KR20190048412A - Atomic layer deposition system - Google Patents

Abstract

The present invention relates to a deposition system for an atomic layer. According to the present invention, the deposition system for an atomic layer includes: a processing chamber setting the height of a moving path of supply gas in order for supply gas to pass through the surface of a substrate by laminar flow or Knudsen flow on the surface of the substrate to be deposited to an atomic layer; multiple steam discharge guide lines capable of discharging steam accumulated between a gas storage container and an each gas supply opening and closing valve to a front end of a throttle valve; and the multiple steam discharge opening and closing valves enabling the steam accumulated to be discharged to the front end of the throttle valve or stopping the discharge. Therefore, the deposition system for an atomic layer can guide to effectively obtain an advantage of improving uniformity of the atomic layer and an advantage by shot-time supply of the gas.

Description

[0001] Atomic layer deposition system [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atomic layer deposition system, and more particularly to an atomic layer deposition system in which atomic layer deposition is performed on a surface of a substrate to be atomic layer deposition, in which a supply gas is passed through a substrate surface in a laminar flow or a knudsen flow, A process chamber in which the height of the passage is set and a chamber gas exhaust passage corresponding to the front end of the throttle valve while branching from the plurality of gas supply guiding lines with the front end of each gas supply opening / closing valve as a starting point, A plurality of steam discharge guides for discharging the accumulated steam between the storage container and each gas supply opening / closing valve to the front end of the throttle valve, < a plurality of steam discharge guide lines arranged on the path of the plurality of steam discharge guide lines, Or by opening or closing each of the vapor discharge guidelines, A plurality of steam discharge opening / closing valves &quot; for allowing the gas to be discharged or stopped to be discharged to the front end of the valve, and the like are disposed so that cumulative steam (i.e., steam accumulated between the gas storage container and each gas supply opening / closing valve) At the point in time before the supply of the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) to the process chamber at the time of supplying the gas to the process chamber, (E.g., source gas A, source gas B, purge gas P, and the like) alternately supplied to the process chamber for a short-time (less than 0.1 sec) It is possible to avoid the problem of unauthorized inflow of cumulative steam into the process chamber on the side of the product producer and advantageously improve the uniformity of the atomic layer, Relates to an atomic layer deposition system to guide to effectively enjoy the benefits, and more in accordance with the supply time.

Recently, with the rapid development of semiconductor related technology, various types of atomic layer deposition systems have been widely developed / distributed.

For example, Korean Patent Laid-Open No. 10-2016-105497 (titled film deposition using atomic atomic layer deposition or pulsed chemical vapor deposition) (published September 6, 2016), Korean Patent Laid- -13282 entitled &quot; Process gas evacuation method, atomic layer deposition method and atomic layer deposition apparatus using the same, (Korean Unexamined Patent Application Publication No. 2006-290019), Korean Patent Publication No. 10-2017-21210 (Title: Laminar flow control apparatus and chemical vapor deposition reactor equipped with the same) (Korean Patent Registration No. 10-795487, entitled "Laminar Flow Control Device and Chemical Vapor Deposition Reactor Including the same") (2008.1.27. Korean Patent No. 10-1536257 entitled &quot; Horizontal Flow Deposition Device and Deposition Method Using the Same &quot;, issued on July 13, 2015, US Patent No. 5711811 (titled &quot; Method) (registered on July 21, 1998) One example of deposition systems is disclosed in more detail.

1, the atomic layer deposition system 1 includes a process chamber C in which a substrate W to be atomic layer deposition is disposed, a process chamber C in which a substrate W to be atomic layer deposition is disposed, A throttle valve 3 connected to the chamber gas exhaust passage 2 and opened or closed in accordance with a pressure condition inside the process chamber C so that the internal pressure of the process chamber C can maintain a predetermined process pressure, A vacuum pump 4 for pumping a gas present in the process chamber C and the chamber gas exhaust passage 2 and the like in accordance with a process condition and a gas pump 6, 7) for storing the respective gas chambers (for example, source gas B, purge gas P, etc.), and a plurality of gas storage containers 5, 6, 7, (For example, the source gas A and the source gas) stored in the plurality of gas storage containers 5, 6, A plurality of gas supply guide lines (8, 9, 10) for guiding each of the plurality of gas supply guide lines (8, 9, 10) to be supplied to the process chamber (C) 10 and each of them is opened or closed under the control of a valve controller (not shown) to open or close each of the gas supply guide lines 8, 9, 10, A plurality of gas supply opening / closing valves (11, 12, 13) are arranged in a systematic combination so as to supply or stop supply of the gas A, source gas B, purge gas P, etc. to the process chamber .

Under such a conventional system, the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) is stored in the liquid state while maintaining the evaporation temperature or higher in the gas storage vessels 5, When the gas supply opening / closing valves 11, 12, and 13 are opened, they are supplied along the gas supply guide lines 8, 9, and 10 to the process chamber C side.

However, under such a situation that the gas (for example, source gas A, source gas B, purge gas P, etc.) is supplied along the gas supply guide lines 8, 9 and 10 to the process chamber C side, C), in addition to the gases necessary for the process (for example, the source gas A, the source gas B, the purge gas P and the like), the gas between the gas storage containers 5, 6, 7 and the gas supply open / close valves 11, The source gas A, the source gas B, the purge gas P, etc.) to the steam accumulated in the supply guide lines 8a, 9a, and 10a.

Of course, in addition to the gases necessary for the process (for example, source gas A, source gas B, purge gas P, etc.), the gas storage containers 5, 6, 7 and the gas supply open / close valves 11, 12, When the steam accumulated in the gas supply guide lines 8a, 9a and 10a is pushed together with the gas (for example, the source gas A, the source gas B and the purge gas P) The pressure is rapidly increased beyond the predetermined process pressure, and is forced to be in an abnormal state where the pressure is saturated.

Naturally, due to the influence of the accumulated steam, the internal pressure of the process chamber C rapidly increases to be higher than the previously set process pressure and becomes saturated, and accordingly, the inside of the process chamber (C) The gas (source gas A, source gas B) supplied into the process chamber C is supplied to the substrate W from the surface of the substrate W in a state where the pressure of the next stage is supplied to the process chamber C A reaction that takes place outside the surface of the substrate W rather than a self-limiting reaction deposits more than one atomic layer or generates particles inside the process chamber C, W, there is a great difference between the initial deposition rate and the later deposition rate at the atomic layer side formed on the substrate W. As a result, unless a special measure is taken, The uniformity of the layer is forced to take intact a serious injury that is significantly reduced.

