pitch deformation, and sagging. In addition, the shape of the mask pattern and the uniformity of the positions of the through holes may be reduced in accordance with the deformation of the length, and the diameters of the through holes may not be uniform, which may result in lower pattern deposition efficiency and poor deposition.

When the inclination angle of the facing surface in the through hole formed in the vapor deposition mask is larger than the predetermined range, some of the organic substances may not pass through the through hole when the organic material is deposited on the substrate. In particular, in the through hole located in a direction not perpendicular to the moving direction of the organic material deposition container, the moving distance of the organic material is longer than the moving distance of the organic material deposition container, There is a problem in that it is deposited on the inner surface of the opposing face of the island portion or the through hole formed between the adjacent through holes.

In particular, there is a need for a new structure of a mask for vapor deposition and a method for manufacturing the same, which can uniformly form a pattern of high resolution or super high resolution (UHD class) of 500 PPI or more without vapor deposition defect while preventing various length deformation.

An embodiment of the present invention is to provide a vapor deposition mask capable of securing rigidity and minimizing length deformation such as total pitch deformation and sagging at the time of pulling.

In addition, the embodiment is intended to provide a vapor deposition mask capable of uniformly depositing an OLED field pattern regardless of the position of the through hole while securing rigidity.

It is to be understood that the technical objectives to be achieved by the embodiments are not limited to the technical matters mentioned above and that other technical subjects not mentioned are apparent to those skilled in the art to which the embodiments proposed from the following description belong, It can be understood.

The deposition mask may include a deposition unit and a non-deposition unit. The deposition unit may include a plurality of effective units spaced apart from each other in the longitudinal direction, Wherein the effective portion includes a plurality of small-sized balls formed on one surface of the metallic material; A plurality of facing balls formed on a surface opposite to the one surface of the metallic material; A plurality of through holes communicating with the face-face holes and the face-face holes, respectively; And an island portion formed on the other surface of the metal material and positioned between the plurality of through holes, wherein the facing surface has a first inclination angle in a first direction and a second inclination angle in a first direction, Wherein the inclination angle of the first section and the inclination angle of the second section are within the range of 35 to 55 占 and the inclination angle of the first section is smaller than the inclination angle of the second section.

In addition, the valid portion may include a rib having a lower height than the island portion, and the rib may include a first rib positioned between adjacent ones of the plurality of through holes in the first direction; And a second rib positioned between adjacent ones of the plurality of through holes in the second direction, wherein the height of the first rib is smaller than the height of the second rib.

The distance from the center of the through hole to the first rib is larger than the distance from the center of the through hole to the second rib.

The sphere surface may include a first height in a first cross-section in the first direction and a second height in a second cross-section in the second direction, the first height being greater than the second height small.

The second height is 3.5 탆 to 4.0 탆, and the first height is 2.5 탆 to 3.0 탆.

The first inclination angle of the first section is in a range of 35 to 45 degrees, and the second section inclination angle is in a range of 45 to 55 degrees.

The effective portion may include a central region in which the through hole is disposed and an outer peripheral region disposed in an outer periphery of the central region, the outer peripheral region having a first inclination angle of the first section in the first direction, A second section inclination angle in the second direction, and a third section inclination angle in the one direction, wherein the third section inclination angle is larger than the first section inclination angle.

The inclination angle of the first end face of the through hole of the outer region is a sectional inclination angle of the first direction toward the central region, and the inclination angle of the third end face of the through hole of the outer region is opposite to the direction toward the center region Direction in the first direction toward the ungrooved portion.

Further, the width of the island portion in the first direction is larger than the width in the second direction.

The through-hole has a diameter of 33 mu m or less and a resolution of 500PPI or more with an interval of 48 mu m or less between the through-holes.

Further, the first direction is a tensile direction.

In addition, the second direction is a direction perpendicular to the longitudinal direction.

The first direction is the same as the longitudinal direction.

According to the embodiment, the face-to-face hole of the through-hole has a first end face inclination angle in the longitudinal direction and a second end face inclination angle larger than the first end face inclination angle in the width direction, It is possible to increase the thickness of the ribs arranged in the longitudinal direction by the difference of the inclination angles of the two sections, and the rigidity of the vapor deposition mask can be ensured accordingly. Also, since the rigidity of the vapor deposition mask is secured, the length variation can be minimized, and the pattern deposition efficiency can be improved by increasing the shape of the mask pattern and the uniformity of the positions of the through holes.

In addition, according to the embodiment, it is possible to uniformly deposit the OLED pixel pattern in all the regions regardless of the positions of the through holes by reducing the inclination angle of the facing surfaces of the through holes in the direction perpendicular to the moving direction of the organic material deposition container.

1 is a perspective view showing an organic material deposition apparatus including an evaporation mask according to an embodiment.
2 is a cross-sectional view showing an organic substance deposition apparatus including the deposition mask 100 according to the embodiment.
Fig. 3 is a view showing that the vapor deposition mask 100 according to the embodiment is stretched to be mounted on the mask frame 200. Fig.
4 is a view showing a plurality of deposition patterns formed on the substrate 300 through a plurality of through holes of the deposition mask 100. FIG.
FIG. 5 is a plan view of the vapor deposition mask 100 according to the embodiment.
6 is a plan view showing an effective part of the vapor deposition mask 100 according to the first embodiment.
7 is another plan view of the vapor deposition mask according to the embodiment.
8 is another plan view of the deposition mask according to the embodiment.
FIG. 9 is a diagram showing overlapping sections of respective sections to explain height differences and magnitudes between a section in the AA 'direction and a section in the BB' direction in FIG. 6.
FIG. 10 is a view showing a cross-sectional view in the direction of BB 'in FIG. 6; FIG.
11 is a view showing a cross-sectional view in the CC 'direction of FIG.
12 is a cross-sectional view in the DD 'direction of FIG.
13 is a plan view showing an effective portion of the deposition mask 100 according to the second embodiment.
FIG. 14 is a cross-sectional view showing the second through-hole in FIG. 13, and FIG. 15 is a cross-sectional view showing the third through-hole in FIG.
16 is a view showing a method of manufacturing the deposition mask 100 according to the embodiment.
17 and 18 are views showing a deposition pattern formed through the deposition mask according to the embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description with reference to the accompanying drawings, the same reference numerals denote the same elements regardless of the reference numerals, and redundant description thereof will be omitted. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

Also, in the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under / under quot; under " includes all that is formed directly or through another layer. The criteria for top / bottom or bottom / bottom of each layer are described with reference to the drawings.

Also, when a part is referred to as being "connected" to another part, it includes not only a case of being "directly connected" but also a case of being "indirectly connected" with another member in between. Also, when an element is referred to as " comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, an evaporation mask according to an embodiment will be described with reference to the drawings.

1 to 4 are conceptual diagrams illustrating a process of depositing an organic material on a substrate 300 using the deposition mask 100 according to the embodiment.

FIG. 1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to an embodiment, FIG. 2 is a cross-sectional view illustrating an organic material deposition apparatus including a deposition mask 100 according to an embodiment, FIG. And the mask for vapor deposition 100 according to the example is pulled to be mounted on the mask frame 200. As shown in Fig. 4 is a view showing a plurality of deposition patterns formed on the substrate 300 through a plurality of through holes of the deposition mask 100. FIG.

1 to 4, the organic material deposition apparatus may include an evaporation mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The vapor deposition mask 100 may include a metal. For example, the vapor deposition mask may include iron (Fe) and nickel (Ni).

The deposition mask 100 may include a plurality of through holes TH in an effective portion for deposition. The vapor deposition mask 100 may be a substrate for an evaporation mask including a plurality of through holes TH. At this time, the through holes may be formed to correspond to patterns to be formed on the substrate. The vapor deposition mask 100 may include an ungrooved portion other than the effective portion including the deposition region.

The mask frame 200 may include an opening 205. The plurality of through holes of the vapor deposition mask 100 may be disposed on a region corresponding to the opening 205 of the mask frame 200. Accordingly, the organic material supplied to the organic material deposition container 400 can be deposited on the substrate 300. The vapor deposition mask 100 may be disposed and fixed on the mask frame 200. For example, the vapor deposition mask 100 may be tensioned at a constant tension and secured by welding on the mask frame 200.

That is, the mask frame 200 includes a plurality of frames 201, 202, 203, and 204 surrounding the opening 205. The plurality of frames 20, 202, 203, 204 may be connected to each other. The mask frame 200 includes a first frame 201 and a second frame 202 facing each other in the X direction and extending in the Y direction and facing each other in the Y direction and extending in the X direction A third frame 203 and a fourth frame 204. The first frame 201, the second frame 202, the third frame 203, and the fourth frame 204 may be square frames connected to each other. The mask frame 200 may be made of a material having a small deformation at the time of welding, such as a metal having a high rigidity.

The vapor deposition mask 100 may be stretched in directions opposite to each other at an edge disposed at the outermost periphery of the vapor deposition mask 100. The vapor deposition mask 100 may be pulled in a direction opposite to the one end of the vapor deposition mask 100 and the other end opposite to the one end in the longitudinal direction of the vapor deposition mask 100. Therefore, the tensile direction, the X-axis direction, and the longitudinal direction of the vapor deposition mask of the vapor deposition mask 100 may all be the same direction.

 One end and the other end of the vapor deposition mask 100 may be arranged parallel to each other. One end of the vapor deposition mask 100 may be one of four side surfaces disposed at the outermost side of the vapor deposition mask 100. For example, the vapor deposition mask 100 may be tensioned with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the vapor deposition mask can be tensioned on the mask frame 200 with a tensile force of 0.4 kgf to about 1.5 kgf. Accordingly, the stress of the vapor deposition mask 100 can be reduced. However, the embodiment is not limited to this, and may be fixed on the mask frame 200 by being pulled with various tensile forces to reduce the stress of the deposition mask 100.

Then, the vapor deposition mask 100 may fix the vapor deposition mask 100 to the mask frame 200 by welding the unaffected portion of the vapor deposition mask 100. Next, a part of the vapor deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for organic material deposition for OLED pixel patterns. Organic patterns of red, green, and blue may be formed on the substrate 300 to form pixels that are three primary colors of light. That is, RGB patterns may be formed on the substrate 300.

The organic material deposition container 400 may be a crucible. An organic material may be disposed inside the crucible. The organic material deposition container 400 may be moved in the vacuum chamber 500. That is, the organic material deposition container 400 can move in the Y axis direction in the vacuum chamber 500. That is, the organic material deposition container 400 can move in the width direction of the deposition mask 100 in the vacuum chamber 500. That is, the organic material deposition container 400 can move in a direction perpendicular to the tensile direction of the deposition mask 100 in the vacuum chamber 500.

The organic material may be deposited on the substrate 100 as the heat source and / or current is supplied to the crucible, which is the organic material deposition container 400, in the vacuum chamber 500.

Referring to FIG. 4, the deposition mask 100 may include a first surface 101 and a second surface 102 opposite to the first surface.

