KR100369859B1 - Apparatus for Atomic Layer Deposition - Google Patents

Abstract

An atomic layer deposition apparatus is disclosed. The atomic layer deposition apparatus according to the present invention comprises a reaction chamber; A reaction tube upper distribution plate having a reaction gas distribution port at a lower surface thereof to distribute one or more kinds of reaction gases supplied through each reaction gas supply pipe passing through one side of the upper portion of the reaction chamber; A reaction tube intermediate distribution plate having one or more reaction gas inlets supplied with each reaction gas so as to uniformly distribute the distribution of each reaction gas supplied by the reaction tube upper distribution plate; A reaction tube lower plate having one or more reaction gas flow holes for supplying each reaction gas supplied by the reaction tube middle distribution plate to the upper portion of the wafer, and forming a predetermined space thereunder; A susceptor positioned below the reaction tube lower plate to seat a wafer; An exhaust pipe connected to the reaction tube lower plate to exhaust gas out of the reaction chamber; And an induction plasma generating apparatus for cleaning the inside of the reaction chamber outside the reaction chamber and plasma processing of the wafer when the wafer is seated on the susceptor. According to this, it is possible to control the uniform formation of the thin film by supplying the respective reaction gases to the reaction space of the chamber independently of each other, it is possible to clean the inside of the reaction chamber and plasma treatment of the substrate without separating the device.

Description

Atomic Layer Deposition Apparatus {Apparatus for Atomic Layer Deposition}

The present invention relates to an atomic layer deposition apparatus, and more particularly, the reaction gas is designed to flow uniformly independently without stagnation in the substrate, and the periodic cleaning of the inside of the reaction tube is possible. The present invention relates to an atomic layer deposition apparatus that can be processed temporarily.

Recently, a thin film deposition method having a thin step having excellent step coverage (step coverage) has been required due to the increase in the degree of integration of semiconductor devices and the reduction of device sizes. Thin film deposition equipment includes chemical vapor deposition (CVD), atomic layer deposition (ALD), and atomic layer epitaxy (ALE). It is applied in various fields. Such a thin film deposition apparatus needs to deposit a thin film having high purity and excellent electrical properties on a wafer in order to produce a high-density chip, and continuous improvements are being made to increase operational efficiency and productivity.

The chemical vapor deposition method is a vapor deposition method for forming a thin film of a desired state by supplying one or more gaseous compounds containing elements constituting the necessary thin film material from the outside of the reaction chamber by chemical reaction on the gas phase or the substrate surface. to be. However, such a chemical vapor deposition method adjusts the thickness depending on the amount of reaction gas and forms a thin film by chemical reaction, and therefore, uniform control of the thin film is particularly difficult at a thin thickness. In addition, there is a problem that it is difficult to secure excellent step coverage at a high aspect ratio.

The present invention is to solve the problems of the prior art, it is possible to independently supply the reaction gases to form a thin film, in particular to enable the reaction gases to flow uniformly to the wafer through each supply pipe.

In addition, in the present invention, the plasma is generated outside the reaction chamber so that cleaning can be performed without separating the device inside the reaction chamber, and plasma treatment is performed before or after the thin film is grown on the wafer, thereby desired characteristics of the thin film. It is to help improve.

1 is a cross-sectional view showing an atomic layer deposition apparatus according to the present invention.

Figure 2 is a bottom perspective view showing an upper distribution plate for distributing the reaction gas in the atomic layer deposition apparatus according to the present invention.

Figure 3 is a bottom perspective view showing an intermediate distribution plate for distributing the reaction gas in the atomic layer deposition apparatus according to the present invention.

Figure 4 is a perspective view showing a reaction tube to induce the reaction gas flows over the substrate in the atomic layer deposition apparatus according to the present invention.

5 is a perspective view showing a susceptor on which a substrate is mounted in an atomic layer deposition apparatus according to the present invention.

6 is a perspective view showing a reaction tube exhaust port according to the present invention.