On the other hand, as described above, the gas storage container 5, 6, 7, and the gas supply opening / closing valve 11, 12, 13, together with the gas (for example, source gas A, source gas B, purge gas P, The steam accumulated in the gas supply guide lines 8a, 9a and 10a is pushed into the process chamber C side so that the pressure inside the process chamber C rapidly increases to a predetermined process pressure or more , The throttle valve 3 is immediately operated in an emergency so that the process of stabilizing the pressure in the process chamber C to the process pressure is performed by establishing the open state.

Of course, under such a situation that the throttle valve 3 is operated in an emergency, the valve controller inevitably controls the gas supply open / close valves 11, 12 and 13 until the throttle valve 3 is converted into the normal position, (For example, 20 seconds, 30 seconds, etc.) to the inside of the process chamber C by supplying the gas (for example, source gas A, source gas B, purge gas P,

(For example, source gas A, source gas B, purge gas P, etc.) into the process chamber C by controlling the gas supply opening / closing valves 11, 12, It is possible to flexibly promote self-limiting reaction of the source gas A and the source gas B without difficulty on the side of the product producer if short-time (for example, 0.1 second or less) The source gas A, the source gas B, the purge gas P, and the like) can be flexibly promoted to increase the probability of physical adsorption removal of the purge gas P on the surface of the substrate W. Therefore, In time, it will be possible to easily obtain a high quality uniform atomic layer.

However, in spite of this situation, as described above, in order to normalize the emergency operation of the throttle valve 3 due to the adverse effect of the accumulated steam on the conventional valve controller side, the long-time (long-time (For example, 20 seconds, 30 seconds, and so on) inevitably keep the supply pattern. As a result, on the product producer side, various advantages (for example, short-time , The advantage of being able to easily obtain a uniform atomic layer of high quality in a short period of time, even with only a small amount of gas) can not be enjoyed at all.

In other words, under the conventional system, as long as the problem of inflow of cumulative steam into the process chamber C can not be solved smoothly, there are problems (for example, a problem that the uniformity of the atomic layer is significantly lowered, A problem that the user can not enjoy the advantages of the short-time supply, and the like).

Korean Patent Publication No. 10-2016-105497 (name: film deposition using atomic atomic layer deposition or pulsed chemical vapor deposition) (published September 6, 2016) Korean Patent Laid-Open No. 10-2006-13282 (Title: Process gas evacuation method, atomic layer deposition method using the same, and atomic layer deposition apparatus) (2006.2.9 released) Korean Patent Laid-Open No. 10-2017-21210 (name: Composition matched curtain gas mixtures for adjusting edge uniformity in generic ALD reactors) (Feb. 27, 2017) Korean Patent No. 10-795487 (entitled: Laminar Flow Control Apparatus and Chemical Vapor Deposition Reactor Including the Same) (2008.1.16. Korean Registered Patent No. 10-1536257 (Name: Horizontal Flow Deposition Apparatus and Deposition Method Using the Same) (Published in July 13, 2013) U.S. Patent No. 5711811 (Name: Apparatus and method for thin film growth) (Registered on July 21, 1998)

Accordingly, an object of the present invention is to provide a process for setting a height of a moving path of a supply gas so that a supply gas flows from a surface of a substrate to be atomic layer deposition through a surface of a substrate by laminar flow or knudsen flow The gas storage container and each gas supply opening / closing valve are connected to the chamber gas exhaust passage corresponding to the front end of the throttle valve while branching from the plurality of gas supply guide lines, with the front end of each gas supply opening / A plurality of steam discharge guide lines for discharging steam accumulated in the front end of the throttle valve to the front end of the throttle valve, By opening or closing each guideline, accumulated steam is discharged or discharged to the front end of the throttle valve A plurality of vapor discharge opening / closing valves &gt; for allowing the gas to flow from the gas storage container and the gas supply opening / closing valve, The gas A, the source gas B, the purge gas P, etc.) is introduced into the process chamber at a point prior to the supply of the gas to the process chamber, (For example, source gas A, source gas B, purge gas P, etc.) alternately supplied during a predetermined period of time (0.1 sec or less) so that the supply gases do not mix within the process chamber, On the production side, it is effective to avoid the inflow of cumulative steam into the process chamber flexibly, advantageously improving the uniformity of the atomic layer, advantageous in short-time supply of gas, etc. It is to guide so that you can enjoy with.

Other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

In order to attain the above object, in the present invention, the height of the feed passage of the feed gas is set to be 0.1 (0.1 mm) so that the feed gas is passed through the surface of the substrate by laminar flow or Knudsen flow at the surface of the substrate to be atomic layer- mm to 20 mm; A throttle valve connected to the chamber gas exhaust passage drawn out from the process chamber and opened or closed according to a pressure situation inside the process chamber so that the internal pressure of the process chamber can maintain a predetermined process pressure, ; A plurality of gas storage containers for storing different types of gas; A plurality of gas supply guiding lines guided from each of the plurality of gas storage containers to be connected to the process chamber so that respective gases stored in the plurality of gas storage containers can be supplied to the process chamber; And the gas supply guide lines are opened or closed respectively by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of gas supply guide lines so that the gas can be supplied or stopped to the process chamber side A plurality of gas supply opening / closing valves for allowing the gas supply / Closing valve is connected to the chamber gas exhaust passage corresponding to the front end of the throttle valve while branching from the plurality of gas supply guide lines with the front end of each gas supply opening and closing valve as a starting point, A plurality of vapor discharge guide lines for discharging steam accumulated between the valves to a front end of the throttle valve; The steam is discharged or closed to the front end of the throttle valve by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of vapor discharge opening / closing valves for allowing the vapor discharge opening / closing valve to be opened.

According to another aspect of the present invention, there is provided a substrate for atomic layer deposition, wherein the height of the feed passage of the feed gas is set to 0.1 mm to 20 mm so that the feed gas passes through the surface of the substrate by laminar flow or knudsen flow A plurality of process chambers adapted to be set to a plurality of process chambers; A plurality of throttle valves connected to each of the chamber gas exhaust passages drawn from the respective process chambers and opened or closed in accordance with a pressure condition inside the process chamber so that the internal pressure of each process chamber can maintain a predetermined process pressure; valve; A plurality of gas storage containers for storing different types of gas; A plurality of gas supply guiding lines guided from each of the plurality of gas storage containers to be connected to the respective process chambers so that respective gases stored in the plurality of gas storage containers can be supplied to the respective process chambers; And a plurality of branch gas supply lines which branch from the plurality of gas supply guide lines and are connected to other process chambers to which the gas supply guide lines are not connected and guide the respective gases to be supplied to the other process chambers, Guidelines; The gas supply guide line or the branch type gas supply guide line is opened or closed under the control of the valve controller to open or close each of the gas supply guide lines or the branch type gas supply guide lines A plurality of gas supply opening / closing valves for allowing the gas to be supplied or stopped to the respective process chamber side; And a branch gas discharge line branching from the plurality of gas supply guide lines or the branch gas supply guide line and connected to the chamber gas discharge passage corresponding to the front end of the throttle valve with the front end of each gas supply opening / closing valve as a starting point, A plurality of vapor discharge guide lines for discharging accumulated steam between the storage container and each gas supply opening / closing valve to the front end of the throttle valve; The steam is discharged or closed to the front end of the throttle valve by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of vapor discharge opening / closing valves for allowing the vapor discharge opening / closing valve to be opened.