The one face 101 of the vapor deposition mask 100 may include a small-hole hole V1, and the other face may include a face-to-face hole V2. For example, each of the one surface 101 and the other surface 102 of the vapor deposition mask 100 may include a plurality of surface voids V1 and a plurality of facing surfaces V2.

In addition, the vapor deposition mask 100 may include a through hole TH. The through hole TH may be communicated with a communication part CA through which the boundary between the small-sized hole V1 and the facing hole V2 is connected.

In addition, the deposition mask 100 may include a first etching surface ES1 in the small-sized hole V1. The vapor deposition mask 100 may include a second etching surface ES2 and a third etching surface ES3 in the facing surface V2. The through hole TH is formed in the first etching surface ES1 in the small hole V1 and the second etching surface ES2 and the third etching surface ES3 in the facing hole V2, . For example, the first etching surface ES1 in one small hole V1 communicates with the second etching surface ES2 and the third etching surface ES3 in one facing hole V2, Can be formed. Accordingly, the number of the through holes TH may correspond to the number of the small-hole holes V1 and the number of the facing holes V2.

On the other hand, the second etching surface ES2 in the facing surface V2 may include a plurality of sub second etching surfaces ES2. That is, the second etching surface ES2 in the facing surface V2 may include a pair of first sub-second etching surfaces and a second sub-second etching surface facing each other in the longitudinal direction. The third etching surface ES3 of the facing surface V2 may include a pair of first sub third etching surfaces and second sub third etching surfaces facing in the width direction.

The width of the face-to-face V2 may be greater than the width of the small-plane hole V1. The width of the face-face hole V1 is measured on one face 101 of the face mask 100 and the width of the face-face V2 is measured on the face 102 of the face mask 100 .

The small-sized hole (V1) may be disposed toward the substrate 300. The small-sized hole V1 may be disposed close to the substrate 300. Accordingly, the small hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

The facing surface (V2) may be disposed toward the organic material deposition container (400). Accordingly, the face-to-face V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the small-sized hole V2, which is wider than the face- A fine pattern can be formed on the substrate 300 quickly.

FIG. 5 is a plan view of the vapor deposition mask 100 according to the embodiment. 5, the vapor deposition mask 100 will be described in more detail.

Referring to FIG. 5, the deposition mask 100 according to the embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition region DA may be a region for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern region may be a region including a small-plane hole V1, a large-diameter hole V2, a through hole TH and an island portion IS, and the non-pattern region may include a small- ), The through hole (TH), and the island portion (IS).

In addition, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, and AA3 capable of forming a plurality of deposition patterns. The pattern region may include the plurality of valid portions AA1, AA2, and AA3.

The plurality of effective portions AA1, AA2, and AA3 may include a first effective portion AA1, a second effective portion AA2, and a third effective portion AA3. Here, one deposition area DA may be any one of the first effective part AA1, the second effective part AA2, and the third effective part AA3.

In the case of a small display device such as a smart phone, any one of the plurality of deposition regions included in the deposition mask 100 may be for forming one display device. Accordingly, the single mask for vapor deposition 100 can include a plurality of effective portions, so that a plurality of display devices can be formed at the same time. Therefore, the vapor deposition mask 100 according to the embodiment can improve the process efficiency.

Alternatively, in the case of a large-sized display device such as a television, a plurality of effective portions included in one deposition mask 100 may be a part for forming one display device. At this time, the plurality of valid portions may be for preventing deformation due to the load of the mask.

The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100. [ Separation regions IA1 and IA2 may be disposed between adjacent effective portions. The isolation regions IA1 and IA2 may be spaced apart from a plurality of effective portions. For example, the first isolation region IA1 may be disposed between the first valid portion AA1 and the second valid portion AA2. A second isolation region IA2 may be disposed between the second effective portion AA2 and the third effective portion AA3. That is, the adjacent effective regions can be distinguished from each other by the isolation regions IA1 and IA2, and one mask mask 100 can support a plurality of effective regions.

The deposition mask 100 may include a non-deposition region NDA on both sides of the deposition region DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include the non-deposition region NDA on both sides of the deposition region DA in the horizontal direction.

The non-deposition region NDA of the deposition mask 100 may be a region not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. [ In addition, the non-deposition region NDA may include half etching portions HF1 and HF2 and an open portion.

As described above, the deposition region DA may be a region for forming a deposition pattern, and the non-deposition region NDA may be a region not involved in deposition. At this time, a surface treatment layer different from the material of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100, and the surface treatment layer of the non-deposition area NDA may not be formed . Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only one of the one surface 101 or the other surface 102 of the vapor deposition mask 100. Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only a part of one surface 101 of the mask for vapor deposition 100. For example, one or both of the surface 101 and / or the other surface 102 of the vapor deposition mask 100 and the vapor deposition mask 100 may be entirely and / or partially covered with a surface treatment layer having a lower etching rate than the material of the metal plate 10 So that the etch factor can be improved. Accordingly, the vapor deposition mask 100 of the embodiment can form a through hole having a small size with high efficiency. For example, the vapor deposition mask 100 of the embodiment may have a resolution of 400 PPI or more. Specifically, the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may include an element different from the material of the metal plate 10, or may include a metal material having a different composition of the same element. Hereinafter, the manufacturing process of the evaporation mask will be described in detail.

The non-deposition region NDA may include half etching portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etching area HF1 on one side of the deposition area DA, And a second half-etching portion HF2 on the other side opposite to the one side. The first half etching part HF1 and the second half etching part HF2 may be regions where grooves are formed in the depth direction of the deposition mask 100. [ The first half etching part HF1 and the second half etching part HF2 can have grooves having a thickness of about 1/2 of the thickness of the deposition mask so that stress can be dispersed during the tensile stress of the deposition mask 100 have. The half etching portions HF1 and HF2 are preferably formed symmetrically with respect to the center of the evaporation mask 100 in the X-axis direction or in the Y-axis direction. This makes it possible to uniformly control the tensile force in both directions.

The half-etching portions HF1 and HF2 may be formed in various shapes. The half etching portions HF1 and HF2 may include a semicircular groove. The grooves may be formed on at least one of the one surface 101 of the vapor deposition mask 100 and the other surface 102 opposite to the one surface 101. Preferably, the half-etched portions HF1 and HF2 may be formed on a surface corresponding to the small-hole surface V1. Accordingly, the half-etching portions HF1 and HF2 can be formed simultaneously with the small-plane hole V1, thereby improving the process efficiency. In addition, the half-etching portions HF1 and HF2 can disperse stress that may be caused by a difference in size between facing faces V2. However, the embodiment is not limited thereto, and the half-etching portions HF1 and HF2 may have a rectangular shape. For example, the first half-etching portion HF1 and the second half-etching portion HF2 may have a rectangular or square shape. Accordingly, the vapor deposition mask 100 can effectively disperse the stress.

In addition, the half-etching portions HF1 and HF2 may include a curved surface and a flat surface. The plane of the first half etching part HF1 may be disposed adjacent to the first effective part AA1 and the plane may be disposed horizontally with the longitudinal end of the evaporation mask 100. [ The curved surface of the first half-etching part HF1 may be convex toward one end in the longitudinal direction of the evaporation mask 100. [ For example, the curved surface of the first half-etching part HF1 may be formed so that a half of the length of the mask in the vertical direction corresponds to the radius of the semicircular shape.

The plane of the second half-etching portion HF2 may be disposed adjacent to the third effective portion AA3, and the plane may be disposed horizontally with respect to the longitudinal direction end of the deposition mask 100 have. The curved surface of the second half-etching portion HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100. For example, the curved surface of the second half-etching portion HF2 may be formed so that a half of the length of the mask in the vertical direction corresponds to the radius of the semicircular surface.

The half etching portions HF1 and HF2 can be formed at the same time when forming the small-plane hole V1 or the facing hole V2. This can improve process efficiency. In addition, the grooves formed on one surface 101 and the other surface 102 of the evaporation mask 100 may be offset from each other. Whereby the half etching portions HF1 and HF2 may not penetrate.

In addition, the deposition mask 100 according to the embodiment may include four half-etching portions. For example, the half etching portions HF1 and HF2 may include even-numbered half etching portions HF1 and HF2, so that the stress can be more efficiently dispersed.

In addition, the half-etching portions HF1 and HF2 may be further formed on the unaffected portion UA of the deposition region DA. For example, the half-etching portions HF1 and HF2 may be disposed in a plurality of the non-fluxing portions UA dispersed in all or a part of the UA to disperse the stress in tension of the vapor deposition mask 100. [

The half etching portions HF1 and HF2 may also be formed in the peripheral areas of the frame fixing areas FA1 and FA2 and / or the frame fixing areas FA1 and FA2. Accordingly, when the deposition mask 100 is formed on the mask frame 200 and / or when the deposition mask 100 is deposited on the mask frame 200, Can be uniformly dispersed. Accordingly, the vapor deposition mask 100 can be maintained to have a uniform through-hole.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etching portions. In detail, the deposition mask 100 according to the embodiment includes the half-etching portions HF1 and HF2 only in the non-deposition region NDA, but is not limited thereto. The deposition region DA and the non- NDA) may further include a plurality of half-etching portions. Accordingly, the stress of the vapor deposition mask 100 can be uniformly dispersed.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. [ For example, a first frame fixing area FA1 may be formed on one side of the deposition area DA and a second frame fixing area FA2 may be formed on the other side opposite to the one side of the deposition area DA . The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

The frame fixing areas FA1 and FA2 are disposed between the half etching portions HF1 and HF2 of the non-deposition region NDA and the effective portions of the deposition region DA adjacent to the half etching portions HF1 and HF2. . For example, the first frame fixing area FA1 is formed in the first half etching portion HF1 of the non-deposition region NDA and the first half etching portion HF2 of the deposition region DA adjacent to the first half etching portion HF1. 1 valid portion AA1. For example, the second frame fixing area FA2 may be formed in the second half etching portion HF2 of the non-deposition region NDA and the second half etching portion HF2 of the deposition region DA adjacent to the second half etching portion HF2. 3 valid portion AA3. Thus, a plurality of deposition pattern units can be fixed at the same time.

In addition, the deposition mask 100 may include semicircular openings at both ends in the horizontal direction X. For example, the non-deposited region NDA may include an open portion. In detail, the non-deposition area NDA may include one semicircular open part at each end in the horizontal direction. For example, the non-deposition area NDA of the vapor deposition mask 100 may include an open part having a center in the vertical direction Y on one side in the horizontal direction. For example, the non-deposition area NDA of the vapor deposition mask 100 may include an open part whose center is opened in the vertical direction on the opposite side to the one side in the horizontal direction. That is, both ends of the vapor-deposition mask 100 may include open portions at half the length in the vertical direction. For example, both ends of the vapor deposition mask 100 may be shaped like a horse hoof.

At this time, the curved surface of the open portion may be directed to the half-etching portions HF1 and HF2. Accordingly, the opening portions located at both ends of the deposition mask 100 are spaced apart from the first half-etching portions HF1 and HF2 or the second half-etching portions HF1 and HF2 and the vertical direction length of the deposition mask 100 The separation distance may be the shortest at a half of the distance.