7 is a cross-sectional view showing a state where the susceptor is lowered in the atomic layer deposition apparatus according to the present invention.

<Description of Symbols for Main Parts of Drawings>

11 Chamber 12a, 12b Reaction gas supply line

13a, 13b, 13c ... Heater 14 ... Airtight Plate

15 ... board entrance 16 ... opening

21 Reaction tube upper distribution plate 22a, 22b ... Reaction gas passageway

23 ... Reaction gas groove 24 ... Dispenser

25. Coupling means 26 ... Lower side of reaction tube upper distribution plate

31 ... middle plate of reaction tube 32 ... inlet

33 Reaction gas distribution groove 34 Exhaust passage

35 ... Coupling means 36 ... Lower side of middle plate of reaction tube

41 Reaction tube bottom plate 42 Reaction gas flow hole

43. Reaction prevention groove 44 ... Exhaust groove

51 ... the susceptor 52 ... the bellows

53 ... wafer support hole 54 ... wafer seat

55 ... Wafer Groove 56 ... Wafer Support Rod

61 Reactor tube 62 Exhaust vent

63 ... ventilator 64 ... wafer transfer path

71 ... induction plasma device 72 ... plasma injection furnace

73. Plasma inlet 74 ... Reactor tube exhaust passage

In order to achieve the above object, in the present invention, an atomic layer deposition apparatus for depositing a thin film on a wafer by injecting a kind or multiple kinds of reaction gas, the reaction chamber; each reaction gas penetrating one side of the upper reaction chamber; A reaction tube upper distribution plate having a reaction gas distribution port at a lower surface thereof to distribute one or more kinds of reaction gases supplied through a supply pipe; uniform distribution of each reaction gas supplied by the reaction tube upper distribution plate A reaction tube intermediate distribution plate having one or more reaction gas inlets supplied with each reaction gas so as to distribute the reaction gas; one or more reactions supplying each reaction gas supplied by the reaction tube intermediate distribution plate to the upper portion of the wafer; A reaction tube lower plate having a gas flow hole and forming a predetermined space thereunder; located below the reaction tube lower plate An exhaust pipe which is connected to the lower plate of the reaction tube, the exhaust gas to the outside of the reaction chamber, a susceptor for mounting a wafer; And an induction plasma generating apparatus for cleaning the inside of the reaction chamber outside the reaction chamber and plasma processing of the wafer when the wafer is seated on the susceptor.

In the present invention, the reaction tube upper distribution plate has one or more reaction gas grooves in the long axis direction connected to the reaction gas passage, respectively, on its lower surface, wherein each reaction gas groove is one or more connected in one direction A reactive gas distribution port is provided.

The reaction gas distribution port has a diameter of 0.1 mm or more, and includes a reaction gas exhaust groove in a long axis direction for preventing mixing of each reaction gas between the respective reaction gas grooves, and on the upper portion of the upper portion of the reaction tube upper distribution plate. It is preferable to have a heater.

In the present invention, the reaction gas exhaust groove is preferably 0.1 mm or more in width and 0.1 mm or more in depth.

The reaction gas intermediate distribution plate preferably has one or more reaction gas distribution grooves connected to the reaction gas inlet at the bottom thereof to distribute the reaction gases, respectively.

The reaction gas distribution grooves may be formed in a round shape having a predetermined curvature inwardly between the portions connected to the reaction gas injection holes, and the reaction gas distribution grooves may be formed to be inclined downward from the reaction gas injection holes.

It is preferable to have a heater on the upper portion of the reaction tube upper distribution plate.

In the present invention, the reaction gas flow hole has a distance from the start of the distribution of the reaction tube middle distribution plate is 1 cm or more, it is preferably formed inclined in the susceptor direction.

In the present invention, the reactive gas flow preventing groove is provided between the respective reactive gas flow holes.

The reactive gas flow preventing groove is preferably at least 0.1 mm wide and at least 0.1 mm deep.