Further, in another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: (a) providing a substrate having an atomic layer deposited thereon, A plurality of process chambers adapted to be set to 20 mm; A plurality of gas storage containers for storing different types of gas; A plurality of gas supply guiding lines guided from each of the plurality of gas storage containers to be connected to the respective process chambers so that respective gases stored in the plurality of gas storage containers can be supplied to the respective process chambers; And a plurality of branch gas supply lines which branch from the plurality of gas supply guide lines and are connected to other process chambers to which the gas supply guide lines are not connected and guide the respective gases to be supplied to the other process chambers, Guidelines; The gas supply guide line or the branch type gas supply guide line is opened or closed under the control of the valve controller to open or close each of the gas supply guide lines or the branch type gas supply guide lines A plurality of gas supply opening / closing valves for allowing the gas to be supplied or stopped to the respective process chamber side; Wherein the plurality of gas supply guide lines or branched gas supply guide lines are branched from the plurality of gas supply guide lines or branched gas supply guide lines, And a plurality of steam discharge openings for discharging the accumulated steam between the plurality of gas storage containers and the gas supply opening / closing valves to another process chamber to which the gas supply guide line or the branched gas supply guide line is not connected, Line; Wherein the steam is supplied to the gas supply guide line or the branch gas supply line by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of steam discharge opening / closing valves for allowing the guide lines to be discharged or stopped to other process chambers to which the guide lines are not connected.

In the present invention, a process chamber in which the height of the feed passage of the feed gas is set so that the feed gas flows from the surface of the substrate to be atomic layer deposition through the surface of the substrate by laminar flow or knudsen flow, Closing valve is connected to the chamber gas exhaust passage corresponding to the front end of the throttle valve while branching from the plurality of gas supply guiding lines with the front end of each gas supply opening and closing valve as a starting point, A plurality of steam discharge guide lines for discharging the steam to a front end of the throttle valve, respectively, disposed on the path of the plurality of steam discharge guide lines, opened or closed under the control of the valve controller, By opening or closing, accumulated steam can be discharged or stopped to the front end of the throttle valve On the side of the cumulative steam (i.e., the vapor accumulated between the gas storage container and each gas supply opening / closing valve) side, the gas (for example, , The source gas A, the source gas B, the purge gas P, etc.) is supplied to the front end of the throttle valve at a point prior to the supply of the short gas to the process chamber, The pressures of the alternately supplied gases (for example, source gas A, source gas B, purge gas P, etc.) during the time (less than 0.1 sec) are kept constant so that the supply gases are not mixed in the process chamber As a result, on the product producer side, it is advantageous to avoid the inflow of accumulated steam into the process chamber flexibly, to improve the uniformity of the atomic layer, Advantages and the like can be effectively enjoyed.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exemplary diagram conceptually showing an atomic layer deposition system according to the prior art; FIG.
2 is an exemplary view conceptually showing an atomic layer deposition system according to one embodiment of the present invention.
FIG. 3 is an exemplary view conceptually showing an atomic layer deposition system according to another embodiment of the present invention; FIG.
FIG. 4 is an exemplary view conceptually showing an atomic layer deposition system according to another embodiment of the present invention; FIG.
5 is an exemplary view conceptually showing a configuration of a process chamber according to each of the embodiments of the present invention.

Hereinafter, the atomic layer deposition system according to the present invention will be described in more detail with reference to the accompanying drawings.

2, an atomic layer deposition system 100 according to an embodiment of the present invention includes a substrate W to be atomic layer deposition, a substrate W to be atomic layer deposition target substrate W, (C) configured to set the height of the feed passage of the feed gas to be 0.1 mm to 20 mm so as to pass through the surface of the substrate with a laminar flow or a knudsen flow; (103) connected to the chamber gas exhaust passage (102) and opened or closed according to a pressure situation inside the process chamber (C) so that the internal pressure of the process chamber (C) A vacuum pump 104 for pumping a gas existing in the process chamber C and the chamber gas exhaust passage 102 or the like and a gas of a different kind (for example, source gas A, A source gas B, a purge gas P, etc.) The gas storage containers 105, 106 and 107 and the respective gases stored in the plurality of gas storage containers 105, 106 and 107 while being connected to the process chambers C are drawn out from the plurality of gas storage containers 105, A plurality of gas supply guide lines (108, 109, 110) for guiding each of the plurality of gas supply guide lines (108, 109, 110) to be supplied to the process chamber (C) The source gas A, the source gas B, the purge gas (for example, the source gas A, the source gas B, and the purge gas) by opening or closing each of the gas supply guides 108, 109 and 110, P, etc.) can be supplied or stopped to the process chamber (C) side, and the gas supply opening / closing valves (111, 112, 113) Is connected to the chamber gas exhaust passage (102) corresponding to the front end of the throttle valve (103) while branching from the plurality of gas supply guide lines (108, 109, 110) A plurality of steam discharge guide lines 108b, 109b and 110b for discharging the accumulated steam between the gas supply opening and closing valves 111, 112 and 113 to the front end of the throttle valve 103, 109b and 110b while being opened or closed under the control of the valve controller to open or close each of the vapor discharge guide lines 108b, 109b and 110b, whereby the steam is supplied to the throttle valve 103, And a plurality of steam discharge opening / closing valves (1a, 112a, 113a) are arranged in a systematic combination so as to be discharged or stopped to be discharged to the front end of the steam discharge opening / closing valve.

The gas (for example, the source gas A, the source gas B, the purge gas P, etc.) is stored in the gas storage containers 105, 106, 107 in the liquid state while maintaining the evaporation temperature or higher, When the open / close valves 111, 112, and 113 are opened, they are supplied along the gas supply guide lines 108, 109, and 110 to the process chamber C side.

In the process chamber C, gas (for example, source gas A, source gas B, purge gas P, etc.) is supplied to the gas supply guide lines 108, 109 and 110 In addition to the gases required for the process (for example, source gas A, source gas B, purge gas P and the like) under the situation that the gas is supplied to the process chamber C side, the gas storage containers 105, 106, 107 and the gas supply open / close valves 111, 112, The source gas A, the source gas B, the purge gas P, etc.) to the steam accumulated in the gas supply guide lines 108a, 109a, and 110a of the gas supply lines 108a, 109a, and 110a.