The length h2 in the vertical direction of the open portion may correspond to the length h1 in the vertical direction of the first half-etching portion HF1 or the second half-etching portion HF2. Accordingly, when the vapor deposition mask 100 is stretched, the stress can be evenly dispersed, and the wave deformation of the vapor deposition mask can be reduced. Therefore, the vapor deposition mask 100 according to the embodiment can have a uniform through-hole, and the deposition efficiency of the pattern can be improved. The vertical length h1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be about 80% to about 200% of the length h2 of the open portion in the vertical direction (H1: h2 = 0.8 to 2: 1). The length h1 in the vertical direction of the first half-etching portion HF1 or the second half-etching portion HF2 may be about 90% to about 150% of the length h2 in the vertical direction of the open portion h1: h2 = 0.9 to 1.5: 1). The length h1 in the vertical direction of the first half-etching portion HF1 or the second half-etching portion HF2 may be about 95% to about 110% of the length h2 in the vertical direction of the open portion h1: h2 = 0.95 to 1.1: 1).

Further, although not shown in the figure, the half-etched portion may be further formed in the unaffected portion UA of the deposition region DA. The half-etching portion may be disposed in a plurality of the non-legible portions UA dispersed in all or a part of the non-legible portion UA in order to disperse the stress during tensioning of the vapor-deposition mask 100.

The half etching portions HF1 and HF2 may also be formed in the peripheral areas of the frame fixing areas FA1 and FA2 and / or the frame fixing areas FA1 and FA2. Accordingly, the stress of the vapor deposition mask 100, which is generated when the vapor deposition mask 100 is fixed to the mask frame 200, and / or when depositing the deposition material after fixing the vapor deposition mask 100 to the frame, It can be uniformly dispersed. Accordingly, the vapor deposition mask 100 can be maintained to have a uniform through-hole.

The vapor deposition mask 100 may include a plurality of effective portions AA1, AA2, and AA3 spaced apart in the longitudinal direction and a non-effective portion UA other than the effective portion. In detail, the deposition area DA may include a plurality of effective portions AA1, AA2, and AA3 and a non-effective portion UA other than the effective portion AA.

The effective portions AA1, AA2, and AA3 include a plurality of small-hole holes V1 formed on one surface of the deposition mask 100, a plurality of facing holes V2 formed on the other surface opposite to the one surface, And a through hole TH formed by a communicating portion CA to which a boundary between the hole V1 and the facing hole V2 is connected.

The effective portions AA1, AA2, and AA3 may include an island portion IS that supports a plurality of through holes TH.

The island portion IS may be positioned between adjacent through holes TH of the plurality of through holes TH. That is, the areas other than the through holes TH in the effective portions AA1, AA2, and AA3 of the vapor deposition mask 100 may be the island portions IS.

The island portion IS may refer to a portion of the deposition mask not etched on one side 101 or the other side 102 of the effective portion. The island portion IS may be an unetched region between the through hole TH and the through hole TH at the other surface 102 on which the facing surface V2 of the effective portion of the vapor deposition mask 100 is formed. have. Therefore, the island portion IS may be disposed parallel to one surface 101 of the deposition mask 100. In detail, the upper surface of the island portion IS may be disposed parallel to the one surface 101.

The island portion IS may be disposed on the same plane as the other surface 102 of the deposition mask 100. Accordingly, the island portion IS may have the same thickness as at least a portion of the non-fatigue portion on the other surface 102 of the vapor deposition mask 100. [ In detail, the island portion IS may have the same thickness as the unetched portion of the non-affinity portion 102 on the other side 102 of the deposition mask 100. Accordingly, the deposition uniformity of the subpixel can be improved through the deposition mask 100.

Alternatively, the island portion IS may be disposed in a plane parallel to the other surface 102 of the deposition mask 100. Here, the parallel plane means that the other surface of the deposition mask 100 in which the island portion IS is disposed by the etching process around the island portion IS and the other surface of the mask portion 100 in the non- And the height difference of the other surface is +/- 1 占 퐉 or less.

The width (W1) in the longitudinal direction and the width in the horizontal direction of the island portion (IS) may be different from each other. That is, the width (W1) in the longitudinal direction of the island portion (IS) may be larger than the width (W2) in the horizontal direction.

The vapor deposition mask 100 may include an unaffected portion UA disposed on the outer side of the effective portions AA1, AA2, and AA3. The effective portion AA may be an inner region when the outer peripheries of the outermost through holes for depositing the organic material among the plurality of through holes are connected. The non-dielectrophoretic unit UA may be an outer region of the plurality of through holes when the outer peripheries of the outermost through holes for depositing the organic material are connected.

The unaffected portion UA is a region excluding the effective portions AA1, AA2, and AA3 of the deposition region DA and the non-deposition region NDA. The non-divergent portion UA may include outer regions OA1, OA2, and OA3 surrounding the outer portions of the valid portions AA1, AA2, and AA3.

The number of the outer areas OA1, OA2, and OA3 may correspond to the number of the valid parts AA1, AA2, and AA3. That is, one valid part may include one outer area that is separated from the end of the valid part by a predetermined distance in the horizontal direction and the vertical direction, respectively.

The first valid portion AA1 may be included in the first outer area OA1. The first effective portion AA1 may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the outer periphery of the first effective portion AA1 may include a plurality of through holes.

For example, the plurality of through holes included in the first outer region OA1 are for reducing the etching failure of the through holes TH located at the outermost portion of the first effective portion AA1. Accordingly, the vapor deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through holes located in the effective portions AA1, AA2, and AA3, and improve the quality of the vapor deposition pattern manufactured thereby have.

The shape of the through hole TH of the first effective part AA1 may correspond to the shape of the through hole TH of the first outer area OA1. Accordingly, the uniformity of the through hole TH included in the first effective portion AA1 can be improved. For example, the shape of the through hole TH of the first effective part AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited to this, and the through hole TH may have various shapes such as a diamond pattern, an elliptical pattern, and the like.

The second valid portion AA2 may be included in the second outer area OA2. The second effective part AA2 may have a shape corresponding to the first effective part AA1. The second outer area OA2 may have a shape corresponding to the first outer area OA1.

The second outer area OA2 may further include two through holes in the horizontal direction and the vertical direction from the through hole located at the outermost of the second effective part AA2. For example, in the second outer area OA2, two through holes may be arranged in a row in the horizontal direction at the upper and lower positions of the through holes located at the outermost of the second effective part AA2. For example, in the second outer area OA2, two through holes may be arranged in a line in the vertical direction on the left side and the right side of the through hole located at the outermost side of the second effective part AA2. The plurality of through holes included in the second outer region OA2 are for reducing the etching failure of the through holes located at the outermost portion of the effective portion. Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective portion, thereby improving the quality of the vapor deposition pattern manufactured through the mask.

The third valid part AA3 may be included in the third outer area OA3. The third effective portion AA3 may include a plurality of through holes for forming an evaporation material. The third outer area OA3 surrounding the outer periphery of the third effective part AA3 may include a plurality of through holes.

The third effective part AA3 may have a shape corresponding to the first effective part AA1. The third outer area OA3 may have a shape corresponding to the first outer area OA1.

The through holes TH included in the effective portions AA1, AA2, and AA3 may have a shape partially corresponding to the through holes included in the non-effective portion UA. The through holes included in the effective portions AA1, AA2, and AA3 may have different shapes from the through holes located at the edge portions of the non-effective portion UA. Accordingly, it is possible to control the difference in the stress depending on the position of the deposition mask 100.

FIG. 6 is a plan view showing the effective part of the vapor deposition mask 100 according to the first embodiment, FIG. 7 is another plan view of the vapor deposition mask according to the embodiment, and FIG. 8 is a cross- Fig. 5 is another plan view of the mask for deposition according to the present invention;

6 to 8 are plan views of any one of the first effective portion AA1, the second effective portion AA2 and the third effective portion AA3 of the vapor deposition mask 100 according to the embodiment . 6 to 8 illustrate the shape of the through hole TH and the arrangement between the through holes TH. The vapor deposition mask 100 according to the embodiment has the through hole TH shown in the drawing, The present invention is not limited to this.

6 to 8, the vapor deposition mask 100 may include a plurality of through holes TH. At this time, the through holes TH may be arranged in a line or may be staggered according to the direction. For example, the through holes TH may be arranged in a row in the vertical axis and the horizontal axis, and may be arranged in a row in the vertical axis or the horizontal axis.

First, referring to FIG. 6, the vapor deposition mask 100 may include a plurality of through holes TH. At this time, the plurality of through holes TH may have a circular shape. The through hole TH may have a diameter Cx in the horizontal direction and a diameter Cy in the vertical direction and the diameter Cx of the through hole TH in the horizontal direction and the diameter Cy) values may correspond to each other.

The through holes TH may be arranged in a line according to the direction. For example, the through holes TH may be arranged in a row in the vertical axis and the horizontal axis.

The first through hole TH1 and the second through hole TH2 may be arranged in a line on the horizontal axis and the third through hole TH1 and the fourth through hole TH4 may be arranged in a line on the vertical axis. have.

The first through hole TH1 and the third through hole TH3 may be arranged in a row on the vertical axis and the second through hole TH2 and the fourth through hole TH4 may be arranged in a row on the horizontal axis. have.

That is, when the through holes TH are arranged in a row on the vertical axis and the horizontal axis, respectively, the island portions IS are positioned between the two adjacent through holes TH in the diagonal direction, can do. That is, the island portion IS may be positioned between two adjacent through holes TH located in diagonal directions with respect to each other.

For example, the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. The island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island portion IS may be positioned in the inclination angle direction of about +45 degrees and the inclination angle direction of about -45 degrees, respectively, based on the horizontal axis crossing the two adjacent through holes. Here, the direction of the inclination angle of about +/- 45 may mean the diagonal direction between the abscissa and the ordinate, and the inclination angle in the diagonal direction may be measured on the same plane of the abscissa and the ordinate.

Referring to FIG. 7, the other mask for vapor deposition 100 according to the embodiment may include a plurality of through holes. At this time, the plurality of through holes may have an elliptical shape. In detail, the diameter Cx in the horizontal direction of the through hole TH and the diameter Cy in the vertical direction may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be larger than the diameter Cy in the vertical direction. However, the embodiment is not limited to this, and the through-hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through holes TH may be arranged in a line in one axis of the longitudinal axis or in the transverse axis and may be staggered in the other axis.

The first through hole TH1 and the second through hole TH2 may be arranged in a line on the abscissa axis and the third through hole TH1 and the fourth through hole TH4 may be arranged in the first through hole TH1. And the second through hole (TH2), respectively.