In the present invention, formed on one side of the reaction tube lower plate and the space between the reaction tube lower plate and the susceptor and

And a reaction tube exhaust groove for exhausting the connected reaction gas to the exhaust pipe.

In the present invention, the susceptor is provided with a lifting and lowering means capable of vertical movement.

In the present invention, the susceptor includes a plurality of wafer support holes in the wafer seating portion and wafer support rods in the wafer support hole, and the wafer support rod has an upper end thereof located below a predetermined distance from the susceptor surface. It is preferable.

When the susceptor rises, the distance between the reaction tube lower plate and the wafer seated on the susceptor is 0.1 mm or more, and when the susceptor descends, the distance between the reaction tube lower plate and the susceptor is 25 mm or more. It is preferable to provide a heater under the substrate mounting portion of the acceptor.

In the present invention, the exhaust pipe is provided with a reaction tube exhaust port communicating with the reaction tube lower plate to exhaust the reaction gas.

In the present invention, the exhaust pipe is characterized in that the wafer transfer path for distributing the wafer when the wafer is seated or separated on the susceptor is formed.

The width in the long axis direction of the reaction tube exhaust port is preferably equal to the width in the long axis direction of the reaction gas injection port for supplying the reaction gas from the reaction tube lower plate to the susceptor.

In the present invention, the reaction tube exhaust pipe is connected to the exhaust port for exhausting the reaction gas, characterized in that the exhaust groove formed on the inner surface of the exhaust pipe along the periphery of the wafer transfer port.

In the present invention, the reaction chamber is provided with a reaction tube exhaust path for exhausting the induction plasma, characterized in that it further comprises a substrate entrance and the opening and closing port for regulating the substrate entrance and exit.

Hereinafter, an embodiment of an atomic layer lamination apparatus according to the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view showing the susceptor is raised during the process of the atomic layer deposition apparatus according to the present invention.

In the atomic layer deposition apparatus according to the present invention, a wafer is placed in a reaction chamber 11 having a wafer entrance 15 through which a wafer can be transferred and an opening and closing 16 through which the wafer entrance 15 can be interrupted. There is a reaction tube configured to allow a reaction gas to grow a predetermined thin film on the wafer. Reaction gas supply pipes 12a and 12b to which respective reaction gases capable of growing a predetermined thin film can be supplied are provided at one side of the reaction chamber 11, and the reaction gas supply pipes 12a and 12b are It is connected to the reaction tube upper distribution plate 21.

A reaction tube middle distribution plate 31 is installed below the reaction tube upper distribution plate 21, and a lower surface of the reaction tube upper distribution plate 21 and an upper surface of the reaction tube middle distribution plate 31. Silver is in close contact with each other. In addition, the reaction tube lower plate 41 is located below the reaction tube middle distribution plate 31.

A susceptor 51 for seating a substrate is positioned below the reaction tube lower plate 41, and the susceptor 51 is formed with the reaction tube lower plate 41 and the metal during the process of forming a predetermined thin film on the wafer. Close contact. The susceptor 51 is provided with a bellows 52 to enable vertical movement.

In the process, at least one reaction gas capable of forming a predetermined thin film is supplied into the reaction chamber 11 through the reaction gas supply pipes 12a and 12b. Each of the supplied reaction gas is transferred to the reaction tube upper distribution plate 21, and each supply gas is distributed without being mixed with each other and transferred to the reaction tube middle distribution plate 31. The gas transferred to the reaction tube middle distribution plate 31 is transferred to the reaction tube lower plate 41 and is supplied to the upper part of the susceptor 51 on which the wafer is seated. The reaction tube upper distribution plate 21, the reaction tube middle distribution plate 31, the reaction tube lower plate 41 and the susceptor 51 are sealed to each other during the process so that the reaction gas does not leak to the outside. have.