In this way, in addition to the gas necessary for the process (for example, the source gas A, the source gas B, the purge gas P and the like), the gas supply guide lines 108a, 109a, and 110a between the gas storage containers 105, 106, and 107 and the gas supply open / close valves 111, 112, (For example, source gas A, source gas B, purge gas P, etc.) to the steam accumulated in the process chamber C, the internal pressure of the process chamber C is higher than the preset process pressure But it is forced to be in an abnormal situation where it rapidly increases and saturates.

Naturally, due to the influence of the accumulated steam, the internal pressure of the process chamber C rapidly increases to be higher than the previously set process pressure and becomes saturated, and accordingly, the inside of the process chamber (C) The gas (source gas A, source gas B) supplied into the process chamber C is supplied to the substrate W from the surface of the substrate W in a state where the pressure of the next stage is supplied to the process chamber C A reaction that takes place outside the surface of the substrate W rather than a self-limiting reaction deposits more than one atomic layer or generates particles inside the process chamber C, W, there is a great difference between the initial deposition rate and the later deposition rate at the atomic layer side formed on the substrate W. As a result, unless a special measure is taken, The uniformity of the layer is forced to take intact a serious injury that is significantly reduced.

As described above, in the present invention, under the circumstances of such a sensitive situation, in the present invention, the front end of each of the gas supply opening / closing valves 111, 112 and 113 is set as a starting point, The steam accumulated in the gas storage containers 105, 106, 107 and the gas supply open / close valves 111, 112, 113 is discharged to the front end of the throttle valve 103 by being connected to the chamber gas exhaust passage 102 corresponding to the front end Are disposed on the paths of the plurality of steam discharge guide lines 108b, 109b and 110b, respectively, and are opened or closed under the control of the valve controller, By opening or closing each of the guide lines 108b, 109b, and 110b, a plurality of vapors that allow the steam to be discharged or stopped to the front end of the throttle valve 103 The discharge opening / closing valves 1a, 112a, and 113a>, and the like.

Of course, under the situation where a plurality of steam discharge guide lines 108b, 109b and 110b, a plurality of steam discharge opening and closing valves 1a, 112a and 113a are provided, the gas storage containers 105, A plurality of steam discharge guide lines 108b, 109b and 110b and a plurality of steam discharge open / close valves 1a, 112a, and 113a are provided on the accumulated steam side accumulated in the gas supply guide lines 108a, 109a, 109b, 110b at a time point prior to the supply of the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) to the process chamber C in accordance with the linkage operation of the vapor discharge guide 108b, , And is subjected to a process of being smoothly discharged to the front end of the throttle valve (103).

Naturally, a plurality of vapor discharge guide lines 108b, 109b (109b, 109b, 109b, 109b, 109b, 109b, 109b) are formed on the cumulative vapor side accumulated in the gas supply guide lines 108a, 109a, 110a between the gas storage containers 105, (Source gas A, source gas B, purge gas P, etc.) to the process chamber C in accordance with the linkage operation of the plurality of steam discharge opening / closing valves 1a, The source gas A, the source gas B, and the source gas B are exhausted from the process chamber C side, when the exhaust gas is smoothly discharged to the front end of the throttle valve 103 along the vapor discharge guide lines 108b, 109b, The source gas A, the source gas B, the purge gas P, etc.) under the condition that the gas supply guide lines 108, 109 and 110 are supplied to the process chamber C side, The gas storage containers 105, 106, 107 and the gas supply opening / closing valves 111, (Source gas A, source gas B, purge gas P, etc.) to the steam accumulated in the gas supply guide 108a, 109a, 110a between the gas supply lines 108a, 109a, The internal pressure of the process chamber C can be maintained at the predetermined process pressure so that a large difference in the initial deposition rate and the later deposition rate is obtained at the atomic layer side formed on the substrate W. [ .

As a result, on the side of the atomic layer formed on the substrate W, the uniformity of the atomic layer formed on the substrate W on the side of the product producer under the condition that the initial deposition rate and the later deposition rate are not greatly different from each other Can be greatly improved.

On the other hand, as described above, on the accumulated steam side accumulated in the gas supply guide lines 108a, 109a, and 110a between the gas storage containers 105, 106, and 107 and the gas supply opening / closing valves 111, 112, (Source gas A, source gas B, purge gas P, etc.) to the process chamber C (for example, a source gas A, a source gas B, a purge gas P, etc.) in accordance with the operation of connecting the plurality of steam discharge opening / closing valves 108b, 109b, and 110b, The pressure in the process chamber C is preset to be the same as the pressure in the process chamber C before the throttle valve 103 is exhausted to the front end of the throttle valve 103 along the steam discharge guides 108b, The normal position of the throttle valve 103 can be maintained constantly without any emergency operation on the throttle valve 103 side.

Of course, when the throttle valve 103 can maintain its normal position constantly without any emergency operation, the valve controller side can control the gas supply opening / closing valves 111, 112, 113 without any problem, Source gas A, source gas B, purge gas P, etc.) into the process chamber C within a short-time (for example, 0.1 second or less).

In this case, on the valve controller side of the present invention, the gas supply opening / closing valves 111, 112 and 113 are controlled in the phase in which gas (for example, source gas A, source gas B, purge gas P and the like) is supplied to the process chamber C , The supply time of the gas (for example, source gas A, source gas B, purge gas P, etc.) is set to 5 msec to 1 sec.

Of course, the gas supply opening / closing valves 111, 112 and 113 are controlled on the valve controller side in a phase where gas (for example, source gas A, source gas B, purge gas P, etc.) is supplied to the process chamber C side And the supply time of the gas (for example, source gas A, source gas B, purge gas P, etc.) can be set to a short-time (for example, 5 msec to 1 sec) It is possible to flexibly promote the self-limiting reaction of the source gas A and the source gas B without difficulty or to flexibly promote the increase of the probability of elimination of physical adsorption on the surface of the substrate W of the purge gas P It becomes possible to easily obtain a high-quality uniform atomic layer in a short time with only a small amount of gas (for example, source gas A, source gas B, purge gas P, etc.).

In short, under the system of the present invention, it is possible to smoothly solve the problem of unauthorized inflow of accumulated vapors into the process chamber (C) on the side of the product producer, thereby causing various problems (for example, A problem that the user can not enjoy the advantage of the short-time supply of the mobile terminal) can be more effectively avoided.