In the case where the through holes TH are arranged in a row in one of the longitudinal and transverse axes and are staggered in the other direction, two adjacent through holes TH1, TH2 may be located between the island portions IS. Alternatively, the island portion IS may be positioned between the three through holes TH1, TH2, and TH3 positioned adjacent to each other. The two through holes TH1 and TH2 among the three adjacent through holes TH1 and TH2 are through holes arranged in a line and the other through hole TH3 is adjacent to the one in the direction corresponding to the in- Hole, which can be disposed in an area between the two through-holes TH1 and TH2. The island portion IS may be disposed between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS may be disposed between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

In the case of measuring the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the reference hole which is any one of the through holes in the vapor deposition mask 100 according to the embodiment, The deviation between the diameters Cx in each horizontal direction between the vertexes TH and the deviation between the diameters Cy in the vertical direction can be realized at about 2% to about 10%. That is, when the size deviation between adjacent through holes of one reference hole is about 2% to about 10%, the uniformity of the deposition can be ensured. For example, the size variation between the reference hole and the adjacent through holes may be about 4% to about 9%. For example, the size variation between the reference hole and the adjacent through holes may be about 5% to about 7%. For example, the size variation between the reference hole and the adjacent through holes may be between about 2% and about 5%. When the size deviation between the reference hole and the adjacent through holes is less than about 2%, the occurrence rate of the moiré in the OLED panel after deposition can be increased. If the size deviation between the reference hole and the adjacent through holes exceeds about 10%, the incidence of color unevenness in the OLED panel after deposition can be increased. The mean deviation of the through-hole diameters may be +/- 5 mu m. For example, the mean deviation of the through-hole diameter may be +/- 3 mu m. For example, the mean deviation of the through-hole diameters may be +/- 1 mu m. Embodiments can improve the deposition efficiency by realizing the size deviation between the reference hole and the adjacent through holes within +/- 3 mu m.

Referring to FIG. 8, the deposition mask 100 may include a plurality of through holes TH. At this time, the plurality of through holes TH may have a rectangular shape. For example, the through hole TH may be rhombic. The through hole TH may have a length Cx in the horizontal direction and a length Cy in the vertical direction and the length Cx in the horizontal direction and the length Cy in the vertical direction of the through- May correspond to each other.

The through holes TH may be arranged in a line according to the direction. For example, the through-holes TH may be arranged in a line on one of the longitudinal and transverse axes, and staggered on the other.

The first through hole TH1, the second through hole TH2 and the third through hole TH3 can be arranged in a line on the abscissa, and the fourth through hole TH4 and the fifth through hole TH5 can be arranged in a line. The fourth through hole TH4 and the fifth through hole TH5 may be arranged in a line on the abscissa axis and the first through hole TH1, the second through hole TH2 and the third through hole TH3, They can be arranged staggered on their respective longitudinal axes. For example, the fourth through-hole TH4 may be staggered between the first through-hole TH1 and the second through-hole TH2, and the fifth through-hole TH5 may be disposed between the second through- And the third through-hole (TH3).

When the through holes TH are arranged in a row in one of the longitudinal and transverse axes and are staggered in the other direction, the island portion IS may be located at the intersection of the longitudinal axis and the transverse axis . Alternatively, the island portion IS may be positioned between four adjacent through holes TH1, TH2, TH4, and TH6.

The two through holes TH1 and TH2 among the four adjacent through holes TH1, TH2, TH4 and TH6 may mean through holes arranged in a line in either one of the longitudinal axis and the transverse axis, The through holes TH4 and TH6 may mean through holes arranged in a row in the other one of the longitudinal axis and the transverse axis.

The island portion IS in FIGS. 6 to 8 denotes an un-etched surface between the through holes TH on the other surface of the deposition mask 100 in which the facing surface V2 of the effective portion AA is formed . In detail, the island portion IS is formed in the effective portion AA of the vapor deposition mask at the other surface side of the unetched vapor deposition mask 100 excluding the second etching surface ES2 and the through hole TH located in the facing surface. . The deposition mask 100 of the embodiment may be for high resolution to ultra high resolution OLED pixel deposition having a resolution of 400 PPI or more and 400 PPI to 800 PPI or more in detail.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the vapor deposition mask 100 of the embodiment may be for OLED pixel deposition with a number of pixels in the horizontal and vertical directions of 1920 * 1080 or more and 400 PPI or more. That is, one valid part included in the deposition mask 100 of the embodiment may be for forming a pixel number of 1920 * 1080 or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of QHD (Quad High Definition) having a resolution of 500PPI or more. For example, the deposition mask 100 of the embodiment may be for OLED pixel deposition with a number of pixels in the horizontal and vertical directions of 2560 * 1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch can be 530 PPI or more based on a 5.5 inch OLED panel. That is, one valid part included in the mask for mask 100 of the embodiment may be for forming a pixel number of 2560 * 1440 or more.

For example, the deposition mask 100 of the embodiment may be for forming an ultra high resolution deposition pattern of UHD (Ultra High Definition) having a resolution of 700 PPI or more. For example, the vapor deposition mask 100 of the embodiment forms a vapor deposition pattern having a resolution of UHD (Ultra High Definition) for deposition of OLED pixels of 794 PPI or more and having a number of pixels of 3840 * 2160 or more in the horizontal and vertical directions . ≪ / RTI >

The diameter of the through hole (TH) may be a width between the communicating portions (CA). In detail, the diameter of the through hole TH can be measured at the point where the end of the etched surface in the small-hole V1 meets the end of the etched surface in the opposite surface V2. The measuring direction of the diameter of the through hole TH may be any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through-hole TH measured in the horizontal direction may be 33 탆 or less. Alternatively, the diameter of the through-hole TH measured in the horizontal direction may be 33 탆 or less. Alternatively, the diameter of the through hole TH may be an average value of the values measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.

Therefore, the deposition mask 100 according to the embodiment can realize the QHD resolution. For example, the diameter of the through hole TH may be about 15 탆 to about 33 탆. For example, the diameter of the through hole TH may be about 19 占 퐉 to about 33 占 퐉. For example, the diameter of the through hole TH may be about 20 탆 to about 27 탆. If the diameter of the through hole TH is greater than about 33 탆, it may be difficult to realize a resolution of 500 PPI or more. On the other hand, when the diameter of the through-hole TH is less than about 15 mu m, deposition failure may occur.

Referring to FIG. 6, the pitch between adjacent two through holes TH among the plurality of through holes in the horizontal direction may be about 48 μm or less. For example, the pitch between adjacent two through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 탆 to about 48 탆. For example, the pitch between two neighboring through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 탆 to about 35 탆. Here, the interval may mean the interval P1 between the center of the two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. Alternatively, the spacing may mean the distance P2 between the center of the two adjacent first island portions and the center of the second island portion in the horizontal direction. Here, the center of the island portion IS may be the center on the un-etched side between the four through-holes TH adjacent in the horizontal direction and the vertical direction. For example, the center of the island portion IS may be located adjacent to the first through-hole TH1 and the second through-hole TH2 adjacent to each other in the vertical direction A vertical axis connecting the transverse axis connecting the edge of one island portion IS located in the region between the third through hole TH3 and the fourth through hole TH4 adjacent to the second through hole TH2 in the vertical direction, This can mean a point of intersection.

Referring to FIG. 7, the pitch between adjacent two through holes TH among the plurality of through holes in the horizontal direction may be about 48 占 퐉 or less. For example, the pitch between adjacent two through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 탆 to about 48 탆. For example, the pitch between two neighboring through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 탆 to about 35 탆. Here, the interval may mean the interval P1 between the center of the two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. In addition, the interval may mean the interval (P2) between the center of the two adjacent first island portions and the center of the second island portion in the horizontal direction. Here, the center of the island portion IS may be the center of the unexposed face between one through-hole and two through-holes adjacent in the vertical direction. Alternatively, the center of the island portion IS may be centered on the unexposed face between the two through holes and one through hole adjacent in the vertical direction. That is, the center of the island portion (IS) is the center of the non-etched opposite surface between the adjacent three through holes, and the adjacent three through holes may mean that a triangular shape can be formed when the center is the center.

The measuring direction of the distance between the two through-holes (TH) adjacent to the measurement direction of the diameter of the through-hole (TH) may be the same. The distance between the through holes TH may be measured by measuring the distance between the two through holes TH adjacent to each other in the horizontal direction or the vertical direction.

Referring to FIG. 8, the pitch between two adjacent through holes TH among the plurality of through holes in the horizontal direction may be about 48 占 퐉 or less. For example, for example, the pitch between two adjacent through-holes TH among the plurality of through-holes TH in the horizontal direction may be about 20 占 퐉 to about 48 占 퐉. For example, the pitch between two neighboring through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 탆 to about 35 탆. Here, the interval may mean the interval P1 between the center of the two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. Alternatively, the spacing may mean the distance P2 between the center of the two adjacent first island portions and the center of the second island portion in the horizontal direction. Here, the center of the island portion IS may be the center on the un-etched side between the four through-holes TH adjacent in the horizontal direction and the vertical direction. For example, the center of the island portion IS may be located adjacent to the first through-hole TH1 and the second through-hole TH2 adjacent to each other in the vertical direction A vertical axis connecting the transverse axis connecting the edge of one island portion IS located in the region between the third through hole TH3 and the fourth through hole TH4 adjacent to the second through hole TH2 in the vertical direction, This can mean a point of intersection. For example, the center of the island portion IS is divided into a first through hole TH1 and a second through hole TH2 which are two horizontally adjacent through holes, and a second through hole TH1, May be the center of the non-etched second surface located in the region between the fourth through hole TH4 and the sixth through hole TH4 which are two through holes adjacent in the vertical direction at the center of the through hole TH2. That is, the center of the island portion (IS) may be the center of the inviscid facet located between the four through holes.

Also, as shown in FIGS. 6 to 8, the facing surface V2 may include a plurality of inner surfaces. In detail, the facing surface V2 may include a second inner surface ES2 and a third inner surface ES3. The facing face is formed by connecting a plurality of second inner side faces ES2 and a plurality of third inner side faces ES3. Preferably, the plurality of second inner side surfaces ES2 and the plurality of third inner side surfaces ES3 form a facing hole of one through hole.

The second inner surface (ES2) of the facing surface is an inner surface positioned in the horizontal direction with respect to the center of the facing surface of the through hole. Preferably, the second inner surface ES2 is an inner surface located on both sides in the longitudinal direction with respect to the center of the opposite surface. The second inner side surface ES2 is an inner side surface located on both sides of the tensile direction with respect to the center of the opposite surface. The second inner surface ES2 is an inner surface positioned on both sides in the X-axis direction with respect to the center of the opposite surface. Accordingly, the second inner side surface ES2 includes a first sub second second inner side surface ES2-1 located in the first longitudinal direction with respect to the center of the through hole and a second sub inner second side surface ES2-1, And a second sub second second inner side surface ES2-2 located in the longitudinal direction. On the other hand, the inclination angle of the end of the first sub second inner side surface ES2-1 may correspond to the inclination angle of the end surface of the second sub second inner side surface ES2-2. That is, the first sub-second inner side surface ES2-1 and the second sub-second inner side surface ES2-2 may have the same inclination angle? 1.