In addition, the reaction tube lower plate 41 is connected to the reaction tube exhaust pipe 61 through an exhaust port 62. The reaction tube exhaust pipe 61 has a transport space so as not to interfere when the wafer is horizontally transferred from the wafer entrance and exit 15 of the reaction chamber 11, and an exhaust port (a 62) is formed. A vacuum pump connected to the reaction tube exhaust pipe 61 is installed outside the reaction chamber 11 to maintain the degree of vacuum inside the reaction tube according to each process during the process.

In the process, the reaction gas supplied from the reaction tube lower plate participates in the reaction in the sealed space between the reaction tube lower plate and the susceptor and exits the reaction chamber through the exhaust pipe connected to the sealed space. .

In addition, a heater 13b capable of independently controlling the temperature of the reaction tube is located above the reaction tube upper distribution plate 21. A heater 13a is also positioned on an upper portion of the reaction tube lower plate 41 in close contact with the susceptor 51, and the heater 13a is disposed in the reaction tube upper distribution plate from an upper surface of the reaction tube lower plate 41. (21) and the reaction tube middle distribution plate 31 are provided on one side not located. In addition, a heater 13c may be installed on the lower surface of the susceptor 51 on which the wafer is seated to independently adjust the temperature of the wafer.

An induction plasma apparatus 71 is attached to the reaction chamber 11, and the induction plasma apparatus 71 is for cleaning the inside of the reaction tube and plasma processing of the wafer before and after the process in the reaction tube. In addition to an external pump connected to the reaction tube exhaust pipe 61, another reaction tube exhaust port may be installed for the efficiency of the process during operation of the induction plasma apparatus 71.

Figure 2 is a bottom perspective view showing a reaction tube upper distribution plate according to the present invention.

The reaction tube upper distribution plate 21 has one or more reaction gas grooves 23 in the long axis direction connected to the reaction gas passages 12a and 12b on the lower surface thereof, respectively. 23 are provided with one or more reactive gas distribution ports 24 connected in one direction. It is preferable that the said reaction gas distribution port 24 is 0.1 mm or more in diameter.

The reaction gases supplied from the outside of the reaction chamber 11 by the reaction gas supply pipes 12a and 12b are passed through the respective reaction gas passages 22a and 22b of the reaction tube upper distribution plate 21. It is transferred to the reaction gas groove 23. Gases transferred to the reaction gas groove 23 are distributed to the distribution ports 24, and are supplied to the upper portion of the reaction tube middle distribution plate 31 positioned below the reaction tube upper distribution plate 21. The reaction gases supplied to the reaction tube upper distribution plate 21 are independently transferred even inside the reaction tube upper distribution plate 21, and are not mixed with each other even when supplied to the reaction tube middle distribution plate 31. .

Each reaction gas groove 23, the distribution port 24 and the lower surface of the reaction tube upper distribution plate 21 are in surface contact with the upper surface of the reaction tube middle distribution plate 31 to form a reaction tube. . In this case, different reaction gases may flow through the contact surface into each of the transport passages. Therefore, in order to prevent this, the flow preventing grooves 27 are formed between the respective reaction gas grooves 23 on the lower surface of the reaction tube upper distribution plate 21. The flow preventing groove 27 has a width of 0.1 mm or more and a depth of 0.1 mm or more.

Figure 3 is a bottom perspective view showing a reaction tube middle distribution plate according to the present invention.

The reaction tube middle distribution plate 31 allows the reaction gas distributed in the reaction tube upper distribution plate 21 to flow uniformly on the susceptor 51. Is provided with one or more reaction gas inlet 32 to receive each reaction gas from the reaction tube upper distribution plate 21, the lower surface of the reaction tube middle distribution plate 31, the reaction gas inlet It is provided with one or more reactive gas distribution grooves 33 which are connected to 32 to distribute the reactive gases, respectively. The reaction gas inlet 32 penetrates between the reaction gas distribution grooves 33 of the upper and lower surfaces of the reaction tube middle distribution plate 31, and the reaction gas distribution groove 33 is in the middle of the reaction tube. The lower surface of the distribution plate 31 is formed to a predetermined depth.