3, the atomic layer deposition system 200 according to another embodiment of the present invention includes a substrate W to be atomic layer deposition, A plurality of process chambers (C1, C2) adapted to set the height of the feed passage of the feed gas to be 0.1 mm to 20 mm so as to pass the substrate surface through a laminar flow or a knudsen flow, C2 are opened or closed according to the pressure conditions inside the process chambers C1 and C2 while being connected to the respective chamber gas exhaust passages 202 drawn out from the process chambers C1 and C2 so that the internal pressures of the process chambers C1 and C2 A plurality of throttle valves 204 for maintaining predetermined process pressures and a vacuum pump for pumping gases existing in the process chambers C1 and C2 and the chamber gas exhaust passages 202 and the like A pump 204 and a gas of a different kind (e.g., source gas A, source gas B, A plurality of gas storage containers 205, 206 and 207 for storing the plurality of gas storage containers 205, 206 and 207 and a plurality of gas storage containers 205, 206 and 207 connected to one of the plurality of gas storage containers 205, A plurality of gas supply guide lines 208, 209 and 210 for guiding each of the gases stored in the plurality of gas supply guide lines 208, 209 and 210 to be supplied to the process chamber C1; The source gas A, the source gas B, the purge gas P, and the like) are connected to the other process chamber C2 to which the guide lines 208, 209 and 210 are not connected, A plurality of branched gas supply guide lines 208b, 209b and 210b for guiding the plurality of gas supply guide lines 208, 209 and 210 or a plurality of branch gas supply guide lines 208b and 209b and 210b By opening or closing each of the gas supply guides 208, 209 and 210 or each of the branch gas supply guides 208b, 209b and 210b by being opened or closed in accordance with the control of the valve controller, A plurality of gas supply opening / closing valves 211, 212, 213, 211a, 212a, 213a for allowing the gas supply source A, the source gas B, the purge gas P etc. to be supplied or stopped to the process chambers C1, The branching from the plurality of gas supply guide lines 208, 209 and 210 or the branch type gas supply guide lines 208b, 209b and 210b with the front end of the supply opening / closing valves 211, 212, 213, 211a, 212a and 213a as a starting point, 203, and 211a, 212a, and 213a connected to the chamber gas exhaust passages 202 corresponding to the front ends of the gas storage vessels 205, 206 and 207 and the gas supply open / close valves 211, 212, 213, A plurality of steam discharge guide lines 208c, 209c and 210c for discharging the gas to the front end of the throttle valve 203 and a plurality of steam discharge guide lines 208c, 209c and 210c, A plurality of steam discharges that allow the steam to be discharged or stopped to the front end of the throttle valve 203 by opening or closing each of the steam discharge guides 208c, 209c, and 210c, respectively, Closing valves 211b, 212b, and 213b are systematically combined.

For convenience, the chamber gas exhaust passage connected to the process chamber C1, the throttle valve, the vacuum pump, and the like are not shown in FIG. 3 for the sake of convenience.

As a countermeasure against the cumulative gas, the gas supply guide line 208, 209, 210 or the branch 204 may be formed as a start point of the gas supply open / close valves 211, 212, 213, 211a, 212a, Is connected to the chamber gas exhaust passage (202) corresponding to the front end of the throttle valve (203) while branching from the gas supply guides (208b, 209b, 210b) A plurality of steam discharge guide lines 208c, 209c and 210c for discharging the accumulated steam between the supply opening / closing valves 211, 212, 213, 211a, 212a and 213a to the front end of the throttle valve 203, 209c, and 210c while being opened or closed under the control of the valve controller to open or close each of the vapor discharge guides 208c, 209c, and 210c, It will take additional measures to install a plurality of steam discharge on-off valve (211b, 212b, 213b)> such as to be stopped by the front end discharge or outlet of the throttle valve 203.

Of course, even when a plurality of steam discharge guides 208c, 209c, and 210c, a plurality of steam discharge opening and closing valves 211b, 212b, and 213b are provided, the gas storage containers 205, On the accumulated steam side accumulated in the gas supply guide lines 208a, 209a and 210a between the valves 211, 212, 213, 211a, 212a and 213a, a plurality of steam discharge guide lines 208c, 209c and 210c, At a time point before the supply of the gases (for example, the source gas A, the source gas B, the purge gas P, etc.) to the process chambers C1 and C2 in accordance with the linkage operation of the plurality of vapor discharge guides 211b, 212b, It is subjected to a process of being smoothly discharged to the front end of the throttle valve 203 along the lines 208c, 209c, and 210c.

Naturally, on the accumulated steam side accumulated in the gas supply guide lines 208a, 209a, 210a between the gas storage containers 205, 206, 207 and the gas supply opening / closing valves 211, 212, 213, 211a, 212a, 213a, (For example, source gas A, source gas B, purge gas P, etc.) to the process chambers (for example, the source gas A, the source gas B, the purge gas P, etc.) in accordance with the linkage operation of the lines 208c, 209c and 210c, the plurality of steam discharge opening / closing valves 211b, 212b, C2 and the like are smoothly discharged to the front end of the throttle valve 203 along the plurality of steam discharge guides 208c, 209c and 210c at the time of the supply of the gas to the process chambers C1 and C2, (For example, the source gas A, the source gas B, the purge gas P, etc.) are supplied to the process chambers C1 and C2 along the gas supply guides 208, 209 and 210, the branched gas supply guides 208b, 209b and 210b, Under the supplied condition, the gas necessary for the process (for example, the source gas A, the source gas B, The source gas A, the source gas B, the purge gas P, etc.) up to the cumulative steam can be flexibly avoided in addition to the process chamber C1 And C2 can maintain the predetermined process pressure normally so that there is no significant difference between the initial deposition rate and the later deposition rate at the atomic layer side formed on the substrate W. [

As a result, on the side of the atomic layer formed on the substrate W, the uniformity of the atomic layer formed on the substrate W on the side of the product producer under the condition that the initial deposition rate and the later deposition rate are not greatly different from each other Can be greatly improved.

On the other hand, as described above, on the cumulative steam side accumulated in the gas supply guide lines 208a, 209a, and 210a between the gas storage containers 205, 206, and 207 and the gas supply opening / closing valves 211, 212, 213, 211a, 212a, and 213a, The source gas A, the source gas B, the purge gas P, etc.) in accordance with the connection operation of the steam discharge guide lines 208c, 209c and 210c of the steam discharge opening / closing valves 211b, 212b and 213b, At the point in time prior to the supply of the gas to the process chambers C1 and C2 of the process chamber C1 and C2, the gas is smoothly discharged to the front end of the throttle valve 203 along the plurality of steam discharge guides 208c, 209c and 210c, The normal position of the throttle valve 203 can be maintained at a constant level without emergency operation even when the internal pressure of the first and second cylinders C1 and C2 becomes constant.

Of course, even when the throttle valve 203 can maintain its normal position constantly without any emergency operation, the valve controller side can supply the gas supply opening / closing valves 211, 212, 213, 211a, 212a, (For example, 0.1 second or less) into the process chambers C1 and C2 by controlling the supply of the gas (for example, source gas A, source gas B, purge gas P, etc.).