The third inner surface (ES3) of the facing surface is an inner surface positioned in the vertical direction with respect to the center of the facing surface of the through hole. Preferably, the third inner side surface ES3 is an inner side surface located on both sides in the width direction with respect to the center of the facing surface. The third inner side surface ES3 is an inner side surface located on both sides in a direction perpendicular to the tensile direction with respect to the center of the opposite face. The third inner side surface ES3 is an inner side surface located on both sides in the Y-axis direction with respect to the center of the opposite surface. Therefore, the third inner side surface ES3 includes a first sub-third inner side surface ES3-1 positioned in the first width direction with respect to the center of the opposite surface of the through hole, and a second sub- And a second sub-third inner side surface ES3-2 located in the width direction. On the other hand, the inclination angle of the end surface of the first sub third inner side ES3-1 may correspond to the end surface inclination angle of the second sub third inner side ES3-2. That is, the first sub-third inner side surface ES3-1 and the second sub-third inner side surface ES3-2 may have the same inclination angle? 2.

The inclination angle? 1 of the second inner side surface ES2 may be different from the inclination angle? 2 of the third inner side surface ES3. That is, the inclination angle? 1 of the second inner surface ES2 may be smaller than the inclination angle? 2 of the third inner surface ES3. That is, the cross-section inclination angle? 2 of the inner face in the width direction crossing the longitudinal direction may be larger than the cross-sectional inclination angle? 1 of the inner face in the longitudinal direction of the through hole.

The second inner side surface ES2 and the third inner side surface ES3 may be the surfaces formed by the etching factor during the etching process. The second inner side surface ES2 and the third inner side surface ES3 may be an inner surface extending from the through hole TH to the other surface 102 of the vapor deposition mask 100. [ For example, the second inner side surface ES2 and the third inner side surface ES3 may extend in the direction of the adjacent through hole TH at the end of the through hole TH, Lt; / RTI > In addition, the second inner side surface ES2 and the third inner side surface ES3 may extend in the direction of the unaffected portion UA. That is, the second inner side surface ES2 and the third inner side surface ES3 may extend in a direction in which the non-dihedral surface of the other surface 102 of the vapor-deposition mask 100 is formed.

Ribs RB1 and RB may be positioned between the through holes TH. For example, referring to FIG. 6, one second rib RB2 may be formed between the first through-hole TH1 and the second through-hole TH2 adjacent in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent to the first through hole TH1 in the vertical direction.

The first rib RB1 extends in the longitudinal direction on the deposition mask 100. The first rib (RB1) is positioned longitudinally between a plurality of through holes arranged in the width direction on the deposition mask (100). The first rib RB1 connects a plurality of island portions IS arranged in the longitudinal direction on the deposition mask 100. [

The second rib (RB2) extends in the width direction on the deposition mask (100). The second rib (RB2) is formed in the width direction between a plurality of through holes arranged in the longitudinal direction on the vapor deposition mask (100). The second rib RB2 connects a plurality of island portions IS arranged in the width direction on the deposition mask 100.

7, one rib RB1 and RB2 may be formed between the first through-hole TH1 and the second through-hole TH2 adjacent in the horizontal direction, and the first through-hole TH1 And another rib RB1 or RB2 may be formed between the third through hole TH3 adjacent in the diagonal direction.

That is, ribs RB1 and RB2 may be positioned between adjacent through holes TH. In detail, the ribs RB1 and RB2 can be positioned between the facing faces V2 adjacent to each other. More specifically, the first rib RB1 may be located in a region where the adjacent second inner side surfaces ES2 are connected to each other. More specifically, the second rib RB2 may be located in a region where the third inner side surfaces ES3 adjacent to each other are connected to each other. That is, the ribs RB1 and RB2 may be regions where boundaries of facing faces V2 adjacent to each other are connected.

The first rib RB1 may have a first thickness T1. The second rib RB2 may have a second thickness T2 different from the first thickness T1. The thickness of the first rib RB1 may be different from the thickness of the second rib RB2. In detail, the thickness of the first rib RB1 may be greater than the thickness of the second rib RB2. That is, the first rib RB1 is located in a region connecting the third inner side surfaces ES3 of adjacent through holes, and the second rib RB2 is located in a region connecting the second inner side surfaces ES2 of adjacent through holes. . At this time, the inclination angle of the end surface of the third inner side surface ES3 is larger than the surface side inclination angle of the second inner side surface ES2. Therefore, the thickness of the first rib RB1 located in the region connecting the second inner side surface ES2 having the larger inclination angle of the second inclined side is smaller than the thickness of the second inner side surface ES2 located in the region connecting the third inner side surface ES3, May be greater than the thickness of the rib RB2.

That is, the deposition mask 100 according to the embodiment can deposit OLED pixels having a resolution of 400 PPI or more. In detail, the vapor deposition mask 100 according to the embodiment has a resolution of 500PPI or more as the diameter of the through hole TH is about 33 占 퐉 or less and the pitch between the through holes TH is about 48 占 퐉 or less OLED pixels can be deposited. That is, the QHD resolution can be realized by using the deposition mask 100 according to the embodiment.

The diameter of the through hole (TH) and the distance between the through holes (TH) may be a size for forming green subpixels. For example, the diameter of the through hole TH can be measured based on a green (G) pattern. The green (G) pattern requires a larger number than the red (R) pattern and the blue (B) pattern because the recognition rate through the time is low, and the spacing between the through holes (TH) B) pattern. The deposition mask 100 may be an OLED deposition mask for implementing a QHD display pixel.

For example, the deposition mask 100 may be for depositing at least one subpixel of red (R), first green (G1), blue (B), and second green (G2). In detail, the deposition mask 100 may be for depositing red (R) sub-pixels. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be for simultaneously forming a first green (G1) subpixel and a second green (G2) subpixel.

The pixel arrangement of the organic light emitting display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG). In this case, the red R - the first green G1 can form one pixel RG, and the blue B - the second green G2 can form another pixel BG. In the organic light emitting display having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than the red light emitting organic material and the blue light emitting organic material, the vapor deposition mask 100 according to the present invention may be required.

The diameter of the through hole TH may be about 20 占 퐉 or less in the horizontal direction in the vapor deposition mask 100 according to the embodiment. Accordingly, the deposition mask 100 according to the embodiment can implement UHD resolution. For example, the vapor deposition mask 100 according to the embodiment may have a resolution of 800 PPI class as the diameter of the through hole TH is about 20 μm or less and the interval between the through holes is about 32 μm or less OLED pixels can be deposited. That is, UHD resolution can be realized by using the deposition mask according to the embodiment.

The diameter of the through hole and the distance between the through holes may be a size for forming a green sub-pixel. The deposition mask may be an OLED deposition mask for implementing a UHD display pixel.

FIG. 9 is a diagram showing overlapping sections of respective sections to explain height differences and sizes between a section in the direction of A-A 'in FIG. 6 and a section in the direction of B-B'.

First, a cross section in the A-A 'direction will be described. The A-A 'direction is a transverse cross section that crosses a central region between two first through holes TH1 and a third through hole TH3 which are adjacent in the vertical direction. That is, the transverse section in the direction A-A 'may not include the through hole TH.

The transverse section in the A-A 'direction has an island portion IS, which is the other side of the deposition mask, which is not etched between the third inner side surface ES3 in the facing face and the third inner side face ES3 in the facing face Can be located. Accordingly, the island portion IS may include a surface parallel to an un-etched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the unmasked surface of the deposition mask 100.

Next, a cross section in the B-B direction will be described. The B-B 'direction is a transverse cross section across the centers of the two first through holes (TH1) and the second through holes (TH2) adjacent in the horizontal direction. That is, the transverse section in the direction of B-B 'may include a plurality of through holes TH.

One second rib RB2 may be positioned between the adjacent third through hole TH3 and the fourth through hole TH4 in the direction of B-B '. Another second rib RB2 may be positioned between the fourth through hole TH4 and the fourth through hole in the horizontal direction and between the fifth through hole located in the opposite direction to the third through hole TH3 have. One through hole (TH) may be positioned between the one second rib and the other one second rib. That is, one through hole TH can be positioned between the two second ribs RB1 adjacent in the horizontal direction.

The cross section in the A-A 'direction is located on the first rib RB1, which is a region where the second inner side surface ES2 in the facing face and the second inner side surface ES2 in the adjacent facing face are connected to each other . Here, the first rib RB1 may be a region to which the boundaries of two facing balls adjacent in the vertical direction are connected.

Since the first and second ribs RB1 and RB2 are etched, the thickness of the first and second ribs RB1 and RB2 may be smaller than that of the island portion IS. For example, the width of the island portion IS may be about 2 탆 or more. That is, the width of the portion remaining unetched at the other surface in the direction parallel to the other surface may be about 2 탆 or more. When the width of one end and the other end of one island portion IS is about 2 mu m or more, the entire volume of the mask for vapor deposition 100 can be increased. The vapor deposition mask 100 having such a structure can secure sufficient rigidity against the tensile force applied in the organic material deposition process or the like and can be advantageous to maintain the uniformity of the through holes.

FIG. 10 is a view showing a cross-sectional view in the direction of BB 'of FIG. 6, and FIG. 11 is a view showing a cross-sectional view in the CC' direction of FIG. 6, and FIG. 12 is a cross- FIG.

10 to 12 show the difference in the inclination angle of the end face of the second inner side face ES2 and the end face inclination angle of the third inner side face ES3 in the through hole. 10 to 12 show the thicknesses of the second ribs RB2 located in the region where the second inner side surfaces ES2 are connected and the thicknesses of the first ribs RB1 located in the region where the third inner side surfaces ES3 are connected, . 10 to 12 are diagrams showing the relationship between the height between one surface of the deposition mask 100 on which the small hole V1 is formed on the first rib RB1 and the communicating portion and the height of the small hole on the second rib RB2 V1) is formed on one side of the mask and the difference in height between the adjacent sides of the mask.

10 to 12, a cross section in the direction B-B ', a cross section in the direction C-C', and a cross section in the direction D-D 'will be described. The ribs RB1 and RB2 in the effective region and the through holes TH between the ribs RB1 and RB2 according to Figs. 10 to 12 will be described.

10 to 12, the vapor deposition mask 100 according to the embodiment has a thickness in the effective portion AA where the through holes are formed by etching and a thickness in the unetched portion UA that is not etched, can be different. In detail, the thicknesses of the first ribs RB1 and the second ribs RB2 may be smaller than the thickness of the unetched portion UA that is not etched.

The thickness of the non-affected portion UA may be larger than the thickness of the effective portions AA1, AA2, AA3. For example, the vapor deposition mask 100 may have a maximum thickness of about 30 mu m or less in the unaffected portion UA to the non-deposition region NDA. For example, the vapor deposition mask 100 may have a maximum thickness of about 25 mu m or less of the unaffected portion UA to the non-deposition region NDA. For example, the deposition mask of an embodiment may have a maximum thickness of about 15 [mu] m to about 25 [mu] m in the unglued or non-deposited regions. When the maximum thickness of the ungrooved portion or the non-deposited region of the deposition mask according to the embodiment is greater than about 30 탆, the thickness of the metal plate 10, which is the source of the deposition mask 100, becomes thick, It may be difficult to form the hole TH. When the maximum thickness of the non-fatigued portion (UA) to the non-deposited region (NDA) of the vapor deposition mask (100) is less than about 15 mu m, the thickness of the metal plate is small, .

The maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 may be about 15 mu m or less. For example, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 may be about 7 占 퐉 to about 10 占 퐉. For example, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 may be about 6 占 퐉 to about 9 占 퐉. If the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 exceed about 15 mu m, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. If the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 are less than about 6 mu m, it may be difficult to uniformly form a deposition pattern.

Meanwhile, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 may be different from each other. In detail, the maximum thicknesses T1 and T2 measured at the center of each of the first and second ribs RB1 and RB2 may have different values while satisfying the above range. More specifically, the maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2. The maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2 within the range described above. In other words, the maximum thickness T1 measured at the center of the first rib RB1 may have a certain difference value AT between the maximum thickness T2 measured at the center of the second rib RB2 .

The height of the small hole of the vapor deposition mask 100 may be about 0.2 to about 0.4 times the maximum thicknesses T1 and T2 of the two ribs RB1 and RB2. Accordingly, the height of the small hole formed on the first rib RB1 may be different from the height of the small hole formed on the second rib RB2. In other words, the height of the small hole in the first direction (specifically, the lengthwise direction) in the small hole of the through hole may be different from the height of the small hole in the second direction (specifically, the width direction). In detail, the height H2 of the small-plane hole formed on the first rib RB1 may be greater than the height H1 of the small-aperture hole formed on the second rib RB2.

For example, the maximum thickness measured at the center of the first rib (RB1) or the second rib (RB2) is about 7 μm to about 9 μm, and one face of the vapor deposition mask (100) The ball height may be from about 1.4 [mu] m to about 3.5 [mu] m.

The height (H2) of the small hole in the first rib (RB1) of the vapor deposition mask (100) may be about 4.0 mu m or less. The height H1 of the small hole in the second rib RB2 of the vapor deposition mask 100 may be about 3.5 mu m or less.

Preferably, the height H 2 of the small hole in the first rib RB 1 of the vapor deposition mask 100 may be about 3.5 μm or less. The height H1 of the small hole in the second rib RB2 of the vapor deposition mask 100 may be about 2.5 mu m or less.

Preferably, the height (H2) of the small hole in the first rib (RB1) may be about 0.1 mu m to about 3.4 mu m. The height H1 of the small-diameter hole in the second rib RB2 may be 0.1 탆 to 2.4 탆. For example, the height of the small hole V1 in the first rib RB1 of the vapor deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small hole V1 in the second rib RB1 of the vapor deposition mask 100 may be about 0.5 탆 to about 2.2 탆. For example, the height of the small hole in the first rib RB1 of the vapor deposition mask 100 may be about 1 [mu] m to about 3 [mu] m. For example, the height of the small hole in the second rib RB2 of the vapor deposition mask 100 may be about 1 [mu] m to about 2 [mu] m. Here, the height may be measured in the direction of thickness measurement of the vapor deposition mask 100, that is, the depth direction, and the height from one surface of the vapor deposition mask 100 to the communication portion may be measured. (X direction, longitudinal direction, tensile direction) and the z direction (90 degrees) which are perpendicular to the vertical direction (y direction, width direction, and tensile vertical direction) described above in the plan view of Fig. 5 .

When the height between the one surface of the evaporation mask 100 and the connecting portion is more than about 3.5 mu m, a deposition defect may occur due to a shadow effect in which the evaporation material spreads to a region larger than the area of the through hole in the OLED deposition . Therefore, the height of the small hole in the first rib RB1 is 3.5 mu m or less, and the height of the small hole in the second rib RB2 is 3.0 mu m or less. On the other hand, the height of the small-diameter hole in the first rib RB1 may have a certain difference value? H from the height of the small-diameter hole in the second rib RB2.

The pore W3 at one surface of the evaporation mask 100 where the small pore V1 is formed and the pore W4 at the small pore V1 and the opposite surface V2 Similar or different. The pore size W3 at one surface of the evaporation mask 100 where the small-sized hole V1 is formed may be larger than the pore size W4 at the communicating portion. For example, the difference between the pore size W3 on one surface of the evaporation mask 100 and the pore size W4 on the communicating portion may be about 0.01 μm to about 1.1 μm. For example, the difference between the pore size W3 on one surface of the evaporation mask and the pore size W4 on the communicating portion may be about 0.03 m to about 1.1 m. For example, the difference between the pore size W3 on one surface of the evaporation mask and the pore size W4 on the communicating portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore size W1 on one surface of the evaporation mask 100 and the pore size W2 on the other surface is larger than about 1.1 mu m, deposition failure due to the shadow effect may occur.

One end E1 of the second inner surface ES2 of the face-to-face V2 located on the other surface opposite to the one surface of the evaporation mask 100 on the second rib RB2, 1 inclined at one end E2 of the communicating portion between the surface V1 and the facing surface V2 may be 35 degrees to 45 degrees. One end E3 of the third inner side surface ES3 of the face-to-face V2 located on the other side opposite to the one side of the vapor-deposition mask 100 on the first rib RB1, And the one end E4 of the communicating portion between the opposing surface V2 may be 45 degrees to 55 degrees.

Accordingly, a high-resolution deposition pattern of 400 PPI or higher and 500 PPI or higher in detail can be formed, and the island portion IS may be present on the other surface of the deposition mask 100.

According to the embodiment, the face-to-face hole of the through-hole has a first end face inclination angle in the longitudinal direction and a second end face inclination angle larger than the first end face inclination angle in the width direction, It is possible to increase the thickness of the ribs arranged in the longitudinal direction by the difference of the inclination angles of the two sections, and the rigidity of the vapor deposition mask can be ensured accordingly. Also, since the rigidity of the vapor deposition mask is secured, the length variation can be minimized, and the pattern deposition efficiency can be improved by increasing the shape of the mask pattern and the uniformity of the positions of the through holes.

In addition, according to the embodiment, it is possible to uniformly deposit the OLED pixel pattern in all the regions regardless of the positions of the through holes by reducing the inclination angle of the facing surfaces of the through holes in the direction perpendicular to the moving direction of the organic material deposition container.

13 is a plan view of the effective portion of the deposition mask 100 according to the second embodiment, FIG. 14 is a sectional view showing the second through hole in FIG. 13, and FIG. 15 is a cross- Sectional view showing a through hole.

The vapor deposition mask in Fig. 13 differs from the vapor deposition mask in Fig. 6 in through holes disposed at the outermost portion of the effective portion. Therefore, only the through holes arranged at the outermost portion of the effective portion in Fig. 13 as compared with Fig. 6 will be described below.

Referring to FIG. 13, the effective portion of the deposition mask may include a plurality of through holes. Wherein the plurality of through holes include a first through hole (VH1) arranged in an inner region of the effective portion, a second through hole (VH2) arranged in a first outermost portion of the effective portion, and a second through hole And a third through hole (VH3) disposed in the second portion.

The first through hole VH1 is the same as the through hole described with reference to FIG. 9 through FIG. That is, the first through hole VH1 includes a second inner side ES2 and a third inner side ES3. The second inner side surface ES2 has first and second inner side surfaces ES2-1 and ES2-2 facing each other in the longitudinal direction and having the same first end surface inclination angle, ).

The third inner side surface ES3 has a first sub third inward side surface ES3-1 and a second sub third inward side surface ES3-2 ). The inclination angle of the first end face of the first through hole (VH1) is smaller than the inclination angle of the second end face (VH1).

The second through hole VH2 may be disposed at the first outermost portion of the effective portion and the third through hole VH3 may be disposed at the second outermost portion opposite to the first outermost portion. In detail, the first outermost portion may be the outermost region in the first longitudinal direction within the effective portion. At this time, the first longitudinal direction may be a leftward direction. Accordingly, the first outermost portion may be the leftmost region in the effective portion. The second outermost portion may be the outermost region in the second longitudinal direction within the effective portion. At this time, the second longitudinal direction may be the right direction. Accordingly, the second outermost portion may be a region located on the rightmost side in the effective portion.

A second through hole (VH2) is disposed in the first outermost portion, and a third through hole (VH3) is disposed in the second outermost portion.

The opposite surface of the second through hole VH2 includes a second inner surface ES2 and a third inner surface ES3 like the first through hole VH1. At this time, the third inner side surface ES3 of the opposing face of the second through hole VH2 may have the same inclination angle as the third inner side face ES3 of the opposite face of the first through hole VH1 . However, the inclination angle of the second inner side surface ES2 of the opposite surface of the second through hole VH2 may be different from the inclination angle of the second inner side surface ES2 of the opposite surface of the first through hole VH1 have.

The second inner side surface ES2 of the opposite surface of the second through hole VH2 has a third sub second inner side surface ES2-3 and a fourth sub second inner side surface ES2 -4).

At this time, the third sub second inner side surface ES2-3 is located in a region adjacent to the non-affected portion UA, and the fourth sub second inner side surface ES2-4 is located in the inner region Or may be located in the region adjacent to the substrate.

The third sub second inner side surface ES2-3 has a third end face inclination angle, and the fourth sub second inner side surface ES2-4 has a fourth end face inclination angle. At this time, the third section inclination angle and the fourth section inclination angle may be different from each other. That is, the third sub second inner side surface ES2-3 may have a tapered section angle different from that of the fourth sub second inner side surface ES2-4. The inclination angle of the third sub second inner side surface ES2-3 may be greater than the inclination angle of the fourth sub second inner side surface ES2-4.

The thickness of the third rib connected to the third sub second inner side surface ES2-3 and the thickness of the fourth rib connected to the fourth sub second inner side surface ES2-4 may be different. That is, the thickness of the third rib connected to the third sub second inner side surface ES2-3 may be thicker than the thickness of the fourth rib connected to the fourth sub second inner side surface ES2-4.

The maximum thickness (T3, T4) measured at the center of each of the third and fourth ribs may be about 15 占 퐉 or less. For example, the maximum thickness (T3, T4) measured at the center of each of the third and fourth ribs may be about 7 占 퐉 to about 10 占 퐉. For example, the maximum thickness (T3, T4) measured at the center of each of the third and fourth ribs may be about 6 占 퐉 to about 9 占 퐉. If the maximum thicknesses (T3, T4) measured at the center of each of the third and fourth ribs exceed about 15 mu m, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or more. In addition, when the maximum thicknesses T3 and T4 measured at the center of the third and fourth ribs are less than about 6 mu m, it may be difficult to uniformly form a deposition pattern.

Meanwhile, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs may be different from each other. In detail, the maximum thicknesses T3 and T4 measured at the center of each of the third and fourth ribs may have different values while satisfying the above range. More specifically, the maximum thickness T4 measured at the center of the fourth rib may be smaller than the maximum thickness T3 measured at the center of the third rib. The maximum thickness T4 measured at the center of the fourth rib may be less than the maximum thickness T3 measured at the center of the third rib within the range described above.

The height of the small hole of the second through hole VH2 of the vapor deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thicknesses T3 and T4 measured at the center of the third and fourth ribs. Accordingly, the height of the small hole formed on the fourth rib may be different from the height of the small hole formed on the third rib. In detail, the height H4 of the small hole formed on the fourth rib may be smaller than the height H3 of the small hole formed on the third rib.