Here, the reaction gas distribution groove 33 may be formed in a round shape with a predetermined curvature inwards between the portions connected to the reaction gas injection holes 32, respectively. This is to allow the reaction gas supplied from the reaction gas inlet 32 to the reaction gas distribution groove 33 to flow into the reaction tube lower plate 41 without stagnation. Therefore, the reaction gas distribution groove 33 is also preferably formed to be inclined to the position supplied from the reaction gas inlet 32 to the reaction tube lower plate 41.

Figure 4 is a perspective view showing a reaction tube lower plate according to the present invention.

The reaction tube lower plate 41 is provided with one or more reaction gas flow holes 42 for supplying the reaction gas supplied from the reaction tube middle distribution plate 31 to the upper part of the susceptor 51. The reaction gas flow hole 42 is connected to the reaction gas distribution groove 33 of the reaction tube intermediate distribution plate 31. The reaction gas flow holes 42 are preferably at least 1 cm from the beginning of the distribution of the reaction tube middle distribution plate 31, that is, from the injection hole 32.

A reaction gas flow preventing groove 43 may be provided between the reaction gas flow holes 42 to prevent the respective reaction gases supplied to the reaction tube lower plate 41 from being mixed with each other. The reactive gas flow preventing groove 43 has a width of 0.1 mm or more and a depth of 0.1 mm or more. Here, the reaction gas flow holes 42 are formed to be inclined at a predetermined acute angle in the vertical direction as shown in FIG. 1.

One side of the reaction tube lower plate 41 is formed with an exhaust flaw 44 in communication with the reaction space between the reaction tube lower plate 41 and the susceptor 51 during the process. The exhaust groove 44 is a place where the reaction gases supplied to the reaction space are discharged to the outside after participating in the reaction, and the exhaust groove 44 is connected to the exhaust port 62 of the reaction tube exhaust pipe 61. The reaction gas is discharged by a vacuum pump.

5 is a perspective view showing the structure of a susceptor according to the present invention.

The susceptor 51 is provided with a lifting and lowering means capable of vertical movement, which is operated by a bellows 52 connected to the support of the susceptor. The susceptor 51 includes a plurality of wafer support holes 53 in the wafer seating portion 54 and wafer support bars 56 in the wafer support hole 53. When the susceptor 51 is raised because the upper end thereof is located below a predetermined distance from the susceptor 51 surface, the wafer support rods 56 may be formed inside the wafer support hole 53. Invisible from outside.

The susceptor 51 is brought into contact with the reaction tube lower plate 41 by metal sealing when raised so that a reaction space is formed between the reaction tube lower plate 41 and the susceptor 51 when the reaction gas is generated. It exists only in the reaction space. When the susceptor 51 is raised, the distance between the reaction tube lower plate 41 and the wafer seated on the susceptor 51 is preferably 0.1 mm or more. In addition, the susceptor 51 is lowered to replace the wafer after the process, and at this time, the distance between the reaction tube lower plate 41 and the susceptor 51 is 25 mm when the susceptor 51 is lowered. It is preferable that it is above.

The bellows 52 for raising and lowering the susceptor 51 operates in two steps. At the time of the process, the susceptor 51 is in close contact with the reaction tube lower plate 41. Here, when one step is lowered, the wafer is in contact with the wafer seating portion 54 without the wafer support rod 56 coming out of the wafer support hole 53. In this state, the induced plasma is supplied into the reaction chamber 11 and flows over the wafer of the reaction tube lower plate 41 and the susceptor 51 to perform plasma treatment on the surface of the wafer. In this step, the susceptor 51 is lowered by the bellows 52 so that the wafer support rods 56 are exposed to the outside of the wafer support hole 53. The wafer support rod 56 is fixed so as not to operate even when the susceptor 51 is lowered, and appears from the wafer support hole 53 by the lowering of the susceptor 51. At this time, the reaction tube cleaning by the induced plasma is performed.