In this case, in the aspect of the valve controller of the present invention, the gas supply opening / closing valves 211, 212, 213, 211a, 211b, 211c, 211d, The supply time of the gas (for example, source gas A, source gas B, purge gas P, etc.) is set to 5 msec to 1 sec.

Of course, in the phase where the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) is supplied to the process chambers C1 and C2 from the valve controller side, the gas supply opening / closing valves 211, 212, 213, The supply time of the gas (for example, source gas A, source gas B, purge gas P, etc.) can be set to a short-time (for example, 5 msec to 1 sec) The self-limiting reaction of the source gas A, the source gas B, and the like can be flexibly promoted without any difficulty on the side of the product producer, It is possible to smoothly increase the probability of adsorption elimination and thereby to easily obtain a uniform high-quality atomic layer in a short time with only a small amount of gas (for example, source gas A, source gas B, purge gas P, .

In other words, even under the other system of the present invention, it is possible to smoothly solve the problem of inflow of cumulative steam into the process chambers (C1, C2) on the side of the product producer, thereby solving various problems (for example, A problem that the advantage of the short-time supply of the gas can not be enjoyed, and the like) can be avoided more effectively.

4, the atomic layer deposition system 300 according to another embodiment of the present invention includes a substrate W to be atomic layer deposited, and is supplied from the surface of the substrate W to be atomic layer deposition A plurality of process chambers (C1, C2, C3, C4) adapted to set the height of the feed passage of the feed gas to be 0.1 mm to 20 mm so that the gas passes through the substrate surface by laminar flow or knudsen flow, A plurality of gas storage containers 305, 306, 307 for storing different kinds of gases (for example, source gas A, source gas B, purge gas P and the like), and a plurality of gas storage containers 305, 306, The source gas A, the source gas B, the purge gas P, and the like) stored in the plurality of gas storage containers 305, 306, and 307 are connected to the process chamber C1 of the process chamber C1, A plurality of gas supply guides 309 and 310 are connected to the other process chambers C2 and C3 which are branched from the plurality of gas supply guide lines 308 and 309 and 310 and are not connected to the respective gas supply guide lines 308, 309 and 310, A plurality of branched gas supply guide lines 308b, 308c, 309b, 309c, and 310b (for example, a source gas A, a source gas B, and a purge gas P) are supplied to the other process chambers C2 and C3 And 310c are arranged on the paths of the plurality of gas supply guide lines 308, 309 and 310 or the branch type gas supply guide lines 308b, 308c, 309b, 309c, 310b and 310c, The source gas A and the source gas B (for example, the source gas A and the source gas B) are opened or closed by opening or closing the gas supply guide lines 308, 309, 310 or the branch gas supply lines 308b, 308c, 309b, 309c, 310b, , Purge gas P, etc.) Closing valves 311, 312, 313, 311a, 311b, 312a, 312b, 313a, 313b for allowing the gas supply opening / closing valves 311, 312, 313, 311a, 311b, 309c, 309c, 308c, 309b, 309c, 310b, and 310c with the front end of the gas supply guide lines (312a, 312b, 313a, 313b) The plurality of gas supply guides 308, 309 and 310 or the branch gas supply guides 308b, 308c, 309b, 309c, 310b and 310c are connected to the other process chambers C4 to which the plurality of gas storage vessels 309 and 310 or the branched gas supply guide lines 308b, 308c, 309b, and 319b, respectively, accumulated between the gas supply open / close valves 311, 312, 313, 311a, 311b, 312a, 309c, 310b, 310c are discharged to another process chamber C4 to which they are not connected A plurality of steam discharge guide lines 308d, 309d and 310d are arranged on the paths of the plurality of steam discharge guide lines 308d, 309d and 310d and are opened or closed under the control of the valve controller, By opening or closing each of the guide lines 308d, 309d and 310d, the steam is supplied to the gas supply guide lines 308, 309 and 310 or the branched gas supply guide lines 308b, 308c, 309b, 309c, 310b and 310c And a plurality of steam discharge opening / closing valves 311c, 312c, and 313c that can be discharged or stopped to the other process chambers C4 are systematically combined.

For convenience, the chamber gas exhaust passage, the throttle valve, the vacuum pump, etc. connected to the process chambers C1, C2, and C3 are omitted from FIG. 4 for convenience.

As a countermeasure against the cumulative gas, the front end of each gas supply opening / closing valve 311, 312, 313, 311a, 311b, 312a, 312b, 313a, 313b is used as a starting point, The plurality of gas supply guide lines 308, 309, 310 or the branch gas supply guide lines 308b, 308c, 310c, 310b, 310c branch from the lines 308, 309, 310 or the branch type gas supply guides 308b, 308c, 309b, 309c, 309b, 309c, 310b, 310c are connected to the other process chambers C4 to which the gas storage containers 305, 306, 307, 309c, 310b, 310c are not connected, For discharging the steam accumulated between the gas supply guide lines 308, 309 and 310 or the other process chambers C4 to which the branched gas supply guide lines 308b, 308c, 309b, 309c, 310b and 310c are not connected Steam discharge guide lines 308d, 309d, 310d &gt;, &lt; By opening or closing each of the vapor discharge guiding lines 308d, 309d, and 310d, respectively, by being opened or closed under the control of the valve controller while being disposed on the paths of the water vapor discharge guiding lines 308d, 309d, and 310d, The steam may be discharged or stopped to the other process chamber C4 to which the gas supply guide lines 308, 309 and 310 or the branched gas supply guide lines 308b, 308c, 309b, 309c, 310b and 310c are not connected A plurality of steam discharge opening / closing valves 311c, 312c, and 313c &gt;

Of course, even in a situation where a plurality of steam discharge guide lines 308d, 309d and 310d, a plurality of steam discharge opening / closing valves 311c, 312c and 313c are provided, the gas storage containers 305, 306 and 307, The plurality of vapor discharge guide lines 308d, 309d, and 310d, and the plurality of vapor discharge guide lines 308a, 309a, and 310a are accumulated on the accumulated vapor side accumulated in the gas supply guide lines 308a, 309a, and 310a between the valves 311, 312, 313, 311a, 311b, 312a, At a time point prior to the supply of the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) to the process chambers C1 and C2 in accordance with the coupling operation of the plurality of steam discharge opening / closing valves 311c, 312c, And the steam discharge guide lines 308d, 309d, and 310d to the process chamber C4 side.