For example, the maximum thickness measured at the center of the third rib or the fourth rib is about 7 탆 to about 9 탆, and the height of the small hole between one surface of the second through hole of the vapor deposition mask 100 and the above- From about 1.4 [mu] m to about 3.5 [mu] m.

The height (H4) of the small hole in the third rib of the vapor deposition mask 100 may be about 4.0 mu m or less. The height H1 of the small hole in the fourth rib of the evaporation mask 100 may be about 3.5 mu m or less.

Preferably, the height H3 of the small hole in the third rib of the second through hole of the vapor deposition mask 100 may be about 3.5 占 퐉 or less. The height H4 of the small hole in the fourth rib of the second through hole of the vapor deposition mask 100 may be about 2.5 占 퐉 or less.

Preferably, the height (H3) of the small hole in the third rib may be about 0.1 [mu] m to about 3.4 [mu] m. And, the height H4 of the small-diameter hole in the fourth rib may be 0.1 占 퐉 to 2.4 占 퐉. For example, the height of the small hole V1 in the third rib of the vapor deposition mask 100 may be about 0.5 탆 to about 3.2 탆. For example, the height of the small hole V1 in the fourth rib of the vapor deposition mask 100 may be about 0.5 mu m to about 2.2 mu m. For example, the height of the small hole in the third rib of the vapor deposition mask 100 may be about 1 [mu] m to about 3 [mu] m. For example, the height of the small hole in the fourth rib of the vapor deposition mask 100 may be about 1 탆 to about 2 탆. Here, the height may be measured in the direction of thickness measurement of the vapor deposition mask 100, that is, the depth direction, and the height from one surface of the vapor deposition mask 100 to the communication portion may be measured. (X direction, longitudinal direction, tensile direction) and the z direction (90 degrees) which are perpendicular to the vertical direction (y direction, width direction, and tensile vertical direction) described above in the plan view of Fig. 5 .

When the height between the one surface of the evaporation mask 100 and the connecting portion is more than about 3.5 mu m, a deposition defect may occur due to a shadow effect in which the evaporation material spreads to a region larger than the area of the through hole in the OLED deposition . Therefore, the height of the small hole in the third rib is set to be not more than 3.5 mu m, and the height of the small hole in the fourth rib is set to not more than 3.0 mu m.

On the third rib, one end E5 of the third sub second inner side surface ES2-3 of the face-to-face V2 located on the other side opposite to the one side of the vapor-deposition mask 100, The inclination angle? 3 of the end connecting the one end E6 of the communicating portion between the hole V1 and the facing surface V2 may be 45 to 55 degrees. One end E7 of the fourth sub second inward side surface ES2-4 of the face-to-face V2 on the other side opposite to the one side of the vapor-deposition mask 100 on the fourth rib, 4, which connects one end E8 of the communicating portion between the surface V1 and the facing surface V2, may be from 35 degrees to 45 degrees.

Meanwhile, the facing hole of the third through hole VH3 includes a second inner surface ES2 and a third inner surface ES3 like the first through hole VH1. At this time, the third inner side surface ES3 of the opposite surface of the third through hole VH3 may have the same inclination angle as the third inner side surface ES3 of the opposite surface of the first through hole VH1 . The inclination angle of the second inner side surface ES2 of the opposing face of the third through hole VH3 may be different from the inclination angle of the second inner side face ES2 of the opposite face of the first through hole VH1 have.

The second inner side surface ES2 of the opposing face of the third through hole VH3 has a fifth sub second inner side surface ES2-5 and a sixth sub second inner side surface ES2 -6).

At this time, the fifth sub second inner side surface ES2-5 is located in a region adjacent to the non-affected portion UA, and the sixth sub second inner side surface ES2-5 is located in an inner region Or may be located in the region adjacent to the substrate.

The fifth sub second inner side surface ES2-5 has a fifth section inclination angle, and the sixth sub second inner side surface ES2-6 has a sixth section inclination angle. At this time, the fifth section inclination angle and the sixth section inclination angle may be different from each other. That is, the fifth sub second inner side surface ES2-5 may have a sectional inclination angle different from the end surface inclination angle of the sixth sub second inner side surface ES2-6. Preferably, the tilt angle of the fifth sub second inner side surface ES2-5 may be greater than the tilt angle of the sixth sub second inner side surface ES2-6.

The thickness of the fifth rib connected to the fifth sub second inner side surface ES2-5 and the thickness of the sixth rib connected to the sixth sub second inner side surface ES2-6 may be different from each other. That is, the thickness of the fifth rib connected to the fifth sub second inner side ES 2 - 5 may be thicker than the thickness of the sixth rib connected to the sixth sub second inner side ES 2 - 6.

The maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 15 占 퐉 or less. For example, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 7 占 퐉 to about 10 占 퐉. For example, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may be about 6 占 퐉 to about 9 占 퐉. If the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs exceed about 15 mu m, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T5 and T6 measured at the center of the fifth and sixth ribs are less than about 6 mu m, uniform formation of a deposition pattern may be difficult.

Meanwhile, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may be different from each other. In detail, the maximum thicknesses T5 and T6 measured at the center of each of the fifth and sixth ribs may have different values while satisfying the above range. More specifically, the maximum thickness T6 measured at the center of the sixth rib may be smaller than the maximum thickness T5 measured at the center of the fifth rib. The maximum thickness T6 measured at the center of the sixth rib may be smaller than the maximum thickness T5 measured at the center of the fifth rib within the range described above.

The height of the small hole of the third through hole VH3 of the vapor deposition mask 100 may be about 0.2 to about 0.4 times the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs. Accordingly, the height of the small-sphere holes formed on the sixth rib may be different from the height of the small-sphere holes formed on the fifth rib. In detail, the height H6 of the small hole formed on the sixth rib may be smaller than the height H5 of the small hole formed on the fifth rib.

For example, the maximum thickness measured at the center of the fifth rib or the sixth rib is about 7 탆 to about 9 탆, and the height of the sphere surface between one surface of the third through hole of the vapor deposition mask 100 and the above- From about 1.4 [mu] m to about 3.5 [mu] m.

The height H5 of the small hole in the fifth rib of the vapor deposition mask 100 may be about 4.0 占 퐉 or less. The height H6 of the small hole in the sixth rib of the vapor deposition mask 100 may be about 3.5 占 퐉 or less. Preferably, the height H5 of the small hole in the fifth rib of the third through hole of the vapor deposition mask 100 may be about 3.5 占 퐉 or less. The height H6 of the small hole in the sixth rib of the third through hole of the vapor deposition mask 100 may be about 2.5 占 퐉 or less.

Preferably, the height H5 of the small hole in the fifth rib may be about 0.1 mu m to about 3.4 mu m. The height H6 of the small-diameter hole in the sixth rib may be 0.1 m to 2.4 m. For example, the height of the small hole V1 in the fifth rib of the vapor deposition mask 100 may be about 0.5 탆 to about 3.2 탆. For example, the height of the small hole V1 in the sixth rib of the vapor deposition mask 100 may be about 0.5 탆 to about 2.2 탆. For example, the height of the small hole in the fifth rib of the deposition mask 100 may be about 1 [mu] m to about 3 [mu] m. For example, the height of the small hole in the sixth rib of the vapor deposition mask 100 may be about 1 탆 to about 2 탆. Here, the height may be measured in the direction of thickness measurement of the vapor deposition mask 100, that is, the depth direction, and the height from one surface of the vapor deposition mask 100 to the communication portion may be measured. (X direction, longitudinal direction, tensile direction) and the z direction (90 degrees) which are perpendicular to the vertical direction (y direction, width direction, and tensile vertical direction) described above in the plan view of Fig. 5 .

When the height between the one surface of the evaporation mask 100 and the connecting portion is more than about 3.5 mu m, a deposition defect may occur due to a shadow effect in which the evaporation material spreads to a region larger than the area of the through hole in the OLED deposition . Therefore, the height of the small-plane holes in the fifth rib is 3.5 mu m or less, and the height of the small-hole holes in the sixth rib is 3.0 mu m or less.

On the fifth rib, one end (E9) of the fifth sub second inward side (ES2-5) of the facing face (V2) located on the other side opposite to the one face of the vapor deposition mask (100) The inclination angle? 5 of the end connecting the one end E10 of the communicating portion between the hole V1 and the facing surface V2 may be 45 to 55 degrees. One end E11 of the sixth sub second inward side surface ES2-6 of the face-to-face V2 on the other side opposite to the one side of the vapor-deposition mask 100 on the sixth rib, 6 inclusive of one end E12 of the communicating portion between the surface V1 and the facing surface V2 may be from 35 degrees to 45 degrees.

16 is a view showing a method of manufacturing the deposition mask 100 according to the embodiment.

Referring to FIG. 16, a method of manufacturing an evaporation mask 100 according to an embodiment includes preparing a metal plate 10, arranging a photoresist layer on the metal plate 10 to form a through hole, And removing the photoresist layer to form an evaporation mask 100 including the through-hole.

First, the metal plate 10 as a base material for manufacturing the vapor deposition mask 100 is prepared (S410).

The metal plate 10 may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). More specifically, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). The metal plate 10 may include a small amount of carbon, silicon, sulfur, phosphorus, manganese, titanium, cobalt, copper, May further include at least one or more elements of silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the Invar has a very small thermal expansion coefficient, it is used in precision parts such as masks and precision instruments. Therefore, the vapor deposition mask manufactured using the metal plate 10 can have improved reliability, can prevent deformation, and can also increase the lifetime.

The metal plate 10 may contain about 60 wt% to about 65 wt% of iron, and the nickel may include about 35 wt% to about 40 wt%. In detail, the metal plate 10 may include about 63.5 wt% to about 64.5 wt% of iron, and the nickel may include about 35.5 wt% to about 36.5 wt%. The metal plate 10 may be formed of a metal such as carbon, silicon, sulfur, phosphorus, manganese, titanium, cobalt, At least one element selected from the group consisting of silver (Ag), vanadium (V), niobium (Nb), indium (In) and antimony (Sb). The content, weight and% by weight of the metal sheet 10 can be determined by selecting a specific area a * b on the plane of the metal sheet 10 and measuring a specimen a * b corresponding to the thickness t of the metal sheet 10, b * t) is sampled and dissolved in strong acid, etc., and the weight% of each component is examined. However, the embodiment is not limited to this, and the composition can be examined in weight% by various methods which can confirm the composition of the metal plate.

The metal plate 10 may be manufactured by a cold rolling method. For example, the metal sheet 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing, Or less. Alternatively, the metal sheet 10 may have a thickness of less than about 30 microns after the process through an additional thickness reduction process.

In addition, the step of preparing the metal plate 10 (S410) may further include a step of decreasing the thickness according to the thickness of the metal plate 10 to be targeted. The thickness reducing step may be a step of reducing the thickness by rolling and / or etching the metal plate 10.

For example, a metal plate 10 having a thickness of about 30 탆 may be required to manufacture an evaporation mask for realizing a resolution of 400 PPI or more, and in order to manufacture an evaporation mask for realizing a resolution of 500 PPI or more, A metal plate 10 having a thickness of about 30 탆 to about 30 탆 may be required and a metal plate 10 having a thickness of about 15 탆 to about 20 탆 may be required to manufacture an evaporation mask capable of achieving a resolution of 800 PPI or higher.