Figure 6 is a perspective view showing the structure of the reaction tube exhaust pipe according to the present invention. An exhaust port 62 is formed at an upper portion of the reaction tube exhaust pipe 61, and when the wafer is placed or separated from the susceptor 51 through the reaction tube exhaust pipe 61, the wafer is distributed. A transfer path 64 is formed penetrating the center of the reaction tube exhaust pipe 61. The exhaust port 62 communicates with the exhaust groove 44 of the reaction tube lower plate 41, and is connected to the exhaust tube 63 in the reaction tube exhaust pipe 61 along the wafer transfer path 64. It is. Therefore, the reaction gas discharged from the reaction space is transferred to the exhaust port 62 along the exhaust groove 44 and discharged to the outside of the reaction chamber 11 through the exhaust cylinder 63.

The width of the long axis direction of the reaction tube exhaust port 62 is formed to be equal to the width of the long axis direction of the reaction gas injection port for supplying the reaction gas to the upper part of the susceptor 51 from the reaction tube lower plate 41. It is preferable to uniformly move the wafer top from the reaction gas injection port.

When the wafer is seated on the susceptor 51 or transferred to the outside, the wafer transfer robot arm enters and exits through the wafer transfer path 64.

7 is a cross-sectional view showing a structure in which the susceptor 51 of the reaction tube is lowered. Here, the susceptor 51 is lowered to show the shape in which the wafer support rods 56 appear from the wafer support holes 53.

The susceptor 51 is lowered by the bellows 52, and when the step is lowered, the susceptor 51 descends from the wafer support hole 53 to the extent that the wafer support bar 56 does not appear, in which case the wafer is lowered. Is located in the wafer seating portion 54 as it is. At this time, the gas capable of cleaning the reaction tube and the gas capable of cleaning the wafer are supplied into the reaction chamber 11 through the induction plasma injection port 73. The plasma generated inside the reaction chamber 11 passes through the wafer surface between the reaction tube lower plate 41 and the susceptor 51, and performs plasma processing on the wafer. At this time, the induced plasma is discharged to the outside through the reaction tube exhaust passage (74).

When the step falls, the width of the drop is greater than the case of the step drop so that the wafer support rod 56 is exposed from the wafer support hole 53 on the wafer. Accordingly, the wafer is separated from the wafer seating portion 54 of the susceptor 51 by the wafer support rod 56. At this time, the opening and closing hole 16 of the reaction chamber 11 is opened, and the Robert arm enters and transfers the wafer. After the transfer, the opening and closing hole 16 is closed and again, the gas capable of cleaning the reaction tube is supplied from the induction plasma injection hole 73 to generate a plasma in the reaction chamber 11, thereby cleaning the reaction tube. Is done. After the reaction tube cleaning, the plasma is discharged to the outside through the reaction tube exhaust passage 74.

According to the present invention, in the atomic layer deposition apparatus, the uniformity of the thin film to be deposited can be controlled by separating the reactant gases independently and uniformly, and excellent step coverage can be obtained at a high aspect ratio. In addition, the susceptor can be raised and lowered to clean the device without disassembling the device by externally excited plasma. Therefore, the surface of the substrate can be treated before the thin film is grown on the wafer, and the thin film can be plasma treated even after the thin film is grown, thereby improving the characteristics of the thin film.

Claims (29)