Naturally, on the cumulative steam side accumulated in the gas supply guide lines 308a, 309a, and 310a between the gas storage containers 305, 306, and 307 and the gas supply opening / closing valves 311, 312, 313, 311a, 311b, 312a, The source gas A, the source gas B, and the purge gas P (for example, the source gas A, the source gas B, and the purge gas P) in accordance with the linkage operation of the plurality of vapor discharge guide lines 308d, 309d and 310d and the plurality of vapor discharge open / close valves 311c, 312c and 313c 309d and 310d are smoothly discharged to the process chamber C4 side at the point in time prior to the supply of the process chambers C1 and C2 to the process chambers C1 and C2, The source gas A, the source gas B, and the purge gas P are supplied to the gas supply guide lines 308, 309 and 310 and the branch gas supply guides 308b, 308c, 309b, 309c, 310b and 310c, Under the condition that the gas is supplied to the process chambers C1, C2, C3 side along with the gas (for example, source gas A The source gas A, the source gas B, the purge gas P, etc.) to the accumulated steam in addition to the source gas B, the purge gas P, etc.) As a result, the internal pressure of the process chambers C1, C2, and C3 can maintain the preset process pressure, so that a large difference in the initial deposition rate and the later deposition rate at the atomic layer side formed on the substrate W .

As a result, on the side of the atomic layer formed on the substrate W, the uniformity of the atomic layer formed on the substrate W on the side of the product producer under the condition that the initial deposition rate and the later deposition rate are not greatly different from each other Can be greatly improved.

Particularly, in another embodiment of the present invention, the cumulative steam is supplied to the process chamber C4 (C4) via the plurality of steam discharge guide lines 308d, 309d and 310d, the plurality of steam discharge opening / closing valves 311c, 312c and 313c, The source gas A, the source gas B, the purge gas P, and the like) supplied with the accumulated vapor are subjected to the discharge process to the atomic layer deposition process by the process chamber C4 in a flexible manner The waste of the unnecessary gas gas (for example, the source gas A, the source gas B, the purge gas P, and the like) can be more efficiently blocked on the side of the product producer under another embodiment of the present invention .

As described above, the gas supply guide lines 308a, 309a, and 310a between the gas storage containers 305, 306, and 307 and the gas supply opening / closing valves 311, 312, 313, 311a, 311b, 312a, (For example, a source gas A, a source gas B (e.g., a source gas A), a source gas B (a source gas A), and a plurality of vapor discharge open / close valves 311c, 312c and 313c 309d and 310d to the process chamber C4 at a time point before the supply of the purge gas P and the like to the process chambers C1, Accordingly, even when the pressure inside the process chambers C1, C2, C3 becomes equal to the predetermined process pressure, the throttle valve (the throttle valve connected to the process chambers C1, C2, C3, The valve is not shown in the figure), without any emergency operation, It is possible to keep the motion constant.

Of course, even if the throttle valve can maintain its normal position constantly without any emergency operation, the gas supply opening / closing valves 311, 312, 313, 311a, 311b, 312a, 312b, 313a, (For example, 0.1 seconds or less) into the process chambers C1, C2, and C3 by controlling the gas supply sources 313a, 313b, .

In this case, on the valve controller side of the present invention, the gas supply opening / closing valves 311, 312, 313, 311 (for example, the source gas A, the source gas B and the purge gas P) are supplied to the process chambers the source gas A, the source gas B, the purge gas P, and the like) is set to 5 msec to 1 sec by controlling the gas supply sources a, 311b, 312a, 312b, 313a and 313b.

Of course, in the phase in which the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) is supplied to the process chambers C1, C2, and C3 on the valve controller side, the gas supply open / close valves 311, 312, 313, 311 the supply time of the gas (for example, the source gas A, the source gas B, the purge gas P, etc.) is controlled to a short-time (for example, 5 msec The self-limiting reaction of the source gas A, the source gas B, and the like can be flexibly promoted without difficulty on the side of the product producer, or even when the purge gas P The source gas A, the source gas B, the purge gas P, and the like) can be flexibly promoted to increase the probability of physical adsorption elimination probability on the surface of the substrate W, A uniform atomic layer can be easily obtained. .

In other words, even under the other system of the present invention, it is possible to smoothly solve the problem of unauthorized inflow of accumulated vapors into the process chambers (C1, C2, C3) on the product producer side, The problem that the advantage of the short-time supply of the gas can not be enjoyed, and the like) can be avoided more effectively.

5 is a graph illustrating the relationship between the height of the feed passage of the feed gas and the height of the feed gas in the range of 0.1 mm to 20 mm (mm) so that the feed gas is passed through the surface of the substrate by laminar flow or Knudsen flow at the surface of the substrate W to be atomic layer- (C, C1, C2, C3, C4) according to the present invention, which is set up to set the temperature of the process chamber.

The process chambers C, C1, C2, C3 and C4 may comprise a chamber outer wall, a top plate, a bottom plate, a substrate, a gas in line, out line. The chamber outer wall isolates the interior and exterior of the process chamber so that the gas injected into the process chamber can escape externally only through the gas exhaust.

The top plate may be disposed symmetrically with the substrate to form a passageway through which the feed gas passes to the substrate surface, and may be arranged in a single or a plurality of substrates to increase the atomic layer formation efficiency, An electrode that generates a plasma to supply energy to the gas may be included.

In this case, the height of the passage formed between the top plate and the substrate may be adjusted by adjusting the flow rate of the supply gas in the laminar flow or the knudsen flow, taking into consideration variables such as process pressure, The height of the feed passage of the feed gas is set to 0.1 mm to 20 mm so as to pass through the surface.

The bottom plate may have a single or a plurality of substrates, and heat may be included for smooth atomic layer formation.

The substrate generally comprises an amorphous substrate (ex: glass, etc.), a crystalline substrate (ex: Si wafer, sapphire, quartz, etc.), a metal substrate (ex: Al, Cu, Au, (ex: PET, PI, etc.) are used singly or plurally.

The gas injection unit is installed at the side of the process chamber and is an inlet through which the supply gas is injected into the process chamber. Depending on the substrate area, atomic layer uniformity, and supply gas type, .

The gas exhaust part is an outlet for exhausting the supply gas injected into the process chamber on the side of the process chamber. Depending on the substrate area, atomic layer uniformity, and supply gas type, one or a plurality of exhaust parts are combined, And can be installed on the underside.

The operation principle of a general atomic layer deposition system is such that when a supply gas (for example, source gas A, purge gas P, source gas B, purge gas P, etc.) is sequentially supplied into the process chamber, The process chamber is completely filled with the purge gas P, and the residual gas of the source gas A supplied previously and the source gas A adsorbed on the substrate surface are introduced into the process chamber And the source gas B is supplied so as to completely fill the inside of the process chamber so that a self-limiting reaction occurs with the source gas A adsorbed on the substrate surface. Then, the inside of the process chamber is completely filled with the purge gas P The residual gas of the supplied source gas B and the source gas B adsorbed on the substrate surface are discharged to the outside of the process chamber.