In addition, the step of preparing the metal plate 10 may further include a surface treatment step. In detail, the nickel alloy such as Invar may have a high etching rate at the initial stage of the etching, so that the etching factor of the small-hole (V1) of each through hole may be lowered. Further, at the time of etching for forming the facing hole V2 of the through hole, the photoresist layer for forming the opposite face V2 can be peeled off by side etching of the etching liquid. Accordingly, it may be difficult to form a through-hole having a small size, and it is difficult to uniformly form the through-hole, so that the manufacturing yield may be lowered.

Therefore, a surface treatment layer for surface modification with different components, content, crystal structure and corrosion rate can be disposed on the surface of the metal plate 10. Here, the surface modification may mean a layer made of various materials disposed on the surface to improve the etching factor.

That is, the surface treatment layer may be a barrier layer for inhibiting rapid etching on the surface of the metal plate 10 and having a lower etching rate than the metal plate 10. The surface treatment layer may have a crystal plane and a crystal structure different from that of the metal plate 10. For example, as the surface treatment layer includes different elements from the metal plate 10, the crystal plane and the crystal structure may be different from each other.

For example, in the same corrosive environment, the surface treatment layer may have a corrosion potential different from that of the metal plate 10. For example, when the same etchant of the same temperature is treated for the same time, the surface treatment layer may have different corrosion current or corrosion potential from the metal plate 10.

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one side and / or both sides, the whole and / or the effective region. The surface treatment layer or the surface treatment portion may include elements different from the metal plate 10 or may include a metallic element with a slower corrosion rate in an amount larger than the metal plate 10.

Next, a step of forming a through hole TH by arranging a photoresist layer on the metal plate 10 may be performed.

To this end, a first photoresist layer PR1 may be disposed on one side of the metal plate 10 to form a small hole V1 of the through hole on one side of the metal plate 10. [ The first photoresist layer PR1 may be exposed and developed to form a patterned first photoresist layer PR1 on one side of the metal plate 10. [ That is, a first photoresist layer PR1 including an open portion may be formed on one surface of the metal plate. An etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on the other surface opposite to the one surface of the metal plate 10.

Next, the open portion of the patterned first photoresist layer PR1 is half-etched to form a first groove on one surface of the metal plate 10. [ The open portion of the first photoresist layer PR1 may be exposed to an etchant or the like so that etching may occur at an open portion of the one surface of the metal plate 10 where the first photoresist layer PR1 is not disposed.

The step of forming the first groove may be a step of etching the metal plate 10 having a thickness of about 20 탆 to about 30 탆 until the thickness of the metal plate 10 becomes about ½. The depth of the first groove formed through this step may be about 10 탆 to 15 탆. That is, the thickness of the metal plate measured at the center of the first groove formed after this step may be about 10 탆 to about 15 탆.

The step of forming the first groove (S430) may be a step of forming a groove with an anisotropic etching or a semi-additive process (SAP). In detail, an anisotropic etching or semi-addition process may be used to half-etch the open portion of the first photoresist layer PR1. Accordingly, the first groove formed through the half-etching can have an etching speed (direction b) in the depth direction higher than that in the side etching (direction a) rather than an isotropic etching.

The etch factor of the small-plane hole (V1) may be 2.0 to 3.0. For example, the etch factor of the small-hole (V1) may be 2.1 to 3.0. For example, the etch factor of the small-hole (V1) may be 2.2 to 3.0. Here, the etching factor is the depth (B) of the etched SOF / the width A of the photoresist layer extending in the direction of the center of the through hole TH extending from the island portion IS of the SOF B / A). A is an average value of the width of one side of the photoresist layer protruding on the one face and the width of the other side opposite to the one side.

Next, a second photoresist layer PR2 may be disposed on the other surface of the metal plate 10. Then, the second photoresist layer PR2 may be exposed and developed to form a patterned second photoresist layer PR2 on the other surface of the metal plate 10 (S440). In addition, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on one surface of the metal plate 10.

The open portion of the second photoresist layer PR2 may be exposed to an etchant or the like so that etching may occur at an open portion of the other surface of the metal plate 10 where the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the open portion of the second photoresist layer PR2 is etched, the first groove on one surface of the metal plate 10 is connected to the facing surface V2 to form a through hole.

The step of forming the through hole may include forming a second groove for forming the facing hole (V2) after the step of forming the first groove for forming the small-sized hole (V1) TH). ≪ / RTI >

Alternatively, the step of forming the through hole TH may include a step of forming a first groove for forming the small-sized hole V1 after the step of forming the second groove for forming the facing hole V2 To form the through hole (TH).

Alternatively, the step of forming the through hole TH may include the steps of forming a first groove for forming the small-diameter hole V1 and forming a second groove for forming the facing hole V2 And may be simultaneously performed to form the through hole TH.

Next, the first photoresist layer PR1 and the second photoresist layer PR2 are removed to form a face-to-face hole V2 formed on the one face, a face-face hole V1 formed on the other face opposite to the one face, , And a through hole (TH) formed by a communication part to which the boundary between the face-face hole (V2) and the face-face hole (V1) are connected, 100 may be formed.

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10. For example, the vapor deposition mask 100 may include a material having the same composition as that of the metal plate 10. In addition, the island portion IS of the vapor deposition mask 100 may represent the above-described surface treatment layer.

The maximum thickness of the vapor deposition mask 100 formed through the above steps at the center of the first rib RB1 formed at the effective portion AA may be smaller than the maximum thickness at the unaffected portion UA not etched. For example, the maximum thickness at the center of the first rib RB1 may be about 15 탆. For example, the maximum thickness at the center of the first rib RB1 may be less than about 10 占 퐉. However, the maximum thickness in the unaffected portion UA of the vapor-deposition mask 100 can be about 20 탆 to about 30 탆, and can be about 15 탆 to about 25 탆. That is, the maximum thickness of the vapor deposition mask 100 in the unaffected portion UA may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10.

17 and 18 are views showing a deposition pattern formed through the deposition mask according to the embodiment.

Referring to FIG. 17, the vapor deposition mask 100 according to the embodiment may have a height H1 between one surface of the vapor deposition mask 100 in which the small hole V1 is formed and the connecting portion thereof is about 3.5 μm or less. For example, the height H1 may be about 0.1 [mu] m to about 3.4 [mu] m. For example, the height H1 may be about 0.5 [mu] m to about 3.2 [mu] m. For example, the height H1 may be about 1 [mu] m to about 3 [mu] m.

Accordingly, the distance between the one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed can be as short as possible, and the deposition failure due to the shadow effect can be reduced. For example, when forming the R, G, and B patterns using the deposition mask 100 according to the embodiment, it is possible to prevent the deposition of different deposition materials in the region between two adjacent patterns. In detail, when the patterns are formed in the order of R, G, and B from the left as shown in FIG. 18, the R pattern and the G pattern are prevented from being deposited in the region between the R pattern and the G pattern by a shadow effect .

In addition, the deposition mask 100 according to the embodiment can reduce the size of the island portion IS in the effective portion. In detail, the area of the upper surface of the island portion IS, which is a non-reflective surface, can be reduced, so that the organic material can easily pass through the through hole TH during the deposition of the organic material, thereby improving the deposition efficiency.

In addition, the area of the island portion IS may decrease from the center of the effective portions AA1, AA2, and AA3 toward the non-effective portion UA. Accordingly, organic materials can be smoothly supplied to the through holes located at the edges of the effective portions AA1, AA2, and AA3, thereby improving the deposition efficiency and improving the quality of the deposition pattern.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (14)

In a mask for depositing a metal material for OLED pixel deposition,
Wherein the vapor deposition mask includes a vapor deposition portion and a non-vapor deposition portion,
Wherein the vapor deposition unit includes a plurality of effective portions arranged in the longitudinal direction and a non-flux portion other than the effective portion,
The valid part
A plurality of small surface balls formed on one surface of the metal material;
A plurality of facing balls formed on a surface opposite to the one surface of the metallic material;
A plurality of through holes communicating with the face-face holes and the face-face holes, respectively; And
And an island portion formed on the other surface of the metal material and positioned between the plurality of through holes,
The face-
A first section inclination angle in a first direction and a second section inclination angle in a second direction intersecting the first direction,
The first inclination angle of the first section and the inclination angle of the second section are within the range of 35 to 55 degrees,
Wherein the first inclination angle of the section
Is smaller than the second section inclination angle
Symptom wearing mask. The method according to claim 1,
The valid part,
And a rib having a lower height than the island portion,
The ribs
A first rib positioned between adjacent ones of the plurality of through holes in the first direction; And
And a second rib located between adjacent ones of the plurality of through holes in the second direction,
The height of the first rib may be,
The second rib is smaller than the height of the second rib
Symptom wearing mask. 3. The method of claim 2,
Wherein a distance from the center of the through hole to the first rib is a distance
The distance between the center of the through hole and the second rib
Symptom wearing mask. 3. The method of claim 2,
The above-
A first height in a first cross-section in the first direction and a second height in a second cross-section in the second direction,
The first height,
The second height being less than the second height,
Symptom wearing mask. 5. The method of claim 4,
The second height,
3.5 mu m to 4.0 mu m,
The first height,
2.5 탆 to 3.0 탆
Symptom wearing mask. The method according to claim 1,
The first inclination angle of the section
35 DEG to 45 DEG,
The second inclination angle of the cross-
45 DEG to 55 DEG
Symptom wearing mask. The method according to claim 1,
The valid part,
A central region in which the through-hole is disposed, and an outer region disposed in an outer periphery of the central region,
Wherein the outer region comprises:
And a through hole including a first inclination angle of the first section in the first direction, a second section inclination angle in the second direction, and a third section inclination angle in the one direction with respect to the one surface,
The third inclination angle of the section is,
The first inclination angle?
Symptom wearing mask. 8. The method of claim 7,
Wherein the first inclination angle of the through-hole of the outer-
The inclination angle of the section in the first direction toward the central region,
Wherein the third inclination angle of the through-hole of the outer-
Wherein the first inclination angle of the first direction toward the non-affinity portion, which is opposite to the direction toward the center region,
Symptom wearing mask. The method according to claim 1,
The island portion
The width in the first direction is larger than the width in the second direction
Symptom wearing mask. The method according to claim 1,
The through-
Having a diameter of 33 mu m or less and a resolution of 500PPI or more with a distance between the through holes being 48 mu m or less
Symptom wearing mask. The method according to claim 1,
Wherein the first direction is a tensile direction
Symptom wearing mask. The method according to claim 1,
Wherein the second direction is a direction perpendicular to the longitudinal direction,
Symptom wearing mask. 12. The method of claim 11,
Wherein the first direction is the same direction as the longitudinal direction,
Symptom wearing mask. A method for manufacturing an OLED panel in which an evaporation mask according to any one of claims 1 to 13 is applied to a mask frame by tensile welding to deposit an organic material.

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