In the atomic layer deposition apparatus for depositing a thin film on a wafer by injecting one or more kinds of reaction gas, Reaction chamber; A reaction tube upper distribution plate having a reaction gas distribution port at a lower surface thereof to distribute one or more kinds of reaction gases supplied through each reaction gas supply pipe passing through one side of the upper portion of the reaction chamber; A reaction tube intermediate distribution plate having one or more reaction gas inlets supplied with each reaction gas so as to uniformly distribute the distribution of each reaction gas supplied by the reaction tube upper distribution plate; A reaction tube lower plate having one or more reaction gas flow holes for supplying each reaction gas supplied by the reaction tube middle distribution plate to the upper portion of the wafer, and forming a predetermined space thereunder; A susceptor positioned below the reaction tube lower plate to seat a wafer; An exhaust pipe connected to the reaction tube lower plate to exhaust gas out of the reaction chamber; And And an induction plasma generating device for cleaning the inside of the reaction chamber outside the reaction chamber and plasma processing of the wafer when the wafer is seated on the susceptor. The method of claim 1, The reaction tube upper distribution plate has one or more reaction gas grooves in a long axis connected to the reaction gas passage on a lower surface thereof, and each reaction gas groove includes one or more reaction gas distribution holes connected in one direction. An atomic layer deposition apparatus comprising: The method of claim 2, The reactive gas distribution port is an atomic layer deposition apparatus, characterized in that the diameter is 0.1mm or more. The method of claim 2, And a long axis flow preventing groove for preventing mixing of the respective reaction gases between the respective reaction gas grooves. The method of claim 4, wherein The flow preventing groove has a width of 0.1mm or more, depth is 0.1mm or more, characterized in that the device. delete The method of claim 6, And the reaction gas intermediate distribution plate has one or more reaction gas distribution grooves connected to the reaction gas injection holes at the bottom thereof to distribute the reaction gases, respectively. The method of claim 7, wherein And the reactive gas distribution groove is formed in a round shape having a predetermined curvature inwardly between the portions connected to the reactive gas injection holes. The method of claim 7, wherein And the reactive gas distribution groove is formed to be inclined downward from the reactive gas injection hole. The method of claim 2, The atomic layer lamination apparatus characterized by including the heater in the upper part of the reaction tube upper distribution plate. delete The method of claim 11, The reactive gas flow hole is an atomic layer deposition apparatus, characterized in that the distance from the beginning of the distribution of the reaction tube middle distribution plate is 1 cm or more. The method of claim 11, And the reactive gas flow hole is inclined toward the susceptor. The method of claim 11, And a reactive gas flow preventing groove between each reactive gas flow hole. The method of claim 14, The reactive gas flow preventing groove has a width of 0.1mm or more and a depth of 0.1mm or more. The method of claim 11, And a reaction tube exhaust groove formed on one side of the reaction tube lower plate to exhaust the reaction gas in communication with a space between the reaction tube lower plate and the susceptor to the exhaust pipe. The method of claim 11, An atomic layer stacking device comprising a heater on one side of the reaction tube lower plate. The method of claim 1, The susceptor is an atomic layer deposition apparatus, characterized in that it has a rising and lowering means capable of vertical movement. The method of claim 18, And the susceptor has several wafer support holes in the wafer seating portion and wafer support rods in the wafer support hole. The method of claim 19, And said wafer support rod has an upper end thereof located below a predetermined distance from the susceptor surface. The method of claim 18, And a distance between the reaction tube lower plate and the wafer seated on the susceptor is 0.1 mm or more when the susceptor is raised. The method of claim 18, And a distance between the reaction tube lower plate and the susceptor is 25 mm or more when the susceptor is lowered. The method of claim 18, The susceptor is an atomic layer stacking device, characterized in that provided with a heater under the substrate mounting portion. The method of claim 1, And the reaction tube exhaust pipe is provided with an exhaust port communicating with the reaction tube lower plate to exhaust the reaction gas. The method of claim 24, And the reaction tube exhaust pipe penetrates through a central portion thereof, and a wafer transfer path is formed to distribute the wafer when the wafer is seated or separated on the susceptor. The method of claim 24, And a width in the long axis direction of the exhaust port is the same as a width in the long axis direction of the reaction gas injector for supplying the reaction gas from the reaction tube lower plate to the susceptor. The method of claim 24, The exhaust port is an atomic layer deposition apparatus, characterized in that formed along the periphery of the wafer transfer path inside the surface of the exhaust pipe. The method of claim 1, And the reaction chamber includes a reaction tube exhaust port for exhausting the induced plasma. The method of claim 1, The reaction chamber has a substrate entrance and the atomic layer deposition apparatus, characterized in that provided with an opening and closing for controlling the substrate entrance and exit.