In the present invention, the next gas is supplied before the gas that is sequentially alternately supplied in alternation in short time (less than 0.1 sec) inside the process chamber fills the process chamber, and the supplied gas is supplied to the gas transfer passage The gas is passed through the surface of the substrate by laminar flow or knudsen flow by the gap and the pressure and the supplied gases are discharged to the exhaust portion without being mixed with each other

The feed gas forming the laminar flow or the knudsen flow fed into the chamber flows in the sequence of the source gas A-purge gas P-source gas B-purge gas P, There is no need to completely fill and exhaust the process gas in the process chamber as in the case of the atomic layer deposition system of the atomic layer deposition system, So that the source gas A causes a self-limiting reaction to take place on the surface of the substrate. Next, the residual gas of the source gas A previously supplied with the purge gas P and the source gas A adsorbed on the substrate surface are removed from the surface of the substrate, B so that a self-limiting reaction occurs with the source gas A adsorbed on the substrate surface, and the residual gas of the source gas B supplied to the purge gas P and the residual gas of the source gas B And the adsorbed gas source B is removed from the substrate surface.

The present invention is not limited to a specific field, and exhibits generally useful effects in various kinds of thin film manufacturing processes.

Although specific embodiments of the present invention have been described and illustrated above, it is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Such modified embodiments should not be understood individually from the technical idea and viewpoint of the present invention, and such modified embodiments should be included in the appended claims of the present invention.

W: substrate
C: Process chamber
2,102,202,302: chamber gas exhaust passage
3,103,203,303: Throttle valve
5,6,7,105,106,107,205,206,207,305,306,307: Gas storage container
10, 108, 109, 110, 208, 209, 210, 308, 309, 310:
311, 311b, 312a, 312b, 313a, 313b: the gas supply opening / closing valve 311, 311, 311,
208b, 209b, 210b, 308b, 308c, 309b, 309c, 310b, 310c:
108b, 109b, 110b, 208c, 209c, 210c, 308d, 309d, 310d:
111a, 112a, 113a, 211b, 212b, 213b, 311c, 312c, 313c:

Claims (5)

A process chamber in which an atomic layer deposition target substrate is disposed;
A throttle valve connected to the chamber gas exhaust passage drawn out from the process chamber and opened or closed according to a pressure situation inside the process chamber so that the internal pressure of the process chamber can maintain a predetermined process pressure, ;
A plurality of gas storage containers for storing different types of gas;
A plurality of gas supply guiding lines guided from each of the plurality of gas storage containers to be connected to the process chamber so that respective gases stored in the plurality of gas storage containers can be supplied to the process chamber;
And the gas supply guide lines are opened or closed respectively by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of gas supply guide lines so that the gas can be supplied or stopped to the process chamber side A plurality of gas supply opening / closing valves for allowing the gas supply /
Closing valve is connected to the chamber gas exhaust passage corresponding to the front end of the throttle valve while branching from the plurality of gas supply guide lines with the front end of each gas supply opening and closing valve as a starting point, A plurality of vapor discharge guide lines for discharging steam accumulated between the valves to a front end of the throttle valve;
The steam is discharged or closed to the front end of the throttle valve by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of vapor discharge opening / closing valves for allowing the vapor discharge opening / closing valve to be opened. A plurality of process chambers in which a substrate to be atomic layer deposition is disposed;
A plurality of throttle valves connected to each of the chamber gas exhaust passages drawn from the respective process chambers and opened or closed in accordance with a pressure condition inside the process chamber so that the internal pressure of each process chamber can maintain a predetermined process pressure; valve;
A plurality of gas storage containers for storing different types of gas;
A plurality of gas supply guiding lines connected to one of the plurality of gas storage vessels and connected to one of the plurality of gas storage vessels to guide respective gases stored in the plurality of gas storage vessels to respective process chambers, and;
And a plurality of branch gas supply lines which branch from the plurality of gas supply guide lines and are connected to other process chambers to which the gas supply guide lines are not connected and guide the respective gases to be supplied to the other process chambers, Guidelines;
The gas supply guide line or the branch type gas supply guide line is opened or closed under the control of the valve controller to open or close each of the gas supply guide lines or the branch type gas supply guide lines A plurality of gas supply opening / closing valves for allowing the gas to be supplied or stopped to the respective process chamber side;
And a branch gas discharge line branching from the plurality of gas supply guide lines or the branch gas supply guide line and connected to the chamber gas discharge passage corresponding to the front end of the throttle valve with the front end of each gas supply opening / closing valve as a starting point, A plurality of vapor discharge guide lines for discharging accumulated steam between the storage container and each gas supply opening / closing valve to the front end of the throttle valve;
The steam is discharged or closed to the front end of the throttle valve by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of vapor discharge opening / closing valves for allowing the vapor discharge opening / closing valve to be opened. A plurality of process chambers in which a substrate to be atomic layer deposition is disposed;
A plurality of gas storage containers for storing different types of gas;
A plurality of gas supply guiding lines connected to one of the plurality of gas storage vessels and connected to one of the plurality of gas storage vessels to guide respective gases stored in the plurality of gas storage vessels to respective process chambers, and;
And a plurality of branch gas supply lines which branch from the plurality of gas supply guide lines and are connected to other process chambers to which the gas supply guide lines are not connected and guide the respective gases to be supplied to the other process chambers, Guidelines;
The gas supply guide line or the branch type gas supply guide line is opened or closed under the control of the valve controller to open or close each of the gas supply guide lines or the branch type gas supply guide lines A plurality of gas supply opening / closing valves for allowing the gas to be supplied or stopped to the respective process chamber side;
Wherein the plurality of gas supply guide lines or branched gas supply guide lines are branched from the plurality of gas supply guide lines or branched gas supply guide lines, And a plurality of steam discharge openings for discharging the accumulated steam between the plurality of gas storage containers and the gas supply opening / closing valves to another process chamber to which the gas supply guide line or the branched gas supply guide line is not connected, Line;
Wherein the steam is supplied to the gas supply guide line or the branch gas supply line by opening or closing each of the steam discharge guide lines by being opened or closed under the control of the valve controller while being disposed on the paths of the plurality of steam discharge guide lines, And a plurality of steam discharge opening and closing valves for allowing the guide lines to be discharged or stopped to other process chambers to which the guide lines are not connected. 4. The method according to any one of claims 1 to 3, wherein the valve controller side controls the gas supply opening / closing valve in a phase where the gas is supplied to the process chamber side, and sets the gas supply time to 5 msec to 1 sec Wherein the atomic layer deposition system comprises: The process chamber according to any one of claims 1 to 3, wherein the supply gas flows from the surface of the substrate (W) to be atomic layer deposition through the substrate surface in laminar flow or knudsen flow The height of the gas passage is set to 0.1 mm to 20 mm.

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